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1. Background
4. Conclusion
Schottky
BJT/HBT
MOSCAP
CJ/Co
1
Low
frequency For insulated devices,
consider only majority carrier
junction capacitance CJ
High
frequency
VG
Alam ECE-606 S09 4
Junction Capacitance
dQG d (−QS )
VG + υ S sin ωt CG ≡ =
dVG dVG
QS
+ V=
G ψS −
~ CO
-
dVG dψ S 1
p-Si = +
d ( −QS ) d ( −QS ) CO
1 1 1
= +
CG CS CO
1 1 1
VG = +
CG CS CO
CO
d ( −QS )
CS ≡
CS dψ S
QS (ψ S )
which we already
understand!
Alam ECE-606 S09 6
Definition of m for later use
m= (1 + CS CO ) VG
in practice:
CO VG
1.1 ≤ m ≤ 1.4 ψS = VG ≡
CO + CS m
1. Background
4. Conclusion
+Q
C/Co
Wacc Low frequency
1
+Q
-Q
=
C j , dep =
C0Cs C0 +Q
C0 + Cs 1 + C0 Cs
VG
C0 Co -Q
= =
κ oε 0 κ sε 0 V
1+ 1+ G
x0 W Vδ
qN AW qN AW 2 C/Co
VG x0 + Low frequency
κ oε 0 2κ ε
s 0 1
κo W VG
= 1+ −1
κ s x0 Vδ
VG
Alam ECE-606 S09 10
Junction capacitance in inversion
κ sε 0
C j , inv ≈ ≡ C0
x0
VG
CoCinv κ sε 0
= C j ,inv Cinv ≡
Co + Cinv Winv
VG’ >VT’
C/Co
Low frequency
1
+Q Exposed
Acceptors
-Q
Electrons
VG
Alam ECE-606 S09 11
Equivalent Oxide Thickness
Low frequency
Qi = −CG (VG − VT ) 1
CoCinv C/Cox
=
CG C= < Co
Cinv + Co
j , inv
κ oε o κ sε o
Co = Cinv ≡ VG
x0 Winv
κ oxε O κ oxε O
CG = EOTelec =
xO + Winv > xO
κ sε O
EOTelec
κ sε 0
C j , inv ≈ ≡ C0
x0 C/Co
1
ΔQ
High frequency
WT
VTH VG
-ΔQ
VG VG VG
VG’ >VT’
σ np − ni2 − ni
τ= = R →
κ s ε0 τn ( p + p1 ) + τ p (n + n1 ) τn + τ p
ΔQ ΔQ
WT WT
-ΔQ -ΔQ
C/Co
1
Low frequency
High frequency
C/Co C/Co
Threshold voltage …
1. Background
4. Conclusion
Schottky
BJT/HBT
MOS
NA
NA
C0Cs C0 -ΔQ x0 -ΔQ
=
C j , dep =
C0 + Cs 1 + κ ox W
κ s x0
Co
= Low frequency
V
1+ G
Vδ C/Co
(even beyond threshold)
High frequency
VG
19
Relaxation from Deep Depletion
1 Low frequency
NA
NA
-ΔQ -ΔQ -ΔQ
x0 x0
20
Ideal vs. Real C-V Characteristics
Flat band voltage …
C/Co C/Co
VG VG
Threshold voltage …
n+-Si n+-Si
ni
G=
2τ
p-Si
p-Si
typically observe hi- typically observe low-frequency CV
frequency CV No deep-depletion as well