FQD7N60/FQI7N60

600V,7A N-Channel MOSFET

General Description Product Summary

The FQD7N60 & FQI7N60 have been fabricated using an

advanced high voltage MOSFET process that is designed VDS 700V@150℃
to deliver high levels of performance and robustness in ID (at VGS=10V) 7A
popular AC-DC applications.
RDS(ON) (at VGS=10V) < 1.3Ω
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested!
100% Rg Tested!

TO252 TO251A
DPAK IPAK
D
Bottom View Bottom View

G G G
D
S
S S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 7
ID
CurrentB TC=100°C 4.5 A
C
Pulsed Drain Current IDM 24
Avalanche Current C IAR 3.6 A
Repetitive avalanche energy C EAR 194 mJ
Single pulsed avalanche energy H EAS 388 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25°C 178 W
PD
Power Dissipation B Derate above 25oC 1.4 W/ oC
Junction and Storage Temperature Range TJ, TSTG -50 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C

Thermal Characteristics
Parameter Symbol Typical Maximum Units
Maximum Junction-to-Ambient A,G RθJA 45 55 °C/W
Maximum Case-to-sink A RθCS - 0.5 °C/W
Maximum Junction-to-CaseD,F RθJC 0.5 0.7 °C/W

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 FQD7N60/FQI7N60

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 600
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 700 V
BVDSS
Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.67 V/ oC
/∆TJ
VDS=600V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=480V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 3.3 3.9 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A 1.1 1.3 Ω
gFS Forward Transconductance VDS=40V, ID=3.5A 7.5 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 7 A
ISM Maximum Body-Diode Pulsed Current 24 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 780 975 1170 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 60 88 115 pF
Crss Reverse Transfer Capacitance 4 7.3 11 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3.2 5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 15 19.3 24 nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=7A 4.6 nC
Qgd Gate Drain Charge 6.9 nC
tD(on) Turn-On DelayTime 25 ns
tr Turn-On Rise Time VGS=10V, VDS=300V, ID=7A, 37 ns
tD(off) Turn-Off DelayTime RG=25Ω 58 ns
tf Turn-Off Fall Time 33 ns
trr Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V 300 388 470 ns
Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V 3.4 4.4 5.5 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.6A, VDD=150V, RG=10Ω, Starting TJ=25°C

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 FQD7N60/FQI7N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

12 100
10V
10 VDS=40V
-55°C
6V

8 10
5.5V
ID (A)

ID(A)
6 125°C

4 1
5V
25°C
2
VGS=4.5V
0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

2.4 3

2.1 2.5
Normalized On-Resistance

VGS=10V
1.8 VGS=10V 2 ID=3.5A
Ω)
RDS(ON) (Ω

1.5 1.5

1.2 1

0.9 0.5

0.6 0
0 3 6 9 12 15 -100 -50 0 50 100 150 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.2 1E+02
ID=30A
1E+01
1.1 40
BVDSS (Normalized)

1E+00 125°C
IS (A)

1 125° 1E-01 25°C

1E-02
0.9
25°
1E-03

0.8 1E-04
-100 -50 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1
TJ (oC) VSD (Volts)
Figure 5: Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics

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 FQD7N60/FQI7N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000

VDS=480V Ciss
12 ID=3.5A
1000

Capacitance (pF)
VGS (Volts)

9 Coss

100
6
Crss
10
3

0 1
0 5 10 15 20 25 30 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000
TJ(Max)=150°C
10µs 800 TC=25°C
10 RDS(ON)
limited
100µs
ID (Amps)

Power (W)

600
1 1ms
DC
10ms 400

0.1
200
TJ(Max)=150°C
TC=25°C
0.01 0
1 10 100 1000 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=0.7°C/W
1

0.1 PD

Single Pulse
Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 FQD7N60/FQI7N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

200 8

160
Power Dissipation (W)

Current rating ID(A)

120
4
80

2
40

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B)

400
TJ(Max)=150°C
TA=25°C
300
Power (W)

200

100

0
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
Thermal Resistance

0.1

PD
0.01
Ton
Single Pulse T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

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 FQD7N60/FQI7N60

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ Vdd IRM
Vgs VDC
Vdd
Ig
- Vds

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