SHOBANRAJ LETCHUMANAN

13561
MECHATRONICS ENGINEERING
ASSIGNMENT EEE133: ELECTRONIC CIRCUIT AND DEVICES
PART A: DESCRIPTION OF TRANSISTOR

Basis of operation of n-channel D-MOSFET

The basic construction of n-channel depletion type MOSFET is

provided in the figure shown above. The Depletion-mode
MOSFET, which is less common than the enhancement mode
types is normally switched “ON” (conducting) without the
application of a gate bias voltage. That is the channel conducts
when VGS = 0 making it a “normally-closed” device. The circuit
symbol shown above for a depletion MOS transistor uses a solid
channel line to signify a normally closed conductive channel.For the n-channel depletion MOS
transistor, a negative gate-source voltage, -VGS will deplete (hence its name) the conductive channel of
its free electrons switching the transistor “OFF”. Likewise for a p-channel depletion MOS transistor a
positive gate-source voltage, +VGS will deplete the channel of its free holes turning it “OFF”.In other
words, for an n-channel depletion mode MOSFET: +VGS means more electrons and more current. While
a -VGS means less electrons and less current. The opposite is also true for the p-channel types. Then
the depletion mode MOSFET is equivalent to a “normally-closed” switch. A slab of p-type material is
formed from a silicon base and is referred to as the substrate. It is the foundation upon which the
device will be constructed. In some cases, the substrate is internally connected to the source terminal.
The source and drain terminals are connected through metallic contacts to n-doped regions linked by
an n-channel . The fact that the SiO2 layer is an insulating layer reveals the following fact: There is no
direct electrical connection between the gate terminal and the channel of a MOSFET. It is the insulating
layer of SiO2 in the MOSFET construction that accounts for the very desirable high input impedance of
the device. In fact, the input resistance of a MOSFET is often that of the typical JFET, even though the
input impedance of most JFETs is sufficiently high for most applications. In the figure ,the gate-to-
source voltage is set to zero volts by the direct connection from one terminal to the other and a voltage
VDS is applied across the drain to source terminals. The result is an attraction for the positive potential
at the drain by the free electrons of the n-channel and a current similar to that established through the
channel of the JFET. In fact, the resulting current with VGS = 0 V continues to be labeled IDSS, as shown
in the characteristics of depletion type MOSFET figure.

Relation of D-MOSFET, E-MOSFET AND JFET in basic operation

(i) Induced channel in between of drain and source is required for both D-MOSFET and E-MOSFET.
(ii) The current,I flowing between drain and source channel corresponds the input voltage like in
JFET
(iii) Both D-MOSFET and E-MOSFET are voltage-controlled devices which is controlled by gate-
source voltage,VGS.
(iv) MOSFET has to be handled with precautions as the D-MOSFET is something similar to JFET
which has a very high input resistance that can accumulate numerous static charges.

Important parameters in characterizing the performance of the chosen FET.

(i) Drain-source voltage,VDS
(ii) Drain current,ID
(iii) Gate-source voltage,VGS

Related applications of the chosen FET.

 (i) current sources,
(ii) solid-state relays,
(iii) telecom switches
(iv) Linear Voltage Regulator

PART B: DESCRIPTION OF CHOSEN ISSUE, PROBLEM, OR SITUATION

A depletion MOSFET can also be used as a pass transistor for a linear regulator. A
linear regulator circuit using a depletion MOSFET plus a Zener diode. In the circuit,
Q1 acts as a source follower where the source voltage follows the gate voltage
(VG) minus the gateto-source voltage. VGS increases with increasing drain current.
Thus, with a fixed gate voltage, the source voltage will drop with increasing load
current. For design purposes, VGS under saturation and cut-off conditions (0 V and
VGS(th), respectively) can be used. These values can be readily obtained from the datasheet, and Figure 11
shows the cut-off and saturation conditions of the Infineon BSS169. Bias current for the Zener diode is
determined by VGS/R. The Zener diode sets the gate voltage and should be selected to provide a source
voltage within the range determined, taking into account the variances of VGS with load.

PART C: EXPLANATION ON THE ENVIRONMENTAL, ECONOMIC, AND SOCIAL IMPACTS – CONSIDERING

THE STAKEHOLDERS

Low total cost of Linear Voltage Regulator accounted for about 67% of sales market share in total. Fast
development in most Chinese domestic industrial technologies, Linear Voltage are in progressed to be more
advanced and eco-friendly. Less complex it makes less pollution.

No Stakeholder Impact
Positive Negative
(Provide explanation) (Provide explanation)
1 Electronic industry manufacturers Organize more electronic Can be only used as step down
product due to the advanced voltage which needs greater
operating current, droupoud voltage hence more heat wastage
voltage, noise and packaging
2 consumer Lesser cost and noise Efficiency is in between low
and medium