IS

L9
V
30
40
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / D
ISL9V3040S3 3
S
EcoSPARK® 300mJ, 400V, N-Channel Ignition IGBT
/
General Description Formerly Developmental Type 49362 IS
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer Applications L9
outstanding SCIS capability in the space saving D-Pak (TO-252),
as well as the industry standard D²-Pak (TO-263), and TO-262 and • Automotive Ignition Coil Driver Circuits V
TO- 220 plastic packages. This device is intended for use in • Coil- On Plug Applications
automotive ignition circuits, specifically as a coil driver. Internal 30
diodes provide voltage clamping without the need for external Features
components. 40
• Space saving D-Pak package availability
EcoSPARK® devices can be custom made to specific clamp
• SCIS Energy = 300mJ at TJ = 25oC S
voltages. Contact your nearest On Semiconductor sales office for
more information.
• Logic Level Gate Drive
3
Package Symbol S
JEDEC TO-
263AB
JEDEC TO-220AB /
E
D²-Pak CG
IS
G
COLLECTOR L9
E V
R1 30
GATE
JEDEC TO-252AA JEDEC TO-262AA 40
D-Pak E R2
CG
P
G EMITTER 3/
E
IS
COLLECTOR
(FLANGE)

Device Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 430 V
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V
ESCIS25 At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ
ESCIS150 At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ
IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 21 A
IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A
VGEM Gate to Emitter Voltage Continuous ±10 V
PD Power Dissipation Total TC = 25°C 150 W
Power Dissipation Derating TC > 25°C 1.0 W/°C
TJ Operating Junction Temperature Range -40 to 175 °C
TSTG Storage Junction Temperature Range -40 to 175 °C
TL Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV

©2013 Semiconductor Components Industries, LLC.

October-2017, Rev. 3 Publication Order Number:
ISL9V3040P3/D
Package Marking and Ordering Information IS
Device Marking Device Package Reel Size Tape Width Quantity L9
V3040D ISL9V3040D3ST TO-252AA 330mm 16mm 2500
V3040S ISL9V3040S3ST TO-263AB 330mm 24mm 800
V
V3040P ISL9V3040P3 TO-220AB Tube N/A 50 30
V3040S
V3040D
ISL9V3040S3
ISL9V3040D3S
TO-262AA
TO-252AA
Tube
Tube
N/A
N/A
50
75
40
V3040S ISL9V3040S3S TO-263AB Tube N/A 50 D
Electrical Characteristics TA = 25°C unless otherwise noted 3
Symbol Parameter Test Conditions Min Typ Max Units S
Off State Characteristics /
BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1K See Fig. 15
370 400 430 V
IS
TJ = -40 to 150°C L9
BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
RG = 0 See Fig. 15
390 420 450 V
V
TJ = -40 to 150°C 30
BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, 30 - - V
TC = 25°C 40
BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V S
ICER Collector to Emitter Leakage Current VCER = 250V, TC = 25°C
RG = 1K TC = 150°C
-
-
-
-
25
1
µA
mA
3
See Fig. 11 S
IECS Emitter to Collector Leakage Current VEC = 24V, See TC = 25°C - - 1 mA
Fig. 11 TC = 150°C - - 40 mA
/
R1 Series Gate Resistance - 70 -  IS
R2 Gate to Emitter Resistance 10K - 26K 
L9
On State Characteristics V
VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, TC = 25°C, - 1.25 1.60 V
VGE = 4V See Fig. 3 30
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, TC = 150°C, - 1.58 1.80 V 40
VGE = 4.5V See Fig. 4
VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, TC = 150°C - 1.90 2.20 V P
VGE = 4.5V 3/
Dynamic Characteristics IS
QG(ON) Gate Charge IC = 10A, VCE = 12V, - 17 - nC
VGE = 5V, See Fig. 14
VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, TC = 25°C 1.3 - 2.2 V
VCE = VGE, TC = 150°C 0.75 - 1.8 V
See Fig. 10
VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V - 3.0 - V
Switching Characteristics
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1 - 0.7 4 µs
trR Current Rise Time-Resistive VGE = 5V, RG = 1K - 2.1 7 µs
TJ = 25°C, See Fig. 12
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy - 4.8 15 µs
tfL Current Fall Time-Inductive VGE = 5V, RG = 1K - 2.8 15 µs
TJ = 25°C, See Fig. 12
SCIS Self Clamped Inductive Switching TJ = 25°C, L = 3.0 mHy, - - 300 mJ
RG = 1K VGE = 5V, See
Fig. 1 & 2

Thermal Characteristics
RJC Thermal Resistance Junction-Case All packages - - 1.0 °C/W

www.onsemi.com
2
Typical Performance Curves IS
30 30
L9
RG = 1k, VGE = 5V,Vdd = 14V V
ISCIS, INDUCTIVE SWITCHING CURRENT (A)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

RG = 1k, VGE = 5V,Vdd = 14V
25 25 30
20 20
40
D
15
TJ = 25°C
15 3
TJ = 150°C TJ = 25°C
10
10
S
TJ = 150°C
/
5
SCIS Curves valid for Vclamp Voltages of <430V
5
SCIS Curves valid for Vclamp Voltages of <430V
IS
0 0 L9
0 25 50 75 100 125 150 175 200 0 2 4 6 8 10

tCLP, TIME IN CLAMP (µS) L, INDUCTANCE (mHy)

V
Figure 1. Self Clamped Inductive Switching Figure 2. Self Clamped Inductive Switching
30
Current vs Time in Clamp Current vs Inductance 40
1.30
S
1.8
3
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE = 6A VGE = 3.7V ICE = 10A

1.26
VGE = 4.0V 1.7 S
1.6
VGE = 3.7V
VGE = 4.0V
/
1.22
IS
1.5
L9
1.18
VGE = 4.5 V
V = 5.0V
1.4 V
VGE = 4.5V
VGE = 8.0V
GE
VGE = 5.0V 30
1.3

1.14
VGE = 8.0V 40
-75 -50 -25 0 25 50 75 100 125 150 175
1.2
-75 -50 -25 25 50 75 100 125 15 175
P
0
0
3/
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) IS
Figure 3. Collector to Emitter On-State Voltage Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature vs Junction Temperature

25
VGE = 8.0V 25
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE = 8.0V
VGE = 5.0V
VGE = 5.0V
20 VGE = 4.5V 20 VGE = 4.5V
VGE = 4.0V
VGE = 4.0V
VGE = 3.7V
15 VGE = 3.7V
15

10 10

5
5

TJ = - 40°C TJ = 25°C
0
0
0 1.0
2.0 3.0 4.0 0 1.0 2.0 3.0 4.0
vs Collector Current
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage

 VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 6. Collector to Emitter On-State Voltage

vs Collector Current
Typical Performance Curves (Continued) IS
25
L9
VGE = 8.0V 25
V
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

DUTY CYCLE < 0.5%, VCE = 5V
VGE = 5.0V PULSE DURATION = 250µs
20 VGE = 4.5V 20
30
VGE = 4.0V
40
VGE = 3.7V
15
15 D
TJ = 150°C 3
10 10
TJ = 25°C
S
5 5
/
TJ = -40°C
IS
TJ = 175°C
0 0 L9
0 1.0 2.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
Figure 7. Collector to Emitter On-State Voltage
VGE, GATE TO EMITTER VOLTAGE (V) 30
vs Collector Current Figure 8. Transfer Characteristics 40
25 S
2.2
VGE = 4.0V VCE = VGE 3
ICE, DC COLLECTOR CURRENT (A)

20 2.0
ICE = 1mA
S
VTH, THRESHOLD VOLTAGE (V)

15 1.8
/
IS
10
1.6
L9
1.4 V
5
1.2
30
40
0
25 50
1.0 P
75 100 125 150 175 -50 -25 25 50 75 100 125 150 175
3/
0
IS
TC, CASE TEMPERATURE (°C)
TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature Figure 10. Threshold Voltage vs Junction
Temperature

10000 12
VECS = 24V ICE = 6.5A, VGE = 5V, RG = 1K

Resistive tOFF
1000 10
LEAKAGE CURRENT (µA)

Inductive tOFF
SWITCHING TIME (µS)

100 8

10 6

1 VCE S = 300 V 4
VCES = 250V Resistive tON

0.1
2
-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C) Figure 11. Leakage Current vs Junction

Temperature
 TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Switching Time vs Junction

Temperature
Typical Performance Curves (Continued) IS
1600
L9
FREQUENCY = 1 MHz
8
IG(REF) = 1mA, RL = 1.25 TJ = 25°C V
7
30

VGE, GATE TO EMITTER VOLTAGE (V)

1200
6
40
C, CAPACITANCE (pF)

CIES
5
VCE = 12V D
800
4
3
3
S
CRES
400
2
VCE = 6V
/
COES
1 IS
0
0
L9
0 5 10
15 20 25 0 4 8 12 16 20 24 28 32
V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC) 30
Figure 13. Capacitance vs Collector to Emitter
Voltage Figure 14. Gate Charge 40
S
3
430
ICER = 10mA

S
BVCER, BREAKDOWN VOLTAGE (V)

425

420
TJ = - 40°C /
415 TJ = 175°C
TJ = 25°C
IS
410
L9
405
V
400
30
395
40
390
10 100 1000 2000 3000 P
RG, SERIES GATE RESISTANCE (k)
3/
Figure 15. Breakdown Voltage vs Series Gate Resistance IS
ZthJC, NORMALIZED THERMAL RESPONSE

100 0.5

0.2
0.1
10-1 0.05
t1
0.02
PD
0.01
t2
10-2

DUTY FACTOR, D = t1 / t2
=
PE A KT (P
SI NGL E PU L S E J D X ZJC X RJC) + TC

10-3
10-6 10-5 10-4 10-3 10-2 10-1

T1, RECTANGULAR PULSE DURATION (s)

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

Test Circuit and Waveforms IS
L9
V
L
VCE
30
R
or
L
LOAD 40
C
D
RG
C 3
G
PULSE
GEN DUT RG = 1K
G + V CE
S
DUT

5V -
/
E
E IS
L9
V
Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit 30
40
S
VCE BVCES 3
tP
VCE
S
L
IAS
/
C
VARY tP TO OBTAIN
REQUIRED PEAK IAS RG
+
VDD
IS
VDD
L9
G
VGE DUT - V
30
E
tP
0V
40
IAS 0.01
0
P
tAV
3/
IS
Figure 19. Energy Test Circuit Figure 20. Energy Waveforms

SPICE Thermal Model

REV 7 March 2002

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / th JUNCTION

ISL9V3040S3
ISL9V3040S3 =1.1e -1
CTHERM1 th 6 2.1e -3 templa ctherm.ctherm6 2 tl =
CTHERM2 6 5 1.4e -1 te 6.2e +6
CTHERM3 5 4 7.3e -3 therma
CTHERM4 4 3 2.1e -1 l_mod rtherm.rtherm1 th 6 =
CTHERM5 3 2 1.1e -1 el th tl 1.2e -1
CTHERM6 2 tl 6.2e +6 therma rtherm.rtherm2 6 5 =
l_c th, 1.9e -1
RTHERM1 th 6 1.2e -1 tl rtherm.rtherm3 5 4 =
RTHERM2 6 5 1.9e -1 { 2.2e -1
RTHERM3 5 4 2.2e -1 ctherm.ctherm1 th rtherm.rtherm4 4 3 =
RTHERM4 4 3 6.0e -2 6 = 2.1e -3 6.0e -2
RTHERM5 3 2 5.8e -2 ctherm.ctherm2 6 5 rtherm.rtherm5 3 2 =
RTHERM6 2 tl 1.6e -3 = 1.4e -1 5.8e -2
ctherm.ctherm3 5 4 rtherm.rtherm6 2 tl =
= 7.3e -3
SABER Thermal Model ctherm.ctherm4 4 3
1.6e -3
}
SABER thermal model = 2.2e -1
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ctherm.ctherm5 3 2
 RTHERM5
IS
L9
RTHERM1
2
CTHERM1 V
30
6 40
D
RTHERM2 CTHERM2
3
S
5
/
IS
RTHERM3 CTHERM3
L9
V
30
4

40
RTHERM4 CTHERM4
S
3
3
S
CTHERM5
/
IS
RTHERM6 CTHERM6 L9
V
30
40
tl CASE P
3/
IS
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number o
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: ON Semiconductor Website: www.onsemi.com
N. American Technical Support: 800−282−9855 Toll
Literature Distribution Center for ON Semiconductor Free USA/Canada
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free Phone: 421 33 790 2910
USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free For additional information, please contact your local
Japan Customer Focus Center
USA/Canada Email: orderlit@onsemi.com Sales Representative
Phone: 81−3−5817−1050
  Semiconductor Components Industries, LLC
www.onsemi.com