AO4423

30V P-Channel MOSFET

General Description Product Summary

The AO4423 uses advanced trench technology to provide VDS (V) = -30V
excellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V)
25V gate rating. This device is suitable for use as a load RDS(ON) < 6.2mΩ (VGS = -20V)
switch or in PWM applications. RDS(ON) < 7.2mΩ (VGS = -10V)

ESD Protected
* RoHS and Halogen-Free Compliant 100% UIS tested
100% Rg tested (note *)

SOIC-8

Top View Bottom View D

D
D
D
D

G
G
S
S S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -17
Current AF TA=70°C ID -14 A
Pulsed Drain Current B IDM -182
TA=25°C 3.1
PD W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient AF t ≤ 10s 26 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 50 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 14 24 °C/W

Rev.11.0 June 2013 www.aosmd,com

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
VDS=0V, VGS=±20V ±1 µA
IGSS Gate-Body leakage current
VDS=0V, VGS=±25V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 -2.1 -2.6 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -182 A
VGS=-20V, ID=-15A 5.1 6.2
mΩ
TJ=125°C 7.4 9
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-15A 5.9 7.2 mΩ
VGS=-6V, ID=-10A 7.5 9.5 mΩ
gFS Forward Transconductance VDS=-5V, ID=-15A 48 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.71 -1 V
IS Maximum Body-Diode Continuous Current -4.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2527 3033 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 583 pF
Crss Reverse Transfer Capacitance 397 556 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.1 4.3 6.4 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 47 57 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-15A 8 nC
Qgd Gate Drain Charge 14 nC
tD(on) Turn-On DelayTime 12 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.0Ω, 8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 54 ns
tf Turn-Off Fall Time 87 ns
trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 26.1 32 ns
Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 12.3 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Rev.11.0 June 2013 www.aosmd,com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
-4.5V
VDS=-5V
-10V -4V
40 40
-6V
125°C
30 30

-ID(A)
-ID (A)

25°C
20 -3.5V 20

10 10
VGS=-3V
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

10 1.7

1.6
Normalized On-Resistance

VGS=-20V
1.5 ID = -15A
VGS=-6V
8 VGS=-10V
Ω)

1.4
RDS(ON) (mΩ

ID = -15A
1.3
VGS=-10V 1.2
6
VGS=-6V
VGS=-20V 1.1
ID = -10A
1.0

4 0.9
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

16 -15
1.0E+01
ID=-15A -12.8
14 1.0E+00
125°C
1.0E-01
12
Ω)
RDS(ON) (mΩ

1.0E-02
-IS (A)

10
125°C
1.0E-03
8
1.0E-04
6 25°C
25°C 1.0E-05
4
1.0E-06
4 8 12 16 20
0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

Rev.11.0 June 2013 www.aosmd,com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000

VDS=-15V 3500
8 ID=-15A
3000 Ciss

Capacitance (pF)
2500
-VGS (Volts)

6
2000
4 1500
Coss
1000
2
500
Crss
0 0
0 10 20 30 40 50 0 10 20 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0
10000
TJ(Max)=150°C
RDS(ON) TA=25°C
100.0 10µs
limited 1000
100µs
Power (W)
-ID (Amps)

10.0
1ms
100
10ms
1.0
1s 0.1s
10
0.1 10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001 0.001 0.1 10 1000
0.1 1 10 100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)

-15
10
D=Ton/T -12.8 In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=75°C/W
Thermal Resistance

0.1
PD

0.01 Ton
Single Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Rev.11.0 June 2013 www.aosmd,com

 G ate C harge Test C ircuit & W aveform
V gs
Qg
- -10V
VDC
-
+ V ds Q gs Q gd
VDC
+
DUT
V gs

Ig

C harge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & W aveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev.11.0 June 2013 www.aosmd,com