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N-Channel MOSFET
Features { 2. Drain
Symbol
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge (Typical 9.5nC) ●
General Description
TO-220F
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
1 2 3
Thermal Characteristics
Value
Symbol Parameter Units
Min. Typ. Max.
RθJC Thermal Resistance, Junction-to-Case - - 5.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 55mH, IAS =2.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 2.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
0
10 6.0 V
5.5 V
ID, Drain Current [A]
www.DataSheet4U.com 10
-1
o
25 C
o
※ Notes : -55 C ※ Notes :
1. 250µs Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250µs Pulse Test
-2 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10
18
15
Drain-Source On-Resistance
VGS = 10V
12
RDS(ON) [Ω ],
VGS = 20V 0
10
9
6 150℃ 25℃
※ Notes :
3 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µs Pulse Test
-1
0 10
0 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4
600 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 120V
10
VGS, Gate-Source Voltage [V]
VDS = 300V
400 Ciss 8
Capacitance [pF]
VDS = 480V
6
Coss
200 4
※ Notes :
1. VGS = 0 V
Crss 2
2. f = 1 MHz
※ Note : ID = 2.0 A
0 0
-1 0 1 0 2 4 6 8 10
10 10 10
1.2 3.0
Drain-Source Breakdown Voltage
2.5
Drain-Source On-Resistance
1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)
2.0
1.0 1.5
www.DataSheet4U.com 1.0
0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 µA 0.5 1. VGS = 10 V
2. ID = 1.0 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
2.0
Operation in This Area
1 is Limited by R DS(on)
10
1.6
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
1 ms
0 10 ms 1.2
10
DC
0.8
-1
10
※ Notes :
o
0.4
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
10
-2
0.0
0
10 10
1
10
2 3
10 25 50 75 100 125 150
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
0 D = 0 .5
10
Zθ JC(t), Thermal Response
※ N o te s :
1 . Z θ J C (t) = 2 .3 2 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
0 .2 3 . T J M - T C = P D M * Z θ J C (t)
0 .1
0 .0 5
-1
10
0 .0 2 PDM
0 .0 1
t1
s in g le p u ls e
t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
www.DataSheet4U.com V
V DS
GS Qgs Qgd
DUT
3mA
Charge
R
L V
DS
V
DS 9
0%
V V
DD
GS
R
G
1
0%
V
GS
1
0V D
UT
t
d(o
n) t
r t
d(o
ff) t
f
to
n to
ff
L 1 B V DS S
V E
AS=---- L S -
IA2 -
------------------
DS 2 B V DS S -V DD
B
VDSS
ID
IA
S
R
G
V
DD ID(t)
1
0V D
UT V
DD V
DS(t)
tp
tp T
ime
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
V DS
www.DataSheet4U.com
_
I SD
L
D r iv e r
R G
S am e T ype
as DUT V DD
V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t
V SD
V DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
Package Dimensions
TO-220F
3.30 ±0.10
6.68 ±0.20
15.87 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47
9.75 ±0.30
0.80 ±0.10
(3
0°
)
#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20
9.40 ±0.20