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Physics of VLSI Devices

Digital Assignment - I

1. (a) At room temperature (300 K) the effective density of states in the valence band is 2.66 x
1019 cm-3 for silicon and 7 x 1015 cm-3 for gallium arsenide. Find the corresponding effective
masses of holes. Compare these masses with the free-electron mass. (b) silicon sample at T =
300 K contains an acceptor impurity concentration of NA = 1016 cm-3. Determine the
concentration of donor impurity atoms that must be added so that the silicon is n-type and
the Fermi energy is 0.20 eV below the conduction band edge.
2. (a) Draw a simple flat energy band diagram for silicon doped with 1016 arsenic atoms/cm3 at
77 K, 300 K, and 600 K. Show the Fermi level and use the intrinsic Fermi level as the energy
reference. (b) Determine the total number of energy states in GaAs between EV and EV - kT
at T = 300 K.
3. (a) Determine the probability that an energy level is occupied by an electron if the state is
above the Fermi level by (i) kT. (ii) 5kT, and (iii) 10kT.
(b) Determine the probability that an energy level is empty of an electron if the state is
below the Fermi level by (i) kT, (ii) 5kT. and (iii) l0kT.
4. (a) Determine the probability of occupancy of a state that is located at 0.259eV above E F at:
i) Τ = OK ii) Τ = 300K iii) Τ = 600K (b) Determine the probability of vacancy of a state that is
located at 0.4eV below EF at T= 300K. (c) Repeat part (b) if the state is at 0.01 eV above EF at
T = 300K.
5. Two semiconductor materials have exactly the same properties except that material A has a
bandgap energy of 1.0 eV and material B has a bandgap energy of 1.2 eV. Determine the
ratio of ni, of material A to that of material B for T = 300 K.
6. The Fermi level in n-type silicon at T = 300 K is 245 meV below the conduction band and 200
meV below the donor level. Determine the probability of finding an electron (a) in the donor
level and (b) in a state in the conduction band kT above the conduction band edge.
7. Assume that silicon. germanium, and gallium arsenide each have dopant concentrations
of Nd = I x 1013 cm-3 and Na = 2.5 x 1013 cm-3 at T = 300 K. For each of the three materials (a) Is
this material n type or p type? (b) Calculate n, and p.
8. A sample of silicon at T = 450 K is doped with boron at a concentration of 1.5 x 1015 cm-3 and
with arsenic at a concentration of 8 x 1014 cm-3. (a) Is the material n or p type? (b) Determine
the electron and hole concentrations. (c) Calculate the total ionized impurity concentration.
9. Silicon at T = 300 K is doped with acceptor atoms at a concentration of Na = 7 x 1015 cm-3. (a)
Determine EF – EV. (h) Calculate the concentration of additional acceptor atoms that must be
added to move the Fermi level a distance kT closer to the valence-band edge.
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Q1. 18MVD0078 LOKARE AJAY VISHWANATH

Q2. 19MVD0013 RAVINDER KUMAR

Q3. 19MVD0018 AISHWARYA RAI

Q4. 19MVD0030 YEDDULA PAVANI VYSHNAVI

Q5. 19MVD0042 PATIL SHIVDATT MIRAJ

Q6. 19MVD0044 MEBIN P M

Q7. 19MVD0048 SARGAR ROHAN SUKHADEO

Q8. 19MVD0071 KANAK SIMON KUJUR

Q9. 19MVD0105 M BIRABHADRA