PD-97253A

2N7610T2
RADIATION HARDENED IRHLF77214
LOGIC LEVEL POWER MOSFET 250V, N-CHANNEL
THRU-HOLE (TO-39) TECHNOLOGY
™

Product Summary
Part Number Radiation Level RDS(on) ID
IRHLF77214 100K Rads (Si) 1.0Ω 3.3A
IRHLF73214 300K Rads (Si) 1.0Ω 3.3A

TO-39

International Rectifier’s R7TM Logic Level Power Features:

MOSFETs provide simple solution to interfacing n 5V CMOS and TTL Compatible
CMOS and TTL control circuits to power devices in
n Fast Switching
space and other radiation environments. The
n Single Event Effect (SEE) Hardened
threshold voltage remains within acceptable
n Low Total Gate Charge
operating limits over the full operating temperature
n Simple Drive Requirements
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout n Ease of Paralleling
immunity. n Hermetically Sealed
n Light Weight
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.

Absolute Maximum Ratings Pre-Irradiation

Parameter Units
ID @ VGS = 4.5V, TC=25°C Continuous Drain Current 3.3
ID @ VGS = 4.5V, TC=100°C Continuous Drain Current 2.1 A
IDM Pulsed Drain Current À 13.2
PD @ TC = 25°C Max. Power Dissipation 22.7 W
Linear Derating Factor 0.18 W/°C
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy Á 29 mJ
IAR Avalanche Current À 3.3 A
EAR Repetitive Avalanche Energy À 2.3 mJ
dv/dt Peak Diode Recovery dv/dt  3.29 V/ns
TJ Operating Junction -55 to 150
T STG Storage Temperature Range °C
Lead Temperature 300 (0.063in/1.6mm from case for 10s)
Weight 0.98 (Typical) g

For footnotes refer to the last page

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IRHLF77214, 2N7610T2 Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise specified)

Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 250µA
∆BV DSS /∆T J Temperature Coefficient of Breakdown — 0.22 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 1.0 Ω VGS = 4.5V, ID = 2.1A
Ã
Resistance
VGS(th) Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — -5.2 — mV/°C
gfs Forward Transconductance 2.5 — — S VDS = 10V, IDS = 2.1A Ã
IDSS Zero Gate Voltage Drain Current — — 1.0 VDS= 200V ,VGS= 0V
— — 10 µA VDS = 200V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 10V
nA
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -10V
Qg Total Gate Charge — — 18 VGS = 4.5V, ID = 3.3A
Q gs Gate-to-Source Charge — — 5.0 nC VDS = 125V
Q gd Gate-to-Drain (‘Miller’) Charge — — 12
td(on) Turn-On Delay Time — — 27 VDD = 125V, ID = 3.3A,
tr Rise Time — — 57 ns VGS = 4.5V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 45
tf Fall Time — — 55
LS + LD Total Inductance — 7.0 — Measured from Drain lead (6mm /0.25in
nH from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss Input Capacitance — 611 — VGS = 0V, VDS = 25V
C oss Output Capacitance — 62 — pF f = 1.0MHz
C rss Reverse Transfer Capacitance — 0.64 —
Rg Gate Resistance — 8.0 — Ω f = 1.0MHz, open drain

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — 3.3
A
ISM Pulse Source Current (Body Diode) À — — 13.2
VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 3.3A, VGS = 0V Ã
t rr Reverse Recovery Time — — 371 ns Tj = 25°C, IF = 3.3A, di/dt ≤ 100A/µs
Q RR Reverse Recovery Charge — — 1.05 µC VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 5.5 °C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page

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Radiation Characteristics
Pre-Irradiation IRHLF77214, 2N7610T2

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter Up to 300K Rads(Si)1 Units Test Conditions
Min Max
BVDSS Drain-to-Source Breakdown Voltage 250 — V VGS = 0V, ID = 250µA
VGS(th) Gate Threshold Voltage 1.0 2.0 VGS = VDS, ID = 250µA
IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 10V
IGSS Gate-to-Source Leakage Reverse — -100 VGS = -10V
IDSS Zero Gate Voltage Drain Current — 1.0 µA VDS= 200V, VGS= 0V
RDS(on) Static Drain-to-Source „
On-State Resistance (TO-39) — 1.0 Ω VGS = 4.5V, ID = 2.1A
VSD Diode Forward Voltage „ — 1.2 V VGS = 0V, ID = 3.3A
1. Part numbers IRHLF77214, IRHLF73214

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

LET Energy Range VDS (V)
2
(MeV/(mg/cm )) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -2V -4V -5V -6V -7V
38 ± 5% 300 ± 7.5% 38 ± 7.5% 250 250 250 250 250 250
62 ± 5% 355 ± 7.5% 33 ± 7.5% 250 250 250 250 250 -
85 ± 5% 380 ± 7.5% 29 ± 7.5% 250 250 250 250 - -

300
Bias VDS (Volts)

250
200 LET=38 ± 5%
150 LET=62 ± 5%
100 LET=85 ± 5%
50
0
0 -1 -2 -3 -4 -5 -6 -7
Bias VGS (Volts)

Fig a. Typical Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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 IRHLF77214, 2N7610T2 Pre-Irradiation

100 10
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

4.5V 4.5V
10 3.25V 3.25V
2.75V 2.75V
2.5V 2.5V
2.25V 2.25V
BOTTOM 2.0V BOTTOM 2.0V
1 1
2.0V

0.1
2.0V
60µs PULSE WIDTH
60µs PULSE WIDTH Tj = 150°C
Tj = 25°C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
ID = 3.3A
RDS(on) , Drain-to-Source On Resistance

2.0
ID, Drain-to-Source Current (A)

T J = 25°C

10
1.5
(Normalized)

T J = 150°C

1.0
1

0.5
VDS = 50V
15 VGS = 4.5V
60µs PULSE WIDTH
0.1 0.0
2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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Pre-Irradiation IRHLF77214, 2N7610T2

5 3.5

RDS(on), Drain-to -Source On Resistance ( Ω)

RDS(on), Drain-to -Source On Resistance (Ω)

4.5 ID = 3.3A
3
4

3.5
2.5 T J = 150°C
3

2.5 2
T J = 150°C
2
1.5
1.5 T J = 25°C
1
1
0.5 T J = 25°C
Vgs = 4.5V
0 0.5
2 4 6 8 10 12 0 1 2 3 4 5 6 7 8

VGS, Gate -to -Source Voltage (V) ID, Drain Current (A)

Fig 5. Typical On-Resistance Vs Fig 6. Typical On-Resistance Vs

Gate Voltage Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

315 2.5
ID = 1.0mA
305
VGS(th) Gate threshold Voltage (V)

2.0
295

1.5
285

275
1.0
ID = 50µA
265 ID = 250µA
ID = 1.0mA
0.5
255 ID = 150mA

245 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160

T J , Temperature ( °C ) T J , Temperature ( °C )

Fig 7 Typical Drain-to-Source Fig 8. Typical Threshold Voltage Vs

Breakdown Voltage Vs Temperature Temperature
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 IRHLF77214, 2N7610T2 Pre-Irradiation

1200 12
VGS = 0V, f = 1 MHz
ID = 3.3A VDS = 200V
C iss = C gs + Cgd, C ds SHORTED
VDS = 125V
1000 C rss = C gd 10

VGS, Gate-to-Source Voltage (V)

C oss = Cds + Cgd
VDS = 50V
C, Capacitance (pF)

800 8
Ciss
600 6

400 Coss 4

200 2
Crss FOR TEST CIRCUIT
SEE FIGURE 17
0 0
1 10 100 0 2 4 6 8 10 12 14 16 18 20 22 24
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100 3.5

3
ISD, Reverse Drain Current (A)

10
2.5
ID, Drain Current (A)

T J = 150°C
2
1
1.5
T J = 25°C

1
0.1

0.5
VGS = 0V
0.01 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150
VSD , Source-to-Drain Voltage (V) T C , Case Temperature (°C)

Fig 11. Typical Source-to-Drain Diode Fig 12. Maximum Drain Current Vs.
Forward Voltage Case Temperature
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 Pre-Irradiation IRHLF77214, 2N7610T2

100 60

EAS , Single Pulse Avalanche Energy (mJ)

OPERATION IN THIS AREA LIMITED ID
BY RDS(on)
50 TOP 1.5A
ID, Drain-to-Source Current (A)

10 2.1A
BOTTOM 3.3A
40

100µs
1 30

1ms
20
0.1
10ms
Tc = 25°C DC 10
Tj = 150°C
Single Pulse
0.01 0
1 10 100 1000 25 50 75 100 125 150
VDS , Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C)

Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy
Vs. Drain Current

10
Thermal Response ( Z thJC )

D = 0.50

P DM
0.20
1 t1
0.10
t2

0.05
0.02
SINGLE PULSE Notes:
0.01 ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005 0.0001 0.001 0.01 0.1 1 10

t1 , Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRHLF77214, 2N7610T2 Pre-Irradiation

V(BR)DSS
tp
15V

L DRIVER
VDS

RG D.U.T. +
V
- DD
IAS A
VGS
20V I AS
tp 0.01Ω

Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG 50KΩ
4.5V 12V .2µF
.3µF

QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

IG ID
Charge
Current Sampling Resistors

Fig 17a. Basic Gate Charge Waveform Fig 17b. Gate Charge Test Circuit

VDS RD VDS
90%
V GS

RG D.U.T. VDD
+
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 % td(on) tr t d(off) tf

Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms
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Pre-Irradiation IRHLF77214, 2N7610T2

Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L = 5.4mH
Peak IL = 3.3A, VGS = 10V
 ISD ≤ 3.3A, di/dt ≤ 372A/µs,
VDD ≤ 250V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — TO-205AF (Modified TO-39)

LEGEND
1- SOURCE
2- GATE
3- DRAIN

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2010
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