Beruflich Dokumente
Kultur Dokumente
Source
Aperture Lithography
Handbook
Partial
Coherence Minimum feature size
Condenser (resolution)
of Illumination
Lens
σ = sinθc/sinθo
MFS = k1λ/NA
k1 ≈ 0.8
Mask (resist/enhancements)
Depth of Focus
DOF = k2λ/(NA)2
Projection k1 ≈ 1
Numerical Lens (enhancements)
Aperture θc θo
NA=sinθo
Wafer
optrev.fm
WHAT A DEEP-UV STEPPER REALLY LOOKS LIKE
optlitho.doc
“WAVEFRONT ENGINEERING” TECHNIQUES IN
PHOTOLITHOGRAPHY
Modified Illumination
Light Source
conventional annular quadru Effective
pole
Phase Shifting
Source
Mask
Condenser
Lens
Phase 0π 0 π 0
alternate attenuated Mask
Pupil Filtering
Projection
Pupil
Function Lens
Phase Distribution
Aperture
Multiple Exposure (Pupil)
FLEX Wafer
Wafer
Enhanced Resists
Stage
Surface Imaging
optrev.fm
PHASE-SHIFT MASK TECHNIQUES
mask mask
structure structure
amplitude amplitude
E-field E-field
at mask at mask
intensity intensity
on wafer sidelobe on wafer
optrev.fm
VACUUM ULTRAVIOLET TRANSMISSION CUTOFFS
OF AVAILABLE OPTICAL MATERIALS
2-3 mm thick
UC Berkeley
Stanford NSF/SRC-ERC: LITHOGRAPHY FOR 100 nm AND BEYOND
MIT
CONTINUED EXTENSION OF OPTICAL PROJECTION
A
NIV
LIF
LI G H T
LE
T
H
TH
ER A
E BE
•T •
•1868•
OPTICAL LITHOGRAPHY IN THE FUTURE
OPTICAL LITHOGRAPHY TODAY (1997) 100 nm → 30 nm FEATURE SIZE
0.25 µ m FEATURE SIZE
TSI process
No crosslinker
Etch selectivity 45:1
70 nm lines
70 nm lines/spaces (2:1 pitch)
Coded for 70nm
15.6 mJ/cm2 dose
10x microstepper
7
J. Bokor Dec. 9, 1997 IEDM Lithography Panel
EUVL Trend
10 1
Lithography
Lithography “Laws”
“Laws”
••CD
CD==kk11*λ/NA
*λ/NA
••DOF 2
DOF==1.2*λ/NA
1.2*λ/NA2
DOF ( µ m)
NA (k1=0.3)
NA
1 NA (k1=0.7) 0.1
DOF(k1=0.3)
DOF(k1=0.7)
“k
“k11factor”
factor”
Conventional:
Conventional:kk11==0.7
0.7
0.1 0.01
Strong
StrongPSM:
PSM:kk1 ==0.3
0.3 100 10
1
CD (nm)
J. Bokor
UC Berkeley