EXPERIMENT 01:

N-CHANNEL MOSFET OUTPUT AND TRANSFER CHARACTERISTICS

AIM: To study transfer and output characteristics of an n-channel Metal Oxide Semiconductor field
effect Transistor (MOSFET) in Common-source configuration.

APPARATUS: MOSFET (IRFZ44n), Bread board, resistor (1KΩ), connecting wires, Ammeters ( 0‐25mA),
DC power supply (0‐30V) and multimeter.

THEORY: The MOSFET is actually a four-terminal device, whose substrate, or body terminal must be
always held at one of the extreme voltage in the circuit, either the most positive for the PMOS or the
most negative for the NMOS. One unique property of the MOSFET is that the gate draws no measurable
current.

IRFZ44N: IRF-Z44N basically belongs to the family of Metal Oxide Semiconductor Field
Effect Transistor(MOSFET). It is a power MOSFET. There are two types of MOSFET i.e. N-channel and P-
channel. IRF-Z44N belongs to the N-channel family. It has very low on state resistance. It has zener
diode which provides ESD protection up to 2 kilo-volt. It is a low cost device and provides higher
efficiency. Dc current rating is 49A.
PROCEDURE:

OUTPUT/DRAIN CHARACTERISTICS: 1. Connect the circuit as per given diagram properly.

2. Keep VGS constant at some value say 2 V by varying VGG

3. Vary VDS in step of 1V up to 15 volts and measure the drain current ID. Tabulate all the readings.

4. Repeat the above procedure for VGS as 3V, 4V, 5V, 8V,10v etc

TRANSFER CHARACTERISTICS: 1. Connect the circuit as per given diagram properly.

2. Set the voltage VDS constant at 10 V.

3. Vary VGS by varying VGG in the step of 1 up to 15V and note down value of drain current ID. Tabulate
all the readings.

4. Plot the output characteristics VDS vs ID and transfer characteristics VGS vs ID.

OBSERVATION TABLE:

OUTPUT / DRAIN CHARACTERISTICS

VGS=2V VGS=3V VGS=4V VGS=5V VGS=6V VGS=8V

VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)
0 0 0 0 0 0
1 1 1 1 1 1
2 2 2 2 2 2
: : : : : :
: : : : : :
15 15 15 15 15 15

TRANSFER CHARACTERISTICS:

VDS=10V
VGS(V) ID(mA)
0
1
2
3
:
10

Precaution: MOSFET devices are ESD sensitive (electrostatic sensitive) and can easily be destroyed by
handling – be sure to discharge or ground yourself before handling these sensitive devices.