SKiiP 30 NAB 12 MiniSKiiP 3

SEMIKRON integrated
Absolute Maximum Ratings intelligent Power
Symbol Conditions 1) Values Units SKiiP 30 NAB 12
Inverter (Chopper see SKiiP 22 NAB 12) 3-phase bridge rectifier +
VCES 1200 V braking chopper +
VGES ± 20 V 3-phase bridge inverter
IC Theatsink = 25 / 80 °C 33 / 22 A
ICM tp < 1 ms; Theatsink = 25 / 80 °C 66 / 44 A
IF = –IC Theatsink = 25 / 80 °C 38 / 26 A
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C 76 / 52 A
Case M3
Bridge Rectifier
VRRM 1500 V
ID Theatsink = 80 °C 35 A
IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C 700 A
I2t tp = 10 ms; sin. 180 °, Tj = 25 °C 2400 A2s
Tj – 40 . . . + 150 °C
Tstg – 40 . . . + 125 °C
Visol AC, 1 min. 2500 V

Characteristics
Symbol Conditions 1) min. typ. max. Units
IGBT - Inverter
VCEsat IC = 25 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V
td(on) VCC = 600 V; VGE = ± 15 V – 75 150 ns
tr IC = 25 A; Tj = 125 °C – 65 130 ns
td(off) Rgon = Rgoff = 47 Ω – 400 600 ns
tf inductive load – 50 100 ns
Eon + Eoff – 6,2 – mJ
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 1,65 – nF
Rthjh per IGBT – – 1,0 K/W UL recognized file no. E63532
IGBT - Chopper *
• specification of temperature
VCEsat IC = 15 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V sensor see part A
td(on) VCC = 600 V; VGE = ± 15 V – 55 110 ns • common characteristics B 16 – 4
tr IC = 15 A; Tj = 125 °C – 45 90 ns
td(off) Rgon = Rgoff = 82 Ω – 400 600 ns
tf inductive load – 70 100 ns Options
Eon + Eoff – 4,0 – mJ • also available with powerful
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 1,0 – nF chopper. For characteristics
Rthjh per IGBT – – 1,4 K/W please refer to Inverter IGBT
Diode 2) - Inverter (Diode 2) - Chopper see SKiiP 22 NAB 12)
VF = VEC IF = 25 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2,3) V 1)
Theatsink = 25 °C, unless
VTO Tj = 125 °C – 1,0 1,2 V otherwise specified
rT Tj = 125 °C – 32 44 mΩ 2)
CAL = Controlled Axial Lifetime
IRRM IF = 25 A, VR = – 600 V – 25 – A Technology (soft and fast
Qrr diF/dt = – 500 A/µs – 4,5 – µC recovery)
Eoff VGE = 0 V, Tj = 125 °C – 1,0 – mJ
Rthjh per diode – – 1,2 K/W
Diode - Rectifier
VF IF = 35 A, Tj = 25 °C – 1,2 – V
Rthjh per diode – – 1,6 K/W
Temperature Sensor
RTS T = 25 / 100 °C 1000 / 1670 Ω
Mechanical Data
M1 case to heatsink, SI Units 2 – 2,5 Nm
Case mechanical outline see page M3
B 16 – 9
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12
© by SEMIKRON 0698 B 16 – 55
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C

30NA1203.xls 30NA1204.xls-3
10 8
Tj = 125 °C Tj = 125 °C
mWs mWs
VCE = 600 V VCE = 600 V
8 VGE = ± 15 V VGE = ± 15 V
Eon
RG = 47 Ω 6
Eon IC = 25 A
6

4
Eoff Eoff

2
2
E E

0 0
0 IC 10 20 30 40 A 50 0 RG 30 60 90 Ω 120

Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)

ICpuls = 25 A VGE = 0 V
f = 1 MHz

Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. V CE

B 16 – 56 0698 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC
Mini1207
1.2
Tj = 150 °C
VGE = ≥ 15 V
1.0

0.8

0.6

0.4

0.2

0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC Mini1209 ICsc/ICN Mini1210
2,5
Tj = ≤ 150 °C 12
Tj = ≤ 150 °C
VGE = ± 15 V VGE = ± 15 V
10
tsc = ≤ 10 µs
2 Lext < 25 nH

8
1,5 Note:
*Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4

0,5
2

0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]

Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT

Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode

B 16 – 4 0698 © by SEMIKRON
MiniSKiiP 3

SKiiP 30 NAB 06 Circuit

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SKiiP 30 NAB 12 customer’s printed circuit board
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