TMP7N65AZ(G)/TMPF7N65AZ(G)

Features N-channel MOSFET

 Low gate charge
BVDSS ID RDS(on)
 100% avalanche tested
 Improved dv/dt capability 650V 6.5A <1.4W
 RoHS compliant
 Halogen free package
 JEDEC Qualification
 Improved ESD performance

Device Package Marking Remark

TMP7N65AZ / TMPF7N65AZ TO-220 / TO-220F TMP7N65AZ / TMPF7N65AZ RoHS
TMP7N65AZG / TMPF7N65AZG TO-220 / TO-220F TMP7N65AZG / TMPF7N65AZG Halogen Free

Absolute Maximum Ratings

Parameter Symbol TMP7N65AZ(G) TMPF7N65AZ(G) Unit
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGS ±30 V
TC = 25 ℃ 6.5 6.5 * A
Continuous Drain Current ID
TC = 100 ℃ 3.7 3.7 * A
Pulsed Drain Current (Note 1) IDM 26 26 * A
Single Pulse Avalanche Energy (Note 2) EAS 390 mJ
Repetitive Avalanche Current (Note 1) IAR 6.5 A
Repetitive Avalanche Energy (Note 1) EAR 12 mJ
TC = 25 ℃ 120 39 W
Power Dissipation PD
Derate above 25 ℃ 0.96 0.31 W/℃
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 ℃
Maximum lead temperature for soldering purposes,
TL 300 ℃
1/8” from case for 5 seconds
* Limited only by maximum junction temperature

Thermal Characteristics
Parameter Symbol TMP7N65AZ(G) TMPF7N65AZ(G) Unit
Maximum Thermal resistance, Junction-to-Case RqJC 1.04 3.2 ℃/W
Maximum Thermal resistance, Junction-to-Ambient RqJA 62.5 62.5 ℃/W

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 TMP7N65AZ(G)/TMPF7N65AZ(G)

Electrical Characteristics : TC=25℃, unless otherwise noted

Parameter Symbol Test condition Min Typ Max Units

OFF
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 650 -- -- V
VDS = 650 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current IDSS
VDS = 520 V, TC = 125°C -- -- 10 µA
Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA
Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA

ON
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 -- 5 V
Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 3.25 A -- 1.2 1.4 W
(Note 4)
Forward Transconductance gFS VDS = 30 V, ID = 3.25 A -- 10 -- S

DYNAMIC
Input Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 1072 -- pF
Output Capacitance Coss f = 1.0 MHz -- 103 -- pF
Reverse Transfer Capacitance Crss -- 12 -- pF

SWITCHING
Turn-On Delay Time (Note 4,5) td(on) VDD = 325 V, ID = 6.5 A, -- 35 -- ns
(Note 4,5)
Turn-On Rise Time tr RG = 25 Ω -- 46 -- ns
(Note 4,5)
Turn-Off Delay Time td(off) -- 82 -- ns
Turn-Off Fall Time (Note 4,5) tf -- 27 -- ns
(Note 4,5)
Total Gate Charge Qg VDS = 520V, ID = 6.5 A, -- 22 -- nC
(Note 4,5)
Gate-Source Charge Qgs VGS = 10 V -- 5 -- nC
(Note 4,5)
Gate-Drain Charge Qgd -- 10 -- nC

SOURCE DRAIN DIODE

Maximum Continuous Drain-Source
IS ---- -- -- 6.5 A
Diode Forward Current
Maximum Pulsed Drain-Source
ISM ---- -- -- 26 A
Diode Forward Current
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.5 A -- -- 1.5 V
(Note 4)
Reverse Recovery Time trr VGS = 0 V, IS = 6.5 A -- 345 -- ns
(Note 4)
Reverse Recovery Charge Qrr dIF / dt = 100 A/µs -- 2.6 -- µC

Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=17.1mH, I AS = 6.5A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃
3 I SD ≤ 6.5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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 TMP7N65AZ(G)/TMPF7N65AZ(G)

16
VDS = 30V
Top VGS=15.0V 250 μs Pulse Test
10.0V
9.0V 10
12 8.0V
7.0V
150℃

Drain Current, ID [A]

6.0V
Drain Current, ID [A]

Bottom 5.5V

8 25℃
-55℃
1

1. TC = 25℃
2. 250μs Pulse Test
0 0.1
0 5 10 15 20 2 4 6 8 10
Drain-Source Voltage, VDS [V] Gate-Source Voltage, VGS [V]

2.0 30
VGS = 0V
TJ = 25℃
250μs Pulse Test
Reverse Drain Current, IDR [A]

25
Drain-Source On-Resistance

1.5 VGS = 10V 20

RDS(ON) [Ω]

150℃ 25℃
15
VGS = 20V

1.0 10

0.5 0
0 2 4 6 8 10 12 14 0.0 0.5 1.0 1.5 2.0
Drain Current,ID [A] Source-Drain Voltage, VSD [V]

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
ID = 6.5A
VDS = 325V
Crss = Cgd 10
Gate-Source Voltage, VGS [V]

1500 VGS = 0 V VDS = 130V

f = 1 MHz
Ciss 8
Capacitance [pF]

VDS = 520V
1000 6
Coss

500
Crss
2

0 0
10
-1
10
0
10
1 0 5 10 15 20 25
Drain-Source Voltage, VDS [V] Total Gate Charge, QG [nC]

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 TMP7N65AZ(G)/TMPF7N65AZ(G)

1.20 3.0
VGS = 10 V
VGS = 0 V ID = 3.25 A
1.15
Drain-Source Breakdown Voltage

ID = 250 μA 2.5

Drain-Source On-Resistance
1.10
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0
1.05

1.00 1.5

0.95
1.0

0.90

0.5
0.85

0.80 0.0
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
o o
Junction Temperature,TJ [ C] Junction Temperature, TJ [ C]

7 1.5

6
Gate Threshold Voltage

5
Drain Current, ID [A]

VTH, (Normalized)

1.0

0.5
2

1 VDS = VGS
ID = 250  A

0 0.0
25 50 75 100 125 150 -80 -40 0 40 80 120 160
Case Temperature, TC [℃] Junction Temperature, TJ [ C]
o

TMP7N65AZ(G) TMPF7N65AZ(G)
2 2
10 10
Operation in This Area Operation in This Area
is Limited by R DS(on) is Limited by R DS(on)
10 us 10 us
100 us 100 us
1 1
10 1 ms 10
1 ms
Drain Current, ID [A]

Drain Current, ID [A]

10 ms 10 ms
100 ms 100 ms
0 0
10 DC 10
DC

o
-1 -1
TC = 25 C
10 10 o
TJ = 150 C
o
TC = 25 C Single Pulse
o
TJ = 150 C
Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10
Drain-Source Voltage, VDS [V] Drain-Source Voltage, VDS [V]

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 TMP7N65AZ(G)/TMPF7N65AZ(G)

TMP7N65AZ(G)

0
10
Duty=0.5
Transient thermal impedance

0.2

0.1
ZthJC(t)

-1
10 0.05 PDM
t
0.02
T
0.01
Duty = t/T
ZthJC(t) = 1.04 ℃/W Max.
-2
10 single pulse

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Pulse Width, t [sec]

TMPF7N65AZ(G)

Duty=0.5
0
10
Transient thermal impedance

0.2

0.1

0.05
ZthJC(t)

-1
0.02
10 PDM
t
0.01
T

single pulse Duty = t/T

ZthJC(t) = 3.2℃/W Max.
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Pulse Width, t [sec]

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 TMP7N65AZ(G)/TMPF7N65AZ(G)

TO-220AB-3L MECHANICAL DATA

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 TMP7N65AZ(G)/TMPF7N65AZ(G)

TO-220F-3L MECHANICAL DATA

INCHES MILLIMETERS
SYMBOL NOTES
MIN MAX MIN MAX
A 0.178 0.194 4.53 4.93
b 0.028 0.036 0.71 0.91
C 0.018 0.024 0.45 0.60
D 0.617 0.633 15.67 16.07
E 0.392 0.408 9.96 10.36
e 0.100 TYP. 2.54TYP.
H1 0.256 0.272 6.50 6.90
J1 0.101 0.117 2.56 2.96
L 0.503 0.519 12.78 13.18
φQ 0.117 0.133 2.98 3.38
b1 0.045 0.055 1.15 1.39
L1 0.114 0.130 2.9 3.3
Q1 0.122 0.138 3.10 3.50
F 0.092 0.108 2.34 2.74

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