2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Voltage Range 60 Volts

UPM Current 200 mAmp
Features
* N-channel enhancement mode field effect transistor,de-
signed for high speed pulse amplifier and drive applica-
tion,which is manufactured by the N-channel DMOS pr-
ocess.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above

Mechanical Data
High density cell design for low RDS(ON)
Voltage controlled small signal switching.
Rugged and reliabale.
High saturation current capability.
High-speed switching.CMOS logic compatible.
CMOS logic compatible input.
Not thermal runaway.
No secondary breakdown.
Marking Code: S72

Maximum Ratings and Electrical Characteristics

P Value UNIT

Drain-Source Voltage VDSS 60 V

Drain-gate Voltage VDRG 60 V

Gate-Source Voltage VGSS

Maximum Drain Current-Continue 200
ID mA
-Pulse (Note1) 800
Maximum power Dissipation Derating Above 25°C PD 350 mW

Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C

Thermal Risistance,Junction-to-Ambient RθJA 357 °C /W

NOTES:
1.Pulse Test: Pulse Width <300 us, Duty Cycle <2.0%.

Http://www.upm.com.tw E -mail:upm.tw@msa.hinet.net
 2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Voltage Range 60 Volts

UPM Current 200 mAmp
P CONDITION MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 μA ─ V
VDS=60V, VGS=0V, TJ=25 °C 1.0 μA
Zero Gate Voltage Drain Current IDSS
VDS=60V, VGS=0V, TJ=125°C
─ ─ 0.5 mA
Gate-Body Leakage, Forward IGSSF VDS=0, VGS=20V ─ ─
Gate-Body Leakage, Reverse IGSSR VDS=0, VGS=-20V ─ ─
ON CHARACTERISTIC(note1)
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 2.5 V

Static Drain-Source On-Resisitance RDS(ON) VGS=10V, ID=500mA, TJ=25 °C ─ 3. 5 Ω

VGS=10V, ID=500mA 3.75
Drain-Source On-Voltage VDS(ON)
VGS=5.0V, ID=50mA
─ ─ 1.5
V

On-State Drain Current ID(ON) VGS , VDS ＞ 2VDS(ON) 500 ─ ─ mA

Forward Transconductance GFS VDS ＞ 2VDS(ON), ID=200mA 80 ─ ─ mS

DYNAMIC CHARACTERISTICS
Input Capacitance CISS ─ ─
Output Capacitance COSS VDS=25V, VGS=0V, F=1.0MHz ─ ─
Reverse Transfer Capacitance CRSS ─ ─
Turn-On Time TON
VDD=30V,RL=25Ω , ID=500mA ─ ─
VGS=10V, RGEN=25Ω
Turn-Off Time TOFF ─ ─

Http://www.upm.com.tw E -mail:upm.tw@msa.hinet.net
 2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Voltage Range 60 Volts

UPM Current 200 mAmp

2.0 1.0
•-
V
1.8 TA =25 °C DS =10V
• °C
25
ID ,DRAIN CURRENT (AMPS)

ID ,DRAIN CURRENT (AMPS)

••• °C
-55
1.6 VGS=10V -•
0.8
• • °C
125
1.4 9V
•
1.2 8V 0.6
-•
1.0
7V
0.8 0.4
-•
0.6 6V

0.4 5V -
0.2
0.2 4V
3V
0 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
V V
DS ,DRAIN SOURCE VOLTAGE (VOLTS) GS ,GATE SOURCE VOLTAGE (VOLTS)

Fig.1 Ohmic Region Fig.2 Transfer Characteristics

DS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE

GS(th) ,THRESHOLD VOLTAGE (NORMALIZED)

2.4 1.2

2.2 V
1.15
•
V V
GS =10V DS = GS
2.0 1.1
ID• -=200mA
• ID =1.0mA
1.8 -
1.10
1.6 1.0
(NORMALIZED)

1.4 0.95
1.2 0.9•
1.0 0.85
0.8 0.8•
0.6 0.75
0.4 0.7•
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
r

T,TEMPERAURE(°C ) T,TEMPERAURE(°C )
Fig.3 Temperature versus Static Fig.4 Drain¡VSource On¡VResistance
Drain-Source On-Resistance Temperature versus Gate Threshold Voltage

Http://www.upm.com.tw E -mail:upm.tw@msa.hinet.net
www.s-manuals.com