EE 524: Nanoelectronics Devices

Assignment No.3
Due Date: 08-04-2019, During Class Total Marks: 100

Problem # 1:
This problem concerns an MOS capacitor that consists of a metal electrode, a 2 nm thick
silicon dioxide layer with Kox =3.9, and a silicon substrate (Ks =11.8) that begins at x=0. The
electric field in the semiconductor is shown below. Assume that there is no charge at the
oxide-Si interface, and no charge in the oxide.

Answer the following questions.

1a) What is the surface potential, ? (Assume that the potential is zero deep in the
semiconductor.
1b) What is the doping density in the semiconductor?

Problem # 2:
Consider the above problem and answer the following questions.

c) What is the electric field in the oxide?

d) What is the voltage drop across the oxide?
e) What is the electrostatic potential in the metal gate (VMetal )?
Problem # 3:
The energy band diagram of an ideal MOS capacitor operated at T=300K with non-zero gate
potential. At Si-Oxide interface Ef=Ei and oxide thickness (x0) is 100nm.

i. Sketch the electrostatic potential (Φ) inside the semiconductor as a function of position.
ii. Roughly sketch the electric field (ξ) inside the oxide and semiconductor as a function of
position.
iii. Do equilibrium conditions prevail inside the semiconductor? Explain.
iv. Roughly sketch the electron concentration versus position inside the semiconductor.
v. What is the electron concentration at Si-SiO2 interface?
vi. Calculate NA.

vii. Calculate ΦS.

viii. Calculate VG.

Problem # 4:
Consider a MOS capacitor with a gate oxide thickness of 1.2 nm. The Si substrate doping of
NA=1018/cm3. The gate voltage is selected so that the sheet density of electrons in the inversion
layer is ns =1013/cm2. Assume room temperature.

Answer the following questions.

 i. What is the surface potential? Compare it with 2ѰF.
ii. How much does the surface potential need to increase to double the inversion layer
density?
iii. How much does the gate voltage need to increase to double the inversion layer density?
iv. Explain in words why it is difficult to increase the surface potential for an MOS
capacitor above threshold.

Problem # 5:
Draw the following graphs and properly label it.
a) Mobile charge vs surface potential
b) Subthreshold charge vs gate voltage
c) Mobile charge vs gate voltage