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Chapter Outline
4.1 Device Structure and Physical Operation
4.2 Current‐Voltage Characteristics
4.3 BJT Circuits at DC
4.4 Applying the BJT in Amplifier Design
4.5 Small‐Signal Operation and Models
4.6 Basic BJT Amplifier Configurations
4.7 Biasing in BJT Amplifier Circuits
4.8 Discrete‐Circuit BJT Amplifiers
Physical structure of bipolar junction transistor (BJT)
Both electrons and holes participate in the conduction process for bipolar devices
BJT consists of two pn junctions constructed in a special way and connected in series, back to back
The transistor is a three‐terminal device with emitter, base and collector terminals
From the physical structure, BJTs can be divided into two groups: npn and pnp transistors
Modes of operation
The two junctions of BJT can be either forward or reverse‐biased Mode EBJ CBJ
The BJT can operate in different modes depending on the junction bias Cutoff Reverse Reverse
The BJT operates in active mode for amplifier circuits Active Forward Reverse
Switching applications utilize both the cutoff and saturation modes Saturation Forward Forward
N E L pE
1 AE qWni2 vBE / VT
Eelectron‐hole recombination in base: iB 2 Qn / n AE q nB (0)W / n e
2 2 N B n
D pE N B W 1 W 2 vBE / VT iC
Total base current: iB iB1 iB 2 IS ( )e
DnB N E L pE 2 DnB n
1 i I
Emitter current: iE iC iB iC C S e v BE / VT
iE iB
1 1
iC D pE N B W 1 W 2 1
Common‐emitter current gain: ( ) /(1 )
iB DnB N E L pE 2 DnB n
Common‐base current gain: /( 1)
The structure of actual transistors
In modern process technologies, the BJT utilizes a vertical structure
Typically, is smaller and close to unity while is large
np0exp(vBE/VT) np0exp(vBC/VT)
vBC increases
np0
Application of the EM model
The forward active mode:
1 iDE iDC
iC I S e vBE /VT I S 1
R
I 1 1
iB S e vBE / VT I S
F
F R
I 1
iE S e vBE / VT I S 1 iE iC
F F
The saturation mode:
RiDC FiDE
iC I S e vBE / VT I SC e vBC / VT
iB
iE I SE e v BE / VT
ISe vBC / VT
B iB E C
(3) RISC ISC (1)
iE iC
E C
Base current: iB iC /
Emitter current: iE iC iB
Large‐signal model and current gain for BJT in active region
iE iB
1 1
Exercise 4.1 (Textbook)
Exercise 4.3 (Textbook)
Circuit symbols, voltage polarities and current flow
Terminal currents are defined in the direction as current flow in active mode
Negative values of current or voltage mean in opposite polarity (direction)
Summary of the BJT current‐voltage relationships in the active mode
The terminal currents for a BJT in active mode solely depend on the junction voltage of EBJ
The ratios of the terminal currents for a BJT in active mode are constant
The current directions for npn and pnp transistors are opposite
The Early effect
As CBJ reverse bias increases, the effective base width Weff reduces due to the increasing depletion
For a constant junction voltage vBE:
The slope of nB(x) increases iC increases
nB (0) VZ
Charge storage Qn reduces iB decreases
Current gain and increases VY
Early voltage (VA) is used for the linear approximation of Early Effect VX
1 nB0
i V
Exhibit finite output resistance: ro C v BE constant A
vCE IC
0 WX WY WZ
NTUEE Electronics – L. H. Lu 4‐11
Common‐base output characteristics Early effect breakdown
Common‐emitter output characteristics (II)
Early effect breakdown
Plot of iC versus vCE with various iB as parameter
BJT in active region acts as a current source with
high (but finite) output resistance
The cutoff mode in common‐emitter configuration
is defined as iB = 0
Current gain: large‐signal bdc iC/iB and bac iC/iB
BJT operation modes
The BJT operation mode depends on the voltages at EBJ and BCJ
The I‐V characteristics are strongly nonlinear
Simplified models and classifications are needed to speed up the hand‐calculation analysis
npn transistor pnp transistor
Mode EBJ CBJ vBC vCB
Active Forward Reverse
Inverse Mode Saturation Mode Inverse Mode Saturation Mode
Cutoff Reverse Reverse vBE < 0, vBC 0 vBE 0, vBC 0 vEB < 0, vCB 0 vEB 0, vCB 0
vBE vEB
Saturation Forward Forward
Cutoff Mode Active Mode Cutoff Mode Active Mode
Inverse Reverse Forward vBE < 0, vBC < 0 vBE 0, vBC 0 vEB < 0, vCB < 0 vEB 0, vCB 0
Simplified models and classifications for the operation of the npn BJT
Cut‐off mode:
iE = iC = iB = 0
vBE < 0.5 V and vBC < 0.4 V
Active mode:
vBE = 0.7 V and iB : iC : iE = 1: : (1+)
vCE > 0.3 V
Saturation mode:
vBE = 0.7 V and vCE = 0.2 V
iC/iB = forced <
= 100
Example 4.5
Example 4.11 (Textbook)
BJT voltage amplifier
A BJT circuit with a collector resistor RC can be used as a simple voltage amplifier
Base terminal is used the amplifier input and the collector is considered the amplifier output
The voltage transfer characteristic (VTC) is obtained by solving the circuit from low to high vBE
Cutoff mode:
0 V vBE < 0.5 V and iC = 0
vO = vCE = VCC
Active mode:
vBE > 0.5 V and iC = ISexp(vBE/VT)
vO = VCC iCRC = VCC RCISexp(vBE/VT)
Saturation:
vBE further increases
vCE = vCEsat = 0.2 V
vO = 0.2 V
The collector current and the transconductance
The total quantities (ac + dc) of the collector current:
vBE VBE vbe
iC I S e vBE / VT ( I S eVBE / VT )e vbe / VT I C e vbe / VT
Small‐signal approximation: vbe << VT
v I
iC I C ic I C 1 be I C C vbe
VT VT
i I
g m C iC I C C
vBE VT
The transconductance indicates the incremental change of iC versus change of vBE
The transconductance gm is determined by its dc collector current IC
General, BJTs have relatively high transconductance compared with FETs at the same current level
The base current and the input resistance at the base
The total quantities (ac + dc) of the base current:
IC IS IS
iB e vBE / VT eVBE / VT e vbe / VT I B e vbe / VT
Small‐signal approximation:
v I
iB I B ib I B 1 be I B B vbe
VT VT
v VT
r be
ib gm I B
Resistance r is the small‐signal input resistance between base and emitter (looking into the base)
Neglect ro
The T model
Typically used as the emitter is not grounded
Neglect ro
Three basic configurations
Common‐Emitter (CE) Common‐Base (CB) Common‐Collector (CC)
Characterizing amplifiers
The BJT circuits can be characterized by a voltage amplifier model (unilateral model)
The electrical properties of the amplifier is represented by Rin, Ro and Avo
The analysis is based on the small‐signal or linear equivalent circuit (dc components not included)
vo RL
Voltage gain: Av Avo
vi RL Ro
v Rin Rin RL
Overall voltage gain: Gv o Av Avo
vsig Rin Rsig Rin Rsig RL Rso
Emitter degeneration resistance Re is adopted
Input resistance is increased by adding (1+)Re
Gain is reduced by the factor (1+gmRe)
The overall gain is less dependent on
It is considered a negative feedback of the amplifier
CC amplifier is also called emitter follower.
Input resistance is very high
Output resistance is very low
The voltage gain is less than but can be close to 1
CC amplifier can be used as voltage buffer
It is noted that, in the analysis, the amplifier is not unilateral
DC bias for BJT amplifier
The amplifiers are operating at a proper dc bias point
Linear signal amplification is provided based on small‐signal circuit operation
The DC bias circuit is to ensure the BJT in active mode with a proper collector current IC
The classical discrete‐circuit bias arrangement
A single power supply and resistors are needed
Thevenin equivalent circuit:
VBB = VCCR2/(R1+R2)
RB = R1||R2
VBB VBE
BJT operating point: I C
RB / RE (1 1 / )
Exercise 6.35 (Textbook)
Exercise 6.36(Textbook)
Circuit analysis:
DC analysis:
Remove all ac sources (short for voltage source and open for current source)
All capacitors are considered open‐circuit
DC analysis of BJT circuits for all nodal voltages and branch currents
Find the dc current IC and make sure the BJT is in active mode
AC analysis:
Remove all dc sources (short for voltage source and open for current source)
All large capacitors are considered short‐circuit
Replace the BJT with its small‐signal model for ac analysis
The circuit parameters in the small‐signal model are obtained based on the value of IC
Complete amplifier circuit DC equivalent circuit AC equivalent circuit
The common‐emitter amplifier with an emitter resistance
The common‐collector (CC) amplifier