Beruflich Dokumente
Kultur Dokumente
Minority Carrier
Diffusion Equation (MCDE)
Professor Mark Lundstrom
Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
lundstro@purdue.edu
Pierret, Semiconductor Device Fundamentals (SDF)
pp. 122-132
outline
!
( )
0 = −∇i ε E + ρ
! ! ! !
J p = pqµ pE − qD p∇p = pµ p∇ Fp q ( ) (
ρ = q p − n + N D+ − N A− )
! ! ! ! ! !
J n = nqµnE + qDn∇n = nµn∇ ( Fn q ) !
E ( r ) = ∇V ( r )
n = n0 = N D (N-type semiconductor in
! low level injection)
∂p ⎛ Jp ⎞
= −∇i ⎜ ⎟ + G p − Rp (hole continuity equation)
∂t ⎝ q⎠
∂p d ⎛J ⎞
= − ⎜ px ⎟ + GL − Rp (1D, generation by light)
∂t dx ⎝ q ⎠
∂ Δp d ⎛ −qD p dΔp dx ⎞ Δp
=− ⎜ ⎟ + GL − (low-level injection, no
∂t dx ⎝ q ⎠ τp
electric field)
∂ Δp d 2 Δp Δp
= Dp − + GL (Dp spatially uniform)
∂t dx 2 τp
4
minority carrier diffusion equation
N-type semiconductor:
P-type semiconductor:
∂ Δn ( x,t ) d 2 Δn ( x,t ) Δn ( x,t )
p ( x,t ) = p0 = N A = Dn − + GL
∂t dx 2 τn
P-type Si at T = 300 K
N A = 1017 cm −3 = p0
MCDE for electrons
µn = 300 cm 2 /V-s
∂ Δn ( x,t ) d 2 Δn ( x,t ) Δn ( x,t )
= Dn − + GL
⎛k T⎞ ∂t dx 2 τn
Dn = ⎜ B ⎟ µn = 7.8 cm 2 /s
⎝ q ⎠
τ n = 10 −6 s
Δn = GL τ n
8
HW5 #1: solution
Δn ( x )
Δn ( x ) = GLτ n
Δn = GLτ n = 10 20 × 10 −6 = 1014
x
x=0
P-type / equilibrium
n2 p0 = ni e( Ei −EF ) kBT
n0 = i = 10 3 cm -3
p0
EC 1017 = 1010 e( Ei −EF ) kBT
Ei
EF EF = Ei − 0.41 eV
EV
p0 = 1017 cm -3
n ≈ Δn = ni e( Fn −Ei ) kBT
Δn = 1014 cm -3 >> n0
EC 1014 = 1010 e( Fn −Ei ) kBT
Fn
Ei
Fn = Ei + 0.24 eV
Fp
EV
p0 = 1017 cm -3
HW5 #2
∂ Δn Δn
=−
∂t τp
Δn ( 0 ) = 1014
Δn ( t )
Δn ( x ) = Δn ( 0 ) e−t /τ n
Δn = ( t → ∞ ) = 0
t
t=0
13
Δn ( t = 0 ) = GLτ n
Δn ( x )
Δn ( t ) = Δn ( t = 0 ) e−t /τ n
x
x=0
Fp = Ei − 0.41 eV
n ( t ) ≈ Δn ( t ) = ni e(
Fn ( t )−Ei ) kBT EC
Fn
Ei
1014 e−t /τ n = 1010 e(
Fn ( t )−Ei ) kBT
Fp
EV
HW5 #4
d 2 Δn Δn
− 2 =0 Ln ≡ Dnτ n
dx 2 Ln
16
HW5 #4: solution
17
Δn ( 0 ) Ln = Dnτ n << L
Δn ( x )
Δn ( x ) = Δn ( 0 ) e− x/Ln
Δn ( x → ∞ ) = 0
x
x=0 x = L = 200 µm
19
HW5 #5
∂ Δn d 2 Δn Δn
Δn ( x = 0 ) = 1012 cm -3 fixed = Dp − + GL
∂t dx 2 τ n
Δn ( x = 5 µm ) = 0
d 2 Δn Δn
0 = Dp − +0
dx 2 τ n
d 2 Δn Δn
1) Simplify the MCDE − 2 =0 Ln ≡ Dnτ n
dx 2 Ln
2) Solve the MCDE
3) Deduce Fn from Δn
20
HW5 #5: solution
Δn ( x = 0 ) = 1012 cm -3 fixed d 2 Δn ( x ) Δn ( x )
− =0 Ln ≡ Dnτ n
dx 2 L2n
Δn ( x = 5 µm ) = 0
d 2 Δn ( x )
=0
dx 2
21
Δn ( 0 ) L p = D pτ p = 28 µm >> L = 5 µm
Δn ( x )
⎛ x⎞
Δn ( x ) = Δn ( 0 ) ⎜ 1− ⎟ Δn ( x = L ) = 0
⎝ L⎠
x
x=0 x=L
∂ Δn d 2 Δn Δn
Δn ( x = 0 ) = 1012 cm -3 fixed = Dp − + GL
∂t dx 2 τ n
Δn ( x = 30 µm ) = 0
d 2 Δn Δn
0 = Dp − +0
dx 2 τ n
d 2 Δn Δn
1) Simplify the MCDE − 2 =0 Ln ≡ Dnτ n
dx 2 Ln
2) Solve the MCDE
3) Deduce Fn from Δn
Ln = 28 µm L = 30 µm
23
Δn ( x = 0 ) = 1012 cm -3 fixed d 2 Δn Δn
− 2 =0
dx 2 Ln
Δn ( x = 30 µm ) = 0
Δn ( x ) = Ae− x/Ln + Be+ x/Ln
Δn ( 0 ) = A + B = 1012
1) Simplify the MCDE
2) Solve the MCDE Δn ( L ) = Ae− L/Ln + Be+ L/Ln = 0
3) Deduce Fn from Δn
24
HW5 #6
Ln = Dnτ n ≈ L
Δn ( 0 )
sinh ⎡⎣( L − x ) / Ln ⎤⎦
Δn ( x ) Δn ( x ) = Δn ( 0 )
sinh ( L / Ln )
Δn ( x = L ) = 0
x
x=0 x=L
~HW5 #3
d 2 Δp Δp
Dn − + GL = 0 Can we guess the solution?
dx 2 τ n
Δn ( x )
Δn ( x → ∞ ) = GLτ p
(
GLτ n 1− e
−x L p
)
d 2 Δp Δp
Dn − + GL = 0
dx 2 τ n
Δn ( 0 ) = 0
x
x=0
E EC
Fn ( x )
Ei
Fp ( x )
EV
x
x=0
29