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セ@ ZaNゥ^Lセ[イQャッエᄋRPjB。@
09475
IA-DMHH-N-FUA I
ELECTRONICS AND TELECOMMUNICATION
ENGINEERING
Paper!
{CONVENTIONAL).
Time Allowed : Three Hours Maximum Marks : 200
INSTRUCTIONS
Please read each of the following instructions· carefully
before aUempting questions :
Candidates should attempt FNE questions in all.
Question no. 1 is compulsory.
Out of the remaining SIX questions attempt any FOUR questions.
All questions. carry equal marks. The number of marks carried by
a part of a question is indicated against it.
Answers must be written in ENGLISH only.
Assume suitable data, if necessary, and indicate the same clearly.
Unless otherwise mentioned, symbols and notations have their
usual standard meanings.
Values of the following constants may be used as indicated;
wherever necessary :
Electronic charge=- 1·6 x 10-19 coulomb
Free space permeability = 47t x 10-7 Henry/m
Free space permittivity= (1/367t) x 10-9 Farad/m
Velocity oflight in free space= 3 x 108 m/s
Boltzmann constant = 1·38 X 10-23 J/K
Planck constant = 6·626 x 10--34 J-s
Neat sketches may be drawn, wherever required.
All parts and sub-parts of a question are to be attempted together
in the answer book.
Attempts of questions shall be counted in chronological order.
Unless struck off, attempt of a question shall be counted even if
attempted partly.
Any page or portion of the page left blank in the answer book
must be clearly struck off.

A-DMHH-N-FUA 1 [Contd.]

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1. Answer all of the following :

(a) Clearly distinguish between the following : 5


(i) Conductivity and Mobility
(ii) Zener breakdown and Avalanche
breakdown
(iii) Piezoelectric and Ceramic
(iv) Direct band-gap and Indirect band-gap
(v) Polarizability and Permittivity

(b) The n-channel MOSFET in the circuit has


2
VTN = 1 V and K= 0·8 mA/V •
セᄋ@

Vnn=9V

Rn=2K

(i) Assume that FET. is operating in its


saturation region. Show that In !::!!. 1 rnA.
(ii) Determine the transconducta nce gm.
(iii) If Vi = 10 mV, what are drain current and
voltages? 5

A-DMHH-N-FU A 2 [Contd.)

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(c) · Prove that for an alloy p - n junction (with
NA « Nnl. the width of the depletion layer is
given by,
1

. (2•Jl v. J2
W= P J
. cr
p

where vj is the junction potential under the.


condition of applied diode voltage. 5
(d) What is a positive real function as applied to
driving point immittance functions ? ·
Realize the following driving point impedance
function using Foster-I form :
Z(s) = 6(s + 3) (s + 9) 5
s(s + 6)

(e) For an LTI system with unit impulse response


h(t) = e-2t u(t), determine the output for an
input of 'x(t) = e-t u(t). 5
(f) Draw sample and hold circuit and explain its
operation. 5
(g) For a transmission line, the primary constants
are:
R= 0·5 0/m •

L = 0·02 JlH/m
C = lOOpF/m
G=O·Ol U/m
Compute the values of complex propagation
constant. 5
(h) What is a strain gauge ? Where does it find
applications ? How is temperature
compensation done in such gauges ? 5

A-DMHH-N-FUA 3 [Contd.]

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2. (a) · The following data is obtained for a nickel-iron
alloy during the generation of steady-state
ferromagnetic hysteresis loop :

H(A/m) 50 25 0 -10 -15 -20 -25 -50


'
B(Wb/m 2) 0·95 0·94 0·92 0·90 0·75 -0·55 -0·87 -0·95

(i) What is remanent induction ?


(ii) What is coercive field ?
(iii) Determine the saturation induction.
(iv) Determine the saturation magnetization.
(v) Identify these parameters on the graph. 10

(b) (i) Why do we classify Magnesium and "


Aluminium as good electrical conductors
even though outer 3s energy bands are
filled?
(ii) How do you explain for poor conductivity
of pure diamond with the help of energy
band model? 10

(c) In an electronic watch, the quartz crystals are


1 rom thick. They are excited piezoelectrically
in their fundamental mode.
(i) Estimate the frequency at which they
oscillate.
(ii) Estimate its daily drift (sec/day) in winter
if there is no compensation for changes in
the quartz. Do you think that the watch
does have such compensation ?
B = 1012 erg/cm3 and p = 2·7 glcm3. 10

A-DMHH-N-FUA 4 (Contd.)

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(d) A steady-state magnetic field of 10 Aim is
incident on an iron air boundary as shown in
figure. (IJ.r; 8000)

a
air
l!r; 8000

H;

(i) Write the boundary conditions for the


• magnetic field in terms of the indicated
'
variables and parameters assuming
surface currents to be absent.

7t
(ii) Plot a vs 0 for the range 0 < a < 2.
(iii) For e ; : , find the magnetic flux density
m magnitude and direction at the
interface. 10

3. (a) A small number of readily ionized donors Nn


are added to an intrinsic semiconductor, such
that N 0 << ni, where 'ni' is the intrinsic carrier
concentration. Find the free electron and hole
concentration in a semiconductor, accurate to
the first order Nn /n;. ·8
A-DMHH-N-FUA 5 [Contd.]

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(b) Two identical siliCon junction diodes D 1 and D2 .

are connected back to back as shown below. The


reverse current I8 of each diode is. 10--8 A and
the breakdown voltage VB is 50 V. Find the Vn1
and Vn voltages dropped across diodes D1 and
2

D 2. Haウ[・セ@ =25mv) 8
1 , D2

5V
•\
(c) An n-type silicon bar is doped uniformly by
phosphorus atoms to a concentration of
4·5 x 1Q15fcc. The bar has a cross-section of
1 mm2 and a length of 10 em. It i,s illuminated
unifonnly for region x < 0 as shown in the
figure. Assume optical generation rate
1021 electron-hole pairs per cm3/sec. The hole
lifetime and electron lifetime are equal and are
1 JlSec. Find the hole and. electron diffusion
current at x = 34·6 J.lm. 8
Light
/

n-type
セ@ semiconductor

x<O x>O 10 cm
x=O

A-OMHH-N-FUA 6 [Contd.]

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(d) Design a self biasing circuit such that
le=5mA, Vee=8V, VE=6V, 8=10,
hre = 200 and Vee= 20 V. B
Vee

セ@ (e) Ann-channel MOSFET-'T' having a VT of 2 V


(Threshold voltage) is used in the circuit as
shown. Initially 'T' is OFF and is in
steady-state. At time t = 0, a step voltage of
magnitude 4 V is applied to the input so that
MOSFET turns 'ON' instantaneously. The
device parameters are
2
K=5mA/V
Rns==
Cns=O
Cna=O

1 k.Q
'T'
vo
+o I セ@ lOOpF
-r-
1ov
vin

Draw the equivalent circuit and calculate the


time taken for the output to fall to 5 V. 8
A-DMHH-N-FUA 7 [Contd.]

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4. (a) What is a Z·transform? Give its utility. 4
(b) Obtain the Inverse - Laplace transform of the
following:
Y(s)= s 10
s(s 2 +3s+2)
(c) (i) For the channel and message
probabilities given in the figure below,
determine the best decisions about the
transmitted message for each possible
received response.
(ii) . With decisions made as m part (a),
calculate the probability of error.

(Ml)
P(M1) = 0·5 oE---*-ll.-"--3>0rl

(M2)
P(M2) = 0·2 イZCRN⦅M]L[セB@
10
(d) 40% of the population of a town are voterS, 50%
are educated and 20% are educated-voters. A
person is chosen at random.
(i) If he is educated, what is the probability
that he is a voter ?
(ii) If he is a voter, what is the probability
that he is not educated ?
(iii) What is the probability that he is neither
a voter nor educated? 10
(e) Find the inverse 'Fourier transform' of signum
function sgn. 6
A-DMHH-N-FUA 8 [Contd.)

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5. (a) In the network shown below, the switch is
closed at. t = 0. Obtain the current i 2(t) in the
network for t セ@ 0. 10
10!2 1H lH

セN@
lOOV-=- 11 100

(b) Find the short circuit admittance parameters


for two port networks as shown in figure with
R1 =Ra =Rb ='1 0 and C 1 =C 2 =c.= 1 Q. 14

1 2

'
1<>-----< )---o2'

(c) For the network shown below, obtain the


Z-parameters. Is the network reciprocal ? 6

A-DMHH-N-FUA 9 [Contd.J

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(d) Determine the voltages V2 and V3 in the
following circuit using cut-set analysis. Choose
the circuit elements marked 1, 2 and 3 in the
tree for this purpose. 10
5
2Q lA
2 1Q

2Q 1Q
sv-=-G) ®

\.
6. (a) Find the force on a point charge of 50 J.LC at '
(0, 0, 5) m due to a charge of 5001! J.LC that is
uniformly distributed over the circular disk
イセUュL@ z=Om. 8
(b) 40 nC of charge is uniformly distributed around
a circular ring of radius 2 m. Find the potential
at a point on the axis at 5 m from the plane of
the ring. What would be the voltage if all the
charge is at the origin like a point charge ? 8

(c) A 15 m length of 300 Q line must be connected


to a 3 m length of 150 Q line that is terminated
in a 150 Q resistor. At f = 50 MHz, find the
characteristic impedance and length of a
quarter wave line to match the two lines. If no
transformer is used, what is the VSWR on the
main line? 10

A-DMHH-N-FUA 10 [Contd.]

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(d) Determine the cut-off frequencies for the five
modes in a rectangular waveguide of dimension
2·3 em x 1·0 em. Find the guide wavelength and
phase velocity of those modes at a frequency of
QᄋUセ@ u

7. ·(a) The expected value of current through a resistor


is 20 rnA. However, the measurement yields a
current value of 18 rnA. Calculate
(i) Absolute error
(ii) Percentage error
セ@
(iii) Relative accuracy
(iv) Percentage accuracy
(v) Precision for sth measurement if the set of
10 measurements are: 16, 19, 20, 17, 21,
18, 15, 16, 18 and 17 rnA. 10

(b) A CRT has an anode voltage of 2000 V and


parallel deflecting plates are .2 em long and
5 mm apart. The screen is 30 em from the
centre of the plates. Find the input voltage
required to deflect the beam through 3 em. If
the input voltage is applied to the deflecting
plates through amplifiers having an overall
gain of 100, calculate the velocity of electron
beam. 10

A-DMHH-N-FUA 11 (Contd.]

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(c) A thermistor has a resistance of 4 kQ at 0°C
and 800 Q at 40°C. Determine the range of
resistance to be measured if the temperature
rises from 50°C to 100°C. 10

(d) The diaphragms of pressure measuring


transducer are 2·5 cm 2 in area and are 3 mm
apart. A pressure of 104 Nfm2 produces a
deflection of 0·3 mm of a diaphragm. Without
any pressure, the capacitance is 300 pF.
Determine the capacitance after a pressure of
104 Nfm2 is applied. 10
)

A-DMHH-N-FUA 12

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Ehf,'(' '/C:'.
·!..-nj·,
''" OCRVII'EO
..; . i. l\.rl',;O.'

E.v-, ....·.c·l,.,,· .·"""


' .... , .
. ,.,
I
I.J,.
セQT@

Sl. No. 7 418 6 A-DMHH-N-FU B

ELECTRONICS AND
TELECOMMUNICATION ENGINEERING
Paper-II
( Conventional )

I
Time Allowed : Three Hours I I Maximum Marks : 200 I
INSTRUCTIONS
Please read each of the following instructions
carefully before attempting questions.
Candidates should attempt FIVE questions in all.
Question No. 1 Is compulsory.
Out of the remaining SIX questions, attempt
any FOUR questions.
All questions carry equal marks. The number of marks
carried by a part of a question is Indicated against it.
Answers must be written in ENGLISH only.
Assume suitable data, If necessary, and indicate the
same clearly.
Unless otherwise mentioned, symbols and notations
have their usual standard meanings.
Neat sketches may be drawn, wherever required.
All parts and sub-parts of a question are to be
attempted together In the answer-book.
Attempts of questions shall be counted in
chronological order .. Unless struck off, attempt of a
question shall be counted even if attempted partly.
Any page or portion of the page left blank In the
answer-book must be clearly struck off.
One linear graph sheet is attached to this
question paper. This should be carefully detached
for use by the candidate and securely attached to
the answer-book.

/57 [ P.T.O.

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1. Answer all of the following :

(a) A p-n-p transistor has VEB =0·8 Vat a


collector current of 1 A. What do you
expect VEB to become at ic = 10 rnA and
at ic = 5 A? 5

(b) For a particular IC fabrication, the


quantity _!.Jln Cox =10 1J.A/V 2 and Vt =1 V.
2
In an application in which

Vas = Vns = Vsupply = 5 V

a drain current of 0·8 rnA is required of


a device of minimum length 2 Jim. What
value of channel Width must the design
use? 5

(c) Implement the logic expression

Y=AB+CD+EF

using CMOS transistors. 5

(d) If the forward path transfer function of


a non-unity feedback system is

G(s) = Kl (1 + s1j)
s(l + sT2 )

A-DMHH-N-FUB/57 2

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and the transfer function of the
feedback element is

H(s) =K 2 (1 +sT3 )
l+sT4
find the steady-state error for unit-step
and unit-ramp input signals. 5

(e) A 12-cavity cylindrical magnetron of


5 mm anode radius, 3 mm cathode
radius, operates at 2450 MHz, with a
flux density of 0 ·18 Wb/ m 2 and anode
voltage of V0 =3500 V. Find the cut-off
voltage for the given flux density and
cut-off flux density for the given V0 . 5

(f) Find the earner and modulating


frequencies, the modulation index and
the maximum deviation of the FM wave
represented by the voltage equation

v = 12sin(6 x 10 8 t + 5sin1250t)
What power will this FM wave dissipate
in a 10 Q resistor? 5

(g) Give details of all the components of


the 'Bus Interface Unit (BIU)' in the
8086 microprocessor. 5

(h) What is a pointer in C? How is it


initiated? Give an example. 5

A-DMHH-N-FUB/57 3 [ P.T.O.

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2. (a) Consider the large signal BJT models
shown in Figs. 2.a1 and 2.a2 . What are
the relative sizes of the diodes DE and
Db for transistors for which B= 10? 10

E E

Fig. 2.a1 Fig. RNセ@

(b) For the circuit of Fig. 2 b 2 , an ideal


diode is used. Sketch the output for
the input shown in Fig. 2q. Label the
most positive and negative output levels.
Assume CR >> T. 10

IOV--- o--j f--r---r--<>Vo


c
D
R
-lOV R

Fig. 2.b 1 Fig. 2.b2

A-DMHH-N-FUB/57 4

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(c) Consider the circuit shown in Fig. 2.c.
Suppose the operational amplifier is
J.LA. 7 41 op-amp. Model the operational
amplifier as an ideal op-amp. Determine
how the output voltage, v0 , is related to
the input voltage, v5 • 10

For J.LA. 741,


Vsat = 14 V, isat = 2mA
+ SR = Slew rate limit
= 5x105 ¥
Supply voltages + 15 V
.and-15V

Fig. 2.c

(d) Analyze the circuit of Fig. 2. d to


determine the drain current and the
drain voltage. Assume that the deple-
tion type MOSFET has V1 = -1· 0 V,
k=0·5mA/V 2 andA.=O. 10

lOV

10M

10M

Fig. 2.d

A-DMHH-N -FUB/57 5 [ P.T.O.

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3. (a) Draw a gate level diagra m of a
BCD adder and explain its operati on
with an examp le. 10

(b) Design a two-inp ut, two-ou tput sequen ce


detecto r which produc es an output '1'
every time the sequen ce 0 101 is detecte d
and an output '0' otherw ise. 10

(c) Design the circuit of an XNOR using


AOI gate and explain how it can be used
as a 1-bit compa rator. Use the basic
gates. 10

(d) Realize the following gates using CMOS


static gates. Explai n the operat ions with
the truth table : 10
(i) Y=(A+ B)

(ii) Y=AE !lB

4. (a) The open-lo op transfe r functio n of a


unity feedba ck system is given by
'
K
G(s) = --- --= 2
--- -
(s + 2)(s + 4)(s + 6s + 25)

Find the values of K which will cause


sustain ed oscilla tions in the closed- loop
system . ·What are the corresp onding
oscilla tion freque ncies? 10

A-DM HH-N- FUB/5 7 6

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(b) A unity feedback system has the open-
loop transfer function
K
G (s) =-:-=-=---:-
s(s+ p)

Determine the values of K and p sa that


the settling time and peak overshoot
will be 4 seconds and 10% respectively.
Take ± 2% of the steady-state value
defmition for settling time. 10

(c) The open-loop transfer function of a


unity feedback system is given by

G(s) = K
s(sT+ 1)

(i} By what factor the amplifier gain K


should be multiplied so that the
damping ratio is increased from
0·2 to 0· 8?

(ii} By what factor the time constant T


should be multiplied so that the
damping ratio is reduced from
0·6 to 0·3?
Find the range of K for which the system
whose characteristi c equation is given
below is stable :

s 3 +(K +0·5)s 2 +4Ks+50 =0 10

A-DMHH-N -FUB/57 7 [ P.T.O.

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(d) In the feedback system shown m
Fig. 4.d

. Using the Hurwitz-R outh method,


determine the necessary conditions for
the system to be stable. 10

Fig. 4.d

5. (a} Let the modulatin g signal m(t) be


a sinusoida l of amplitude A and
frequency fo in a delta modulator .

(i) If the step size S is larger than 2A,


show that m(t), the approxim ation
to the input signal m(t), is no longer
valid.

(ii) In order to avoid slope overload in


OM, prove that the Arnax = Sfs ,
2rrfo
where fs is the sampling ヲイ・アオセョ」ケN@

(iii) Show that in order to avoid both


step size limiting and slope overload,
the condition fs > 3f0 must be
satisfied. 15

A-DMHH -N-FUB/5 7 8

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(b) An optical fiber system employs an LED
transmi tter which launche s an average
of 300 J.lW of optical power at a
wavelen gth of 0· 8 J.lm into the optical
cable. The cable has an overall attenu-
ation of 4 dB/krn. The APD receiver
requires 1200 inciden t photons in order
to register a binary '1' with a BER
of 10-JO. Determi ne the maximu m
distance (withou t repeater s) provided
by the system when the transmi ssion
rate is 1 Mbps. 15

(c) A continu ous random variable X is


constrai ned to a peak magnitu de M.
Show that-
Hセ@ the differen tial entropy of X is
maximu m when it is uniform ly
distribu ted;
(ii) the maximu m differen tial entropy
of X is log 2 2M. 10

6. {a) Determi ne the propaga ting modes


in a rectang ular wavegu ide of
l·Ocmx 2·3cm, at ll·OGH z, if the
guide is Hセ@ air-f!lle'd and (ii) filled with
dielectri c of refractiv e index 1· 5. Identify
the frequen cy range of propaga tion for
the domina nt mode, and calculat e the
propaga tion constan t at 6·0 GHz for
that mode in both the cases. 15

A-DMH H-N-FU B/57 9 I P.T.O.

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(b) For the 2-elem ent array of short dipole s
shown in Fig. 6.b, fmd the norma lized
result ant field and sketc h the patter ns
in XZ.pl ane using patter n multip licatio n.
Given that d = "A/4, and inter- eleme nt
phase differ ence a= -n/2. Assum e
unifor m excita tion ampli tudes . 15
z
<D .,_ , Io
MGhセク@
、NセM

Fig. 6.b

(c) For a juncti on of two lossle ss


transm ission lines of chara cteris tic
imped ances zi and z2, find the
scatte ring matri x with and witho ut
using norma lized voltag es. 10

7. (a) Write an 8085 ALP to multip ly respec tive


bytes of two array s each 16 bytes long
stored in memo ry seque ntially from
2000H and 3000H respec tively . The
result ing array shoul d be from 4000H .
Write your progr am from 5000H and
the multip licatio n subro utine from
6000H . Assum e positi ve numb ers and
each multip licatio n is less than 255 . 20
10

A-DM HH-N -FUB /57 10

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(b) lf CS = OOOOH, DS = lOOOH, ES = SS
= 2000H, BP = BX = SI = DI = AOOOH
and SP = OOOOH, then explain and
indicate the locations from which data
required for the following instructio ns
would be fetched : 10

MOVSB
JMP [BP+10H]
IN AX, DX
IDIV [1234]
CALL FARPTR [2000H]

(c) Write a C program segment to generate


first n (n セ@ 3} Fibonacci numbers. Use an
iterative method. Explain the flowchart
also. 10

***

A-DMHH -N-FUB/5 7 11 884-75*

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A-DMHH-N-FUB
'74186
Do not write Roll No. on this sheet. Sl. No.

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