SEMICONDUCTOR 2SA1943BL Series RoHS

RoHS
Nell High Power Products

Silicon PNP triple diffusion planar transistor

-15A/-230V/150W

20.00±0.20 5.00

18.00 3.00
ø3.30±0.20

6.00
4.00
2.00
9.00
26.00
TO-3PL 3.00

2.50
2.50

20.50
(typ.)

FEATURES
High breakdown voltage, V CEO = -230V (min)
Complementary to 2SC5200BL 1.00
0.60
(typ.)
TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05 3.20

heat sink with one screw

1 2 3

APPLICATIONS
Suitable for use in 100W high fidelity audio
amplifier’s output stage 1. BASE C

2. COLLECTOR (HEAT SINK)

B
3. EMITTER

E PNP
All dimensions in millimeters

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector to base voltage -230

V CEO Collector to emitter voltage -230 V

V EBO Emitter to base voltage -5

I CP Peak collector current t p ≤ 5 ms -30

IC Collector current -15 A

IB Base current -1.5

PC Collector power dissipation T C = 25°C 150 W

Tj Junction temperature 150

ºC
T stg Storage temperature -55 to 150

THERMAL CHARACTERISTICS (TC = 25°C)

SYMBOL PARAMETER VALUE UNIT

Rth(j-c) Maximum thermal resistance, junction to case 1.10 ºC/W

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 SEMICONDUCTOR 2SA1943BL Series RoHS
RoHS
Nell High Power Products

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

VALUE
SYMBOL PARAMETER CONDITIONS UNIT
MIN. TYP. MAX.

ICBO Collector cutoff current V CBO = -230V, l E = 0 -5.0

µA
I EBO Emitter cutoff current V EBO = -5V, l C = 0 -5.0

V (BR)CEO Collector to emitter breakdown voltage l CEO = -50mA, I B = 0 -230

V CBO Collector to base voltage l CBO = -100 µA -230 V

V EBO Emitter to base voltage l EBO = -100 µA -5

Rank-R 55 110
h FE 1 V CE = -5V, I C = -1A
Rank-O 80 160
Forward current transfer ratio
(DC current gain)
h FE 2 V CE = -5V, I C = -7A 35 60

V CE(sat) Collector to emitter saturation voltage l C = -8A, I B = -0.8A -1.5 -3.0

V
V BE Base to emitter voltage V CE = -5V, I C = -7A -1.0 -1.5

Transition frequency
fT V CE = -5V, I C = -1A 30 MHz
(Gain-Bandwidth product)

C ob Collector output capacitance V CB = -10V, I E = 0, f = 1MHz 360 pF

ORDERING INFORMATION SCHEME

2SA 1943 BL - R

Transistor series
PNP Type

Current & Voltage rating, IC & VCEO

-15A / -230V

Package type
BL = TO-3PL

DC current gain rank, hFE1

R = 55 ~ 110
O = 80 ~ 160

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 SEMICONDUCTOR 2SA1943BL Series RoHS
RoHS
Nell High Power Products

Fig.1 I C - V CE Fig.2 V CE (sat) - I C

-20
Common emitter Common emitter
T C = 25°C
-3 I C / I B = 10
Collector current, l C (A)

-16
00

Collector-emitter saturation
-800 -6 -1
0
- 0
4

voltace, V CE (Sat) (V)

-12 -250 -200
-0.3
-150 T C =100°C

T C = -25°C
-8 -100
-0.1 T C = 25°C

-50
-4 -40
-30
-20
I B =-10mA
0
0 -2 -4 -6 -8 -10 -0.01 -0.1 -1 -10 -100

Collector-emitter voltage, V CE (V) Collector current, l C (A)

Fig.3 I C -V BE Fig.4 DC current gain

-20
Common emitter 300
V CE = -5V T C = 100°C
-16
Collector current, I C (A)

T C = 25°C
DC current gain, h FE

100
T C = -25°C

-12
30
T C = 100°C

-8 10

-4 T C = 25°C 3
Common emitter
T C = -25°C
V CE = -5V
0 1
0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.1 -1 -10 -100

Base-emitter voltage, V BE (V) Collector current, l C (A)

Fig.5 Safe operating area

-50
l C max (pulsed)*
-30 1 ms*
l C max (continuous) 10 ms*
Collector current, l C (A)

-10 DC operation
T C = 25°C
-5
-3
100 ms*
-1
-0.5
-0.3
* Single nonrepetitive
pulse T C = 25°C
-0.1 Curves must be derated
linearly with increase in V CEO
-0.05 temperature. max.
-0.03
-3 -10 -30 -100 -300

Collector-Emitter voltage, V CE (V)

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