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IRFB4229PbF
Features
l Advanced Process Technology Key Parameters
l Key Parameters Optimized for PDP Sustain,
VDS min 250 V
Energy Recovery and Pass Switch Applications
VDS (Avalanche) typ. 300 V
l Low EPULSE Rating to Reduce Power
Reliable Operation D
D
l Short Fall & Rise Times for Fast Switching
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness G
S
and Reliability D
G
l Class-D Audio Amplifier 300W-500W S
(Half-bridge) TO-220AB
G D S
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 33
IDM Pulsed Drain Current c 180
IRP @ TC = 100°C Repetitive Peak Current g 91
PD @TC = 25°C Power Dissipation 330 W
PD @TC = 100°C Power Dissipation 190
Linear Derating Factor 2.2 W/°C
TJ Operating Junction and -40 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw x
10lb in (1.1N m) x N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case f ––– 0.45
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient f ––– 62
nH 6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package G
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 130 mJ
EAR Repetitive Avalanche Energy c ––– 33 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 300 ––– V
IAS Avalanche Currentd ––– 26 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– MOSFET symbol
46
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– integral reverse
180
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 26A, VGS = 0V e
trr Reverse Recovery Time ––– 190 290 ns TJ = 25°C, IF = 26A, VDD = 50V
Qrr Reverse Recovery Charge ––– 840 1260 nC di/dt = 100A/µs e
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IRFB4229PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)
5.5V
10 10
5.5V
≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
1000 3.5
ID = 26A
100
TJ = 175°C 2.5
10
(Normalized)
2.0
1 1.5
TJ = 25°C
1.0
0.1
VDS = 25V
0.5
≤ 60µs PULSE WIDTH
0.01
0.0
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
1600 1400
L = 220nH L = 220nH
C = 0.3µF 1200 C = Variable
100°C 100°C
1200 25°C 25°C
Energy per pulse (µJ)
1000
800
800
600
400
400
200
0 0
150 160 170 180 190 200 100 110 120 130 140 150 160 170
VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current
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IRFB4229PbF
2000 1000
L = 220nH
C= 0.3µF
TJ = 175°C
1200
10
800
1
400 TJ = 25°C
VGS = 0V
0 0.1
25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C) VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage
7000 20
VGS = 0V, f = 1 MHZ ID= 26A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 160V
Ciss
12
4000
3000 8
2000 Coss
4
1000
Crss
0
0
0 20 40 60 80 100 120
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
50 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
40 1µsec
100
ID, Drain Current (A)
100µsec
10µsec
30
10
20
1
10
Tc = 25°C
Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TJ , Junction Temperature (°C) VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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IRFB4229PbF
600
0.40
()
RDS (on), Drain-to -Source On Resistance Ω
0.20 300
200
TJ = 125°C
0.10
TJ = 25°C 100
0.00 0
5 6 7 8 9 10 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)
Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0 140
ton= 1µs
Duty cycle = 0.25
VGS(th) Gate threshold Voltage (V)
4.5 120
Half Sine Wave
3.5 80
3.0 60
2.5 40
2.0 20
1.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
Thermal Response ( ZthJC )
0.1 0.20
0.10
R1
R1
R2
R2
R3
R3 Ri (°C/W) τι (sec)
0.05 τJ τC
τJ
τ1
τ 0.080717 0.000052
τ2 τ3
τ1
0.02
τ2 τ3
0.209555 0.001021
0.01
0.01 Ci= τi/Ri
Ci= τi/Ri 0.159883 0.007276
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
Ripple ≤ 5% ISD
* Use P-Channel Driver for P-Channel Measurements *** VGS = 5V for Logic Level Devices
** Reverse Polarity for P-Channel
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS
Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform
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IRFB4229PbF
A PULSE A
RG C
DRIVER
L
PULSE B
VCC
B
Ipulse
RG
DUT tST
Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms
RD VDS
V DS
90%
V GS
D.U.T.
RG
+
-V DD
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 % td(on) tr t d(off) tf
Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms
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IRFB4229PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2007
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