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D4 D4
SWITCHES SHOWN FOR A LOGIC 1 INPUT SWITCHES SHOWN FOR A LOGIC 1 INPUT SWITCHES SHOWN FOR A LOGIC 1 INPUT
Rev. C
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ADG411/ADG412/ADG413
TABLE OF CONTENTS
Specifications..................................................................................... 3 Typical Performance Characteristics ..............................................7
REVISION HISTORY
11/04—Rev. B to Rev. C
Format Updated..................................................................Universal
Change to Package Drawing (Figure 23)..................................... 13
Changes to Ordering Guide .......................................................... 14
7/04—Rev. A to Rev. B
Rev. C | Page 2 of 16
ADG411/ADG412/ADG413
SPECIFICATIONS
DUAL SUPPLY
VDD = 15 V ± 10%, VSS = –15 V ± 10%, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.1
Table 1.
B Version T Version
Parameter +25°C −40°C to +85°C +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS VDD to VSS V
RON 25 25 Ω typ VD = ±8.5 V, IS = −10 mA;
35 45 35 45 Ω max VDD = +13.5 V, VSS = −13.5 V
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ VD = +15.5 V/−15.5 V,
VS = −15.5 V/+15.5 V;
±0.25 ±0.25 ±0.25 ±20 nA max Figure 15
Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ VD = +15.5 V/−15.5 V,
VS = −15.5 V/+15.5 V;
±0.25 ±5 ±0.25 ±20 nA max Figure 15
Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VD = VS = +15.5 V/−15.5 V;
±0.4 ±10 ±0.4 ± 40 nA max Figure 16
DIGITAL INPUTS
Input High Voltage, VINH 2.4 2.4 V min
Input Low Voltage, VINL 0.8 0.8 V max
Input Current
IINL or IINH 0.005 0.005 µA typ VIN = VINL or VINH
±0.5 ±0.5 µA max
DYNAMIC CHARACTERISTICS2
tON 110 110 ns typ RL = 300 Ω, CL = 35 pF;
175 175 ns max VS = ±10 V; Figure 17
tOFF 100 100 ns typ RL = 300 Ω, CL = 35 pF;
145 145 ns max VS = ±10 V; Figure 17
Break-Before-Make Time Delay, 25 25 ns typ RL = 300 Ω, CL = 35 pF;
tD (ADG413 Only) VS1 = VS2 = 10 V; Figure 18
Charge Injection 5 5 pC typ VS = 0 V, RS = 0 Ω, CL = 10 nF;
Figure 19
OFF Isolation 68 68 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Figure 20
Channel-to-Channel Crosstalk 85 85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Figure 21
CS (OFF) 9 9 pF typ f = 1 MHz
CD (OFF) 9 9 pF typ f = 1 MHz
CD, CS (ON) 35 35 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V;
Digital inputs = 0 V or 5 V
IDD 0.0001 0.0001 µA typ
1 5 1 5 µA max
ISS 0.0001 0.0001 µA typ
1 5 1 5 µA max
IL 0.0001 0.0001 µA typ
1 5 1 5 µA max
1
Temperature ranges are as follows: B versions: −40°C to +85°C; T versions: −55°C to +125°C.
2
Guaranteed by design; not subject to production test.
Rev. C | Page 3 of 16
ADG411/ADG412/ADG413
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.1
Table 2.
B Version T Version
Parameter +25°C −40°C to + 85°C +25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SIGNAL RANGE 0 V to VDD 0 V to VDD V
RON 40 40 Ω typ 0 < VD = 8.5 V, IS = −10 mA;
80 100 80 100 Ω max VDD = 10.8 V
LEAKAGE CURRENTS VDD = 13.2 V
Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V;
±0.25 ±5 ±0.25 ±20 nA max Figure 15
Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ VD = 12.2 V/1 V, VS = 1 V/12.2 V;
±0.25 ±5 ±0.25 ±20 nA max Figure 15
Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VD = VS = 12.2 V/1 V;
±0.4 ±10 ±0.4 ±40 nA max Figure 16
DIGITAL INPUTS
Input High Voltage, VINH 2.4 2.4 V min
Input Low Voltage, VINL 0.8 0.8 V max
Input Current
IINL or IINH 0.005 0.005 µA typ VIN = VINL or VINH
±0.5 ±0.5 µA max
DYNAMIC CHARACTERISTICS2
tON 175 175 ns typ RL = 300 Ω, CL = 35 pF;
250 250 ns max VS = 8 V; Figure 17
tOFF 95 95 ns typ RL = 300 Ω, CL = 35 pF;
125 125 ns max VS = 8 V; Figure 17
Break-Before-Make Time 25 25 ns typ RL = 300 Ω, CL = 35 pF;
Delay, tD (ADG413 Only) VS1 = VS2 = +10 V; Figure 18
Charge Injection 25 25 pC typ VS = 0 V, RS = 0 Ω, CL = 10 nF;
Figure 19
OFF Isolation 68 68 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Figure 20
Channel-to-Channel Crosstalk 85 85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Figure 21
CS (OFF) 9 9 pF typ f = 1 MHz
CD (OFF) 9 9 pF typ f = 1 MHz
CD, CS (ON) 35 35 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V;
Digital inputs = 0 V or 5 V
IDD 0.0001 0.0001 µA typ
1 5 1 5 µA max
IL 0.0001 0.0001 µA typ
1 5 1 5 µA max VL = 5.25 V
1
Temperature ranges are as follows: B versions:−40°C to +85°C; T versions: −55°C to +125°C.
2
Guaranteed by design; not subject to production test.
Rev. C | Page 4 of 16
ADG411/ADG412/ADG413
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. C | Page 5 of 16
ADG411/ADG412/ADG413
IN1 1 16 IN2
D1 2 15 D2
ADG411/
S1 3 14 S2
ADG412/
VSS 4 ADG413 13 VDD
TOP VIEW
GND 5 (Not to Scale) 12 VL
S4 6 11 S3
D4 7 10 D3
00024-004
IN4 8 9 IN3
Rev. C | Page 6 of 16
ADG411/ADG412/ADG413
RON (Ω)
VDD = +10V VSS = 0V
VSS = –10V VDD = +12V
VSS = –12V
20 20
10 10
VDD = +15V VDD = +15V
00024-005
00024-008
VSS = –15V VSS = 0V
0 0
–20 –10 0 10 20 0 5 10 15 20
VD OR VS – DRAIN OR SOURCE VOLTAGE (V) VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
Figure 5. On Resistance as a Function of VD (VS) Dual Supplies Figure 8. On Resistance as a Function of VD (VS) Single Supply
50 100m
VDD = +15V VDD = +15V 4 SW
VSS = –15V VSS = –15V 1 SW
VL = +5V VL = +5V
10m
40
1m
30 I+, I–
ISUPPLY (A)
RON (Ω)
100µ
20 125°C
85°C 10µ
25°C IL
10
1µ
00024-006
00024-009
0 100n
–20 –15 –10 –5 0 5 10 15 20 10 100 1k 10k 100k 1M 10M
VD OR VS – DRAIN OR SOURCE VOLTAGE (V) FREQUENCY (Hz)
Figure 6. On Resistance as a Function of VD (VS) for Different Temperatures Figure 9. Supply Current vs. Input Switching Frequency
0.04
10 VDD = +15V
VDD = +15V VSS = –15V
VSS = –15V TA = 25°C ID (ON)
VL = +5V VL = +5V
0.02
LEAKAGE CURRENT (nA)
1
LEAKAGE CURRENT (nA)
VD = ±15V IS (OFF)
IS (OFF)
VS = ±15V
0
0.1
ID (OFF) ID (OFF)
ID (ON)
–0.02
0.01
00024-010
00024-007
–0.04
0.001 –20 –10 0 10 20
100 1k 10k 100k 1M 100M
VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
FREQUENCY (Hz)
Figure 7. Leakage Currents as a Function of Temperature Figure 10. Leakage Currents as a Function of VD (VS)
Rev. C | Page 7 of 16
ADG411/ADG412/ADG413
120 110
VDD = +15V VDD = +15V
VSS = –15V VSS = –15V
VL = +5V VL = +5V
100
100
OFF ISOLATION (dB)
CROSSTALK (dB)
90
80
80
60
70
00024-011
00024-012
40 60
100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M 10M
FREQUENCY (Hz) FREQUENCY (Hz)
Figure 11. Off Isolation vs. Frequency Figure 12. Crosstalk vs. Frequency
Rev. C | Page 8 of 16
ADG411/ADG412/ADG413
TERMINOLOGY
RON tON
Ohmic resistance between D and S. Delay between applying the digital control input and the output
switching on.
IS (OFF)
tOFF
Source leakage current with the switch OFF.
Delay between applying the digital control input and the output
ID (OFF) switching off.
Drain leakage current with the switch OFF. tD
ID, IS (ON) OFF time or ON time measured between the 90% points of
Channel leakage current with the switch ON. both switches, when switching from one address state to
another.
VD (VS)
Crosstalk
Analog voltage on terminals D, S.
A measure of unwanted signal which is coupled through from
CS (OFF) one channel to another as a result of parasitic capacitance.
CD, CS (ON) A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
ON switch capacitance.
Rev. C | Page 9 of 16
ADG411/ADG412/ADG413
APPLICATIONS
Figure 13 illustrates a precise, fast, sample-and-hold circuit. An the hold time glitch while optimizing the acquisition time.
AD845 is used as the input buffer while the output operational Using the illustrated op amps and component values, the
amplifier is an AD711. During the track mode, SW1 is closed pedestal error has a maximum value of 5 mV over the ±10 V
and the output VOUT follows the input signal VIN. In the hold input range. Both the acquisition and settling times are 850 ns.
mode, SW1 is opened and the signal is held by the hold +15V +5V
capacitor CH. 2200pF
+15V
Due to switch and capacitor leakage, the voltage on the hold SW1
+15V S D CC
capacitor decreases with time. The ADG411/ADG412/ADG413 VIN SW2
RC
1000pF AD711 VOUT
75Ω
minimizes this droop due to its low leakage specifications. The AD845
S D
CH
droop rate is further minimized by the use of a polystyrene 2200pF
–15V
–15V
hold capacitor. The droop rate for the circuit shown is typically ADG411
30 µV/µs. ADG412
ADG413
00024-013
A second switch, SW2, which operates in parallel with SW1, is
–15V
included in this circuit to reduce pedestal error. Since both
switches are at the same potential, they have a differential effect Figure 13. Fast, Accurate Sample-and-Hold
on the op amp AD711, which minimizes charge injection
effects. Pedestal error is also reduced by the compensation
network RC and CC. This compensation network also reduces
Rev. C | Page 10 of 16
ADG411/ADG412/ADG413
TEST CIRCUITS
IDS
V1
00024-014
00024-016
00024-015
VS RON = V1/IDS VS VD VS VD
Figure 14. On Resistance Figure 15. Off Leakage Figure 16. On Leakage
+15V +5V
0.1µF 0.1µF
3V
S D
VOUT 3V
RL CL VIN
ADG412 50% 50%
VS 300Ω 35pF
IN
90% 90%
GND VSS VOUT
00024-017
0.1µF
tON tOFF
–15V
+15V +5V
0.1µF 0.1µF
3V
0V
0.1µF tD tD
–15V
Rev. C | Page 11 of 16
ADG411/ADG412/ADG413
+15V +5V
VDD VL 3V
RS VOUT
S D VIN
CL
VS
IN 10nF
VOUT
VSS ∆VOUT
GND
QINJ = CL × ∆VOUT
00024-019
–15V
VDD VL VDD VL
S D 50Ω
S D
VOUT
RL
50Ω VIN1
VS VIN2
VS IN
VIN
VOUT D S
GND VSS NC
RL GND VSS
00024-020
00024-021
50Ω
0.1µF
CHANNEL-TO-CHANNEL
–15V 0.1µF CROSSTALK = 20 × LOG VS/VOUT
–15V
Figure 20. Off Isolation
Figure 21. Channel-to-Channel Crosstalk
Rev. C | Page 12 of 16
ADG411/ADG412/ADG413
OUTLINE DIMENSIONS
5.10
5.00
4.90
16 9
0.005 0.098 (2.49)
(0.13) MAX 0.310 (7.87) 4.50
MIN
16 9 0.220 (5.59) 6.40
4.40 BSC
PIN 1 4.30
1 8
1 8
0.060 (1.52)
0.200 (5.08) 0.320 (8.13)
0.840 (21.34) MAX 0.015 (0.38)
MAX 0.290 (7.37) PIN 1
0.150 (3.81) 1.20
MIN
0.015 (0.38) MAX
0.15 0.20
0.200 (5.08) 15° 0.008 (0.20)
0.05 0.09 0.75
0.125 (3.18) 0.100 0.070 (1.78) SEATING 0°
8° 0.60
(2.54) PLANE 0.30
0.023 (0.58) 0.030 (0.76) 0.65 0°
BSC 0.19 SEATING 0.45
0.014 (0.36) BSC
PLANE
COPLANARITY
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS 0.10
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MO-153AB
Figure 22. 16-Lead Ceramic Dual In-Line Package [CERDIP] Figure 24. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(Q-16) (RU-16)
Dimensions shown in inches and (millimeters) Dimensions shown in millimeters
0.785 (19.94)
0.765 (19.43)
0.295 (7.49)
0.745 (18.92)
0.285 (7.24)
10.00 (0.3937) 0.275 (6.99)
16 9
9.80 (0.3858)
1 8
16 9 0.325 (8.26)
4.00 (0.1575) 6.20 (0.2441) 0.100 (2.54)
0.310 (7.87)
3.80 (0.1496) 1 8 5.80 (0.2283) BSC
0.015 (0.38) 0.300 (7.62) 0.150 (3.81)
MIN 0.135 (3.43)
0.180 (4.57) 0.120 (3.05)
1.27 (0.0500) 1.75 (0.0689) 0.50 (0.0197) MAX
BSC 1.35 (0.0531) × 45°
0.25 (0.0098)
0.25 (0.0098) 0.150 (3.81)
0.10 (0.0039) 0.130 (3.30) SEATING 0.015 (0.38)
8° 0.110 (2.79) 0.022 (0.56) 0.060 (1.52) PLANE 0.010 (0.25)
0.51 (0.0201) SEATING 0.018 (0.46) 0.050 (1.27)
COPLANARITY 0.25 (0.0098) 0° 1.27 (0.0500) 0.008 (0.20)
0.10 0.31 (0.0122) PLANE 0.014 (0.36) 0.045 (1.14)
0.17 (0.0067) 0.40 (0.0157)
Rev. C | Page 13 of 16
ADG411/ADG412/ADG413
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADG411BN −40°C to +85°C P-DIP N-16
ADG411BR −40°C to +85°C SOIC R-16A
ADG411BR-REEL −40°C to +85°C SOIC R-16A
ADG411BR-REEL7 −40°C to +85°C SOIC R-16A
ADG411BRZ1 −40°C to +85°C SOIC R-16A
ADG411BRZ-REEL1 −40°C to +85°C SOIC R-16A
ADG411BRZ-REEL71 −40°C to +85°C SOIC R-16A
ADG411BRU −40°C to +85°C TSSOP RU-16
ADG411BRU-REEL −40°C to +85°C TSSOP RU-16
ADG411BRU-REEL7 −40°C to +85°C TSSOP RU-16
ADG411BRUZ1 −40°C to +85°C TSSOP RU-16
ADG411BRUZ-REEL1 −40°C to +85°C TSSOP RU-16
ADG411BRUZ-REEL71 −40°C to +85°C TSSOP RU-16
ADG411TQ −55°C to +125°C CERDIP Q-16
ADG411BCHIPS DIE
ADG412BN −40°C to +85°C P-DIP N-16
ADG412BR −40°C to +85°C SOIC R-16A
ADG412BR-REEL −40°C to +85°C SOIC R-16A
ADG412BR-REEL7 −40°C to +85°C SOIC R-16A
ADG412BRZ1 −40°C to +85°C SOIC R-16A
ADG412BRZ-REEL1 −40°C to +85°C SOIC R-16A
ADG412BRZ-REEL71 −40°C to +85°C SOIC R-16A
ADG412BRU −40°C to +85°C TSSOP RU-16
ADG412BRU-REEL −40°C to +85°C TSSOP RU-16
ADG412BRU-REEL7 −40°C to +85°C TSSOP RU-16
ADG412BRUZ1 −40°C to +85°C TSSOP RU-16
ADG412BRUZ-REEL1 −40°C to +85°C TSSOP RU-16
ADG412BRUZ-REEL71 −40°C to +85°C TSSOP RU-16
ADG412TQ −55°C to +125°C CERDIP Q-16
ADG412TCHIPS DIE
ADG413BN −40°C to +85°C P-DIP N-16
ADG413BR −40°C to +85°C SOIC R-16A
ADG413BR-REEL −40°C to +85°C SOIC R-16A
ADG413BRZ1 −40°C to +85°C SOIC R-16A
ADG413BRZ-REEL1 −40°C to +85°C SOIC R-16A
ADG413BRUZ1 −40°C to +85°C TSSOP RU-16
ADG413BRUZ-500RL71 −40°C to +85°C TSSOP RU-16
ADG413BRUZ-REEL1 −40°C to +85°C TSSOP RU-16
ADG413BRUZ-REEL71 −40°C to +85°C TSSOP RU-16
1
Z = Pb-free part.
Rev. C | Page 14 of 16
ADG411/ADG412/ADG413
NOTES
Rev. C | Page 15 of 16
ADG411/ADG412/ADG413
NOTES
Rev. C | Page 16 of 16