Beruflich Dokumente
Kultur Dokumente
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
1.2 Features
■ Logic level compatible ■ Low gate charge.
1.3 Applications
■ DC-to-DC converters ■ Switched-mode power supplies.
2. Pinning information
Table 1: Pinning - SOT428, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb d
2 drain (d) [1]
3 source (s)
mb mounting base; g
connected to drain (d)
2 MBB076 s
1 3
Top view MBK091
SOT428 (D-PAK)
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 175 °C - 30 V
VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 30 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 43.4 A
Tmb = 100 °C; VGS = 10 V; Figure 2 - 30.7 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 173.6 A
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 57.6 W
Tstg storage temperature −55 +175 °C
Tj junction temperature −55 +175 °C
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 °C - 43.4 A
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 173.6 A
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
03aa16
120 03aa24
120
Pder Ider
(%) (%)
80 80
40 40
0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)
P tot ID
P der = ----------------------- × 100% I der = ------------------- × 100%
P °
I °
tot ( 25 C ) D ( 25 C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of mounting base temperature. function of mounting base temperature.
03al88
103
ID
(A)
102
tp = 10 µ s
100 µ s
10
DC
1 ms
1
1 10 102
VDS (V)
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to mounting base Figure 4 - - 2.6 K/W
Rth(j-a) thermal resistance from junction to ambient SOT428 minimum footprint; - 75 - K/W
mounted on a PCB
03al87
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
0.02
10-1 tp
P δ=
T
single pulse
tp t
T
10-2
10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V
Tj = 25 °C 30 - - V
Tj = −55 °C 27 - - V
VGS(th) gate-source threshold voltage ID = 250 µA; VDS = VGS; Figure 9
Tj = 25 °C 1 1.5 2 V
Tj = 175 °C 0.5 - - V
Tj = −55 °C - - 2.2 V
IDSS drain-source leakage current VDS = 24 V; VGS = 0 V
Tj = 25 °C - 0.05 1 µA
Tj = 175 °C - - 500 µA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V - 10 100 nA
RDSon drain-source on-state resistance VGS = 4.5 V; ID = 12 A; Figure 7 and 8
Tj = 25 °C - 18 22 mΩ
Tj = 175 °C - 32.4 39.6 mΩ
VGS = 10 V; ID = 25 A; Figure 7 - 14 17 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID = 36 A; VDD = 15 V; VGS = 10 V; Figure 13 - 18.5 - nC
Qgs gate-source charge - 4.2 - nC
Qgd gate-drain (Miller) charge - 2.9 - nC
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 - 690 - pF
Coss output capacitance - 160 - pF
Crss reverse transfer capacitance - 110 - pF
td(on) turn-on delay time VDD = 15 V; RL = 0.6 Ω ; - 6 - ns
tr rise time VGS = 10 V; RG = 10 Ω - 10 - ns
td(off) turn-off delay time - 33 - ns
tf fall time - 19 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 - 0.97 1.2 V
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
03al89 03al91
30 40
10 V 4.5 V 3.8 V 3.5 V
Tj = 25 °C 3.4 V ID VDS > ID x RDSon
ID (A)
(A)
3.2 V 30
20
3V
20
2.8 V
10
2.6 V 10
175 °C Tj = 25 °C
VGS = 2.4 V
0 0
0 0.2 0.4 0.6 0.8 1 0 1 2 3 4
VDS (V) VGS (V)
03al90 03af18
40 2
Tj = 25 °C
RDSon VGS = 3.4 V a
(mΩ)
3.5 V
30 1.5
3.8 V
20 4.5 V 1
10 V
10 0.5
0 0
0 10 20 30 40 -60 0 60 120 180
ID (A)
Tj (°C)
Tj = 25 °C R DSon
a = ----------------------------
-
R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of drain current; typical values. factor as a function of junction temperature.
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
03aa33 03ai52
2.5 10-1
VGS(th) ID
(V) (A)
2 max 10-2
1 min 10-4
0.5 10-5
0 10-6
-60 0 60 120 180 0 1 2 3
Tj (°C) VGS (V)
03al93
104
C
(pF)
103
Ciss
Coss
102
Crss
10
10-1 1 10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
03al92 03al94
40 10
IS VGS = 0 V VGS ID = 36 A
(A) (V) Tj = 25 °C
8
30 VDD = 15 V
20
10
175 °C Tj = 25 °C 2
0 0
0 0.3 0.6 0.9 1.2 0 5 10 15 20
VSD (V) QG (nC)
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped) SOT428
seating plane
y
A
E A A2
b2 A1 E1
mounting
base
D1
D
HE
L2
2
L1
L
1 3
b1 b w M A c
e
e1
0 10 20 mm
scale
mm 2.38 0.65 0.93 0.89 1.1 5.46 0.4 6.22 6.73 4.81 2.285 4.57 10.4 2.95 0.9
4.0 0.5 0.2 0.2
2.22 0.45 0.73 0.71 0.9 5.26 0.2 5.98 6.47 4.45 9.6 2.55 0.5
Note
1. Measured from heatsink back to lead.
99-09-13
SOT428 TO-252 SC-63
01-12-11
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
7. Revision history
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
9. Definitions customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is Right to make changes — Philips Semiconductors reserves the right to
extracted from a full data sheet with the same type number and title. For make changes in the products - including circuits, standard cells, and/or
detailed information see the relevant data sheet or data handbook. software - described or contained herein in order to improve design and/or
Limiting values definition — Limiting values given are in accordance with performance. When the product is in full production (status ‘Production’),
the Absolute Maximum Rating System (IEC 60134). Stress above one or relevant changes will be communicated via a Customer Product/Process
more of the limiting values may cause permanent damage to the device. Change Notification (CPCN). Philips Semiconductors assumes no
These are stress ratings only and operation of the device at these or at any responsibility or liability for the use of any of these products, conveys no
other conditions above those given in the Characteristics sections of the licence or title under any patent, copyright, or mask work right to these
specification is not implied. Exposure to limiting values for extended periods products, and makes no representations or warranties that these products are
may affect device reliability. free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
10. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825
9397 750 11613 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
4.1 Transient thermal impedance . . . . . . . . . . . . . . 4
5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
www.datasheetcatalog.com