SHINDENGEN

Schottky Rectifiers (SBD) Dual

OUTLINE DIMENSIONS
D10SC4M Case : ITO-220 Unit : mm

40V 10A

FEATURES
● Tj150℃
● PRRSM avalanche guaranteed
● Fully Isolated Molding

APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office Equipment
● Telecommunication

RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -40∼150 ℃
Operating Junction Temperature Tj 150 ℃
Maximum Reverse Voltage VRM 40 V
Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 45 V
Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=123℃ 10 A
Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ 100 A
Repetitive Peak Surge Reverse Power PRRSM Pulse width 10μs, Rating of per diode, Tj= 25℃ 330 W
Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 kV
Mounting Torque TOR (Recommended torque：0.3N･m) 0.5 N･m

●Electrical Characteristics (If not specified Tc=25℃)

Item Symbol Conditions Ratings Unit
Forward Voltage VF IF=5A, Pulse measurement, Rating of per diode Max.0.55 V
Reverse Current IR VR=V RM, Pulse measurement, Rating of per diode Max. 3.5 mA
Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode Typ.180 pF
θjc junction to case Max.3.3
Thermal Resistance θcf case to heatsink, Mounting torque=0.5N･m Max.1.5 ℃/W
θjf junction to heatsink Max.4.8

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

 D10SC4M Forward Voltage

10
Forward Current IF [A]

Tc=150°C [MAX]
Tc=150°C [TYP]

Tc=25°C [MAX]
Tc=25°C [TYP]
1

Pulse measurement per diode

0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Forward Voltage VF [V]

 D10SC4M Junction Capacitance

f=1MHz
Tc=25°C
TYP
per diode
1000

Junction Capacitance Cj [pF]

100

0.1 1 10

Reverse Voltage VR [V]

 D10SC4M Reverse Current
1000

Tc=150°C [MAX]

100
Tc=150°C [TYP]
Reverse Current IR [mA]

Tc=125°C [TYP]
10

Tc=100°C [TYP]

1 Tc=75°C [TYP]

0.1

Pulse measurement per diode

0.01
0 5 10 15 20 25 30 35 40

Reverse Voltage VR [V]

 D10SC4M Reverse Power Dissipation
20

DC
Reverse Power Dissipation PR [W]

D=0.05

15 0.1
0.2

0.3

10
0.5

5
SIN
0.8

0
0 10 20 30 40 50

Reverse Voltage VR [V]

Tj = 150°C 0
VR

tp
D=tp /T
T
 D10SC4M Forward Power Dissipation
10

DC
D=0.8
Forward Power Dissipation PF [W]

8
0.5
SIN
0.3
0.2
6 0.1
0.05

0
0 2 4 6 8 10 12 14 16

Average Rectified Forward Current IO [A]

Tj = 150°C
IO
0
tp
D=tp /T
T
 D10SC4M Derating Curve
20
Average Rectified Forward Current IO [A]

DC
15
D=0.8

0.5
SIN
10
0.3

0.2

0.1
5
0.05

0
0 20 40 60 80 100 120 140 160

Case Temperature Tc [°C]

VR = 20V
IO
0
0
VR

tp
D=tp /T
T
 D10SC4M Derating Curve
20
Average Rectified Forward Current IO [A]

DC
15
D=0.8

0.5
SIN
10
0.3

0.2

0.1
5
0.05

0
0 20 40 60 80 100 120 140 160

Heatsink Temperature Tf [°C]

VR = 20V
IO
0
0
VR

tp
D=tp /T
T
 D10SC4M Peak Surge Forward Capability
200

IFSM
10ms 10ms
1 cycle
non-repetitive,
sine wave,
150 Tj=125°C before
surge current is applied
Peak Surge Forward Current IFSM [A]

100

50

0
1 2 5 10 20 50 100

Number of Cycles [cycles]

 SBD Repetitive Surge Reverse Power Derating Curve
120

100
PRRSM Derating [%]

80

60

40

20

0
0 50 100 150

Junction Temperature Tj [°C]

IRP

IR VR
VRP
0.5IRP

0
tp

PRRSM = IRP × VRP

 SBD Repetitive Surge Reverse Power Capability
10
PRRSM(t p) / PRRSM(t p=10µs) Ratio

0.1
1 10 100

Pulse Width t p [µs]

IRP

IR VR
VRP
0.5IRP

0
tp

PRRSM = IRP × VRP