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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 27: Introduction to Bipolar Transistors
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
 Background
E B C

E C

Base!

Point contact Germanium transistor (your HW problem!)

Ralph Bray from Purdue missed the invention of transistors
Ralph Bray from Purdue missed the invention of transistors.
Transistor research was also in advanced stages in Europe (radar).  
2
 Shockley’s Bipolar Transistors … 

n++
Double p base
n‐collector
Diffused BJT n+

n+ p n n+
emitter base collector

Alam  ECE‐606 S09
Modern Bipolar Junction Transistors (BJTs)
Base Emitter Collector
N+
N‐
N
P+ N+
N
SiGe intrinsic base Dielectric  trench
P‐

Transistor speed increases

as the electron's travel
distance is reduced
SiGe Layer

Alam  ECE‐606 S09 4
 Symbols and Convention
E Symbols
Poly emitter
Poly emitter NPN PNP
N+
Collector Collector
B P Low‐doped base
p
Base Base
N
Collector doping
optimization
Emitter Emitter
C

IC+IB+IE=0
VEB+VBC+VCE=0
Alam  ECE‐606 S09 5
Outline

1)) Equilibrium and forward band‐diagram 
q g
2) Currents in bipolar junction transistors
3) Eber
Eber’ss Moll model
Moll model
4) Conclusions

Alam  ECE‐606 S09 6
Topic Map

Equilibrium DC Small 
Small Large 
Large Circuits
signal Signal
Diode

Schottky

BJT/HBT

MOS

Alam  ECE‐606 S09 7
 Band Diagram at Equilibrium

∇ • D = q ( p − n + N D+ − N A− ) Equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q

J N = qqnμ N E + qqDN ∇n DC  dn/dt=0

/
Small signal dn/dt ~ jωtn 
∂p 1 Transient ‐‐‐ Charge control model
= − ∇ • J P − rP + g P
∂t q
J P = qp μ P E − qDP ∇p

Alam  ECE‐606 S09 8
 Band Diagram at Equilibrium 

Emitter Base Collector

Vacuum  χ2
level
χ1 χ3
EC
EF

EV

Alam  ECE‐606 S09 9
 Electrostatics in Equilibrium
2 k sε 0 NE 2 k sε 0 NC
x p , BE = Vbi x p , BC = Vbi
q NB ( NE + NB ) q N B ( NC + N B )

2 k sε 0 NB
xn , E = Vbi 2k sε 0 NB
q NE ( NB + NE ) xn ,C = Vbi
q NC ( NC + N B )

Emitter Base Collector

Alam  ECE‐606 S09 10
Outline

1) Equilibrium and forward band‐diagram 
2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Conclusions

Alam  ECE‐606 S09 11
Topic Map

Equilibrium DC Small 
Small Large 
Large Circuits
signal Signal
Diode

Schottky

BJT/HBT

MOS

Alam  ECE‐606 S09 12
 Band Diagram with Bias 

∇ • D = q ( p − n + N D+ − N A− ) Non‐equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q

J N = qqnμ N E + qqDN ∇n DC  dn/dt=0

/
Small signal dn/dt ~ jωtn 
∂p 1 Transient ‐‐‐ Charge control model
= ∇ • J P − rP + g P
∂t q
J P = qp μ P E − qDP ∇p

Alam  ECE‐606 S09 13
 Electrostatics in Equilibrium
2k sε 0 NE 2k sε 0 NC
x p , BE = (Vbi − VEB ) x p , BC = (Vbi − VCB )
q NB ( NE + NB ) q N B ( NC + N B )

2 k sε 0 NB 2 k sε 0
xn , E = (Vbi − VEB ) xn , C =
NB
(Vbi − VCB )
q NE ( NB + NE ) q NC ( NC + N B )

Emitter Base Collector

VEB
VCB

14
Current flow with Bias

EC‐Fn,E
V
Fp,B‐EEV
EC‐Fn,C

Alam  ECE‐606 S09 15
Coordinates and Convention

Emitter Base Collector

N+ P N

X’’
X X X’
X
0 W

N E = N D, E N B = N A, B N C = N A, C
DE = DP DB = DN DC = DN
nE 0 = n p 0 pB 0 = pn 0 nC 0 = nn 0

Alam  ECE‐606 S09 16
Carrier Distribution in Base 
⎛ x ⎞ ⎛ x ⎞
Δn( x) = Ax + B = C ⎜1 − ⎟ + D⎜ ⎟
C ⎝ WB ⎠ ⎝ B⎠
W D
ni2,B ⎛ ⎞ ni2,B qVBC β ⎛ x ⎞
Δn( x) = (e qVBE β
− 1) ⎜1 −
x
⎟ + (e − 1)⎜ ⎟
NB ⎝ WB ⎠ N B ⎝ B⎠
W

ni2, B
Δn(0+ ) =
NB
( eqVBE β − 1) Δn( x = WB ) =
ni2, B
(e qVBC β
)
−1
NB

VEB
VCB

Alam  ECE‐606 S09 17
Collector and Emitter Electron Current 
ni2, B ⎛ x ⎞ ni , B qVBC β
2
⎛ x ⎞
Δn( x) = ( e qVBE β
− 1) ⎜1 − ⎟+ ( e )
−1 ⎜ ⎟
NB ⎝ W B ⎠ N B ⎝ B⎠
W
2 2

J n,C = qDn
dn
dx WB
=−
WB N B
(
qDn ni , B qVBE β
e − 1) +
WB N B
e (
qDn ni , B qVBC β
−1 )

VBE
VBE
dp
J p , E = − qD p
dx
D p ni2 qVBE β
=−
Wn N D
( e − 1)
Alam  ECE‐606 S09 18
Current‐Voltage Characteristics
2 2

Normal, Active Region J n,C =−
WB N B
(
qDn ni , B qVBE β
e − 1) +
WB N B
(
qDn ni , B qVBC β
e )
−1
EB: Forward biased
EB:  Forward biased
BC:  Reverse biased
JC log10 JC High‐level injection
g j
series resistance, etc.

IB

> 60 mV/dec.
60 V/d
VBE
VCE

Have you seen this figure before? 19

Outline

1)) Equilibrium and forward band‐diagram 
q g
2) Currents in bipolar junction transistors
3) Ebers Moll model
Ebers Moll model
4) Conclusions

Alam  ECE‐606 S09 20
 Ebers Moll Model  Hole diffusion in collector

2
⎡ qDn ni2, B qDp ni2,C ⎤ qVBC β
IC = − A
WB N B
(
qDn ni , B qVBE β
e − 1) + A ⎢ + ⎥ e ( −1 )
⎣ WB N B WC NC ⎦
( )
≡ α F I F 0 ( eqVBE β − 1) − I R 0 eqVBC β − 1 IC=IIc,n+IIc,p

IF IR
E C IE=IE,n+IE,p

IC
I F = I F 0 ( e qVBE β − 1)
IE
α RI R αF IF
B IB
(
I R = I R 0 e qVBC β − 1 )
⎡ qD p ni2, E qDn ni2, B ⎤ qVBE β 2

IE = − A ⎢ + ⎥ (e − 1) + A (
qDn ni , B qVBC β
e −1 )
⎣ WE N E WB N B ⎦ WE N B

(
≡ I F 0 ( e qVBE β − 1) − α R I R 0 e qVBC β − 1 )
21
Common Base Configuration

IF IR

E C E C
VEB IE N P N IC VCB α RI R αF IF
(out) IE IC
(in)
B B B
CBE CBC
IB

How would the model change if this was a Schottky barrier BJT? 

Alam  ECE‐606 S09 22
 Common Emitter Configuration

E
Cμ
IE
C

CBE α RIR IF
P IC IR
B IB
VEC
N
(out) B Cπ αF IF − αRIR
VEB P+ IB αF IF
(i )
(in)
βF
E E CBC α FIF IR

αF IF αF IF
IC = = (1 − α F ) I F = I B
βF α F
1 − αF
This
h is a practice problem
bl …

Alam  ECE‐606 S09 23
Conclusion

• The physics of BJT is most easily understood with 
reference to the physics of junction diodes
reference to the physics of junction diodes. 
• The equations can be encapsulated in simple 
equivalent circuit appropriate for dc, ac, and large 
g pp
signal applications. 
• Design of transistors is far more complicated than 
thi i l
this simple model suggests.
d l t
• For a terrific and interesting history of invention of 
bipolar transistor, read the book “Crystal Fire”. 
Alam  ECE‐606 S09 24