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02
ALHigh Density Capacitive Pressure Sensor Array
For Fingerprint Sensor Application
P. REY* , P. CHARVET",
-~ M.T. DELAYE*, S. ABOUHASSAN**
* LET1 - CEA / Ch-enoble
17, rue des Martyrs - F38054 Grenoble CCdex 9 - FRANCE
** SEPT / PEM - 42, rue des Coutures - BP 6243 - 14066 CAEN
SUMMARY
SENSOR DESIGN AND MANUFACTURING
This paper reports oni the first technological and
electrical results on the sensitive part of a fingerprint sensor Figure 1 is a cross section of the pressure sensitive cell.
which consists of an X-k' array of absolute pressure Its design has been done for an average pressure of about 0.3
capacitive sensitive cells with a pitch of SOpm. bar exerted by the forefinger on the sensor during
Manufacturing is carried out using a specific CMOS identification. Its dimensions are given in the table 1.
compatible silicon surface micromachining process. Very
good cell sensitivity homogeneity has been measured at a Table I :Dimensions of apressure sensing cell
wafer level thanks to an automatic probe test. Pressure sensor
geometrical parameters and membrane material Young membrane diameter
modulus have been deduced from tests on individual cells.
Results are in good agreemeat with theory and have been
confirmed by deflexion interferometric measurements.
INTRODUCTION
TRANSDUCERS '97
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Chicago, June 16-19, 1997
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4D3.02
1
3
I I
sensitive cell.
- the high number of connexions required to read each Figure 4 :Influence of the process on the threshold voltage
cell which excludes any possibility of wire bonding.
of NMOS transistors versus their length. Dotted line :
characteristic after the process
Figure 3 shows the manufacturing macro process flow.
Process is performed on an oxidized silicon wafer. The
thermal oxyde is lpm thick (1). Then successively, bottom
electrode, sacrificial layer and upper electrode are deposited EXPERIMENTAL RESULTS
and etched after a photolithography step (2). Membrane
material, a low stress PECVD silicon nitride, is deposited (3). Electrical tests have been performed at the wafer level
Sacrificial layer is etched through the Si3N4layer (4). The so on a probe tester. This test provides an economical sorting
formed reference pressure chamber is sealed under vacuum means of functional cells. To be able to measure capacity
by a Si3N4PECVD layer (5). Finally, contacts are opened by higher than the parasitic capacity induced by the equipment,
dry etching (6). Temperature of each step of the process measurements were carried out on chips made of 10 pressure
doesn't exceed 300°C. sensing cells connected in parallel. Figure 5 shows the 3D
cartography of the sensitivity on a wafer. Dispersion is
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mainly due to deposited layer thickness variation, low Table 2 :Statistical measurements
sensitivity being located rather at the center of the wafer. of offset and sensitivity
Nevertheless, the technological homogeneity is quite good.
As it is shown in figures 6 <and7, distributions are gaussian I OfEset mean value (fF'r I 149 I
like. Mean value and mean deviation of the nominal capacity Offset mean deviation (e) 10
and of the sensitivity are summarized in the table 2. Sensitivity mean value (e) 424
Sensitivitv mean deviation (E'r 0.32
25 i
structure number
20
0 0.5 1 15
-
Applied pressure in Bar
2 2.5
-+
3 35
128/132 136/140 144/148 152/156 1601164 Figure 8 :Capacity of apressure cell versus the applied
interval of offset in fF pressure
Figure 6 :Statistical reparlition of the nominal capacity Such characterisations have allowed the equivalent
Young modulus of the PECVD silicon nitride membrane
material to be accurately determined :
25
E,, = 14.5 .1OIoPa
1 structure number
20 This value is probably not the intrinsic value of the
material although it is in good agreement with those given in
15 the litterature (14.10"Pa < E < 38.5.10"Pa). It includes some
parasitic effects inherent in the anchorages of the membrane
10 and in the metallic lines running on it . Nevertheless it is
reproducible and will be usefd for further sizing of similar
5 cells.
0
Individual pressure cells can withstand overpressure up
34/36 36138 38140 40142 42/44 44/46 46/48 48/50 50152 >52
interval of sensitivity in fF to 7 bars. No change in their characteristics have been
detected during further normal working.
Figure 7 :Statistical repartition of the sensitivity measured
on 10 sensitive cells connected in parallel
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Figure 9 shows an interferometric cartography of the CONCLUSION
membrane deflexion. After having been first metallized to
ensure a good reflexion homogeneity, the surface is scanned The feasability of a capacitive pressure sensor array for
by a laser beam. Interferences are built between the scanning fingerprint recognition has been demonstrated using a CMOS
beam and a reference fixed beam. Thus, the number of compatible surface micromachining process. Pressure cells
interference fringes is proportionnal to the altitude of the with a pitch of 50pm have been electrically and optically
reflective surface. The experiment is completly driven by a characterized. The good agreement between results issued
micro-computer and results are delivered in the form of 3D fiom the various experiments, especially for the Young
cartography of the height versus the XY position. This modulus of the membrane material, have allowed a reliable
characterisation highlights irregularities in the membrane mechanical model of the sensor to be elaborated. Next steps
deflexion due to parasitic stresses. They are induced on the will be to integrate the sensor on a CMOS circuit and to test
one hand by the metal lines running on the membrane and on the interface between the sensor and the finger.
the other hand by the peripheric plugs which hermetically
sealed the reference cavity. As it is shown in figure 10
deflexion measurements performed with this method are in
good agreement with those got by other ways and corroborate REFERENCES
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IZ0
100 i \
t - t - i
,-...
I ---ltc-+
4 6 8 10 12 14 16 18 20 22 24
membrane radius [ p m 1
+ deflexion deduced from unit cell capacity measurements
deflexion deduced from geometncal measurements with the intelferometer
. deflexion measurements with the interferometer
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