MITSUBISHI IGBT MODULES

CM200DU-12NFH
HIGH POWER SWITCHING USE

CM200DU-12NFH

¡IC ................................................................... 200A

¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack

APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

TC measured point
94
7 80 ±0.25 2–φ6.5
17 23 23 MOUNTING HOLES 4
4 11
CM

C2E1 E2 C1
E2 G2
24

18
13
48

G1E1

12 13.5
3–M5NUTS
12mm deep
E2 G2

TAB #110. t=0.5

16 2.5 25 2.5 16
7.5

C2E1 E2 C1
30 –0.5

G1 E1
+1

21.2

LABEL
CIRCUIT DIAGRAM

Feb. 2009
 MITSUBISHI IGBT MODULES

CM200DU-12NFH
HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter Conditions Ratings Unit

VCES Collector-emitter voltage G-E Short 600 V
VGES Gate-emitter voltage C-E Short ±20 V
IC Operation 200 A
Collector current
ICM Pulse (Note 2) 400 A
IE (Note 1) Operation 200 A
Emitter current
IEM (Note 1) Pulse (Note 2) 400 A
PC (Note 3) Maximum collector dissipation TC = 25°C 590 W
PC’ (Note 3) Maximum collector dissipation TC’ = 25°C*4 830 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms
— Main terminals M5 screw 2.5 ~ 3.5 N•m
Mounting torque
— Mounting M6 screw 3.5 ~ 4.5 N•m
— Weight Typical value 310 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA

VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V

IGES Gate leakage current ±VGE = VGES, VCE = 0V — — 0.5 µA

Tj = 25°C — 2.0 2.7
VCE(sat) Collector-emitter saturation voltage IC = 200A, VGE = 15V V
Tj = 125°C — 1.95 —
Cies Input capacitance — — 55 nF
VCE = 10V
Coes Output capacitance — — 3.6 nF
VGE = 0V
Cres Reverse transfer capacitance — — 2.0 nF
QG Total gate charge VCC = 300V, IC = 200A, VGE = 15V — 1240 — nC
td(on) Turn-on delay time — — 250 ns
tr Turn-on rise time VCC = 300V, IC = 200A — — 150 ns
td(off) Turn-off delay time VGE = ±15V — — 500 ns
tf Turn-off fall time RG = 6.3Ω, Inductive load — — 150 ns
trr (Note 1) Reverse recovery time IE = 200A — — 150 ns
Qrr (Note 1) Reverse recovery charge — 3.5 — µC
VEC(Note 1) Emitter-collector voltage IE = 200A, VGE = 0V — — 2.6 V
Rth(j-c)Q IGBT part (1/2 module) — — 0.21 K/W
Thermal resistance*1
Rth(j-c)R FWDi part (1/2 module) — — 0.35 K/W
Rth(c-f) Contact thermal resistance Case to heat sink, Thermal compound Applied*2 (1/2 module) — 0.07 — K/W
Rth(j-c’)Q Thermal resistance Case temperature measured point is just under the chips (1/2 module) — — 0.15*3 K/W
RG External gate resistance 3.1 — 31 Ω
*1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
*4 : Case temperature (TC’) measured point is just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM200DU-12NFH
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
400 3
11 10 Tj = 25°C

SATURATION VOLTAGE VCE (sat) (V)

13 VGE = 15V
9.5
COLLECTOR CURRENT IC (A)

350 15 9 2.5

COLLECTOR-EMITTER
300 VGE =
20V
8.5 2
250
8
200 1.5

150 7.5 1
100
7 0.5 Tj = 25°C
50
Tj = 125°C
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 50 100 150 200 250 300 350 400

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
5 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 7
4.5
5
EMITTER CURRENT IE (A)

4
COLLECTOR-EMITTER

3
3.5
2
3
IC = 400A
2.5 102
IC = 200A 7
2
5
1.5 IC = 80A
3
1
2 Tj = 25°C
0.5
Tj = 125°C
0 101
6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 103
7
CAPACITANCE Cies, Coes, Cres (nF)

7
5 Cies
3 5
td(off)
SWITCHING TIME (ns)

2
3
101 2
7 td(on)
5
tf
3 102
tr
2 7
Coes Conditions:
100 5
VCC = 300V
7
5 3 VGE = ±15V
Cres
3 RG = 6.3Ω
2
2 Tj = 125°C
VGE = 0V Inductive load
10–1 –1 101 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM200DU-12NFH
HIGH POWER SWITCHING USE

TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
OF FREE-WHEEL DIODE (IGBT part )
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

103 100
REVERSE RECOVERY TIME trr (ns)

7 7

THERMAL IMPEDANCE Zth (j–c)

5 Single Pulse

NORMALIZED TRANSIENT
5
3 TC = 25°C
2
3
2 10–1 10–1
7 7
5 5
102 3 3
7 2 2
trr Conditions:
5 10–2 10–2
Irr VCC = 300V
7 7
3 VGE = ±15V 5 5
2
RG = 6.3Ω 3 3
Tj = 25°C 2
Per unit base = 2
Inductive load Rth(j–c) = 0.21K/W
101 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TIME (s)

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS GATE CHARGE
(FWDi part) CHARACTERISTICS
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 (TYPICAL)
100 20
7 IC = 200A
GATE-EMITTER VOLTAGE VGE (V)
THERMAL IMPEDANCE Zth (j–c)

5 Single Pulse
NORMALIZED TRANSIENT

3 TC = 25°C 16
2 VCC = 200V
10–1 10–1 VCC = 300V
7 7 12
5 5
3 3
2 2
8
10–2 10–2
7 7
5 5
4
3 3
2
Per unit base = 2
Rth(j–c) = 0.35K/W
10–3 10–3 0
10–5 2 3 5 710–4 2 3 5 7 10–3 0 400 800 1200 1600
200 600 1000 1400 1800
TIME (s) GATE CHARGE QG (nC)

Feb. 2009