Comparison between 3 principles of busbar protection

type High Impedance HZ low Impedance LZ Very low Impedance

middle Impédance MZ
Static technology Numerical technology
Historic 1980 2000

Equipment Mx3DV23A + X2DV23RI MBCZ (800 projects) P740 (1000 projects)

P122 + Rstab + Métrosil DIFB (300 projects) P746 (100 projects)
P721 + P791 DIFBCL (70 projects)
P723 + P793
Comparison between 3 principles of busbar protection

type High Impedance HZ low Impedance LZ Very low Impedance

Medium Impedance MZ
Static technology Numerical technology
Scheme

RL IBias I1 I2
1/1 1/0,5

1000/1 Id 500/1 1000/1 PU PU 500/5

RST
Metrosil FO FO

Rstab
ΣI
I>
= Rd CU
Id
Comparison between 3 principles of busbar protection

type High Impedance HZ low Impedance LZ Very low Impedance

Medium Impédance MZ
Static technology Numerical technology
Tripping
characteristic

Idif Idif Idif

Tripping area
Tripping area Tripping area

I> %=0,4 %=0,6

Id>2 Id>2

Ibias Ibias

Typically trip 35ms 8ms 13ms for P740

time 15 ms for P746
Comparison between 3 principles of busbar protection

type High Impedance HZ low Impedance LZ Very low Impedance

Medium Impédance MZ
Static technology Numerical technology

Stability Due to stability resistance Due to stability resistance Slope characteristic

+
+ Special software algorithm
Slope characteristic -Saturation for P740
-Phase directionnel
comparison for P746

Mesure Centralised Centralised Centralised / Distributed

Calcul Centralised Centralised Centralised or Distributed P740

Centralised P746

Decision Centralised Centralised Centralised or Distributed P740

Centralised P746
Protected zone 1 zone max 6 zones max 8 zones max
Comparison between 3 principles of busbar protection

type High Impedance HZ low Impedance LZ Very low Impedance

Medium Impédance MZ
Static technology Numerical technology

CT Type •Class X (or TPX) •Class TPY •Class TPY

mandatory • differents ratio for the •differents ratio for the bays
•Same ratio for the bays bays
•independant core for the • none independant core •none independant core for the
other protections for the other protections other protections
Vk > 2ISCC (RCT + 2RB) P > RB / Rd + RB Vk > ISCC(RCT + 2RB) P746
Vk > 0.5ISCC(RCT + 2RB) P741
with with with
Vk = CT knee point
ISCC = max short circuit RB = loop burden Vk = CT knee point
in the CT Rd = differential resistance ISCC = max short circuit in the CT
RCT = secondary CT
resistance
RB = loop burden RCT = secondary CT resistance
RB = loop burden
Comparison between 3 principles of busbar protection
type High Impedance HZ low Impedance LZ
Medium Impédance MZ
Static technology
Advantages • very simple •CT class TPY can be used
characteristic: (MAX I) •TC ratio different can be
•Very cheap for used
equipment •1 core for many protections
can be used
• breaker failure protection
can be implemented
Disadvantages •CT classe X only •Auxiliary (interposing) CT
•TC ratio identics have to be used
•Calcul of stability •Calcul of differential
resistance and Métrosil resistance following
•Centralised only application
•Centralised only
Very low Impedance
Numerical technology
•CT class TPY can be used
•TC ratio different can be used
•1 core for many protections
can be used
•Low impedance
•Distributed mode can be used
•Dynamic topology
•8 zones max
•Numerical technology
•breaker failure protection can
be implemented