LITHOGRAPHY STEPPER OPTICS

Source
Aperture Lithography
Handbook
Partial
Coherence Minimum feature size
Condenser (resolution)
of Illumination
Lens
σ = sinθc/sinθo
MFS = k1λ/NA
k1 ≈ 0.8
Mask (resist/enhancements)

Depth of Focus

DOF = k2λ/(NA)2
Projection k1 ≈ 1
Numerical Lens (enhancements)
Aperture θc θo
NA=sinθo
Wafer

optrev.fm
WHAT A DEEP-UV STEPPER REALLY LOOKS LIKE

optlitho.doc
“WAVEFRONT ENGINEERING” TECHNIQUES IN
PHOTOLITHOGRAPHY

Modified Illumination

Light Source
conventional annular quadru Effective
pole
Phase Shifting
Source

Mask
Condenser
Lens
Phase 0π 0 π 0
alternate attenuated Mask
Pupil Filtering
Projection
Pupil
Function Lens
Phase Distribution
Aperture
Multiple Exposure (Pupil)
FLEX Wafer

Wafer
Enhanced Resists
Stage
Surface Imaging

New Image Formation Exposure Optics

Techniques

optrev.fm
PHASE-SHIFT MASK TECHNIQUES

mask mask
structure structure

amplitude amplitude
E-field E-field
at mask at mask

intensity intensity
on wafer sidelobe on wafer

Alternating phase mask Attenuated phase mask

(Levenson)

optrev.fm
VACUUM ULTRAVIOLET TRANSMISSION CUTOFFS
OF AVAILABLE OPTICAL MATERIALS

2-3 mm thick

UC Berkeley
Stanford NSF/SRC-ERC: LITHOGRAPHY FOR 100 nm AND BEYOND
MIT
CONTINUED EXTENSION OF OPTICAL PROJECTION

• Historical approach: (MFS = k1λ/NA)

⇒ Increase NA
⇒ Decrease λ
⇒ Decrease k1

• Transmission optics reach to 193 nm

- Expect limiting NA ≈ 0.75, k1 ≈ 0.5 ⇒ MFS ≈ 130 nm

• What about Vacuum UV? (λ = 100 nm - 200 nm range)

- Diminishing returns absent further NA increase

srcjb96.doc 1996 SRC Lithography Review J. Bokor

T Y• O F•
SI C
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LIF

ELECTRONICS RESEARCH LAB, UNIVERSITY OF CALIFORNIA, BERKELEY

ORN
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LI G H T
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•1868•
 OPTICAL LITHOGRAPHY IN THE FUTURE
OPTICAL LITHOGRAPHY TODAY (1997) 100 nm → 30 nm FEATURE SIZE
0.25 µ m FEATURE SIZE

DUV (248 nm), Catadioptric optics

EUV (13 nm), All-reflective optics,
Reflection mask
 EUVL ENGINEERING TEST STAND

DARPA/SRC Network for Advanced Lithography

J. Bokor
6 ILP 3/12/98
 1997 Resist / EUVL Imaging Status

TSI process
No crosslinker
Etch selectivity 45:1

70 nm lines
70 nm lines/spaces (2:1 pitch)
Coded for 70nm
15.6 mJ/cm2 dose
10x microstepper

7
J. Bokor Dec. 9, 1997 IEDM Lithography Panel
 EUVL Trend

10 1
Lithography
Lithography “Laws”
“Laws”
••CD
CD==kk11*λ/NA
*λ/NA
••DOF 2
DOF==1.2*λ/NA
1.2*λ/NA2
DOF ( µ m)
NA (k1=0.3)

NA
1 NA (k1=0.7) 0.1
DOF(k1=0.3)
DOF(k1=0.7)

“k
“k11factor”
factor”
Conventional:
Conventional:kk11==0.7
0.7
0.1 0.01
Strong
StrongPSM:
PSM:kk1 ==0.3
0.3 100 10
1
CD (nm)

J. Bokor
UC Berkeley