Suitable physical PERFORMANCE BASIC External pumping

dimensions REQUIREMENTS PROCESSES Spontaneous emission

Narrow beam width
Photon absorption
Linearity
Stimulated emission
Narrow line width
Adequate o/p INTERNAL
OPTICAL Convert electrical i/p signal
power into fiber QUANTUM into optical signal
EFFICIENCY TRANSMITTER
Fast response Launch generated optical signal
Direct modulation into optical fiber
at high frequencies
PRIMARY: GaAS, GaSb,
OPTICAL SOURCE
Direct InP, AnSb
Band Gap TERNARY: Al1-x GaxAs
Commonly employed in QUATERNARY:
fiber-optic GaxIn1-xAIYP1-y
communication systems (x/y = 0.45)
(semiconductor based)
Small λ content Large λ content

Highly coherent Incoherent

Directional Limited Directionality

SEMICONDUCTOR LASERS LIGHT EMITTING DIODE
(Light Amplification By Stimulated Fundamental Spontaneous
Emission Of Radiation) Mechanism emission
Stimulated Fundamental
emission Mechanism (aka, Laser diode, Injection laser)
Homo-junction
Structure Single and
Structure double hetero-
 ACTIVE LAYER(CORE) junction
Sandwiched b/w p and n-type
cladding layers with higher
Lasing Concepts

band gap [Broad-Area] Surface Emitting

 Etch most of the top cladding Types Edge Emitting
layer and deposit silica [ridge
waveguide] Super Luminescent

 Active region buried on all

sides by layers of low RI
[buried hetero structure] CW: P-I
curve
Characteristics
Spectral Increased doping,
Line width: increases line
Continuous Wave P- λ curve width
(CW) : P-I curve Laser
Broader pattern
Characteristics
Modulation Response for SLED than
ELED
Broadens with
Population inversion Optical Gain increase in λ
GP(N)=σg (n-NT)

Cleaved facets
Rm= [(n-1)/(n+1)]2 Optical Feedback
Threshold condition
Single Mode Lasers

Distributed Feedback Coupled cavity Tunable Vertical cavity surface emitting