ICs

1. In an IC :- (Reference: V.K Mehta pg. 628)

a. individual component can't be removed.
b. individual component may be removed.
c. either a or b
2. In an IC , active element is : (Reference: V.K Mehta pg. 628)
a. transistor b. transistor and diode c. transistor and capacitor
3. In an IC , it is neither convinient nor economical to fabricate capacitor exceeding :(Reference:
V.K Mehta pg. 629)
a. 30 PF b. 50 PF c. 40 PF
4. It is not possible to produce high power IC greater than :(Reference: V.K Mehta pg. 629)
a. 20W b. 10W c. 15W
5. It is usually very difficult to form ________ in an IC :(Reference: V.K Mehta pg. 628)
a. Capcitor b. Diode c. Inductor
6. In an IC, passive element are : (Reference: V.K Mehta pg. 628)
a. Resistor & Capacitor b. Diode and transistor c. resistor and
capacitor
7.In a monolithic IC all Circuit component and their interconnections are formed on single thin
wafer called : (Reference: V.K Mehta pg. 629)
a. base b. substrate c. both a and b
8. ___________ possesses characteristics which are best suited to IC manufacturing process :
(Reference: V.K Mehta pg. 629)
a. Ge b. Si c. both a and b
9. Epitarial n layer us form over wafers with a gas mixture of : (Reference: V.K Mehta pg. 630)
a. Si atoms & pentavalent atom
b. Si atom & trivalent atom
c. Ge atom & pentavalent atom
10. Method of packing of IC to protect IC from external environment is known as : (Reference:
V.K Mehta pg. 635)
a. hermatic / metal or ceramic with glass
b. non hermatic (plastic)
c. both
11. The RC are external component of whose value determine in : (Reference: V.K
Mehta pg. 637)
a. time(seconds) b. time(minutes) c. none
12. In IC fabrication SiO2 layer acts as a : (Reference: V.K Mehta pg. 630)
a. conducting layer b. insulating layer
c. insulating layer about 1 micro meter thick
d. insulating layer about 0.5 micro meter thick
13. It is not possible to fabricate _________ on surface of semi conductor chip. (Reference: V.K
Mehta pg. 629)
a. inductor b. inductor & transformers c. transformer & capacitor
14. An IC has ___________ size: (Reference: V.K Mehta pg. 628)
a. very large b. extremely small
c. large d. none
15. IC's are generally made of : (Reference: V.K Mehta pg. 630)
a. Si b. Ge c. Cu d. none
16. __________ IC's are the most commonly used. (Reference: V.K Mehta pg. 629)
a. thin film b. monolithic c. hybrid d. none
17. The most popular form of IC package is: (Reference: V.K Mehta pg. 635)
a. DIL b. flat pack c. TO-5
18.__________ can't be fabricated on an IC: (Reference: V.K Mehta pg. 635)
a. transistors b. diode c. large inductors & transformers
19. An audiio amplifier is an example of : (Reference: V.K Mehta pg. 641)
a. digital IC b. linear IC c. both d. none
20. We use ________ IC's in component . (Reference: V.K Mehta pg. 641)
a. digital b. linear c. both
21. SiO2 layer in an IC acts as : (Reference: V.K Mehta pg. 630)
a. a resistor b. an insulating c. mechanical output
22. A transistor takes _______ than an inductor on a silicon IC chip .
(Reference: V.K Mehta pg. 630)
a. less space b. more space c. same space
23. Most popular type of IC's are : (Reference: V.K Mehta pg. 628)
a. thin film b. hybrid c. thick film d.monolithics
24. Digital IC's possess : (Reference: V.K Mehta pg. 641)
a. linear signal only b. digital signal only c. both linear and digital
25. Operational amplifier use : (Reference: V.K Mehta pg. 641)
a. linear IC's b. digital IC's c. both
26. Which of the following is most difficult to fabricate in an IC ? (Reference: V.K
Mehta pg. 633)
a. diode b. transistor c.FET d. capacitor