PVSYST V6.77 Changzhou Trina Solar Energy Co., Ltd.

(China) 15/01/19 Page 1/1

Characteristics of a PV module
Manufacturer, model : Trina Solar, TSM-400DE15M(II)
Availability : Prod. Since 2017
Data source : TSL,2018_12

STC power (manufacturer) Pnom 400 Wp Technology Si-mono

Module size (W x L) 1.004 x 2.024 m² Rough module area Amodule 2.03 m²
Number of cells 2 x 72 Sensitive area (cells) Acells 1.81 m²

Specifications for the model (manufacturer or measurement data)

Reference temperature TRef 25 °C Reference irradiance GRef 1000 W/m²
Open circuit voltage Voc 49.0 V Short-circuit current Isc 10.45 A
Max. power point voltage Vmpp 40.3 V Max. power point current Impp 9.92 A
=> maximum power Pmpp 399.8 W Isc temperature coefficient muIsc 5.2 mA/°C

One-diode model parameters

Shunt resistance Rshunt 1500 ohm Diode saturation current IoRef 0.188 nA
Serie resistance Rserie 0.27 ohm Voc temp. coefficient MuVoc -149 mV/°C
Diode quality factor Gamma 1.07
Specified Pmax temper. coeff. muPMaxR -0.37 %/°C Diode factor temper. coeff. muGamma -0.001 1/°C

Reverse Bias Parameters, for use in behaviour of PV arrays under partial shadings or mismatch
Reverse characteristics (dark) BRev 3.20 mA/V² (quadratic factor (per cell))
Number of by-pass diodes per module 3 Direct voltage of by-pass diodes -0.7 V

Model results for standard conditions (STC: T=25°C, G=1000 W/m², AM=1.5)
Max. power point voltage Vmpp 40.3 V Max. power point current Impp 9.93 A
Maximum power Pmpp 399.8 Wc Power temper. coefficient muPmpp -0.36 %/°C
Efficiency(/ Module area) Eff_mod 19.7 % Fill factor FF 0.781
Efficiency(/ Cells area) Eff_cells 22.0 %

PV module: Trina Solar, TSM-400DE15M(II)

12
Cells temp. = 25 °C
Incident Irrad. = 1000 W/m²
399.8 W
10

Incident Irrad. = 800 W/m²

320.4 W
8
Current [A]

Incident Irrad. = 600 W/m²

239.8 W
6

Incident Irrad. = 400 W/m² 158.5 W

4

Incident Irrad. = 200 W/m² 77.1 W

2

0
0 10 20 30 40 50 60
Voltage [V]

PVsyst Licensed to Changzhou Trina Solar Energy Co., Ltd. (China)