PD - 97040

IRF7210PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance A
P-Channel MOSFET
1 8
l S D

l Surface Mount S
2 7
D
VDSS = -12V
l Available in Tape & Reel 3 6
S D
l Lead-Free
4
RDS(on) = 0.007Ω
5
G D

Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infra red, or wave soldering techniques.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±16
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±12 A
IDM Pulsed Drain Current  ±100
PD @TA = 25°C Power Dissipation 2.5
W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 16 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Max. Units
RθJA Maximum Junction-to-Ambientƒ 50 °C/W
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IRF7210PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
––– .005 .007 VGS = -4.5V, ID = -16A ‚
RDS(on) Static Drain-to-Source On-Resistance Ω
––– .007 .010 VGS = -2.5V, ID = -12A ‚
VGS(th) Gate Threshold Voltage -0.6 ––– ––– V VDS = VGS, ID = -500µA
gfs Forward Transconductance 16 ––– ––– S VDS = -10V, ID = -16A
––– ––– -10 VDS = -12V, VGS = 0V
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 µA VDS = -9.6V, VGS = 0V
––– ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -12V
IGSS
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
Qg Total Gate Charge ––– 212 ––– ID = -10A
Q gs Gate-to-Source Charge ––– 27 ––– nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 52 ––– VGS = -5.0V‚
td(on) Turn-On Delay Time ––– 50 ––– ns VDD = -10V
tr Rise Time ––– 3.0 ––– ID = -10A
td(off) Turn-Off Delay Time ––– 6.5 ––– µs RD = 1.0Ω
tf Fall Time ––– 30 ––– RG = 6.2Ω ‚
Ciss Input Capacitance ––– 17179 ––– VGS = 0V
Coss Output Capacitance ––– 9455 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 8986 ––– ƒ = 1.0kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -2.5

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -100
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V ‚
trr Reverse Recovery Time ––– 165 247 ns TJ = 25°C, IF = -2.5A
Qrr Reverse RecoveryCharge ––– 296 444 nC di/dt = 85A/µs ‚

Notes:
 Repetitive rating; pulse width limited by ƒ When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.

‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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 IRF7210PbF
20 16
VGS VGS 300µs PULSE WIDTH
TOP -1.8V 300µs PULSE WIDTH TOP -1.8V
-1.6V TJ = 25°C -1.6V TJ = 150°C
-1.4V -1.4V
-1.2V -1.2V

-I , Drain-to-Source Current (A)

-I , Drain-to-Source Current (A)

-1.0V -1.0V
16 BOTTOM -0.8V BOTTOM -0.8V
12

12

4
4
D

D
-0.8V
-0.8V
0 A 0 A
0 2 4 6 8 10 0 2 4 6 8 10
-VDS , Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

140 2.0
ID = -16A
RDS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)

120
TJ = 25°C
1.5
100
(Normalized)

80

1.0
60 TJ = 150°C

40
0.5

20
V DS = -10V
300µs PULSE WIDTH VGS = -4.5V
0
A 0.0
0.0 2.0 4.0 6.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-V GS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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 IRF7210PbF

24000 10
V GS = 0V, f = 1MHz I D = -10A
Ciss = Cgs + Cgd , Cds SHORTED

-VGS , Gate-to-Source Voltage (V)

Crss = Cgd
VDS = -12V
Coss = Cds + C gd 8
20000
C, Capacitance (pF)

Ciss
6

16000

12000
2
Coss
Crss
8000 A 0 A
0 2 4 6 8 10 12 0 50 100 150 200 250 300
-V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
RDS(on) , Drain-to-Source On Resistance ( Ω )

OPERATION IN THIS AREA LIMITED

-I SD , Reverse Drain Current (A)

BY RDS(on)
-IID , Drain Current (A)

TJ = 25°C
100 100
100us
TJ = 150°C

1ms

10 10
10ms

TA = 25 ° C
TJ = 150 ° C
VGS = 0V Single Pulse
1 A 1
0.0 2.0 4.0 6.0 8.0 10.0 0.1 1 10 100
-V SD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area.

Forward Voltage

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 IRF7210PbF

100
Thermal Response (Z thJA )

D = 0.50

0.20
10
0.10

0.05

0.02 PDM
0.01
1 SINGLE PULSE t1
(THERMAL RESPONSE)
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.001 0.01 0.1 1 10 100
t1, Rectangular Pulse Duration (sec)

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7210PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)

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SO-8 Part Marking Information

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 IRF7210PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/05
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