INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor KT8232A1

DESCRIPTION
·Built In Clamping Zener
·High Operating Junction Temperature
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for use in automotive environment as
electronic ignition power actuators.

ABSOLUTE MAXIMUM RATINGS(T a =25℃) B B

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 350 V

VCEO Collector-Emitter Voltage 350 V

V EBO B Emitter-Base Voltage 5 V

IC Collector Current-Continuous 20 A

ICM Collector Current-Peak 30 A

IB Base Current 1 A

IBM Base Current-Peak 5 A

Collector Power Dissipation

PC 125 W
@ T C =25℃
B B

TJ B B Junction Temperature 150 ℃

Tstg Storage Temperature Range -65~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

R th j-c
B B
Thermal Resistance, Junction to Case 1 ℃/W

isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark

 INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor KT8232A1

ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified
B B

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

☆ VCEO(SUS) Collector-Emitter Sustaining Voltage IC = 30mA

B 350 V

VCE(sat) Collector-Emitter Saturation Voltage IC = 8A; I B= 0.1A

B B 1.6 V

VBE(sat) Base-Emitter Saturation Voltage IC = 8A; I B = 0.1A

B B B 2 V

V CE = 350V; I B = 0 0.1
ICEO Collector Cutoff Current mA
B B B B

V CE = 350V; I B = 0;T C =125℃

B B B B B B 0.5

IEBO Emitter Cutoff Current V EB = 5V; I C =0

B B B B 10 mA

h FE
B DC Current Gain I C = 5A ; V CE = 5V
B B B B 300 2000

isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark