National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

CIRCUIT DIAGRAM :
(0 – mA) MC RC =
- +
A
BC547
RE = 1k (0 – mA) MC E C
- +
A
+ (0 – 30V)
-
B (0 – V) V
(0 – 30V) V (0 – V) MC MC

+ -

TABULATION:
Input Characteristics

VCB = 0V VCB = 25V

Sl.No VBE (V) IE (mA) VBE (V) IE (mA)

1.
2.
3.
4.
5.
6.
7.
8.

Output Characteristics

Sl.No IE = 5mA IE = 10 IE = 15

VCB (V) IC (mA) VCB (V) IC (mA) VCB (V) IC (mA)

1.
2.
3.
4.
5.
6.
7.
8.

Page 1 of 8
National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

2.1. ANALYSIS OF TRANSISTOR PARAMETERS UNDER COMMON BASE

CONFIGURATION

AIM:

To obtain the input and output (V-I) characteristics of a BJT in Common Base Configuration

and to plot the characteristics.

APPARATUS REQUIRED:

QUANTITY
S.NO. NAME OF THE EQUIPMENT TYPE RANGE
(NO.S)
1 Bipolar Junction Transistor BC547 1
2 Resistor 2
3 Voltmeter MC 1
MC 1
4 Ammeter MC 2

5 Regulated Power Supply (0 – 30V) 2

6 Bread Board 1
7 Connecting wires Required

THEORY:

Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device capable of

amplifying an ac signal. The three terminals are called the emitter, the base, and the collector. The
device is made up three “layers” of p-type and n-type semiconductor material. BJTs consist of a thin
base layer (either P- or N-type) sandwiched between two layers of the opposite type material. Thus,
BJTs are either NPN or PNP. They are somewhat like two interconnected, back to- back diodes, with
two diode junctions.
In CB configuration, the base is common to both input (emitter) and output (collector). For
normal operation, the E-B junction is forward biased and C-B junction is reverse biased. The input
characteristics are plots of IE versus VBE at constant values of VCB. These characteristics will look like
diode characteristics, particularly if the collector is shorted to the emitter and the emitter-base junction
is forward biased. The output characteristics, often called the collector characteristics, are plots of I C
versus VCB at constant values of IE.

FORMULA USED:

 Input Impedance = ΔVEB / Δ IE Ω

 Output Admittance = Δ IC / ΔVCB mho

 Current Gain = Δ IC / Δ IE

 Voltage Gain = ΔVCB / ΔVEB

Page 2 of 8
National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

MODEL GRAPH: [Attach 2 Graph]

Input characteristics: output characteristics:

IE (mA) IC(mA)

VCB1 VCB2 VCB3

IE3

IE2

I E1

0 VEB(V) 0 VCB (V)

Design:

Find the Maximum Collector Current of BC547 IC (max) = _________ mA from transistor specification

Choose the Collector Current IC = __________ mA [10 – 50 % of IC (max)]

RC = Maximum RPS voltage/ Collector Current IC

RC = __________ Ω

Find / Assume Emitter Current using Transistor Equation IE = IC + IB

IE = __________ mA

RE = Maximum RPS voltage/ Collector Current IE

RE= __________ Ω

Calculations:

Page 3 of 8
National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

PROCEDURE:

1. Identify the Emitter, Base and Collector terminals of the transistor given and set up the circuit
on breadboard as shown in figure.
2. Wire the circuit as shown in figure. By keeping the output voltage (Collector Voltage) constant
and varying the input voltage (Emitter Voltage) ammeter and voltmeter readings are noted
down.
3. Wire the circuit as shown in figure. By keeping the input current (Emitter Current) constant
and varying the output voltage (Collector Voltage) ammeter and voltmeter readings are noted
down.
4. The above procedure shall be repeated for different output voltage and readings can be taken.
5. VI characteristics curves were drawn.

INFERENCE: [Minimum 8 points about the experiment conducted]

1.

2.

3.

4.

5.

6.

7.

8.

RESULT:

Page 4 of 8
 National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

CIRCUIT DIAGRAM :
(0 – mA) MC
- + RC =
A

RB = (0 – μA) MC C
+ - B
A BC547
+ (0 – 30V)
+ E
V (0 – V)
(0 – 30V) V (0 – V)MC MC
-
-

TABULATION:

Input Characteristics

VCE = VCE =

Sl.No VBE (V) IB (μA) VBE (V) IB (μA)

1.
2.
3.
4.
5.
6.
7.

Output Characteristics

Sl.No IB = IB = IB =

VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)

1.
2.
3.
4.
5.
6.
7.

Page 5 of 8
National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

2.2. ANALYSIS OF TRANSISTOR PARAMETERS UNDER COMMON EMITTER

CONFIGURATION

AIM:

To obtain the input and output (V – I) characteristics of a BJT in Common Emitter

Configuration and to plot the characteristics

APPARATUS REQUIRED:

QUANTITY
S.NO. NAME OF THE EQUIPMENT TYPE RANGE
(NO.S)
1 Bipolar Junction Transistor BC547 1
2 Resistor 1
1
3 Voltmeter MC 1
1
4 Ammeter MC 1
MC 1
5 Regulated Power Supply (0 – 30V) 2
6 Bread Board 1
7 Connecting wires Required

THEORY:
A transistor is a three terminal device. The terminals are emitter, base, collector. In common
emitter configuration, input voltage is applied between base and emitter terminals and output is taken
across the collector and emitter terminals. Therefore, the emitter terminal is common to both input and
output. The input characteristics resemble that of a forward biased diode curve. This is expected since
the Base-Emitter junction of the transistor is forward biased.
As compared to CB arrangement IB increases less rapidly with VBE. Therefore, input resistance
of CE circuit is higher than that of CB circuit. The output characteristics are drawn between Ic and VCE
at constant IB. the collector current varies with VCE unto few volts only. After this the collector current
becomes almost constant, and independent of VCE. The value of VCE up to which the collector current
changes with VCE is known as Knee voltage. The transistor always operated in the region above Knee
voltage, IC is always constant and is approximately equal to IB.

FORMULA USED:

 Input Impedance = ΔVEB / Δ IB Ω

 Output Admittance = Δ IC / ΔVCE mho

 Current Gain = Δ IC / Δ IB

 Voltage Gain = ΔVCE / ΔVEB

Page 6 of 8
National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

MODELGRAPH : [Attach 2 Graph]

Input Characteristics: Output Characteristics:

IB(μA) IC (mA)
IB3

IB2
VCE1 VCE2 VCE3

IB1

0 VEB (V) 0 VCE(V)

*** Note – VCE1 < VCE2 < VCE3 Similarly IB1 < IB2 < IB3

Design:

Find the Maximum Collector Current of BC547 IC (max) = _________ mA from transistor specification

Choose the Collector Current IC = _________ mA [10 – 50 % of IC (max)]

RC = Maximum RPS voltage/ Collector Current IC

RC = _________ Ω

Find / Assume Base Current using Transistor Equation & β or hfe value from transistor specification

IE = IC + IB

IB = __________ μA

RB = Maximum RPS voltage/ Collector Current IE

RB= _________ Ω [Note: RB Value may have large variations since large variations in transistor gain β]

Calculations:

Page 7 of 8
National Engineering College, Kovilpatti (19EE37C-Analog Electronics Laboratory)

PROCEDURE:

1. Identify the Emitter, Base and Collector terminals of the transistor given and set up the circuit on
breadboard as shown in figure.
2. Wire the circuit as shown in figure. By keeping the output voltage (Collector Voltage) constant
and varying the input voltage (Base Voltage) ammeter and voltmeter readings are noted down.
3. Wire the circuit as shown in figure. By keeping the input current (Base Current) constant and
varying the output voltage (Collector Voltage) ammeter and voltmeter readings are noted down.
4. The above procedure shall be repeated for different output voltage and input current and
readings can be taken.
5. VI characteristics curves were drawn.

INFERENCE: [Minimum 8 points about the experiment conducted]

1.

2.

3.

4.

5.

6.

7.

8.

RESULT:

Page 8 of 8