EE 524: Nanoelectronics Devices

Solution Assignment No.3

Total Marks: 100

Problem # 1:
This problem concerns an MOS capacitor that consists of a metal electrode, a 2 nm thick
silicon dioxide layer with Kox =3.9, and a silicon substrate (Ks =11.8) that begins at x=0. The
electric field in the semiconductor is shown below. Assume that there is no charge at the
oxide-Si interface, and no charge in the oxide.

Answer the following questions.

Problem # 2:
Consider the above problem and answer the following questions.
Problem # 3:
The energy band diagram of an ideal MOS capacitor operated at T=300K with non-zero gate
potential. At Si-Oxide interface Ef=Ei and oxide thickness (x0) is 100nm.
 Problem # 4:
Consider a MOS capacitor with a gate oxide thickness of 1.2 nm. The Si substrate doping of
NA=1018/cm3. The gate voltage is selected so that the sheet density of electrons in the inversion
layer is ns =1013/cm2. Assume room temperature.
Solution:
Problem # 5:
Draw the following graphs and properly label it.
a) Mobile charge vs surface potential
b) Subthreshold charge vs gate voltage

c) Mobile charge vs gate voltage