TGA2222

®
32 – 38 GHz 10 Watt GaN Amplifier

Product Overview
Qorvo’s TGA2222 is a wide band power amplifier MMIC
fabricated on Qorvo’s production 0.15 um GaN on SiC
process (QGaN15). Covering 32 – 38 GHz, the TGA2222
provides 40 dBm (10 W) of saturated output power and 16
dB of large-signal gain while achieving > 22% power-added
efficiency.

The TGA2222 employs a balanced architecture to minimize

performance sensitivity to load variation. Its RF ports are
DC coupled to ground for optimum ESD performance. The
TGA2222 has DC blocking capacitors on both RF ports,
which are matched to 50 ohms. Key Features
The TGA2222 can support a wide range of operating • Frequency Range: 32 – 38 GHz
conditions, including CW operation, making it well-suited for • PSAT (PIN=24 dBm): > 40 dBm
both commercial and military systems. • PAE (PIN=24 dBm): > 22 %
• Power Gain (PIN=24 dBm): > 16 dB
Lead-free and RoHS compliant.
• Small Signal Gain: > 25 dB
• Bias (pulsed): VD = 26 V, IDQ = 640 mA
• Bias (CW): VD = 24 V, IDQ = 640 mA
• Die Dimensions: 3.43 x 2.65 x 0.05 mm

Performance is typical across frequency. Please

reference electrical specification table and data plots for
more details.

Functional Block Diagram

Applications
• Communications
• Radar
2 3 4 5 6
• Satcom
• EW
• Space communications
• Point to point communications

RF IN 1 7 RF OUT

Ordering Information
12 11 10 9 8

Part No. Description

32  – 38 GHz 10 W GaN Amplifier
TGA2222
(10 Pcs.)
TGA2222DS2 Samples (2 pcs.)
TGA2222EVB1 Evaluation Board for TGA2222

Data Sheet Rev. C, July 2019 | Subject to change without notice 1 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Value / Range Parameter Value / Range
Drain Voltage (VD) 29.5 V Drain Voltage (VD, Pulsed) 26 V
Gate Voltage Range (VG) -4 V to 0 V Drain Voltage (VD, CW) 24 V
Drain Current (ID1/ID2/ID3) (T=85 °C) 1.06 / 1.70 / 3.44 A Drain Current (IDQ) 640 mA
Gate Current (IG) See plot pg. 15 Operating Temperature −40 to +85 °C
Power Dissipation (PDISS), 85 °C 60 W Electrical specifications are measured at specified test
Input Power (PIN), 50 Ω, CW, conditions. Specifications are not guaranteed over all
30 dBm recommended operating conditions.
VD=24 V, IDQ=640 mA, 85 °C
Input Power (PIN), 3:1 VSWR, CW,
30 dBm
VD=26 V, IDQ=640 mA, 85 °C
Soldering Temperature (30 seconds,
320 °C
maximum)
Storage Temperature -55 to +125 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.

Data Sheet Rev. C, July 2019 | Subject to change without notice 2 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Electrical Specifications (Pulsed)

Parameter Min Typ Max Units
Operational Frequency 32 38 GHz
Output Power (PIN = 24 dBm) 32 GHz 40.2 dBm
(Pulsed, VD = 26 V) 35 GHz 41.1 dBm
38 GHz 40.8 dBm
Power Added Efficiency (PIN = 24 dBm) 32 GHz 17.7 %
(Pulsed, VD = 26 V) 35 GHz 19.3 %
38 GHz 20.3 %
Small Signal Gain (CW, VD = 26 V) 32 GHz 28.3 dB
35 GHz 24.4 dB
38 GHz 21.6 dB
Input Return Loss (CW, VD = 26 V) 32 GHz 21 dB
35 GHz 23 dB
38 GHz 17 dB
Output Return Loss (CW, VD = 26 V) 32 GHz 16 dB
35 GHz 38 dB
38 GHz 18 dB
Output Power Temp. Coeff. (85 °C to 25 °C, VD = 26 V
−0.010 dB/°C
(pulsed), PIN = 24 dBm)
Sm. Sig. Gain Temp. Coefficient (85 °C to  −40 °C, CW,
−0.086 dB/°C
VD = 26 V)
Test conditions, unless otherwise noted: T = 25 °C, VD = 26 V, IDQ = 640 mA, PW = 100 us, Duty Cycle = 10%

Electrical Specifications (CW)

Parameter Min Typ Max Units
Operational Frequency 32 38 GHz
Output Power (PIN = 24 dBm) 32 GHz 40.4 dBm
(CW, VD = 24 V) 35 GHz 41.0 dBm
38 GHz 40.2 dBm
Power Added Efficiency (PIN = 24 dBm) 32 GHz 22.3 %
(CW, VD = 24 V) 35 GHz 23.2 %
38 GHz 22.6 %
Small Signal Gain (VD = 24 V) 32 GHz 29.5 dB
35 GHz 25.6 dB
38 GHz 22.1 dB
Input Return Loss (VD = 24 V) 32 GHz 21 dB
35 GHz 32 dB
38 GHz 16 dB
Output Return Loss (VD = 24 V) 32 GHz 16 dB
35 GHz 30 dB
38 GHz 18 dB
Output Power Temp. Coeff. (85 °C to 25 °C, VD = 24 V
−0.030 dB/°C
(CW), PIN = 24 dBm)
Sm. Sig. Gain Temp. Coefficient (85 °C to  −40 °C, VD =
−0.086 dB/°C
24 V)
Test conditions, unless otherwise noted: T = 25 °C, VD = 24 V, IDQ = 640 mA

Data Sheet Rev. C, July 2019 | Subject to change without notice 3 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: VD=26 V, IDQ=640 mA, T=+25 °C, PIN=24 dBm, PW=100 us, Duty Cycle=10%

Output Power vs. Freq. vs. Temp. PAE vs. Freq. vs. Temp.
42 30
41

Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33
-40 C +25 C +85 C -40 C +25 C +85 C
32 0
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Drain Current vs. Freq. vs. Temp. Gate Current vs. Freq. vs. Temp.
3000 0.10
0.08
2500
0.06
Gate Current (mA)
Drain Current (mA)

0.04
2000
0.02
1500 0.00
-0.02
1000
-0.04
-0.06
500
-40 C +25 C +85 C -0.08
-40 C +25 C +85 C
0 -0.10
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Output Power vs. Freq. vs. Vdrain PAE vs. Freq. vs. Vdrain
42 30
41
Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33 20 V 22 V 24 V 26 V
20 V 22 V 24 V 26 V
32 0
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, July 2019 | Subject to change without notice 4 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: VD=26 V, IDQ=640 mA, T=+25 °C, PIN=24 dBm, PW=100 us, Duty Cycle=10%

Drain Current vs. Freq. vs. Vdrain Gate Current vs. Freq. vs. Vdrain
3000 0.10
0.08
2500 20 V 22 V 24 V 26 V
0.06
Drain Current (mA)

Gate Current (mA)

0.04
2000
0.02
1500 0.00
-0.02
1000
-0.04
-0.06
500
20 V 22 V 24 V 26 V -0.08
0 -0.10
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Output Power vs. Freq. vs. IDQ PAE vs. Freq. vs. IDQ
42 30
41
Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33 400 mA 640 mA 800 mA
400 mA 640 mA 800 mA
32 0
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Drain Current vs. Freq. vs. IDQ Gate Current vs. Freq. vs. IDQ
3000 0.10
0.08
2500
0.06
Gate Current (mA)
Drain Current (mA)

0.04
2000
0.02
1500 0.00
-0.02
1000
-0.04
-0.06
500
400 mA 640 mA 800 mA -0.08
400 mA 640 mA 800 mA
0 -0.10
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, July 2019 | Subject to change without notice 5 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: VD=26 V, IDQ=640 mA, T=+25 °C, PW=100 us, Duty Cycle=10%

Output Power vs. PIN vs. Freq. PAE vs. PIN vs. Freq.
42 30

Power Added Efficiency (%)

41
25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33 32 GHz 35 GHz 38 GHz
32 GHz 35 GHz 38 GHz
32 0
7 9 11 13 15 17 19 21 23 25 27 7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm) Input Power (dBm)

Power Gain vs. PIN vs. Freq. AM-PM vs. PIN vs. Freq.
28 30
26
25
24
Power Gain (dB)

AM-PM (degree/dB)

22 20
20
15
18
16 10
14
5
12
32 GHz 35 GHz 38 GHz 32 GHz 35 GHz 38 GHz
10 0
7 9 11 13 15 17 19 21 23 25 27 7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm) Input Power (dBm)

Drain Current vs. PIN vs. Freq. Gate Current vs. PIN vs. Freq.
3000 0.10
0.08
2500
0.06
Gate Current (mA)
Drain Current (mA)

0.04
2000
0.02
1500 0.00
-0.02
1000
-0.04
-0.06
500
-0.08
32 GHz 35 GHz 38 GHz 32 GHz 35 GHz 38 GHz
0 -0.10
7 9 11 13 15 17 19 21 23 25 27 7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, July 2019 | Subject to change without notice 6 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: VD=26 V, IDQ=640 mA, T=+25 °C, PW=100 us, Duty Cycle=10%, Freq.=35 GHz

Output Power vs. Input Power vs. Temp. Output Power vs. Input Power vs. Vdrain
42 42
41 41
40
40
Output Power (dBm)

Output Power (dBm)

39
39
38
37 38
36 37
35 36
34
35
33
34
32
31 33
-40 C +25 C +85 C 20V 22V 24V 26V
30 32
7 9 11 13 15 17 19 21 23 25 27 7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm) Input Power (dBm)

PAE vs. Input Power vs. Temp. PAE vs. Input Power vs. Vdrain
30 30
Power Added Efficiency (%)
Power Added Efficiency (%)

25 25

20 20

15 15

10 10

5 5
-40 C +25 C +85 C 20V 22V 24V 26V
0 0
7 9 11 13 15 17 19 21 23 25 27 7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. Temp. Drain Current vs. Input Power vs. Vdrain
3000 3000

2500 2500
Drain Current (mA)

Drain Current (mA)

2000 2000

1500 1500

1000 1000

500 500
-40 C +25 C +85 C 20V 22V 24V 26V
0 0
7 9 11 13 15 17 19 21 23 25 27 7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, July 2019 | Subject to change without notice 7 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (Pulsed)

Test conditions, unless otherwise noted: VD=26 V, IDQ=640 mA, T=+25 °C, PW=100 us, Duty Cycle=10%, Freq.=35 GHz

Output Power vs. Input Power vs. IDQ PAE vs. Input Power vs. IDQ
42 30
41

Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33
400mA 640mA 800mA 400mA 640mA 800mA
32 0
7 9 11 13 15 17 19 21 23 25 27 7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. IDQ

3000

2500
Drain Current (mA)

2000

1500

1000

500
400mA 640mA 800mA
0
7 9 11 13 15 17 19 21 23 25 27
Input Power (dBm)

Data Sheet Rev. C, July 2019 | Subject to change without notice 8 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: VD=24 V, IDQ=640 mA, T=+25 °C, PIN=24 dBm

Output Power vs. Freq. vs. Temp. PAE vs. Freq. vs. Temp.
42 30
41

Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33
-40 C +25 C +85 C -40 C +25 C +85 C
32 0
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Drain Current vs. Freq. vs. Temp. Gate Current vs. Freq. vs. Temp.
3000 0.5
0.4
2500
0.3
Gate Current (mA)
Drain Current (mA)

0.2
2000
0.1
1500 0
-0.1
1000
-0.2
-0.3
500
-40 C +25 C +85 C -0.4
-40 C +25 C +85 C
0 -0.5
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Output Power vs. Freq. vs. Vdrain PAE vs. Freq. vs. Vdrain
42 30
41
Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33 20 V 22 V 24 V 26 V
20 V 22 V 24 V 26 V
32 0
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, July 2019 | Subject to change without notice 9 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: VD=24 V, IDQ=640 mA, T=+25 °C, PIN=24 dBm

Drain Current vs. Freq. vs. Vdrain Gate Current vs. Freq. vs. Vdrain
3000 0.5
0.4
2500 20 V 22 V 24 V 26 V
0.3
Drain Current (mA)

Gate Current (mA)

0.2
2000
0.1
1500 0
-0.1
1000
-0.2
-0.3
500
20 V 22 V 24 V 26 V -0.4
0 -0.5
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Output Power vs. Freq. vs. IDQ PAE vs. Freq. vs. IDQ
42 30
41
Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33 400 mA 640 mA 800 mA 400 mA 640 mA 800 mA
32 0
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Drain Current vs. Freq. vs. IDQ Gate Current vs. Freq. vs. IDQ
3000 0.5
0.4
2500
0.3
Gate Current (mA)
Drain Current (mA)

0.2
2000
0.1
1500 0
-0.1
1000
-0.2
-0.3
500
400 mA 640 mA 800 mA -0.4
400 mA 640 mA 800 mA
0 -0.5
31 32 33 34 35 36 37 38 39 31 32 33 34 35 36 37 38 39
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, July 2019 | Subject to change without notice 10 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: VD=24 V, IDQ=640 mA, T=+25 °C

Output Power vs. PIN vs. Freq. PAE vs. PIN vs. Freq.
42 30

Power Added Efficiency (%)

41
25
40
Output Power (dBm)

39 20
38
37 15

36
10
35
34 5
33 32 GHz 35 GHz 38 GHz
32 GHz 35 GHz 38 GHz
32 0
10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Power Gain vs. PIN vs. Freq. AM-PM vs. PIN vs. Freq.
28 25
26
24 20
Power Gain (dB)

AM-PM (degree/dB)

22
15
20
18
10
16
14 5
12
32 GHz 35 GHz 38 GHz 32 GHz 35 GHz 38 GHz
10 0
10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. PIN vs. Freq. Gate Current vs. PIN vs. Freq.
3000 0.5
0.4
2500
0.3
Gate Current (mA)
Drain Current (mA)

0.2
2000
0.1
1500 0
-0.1
1000
-0.2
-0.3
500
-0.4
32 GHz 35 GHz 38 GHz 32 GHz 35 GHz 38 GHz
0 -0.5
10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, July 2019 | Subject to change without notice 11 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: VD=24 V, IDQ=640 mA, T=+25 °C, Freq. = 35 GHz

Output Power vs. Input Power vs. Temp. Output Power vs. Input Power vs. Vdrain
42 42
41 41
40 40
Output Power (dBm)

Output Power (dBm)

39 39
38 38
37 37
36 36
35 35
34 34
33 33
-40 C +25 C +85 C 20V 22V 24V 26V
32 32
10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

PAE vs. Input Power vs. Temp. PAE vs. Input Power vs. Vdrain
30 30
Power Added Efficiency (%)

Power Added Efficiency (%)

25 25

20 20

15 15

10 10

5 5
-40 C +25 C +85 C 20V 22V 24V 26V
0 0
10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. Temp. Drain Current vs. Input Power vs. Vdrain
3000 3000

2500 2500
Drain Current (mA)

Drain Current (mA)

2000 2000

1500 1500

1000 1000

500 500
-40 C +25 C +85 C 20V 22V 24V 26V
0 0
10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. C, July 2019 | Subject to change without notice 12 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Large Signal (CW)

Test conditions, unless otherwise noted: VD=24 V, IDQ=640 mA, T=+25 °C, Freq. = 35 GHz

Output Power vs. Input Power vs. IDQ PAE vs. Input Power vs. IDQ
42 30
41

Power Added Efficiency (%)

25
40
Output Power (dBm)

39
20
38
37 15
36
10
35
34
5
33
400mA 640mA 800mA 400mA 640mA 800mA
32 0
10 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. IDQ

3000

2500
Drain Current (mA)

2000

1500

1000

500
400mA 640mA 800mA
0
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)

Data Sheet Rev. C, July 2019 | Subject to change without notice 13 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Small Signal

Test conditions, unless otherwise noted: VD=24 V, IDQ=640 mA, T=+25 °C

Gain vs. Freq. vs. Temp. Gain vs. Frequency vs. VD

40 40

35 35

30 30

25 25
S21 (dB)

S21 (dB)
20 20

15 15

10 10

5 5
-40 C +25 C +85 C 20V 22V 24V 26V
0 0
30 31 32 33 34 35 36 37 38 39 40 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz) Frequency (GHz)

Input RL vs. Freq. vs. Temp. Input RL vs. Frequency vs. VD

0 0
-40 C +25 C +85 C 20V 22V 24V 26V
-5 -5

-10 -10
S11 (dB)

S11 (dB)

-15 -15

-20 -20

-25 -25

-30 -30
30 31 32 33 34 35 36 37 38 39 40 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz) Frequency (GHz)

Output RL vs. Freq. vs. Temp. Output RL vs. Frequency vs. VD

0 0
-40 C +25 C +85 C 20V 22V 24V 26V
-5 -5

-10 -10
S22 (dB)

S22 (dB)

-15 -15

-20 -20

-25 -25

-30 -30
30 31 32 33 34 35 36 37 38 39 40 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. C, July 2019 | Subject to change without notice 14 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Performance Plots – Small SIgnal

Test conditions, unless otherwise noted: VD=24 V, IDQ=640 mA, T=+25 °C

Gain vs. Freq. vs. IDQ Input RL vs. Freq. vs. IDQ
40 0
400mA 640mA 800mA
35
-5
30
-10
25
S21 (dB)

S11 (dB)
20 -15

15
-20
10
-25
5
400mA 640mA 800mA
0 -30
30 31 32 33 34 35 36 37 38 39 40 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz) Frequency (GHz)

Output RL vs. Freq. vs. IDQ

0
400mA 640mA 800mA
-5

-10
S22 (dB)

-15

-20

-25

-30
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)

Data Sheet Rev. C, July 2019 | Subject to change without notice 15 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1)
Tbase = 85 °C, VD = 26 V, IDQ = 640 mA, PDISS = 16.64 W, 2.584 ºC/W
Channel Temperature, TCH (2) No RF (quiescent DC operation) 128 °C

Thermal Resistance (θJC) (1) Tbase = 85 °C, VD = 26 V, IDQ = 640 mA, Freq = 34.0 GHz, 2.077 ºC/W
ID_Drive = 2.374 A, PIN = 24 dBm, POUT = 40.7 dBm,
Channel Temperature, TCH (Under RF) (2) PDISS = 50.07 W (Pulsed; 100us/10%) 189 °C

Thermal Resistance (θJC) (1) Tbase = 85 °C, VD = 24 V, IDQ = 640 mA, Freq = 34.0 GHz, 2.876 ºC/W
ID_Drive = 1.899 A, PIN = 24 dBm, POUT = 39.5 dBm,
Channel Temperature, TCH (Under RF) (2) PDISS = 36.86 W (CW) 191 °C
Notes:
1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 °C)
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Dissipated Power and Maximum Gate Current

Dissipated Power vs. Freq. vs. Vdrain TGA2222 Ig_max vs. TCH
60 160

140
Maximum Gate Current (mA)

50
Dissipated Power (W)

120
40
100 Stage 1
Stage 2
30 80
Stage 3
60 Total Ig
20
40
10
20
24V 85C 24dBm CW 26V 85C 24dBm PLS
0 0
31 32 33 34 35 36 37 38 39 110 120 130 140 150 160 170 180
Frequency (GHz) Channel Temperature ( C)

Test conditions, unless otherwise noted: IDQ = 640 mA, T = +85 °C, Pin = 24 dBm

Data Sheet Rev. C, July 2019 | Subject to change without notice 16 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Applications Information
C1 C2
10 uF .01 uF C3 C4
10 uF .01 uF C18 C6 C5
R1 R2 SLC .01 uF 10 uF
0W 0W C19
R3 R4
SLC
0W 0W R5 R5
VG 0W 0W
VD

2 3 4 5 6
C17
SLC

RF IN 1 7 RF OUT

C20
12 11 10 9 8
SLC

R13 R14
R12 R11
0W 0W
R10 R9 0W 0W C22
0W 0W C12 C11 C21 SLC C13 C14
SLC .01 uF 10 uF
C10 C9 10 uF .01 uF
10 uF .01 uF SLC = 100pF//10000pF

Note: VG and VD must be biased from both sides.

Remove C5 and C14 for pulsed operation.

Bias-Up Procedure Bias-Down Procedure

1. Set ID limit to 2700 mA, IG limit to 5 mA 1. Turn off RF signal
2. Set VG to −4.0 V 2. Reduce VG to −4.0 V. Ensure IDQ ~ 0 mA
3. Set VD +26 V (pulsed) or +24 V (CW) 4. Set VD to 0 V
4. Adjust VG more positive until IDQ  640 mA 5. Turn off VD supply
5. Apply RF signal 6. Turn off VG supply

Data Sheet Rev. C, July 2019 | Subject to change without notice 17 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Evaluation Board (EVB) Layout Assembly

VG12

GND
GND

GND
VG3

VD
NC
R3 R5
C4 C5
C3
R1
R4
C1 C6
R2 R6 C17 C18 C19
C2

C9 R13 C20 C21 C22

R9 C13
C10
R11
R10 Die Bonding Detail
C12 C14
C11 R14
R12
GND
GND

VD

GND
VG12
VG3

NC

PCB is made from Rogers RO6202 dielectric, .005 inch thick, 0.5 oz. copper both sides.

Bill of Materials
Reference Des. Value Description Manuf. Part Number
C1,C3,C5,C10,C12,C14 10 uF CAP, 10uF, 20%, 50V, 20%, X5R, 1206 Various

C2,C4,C6,C9,C11,C13 0.01 uF CAP, 0.01uF, 10%, 50V, X7R, 0402 Various

10K// CAP, 10K//100pF, ±20%, 50V, X7R, Presidio
C17,C18,C19,C20,C21,C22 MVB3030X103M2H5C1F
100pF 30X30,SL Components
R1,R2,R4,R6,R9,R10,R11,R13 0Ω RES, 0 OHM, JMPR, 0402 Various

R3,R5,R12,R14 0Ω RES, 0 OHM, 1/10 W, 0603 Various

Southwest
J1, J2 2.4 mm CONNECTOR, FEMALE, ENDLAUNCH 1492-04A-5
Microwave

Data Sheet Rev. C, July 2019 | Subject to change without notice 18 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Mechanical Information
2.650
2.543
2 3 4 5 6

1.325 1 7

12 11 10 9 8
0.107
0.000
0.000

1.604
0.648

0.921
1.103

2.535

3.320
3.430
0.110

Dimensions are in mm
Thickness: 0.050
Die x, y size tolerance: ± 0.050
Ground is backside of die

Bond Pad Description

Pad No. Symbol Size (um x um) Description
1 RF IN 90 x 208 RF input. 50 Ohms. DC shorted to ground.
2, 12 VG12 83 x 83 Gate voltage, stages 1 - 2. Bypass network required; refer to page 16.
3, 11 VG3 83 x 83 Gate voltage, stage 3. Bypass network required; refer to page 16.
4, 10 VD1 83 x 83 Drain voltage, stage 1. Bypass network required; refer to page 16.
5, 9 VD2 150 x 83 Drain voltage, stage 2. Bypass network required; refer to page 16.
6, 8 VD3 265 x 84 Drain voltage, stage 3. Bypass network required; refer to page 16.
7 RF OUT 90 x 208 RF output. 50 Ohms. DC shorted to ground.

Data Sheet Rev. C, July 2019 | Subject to change without notice 19 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300 °C for 30 seconds, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.

Data Sheet Rev. C, July 2019 | Subject to change without notice 20 of 21 www.qorvo.com
 TGA2222
®
32  – 38 GHz 10 Watt GaN Amplifier

Handling Precautions
Parameter Rating Standard Caution!
ESD – Human Body Model (HBM) 1A ANSI/ESD/JEDEC JS-001 ESD-Sensitive Device

Solderability
Use only AuSn (80/20) solder, and limit exposure to temperatures above 300 °C to 30 seconds, maximum.

RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev. C, July 2019 | Subject to change without notice 21 of 21 www.qorvo.com
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Qorvo:
TGA2222EVB1 TGA2222