2SC3074

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3074
High Current Switching Applications
Unit: mm

· Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)

· High speed switching time: tstg = 1.0 µs (typ)
· Complementary to 2SA1244

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 60 V

Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 5 A
Base current IB 1 A

Collector power Ta = 25°C 1.0

PC W
dissipation Tc = 25°C 20
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C JEDEC ―
JEITA ―
TOSHIBA 2-7B1A

Weight: 0.36 g (typ.)

JEDEC ―
JEITA ―
TOSHIBA 2-7J1A

Weight: 0.36 g (typ.)

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 1 µA

Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V
hFE (1)
VCE = 1 V, IC = 1 A 70 ― 240
DC current gain (Note)
hFE (2) VCE = 1 V, IC = 3 A 30 ― ―
Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A ― 0.2 0.4 V
Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A ― 0.9 1.2 V
Transition frequency fT VCE = 4 V, IC = 1 A ― 120 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF

Turn-on time ton OUTPUT ― 0.1 ―

20 µs IB1
INPUT

10 Ω
IB1

Switching time Storage time tstg IB2 ― 1.0 ― µs

IB2
VCC = 30 V

Fall time tf IB1 = −IB2 = 0.15 A, ― 0.1 ―

DUTY CYCLE ≤ 1%

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

C3074 Product No.

Lot No.

hFE Classification

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

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IC – VCE VCE – IC
10 1.2
Common emitter
Common emitter
Tc = 100°C
100 90 1.0 Tc = 25°C
8 80
(A)

Collector-emitter voltage
70 IB = 10 mA
60 0.8
IC

20 40 60 80 100
6 50

VCE (V)
Collector current

40 150
0.6

4 30 200

0.4 300
20
500
2
IB = 10 mA 0.2
0

0 0
0 2 4 6 8 10 12 0 1 2 3 4 5 6 7

Collector-emitter voltage VCE (V) Collector current IC (A)

VCE – IC VCE – IC
1.2

1.0 Common emitter Common emitter

(V)

(V)

Tc = 100°C 1.0 Tc = −55°C

VCE

VCE

0.8
20 40 60 80 100 IB = 20 mA
0.8
40 120 160 200
Collector-emitter voltage

120
Collector-emitter voltage

IB = 10 mA
0.6
0.6

150
0.4 250
200 0.4 300
500 500

0.2 0.2

0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7

Collector current IC (A) Collector current IC (A)

hFE – IC VCE (sat) – IC

1000 1
Common emitter Common emitter
Collector-emitter saturation voltage

500 VCE = 1 V 0.5 IC/IB = 20

hFE

300 0.3
Tc = 100°C
VCE (sat) (V)

Tc = −55°C
DC current gain

25 25
100 0.1

50 −55 0.05
100
30 0.03

10 0.01
0.03 0.1 0.3 1 3 10 0.03 0.1 0.3 1 3 10

Collector current IC (A) Collector current IC (A)

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VBE (sat) – IC IC – VBE

10 5

Common emitter Common emitter

Base-emitter saturation voltage

5 VCE = 1 V
IC/IB = 20
4
3

(A)
VBE (sat) (V)

IC
3
1 Tc = −55°C

Collector current
Tc = 100°C −55
0.5
2 25
25
0.3 100

0.1
0.03 0.1 0.3 1 3 10
0
Collector current IC (A) 0 0.4 0.8 1.2 1.6 2.0 2.4

Base-emitter voltage VBE (V)

Safe Operating Area PC – Ta

10 28
IC max (pulsed)* 1 ms* (1) Tc = Ta infinite heat sink
5
PC (W)

IC max (continuous) 24
(2) Ceramic substrate
3 10 ms*
(1) 50 × 50 × 0.8 mm
20
(A)

DC operation (3) No heat sink

Collector power dissipation

1 Tc = 25°C
IC

16
0.5
Collector current

0.3 12

8
0.1
*: Single nonrepetitive pulse
0.05 Tc = 25°C 4 (2)
0.03 Curves must be derated (3)
VCEO max
linearly with increase in 0
0 20 40 60 80 100 120 140 160
temperature.
0.01
0.1 0.3 1 3 10 30 100 Ambient temperature Ta (°C)

Collector-emitter voltage VCE (V)

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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