THE UNIVERSITY OF NEW SOUTH WALES

SCHOOL OF ELECTRICAL ENGINEERING & TELECOMMUNICATIONS

 
ELEC2133 – ANALOGUE ELECTRONICS
 
Assignment 1

Due Date:  12 noon, Wednesday 6th Jan 2010 (Week 5)

Assignments submitted after this date will attract a penalty of 10% per day. No
assignment that is more than a week late will be accepted.

Assignment 1 is worth 7.5% of the final mark

Attach an assignment coversheet available from the EE School Office website and submit
to the assignment box outside room G12A in the Electrical Engineering Building by the
above deadline. Please ensure that the pages of your assignment are securely fastened,
and take a photocopy of your assignment before submitting.
 

  1
Transistor models and parameters
Mosfet (n-channel enhancement mode)
1 C gd
  G D
2
where  
C
250 / gs
g v ro
m gs
0.6
v
r0 = 100KΩ gs

For a transistor size of (W/L) =40,

S
Cgs = 3.5 pF, Cgd = 0.1 pF
Small signal model

Bipolar Junction transistor (BJT)

Cμ
b c
   1
where the thermal voltage at room ro
vbe gmvbe
temperature is   rπ Cπ
0.26
Early voltage VA = 200 v
β = 150
e
 
2   Hybrid-π model ( rµ assumed to be
2  very large)
    0.2 
ro = VA/IC

  2
Question 1

Figure 1: CE-CB Amplifier

Consider the CE-CB two-stage amplifier in Figure 1. In order to determine the frequency
response of this amplifier, we will use the short-circuit and open-circuit time constant
methods to calculate the low and high frequency breakpoints.

Use the following component values:

RS = 200Ω, R11 = 22kΩ, R21 = 47kΩ, RC1 = 15kΩ, RE1 = 9kΩ, R12 = 22kΩ, R22 = 47kΩ, RC2
= 15kΩ, RE2 = 9kΩ, RL = 10kΩ.

C1 = 1µF, C2 = 10µF, C3 = 1µF, C4 = 20µF, C5 = 20µF.

Q1 and Q2 have the following parameters:

β1 = 100, gm1 = 71.4mΩ-1, rπ1 = 1.4kΩ.

β2 = 150, gm2 = 107.1mΩ-1, rπ2 = 1.4kΩ.

For this question, you may assume that rb = 0 Ω, rμ → ∞, and that the Early effect may be
neglected.

a) Draw the small signal equivalent circuit in a form suitable for low-frequency
analysis.

b) Calculate the equivalent resistance facing each of the external capacitors (C1 – C5)
using the short-circuit time constant method.

c) Calculate the lower 3dB cut-off frequency for this amplifier.

  3
For the high-frequency analysis, use the following capacitor values:

Cµ1 = Cµ1 = 1pF, Cπ1 = Cπ2 = 15pF.

d) Redraw the small signal equivalent circuit in a form suitable for high-frequency
analysis.

e) This circuit demonstrates the Miller effect. Briefly describe the Miller effect and
apply the Miller transformation to the capacitor Cμ1.

f) Calculate the equivalent resistance facing each of the hybrid-π capacitors using the
open-circuit time constant method.

g) Calculate the upper 3dB frequency of the amplifier

  4
QUESTION 2

The circuit in Figure 2 is a modified version of the differential amplifier where a resistor RG
is inserted. RG serves as a means of adjusting the gain of the amplifier.

(a) Show that the gain of the amplifier, assuming an ideal operational amplifier, is
given by

      2   1  

{Hint: The virtual short circuit at the op-amp input causes the current through the R1
resistors to be (vid/2R1)}

(b) In the non-ideal case, the op-amp has the following DC imperfections:
Input bias current: IB = 80nA at room temperature
Input offset current: Iio = ±4nA at room temperature
Input offset voltage: Vio = ±2mV at room temperature

Calculate the worst-case output offset voltage at room temperature by first

calculating the output offset voltage due to Vio and then the output offset voltage
due to Iio

R2
R2 R2
RG
R1
+
V id
- +
R1 Vo

-
R R
2 2

Figure 2

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