80 % Course

MS 852 Advance Surface Coatings Final Term Examination (80% Paper)
DC-Sputtering & DC-glow discharge (M.Aamir Hassan)
1. The dc-sputtering is carried out at a pressure of ___________________
MS 852 Advance Surface Coatings (a) 1 - 0.1 Torr (b) 10 - 100 Torr (c) 1 - 0.1 mTorr (d) 10 - 100 mTorr
Final Term Examination (80% Paper) 2. The dc-sputtering is used to deposit films of ________________
(a) Conducting polymers (b) Insulator materials only

(c) Conducting metals/alloys only (d) any material
9/3/2010 3. Argon gas is used as sputter gas in DC sputtering because __________________

School of Chemical and Materials Engineering (SCME-NUST)
Muhammad Khaliq U Rehman (2009-NUST-MS PhD-MS-E-06) (a) Argon is an inert gas (b) No special reason (c) Highly available (d) None
4. In DC-sputtering of the ________ target, ion bombardment quickly builds up a

positive charge.
(a) Metal (b) non-metal (c) both (a) & (b) (d) insulating
5. If the insulating target is used in DC-sputtering the glow-discharge will sustain

for a longer time but the film will not be deposited (true/false)
6. In DC-glow discharge, a very _________ current flows at first due to the _________
initial charge carriers in the system.
(a) small, enormous (b) small, collisions between (c) small, few (d) None
7. When the voltage is increased in DC glow discharge system, which of the

following process is the initiating step to create more ions:
(a) Ion collisions with cathode (b) generation of secondary electrons (c) ionization of gas (d) None
8. With charge multiplication in DC glow discharge, the current increases rapidly

and the voltage __________
(a) Remains constant (b) increases significantly (c) decreases sharply (d) None
9. If when enough of the electrons generated produce sufficient ions to

regenerate the same number of initial electrons, the discharge
becomes_______________
(a) Self-sustaining (b) Townsend discharge (c) Cathode discharge (d) None
10. When the gas begins to glow now and the voltage drops, accompanied by a
sharp rise in current, we call it ________________
(a) Townsend glow (b) normal glow (c) abnormal glow (d) None
11. The operating domain for sputtering is _______________ regime.
(a) Normal glow (b) cathode glow (c) Townsend (d) abnormal glow
Muhammad Khaliq U Rehman (2009-NUST-MS PhD-MS-E-06) Page 2
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MS 852 Advance Surface Coatings Final Term Examination (80% Paper) MS 852 Advance Surface Coatings Final Term Examination (80% Paper)
12. Adjacent to the cathode there is a highly luminous layer known as 8. ________ are highly mobile and can easily follow the change of electric field for
the__________ any frequency in RF sputtering
(a) Normal glow (b) cathode glow (c) Townsend glow (d) abnormal glow (a) electrons (b) ions (c) Radicals (d) Electron and ions
9. ‘RF’ stands for ________ in RF sputtering

13. The light emitted from a highly luminous layer adjacent to the cathode
(a) Regenerated Frequency (b) Radio frequency (c) Rejoining Frequency (d) None
depends on the _____________________
(a) Current & impedance (b) incident ions & the cathode material. (c) Townsend glow (d) abnormal 10. Typically rf systems operate at 13.56 MHz or at harmonics thereof, with peak-
glow to-peak voltages of greater than _______ and power of up ________watts/cm2 on the
electrodes.
14. In the ______________region, neutralization of the incoming discharge ions and
positive cathode ions occurs. (a) 10000V, 100 watts/cm2 (b) 1000V, 10watt/cm2 (c) 100V, 10 watts/cm2 (d) None
(a) Normal glow (b) cathode glow (c) Townsend glow (d) abnormal glow 11. Typically in RF systems a discharge is established for pressure as high as
0.5m Torr and below (True/False)
15. Crookes dark space is a region where the applied voltage ______________
12. In RF sputtering if the area of target electrode is smaller than other then
(a) Increases linearly (b) increases exponentially (c) drops (d) becomes 0
(a) Capacitive reactance is smaller (b) RF circuit is asymmetric (c) both a & b (d) None
RF Sputtering (FL. Asad Hameed)

13. In RF sputtering the electrodes are
(a) Insulator (b) conductors (c) negatively biased (d) Both a & b
1. Advantage of RF sputtering over Dc sputtering are:
A. Low chamber Pressure B. Less power consumption
C. Sputtering of metallic targets D. High frequency used 14. Reynolds number_____________
(a) is a dimensionless parameter (b) is For Viscous flow only (c) tells about laminar or turbulent flow
(a) All of above (b) A & C only (c) B and D only (d) A & B only
(d) All of above
2. Target with resistivity more than 1012 Volts are sputtered through RF. (True/False)
15. Subsonic velocity of free stream gases in CVD __________ with decreasing area.
3. Electrons and ions both remain mobile for frequency value ___________
(a) decreases (b) increases (c) remains constant (d) exponentially decreases
(a) <50 KHz (b) 13.56 MHz. (c) >50 KHz (d) For any value of frequency
Magnetron Configuration (Shahzad Slam)
4. In RF sputtering the target is negatively biased by applying an external voltage
which enables high ion mobility. (True/False) 1. If magnets are heated during operation in a magnetron configuration, the magnetic
strength
5. A matching network is circuit whose _________ is matched with the plasma.
a) Degrades b) Remains unaffected
(a) Inductance (b) Impedance (c) resistance (d) capacitance
c) Increases d) None of above
2. If the electron path is parallel to the magnetic field lines, the electron _________ by
5. Disadvantage of RF sputtering is that even the growing film is sputtered.
the magnetic field
(True/False)
a) Will be affected b) Will not be affected
6. For efficient RF sputtering the area of the target electrode should be large c) Will be lost d) None of above
compared with the total area of the other, or directly coupled, electrode (True/False) 3. If the electron trajectory is normal to the magnetic field the electron will
_______________.
7. In RF sputtering Target acts as anode _________________
a) Be trapped in a closed path b) Be lost
(a) For complete cycle (b) For half cycle (c) Till plasma is generated (d) Once impedance is matched c) Accelerate on to substrate d) None of above
Muhammad Khaliq U Rehman (2009-NUST-MS PhD-MS-E-06) Page 3 Muhammad Khaliq U Rehman (2009-NUST-MS PhD-MS-E-06) Page 4
4. If there is both an electric, E, and magnetic, B, field present, then the electrons have a 15. If two unbalanced magnetron are installed vertically opposed to each other such that
drift velocity ______________ to the E × B plane in addition to spiraling around the they have SAME polarity, such a configuration is known as
magnetic field lines.
a) Mirrored Magnetron b) Bipolar pulsed magnetron
a) Perpendicular b) Parallel c) Closed filed Magnetron d) Unipolar pulsed magnetron
c) Opposite d) None of above 16. If two unbalanced magnetron are installed vertically opposed to each other such that
5. Ion density is ________ in region where the E and B fields are normal to each other they have OPPOSITE polarity, such a configuration is known as
a) Negligible b) Minimum a) Mirrored Magnetron b) Bipolar pulsed magnetron
c) Maximum d) None of above c) Closed filed Magnetron d) Unipolar pulsed magnetron
6. Magnetron configuration ___________ the sputtering from the chamber walls and 17. In CFUMBS or closed field unbalanced magnetron sputtering, dense plasma is
substrate maintained near substrate region resulting in rapid ion bombardment of growing film
a) Decreases b) Stops a) True b) False
c) Increases d) None of above 18. Adhesion of diamond like carbon (DLC) can be increased by
7. Use of magnets causes is a ____________ method regarding the target material
economics. a) rf Magnetron Sputtering b) DC Magnetron Sputtering
c) CFUBMS d) IBAD
a) Inefficient b) Efficient 19. DC reactive sputtering to form alumina results in sub-stoichiometric compositions and
c) Increases d) None of above low microhardness because of the following factors
8. Electrons can be trapped near the target if
a) Arcing b) Low partial pressure of oxygen
a) E and B are perpendicular b) E and B are parallel c) Low reaction rates d) Target charge accumulation
c) Only E is present d) Only B is present 20. Arcing can be prevented when using insulator targets using
9. Using a negative bias on a substrate modifies film characteristics by
a) rf Sputtering b) Bipolar pulsed magnetron
a) Increased adatom mobility b) Substrate heating c) Ion assisted deposition d) Unipolar pulsed magnetron
c) Point defect generation d) All of the above
10. Decreasing gas pressure results in ________ of gas density and the number of Ion Assisted deposition (Asif Mahmood)
ionizing collision ___________
a) Increase, increases b) Increase, decreases 1) Cathodic arc vaporization is widely used in the tool coating industry for nitride, -----------
c) Decrease, increases d) Decrease, decreases ------------- on biased substrate
11. Using unbalanced magnetron with stronger inner magnet, a secondary plasma is i. carbides deposition
generated away from the cathode region, resulting in increased ion bombardment on a ii. carbonitrides deposition
biased substrate iii. nitride deposition
iv. all of the above
a) True b) False
12. In conventional magnetron configuration, plasma is confined ________ the target 2) arc vaporization is characterized by -------------
region i. hot Cathodic arc
ii. cold cathode arc, molten anode or gaseous arc
a) Not confined at all b) Near iii. just by cold cathodic arc
c) Away d) None of these iv. none
13. In conventional magnetron configuration the ion current density ________ with the
________ in substrate to target separation. 3) In laser induced vaporization, we have ------------------ are produced in vapoour plasma
a) Increases, increases b) Increases, decrease that are accelerated to substrate.
c) Decrease, increase d) Decrease, decrease i. Small no. of ions
14. PMS or Pulsed Magnetron Sputtering results in deposition of films that are ii. moderate no of ion
iii. large no of ions
a) Non Stoichiometric b) Stoichiometric iv. none of the above.
c) Oxygen deficient d) Porous
4) Advantages of ion plating involve,
i. Ability to introduce heat and defects into the first few surface layers to decrease 12) In ION ASSISTED DEPOSITION, if there is only single relation of substrate, the ion
nucleation, source might be placed directly --------------- of substrate.
ii. excellent surface covering ability i. Below the center
iii. Ability to gave in-situ cleaning of the substrate surface ii. Above the center
iv. Both b and c iii. Parallel to the center
iv. None of these.
5) Sputter IP and reactive IP are types
i. Alternating IP 13) To estimate the time required for cleaning substrate one should consider the amount of
ii. arc IP material which is sputtered, that is determined in part by ---------- of substrate material and
iii. IP the of ---------------- on substrate,
iv. none of the above. i. Mechanical properties, unknown species
ii. Sputter yield, known species
6) For non-reactive IP, we have important features which includes iii. Sputter yield, unknown species
i. mass distribution and energy distribution and flux ration of bombarding species iv. None of the above
ii. charge distribution of the bombarding species
iii. just flux ratio of bombarding species 14) If the substrate is poly crystalline and composed of relatively large crystallites, the
iv. Both micro-roughness of substrate --------------------- significantly, if the substrate is ion
bombarded for a ------------------ time.
7) Surface activation involves: i. Decrease, long
i. removal of defects ii. Increase, short
ii. removal of reactive site iii. Decreases, short
iii. generation of reactive sites and defects iv. Increase, long
iv. both a&b.
15) Plasma based ion plating, the flux ratio can be -------------------- for high energetic ions
8) -----------------------------&-------------------- are associated effects for Ion plating. (>500eV)
i. Radiation damage and surface cooling i) 10:1 ii) 5:100 iii) 10:20 iv) 10:50
ii. Radiation damage and surface heating
iii. Radiation formation and surface cleaning Ion Assisted deposition (Qazi Mujtaba)
iv. Radiation formation and surface heating.
1) Ion plating is another type of
9) In --------------- the chemical reactivity of energetic bombarding and deposition species is
i) CVD ii) PVD iii) both of these iv) none of these.
more important,
2) The substrate surface and the growing film are subjected to a or _______
i. Non-reactive IP,
bombardment by a flux of energetic atomic-sized particles
ii. reactive IP
i) Continuous, periodic
iii. Quasi-reactuve IP
ii) discontinuous, periodic
iv. Both c and b.
iii) Discontinuous, unperiodic
iv) continuous, unperiodic
10) Relative ion plating is a general term, used for:
3) We have characteristics like ---------------- and -------------------- of PVD films in case of
i. Specification of origin of depositing species
ION ASSISTED DEPOSITION.
ii. Deposition of films of compound material.
i) Residual stress control, improved adhesion
iii. Both a and b
ii) Uncontrolled residual stress, improved adhesion
iv. None
iii) Residual stress control, unimproved adhesion
iv) None of these.
11) The effects related to microstructure on film properties can be observed in
4) Sputter cleaning and substrate activation development of –ve potential (sheath potential)
i. Low dielectric constant and varying grain size
w.r.t. plasma due to ------------ loss of electrons from the plasma to the surface
ii. Low density and high optical scatter.
i) More rapid loss ii) more rapid gain iii) slow loss iv) slow gains
iii. Low optical refrective index
5) Reactive bombarding ions cause Removal of hydrocarbons through generation of ---------
iv. All of the above.
- products in ion plating
i) Volatile ii) non-volatile iii) both of these iv) none of these
6) In ion plating, Bombardment during nucleation stage ------------- nucleation density
i) Increased ii) decreased iii) remains constant iv) variable. (a) Inelastic, thermal (flame) ionization.
7) In stages of interface formation, Interface formation ---------- diffusion and reaction due (b) Elastic, thermal (flame) ionization.
to formation of lattice defects (c) Mixed, Penning ionization
i) Increased (d) Elastic , penning Excitation
ii) decreased
4- Second ionization Energy is ______ Than first ioniz. Energy
iii) remains constant
(a) Larger
iii) varies with time. (b) Smaller
8) For mutually soluble materials, a -------------------------------- interface is formed (c) Equal
i) Just diffusion type ii) pseudodiffusion type (d) May be smaller/larger depending on conditions
iii) diffusion or compound iv) none of these.
9) Ion bombardment in ion plating during growth may influence 5- At high electron energies, the crossection for collision is
i) Surface morphology ii) density & grain size iii) electrical resistivity (a) High
iv) all of the above. (b) Low
10) In reactive ion plating, there is a deposition of a --------------- compound film as a result (c) Fairly high
of reaction between evaporated species and gaseous species. (d) Variable
i) Volatile ii) non-volatile iii) can be both iv) none of these.
11) Reaction b/w Ti and activated gaseous N2 to form TiN is an example of 6- O2 + e - → O + O -
i) Non-reactive ion plating (a) Dissociation
(b) Penning ionization
ii) reactive ion plating (c) Penning excitation
iii) ion beam assisted deposition none (d) Thermalization
12) In Quasi-reactive ion plating, A compound material is vaporized in a partial pressure of
reactive gas that aids in --------------- the species that are lost in the transport from the 7- _____________compares the emission interactions of the excited states of reference and
vaporization source to the substrate subject species to obtain the relative concentrations of the ground states.
i) Adding ii) replacing iii) generation iv) all of the above. (a) Actinometery
13) Thermal evaporation is source for depositing species with characteristics, (b) Doppler broadening
i) Low cost, ii) energy efficient, iii) high rates iv) all of the above. (c) Emission spectroscopy
14) For --------------- species, a pseudo-diffusion type interface is produced in ion plating. (d) None of above
i) Soluble ii) insoluble iii) partially soluble iv) none.
8- Electrons have a higher mobility than ions so electrons are lost to the surface at a higher rate
15) ---------------- residual compressive growth stresses can be built into a film with atomic
than are the ions, this produces a potential (sheath potential) between the surface and the
peening.
plasma. If the surface is grounded, the plasma is _____ with respect to ground
i) low ii) high iii) constant iv) none of these
(a) Positive
(b) Negative
(c) Floating
Plasma (Mahboob Alam) (d) May be all of above
1- If a high DC voltage is applied between two electrodes in a vacuum, the electrical response 9- If the bombarding species are chemically reactive they can form a compound layer on the
will depend on the gas pressure. At higher pressures surface if the reaction products are
(a) Normal discharge (a) Volatile
(b) Natural occurring ions , low quantity (b) Non volatile
(c) Anode spot (c) High atomic number
(d) None of above (d) None of above
2- As the pressure increases, the plasma between the electrode acts as a better and better
10- The cold cathode DC diode discharge operates in the ______ glow discharge region where
electrical conductor until finally an arc is formed and the
the cathode current density depends on the _____
(a) Voltage fall , current density increases
(a) Abnormal , applied voltage
(b) Voltage increases , current density falls
(b) Normal, applied voltage
(c) Voltage increases , current density increases
(c) Normal, pressure
(d) Both falls
(d) Both b and c
3- The ______ collisions between electrons and atoms/molecules in the plasma produce a large
11- If the magnetic field is parallel to a surface and the electric field is normal to the surface and
number and variety of excited species, radicals, and ions without having to have a high
electron leaving the surface will be accelerated away from the surface and forms ______
thermal gas temperature, as is necessary in ___________
(a) Straight a) charge exchange

(b) Spirals b) penning ionization
(c) A and b depending on energy c) penning excitation
(d) None of above d) none of above
12- Unbalanced magnetrons are often used in a dual arrangement where the escaping field of the 5) Thermal plasmas have
____ pole of one magnetron is opposite the ____ pole of the other magnetron. a) Low particle density
(a) North, south b) High particle density
(b) North , north c) V.low plasma density
(c) South, south d) Any value
(d) Both b and c
6) Volume near surface which is affected by loss of plasma species to the surface is called
13- At low frequencies up to about 50 kHz alternating current (AC) discharges have essentially a) Critical volume
the ____ b) Loss factor
(a) same structure as DC discharges c) Plasma sheath
(b) diff structure as DC discharges d) Both (1)and(2)
(c) any structure
(d) all of above 7) As electron have high mobility than npositive ions , so it is ______________ to generate a
high positive bias on surface incontact with plasma
14- Vacuum arc plasmas are formed by passing a ____ voltage, ____current DC current (arc) a) Favourable
between closely-spaced electrodes in a vacuum b) Not suitable
(a) low , high c) not impossible
(b) high , low d) None of above
(c) high, high,
(d) low, low 8) Secondary electron emission from the e-bombardment is ______ than from ion bmbrd.
a) Low
15- Plasma-based PVD processing can produce ultrafine particles (“soot” or “black sooty crap”) b) High
in the plasma region by vapor-phase c) V.low
(a) nucleation d) Vone of above
(b) hetrogeneious nucleation
(c) homo nucleation 9) If magnetic field is parallel to surface and electric field is normal to surface , electron leaving
(d) none of above surface will follow
a) Circular
Plasma (Shahid Ameer)
b) Spiral
c) Remin stationary
1) An “equilibrium plasma” is one that is d) None of above
a) volumetrically charge neutral
b) Net positive charge 10) A good plasma must be
c) Net negative charge a) Good vacuum
d) None of above b) Not depend upon vacuum
2) If a high DC voltage is applied between two electrodes in a vacuum, the electrical response c) Moderate vacuum system
will depend on the d) Both (a) and (c)
a) Gas pressure
b) Temperature 11) If process gas is inert , method of injection
c) Geometry a) Important
d) None of aqbove b) Not important
3) The maximum ionization probability (crossection) occurs when the electrons have an energy c) Case dependant
of about d) None of above
a) 100 ev
b) 200ev 12) For DC potentials during plasma system, high field regions are
c) 300ev a) Corners
d) 400ev b) Edges
c) All points have same field
4) when an energetic ion passes close to a thermal neutral and there is a transfer of an electron d) Both (a) and (b)
forming an energetic neutral and a thermal ion 13) Plasma has ____ as two types
a) Hot and energetic Q # 7: In air if DpP > 5 x 10-1 cm-torr then the flow regime will be ______________.
b) Energetic and cold A. molecular B. viscous
c) Hot & cold
d) None of above C. intermediate D. unpredictable
14) Magnetic field lines can easily pass through Q # 8: Compared with viscous flow, molecular flow is ______________.
a) Magnetic materials A. quite complex B. quite simple
b) Non magnetic materials
c) Both of these C. pressure independent D. not costly
d) None of these
Q # 9: Electron microscopes operate ______________.
15) Average neutral or ion energy is lower for A. within the molecular flow regime B. within the viscous flow regime
a) High pressure
b) Lower pressure C. in both molecular and viscous flow regimes D. None of the above
c) Intermediate pressure
d) Independent Q # 10: At ______________ the flowing gas layers are parallel.
A. centre of the chamber B. top of the chamber
Gas Flow Regimes (M. Khaliq U Rehman) C. higher gas velocity D. low gas velocity
Q # 1: According to kinetic theory of gases in an isolated sealed system, molecules certainly

move with high velocity so there is ______________ in such a system. REACTIVE SPUTTERING (WAQAR AHMAD)
A. high net gas flow B. low net gas flow
C. high net gas flow at high temperature and low at low temperature D. no net gas flow 1. In reactive sputtering, thin films of compounds are deposited on substrates by
sputtering from………………..target in the presence of a reactive gas .
Q # 2: In the chambers of high-vacuum evaporators which operate within the molecular flow a) Metallic b) compound c) both a & b d) none of these
regime, the mean-free path between intermolecular collisions ______________ the
dimensions of the system.
A. is large compared with B. is less compared with 2. Where high deposition rates are a necessity, the reactive sputtering mode of choice is
C. is negligible compared with D. has no comparison with either ………or………….
a) DC magnetron , RF manetron b) RF Magnetron, HPPMS c) DC , HPPMS d)
Q # 3: At higher pressure the mean-free path ______________. can both b & c
A. remains unchanged B. is reduced
C. is increased D. cannot be determined 3. Decreases in deposition rate well in excess of 50% occur because of
the…………………. of compounds relative to metals.
Q # 4: ______________ operative in atmospheric chemical vapor deposition reactors. a) Lower sputter yield b) higher sputter yield c) constant sputter yield d)
A. Molecular flow regime is B. Viscous flow regime is none of these
C. Both molecular and viscous regimes are D. No flow regime is
4. Which of the following list of compounds is not sputtered in reactive sputtering

Q # 5: Criteria for distinguishing between the flow regimes are based on the magnitude of the
Knudsen number, which is defined by the ratio of ______________. a). Oxides (oxygen)-Al,O,, In,O,, SnO,, SO,, Ta,O,
A. chamber diameter to gas mean-free path B. gas mean-free path to chamber diameter
C. both A & B D. None b). Nitrides (nitrogen, ammonia)-TaN, TiN, AlN, Si,N,
c). Halides(Halogens)- TaF3, TiBr3
Q # 6: The viscous flow regime is operative when gas transport occurs at pressures of roughly
______________ in reactors of typical size. d). Carbides (methane, acetylene, propane)-Tic, WC, Sic
A. 1 atm and above B. 0.01 atm and above
5. Color changes accompany the varied film in reactive sputtering is due to …………
C. between 0.01 and 1 atm D. 0.01 atm and below a) Deposition rate b) sputtered yield c) Film stiochometry d) none of these
6. In the case of titanium nitride films, the metallic color of Ti gives way to a light gold, a) mean-square velocity b) kinetic energy c) temperature d) all of above
then a rose, and finally a brown color with nitrogen partial pressure by……… 3-Rate of change of the normal component of momentum of impinging molecules per unit
a) increasing b) decreasing c) constant d) none of these area called
7. Deposition of TaN resistors employing dc diode sputtering at voltages of ………… a)temperature b)kinetic energy c)pressure d)volume
a) 3-5 kV b) 7-8 KV c) 9-10 KV d) 1-2 KV 4-the fraction of the atoms associated with grain boundaries is approximately.
8 . In dc discharges, sputtering is effectively halted at very high gas pressures, but the a) 3a/l b) 3l/a c) a/3l d) l/3a
limits are also influenced by the applied……………
a) Pressure b) temperature c) power d) current 5-At pressures below 10-3 torr will be
a) Zero b) very small c) not change d) very large
6- To deposit films under extremely clean conditions, contamination time is essentially
9. If no reactive sputtering took place, Pressure of the system would be somewhat the……… impingement flux
………… a) Direct b) inverse c)does not depend d) none
a) lower b) higher c) constant d) linearity
changes 7-When Q = 0 and the ultimate pressure of the pump, Po, is reached the effective pumping
10. The equilibrium value of Pressure system is established, subsequent changes in Qr, speed is then
cause P to increase or decrease …………… a) Becomes zero b) exponentially increases c) decreases d) becomes maximum
a) exponentionally b) linearly c) randomly d) inversily
11. reactive N2 gas is introduced into the system. As Qr increases from Qr(O), the 8) Diffusion pump works on the principle of
system pressure essentially remains at the initial value Po because N2 …….. with Ta and a) Kinetic vacuum pump b) Rotary mechanical pump c) positive displacement
is …………………….from the gas phase d) all of above
a) reacts , removed b) agglomerates , collected c) traps , replaced d) none of 9-single stagevane pumps have an ultimate pressure……………than two stage pump
these a) greater b) lower c) same d)extremely low
12. In reactive sputtering beyond a critical flow rate Qr*, the system pressure jumps to
10-If, for C = Sp, in magnitude, then the effective pumping speed become
the……..
a) Double b) unchanged c) half d) 3-times
a) original pressure b) new pressure c) remains constant d) none of
11-The gas transfer pumps are……….. And entrapment pumps are…………..
thes
a) reversible, irreversible b) irreversible, reversible c)binder, transfer d) none
13. 12- To minimize back streaming, attempts are made to …………..the oil before it enters the
The above Eq. is representation of…………..
high-vacuum chamber.
a) Symmetrical Charge Transfer. a) condense b) evaporate c) subliming d) exhausting
b) Asymmetric Charge Transfer. 13-A mechanical forepump is required to maintain an
Outlet pressure of about 0.1 torr because
c) Metastable- Neutral. a) They can discharge directly into atmosphere b) cannot discharge directly c) pump
speed exceed d) none
d) Metastable-Metastable Zonization. 14-When conductances are joined in series the system conductance is
a) higher than individual conductance b) lower than individual c) conductance
14. In general, the metal and alloy targets are fabricated by melting either in vacuum or
does not change d) all conductance added
under protective atmospheres, followed by …………
15-Criteria for distinguishing between the flow regimes are based on the
a)thermochemical processing b) thermomechanical processing c) thermoelectrical d)
a) Mean free path b) temperature c) Knudsen number d) flux difference
none of
15. The elemental and metal targets tend to have purities of 99.99% or better, whereas those
of the nonmetals are generally ………. IBAD (Majid Khan)
a) less pure b) high pure c) less impure d) high impure
1. In IBAD neutral flux is determined by using
Vaccum pump (Umer) (a)Farady Cup (b)quartz crystal monitor (QCM)
(c)ion gun (d)non of these
1-the most probable molecular velocity in the distribution is realized at the maximum value 2. Using IBAAD for optical and microelectronics appls, ion energy is relatively high to avoid
of f(u) and can be calculated from the condition electrically active defects and optical absorption
2 2
a) df(u)/du = 0. b) d f(u)/du = 0. C) f(u)=0 d)none of above
(a)True (b)False
2- Kinetic theory shows that the gas pressure P is related to 3. The disadvantage of IBAD process is that plasma-activation processes are not
operational for (c)i and iii (d)all of the above

(i) reactive deposition
(ii)non-reactive deposition 10. When sputtering source is used in ion plating, deposition rate can be determined by
(iii) the equipment costs are much higher than the plasma-based ion plating processes. (a)Quartz crystal monitors (b) optical adsorption monitors
(a)i and ii (b)ii and iii
(c)i and iii (d)i,ii,iii (c)faraday cup (d) either a or b
4. The ionization of species vaporized by evaporation or sputtering can be enhanced by
postvaporization ionization either by passing the vapor through a high- density ________ 11. The energetic species used to bombard the growing film in ion plating can be
electron cloud or through a high electron-density auxiliary plasma.
(a)either electrons or neutrals (b)either ions or neutrals
(a)low-energy (100 eV) (b)high-energy(>100eV)
(c)either ions or electrons (d)only ions
(c)enhanced (d)magnetic
5. IBAD technique can be used to enhance the filling of vias in semiconductor device 12. Films deposited by ion plating can have very high residual compressive stresses due to
fabrication and is one type of
(a)atomic seizing (b)neutral bombardment
(a)plama enhanced deposition (b)collimated deposition
(c)optical coated deposition (d)antireflecting coated deposition (c) atomic peening (d)high density of electrons
6. In IBAD processing the acceleration voltage in an ion
13. In reactive deposition, _________material is vaporized while in quasi-reactive deposition
gun extraction grid accelerates the ions_______ from the source to a substrate that is at _________ material is vaporized.
___________potential.
(a)compound,elemental (b)elemental, compound
(a) Towards,ground
(c)free radical, compound (d)non of these
(b) Away,negative
14. The process which is performed in a vacuum, the source of vaporization and the source of
(c) Towards,negative energetic ions for bombardment can be separate is called
(d) Away,ground (a)ion plating (b)IBAD
7. In PISECS plasma generator __________ confinement of the plasma is achieved. (c)ion assisted deposition (d)plasma based ion plating
(a)Magnetic (b)electrical 15. To minimize gas incorporation in ion plating at low deposition temperatures, the
bombarding energy should be kept ______________, or a __________ bombarding particle
(c)inertial (d)non of these can be used.
8. Elevated temperature is desirable in IBAD to achieve (a)high, heavy (b)high, light
(i)the highest density deposit film (c)low, light (d)low, heavy
(ii)the most complete reaction in reactive ion plating
CVD (Yasir)
(iii)optimum adhesion of the film with the substrate
1- ---------------------- reactions at the film/boundary layer interface, dictate deposition rate and
(a)i andiii (b)ii and iii film properties.
(c)i and ii (d)all of the above a. Homogeneous reaction c. Hetrogeneous Reaction
9. The first step in obtaining a reproducible plasma is to control the b. Dissociation reaction d. Precipitation
(i)partial pressures of gases in the system 2- Relatively hi T may give rise to solid state reactions, such as -------------------
(ii)the total pressure a. Phase transformations b. Precipitation
(ii) the mass flow of gases into the system c. Recrystallization & grain growth d. All of the above
3- Given below is which type of chemical reaction:
(a)i and ii (b)ii and iii
SiH4(g) Si(s)+2H2(g) c. Electron Cylotron Resonance (ECR) CVD

a. Pyrolysis c. Exchange
d. Magnetron CVD
b. Reduction d. Coupled
10- Deposition at -------- in Plasma assisted CVD also ------ the magnitude of the residual stresses.
4- -------------------- act as diffusion barrier between the coating and the substrate
a. Low temperature, reduces
a. Interlayer deposition
b. High temperature, reduces
b. Pickling
c. Low temperature, increases
c. Etching
d. high temperature, increases
d. Intralayer deposition
5- Substrate temperature Influences ---------------------- of reaction.

11- Wide variety of refractory materials have been used as filaments in HFCVD, including
a. Thermodynamics tungsten, tantalum, and rhenium, due to their -----------------------------------.
b. Kinetics a. high electron emissivity
c. Both thermodynamics and kinetics b. low electron emissivity
d. Diffusion c. high insulation
6- In a CVD reaction, substrate temperature is ----------------to diffusion rates. d. low refractive index
a. Directly proportional 12- The CVD process has following advantages in deposition process over PVD except---------------
----.
b. Proportional
a. Wide range deposition
c. Inversely proportional
b. Selective deposition
d. Independent
c. High deposition rates
7- If p and film growth rate are high in a CVD process, diffusion through the boundary
layer can become rate-limiting process d. No line-of-sight limitations
a. True 13- If low T precursors are not available in CVD process, the deposition T can be much higher.
b. False a. True
b. False
8- Deposition temperature may be too high in case of PECVD. 14- PECVD is used instead of simple CVD due to the fact that-------------------
a. Deposition temperature may be too high
a. True b. Deposition temperature may be too low
b. False c. Stoichiometry cannot be varied
9- ------------------ process is operated using a solenoid magnetic field at lo p (~ 1 mTorr) and d. Both a & c
prevents wafer bombardment.
15- For most CVD reactors, Reynolds number, ---------------------(laminar flow); stagnant boundary
a. Cold wall, parallel plate PECVD layer (w thickness δ) formation takes place.
b. Hot wall, parallel plate PECVD a. R< 100
b. R>100 a) Increases - by increases b) Increases – by decreases

c. R=100 c) decreases-by increases d) decreases-by decreases
12. Steep velocity gradient is noticeable going from maximum velocity at the center of
d. R= -100 the tube to ……..velocity at the surface of the wall.
CVD (Nasir) a) Decreased b) zero c) constant d) unchanged
13. The reaction occurs slowly because of the ….temperature and there is a surplus of
1. Chemical vapor deposition is a synthesis process in which the chemical constituents reactants at the surface since, because of the …pressure, the boundary layer is thin.
……in the vapor phase near or on a heated substrate to form a solid deposit.
a) Low, low b) high, high c) low, high d) high, low
a) Conjugate b) agglomerate c) react d) dispersed
14. At the high temperature and pressure the rate limiting step for the CVD deposition
2. Thermal activation which typically takes place at high temperatures that is…..
is…….?
a) 800 b) 850 c) 700 d) 900
a) Mass transport b) surface kinetics c) both a & b d) none
3. Plasma activation which typically takes place at much lower temperatures that 15. In CVD It is possible to switch from one rate-limiting step to the other by changing
is…… the………..
a) 900 b) 600-700 c) 700-900 d) 300-500 a) Pressure b) temperature c) flow of gas d) all a, b & c
16. Thickness of the deposit will ……..….as the distance from the tube inlet ……...
4. A CVD reaction is governed by ……….that is the driving force which indicates the
direction the reaction is going to proceed. a) Increases - by increases b) Increases – by decreases
c) decreases-by increases d) decreases-by decreases
a) Kinetics b) thermodynamics c) reaction d) deposition
5. ……. which defines the transport process and determines the rate-control 17. In epitaxy the structure of the substrate essentially controls the …….of the deposit.
mechanism.
a) Structure b) thickness c) uniformity d) non of the
a) Kinetics b) thermodynamics c) reaction d) deposition above
6. The free energy of formation is not …………value but varies as a function of 18. At ……temperatures, deposits tend to be columnar as a result of uninterrupted grain
several parameters which include the type of reactants, the molar ratio of these growth toward the reactant source.
reactants, the process temperature, and the process pressure.
a) Lower b) higher c) constant d) non of the above
a) variable b) Fixed c) changed d) constant
7. The reaction is heterogeneous which means that it involves a change of state, in this
Crystallography (Shahid_Senior)
case from………..
a) gaseous to solid b) solid to gaseous c) gaseous to liquid d) liquid to
(i) The structures of all crystals are described in terms of lattice with a group of ------
gaseous
----- each in a lattice point.
8. The reaction may take place before the substrate is reached while still in the gas
phase called…….. (a) Elctrons (b) Molecules (c) Atoms
(ii) The basis is repeated group of _____atoms in space to form the crystal structure.
a) pyrolysis b) condensation c) gas-phase precipitation d) redox
9. The laminar flow may be disturbed by convective ……….motion and may become (a) Atoms (b) Lattice (c) Crystals
turbulent.
(iii) The distance between any two successive lattice points along the x-direction is
a) Gas b) flow c) reactant d) tube taken as_____________
10. The ………..of the boundary layer, ∆, is inversely proportional to the square root of
the Reynolds number. (a) a (b) c (c) l
a) Uniformity b) thickness c) no uniformity d) all of the above (iv) The distance between any two successive lattice points along the __________is
11. The thickness of the boundary layer …….with lower gas-flow velocity and with taken as b.
………distance from the tube inlet. (a) x-direction (b) y-direction (c) z-direction
(v) The crystal structure is a combination of lattice and _____. 4. The intrinsic speed of rotary mechanical pump is given by Equation, Sp=-------.
(a) Atoms (b) basis (c) Molecules (A) Vofs (B) Vo/fs
(C) Vo-fs (D) Vo+fs
(vi) When X-rays strike a crystal they are diffracted only when the Bragg
equation_____ is satisfied. 5. For two-stage rotary mechanical pump the ultimate pressure achieves is ----.
(a) 2nλ=d sin θ (b) nλ=2sin θ (c) nλ=2d sin θ (A) 10^-2 (B) 10^-4
(C) 10^-6 (D) None
(vii) There are _____possible arrays of points repeated periodically in three-
6. Root pump require -------- oil for lubrication.
dimensional space such that the arrangement of points about any one point is
identical in every respect to the arrangement of points about any other point in the (A) Heavy oil (B) No oil
lattice. (C) Low viscosity oil (D) Thin oil
(a) 7 (b) 32 (c)14
(viii) Lattice is an imaginary, mathematical construct characterized by_____translations
and ______angles. 7. Typically ----- oil is used in Diffusion pump.
(a) Three, three (b) Four, three (c) Three, seven
(ix) There are only_____ways to arrange points in space having this property, and the (A) Benzene oil (B) Motor Oil
resulting point arrays are known as__________. (C) Grease oil (D) Silicone oil
(a) 32, lattice (b) 14, Bravais lattices (c) 7, Bravais lattices 8. The contamination of chamber due to oil is an important issue ---------.(T/F)
(x) The crystalline solids can be further subdivided according to one of 14 different
geometric arrays or lattices, depending on the placement of the_________.
(a) interplanar spacings (b) Angles (c) atoms 9. The ultimate pressure for turbo molecular pump is below -----------.
(xi) Actual crystal structures can be imagined to arise from a three-dimensional array (A) 10^-6 (B) 10^-12
of__________ geometrically and repetitively distributed in space such that each (C) 10^-9 (D) 10^-10
point has identical surroundings. 10. Cryopump works on the principle of -------- of molecule on the cool surface.
(a) Lattice (b) crystal (c) points (A) Evaporation (B) Sublimation
(xii) ________is the smallest repeating unit with all the symmetry of the entire crystal. (C) Condensation (D) None
11. The activated charcoal material is used for trapping gas molecules in ------- pump.
(a) Basis (b) Unit Cell (c) Lattice (A) Sputter ion (B) Cryopump
(C) Diffusion (D) None
(xiii) A __________is array of points, each of which are indistinguishable from other points 12. Of all high vacuum pumps Cryopump has highest pumping speed ------- (T/F).
and have identical surroundings. 13. " Electrons emitted from the cathode are trapped in applied transverse Magnetic
(a) Lattice (b) Symmetry (c) Crystal field of few thousand gauss". The statement is true for --------- pump.
(xiv) A __________is any object or combination of objects (atoms or molecules) that can be (A) Cryo (B) Sputter-ion
assigned to a lattice point. (C) Ti sublimation (D) None
(a) Plane (b) Atoms (c) basis 14. Ti sublimation pump has pumping action similar to ------ pump.
(A) Cryo (B) Sputter-ion
Pumps (Irfan_senior) (C) Diffusion (D) None
15. Single stage and two stage pumps are the type of --------- pump.
1. Rotary mechanical and root pump are important example of ---------- variety. (A) Root (B) Turbo molecular
(C) Rotary Mechanical (D) None
(A) Entrapment (B) Positive displacement
(C) Kinetic Vacuum pump (D) None
2. For rotary mechanical pump the maximum compression ratio is --------.
(A) 10^6 (B) 10^3
(C) 10^12 (D) 10^9
3. Oil is used as a sealant and as a lubricant in rotary mechanical pump.--------------
(T/F)
Assignment 1 Rearranging equation 2
2. Both Au, which is FCC, and W, which is body-centered cubic (BCC) have a
density of 19.3 g/cm3. Their respective atomic weights are 197.0 and 183.9
a. What is the lattice parameter of each metal? For BCC W
b. Assuming both contain hard sphere atoms, what is the ratio of their diameters?
Solution:
Density of Au = 19.3 g/cm3
Where R = radius of atoms
Density of W = 19.3 g/cm3
D = Diameter of atoms
Atomic weight of Au = AAu = 197.0
Rearranging equation 3
Atomic weight of W = AW = 183.9

a)

Where n = no. of atoms per unit cell
A = atomic weight Ratio of diameters =
VC = volume of unit cell
NA = avagadro’s number
ρ = density


3. a. Comment on the thermodynamic stability of a thin-film super lattice

composite consisting of alternating Si and Ge0.4Si0.6, film layers shown in Fig. 14-
17 given the Ge-Si phase diagram (Fig. 1-12).
For FCC Au b. Speculate on whether the composite is a single phase (because it is a single
n = 4, since there are four atoms per FCC unit cell crystal) or consists of two phases (because there are visible film interfaces).
4 197.0
6.779 10 !
Solution:
19.3 6.023 10
Since volume of cubic unit cell = VC = a3, where a is the lattice constant
"#$% & 6.779 10 !
' (. )** )+ ,- (. )+ Å
For BCC W
2 183.9
n = 2, since there are two atoms per BCC unit cell
3.164 10 !
19.3 6.023 10 a) Ge and Si are both completely soluble in each other in liquid as well in solid state.
"#$% & 3.164 10 !

Germanium and Silicon both have Diamond crystal structure. Also Ge0.4Si0.6 has same
0 1. 23 )+ ,- 1. 2 Å
Diamond crystal structure.
For Ge0.4Si0.6, variance is 1 since the phase diagram is at atmospheric pressure
f=n+1-Ψ
b) Assuming both contain hard sphere atoms
f = Degree of freedom
& 2√25 √26
3
For FCC Au
Ψ = no. of phases = 1
n = no. of components = 2
Where R = radius of atoms f=2+1–1=2
D = Diameter of atoms For Si which is a single component system in a P-V diagram
5.6537
AGJAG %8B C D 13.65;
2 3.264
f=n+2–Ψ
2AGJAG 27.30;
f = 1 + 2 – 1 = 2 , since both the number of phases and components is one.
Since the degree of freedom is same for Si and Ge0.4Si0.6, thus a thin-film super lattice
2AGJAG K 2AAFAG 27.30; K 27.25; 0.051;

So the peak separation is
composite consisting of alternating Si and Ge0.4Si0.6, film layers is thermodynamically
stable up to 1080 oC. Above this temperature the solid solution will be in two phase
5. The potential energy of interaction between atoms in an ionic solid as a
region and the degree of freedom will be reduced to 1. And above 1300 oC the Ge0.4Si0.6
function of separation distance is given by V(r) = -A/r + Br-n, where A, B, and n are
will completely melt and the composite will be degraded. constants.
b. The force constant between atoms is given by LM N3 O/NQ3|QS . If Young's

a. Derive a relation between the equilibrium lattice distance ao and A, B, and n.
b) Si and Ge0.4Si0.6 has a lattice mismatch of 92%, which is why they appear as two
interfaces in the TEM image, otherwise both have same Diamond crystal structure and elastic modulus (in units of force/area) is essentially given by Ks/ao, show that it
since the thin film is a single crystal, we believe the composite to be single phase. varies as ao-4 in ionic solids.
Solution:
A
4. Diffraction of 1.5406-Å X-rays from a crystallographically oriented (epitaxial) b:
VUrW K < Br [
Y
relaxed bilayer consisting of AlAs and GaAs yields two closely spaced overlapping
peaks. The peaks are due to the (111) reflections from both films. The lattice
parameters are ao(AlAs) = 5.6611 Å and ao(GaAs) = 5.6537 Å. What is the peak
dVUrW A
Derivation of equation 1 with respect to r gives
separation in degrees?
K nBr U[^BW
:Y Y
Solution:
λCuKα = 1.5406 Å
hkl = (111)
Derivation of equation 2 gives
d VUrW 2A
ao(AlAs) = 5.6611 Å
&; K < nUn < 1WBr U[^W
78 9 :
:Y Y
ao(GaAs) = 5.6537 Å
√# < = < >

Since
_` :/:Y |aSbc .
Where ao = lattice parameter
d = interplaner spacing
>%? @ 2:%8A
3 2A
_` K < nUn < 1WBrU[^W |aSbc
h,k anl are plane indices
Y
2A
Where λ = wavelength of Cu Kα
_` K < nUn < 1WB&; U[^W
&;
d = interplaner spacing
θ = bragg’s angle
_` 2A
K d < nUn < 1WB&; U[^W
n=1
@ &; &;
A %8B C D
2: Thus Ks/ao varies as ao-4 in ionic solids.
5.6611
For AlAs
: AFAG 3.27 Å
√1 < 1 < 1
8. A quartz (SiO2) crucible is used to contain Mg during thermal evaporation in an

effort to deposit Mg thin films. Is this a wise choice of crucible material? Why?
1.5406
AAFAG %8B C D 13.625;
2 3.27
Solution:
Figure above is the Ellingham Diagram which shows standard free energy of oxide
2AAFAG 27.25; formation vs. temperature: o represents melting point of metal; ⧠ represents boiling
point of metal (1 atm).
5.6537
For GaAs
: GJAG 3.264 Å
√1 < 1 < 1
hi
e KfU46gW> C √k6gD
Si + O2 SiO2; ΔGoSiO2
2Mg + O2 2MgO; ΔGoMgO hj
10Bo
Through elimination of O2 the reaction
e Kfl4U10 B WU3600Wm> n qkU10 B WU3600Wr

10p
2Mg + SiO2 2MgO + Si; ΔGo
Where ΔGo = ΔGoMgO - ΔGoSiO2
s9 9 e 5.142 10d !

Since the ΔGO-T curve shown in
t uv w, Nvxu M y z. (3 {-

Ellingham Diagram for MgO is more
negative or lower than that for SiO2, the
reaction is thermodynamically favored as
11. Measurements on the electrical resistivity of Au films reveal a three order of
written. Therefore Mg films tend to
magnitude reduction in the equilibrium vacancy concentration as the
reduce SiO2 films, leaving free Si behind. temperature drops from 600 to 300 oC.
a. What is the vacancy formation energy?
Thus during thermal evaporation of Mg
b. What fraction of sites will be vacant at 1080 oC?
K~
to deposit Mg thin films using Quartz Solution:
78 9 | 9e} C D
="
crucible is not a wise choice.
Where f vaccancy concentraton
E vaccancy creation energy
9. A solar cell is fabricated by diffusing phosphorous (N dopant) from a constant
surface source of 1020 atoms/cm3 into a P-type Si wafer containing 10l6 B
k = Boltzmann constant = 1.380 × 10-23 J/k
atoms/cm3. The diffusivity of phosphorous is 10-12 cm2/sec, and the diffusion time T = temperature in Kelvin
Part (a):
is 1 hour. How far from the surface is the junction depth-i.e., where CN = CP?
Given that
Solution: T1 = 600 oC = 873 K
3|UW |UW
Concentration of Boron atoms in P-type silicon = CP = 10l6 atoms/cm3 T2 = 300 oC = 573 K
Since at junction CP =CN = Concentration of Phosphorous at junction depth x = 10l6
|UW
atoms/cm3 Since there is a three order of magnitude reduction in vacancy concentration at 573 K
3
|UW
Concentration of phosphors at source surface = Ci= 1020 atoms/cm3
Diffusion coefficient = 10-12 cm2/sec
K~
Time = t = 1 hour = 3600 seconds
9e} C D
="B
Junction depth = x =?
3
K~
Since
9e} C D
="
K~
9e} C D
="B
Rearranging
> >3
K~
9e} C D
="
K~ K~
> 9e} C D K > 9e} C D >3
="B ="
K~ K~
C DKC D >3
="B ="
Assignment 2
K1 K1
~ nC DKC Dr >3
2. A 1-m3 cubical-shaped vacuum chamber contains O2 molecules at a pressure of
="B ="
10-4 atm at 300 K.
a. How many molecules are there in the chamber?
>3
~
b. What is the ratio of maximum potential energy to average kinetic energy of
1 1
these molecules?
n K r
=" ="B
c. What fraction of gas molecules has a kinetic energy in the x direction exceeding
RT? What fraction exceeds 2RT?
>3
Solution:
~
Given that:
1 1
n K r
Pressure of O2 molecules = 10-4 atm = 10.1325 Pa
1.380 10 573 1.380 10 873
Temperature = T = 300K
Molecular weight of Oxygen = 32 g/mol = 0.032 Kg/mol
1.0986
~
Volume of vacuum chamber = V = 1 m3
U1.265 10p K 8.30 10B W

a)
5"
Since we know that
1.0986
~
U4.34 10B W
Where R = gas constant = 8.314 m3 Pa K-1 mol-1

n = no. of moles = N/NA
~ 2.5276 10p 5"

N = no. of molecules

Since 1 eV = 1.602 × 10−19 J NA = Avogadro’s number = 6.023 × 1023 molecules/mol

~ 0.158 9 5"
U6.023 10 molecules molB WU10.1325 PaWU1 m W

U8.314 m Pa K B molB WU300 _W
2.446 10B!?>9 $>9%
Part (b):
T = 1080 OC = 1353 K b)
K~
|B 9e} C D
Average kinetic energy is calculated as follows
=" 35"

Mean square velocity is given as

¡
K2.528 10p 3 8.314 _ B!?>B 300 _
|UBW 9e} n r

233831.25 ! /%9
1.380 10 1353 0.032 _¢ !?>B
|UBW 0.258 1

_. ~ ¡
2
1 !
No. of moles of O2 = n = 0.00406 mol
_. ~ 0.00406 !?> 0.032 _¢ !?>B 233831.25 15.19 Joules
f is a unit less quantity since it is the fraction of vacancies present in the lattice.
2 %9
1
Total internal energy is calculated as
¤ | 5"
2
5
As degree of freedom for a diatomic gas = f = 5
¤ 0.00406 !?> C 8.314 ?$>9 !?>B _ B 300 _D 25.32 ?$>9%
2
¤ _. ~ < . ~
. ~ ¤ K _. ~
Temperature = T = 300K
. ~ 25.32 K 15.19
Taking Mach number 1 v f(v) at f(v) at f(v) at
. ~ 10.13 ?$>9%
vo at 300K = 347 m/s (m/sec) Mach-1 Mach
Mach-1.5 Mach-2
A =1.023 × 10-11 0 0 0 0
. ~ 10.13 2
Ratio of maximum potential energy to average kinetic energy of these molecules will be Taking Mach number 1.5 100 7.18 × 10-6 1.76 × 10 -6 3.40 × 10-7
0.66
_. ~ 15.19 3
vo at 300K = 520.76 m/s 200 7.22 × 10-5 2.17 × 10 -5 5.12 × 10-6
A = 4.93 × 10-12 300 2.73 × 10-4 1.00 × 10 -4 2.89 × 10-5
c) Taking Mach number 2 400 6.44 × 10-4 2.90 × 10 -4 1.02 × 10-4
1 1
Average kinetic energy of O2 molecules in x direction will be 1.11 × 10-3 6.15 × 10 -4 2.65 × 10-4
_. ~¥ ¡ ¥ 5"
vo at 300K = 694.34 m/s 500
2 2
A = 2.64 × 10-12 600 1.52 × 10-3 1.03 × 10 -3 5.42 × 10-4
A = constant of integration, 700 1.70 × 10-3 1.40 × 10 -3 9.06 × 10-4
_. ~¥ 5"
Kinetic energy of molecules in x direction with RT is Calculated from 800 1.59 × 10-3 1.61 × 10 -3 1.27 × 10-3
1
Plotting f(v) vs v: 900 1.26 × 10-3 1.60 × 10 -3 1.51 × 10-3
5"
Fraction of molecules with kinetic energy greater than RT is
_. ~¥
2
1000 8.60 × 10-4 1.30 × 10 -3 1.54 × 10-3
0.5
_. ~¥ 5"
1100 5.06 × 10-4 9.35 × 10 -4 1.35 × 10-3
1200 2.58 × 10-4 5.85 × 10 -4 1.04 × 10-3
Thus 50% of gas molecules will have average kinetic energy greater than RT in x 1300 1.15 × 10-4 3.19 × 10 -4 6.90 × 10-4
direction. 1400 4.49 × 10-5 1.52 × 10 -4 4.03 × 10-4
1
5"
Similarly fraction of molecules with kinetic energy greater than 2RT is
_. ~¥
1500 1.53 × 10-5 6.35 × 10 -5 2.06 × 10-4
2 0.25
4.60 × 10-6 2.33 × 10 -5 9.25 × 10-5
_. ~¥ 25"
1600
1700 1.22 × 10-6 7.54 × 10 -6 3.66 × 10-5
Thus 25% of gas molecules will have average kinetic energy greater than 2RT in x 1800 2.83 × 10-7 2.15 × 10 -6 1.27 × 10-5
direction. 1900 5.81 × 10-8 5.39 × 10 -7 3.92 × 10-6
2000 1.05 × 10-8 1.20 × 10 -7 1.06 × 10-6
¨U§ K §W3
4. Supersonic molecular beams have a velocity distribution given by 2100 1.69 × 10-9 2.34 × 10 -8 2.55 × 10-7
¦U§W '§1 vyx K
3©ª
Where vo, the stream velocity, is related to the Mach number.
a. What does a plot of f(v) vs. v look like?

¬U < 3W
b. What is the average gas speed in terms of vo, M, and T? Note:
!
18

« y3 v y Ny ; « y3^v y Ny ^
3 3
3 ^/3 3
16
) ) 14
Assume vo = 0.
Solution: 12
Mass of air = M = 28.966g/mol = 0.028966 Kg/mol
10
R = 8.314 J K-1 mol-1 Mach-1
10-4
Mach number = Velocity/Speed of sound = vo/a 8 Mach-1.5
Where, a = speed of sound is a function of temperature as
°5"
Mach-2
&f
6
f(v)
¡
4
1.4 8.3314 !?>B _ B "

&f
2
0.028966 _¢ !?>B
0
0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200
v; ¡ &
So v (m/s)
v; ¡ 20.044√"
This is plot of “f(v) vs v”, and have a bell shape plot.
Muhammad Khaliq U Rehman (2009-NUST-MS PhD-MS-E-06) Page 33 Muhammad Khaliq U Rehman (2009
(2009-NUST-MS PhD-MS-E-06) Page 34
elbows. Hence the overall conductance of this assembly will be higher as compared to
b) Let assume vo = 0 and A seems to be constant of integration and cancels out; one connected via sharp right-angle elbow section. Energy losses in sharp elbows are
¡UW
The gas we assume is air, and the temperature is 300K; so caused by the formation of a separation zone of low pressures called as eddies, which
|UW 9e} K
25"
appears just after the corner. Thus their conductance is lowered.
|UW 9e} K U4.35 10o WUW 8. A chamber is evacuated by two sorption pumps of identical pumping speed. In

² |UW: one configuration the pumps are attached in parallel so that both pump
Average v is given by; v p simultaneously. In the second configuration they pump in serial or sequential
²p |UW: order (one on and one off). Comment on the system pumping characteristics
|UW 9e} K U4.35 10o WUW (pressure vs. time) for both configurations.

« |UW: « 9e} K U4.35 10o WUW Solution:
p p Pumps in Parallel

When two or more pumps are arranged in parallel their flow rates ‘Q’ are added while
« |UW: « d 9e} K U4.35 10o WUW
p p
the pressure head remains the same. Their resulting performance curve is obtained by
adding their flow rates at the same head as indicated in the figure below.
« |UW: « UW 9e} K U4.35 10o WUW
p p
1
ΓU < W
Using the relation; « e µ exp UK&e W 2
p 2& µ^B/
1
ΓU2 < 2W

2U4.35 10o W^B/
5 5
It can be seen that with constant head the combined flow rate moves from 1 to 2.
Γ 2 Γ 2 Pumps in Serial

2U4.35 10o W/ 7.89 10Bd When two or more pumps are arranged in serial their pressure heads are added while
the flow rate ‘Q’ remains the same. Their resulting pump performance curve is obtained
Γ d √k 1.329 by adding their heads at same flow rate as indicated in the figure below.
1.329
U1.68 10B W

7.89 10Bd
« |UW: « 9e} K U4.35 10o WUW
p p

« |UW: « UBW^B 9e} K U4.35 10o WUW
p p

¹ ! It can be seen that with constant flow rate the combined head moves from 1 to 2.
¤%8¢ Y9>&g8?; « e µ^B 9 b¥ :e
2& µ^B
10. After evacuation of a chamber whose volume is 30 L to a pressure of 1 × 10-6
p
1! torr, the pumps are isolated. The pressure rises to 1 × 10-5 torr in 3 min.
a. What is the leakage rate?
2UK4.35 10o WB^B b. If a diffusion pump with an effective speed of 40 L/sec is attached to the
= A(2.64 × 1010) chamber, what ultimate pressure can be expected?
635.796 !/%9

² |UW: U1.68 10BW
AU2.64 × 10Bp W
v p
Solution:
²p |UW: Given that:
6. Two identical lengths of piping are to be joined by a curved 90o elbow section Volume of chamber = V = 30 L
or a sharp right-angle elbow section. Which overall assembly is expected to have a Pressure of chamber = P1 = 1 × 10-6 torr
higher conductance? Why? Pressure of chamber after pumps are isolated = P2 = 1 × 10-5 torr
Solution: Time taken = t = 3 min = 180 sec
Since conductance depends strongly on geometry. If two identical length pipes are a)
joined by a curved 90o elbow section, the flow will be laminar and no low pressure
eddies formation will take place. Curved elbows cause less energy losses than sharp
"
h 3.64f
¡
h 11.7 º/%9
Considering air at 298K, and A to be 1 cm2
» 11.7 º/%9 U1 10 g?YY K 1 10og?YYW

» 1.053 10d g?YY K º/%9
b)
7¼
Pump effective speed = S = 40 L/sec
7
7¼
1< h
7¼
40
7¼
1<
11.7
7¼ K16.53 º/%9
UgW K ; 7¼ g
Since
9e} K
j K ;
Rotary vane pump is used as fore pump, initially valve-3 is kept closed and after the
pressure is at reduced by the rotary vane pump to the level where turbomolecular
Here P(t) = 1 × 10-5 torr pump can operate. Valve-3 is then opened and valve-1 and 2 are closed so that oil
t = time = 180 sec contamination may not occur and vacuum is maintained by turbomolecular pump.
V = 30 L A vacuum gauge is used to measure the pressure in a vacuum. Most of the gauges are
Po = Ultimate pressure constructed with bourdon tubes to measure pressure and vacuum. The bourdon tube is
1 10 g?YY K ; 16.5 º/ sec 180 %9

Pi = 1 × 10-6 torr a hollow metallic tube sealed at one end, flexes when pressure is applied. As it tries to
9e} K
1 10o g?YY K ; 30 º
flex, this linear movement is changed to a rotational one by means of small gears. They
; 1 10 g?YY
in turn cause the pointer to indicate the measured pressure. Gauge pressure is zero
referenced against ambient air pressure, so it is equal to absolute pressure minus
Which is the ultimate pressure expected. atmospheric pressure. Negative signs are usually omitted.
13. In a tubular low-pressure chemical vapor deposition (LPCVD) reactor, gas is
11. Select any instrument or piece of equipment requiring high vacuum during introduced at one end at a rate of 75 torr-L/min. At the other end is a vacuum
operation (e.g., electron microscope, evaporator, Auger spectrometer, etc.). pump of speed Sp. If the reactor must operate at 1 torr, what value of Sp is
Sketch the layout of the vacuum-pumping components within the system. Explain required?
how the gauges that measure the system pressure work. Solution:
Solution: Given that:
MOCVD or Metal-Organic Chemical Vapour Deposition is one of thin film deposition Flow rate of gas = Q = 75 torr-L/min
process for depositing thin layers of atoms onto a semiconductor wafer. This process Pressure = 1 torr
requires a low pressure or high vacuum during operation. Layout of the vacuum- Pumping speed = SP =?
pumping components within the system is shown schematically below. Since
Which is the required speed of vacuum pump.
Assignment 3 Answer:: (Shahzad’s helped in solving this)
a) Evaporating a 15 wt% Ti-W W results in fractionation of alloy melts during evaporation, with
3.4: A molecular-beam epitaxy system contains separate A1 and As effusion evaporation subsequent loss of deposit stoichiometry, thus evaporating 15 wt% Ti-W
Ti W is not feasible as
sources of 4 cm2 area, located 10 cm from a (100) GaAs substrate. The A1 source is this particular alloy.
heated to 1000 oC, and the As source is heated to 300 oC. What is the growth rate of the
AlAs film in A/sec? [Note: AlAs basically has the same crystal structure and lattice keV Ar, the sputter yields are STi = 0.51 and SW = 0.57. The target surface
b) For 0.5-keV
parameter (5.661 A) as GaAs.] composition is altered in the steady state to C’Ti/C’W = 85(0.51)/15(0.57) = 5.09 which is
equivalent to 83.58% Ti and 16.42% W.
Answer:
Using figures 3.1 and 3.2 3.9: One way to deposit a thin metal film of known thickness is to heat an evaporation
Vapor pressure for Al = PAl = 3.02 × 10-5 torr source to dryness (i.e., until no metal remains in the crucible). Suppose it is desired to
Vapor pressure for As = PAs = 7.9 × 10-3 torr deposit 5000 A of Au on the internal spherical surface of a hemispherical shell
Target area = A = 4 cm2 measuring 30 cm in diameter. (a) Suggest two different evaporation source
Distance between source and substrate = l = 10 cm configurations (source type
type) (b) What weight of Au would be requirerequired for each
Temperature of Al source = TAl = 1273 K configuration, assuming
ing evaporation to dryness?
Temperature of As source = TAs = 573 K
Effusion rate is calculated separately for both Al and As using relation; Answer:
3.51× 1022 PA
Ŕ=
πl2(MT)1/2 Configuration # 1: The source
source-substrate
substrate geometry influences the ultimate film uniformity.
3.51× 1022 ×3.02 × 10-5× 4 Evaporation from a point
nt source is the simplest of situations to model. Consider evaporation
For Al; ŔAl =
π×102(27×1273)1/2 from the point source onto a parallel plane
plane-receiving
receiving substrate surface as indicated in the
ŔAl = 7.28 × 1013 atoms/cm2-sec figure below.
3.51× 1022 ×7.9 × 10-3× 4
For As; ŔAs =
π×102(75×573)1/2
ŔAs = 1.7 × 1016 atoms/cm2-sec
Al is the limiting case; AlAs has a zinc blend crystal structure containing 8 atoms per unit
cell. (100) will contain 2 atoms. Area of this plane is (5.661Å)2 = 3.2 × 10-15 cm2. So number
of atoms per cm2 of AlAs on (100) plane will be 2/3.2 × 10-15 = 6.25 × 1014 atoms/cm2.
Considerinf thickness of monolayer to be equivalent to lattice parameter of AlAs unit cell =
2.83 Å. Here the point source is Au and substrate is in the form of hemispherical
hemispherical shape. In order to
Growth rate will be given as find the weight of Au, lets us consider the following relation;
Growth rate Ŕ×thickness Me h
=
time total no. of atom per cm2 d=
4πρr3
----------------- (1)
Growth rate 7.28 × 1013 ×2.83 d = film thickness = 5000 × 10-10 m
=
time 6.25 × 1014 Me = total evaporated mass = ?
Growth rate ρ = 19300 kgm-3
= 0.33 A/sec
time r = 0.15m
h = 0.15 m
3.7: Alloy films of Ti-W, used as diffusion 5000 × 10-10 × 4πρ(0.15)3 = Me × 0.15
barriers in integrated circuits, are usually Me = 2.73 g
sputtered. The Ti-W, phase diagram
resembles that of Ge-Si (Fig. 1 - 13) at
elevated temperatures. (a) Comment on the Configuration # 2: The source
source-substrate
substrate geometry influences the ultimate film uniformity.
ease or feasibility of evaporating a 15 wt% Evaporation from a point source is the simplest of situations to model. Consider evaporation
Ti-W alloy. (b) During sputtering with 0.5- from the surface source onto a parallel plane
plane-receiving
receiving substrate surface as indicated in tthe
keV Ar, what composition will the target figure below.
surface assume in the steady state?
α = 0.15 ion/cm
γ = 0.1 electron/ion
100exp(0.15×10)
J=
1 - 0.1(exp(0.15×10) - 1)
J = 687.5 mA/cm2
Deposition rate = ?
ǐ = CJS = 222.6 ×687.5×10-3×2.85
ǐ = 436.16 A/min
3.12: At what sputter deposition rate of In on a Si substrate will the film melt within 1 min?
The melting point of In is 155 oC.
Here the surface source is Au and substrate is in the form of hemispherical shape. In order to
find the weight of Au, lets us consider the following relation; Answer:
Me h2
d= ----------------- (1) Density of silicon = ρ = 2.3 gcm-3
πρr4 Specific Heat Capacity = c = 0.7 j/g.oC
5000 × 10 × πρ(0.15) = Me × (0.15)2
-10 4
Effective thickness = d = 1 cm
Me = 0.68 g Indium is face centered tetragonal
a = 0.459 nm
3.10: Suppose the processes of electron impact ionization and secondary emission of electrons c = 0.495 nm volume = Vc = a2c,
by ions control the current J in a sputtering system according to the Townsend equation no. of atoms per unit cell = 4
(Ref. 19) J=
Joexp(αd) So Atomic condensate volume of In is:- Ω = 26 ×10-24 cm3/atom
1 - γ(exp(αd) - 1) Using the relation;
Where Jo = primary electron current density from external source; α = number of ions 2.67×10-29 × ǐ (∆Hc + Ek + Ep)t
T(t) =
per unit length produced by electrons; γ = number of secondary electrons emitted per ρcdΩ
incident ion; d = interelectrode spacing. Where ǐ = deposition rate;
a) If the film deposition rate during sputtering is proportional to the product of J and S, From table 3.5 for indium it is given that
calculate the proportionality constant for Cu in this system if the deposition rate is ∆Hc = 2.52 eV/atom
200A/min for 0.5-keV Ar ions. Assume α = 0.1 ion/cm, γ = 0.08 electron/ion, d = 10 cm, Ek = 4 eV/atom
and Jo = 100 mA/cm2. Ep = 2 eV/atom
b) What deposition rate can be expected for 1-keV Ar if α = 0.15 ion/cm and γ = 0.1 t = 1 minute = 60 sec
electron/ion. so; 6.49 × 10-21 = 1.36 × 10-26 ǐ
ǐ = 47549 A/min
Answer (a):
α = 0.1 ion/cm 3.13: During magnetron sputtering of Au at 1 keV, suppose there are two collisions with Ar
Jo = 100 mA/cm2 atoms prior to deposition. What is the energy of the depositing Au atoms? (Assume Ar
d = 10 cm is stationary in a collision.)
γ = 0.08 electron/ion
Using; Answer:
Joexp(αd) Atomic mass of Au = M1 = 196.97 g/mol
J=
1 - γ(exp(αd) - 1) Atomic mass of Ar = M2 = 39.95 g/mol
100exp(0.1×10) Energy of Au atoms = E1 = 1 keV = 1000eV
J= Energy of Ar after collision= E2 = ?
1 - 0.08(exp(0.1×10) - 1)
Using the relation;
J = 315.15 mA/cm2
E2 4M1M2
Since deposition rate ǐ = CJS where C is the constant of proportionality and S is sputter yield =
E1 (M1 +M2)2
and Where S for Cu with 0.5 keV Ar = 2.85; also ǐ = 200 Å /min
ǐ 200 For the first collision;
C= =
JS 315.15×10-3×2.85 4×196.97 × 39.95
E2 = × 1000eV
( 196.97 +39.95)2
C = 222.6 Åcm2/Amin
E2 = 561 eV
Answer (b):
The remaining energy of Au atoms = E1' = 1000 eV – 561 eV = 439 eV Answer (a):
Energy of Ar after second collision= E2' = ?
For the second collision; Assume that C = 1 and sputter yield S = 0.20 for Silver (Ag) with 0.5 He; and θ = 30o so our
E2' 4M1M2 equation becomes now; and U = 7 eV; and U = 11 eV
=
E1' (M1 +M2)2 E E
F (E, θ) = 1 × 0.2 × cos30 ; F (E, θ) = 1 × 0.2 × cos30
4×196.97 × 39.95 E+7)3
(E+7 E+11)3
(E+11
E2' = × 439eV
( 196.97 +39.95)2 E E
F (E, θ) = 0.1732 × ; F (E, θ) = 0.1732 ×
'
E2 = 246 eV E+7)3
(E+7 E+11)3
(E+11
U=7 U = 11
The remaining energy of Au atoms = 439 eV – 246 eV = 193 eV F (E, θ) E (eV) F (E, θ) E (eV)
0 0.00000 0 0.00000
3.14: For a new application it is desired to continuously coat a 1-m-wide steel strip with a 2- 1 0.00034 1 0.00010
µm-thick coating of Al. The x-y dimensions of the steel are such that an array of 2 0.00048 2 0.00016
3 0.00052 3 0.00019
electron-beam gun evaporators lies along the y direction and maintains a uniform 4 0.00052 4 0.00021
coating thickness across the strip width. How fast should the steel be fed in the x 5 0.00050 5 0.00021
direction past the surface sources, which can evaporate 20 g of A1 per second? Assume 6 0.00047 6 0.00021
that Eq. 3-18 holds for the coating thickness along the x direction, that the source-strip 7 0.00044 7 0.00021
distance is 30 cm, and that the steel sheet is essentially a horizontal substrate 40 cm long 8 0.00041 8 0.00020
on either side of the source before it is coiled. 9 0.00038 9 0.00019
10 0.00035 10 0.00019
11 0.00033 11 0.00018
Using the figure; 12 0.00030 12 0.00017
13 0.00028 13 0.00016
14 0.00026 14 0.00016
15 0.00024 15 0.00015
16 0.00023 16 0.00014
17 0.00021 17 0.00013
18 0.00020 18 0.00013
From the statement, it is clear that; h = 30 cm = 0.3 m
19 0.00019 19 0.00012
l = 40 cm = 0.4 m 20 0.00018 20 0.00012
d = 2 µm = 2 × 10-6 m
Me = total evaporated mass = ?
ρ = 2700 kgm-3
Me h 2
Using the relation; d=
πρ(h2 + l2)2
2 × 10-6 × πρ((0.3)2 + (0.4)2)2 = Me × 0.32
Me = 11.775 g
20 grams of aluminum can be evaporated in 1 sec
1 × 11.775
11.775 grams of aluminum can be evaporated in sec = 0.59 sec
20
total length 0.8 Answer (b):
Speed of steel by which is feed in = = = 1.36 m/s
time 0.59
From the graph it is evident that maximum in energy distribution occurs at about 3.5 eV and
3.16: Theory indicates that the kinetic energy (E) and angular spread of neutral atoms in the second graph 5.5 eV which means at E = U/2.
sputtered from a surface are given by the distribution function
E
F (E, θ) = CS θ
cosθ
(E+U)3
Where U = binding energy of surface atoms; C = constant; θ = angle between sputtered
atoms and the surface normal.
a) Sketch the dependence of f( E, θ) vs. E for two values of U.
b. Show that the maximum in the energy distribution occurs at E = U/2.

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MS 852 Advance Surface Coatings Final Term Examination (80% Paper)

DC-Sputtering & DC-glow discharge (M.Aamir Hassan)

1. The dc-sputtering is carried out at a pressure of ___________________

(a) Conducting polymers (b) Insulator materials only

9/3/2010 3. Argon gas is used as sputter gas in DC sputtering because __________________

4. In DC-sputtering of the ________ target, ion bombardment quickly builds up a

5. If the insulating target is used in DC-sputtering the glow-discharge will sustain

7. When the voltage is increased in DC glow discharge system, which of the

8. With charge multiplication in DC glow discharge, the current increases rapidly

9. If when enough of the electrons generated produce sufficient ions to

11. The operating domain for sputtering is _______________ regime.

Muhammad Khaliq U Rehman (2009-NUST-MS PhD-MS-E-06) Page 2

9. ‘RF’ stands for ________ in RF sputtering

RF Sputtering (FL. Asad Hameed)

(a) Straight a) charge exchange

Q # 1: According to kinetic theory of gases in an isolated sealed system, molecules certainly

4. Which of the following list of compounds is not sputtered in reactive sputtering

operational for (c)i and iii (d)all of the above

(d) Away,ground (a)ion plating (b)IBAD

SiH4(g) Si(s)+2H2(g) c. Electron Cylotron Resonance (ECR) CVD

5- Substrate temperature Influences ---------------------- of reaction.

b. Kinetics a. high electron emissivity

c. Both thermodynamics and kinetics b. low electron emissivity

d. Diffusion c. high insulation

a. Deposition temperature may be too high

a. True b. Deposition temperature may be too low

b. False c. Stoichiometry cannot be varied

b. Hot wall, parallel plate PECVD a. R< 100

b. R>100 a) Increases - by increases b) Increases – by decreases

Assignment 1 Rearranging equation 2

19.3  6.023  10

"#$% & 6.779  10 !

' (. )**  )+ ,- (. )+ Å

"#$% & 3.164  10 !

2AGJAG K 2AAFAG 27.30; K 27.25; 0.051;

b. The force constant between atoms is given by LM N3 O/NQ3|QS  . If Young's

√# < =  < >

e Kfl4U10 B WU3600Wm> n qkU10 B WU3600Wr

s9 9 e 5.142  10d !

t uv w , Nvxu M y z. (3 {-

U1.265  10p K 8.30  10B W

~ 2.5276  10p  5"

=" 35"

|UBW 0.258 1 

1.4  8.3314  !?>B _ B  "

» 11.7 º/%9 U1  10 g?YY K 1  10og?YYW

1  10 g?YY K ; 16.5 º/ sec  180 %9

Which is the required speed of vacuum pump.

Assignment 3 Answer:: (Shahzad’s helped in solving this)

Das könnte Ihnen auch gefallen

19.3 6.023 10

"#$% & 6.779 10 !

' (. )** )+ ,- (. )+ Å

"#$% & 3.164 10 !

b. The force constant between atoms is given by LM N3 O/NQ3|QS . If Young's

√# < = < >

e Kfl4U10 B WU3600Wm> n qkU10 B WU3600Wr

s9 9 e 5.142 10d !

t uv w, Nvxu M y z. (3 {-

U1.265 10p K 8.30 10B W

~ 2.5276 10p 5"

|UBW 0.258 1

1.4 8.3314 !?>B _ B "

» 11.7 º/%9 U1 10 g?YY K 1 10og?YYW

1 10 g?YY K ; 16.5 º/ sec 180 %9