University of Engineering and Technology, Lahore Spring 2014

LAB 6: BIPOLAR JUNCTION TRANSISTOR BIASING

Name : Date :
Regd-No :
OBJECTIVES:
 To understand the importance of transistor biasing
 To implement the base biasing scheme for BJT
 To implement the voltage divider bias scheme for BJT

SUGGESTED READING:
 Class Lectures 9, 10
 Chapter 7: “Bipolar Junction Transistors”, introductory Electronic Devices and
Circuits by Robert T. Paynter.
 Datasheet : BC337 NPN Bipolar Junction Transistor
 Datasheet: 2N3904 NPN bipolar Junction Transistor
 http://www.allaboutcircuits.com/vol_3/chpt_4/10.html
 http://www.badeclasses.com/Study%20Materials%5CEDC%2001.pdf
 http://www.zen22142.zen.co.uk/Design/bjtbias.htm

Please read through all the suggested reading before you come to lab.

EQUIPMENT AND COMPONENTS:

 Basic Circuits Training Board
 2N3904 Transistor
 Jumper Wires
 Palm Scope / DMM
 Resistors
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Transistors as Amplifiers:
Transistors are non-linear three terminal semi-conductor devices used to amplify a
current or voltage signal. Transistor amplifiers are grouped into one of three basic
circuit configurations depending on which transistor element is common to input
and output signal circuits.
1. Common Base
2. Common Emitter
3. Common Collector

MCT-137: ELECTRONIC DEVICES AND CIRCUITS

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Department of Mechatronics and Control Engineering, U.E.T
Lahore LAB 6
 University of Engineering and Technology, Lahore Spring 2014
Each circuit configuration has its own characteristics and, therefore, its own
applications.

BJT Biasing
A bias circuit allows the operating conditions of a transistor to be defined, so that it
will operate over a pre-determined range. This is normally achieved by applying a
small fixed dc voltage to the input terminals of a transistor. The Quiscent Point (Q-
point) refers to the DC conditions of the circuit with the presence of any input. The
term Quiscent means ‘at-rest’. If the Q-point of the circuit lies mid-way on the load
line, the circuit is said to be mid-point biased [Fig 5.1].
There are many ways to bias a BJT circuit. Today’s objective is to work with two
most basic circuits, known as:
 Fixed Bias
 Voltage Divider Bias

Fig 5.1: BJT Characteristic Curve and Load Line

MCT-137: ELECTRONIC DEVICES AND CIRCUITS

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Department of Mechatronics and Control Engineering, U.E.T
Lahore LAB 6
 University of Engineering and Technology, Lahore Spring 2014

Lab Tasks:
Two circuits, one fixed biased, and one voltage divider biased will be provided to
you during the lab. Check the transistor datasheet to find the pinout description for
the transistor provided.

Fixed Bias:
A fixed biased circuit is characterized by a fixed resistance RB connecting to the
voltage supply input, and no emitter resistance. [Fig. 5.2]
The analysis of fixed bias circuit requires finding the base current, and then
the corresponding collector current by using the value of DC gain β.

The components and values used for the experiment are: Fig 5.2: Fixed Bias Circuit
1. VCC =__________
2. RC =__________
3. RB =__________
4. Transistor = ________
5. hfe =_______

TASK 1: Calculate the Q-point of the circuit and plot the load line using MS
EXCEL.

MCT-137: ELECTRONIC DEVICES AND CIRCUITS

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Department of Mechatronics and Control Engineering, U.E.T
Lahore LAB 6
 University of Engineering and Technology, Lahore Spring 2014
TASK 2: Measure the values of collector current (IC) and emitter-collector
voltage (VCE), and plot the measured load line.

TASK 3: Heat the transistor by holding it in your hand. Note the change in the
collector and record the Q-point shift by measuring the change in the collector
current. Also provide the two values ‘β’ for two different Q-points.

Voltage Divider Bias:

A voltage divider bias is characterized by a voltage divider
attached at the base of the transistor, and the addition of an
emitter resistance [Fig. 5.3]. The analysis of the voltage
divider bias circuit requires finding the base voltage, the
corresponding emitter voltage and the collector current.

Fig 5.3: Voltage divider bias

The components and values

used for the experiment are:
1. VCC =__________
2. R1 =__________
3. R2 =__________

MCT-137: ELECTRONIC DEVICES AND CIRCUITS

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Department of Mechatronics and Control Engineering, U.E.T
Lahore LAB 6
 University of Engineering and Technology, Lahore Spring 2014
4. RC =__________
5. RE =__________
6. Transistor = ________
7. hfe =_______

TASK 4: Calculate the Q-point of the circuit and plot the load line using MS
EXCEL.

TASK 5: Measure the values of collector current (IC) and emitter-collector

voltage (VCE), and plot the measured load line.

TASK 6: Suggest how you would bias the circuit at the mid-point.

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Department of Mechatronics and Control Engineering, U.E.T
Lahore LAB 6
 University of Engineering and Technology, Lahore Spring 2014

REVIEW QUESTIONS:
Q: Compare the fixed and the voltage divider bias. Which one would better suit an
application of amplifying a small signal?
Ans:

Q: Write any two advantages of the fixed bias circuit over the voltage divider bias.
Ans:

Q: Why is biasing important?

Ans:

Q: Why do we require our transistor to be mid-point biased?

Ans:

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Department of Mechatronics and Control Engineering, U.E.T
Lahore LAB 6
 University of Engineering and Technology, Lahore Spring 2014

Bonus Question: Suppose you have three transistors, with the typical values of
gain given as:
β1 = 400, β2 = 300, β3 = 200.
Explain logically which one you would use as a ‘switch’, when max IC (sat) = 350
mA, and max IB allowed is 10μA. Also describe the best way to bias the switch.

Bonus Question 2: Show the step-by-step calculations for the load line (calculated
values).

COMMENTS:
P.S: Comments are logical observations and findings that you learned during your
practical.

MCT-137: ELECTRONIC DEVICES AND CIRCUITS

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Department of Mechatronics and Control Engineering, U.E.T
Lahore LAB 6