Beruflich Dokumente
Kultur Dokumente
Cies 4500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 300 pF
Cres 60 pF
Qg 200 250 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 80 nC
Qgc 88 120 nC
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXGH 40N60 IXGM 40N60
IXGH 40N60A IXGM 40N60A
80 350
T J = 25°C VGE = 15V 13V T J = 25°C
70 11V
300
60 9V
250
IC - Amperes
IC - Amperes
50 VGE = 15V
13V 200
40 11V
9V 150 7V
30 7V
5V 100
20
10 50
5V
0 0
0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20
1.3
7
VCE - Volts
6 1.2
5 1.1
IC = 40A
4 1.0
3
IC = 40A 0.9 IC = 20A
2
1 IC = 20A 0.8
0 0.7
4 5 6 7 8 9 10 11 12 13 14 15 -50 -25 0 25 50 75 100 125 150
60
1.0
IC - Amperes
50
0.9
40 BVCES @ 3mA
0.8
30
0.7
20
TJ = 25°C
10 0.6
T J = 125°C
0 0.5
0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
15 100
IC = 40A
V CE = 500V T J = 125°C
12 dV/dt < 3V/ns
10
IC - Amperes
VGE - Volts
9
1
6
0.1
3
0 0.01
0 50 100 150 200 250 0 100 200 300 400 500 600 700
4500
Cies
4000
3500
Capacitance - pF
3000
2500
2000
1500
Coes
1000
Cres
500
0
0 5 10 15 20 25
VCE - Volts
D=0.5
0.1 D=0.2
Zthjc (K/W)
D=0.1
D=0.05
D=0.02 D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025