AP9916H/J

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ Low on-resistance D BVDSS 18V

▼ Capable of 2.5V gate drive RDS(ON) 25mΩ
▼ Low drive current ID 35A
G
▼ Single Drive Requirement
S

Description

The Advanced Power MOSFETs from APEC provide the G

D
S TO-252(H)
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 18 V
VGS Gate-Source Voltage ± 12 V
ID@TC=25℃ Continuous Drain Current, VGS @ 4.5V 35 A
ID@TC=125℃ Continuous Drain Current, VGS @ 4.5V 16 A
1
IDM Pulsed Drain Current 90 A
PD@TC=25℃ Total Power Dissipation 50 W
Linear Derating Factor 0.4 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Thermal Resistance Junction-case Max. 2.5 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W

Data and specifications subject to change without notice 200227032

AP9916H/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 18 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 25 mΩ
VGS=2.5V, ID=5.2A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1 V
gfs Forward Transconductance VDS=10V, ID=6A - 18 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=18V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=125 C) VDS=18V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ± 12V - - ±100 nA
2
Qg Total Gate Charge ID=18A - 17.5 - nC
Qgs Gate-Source Charge VDS=18V - 1.2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 7.9 - nC
2
td(on) Turn-on Delay Time VDS=10V - 7.3 - ns
tr Rise Time ID=18A - 98 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 25.6 - ns
tf Fall Time RD=0.56Ω - 98 - ns
Ciss Input Capacitance VGS=0V - 527 - pF
Coss Output Capacitance VDS=18V - 258 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 112 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 35 A
1
ISM Pulsed Source Current ( Body Diode ) - - 90 A
2
VSD Forward On Voltage Tj=25℃, IS=35A, VGS=0V - - 1.3 V

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
 AP9916H/J

100 80

T C =25 o C 70
T C =150 o C V G =4.5V
V G =4.5V
80
60

V G =3.5V

ID , Drain Current (A)

ID , Drain Current (A)

V G =3.5V
50
60

40

V G =2.5V V G =2.5V
40
30

20
20

V G =1.5V
10
V G =1.5V

0
0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8
V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.8
30

I D= 6 A I D =6A
1.6
28 o V G =4.5V
T C =25 C

1.4
Normalized R DS(ON)

26
RDS(ON) (mΩ )

1.2
24

1.0
22

0.8
20

0.6
18
1 2 3 4 5 6 -50 0 50 100 150
V GS (V)
T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
AP9916H/J

40 60

35
50

30
ID , Drain Current (A)

40
25

PD (W)
20 30

15

20

10

10
5

0
0
25 50 75 100 125 150
0 50 100 150
T c , Case Temperature ( C) o
T c , Case Temperature ( o C)

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature

1000 1

DUTY=0.5
Normalized Thermal Response (R thjc)

100
10us
0.2

100us
ID (A)

0.1
10 1ms 0.1

0.05

10ms PDM
0.02
SINGLE PULSE
100ms t
0.01 T
1

Duty factor = t/T

T c =25 o C Peak Tj = P DM x Rthjc + TC

Single Pulse
0.1
0.01
0.1 1 10 100
0.00001 0.0001 0.001 0.01 0.1 1
V DS (V) t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
 AP9916H/J

f=1.0MHz
16 1000

14 I D =18A
Ciss
VGS , Gate to Source Voltage (V)

12 V DS =10V
Coss
V DS =15V
10
V DS =18V

C (pF)
8
100 Crss

0
0 5 10 15 20 25 30 35 40 45 10
1 5 9 13 17 21 25
Q G , Total Gate Charge (nC) V DS (V)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

100 1.2

10 0.95

o
T j =150 C
T j =25 o C
VGS(th) (V)
IS (A)

1 0.7

0.1 0.45

0.01 0.2
0 0.4 0.8 1.2 1.6 -50 0 50 100 150
V SD (V) T j , Junction Temperature ( o C )

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AP9916H/J

VDS
RD 90%

VDS TO THE
D OSCILLOSCOPE

0.5x RATED VDS

RG G

10%
+ S
5v
VGS
VGS
-

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VG

VDS

TO THE QG
D OSCILLOSCOPE
5V
RATED VDS
G QGS QGD

S VGS
+
1~ 3 mA
-
IG ID

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform