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■ Gate Charge (Typical 0.5nC) 2. Gate { ●
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1
2
3
Thermal Characteristics
Value
Symbol Parameter Units
Min. Typ. Max.
RθJA Thermal Resistance, Junction-to-Ambient - - 312.5 °C/W
Dynamic Characteristics
Ciss Input Capacitance - 20 25
Coss Output Capacitance - 11 14 pF
VGS =0 V, VDS =25V, f = 1MHz
Crss Reverse Transfer Capacitance - 3 4
Dynamic Characteristics
td(on) Turn-on Delay Time - 4 18
tr Rise Time VDD =30V, ID =200mA, RG =50Ω - 2.5 15
VGS = 10 V ns
td(off) Turn-off Delay Time - 17 44
(Note 2,3)
tf Fall Time - 7 24
Qg Total Gate Charge - 0.5 0.65
VDS =30V, VGS =4.5V, ID =200mA
Qgs Gate-Source Charge - 0.15 - nC
Qgd Gate-Drain Charge(Miller Charge) (Note 2,3) - 0.2 -
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
2/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
VGS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
0
4.0 V 10
0
3.5 V
10 Bottom : 3.0 V
o
150 C
o
※ Notes : o
-55 C ※ Notes :
25 C 1. VDS = 10V
1. 250µ s Pulse Test
2. TC = 25℃ 2. 250µ s Pulse Test
-1
10
0
10 10
1 0 2 4 6 8 10
0
2.5 10
VGS = 4.5V
VGS = 10V
RDS(ON),
2.0
150℃
1.5 25℃
※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µ s Pulse Test
-1
1.0 10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
50 12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
10
40
VGS, Gate-Source Voltage [V]
VDS = 30V
8
Capacitance [pF]
※ Notes :
30 1. VGS = 0V
VDS = 48V
2. f=1MHz
Ciss 6
20
Coss 4
10
2
Crss
※ Note : ID = 200 mA
0 0
0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2
3/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Drain-Source On-Resistance
2.0
1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)
1.5
1.0
1.0
0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = 250 µ A 1. VGS = 10 V
2. ID = 500 mA
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
4/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF V
4.5V
VDS
VGS Qgs Qgd
DUT
1mA
Charge
RL VDS
VDS 90%
VDD
( 0.5 rated V DS )
10%
10V
V Vin
RG DUT
Pulse
td(on) tr td(off)
Generator tf
t on t off
5/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
TO-92 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 4.2 0.165
B 3.7 0.146
E 0.4 0.016
G 0.45 0.017
H 2.54 0.100
I 2.54 0.100
A
E
1
D 2
1. Source
3
2. Gate
3. Drain
H J
I
6/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.