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SEMICONDUCTOR TECHNICAL DATA by 2N5400/D

  

PNP Silicon

*Motorola Preferred Device

COLLECTOR
3

2
BASE

1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating Symbol 2N5400 2N5401 Unit CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 120 150 Vdc TO–92 (TO–226AA)

Collector – Base Voltage VCBO 130 160 Vdc

Emitter – Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N5400 120 —
2N5401 150 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 mAdc, IE = 0) 2N5400 130 —
2N5401 160 —
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 100 Vdc, IE = 0) 2N5400 — 100 nAdc
(VCB = 120 Vdc, IE = 0) 2N5401 — 50
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5400 — 100 µAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401 — 50
Emitter Cutoff Current IEBO — 50 nAdc
(VEB = 3.0 Vdc, IC = 0)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5400 30 —
2N5401 50 —

(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5400 40 180

2N5401 60 240

(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5400 40 —

2N5401 50 —
Collector – Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.5
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) — 1.0
(IC = 50 mAdc, IB = 5.0 mAdc) — 1.0

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N5400 100 400
2N5401 100 300
Output Capacitance Cobo — 6.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N5400 30 200
2N5401 40 200
Noise Figure NF — 8.0 dB
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
200

150
h FE, CURRENT GAIN TJ = 125°C

100
25°C
70

50

– 55°C
30 VCE = – 1.0 V
VCE = – 5.0 V

20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA 10 mA 30 mA 100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

103
VCE = 30 V
102
IC, COLLECTOR CURRENT ( µA)

IC = ICES
101
TJ = 125°C
100
75°C
10–1
REVERSE FORWARD
10–2 25°C

10–3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VBE, BASE–EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Cut–Off Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 
1.0 2.5
TJ = 25°C TJ = – 55°C to 135°C

θV, TEMPERATURE COEFFICIENT (mV/ °C)

0.9 2.0
0.8 1.5
V, VOLTAGE (VOLTS)

0.7 1.0
VBE(sat) @ IC/IB = 10
0.6 0.5
θVC for VCE(sat)
0.5 0
0.4 –0.5
0.3 –1.0
0.2 VCE(sat) @ IC/IB = 10 –1.5
θVB for VBE(sat)
0.1 –2.0
0 –2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages Figure 5. Temperature Coefficients

100
70 TJ = 25°C
VBB VCC 50
+ 8.8 V –30 V
30

C, CAPACITANCE (pF)
10.2 V
20 Cibo
100 3.0 k RC
Vin
Vout 10
10 µs 0.25 µF RB 7.0
INPUT PULSE 5.0 Cobo
5.1 k
tr, tf ≤ 10 ns Vin 100 1N914 3.0
DUTY CYCLE = 1.0% 2.0

1.0
Values Shown are for IC @ 10 mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit Figure 7. Capacitances

1000 2000
700 IC/IB = 10
TJ = 25°C tr @ VCC = 120 V 1000
500 IC/IB = 10 tf @ VCC = 120 V
700 TJ = 25°C
300
tr @ VCC = 30 V 500
200
tf @ VCC = 30 V
t, TIME (ns)

t, TIME (ns)

300
100 200
70 ts @ VCC = 120 V
50 100
70
30
50
20 td @ VBE(off) = 1.0 V
VCC = 120 V 30
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 8. Turn–On Time Figure 9. Turn–Off Time

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

 

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6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 
◊ 2N5400/D