Literature Review

There has been numerous works related to the field of transistor parameters and their
extraction techniques throughout the years. Here some works will be reviewed which were
executed on bipolar transistors and on their parameters.

In work [1] authors presented a method which helped achieve microwave equivalent-circuit
values for an HBT or heterojunction bipolar transistor. One of the most noticeable traits here is
that it helps o differentiate the parasitic emitter resistance and junction resistance. No test
patterns are required and the method might also be applicable to homojunction transistors.

Direct methods of extraction of parameters have always been time efficient and one of them is
demonstrated in work [2] by authors which is of hybrid T equivalent circuits for heterojunction
bipolar transistors. This method doesn’t include any test structures neither numerical
optimization techniques. Moreover, all circuit parameters are measured in an analytical way
utilizing small signal parameters. Its mentioned that the extractions are carried out under
biased conditions. The transistors have an operating range of frequency which is exhibited by
this method. Thus, making the process frequency independent and helps to extract parameters
for improved modelling.

Another direct extraction method is presented in the paper [3]. Here, the authors first
mentioned a technique for determining the equivalent circuit of an HBT. The y-parameter data
(which are DC embedded from the known parasitic) here are utilized to evaluate the intrinsic
circuit elements. The extracted circuit parameters are independent of frequency and helps to
model HBT-s parameters over a wide range of collector currents.

Work [4] discusses a parameter extraction for Mextram. Authors combined geometric scaling
with their technique to produce a good set of high-current parameters for bipolar transistors.
Statistical method is also later discussed shortly in the paper. The technique is then
implemented in the program IC-CAP of Agilent.

Paper [5] shows an extraction technique of parameters for advanced polysilicon emitter bipolar
transistors. The following method uses an unusual way by predetermining the equivalent circuit
parameters by analytical expressions of de-embedded Z-parameters. These values are used as
the initial values for the parameter extraction process and optimization was definitely
executed. This method helps to determine an equivalent circuit which shows excellent
relevance from .1 to 26.5 GHz with the measured S parameters.

Authors presented a compact model for bipolar transistors in work [6]. This model is adequate
for the network analysis of computer programs. Junction voltage, collector current and base
charge are linked here using a new charge control relation. The performance of the bipolar
transistor model exceeds the performance of existing transistors having the same amount of
complexities in their structure.

Work [7] proposes an equivalent circuit which is physical yet simple in nature for a
heterojunction bipolar transistor. The physical operation of an HBT was analyzed in details for
producing this circuit. Under both passive and biased conditions, comparison was done
between the simulated and physical S and Z-parameters for the verification of the model. The
parasitic elements, specially the parasitic capacitances were evaluated through a direct
extraction technique here. The simulated and measure results were satisfyingly relevant
between the frequencies of .25 and 75 GHz.

Insulated gate bipolar transistors or IGBTs are used in many fields in order to regulate DC
voltage. Their failure can cause system failure along with a huge lack in efficiency. Work [8]
discusses about a method which can predict and avert failures by identifying the failure
precursor parameters which helps to build prognostics methodology. threshold voltage,
transconductance, and collector-emitter (ON) voltage, three potential precursor parameter
candidates were measured for an aged and new IGBT respectively. These three parameter
values change with temperature indicated the degradation of the transistors. Based on that a
methodology was introduced to validate these three precursor parameters.

A model generator for a custom statistical bipolar transistor is presented in the work [9]. The
model generator is automated and developed for a rectangular bipolar device containing
arbitrary and non-symmetrical separations of regions which are rectangular in shape and are
established around the emitter perimeter. A distributed network representing a three-
dimensional transistor configuration is used for the determination of parameters for the
equivalent circuit generated by the MG. The elements of the network are of simple parameters
derived from two-dimensional process and simulations of the device. The output equivalent
circuit is used along other models of transistors for the statistical analysis.

Another extraction technique is presented in work [10] for the small signal equivalent circuit
model of InP/GaInAs heterojunction bipolar transistors. Both extrinsic base collector
capacitance and extrinsic base resistance are included in the derived equivalent circuit. The
technique makes it apparent that some of the elements were uniquely calculated while some
were estimated.

Base resistance is always dependent on the current and voltage applied to a transistor or
device. Authors of paper [11] demonstrated the significant effect of impact-ionization on this
dependency and also presented a dc method for the extraction of all parasitic resistances of a
bipolar transistor in a simultaneous manner. The collector parasitic resistance is measure in the
active region.
A combined approach which combines both analytical and empirical optimization procedure,
might also be labeled as a semi-analytical approach is presented in paper [12] for the
parameter extraction of a heterojunction bipolar transistor. Extrinsic base collector capacitance
and pad parasitics extraction technique is also included. HBTs cutoff operation was utilized to
evaluate the pad parasitics. The measured and simulated S-parameters from the frequency
range 50MHz to 36GHz are almost equal.

Another direct yet improved extraction technique for heterojunction bipolar transistor (SiGe)
for the vertical bipolar intercompany type hybrid model is presented in work [13]. Analytical
approach is used for the extraction of equivalent circuit elements using S-parameter data alone
and also without the use of any kind of numerical optimization. The technique presented
emphasized on correcting the pad de-embedding error for an exact and non-persisted
extraction of intrinsic base resistance (R/sub bi/), formulating a new parasitic substrate
network, and improving the extraction procedure of transconductance (g/sub m/), dynamic
base-emitter resistance (r/sub /spl pi//), and base-emitter capacitance (C/sub /spl pi//) using
the accurately extracted R/sub bi/. As any kind of de-embedding errors are eliminated the
parameters extracted are reliable and also frequency independent.

Paper [14] represents an insulated gate bipolar transistor which is really easy to implement on
SPICEII. Here experimental results using data book or terminal characteristic are the way to
extract IGBT model parameters. Parameters extracted which are derived through the model
help the simulation of both a steady state and a dynamic state model of IGBT.

A large-signal model of heterojunction bipolar transistors adequate for DC, small signal and
large signal operation of AC is represented in the work [15]. Numerous characteristics of this
model distinguish it from the orthodox models like Ebers-Moll or Gummel-poon BJT
representations. An uncomplicated yet decent extraction procedure accompanies the model
which consists only a queue of DC and multi bias point small-signal S-parameter measurements.
Two different manufacturers experimented the model by independently power-sweeping and
hence declaring its validation.