Semiconductor IRF9540, IRF9541, IRF9542,

IRF9543, RF1S9540, RF1S9540SM

-15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm,
July 1998 P-Channel Power MOSFETs

Features Description
• -15A and -19A, -80V and -100V These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
• rDS(ON) = 0.20Ω and 0.30Ω
MOSFETs designed, tested, and guaranteed to withstand a
• Single Pulse Avalanche Energy Rated specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
• SOA is Power Dissipation Limited applications such as switching regulators, switching conver-
• Nanosecond Switching Speeds tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
• Linear Transfer Characteristics gate drive power. They can be operated directly from inte-
• High Input Impedance grated circuits.

• Related Literature Formerly Developmental Type TA17521.

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Ordering Information
D
PART NUMBER PACKAGE BRAND

IRF9540 TO-220AB IRF9540

G
IRF9541 TO-220AB IRF9541
S
IRF9542 TO-220AB IRF9542

IRF9543 TO-220AB IRF9543

RF1S9540 TO-262AA RF1S9540

RF1S9540SM TO-263AB RF1S9540

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.

Packaging
JEDEC TO-220AB JEDEC TO-262AA
SOURCE
DRAIN SOURCE
DRAIN
(FLANGE) DRAIN
GATE GATE

DRAIN (FLANGE)

JEDEC TO-263AB

DRAIN
(FLANGE)
GATE
SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 2282.4
Copyright © Harris Corporation 1998
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 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF9540, RF1S9540,
RF1S9540SM IRF9541 IRF9542 IRF9543 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS -100 -80 -100 -80 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR -100 -80 -100 -80 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID -19 -19 -15 -15 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID -12 -12 -10 -10 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM -76 -76 -60 -60 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . PD 150 150 150 150 W
Linear Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 960 960 960 960 mJ
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 175 -55 to 175 -55 to 175 -55 to 175 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL 300 300 300 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 260 260 260 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V

IRF9540, IRF9542, (Figure 10) -100 - - V
RF1S9540, RF1S9540SM

IRF9541, IRF9543 -80 - - V

Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V - - -250 µA

TC = 125oC

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V
IRF9540, IRF9541, -19 - - A
RF1S9540, RF1S9540SM

IRF9542, IRF9543 -15 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = -10A, VGS = -10V

IRF9540, IRF9541, (Figures 8, 9) - 0.15 0.20 Ω
RF1S9540, RF1S9540SM

IRF9542, IRF9543 - 0.22 0.30 Ω

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON) MAX, ID = -6A 5 7 - S
(Figure 12)

Turn-On Delay Time td(ON) VDD = -50V, ID ≈19A, RG = 9.1Ω, RL = 2.3Ω, - 16 20 ns

VGS = -10V, (Figures 17, 18)
Rise Time tr - 65 100 ns
MOSFET Switching Times are Essentially
Turn-Off Delay Time td(OFF) Independent of Operating Temperature - 47 70 ns

Fall Time tf - 28 70 ns

Total Gate Charge Qg(TOT) VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS, - 70 90 nC
(Gate to Source + Gate to Drain) Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Gate to Source Charge Qgs - 14 - nC
Operating Temperature
Gate to Drain “Miller” Charge Qgd - 56 - nC

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 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 1100 - pF
(Figure 11)
Output Capacitance COSS - 550 - pF

Reverse Transfer Capacitance CRSS - 250 - pF

Internal Drain Inductance LD Measured From the Modified MOSFET - 3.5 - nH

Contact Screw on Tab to Symbol Showing the
the Center of Die Internal Devices
Inductances
Measured From the D - 4.5 - nH
Drain Lead, 6mm
(0.25in) from Package to LD
the Center of Die
G
Internal Source Inductance LS Measured From the - 7.5 - nH
LS
Source Lead, 6mm
(0.25in) From Package S
to Source Bonding Pad

Thermal Resistance Junction to Case RθJC - - 1 oC/W

Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 62.5 oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET Sym- - - -19 A

bol Showing the Integral D
Pulse Source to Drain Current ISDM Reverse - - -76 A
(Note 3) P-N Junction Diode
G

Source to Drain Diode Voltage (Note 2) VSD TC = 25oC, ISD = -19A, VGS = 0V (Figure 13) - - -1.5 V

Reverse Recovery Time trr TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 170 - ns

Reverse Recovery Charge QRR TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 0.8 - µC

NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25Ω, peak IAS = 19A. (Figures 15, 16).

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 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Typical Performance Curves Unless Otherwise Specified

1.2 -20
POWER DISSIPATION MULTIPLIER

1.0 IRF9540,
-20 IRF9541,

ID, DRAIN CURRENT (A)

RF1S9540, SM
0.8
-15

0.6
IRF9542,
-10 IRF9543
0.4

-5
0.2

0 0
0 25 50 75 100 125 150 175 25 75 125 175
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

1
THERMAL IMPEDANCE (oC/W)

0.5
ZθJC, TRANSIENT

0.2

0.1 PDM
0.1
0.05
t1
0.02
t2
0.01
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 1 10
t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200 -100
IRF9540, 1 VGS = -16V PULSE DURATION = 80µs
100 RF1S9540, SM
VGS = -14V
IRF9542, 3 -80
10µs
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

IRF9540, 1
Rf1S9540, SM 100µs
1ms
10 IRF9542, 3 -60 VGS = -12V

10ms VGS = -10V

OPERATION IN THIS 100ms -40
AREA IS LIMITED DC VGS = -9V
1 BY rDS(ON) VGS = -8V
-20
VGS = -7V
TC = 25oC
IRF9541, 3 IRF9540, 2 VGS = -6V
TJ = MAX RATED
RF1S9540, SM VGS = -5V
SINGLE PULSE 0 VGS = -4V
0.1 0 -10 -20 -30 -40 -50
1 10 100 500
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

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 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Typical Performance Curves Unless Otherwise Specified (Continued)

-50 -100

IDS(ON), DRAIN TO SOURCE CURRENT (A)

PULSE DURATION = 80µs VGS = -16V VGS = -12V PULSE DURATION = 80µs
VGS = -14V
-40
ID, DRAIN CURRENT (A)

VGS = -10V
-10
-30 VGS = -9V

VGS = -8V
-20 TJ = 125oC
VGS = -7V -1
TJ = 25oC
-10 VGS = -6V
TJ = -55oC
VGS = -5V
VGS = -4V
0 -0.1
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 -12 -14
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

0.26 2.0
PULSE DURATION = 80µs VGS = -10V
NORMALIZED DRAIN TO SOURCE
rDS(ON), DRAIN TO SOURCE ON

ID = -10A
0.22 VGS = -10V
1.5
ON RESISTANCE
RESISTANCE (Ω)

0.18
VGS = -20V
1.0

0.14

0.5
0.10

0.2
0 -20 -40 -60 -80 -100 -40 0 40 80 120 160
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

1.15 2000
ID = 250µA VGS = 0V, f = 1MHz
CISS = CGS + CGD
NORMALIZED DRAIN TO SOURCE

1600 CRSS = CGD

COSS ≈ CDS + CGD
BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)

1.05
CISS
1200

0.95
800
COSS

0.85
400 CRSS

0
0.75 0 -10 -20 -30 -40 -50
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

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 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Typical Performance Curves Unless Otherwise Specified (Continued)

15 100
PULSE DURATION = 80µs

ISD, SOURCE TO DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

12 TJ = 150oC
TJ = -55oC
TJ = 25oC
10
9
TJ = 25oC

6 TJ = 125oC
1

0 0.1
0 -20 -40 -60 -80 -100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID, DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

0
ID = -19A
VGS, GATE TO SOURCE (V)

-5

VDS = -20V
-10
VDS = -50V
VDS = -80V, IRF9540, IRF9542

0 20 40 60 80
Qg(TOT) , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Test Circuits and Waveforms

VDS
tAV

L 0

VARY tP TO OBTAIN
REQUIRED PEAK IAS RG
-
VDD
+

0V DUT VDD
tP IAS
VGS
VDS
IAS tP
0.01Ω
BVDSS

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
0
RL 10% 10%

DUT - VDS
VDD 90% 90%
RG
VGS + VGS
0
10%

50% 50%
PULSE WIDTH
90%

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

-VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
0

VDS
DUT
12V
0.2µF 50kΩ
BATTERY
0.3µF
Qgs VGS
D Qgd

Qg(TOT)
G DUT
VDD
0
Ig(REF) S 0
+VDS
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR Ig(REF)

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS