1981 RCA Power Devices

nOli Solid
State
RCA
Power Devices
This DAT ABOOK contains complete Table of Contents
technical information on the full line of Page
RCA solid-state power devices: power
transistors, power hybrid circuits, triacs, Index to Devices ............................................. . 3
and SCR's. A complete index of these Power-Transistor Product Classification Chart ................... . 7
types is included on the following pages. Triac Product Classification Chart ............................. . 13
The index to devices is followed by a SCR Product Classification Chart .............................. . 16
series of product matrix charts that Guide to Product Selection:
provide a quick reference to key Power-Transistor Product Matrix ............................ . 20
parameters and device packages to Audio Transistors .......................................... . 25
facilitate type selection. A cross-reference Power Hybrid Comparison Chart ............................ . 26
guide then indicates recommended RCA Triac Product Matrix ...................................... . 27
replacements for more than 2000 popular SCR Product Matrix ....................................... . 30
industry types. Next general operating Packages ............................... , ................. . 32
considerations for solid-state power Power-Devices Cross-Reference Guide ........................ . 34
devices are discussed, and symbols and Operating Considerations ................................... . 49
special terms used to characterize these Terms and Symbols ........... '............................. . 53
devices are listed. Power Transistors - Technical Data:
The DAT ABOOK also contains four JEDEC Types ............................................. . 57
major data sections that provide detailed Pro Electron Types ........................................ . 305
ratings and characteristics for each of Industry Types ............................................ . 457
the various types of devices. For the Power Hybrid Circuits - Technical Data ......................... . 535
convenience of the reader, the Power Triacs - Technical Data ....................................... . 541
Transistor Technical Data are further Silicon Controlled Rectifiers - Technical Data .................... . 609
subdivided according to JEDEC Types, RCA High-Reliability Solid-State Power Devices .............. , .. . 665
Pro Election Types and General Industry Appendix:
Types. Data pages for individual devices General Characteristics, Test Circuits, and Waveforms .......... . 670
are given as nearly as possible in alpha- Dimensional Outlines ...................................... . 677
numerical sequence of the basic family Suggested Hardware and Mounting Arrangements .............. . 683
type numbers. Because many devices Lead Forms for RCA Plastic Power Packages ................. . 685
may be included in the same basic Handling and Mounting of RCA Molded-Plastic Transistors and
family, individual type numbers are not Thyristors ............................................... . 688
necessarily in sequence. Application-Note Abstracts .............................. , .. . 692
If you don't find a type number RCA Sales Offices, Authorized Distributors
where you expect it to be, check the and Manufacturers' Representatives ........................... . 697
Index to Devices.
General information such as test
circuits and waveforms, dimensional
outlines, suggested mounting arrange-
ments, and lead forms for plastic
packages are included in an Appendix at
the back of the book. The Appendix
also includes abstracts of relevant RCA
application notes. The final pages contain
listings of RCA sales offices, manu-
facturers' representatives, and authorized
distributors.
nOli SOlidi
State
Brussels. Buenos Aires. Hamburg. Madrid. Mexico City
Milan _ Montreal _ Paris _ Sao Paulo _ Somerville NJ
Stockholm _ Sunbury-on·Thames _ Taipei _ Tokyo
Notices
Information furnished by RCA is believed to be accurate and reliable.

However, no responsibility is assumed by RCA for its use; nor for any
infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any
patent or patent rights of RCA.
Copyright 1981 by RCA Corporation

(All rights reserved under Pan-American
Copyright Convention)
Trademark(s) ® Registered
Marca(s) Registrada(s)
Printed in USAj7-81
2-------------------------------------------------------------------------
Index to Devices
Type Page Type Page Type Page Type Page
No. No. No. No. No. No. No. No.
2N681 656 2N3873 653 2N5497 151 2N6078 190
2N682 656 2N3878 112 2N5567 580 2N6079 190
2N683 656 2N3879 112 2N5568 580 2N6098 194
2N684 656 2N3896 653 2N5569 580 2N6099 194
2N685 656 2N3897 653 2N5570 580 2N6100 194
2N686 656 2N3898 653 2N5571 580 2N6101 194
2N687 656 2N3899 653 2N5572 580 2N6102 194
2N688 656 2N4036 116 2N5573 580 2N6103 194
2N689 656 2N4037 116 2N5574 580 2N6106 197
2N690 656 2N4063 85 2N5629 154 2N61 07 197
2N697 58 2N4064 85 2N5630 154 2N6108 197
2N699 58 2N4101 619 2N5631 154 2N6109 197
2N1479 64 2N4103 639 2N5632 156 2N6110 197
2N1480 64 2N4231A 119 2N5633 156 2N6111 197
2N1481 64 2N4232A 119 2N5634 156 2N6121 205
2N1482 64 2N4233A 119 2N5671 158 2N6122 205
2N1487 69 2N4240 97 2N5672 158 2N6123 205
2N1488 69 2N4314 116 2N5754 545 2N6124 205
2N1489 69 2N4347 92 2N5755 545 2N6125 205
2N1490 69 2N4348 106 2N5756 545 2N6126 205
2N1613 58 2N4898 122 2N5757 545 2N6129 207
2N1700 64 2N4899 122 2N5781 160 2N6130 207
2N1702 69 2N4900 122 2N5782 160 2N6131 207
2N1711 58 2N4904 124 2N5783 160 2N6132 207
2N1893 58 2N4905 124 2N5784 160 2N6133 207
2N2102 58 2N4906 124 2N5785 160 2N6134 207
2N2270 58 2N4913 126 2N5786 160 2N6211 209
2N2405 58 2N4914 126 2N5806 601 2N6212 209
2N3053 58 2N4915 126 2N5807 601 2N6213 209
2N3053A 58 2N5038 128 2N5808 601 2N6214 209
2N3054 71 2N5039 128 2N5809 601 2N6246 212
2N3055 76 2N5050 133 2N5838 165 2N6247 212
2N3055 80 2N5051 133 2N5839 165 2N6248 212
(Hometaxial) 2N5052 133 2N5840 165 2N6249 216
2N3228 619 2N5202 11 '- 2N5871 169 2N6250 216
2N3439 85 2N5239 135 2N5872 169 2N6251 216
2N3440 85 2N5240 135 2N5873 169 2N6253 80
2N3441 88 2N5293 138 2N5874 169 2N6254 80
2N3442 92 2N5294 138 2N5875 171 2N6259 106
2N3525 619 2N5295 138 2N5876 171 2N6260 71
2N3583 97 2N5296 138 2N5877 171 2N6261 71
2N3584 97 2N5297 138 2N5878 171 2N6262 92
2N3585 97 2N5298 138 2N5879 173 2N6263 88
2N3650 663 2N5301 142 2N5880 173 2N6264 88
2N3651 663 2N5302 142 2N5881 173 2N6282 219
2N3652 663 2N5303 142 2N5882 173 2N6283 219
2N3653 663 2N5320 145 2N5885 175 2N6284 219
2N3654 663 2N5321 145 2N5886 175 2N6285 219
2N3655 663 2N5322 145 2N5954 177 2N6286 219
2N3656 663 2N5323 145 2N5955 177 2N6287 219
2N3657 663 2N5415 148 2N5956 177 2N6288 197
2N3658 663 2N5416 148 2N6032 182 2N6289 197
2N3668 639 2N5441 601 2N6033 182 2N6290 197
2N3669 639 2N5442 601 2N6043 185 2N6291 197
2N3670 639 2N5443 601 2N6044 185 2N6292 197
2N3715 100 2N5444 601 2N6045 185 2N6293 197
2N3716 100 2N5445 601 2N6050 187 2N6306 222
2N3771 102 . 2N5446 601 2N6051 187 2N6307 222
2N3772 102 2N5490 151 2N6052 187 2N6308 222
2N3773 106 2N5491 151 2N6055 227 2N6312 119
2N3791 110 2N5492 151 2N6056 227 2N6313 119
2N3792 110 2N5493 151 2N6057 187 2N6314 119
2N3870 653 2N5494 151 2N6058 187 2N6326 225
2N3871 653 2N5495 151 2N6059 187 2N6327 225
2N3872 653 2N5496 151 2N6077 190 2N6342A 593
3
I ndex to Devices
2N6343A 593 2N6546 253 40348,V1 64 B0501,B 324
2N6344A 593 2N6569 76 40360 See RCA1A01 B0533 326
2N6346A 593 2N6576 257 40362 458 B0534 326
2N6347A 593 2N6577 257 40363 458 B0535 326
2N6348A 593 2N6578 257 40366 58 B0536 326
2N6354 128 2N6594 76 40367 64 B0537 326
2N6371 80 2N6609 260 40372 71 B0538 326
2N6372 177 2N6648 264 40373 88 B0550.B 329
2N6373 177 2N6649 264 40374 97 BD643 335
2N6374 177 2N6650 264 40375 112 B0645 335
2N6383 227 2N6666 266 40385 85 B0647 335
2N6384 227 2N6667 266 40389 58 BD649 335
2N6385 227 2N6668 266 40390 85 B0750,A,B,C 337
2N6386 231 2N6669 269 40391 116 B0751,A,B,C 337
2N6387 231 2N6671 271 40392 58 B0795 340
2N6388 231 2N6672 271 40394 116 B0796 340
2N6394 646 2N6673 271 40406 462 B0797 340
2N6395 646 2N6674 275 40407 462 B0798 340
2N6396 646 2N6675 275 40408 462 B0799 340
2N6397 646 2N6676 278 40409 462 B0800 340
2N6398 646 2N6677 278 40410 462 B0801 340
2N6400 646 2N6678 278 40411 462 B0802 ,340
2N6401 646 2N6686 281 40412,V1 85 B0895,A 342
2N6402 646 2N6687 281 40537 458 B0897,A 342
2N6403 646 2N6688 281 40538 458 B0899,A 342
2N6404 646 2N6689 275 40631 464 B0901 342
2N6420 234 2N6690 275 40634 See RCA1A05 BOX18 76
2N6421 234 2N6691 278 40635 See RCA1A06 BOX23 344
2N6422 234 2N6692 278 40636 See RCA1B01 BOX24 346
2N6423 234 2N6693 278 40814 See RCA1A07 BOX33,A,
2N6465 177 2N6702 285 40815 See RCA1A08 B,C,O 348
2N6466 177 2N6703 285 40829 171 BOX34,A,
2N6467 177 2N6704 285 40831 177 B,C 346
2N6468 177 2N6738 288 40850 466 BOX53,A,
2N6469 212 2N6739 288 40851 466 B,C 352
2N6470 212 2N6740 288 40852 466 BOX83,A,
2N6471 212 2N6751 292 40854 466 B,C 354
2N6472 212 2N6752 2~2 40871 See RCA1C03 BOY29 357
2N6473 197 2N6753 292 40872 See RCA1C04 BOY37 359
2N6474 197 2N6754 292 40913 88 BOY37A 361
2N6475 197 2N6771 296 40979 See RCA1C10 BOY55 363
2N6476 197 2N6772 296 40980 See RCA1C11 BOY56 363
2N6477 237 2N6773 296 41500 197 BOY57A 365
2N6478 237 2N6774 300 41501 197 BOY58R 367
2N6479 240 2N6775 300 B0142 306 BOY71 370
2N6480 240 2N6776 300 B0181 308 BOY90 372
2N6486 243 40250,V1 71 B0182 308 BOY91 372
2N6487 243 40251 80 B0183 308 BOY92 372
2N6468 243 40310 458 B0201 311 BFT19,A,B 374
2N6489 243 40311 458 B0202 311 BFT28,A,B,C 376
2N6490 243 40312 458 B0203 311 BTA2OC,0,E 562
2N6491 243 40313 458 B0204 311 BTA21C,0,E 565
2N6496 128 40314 458 B0239,A,B,C 313 BTA22B,C,
2N6500 112 40316 458 BD240,A,B,C 313 O,E,M 568
2N6510 246 40317 458 B0241,A,B,C 315 BTA23B,C
2N6511 246 40318 458 B0242;A,B,C 315 D,E,M 571
2N6512 246 40319 458 B0243,A,B,C 317 BU126 379
2N6513 246 40321 458 B0244,A,B,C 317 BU323,A 380
2N6514 246 40322 458 B0277 319 BUW40,A,B 383
2N6530 249 40323 458 B0278,A 320 BUW41,A,B 387
2N6531 249 40324 458 B0311 322 BUW64A,B,C 391
2N6532 249 40325 458 B0312 322 BUX10A 394
2N6533 249 40327 458 B0313 322 BUX11,N 396
2N6542 253 40346,V1,V2 85 B0314 322 BUX12 399
2N6544 253 40347,V1 64 B05oo,B 324 BUX13 401
4
Index to Devices
Type Page TylX' Page Type Page Type Page
BUX14 403 RCA1C06 487 S6200A,B, T4106B,
BUX15 405 RCA1C07 489 D,M 650 D,M 607
BUX16,A,B,C 407 RCA1C08 489 S6210A,B, T4110E,
BUX17,A,B,C 410 RCA1C09 491 D,M 650 F,M 580
BUX18,A, RCA1Cl0 492 S6220A,B, T4111E,
B,C 413 RCA1Cll 492 D,M 650 F,M 580
BUX20A 415 RCA1C12 486 S6420A,B T4113B,
BUX21 417 RCA1C13 486 D,M 653 D,E,M 585
BUX31,A,B 420 RCA1E02 494 S6493M 658 T4114B,
BUX32,A,B 424 . RCA1E03 494 S7310B,C, D,E,M 585
BUX37 428 RCA410 495 D,E,M.N 660 T4115B,
BUX39 430 RCA411 497 S741 OM 663 D,E,M 585
BUX40A 432 RCA413 499 S7412M 663 T4116B,
BUX41,N 434 RCA423 499 SC141B,D, D,M 607
BUX42 437 RCA431 499 E,M 574 T4117B,
.BUX43 439 RCA1000 227 SC146B,D, D,M 607
BUX44 442 RCA100l 227 E,M 574 T4120B,
BUX45 445 RCA3054 138 T23OOA,B, D,E,F,M 580
BUX47 447 RCA3055 194 D,F 542 T4121B,
BUX66,A, RCA3441 237 T2301A,B, D,E,F,M 580
B,C 449 RCA3773 472 D,F 542 T4126B,D,M 607
BUX67,A, RCA6340 502 T2302A,B, T47ooB,
B,C 449 RCA6341 502 D,F 542 D,E,F 588
BUX97,A,B 453 RCA8638C, T2303F 545 T6000B,
BUY69A,B,C 455 D,E 472 T2304,B,D 548 C,D,E,
Cl06A,B,C, RCA8786,A, T2305B,D 548 F,M 590
D,E,F,M 610 B,C,D,E 505 T2306A,B,D 607 T6001B,C,
C122A,B,C, RCA9116C, T2310A,B, D,E,F,M 590
D,E,F,M 622 D,E 260 D,F 542 T6006B,C,
HC2000H 536 RCA9166A,B 508 T2311A,B, D,E,M 590
HC2500 536 RCS258 102 D,F 542 T6260B,C,
MACl5-4 596 RCS579 222 T2312A,B, D,E,M 598
MAC15-6 596 S2000A,B,C, D,F 542 T6261B,C,
MACl5-8 596 D,E,F, T2313A,B,D, D,E,M 598
MAC15A-4 596 M,Q,Y 613 F,M 545 T6401B,D,
MAC15A-6 596 S2061A,B,C, T2316A,B,D 607 E,F,M 601
MAC15A-8 596 D,E,F, T2320A,B,C, T6404B,D,E 605
MJ2955 76 M,Q,Y 613 D,E,F 550 T6405B,D,E 605
MJ15OO1 469 S2062A,B,C, T2322A,B, T6406B,D,
MJ15OO2 469 D,E,F, C,D,E 550 E,M 607
MJl5003 472 M,Q,Y 613 T2323A,B,C, T6407B,D,
MJ15004 260 S2600B,D,M 616 D,E,F 550 E,M 607
MJ15022 508 S2610B,D,M 616 T2327A,B,C, T6411B,D,
MJ15024 SOB S2620B,D,M 616 D,E,F 550 E,F,M 601
RCA1A01 475 S2710B,D,M 619 T25OOB,D 553 T6414B,D 605
RCA1A02 475 S2800A,B,C, T2506B,D 607 T6415B,D 605
RCA1A03 475 D,E,F,M,S 625 T27ooB,D 555 T6416B,D,M 607
RCA1A04 475 S3060A,B, T2706B,D 607 T6417B,D,M 607
RCA1A05 475 D,F,M 627 T2710B,D 555 T6420B,D,
RCA1A06 475 S3700B,D,M 630 T2716B,D 607 E,F,M 601
RCA1A09 475 S3701M 632 T2800A,B,C T6421B,D,
RCA1Al0 475 S3702S 633 D,E,F,M 558 E,F,M 601
RCA1Al1 475 S3703SF 633 T2801A,B,C T6426B,D,M 607
RCA1A15 475 S3705M 633 D,E,F,M 558 T6427B,D,M 607
RCA1A16 475 S3706E 633 T2802A,B,C TIP29,A,B,C, 511
RCA1A18 475 S3900E,MF, D,E,F,M 558 TlP30,A,B,C, 513
RCA1A19 475 S,SF 636 T2806B,C TIP31.A,B,C, 515
RCA1BOl 478 S3901M, D,M 607 TIP32.A,B,C, 517
RCA1B04 479 MF,S 636 T2850A,B, TIP41,A,B,C, 519
RCA1B05 479 D,E,M 577 TIP42,A,B,C, 521
S4060A,B,
RCA1B08 485 T2856B,C,D 607 TlP47 523
RCA1B09 C,D,E,F,M, T41OOE,
479 TIP48 523
RCA1C03 486 .N,S,U 642 F,M 580 TIP49 523
RCA1C04 486 S5800B,C, T4101 E, TIP50 523
RCA1C05 487 D,E,M 644 F,M 580 TIP100 526
5
Index to Devices
TIP101 526 TIP121 528 TIP126 531 TIP562 533
TIP102 526 TlP122 528 TIP127 531 TIP563 533
TIP120 528 TIP125 531
6 ____________________________________________________________________
Power Transistor Product Classification Chart.
VCEO PT VCEO PT
Type Page [Max.] [Max.] File Type Page [Max.] [Max.] File
No. No. V w hFE/IC[A] No. No. No. V w hFE/IC[A] No.
2N697 56 40~ 2 40-12010.15 16 2N5039' 126 75 140 30-25012 696
2N699 56 60~ 2 35-10010.001 22 2N5050 133 125 40 25-1 00/0.75 1096
2N1479' 64 40 5 20-6010.2 135 2N5051 133 150 40 25-100/0.75 1096
2N1460' 64 55 5 20-6010.2 135 2N5052 133 200 40 25-100/0.75 1096
2N1461' 64 40 5 35-10010.2 135 2N5202 112 50 35 10-100/4 766
2N1462' 64 55 5 35-10010.2 135 2N5239 135 225 100 20-6010.4 321
2N146l' 69 40 75 15-45/1.5 139 2N5240 135 300 100 20-6010.4 321
2N1466' 69 55 75 15-45/1.5 139 2N5293 136 70 36 30-120/0.5 322
2N1469' 69 40 75 25-75/1.5 139 2N5294 136 70 36 30-120/0.5 322
2N1490' 69 55 75 25-75/1.5 139 2N5295 136 40 36 30-12011 322
2N1613 56 75 3 30-100/0.001 106 2N5296 136 40 36 30-12011 322
2N1700 64 40 5 20-60/0.1 141 2N5297 136 60 36 20-60/1.5 322
2N1702 69 40 75 15-60/0.6 141 2N5296 136 60 36 20-60/1.5 322
2N1711 56 50~ 3 100-300/0.15 26 2N5301 142 40 200 15-60/15 1029
2N1693 56 60 3 40-120/0.150 34 2N5302' 142 60 200 15-60/15 1029
2N2102 56 65 5 40-120/0.150 106 2N5303' 142 60 200 15-60/10 1029
2N2270 56 45 5 50-200/0.150 24 2N5320 145 75 10 30-13010.5 325
2N2405 56 90 5 60-200/0.150 34 2N5321 145 50 10 40-250/0.5 325
2N30!j3 56 40 5 50-250/0.150 960 2N5322 145 -75 10 30-1301-0.5 325
2N3053A 56 60 5 50-250/0.150 960 2N5323 145 -50 10 40-2501-0.5 325
2N3054 71 55 25 25-150/0.5 527 2N5415 146 -200 10 30-1501-0.05 336
2N3055 76 60 115 20-7014 994 2N5416 146 -300 10 30-1201-0.05 336
2N3055' 80 60 115 20-7014 1077 2N5490 151 40 50 20-100/2 353
(Hometaxial) 2N5491 151 40 50 20-100/2 353
2N3439' 65 350 10 40-160/0.02 64 2N5492 151 55 50 20-100/2.5 353
2N3440' 85 250 10 40-160/0.02 64 2N5493 151 55 50 20-100/2.5 353
2N3441' 68 140 25 25-100/0.5 529 2N5494 151 40 50 20-10013 353
2N3442' 92 140 117 20-70/3 528 2N5495 151 40 50 20-100/3 353
2N3583 97 175 35 40-200/0.750 138 2N5496 151 70 50 20-100/3.5 353
2N3584' 97 250 35 25-100/1 136 2N5497 151 70 50 20-100/3.5 353
2N3585' 97 300 35 25-100/1 136 2N5629 154 100 200 25-100/6 1141
2N3715 100 60 150 50-150/1 1056 2N5630 154 120 200 20-80/8 1141
2N3716 100 80 150 50-150/1 1058, 2N5631 154 140 200 15-6018 1141
2N3771' 102 40 150 15-60/15 974 2N5632 156 100 150 25-100/5 1094
2N3772' 102 60 150 15-60110 974 2N5633 156 120 150 20-80/5 1094
2N3773 106 140 150 15-60/8 526 2N5634 156 140 150 15-60/5 1094
2N3791 110 -60 150 50-1501-1 1059 2N5671' 158 90 140 20-100/15 383
2N3792 110 -60 150 50-1501-1 1059 2N5672' 158 120 140 20-100/15 383
2N3878 112 50 35 40-200/0.5 766 2N5781 160 -65 10 20-100/-1 413
2N3679' 112 75 35 12-100/4 766 2N5782 160 -50 10 20-100/-1.2 413
2N4036 116 -65 7 40-140/-0.15 216 2N5763 160 -40 10 20-100/-1.6 413
2N4037 116 -40 7 50-2501-0.15 216 2N5784 160 65 10 20-100/1 413
2N4063 65 350 10 40-160/0.020 64 2N5765 160 50 10 20-100/1.2 413
2N4064 85 250 10 40-160/0.020 64 2N5766 160 40 10 20-100/1.6 413
2N4231A 119 40 75 25-100/1.5 1102 2N5638 165 250 100 8-40/3 410
2N4232A 119 60 75 25-100/1.5 1102 2N5839 165 275 100 10-50/2 410
2N4233A 119 80 75 25-100/1.5 1102 2N5840 165 350 100 10-50/2 410
2N4240 97 300 35 30-150/0.750 136 2N5871 169 -60 115 20-100/-2.5 1066
2N4314 116 -65 7 50-250/-0.150 216 2N5872 169 -80 115 20-100/-2.5 1066
2N4347 96 120 100 15-6012 526 2N5873 169 60 115 20-100/2.5 1066
2N4348 106 120 120 15-60/5 526 2N5674 169 80 115 20-100/2.5 1066
2N4696 122 40 25 20-100/0.5 1150 2N5875 171 -60 150 20-100/-4 1065
2N4899 122 60 25 20-100/0.5 1150 2N5876 171 -80 150 20-100/-4 1065
2N4900 122 80 25 20-100/0.5 1150 2N5877 171 60 150 20-100/4 1065
2N4904 124 -40 87.5 25-1001-2.5 1068 2N5878 171 80 150 20-100/4 1065
2N4905 124 -60 87.5 25-1001-2.5 1068 2N5879 173 -60 160 20-100/-6 1064
2N4906 124 -60 87.5 25-100/-2.5 1068 2N5880 173 -80 160 20-100/-6 1065
2N4913 126 40 87.5 25-100/2.5 1067 2N5881 173 60 160 20-100/6 1065
2N4914 126 60 87.5 25-10012.5 1067 2N5882 173 80 160 20-100/6 1065
2N4915 126 80 87.5 25-100/2.5 1067 2N5885 175 60 200 20-100/10 1041
2N5038' 128 90 140 50-250/2 698 2N5886 175 80 200 20-100/10 1041
•JAN-type versions also available ~ vCER
7
Power Transistor Product Classification Chart
VCEO PT VCEO PT
No. No. V W hFE/IC[A] No. No. No. V w hFE/IC[A] No.
2N5954 177 -80 40 20-100/-2 675 2N6282 219 60 160 750-18000/10 1001
2N5955 177 -60 40 20-100/-2.5 675 2N6283' 219 80 160 750-18000/10 1001
2N5956 177 -40 40 20-100/-3 675 2N6284' 219 100 160 750-18000/10 1001
2N6032' 182 90 140 10-50/50 462 2N6285 219 -60 160 750-18000/-10 1001
2N6033' 182 120 140 10-50/50 462 2N6286 219 -80 160 750-18000/-10 1001
2N6043 185 60 75 1000-20000/4 1151 2N6287 219 -100 160 750-18000/-10 1001
2N6044 185 80 75 1000-20000/4 1151 2N6288 197 30 40 30-150/3 676
2N6045 185 100 75 1000-20000/3 1151 2N6289 197 30 40 30-150/3 676
2N6050 187 60 150 750-18000/6 1185 2N6290 197 50 40 30-150/2.5 676
2N6051 187 80 150 750-18000/6 1185 2N6291 197 50 40 30-150/2.5 676
2N6052 187 100 150 750-18000/6 1185 2N6292 197 70 40 30-150/2 676
2N6055 227 60 100 750-18000/4 563 2N6293 197 70 40 30-150/2 676
2N6056 227 80 100 750-18000/4 563 2N6306' 222 250 125 15-75/3 885
2N6057 187 60 150 750-18000/6 1185 2N6307 222 300 125 15-75/3 885
2N6058 187 80 150 750-18000/6 1185 2N6308' 222 350 125 12-60/3 885
2N6059 187 100 150 750-18000/6 1185 2N6312 119 -40 75 25-100/-1.5 1102
2N6077 190 275 45 12-70/1.2 492 2N6313 119 -60 75 25-100/-1.5 1102
2N6078 190 250 45 12-7011.2 492 2N6314 119 -80 75 25-100/-1.5 1102
2N6079 190 350 45 12-50/1.2 492 2N6326 225 60 200 6-30/30 1040
2N6098 194 60 75 20-80/4 485 2N6327 225 80 200 6-30/30 1040
2N6099 194 60 75 20-80/4 485 2N6354 128 120 140 20-150/5 582
2N6100 194 70 75 20-80/5 485 2N6371 80 40 117 15-60/8 1077
2N6101 194 70 75 20-8015 485 2N6372 177 80 40 20-100/2 675
2N6102 194 40 75 15-60/8 485 2N6373 177 60 40 20-100/2.5 675
2N6103 194 40 75 15-60/8 485 2N6374 177 40 40 20-)00/3 675
2N6106 197 -70 40 30-150/-2 676 2N6383' 227 40 100 1000-20000/5 609
2N6107 197 -70 40 30-150/-2 676 2N6384' 227 60 100 1000-20000/5 609
2N6108 197 -50 40 30-150/-2.5 676 2N6385' 227 80 100 1000-20000/5 609
2N6109 197 -50 40 30-150/-2.5 676 2N6386 231 40 65 1000-20000/3 610
2N6110 197 -30 40 30-150/-3 676 2N6387 231 60 65 1000-20000/5 610
2N6111 197 -30 40 30-150/-3 676 2N6388 231 80 65 1000-20000/5 610
2N6121 205 45 40 25-100/1.5 1149 2N6420 234 -175 35 40-200/-0.5 1100
2N6122 205 60 40 25-100/1.5 1149 2N6421 234 -250 35 25-100/-1 1100
2N6123 205 80 40 20-80/1.5 1149 2N6422 234 -300 35 25-100/-1 1100
2N6124 205 -45 40 25-100/-1.5 1149 2N6423 234 -300 35 30-150/-0.75 1100
2N6125 205 -60 40 25-100/-1.5 1149 2N6465 177 100 40 15-150/1.5 888
2N6126 205 -80 40 20-80/-1.5 1149 2N6466 177 120 40 15-150/1.5 888
2N6129 207 40 50 20-100/2.5 1233 2N6467 177 -100 40 15-150/-1.5 888
2N6130 207 60 50 20-100/2.5 1233 2N6468 177 -120 40 15-150/-1.5 888
2N6131 207 80 50 20-100/2.5 1233 2N6469 212 -40 125 20-150/-5 677
2N6132 207 -40 50 20-100/-2.5 1233 2N6470 212 40 125 20-150/5 677
2N6133 207 -60 50 20-100/-2.5 1233 2N6471 212 60 125 20-150/5 677
2N6134 207 -80 50 20-100/-2.5 1233 2N6472 212 80 125 20-150/5 677
2N6211' 209 -225 35 10-100/-1 507 2N6473 197 100 40 15-150/1.5 676
2N6212' 209 -300 35 10-100/-1 507 2N6474 197 120 40 15-150/1.5 676
2N6213' 209 -350 35 10-100/-1 507 2N6475 197 -100 40 15-150/-1.5 676
2N6214 209 -400 35 10-100/-1 507 2N6476 197 -120 40 15-150/-1.5 676
2N6246 212 -60 125 20-100/-7 677 2N6477 237 130 50 25-150/1 680
2N6247 212 -80 125 20-100/-6 677 2N6478 237 150 50 25-150/1 680
2N6248 212 -100 125 20-100/-5 677 2N6479 240 60 87 20-300/12 702
2N6249 216 200 175 10-50/10 523 2N6480 240 80 87 20-300/12 702
2N6250 216 275 175 8-50/10 523 2N6486 243 40 75 20-150/5 678
2N6251 216 350 175 6-50/10 523 2N6487 243 60 75 20-150/5 678
2N6253 80 45 115 20-70/3 1077 2N6488 243 80 75 20-150/5 678
2N6254 80 60 150' 20-70/5 1077 2N6469 243 -40 75 20-150/-5 678
2N6259 106 150 250 15-60/8 526 2N6490 243 -60 75 20-150/-5 678
2N6260 71 40 29 20-100/1.5 527 2N6491 243 -80 75 20-150/-5 678
2N6261 71 80 50 25-100/1.5 527 2N6496 128 110 140 12-100/8 698
2N6262 92 150 150 20-70/3 528 2N6500 112 90 35 15-60/3 766
2N6263 88 120 20 20-100/0.5 529 2N6510 246 200 120 10-50/3 848
2N6264 88 150 50 20-60/1 529 2N6511 246 250 120 10-50/4 848
i
'JAN-type versIons also available
8
VCEO PT VCEO PT
No. No. V W hFE/IC[A] No. No. No. V W hFE/IC[A] No.
2N6512 246 300 120 10-50/4 848 40314 458 40 5 70-350/0.050 962
2N6513 246 350 120 10-50/4 848 40316 458 40 6 29 20-120/1 962
2N6514 246 300 120 10-50/4 848 40317 458 40 5 40-20010.01 0 962
2N6530 249 80 65 1000-10000/5 873 40318 458 300" 35 50 min.lO.500 962
2N6531' 249 100 65 500-10000/3 873 40319 458 -40 5 35-200/-0.050 962
2N6532 249 100 65 1000-10000/5 873 40321 458 300" 5 25-200/0.020 962
2N6533 249 120 65 1000/10000/3 873 40322 458 300 6 35 75 min.lO.500 962
2N6542 253 300 100 12-60/1.5 1096 40323 458 18 5 70-350/0.050 962
2N6544 253 300 125 12-6012.5 1096 40324 458 35 29 20-120/1 962
2N6546' 253 300 175 12-60/5 1096 40325 458 35 117 12-60/8 962
2N6569 76 40 100 15-200/4 994 40327 458 300" 5 40-250/0.020 962
2N6576 257 60 120 2000-20000/4 1152 40346 85 175" 10 25 min.ll0 211
2N6577 257 90 120 2000-20000/4 1152 40346VI 85 175" 4 25 min.ll0 211
2N6578 257 120 120 2000-20000/4 1152 40346V2 85 175" 10 25 min.ll0 211
2N6594 76 -40 100 15-200/-4 994 40347 64 40 8.75 25-100/0.45 88
2N6609 260 -140 150 15-601-8 1061 40347VI 64 40 4.4 25-100/0.45 88
2N6648' 264 -40 70 1000-20000/-5 1013 40348 64 65 8.75 30-125/0.30 88
2N6649' 264 -60 70 1000-20000/-5 1013 40348VI 64 65 4.4 30-125/0.30 88
2N6650' 264 -80 70 1000-200001-5 1013 40360 Same as RCA1AOl
2N6666 266 -40 65 1000-200001-3 1069 40362 458 70 6 5 35-200/-0.050 962
2N6667 266 -60 65 1000-20000/-5 1069 40363 458 70 6 115 20-70/4 962
2N6668 266 -80 65 1000-20000/-5 1069 40366 58 65 5 40-120/0.150 215
2N6669 269 30 40 20-100/5 1071 40367 64 55 5 35-100/0.200 215
2N6671 271 300 150 10-40/5 1090 40372 71 55 25 25-15010.5 527
2N6672 271 350 150 10-40/5 1090 40373 88 140 25 25-100/0.5 529
2N6673 271 400 150 10-40/5 1090 40374 97 175 5.8 40-200/0.750 138
2N6674 275 300 175 8-20/10 1164 40375 112 50 5.8 40-200/0.5 766
2N6675 275 400 175 11-20/10 1164 40385 85 350 1 40-160/0.020 215
2N6676 278 300 175 8 min.l15 1165 40389 58 40 5 50-250/0.150 960
2N6677 278 350 175 8 min.l15 1165 40390 85 250 3.5 40-16010.020 64
2N6678 278 400 175 8min.l15 1165 40391 116 -40 3.5 50-2501-0.150 216
2N6686 281 160 200 25-100/10 1171 40392 58 40 7 50-250/0.150 960
2N6687 281 180 200 25-100/10 1171 40394 116 -40 7 50-250/-0.150 216
2N6688 281 200 200 20-80110 1171 40406 462 -50 30-20010.0001 219
2N6689 275 300 175 8-20/10 1164 40407 462 50 40-200/0.001 219
2N6690 275 400 175 8-20/10 1164 40408 462 90 1 40-200/0.01 219
2N6691 278 300 175 8min.l15 1165 40409 462 90" 3 50-250/0.15 219
2N6692 278 350 175 8min.l15 1165 40410 462 90" 3 50-250/0.15 219
2N6693 278 400 175 8min.l15 1165 40411 462 250" 150 35-100/4 219
2N6702 285 90 50 30 min.lO.2 1187 40412 85 250" 10 40 min.lO.030 211
2N6703 285 110 50 30 min.lO.2 1187 40412VI 85 250" 4 40 min.lO.030 211
2N6704 285 130 50 30 min.lO.2 1187 40537 458 _55" 5 50-300/-0.050 320
2N6738 288 300 100 10-40/5 1291 40538 458 _55" 5 15-901-0.500 320
2N6739 288 350 100 10-40/5 1291 40631 464 45" 36 20-70/2 965
2N6740 288 400 100 10-40/5 1291 40634 Same as RCA 1A05
2N6751 292 400 150 8-40/5 1244 40635 Same as RCA1A06
2N6752 292 450 150 8-40/5 1244 40636 Same as RCA 1 BOl
2N6753 292 500 150 8-40/5 1244 40814 Same as RCA 1A07
2N6754 292 500 150 8-40/5 1244 40815 Same as RCA 1A08
2N6771 296 300 40 20-100/0.3 1292 40829 177 80 5.8 20-10012 675
2N6772 296 350 40 20-100/0.3 1292 40831 177 40 5.8 20-100/3 675
2N6773 296 400 40 20-100/0.3 1292 40850 466 300 35 25 min.!0.75 964
2N6774 300 300 175 8min.!15 1313 40851 466 350 45 12 min'!1.2 964
2N6775 300 350 175 8min.!15 1313 40852 466 350 100 12 min'!1.2 964
2N6776 300 400 175 8min.l15 1313 40854 466 300 175 8min.ll0 964
40250 71 40 29 25-100/1.5 112 40871 Same as RCA 1 C03
40250VI 71 40 5.8 25-100/1.5 112 40872 Same as RCA 1 C04
40251 80 40 117 15-6018 112 40913 88 150 5.8 20-6011 529
40310 458 35 29 20-120/1 962 40979 Same as RCA1Cl0
40311 458 30 5 70-350/0.050 962 40980 Same as RCA 1 Cl1
40312 458 60" 29 20-120/1 962 41500 197 25 40 25min.ll 772
40313 458 300" 35 40-250/0.100 962 41501 197 -25 40 25 min.l-l 770
•JAN-type versions also available " VCER
9
Power Transistor Product Classification Ch-.rt
VCEO Py VCEO Py
Type Pege [Max.j [Max.] File Type Page [Max.] [Max.] File
No. No. V w hpE/IC[A] No. ·No. No. V w hFE/IC[A] No.
B0142 306 45 117 12.5-160/4 701 B0796 340 -45 65 40 min.l-l 1242
B0181 308 45 117 20-70/3 700 B0797 340 60 65' 40 min.ll 1242
B0182 308 60 117 20-70/4 700 B0798 340 -60 65 40 min.l-l 1242
BOl83 308 80 117 29-70/3 700 B0799 34Q '80 65 30 min.ll 1242
B0201 311 45 60 30 min.ll 1282 B0800 340 -80 65 30 min.l-l 1242
B0202 311 -45 60 30 mln.l-l 1282 B0801 340 100 65 30 min.ll 1242
B0203 311 60 60 30 min'/l 1282 B0802 340 -100 65 30 min.l-l 1242
B0204 311 -60 60 30 min.l-l 1282 B0895 342 45 70 750min./3 1240
B0239 313 45 30 40min.lO.2 669 B0895A 342 45 70 750 min'/4 1240
B0239A 313 60 30 40min.lO.2 669 B0897 342 60 70 75Qmin.l3 1240
B0239B 313 80 30 40 min.lO.2 669 ~0897A 342 60 70 750 min.l4 1240
B0239C 313 100 30 40min.lO.2 669 B0899 342 80 70 750 min./3 1240
B0240 313 -45 30 40 min.l-0.2 670 B0899A 342 80 70 750 min./4 1240
B0240A 313 -60 30 40 min.l-0.2 670 B0901 342 100 70 750min./3 1240
B0240B 313 -80 30 40 min./-0.2 670 BOX18 76 -60 115 20-70/-4 994
B0240C 313 -100 30 40 min.l-0.2 670 BDX23 344 95 117 20-70/4 1287
B0241 315 45 40 25 min.ll 671 BOX24 346 40 29 25-100/1.5 1286
B0241 A 315 60 40 25 min.ll 671 BOX33 348 45 70 750 mln.l4 693
B0241B 315 80 40 25 min.ll 671 BOX33A 348 60 70 750 min.l4 693
/ B0241C
B0242
315
315
100
-45
40
40
25 mln.ll
25 mln.l-l
671
672
BOX33B
Bbx33C
348
348
80
100
70
70
750 min.l3
750 min.l3
693
693
B0242A 315 ~60 40 25 mln.l-l 672 BOX330 348 120 70 750 min.l3 693
B0242B 315 -80 40 25 min.l-l 672 BOX34 348 -45 70 750 min.l-4 694'
B0242C 315 -100 40 25 min.l-l 672 BOX34A 348 -60 70 750 min.l-4 694
B0243 317 45 65 30 min.lO.30 673 BOX34B 348 -80 70 750 min.l-3 1194
B0243A 317 60 65 30 mln.lO.30 673 BOX34C 348 -100 70 750 min.l-3 694
B0243B 317 80 65 30 mln.lO.30 673 BOX53 352 45 60 750 min.l3 1213
B0243C 317 100 65 30 min.lO.30 673 BOX53A 352 60 60 750 min.l3 1213
B0244 317 ~45 65 30 min.l-0.30 674 BOX53B 352 80 60 750 min.l3 1213
B0244A 317 -60 65 30 min.l-0.30 674 BOX53C 352 100 60 750 min.l3 1213
B0244B 317 -60 65 30 min.l-0.30 674 BOX83 354 45 125 750 min'/l 955
B0244C 317 -1Q(} 65 30 min.l-0.30 674 BOX83A 354 60 125 750 min'/l 955
B02n 319 -45 70 30-150/-1.75 667 BOX83B 354 80 125 750min'/1 955
B0278 320 45 75 15-75/4 969. BOX83C 354 100 125 750mln.ll 955
B0278A 320 45 75 15-75/4 969 BOY29 357 75 220 15-60/15 819
B0311 322 60 150 .20 min.l5 1261 BOY37 359 149 150 15-60/8 863
B0312 322 -60' 150 25 min.l-5 1261 BOY37A 361 140 250 15-60/8 1256
B0313 322 80 150 25 min.l4 1261 BOY55 ass 60 117 20-70/4 1215
B0314 322 -60 150 25 min.l-4 1261 BOY56 363 120 117 20-70/4 1215
B0500 324 -50 75 15-90/-5 1108 BOY57A 365 80 175 20-60/10 1209
B0500B 324 -80 75 20-120/-3.5 1108 BOY56R 367 160 175 2O-tiO/10 1206
B0501B 324 80 75 20-120/3.5 1108 BOY71 370 55 29 80-200/0.5 859
B0533 326 45 50 20 min./O.Ol 1236 BOY90 372 100 40 30-12015 1289
B0534 326 -45 50 20 min.l-O.Ol 1236 BOY91 372 80 40 30-12015 1289
B0535 326 60 50 20 min.lO~Ol 1236 BOY92 372 60 40 30-12015 1289
B0536 326 -60 50 20 min.l-O.Ol 1236 BFT19 374 -150 5 20 min.l-l0 683
B0537 326 80 50 15 min.lO.Q1 1236 BFT19A 374 -250 5 20 min./-l0 683
B0538 326 -80 50 15 min.l-O.Ol 1236 BFT19B 374 -350 5 20 min./-l0 683
B0550 329 110 150 15-75/4 1109 BFT28 376 -100 5 20min.l-l0 815
B0550B 329 250 150 10-50/2 1109 BFT28A 376 -150 5 20 min'/-10 815
B0643 335 45 62.5 1500 min.lO.5 1241 BFT28B 376 -200 5 20 min.l-l0 815
B0645 335 60 62.5 1500 min.lO.5 1241 BFT28C 376 -250 5 20 min.l-l0 815
B0647 335 80 .62.5 1500 min.lO.5 1241 BU126 379 ~ 80 15-6011 968
B0649 335 100 62.5 1500 min.lO.5 1241 BU323 380 350 175 150-2000/6 1312
B0750 337 -90 200 15-60/-7.5 1251 BU323A 380 400 175 150-2000/6 1312
B0750A 337 -120 200 25-100/-5 1251 BUW40 383 300 40 20-100/0.3 1308
B0750B 337 -100 250 15-60/-7.5 1251 BUW40A 383 350 40 20-100/0.3 1308
B0750C 337 -130 250 25-100/-5 1251 BUW40B 383 400 40 20-100/0.3 1308
B0751 337 90 200 15-60n.5 1251 BUW41 387 300 100 10-4015 1275
B0751A 337 120 200 25-100/5 1251 BUW41 A 387 350 100 10-4015 1275
B0751B 337 100 250 15-60n.5 1251 BUW41B 387 400 100 10-4015 1275
-S0751C 337 130 250 25-100/5 1251 BUW64A 391 90 50 . 3OminJO.2 1199
B0795 340 45 65 40 min.ll 1242 BUW64B 391 110 50 30min.lO.2 1199
10
VCEO PT VCEO PT
No. No. V W hFE/IC[A] No. No. No. V w hFE/IC[A] No.
BUW64C 391 130 50 30 min.J0.2 1199 RCA1A03 475 95~ 10 70-300/0.300 651
BUX10A 394 125 150 20-70/10 1216 RCA1A04 475 -95~ 10 70-300/-0.300 651
BUXll 396 200 150 2D-60/6 1221 RCA1A05 475 -75~ 5 50-250/-0.150 651
BUXllN 396 160 150 2D-60/8 1221 RCA1A06 475 75~ 5 50-250/0.150 651
BUX12 399 250 150 20-60/5 1229 RCA1A09 475 175 10 20-100/0.010 651
BUX13 401 325 150 15-£014 1230 RCA1Al0 475 -175 10 40-250/-0.010 651
BUX14 403 400 150 15-£0/3 1203 RCA1All 475 175 10 40-250/0.001 651
BUX15 405 500 150 15-£0/2 1227 RCA1A15 475 100 10 20-100/0.010 651
BUX16 407 200 100 15-130/0.4 800 RCA1A16 475 -100 10 40-250/-0.Q1 0 651
BUX16A 407 250 100 15-130/0.4 800 RCA1A18 475 10 7 40-250/0.01 0 651
BUX16B 407 300 100 15-130/0.4 800 RCA1A19 475 -10 7 40-250/-0.01 0 651
BUXl6C 407 350 100 15-130/0.4 800 RCA1BOl 478 95 115 20-70/4 647
BUX17 410 150 150 20min.J4 818 RCA1B04 479 200 150 15-75/2 908
BUX17A 410 250 150 20min.J4 818 RCA1B05 479 250 150 15-75/2 908
BUX17B 410 300 150 15 min.J4 818 RCA1B06 485 100 150 10-50/4 648
BUX17C 410 350 150 15 min.J4 818 RCA1B09 479 250 150 40 min.l2 908
BUX18 413 200 120 15-100/1 862 RCA1C03 486 100 40 50-250/1 652
BUX18A 413 275 120 15-100/1 862 RCA1C04 486 -100 40 50-250/-1 652
BUX18B 413 325 120 15-100/1 862 RCA1C05 487 50 40 20-120/3 644
BUX18C 413 375 120 15-100/1 862 RCA1C06 487 -50 40 20-120/-3 644
BUX20A 415 125 140 20-60/20 1264 RCA1C07 489 65 75 20-120/4 646
BUX21 417 200 250 20-60/12 1172 RCA1C08 489 -65 75 20-120/-4 646
BUX31 420 400 150 8-4014 1283 RCA1C09 491 65 75 20-120/4 645
BUX31A 420 450 150 8-40/4 1283 RCA1Cl0 492 40 40 50-25011.5 642
BUX31B 420 500 150 8-40/4 1283 RCA1Cll 492 -40 40 50-250/-1.5 642
BUX32 424 400 150 8-40/6 1285 RCA1C12 486 120 40 40-250/1 652
BUX32A 424 450 150 8-40/6 1285 RCA1C13 486 -120 40 40-250/-1 652
BUX32B 424 500 150 8-40/6 1285 RCA1E02 494 175 35 30-150/0.3 653
BUX37 428 400 35 20 min.l15 1243 RCA1E03 494 -175 35 30-150/-0.3 653
BUX39 430 90 120 15-45/12 1211 RCA410 495 200 125 30-90/1 509
BUX40A 432 125 120 15-80/10 1217 RCA411 497 300 125 30-90/1 510
BUX41 434 200 120 15-45/5 1222 RCA413 499 325 125 20-80/0.5 1281
BUX41N 434 160 120 15-45/8 1222 RCA423 499 325 125 30-90/1 1281
BUX42 437 250 120 15-45/4 1218 RCA431 499 325 125 15-35/2.5 1281
BUX43 439 325 120 15-60/3 1214 RCA1000 227 60 90 750 min.l4 594
BUX44 442 400 120 15-45/2 1210 RCA1001 227 80 90 750 min.l4 594
BUX45 445 500 120 15-45/1 1231 RCA3054 138 55 36. 25-100/0.5 618
BUX47 447 400 107 5 min.l6 1284 RCA3055 194 60 75 20-70/4 618
BUX66 449 -150 35 10-1501-1 870 RCA3441 237 150 36 20-150/0.5 666
BUX66A 449 -250 35 10-150/-1 870 RCA3773 472 140 150 15-60/8 1060
BUX66B 449 -300 35 10-150/-1 870 RCA6340 502 140 200\ 30-120/10 1205
BUX66C 449 -350 35 10-150/-1 870 RCA6341 502 150 200 30-120/10 1205
BUX67 449 150 35 10-15011 871 RCA8638C 472 140 200 25-150/5 1060
BUX67A 449 250 35 10-100/1 871 RCA8638D 472 120 200 25-150/5 1060
BUX67B 449 300 35 10-150/1 871 RCA8638E 472 100 200 10-1 OOn.5 1060
BUX67C 449 350 35 10-150/1 871 RCA8766 505 350 150 100 min.l6 973
BUX97 453 350 60 10-70/1 1288 RCA8766A 505 350 150 100 min.J4 973
BUX97A 453 400 60 10-70/1 1288 RCA8766B 505 400 150 100 min.J6 973
BUX97B 453 450 60 10-70/1 1288 RCA8766C 505 400 150 100 min.J4 973
BUY69A 455 400 100 15 min.l2.5 1237 RCA87s6D~ 505 450 150 100 min.l6 973
BUY69B 455 325 100 15 min.l2.5 1237 RCA8766E 505 450 150 100 min.J4 973
BUY69C 455 200 100 15 min.l2.5 1237 RCA9116C 260 -140 200 25-150/-5 1061
MJ2955 76 -60 150 20-70/-4 994 RCA9116D 260 -120 200 25-150/-5 1061
MJ15001 469 140 200 25-150/4 1093 RCA9116E 260 -100 200 10-100/-7.5 1061
MJ15002 469 -140 200 25-150/-4 1093 RCA9166A 508 250 250 30 min.l3 1293
MJ15003 472 140 250 25-150/5 1060 RCA9166B 508 200 250 30 min.J3 1293
MJ15004 260 -140 250 25-150/-5 1060 RCS258 102 60 250 15-60110 974
MJ15022 508 200 250 15-60/8 1293 RCS579 222 250 125 12 min.l3 886
MJ15024 508 250 250 15-60/8 1293 TIP29 511 40 30 15-150/1 990
RCA1AOl 475 70 5 40-200/0.010 651 TIP29A 511 60 30 15-150/1 990
RCA1A02 475 -50 7 30-200/-0.0001 651 TIP29B 511 80 30 15-150/1 990
6 VCER
11
VCEO PT VCEO PT
Type Page [Max.) [Max.) File Type Page [Max.) [Max.) File
No. No. V W hFE/IC[A) No. No. No. V W hFE/IC[A) No.
TIP29C 511 100 30 15-150/1 990 TIP42A 521 -60 65 15-150/-3 996
TIP30 513 -40 30 15-150/-1 988 TIP42B 521 -80 65 15-150/-3 996
TIP30A 513 -60 30 15-150/-1 988 TIP42C 521 -100 65 15-1501-3 996
TIP30B 513 -80 30 15-150/-1 988 TIP47 523 250 40 30-15010.3 978
TIP30C 513 -100 30 15-150/-1 988 TIP48 523 300 40 30-15010.3 978
TIP31 515 40 40 10-5013 991 TIP49 523 350 40 30-150/0.3 978
TIP31A 515 60 40 10-50/3 991 TIP50 523 400 40 30-150/0.3 978
TIP31B 515 80 40 10-50/3 991 TIP100 526 60 80 1000-20000/3 1153
TIP31C 515 100 40 10-50/3 991 TIP10l 526 80 80 1000-20000/3 1153
TIP32 517 -40 40 10-501-3 987 TIP102 526 100 80 1000-20000/3 1153
TIP32A 517 -60 40 10-50/-3 987 TIP120 528 60 65 1000 min./3 998
TIP32B 517 -80 40 10-50/-3 987 TIP121 528 80 65 1000 min./3 998
TIP32C 517 -100 40 10-50/-3 987 TIP122 528 100 65 1000 min./3 998
TIP41 519 40 65 15-150/3 992 TIP125 531 -60 65 500 min./-0.75 997
TIP41A 519 60 65 15-150/3 992 TIP126 531 -80 65 500 min./-0.75 997
TIP41B 519 80 65 15-150/3 992 TIP127 531 -100 65 500 min./-0.75 997
TIP41C 519 100 65 15-150/3 992 TIP562 533 300 100 20 min'/l 1212
TIP42 521 -40 65 15-150/-3 996 TIP563 533 400 100 20 min.Jl 1212
12 ______________________________~-----------------------------------------
Triac Product Classification Chart
VOROM IT(RMS) VOROM IT(RMS)
Type Page (Max.) PGM (Max.) File Type Page (Max.) PGM (Max.) File
No. No. V W A No. No. No. V W A No.
2N5441 601 200 40 40 593 T2301A 542 100 10 2.5 911
2N5442 601 400 40 40 593 T2301B 542 200 10 2.5 911
2N5443 601 600 40 40 593 T23010 542 400 10 2.5 911
2N5444 601 200 40 40 593 T2301F 542 50 10 2.5 911
2N5445 601 400 40 40 593 T2302A 542 100 10 2.5 911
2N5446 601 600 40 40 593 T2302B 542 200 10 2.5 911
2N5567 580 200 16 10 457 T23020 542 400 10 2.5 911
2N5568 580 400 16 10 457 T2302F 542 50 10 2.5 911
2N5569 580 200 16 10 457 T2303F 545 50 10 2.5 912
2N5570 580 400 16 10 457 T2304B 548 200 10 0.5 441
2N5571 580 200 16 15 458 T23040 548 400 10 0.5 441
2N5572 580 400 16 15 458 T2305B 548 200 10 0.5 441
2N5573 580 200 16 15 458 T23050 548 400 10 0.5 441
2N5574 580 400 16 15 458 T2306A 607 100 10 2.5 406
2N5754 545 100 10 2.5 414 T2306B 607 200 10 2.5 406
2N5755 545 200 10 2.5 414 T23060 607 400 10 2.5 406
2N5756 545 400 10 2.5 414 T2310A 542 100 10 1.9 911
2N5757 545 600 10 2.5 414 T2310B 542 200 10 1.9 911
2N5806* 601 200 10 25 913 T231 00 542 400 10 1.9 911
2N5807* 601 400 10 25 913 T231 OF 542 50 10 1.9 911
2N5808* 601 500 10 25 913 T2311A 542 100 10 1.9 911
2N5809* 601 600 10 25 913 T2311B 542 200 10 1.9 911
2N6342A 593 200 20 12 1084 T2311D 542 400 10 1.9 911
2N6343A 593 400 20 12 1084 T2311F 542 50 10 1.9 911
2N6344A 593 600 20 12 1084 T2312A 542 100 10 1.9 911
2N6346A 593 200 20 12 1084 T2312B 542 200 10 1.9 911
2N6347A 593 400 20 12 1084 T23120 542 400 10 1.9 911
2N6348A 593 600 20 12 1084 T2312F 542 50 10 1.9 911
BTA20C 562 300 16 6 1298 T2313A 545 100 10 1.9 912
BTA200 562 400 16 6 1298 T2313B 545 200 10 1.9 912
BTA20E 562 500 16 6 1298 T23130 545 400 10 1.9 912
BTA21C 565 300 16 8 1299 T2313F 545 50 10 1.9 912
BTA21D 565 400 16 8 1299 T2313M 545 600 10 1.9 912
BTA21E 565 500 16 8 1299 T2316A 607 100 10 2.5 406
BTA2liB 568 200 16 10 1300 T2316B 607 200 10 2.5 406
BTA22C 568 300 16 10 1300 T23160 607 400 10 2.5 406
BTA220 568 400 16 10 1300 T2320A 550 100 10 2.5 1042
BTA22E 568 500 16 10 1300 T2320B 550 200 10 2.5 1042
BTA22M 568 600 16 10 1300 T2320C 550 300 10 2.5 1042
BTA23B 571 200 16 12 1301 T23200 550 400 10 2.5 1042
BTA23C 571 300 16 12 1301 T2320E 550 500 10 2.5 1042
BTA230 571 400 16 12 1301 T2320F 550 50 10 2.5 1042
BTA23E 571 500 16 12 1301 T2322A 550 100 10 2.5 1042
BTA23M 571 600 16 12 1301 T2322B 550 200 10 2.5 1042
MAC15-4 596 200 20 12 1086 T2322C 550 300 10 2.5 1042
MAC15-6 596 400 20 12 1086 T23220 550 400 10 2.5 1042
MAC15-8 596 600 20 12 1086 T2322E 550 500 10 2.5 1042
MAG15A-4 596 200 20 12 1086 T2322F 550 50 10 2.5 1042
MAC15A-6 596 400 20 12 1086 T2323A 550 100 10 2.5 1042
MAC15A-8 596 600 20 12 1086 T2323B 550 200 10 2.5 1042
SC141B 574 200 10 6 1167 T2323C 550 300 10 2.5 1042
SC1410 574 400 10 6 1167 T23230 550 400 10 2.5 1042
SC141E 574 500 10 6 1167 T2323E 550 500 10 2.5 1042
SC141M 574 600 10 6 1167 T2323F 550 50 10 2.5 1042
SC146B 574 200 10 10 1167 T2327A 550 100 10 2.5 1042
SC1460 574 400 10 10 1167 T2327B 550 200 10 2.5 1042
SC146E 574 500 10 10 1167 T2327C 550 300 10 2.5 1042
SC146M 574 600 10 10 1167 T23270 550 400 10 2.5 1042
T2300A 542 100 10 2.5 911 T2327E 550 500 10 2.5 1042
T2300B 542 200 10 2.5 911 T2327F 550 50 10 2.5 1042
T23000 542 400 10 2.5 911 T2500B 553 200 16 6 615
T2300F 542 50 10 2.5 911 T25000 553 400 16 6 615
*JAN-type vera Ions al80 available
13
VDROM IT(RMS) VDROM IT(RMS)
No. No: V W A No. No. No. V W A No.
T2506B 607 200 16 6 406 T4114E 585 500 16 10 443
T2506D 607 400 16 6 406 T4114M 585 600 16 10 443
T2700B 555 200 16 6 351 T4115B 585 200 16 6 443
T2700D 555 400 16 6 351 T4115D 585 400 16 6 443
T2706B 607 200 16 6 406 T4115E 585 500 16 6 443
T2706D 607 400 16 6 406 T4115M 585 600 16 6 443
T2710B 555 200 16 6 351 T4116B 607 200 16 15 406
T2710D 555 400 16 6 351 T4116D 607 400 16 15 406
T2716B 607 200 16 6 406 T4116M 607 600 16 15 406
T2716D 607 400 16 6 406 T4117B 607 200 16 10 406
T2800A 558 100 16 8 1314 T4117D 607 400 16 10 406
T2800B 558 200 16 8 1314 T4117M 607 600 16 10 406
T2800C 558 300 16 8 1314 T4120B 580 200 16 15 458
T2800D 558 400 16 8 1314 T4120D 580 400 16 15 458
T2800E 558 500 16 8 1314 T4120E 580 500 16 15 458
T2800F 558 50 16 8 1314 T4120F 580 50 16 15 458
T2800M 558 600 16 8 1314 T4120M 580 600 16 15 458
T2801A 558 100 16 6 1314 T4121B 580 200 16 10 457
T2801B 558 200 16 6 1314 T4121D 580 400 16 10 457
T2801C 558 300 16 6 1314 T4121E 580 500 16 10 457
T2801D 558 400 16 6 1314 T4121F 580 50 16 10 457
T2801E 558 500 16 6 1314 T4121M 580 600 16 10 457
T2801F 558 50 16 6 1314 T4126B 607 200 16 15 406
T2801M 558 600 16 6 1314 T4126D 607 400 16 15 406
T2802A 558 100 16 8 1314 T4126M 607 600 16 15 406
T2802B 558 200 16 8 1314 T4700B 588 200 16 15 300
T2802C 558 300 16 8 1314 T4700D 588 400 16 15 300
T2802D 558 400 16 8 1314 T4700E 588 500 16 15 300
T2802E 558 500 16 8 1314 T4700F 588 50 16 15 300
T2802F 558 50 16 8 1314 T6000B 590 200 16 16 1004
T2802M 558 600 16 8 1314 T6000C 590 300 16 16 1004
T2806B 607 200 16 8 406 T6000D 590 400 16 16 1004
T2806C 607 300 . ,16 8 406 T6000E 590 500 16 16 1004
T2806D 607 400 ;16 8 406 T6000F 590 50 16 16 1004
T2806M 607 600' 16 8 406 T6000M 590 600 16 16 1004
T2850A 577 100 16 8 1168 T6001B 590 200 16 16 1004
T2850B 577 200 16 8 1168 T6001C 590 300 16 16 1004
T2850D 577 400 16 8 1168 T6001D 590 400 16 16 1004
T2850E 577 500 16 8 1168 T6001E 590 500 16 16 1004
T2850M 577 600 16 8 1168 T6001F 590 50 16 16 1004
T2856B 607 200 16 8 406 T6001M 590 600 16 16 1004
T2856C 807 300 16 8 406 T6006B 590 200 16 16 1004
T2856D 607 400 16 6 406 T6006C 590 300 16 16 1004
T4100E 580 500 . 16 15 458 T6006D 590 400 16 16 1004
T4100F 580 50 16 15 458 TB006E 590 500 16 16 1004
T41~M 580 600 16 15 458 T6006M 590 600 16 16 1004
T4101'E 580 500 16 10 457 T6260B 598 200 40 25 1195
T4101F 580 50 16 10 457 T6260C 598 300 40 25 1195
T4101M 580 600 16 10 457 T6260D 598 400 40 25 1195
T4106B 607 200 16 15 406 T6260E 598 500 40 25 1195
T4106D 607 400 16 15 406 T6260M 598 600 40 25 1195
T4106M 607 600 16 15 406 T6261B 598 200 40 25 1195
T4110E \ 580 500 16 15 458 T6261C 598 300 40 25 1195
T4110F 580 50 16 15 458 T6261 0 598 400 40 25 1195
T4110M \580 600 16 15 458 T6261E 598 500 40 25 1195
T4111E 580 500 16 . 10 457 T6261M 598 600 40 25 1195
T4111F 580 50 16 10 457 T6401B 601 .200 40 30 459
T4111M 580 600 16 10 457 T6401D 601 400 40 30 459
T4113B 585 200 16 15 443 T6401E 601 , 500 40 30 459
T4113D 585 400 16 15 443 T6401F 601 50 40 30 459
T4113E 585 500 16 15 443 T6401M 601 600 40 30 459
T4113M 585 600 16 15 443 T6404B 605 200 42 40 487
T4114B 585 200 16 10 443 T6404D 605 400 42 40 487
T4114D 585 400 16 10 443 T6404E 605 500 42 40 487
14
T6405B 605 200 42 25 487 T6416D 607 400 40 40 406
T6405D 605 400 42 25 487 T6416M 607 600 40 40 406
T6405E 605 500 42 25 487 T6417B 607 200 40 30 406
T64068 607 200 42 40 406 T6417D 607 400 40 30 406
T6406D 607 400 42 40 406 T6417M 607 600 40 30 406
T6406E 607 500 42 40 406 T6420B 601 200 40 40 593
T6406M 607 600 42 40 406 T6420D 601 400 40 40 593
T6407B 607 200 40 30 406 T6420E 601 500 40 40 593
T6407D 607 400 40 30 406 T6420F 601 50 40 40 593
T6407E 607 500 40 30 406 T6420M 601 600 40 40 593
T6407M 607 600 40 30 406 T6421B 601 200 40 30 459
T6411B 601 200 40 30 459 T6421D 601 400 40 30 459
T6411D 601 400 40 30 459 T6421E 601 500 40 30 459
T6411E 601 500 40 30 459 T6421F 601 50 40 30 459
T6411F 601 50 40 30 459 T6421M 601 600 40 30 459
T6411M 601 600 40 30 459 T6426B 607 200 40 40 406
T6414B 605 200 42 40 487 T6426D 607 400 40 40 406
T6414D 605 400 42 40 487 T6426M 607 600 40 40 406
T6415B 605 200 42 25 487 T6427B 607 200 40 30 406
T6415D 605 400 42 25 487 T6427D 607 400 40 30 406
T6416B 607 200 40 40 406 T6427M 607 600 40 30 406
_________________________________________________________________________ 15
Silicon Controlled Rectifier Product Classification Chart
2N681 656 25 5 25 96 820600 613 400+ 0.5 4 654
2N682' 656 50 5 25 96 82060E 613 500+ 0.5 4 654
2N683' 656 100 5 25 96 82060F 613 50+ 0.5 4 654
2N684' 656 150 5 25 96 82060M 613 600+ 0.5 4 654
2N685' 656 200 5 25 96 820600 613 15+ 0.5 4 654
2N686' 656 250 5 25 96 82060Y 613 30+ 0.5 4 654
2N687' 656 300 5 25 96 82061A 613 100+ 0.5 4 654
2N688' 656 400 5 25 96 S20616 613 200+ 0.5 4 654
2N689 656 500 5 25 96 82061C 613 300+ 0.5 4 654
2N690' 656 600 5 25 96 820610 613 400+ 0.5 4 654
2N3228 619 200" 13 5.0 114 82061E 613 500+ 0.5 4 654
2N3525 619 400" 13 5.0 114 82061F 613 50+ 0.5 4 654
2N3650 663 100 40 35 408 82061M 613 600+ 0.5 4 654
2N3651 663 200 40 35 408 820610 613 15+ 0.5 4 654
2N3652 663 300 40 35 408 82061Y 613 30+ 0.5 4 654
2N3653 663 400 40 35 408 S2062A 613 100+ 0.5 4 654
2N3654 663 50 40 35 724 820626 613 200+ 0.5 4 654
2N3655 663 100 40 35 724 82062C 613 300+ 0.5 4 654
2N3656 663 200 40 35 724 820620 613 400+ 0.5 4 654
2N3657 663 300 40 35 724 82062E 613 500+ 0.5 4 654
2N3658 663 400 40 35 724 82062F 613 50+ 0.5 4 654
2N3668 639 100" 40 12.5 116 82062M 613 600+ 0.5 4 654
2N3669 639 200 40 12.5 116 S20620 613 15+ 0.5 4 654
2N3670 639 400 40 12.5 116 82062Y 613 30+ 0.5 4 654
2N3870 653 100 40 35 578 826006 616 200 40 7 496
2N3.871 653 200 40 35 578 826000 616 400 40 7 496
2N3872 653 400 40 35 578 82600M 616 600 40 7 496
2N3873 653 600 40 35 578 826106 616 200 40 7 496
2N3896 653 100 40 35 578 826100 616 400 40 7 496
2N3897 653 200 40 35 578 82610M 616 600 40 7 496
2N3898 653 400 40 35 578 826206 616 200 40 7 496
2N3899 653 600 ' 40 35 578 826200 616 400 40 7 496
2N4101 619 600 13 5.0 114 82620M 616 600 40 7 496
2N41 03 639 600 40 12.5 116 827106 619 200" 13 5.0:1: 266
2N6394 646 50 16 12 891 827100 619 400" 13 5.0t 266
2N6395 646 100 16 12 891 82710M 619 600 A 13 5.0:1: 266
2N6396 646 200 16 12 891 82800A 625 100 16 10 890
2N6397 646 400 16 12 891 828006 625 200 16 10 890
2N6398 646 600 16 12 891 82800C 625 300 16 10 890
2N6400 646 50 16 16 892 828000 625 400 16 10 890
2N6401 646 100 16 16 892 82800E 625 500 16 10 890
2N6402 646 200 16 16 892 82800F 625 50 16 10 890
2N6403 646 400 16 16 892 82800M 625 600 16 10 890
2N6404 646 600 16 16 892 828008 625 700 16 10 890
Cl0SA 610 100+ 0.5 3.5 1005 83060A 627 100+ 0.5 3 1307
Cl066 610 200+ 0.5 3.5 1005 830606 627 200+ 0.5 3 1307
Cl06C 610 300+ 0.5 3.5 1005 830600 627 400+ 0.5 3 1307
Cl060 610 400+ 0.5 3.5 1005 S3060F 627 50+ 0.5 3 1307
Cl06E 610 500+ 0.5 3.5 1005 83060M 627 600+ 0.5 3 1307
Cl06F 610 50+ 0.5 3.5 1005 S37006 630 200 13 5 306
Cl06M 610 600+ 0.5 3.5 1005 837000 630 400 13 5 306
C122A 622 100 16 8 1173 83700M 630 600 13 5 306
C1226 622 200 16 8 1173 S3701M 632 600 25 5 476
C122C 622 300 16 8 1173 837028 633 700 25 5 1315
C1220 622 . 400 16 8 1173 837038F 633 750 25 5 1315
C122E 622 500 16 8 1173 S3705M 633 600 25 5 1315
C122F 622 50 16 8 1173 83706E 633 500 25 5 1315
C122M 622 600 16 8 1173 83900Et 636 500 25 8 938
82060A 613 100+ 0.5 4 654 83900MFt 636 650 25 8 938
820606 613 200+ 0.5 4 654 839008t 636 700 25 8 938
S2060C 613 300+ 0.5 4 654 839008Ft 636 750 25 8 938
• JAN-type versions also available tlFRMS +VORXM "VFBOM tlTR - Integrated Thyrlstor/Recllfler
16
Silicon Controlled Rectifier Product Classification Chart
83901Mt 636 600 25 8 938 86210A 650 100 40 20 418
83901MFt 636 650 25 8 938 862109 650 200 40 20 418
839018t 636 700 25 8 938 862100 650 400 40 20 418
84060A 642 100' 0.5 10 1306 86210M 650 600 40 20 418
840609 642 200' 0.5 10 1306 86220A 650 100 40 20 418
84060C 642 300' 0.5 10 1306 862209 650 200 40 20 418
840600 642 400+ 0.5 10 1306 862200 650 400 40 20 418
84060E 642 500' 0.5 10 1306 86220M 650 600 40 20 418
84060F 642 50' 0.5 10 1306 86420A 653 100 40 35 578
84060M 642 600+ 0.5 10 1306 864209 653 200 40 35 578
84060N 642 800+ 0.5 10 1306 864200 653 400 40 35 578
840608 642 700+ 0.5 10 1306 86420M 653 600 40 35 578
84060U 642 25+ 0.5 10 1306 86493M 658 600 40 35 247
858008 644 200 13 5 1051 873108 660 200 40 40 975
S5800C 644 300 13 5 1051 87310C 660 300 40 40 975
858000 644 400 13 5 1051 873100 660 400 40 40 975
85800E 644 500 13 5 1051 87310E 660 500 40 40 975
85800M 644 600 13 5 1051 87310M 660 600 40 40 975
86200A 650 100 40 20 418 87310N 660 800 40 40 975
862008 650 200 40 20 418 87410M 663 600 40 35 408
862000 650 400 40 20 418 874121\01 663 600 40 35 724
86200M 650 600 40 20 418
tJTR - Integrated Thyristor/Rectifier +VORXM
___________________________________________________________________________ 17
18 _________________________________________________________________________
Guide to Product Selection
_ _ _ _ _ _ _ _ _ _ _ _ _ 19
GUIDE TO PRODUCT SELECTION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
Power Transistors Product Matrix
Hometaxial-Base (Single-Diffused) N-P-N Types
'emax. = 1.5 A 'emax. = 4A 'emax. =4A 'emax. = 3A 'emax. = 3A 'emax. =7 A

t,-.yp. = 1.5 MHz fTtyP. = 1 MHz t,-typ. = 1 MHz fTtyP. = 0.8 MHz f,-typ. = 0.8 MHz t,-typ. = 1 MHz
TO-205MOIT0-39 TO-213MAlTO-a; TO-220 TQ-213MAlTO-a; TO-220 TO-220
2N1482 2N3054 2N5298 2N3441 2N6478 2N5496

Family Family Family Family Family Family
BOX24
2N1479 40250 2N5296 2N6263 ReA3441 2N5490
VCEO=40V VCEO=40V VCEO=40V VCEO = 120V VCEO = 120V VCEO=40V
hFE = 20-60 hFE = 25-100 hFE = 30-120 hFE = 20-100 hFE = 20-150 hFE = 20-100
@0.2A @1.5A @1 A @0.5A @0.5A @2A
PT= 5W PT = 29W PT = 36 W PT~20W PT=36W PT=50W
2N1482 2N3054 2N5298 2N3441 2N6477 2N5492

VCEO = 55 V VCEO = 55 V VCEO=60V VCEO = 140V VCEO = 120 V VCEO = 55 V
hFE = 35-100 hFE = 25-150 hFE = 20-80 hFE = 25-100 hFE" 25-150 hFE = 20-100
@0.2A @0.5A @1.5A @0.5A @1A @2.5A
PT= 5W PT=25W PT = 36 W PT = 25 W PT=50W PT=50W
40348 2N6261 2N5294 2N6264 2N6478 2N5496

VCEO = 65 V VCEO=80V VCEO=70V VCEO = 150V VCEO = 140 V VCEO = 70 V
@0.3A @1.5A @0.5A @1A @1A @3.5A
PT=8.75W PT=50W PT = 36W PT = 50W PT = 50 W PT=50W
'emax. = 15A 'emax.: 16A 'emax. = 10A 'emax. = 30A 'emax. = 16 A

fTtyP. = 1.5 MHz t,-typ. = 1.5 MHz ITtyP. = 0.4 MHz fTtyP. = 1.5 MHz fTtyP. = 0.7 MHz
TO-2D4MAlTO-3 TO-220 TO-204MAlTO-3 TO-2D4MAlTO-3 TO-2D4MAlTO-3
2N3055 2N6103 2N3442 2N3772 2N3773

Family Family Family Family Family
2N6371 2N61 03 2N4347 2N3771 2N4348

VCEO = 40 V VCEO=40V VCEO = 120 V VCEO = 40 V VCEO = 120 V
hFE = 15-60 hFE = 15-60 hFE = 15-60 hFE = 15-60 hFE = 15-60
@8A @8A @2A @15A @5A
PT=117W PT = 75 W PT = 100W PT= 150W PT = 120 W
B0182 BOY37
2N3055 2N6099 2N3442 2N3772 2N3773
VCEO = 60 V VCEO=60V VCEO = 140V VCEO =60 V VCEO = 140 V
@4A @4A @3A @10A @8A
PT= 115W PT= 75 W PT=117W PT=150W PT = 150 W
2N6254 2N6101 2N6262 ReS258 2N6259

VCEO=80V VCEO=70V VCEO = 150 V VCEO = 60V VCEO = 150V
@5A @5A @3A @10A @8A
PT= 150W PT = 75W PT= 150W PT=250W PT=250W
20 __________________~-----------------------------------------------------
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GUIDE TO PRODUCT SELECTION

Epitaxial-Base N-P-N and P-N-P Types
...
lema •• = -3.5 A lema•• =6A lema•• =-6A ICmax. =7 A Icma•• = -7 A Icma•. = 15A Icma•• = 15A
fTtyp. = 20 MHz fTtyp. = 8 MHz trtyp. = 10 MHz fTtyp. = 8 MHz fTtyp. = 10 MHz trtyp. = 6 MHz trtyp. = 8 MHz
T()"205MDIT0-39 T()"213MAlT0-66 T()"213MAlT0-66 TO-220 TO-220 TO-204MAlTO-3 TO~204MAlTO-3
2N5783 2N6374 2N5954 2N6292 2N61 07 2N3716 2N6472

Family Family Family Family Family Family Family
P-N-P N-P-N P-N-P N-P-N P-N-P N-P-N N-P-N
2N5783 2N6374 2N5956 2N6669 2N6111 2N6569 2N6470

VCEO= -40 V VCEO = 40V VCEO=-40V VCEO = 30V VCEO= -30 V VCEO = 40V VCEO=40V
. hFE = 20-100 hFE = 20-100 hFE = 20-100 hFE = 20-100 hFE = 30-150 hFE = 15-120 hFE = 20-150
@-1.6A @3A @-3A @fjA @-3A @4A @5A
PT= lOW PT=40W PT=40W PT=40W PT=40W PT= looW PT=125W
2N5782 2N6372 2N5954 2N6292 2N6107 2N3055 2N6471

VCEO=-50V VCEO = 80V VCEO =-80V VCEO=70V VCEO=-70V VCEO = 60V VCEO=60V
hFE = 20-100 hFE = 20-100 hFE = 20-100 hFE = 30-150 hFE = 30-150 hFE = 20-70 hFE = 20-150
@-1.2A @2A @-2A @2A @-2A @4A @5A
PT= lOW PT=40W PT=40W PT=40W PT=40W PT= 115W PT=125W
2N5781 2N6465 2N6467 2N6473 2N6475 2N3716 2N6472

VCEO = -65 V VCEO=80V VCEO= -100 V VCEO= 100V VCEO= -100 V VCEO = 80V VCEO=80V
hFE = 20-100 hFE = 15-150 hFE = 15-150 hFE = 15-150 hFE = 15-150 hFE = 30 hFE = 20-150
@-1 A @1.5A @-1.5A @1.5A @-1.5A @3A @5A
PT= lOW PT=40W PT=40W PT=40W PT=40W PT= 150W PT = 125 W
2N6466 2N6468 2N6474 2N6476 2N5878

VCEO= 120V VCEO= -liOV VCEO = 120V VCEO= -120V VCEO=80V
@1.5A @-1.5A @1.5A @-1.5A @4A
PT=40W PT=40W PT=40W PT=40W PT= 150W
Icma•• =-15A ICmax. = 15A ICmax. = -15 A ICmax. =30A ICmax. = 20A ICmax. = -20 A
trtyp. = 16 MHz fTtyp. = 8 MHz ITtyP. = 8 MHz ITlyp. = 6 MHz fTtyp. = 4 MHz trtyp. = 4 MHz
TO-204MAlTO-3 TO-220 TO-220 TO-204MAlTO-3 TO-204MAlTO-3 TO-204MAlTO-3
2N6247 2N6488 2N6491 2N5303 RCA8638 RCA9116

P-N-P N-P-N P-N-P N-P-N N-P-N P-N-P
2N6594 2N6486 2N6489 2N5301 RCA8638E RCA9116E

VCEO = -40 V VCEO=40V VCEO = -40 V VCEO = 40V VCEO = lOOV VCEO= -100 V
@-4A @5A @-5A @15A @7.5A @-7.5A
PT= looW PT=75W PT=75W PT=200W PT=2ooW Pp 200 W
2N5875 2N6487 2N6490 2N5302 .RCA3773 2N6609

VCEO=-60V VCEO=60V VCEO = -60 V VCEO=60V VCEO= 140V VCEO =-140V
@-4A @5A @-5A @15A @SA @-8A
PT= 150W PT=75W PT=75W PT=2ooW PT= 150W PT= 150W
2N5880 2N6488 2N6491 2N5303 RCA8638C RCA9116C

VCEO= -SO V VCEO=80V VCEO=-80V VCEO = SO V VCEO= 140V VCEO=-140V
@-6A @5A @-5A @10A @5A @-5A
PT= 160W PT=75W PT=75W PT=200W PT=2ooW PT=2ooW
2N6248 MJ15003 MJl5004

VCEO= -100 V VCEO= 140V VCEO= -140 V
hFE = 20-100 hFE = 25-150 hFE = 25-150
@-5A @5A @-5A
PT= 125W PT=250W PT=250W
_________________________________________~_________________________ 21
GUIDE TO PRODUCT SELECTION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _- - - -
High-Speed-Switching N-P-N and P-N-P Types
lemu.~1A lemu.=-1A lemu.=2A lemu.=-2A lemu.=7A

fytyp. = .100 MHz frtyp. = 100 MHz frtyp. = 75 MHz frtyp. = 75 MHz frtyp. = 100 MHz
T0405MDJTO.3II TO-2CI5MDtr~ T0405MDtr04ll TO-205MDtro.3ll TO-213MA1TO-88
2N2102 2N4038 2N5320 2N5322 2N3878

Family Family Family Family Family
N-P-N P-N-P N-P-N P-N-P N-P-N
2N3053 2N4037 2N5321 2N5323 2N5202

VCEO=40V VCEO=-40V VCEO=50V VCEO= -50 V VCEO=50V
@0.15A @-O.15A @0.5A @-O.5A @4A
PT=5W PT=7W PT= lOW PT= lOW PT=35W
2N2270 2N4038 2NS320 2NS322 2N3878

VCEO =45 V VCEO=-65V VCEO =75V VCEO =-75V VCEO=50V
hFE = 50-200 hFE = 40-140 hFE = 30-130 hFE = 30-130 hFE=20mln.
@0.15A @-O.15A @0.5A @-0.5A @4A
PT=5W PT=7W PT= lOW PT= lOW PT=35W
2N2102 2N4314 2N3879

VCEO=65V VCEO= -65 V VCEO = 75V
hFE = 40-120 hFE = 50-250 hFE = 20-80
@0.15A @-O.15A @4A
PT=5W PT=7W PT=35W
2N240S' 2NSSoo
VCEO= 90V VCEO=90V
hFE = 60-200 hFE = 15-60
@0.15A @3A
PT=5W PT=35W
lemu. =7 A lemu. = 12A lemu. =20A lemu. =30A lemax. =2SA lemax.=SOA
frtyp. = 100 MHz 'Ttyp.= 150 MHz frtyp. = 90 MHz frtyp. = 100 MHz r,-typ. = SO MHz frtyp. = 100 MHz
TO-220 Radial Pkg. TO-204MAtrO-3 TO-204MAtrO-3 TO-204MAtrO-3 Modified TO-3
2N8704 2N8480 2N5038 2NS871 2N6888 2N8033

N-P-N N-P-N N-P-N N-P-N N-P-N N-P-N
BUW84A
2N8702 2N8478 2N5039 2NS871 2N8888 2N8032
VCEO=90V VCEO=60V VCEO=75V VCEO= 120V VCEO= 160V VCEO = 90V
hFE= 20 min. hFE = 20-300 hFE = 20-100 hFE= 20 min. hFE= 15 min. hFE = 10-50
@5A @12A @10A @20A @25A @50A .
PT=50W PT=87W PT= 140W PT=140W PT=2ooW PT= 140W
BUW84B
2N8703 2N8480 2NS038 2N5872 2N8887 2N8033
VCEO = 110V VCEO=80V VCEO=9aV VCEO = 90 V VCEO = 180V VCEO= 120V
hFE = 20 min. hFE = 20-300 hFE = 20-100 hFE=20min. hFE = 15 min. hFE = 10-50
@5A @12A @12A @20A @2SA @40A
PT=50W PT=87W PT= 140W PT= 140W PT=2ooW PT. = 140W
BUW84e
2N8704 2N8354 2N8888
VCEO= 130V VCEO = 120V VCEO= 200 V
hFE= 20 min. hFE = 10-100 hFE= 15 min.
@5A @10A @25A
PT=50W PT= 140W PT=2ooW
22 __________________~--__--__---------------------------------
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GUIDE TO PRODUCT SELECTION
High-Voltage N-P-N and P-N-P Types
lemu.=1A lemu.=-1 A lemax. =5 A lemu.=-5A lemu.=7A lemu.=5A

fytyp. = 25 MHz· trlyp. = 35 MHz fytyp. = 25 MHz trlyp. = 30 MHz trlyp. = 7 MHz fytyp. = 5 MHz
To-205MD/T0-39 To-2OSMD/T0-39 TQ-213MAlTo.e& To-213MAlTo.e& TQ-213MAlTo.e& TO-204MAlTO-3
2N3439 2N5415 2N3585 2N8213 2N8079 2N5240

N-P-N P-N-P N-P-N P-N-P N-P-N N-P-N
40348 ReA1A18 2N3583 2N8211 2N8078 2N5239

VCER = 175 V VCEO= -100 V VCEO= 175V VCEO=-225 V VCEO = 250 V VCEO =225V
hFE = 25 hFE = 40-250 hFE = 40-200 hFE = 10-100 hFE = 12-70 hFE = 20-80
@10mA @-10mA @0.75A @-1 A @1.2A @2A
PT=10W PT= 10W Pp35W PT=35W PT=45W PT= 100W
_ .. _.- ~
2N3440 2N5415 2N3584 2N8213 2N8077 2N5240

VCEO=250V VCEO = -200 V VCEO = 250 V VCEO=-350V VCEO= 275 V VCEO =3OOV
@20mA @-50mA @1A @-1A @2A @2A
PT= 10W PT= 10W PT=35W PT=35W Pr=45W PT=100W
2N3439 2N5418 . 2N3585 2N6214 2N8079 2N5840

VCEO=350V VCEO = -300 V VCEO = 300 V VCEO =-400 V VCEO = 350 V VCEO = 350 V
hFE = 40-160 hFE = 30-120 hFE = 25-100 hFE =10-100 hFE = 12-50 hFE = 10-50
@20mA @-50mA @1A @-1A @1.2A . @2A
PT= 10W Pr= 10W PT=35W PT=35W PT=45W PT=100W
lemax.= 10A lemu.=8A lemax. =7 A ICmax. = 10A Icmax. =8A ICmax.= 15 ICmu. = 15A
fytyp. = 8 MHz fytyp. = 15 MHz ITiyp. = 2 MHz trlyp. = 20 MHz fytyp. = 20 MHz trlyp. = 20 MHz fytyp. = 20 MHz
TO-204MAlTO-3 TO-204MAlTO-3 TO-204MAlTO-3 TO-204MAlTO-3 TO-204MAlTO-3 TO-204MAlTO-3 TQ-211MAlTo-&1
2N8251 2N6308 2N8510 RCA8766 2N6873 2N8678 2N8893

Family Family Family Family Family Family Family
N-P-N N-P-N N-P-N N-P-N N-P-N N-P-N N-P-N
2N8249 2N8306 2N65io RCA8766 2N8871- 2N8674- 2N6689-

VCEO = 200 V VCEO = 250 V VCEO = 200 V VCEO =350V VCEO =300V VCEO = 300 V VCEO= 300 V
hFE = 10-50 hFE = 15-75 hFE = 10-50 hFE = 100 hFE = 10-40 hFE = 8-20 hFE = 8-20
@10A @3A @3A @6A @5A @10A @10A
PT=175W PT = 125W PT= 120W Pr= 150W PT= 100W PT=175W Pr= 175W
2N8250 2N8307 2N6514 RCA8768B 2N6872- 2N8878- 2N6690-

VCEO= 275 V VCEO= ~OOV VCEO = 300 V VCEO = 400 V VCEO = 350 V VCEO'= 300 V VCEO= 400 V
hFE = 8-50 hFE = 15-75 hFE = 10-50 hFE = 100 hFE = 10-40 hFE=8 hFE = 8-20
'@10A @3A @5A @6A @5A @15A @10A
PT= 175W PT= 125W PT= 120W PT= 150W PT= 150W PT= 175 W Pr = 175W
2N8251 2N8308 2N8513 RCA8766D 2N8873- 2N8878- 2N8693-

VCEO=350V VCEO = 350 V VCEO= 350 V VCEO = 450 V VCEO = 400 V V.CEO =400V VCEO = 400 V
hFE = 6-50 hFE = 12-60 hFE = 10-50 hFE = 100 hFE = 10-40 hFE= 8 hFE= 8
@10A @3A @4A @6A @5A @15A @15A
Pr= 175W PT= 125W PT= 120W PT=150W PT= 150W PT= 175W Pr= 175W
- SwltchMax tranilitor.
___________________________________________ 23
GUIDE TO PRODUCT SELECTION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ~ _ _ __
Monolithic Darlington N-P-N and P-N-P Types
'cmu. = -10 A .cm.x. = 10A .cmu. = 10A .cmu. = -10 A 'Cmu. = 20A 'Cm.x. = -20 A 'Cmu. =8A 'Cm.x.= 10A
fTtYp. = 40 MHz fytyp. = 80 MHz fytyp. = 80 MHz fytyp. = 40 MHz fTtYp. = 15 MHz fTtYP. = 50 MHz fTtYp. = 80 MHz fytyp. = 20 MHz
TO-220 TO-220 TO-204MAlTO-3 TO-204MAlTO-3 TO-204MAlTO-3 TO-204MAlTO-3 TO-213MAlTC>.- TO-204MAlTO-3
2N8888 2N8388 2N8385 2N8850 2N8284 2N8287 2N8537 RCA8788

Family Family Family Family Family Family Family Family
P-N-P N-P-N N-P-N P-N-P N-P-N P-N-P N-P-N N-P-N
2N8888 2N8386 2N8055 2N8848 2N8282 2N8285 2N8534 RCA8788

VCEO = -40 V VCEO=40V VCEO=60V VCEO= -40 V VCEO = 60 V VCEO = -60 V VCEO= 80V VCEO =3S0 V
hFE = lk-20k hFE = lk-20k hFE = 0.7Sk-18k hFE = lk-20k hFE = 0.7Sk-18k hFE = 0.7Sk-18k hFE = lk-l0k hFE = 100
@-3A @3A @4A @-SA @10A @-10A @SA @6A
PT=6S W PT=6SW PT= looW PT=70W PT= 160W PT= 160W PT=36W PT= lS0W
2N8887 2N8387 2N8383 2N8649 2N6283 2N6288 2N8535 RCA87888

VCEO= -60 V VCEO = 60V VCEO=40V VCEO = -60 V VCEO=80V VCEO = -80 V VCEO = 100V VCEO =400V
hFE = lk-20k hFE = lk-20k hFE = lk-20k hFE = lk-20k hFE = 0.7Sk-18k hFE = 0.7Sk-18k hFE = 0.Sk-l0k hFE = 100
@-SA @SA @SA @-SA @10A @-10A @3A @6A
PT=6SW PT=6SW PT= looW PT=70W PT= 160W PT= 160W PT=36W PT= lS0W
2N8888 2N8388 2N6385 2N6650 2N6284 2N6287 2N8536 RCA8788D

VCEO = -80 V VCEO=80V VCEO = 80 V VCEO= -80 V VCEO= l00V VCEO= -100 V VCEO = l00V VCEO = 4S0 V
hFE = lk-20k hFE = lk-20k hFE = lk-20k hFE = lk-20k hFE = 0.7Sk-18k hFE = 0.7Sk-18k hFE = lk-l0k hFE = 100
@-SA @SA @SA @-SA @10A @-10A @SA @6A
PT=6SW PT=6SW PT = 100 W PT=70W PT= 160W PT= 160W Py=36W PT= lS0W
2N6533 2N6578 2N6537

VCEO = 120V VCEO = 120V VCEO = 120V
hFE = lk-20k hFE ~ 2k-20k hFE = lk-l0k
@3A @4A @3A
PT=6SW PT= 120W PT=36W
24 _________________________________________________________________
GUIDE TO PRODUCT SELECTION
Transistors for Audio-Amplifier Applications
RCA or or PT
Types PNP PNP
Full Complementary Output Darlington Pairs Quasi Complementary Output Transistors (Cont'd)
2N63BS NPN TO-3 1000 SA/3V BOV 100W BOSSOB NPN TO-204MA 10 2A/4V 275V 1S0W
2N66S0 PNP TO-3 1000 -SA/3V -80V 70W BUX18 NPN TO·3 10 4A/3V 375V 120W
BDX33 NPN To-no 7S0 4A/3V 100V 70W
RCA1A03 NPN TO-39 70 0.3A/4V 9SV lOW
BOX34 PNP TO·220 7S0 --4A/-3V -100V 70W
2N62B4 PNP TO-3 7S0 -"IOA/-3V -100V 160W RCA1A04 PNP TO-39 70 -0.3A/-4V -9SV lOW
2N6287 NPN TO-3 7S0 10A/3V 100V 160W RCA1AOS PNP TO-39 SO -0.lSA/-4V -7SV 7W
RCA1A06 NPN TO-39 SO 0.lSA/4V 7SV sw
RCA1 B01 NPN TO-3 20 4A/4V 9SV 11SW
Full Complementary Output Transistor Pairs RCA1 B04 NPN TO-3 lS 2A/SV 200V lS0W
2N30SS NPN TO-3 20 4A/4V 70V 11SW RCA1BOS NPN TO-3 lS 2A/SV 2S0V lS0W
BOX1B PNP TO-3 20 -4A/-4V -70V 11SW RCA1 B06 NPN TO-3 10 4A/4V 100V 1S0W
2N6292 NPN TO-220 30 3A/4V 80V 40W RCA1B09 NPN TO-3 40 2A/SV 2S0V 1S0W
2N6107 PNP TO-220 30 -3A/-4V -80V 40W RCAl C03 NPN TO-220 SO 1A/4V 100V 40W
2N64B8 NPN To-no 20 SA/4V 8S 7SW RCA1C04 PNP To-no SO -lA/-4V -lOOV 40W
2N6491 PNP TO-220 20 -SA/-4V -8SV 7SW RCA1 C09 NPN To-no 20 4A/4V 6SV 7SW
B0239-243 NPN To-no lS 3A/4V 100V 70W RCA1C12 NPN TO-220 40 1A12V 120V 40W
B024O-244 PNP TO-220 lS -3A/-4V -lOOV 70W RCA1C13 PNP TO-220 40 -lA/2V -120V 40W
RCA1AOS PNP TO-39 SO -O.lSA/-4V -7SV 7W
RCA1A06 NPN TO-39 SO 0.lSA/4V 7SV SW
RCA1COS NPN TO-220AB 20 3A/4V SOV 40W Complementary Driver Pairs/Predrivers
RCA1C06 PNP TO-220AB 20 -3A/-4V -SOY 40W 2N2102 NPN TO-39 2S 0.1A/SV 100V SW
807S0 PNP TO·204MA 15 -7.SA/-2V -lOOV 200W 2N3440 NPN TO-39 40 20 mA/10V 400V lOW
B0751 NPN TO·204MA 15 7.5A/2V 100V 200W 2N4036 PNP TO-39 SO 0.lSA/10V 6SV 7W
B07S0C PNP TO·204MA 25 -SA/-2V -140V 2SOW
B07S1C NPN TO·204MA 25 SA/2V 140V 2S0W 2NS320 NPN TO·39 40 0.SA/4V 90V lOW -
BOSOO PNP TO·220AB 15 -SA/-4V -SSV 75W 2NS3n PNP TO-39 40 -O.SA/-4V -90V lOW
B0500B PNP TO·220AB 20 -3.5A/-4V -8SV 7SW 2NS41S PNP TO-39 20 -SOmA/-l OV -300V lOW
B0501B NPN TO·220AB 20 3.5A/4V 85V 75W B0239-243 NPN To-no lS 3A/4V 100V 70W
I;ICA1C10 NPN TO·220 50 1.5A/4V 40V 40W BD240-244 PNP TO-220 lS -3A/-4V -lOOV 70W
RCA1Cl1 PNP TO·220 50 -1.5A/-4V -40V 40W RCA1AOl NPN TO-39 40 0.01A/4V 70V 5W
RCA8638C NPN TO-3 15 8A/4V l40V 200W RCA1A09 NPN TO-39 20 O.01A/10V 17SV lOW
RCA91l6C PNP TO·3 15 -8A/4V -140V 200w RCA1A10 PNP TO-39 40 -0.01 A/-10V -175V lOW
RCAB63BC NPN TO-3 15 BA/4V 140V 200W RCA1A15 NPN TO·39 20 0.01A/10V 100V lOW
HCA9116C PNP TO-3 15 -aA/4V -140V 200W RCA1A16 PNP TO-39 40 -0.01 A/-10V -lOOV lOW
RCAl E02 NPN TO-66 30 0.3A/2V 17SV 35W
Quasi Complementary Output Transistors RCAl E03 PNP TO-66 30 -0.3A/-2V -175V 35W
2N305S NPN TO-3 20 4A/4V 70V 115W
2N30SS NPN TO-3 20 SA/4V 80V 150W
(Hametaxial) Protection Circuit Types
2N3442 NPN TO-3 20 3A/2V lSOV 150W
NPN RCA1A18 NPN TO-39 40 0.01Al4V 10V SW
2N3772 TO-3 1S 10A/4V 70V 250W
RCA1A19 PNP TO-39 40 -0.01A/-4V -lOY 7W
2N3773 NPN TO-3 lS 8A/4V 160V 2S0W
2N5298 NPN To-no 20 5A/4V 7SV 7SW
2N5496 NPN TO-220 20 3.SA/4V 70V 36W
2N6103 NPN TO·3 20 SA/4V 7SV 75W
2N6292 NPN TO-220 30 2.SA/4V BOV 40W
2N64B8 NPN TO-220 20 SA/4V 90V 7SW
Input Device Types
2N6510 NPN TO·3 10 4A/3V 300V 120W RCA1A02 PNP TO-39 30 -0.1 A/-10V -SOY 7W
IlOS50 NPN TO·204MA 15 4A/4V 130V 1SOW RCA1A11 NPN TO-39 40 0.01A/10V 17SV lOW
--------------------------________________----------------------------25
GUIDE TO PRODUCT SELECTION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
Power Hybrid Comparison Chart

Multi-Purpose High-Power Operational Amplifiers
HC2000H HC2500
RI
820 fl
4 PHASE
~
COMP
4PLATE
@
*SASE
PLATE
D2
R6
56 n
-Vs
V FB
92CS-17514R2 'ELECTRICALLY ISLOL-A-TE-D....
F-RO-M-,N-T-E+RN-AL-CI-RC-UIT-RY--------®
Schematic diagram of type HC2000H operational amplifier. Schematic diagram of type HC2500 operational amplifier.
HC2000H - Applications HC2500 - Applications
Motor control, magnetic-deflection amplifiers, solenoid Low-distortion, high·power amplifiers for audio and other
driver, low-frequency oscillator amplifier, voltage rE!gu- end uses where internal overload protection is not required.
lators, constant current sQurce, inverting and non·inverting
unity-gain amplifier.
Ratings and i=eatures for HC2000H and HC2500
Ratings: Features:
"
SUPPLY VOLTAGE: Bandwidth: 30 kHz at 60 W

Between leads 1 and 10 ..................... 75 V High power output: up to 100 W (rms)
OUTPUT CURRENT (peak) ................... 7A
Single or split power supply:
OPERATING TEMPERATURE RANGE ... ·55 to +1500 C 80 to 75 V single, ±15 to ±37.5 V split
COMPARISON CHART
OUTPUT
1M DIST. PROTECTION OPERATING FREQUENCY COMMUTATING
TYPE 200 mW
@
NETWORK MODE COMPENSATION DIODES
LC FILTER
HC2000H 0.6% YES CLASS B YES
ON OUTPUT
HC2500 0.06% NO 'CLASS AB CAPACITOR ON NO

SIGNAL TERMINALS
Socket for both types: RCA part DG·293A, or

Electronic Essentials, 210 Elizabeth St., New York, N.Y. 10012, Part No. MS5-1000
26-----------------------------------------------------------------
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GUIDE TO PRODUCT SEI.ECTI9N
Triac Product Matrix
RCA TO-205MA/TO-5 Mod_ TO-205MA/TO-5 With TO-202AB

Triacs Modified Heat Radiator VERSATAB
IT(RMS) 2_5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A
ITSM(60 Hz) 25A 25A 25A 25A 25A 25A 25A 25A 25A 25A
VDROM(V) 50 T2300F T2301F T2302F T2303F T2310F T2311F T2312F T2313F T2320F T2327F
100 T2300A T2301A T2302A 2N5754 T2310A T2311A T2312A T2313A T2320A T2327A
200 T2300B T2301B T2302B 2N5755 T2310B T2311 B T2312B T2313B T2320B T2327B
"E 300 T2320C T2327C
'"
"tl
c::: 400 T2300D T2301D T2302D 2N5756 T2310D T2311D T2312D T2313D T2320D T2327D
....
'"
(I)
500 T2320E T2327E
600 2N5757 T2313M
IGT(mA) 1+,111- 3 4 10 25 3 4 10 25 3 5
1-,111+ 3 4 10 40 3 4 10 40 3 5
VGT(V) All Modes 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2
VDROM(V) 100 T2306A T2316A
'"
'" .s:
'"0 u....
-
.... 200 T2306B T2316B
> .- 400 T2306D T2316D
E~ IGT(mA) 1+,111+ 45 45
N '" VGT(V) 1+,111+ 1.5 1.5
IT(RMS) 0.5A 0.5A
c::: VDROM(V) 200 T23048 T23058
N 0
:1:'" 400 T2304D T2305D
of! IGT(mA) 1+,111- 10 25
0'"
'<tc,
0 1-,111+ 10 40
VGT(V) All Modes 2.2 2.2
jfo.213MA/
TO-66
RCA TO-202AB TO-213MA/ With Heat TO-220AB
Triacs VERSATAB TO-66 Radiator VERSAWATT
ISOWATT*
IT(RMS) 2.5A 2.5A 6A 15A 6A 6A 6A 8A 8A 8A
VDROM(V) 50 T2322F T2323F T2801F T2800F T2802F T2850F
100 T2322A T2323A T2801A T2800A T2802A T2850A
"E 200 T23228 T23238 T27008 T4700B T27108 T2500B T28018 T2800B T2e02B T28508
'"
.....
"tl
c::: 300 T2322C T2323C T2801C T2800C T2802C
(I) 400 T2322D T2323D T2700D T4700D T2710D T2500D T2801D T2800D T2802D T2850D
500 T2322E T2323E T2801E T2800E T2802E T2850E
600 '128011\11 T2800M T2802M T2850M
IGT(mA) 1+,111- 10 25 25 30 25 25 80 25 50 25
1-,111+ 10 40 40 80 40 60 - 60 - 60
VGT(V) All Modes 2.2 2.2 2.2 2.5 2.2 2.5 4.0" 2.5 2.5" 2.5
VDROM(V) 100
'"'"
:l.s: 200 T2706B T4706B T2716B T2506B T2806B T28568
o.s.-
> 400 T2706D T4706D T2716D T2506D T2806D T2856D
o 3: IGT(mA) 1+,111+
.. (I) 45 45 45 45 45 45
'"
N VGT(V) 1+,111+ 1.5 1.5 1.5 1.5 1.5 1.5
*ISOWATT - Mounting tab electrically isolated from electrodes "'1+, In- only
________________________________________________________________________ 27
GUIDE TO PRODUCT SELECTION ____________________________________
RCA TO-220AB
Triaes VERSAWATT
IT(RMS} 6A lOA 6A 8A lOA 12A 12A 12A
ITSM(60 Hz) 80A 120A 80A 100A 110A 115A 120A 120A
VDROM(V} 50
100
200 SC1418 SC146B BTA22B BTA23B 2N6342A 2N6346A
1!.,
.:I 300 BTA20C BTA21C BTA22C BTA23C
c
a
II)
400 SC141D SC146D BTA20D BTA21D BTA22D BTA23D 2N6343A 2N6347A
500 SC141E SC146E BTA20E BTA21E BTA22E BTA23E
600 SC141M SC146M BTA22M BTA23M 2N6344A 2N6348A
IGT(mA} 1+,111- 50 50 80 35 25 25 50 50
1-,111+
50 • 50·, - - 60 60 - 75
VGT(V) All Modes 2.5 2.5 4 2.5 2.5 2.5 2 2.5
RCA Press-Fit Isolated TO-220AB

Stud
Triaes (TO-203AA) Stud VERSAWATT
IT(RMS} lOA 15A 10 15 lOA 15A 15A 15A

ITSM(60 Hz} 100A 100A 100A 100A 100A 100A. 150A 150A
VDROMIVJ 50 T4101F T4100F T4111F T4110F T4121F T4120F
100
..
1!
.:I
c
200
300
2N5567 2N5571 2N5569 2N5573 T4121B T4120B
T4121D T4120D MAC15-6
MACl5-4 MAC15A-4
MAC15A-6
a
II)
400 2N5568 2N5572 2N5570 2N5574 T4121E T4120E
500 T4101E T4100E T4111E T4110E T4121M T4120M MACl5-8 MAC15A-8
600 T4101M T4100M T4111M T4110M
IGT(mA} 1+,111- 25 50 25 50 25 50 50 50
1-,111+ 40 80 40 80 40 80 - 75
VGT(V} All Modes 2.5 2.5 2.5 2.5 2.5 2.5 2 2.5
g, VDROM(V} 200 T4106B T4117B T4116B T41268
~il
0 ..
400 T4106D T4117D T4116D T4126D
>.- 600 T4106M T4126M
S!~ IGT(mA} 1+,111+ 45 45 45 45
~ VGT(V} All Modes 1.5 1.5 1.5 1.5
IT(RMS} 6A lOA 15A
c VDROM(V} 200 T4115B T4114B T41138
NO
:1:.0= 400 T4115D T4114D T4113D
of!
Q8. IGT(mA} 1+,111- 50 50 50
.... 0 1-,111+ 80 80 80
VGT(V} All Modes 2.5 2.5 2.5
28 ____________ ~ ____ ~ _______________________________________

- - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ _ _ GUIDE TO PRODUCT SELECTION
RCA TO-220AB TO-238AA

Triacs VERSAWATT Quick-Connect Press-Fit Stud Isolated Stud
IT(RMS) 16A 16A 25A 25A 30A 30A 30A 40A 30A 40A
VDROM(V) 50 T6000F T6001F T6401F T6411F T6421F T6420F
100
"E 200 T6000B T6001B T6260B T6261B T6401B 2N5441 T6411B 2N5444 T6421B T6420B
-c
c '" 300 T6000C T6001C T6260C T6261C
....'"
<I)
400 T6000D T6001D T6260D T6261D T6401D 2N5442 T6411D 2N5445 T6421D T6420D
500 T6000E T6001E T6260E T6261E T6401E T6411E T6421E T6420E
600 T6000M T6001M T6260M T6261M T6401M 2N5443 T6411M 2N5446 T6421M T6420M
IGT(rnA) 1+,111- 50 80 50 80 50 50 50 50 50 50
1-,111+ 80 - 80 - BO 80 BO 80 80 80
VGT(V) All Modes 2.5 3 2.5 3 2.5 2.5 2.5 2.5 2.5 2.5
VDROM(V) 200 T6006B T6407B T6406B T6417B T64168 T6427B T6426B
Q) 300 T6006C
C>
'"
~a
400 T6006D T6407D T6406D T6417D T6416D T6427D T6426D
>.- 500 T6006E
o :s:
.. <I) 600 T6006M T6407M T6406M T6417M T6416M T6427M T6426M
Q)
N IGT(rnA) I+, 111+ 45 45 45 45 45 45 45
VGT(V) All Modes 1.5 1.5 1.5 1.5 1.5 1.5 1.5
IT(RMS) 25A 40A 25A 25A 40A
VDROM(V) 200 T6405B T6404B T6415B 2N5806 T6414B
c 400 T6405D T6404D T6415D 2N5807 T6414D
N 0
:I: .0:: 500 2N5808
o
o f
Q) 600 2N5809
0::1" Co
0 IGT(rnA) 1+. III" 80 80 80 80 80
1-,111+ 120 120 120 150· 120
VGT(V) All Modes 3 3 3 2.5" 3
"4V for 111+ mode ·SO rnA for 1- mode
- - - - - - - - -________________________________________________ 29
GUIDE TO PRODUCT SELECTION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
seR· Product Matrix

RCA TO·202AB TO·220AB
SCR's TO·S VERSATAB VERSAWATT TO·213MA/TO·66
FTO' FTO' FTO' FTO'

IT(RMS) 2A 3A 4A 4A 4A 4A SA SA SA SA
ITSM(60 Hz) 60A 20A 20A 3SA 3SA 3SA 60A SOA SOA 7SA (Ipm)
VOROM 15 S20600 S2061 0 820620
30 82060Y S2061Y 82062Y
SO 83060F Cl06F 82060F S2061F 82062F
100 S3060A Cl06A 82060A S2061A· S2062A
200 2N3S28 830608 Cl068 S20608 820618 820628 2N322S 837008
300 82060C S2061C 82062C
400 2N3S29 830600 Cl060 S20600 S2061 0 820620 2N3S25 837000
SOO Cl06E 82060E S2061E 82062E S3706E
600 2N4102 83060M Cl06M S2060M 82061M 82062M 2N4101 S3705M 83700M 83701M
IGT(mA) 15 2 0.2 0.2 0.5 2 15 30 40 35
VGT(V) 2 1.5 O.S O.S 0.8 0.8 2 4 3.S 4
Low·Pro- rrO·205MA/
TO·213MA/ file Mod. TO·205MA/ TO·5With
RCA TO·66 With T0-220AB TO·205MA/ TO·5With Heat
SCR's TO·213MA/TO·66 Heat Rad. VERSAWATT TO·5 Heat Rad. Spreader
FTO' FTO' FTO'
IT(RM8) SA SA SA SA 7A 3.3A 7A
IT8M(60 Hz) BOA 80A SOA 80A 100A l00A 100A
VOROM 100
VRROM(V) 200 S27108 S5B008 S26008 826108 826208
300 85800C
400 827100 85BOOO 826000 826100 826200
500 85800E
600 82710M 85800M 82600M 82610M 82620M
700 837028
750 83703SF
IGT(mA) 45 40 15 50 15 15 15
VGT(V) 4 4 2 2.5 1.5 1.5 1.5
RCA TO·220AB TO·204MA/ Press·Fit

SCR's VERSAWATT TO·3 TO·203AA Stud
ITIRM8) 8A lOA lOA 12A 16A 12.5A 20A 35A 20A 3SA
IT8M(60 Hz) 100A 100A 120A 125 160 200A 200A 350A 200A 350A
VOROM 25 S4060U
VRROM(V) SO C122F 82800F S4060F 2N6394 2N6400
100 C122A 82800A S4060A 2N639S 2N6401 2N3668 86200A 2N3870 86210A 2N3896
150
200 C1228 82S008 S40608 2N6396 2N6402 2N3669 862008 2N3871 862108 2N3897
300 C122C S2S00C S4060C
400 C1220 828000 S40600 2N6397 2N6403 2N3670 862000 2N3872 862100 2N3898
500 C122E S2800E S4060E
600 C122M 82800M S4060M 2N6398 2N6406 2N4103 S6200M 2N3S73 S6210M 2N3899
700 S2800S S4060S
800 S4060N
IGT(mAI 25 15 0.2 30 30 40 lS 40 15 40
VGT(V) 1.5 1.S 1.5 1.5 1.5 2 2 2 2 2
*FTO - Fast Turn·Off.
30 _______________________________________________________________________
SCR Product Matrix
RCA Isolated
SCR's Stud TO-208MAfTO-48
Pulse
Modulator FTO' FTO' FTO'
IT(RMS) 20A 35A 25A 35A 35A 35A 40A"
ITSM(60 Hz) 200A 350A 150A 150A 180A 180A 400A
VOROM 25 2N681
VRROM(V) 50 2N682 2N3654
100 S6220A S6420A 2N683 2N3650 2N3655
150 2N684
200 S62208 S64208 2N685 2N3651 2N3656 S73108
250 2N686
300 2N687 2N3652 2N3657 S7310C
400 S62200 S64200 2N688 2N3653 2N3658 S73100
500 2N689 S7310E
600 S6220M S6420M 2N690 S6493M S7410M S7412M S7310M
800 S7310N
IGT(mA) 15 40 25 80 180 180 80
VGT(V) 2 2 3 2 3 2 3
"FTO - Fast Turn-Off • ASCR (Asymmetrical Silicon Controlled Rectifiers)
ITR Product Matrix

For Horizontal-Deflection Circuits
RCA TO-220AB
ITR's* VERSAWATT
Commutating
Trace (Retrace)
IT(RMS) SA 8A
ITSM(60 Hz) 90A 90A
VOROM(V) 300
400
450
500 S3900E
550
600 S3901 M
650 S3900MF S3901MF
700 S3900S S3901S
750 S3900SF
IGT(mA) 30 45
VGT(V) 4 4
"Integrated Thyristor IRectifiers
______________________________________________________ 31
GUIDE TO PRODUCT SELECTION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
Packages
H·1380
2N6032 2N6033
JEDEC TO-3! Modified TO-3 JEDEC TO-5! TO-39!TO-S
TO-204MA (O.060-ln.Dla.Plns) TO-20SMA With Heat Radiator
H-1375 H-1599
TO-39!T0-5 TO~S TO-S

With Flange With Heat Spreader Low-Profile JEDEC TO-S
H-1381 H-1612 H-1896 H-1340
JEDEC TO-39! JEDEC TO-4S! JEDEC TO-61! JEDEC TO.-66!

TO-20SMD TO-20SMA TO-211MA TO-213MA
H-1824 H-1611 H-1534R1
Press-Fit
TO-66 VERSATAB JEDEC VERSAWATT
With Heat Radiator JEDEC TO-202AB TO-203AA JEDEC TO-220AA
32 __________________----------------------------------_______________
- - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GUIDE TO PRODUCT SELECTION
Packages
~ Q- <.•. : •.. •. . . .•
.--=-
H-1535R1 H-1354 H-1612
VERSAWATT Quick Connect

JEDEC TO-22DAB JEDEC TO-238 Radial Stud
H-1613 H-16DD H-16D1 H-16D2
Isolated Stud
6-20 A Thyristors Stud Isolated Stud
35 A SCR's Press-Fit 25-40 A Triacs 25-40 A Trlacs
Power Hybrid
Circuit
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - -___________________________________ 33
Power Devices Cross-Reference Guide
(Industry Type to Equivalent RCA Type)
This guide provides a quick reference to more than 2800 industry power devices (power transistors, silicon
controlled rectifiers, and triaes) and iheir nearest RCA replacements. The nearest RCA device Is determined on the
basic of electrical Similarity as well as package similarity. •
RCA RCA RCA

Industry Replacement Industry Replacement Indusiry Replacement
Type Type Type Type Type Type
2N656 2N2102 2N3110 2N3053 2N3766 2N3879,2N6373

2Nl132 2N4037 2N3114 BF257 2N3767 2N6372
2Nl132A 2N4037 2N3122 2N5321 2N3774 2N5783
2N1420 2N1711 2N3133 RCA1A05 2N3775 2N5781
2N1507 2N1711 2N3134 2N4037 2N3778 2N5783
2N1565 RCA1A01 2N3171 2N6254 2N3.779 2N5781
2N1565A RCA1A01 2N3172 2N6246 2N3782 2N5783
2N1573 40409 2N3173 2N6247 2N3788 2N5840
2N1574 40409 2N3174 2N6248 2N3789 2N3791
2N1613S 2N1613 2N3183 2N6246 2N3790 2N3792
2N1711S 2N1711 2N3184 2N6246 2N3795 2N5415
12N1714 2N1480 2N3185 2N6247 2N3863 2N3055
2N1889 2N699 2N3186 2N6248 2N3864 2N3442
2N1893S 2N1893 2N3195 2N6246 2N3865 2N6262
.2N1974 RCA1A01 2N3196 2N6246 2N3902 2N6308.BUX18C
2N1975 RCA1A01 2N3197 2N6247 2N3945 2N2102,2N2270
2N1984 RCA1A01 2N3198 2N6248 2N4000 2N5320
2N1985 RCA1A01 2N3202 2N5783 2N4030 2N4036
2N1986 2N3053. 2N3203 2N5781 2N4070 2N6306
2N1987 2N697 2N3208 2N5783 2N4071 2N6306
2N1990 BF257 2N3224 2N5415 2N4111 2N4914
2N2034 2N5784 2N3225 2N5415 2N4113 2N4915
2N2049 2N1711 2N3226 2N6253 2N4130 2N3055
2N2102S 2N2102 2N3233 2N3442 2N4231 2N4231A
2N2192 2N1711 2N3234 2N3055.2N6262 2N4232 2N4232A
2N2193 2N1613 2N3235 2N3055 2N4233 2N4233A
2N2194 2N699 2N3236 2N6254 2N4234 2N5783
2N2195 2N697 2N3237 2N5302 2N4235 2N5782
2N2195A 2N697 2N3238 2N5882 2N4236 2N5781
2N2217 2N697 2N3239 2N5882 2N4237 2N5786
2N2218 2N697 2N3240 2N5882 2N4238 2N5785
2N2243 2N1893 2N3244 2N5323 2N4239 2N5784
2N2243A 2N1893 2N3245 2N5323 2N4387 2N5956
2N2270S 2N2270 2N3292 2N697 2N4388 2N5955
2N2297 2N1613 2N3300 2N1711 2N4404 2N1893
2N2297S 2N1613 2N3418 2N5320 2N4405 2N2405
2N2303 40315 2N3444 2N5321 2N4438 2N3439
2N2410 2N3053 2N3445 2N6471 2N4890 2N4037
2N2537 RCA1A06 2N3446 2N6472 2N4907 2N6246
2N2538 2N1711 2N3447 2N6471 2N4908 2N6246
2N2800 40406 2N3448 2N6472 2N4909 2N6247
2N2846 2N697 2N3464 2N3053 2N4910 2N6260,2N6374
2N2848 2N697 2N3665 2N1893 2N~911 2N3054,2N6373
'2N2863 2N5321 2N3672 2N699 2N4912 2N6261,.2N6372
2N2864 2N3053 2N3712 2N3440,BF257 2N4926 2N3440,BF258
2N2868 2N3053 2N3713 2N3715 2N4927 2N3440.BF258
2N2958 2N697 2N3714 2N3716 2N4928 BFT28
2N2959 2N1711 2N3719 2N5323 2N4929 BFT28A
2N3020 2N1893 2N3720 2N5322 2N4930 2N5415,BFT28B
2N3024 2N4904 2N3738 2N3584 2N4931 2N5416,BFT28C
2N3025 2N4905 2N3739 2N3585 2N5058 2N3439,BF259
2N3026 2N4905 2N3740 2N5955 2N5059 2N3440,BF258
2N3036 2N5320 2N3741 2N5954 2N5091 2N5416
2N316s 2N2102 2N3742 2N3439,BF259 2N5092 2N3439
2N3109 2N1711 2N3743 2N5416,BFT19B 2N5110 2N5783
34
RCA RCA RCA

Industry Replacement Industry Replacement Industry Replacement
2N5157 2N5840 2N5979 2N6488 2N6424 2~6211

2N5241 2N6513,BUX18C 2N5980 2N6489 2N6425 2N6212
2N5264 2N6510 2N5981 2N6490 2N6461 2N3439
2N5279 2N3439 2N5982 2N6491 2N6543 2N6673
2N5280 2N4036 2N5983 2N6486 2N6545 2N6673
2N5281 2N5415 2N5984 2N6487 2N6563 2N6689
2N5282 2N5416 2N5985 2N6488 2N6585 2N6692
2N5294 2N5294 2N5986 2N6489 2N6586 2N6690
2N5296 2N5298 2N5987 2N6490 2N6588 2N6692
2N5298 2N5298 2N5988 2N6491 2N6589 2N6690
2N5305 BDY29 2N5989 2N6486 2SA489 2N6107
2N5344 2N6211 2N5990 2N6487 2SA490 2N6109
2N5345 2N6212 2N5991 2N6488 2SA503 2N4314
2N5427 2N6372 2N6029 RCA9116E 2SA504 2N4037
2N5429 2N6465 2N6030 RCA9116D 2SA512 2N4314
2N5466 2N6671 2N6031 2N6609 2SA560 2N4314
2N5467 2N6671 2N6054 2N6650 2SA597 2N4037
2N5598 2N5202 2N6139 2N5569 2SA814 2N6476
2N5600 2N6500 2N6140 2N5570 2SA815 2N6475
2N5602 2N3879 2N6141 T4111M 2SB502A 2N5954
2N5604 2N6500 2N6142 2N5569 2SB503A 2N5955
2N5606 2N3879 2N6143 2N5570 2SB530 2N6248
2N5608 2N3879 2N6144 T4111M 2SB531 2N6247
2N5610 2N6500 2N6145 T4120B 2SB558 2N6248
2N5612 2N6500 2N6146 T4120D 2SB595 2N6475
2N5614 2N5039 2N6147 T4120M 2SB596 2N6107
2N5616 2N5038 2N6151 T2800B 28(;481 2N699
2N5618 2N5038 2N6152 T2800D 2SC482 2N1613
2N5620 2N6496 2N6153 T2800M 2SC485 2N1893
2N5622 2N5039 2N6154 T2802B 2SC504 2N1711
2N5624 2N5038 2N6155 T2802D 2SC512 2N699
2N5626 2N5038 2N6156 T2802M 2SC558 BUX17A
2N5628 2N6496 2N6157 T6401B 2SC560 2N2405
2N5660 2N6077 2N6158 T6401 D 2SC779 2N3584
2N5661 2N6079 2N6159 T6401M 2SC782 2N3585
2N5664 2N6077 2N6160 T6411B 2SC782A 2N3585
2N5665 2N6079 2N6161 T6411D 2SC783 2N3583
2N5687 40412 2N6162 T6111M 2SC789 2N6292
2N5732 2N5671 2N6163 T6421B 2SC790 2N6290
2N5734 2N5671 2N6164 T6421D 2SC792 BUX16B
2N5737 2N6246 2N6165 T6421M 2SCI173 2N6288
2N5738 2N6248 2N6226 2N6248 2SC1195 BUX1S
2N5739 2N5878 2N6229 RCA9116E 2SC1576 BUX16
2N5758 2N3442,2N6262 2N6230 RCA9116D 2SD102 2N6261
2N5759 2N3442,2N6262 2N6231 MJ15004 2SD129 2N6372
2N5760 2N3442,2N6262 2N6233 2N3583,2N6077 2SD130 2N3054
2N5861 2N5321 2N6234 2N3584,2N6077 2SD234 RCA3054
2N5864 RCA1A05 2N6235 2N3585,2N6079 2SD235 RCA3054
2N5865 RCA1A05 2N6270 2N5671 2SD369 2N3055
2N5867 2N6246 2N6271 2N5672 2SD371 2N6254
2N5888 2N6247 2N6296 2N6649 2SD404C 2N6288
2N5929 2N5671 2N6297 2N6650 2SD424 2N6262
2N5930 2N5672 2N6298 2N6649 2SD425 2N3442
2N5932 2N56il 2N6299 2N6650 2SD427 2N4347
2N5933 2N5672 2N6302 RCA3773 2SD428 2N4348
2N5935 2N6032 2N6338 2N5672 2SD523 2N6384
2N5936 2N6033 2N6339 2N5672 2SD524 2N6385
2N5970 2N6472 2N6342 T2802B,2N6342A 2SD526 2N6292
2Ns971 2N6472 2N6343 T2802D,2N6343A 2SD552 BUX17A
2N5972 2N6472 2N6344 T2802M,2N6344A 6T06 T2700B
2N5974 2N6489 2N6346 T2800B,2N6346A 6T08 T4700B
2N5975 2N6490 2N6347 T2800D,2N6347 A 61'16 T27008
2Nli91'§ 21'!6491 2N6348 T2800M,2N6348A 6T18 T4700B
2N5977 2N6486 2N6359 2N4348 6T26 T2700B
2N5978 2N6487 2N6360 2N4348 6T28 T4700B
35

(lridustry Type to Equivalent RCA Type)
RCA RCA RCA
6T36 T2700D 40575 T4700B 40753 56210A

6T38 T4700D 40576 T4700D 40754 56210B
6T46 T2700D 40594 RCA1A03 40755 56210D
6T48 T4700D 40595 RCA1A04 40756 56210M
10RC10A524 2N3650 40634 RcA1AOs 40757 56220A
10RC20A524 2N3650 40635 RCA1A06 40758 56220B
10RC30A524 2N3651 40636 RCA1B01 40759 56220D
10RC40A524 2N3652 40654 52600B 40760 56220M
10RCSOA524 57410M 40655 52600D 40761 T2311B
10RCSOA524 57410M 40656 82620B 40762 T2311D
16RC10A 2N683 40657 52620D 40766 T2301A
16RC10A524 2N3650 40658 52610B 40767 T2311A
16RC20A 2N685 40659 52610D 40769 T2304B
16RC20A524 2N3651 40660 T6401B 40770 T2304D
16RC30A 2N687 40661 1'64010 40771 T2305B
16RC30A524 2N3652 40662 T6411B 40772 T2305D
16RC40A 2N688 40663 T6411D 40777 T4115B
16RC40A524 2N3653 40668 T2800B 40778 T4115D
16RCSOA 2N689 40669 T2800D 40781 f4114B
16RC50A524 57410M 40670 T2800M 40782 T4114D
16RC60A 2N690 40671 T6401M 40765 T4113B
16RCSOA524 57410M 40672 T6411M 40786 T4113D
73T2 40392 40684 T2313A 40787 T6405B
100T2 2N4347 40685 T2313B 40786 T6405D
104T2 2N6253 40686 T2313D 40789 T6415B
108T2 2N5039 40687 T2313M 40790 T6415D
109T2 2N6354 40688 ·T6420B 40791 T6404D
182T2A BUX16 40689 T6420D 40793 T6414B
182T2B BUX16 40690 T6420M 40794 T6414D
182T2C BUX16 40691 T2301B 40795 T4101M
183T2A BUX16 40692 T2301D 40796 T4111 M
183T2B BUX16 40693 T2316A 40797 T4100M
183T2C BUX16 40694 T2316B 40798 T4110M
184T2A BUX16 40695 T2316D 40799 T4121B
184T2B BUX16 40696 T2306A 40800 T4121D
184T2C BUX16 40697 T2306B 40801 T4121M
185T2A BUX16A 40698 T2306D 40802 T4120B
185T2B BUX16A 40699 T6406B 40803 T4120D
185T2C BUX16A 40700 T6406D 40804 T4120M
40216 56493M 40701 T6406M 40805 T6421B
40250 2N3054 40702 T6416B 40806 T6421 D
40251 2N3055 40703 T6416D 40807 T6421M
40360 RCA1AOl 40704 T6416M 40833 52600M
40429 T2700B 40705 T6407M 40834 52620M
40430 T2700D 40706 T6407D 40835 52610M
40502 T2710B 40709 T6407M 40867 52800A
40503 T2710D 40711 T4106B 40868 52800B
40504 52710B 40712 T4106D 40869 52800D
40505 52710D 40713 T4116B 40671 RCA1C03
40506 S2710M 40714 T4116D 40672 RCA1C04
40525 T2300A 40715 T4706B 40900 T2850A
40526 T2300B 40716 T4706D 40901 T2850B
40527 T2300D 40719 T4117B 40902 T2850D
40528 T2302A . 40720 T4117D 40927 T6420N
40529 T2302B 40721 T2806B 40979 RCA1Cl0
40530 T2302D 40722 T2806D 40980 RCA1Cll
40531 T2310A 40727 T2706B 41014 T2500B
40532 T2310B 40728 T2706D 41015 T2500D
40533 T2310D 40729 T2716B BCl19 2N697
40534 T2312A 40730 T2716D BC120 2N697
40535 T2312B 40735 57410M BC139 40406
40536 T2312D 40749 56200M BC140 2N5321
40553 53700B 40750 S6200B BC141 2N5320
40554 53700D 40751 S6200D BC142 RCA1AOl
40555 S3700M 40752 56200M BCl43 RCA1A04
36

RCA RCA RCA

BC144 RCA1A03 B0197 B0243A B0315 2N6472

BC160 2N5323 B0198 B0244A B0316 2N6247
BC161 2N5322 B0199 B0243B B0317 2N6472
BC185 2N3053 B0200 B0244B B0318 2N6248
BC286 2N2102 B0201 B0243 B0342 2N6569
BC287 2N4036 B0202 B0244 B0343 2N6594
BC300 2N1893 B0203 B0243A B0350A BOX18
BC301 2N699 B0204 B0244A B0351A 2N3055
BC302 2N2270 B0205 2N6486 B0401 BUW64A
BC303 2N4314 B0206 2N6489 B0403 BUW64B
BC304 2N4037 B0207 2N6487 B0539 B0241
BC310 2N1893 B0208 2N6490 B0539A B0241A
BC311 2N4314 B0213-45 2N6486 B0539B B0241B
BC323 2N5320 B0213-60 2N6487 B0539C B0241C
BC324 2N5320 B0213-80 2N6488 B0540 B0242
BC340 2N3053 B0214-45 2N6489 B0540A B0242A
BC341 2N3053A B0214-60 2N6490 B0540B B0242B
BC342 2N2102 B0214-80 2N6491 B0540C B0242C
BC343 2N4036 B0215 2N3584 B0543 2N6486
BC344 2N2405 B0216 2N3585 B0543A 2N6487
BC345 2N4036 B0244A B0244A B0543B 2N6488
BC360 40319 B0244B B0244B B0544 2N6489
BC361 2N4036 B0244C B0244C B0544A 2N6490
BC441 2N5320 B0245 2N6486 B0544B 2N6491
BC460 2N5323 B0245A 2N6487 B0545 2N6486
BC461 2N5322 B0245B 2N6488 B0545A 2N6487
BCW44 RCA1A01 B0246 2N6489 B0545B 2N6488
BCW45 40362 B0246A 2N6490 B0546 2N6489
BCW77-16 2N1711 B0246B 2N6491 B0546A 2N6490
BCW78-16 2N1711 B0253 BUX31 B0546B 2N6491
BCW79-16 2N4037 B0253A BUX31 B0566 2N6667
BCW80-16 2N4037 B0253B BUX31 B0566A 2N6668
BCY40 2N4037 B0253C BUX31A B0567 2N6387
BCY54 2N4036 B0260 2N3584 B0567A 2N6388
B0115 BF258 B0261 2N3584 B0575 B0241
B0116 2N3055 B0264 2N6667 B0576 B0242
B0141 2N4347 B0264A 2N6668 B0577 B0241A
B0144 BUX18C B0264B BOX34C B0578 B0242A
B0148 BOY71 B0265 2N6387 B0579 B0241 B
B0149 BOY71 B0265A 2N6388 B0580 B0242B
B0160 2N6510 B0265B BOX33C B0581 B0241C
B0162 40250 B0266 BOX34A B0582 B0242C
B0163 2N6260 B0266A BOX34B B0585 B0241
B0165 B0239 B0266B BOX34C B0586 B0242
B0166 B0240 B0267 BOX33A B0587 B0241A
B0167 B0239A B0267A BOX33B B0588 B0242A
B0168 B0240A B0267B BOX33C B0589 B0241 B
B0169 B0239B B0268 BOX34A B0590 B0242B
B0170 B0240B B0268A BOX34B B0591 B0241C
B0175 B0239 B0269 BOX33A B0592 B0242C
80176 B0240 B0269A BOX33B B0595 B0243
80177 B0239A B0271 B0241 B0596 B0244
80178 B0240A B0272 B0242 B0597 B0243A
B0179 B0239B B0273 B0241A B0598 BD244A
B0180 B0240B B0274 B0242A B0599 B0243B
B0185 B0239 B0275 B0241B B0600 B0244B
B0186 B0240 B0276 B0242B B0601 B0243C
B0187 B0239 B0301 B0243 B0602 B0244C
B0188 B0240 B0302 B0244 B0605 2N6486
B0189 B0239A B0303 B0243A B0606 2N6489
B0190 B0240A B0304 B0244A B0607 2N6487
B0191 2N3054 B0311 2N6471 B0608 2N6490
B0192 2N6260 B0312 2N6246 B06W 2N6488
B0195 B0243 B0313 2N6472 B0610 2N6491
B0196 B0244 B0314 2N6247 B0633 RCA1C10
37

RCA RCA RcA

Industry Replacemenl Industry Replacement Industry Replacement
BDY27C BUX16 BFR58 BF258 BRY41-400 2N5757

BDY28A BUX16A BFR59 BF259 BRY41-500 2N5757
BDY28B BUX16A BFi=!77 2N1893 BRY45-100 2N5754
BI!lY28C BUX16A BFR78 2N2405 BRY45-200 2N5755
BDY34 BD241 BFS91A 2N4036 BRY45-300 2N5756
BDY38 2N6253 BFS92 2N4036 BRY45-400 2N5757
BDY39 2N3055 BFS93 2N4314 BRY45-500 2N5757
BDY42 BUX18A BFS94 2N4037 BSS15 2N5320
BDY43 BUX18B BFS95 2N4037 BSS16 2N5321
BDY44 BUX18C BFT32 RCA1A06 BSS17 2N5322
BDY45 BUX17A BFT33 40409 BSS18 2N5323
BDY46 BUX17B BFT34 2N2405 BSS30 2N2102
BDY55 BDY55 BFT35 2N4314 BSS32 2N2405
BDY55 2N5039 BFT36 40410 BSS45 2N5320
BDY56 2N5038 BFT39 40409 BSS46 2N5322
BDY56 BDY56 BFT40 40628 BSS48 2N3440
BDY57 BDY57A BFT41 40628 BSS49 2N3439
BDY57 41012 BFT44 BF259 BSV15 2N4037
BDY58 BDY58R BFT45 BF258 BSV15-6 2N4037
BDY58 41013 BFT60 2N4037 BSV15-10 2N4037
BDY73 2N3055 BFT61 2N4037 BSV16 2N4314
BDY74 2N4347 BFW24 2N2102 BSV16-6 2N4314
BDY76 2N3772 BFW25 2N1711 BSV16-10 2N4314
BDY77 2N3773 BFW26 2N697 BSV17 2N5322
BDY78 2N6373 BFW33 2N1893 BSV69 2N5321
BDY79 2N3583 BFW44 BFT19 BSV77 2N5321
BDY80A 2N5296 BFW45 BF257 BSV84 2N1893
BDY81A 2N5298 BFX17 2N3053 BSW23 2N4037
BDY82A 2N6111 BFX29 2N4036 BSW39 2N1893
BDY83A 2N6109 BFX30 2N4036 BSX22 2N5321
BDY91 2N5038 BFX39 2N4036 BSX23 2N5320
BDY92 2N5039 BFX68 2N1711 BSX40 2N4037
BDY93 BU126 BFX68A 2N1711 BSX45 2N3053
BDY94 BU126 BFX69 2N697 BSX46 2N2102
BDY95 BU126 BFX69A 2N1613 BSX47 2N1893
BDY96 2N6513 BFX74 2N4037 BSX59 2N5321
BDY97 2N6512 BFX74A 2N4314 BSX60 2N5321
BDY98 2N6511 BFX85 2N2405 BSX61 2N5321
BDY99 2N6511 BFX86 2N1711 BSX72 2N3053
BF111 2N3440 BFX87 2N4038 BSX95 2N1613
BF137 BF257 BFX88 2N4037 BSX96 2N1711
BF157 BF257 BFX91 BFT28B BSY25 2N697
BF174 BF257 BFX98 BF257 BSY44 2N699
BF177 40360 BFY17 40317 BSY45 2N1893
BF178 40412 BFY33 2N697 BSY46 2N699
BF179 BF257 BFY34 2N697 BSY51 2N697
BF179A BF257 BFY40 40320 BSY52 2N1711
BF179B BF258 BFY43 BF257 BSY53 2N697
BF179C BF258 BFY44 2N2102 BSY54 2N1711
BF305 BF257 BFY45 40408 BSY55 2N1893
BF322 40317 BFY46 2N1711 BSY68 2N2405
BF323 40319 BFY50 2N697 BSY71 2N1711
BF336 BF258 BFY51 2N697 BSY81 2N697
BF337 BF258 BFY52 2N3053 BSY82 2N1711
BF338 BF258 BFY55 2N697 BSY83 2N697
BF355 2N3440 BFY56 2N699 BSY84 2N1711
BF390 BF259 BFY57 BF257 BSY85 2N1893
BFR19 . 2N1613 BFY67 2N3053 BSY87 2N2102
BFR20 2N1711 BFY67A 2N1613 BSY91 2N697
BFR21 2N1893 BFY68 2N1711 BSY92 2N1711
BFR22 2N2102 BFY70 2N3053 BT102-300R S2800C
BFR23 2N4036 BFY94 RCA1A03 BT102-500R S2800E
BFR24 2N4037 BRY41-100 2N5754 BT137-500 T2800E
BFR56 2N5321 BRY41-200 2N5755 BT137-600 T2800M
. BFR57 BF257 BRY41-300 2N5756 BT138-500 2N6348A
39
POWE., Devices Cross-Reference. Guide

RCA RCA RCA

Industry Replileement Industry Replacement Industry Replacement
BT138-6OO 2N6348A BTUQ§50 T4ll0M BTW3l-3oo 2N365T

BT139-5oo MAC15A8 BTU0560 T4ll0M BTW3l·4oo 2N3658
BT139-6oo MAC15A8 BTU0605 T64llB BTW3l-400 2N3658
BTR0205 T2700B BTU06l0 T64llB BTW3l-5oo S7412M
BTR02l0 T2700B BTU0620 T64llB BTW31-600 S7412M
BTR0220 T2700B BTU0630 T64l10 BTX0505 T4120B
BTR0230 T27000 BTU0640 T64110 BTX0510 T4120B
BTR0240 T27000 BTU0650 T6411M eTX0520 T4fioB
BTR0305 T2700B BTU0660 T6411M BTX0530 T41200
BTR0310 T2700B BTV0405 T4l21B BtX0540 T41200
BTR0320 T2700B BTV0410 T4121B BTX0550 T4120M
STR0330 T27oo0 BTV0420 T4121B BTX0560 T4120M
BTR0340 T2700D BTV0430 T4l21D STX0605 T6421B
BTR0405 T4700B BTV0440 T4l21 0 BTX0610 T6421B
BTR04l0 T4700B BTV0450 T4l21M' BTX0620 T6421B
BTR0420 T4700B BTV0460 T4121M BTX0630 T6421 0
BTR0430 T4700D BTW10-foo T2700B BTX0640 T6421 0
BTR0440 T4700D BTW10-2oo T2700B BTX0650 T6421iv1
BTS0305 2N5567 BTW10-3oo T27000 BTX0660 T6421M
BTS0310 2N5567 BTW10-4oo T27000 BTX31-100 S7310A
BTS0320 2N5567 BTW11-1oo T2700B BTX31-200 S7310B
BTS0330 2N5568 BTW11-2oo T2700B BTX31-400 S73100
BTS0340 2N5568 BTW11-300 T2700D BTX31-500 S7310M
BTS0350 T4101M BTW11-4QO T2700D BTX31-600 S7310M
BTS0360 T4101M ElTW12-1oo 2N5567 BTX32-100 87310B
BTS0405 2N5567 BTW12-2oo 2N5567 BTX32-400 S7310D
BTS0410 2;"'5567 BTW12-3oo 2N5568 _BIX32-500 S7310M
BTS0420 2N5567 BTW12-4oo 2N5568 BTX32-600 S7310M
BTS0430 2N5568 BTW12-5oo T4101M BTX33-100 S6210A
BTS0440 2N5568 ElTW13-1oo 2N5569 BTX33-200 S6210B
BTS0450 T4101M BTW13-2oo 2N5569 BTX33-400 S6210D
BTS0460 T410Hvl BTW13-3oo 2N5570 BTX33-500 S6210M
BTS0510 2N5571 BTW13-5oo T4111M BTX70-100 S6210A
BTS0520 2N5571 BTW14-1oo T4700B BTX70-200 S6210B
BTS0530 2N5572 BTW14-2oo T4700B BTX70-400 S62100
BTS0540 2N5572 BTW14-3oo T4700D BTX70-500 S6210M
BTS0550 T4100M BTW14-4oo T4700D STX70-600 S6210M
BTS0560 T4100M BTW15-100 2N5567 BTX71-100 S7310B
BTS0605 2N5441 !3TW15-2oo 2N5567 BTX71-200 S7310B
BTS0610 2N5441 BTW15-3oo 2N5568 BTX71-400 S7310D
BTS0630 2N5442 BTW15-5oo T4101M BTX71-600 S7310M
BtS0640 2N5442 BTW16-1oo 2N5569 BTX72-100 S7310M
BTS0660 2N5443 Bl)Yj§:3oo 2N5570 BTX72-400 S731 OM
BTU0305 2N5569 BTW16-400 2N5570 BTX72-500 S7310M
BTU0310 2N5569 BTW.16-5oo t4111M BTX72-600 S7310M
BTU0320 2N5569 BTW18-1oo 2N5571 BTX73-100 211i683
BTU0330 2N5570 BTW18-2oo 2N6571 BTX73-200 2N685
BTU0340 2N5570 BTW18-3oo 2N5572 BTX73-400 2N688
BTU0350 T4111M BTW18-4oo 2N5572 BTX73-500 2N689
BTU0360 T4111M BTW18-5oo T4101M BTX73-600 2N690
BTU0405 2N5569 BTW19-1oo 2N5571 BTX74-100 S6210A
BTU0410 2N5569 BTW19-2oo . 2N5571 BTX74-200 S6210B
BTU0420 2N5569 BTW19-300 2N5572 BTX74-400 562100
BTU0430 2N5570 BTW19-400 2N5572 BTX74-500 S6210M
BTlJ0440. 2N5570 BTW19-500 T4101M BTX74-600 S62ioM
BTU0450 T4111M BTW20-100 T6411B BTX94-400 T6411D
BTU0460 T4111M BTW20-200 T6411B BTX94-500 T6411M
BTU0505 2N5573 BTW20-300 T6411 D BTX94-600 T6411M
BTU0510 2N5573 BTW20-400 T6411D BU102 BUX18B
BTU0520 2N5573 BTW20-500 T6411M BU104 2N6671
BTU0530 2N5574 BTW30-3oo 2N3657 BU1040P ReA6671
BTU0540 2N5574 BTW30-4oo 2N3658 BU109 2N6671
40

(Industry Type to EquivalenfRCA Type)
RCA RCA RCA

BU109DP RCA6671 BUX37 BUX37A C22U 86200A

BU111 2N6512 BUX39 BUX39 C30A 2N3896
BUl12 2N6672 BUX40 BUX40A C30B 2N3897
BUl14 2N6510 BUX41 BUX41 C30C 2N3898
BU116 2N6671 BUX41N BUX41N C30D 2N3898
BU121 BUX18 BUX42 BUX42 C30P 2N3896
BU129 BUX18C BUX43 BUX43 C30U 2N3896.
BU134 <:!N6672 BUX44 BUX44 C31A 2N3896
BU135 2N6510 BUX45 BUX45 C31B 2N3897
BU136 2N6510 BUX46 BUX31A C31C 2N3898
BU137 2N6754 BUX47A BUX32A C31D 2N3898
BU218 2N5039 BUX48A 2N6752 C31P 2N3896
BU222 2N6513 BUX63 2N6079 C31U 2N3896
BU222A 2N6513 BUX80 BUX32 C32A 2N3870
BU310 BUX17 BUX81 BUX32B C32B 2N3871
BU311 BUX17 BUX82 BUX31 C32C 2N3872
BU312 BUX17 BUX83 BUX31B C32D 2N3872
BU322 RCA8766E BUX97 BUX31 C32F 2N3870
BU322A RCA8766E BUX97A BUX31 C32U 2N3870
BU323 RCA8766D BUX97B BUX31f? C33A 2N3870
BU323A RCA8766D BUY188 2N6671 C33B 2N3871
SU406 RCA6671 BUY20 2N6671 C33C 2N3872
BU406H FfcA6671 BUY21 2N6671 C33D 2N3872
BU407 RCA6671 BUY21A 2N6671 C33F 2N3870
BU407H RCA6671 BUY22 2N6673 C33U 2N3870
BU408 RCA6671 BUY23 2N6673 C34A2 2N3650
eU409 RCA6671 BUY23A 2N6673 C34B2 2N3651
BU606 2N6671 BUY35 2N6511 C34C2 2N3652
BU607 2N6671 BUY43 BDY71 C34D2 2N3653
BU608 2N6671 BUY46 2N3054 C34E2 87410M
BU811 BUX31A BUY51A 2Nj'i039 C34F2 2N3650
BU811A BUX3-1B BUY52A 2N5671 C35A 2N683.2N3896
BU812 BUX32A BUY53A 2N5038 C35B 2N685.2N3897
BU812A BUX32B BUY54A 2N5672 C35C 2N687.2N3898
BUV10 2N5672 BUY55 2N5239 C35D 2N688.2N3898
BUV11N 2N6686 BUY56 2N5239 C35E 2N689.2N3899
BUV21 BUV21 BUY66 BU126 C35F 2N682.2N3896
BUV23 2N6677 BUY67 BU126 C35G 2N684.2N3897
BUV24 2N6678 BUY69A BUX31B C35H 2N686.2N3898
BUW24 2N6542 BUY69B BUX31 C35M 2N690.2N3899
BUW34 BUX32 BUY69C BUX31 C35U 2N681.2N3896
BUW35 SUX32 BUY70A BUX31B C38A 2N683
BUW36 BUX32A BUY70B BUX31 C38B 2N685
BUW44 2N6678 BUY70C BUX31 C38C 2N687
BUW57 2N5672 BUY72 2N5239 C38D 2N688
BUW58 2N6686 BUY74 BUX18A C38E 2N689
BUW66 HCAB766B BUY75 BUX18C C3BF 2N682
BUW67 RCA8766 BUY76 BU126 (;38<3 2N684
BUW73 2N6676 BUY77 BUX1BA C38M 2N686
BUW74 2N6674 BUY78 BUX1BC C3BU 2N6Bl
BUW75 2N6674 BUY79 BUX126 C40A 2N3650
BUW76 BUX32 BUY94 BUX31 C40B 2N3651
BUW77 BUX32 BUY95 BUX31 C40C 2N3652
BUX10 BUX10A BUY96 BUX31 C40D 2N3653
BUX11 BUX11 C20A 86210A C40E 87410M
BUX11N BUX11N C20B 86210B C40F 2N3650
BUX12 BUX12 C20C 86210C C40G 2N3654
BUX13 BUX13 C20D 86210D C40H 2N3652
BUX14 BUX14 C20F 86210A C40U 2N3650
BUX15 BUX15 C20U 86210A Cl06A Cl06A
BUX20 BUX20A C22A 86200A C106B Cl06B
BUX26 2N6510 C22B 86200B Cl06C Cl06C
BUX27 BUX18C C22C 86200C C106D Cl06D
BUX28 RCA8766A C22D 86200D Cl06E Cl06E
BUX29 RCAB766C C22F 86200A C106F Cl06F
41

(Indusfryiype to Equivalent ~CA Type)
RCA RCA RCA
C122A C122A CS20-6M S6200M 045C5 2N6109,B0240

C122B C122B CS20-6N S6210M 045C6 2N6109,B0240
C122C C122C CS35-02M 2N3870 045C7 2N6107,B0240A
C1220 C1220 CS35-02N 2N3896 045C8 2N6107,B0240A
C122E C122E CS35-05M 2N3870 045C9 2N6107,B0240A
C122F C122F CS35-05N 2N3896 045C10 2N6107,B0240B
C122M C122M 'CS35-1M 2N3870 045C11 2N6107,B0240B
C140A 2N3650 CS35-1N 2N3896 045C12 B0240B
C140B 2N3651 CS35-2M 2N3871 045E1 2N6666
C140C 2N3652 CS35-2N 2N3897 045E2 2N6667
C1400 2N3653 CS35-4M 2N3872 045E3 2N6668
C140F 2N3654 CS35-4N 2N3698 045H1 2~!i1l1
. C141A 2N3655 CS35-6M 2N3873 D4SH2 2N6111
C141B 2N3656 CS35-6N 2N3899 045H4 2N61 09
C141C 2N3657 042C1 2N6288 045H5 2N6109
C141D 2N3658 042C2 2N6288 045H7 2N61 07
C141F 2N3654 042C3 2N6288 045H8 2N6107
.C220A S6210A 042C4 2N6290 D45H10 2N61 07
C220A2 S6220A 042C5' 2N6290 0451-111 2N6107
C220B 56210B 042C6 2f'i6290 064VE3 2N6671
C220B2 S6220B 042C7 2N6292 064VE4 2N6672
C220C S6210C 042C8 2N6292 064VE5 2N6673
C220C2 56220C 042C9 2N6292 OTS410 RCA410
C2200 S62100 042C10 2N6292 OTS411 RCA411
C22002 S62200 042C11 2N6292 OTS413 RCA413
C220E S6210M 042C12 2N6292 OTS423 RCA423
C220E2 S6220M 043C1 2N6111 OTS431 RCA431
C220F S6210A 043C2 2N6111 EC106Al Cl06A
C220F2 S6220A 043C3 2N6111 EC106B1 Cl06B
C220U S6210A 043C4 2N61 09 EC106Ml Cl06M
C220U2 S6220A 043C5 2N6109 ESM16 2N6671
C222A S6200A 043C6 2N6109 ESM16A 2N6672
C222B S62OO0 043C7 2N61 07 ESMi6B 2N6673
C222C S62000 043C8 2N6107 ESM113 2N6384
C2220 S62OO0 043C9 2N6107 ESMl14 2N6385
C222E S6200M 043Cl0 2N6107 ESM159 2N6649
C222F S6200A 043C11 2N6107 ESM160 2N6650
C222U S6200A 043C12 2N6107 ESM191 2N6673
CS302D02 'S2062B 044C1 2N6288,B0239 ESM213 2N6387
CS304002 S20620 044C2 2N6288,B0239 ESM214 2N6386
CS305002 S2062E 044C3 2N6288,B0239 ESM217 2N6387
CS306002 S2062M 044C4 2N6290,B0239 ESM218 2N6388
CS5-2T -.W3221l. 044C5 2N6290,B0239 ESM2S9 2N6667
CS5-4T 2N3525 D4-4C6 2N6290,B0239 ESM260 2N6668
CS5-5-5T 2N4101 044C7 2N6292,B0239A ESM261 2N6667
CS10-02M S6200A 044C8 2N6292,B0239A ESM262 2N6668
CS10-02N S6210A 044C9 2N6292,B0239A -FT41 0 RCA410
CS10-05M S6200A 044C10 2N6292,B0239B FT411 B.QA411
CS10-05N S6210A 044Cl1 2N6292,B0239B FT413 RCA413
CS10-1M S6200A 044C12 B0239B FT423 RCA423
CS10-1N S6210A 044El 2N6386 FT431 RCA431
CS10-2M S6200B 044E2 2N6387 H103SC T2301F
CS10-2N S6210B 044E3 2N6388 H103S0 T2301A
CS10-4M S62000 D44H1 2N6288 Hl03SG t2302F
CS10-4N S62100 044H2 2N6288 H103SH T2303F
CS10-6M S6200M 044H4 2N6290 H103SS T2300F
CS10-6N S62100 044H5 2N6290 H113SC T2301A
CS20-05M S6200A 044H7 2N6292 Hl13S0 T2301A
CS20-05N S6210A 044H8 2N6292 H113SG T2302A
CS20-1M S6200A 044Hl0 2N6292 H113SH 2N5754
CS20-1N S6210A 044H11 2N6292 Hl13SS T2300A
CS20-2M S6200B 045Cl 2N6111,B0240 H123SC T2301B
CS20-2N S6210B 045C2 2N6111.B0240 H123S0 T2301B
CS20-4M S62OO0 045C3 2N6111,B0240 H123SH 2N!l755
CS20-4N S62100 045C4 2N6109,B0240 H123SS T2300B
42

RCA RCA RCA

H133SC T2301D MAC-36-1 T6411B MJ481 2N6471

H133SD T2301D MAC-36-2 T6411B MJ490 2N6246,2N6469
H133SG T2302D MAC-36-3 T6411B MJ491 2N6246
H133SH 2N5756 MAC-36-4 T6411B MJ802 RCS258
H133SS T2300D MAC-36-5 T6411D MJ900 . 2N6649
H143SC T2301D MAC-36-6 T6411D MJ901 2N6650
H143SD T2301D MAC-36-7 T6411M MJ920 2N6649
Hl43SG T2302D MAC-37-1 1-6401B MJ921 2N6650
H143SH 2N5756 MAC-37-2 T6401B MJ1000 RCA1000
H143SS T2300D MAC-37-3 T6401B MJ1001 RCA1001
H153SH 2N5757 MAC-37-4 T6401B MJ1200 2N6384
H163SH 2N5757 MAC-37-5 T6401D MJ1201 2N6385
HB26 2N5755 MAC-37-6 T6401D MJ1800 2N5838, BUX16C
HB46 2N5756 MAC-37-7 T6401M MJ2249 2N3879
IR140A 2N3650 MAC-38-1 T6411B MJ2250 2N3879
IR140B 2N3651 MAC-38-2 T6411B MJ2251 2N3584,BUX67B
IR140C 2N3652 MAC-38-3 T6411B MJ2252 2N3585,BUX67C
IR140D 2N3653 MAC-38-4 T6411B MJ2253 2N5955
IR140F 2N3654 MAC-38-5 T6411D MJ2254 2N5954
IR141A 2N3655 MAC-38-6 T6411D MJ2267 2N6246,2N6469
IR141B 2N3656 MAC-38-7 T6411~ MJ2268 2N6246
IR141C 2N3657 MAC40688 T6420B MJ2500 2N6050
IR141D 2N3658 MAC40689 T6420P MJ2501 2N6051
IR141F 2N3654 MAC40690 T6420rvl MJ2801 2N6371
IT06 T2850A MAC40797 T4100M MJ2840 2N3055,2N6471
IT08 T2850A MAC40798 T4110M MJ2841 2N6254,2N6472
IT16 T2850A MCR1718-5 2N3653 MJ2901 2N6246,2N6249
1T18 T285CA MCR1718-6 2N3653 MJ2940 2N6246,BDX18
IT26 T2850B MCR1718-7 S741 OM MJ2941 2N6247
IT28 T2850B MCRl718-8 S741 OM MJ2955 MJ2955
IT36 T2850D MCR3818-1 S6200A MJ3000 2N6057
IT38 T2850D MCR3818-3 S6200A MJ3001 2N6058
IT46 T2850D MCR3818-5 56200D MJ3010 BUX16B
IT48 T2850D MCR3818-7 S6200M MJ3011 BUX16B
L2001M3 T2300B MCR3835-1 2N3870 MJ3026 2N5839
L2001M4 T2300B MCR3835-2 2N3870 MJ3027 2N5840,BU126
L2001M5 T2301B MCR3835-3 2N3870 MJ3028 2N5840,BU126
L2001M7 T23Q2B MCR3835-4 2N3871 MJ3029 BUX16A
L2001M9 2N5755 MCR3835-5 2N3872 MJ3030 BUX16C
L4001M3 T2300D MCR3835-6 . 2N3872 MJ3101 2N3878
L4001M4 T2300D MCR3835-7 2N3873 MJ3201 BUX67A
L4001M5 T2310D MCR3835-8 2N3873 MJ3202 2N3§85,BUX6TIl
L4001M7 T2302D MCR391'6-1 S6210A MJ3430 2N5840,BUX18B
L4001M9 2N5756 MCR3918-3 S6210A MJ3583 2N6211
MAC-5-1 2N5569 MCR3918-5 S6210D MJ3584 2N6212
MAC-5-2 2N5569 MCR3918-7 S6210M MJ3585 2N6212
MAC-5-3 2N5569 MCR3935-1 2N3896 MJ3701 2N5956
MAC-5-4 2N5569 MCR3936-2 2N3896 MJ3760 BU126·
MAC-5-5 2N5570 MCR3935-3 2N3896 MJ3761 BU126
MAC-5-6 2N5570 MCR3935-4 2N3897 MJ3771 2N3771
MAC-5-7 T4111M MCR3935-5 2N3898 MJ3772 2N3772
MAC-5-8 T4111M MCR3935-6 2N3898 MJ3773 2N3773
MAC-15-4 MAC-15-4 MCR39aS::" 2N3899 MJ4000 2N6384,RCA1000
MAC-15-6 MAC-15-6 MCR3935-8 2N3899 MJ4001 2N6385,RCA1001
MAC-15-8 MAC-15-8 MD21SC14 MWS5114 MJ4010 2N6649
MAC-15A-4 MAC-15A-4 MJ400 2N3585 MJ4011 2N6650
MAC-15A-6 MAC-l5A-6 MJ410 RCA410 MJ4030 2N6285
MAC-15A-8 MAC-l5A-8 MJ411 RCA411 MJ4031 2N6286
MAC-35-1 T64018 MJ413 RCA413 MJ4032 2N6287
MAC-35-2 T64018 MJ423 RCA423 MJ4033 2N6282
MAC-35-3 T64018 MJ424 8UX16C MJ4034 2N6283
MAC-35-4 T64018 MJ425 8UX18C MJ4035 2N6284
MAC-35-5 T6401D MJ431 RCA431 MJ4240 2N6212
MAC-35-6 T6401D MJ450 2N6246,2N6469 MJ4502 RCA9116E
MAC-35-7 T6401M MJ480 2N6470 MJ5415 2N5415
43

RCA RCA RCA

MJ5416 2N5416 PS320 S6200D 02040 T6420B

MJ5600 2N3772 PS335 2N3872 04001MS2 T2302D
MJ5601 2N6258 PS420 S6200D 04001M2 2N5756
MJ5602 2N3773 PS435 2N3872 04003L4 T2850D
MJ5603 2N3773 PS520 S6200M 04004 T4121D
MJ6000 2N3772 PS535 2N3873 04004L4 T2850D
MJ6002 2N3773 PS620 S6200M 04006 T4121D
MJ6302 2N3773 PS635 2N3873 04006L4 T2850D
MJ15001 MJ15001 PT06 2N5567 04008 T4121D
MJ15002 MJ15002 PT08 2N5567 04010 T4121D
MJ15003 MJ15003 PT10 2N5567 04015 T4120D
MJ15004 MJ15004 PT15 2N5567 04025 T6421D
MM3005 RCA1A06 PT16 2N5567 04040 T6420D
MM4000. BFT28 PT18 2N5567 05006L4 T2850D
MM4001 BFT28A PT025 T6401B 05008 T4121M
MM4002 BFT28B PT026 2N5867 05010 T4121M
MM4003 BFT28C PT028 2N6567 05015 T4120M
MM5005 RCA1A05 PT030 T6401B 05025 T6421M
NL-C35A 2N683 PT036 2N5568 05040 T6420M
NL-C35B 2N685 PT038 2N5568 06008 T4121M
NL-C35C 2N687 PT040 2N5441 06010 T4121M
NL-C35D 2N688 PT046 2N5568 06015 T4120M
NL-C35E 2N689 PT048 2N5568 06025 T6421M
NL-C35G 2N684 PT056 T4101M 06040 T6420M
NL-C35H 2N686 PT058 T4101M 08025 T6420N
NL-C35M 2N689 PT066 T4101M 08040 T6420N
NL-C40A 2N3650 PT068 T4101M RCA106A S2060A
NL-C40B 2N3651 PT110 2N5567 RCA106B S2060B
NL-C40C 2N3652 PT115 2N5571 RCA106D S2060D
NL-C40D 2N3654 PT125 T6401B RCA106E S2060E
NL-C40E S7410M PT130 T6401B RCA106F S2060F
NL-C40G 2N3651 PT140 2N5441 RCA1060 S20600
NL-C40H 2N3652 PT210 2N5567 RCA106M S2060M
NL570M 2N690 PT215 2N5571 RCA106Y S2060Y
PMD10K60 2N6057 PT225 T6401B RCA107A S2061A
PMD10K80 2N6058 PT230 T6401B RCA107B S2061B
PMD10K1oo 2N6059 PT240 2N5441 RCA107C S2061C
PMD11K60 2N6050 PT310 2N5568 RCA107D S2061D
PMD11K80 2N6051 PT315 2N5572 RCA107E S2061E
PMD11K1oo 2N6052 PT325 T6401D RCA107F S2061F
PMD12K40 2N6383 PT330 T6401D RCA1070 S2061 0
PMD12K60 2N6384 PT340 2N5442 RCA107M S2061M
PMD12K80 2N6385 PT410 2N5568 RCA107Y S2061Y
PMD13K40 2N6648 PT415 2N5572 RCA108A S2062A
PMD13K60 2N6649 PT425 T6401D RCA108B S2062B
PMD13K80 2N6650 PT430 T64010 RCA108C S2062C
PM01601K 2N6282 PT440 2N5442 RCA1080 S20620
PM01602K 2N6283 PT510 T4101M RCA108E S2062E
PMD1603K 2N6284 PT515 T4100M RCA108F S2062F
PM01701K 2N6285 PT525 T6401M RCA1080 S20620
PM01702K 2N6286 PT530 T6401M RCA108M S2062M
PM01703K 2N6287 PT540 2N5443 RCA108Y S2062Y
PS08 S6200A PT610 T4101M RM555T CA555T
PS020 S6200A ptS15 T4100M RM723T CA723T
PS035 2N3870 PT625 T6401M RM7410C CA741G
PS18 S6200A PT630 T6401M RM741DE CA741G
PS28 S6200B 02oo1MS2 T2302B RM741T CA741T
PS38 S6200D 02oo1M2 2N5755 RM747DC CA747G
PS48 S62000 02003P T2800B RM747T CA747T
PS58 S6200M 02004 T4120B RM15580E CA1558G
PS68 S6200M 02oo6L4 T2850B RM1558T CA1558T
PS120 S6200M 02008 T4121B RTS0202 S6200A
PS135 2N3870 02010 T4121B RTS0205 S6200A
PS220 S6200B 02015 T4120B RTS0210 S6200A
PS235 2N3871 02025 T6421B RTS0220 S6200B
44

RCA RCA RCA
RTS0230 S62000 S1035G 2N3870 SC40F 2N5569

RTS0240 S62000 S1035H 2N3896 SC41A 2N5567
RTS0250 S6200M S2003RS2 S2060B SC41B 2N5567
R,TS0260 S6200M S2003RS3 S2061B SC41D 2N5568
RTS0502 56200A S2006B S6220B SC41E T4101M
RTS0505 S6200A 52006G S6200B SC41F 2N5567
RTS0510 S6200A S2006H 56210B SC45A 2N5569
RTS0520 S6200B S2008B S6220B SC45B 2N5569
RTS0530 S62000 S2008G S6200B SC45B2 T4121B
RTS0540 S62000 S2008H S6210B SC450 2N5570
RTS0550 S6200M S2010B S6220B SC4502 T41210
RTS0602 S6200A S2010G S6200B SC45E T4111M
RTS0605 S6200A S2010H S6210B SC45E2 T4121M
RTS0610 S6200A S2016B S6220B SC45F 2N5569
RTS0620 S6200B S2016G S6200B SC46A 2N5567
RTS0630 S62000 S2016H S6210B SC46B 2N5567
RTSOO40 S62000 52025G 2N3871 SC46D 2N5568
RT50050 S6200M S2025H 2N3897 SC46E T4101M
RT50060 S6200M S2035G 2N3871 SC46F 2N5567
RTU0102 S6210A S2035H 2N3897 SC50A 2N5573
RTU0105 56210A S4006B . S62200 SC50B 2N5573
RTU0110 56210A S4006G S6200D SC50B2 T4120B
RTU0120 S6210B S4006H S6210D SC50D 2N5574
RTU0130 562100 S4010B S6220D SC50D2 T41200
RTU0140 S6210D S4010G S62000 SC50E 2N5573,T4110M
RTU0150 S6210M S4010H S6210D SC50E2 T4120M
RTU0160 S6210M S4016B S6220D SC50F 2N5573
RTU0202 2N3896 S4016G S6200D SC51A 2N5571
RTU0205 2N3896 S4016H S6210D SC51B 2N5571
RTU0210 2N3896 S4025G 2N3872 SC51D 2N5572
RTU0220 2N3897 S4025H 2N3898 SC51E T4100M
RTU0230 2N3898 S4035G 2N3872 SC51F 2N5571
RTU0240 2N3898 S4035H 2N3898 SC60B T6411B
RTU0602 2N3896 S6003RS2 S2060M SC60B2 T6421B
RTU0605 2N3896 S6003RS3 S2061M SC60El12 T6411B
RTU0610 2N3896 S6006B S6220M SC60B13 T6411B
RTU0620 2N3897 S6006G S6200M SC60B14 T6414B
RTU0630 2N3898 S6006H S6210M SC60B22 T6421B
RTU0640 2N3898 S6008G S6200M SC60B23 T6421B
RTU0650 2N3899 S6008H S6210M SC60D T6411D
RTU0660 2N3899 S6010B S6220M SC60D2 T6421D
RTU0705 2N3896 S6010G S6200M SC60D12 T6411D
RTU0710 2N3896 S6010H 56210M SC60013 T6411D
RTU0720 2N3897 S6016B S6220M SC60014 T64140
RTU0730 2N3898 S6016G S6200M SC60D22 T6421D
RTU0740 2N3898 S6016H S6210M SC60D23 T6421D
RTU0750 2N3899 S6025G 2N3873 SC60E T6411M
RTU0760 2N3899 S6025H 2N3899 SC60E2 T6421M
S0525G 2N3870 S6035G 2N3873 SC60E12 T6411M
S1003RS2 S2060A S6035H 2N3899 SC60E13 T6411M
S1003RS3 S2061 A SC35A 2N5569 SC60E22 T6421M
S1006B S6220A SC35B 2N5569 SC60E23 T6421M
S1006G S6200A SC35D 2N5570 SC61B T6401B
S1006H S6210A 5C35F 2N5569 SC61B12 T6401B
S1008B S6220A SC36A 2N5567 SC61B13 T6401B
S1008G S6200A SC36B 2N5567 SC61B14 T6404B
S1008H S6210A SC36D 2N5568 SC61D T6401 D
S1010B S6220A SC36F 2N5567 SC61D12 T6401 D
S1010G S6200A SC40A 2N5569 SC61D13 T6401D
S1010H S6210A SC40B 2N5569 SC61D14 T6404D
S1016B S6220A SC40B2 T4121B SC61E T6401M
S1016G S6200A SC40D 2N5570 SC61E12 T6401M
S1016H S6210A SC40D2 T4121D SC61E13 T6401M
S1025H 2N3870 SC40E T4111M SC136A T2322A
S1025H 2N3896 SC40E2 T4121M SC136B T2322B
45
GUIDE TO PROQUCT SELECTION
RCA RCA RCA

SC136D T2322D SC246E13 T4101M SDT9704 2N6254

SC141B SC141B SC250B 2N5573 SDT9705 2N4348
SC141D SC141D SC250B2 T4120B SDT9706 2N4348
SC141E SC141E SC250B12 2N5573 SDT9707 2N3055
SC141M SC141M SC250B13 2N5573 SDT9801 2N6254
SC146B SC146B SC250B14 T4113B SDT9802 2N6254
SC146D SC146D SC250B22 T4120B SDT9803 2N6254
SC146E SC146E SC250D 2N5574 SDT9804 2N3773
SC146M SC146M SC250D2 T4120D SDT12203 2N6689
SC240B 2N5569 SC250D12 2N5574 SDT13201 2N6689
SC240B2 T4121B SC250D13 2N5574 SDT13202 2N6692
SC240B12 2N5569 SC250D14, T4113D SDT13203 2N6690
SC240B13 2N5569 SC250D22 T4120D SE555L CA555T
SC240B22 T4121B SC250E T4110M SE555N CA555E
SC240B23 T4121B SC250E2 T4120M SE555P CA555E
SC240D 2N5570 SC250E12 T4110M SE555T CA555T
SC240D2 T4121D SC250E13 T4110M SE9300 TIP120
SC240D12 2N5570 SC250E22 T4120M SE9301 TlP121
SC240D13 2N5570 SC251B 2N5571 SE9302 TIP122
SC240D22 T4121D SC251B12 2N5571 SE9303 2N6384
SC240D23 T4121D SC251B13 2N5571 SE9304 2N6385
SC240E T4111M SC251B14 T4103B SPC410 RCA410
SC240E2 T4121M SC251D 2N5572 SPC411 RCA411
SC240E12 T4111M SC251D12 2N5572 SPC413 RCA413
SC240E13 T4111M SC251D13 2N5572 SPC423 RCA423
SC240E22 T4121M SC251E T4100M SPC43.1 RCA431
SC240E23 T4121M SC251E12 T4100M SPS08 S6210A
SC241B 2N5567 SC251E13 T4100M SPS18 S6210A
SC241B12 2N5567 SDT410 RcM-1-0 SPS020 S6210A
SC242B13 2N5567 SDT411 RCA411 SPS28 S6210B
SC241D 2N5568 SDT413 RCA413 SPS38 S6210D
SC242D12 2N5568 SDT423 RCA423 SPS48 S6210D
SC241D13 2N5568 SDT431 RCA431 SPS58 S6210M
SC241E T4101M SDT6901 2N6078 SPS68 S6210M
SC241E12 T4101M SDT6902 2N6078 SPS120 S6210A
SC241E13 T4101M SDT6903 2N6078 SPS220 S6210B
SC245B 2N5569 SDT6904 2N6078 SPS320 S6210D
SC245B2 T4121B SDT6905 2N6078 SPS420 S6210D
SC245B12 2N5569 SDT6906 2N6078 SPS520 S6210M
SC245B13 2N5569 SDT6907 2N6078 SPS620 S6210M
SC245B14 T4115B SDT6908 2N6078 SPT06 2N5569
SC245B22 T4121B SDT7601 2N5039 SPT08 2N5569
SC245B23 T4121B SDT7602 2N5039 SPT10 2N5569
SC245D 2N5570 SDT7603 2N5038 SPT15 2N5573
SC245D2 T4121D SDT7604 2N6496 SPT16 2N5569
SC245D12 2N5570 SDT7605 2N6249 SPT18 2N5569
SC245D13 2N5570 SDT7607 2N5039 SPT025 T641'1B
SC245D14 T4115D SDT7608 2N5039 SPT030 T6411B
SC245D22 T4121D SDT7609 2N5038 SPT26 2N5569
SC245D23 T4121D SDT7610 2N6354 SPT28 2N5569
SC245E T4111M SDT7731 2N6470 SPT36 2N5570
SC245E2 T4121M SDT7732 2N6471 SPT38 2N5570
SC245E12 T4111M SDT7733 2N6472 SPT40 2N5444
SC245E13 T4111M SDT9201 2N3055 SPT46 2N5570
SC245E22 T4121M SDT9202 2N6254 SPT48 2N5570
SC245E23 T4121M SDT9203 2N4348 SPT56 T4111M
SC246B 2N5567 SDT9204 2N4348 SPT58 T4111M
SC246B12 2N5567 SDT9205 2N3055 SPT68 T4111M
SC246B13 2N5567· SDT9206 2N3055 SPT110 2N5569
SC246B14 T4105B SDT9207 2N6254 SPT115 2N5573
SC246D 2N5568 SDT9208 2N4348 SPT125 T6411B
SC246D12 2N5568 SDT9209 2N4348 SPT130 T6411B
SC246D13 2N5568 SDT9210 2N6253 SPT140 2N5444
SC246E T4101M SDT9702 2N4348 SPT21 0 2N5569
SC246E12 T4101M SDT9703 2N4348 SPT215 2N5573
46

RCA RCA RCA
8PT225 T6411B TAG-200-100 T2302A TOAL223A 2N5756

8PT230 T6411B TAG-201-100 T2303A TIC20 2N5567
8PT240 2N5444 TAG-200-200 T2302B TIC21 2N556B
8PT310 2N5570 TAG-201-200 T2303B TIC22 2N5569
8PT315 2N5574 TAG-200-400 T23020 TIC23 2N5570
8PT325 T64110 TAG-201-400 T23030 TIC106A 82060A
8PT330 T64110 TAG-202-100 T2302A TIC106B 82060B
8PT340 2N5445 TAG-202A-l00 T2302A TIC106C 82060C
8PT410 2N5570 T AG-202-200 T2302B TlCl060 820600
8PT415 2N5574 TAG-202A-200 T2302B TIC106F 82060F
8PT425 T64110 TAG-202-400 T23020 TIC106Y 82060Y
8PT430 T64110 T AG-202A-400 T23020 TICl16A C122A
8PT440 2N5445 TAG-203-100 T2301A TIC116B _C122l'!
8PT51 0 T4111M TAG-203A-l00 T2301A TIC116C C122C
8PT515 T4110M T AG-203-200 T2301B TIC1160 C1220
8PT525 T6411M T AG-203A-200 T2301B TICl16E C122E
8PT530 T6411M T AG-203-400 T23010 TIC116F C122F
8PT540 2N5446 T AG-203A-400 1'23010 TICl16M ~1<12M
8PT610 T4111M TAG-204-100 T2300A TIC126A 2N6395
8PT615 T4110M TAG-204A-l00 T2300A TIC126B 2N6396
8PT625 T6411M T AG-204-200 T2300B TIC1260 2N6397
8PT630 T6411M TAG-204A-200 T2300B TIC126F 2N6349A
8PT640 2N5446 T AG-204-400 T23000 TIC126M 2N639B
8TS410 RCA410 T AG-204A-400 T23000 TIC226B T2BOOB
8T8411 RCA411 TAG-205-100 T2303A TIC2260 T2BOOO
8T8413 RCA413 TAG-205-200 T2303B TIC250B T6401B
8T8423 RCA423 TAG-205-400 T23030 TIC2500 T64010
8T8431 RCA431 T AG-206-1 00 T2302A TIC250E T6401M
8VT300-5B 2N66B9 TAG-206-200 T2302B TIC250M T6401M
8VT300-10B 2N6689 T AG-206-400 T23020 TIC252B T6411B
T1482 40311 T AG-220-200 T2500B TIC2520 T64110
T1484 2N697 TAG-220-400 T25000 TIC252E T6411M
T1492 40407 TAG-224-200 T2800B TIC252M T6411M
T1493 2N1613 TAG-224-400 T28020 TIC260B T6401B
TAG136 T23220 TAG-224-600 T2802M TIC2.600 T64010
TAG-6-100 2N3668 TAG-225-200 T2800B TIC260E T6401M
TAG-6-200 2N3669 TAG-225-400 T28000 TlC260M T9401M
TAG-6-400 2N3670 TAG-225-600 T2800M TIC262B T6411B
TAG-6-500 2N4103 TAG-240-200 T2850B TIC2620 T6411 0
TAG-6-600 2N4103 T AG-240-400 T2B500 TIC262E T6411M
TAG-7-100 85210B TAG-241-200 T2B500 TIC262M T6411M
TAG-7-200 85210B TAG-245-200 T2850B TIC270B 2N5441
TAG-7-400 852100 TAG-245-400 T28500 TIC2700 2N5442
TAG-7-500 85210M TAG-246-200 T2B50B TIC270E 2N5443
TAG-7-600 85210M T AG-246-400 T28500 TIC270M 2N5443
TAG-l0-l00 87310B TAG-255-200 T6000B TIC272B 2N5444
TAG-l0-200 87310B T AG-255-400 T60000 TIC2720 2N5445
TAG-l0-400 873100 T AG-255-600 T6000M TIC272E 2N5446
TAG-l0-500 87310M T AG-255A-200 T6000B TIC272M 2N5446
TAG-l0-600 87310M TAG-255A-200 T.60000 TIP29 B0239,TIP29
TAG-15-100 86210A TAG-255A-200 T6000M TIP29A B0239A,TIP29A
TAG-15-200 86210B TAG-260-200 T2700B TIP29B B0239B,TIP29B
TAG-15-400 862100 T AG-260-400 1'27000 fjP29C sb239C,TIP29C
TAG-15-500 86210M TAG-261-200 T2700B TIP30 B0240,TIP30
TAG-15-600 86210M TAG-261-400 T27000 TIP30A B0240A,TIP30A
TAG-20-100 86210A TAG-265-200 T4700B TIP30B B0240B,TIP30B
TAG-20-200 86210B T AG-265-400 T47000 TIP30C ~P240C,TIP30C
TAG-20-400 862100 TAG-266-200 T4700B tfP3f- B0241,TIP31
TAG-20-500 86210M T AG-266-400 T47000 TIP31A B0241A,TIP31A
TAG-20-600 86210M TAG-2BO-200 T6000B TIP31B B0241 B,TIP31 B
TAG-35-100 86410A TAG-2BO-400 T60000 TIP31C B0241C,TIP31C
TAG-35-200 86410B TAG-2BO-600 T6000M TIP32 B0242,TIP32
TAG-35-400 864100 TOAL113A 2N5754 TiP32A B0242A,TIP32A
T AG-35-500 . 86410M TOALl13B T2302B TIP32B B0242B,TIP32B
TAG-35-600 86410M TOALl138 T2300B TIP32C B0242C,TIP32C
47
(Industry TYpe to Equivalent RCA Type)
RCA RCA RCA
Industry Replacement Indultry Replacement Indultry Repl_ment
TIP41 BD243,TIP41 TRAL1140D T6420B TYAL118M T2802B

TIP41A BD243_A,TIP41 A TRAL2210D 2N5570 TYAL223B T2500D
TIP41B BD243B,TIP41 B TRAL2215D 2N5574 TYAL223C T2500D
TIP41C BD243C,TlP41C TRAL2225D T6411D TYAL223M T2801D
TIP42 BD244,TIP42' TRAL2230D T6421D TYAL226B T2500D
TIP42A Bq244A,TIP42A TRAL2240D T6420D TYAL226C T2500D
TIP42B BD244B,TIP42B TS2218 2N1613 TYAL226M T2801D
TIP42C BD244C,tTp42C TS2219 2N1711 TYAL228B T2800D
TIP100 TIP100 TS2904 40406 TYAL228C T2800D
TIP101 TIP101 TX01A) 0 T2700A TYAL228M T2802D
TIP102 TIP102 TXC01A20 T2700B TYAL1110B T2800B
.TIP110 .B.P.X33A TXC01A40 T2700D TYAL1110C T2800B
TIP111 BDX33B TXC01B10 T2700A TYAL1110M T2802B
TIP112 BDX33C TXC01B20 T2700B TYAL2210B T2800D
TIP115 BDX34A TXC01B40 T?700D TYAL2210C T2800D
TIP116 BDX34B TXC01C10 T2700A TYAL2210M T2802D
TIP117 BDX~C_ TXC01C20 T2700B
'I"IP120 BDX33A,TIP120 TXC01C40 T2700D
TIP121 BDX33B,TIP121 TXC01D10 T2700A
-TIP122 BDX33C,TIP122 TXC01D20 T2700B
-TIP125 BDX34A,TIP125 TXC01D40 T2700D
TIP126 BDX34B,TIP.1?!!. TXC01E10 T2700A
TIP127 BPX34C,TIP127 TXC01E20 T2700B
TIP130 BDX33A TXC01E40 T2700D
TIP131 BDX33B TXC01F10 T2700A
TIP132 BDX33C TXC01F20 T2700B
TIP1.3S_ BDX34A TXC01F40 T2700D
TIP136 BDX34B TXD98A20 2N5573
TIP137 BDX34C TXD98A40 2N5574
TIP140 2N6387 TXD98A50 T4110M
TIP141 2N6530 TXD99A20 2N5569
TIP142 2N6531 TXD99A40 2N5570
TIP145 2N6666 TXD99A50 T4111M
TIP146 2N6667 TXE99A20 T6411B
TIP147 2N6668 TXE99A40 T6411D
TIP525 2N6671 TXE99A50 T6411M
TIP527 2N6674 TY504 S2062A
TIP531 2N8250 TY1004 S2062A
TIP532 2N6675 TY2oo4 S2062B
TIP535 BUX17A TY3004 S2062C
TIP536 2N6674 TY4004 S2062D
TIP537 2N6675 TY5004 S2062E
TIP538 2N62SO TY6Q04 S2062M
TIP539 2N6250 TY507 C122A
TIP544 2N6248 TY1007 C122A
TlP546 2N6469 TY2oo7 C122B
TIP554 2N6671 TY3007 C122C
TiP555 2N6872 TY4007 C122D
TIP556 2N6873 TY5OO7 C122E
·TIP562 TIP562 TY6Q07 C122M
TIP563 TIP563 TY51 0 S2800F
TIP620 2N6383 TY1010 S2800A
tfP621 2N6384 TY2010 S2800B
.TIP622 2N8385 TY301 0 S2800C
TIP640 2N6384 TY4010 S2800D
TIP641 2N6385 TY5010 S2800E
TIP642 2N6385 TY6010 S2800M
TIP645 2N6666 TYAL113B T2500B
TIP646 2N6667 TYAL113C T2500B
TIP647 2N6668 TYAL113M T2801B
TIP3054 RCA3054 TYAL116B T2500B
TRAL1110D 2N5569 TYAL116C T2500B
TRAL1115D 2N5573 TYAL116M T2801B
TRAL1125D T6411B TYAL118B T2800B
TRAL1130D T6421B TYAL118C T2800B
48
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GUIDE TO PRODUCT SELECTI()~
Operating Considerations
Solid state devices are being designed into an increasing Thyristors," and JEDEC Standard RS282 "Standards for
"variety of electronic equipment because of their high Silicon Rectifier Diodes and Stacks".
standards of reliability and performance. However, it is The metal shells of some solid state devices operate at the
essential that equipment designers be mindful of good collector voltage and for some rectifiers and thyristors at the
engineering practices in the use of these devices to achieve anode voltage. Therefore, consideration should be given to
the desired performance. the possibility of shock hazard if the shells are to operate at
This Note' summarizes important operating recommen- voltages appreciably above or below ground potential. In
dations and precautions which should be followed in the general, in any application in which devices are operated at
interest of maintaining the high standards of performance of voltages which may be dangerous to personnel, suitable
solid state devices. precautionary measures should be taken to prevent direct
The ratings included in RCA Solid State Devices data contact with these devices.
bulletins are based 00 the Absolute Maximum Rating Devices should not be connected into or disconnected
System, which is defined by the following Industry Standard from circuits with the power on because high transient
(JEDEC) statement: voltages may cause permanent damage to the devices.
Absolute-Maximum Ratings are limiting values of opera-
ting and environmental conditions applicable to any electron
device of a specified type as defined by its published data, TESTI NG PRECAUTIONS
and should not be exceeded under the worst probable In common with many electronic components, solid-state
conditions. devices should be operated and tested in circuits which have
The device manufacturer chooses these values to provide reasonable values of current limiting resistance, or other
acceptable serviceability of the device, taking no responsi- forms of effective current overload protection. Failure to
bility for equipment variations, environmental variations, and observe these precautions can cause excessive internal heating
the effects of changes in operating conditions due to of the' device resulting in destruction and/or possible
variations in device characteristics. shattering of the enclosure.
The equipment manufacturer should design so that
initially and throughout life no absolute-maximum value for TRANSISTORS AND THYRISTORS
the intended service is exceeded with any device under the WITH FLEXIBLE LEADS
worst probable operating conditions with respect to supply- Flexible leads are usually soldered to the circuit elements.
voltage variation, equipment component variation, equip- It is desirable in all soldering ope ratings to provide some
ment control adjustment, load variation, signal variation, slack or an expansion elbow in each lead to prevent
environmental conditions, and variations in device charac- excessive tension on the leads. It is important during the
teristics. soldering operation to avoid excessive heat in order to
It is recommended that equipment manufacturers consult prevent possible damage to the devices. Some of the heat can
RCA whenever device applications involve unusual electrical, be absorbed if the flexible lead of the device is grasped
mechanical or environmental operating conditions. between the case and the soldering point with a pair of pliers.
GENERAL CONSIDERATIONS TRANSISTORS AND THYRISTORS

The design flexibility provided by these devices makes WITH MOUNTING FLANGES
possible their use in a broad range of applications and under The mounting flanges of JEDEC-type packages such as
many different operating conditions. -When incorporating the TO-3 or TO·66 often serve as the collector or anode
these devices in equipment, therefore, designers should terminal. In such cases, it is essential that the mounting
anticipate the rare possibility of device failure and make flange be securely fastened to the heat sink, which may be
certain that no safety hazard would result from such an the equipment chassis. Under no circumstances, however,
occurrence. should the mounting flange of a transistor be soldered
The small. size of most solid state products provides directly to the heat sink or chassis because the heat of the
obvious advantages to the designers of electronic equipment. soldering operation could permanently damage the device.
However, it should be recognized that these compact devices Soldering is the preferred method for mounting thyristors;~
usually provide only relatively small insulation area between see· "Rectifiers and Thyristors," below. Devices which cannot
adjacent leads and the metal envelope. When these devices be soldered can be installed in commercially available
are used in moist or contaminated atmospheres, therefore, sockets. Electrical connections may also be made by
supplemental protection must be provided to prevent the soldering directly to the terminal pins. Such connections may
development of electrical conductive paths across the be soldere4 to the pins close to the pin seals provided care is
relatively small insulating surfaces. For specific information taken to conduct excessive heat away from the seals;
on voltage creepage, the user should consult references such otherwise the heat of the soldering operation could crack the
as the JEDEC Standard No. 7 "Suggested Standard on pin seals and damage the device.
_________________________________________________________________________ 49
During operation, the mounting-flange temperature is long-nosed pliers may be used. The pliers should hold the
higher than the ambient temperature by an amount which lead firmly between the bending point and the case, but
depends on the heat sink used. The heat sink must have should not touch the case.
sufficient thermal capacity to assure that the heat dissipated When the leads of an in-line plastic package are to be
in the heat sink itself does not raise the device mounting- formed, whether by use of long-nosed pliers or a special
flange temperature above the rated value. The heat sink or bending fixture, the following precautions must be observed
chassis may be connected to either the positive or negative to avoid internal damage to the device:
supply.
In many applications the chassis is connected to the I. Restrain the lead between the bending poin t and the
voltage-supply terminal. If the recommended mounting plastic case to prevent relative movement between the
hardware shown in the data bulletin for the specific lead and the case.
solid-state device is not available, it is necessary to use either 2. When the bend is made in the plane of the lead
an anodized aluminum insulator having high thermal con- (spreading), bend only the narrow part of the lead.
ductivity or a mica insulator between the mounting-flange 3. When the bend is made in the plane perpendicular to that
and the chassis. If an insulating aluminum washer is required, of the leads, make the bend at least 1/8 inch from the
it should be drilled or punched to provide the two mounting plastic case.
holes for the terminal pins. The burrs should then be 4. Do not use a lead-bend radius of less than 1/16 inch.
removed from the washer and the washer anodized. To insure 5. Avoid repeated bending of leads.
that the anodized insulating layer is not destroyed during
mounting, it is necessary to remove the burrs from the holes The leads of the TO-220AB VERSAWATT in-line
in the chassis. package are not designed to withstand excessive axial pull.
/! is also important that an insulating bushing, such as Force in this direction greater than 4 pounds may result in
glass-filled nylon, be used between each mounting bolt and permanent damage to the device. If the mounting arrange-
the chassis to prevent a short circuit. However, the insulating ment tends to impose axial stress on the leads, some method
bushing should not exhibit shrinkage or softening under the of strain relief should be devised.
operating temperatures encountered. Otherwise the thermal
Wire wrapping of the leads is permissible, provided that
resistance at the interface between device and heat sink
the lead is restrained between the plastic case and the point
may increase as a result of decreasing pressure.
of the wrapping. Soldering to the leads is also allowed. The
maximum soldering temperature, however, must not exceed
PLASTIC POWER TRANSISTORS AND THYRISTORS
275 0 C and must be applied for not more than 5 seconds at a
RCA power transistors and thyristors (SCR's and triacs) distance not less than 1/8 inch from the plastic case. When
in molded-silicone-plastic packages are available in a wide wires are used for connections, care should be exercised to
range of power-dissipation ratings and a variety of package assure that movement of the wire does not cause movement
configurations. The following paragraphs provide guidelines of the lead at the lead-to-plastic junctions.
for handling .and mounting of these plastic-package devices,
The leads of RCA molded-plastic high-power packages·
recommend forming of leads to meet specific mounting
are not designed to be reshaped. However, simple bending of
requirements, and describe various mounting arrangements,
the leads is permitted to change them from a standard
thermal considerations, and cleaning methods. This informa-
vertical to a standard horizontal configuration, or conversely.
tion is intended to augment the data on electrical character-
Bending of the leads in this manner is restricted to three
istics, safe operating area, and performance capabilities in the
90-degree bends; repeated ben dings should be avoided.
technical bulletin for each type of plastic-package transistor
or thyristor.
Mounting
Lead-Forming Techniques Recommended mounting arrangements and suggested
The leads of the RCA VERSAWATT in-line plastic hard ward for the VERSAWATT package are given in the data
packages can be formed to a custom shape, provided they are bulletins for specific devices and in RCA Application Note
not indiscriminately twisted or bent. Although these leads AN-4142.* When the package is fastened to a heat sink, a
can be formed, they are not flexible in the general sense, nor rectangular washer (RCA Part No. NR231 A) is recommended
are they sufficiently rigid for unrestrained wire wrapping to minimize distortion of the mounting flange. Excessive
Before an attempt is made to form the leads of an in-line distortion of the flange could cause damage to the package.
package to meet the requirements of a specific application, The washer is particularly important when the size of the
the desired lead configuration should be determined, and a mounting hole exceeds 0.140 inch (6-32 clearance). Larger
lead-bending fixture should be designed and constructed. The holes are needed to accolllmodate insulating bushings;
use of a properly designed fixture for this operation however, the holes should not be larger than necessary to
eliminates the need for repeated lead bending. When the use provide hardware clearance and, in any case, should not
of a special bending fixture is not practical, a pair of exceed a diameter of 0.250 inch.
*This Note is included in the Appendix to this DATABOOK.

50 ________________________________________________________________________
Flange uistortion is also possible if excessive torque is the power dissipation be maintained below the level which
used during mounting. A maximum torque of X inch·pounds would cause the junction temperature to rise above the
is specifieu. Care should be exerciseu to assure that the tllol maximum rating. However, when the device is mounted on a
used to drive the mounting screw never comcs in contact heat sink, care must be taken to assure that an portions of
with the plastic bouy during the uriving opcration. Such the thermal circuit are considered.
contact can result in uamage to the plast k body anu internal To assure efficient heat transfer from case to heat sink
device connections. An excellent methou of avoiding this when mounting RCA molded-plastic solid state power
problem is to usc a spacer or combination spacer·isolating devices, the following special precautions should be
bushing whkh raises the screw heau or nut above the top observed:
surface of the plastic bouy. The material used for such a
spacer or spacer·isolating bushing shoulu. of course. be I. Mounting torque should be between 4 and 8 inch-
carefully selecteu to avoiu "cold !low" and consequent pounds.
reduction in mounting force. Suggesteu materials for these 2. The mounting holes should be kept as small as possible.
bushings are diallphtalate. fiberglass·filled nylon. or 3. Holes should be drilled or punched clean with no burrs or
fiberglass-filled polycarbonate. Unfilled nylon should be ridges, and chamfered to a maximum radius of 0.010
avoided. inch.
Modification of the !lange can also result in !lange 4. The mounting surface should be flat within 0.002
distortion and should not be attempted. The package should inch/inch.
not be soldered to the heat sink by usc of lead·tin soluer 5. Thermal grease (Dow Corning 340 or equivalent) should
because the heat required with this type of solder will cause always be used on both sides of the insulating washer if
the junction temperature of the device to become excessively one is employed. The bleed rate of the thermal-grease
. high. compound should be such that it does not exceed 0.5
The TO-220AA plastic package can be mounted in per cent after 24 hours at 200°C.
commercially available TO-66 sockets, such as UID 6. Thin insulating washers should be used. (Thickness of
Electronics Corp. Socket No. PTS-4 or equivalent. For factory-supplied mica washers range from 2 to 4 mils).
testing purposes, the TO-220AB in-line package can be 7. A lock washer or torque washer, made of material having
mounted in a Jetron Socket No. DC74-104 or equivalent. sufficient creep strength, should be used to prevent
Regardless of the mounting method, the following degradation of heat sink effiCiency during life.
precautions should be taken:
A wide variety of solvents is available for degreasing and
I. Use appropriate hardware. flux removal. The usual practice is to submerge components
2. Always fasten the package to the heat sink before the in a solvent bath for a specified time. However, from a
leads are soldered to fixed terminals. reliability stand point it is extremely important that the
3. Never allow the mounting tool to come in contact with solvent, together with other chemicals in the solder-cleaning
the plastic case. system (such as flux and solder covers), do not adversely
4. Never exceed a torque of 8 inch-pounds. affect the life of the component. This consideration applies
5. Avoid oversize mounting holes. to a1l non-hermetic and molded-plastic components.
6. Provide strain relief if there is any probability that axial It is, of course, impractical to evaluate the effect on
stress will be applied to the leads. long-term device life of all cleaning solvents, which are
7. Use insulating bushings to prevent hot-creep problems. marketed with numerous additives under a variety of brand
Such bushings should be made of diallphthalate, fiber- names. These solvents can, however, be classified with
glass-filled nylon, or fiberglass-filled polycarbonate. respect to their component parts as either acceptable or
The maximum allowable power dissipation in a solid unacceptable. Chlorinated solvents tend to dissolve the outer
state device is limited by the junction temperature. An package and, therefore, make operation in a humid atmos-
important factor in assuring that the junction temperature phere unreliable. Gasoline and other hydrocarbons cause the
inner encapsulant to swell and damage the transistor. Alcohol
remains below the specified maximum value is the ability of
is an acceptable solvent. Examples of specific, acceptable
the associated thermal circuit to conduct heat away from the
device. alcohols are isopropanol, methanol, and special denatured
alcohols, such as SDAI, SDA30, SDA34, and SDA44.
When a solid state device is operated in free air, without a Under certain conditions. dimethyl silicone 'fluids may
heat sink, the steady-state thermal circuit is defined by the react chemically with the encapsulant of plastic devices and
junction-to-free-air thermal resistance given in the published cause damage to the package. These fluids do not cause'
data for the device. Thermal considerations require that a damage when they are coiltained in materials such as thermal
free flow of air around the device is always present and that compounds. These fluids. however. are unacceptable for use
_________________________________________________________________________ 51
GUIDE TO PRODUCT SELECTION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
as baths or encapsulants for plastic-package devices_ In ually, the heat source should be held on the heat sink and the
addition. plastic-package devices should mit be used or stored solder on the unit. Heat should be applied only long enough
in environments that contain significant amounts of dimethyl to permit solder to flow freely. For more detailed thyristor
silicone fl uid. mounting considerations, refer to Application Note AN3822,
Care must also be used in the selection of fluxes for lead "Thermal Considerations in Mounting of ,RCA Thyristors".
soldering. Rosin or activated rosin fluxes are recommended,
while organic or acid fluxes are not. Examples of acceptable SOLID STATE CHIPS
fluxes are: Solid state chips, unlike packaged devices, are non-
1. Alpha Reliaros No. 320-33 hermetic devices, normally fragile and small in physical size,
2_ Alpha Reliaros No. 346· and therefore, require special handling considerations as
3_ Alpha Reliaros No. 711 follows:
4. Alpha Reliafoam No_ 807 1. Chips must be stored under proper conditions to insure
5. Alpha Reliafoam No. 809 that they are not subjected to a moist and/or contam-
6. Alpha Reliafoam No. 811-13 inated atmosphere that could alter their electrical,
7. Alpha Reliafoam No. 815'-35 physical, or mechanical characteristics. After the shipping
8. Kester No. 44 container is opened, the chip must be stored under the
If the completed assembly is to be encapsulated, the following conditions:
effect on the molded-plastic transistor must be studied from A. Storage temperature, 40 0 C-max.
both a chemical and a physical standpoint. B. Relative humidity, 50% max.
C. Clean, dust-free environment.
THYRISTORS
2. The user must exercise proper care when handling chips
A surge-limiting impedance should always be used in
to prevent even the slightest physical damage to the chip.
series with thyristors. The impedance value must be suf-
ficient to limit the surge current to the value specified under 3. During mounting and lead bonding of chips the user must ,
the maximum ratings. This impedance may be provided by use proper assembly techniques to obtain proper elec-
the power transformer winding, or by an external resistor or trical. thermal, and mechanical performance.
choke. 4. After the chip has been mounted and bonded, any
A very efficient method for mounting thyristors utilizing necessary procedure must be followed by the user to
the "modified TO-S" package is to provide intimate contact insure that these non-hermetic chips are not subjected to
between the heat sink and at least one half of the base of the moist or contaminated atmosphere which might cause
device opposite the leads. This package can be mounted to the development of electrical conductIve paths across the
the heat sink mechanically with glue of an expoxy adhesive. relatively small insulating surfaces. In addition, proper
or by soldering, the most efficient method. consideration must be given to the protection of these
The use of a "self-jigging" arrangement and a solder devices from other harmful environments which could
preform is recommended. If each unit i~ soldered individ- conceivably adversely affect their proper performance.
52 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ~ _ _ _ _ _ _ _ _ __
Terms and Symbols

General Cib common-base input capaci- IC continuous collector current
tance ICBO collector-cutoff current,
AQL acceptance quality level
Cob common-base output capaci- emitter open
CM cross modulation
tance ICEO collector-cutoff current,
IMO intermodulation distortion
Cobo open-circuit common-base base open
K post-radiation neutron-
output capacitance ICER collector-cutoff current with
damage constant
ES/b reverse-bias second-break- specified resistance between
LTPO lot tolerance per cent
down energy base and e;nitter
defective
fab base (alpha) cutoff frequency ICES collector-cutoff current with
MTBF mean time between failures
fae emitter (beta) cutoff base-emitter junction short-
MTTF mean time to failure
frequency circuited
NF noise factor (or noise figure)
hFE dc forward-current transfer ICEV collector-cutoff current with
Po device dissipation
ratio specified voltage between
pps pulses per second
P rr pulse repetition rate hfe common-emitter, small- base and emitter
prt pulse recurrence time signal, short-circuit, forward- ICEX collector-cutoff current with
PW pulse width current transfer ratio specified circuit between
RMS root mean square Ihfel magnitude of common- base and emitter
thermal resistance, junction- emitter, small-signal, short- ICM peak collector current
ROJA
to-ambient circuit, forward-current IC(sat) collector current at which hFE'
thermal resistance, junction- transfer ratio VBE(sat), VCE(sat). and
ROJC
to-case fhfe common-emitter, small- switching speeds are measured
thermal resistance, junction- signal, short-circuit forward- continuous emitter current
ROJF IE
to-flange current transfer ratio cutoff emitter-cutoff current, collec-
lEBO
frequency tor open
ROJFA thermal resistance,
fT gain-bandwidth product IEM peak emitter current
junction-to-free air
(unity-gain frequency for forward-bias, second-break-
thermal resistance, junction- ISlb
ROJHS devices in which gain roll off down collector current
to-heat sink
has a -1 slope) power gain
TA ambient temperature PG
Gc conversion gain
TC case temperature PRT power rating test
Gpb small-signal, common-base
THO total harmonic distortion PT transistor dissipation at
power gain
TJ operating (junction) tempera- specified temperature
GpB large-signal, common-base
ture power gain rbb' base spreading resistance
TL lead temperature during G pe small-signal, common-emitter RBB base bias resistor
soldering power gain
pulse duration rb'Cc collector-to-base time constant
tp GpE large-signal, common-emitter
T stg storage temperatu re RBE external base-to-emitter
power gain
efficiency resistance
17 GVE wide-band voltage gain
0 conduction angle RC collector resistor
hib common-base, small-signal,
</> phase angle rCE(sat) dc collector-to-emitter
short-circuit input im-
</>L lead radius (for bending) saturation resistance
pedance
T torque Re(h ie ) real part of common-emitter,
hie common-emitter, small-signal,
device stud torque small-signal, short-circuit in-
Ts short-circuit input im-
put impedance
pedance
Rs collector-to-emitter saturation
hob common-base, small-signal,
resistance
open circuit output
tc clamped turn-off switching
Power Transistors admittance
time of an inductive load
(C) collector-to-base charge- h rb common-base, small-signal,
td delay time
generation constant (during open-circuit reverse-voltage
tf fall time
gamma exposure) transfer ratio
tOFF turn-off time (storage time +
IB continuous base current
Cb'c feedback capacitance fall time)
IBEV base-cutoff current with turn-on time (delay time +
Cc collector-to-case tON
specified voltage between rise time)
capacitance
collector and emitter rise time
Ccb collector-to-base feedback tr
capacitance IBM peak base Current ts storage time
53
Terms and Symbols

Power Transistors (Cont'd) VEBO emitter-to-base voltage, iO instantaneous off-state
TVI cfamped inductive collector open current
turn-off time VF diode forward-voltage drop iOO instantaneous off-state
VBe base supply voltage VRT collector-to-emitter reach- current, gate open
VBE base-to-emitter voltage through (or punch through) 100M maximum (peak) off-state
VBE(sat) base-to-emitter saturation voltage current, gate open
voltage a common-base current gain
'OROM maximum peak (repetitive)
V (BR)CBO collector-to-base breakdown (alpha) off-state current, gate open
voltage, emitter open {3 collector-emitter current dc off-state current, specified
'ORX
V (BR)CEO collector-to-emitter break- gain (beta) circuit between gate and
down voltage, base open llC collector efficiency cathode
V(BR)CEV collector-to-emitter break- TI thermal time constant maximum (peak) repetitive dc
'ORXM
down voltage with specified off-state current with speci-
voltage between base and fied circuit between gate and
emitter Power Hybrid Operational Amplifiers cathode
V (BR)CEX collector-to-emitter A voltage gain IOXM maximum (peak) off-state
breakdown voltage ACL cfosed-Ioop voltage gain current, specified circuit
with specified circuit AOL open-loop voltage !lain between gate and cathode
between base and em itter CMRR common-mode rejection ratio iF instantaneous forward current
V(BR)EBO emitter-to-base breakdown fH closed-loop bandwidth 'FM peak forward current
voltage, collector open Ii idling current 'FRM peak repetitive forward current
collector-to-base voltage liB input bias current 'FSM peak surge forward current
VCB
collector-to-base voltage, ',0 input offset current (nonrepetitive)
VCBO
emitter open 10 quiescent current 'G dc gate current
collector supply voltage 10m maximum peak quiescent Ig pulsed gate trigger current
VCC
collector-to-em itter voltage current (gate drive current)
VCE
collector-to-emitter voltage, IS short-circuit current maximum (peak) gate current
VCEO 'GM
base open PT total power dissipation for 'GR(BR) reverse gate breakdown
VCE(sat) collector-to-emitter satura- each output transistor current
tion voltage Rem common-mode input im- IGRRM maximum (peak) reverse gate
VCEO(sus) collector-to-emitter sustaining pedance current'
voltage, base open SIN signal-to-noise ratio dc gate trigger current
'GT
collector-to-emitter voltage SR slew rate iHO instantaneous holding current,
VCER
with specified' resistance V,CR common-mode input voltage gate open
range dc holding current, gate open
between base and em itter 'HO
Y,N input signal voltage swing iL instantaneous latching current
VCER(sus) collector-to-emitter sustaining
voltage with specified res is- V,O input offset voltage dc latching current
offset voltage 'L
tance between base and Voffset '0 average dc forward current
VOUT output voltage swing dc reverse current
emitter 'R
collector-to-emitter voltage VOUr1VIN voltage gain, iR instantaneous reverse current
VCES supply-voltage ripple
with base-emitter junction VRR iRO instantaneous reverse current,
rejection ratio gate open
short-circuited
Vs supply voltage maximum (peak) reverse
VCEV collector-to-emitter voltage 'RM
with specified voltage between Z,N input impedance current
base and emitter 61i idling-current drift maximum (peak) reverse
'RROM
VCEV(sus) collector-to-emitter sustaining current, gate open
voltage with specified voltage 'RRX dc reverse current, specified
between base and emitter Thyristors circuit between gate and
(Triaes, SeR's and 'TR'sl cathode
VCEX collector-to-emitter voltage
with specified circuit between di/dt rate of change of on-state 'RRXM maximum (peak) reverse
base and emitter current current, specified circuit
VCEX(sus) collector-to-emitter sustaining diF/dt rate of change of forward between gate and cathode
,2t amperes squared-seconds
voltage with specified circuit current (rectifier unit of 'TR) ,
between base and emitter dv/dt critical rate of rise of off- (fusing current for device
emitter-to-base voltage state vo Itage protection)
VEB
54
Terms and Symbols

Thyristors tq circuit com mutated turn-off VG dc gate voltage
(Triacs, SCR's and ITR's) (Cont'd) time (t rr + tg(rec)) VGK dc gate-to-cathode voltage
tr rise time VGR dc reverse gate voltage
trr reverse recovery ti me VGR(BR) reverse gate breakdown
iT instantaneous on-state current ts storage time voltage
IT dc on-state current V(BO) breakover voltagp VGRM maximum (peak) gate reverse
IT(AV) average on-state current V(BO)O instantaneous breakover voltage
ITM maximum (peak) on-state voltage, gate open VGRRM Maximum (peak) repetitive
current Vo dc off-state voltage reverse gate vortage
ITM(pulse) maximum (peak) pulse Vo instantaneous off-state voltage VGT dc gate trigger voltage
on-state current VOM maximum (peak) dc off- VR dc reverse voltage
IT(RM5) rms on-state current state voltage VRROM maximum (peak) (repetitive)
ITRXM maximum (peak) (repetitive) VOROM maximum (peak) (repetitive) reverse voltage, gate open
on-state current, specified off-state voltage, gate open VRRXM maximum (peak) (repetitive)
operating circuit VORXM maximum (peak) (repetitive) voltage, specified circuit
IT5M maximum (peak) surge (non- off-state voltage, specified cir- between gate and cathode
repetitive) on-state current cuit between gate and cathode maximum (peak) (nonrepeti-
VRSOM
ITXM maximum (peak) on-state cur- VOSOM maximum (peak) (nonrepetitive)reverse voltage, gate open
rent, specified operating circuit tive) off-state voltage, gate maximum (peak) (nonrepeti-
VRSXM
Po device dissipation open tive) reverse voltage, specified
PO(AV} average device dissipation VOSXM maximum (peak) (nonrepeti- circuit between gate and
PG(AV) average gate power dissipation tive) off-state voltage, speci- cathode
PGM maximum (peak) gate power fied circuit between gate VRX dc reverse voltage, specified
dissipation and cathode circuit between gate and
PGRM maximum (peak) reverse gate vOX instantaneous off-state vol- cathode
power tage, specified circuit be- VRXM maximum (peak) reverse
PT on-state power dissipation tween gate and cathode voltage, specified circuit
PT(AV) average on-state power VOX dc off-state voltage, specified between gate and cathode
dissipation circuit between gate and vT instantaneous on-state voltage
~ delay time cathode VT dc on-state voltage
tf fall time vF instantaneous forward voltage VT(I) initial on-state voltage
tg(rec} gate recovery time drop VTM maximum (peak) dc on-state
tgt gate controlled tu rn-on ti me VFM maximum (peak) forward voltage
(td + t r ) voltage ZGS gate source impedance
______________________________________________________________________ 55
56 ________________________-------------------------------------
Power Transistors - JEDEC Types
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _- - - 5 7
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,
2N240S,2N30S3,2N30S3A,40366,40389,40392
Low-Power Silicon N-P-N Planar Transistors
For Small-Signal Applications In Industrial and Commercial Features:
Equipment • Planar conllrucllon for low nolle and
low leakage
These RCA types are silicon n-p-n planar replacement for the 2N1893. All of these • Low ouipul capacllimce
transistors intended for a variety of small- devices except the 40389 and 40392 are • Low lalurallon voila gel
signal and medium-power applications. supplied in the JEDEC TO-39 hermetic
They feature exceptionally high collect- package. The 40389 is a 2N3053 with a Additional Features for 40366:
or-to-emitter sustaining voltages, low factory-attached heat radiator and the • High reliability aSlured by live pre-
leakage characteristics, high switching 40392 is· a 2N3053 with a factory-at- condllloning sleps
speeds, and high pulse beta (hFE). tached diamond-shaped mounting • Group Alesi dala Included In dala
RCA-2N2102 is a direct replacement for flange. sheet.
the 2N1613. RCA-2N2405 is a direct
TERMINAL DESIGNATIONS
2N3053
2N2102 2N161j 40389
,f3".~
2N6972N699 40366 2N1711 2N1893 2N2270 2N2405 403922N3053A
VCBO 60 120 120 75 120 60 120 60 80 V
Sl.CS-2.1512
VCER(sUS) 80 80 50 100 60 140 50 70 V
RBES100 JEDEC TO-39
VCEV lsusl 120 120 60 80 V (See dlmenolonal outline "C".)
vCEOlsus) 65 80 45 90 40 60 V
VEBO I 5 V
B C
IC 0.5 0.5 0.7 0.7 A
~ANGE)
PT
~
TOS 25'0 2 5 5- W
free-airS 25'00.6 0.6 0.8 0.8 1 1· w
TC>25°C Derate linearly to maximum temperature
9ZCS-27511
T.tg , T J -65 to +175 -65 to 200 °c JEDEC TO-39 with Flange

40392
°c (See dlmenolonal outline "E".)
TL 255 230 300 300 255 230 255 235 235
At distance from seating plane for 10 s max. HEAT
~
;;>1/16 in. 11.58 mml .. c RAD:TOR
* 2N-Series types in accordance with JEDEC registration data

-7 for 40392. .3.5 for 40389
00 0
MOUNTING
2
B o 0 TABS
E
JEDEC TO-39 with Heat Radiator

40389
(See dlmenolonal outline "0".)
J COll.fCTQIt-lO-EllTTVt VOLTaGE: (VCE'-IOV
S'
:
.0
I ~~11J
~~
I'
~Yf.
u 00
I~ -::v-r
8
K
-0'
..,.
'" 0
COt..LECTOR CURftENT IIcI-.A
10 10 1000 , 10
COLLECTOR MILLIAMPERES
100
tIcl
Fig. 1· Typical dc beta characteristics Fig. 2· Typical de beta characteristics Fig. 3 - Typical de beta characteristics
for 2N699, 2N1613, 2N2102, for 2Nl711. for 2N1893, 2N2405.
2N2270.
58 ______________________________________________________________________
________________________________________________________ POWERTRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2i02, 2N2270,
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392
ELECTRICAL CHARACTERISTICS,At Case Temperature (TC) = 2SOC unless otherwise specified
TEST CONDITIONS LIMITS

CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N21 02
Vde mAde 2N697 2N699 2N1613 40366 2N1711 UNITS
VCB VCE IC IB MIN. TYP. MAX. MIN. MAX. MIN . MAX. MIN • MAX. MIN . MAX.
• Collector Cutoff Current: 30 - 0.Q1 1 - - - - - - - -
With eminer open
ICBO
60 - - - - 0.05 - 0.01 - ~.002 - 0.01 jJA
At TC = 150"C 60 - - - - - - 10 - 2 - 10
.. Emitter Cutoff Current:
VES 5 V 0
lEBO 0 - - - - 0.05 - 0.01 - p.002 - p.005 /J.A
10 0.01 - - - - - - - 10 - 20 -
10 0.1 - - - - - 20 - 20 - 35 -
• DC Forward-Current Transfer Ratio hFE 10 10· - - - - - 35 - 35 - 75 -
10 1500 40 - 120 40 120 40 120 40 120 100 300
10 5000 .- - - - - 20 - 25 - 40 -
At TC '" -5SoC 10 10· - - - - - 20 - 20 - 35 -
, alleetor-ta-Emltter
Reachthrough Voltage: VRT - - - - - - - 120 - 75 - V
Ves= 1.5V,IE=0
Follector-to-Base
Breakdown Voltage: VIBRICBO 0.1 60 75 - 120 - 75 - 120 - 75 - V
With emitter open
• Emitter-ta-Base
Breakdown Voltage: VIBRIESO 0 5 7.5 - - - 7 - 7 - 7 - V
IE=O.1 mA
.. Collector-ta-Emitter
Sustaining Voltage: VCEOlsu.1 100· 0 - - - - - - - 65 - - - V
With base open
With external base-to-emitter
resistance (RBE)::# 10 n. VCERI.u.1 100· 40 60 - 80 - 50 - 80 - 50 - V
.. Base-to-Emitter Saturation
Voltage VBEIs.tl 1500 15 - 1 1.3 - 1.3 - 1.3 - 1.1 - 1.3 V
.. Collector-ta-Emitter Saturation
Voltage VCEI •• tI 1500 15 - 0.7 1.5 - 5 - 1.5 - 0.5 - 1.5 V
.. Common-Emitter, Small·Signal,
Forward-Current Transfer Ratio
5 1 - - - 35 100 30 100 30 100 50 200
11-1 kHzl
hie 10 5 - - - 45 - 35 150 35 150
, 70 300
Magnitude of Common-Emitter,
Small-Signal, Forward Current Ihl.1 10 50 2.5 5 - 2.5 - 3 - 3 - 3.5 -
Transfer Ratio (t = 20 MHz)
111 Input Resistance: 5 1 - - - 20 30 24 34 24 34 24 34
n
I -1 kHz
hib
10 5 - - - - 10 4 8 4 8 4 8
• Small-Signal Reverse Voltage
Transfer ~F~edback) Ratio: h,b
5
10
1
1
.
-
-
-
-
-
-
-
-
3 x 10-4
-
-
-
3x 10
3.10
-
-
3 x 10.4
-
-
-
5.10-4
-
1=1 kHz 10 5 - - - - 3x 10'" - - - 3 x 10-4 - 5.10-4
• Output Conductance:
hob
5 1 - - - 0.05 0.5 0.05 0.5 0.01 0.5 0.05 0.5
jlmho
1'1 kHz 10 5 - - - - 1 0.05 0.5 0.Q1 1 0.05 0.5
• Output Capacitance:
IE = 0
Cob 10 - 20 35 - 20 - 25 - 15 - 25 pF
• Input Capacitance:
VES = 0.5 V
Cib 0 - - - - - - 80 - 80 - BO pF
Gain-Bandwidth Product 'T 50 100 - 50 - 60 - 60 - 70 - MHz

• Noise Figure:
Circuit Bandwidth ~BW) = 1 Hz
Reference signal freq. '" 1 kHz \
Generator resistance (AGI '" NF 10 0.3 dB
510.12 12N1613, 2N17111 - - -- - - - ·12 - - - 8
1 Kn 12N21021 - - - - - - - - 6 - -
• Saturated Switching Time lci+tr+tf - - - - - - 30 - 30 - - f/s
Thennal Resistance:
Junction-to-case R8Jr! - - 75 - 75' - 58.3' - 35' - 58.3'
°c/w
Junction-to-ambient R8JA - - 250 - 250' - 219' - 175' - 219'
*2N-Serles types in accordance with JEDEC registration data -

a Pulsed, pulse duration'" 300 IJS. duty factor - 2% ~1 B% for 2N2102 only).
___________________________________________________________________ 59
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,
2N2405,2N3053, 2N3053A,40366, 40389, 40392
ELECTRICAL CHARACTERISTICS. A t Case Temperature (TcJ =2fiOC unless otherwise specified.
2N3053
SYMBOL VOLTAGE CURRENT 2N1893 2N2405 2N2270 40389 2N30&3A UNITS
Vde iliA de 40392
VCB VCE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. ~AX.
15 - - - - - - - - - -
ICBO 30 - - - - - - - 0.25 - - IJA
60 - - - - 0.05 - - - -
90 - 0,01 - 0,01 - - - - - -
Tc=150·C 60 - - - - - 50 - - - -
90 - 15 - 10 - - - - - -
lEBO 0 - 0,01 - 0.01 - 0.1 - 0.25 - 0.25 IJA
VEB=SV -
10 0.1 - - 20 - -- - - - - -
10 1 - - - - 30 - - - - -
hFE 10 loa 35 - 35 - - - - - - -
10 150a 40 120 60 200 50 200 50 250 50 250
Tc=SS·C 10 loa 20 - 20 - - - - - - -
· VIBR)CBO 0.1 120 - 120 - 60 - 60 - 80 - V
· VIBR)EBO
I E=O.lmA
0 7 - 7 - 7 - 5 - 5 - V
· VCEOlsus) 1008
30a
0
0
-
80
-
-
90
90
-
-
45
-
-
-
40
-
-
-
60
-
-
- V
VCERlsus)
• RBE=10 {l 1008 100 - 140 - 60 - 50 - 70 - V
=SOO (l l00a - - 120 - - - - - - -
- - V
· VBElsat)
1508
508
15
5
-
-
1.3
0.9
-
-
1.1
0.9 -
1.2
- -
1.7
-
0.6
-
1
-
· VCElsat)
150a
508
15
5
-
-
5
1.3
-
-
0.5
0.2
-
--
0.9
-
-
-
1.4
-
-
-
0.3
-
V
2.5 150 - - - - - - -- 1.7 - 1

V
VBE 10 1508 - - - - - - - - -
·=
• f
hie
1 kHz 5 1 30 100 - - - - - - - -
·· = =
1 kHz
1 kHz
5
10
5
5
-
45
-
- -
50 275
--
5
5
-
275
-
-
-
-
-
-
-
-
· = 20 MHz
5
10 50
1
2.5
20
-
30
6
24
-
34 -
5' -
- -
5' -
- -
5 -
-
· hib n
- - - -
f=1 kHz 10 5
" 8 4 8 - -
'2N-Series type in accordance with JEDEC registration data.

aPulsed; pulse duration = 300 I'S. duty factor:s; 2%.
-VEB=4V for 2N30S3. 2N30S3A
60 ______________________________________________________________________
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405,2N3053,2N3053A,40366, 40389, 40392
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C unless otherwise specified. (cant'd)

2N3053
SYMBOL VOLTAGE CURRENT 2N1893 2N2405 2N2270 40389 2N3053A UNITS
V dc mAde 40392
VCB VCE Ie IB MIN. MAX. MIN. MAX. ~IN. MAX. MIN. MAX. MIN. IMAX.
5 1 - 1.25 x - 3 x 10-4 - - - - - -
10.4
hrb 10 5 - 1.25 x - 3 x 10-4 - - - - - -

f=lkHZ 10-4
5 1 - 0.5 - 0.5 - - - - - - }Jmho

hob
10 5 - 0.5 - 0.5 - - - - - -
f=lkHz
Cob 10 - 15 - 15 - 15 - 15 - 15 pF
IE=O
Cib 0 - 85 - 85 - 80 - 80 - 80 pF
VEB-0.5V
fT 50 - 120 - 100 - 100 - 100 - MHz
NF .... 10 0.3 - - - 6 - 10' - - - - dB
* Id+1r+tj - - - - - 30 - - - - 1/s
ROJC - 58.3 - 35 - 35 - 35- - 35 °C/W
ROJA - 219 - 175 - 175 - 175- - 175
*2N-Series types in accordance with JEDEC registration data. aPulsed; pulse duration=300 !'s, duty factor:;:; 2% .
....aW=l Hz, reference signal freq.=1 kHz, RG=500 n (2N2405) and RG=1 kfl (2N2270).
-25 max. for 40392. _ 50 max. for 40389.
COLLECTOR-TO-EMITTER VOLTAGE(VcEJ"'OV
q
e
I
u
H
...
Z
I:'
\oJ
a:
a:
::>
~ 100
~ 8
...J 10 4 6 102
...J
o
U
COLLECTOR CURRENT IIc1-mA
Fig. 5 - Typical de beta characteristics for

2N3053, 2N3053A, 40389, 40392.
4 6 8 10 2 4 6 8 100
COLLECTOR-TO- EMITTE.R VOLTAGE (VCE-V
92CS-15736RI
Fig. 4 - Maximum operating areas for 2N2405.
______________________________________________________________________ 61
POWER TRANSisTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,
2N2405, 2N3053, 2N3053A,40366, 40389, 40392
<{
I
'0
H
I-
z
w Fig. 1- Typical transfer characteristics
IX:
IX: for 2N1613, 2N1..711, 2N1893,
::;)
t.> 2N2102,2N2405.
IX:
o
l-
t.>
W
..J
..J
ot.>
2 4 6 8 10 2 4 6 8 100 2
COLLECTOR,..TO-EMITTER VOLTAGE (VCE)-V
92CS-27989 Fig. 8 - Typical transfer characteristics for
Fig. 6 - Maximum operating areas for 2N3053 and 2N3053A. 2N3053, 2N3053A 40389, 40392.
~u
·
'000 fJttt-AlR TEIllPERAT\M IfF""
1-1-
?~ ..-P !~-ra
;....~
2'-
I
2
I- r-
f / ~..- f- -~
·.
~ 1O,!
,
~ '.0 I-
I r- '00
,1\ "'-
~ 10 "- '70
, 0
g '.0
·, OAIN- BANDWIDTH PRODUCT IT (Mc)aIOO
I
0 10
I 0 '0
I I 20 50 40 so eo 10
BASE-TO-EMITTER VOLTAG((VSEI- II
COt.l.ECTOR-TO-EMITTtR VOlTS IIIC£I COl,L[CTOR-TO-[MITTIUI: VQ..TAO[ (Vcr)-v .KI-4Z»Ml
Fig. 10· Typical gain bandwidth product Fig. 11 . Tvpical gain bandwidth product (f T )
Fig. 9· Typical input characteristics for (f T ) for 2NI711, 2NI893,2N2405. for 2N699, 2N1613, 2N2102, 2N2270,
2N3053, 2N3053A, 40389, 40392. 2N3053, 2N3053A 40389, 40392.
ttt· I
10 EMITTER OPEN
·
L..'..!..~
COLLECTOR CURRENT (IC'"O
EMITTER CURRENT (IEloO
FREE-AIR TEMPERATlIREITfAloZ5" C I ~
, .!. ..
,F~MITTER-TRANSITION CAPACITANCE ~~ 1.,....,ERES
~~
FOR V COLLECTOR Mlll.1AMPEflE
·
.. MIL
~ r-r-
I
~ ,
r-- ;1: I-.~o
~
i
•I
~ 10
·
,
·
r---.
OUTPUT CAPACITANCE FOR Yca
~ ~
tid
~>
g
4
~i ' Ie-'!o
!o
- h~
~
II II ··-.
0.1
,
I
, . ,I I.-r
,I.I
-Kl
, ., .-100
-50 0 100
JUNCTION TEMI'ERATURE (TJI-"C
-ou - 0 so 100
". 'so
WCSIIU2
I
Fig. 13 - Typical collector-cutoff curr;~St

REVERSE-BIAS vOLTS (VBE OR Veal
Fig. 14 - Typical collector-to-emitter saturation
Fig. 12 - Typical capacitance characteristics characteristics for 2N699, 2N 1893, characteristics for 2N 1893, 2N2405.
for all types. 2N2405.
62 ________________________________________________________________________
POWER TRANSISTORS
2N697, 2N699, 2N1 ~13, 2N1711, 2N1893, 2N21 02, 2N2270,
2N240S, 2N30S3, 2N30S3A, 40366, 40389, 40392
.
,~
I I I I
nFn
I
" ,I, L
~
JeES 1)_\000
,l,
II ('en!.
.00
LECTOR MlLUAtWEA BASE "'Ll..lAMPERES 11al- 100
~ ·············til""'· : ....... .
..
00
~ ,I'~ , .;;; pi r::.. ... til f+I-+·c"-l-;;····+-'-1'4-+-'1
~
'0 .,. 1.1.;. 4 1.1 I .•.
.
~
~ •
~
, ~ 'sP'L 'iiij~. .=----F
8 ' 1 \ ~II\ .... .•.
0.'
-TO
-'" -" , , , B.sE CURRtNT'",;"O' •••• •••• I.
0
" '" " '00
COLLECTOR-fO-EMlTTER VOLTAGE IVCEI-V ncs-II"5R'
10 20 30 040 !W
COLLECTOR-TO-EMITTER VOLTS ('ICE)
Fig. 15· Typical base-to-emitter saturation Fig. 16 - Typical/ow-current output character-

Fig. 17 - Typical low-current output character-
characteristics for 2N1893, 2N2405. istics for 2N699, 2N1613, 2N2102,
istics for 2NI711.
2N2270.
'00 2 4 6 e 10
COLLECTOR-lO-EMITTER VOLTS {VCEl COLLECTOR-TO-EMITTER 'IOLTS ('ICE)
COLLECTOR-lO-EMITTER VOLTS (VCEl
Fig. 18 - Typical/ow-current output Fig. 19 - Typical/ow-current output Fig. 20 - Typical high-current output
characteristics for 2N 1893. characteristics for 2N2405. characteristics for 2N699,
2N2270.
+'
• • .•. . .
AMBIENT TEMPERATURE (TAl, 25·C:::: .•.. COMMON EMITTER CIRCUIT, BASE INPUT.
FREE-AIR TEMPERATURE (T"A).2:5 6 C
~·~~_II·;··II::'
b.~. ·. ···k"it:;;: ••' ! · V
,
ASE MILLIAMP Ris
0.5 I 1.5 2 2.5 3
COLLECTOR-TO-EMITTER VOLTS (VeE)
Fig. 21 - Typical high-current output Fig. 22 - Typical high-current output Fig. 23 - Typical high-current output
characteristics for 2N1613, characteristics for 2NI711. characteristics for 2N1893.
2N21 02.
COllECTOA·TO·EMITTE" WLTAGE (VCEI-V

COLlfCTOR-To-rMTTER VOl.TS (VCEI
Fig. 24 - Typical high-current output Fig. 25 - Typical high-current output charac-

characteristics for 2N2405. teristics lor 2N3053, 2N3053A,
________________________________________________________________________ 63
POWER TRANSISTORS .._ _ _,--_ _ _~_ _ _ _ _ _ _ _ _ _ _ _ _ _- _ _ . . - - - - - - - -
2N1479-2N.1482,2N1700, 40347, 40348, 40367

Hometaxial·Base Silicon N·P·N Power Transistors
Features:
General-Purpose Types for Low-Power Applications • High-temperature characterization
These RCA types ~re hometaxial-base, pulse-amplifier circuits; and as class A • High dc beta at 200 mA
silicon n-p-n power transistors intended and class B push-pull audio and servo • Fuli sWitching-time characterization at
for a wide variety of applications in in- amplifiers. 200mA
dustrial and military equipment. They are Additional features for 40367:
• High realiability assured by five
panicularly useful in power-switching cir- The 2N1700 and 40367 are supplied in
preconditioning steps
cuits such as in dc-to-dc conveners, in- the hermetic JEDEC T0-39 package or
• Group. A test data in data' bulletin
veners, choppers, solenoid and relay TO-39 with factory-attached heat radia-
controls; in oscillator, regulator, and tor.
2N1479 2N1480 40347 40348

Maximum Ratinils,Absolute-Max;mum Values: 2N1481 2N1482 2N1700 40347V1 40348V1 40367
·COLLECTOR-TO-BASE VOLTAGE •.••••.•••.• '. VCBO 60 100 60 60 90 100 V
• COLLECTOR-TO-EMITTER VOLTAGE:
. With ba.. opi,n. sustaining . . . . . . . . . . . . . . . . . . . VCEOlsusl 40 55 40 40 65 55 V
With emltter-to-baie noverse· biased .
IVEB-j.6voltsl ••.•••••.•• , ••••.•.•• VCEV 60 100 60 60 90 100 V
• EMITTER-TO-BASE VOLTAGE •••••.••••••..• VEBO 12 12 6 7 12 V
• COLLECTOR CURRENT •.•.•••••.•••.••••• IC 1.5 1.5 1.5 1.5 1.6 A
PEAK COLLECTOR CURRENT •••.••••..••••• ICM 3.0 3.0 - A
• EMITTER·CURRENT .••••••••••••• : ........ IE -1.75 -1.75 - A
• BASE CURRENT .•••.•••.••••••.•••.••.. IB 1 0.75 0.5 0.5 1A
• TRANSISTOR DISSIPATION: PT
At case temperature of 2SoC '.' . . . . ' . . . . . . . . . . 5 5 5 8.75 8.75 5W
1403471 1403481
At ambient temperature up to 25°C .•.••••.•••. 1.0 1.0
1403471 1403481
4.4 -4.4 lW
140347Vll 140348Vll
• TEMPERATURE RANGE:
Operating and Storage _ _ . _ _ _ • . • , • • • . .. _ • • • • TC.Tstg -65 to 200 , °c
• LEAD TEMPeRATURE lOuring solderingl:

At dlstencos ;;'1/32 in 10.8 mml from ..ating plane
for 10smax . ...................... . TL 255 230 230 255°C
*2N-5erlestypes in accordance with JEDEC registration data
COLLECTOR-lO-EMITTER VOLTAG~ 1~<;E;1~4~ ~~ t..::
JEDEC To-39
2N1419-2N14B2,2N1100.
40341-40348~403&7
(S .. d'mon._' oulU". "(;'".,
02,,' """ ..••. :G:I,·~IE:~~:I!i:; . _j

0.5 I I. L_ ., "" ,~X'F'm·t}!
BASE-TO-EMITTER VOLTAGEIVSEI-V.
° 20
COL.L.ECTOR-TO·EMITTER VOL.TAGE(VCEI-V ~2C'" ,.... 4~.~
JEDEC TG-39 with H..t

Fig•. 7 - Typical Input chsl'Bcteristics for Fig_ 2 - Typical output characteriatics for Rldiator
2N7479-2N7482_ 2N7479-2N7482. 40347V1.40348Vl
(8N "'meMlo,.' oulll". "D"_)
64 ______________________________________________________________________ ~
2N1479-2N1482,2N1700,40347,40348,40367
.
ElECTR ICAl CHARACTERISTICS A t Case Temperature (TC) =25°C unless otherwise specified
TEST CONDITIONS liM TS
VOLTAGE CURRENT
SYMBOL Vde mAde 2N1479 2N1480 2N1481 2N1482 2N1700 40367 UNITS
VCB VCE VEB IC IB IE MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN . MAX.
ICBO 30 0 10 10 10 10 75 4 IJA
TC = 150°C 30 0 - 500 - 500 - 500 - 500 - 1000 - -
· lEBO 12
6
0
0
-
-
10
-
-
-
10
-
-
-
10
-
-
-
10
-
-
-
-
25
-
- -
2 IJA
·
VCEV 1.5 0025 60 - 100 - 60 - 100 - - - 100 - V
1.5 005 - - - - - - - - 60 - - -
VCEO(sus) 50 0 40 - 55 - 40 - 55 - - - 55 _.
· VBE 4
4
200
100
-
- -
3 -
-
3
-
-
- -
3 -
- -
3 -
-
-
2
-
- -
3 V
VCE(sad 200 10 - - - - - - - - - - - 1.4 V

· hFE 4
4
200
100 -
20 60
-
20
-
60
-
35
-
100
-
35
-
100
-
-
20
-
80
35
-
100
-
hfe 4 5 50 Typo" 50 typo" 50 Typo" 50 Typo" 40 Typo - -
· rCE(sad 200 20 - 7 - 7 - - - - - - - - n
200 10 - - - - - - 7 - 7 - - - -
100 10 - - - - - - - - - - 10 - -
Cob 40 150 Typo" 150 Typo" 150 Typo" 150 Typo" 150 Typ. - - pF
71 10 Typo" 10Typo" 10 Typo" 10 Typo" 10Typ. - - ms
f",b 28 5 loS Typo" loS Typo" 105 Typo" loS Typo" 105 Typ. .- - MHz
td· 002 Typo" 002 Typo" 002 Typo" 002 Typo" 002 Typo - -
t r•
1 Typo" 1 Typo" 1 Typo" 1 Typo" .1 Typo - -
ts·
1--''-'
006 Typo" 006 Typo" 006 Typo" 006 Typo" 006 Typo - -
tf· 1 Typo" 1 Typo" 1 Typo" 1 Typo" 1 Typo - -
ROJC 35 35 35 35 35 - 35
ROJFA 200 200 200 200 200 - -
"2NoSeries types in accordance with JEDEC registration datao
.IC = 200 rnA, IBI = 20 rnA, IB2 = -850 rnA
1111
'00 I U1
\.\,:'\~" .....
lOr-- ~\.".':\)~
I
, "'
.
VCE '4Vj
<J'>' ,~c
bfl i
~~
".-
. ".- ., ,S~~
VeE'IV ,.
"
COlLECTOR CURRENT (lcl-A
COl.LECTOR CURRENT (Ic)-A
•• 1 ..
, , I.. , , "
I
COLLECTOR CURRENT flCI-IiA

, ," ,
'00
II .I" '000
Fig. 3 - Typical dc beta characteristics for FigA-'rypicaJ dc beta characteristics Fig.5-TypicaJ dc beta characteristics
2N1479-2NI482. for2N1700. for 403470
_________________________________________________________________________ 65
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347, 40348, 40367

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C unless otherwise specified

CHARACTERISTIC SYMBOL VOLTAGE CURRENT UNITS
Vdc Adc 40347 40348
VCE VBE IC IB MIN. MAX. MIN. MAX.
Coliector·Cutoff Current
wi th external base-to- 30 - 1 - -
emitter resistance ICER 60 - - - 1 p.A
(RBE) = 1 kn 90 - - - -
30 - 1 - -
With RBE = 1 kn ICER 60 - - - 1 mA
and TC = 150°C 90 - - - -
Emitter-Cutoff Current lEBO -7 - 10 - 10 p.A
4 0.15 - - - -
DC Forward-Current 4 0.30 - - 30 125
Transfer Ratio hFE 4 0.45 25 100 - -
4 1.00 - - 10 -
Co II ecto r-to·Emitter
Sustaining Voltage:
With base-emitter junction VCEV(SUS) -1.5 0.050 60 - 90 - V
reverse biased
With base open VCEO(sUS) 0.050 40 - 65 - V
4 0.15 - - - -
Base-to-Emitter Voltage VBE 4 0.30 - - - 1.3 V
4 0.45 - 1.5 - -
Collect or -to-Emit ter 0.15 15mA - - - -
Saturation Voltage VCE(sat) 0.30 30mA - - - 0.75 V
0.45 45mA - 1 - -
Forward-Bias Second Break- 38 345 - - -
down Collector Current ISlb 63 - - 208 - mA
l1-s non-repetitive pulse) 138 - - - -
Thermal Resistance:
Junction-to-Case 20(max.) 20(max.) °C/W
R6JC
40347 40348
Thermal Resistance: 40Imax.) 40(max.)

Junction-to-Ambient R6JA 40347Vl 40348Vl °C/W
a Pulsed; pulse duration = 300 (.Js, duty factor ';;;2%.
COLLECTOR CURRElH0C)/BASECURRENT (IB)" (0

CASE TEMPERATURE (lCl" 2~oC
COLLECTOR- TO-EMITTER VOLTAGE (VCE): lOY
CASETEMPERA1URE(TC)'ZsOC
H-f-+--+-f--H
I.'" / "'I--+-++++~I--++++--I-~H-H
800
_I L
1
~ 600
~~/
§ 0/
::400 /
e
~
8 200
V
/ 0.1 0.8
10 I 6 '102
Co!'L~CH)R·T().EMITTER SATURATION VOLTAGE, VCE{SAT)--V "",0-,..-,
COLLECTOR CURRENT (IC)-JlA
Fig_6- Typical de beta characteristics for Fig. 7- Typical saturation charac- Fig. 8- Typical gain-bandwidth product vs.
40348. teristics for 40347 and 40348. col/ector current for 40347 and
40348.
66 ________________________________________________________________________
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347, 40348, 40367
60
COLLECTOR-TO-EMITTER VOLTAGE (VeEI-V
Fig. 10- Tvpical output characteristics for 2N1700.
10 40
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
92SS-3586R2
Fig.9-Maximum operating areas for 40347. and 40348.
CASE TUPERATURE(TC\: 150C COLLECTOR-TO-EMITTER VOLTAGE (VeE) -4V

CASE TEMPERATlJRE(TC\: 250(;
BASECUHRENT(lB11IIIIA
~ 60
I
10
1.0 JO 5.0
'0 1.0 J.O 50 '.0
COLLECTOR·TO-[lIlTTERVOLTAGE(VCE)_~ COLLEqOR·TO-EMITTER VOLTAGE (VCEI-V
Fig. 11- Typical output characteristics for 0.5 I 1.5

Fig. 12- Typical output characteristics for BASE - TO -EMITTER VOLTAGE (I'B~-V
40347. 40348. 92CS-II!iG9RI
Fig. 13 - Tvpical input characteristics for

2N1700.
CASE TEMPERATURE [TClaZ5"C
COLlfCTOR·TO-EMITTERVQLTAC[(VCE)· 4'0' COLl[CIOR-TO EMITHRvOLTAGE (VCEi ,tv INDUCTANCE (1.1a15mH
<l 08 BASE-EMITTER RESISTANCE(RSE1"IOO Il
I
< '00
~
'" < '00
~
1 i
g
~ 300 ~
--f--f--
,41/
/1 f~
agzoo 2]</'(:
~ 200
j1~~1
MIMIMUM
g 100 ~
r--. ,,'#/
~'/
~
8 )00
!( Y Q.4 0.6
O' 1.0 1.2 U 11 BASE-lO-EMITTER VOL!AGEIVSE1-V
BASE-TO· EMITTER VOLTAGE (VeE)-V BASE-TO EMITTER VOLTAGE (VSE1-v Fig. 16 - Reverse·bias second-breakdown
Fig. 14- Typical transfer characteristics for Fig. 15- Typical transfer characteristics for characteristics for 40347 and
40347. 40348. 40348.
----------------------------------------------------------____________ 67
POWERTRANSISTORS __________________________________________________________
2N1479-2N1482, 2N1700, 40347, 40348,40367

!(l- 6 COLLECTO"i-TO-EMITTER VOLTAGE (\lC[I.6OV
<I ; BASE-lO-EMITTER RESISTANCE (RBEI-IDoon
.!. IO-~~
~
~
:,
I-IO-!e
i !
~ 10"S:
~
y 10-'
:
~
~
:,
j 10- 9 15
8 ~
10-.0 2
·'00
CASE TEMPERATURE lTC)-~ "'" CASE TEMPERATURE (Tc)-'C
Fig. 17-Collector-cutoff-current characteristic Fig. 18-Collector-cutoff-current characteristic Fig. 19 - Tvpicalleakage characteristics for
for 40347. for 40348. 2NI479-2NI482.
~ 100 I!K)
JUNCTION TEMPERATURE _·c
Fig. 20 - Tvpicalleakage characteristics

for2N1700.
68 _________________________________________________________________
__________________________________________________________ POWERTRANSISTORS
2N1487-2N1490,2N1702
Hometaxial-Base Silicon N-P-N Power Transistors

General-Purpose Types for High-Power Applications Features:
These RCA types are hometaxial-base regulator, and pulse-amplifier circuits; • High-temperature characterization
power transistors of the silicon n-p-n and as class·A and class-B push·pull • High dc beta at 1.5A
type intended for a wide variety of ap- audio and servo amplifiers. • Full switching-time characterization
plications in industrial and military equip- These transistors feature high power· at l.5A
ment. They are particularly useful in dissipation ratings, high beta at high
power-switching circuits such as in dc-to- current, and excellent high - temper·
dc converters, inverters, choppers, sole- ature performance. They are supplied in
noid and relay controls; in oscillator, the JEDEC TO-3 hermetic package.
2Nl487 2Nl488
Maximum Ratings, Absolute-Maximum Values: 2N1702
2Nl489 2N1490
• COLLECTOR-TO-BASE VOLTAGE . . . VCBO 60 100 60 V
• COLLECTOR-TO-EMITTER VOLTAGE,
With base open (sustaining voltage) .. VCEO(SUs) 40 55 40 V TERMINAL DESIGNATIONS
With eminer-to-ba5e reverse
'0
V C
biased (VEe) = 1.5 voltsl. . . . VCEV 60 100 60
• EMITTER-TO·BASE VOLTAGE. 10 10 V
VEBO
.. COLLECTOR CURRENT . . . IC 6 6 A
• EMITTER CURRENT. IE -B -8 A
• BASE CURRENT • . . . . . . . . . • . . IB 2.5 A
• TRANSISTOR OISSIPATION, PT
At mounting·flange temperature of 25°C 75 75 75 W
At mounting-flange temperature of 100°C. 43 43 W
JEDEC TO·J
• TEMPERATURE RANGE,
(See dimensional oulllne "A".) .
Operating and Storege . . . Te. Tstg -65 to 200 ·c
PIN TEMPERATURE (During soldering):
At distance ~ 1/32 in. (0.79 mml
from seating plane for 10 s max . . . . TL 235 ·c
2" COhHON-EMITTER CIRCUIT, BASE INPUT

MOUNTING-fLANGE TEMPERATURE-25-C
V..M-IIOLTAGE AT WHICH ALPHA ("d AT
LOW VOLTAGE X THE MULTIPLICATION
'" 1>0 fACTOR (M)-I
100
BASE MILLIAMPERES-n
"
60
COLLECTOR-TO-EMITTER VOLTS
Fig. 1 - Typical dc beta characteristics for Fig_ 2 - Typical dc beta characteristics for Fig. 3 - Typical output characteristics for
2NI487-2NI490. 2N1702. 2NI487-2NI490.
COLLECTOR-TO-EMITTER VOLTAGE (VCE'-4V
""'H<>-"'T"'. VOl.T.5 (Vee)

0.' I.'
BASE-TO-EMITTER VOI..TAGE (V~-V
Fig. 4 - Typical input characteristics for Fig. 5 - Typical input characteristics for Fig. 6 - Typical output characteristics for
2N 1487-2N 1490. 2N1702. 2N1702_
_________________________________________________________________________ 69
POWERTRANSISTORS ______________________________________________ ~ ________
2N1487-2N1490,2N1702
ELECTRICAL CHARACTERISTICS Mounting-flange temperature = 25"c unless otherwilllJ specified
'TEST CONDITIONS LIMITS
DC DC DC DC
CoLLEC· EMITTER COLLEC· BASE
CHARACTERISTIC TOR VOLTAGE TOR CURRENT TYPE TVPE TYPE TYPE TYPE UNITS
VOLTAGE CURRENT 2N1487 2N1488 2N1489 2N1490 2N1702
(VOLTS) (VOLTS) (mA) (mA)
Vca VeE VEa IC la MIN. MAX. MIN. MAX. MIN. MAx. MIN. MAX. MIN. MAX.
• 'CBO 30 - 26 - 25 - 25 - 25 - 200 IlA

60 - - - - - - - - - toDD
AtTC=150·C 30 - 1000 - 1000 - 1000 - 1000 - 2000 IlA
• 'EBO 6 0 - - - - - - - - - 100 p.A
'Eao 10 0 - 25 - 25 - 25 - ,25 - - p.A

• VCEX 1.5 0.25 - - - - - - - - - -
1.5 0.5 SO - 100 - SO - 100 - - - V
1.5 1 - - - - - - - - sob -
• VCEO(sus) 100 0 40 - 55 - 40 - 55 - 40b - V
• hFE 4 1500 15 45 15 45 25 75 25 75 - -
4 800 - - - - - - - - 15 so
20 5000 - - - - - - - - 3.5 -
• 'OE(S.I) 1500 300 - 2 - 2 - - - - - -
1500 100 - - - - - 0.S7 - 0.S7 - - Sl
800 80 - - - - - - - - - 4
• VBE 4 1500 - 3,5 - 3.5 - 2.5 - 2.5 - -
4 250 - - - - - - - - - 4 V
20 300 - - - - - - - - - 20.5
• VCE(s·t) 5000 2000 - - - - - - - - - 20 V
• Cob 40 200(WP.l 200(Wp.) 200(typ.) 200(typ.) 200 (typ.) pF
• 1"1 12 (typ.) 12 (typ.) 12 (typ.) 12 (typ.) 12 (typ.) ms
• fab 12 100 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - - MHz
• fhfb S 100 - - - - - 1 - - - 300 1 - kHz
28 0.5 -1 - - - - L- - - 1 (typ.) MHz
r.J- 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.)
,
t- 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) p.s
t,- 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.)
If- 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.)
ROJC 2.33 2.33 - 12•33 - 2.33 - 12.33 CIW
• 2N..$eries types in accordance with JEDEC registration data. • Ie - 1.5 A.I S ' - 300 mAo IS2 = -150 mA
00>, COlLECTOR·TO-BASE VOLTAGE (Veal-50 v
t§
t!
· 102
/
i ·
~
·· ....-".J!;
V
I ·,,10
2S $0 7!0 100 12$

..JUNCTION TIEMPEAATURt:-·C
...
~
· 1
'" 100.
.IUNCTION TEMPERATURE (TJ)--C
"0 200
Fig. 7 - Typical collector-cutoff current

characteristic for 2N1487-2Nl490. Fig. 8 - Typical collector-cutoff current
characteristics for 2N1702.
70 ______________________________________________________ ~-----------
POWER TRANSISTORS
2N3054,2N6260,2N6261,40250,40372
Hometaxial-Base, Medium-Power Silicon N-P-N
Transistors Features:
Rugged Devices for Intermediate-Power Applications in
• fT = 800 kHz at 0.2A (2N3054,
Industrial and Commercial Equipment 40372)
These RCA types are hometaxial-base Types 40250Vl and 40372 are the 40250 • Maximum safe-area-of·operation
silicon n-p-n transistors intended for a and 2N3054 with factory-attached heat curves for dc and pulse operation
wide variety of medium- to high-power radiators intended for printed-circuit- • VCEV(SUS) = 90 V min (2N3054,
applications. Types 2N3054, 2N6260, board applications. 2N6261)
2N6261, and 40250 are supplied in • Low saturation voltage: VCE(sat)
the JEDEC TO-66 hermetic package. 1.0 V at IC = 0.5 A (2N3054)
40250 2N6260 2N3054 2N6261
Maximum Ratings, Absolute-Maximum Values: 40250Vl 40372 Applications:
" COLLECTOR-TO-BASE VOLTAGE. VCBO 50 50 90 90 V
COLLECTOR-TO-EMITTER VOLT AG E: • Power switching circuits
With base open VCEO 40 40 55 80 V • Series- and shunt-regulator driver and
output stages
resistance (AaEI = lOOn. ... .....
_ VCER(sUS) 45 60 85 V
With base reverse-biased • High-fidelity amplifiers
(VSE=-1.5V) .. . .......... - VCEV(SUS) 50 50 90 90 V • Solenoid drivers.
• EMITTER-TO-BASE VOLTAGE. VEBO 5 5 7 V
" CONTINUOUS COLLECTOR
CURRENT. . _ ....... IC A TERMINAL DESIGNATIONS
"CONTINUOUS BASE CURRENT. 18 A
" TRANSISTOR DISSIPATION: PT
At case temperature up to 25°C. 29
1402501
29
12N62601
25
12N30541
50
12N62611
W
E0FLA~GE)
At ambient temperatures up to 25°C. 5.8 5.8 W
At temperatures above 25°C.

140250VlI 1403721
- - - - D e r a t e linearly to 200 C - -
o 0
JEDEC TO-66
B ucs-zu" 2N3054, 2N6260. 2N6261, 40250
Storage & Operating (Junction) . -65 to 200 °c
PIN TEMPERATURE (During soldering): (See dimensional oulilne "N".)
At distance ~ 1 132 in. (0,8 mml
from seating plane for 10 s max. 235 °c
·'n accordance with JEDEC registration data format J$-9 ADF-10 12N3054), JS-6 RDF-2 12N6260, 2N6261)
C
f JEDEC TO-66 with HNt Radiator
40250Vl.40372
IHEAT RADIATOR!
(See dimensional oulilne "0".)
CASE: TEMPERTURE (TClm2~·C
~
~~ ::
-u III
II
N6261
i 1
"CEO
~>
~i,70 -4;i I
III _.
'2~.301~4-40372 r-- I
1
V~EO
r JJlU
"eER
~:~60
50
UI III I
N6260
00
"JEO
~ '0
2: 46. , .W~ " . , ... ,I ...
EXTERNAL BASE-TO-EMITTER RESISTANCE (RBEI-
10K
n
lOOK
':I2CS-19~21l RI
10
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V 9255- 3363R2
Fig. 2 - Sustaining voltage vs. base-to-emitter
resistance for 2N3054. 2N6260,
Fig. I-Maximum operating areas for 2N3054 and 2N6260. 2N6261, and 40372.
___________________________________________________________________ 71
POWERTRANSISTORS ________________________________________________________
2N3054, 2N6260, 2N6261, 40250, 40372

ELECTRICAL CHARACTERISTICS, At C. . Temperature (TC) :. 250C unlel$otherwi_lP«ifitJd
CHARACTERISTIC SYMBOL 2N6260 2N3054 2N6261 40260 UNITS
VOLTAGE CURRENT 40372
40250V1
Vdc Adc
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
• Collector.cutoff Current:
With base open leBO
VCB= IE = 0 - - - - - - - 1
30
ICEO 30 0 - 1 - 0.5 - - - -
60 0 - - - - - 0.5 - -
40 -1.5 - 5 - - - - - -
With base-emitter ICEV 80 -1.5 - - - - - 0.5 - - mA
junction reverse-biased 90 -1.5 - - - 1.0 - - - -
ICBO VCB= IE = 0 - - - - - - - 5
30
40 -1.5 - 25 - - - - - -
At TC = 150°C
'CEV 80 -1.5 - - - - - 1.0 - -
90 -1.5 - - - 6.0 - - - -
-5 0 - 5 - - - - - 5 mA
• Emitter·Cutoff Current lEBO -7 0 - - - 1.0 - 0.2 - -
Coliector·to·Base
V(BRICBO
0.05 - - - - - - 50 - V
Breakdown Votlage
Coliector·to·Emitter VIBR)CEV -1.5 0.05 - - - - - - 50 - V
Breakdown Voltage
Collector·to·Emitter
Sustaining Voltage:
With base open VCEO(sus) O.la 0 40 - 55 - 80 - 40 - V
With external base·to-emitter
resistance (RBE) = lOOn VCER(sUS) 0.1" 45 - 60 - B5 - - -
Emi tter-ta-Base
Breakdown Voltage VIBRIEBO - - - - - - 5 - V
IE = O.OOS A
2 4a 3 - - - 5 - - -
2 I.S a - - - - 25 100 - -
• DC Forward·Current hFE 4 3a - - 5 - - - - -
Transfer Ratio 4 0.5" - - 25 150 - - - -
4 1.5a 20 100 - - - - 25 100
• Collector-fa-Emitter VCE!sat) 0.5 a O.OSa - - - 1.0 - - - -
Saturation Voltage 1.sa O.lsa - 1.5 - - - 0.5 - 1.5 V
3a la - - - 6.0 - - - -
2 1.5 - - - - - 1.5 - -
• Base·to·Emitter Voltage VBE 4 1.5 - 2.2 - - - - - 2.2 V
4 0.5 - - - 1.7 - - - -
• Common·Emitter Small·Signal
Short·Circuit. Forward
Current Transfer Ratio fhfe 4 0.1 0.03 - 0.03 - 0.03 - - - MHz
Cutoff Frequency
aPulsed: Pulse duratIon a 300 IAI duty fector • 1.R.
'In 8CCordMc:e with JEDEC r8glltretlon dllte formet JS·9 RDF·l0 (2N30541 J~ RDF·2 (2N8:z60.611
72 ______________________________________________________________________
2N3054, 2N6260,2N6261,40250, 40372

ELECTRICAL CHARADTERISTICS. At Case TemptlratUre (TC) = 25°C unless otherwise spflCifitKI

CHARACTERISTIC SYMBOL 40250 UNITS 2N6260 2N3054 2N6261
VOLTAGE CURRENT 40250V1 40372
Vdc Adc
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
• Magnitude of Common-Emitter.
Small·Signal. Short·Circuit
Forward Current Transfer Ihfel 4 0.1 2 - - - 2 - - -
Ratio If = 0.4 MHz)
• Common·Emitter. Small·
Signal, Short·Circuit hfe 4 0.1 25 25 - 25 - - -
Forward Current
Transfer Ratio (f = 1 kHz)
Forward·Bias Second 40 0.725 - - - - - - -
Breakdown Collector ISlb BO - - - - 0.625 - - - A
Current It . 1 5) 55 - - 0.455 - - - - -
Thermal Resistance: 6 (max.) 7 (max.) 3.5 (max.! 6 (max.)
Junction·to·Case R8JC 2N6260 2N3054 2N6261 40250 °C/W
Junction·to·Ambient R8JA 30 (max.) 30 (max.)
40372 40250Vl
apulsed: Pulse duration = 1.8%.

'In accordance with JEDEC registration data format JS-9 RDF-l0 (2N3054) JS-6 RDF-2 (2N6260-61)
.~
. 1\z·:~.rTl
I I I
, il , TJ ..... lC.200-C
•
~r:~l •I ""\ i""',
I
; l ,
~
- 1\ '\ '><~
\ i\ ~~+.~r<11:
~ LO ~ 10
··l~_' · "-
1\ ,'\., """ '\. ~
,,
E """1'"')- i
:::Q '\
. · ~~
"-, a
~ ~+"'t'", ~ 10
1\
· \\ '" ~"'< rto.--"-

~~,
'\ a \ \
2· " i\
~
i .. \
<~ I-- -
.l~ ~ .1\.. ~, . .~~ . ~.1\.).. .1'<1-. .. ~ . '~ "R

J.
.. 40."
I"
10 10 •• ~
toIUM8ER OF THERMAL CYCLES 10' 10'
HtMRR OF THERMAL CYCLES
Fig. 4 . Thermal-cycling rating chart for

,.. 00'
.. /; 1105 ..
NUMBER Of THERMAL CYCLES
Fig. 5 . Thermal·cycling rating chart for

Ii '106
"
Fig. 3· Thermal-cycling rating chart
for 2N3054. 2N6260. 2N6261.
'V'i"::
'FF'
~
~
t--
IZI-+-+*+l-""=:'f>.,...J.--+-I--l--+-..J.--1-+I
.HF
~ V
1,:...r1':;I:
'.".' ,
I~ ,0h/4--f-H-f--+-H-++-""-~f--I+I
O,8f7/ <-'1--+-+++--+-+-++I-+I""---".f--1-+I
I, f'..
"'" '.I--+--+-++I--.J-..J.--+-I--l--+-+-~
.$ .,
BASE-TQ-EN'HER VOlTAGE (I/BEI-V
Fig. 6· Reverse·bias second·breakdown

·1
~
.. 6 ''o Z
COLLECTOR CURRENT 1Xc1-1IlA
Fig. 7 . Typical gain·bandwidth product

.. 6 t02 2 .. , 103
Fig. 8· Typical input characteristics for

2N3054, 2N6260, 40250, 40250 VI,
..... -
characteristics for all types. for al/ types. and 40372.
________________________________ ~ ____________________________________ 73
POWER TRANSISTORS
2N3054,2N6260,2N6261,40250,40372
10
c
I
U
!:!
~
Z
ILl
It:
It:
::> BASE-TO-EMITTER VOLTAGE (Vael-V
u
It:
0 Fig. 10· Tvpical input characteristics for
~
U 2N6261.
ILl
...J
...J
0
U
0.1
10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V
92CS-19~20
Fig. 9 . Maximum operating areas for 2N6261.
Fig. 11 - Typical output characteristics for

2N3054 and 40372.
' . . . . II!ttIIt.
Fig. 12 - Tvpical output characteristics for Fig. 13 - Tvpical output characteristics for Fig. 14 - Tvpical transfer characteristics for
2N6260. 2N6261. 2N3054, 2N6260; 40250,
40250Vl, and40372
COLt..[CTOA-TO-EMITTER VOLTAGE (VCE }·'-'"
I zoo
:• 10O
.25-
i 120
O'
~ r----
i'I 00 ~"
.[>
~
; 40
\
~
g 0
0.00'
, . . , .,. , ... , .
oor 0.'
COLlECTOR CURRENT (lei-A
Fig. 15· Tvpical transfer characteristics for Fig. 16 - Tvpical input characteristics for Fig. 17 - Tvpical dc beta characteristics for
2N6261. 2N6260, 40250, 40250Vl, 2N626040250, and 40250Vl.
and 40372.
74 ______________________________________________________________________
POWER TRANSISTORS
2N3054, 2N6260, 2N6261, 40250, 40372

COl.LECTOR-TQ-EMITTER VOLTAGE !VCE'o 04'1 COI...L£CTQR-TO-EMITTER VOLTAGE (VCE" 4'1
;1 II -to t lOC
II lo
0
~ 96
III ~~-= 0
~ 80
II \>?--
ill \~.,. 0 .J.r \~.,. 0
~
~
~
" I-~ ..,.<~"<'Y
\'0 ---.;
"
~
~
~
. I-~~~"<'~
I-I,<~'"
T"
~ I-~~ ~~~
~
~ 48
§ ~ 40
0'"4-.
~. B ~ [\\
=. " ;, 20
~ ~
~ 0
0.001
. 0.01 0.1
COLLECTOR CURRENT IICH
~ 0
, . 0.01 01
COLLECTOR CURRENT IICH
.
Fig. 18· Typical dc beta characteristics for Fig. 19 - Typical dc beta characteristics for
2N6261. 2N3054 and 40372.
_________________________________________________________________ 75
POWER TRANSISTORS
2N3055, 2N6569, BDX18, 2N6594, MJ2955
Silicon N-P-N and P-N-P Epitaxial-Base High-Power Transistors

Rugged, Broadly Applicable Devices Features:
For Industrial and Commercial Use
• High dissipation capability
The RCA-2N6594, BDX18 and MJ2955 are • low saturation voltages
(MJ2955) at case temperatures up to 25° C.
epitaxial-base silicon p-n-p transistors featur- They differ in voltage ratings and in the • Maximum safe-area-of-
Ing gain at high current. The RCA-2N6569 currents at which the parameters are con- operation cu rYes
and 2N3055 are epitaxial-base silicon n-p-n trolled. All are supplied in the steel JEDEC • Hermetically sealed JEDEC
transistors. They may be used as complements TO-204MA hermetic package. TO-204MA package
to the 2N6594 and BDX18 or MJ2955, re- The 2N3055 is also available in a home- • High gain at high current
spectively. These devices have a dissipation taxial-base version. To obtain the hometax-
capability of 100 watts (2N6569 and 2N6594), ial-base type order the 2N3055 (Hometaxial). Applications:
115 watts (2N3055, BDX18) and 150 watts • Series and shunt regulators
• High-fidelity amplifiers
• Power-switching circuits
MAXIMUM RATINGS, Absolute·Maximum Values: • Solenoid drivers
N·P·N 2N6569 2N3055 TERMINAL DESIGNATIONS
P·N·P 2N6594· BDX1B·
MJ2955·
* V CBO ' 45 100 V
VCER!susl
RBE" 100 n. 45 70* V
* "'CEO lsus ) 40 60 V
* V EBO 5 V
* IC' 12 15 A
JEDEC TO-204MA
ICM 24 A
(s.. dlmenllonal outline "A".)
* lB' 5 A
* IE' 17 A
* PT
{ 150 IMJ2955) t::::::::c!"~
At TC ';;250 C 100 . 115 IOthers) W
At T C >250C Derate linearly 0.572

{ 0.B6 IMJ2955)
0.66 lOt hers)
W/oC ~ c=t:=
=--cr;-.
~ 100
* T stg • T J 6510200 - - - °c ~ t:::Jf.~. :::. -=:t:::::tti:
a~eo
* TL
~~
+;:;:: tu;:;- ::.-' --
At distance~ 1132 in. (0.8 mm) from seating
~~
plane for lOs max. 235 °c
~
* 2N-types in accordance with JEDEC registration data. 40
• For p-n-p devices, voltage and current values are negative.

; 20
Z~ so 75 100 125 175 200

CASE TEMPERATURE 1TCI-·C
Fig. 1 - Derating c'!rve.
•00
i '~~~--+-+-~--~--+-+-r+-~
;
. .0'
4 • '105 I
NUMIER Of THER.....L CYCLES
. .. 10' 11 10 " 8 10 5
NUMBER OF THERMAL C'I'CL[S
II 10" '" • lOS 2
NUMBER OF THERIIlAL CYCL.ES
4" I 10'
Fig. 2 - Thermal cycling rating chart for

Fig. 3-- Thermal-cycling rating chart for Fig. 4 - Thermal cycling rating chart for
2N6569 and 2N6594.
2N3055 and BDX1B . MJ2955.
76 ______________________________________________________________
----____________________________________________________ POWERTRANSISTORS
2N3055, 2N6569, BDX18, 2N6594, MJ2955
ELECTRICAL CHARACTERISTICS, at Case Temperature IT cI = 2!PC Unless Otherwise Specified -w 36" CASE
COLLECTOR-lO-EMITTER VOLTAGE (VeE'-. v
TEMPERATURE {lei· 25"C
I,
TEST CONDITIONS LIMITS· ~ 30
CHARACTERISTIC
VOLTAGE CURRENT 2N6569 ~~~85+ UNITS
s
~ 240
! ! I I i
V de
VCE VeE Ic
Ade 2N6594+
Ie MIN. MAX. MIN. MAX.
MJ2955+
~
I- 180 ' / ~,
- -
z V I
I
,
45 -1.5 1 -
~
II
- - 120
~
ICE X 2N30SS, BDX18 100 -1.S - 5 I !
I
MJ2955 100 -1.5 - - - 1 rnA ~ 60
.Ni, ,
~
I
'CEX' T C = lOOoC 45 -1.5 - 10 - - rnA
g
0
, ,II,
0.1
:
., , ,
1
A 'IUS -2':100~
ICEX, MJ2955 100 -1.5 - - - 5 COLLECTOR CURRENT (1 cl -
T C = 150°C 2N3055 100 -1.5 - - - 30

rnA Fig. 5 - Typical de beta characteristics .•
BDX18 60 -1.5 - - - 10
30 0 - 0.7 - 0.7' rnA 8 COLlECTOft-TO-EMITT[R VOLTAC;l (VeE'- 4 Y
-
'CEO eASE TEMPERATURE lTel .. Z!S·C
lEBO
2N3055, BDX18
MJ2955
5
7
7
0
0
0
-
-
-
-
-
5 -
-
-
-
5
5
rnA
i
:
:t-
.
1
/'"
~
1\
~ / \
VCEO(sus) 0.2 0 40b 60b V ~ 4
VCER(sus) ~ ,
45b 7ob' - V
RBE = IDOl!
3
0.2
4"
0
15 200 -
I
~
-
hFE
. , . , . ., . ..
I
4 4" - 20 70
O.Ot
, 0.1 I
, 10
Except BDX18 4 loa 5 COLLECTOR CURRENT tIel-A 92(5-29004
4 12" 5 100
Fig. 6 - Typical gain-bandwidth product.•
4 4" 1.8' 1.8'
VBE V
4 055 2
VBE(sat) V
2
VCE(sati 4 a OA 1.5 - 1.1
4 a 0.55 1.5
V
2N3055 only loa 3.3 8
MJ2955 only loa 3.3 3
12" 2.4 4 -
IT 2N6569 4 1 1.5
MHz
1= 0.5 MHz 2N6594 4 1 2.5 - - -
Ihle 2N305S 4 1 20 -
kHz SASE-TO-EMITTER VOLTAGE IV8E)-V92:CS_UOO~
1= 10 kHz MJ295S 4 1 - 10 -
Ihfel I = 1 MHz 4 1 - - 2.5 - Fig. 7 - Typical input characteristics_.
MJ2955 (only) 4 0.5 - 4 -
hie
1= 1 kHz 4 1 15 - 15' 20' I
I~,
ISlb 40 2.5 - 2.87 - A
tp = 1 s nonrep.
• Cobo 75 750 - - pF
VCB = 10V, 1= 1 MHz
.!.!L VCC = 30 V
2
2
0.2
0.2
-
-
0.4
1.5
-
-
-
-
Ii CUR' 'NT .1. ) m,
L IS1=IS2 IlS
i- 2 0.2 - S - -
• tf 2 0.2 - 1.5 - -
40 ..
2N3055, SDX18 - - 1.5 COLLECTOR-TO-EMITTER VOLTAGE IVCE)- V
1.7S· °C!W
R9JC MJ29S5 - - 1.17
• For p-n-p deVices, voltage and CJ.lrrent values are negative . Fig. 8 - Typical c.:,tput characteristics.•
bCAUTION: Sustaining voltages VCEO'_sus) and
• 2N types in accordance with JEDEC registration data. VCERlsus) MUST NOT be measured on a curve
• Pul$ed; pulse duration' •.loa,",s, duty factor =1.S%. tracer.
+For p-n-p devices, voltage and current values are negative.
_________________________________________________________________________ 77
POWER TRANSISTORS
2N3055, 2N6569, BDX18, 2N6594, MJ2955
COLLECTOR-TO-EMITTER VOLTAGE (VCEI- v 92CS-29001R2
I
100
COLLECTOR-TO- EMITTER VOLTAGE (VCE) - V
92CS-29002
Fig. 10 - Maximum operating areas for 2N6569 and 2N6594.·
,
78 ____________________________________ ----------------~----------------
POWER TRANSISTORS
2N3055, 2N6569, BDX18, 2N6594, MJ2955
ffi
0:
0:
=>
U
0:
~
U
'"oJoJ
o
u
4 6 BI
COLLECTOR- TO- EMITTER VOLTAGE (VCE1-V

92CM-3055aRI
Fig. 11 - Maximum operating areas for BDX18 and MJ2955.
100 CASE TEMPERATURE (T C 1-2!!1· C
~ I 90
~J eo
I I
71 v!ER1,l'l I••
8D~f'l~
~~
g~
70
mi J29 ,,,
VCEO{su.1
"> 60
8~
~~ !!IO VCER(sUl)
·u.> I
~a
40
2N6594
'Hi VJEO U.I
BASE-TO-EMITTER VOLTAGE (VeEI-1i
",",CS-29007
30
I
I
2. 46B
10
Z 468
100
II
2. 468
IK
2468
10K
EXTERNAL BASE-lO-EMITTER RESISTANCE (RBEI-A
2. 4
I .
9ZCS-UOOSR2
Fig. 12 - Typical transfer characteristics.•
resistance.•
+For p-n-p devices. voltage and current values are negative.
___________________________________________________________________________ 79
POWERTRANSISTORS·~ ________ ~ ______________________________________________
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
Hometaxial-Base High-Power Features:

• 2N6254: premium type from 2N3055
Silicon N-P-N Transistors (Hometaxiall family
• Maximum safe-area-of-operation curves
Rugged, Broadly Applicable Devices
• Low saturation voltages
The RCA-2N3055 (Hometaxial)', 2N6253, • Thermal-cycling rating curves
plied in JEDEC TO-204MA hermetic steel
2N6254 and 2N6371 are silicon n-p-n tran- packages.
sistors intended for a wide variety of high- The 2N3055 is also available in an epitaxial- Applications:
power applications. The hometaxial-base con- base version. To obtain the hometaxial-base
struction of these devices renders them highly type described in th·is data sheet, order the • Series and shunt regulators
resistant to second breakdown over a wide 2N3055 (Hometaxial).
range of operating conditions. • High-fidelity amplifiers
These devices differ in maximum ratings for *Formerly 2N3055H.
voltage and povver dissipation. All are sup-
• Solenoid drivers
• Low-frequency inverters
MAXIMUM RATINGS, Absolute-Maximum Values:
2N3055 TERMINAL DESIGNATIONS
2N6253 2N6254 2N6371 40251
(Hometaxial)
c
• vcso ................... .
'~
100 55 100 50 50 V
• VCERlsusl
RSE ' 100 n ......... . 70 55 85 45 V
* VCEo!susl .... _ ........ -" 60 45 80 40 40 V
VCEvlsus)
V SE =-1.5V ......... . 90 55 90 50 50 V
7 5 5 5 V
: rf:::::::::::::::::::::::.
• PT :
15 15 15 15 15
7
A
A
JEDEC TO-204MA
';;250 C .............. __ .. 115 115 150 117 117 W (See dimensional outline "Au.)
>250 C . _ ................. . _ _ _ _ _ _ Derate linearly to 200°C _ _ __
• TJ , Tstg ....... - ........ - - ... . -65 to +200 °c
* T L: During soldering, at distances
1/32 in_IO.S mm) from seating
plane for 10 s max. 235 °c
*In accordance with JEDEC registration data formats J5-9 RDF-l0; 2N3055 lHometaxiall
J5-6 RDF-2; 2N6253, 2N6254, 2N6371.
CXlLLECTOR·TO-EMITTER VOLTAGE IlIc£'04V COl.LECTOR-TO-EMITTER VOLTAGE {VCE'- 4 II

.le
CASE TEMPERATURE ITCI'2~"'C
I
j I.' ~ ?!>'C
"
60 .. '- I \"f..cY
} ..
.. V ; ~~~
t;
~ .1
L I ~
" . -;~)7
~
~,
I . ... . ... . ...

"
~ '\
It ·.
Z5 50 T5 100 125 150 175 200
~ . . . . . . .. . . .
,
\.
8
2
0.01 0.1 1.0 10

0.01 0.1 I 10
CASE TEMP£ffATUAE 1Tcl-"C COlLECTOR CURRENT (Xci-it.
COL.l£CTOR CURRENT IICI-A
Fig. 2 - Typical gain-bandwidth product Fig. 3 - Typical dc-beta characteristics for

Fig. 1 - Current derating curve for sl/ types. for al/ types. 2N3055 (HometaxisJ) and 2N6371.
80 ________________________~--------------------------------------------
----------~------------------____________________________ POWERTRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
ELECTRICAL CHARACTERISTICS, TC = 25°C Unless Otherwise Specified.

CHARACTERISTIC VOLTAGE CURRENT ~N3055
Ho";/).
V de Ade taxial 2N6253 2N~54 2N6371 40251 UNITS
VCE VSE Ic IS MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
2& 0 - - - 1.& - - - 1.& - -
ICEO 30 0 - 0.7 - - - - - - - - mA
SO 0 - - - - - 1 - - - -
40 -1.& - - - - - - - - - 2
• ICEX 4& -1.& - - - - ~ - - 2 - -
&& -1.& - - - 2 - - - - - -
100 -1.5 - 5 - - - 0.5 - - - - mA
40 -1.5 - - - - - - - 10 - .-
10
• TC = 150°C 50 -1.5 - - - 10 - - - - -
100 -1.5 - 30 - - - 5 - - - -
lEBO -5 - - - 10 - - - 10 - 10 mA
-7 - 5 - - - 0.5 - - - -
V(BRICBO 0.1 , ,
- - - - - - 50 - V
V(BRICEV -1.5 0.1 - - - - - - - 50 - V
V(BRIEBO
IE = 0.Q1 A
0 - - , - - - - - 5 - V
VCEO(susl 0.2' 0 SO - 45 - ,- SO - 40 - 40 -
VCER(susl
0.2' 70 ,
55 S5 - 45 - - - v
RBE=l00Q
VCEV(susl -1.5 0.1' 90 - 55 - 90 - 50 - - -
• hFE 4 3' - - 20 70 - - - - - .,
4 4' 20 70 - - - - - - - -
2 5' - - - - 20 70 - - - -
4 S' - - - - - - 15 SO 15 SO
4 10' 5 - - - - - - - - -
4 15' - - 3 - 5 - - - - -
4 16' - - - - - - 4 - - -
• VBE 4 3' - - - 1.7 - - - - - -
4 4' ,
l.S - ,
- - - - - -
2 5' - - - - - 1.5 - - - - V
4 S' - - - - - - - - - 2.2
4 lS' - - - - - - - 4 - -
• VCE(s,tl 3' 0.3' - - - 1 - - - - - -
4a 0.4" - 1.1 - - - - - - - -
5a 0.5a - - - - - 0.5 - - - -
sa O.sa - - - .. - - - 1.5 - 1.5 V
10" 3.3 a - S - - - - - - - -
15a 3a - - - - - 4 - - - -
15" 5a - - - 4 - - - - - -
lS a 4a - - - - - - - 4 - -
• In accordance with JEDEC registration data formats JS-9 RDF-l0: 2N30&&H; JS-S RDF-2: 2NS2&3. 2N62&4. 2NS371_
8 Pulsed: Pulse duration =300ps. duty factor = 1_8%.
___________________________________________________________________ 81
POWERTRANSISTORS~ ________________________________________________________
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251

ELECTRICAL CHARACTERISTICS. TC = 2SOC Unless Otherwise Specified.

CHARACTERISTIC VOLTAGE CURRENT ~N3055
Vde A de HO":f)'
taxial 2N6253 2N6254 2N6371 40251 UNITS
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
• hie
I ~ 1 kHz
4 1 15 120 10 - 10 - 10 - - -
~T 4 1 800 - - - - - 800 - - - kHz
• Ihlel
I ~ 0.4 MHz
4 1 - - 2 - 2 - 2 -. - -
• fhle 4 1 10 - 10 - 10 - - - - - kHz
IS/b 39 - - - - - - - - 3 -
tp ~ 1 5 40 2.9 - - - - - 2.9 - - -
nonrep. 45 - - 2.55 - - - - - - - A
60 1.95 - - - - - - - - -
80 - - - - 1.87 - - - - -
ROJC - 1.5 - 1.5 - 1.17 - 1.5 - 1.5 °C/W
'In accordance with JEDEC registration data formats Jscg RDF-l0: 2N3055H; JS-6 RDF-2: 2N6253, 2N6254, 2N6371.
COLLECTOR-TO-EMITTER VOLTAGE (VcEI- v COLLECTOR-lO-EMITTER VOLTAGE (VCErV

929S--3364R3
92CS-19435RI
Fig. 4 - Maximum operating areas for 2N6253 and 2N3055 (HometaxiaJ). Fig. 5 - Maximum operating areas for 2N6254.
82------__________________________________________________________________
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251

COLLECTOR- TO-EMITTER VOLTAGE tVeE j-4 V
..:.'1/. 30
;;;
z """7'!.<~
§ 40"'f."?'f..
o
! 20
0.1 1.0
COLLECTOR CURRENT l1cl-A
. ,. . ,. 10
~
g
0.01
. .. 0.1
. ,. 1.0
.. 6 8 10 10. 2. .. 6 e IO~ Z
NUMBER OF THERMAL CYCLES
.. II '10' 2.
COLLECTOR CURRENT IIc1-A

nCS-20150
Fig. 8- Thermal-cycling rating chart for
Fig. 6 - Typical dc-beta characteristics for 2N6253. Fig. 7 - Typical dc-beta characteristics for 2N6254. 2N3055 (Hometaxia!), 2N6253
and2N6371.
,. 100
/TJ Lx. zl.c
i ~S{..~
· "'
•
0
~+.oi:
i
'(;.~<
~
a
c
~
· \
\
'"
'\
...
~""~ f q ,
"
'~~~-~k
. , . .. , ~
O.
0
10'
. .
("I ("I
10'
C'
, 10'
,
NUMBER OF THERMAL C'I'CLES
BASE-lO-EMITTER VOLTAGE (VBE)-V
Fig. 9 - Thermal-cycling rating chart for BASE-TO-EMITTER VOLTAGE (V'BEI-V
t2CS-19~~3
2N6254. 92CS-IZ3Z6RI
Fig. 10- Typical transfer characteristics for Fig. 11- Typical transfer characteristics for
2N6253, 2N3055 (HometaxiaJ), 2N6254.
2N6371 and 40251.
10 100
COLLECTOR-TO- EMITTER VOLTAGE (YCE)7V
92C5-20674 92CS-Z0111
Fig. 12 - Maximum safe-area-of-operation at Fig. 13 - A(aximum safe·area-of-operation at

case temperature of 2d' C for 2N6371. c'ase temperature of looDc for 2N6371.
______________________________________________________________________ 83
2N3055 (Hometaxlal), 2N6253, 2N6254, 2N6371, 40251
IAIE-TO-E.nlElt VOL'1MI:tvat-V
Fig. 14 - Typical input characteristics for

2N3055 (Hometaxia/), 2N6371
- ...... 8ASE·TQ-iEMITTER VOLTAGE (V8Et-v
Fig. 15 - Typical input charscteristics for

2N6253.
IASE-fO-EMITTER VOLTAGE (V8El-V
Fig. 16 - Typical input cheracteristics

for2N6254.
and 40251.
10 20 30 40 50 80 70 80
COLLECTOR_TO-EllilITTER VOLTAGE tVCEI-Y COLLECTOR-fO-EMITTER VOLTAGE (VCEI-V
COLLECTOR-TO-EMITTER VOLT....E tvc!;)-V IICS-'1I4311
lteS-II.4'
Fig. 17 - Typical output characteristics for Fig. 18 - Typical output charscteristics for Fig. 19 - Typical output charscteristics
2N3D55 (Hom.taxia/} and 2N6371. 2N6253. for2N6254.
CASE TI!MPERATURE ITel-2II-e

100
Uoo veER 'lUll 2_114

,!IO VeEO "'nJ
~tl
~~~...
.:,.;0. 'lCER " ..I
U'"
::i~eo
VCEol ...1
VeER (lUI'
8m
~"
i~50 -V;:;RC",,) 2NS3" 1- YCEOtIu.l
VCEO(1U11
i~40
m~
I
.... . ... .... .... ....
1fT
10 100 IIC
EXTI!RNAL 8ASE-TO-EMITTER RESISTANCE IRIEI-A
101C lOOK
IICS-1144I1RZ
Fig. 20 - Sustaining I/O/Ill,. VI. base-to ..mlttar

resistanca for all types.
84 ___________________________________________________________________
2N3439,2N3440,2N4063,2N4064,40385,
40346,V1,V2,40390,40412,V1
High-Voltage Silicon N-P-N Transistors Features:
• High voltage ratings:
For High-Speed Switching and Linear-Amplifier Applications V CBO =450 V max. (2N3439,
2N4063)
These RCA types are epitaxial-base silicon indicator and N IX IE- driver circuits and = 300 V max. (2N3440,
n-p-n transistors with high breakdown in differential and operational amplifiers. 2N4064)
voltages, high-frequency response, and fast Types 40412, and 40412V 1, are VCEO(sus) = 350 V max. (2N3439,
switching speeds. These transistors are especially suited for class-A acldc audio· 2N4063)
intended for industrial, commercial, and amplifier service. = 250 V max. (2N3440,
military equipment. Typical applications These transistors are supplied in JEDEC 2N4064)
include high-voltage differential and oper- TO-39 hermetic packages or in the TO-39 • Maximum-area-of-operation curves
ational amplifiers, high-voltage inverters, package with factory-attached mounting • Low saturation voltages
and high-voltage, low-current switching flange or heat radiator. • Planar construction for
and series regulators. low noise and low leakage
eNixie is a Registered Trademark of Bur-
Types 4034.6, 40346V 1, and 40346V2 are roughs Corporation, Electronic Components
especially useful in such devices as neon Division, Plainfield, N.J. Additional Features for 40385:
• High reliability assured by five
preconditioning steps
• Group A test data in data File 215
2N3439 2N3440 40346 40412 TERMINAL DESIGNATIONS

2N4063 2N4064 40346Vl 40412Vl
MAXIMUM RATINGS. Absolute-Maximum Values: 40385 40390 40346v2
"COLLECTOR·TO·BASE VOLTAGE ...... VCBO 450 300 V
COLLECTOR·TO·EMITTER VOLTAGE,
With external base-ta-emitter resistance
(RBEI" l.oo0n. . . VCER(sus)
• 175 V
• 10.000n ..... VCER{sus) 250 V
With base open .. VCEO(sus) 350 250 V 92CS-275r2
'EMITTER·TO·BASE VOLTAGE ... VEBO 7 V JEDEC TO·39
"CONTINUOUS COLLECTOR CURRENT. IC 1 1 A 2N3439,2N3440.40346
·CONTINUOUS BASE CURRENT. 18 0.5 0.5 0.5 0.5 A 40385,40412
TRANSISTOR DISSIPATION, PT (See dimensional oulline "C".)
At case temperature up to 25 C D
10 10(2N34401 10(403461 10(404121 w
10(2N40641 10140346V21 8 C
At free-air temperatures up to 2SD C .. 1 (403851 3.5(403901 4(40346VlI 4(40412VlI W ~ANGEI
At free-air temperatures up to SOaC 1(2N34391 1(2N34401 1(403461 1(404121 W
~
At free-air temperatures above 25°C or SOOC Derate linearly to 20Qoe ·C
"TEMPERATURE RANGE'
Storage & Operating (Junction) ... -65 to 200 ·C 92<;~·1!15"
-LEAD TEMPERATURE lOuring soldering):

At distance$;> 1/32 in (0.79 mm) JEDEC TO·39 witt, Flange
from seating plane for 105 max . .... 255 ·C 2N4063,2N4064.40346V2
(See dimensional ouilin. "E".)
-2N-Series type, in accordance with JEOEC regiuration data
NOTE: PT value oilOW at TC" 2So Ccmd lead temperature 01 25SD C are registered data for 2N4063 and 2N4064 only.
HEAT
8
@10
a
CRAD:TOR
0
0
MOUNTING
TABS
2
JEDEC TO·39 with Heat Radiator

40390.40346Vl.40412Vl
COL.Ll:CTOR-TG-EMITTER YOt..TSIII I" (See dimensional outline "0".)
jl40 ,; COLLECTQR·TO-ENITTER VOLTAGE IIICEI -lOll
i .(Ii CASE TEMPERATURE (T CI - 25- C
i
120
100 ""tf~
~
00 ~~
I
10
iP.~
40
20
~
,
0.1 I 10
Fig. 1 - Typical dc-beta characteristics for

00
COLL.ECTOR CURRENT l1e)-mA '''''' 0.01 .,
COLLECTOR a..DfT lIcl-MlU.IAlllPEAES

10 100 ,00
." 10 ."
COLLECTOR CURRENT IIcl-IIIA
100
. " 'POO
2N3439, 2N3440, 2N4063, 40346, 40346V1, 40346V2. Fig. 3- Typical gain-bandwidth product for
2N4064 and 40390. 40412, and 40412V1. all types.
______________________________________________________________________ 85
POWER TRANSISTORS __________________________________________________________
2N3439, 2N3440,2N4063,2N4064, 40385,

40346, V1, V2, 40390, 40412, V1
ELECTRICAL CHARACTERISTICS, Ca!ie Temperature (TcJ = 25"C, Unless Otherwise Specified
LIMITS
VOLTAGE CURRENT 2N3439 2N3440 40346 40412
CHARACTERISTICS SYMBOL 2N4063 2N4064 40346Vl 40412Vl UNITS
V de rnA de
40385 40390 40346V2
VCE VBE IC MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Collector-Cutoff Current: 100 - - - - '- - 5 - -

With base open ICEO 200 - - - 50 - - - -
300 - 20 - - - - - -
200 - 1.5 - - - - - 10 - - I1A
With base reverse-
300 - 1.5 - - - 500 - - - -
biased:
ICEV 450 - 1.5 - 500 - - - - - -
150 - 1.5 - - - - - - - 2
At TC = 150°C mA
200 -1.5 - - - - - 1 - -
With R = 10,000 ohms ICER 100 - - - - - - - 1 mA
Collector-Cutoff Current ICBO
250 - - - - 20e - - - - I1A
360 - - 20C - - - - - -
-3 - - - - - - - 100
Emitter-Cutoff Current lEBO -4 - - - - - 5 - - I1A
-6 - 20 - 20 - - - -
10 2 30 - - - - - - -
DC Forward-Current
hFE 10 10 - - - - 25 - - -
Transfer Ratio
10 20 40 160 40 160 - - - -
20 30 - - - - - - 40 -
Collector-to-Emitter
Sustaining Voltage: VCEO(sus) 50 350· - 250· - - - - -
Wi th base open
Collector-to-Emi tter
V
Sustaining Voltage:
With external ba.se-to-
emitter resistance
RBE= 1,000 ohms VCER(sus) 50 - - - - 1753 - - -
RBe 10,000 ohms VCER(sus) 50 - - - - - - 250 3 -
Base-to-Emitter Voltage VBE 10 10 - - - - - 1 - - V
• Base-to-Emitter
Saturation Voltage V BE (sat) 50 - 1.3 - 1.3 - - - - V
IB = 4 mA
Collector-to-Emitter
Saturation Voltage V CE(sat)
IB= 1 rnA 10 - - - - - 0.5 - 0.5
· IB = 4 rnA
• Small-Signal Forward-
50 - 0.5 - 0.5 - - - -
V
Current Transfer Ratio: hie 10 10 3 - 3 - 2 - 2 -

f= 5 MHz
• Output Capacitance: - - - 10 - pF
Cob 10 10 10
VCB=10V,f=lMHz
Second-Breakdown Current -
ISlb 200 - 50 b - 50 b - - 50 rnA
tp = 0.4 s -
15 max. 15 max.
Thermal Resistance:
Junction-to-case ReJC - 17.5 - 17.5 (40346) (40412)
(40346V2)
°C/W
45 max. 45 max.
Junction-to-free air Re JFA - - - -
(40346Vl ) (40412Vl)
_CAUTION: The sustaining voltages, VCEO(sus) and VCER(sus), MUST NOT be measured on a curve tracer. b2N-Sertes types.
86 C2N3439 and 2N3440 only. *2N-Series types in accordance with JEDEC registration data.
POWER TRANSISTORS
2N3439, 2N3440, 2N4063, 2N4064, 40385,
40346, V1, V2,40390, 40412, V1
COLLECTOR-lO-EMITTER VOLTAGE(VeEI-IOV .. , ..
0.'
BASE-lO-EMITTER VOLTAGE (VeEI-V
Fig. 5 - Typical transfer characteristics for

2N3439, 2N3440, 2N4063,
2N4064 and 40390.
COLLECTOR-lO-EMITTER VOLTS IVCE)' to
a:
~
1d
...J
...J
o<)
o.
BASE-la-EMITTER VOLTS (YBEI

40346, 40346Vl, 40346V2,
40412 and 40412Vl
2 2 4 6 B
100
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V 92LM-1596RI
Fig.4-Maximum operating areas for 2N3439,2N3440,2N4063 and 2N4064 .
•VOLT'''--''''-''~
COLL£CTOR-TO-[MITTER VOLTAGE \VCE)~:'_I'OO
·Fig. 7 - Typical output characteristics for

2N3439, 2N3440, 2N4063,
I~ , 2N4064 and 40390
I;!' COLLECTOR-lO-EMITTER VOlTS
":
tv )_10
CASE TEMPERATURE (1: I- zs·c
~
;,'Y
~
I!
2:
~
L
f''':.
~
~
1}t-r- r~/- r- r-
~
~
..
i'ilKt,'
"I!l'"
,,~
o 5
~
'f- f- f-iP V
! .,
lO.3
10:
BASE-lO-EMITTER VOLTAGE !VSEI-V I2UH602

'.0
0.' .
BASE-la-EMITTER VOLTS IIIBl)
0.' 07 o.
tlCS-Il611
25 50 12~
COLLECTOR - TO - EMITTER VOLTS {VeEI-V
150 115 200 22~
5I2CS'I~110
Fig. 8 - Typical input characteristics for Fig. 9 - Typical input characteristics Tor Fig. 10 - Typical output characteristics fOr
2N3439, 2N3440, 2N4063, 40346, 40346Vl, 40346V2, 40346, 40346Vl, 40346V2,
2N4064 and 40390. 40412, and 40412Vl. 40412, and 40412V1.
___________________________________________________________________ 87
POWER TRANSISTORS
2N3441,2N6263,2N6264,40373,40913
Hometaxial-Base, Medium-Power Silicon N-P-N Transistors
Rugged Devices for Intermediate, Power Applications Features:
in I ndustrial and Commercial Equipment • 2N6264: premium type from 2N3441 family
• Maximum safe-area-of·operation curves for de and
pulse operation
RCA 2N3441, 2N6263, and 2N6264 are Types 40373 and 40913 are the 2N3441
• High voltage ratings
hometaxial-base silicon n-p-n transistors in- and 2N6264 with factory-attached
tended for a wide variety of medium to-high heat-radiators intended for printed- • Thermal~ycling rating curves
power, high-voltage applications_ These types circuit-board applications. Applications:
are supplied in the JEDEC TO-66 hermetic • Series and shunt regulators
package. • High-fidelity amplifien
• Power switching circuits
MAXIMUM RATINGS,Absolute-Maximum Value,: ONe263 ON3441 ONe ...
....3 40913
"'COLlECTOA-TO-BASE VOLTAGE .•.••.••.• _.• _.................... Veao 140 160 170 V
'0
COLLECTOR·TO·EMITTER C
SUSTAINING VOLTAGE:
• With base open ...•... , •• , ..... _ ...•...•..•• , •..•..........• _ ..... VCEO(susl 120 140 150 V
With external base-to-emitter resistance IRee) ,.. tOOn •..••....•......•. , •• VCER(sus) 130 150 160 V
Withbasereverse-biasedIV BE =·1.5VI ...........•.......•....•....... VCEV(susl 140 160 170 V
·EMITTEA·TD·BASE VOLTAGE •..•.•••• _..••..•..•.•.••••.••..•...•..• VEBO 7 7 V
·CONTINUOUS COLLECTOR CURRENT ............................... . Ie 3 3 A
PEAK COLLECTOR CURRENT ....................................... .
·CONTINUOUS BASE CURRENT ...................................... .
TRANSISTOR DISSIPATION:
I.
PT
4
2
A
A
At·t:ase temperature up to 2SoC .....•..•.••.•...••......•...........• 20 25 50 W

(2N6263j (2N3441) (2N6264J JEOfC T0-66
At ambient temperatures up to 2SoC •.•..••.•...•..•.................. 5.8 5.8 W 2N3441.2N6263.2N6264
140373) 140913) (See dimensional outline "N"_)
At temperatures above 2SoC ..•.•..•..•.•.....•....•... ,. Derate linearly to 200°C
·TEMPERATURE RANGE:
Storage & Operating (Junction) , ..••.•.• , ......•.•..•....... - - '- - -65 to 200 - - - °e
·PIN TEMPERATURE (During Soldering):
At di50tances21132 in. (0.8 mml from seating plane for 10 s max. - - - - 235 ---- Oc
-In accordance with JEOEC registration da'bl format JS.a ROF·2
!
c
(HEAT RAOIATORl
JEOEC TO-66 with Heat Radiator

40373,40913
(See dimensional outline "0".)
.
.I ,
~~ ~U
>- '>
~
\,\ '«
i5 ~~-f+.
.. \
1\
, -,
\
10
~
\ ~~-' - -
..:
I
~ '{~ ~"
u
!:! 4
104
I~ It 4 • 'IO~
'\ 4 . 'loG
I~
f-
Z NUMBER OF THERMAL CYCLES
'"
II::
II:: Fig. 2- Thermal-cvcle rating chart for 2N6264.
:::>
U
II::
!?u
~
...J
a
u
2 6 8 10 4 8 100 6 81000 10'

NlM8EI'I Of THERMAL CYCLES
COLLECTOR-TO-EMITTER VOLTAGE (VCEl-V 92C$-19472
Fig_ I-Maximum operating areas for 2N3441 and 2N6263. Fig. 3- Thermal-cycle rating chart for 2N3441_
88 __ ~ _____________________________________________________________
2N3441,2N6263,2N6264,40373,40913
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2fjOC, Unless Otherwise Specified
2N6263 2N3441 2N6264
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 40373 40913 UNITS
V de A de
VCE V EB V BE IC IB Min. Max. Min. Max. Min. Max.
Collector-Cutoff Current:
100 0 - 5 - - - -
* With base open ICEO 130 0 - - - - - 1 rnA
140 0 - - - 100 - -
120 -1.5 - 2* - - - -
ICEX 140 -1.5 - - - 5* - -
140 -1.5 - - - 1 - -
With base-emitter 150 -1.5 - - - - - 0.05*
junction reversed mA
biased 120 -1.5 - 10* - - - -
I CEX 140 -1.5 - - - 6* - -
(T C = 150°C) 140 -1.5 - - - 5 - -
150 -1.5 - - - - - 1*
* Emitter-Cutoff Current lEBO 5 - 2 - - - - mA
7 - - - 1 - 0.2
Collector-ta-Emitter
Sustaining Voltage: a VCEO(sus)
* With base open 0.1 0 120 - 140 - 150 -
With external base-to-
emitter resistance VCER(sus) 0.1 130 - 150 - 160 - V
(R BE ) = 100 Q
With base-emitter
junction reversed VCEV(sus) -1.5 0.1 140 - 160 - 170 -
biased
2 1 - - - - 20 60
* DC Forward-Current hFE 2 3 3 - - - 5 -
Transfer Ratio 4 0.5 20 100 25 100 - -
4 2.7 - - 5 - - -
0.5 0.05 - 1.2* - 1 - -
Collector-ta-Emitter VCE(sat) 1 0.1 - - - - - 0.5* V
Saturating Voltage 2.7 0.9 - - - 6* - -
2 1 - - - - - 1.5*
Base-ta-Emitter Voltage V BE 4 0.5 - 2* - 1.7 - - V
4 2.7 - - - 6' - -
* Magnitude of Common-
Emitter. Small·Signal.
Short-Circuit Forward Ihle l 4 0.5 5 - 5 - 5 -
Current Transfer Ratio
(I = 40 kHz)
Gain-Bandwidth Product IT 4 0.2 200 - 200 - 200 - kHz
* Common-Emitter, Small-
Signal, Short-Circuit hie 4 0.1 25 - - - 25 -
Forward Current Transfer 4 0.5 - - 15 75 - -
Ratio (I = 1 kHz)
Forward-Bias Second
Breakdown Collector 120 0.167 - - - - -
Current, Pulse Duration
(non-repetitive) = 1 s
i S/b 120
120
-
-
-
-
-
~.21
-
-
0.417
-
,-
-
A
.
Thermal Resistance:
Junction-to-Case ReJC 8.75 (max.) 7 (max.) 3.5 (max.)
2N6263 2N3441 2N6264 °C/W
Junction-to-Free Air ReJA 30 (max.) 30 (max.)
40373 40913
*In accordance wIth JEDEC registration data format (JS-6 RDF-21.

'CAUTION: The sustaining voltage VCEO(sus), VCER(sus), and VCEV(sus) MUST NOT be measured on a curve tracer.
These sustaining voltages should be measured by means of the test circuit shown in Fig. 23.
_________________________________________________________________________ 89
POWER TRANSISTORS
2N3441,2N6263,2N6264,40373,40913
. VTJ~XlrC
~
,
Ls ~',II
~ 10
;t •
..; f\ ~~~s
;;
R •
!i
. \ \~\~
~
I.'
...
\ '\.
.' NIMBlER OF THERMAL CYCLES
1.6
Fig. 5-· Thermal·cycle rating chart for

2N6263.
CASE TEMPERATURE ITc 1·2~~C
VC~RC-) 2N6264.~~9IJ
z 16'
~-
~.
~~
II:: I ISO
.JJll. LJ.J.jL[ r"-, VeEO!"")
il
*~~~r40
t'-r-- .lJ.
~ii! ... VeER !IU.} 2N6261
10 8 100 4 6 81000
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V 92CS-19471
",' IIII III
2 4 6 8 10 24611 000 2
'r--
• • I'k 2
YCEOC_l
"alJOt( 2 " 100
EXTERNAL 8ASE-TO-EMITTER RESISTANCE (RaE"'-ll
Fig. 4 - Maximum operating areas for 2N6264. "__ HCS-IMT41ti
Fig. 6- Sustaining voltage vs. base-to-
emitter resistance for all types.
COlJ..ECTOR-TO-EIIITTER VOLTAGE {VeE}- 4 V
i ...... !140 COU£CJtIRoTO-DlITTER VCllTAGE (VCE'-" Y

16'
OLLECTOR-TO-EIIIIITTE.It VOLTAGE IV I"
,
0
-l-
0 5140
i
120
IH-~ i
120
r-,
,..
k
-I- -~
~ 120
~
100
~ ~
~~
\ \
i 00
iii
~
o. §f
1-1- V ~~I~rc V
~~ I eo
V-
,.
I'.1\..
:ruRE 11:-80
if \
CASE TEMPERATURE
1Tel-Z,-e
..
i'
!~ 40 O•
Il '1'10.<:'.·, !e ;'
"<Nil I
! . . . .. . ~~
20
. ...
-,' .,.. -,
If r-
r
8
20
...... ' .. 1Ct"2

...
Vi
.- . . .
'i"
COLL!c:I'OR CURRENT IICI- A
~
I.
~
20
10-3 r 4 .\rz I 4 • •10 - 1 . . . .....
r25:~~
I
I
CClU.ECTOR CURftIENT Uel ...... eOLUCTOR CURRENT IIel-A 92C5-19514
Fig. 7- Typical dc-beta characteristics for Fig. 8-· Typical dc-beta characteristics for Fig_ 9-Typical dc-beta characteristics for
2N3441 and 40373. 2N6263. 2N6264 and 40913.
eASE-le-EMITTER VOLTAGE 1V8[I-V BASE ·TO· EMITTER VOLTAGE 1\l8EI-V ItASE·TO-EMITTER YI1TAGE 1\l8£I-V
..
Fig. 10- Tvpical transfer characteristics for Fig. 11- Typical transfer characteristics for Fig. 12- Typical transfer characteristics for
2N3441 and 40373. 2N6263.. 2N6264 and 40913.
90-------------------------------------------------------------------
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373, 40913

ICCI..L£CTOfI-lO-ElllTTER VOLTAIl CYCE)a4Y
...
CASE Tt..aAT\ItI.: ITe)-IS-C
I.'
tio.o
,. V
LO
t--
i
~
;: •.0
I ...
1"- I
~
I~
i on-
. . .. . . .. . . ..
0.2
10 Irf 10' '" 100 ISO zoo

COLLECTOR CURRENT IIc1-M" COLLECTOR-lO-EMITTER VOLTAGE tVCE'-V
BASE-TO-EMITTER VOLTAGE IYBE'-V . 'Zts-I2f>4Z
Fig. 13- Typical gain-bandwidth product Fig. 14- Typical input characteristics for Fig. 15- Typical output characteristics for
for al/ types. 2N3441 and 40373. 2N3441 and 40373.
CASE TEMPERATURE (Tc,-25·C
I.'
iOl
~ ....
III
I
~
~Q 10
50 toO IW ,zoo
IWiE-TO-EMITTER VOLTMElVaE;l-Y ass-un
I .•
IASI! -TO - EIlITTER VOLTAGE IVBE 1-: ICS _.,ISII
tou.£CTCllt-TO-DlITTER va..TAIiE IVCE'-V
Fig. 16-Reverse-bias second-breakdown Fig. 17- Typical input characteristics for Fig. 18-· Typical output characteristic.,
characteristics for al/ types. 2N6263. for2N6263.
I.'
...
00
..
I.
CURRENT II 1 _o. •• A
ao 100 150 100

COLLECTOR -TO-EMITTER VOLTAGE 1"ce.1-V
'2CS-ItI~13
Fig. 19- Typical input characteristics for Fig_ 20- Typical output characteristics for
2N6264 and 40913. 2N6264 and 40913.
___________________________________________________________ 91
POWER TRANSISTORS
2N3442,2N4347,2N6262
Hometaxial-Base High-Voltage Silicon N-P-N Transistors

Rugged High-Power Devices for Applications in Features:
I ndustrial and Commercial Equipment • Low saturation voltages
• Thermlll-cycle rating cherts
• Hi"" dissipation capability - 100 W (2N4347)
RCA 2N3442, 2N4347. and 2N6262 are hometaxiar·base', Thesedeviats employ the popular JEDEC TO-3 packlHle; they
- 117 W (2N3442)
silicon "-p-n transistors intended for a wide variety of differ in maximum ratings for voltage, current. and power.
high-power, high-voltage applications. Typical applications - 150 W (2N6262)
for these transistors include power-switching circuits, audio • Mexil'rMlm .-..of·operation curves
amplifiers, _ies- and shunt-regulator driver and output for de end pul. operation.
stages, dc-to« converters, inverters, and solenoid Ihammer)1 Applications:
relay driver service.
• Series and shunt regulators
• Hi.,...fidelity emplifien
MAXIMUM RA nNGS, AblOlute-Muimum V_lues: 2N4347 2N3442 2N6262 • Power·switching circuib
·COLlECTOR·TO-BASE VOLTAGE ....•••.•..•..•. " •..•• ', .••.. V CBO 140 160 170 v
COLlECTOR·TQ·EMITIER VOLTAGE: TERMINAL DESIGNATIONS
• With base cpen •••• , •••••••••••••••••••••••••.••••••• '. • • • • • • • • • . • • VCEO 120 140 150 v
Withreverseb . . IV SE 'of-l.6V ..................................... VCEV 140' 160 170 v
-EMITTER·TO-BASE VOLTAGE ••••••••••••••••••••••••••••••••••••••• VESO v
-COLLECTOR CURRENT:
Continuous .•..• ,' ..•..•.•........•...•...•..•.•..•.•...•• " .•• , .•
'c 10 10 A
P.k ....................... " .................................. .
'.
10' 15 15 A
-BASE CURRENT:
Continuous ..•.•.•.•..•.••..•••...••......••....•...••...••..•...
Peek ••••••.•.•••.•.••••••.•••.• , •••. , ••.•.••..• , •••••. , ••. ,., ..
-TRANSISTOR DISSIPATION:
At c:.I8 ternpereture up to 2So C , •••• , •• , •.•••• , .••• , ••••••••••••••..•
At CIIIII ternperlturetllbove 2SoC •.••••••.• , .• , .•.•. , •.•••.••....••••.•
PT .'
100 117 150
A
A
W
Derate Ii nearly to 2000 C JEDEC T0-3
-TEMPERATURE RANGE:
Sto,. a Operating (Junction), ••.••••...••.••..•••••.•..•••••.••. , ... 4--- -66to+2oo--..
-PIN TEMPERATURE IDurlngSoldBrlng):
(See dimensional outline "A.")
At dlstancesLl/32 In. 10.8 mm) from case for 10 s miX••• , •• " •• " ••• , . , •• 236 235 23.
'In 8CCord.nc. with JEDEC ~ldl'lltlon ct.tIi format (JS-6. RDF-2).
CASE n:MPERATURE ITCla28·C

~
~ 170
~
I>' ~c.~ I
.1
i!, ~c.! m....) VCEO
a::~
~~40 II ~ t~
=
~ 130
l~ I I
I. . I I
I~ II. I I
tr1 .~
II
tJ
I
".1 I
Z
10
Z " ••
100
I! " ••
II(
Z " ••
101(
Z"'I 1001(
fXTEltNAL. BASE&TO-EMITTER RESISTANCE {RtE1-A
ncl-tftI,,,
Fig_2-Sustaining voltage vs_ base-to-emitter

resistance lor all types_
-
COLLECTOR - TO -EMITTER VOLTAGE (VCE)-V
I2S5-3212
Fig_1-Maximum operating areas for 2N3442_

.,,- " • 'IO~
NUMBER Of' THEltMAL. CYCL.U
I ".1 106
Fig_3- Thermal-cycle rating chart for

2N3442_
92 ______________________________________________________________________
2N3442,2N4347,2N6262
ElECTR ICAl CHARACTER ISTlCS, At Case Temperature ITC) ~ 2SoC unless otherwise specified

CHARACTERISTIC SYMBOL UNITS
VOLTAGE CURRENT
2N4347 2N3442 2N6262
V de A de
V CE V BE IC IB Min. M.x. Min. M.x. Min. M.x.
Collector Cutoff Current: - - - 1· - 1 mA

With emitter open ICBO
IVCB~140V)
· With base-emitter junction

reverse-biased ICEX
120
140
-1.5
-1.5
-
-
.-
2
- -
-
5
1
-
-
-
-
-
-
mA
140 -1.5 -
150 -1.5 - - - - 0.1

reverse-biased and
Tc = 150°C
ICEX
125
140
140
-1.5
-1.5
-1.5
-
-
-
10
--
-
-
-
-
-
30
10
-
-
-
-
-
-
mA
150 -1.5 - - - - - 2
· With base open ICEO
IOU
110 -
200
- - -
-
- 1
-
mA
140 - - - 200 - -
* Emitter Cutoff Current I~Rn -7 0 - 5 - 5 - 0.2 mA
2 3a - - - 20 70
2 lOa - - - - 5 -
* DC Forward Current 4 2a 15 60 - - - -
Transfer Ratio hFE 4 3a - - 20 70 - -
4 5a 10 - - - - -
4 lOa - - 7.5 - - -
Collector·to-E mitter
Sustaining Voltage:
With base-emitter VCEVlsus) -1.5 0.1 140 - 160 - - - V
junction reverse- -1.5 0.2 - - - - 170 -
biased
With external base·ta-emitter VCERIsus) 0.1 130 - - - - - V
,,,,,iSlance IRR~) = lOOn 0.2 - - 150 - 160 -
· With base open V CEOlsus) 0.2

0.2 a
0
0
120
- -
-
140
-
-
-
-
-
150
-
-
-
V
2 3a - I
4 3a - - - 1.7 - -
* Base-ta-Emitter Voltage V BE 4 2a - 2 - - - - V
4 5a - 3 - - - -
4 lOa - - - 5:7 - -
• r--0llector-to-Emitter 2" 0.2 - I - - - -
Saturation Voltage VCElsa,) 3a 0.3 - - - I - 0.5 V
5a 0.63 - 2 - - - -
lOa 2 - - - 5 - -
67 1.5 I - - - - -
Power Rating Test PRT 78 1.5 - - I - - - 5
100 1.5 - - - - I -
• Magnitude of Common-
Emitter. Small-Signal,
Short~Circuit, Forward
Current Transfer Ratio: Ihle l

1= 50 kHz 4 0.5 4- - - - - -
1= 40 kHz Ihle l 4 I - - - - 2 -
4 2 - - 2 -
Common-Emitter, Small-
Signal, Short-Circuit, 4 0.5 40 - - - - -
Forward Current Trans- hie 4 I - - - - 10 -
fer Ratio If = I kHz) 4 2 - - 12 72 - -
Thermal R..istance:
Junction-to-Case
ROJC - 1.75 - 1.5 - 1.17 oCIW
O'n 8OCordanee with JEDEC registration data format JS.o RDF·2

·Pulae tilt; pulae duration - 300 fJI,rep. rate = 60 liz
________________________________________________________________________ 93
POWER TRANSISTORS
2N3442,2N4347,2N6262
4
• • 10 200
COLLECTOII-lO- EMITTER VOLT_ CVC[I-Y
HSS-SZII
~ 8 10 6 8100
COLLECTOR-1O-EII'TTER YOt.TAGE CVCEI-V
92CS-IH&.
94 ______________________________________ ~ ____________ ~----------------

2N3442, 2N4347, 2N6262
COI..LECTQR-TQ-[NITTEA VOLTAGE (VCE'- 4 II
l'
C-,-- - II
'2 100
::i /
-- "'kr-- :&,:j
10
i
!• •0
V ',"~
"~
:t1O
1.2
.B
LV I '~~- . o.
i
~
H
20
0
r
~N
. . .. . ... . . ..
' ~/
.~~~
O!i 1.0 I.~ :a.o
ASE URR NT (to· 0.2 It
Z!I 3.0 3.15
." 0.1
COLLECTOR CU''''£NT UCI-A
I
8AS[-TO-[fiII'TTU VOLTAGE IVsEJ-v
COLLECTOR-TO-EMITTER VOLTAGE {Vce-V
Fig. 6 - Typical dc beta characteristics Fig. 7 - Typical transfer characteristics for Fig. 8- Typical smal/'signal output characteristics
for 2N3442. 2N3442 and 2N4347. for 2N3442.
.
'.0
\ >.:1;1
\0 100
.,e+---+--~-+~~--~~--~~--
12~
;2.0
.
f
I
~
~ 1.5
~ I~
0.'
20 ..
COLLECTOR-lO-EMlTTER VOlTAGE IVa;I-v
BASE-lO-EMITTER VOLTAGE (liBEl-V
• 1004 i • 10'3
Fig. 9 - Typical large-signal output characteristics Fig. 10 - Typical input characteristics for Fig. 11 -Thermal·cycle rating chart for 2N4347.
for 2N3442. 2N3442.
-. COLLECTOR-lO-EMITTER VOLTAGE (VCE" 4 II CASE TEMPERATURE (Tel- 2!5·C
. -
~.... 7 , \2<l
:~
~
~
~ro
/.
/
'- ~II
K""il ~
'1>
\00
60
60
1~I~t
• '0
ffi
/ o
'~
I! 50
0.6 u' "
i
~
20
"l~'~~c BASE CURRENT II )-0.2
OJ
..
10
H
, . .. OJ
,
COLLECTOR CURRENT {Ie I-A
.. I
, u
COLLECTOR-lO-EMITTER VOLTAGE rvw:-v
u ~
COLLECTOR-lO-EMITTER VOLTAGE
"0
("eel-V
Fig. 12 - Typical dc beta characteristics for Fig. 13 - Typical smal/'signal output characteristics Fig. 14 -Typical large-signal output characteristics
2N4347. for 2N4347. for 2N4347.
150 COLLECTOR-TO- EMITTER VOLTAGE ('leO' 4 II

I I
.,
I
100
I /TJ
~k::-c
MAX.-200·C
:~
;
~
100
1/
I
,ki- 1
I i
I
f
. ~s~ >
eo 0
"
vV-
" I I"
0
~ \ I"\.
K.f,.Q,f-9:
. eo
~+--
." ,
~
\
4}"G--9,f c
1)/44''''e- "~ '0

'". . .1-~_
~
y
~N'IN ~
~ ~
i?
,0 ~~~ c 'c
[
.... SE-lO-EMITTER VOlTAQ[ '''he-V
L2
"
'~~.0.
0
e 104
(\
%.~
"
6 B IO~
C'/
6 8 106
g
0
, ..
0.1 I
, . e , ., • 10

lrU$-UV'
Fig. 15 -Typical input characteristics for Fig. 17 - Typical dc beta characteristics for
2N4347. Fig. 16 -Thermal·cycle rating chart for 2N6262. 2N6262.
____________________ ~ ________________________________________________ 95
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N3442,2N4347,2N6262
.,
60
'.0
l~~
" ,.
~ 2.0
a
It:
E
j
8
1.5
1.0
.' c.UR E
0.5 1.0 1.5 2.0

COLLECTOR-tO-EMITTER VOLTAGE
2.5 3.0
Iva,J-v
3.5 .. eo
COLLECTOR-tO-EMITTER VOLTAGl fYCEI-v UCS-'"4'
Fig. 18 - Typical transfer characteristics for Fig. 19 - Typical smal/'signal output Fig. 20 - Typical large-signal output characteristics
2N6262. characteristics for 2N6262. for2N6262.
~. COLlECTOR CURRENT (tel/BASE CURRENT (Ia}*to
··
CASE TEMPERATURE ITel- 2!!1-C
INDUCTANCE {L I • 2'?O IIIH
~f(.
,_"Ii
...i
.!:! 0.4
i
"" L~v ,,"
~
~~ i/
.t
i· I A ,/
!··
~
" , I
0.1
· . . .nII. . . . .
0/
0.01 0.1
I
/
1.0
8ASE-TO-EMITTER VOLTAGE (VSEI-V COl.LfCTOfII~To.[MITTE" SATlJIATION VOLTAGE frC[CMt~l-;:32" BASE-tO-EMITTER \(ll.TAGE IVSEI-V
Fig. 21 - Typical input characteristics for Fig. 22 - Typical saturation·voltage characteristics Fig: 23 - Reverse·bias, second-breakdown
2N6262. for aI/ types. characteristics for all types.
96 _______________________________________________________________________
______________________________________ ~ __________________ POWERTRANSISTORS
2N3583-2N3585, 2N4240, 40374

Features for JEDEC Types:
High Voltage Silicon N-P-N Transistor • 1 DO-percent tested to assure freedom
For High-Speed Switching, Linear-Amplifier Applications, and Off-Line from' second breakdown in both
Switching-Regulator Type Power-Supply Applications forward- and reverse-bias conditions
when operated within specified limits
These RCA types are silicon n-p-n transis- These transistors are also intended for a • Economy types for ac/dc circuits
tors with high breakdown voltages and wide variety of applications in ac/dc com- • Fast turn-on time at high collector
fast switching speeds. mercial equipment. current
Typical applications for these transistors Types 2N3583, 2N3584, 2N3585, and
include high-voltage operational amplifiers, 2N4240 are supplied in he'rmetic JEDEC
high-voltage switches, switching regulators, TO-66 packages. Type 40374 is a 2N3583
converters, inverters, deflection- and hi-fi with a factory-attached heat radiator.
amplifiers.
2N35B5
MAXIMUM RATINGS, Absolute-Maximum Values: 2N3583 2N3584 2N4240 40374
'COLLECTOR·TO·BASE VOLTAGE ...•..•.••• VCBO 250 375 500 250 v (See dimensional outline "N.")
'COLLECTOR·TO·EMITTER SUSTAINING
VOLTAGE:
With base open .................. .' ... . vCEOl>us) 175 250 300 175 V
'EMITrER'TO·BASE VOLTAGE ••..•...•...• VEBO 6 6 6 V
'CONTINUOUS COLLECTOR CURRENT ...•... IC 2 2 A
'PEAK COLLECTOR CURRENT .•••......••. ICM A
'CONTINUOUS BASE CURRENT •...•..•....• 'IB A
'TRANSISTOR DISSIPATION •..•...•.•••..• PT
At case temperature ITcl "" 25°C .......... . 35 35 35 w
At ambient temperature ITAI '" 25°C ........
At case temperatures above 25°C . . . . . . . . . .
.
.
5.B
- - - Derate linearly at 0.2 W/oC - - -
w
C
I JEDEC TO·66 with Heat Radiator
. 40314
For other conditions . ................... . IHEAT RADIATORI
- - - - Derate linearly to 200°C - - -
'TEMPERATURE RANGE:
Storage & Operating (Junction) . ............ . -65 to 200 ·C (See dimensional outline "0.")
'PIN TEMPERATURE:
1116 in. 11.58 mml fron'! seating plane for lOs max. 235 235 235 235 ·C
*In accordance with JEDEC registration data format JS-6 ROF-2 12N3583J. JS-6 ROF-1
12N3S84. 2N3585, 2N42401.
COLLECTOfI-TO EMITTER VOLTAGE (VeO-IOV

COLLECTOR-TO-ENITTER VOlTAGE {Val-IO v
~ 1\
200
~ ... I50
IIII I
~~
~~
IIII I
I
,~ l,~i;i~ I I
1--
~~
..
[iIEIOO
;.
~~' 1111 ' II
~i
o~ '"
"
i:
II
, , , ..,. ..,.'
,
COLLECTOR CURRENT tlcl- mA
2 ..
.......
'
68103 .tJ ,f 0.4 0.6 0.8

.:::::::::::::::::::::
1.0
COLLECTOR CURRENT tlcl-A
1.2
.... -
1.6
Fig. 3- Typical collector-to-emitter saturation

Fig. 1-Typical de beta vs. collector current Fig. 2- Typical dc beta vs. collector current for voltage vs. current for 2N3584
for 2N3583, 2N4240 and 40374. 2N3584 and 2N3585. . and2N3585.
POWER TRANSISTORS
2N3583-2N3585, 2N4240, 40374

ELECTRICAL CHARACTERISTICS at Case Temperature (TC) = 2S<>C Unless I)rherwise Specified
TEST CONOITIONS LIMITS
CHARACTERISTICS SYMBOL VOLT· CURRENT 2N3583

2N3584 2N3585 2N4240
AGE 40374 UNITS
V de mA de
Vee VBE IC IE 18 MIN. MAX. MIN, MAX. MIN. MAX. MIN. MAX.
• Collector-Cutoff
ICEO 150 10 mA
Current
225 -15 1.0
• Collector-Cutoff
ICEV 340 -1.5 1.0 mA
Current
450 -1.5 1.0 2.0
225 -1.5
At TC '" 150°C ICEV I 300 -1.5 3 5.0 mA'
• Emitter-Cutoff
lEBO -6 5.0 0.5 0.5 0.5 mA
Current
750" 10 100 Fig.4-Reverse-bias second breakdown
lA' 80 80
* DC Forward- 10 1008 40 40 40 40 characteristics for 2N3584 and
hFE
Current 10 ~:'S08 40 200 2N3585.
Transfer Ratio 10 750~ 30 150
10 1A 10 25 100 25 100
Collector-ta-Emitter :::_~~~E:I~TTUERRE ~~;!5~BE) --'IV 1$ - fj:
Sustai ningVol tage:
With base open VCEO(sus) 200 0 175- 250· - 300· - 300· - V
INDUCTANCE (U'IOOjLH
tc .-
With external base- 250 ,
1.0
fa
~. ~
to·emitter resis·
lance (RSE)=50 H
leER 300 200 1.0
1.0 1.0
rnA
nl! t
450
750' 75 1.8
5 ·~h II j
ill
~
• Base-to-Emitter V
VSE(sat) lA' 100 - 1.' 1.. 1.4
:t]
l~
Saturation Voltage
g j
• Collectot-to-Emitter
Vce(sat)
75D~
lA'
75
125
-
- 0.75 0.75
1.0
V ~ nil rrrrmn ll+ {
8
Saturation Voltage
Small,Signal Forward ~ ,~q I I::lilll, ,

40
Current Transfer
Ratio
"
E)(TERNAL BASE-lO-E'-lITTEFI RESISTANCE (RBEI-n
hIe
I'" 5 MHz 10 200 3 Fig.5-Reverse-bias second breakdown
f" 1 kHz 30 100 25· 350
Magnitude of Com
characteristics for 2N3584 and
mon-Emitter, Smal~ 2N3585.
Signal, Short
Circuit. Forward I hIe I 10 200
Current Transfer CASE TEMPERATURE (Tcl' 25"C t:
Ratio
EXTERNAL BASE-TO-EMITTER
RESISTANCE IRBEI • 20 n ,.'
f" 5 MHz INOUCTANCE (LI • 100 "H 1T, t
Output Capacitance:
VCB "10V. 1=1 MHz
Cabo 120 120 120 120 pF ~+~~f\C."'\.
Second-Breakdown
Collecto,r Current 100 350 350 350 350 mA
1;~'i>'l'" :j
!
With base forward- 'Slb
biased"
Second-Breakdown , 8
Energy with base
reverse-biased
lA
50 50
11H
ES/b -4 pk
RBE < 20n. "J
L =100/-IH -6 4 -2
BASE-TO-EMITTER VOLTAGE {liBEl-V
RBE - 20n: 2A
-4 200 200
L=100/-lH pk
" Saturated Switching Fig.6-Reverse-bias second breakdown
Time (VCC"'200V): characteristics for 2N3584 and
Rise Time 1A 100 - 2N3585.
(See Figs. 13 & " 750 75 - 0.5
161
Storage Time
(See Figs. 14 & 1A 100 - "' ,
COLLECTOft-TO-£MITTER VOLTAGE {VeEl. 10 V
I
" 750 75 -
_.JGj- I--lfj-
I !/
16)
Fall Time '0
750 75
(See Figs. 15 & '1 1A 100 • 3
1
I t:"L J 11
16)
~ '0 !I
" Thermal Resistance: 5 (Max_)
-Ii I
Junction-to-Case
Junction-to-
ROJe
2N3583
70 (Max.)
2N3583
70 70 70 °C/W
I~ r-- 1---
201---
i
r-- ~~r--- I
j /
Ambient
ROJA
30 (Max.) ~
II /
40374 /
V
---- ---
" In accordance with JEOEC registration data formal JS-e ROF-2 (2N3583). Js-e ROF-' (2N3584, 2N3585, 2N4240)
• CAUTIO~: The sustaining voltages VCEOhus) and VCER(sus) MUST NOT be measured on a curve tracer_ °0.4 <0
BASE-TO'EMITTER VOLTAGE {VSEI-II
"'Specifiedvalue of IS/b for given value of VCE as base voltage is increased from zero in a positive direction.
• Pulsed. pulse duration'" 300 j1S; dutY factor'" 2%.
Fig. 7- Typical input characteristics for
all types.
98
2N3583-2N3585, 2N4240, 40374
10
COLL.ECTOR-lo-EMITTER VOLTAGE (VCEI-V
Fig.8-Maximum operating areas for 2N3583, 2N3584, 2N3585, Fig.9-Maximum operating areas for 2N3583, 2N3584, 2N3585,
and 2N4240 (pulse conditions). and 2N4240 (dc conditions).
" '-
PULSEOURATlON'20,,-5
REPET1TION RATE' 1000 PULSES/.
COLLECTOR SUPPLY VOLTAGE ("eel-ZOCV
, CASE TEMPERATURE {Tel o 25"C
; lei ot92
;-+-+-j-=~:r+=M4
T r'-+-~-'+--~-T'-T;-'r'-T-T-1
COLLECTOR-TO-EMITTER VOLTAGE !Veri-V

Fig. 11- Typical output characteristics for Fig. 12- Typical rise time VS. collector current
Fig. 10-Maximum operating areas for 40374, 2N3583 and 40374. for 2N3584 and 2N3585.
PULSE DURATION- 20;"5

REPETITION RATE. 1000 PULSES/,
COLLECTOR SUPPLY VOLTAGE (\leel'ZOOv
PULSE aURATlON'20 /I'
REPETITION RATE -1000 PULSES/,
CASf: TEMPERATURE tTCI'2~'C -'+""I~~~~
1:81 "t62 :':V:: ::-: :... Ie -IA; 1:e ·O.IA
CASE TEMPERATURE (Tc l.2!!i°C
c:-rjm-,c:T'c:'","~
·~l "·1
:"T::' , II do' ;;! •..

I •t
>t. n: i:!
I"j'
:::">':::":'" "j as
:;:1 8
~
i 1 ~~
~ 0.6
• +
.
:: 04
i= a2
"
o 020.40.60.8101214161820 a 0.2040.6 0.8 1.0 1.2 14 16 18 2.0 " SO 100 ISO 200 2S0 300 350
COLLECTOR CURRENT !Icl-A COLLECTOR CURRENT '!cl-A COLLECTOR SUPPLY VOLTAGE tVccl-V
Fig. 15- Typical rise time, fall time, and

Fig. 13-Typical storage time vs. collector Fig. 14- Typical fall time vs. collector cur- storage time vs. collector supply
current for 2N3584 and 2N3585. rent for 2N3584 and 2N3585. voltage for 2N3584 and 2N3585.
________________________________________________________________________ 99
POWER TRANSISTORS
2N3715,2N3716
Silicon N-P-N Epitaxial-Base High-Power Transistors

Features:
Rugged. Broadly Applicable Devices
For Industrial and Commercial Use • High dissipation capability
•. Low saturation voltages
The RCA-2N3715 and 2N3716 are epitaxial- They differ in voltage ratings and in the • Maximum safe-area-of-operation curves
base silicon .n-p-n transistors featuring high currents at which the parameters are con- III Hermetically sealed JEDEC TO-3ITO-204MA
gain and high current_ They may be used as trolled. Both are supplied in the steel JEDEC package
complements to the RCA-2N3791 and TO-204MA hermetic package. • High gain at high current
2N3792 respectively. These devices have a • Thermal-cycling rating curve
dissipation capability of 150 watts at case
temperature up to 25°C.
Applications:
.MAXIMUM RATINGS. Absolute-Maximum Values: • High-fidelity amplifiers
2N3715 2N3716
• v CBO ' 80 100 V
• VeEO('u,) 60 .80 V
• V EBO '
V
10 10 A
• Ie· TERMINAL DESIGNATIONS
4 4 A
• lB'
• PT
At Te ";2lte 150 150 W
At Te>2soe Derate linearly 0.86 - - - wte
• T,tg' T J . - - -65 to 200 - - °e
• TL
At distance ;;;'1132 in. (0.8 mm) from ,eating
plane for 10 , max. . ---235--- ·e
• In accordance with JEDEC registration data.
JEDEC TO-204MA
(See dlmenolonal . outline "A".,
~ ~ \
" t'\. '\.
'0
• '\. f./\
•
, '\ ~ r\'
::;::::-==::.::::,....- ~ 1\ \
50 ,.. ..c.OA LESS C
SO~HC.~~
1 2eo .. MC. I
~:'.::~IC. --,=::;J"::;,.L.-+~++~o-'\--I z.-'mlte
...u • u
..
~ \\ \
5m ..cTOD·C
5m ..e.TO D.C !:!
I-
z
~ ~
..a ~.8'1-----f----l-----l---~~",-H
~,
,\ \
.
u 0.8
1\\\
,
o -
..~ ~4.~---+---+----4---+-~~
~ o.al-----f----l-----l---+-.lol'r\lH-< ~ 0.6
~\
8 0.'
~
o.•,~__,,::-==_'=__::_:_:.l.-,_:-.....J---+--_I 0.'
CASE TEMPERATURE (TC)-ZS-C CASE TEMPERATURE (TCI.25"C
ICURVES MUST BE DERATED LINEARLY (CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE) WITH INetEASE IN TE MPERAT.URE '
1 1
D.' 0.'
'0 20 30 40 50
COLLECroR- TO-EMITTER VOLTAGE C VCE)~V
60 ro ~ ~ ~ ~
COLLECTOR-TO~ EMITTER VOLTAGE C't~-V 92CM-30111
92CM-30IIO
100 _____________________________________________________________________
~ ________________________________________________________ POWERTRANSISTORS
2N3715,2N3716
ELECTRICAL CHARACTERISTICS,
at Case Temperature (TC) = 2ft' C Unless Otherwise Specified

VOLTAGE CURRENT
CHARACTERISllC 2N3715 2N3716 UNITS
Vdc Adc
VCE V8E IC 18 MIN. MAX. MIN. MAX.
. ICEX
80 -1.5
100 -1.5
-
- -
1 -
-
-
1
rnA
.. ICEX, 60 -1.5 - 10 - - rnA " 50 15 100 125 150 I" 200
TC = 150°C 80 -1.5 - - - 10
CASE TEMPERATURE 1Tcl--C
.. ICEO
30
40
0
0
-
-
0.7
-
-
-
-
0.7
rnA
Fif!. 3 - Derating curve.
.. lEBO -7 0 - 1.0 - 1.0 rnA

100
,
.. VCEO(sus)b 0.2 0 60 - BO - V • ,
1
"\.
<~I
f \ ~.,
.. hFE
2
2
18
38
50
30
150
-
50
30
150
-
z
0
~
.'--
f-~ \
"
f'....oof::
..~>
;-- r- ~;
. VBE8
4
2
10
3
5
-
-
1.5 -
5 -
1.5 V
~
ii
w
~
'r-- ;-- .'." \ \
:' ~~9., I-
VBE(sat)8 5 0.5 - 1.5 - 1.5 V
, . ..~\\, ~*. ..
"*.~
.. , ~
~.1 r-
.. VCE(sat)8
5
10
0.5
2.0
-
-
O.B
4
-
-
O.B
4
V
IO
I 10
HIM.ER Of THERMM.C'ftU:S UN THOUSANDS)
102
,
10'
.. Ihfe l 10 0.5 5 - 5 - Fig. 4 - Thermal-cycling rating chart.

f = 1 MHz
.. fhfe 10 0.5 30 - 30 - KHz ... 360 COLLECTOR TO-EMITTER VOLTAGE !VCE}-4Y
~ CASE TEMPERATURE (Tel- 2S·C
.. hfe
;;300
f = 1 KHz
10 0.5 25 250 25 250 ~
~ 240't-+-t-1-ti=::t-+-t-t+-t-+-H-l
.. ~
Cob
VCB = 10 V
f = 1 MHz
0 - 250 - 250 pF i 180//
" r- . . . . . .
~ 120
.I Sib
40 2.7 - 2.95 - A
tp = ls I~ oor-t-~++r-+--r~t-~~~-l4-l '"
ROJC

- 1.17 - 1.17
b CAUTION: Sustaining voltages VCEO(sus)

°CIW
0.01
... 0.1 .
I
COLLECTOR CURRENT (I cl -
"
A
. ., 10
a Pulsed; pulse duration = 200 lotS, duty factor = 1.5%. and VCER(sus) MUST NOT be measured on
a curve tracer. Fig. 5 - Typical de beta characteristics for
both types.
e COLLECTOR-lO-EMITTER VOLTAGE (VeEI- 4 v

CASE TEMPERATURE lTe'. 25·C
% 1
~
: I--- I -
t- • /~ 1\
~
%
,1/
,
\
5
I
~
. .. . .. , ...
I
0.01
, 0.1
, I 10
BASE-TO-EMITTER VOL.TAGE (VeEI - v BASE-lO-EMITTER VOLTAGE 1V8EJ-V COLLECTOR CURRENT IIcl-A
92I:S-29007 9ZCS-Z900!i 92C$-2900""
Fig. 6 - Typical transfer characteristics for Fig. 7 - Typical input characteristics for Fig. 8 - Typical galn·bandwidth product for
both types. both types. both types.
________________________________________________________________________ 101
POWER TRANSISTORS
2N3771, 2N3772, RCS258
Hometaxial-Base, High-Power N-P-N Transistors

Rugged Silicon N-P-N Devices for Applications in Industrial and
Commercial Equipment Features:
• VCExlsusl at 3 A = 50 V min.
These RCA types are hometaxial base, regulator driver and output stages, dc-to· 12N3711)
silicon n-p-n transistors intended for a dc converters, inverters, and solenoid = 90V min.
wide variety of high-power, high-current (hammerl/relay driver service. (2N37721
applications. Typical applications for these • 15-A specification for:
All devices employ the popular JEDEC
transistors include power-switching cir- hFE. VBE, & VCE(sat)
TO-3 package; they differ in maximum
cuits, audio amplifiers, series- and shunt- (2N3711 )
ratings for voltage, current, and power.
• 10-A specification for:
hFE' VBE, & VCE(sad
MAXIMUM RATINGS. Absolute·Maximum Values:
(2N3712, RCS258)
2N3771 2N3772 RCS258
"COLLECTOR-TO-BASE VOLTAGE _ , __ , ,- VCBO 50 100 100 V
• Low saturation voltage with high beta
"COLLECTOR-TO-EMITTER VOLTAGE:
With -1_5 V (VBEI & RBE' lOOn __ , " VCEX 50 BO BO V
With base open. .. , . . . . . . . . . . . . . . . . . , - -" VCEO 40 60 60 V
"EMITTER-TO-BASE VOLTAGE _, __ _ - - - VEBO 5 7 7 V
"CONTINUOUS COLLECTOR CURRENT, ___ , __ , IC 30 20 20 A
"PEAK COLLECTOR CURRENT ,_ ICM 30 30 30 A
"CONTINUOUS BASE CURRENT __ _ IB 7_5 5 5 A
"PEAK BASE CURRENT , IBM 15 15 15 A
"TRANSISTOR DISSIPATION: PT
At case temperatures up to 2SoC 150 150 250 W TERMINAL DESIGNATIONS
At case temperatures above 25°C Derate linearly to 200°C - - -
"TEMPERATURE RANGE:
Storage & Operating (Junction) ... -65 to 200 DC
·PIN TEMPERATURE (During soldering):
At distance >= 1132 in. (0.8 mm) from seating plane for 10 s max. 230
·'n accordance with JEDEC registration data formal JS·6 RDF·2.
JEDECTO-3
(See dimensional outline "A ",J
·t
1100
TJ ••l.,l L J
TJ 1..l1l .• 20l.c
··
~ II
} 200
~
~
'.
"~>"
4.r('.. ~J.
-5
··
;: 100
:
~~~~~
·· · 1\ ""~ N r-
"" .. ~
""'" eoot:
&
'.
E
'" ~I~
E
\
0
, 'rl ~.
f
= · r--- ·'01.-\>••
\ ". .1:
S II ,
r\;;-~;:+--'m
104 , '/05 ,
Ii
HUMBER OF THERMAL CYCLES
• e la'
, .. I~I~" .~ . ..,.. . . .. . .
s •• of

i'.....
'2(:$-1,.,0111
4 "10 4
COLLECTOR CURRENT (Icl-A
"10
Fig. 1- Thermal-cycle rating chart for 2N3771, Fig. 3- Typical dc beta characteristics for
2N3772. Fig, 2 - Thermal-cvcle rating chart for RCS258. 2N3771.
COLLECTOR-lO-EMITTER VQLTAGEIVCE )-4'1 COLLECTOR CURRENT (leI/BASE CURRENT II BI· to

I
- I !I ! i
~
II:
160
140
I II i
~
~ 120
,I I
~ I I' I
;
~ BO
100
v:: -"'.:N C44 I
§
6' ,l'~""'"
II '~.~
v
!~ 40
I IIi
e <S·c
I I
g "
01
, . ..
I II ,I II P==:l,
1.0
. ..
.I " " " '21:5-1149,
COLLECTOR-TO-EMITTER S"'TUR4TIO~ VOLTAGE[VcE(SOI~-V
COLLECTOR-TO-EMITTER SATtltATIOfIt \(llT.AGErvcEltm~":V
Fig. 4 - fypical dc beta characteristics for Fig, 5- Typical saturation-voltage characteristics Fig. 6 - Typical saturation-volrage characteristics
2N3772 and RCS258_ for2N3771. for 2N3772 and RCS258.
102 _______________________________________________________________________
____________________________________________________________ POWERTRANSISTORS
2N3771, 2N3772,. RCS258
ELECTRICAL CHARACTER1STICS, At Case Temperature (TCi = 250C Unless Otherwise Specified
CHARAC- VOLTAGE CURRENT

V de Ade 2N3771 2N3772 RCS258 UNITS
TERISTIC
VCE VBE IC IB Min_ Max_ Min_ Max_ Min_ Max_
50 a - 2' - - - - rnA
ICBO
100a - - - 5' - 5
45 -1.5 - - - - - -
ICEX 50 -1.5 - 2 - - - - rnA
100 -1.5 - - - 5 - 5
30 -1.5 - 10 - 10 - -
ICEX
TC ~ 45 -1.5 - - - - - - rnA
1500 C 100 -1.5 - - - - - 10
25 0 - - - - - -
30 0 - 10 - - - -
ICEO - - - - rnA
50 0 10 10
-5 0 - 5 - - - -
* lEBO -7 0 "C" - - 5 - 5
rnA
4 30- 5 - - - - -
4 20- - - 5 - 5 -
* hFE 4 15- 15 60 - - - -
4 10- - - 15 60 15 60
4 S- - - - - - -
VCEX(sus)
RBE ~
100n
• -1.5 0.2- 50 - SO - SO - V
VCER(sus)
RBE ~ 0.2- 45 - 70 - 70 - V
lOOn
VCEO(sus) 0.2- 0 40 - 60 - 60 - V
4 15- - 2.7 - - - -
* VBE 4 10- - - - 2.2 - 2.2 V
4 S- - - - - - -
30e 6 - 4 - - - -
20- 4 - - - 4 - 4
• VCE(sat) 15- 1.5 - 2 - - - - V
10- 1 - - - 1.4 - 1.4
S- 0.8 - - - - - -
ISlb
tp ~ 1 s
60 - - 2.5 - 4.2 -
A
nonrep. 40 3.75 - - - - -
ES/b
L~40mH
RBE ~
-1.5 5 500 - 500 - 500 - mJ
100n
Ihlel 4 1 4' 16 4' 16 4 16
I ~ 0.05 (Typ) (Typ) (Typ)
MHz
* hIe
1~1 kHz 4 1 40 - 40 - 40 -
ROJC - 1.17 - 1.17 - 0.7 °C/W
* 2N-types in accordance with JEDEC registration data format JS-6 RDF-2. a VCB
• Pulsed; pulse duration =- 300 JJS, rep. rate =- 60 Hz, duty factor ~2%.
_____________________________________________________________________ 103
POWER TRANSISTORS
2N3771, 2N3772, RCS258
0.1 10
92CS-2855tRI
Fig. 7-·Maximum operating areas for 2N3771 and 2N3772.
"I
u
t!
I-
...a:.
Z
a:
:>
<.>
a:
g
...<.>
..J
..J
o
<.>
10 60 8 100
92CS-26449
Fig. 8- Maximum operating areas for RCS258.
104 ________________________________________________________________________
2N3771, 2N3772, RCS258

COLLECTOR-TO-EIoIITTER VOLTAGE IVCE)·4V ~ !! I
+ ·~liH L'l 1)1 ~ •• dl1 I I
BASE-lO-EMITTER VOLTAGE (VSE J-V BASE-lO-EMITTER VOLTAGE ("BE1-V

COLLECTOR-lO-EMITTER VOLTAGE IVeEI-V
Fig. 9- Typical transfer characteristics Fig. 10- Typical transfer characteristics for
Fig. 11- Typical output characteristics for
for 2N3711. 2N3772 and RCS258.
2N3771.
BASE-lO-EMITTER VOLTAGE \VB<:)- v COLLECTOR-lO-EMITTER VOLTAGE IVCE)-V

BASE-lO-EMITTER YOLTAGE {VSEI-V
Fig. 12- Typical input characteristics for Fig. 13- Typical input characteristics for Fig. 14- Typical output characteristics for
2N3771. 2N3772 and RCS258. 2N3772 and RCS258.
_____________________________________________________________________ 105
POWER TRANSISTORS
2N3773,2N4348,2N6259
Hometaxial-Base, High Current Silicon N-P-N Transistors

Rugged High-Voltage Devices for Applications Features:
in Industrial and Commercial Equipment • High dissipation capability-
120 W 12N43481. 150 W 12N37731. 250 W 12N62591
• 5-A specification for hFE. VeE. &: VCE(sad (2N434S)
These RCA types are hometaxial-oose silicon n-p-n tran- • 8-A specification for
converters, inverters. and solenoid (hammer)/relay driver
sistors intended for a wide varietY of high-voltage high· service. hFE. "BE. & veE I.." 12N3773. 2N62591
current applications. Typical applications for these tran- • VCEX-
These devices employ the popular JEDEC TO-3 package;
sistors include power-switching circuits, audio amplifiers, 140 V min 12N43481. 160 V min 12N37731
they differ in maximum ratings for voltage, current, and
series- and shunt-regulator driver and output stages, dc-to-dc 170 V min (2N6259)
power.
• low saturation voltage with high beta
MAXIMUM RATINGS, Absolure-Maximum Values·
2N4348 2N3773 2N6259 c
'~
·COllECTOR.TO-BASE VOLTAGE VCBO 140 160 170 V
COLlECTOR·TQ-EMITTER VOLTAGE
.. With base open VCEO 120 140 150 V
With reverse bias (VSE} of -1.5 V VCEX 140 160 170 V
"EMITTER.TO·BASE VOLTAGE. VEBO V
-COLLECTOR CURRENT'
Ie
Continuous 10 16 16 A
Peak. 30 30 30 A
-BASE CURRENT: I.
ContinUQUS A JEOEC TO·3
Peak 15 15 15 A (See dimensional outllna "An.)
-TRANSISTOR DISSIPATION: PT
At ca5e temperatures UP to 2SoC . 120 150 250 W
At case temperature! above 25°C
Derate linearlv tQ 20(,oC
-TEMPERATURE RANGE:
Storage & Operating {Junction) .. ~ -65 to +200 -----+- °e
-fiN TEMPERATURE (During Solderingl:
At distances.2:,1/32 in. (O.B mml from case for 10 s max. 4---- 230 -------+ °e
In accordance with JEDEC registration data format (JS·6, ROF·2).
Fig. 2· Thermal-cycle rating chart for 2N3773.

100
. ··
r T J NAX ·200~c
1'-,
~.,,r.
1
!
· f',.
~~I
0
~
\
>"
~
;;
~
, ~ 1\ J'f~>~.
~ 1\ IJ
10
~,
~
8
l~ ~ . ..R, , .I .. . ,
4
;.
, 10
NUNBER QF THERMAL CYCLES
Fig. 3 - Thermal-cycle rating chart for 2N4348.
~ 100 Ht-f\t-'>'Ij---~,
.
10'
NUUBEFI OF THERI,4AL CYCLES
Fig. 1 - Maximum operating areas for 2N3773. Fig. 4 - Thermal-cycle rating chart for 2N6259.
106----~ __________________________________________________________________
2N3773,2N4348,2N6259
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) ~ 2SOC Unless Otherwise Specified
TEST CONDITIONS I LIMITS
CHARACTERISTIC SYMBOL VOLTAGE CURRENT

V de A de
I 2N4348
I 2N3173
I 2N6259
UNITS
VCE VBE IC IB Min. Max. Min. Max. Min. Max,
ollector-Cutoff Current:
With emitter open, VCS=140 V ICSO - - - 2 - - rnA
Wi th base·emi tter 120 -1.5 - 2 - - - -

junction reverse·biased ICEX 140 -1.5 - - - 2 - - rnA
150 -1.5 - - - - - 0.2
With base-emitter 120 -1.5 - 10 - - - -
junction reverse-biased ICEX 140 -1.5 - - - 10 - - rnA
, ndTC=150 0 C 150 -1.5 - - - - - 4
With base open

100 - 200 - -
rnA
ICEO 120 - - 10 - 2
* Emitter-Cutoff Current IESO -7 0 5 5 2 rnA
4 5' 15 60 -
4 S' - 15 60
* DC Forward Current
hFE 2 S' 15 60
Transfer Ratio
4 loa 10 -
4 16a 5 10
Sustaining Voltage:
VCEXlsusl 1.5 0.1 140 160 170 V
With base-emitter junction
reverse·bl,sed IRSE - 100H)
With external base-ta·emitter
VCERlsusl 0.2" 140 .150 160 V
. resist,nce IRSEI- 100H
With base open VCEOlsusl 0.2' 0 120 140 150 V
4 5' 2
4 8a 2.2
* Base-to-Emltter Voltage VSE V
2 S' - - - 2
4 loa 3 -
5a 0.5 1
* Collector-ta-Emltter sa O.S 14 1
V
Saturation Voltage VCElsati 10" 1.25 - 2
16" 3.2 - 4 2.5
Second-Breakdown
Collector Current
IS/bb A
With base forward-biased and SO 15
1'5 nonrepetitive pulse 100 1.5 - 2.5
Second-Breakdown Energy
With base reverse-biased and ES/be -1.5 2.5 0.125 0.125 0.125 J
L = 40 rnH. RSE 100110
* Magnitude of Common·Emitter,
Small ·Signal, Short-Circuit, 1 4 - 4 4
Ihfel 4
Forward Current Transfer
Ratio If = 50 kHzl
- Common-Emitter. Small-
Signal, Short·Circuit,
hfe 4 1 40 40 40
Forward Current Transfer
Ratio (f :::; 1 kHz)
Thermal Resistance ,.
ROJC 1.46 1.17 - 0.7 °C/W
Junction·to-Case
-In accordance with JEDEC registration data format JS 6 ADF·2.
, apulsed; pulse duration 300J,l.s, rep. rate· 60 Hl.
b ISlb is defined as the current at which second breakdown occurs at a specified collector voltage with the emitter base lunction tor war
transistor operation in the active region.
CESJb is defined as the energy al which seco~d break"down occurs under specified reverse·blas conditions ES/h 1/2L 12 where L is •.
leakage inductance and I is the peak collector current.
_____________________________________________________________________ 107
POWER TRANSISTORS
2N3773,2N4348,2N6259
0,1 I 2 4 6 9 10
COLLECTOR CURRENT (ICI-A
!z
...
II:
II:
Fig. 7 - Typical dc beta characteristics for
::>
u 2N3773.
II:
~ 2\.
:oJ
..J
..J
0 ~2
COLLECTOR. TO-EMITTER VOLTAGE N CE )' 4 v I II
u
~
IIII II I!
. I:
18
8 ~-
it!: 16
IIII II
6 It 14 1"-. ~.SE' TEMPER.+URE' (T~I'I2'·C.L,-
I'
4 ~.
~ 12 , ,
' ,
;' ~
i l , 25·C Iii
2 ~.-
0.1
10 6 B 100 200
r
~ 2
./
." 0.1
, ."
I'l...
I
~
,
~
.I':...
10
2
1
I
!i
468
100
COLLECTOR CURRENT (I.C)-A
COLlECTOR-TO- EMITTER VOLTAGE (VCE)-V
Fig. 5 - Maximum operating areas for 2N4348. Fig. 8 - Typical dc beta characteristics
for 2N4348.
COL.L.ECTOR-TO·[I,IITTER VOLTAGE (VCE)-2\1
~200
0 . /.'" IT!~,,,JW" '''C:':5~C

~ 160
f\
~
~ 120
l.--r----'
r.2:5·C
~
c( ! :2 eo
.~
'0
I 10 ~
; 40
" .'\
~
!j
I-
....It:z
g
0.01
0
2 ... , . ..
'0.1 'I
COLLECTOR CURRENT tIel-A
'10 2
12e"I.",
2 ... I:-:-
It: Fig. 9 - Typical dc beta characteristics
::;)
0 for2N6259.
It:
0
I- I ,t:,' .>
....
0
">1'0:' 1'.1 I ;::
..J
..J
0
," !;:'i'luR1'itS . !~;, 'lir I
>1.··.
I:
0 3> •
rt; i:
i· 1 ': ..
I Ii· I i --
I
l_ J ,
.• 1 I":.::'
,
',0:: I I .... .':: ':.'
. ....
,.
F
>, .... ,: .. 1':" •••
. •
2·
2 4 6 8 10 2 4 6 8 100 2
y!B , ,II/
"
COLLECTOR -TO- EMITTER VOLTAGE (VCE)- V

Fig, 10 - Tvpical transfer characteristics for
92CS-19S61
Fig. 6 - Maximum operating areas for 2N6259. 2N3773.
108 __________________________________________________________________
2N3773,2N4348,2N6259
O!i I I !i Z Z.~ 1 l!i

I I.~ 2: CCLLECTOR-TO-EIoIITTER VOLTAGE IVCEI-V
BASE·TO-[Ir,IITTEA VOLTAGE (VBEI-V BASE-to-BunER VOLTAGE ("'e(l-v
ntS'I~~~1
Fig. 11 - Typical transfer characteristics Fig. 12 - Typical transfer characteristics for Fig. 13 _. Tvpical output charac'teristics
for 2N4348. 2N6259. for 2N3773.
CASE TEMPERATURE ITc I' 25'C VeER CASE TEMPERATURE ITe )'2'·C
ffi> I::,...
~I ?"'G2
u 12, ~-:;
~ "C[O
~r
1"""'J,>
:,;,1
SASE CURRENT Is' 600 mA
~ to
BASE CURRENT lIs ).'00 In,",
vCER
"'<" ~ 10
1.'
j~140 ......
e>
,"
"::::E"'I:5Q ".
I""0,
~~
",.A
f'...
II VC[O ."
T
I 2: :5 3.' I 15 2: 2:.!i :5 3.5
COLLECTOR-lO-EMITTER VOLTAGE l"eEI-V IOC II< 10K COLLECTOR·TO-EMITTER VOLTAGE (Vcr/-V
I2CS-I"5~ [X'T(RNAL BASE-tO-EMITTER RESISTANCE IRe£)-;;~S_I9'/lO
t2cS-ltSS&
Fig. 15 - Sustaining voltage as a function of

Fig. 14 - Typical output characteristics for Fig. 16 - Tvpical output characteristics for
base-to-emitter resistance for all
2N4348. 2N6259.
types.
108 COI...LECTOII CUFIRENTll c )/8ASECURRENTI!e)' 10 lOa COLLECTOR CURRENT(Icl

10:foLLEeTOR CURRENT Ie/BASE CUFIRENTla'lO
BASE CURRENT (Ie' • IC
5i 2 CASE TEMP.(t )-25-(: /

1
-§
·CASETE~PERATuJEITC!'Z~' J~t/
z
V/
~ Y'< ",·c /./ "",.,

~ , IV
~'.Ia ·
··,
~
~ /I
~ ~ //
91 l :/ ~/ 6 II i ..
O~OLLECTOFI_TO_EMJTTEA SATUR~T\ON VOL TAGE [Vce:hAI~2~s~nOI

6 II
001
2
I I
"6 B
01
2
COLLECTOR-To-EMITTER SATIJItATION VOLTAG["

"6B
I
Z ,,(,.
[VC~.g'!1-;2~S_l~OO
10
0'
,
{I
. .. ,
coOl~~eTOR-TO-E~ITTER SATURAT~~" VOLTAGE [VCEhg,~-V
. .. I
Fig. 17 - Typical saturation-voltage Fig. 18· Typical saturation-voltage Fig. 19 - Typical saturation-voltage
characteristics for 2N3773. characteristics for 2N4348. characteristics for 2N6259.
BA5[-TO·EMIT'nR VOlTAGE (VBEI-V BASE-YO-EWITTER VOLTAGE (VBEI-VuCS_IISU
Fig. 20 - Typical input characteristics for Fig. 21 - Tvpical input characteristics for Fig. 22 - Tvpical input characteristics for
2N3773. 2N4348. 2N6259.
________________________________________________________________________ 109
POWER TRANSISTORS
2N3791, 2N3792
Silicon P-N-P Epitaxial-Base High-Power Transistors

The RCA-2N3791 and 2N3792 are epitaxial- pation capability of 150 watts at case • Maximum safe-areas-of-operation curves
base silicon p-n-p transistors featuring high- temperatures up to 25°C • Hermetically sealed JEDEC =rO~04MA
gain at high current_ They may be used as package
They differ in voltage ratings and in the
complements to the n-p-n types 2N3715 and currents at which the parameters are con- • High gain at high current
2N3716, respectively_ These devices are in- trolled_ Both are supplied in ·the steel JEDEC • Thermal-cycling rating curve
tended for medium-speed switching and TO-204MA hermetic package.
amplifier applications and feature a dissi- APPLICA TlONS:
Maximum Ratings, Absolute-Maximum Values:
2N3791 2N3792
• VCBO '
-60 -80 v • Solenoid drivers
• vCEO ' -60 -80 v
• VEBO ' -7 -7 V
-10 -10 A TERMINAL DESIGNATIONS
• IC'
• ICM -10 -10 A
• lB' -4 -4 A
• PT
T C ';;25°C 150 150 w
TC > 250 C derate linearly 0.86 wtc
• T J • Tstg . - - - -65 to 200 - - - °c
JEDEC TO-204MA
(See dimensional oulllne "A"_)
. " '\.'\
-10
6
"\.
'\.
\. \
\/\
4
'\ h '\ \
5O,.seco~
'"Iu 2
50 Jllec. OR LESS
250,.,",
~~.~~K'---=-~~~~-+~~~+-+-4-~
!'"u 2_lm ..c~
~:::~.~ ~ ~\
~~
!im"cTODC~
!:! !:!
...z 5m,.c.mD·C ...
. ~
'"~-I i-------r-----~------+-----~~~4r4 §-I
\ \
~ O.81------t------+-------I----f'~\\_+_1 ~ 0.8
~ 0.1$ 1----t------+-------I----+--"\~t\-1
0 ~
~
~~
0.6
8~ t------+-----+------t------+--~r\\1
d ... 0.4
8
~
o.,~==='::==c_:::-':-=.,__--'------+---__l 0.2
CASE TEMPERATURE (Tel- ZS·C CASE TEMPERATURE ITCI-2S·C
ICURVES MUST BE DERATED LINEARLY (CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE) WITH INjREASE IN ,TjMPERATURE/
-0.1 -0.1
-10 -20 -30 -40 -so -GO -20 -40 - 60 -BO -100
COLLECTOR-lO-EMITTER VOLTAGE IVCE)-V COLLECTOR -TD- EMITTER VOLTAGE ('t:E)-V g2eN-lOlll
9zeN-3o.laO

110 ________________________________________________________________________
__________________________________~----------------------POWERTRANSISTORS
2N3791, 2N3792
ELECTRICAL CHARACTERISTICS, at Case Temperature

(TC) = 25°C Unless Otherwise Specified
VOLTAGE CURRENT
CHARACTERISTICS Vdc Adc 2N3791 2N3792 UNITS
VCE VBE IC IB Min. Max. Min. Max.
-60 1.5 - - - -1 - -
* ICEX -80 1.5 - - - - - -1
mA
TC=150°C
-60 1.5 - - - -5 - - H ~ " 100 125 I!M) 175 200
-80 1.5 - - - - - -5 CASE TEMPERATURE ITc)--C
-30 - - - -10 - -10

* ICEO -40 - - - -10 - -10
rnA Fig. 3 - Derating curve.
* lEBO 7 - - - -5 - -5 rnA 100

,
* VCEO(sus)b
-2
-0.2
-1 -
0 -60
50
-
150
-80
50
-
150
V ~
fz
I
·
- - - 0 'r-r-
* hFE a -2 -3 30 30
~
l"
~!
-4 -10 - 4 - 4 - ~
r-r-
a "I
;,
-2 -5 - - -loB - -l.B ~
'r- r- ,:'
* VBE -4 -10 - - :"4.0 - -4.0
V
~
* VBE(sat)a -5 -0.5 - -1.5 - -1.5 V
10
-5 -0.5 - -1 - -1 I 2 4 . "0 2 "II "02 Z " . "05 Z
* VCE(sat)a
-10 -2.0 - -4 - -4
V Nl.IIIIBER Of THERMM.CYCU:S liN THOUSANDS)
* Ihle -10 -0.5 - 30 - 30 - KHz

Fig. 4 - ThBrmal·cycling rating chart.
* hIe 1= 1 KHz -10 -0.5 - 25 250 25 250

~ 10. COLLECTOR-TO·ENITTER VOLTAGE IVCE} __ 4 V r-
* Ihle l 1= 1 MHz -10 -0.5 - 4 - 4 - &
, '
ISib tp = 15 40 2.7 - 2.95 - A

~ ·: c~£
C:-r-.'~..
I,
10'
...~••t!!.;
* Cob , t:~'....
VCB = 10 V 0 - 500 - 500 pF Ii r""
~·c f"'; ""-"'~~' ';- t-
1= 1 MHz I i
I ,···
10,
* ROJC - 1.17 - 1.17 °C/W
*
a
In accordance with JEDEC registration data.
Pulsed; pulse duration = 200 IlS, duty factor = , .5%.
b CAUTION: Sustaining voltage, VCEO(susl. MUST NOT be measured on a curve tracer.
~
-0.01
. ... , .. , .. . ..
.g.1
, ·1
C:OLLIECTOR CURRENT llel-A
, ·10
, -100
Fig. 5 - Typical de beta characteristics for both types.
COLLECTOR-TO-EMITTER VOLTAGE (VCEI.-4V 25 COLLECTOR-TO-EMITTER VOLTAGE IYCEJ--4 Y

CAS! TEMPERATURE IT )-25-C
%
a
.~ 20~~ __ ~~~~~f=Fr~~__+-t1rl
g 151-----t---t-/-j('Tt---t---t---t-tt---i"<:-r--t-ti
~
~ 101-----t---t-H-t---t---t-t-tt----t--T'ltii
~
-z
! Ol-----t---t-H-t---t---rrt-tt----t--i-rii
Q. -0. -I
BASE-TO-EMITTER WLTAGE
-I.!II
'VaE)- V
-2
BASE-To-EMITlVI VOLTAGEtYB£l-Y g2C$-li582
=
-0.01 -0.1
COLLECTOR CURRENT I%c I-A
. .. -I
, ..-10
'"''
Fig. 7 - Tvp'"CII.( input characteristics for both types. Fig. 8 - Typical gain-bandwidth product for both types.
Fig. 6 - Typical transfer characteristics for both types.'
________________________________________________________________________ 111
POWERTRANSISTORS _____________________________________________________
2N3878,2N3879,2N5202,2N6500,40375
Features:
High-Speed, Epitaxial-Collector • Maximum-area-of-operation curves for de and pulse operation
Silicon N-P-N Transistors •

•
Rated for safe operation in both forward- and reverse-bias conditions
High sustaining voltage .
• Totall8turated transition time leu than 1 ps
For High-Speed Switching and Linear·Amplifier Applications for 2N3879,.2N5202, and 2N6500
RCA.2N387B. 2N3879, 2N5202, and 2N650ae are epitaxial Typical applications for these transistors include: low-distor- TERMINAL DESIGNATIONS
silicon "-p."
transistors. The 2N3878 is im amplifier type tion power amplifiers. oscillators, switching regulators, series
E([)':
intended for audio-, ultrasoniCo, and radio-frequency circuits. . regulators, converters, and inverters.
c
-Types 2N3879. 2N5202, and 2N6500 are switching transistors
intended for use in high-current, high-speed switching circuits.
Type 40376 is a 2N3878 with a factory-attached heat radiator; • Formerlv RCA Dey. TVpe Nos. TA2509. TA2509A. TA728S. 'and
TA8932. respectively.
it is intended for printed circuit-board applications.
m
JEDECTO-88
MAXIMUM RATINGS, Absolute-Maximum Values: B 2N3B78. 2N3879. 2N5202. 2N6600
2N3878 tiCS-it?'"
40375 2N3879 2N5202 2N6500
·COLLECTOR·TO·SASE VOLTAGE. VCBO 120 120 100 v see dlmenslona' outline "N".)
120
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE:
With external base·to·emitter resistance IRse) = 50 n. VCERlsusl 65 90 75' 110· v ® 'ik.-
With base open.
·EMITTER·TO·SASE VOLTAGE.
Vce'ohusl
VERO
50' 75' 50
6
90' v
V
e z e
·CONTINUOUS COLLECTOR CURRENT
'e A I JEDEC TO-68 with ....t Rad_tor
'PEAK COLLECTOR CURRENT. Ic"M 10 10 A (j1 4037.
·CONTINUOUS BASE CURRENT.
·TRANSISTOR DISSIPATION. '. 2 A I.
IHEAT RZoIATORI WCS lI'l!I.
(See dlmenllona'
outline "0".)
At case temperature ITCI = 25 0 C 3512N38781 35 35 35 w
At case temperatures abo\le 2So C Derate linearly at 0.2 wfJc
At ambient temperature IT AI = ~50C . 5.B 140375) w
For other conditions . See Figs. 1,2,3, and 5
·TEMPERATURE RANGE:
Storage & operating !Junction) . ··65 to 200
·PIN TEMPERATURE;
1/32 In. 10.8 mml from seating plane for 10 s max. 235 235 235 235
• '" In accordance with JEOEC registration data formal JS-6 ROF·2 12N387BI; JS·6 RDF·1 12N3879. 2N5202. 2N6500).
EI'F£CTlYECASETEliP ORCA.SETE.... ('EffOR Tc)-°C mU;t!I
Note: Use ambient temperature for derating 40375.
Fig. 2· Dissipation derating for all types,
.
'o •
VCEOCMAlC.)o50V
Z 4 I; I 10 It 4 e 1 100
COLLECTOR-TO-EMITTER VOLTAGE CVCEI-V
Fig. 3· Maximum operating areas for 40375.
COLLECTOR-TO-IMITTER YOLTAGEtIt:E:1-1V
5
~
300
. ~2.00
0.5 1.5
BASE-TO-EMITTER VOLTAGE !VBEI-V
92CS-2:57!5!5AI '~-13221'
Fig. 4 • Typical input characteristics

Fig. 1 • Maximum o/Jeratingareas for 2N3878. for all types.
112 ______~----__-----------------------------------------------------
------__________________________________________________ POWERTRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500, 40375

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2SOC unless otherwise specified:
VOLTAGE CURRENT 2N3878 2N3879 2N5202 2N6500
V de Ade 40375
VCE VBE IC IB Min. Max. Min. Max. Min. Max. Min. Max.
Collector Cutoff Current: 100 -1.5 - - - - - 10 - -
With base-emitter junction reverse- 110 0 - - - - - - - 5

biased 120 -1.5 - 25 - 25 - - -

reverse·biased and T C = 150°C
ICE V
100
110
40
-1.5
0
0
-
-
4
-
5'
-
-
4
-
5
-
-
10
-
- -
10
rnA
With base open ICEO rnA

70 0 - - - - - 5
· Emitter Cutoff Current
Collector-tn-Emitter Sustaining
IEeO
-6
-7
-
-
-
10
-
- 10
- 10
- - 25
rnA
Voltage VCEOlsus} 0.2 0 50~ 75a 50a 90~

With base open
V
resistance (RBE) = 50 12 VCER(sus} 0.2 0 65 a 90· 75 a 110·
1.2 4u 10' 100'

2 0.5 u 40' 200'
DC Forward-Current Transfer 2 3h 15' 60'
RatiO
hFE 2 41> 8' 12' 100 '
5 4u 20 . 20 80
5 051> 50' 200' 40
, Collector-to-Emltter 3" 03 15
VCEls.,1 V
Saturation Voltage 4" 04 2 12 12
· Base-la-Emitter Voltage VeE 2 41> 25 V
· Base-ta-Emttter Saturation
Voltage VSE's.,1
31>
41>
03
04 2 2
25
V
Coltector-to-Base Output
Capacitance: COb 175 175 175 175 pF
If = I MHz, Vce ' 10 VI
Second Breakdown Collector Current
With base forward-lJlased and 'S b 40 750 500 400 400 IliA
1-s nonrepetltlve pulse
With base reverse·blased and
c
ReE = 50 n, Ves = -4V ESlb rnJ
At L = 50"H 04
At L = 125"H I I O~
· Magnitude of Common Emttter,

Small·Slgnal, Short·Clrcult,
Forward-Current Transfer hel 10 05 4 4 6 6
Ratlo:(f = 10 MHz}
· Common-Emitter, Small·Slgnal,
Short-Circuit, Forward-Current
Transfer Ratlo:(f = 1 kHz)
h fe 30 0.1 40
Thermal Resistance: 2N3878

Junction-la-case ROJC I5 5 5 5
°C/W
40375
Junction-to-amblent ROJA
130
• In accordance WIth JEDEC regIStratIon data format J5-S RDF·2 b Pulsed, pulse duration - 300 ps, duty factor ~ 2 %.
(2N38781; JS·S RDF·l (2N3879. 2N5202. 2NS5OOL C ES/b is defined as the energy at which second breakdown occurs
a CAUTION: Sustaining voltages VCEo(susl and VCERUSUS) MUST under specified reverse-bias conditic:)Ils_ ES/b = 1/2U 2 where L is a
NOT be measured on a curve tracer. series load or leakage inductance and I is the peak collector current.
________________________________________________________________ 113
POWER TRANSISTORS
2N3878,2N3879,2N5202, 2N6500, 40375

TRANSITION AND STORAGE·TlME CHARACTERISTICS FOR SWITCHING TYPES,At Case Temperature (T.-cJ = 25°C:
TEST CONOITIONS LIMITS
VOLTAGE CURRENT
CHARACTERISTIC SYMBOL Vdc Adc UNITS
2N3879 2N5202 2N65oo
VCC IC 'B Min. Max. Min. Max. Min. Max.
Saturated Switching 30 3 0.3a - - - - - 40

Time 'd 30 4 0.4a - 40 - - - -
Delay time
30 4 O.Sa - - - 40 - -
30 3 0.3a - - - - - 400
· Rise time 'r 30

30
4
4
O.4a
O.Sa
-
-
400
-
-
- 400
- -
-
-
- ns
30 3 0.3a - - - - - 1000
Storage time 's 30 4 0.4a - 800 - - - -
30 4 O.Sa - - - 1200 - -
30 3 0.3" - - - - - 500
· Fall time 'f 30

30
4
4
0.4a
O.S"
-
-
400
-
-
- 400
- -
-
-
-
• In accordance wi,h JEOEC registra,ion da'a forma' (JS·6. ROE·ll
COLLECTOR-TO-EMITTER VOLTAGE (VeE)- 10 v

CASE TEMPERATuPE !Tela ..SoC
"I 4 6 SO.! 4 6 8 I 4 6 8 10
u COLLECTOR CURRENT (I.cl-A
!:!
I-
Z
Fig. 6 - Typical gain-bandwidth product
'"::>'"
0:
for all types.
U
'"
o
~
175 COLLECTOR-TO-EMIT"TER VOLTAGE ('ICE) -2 V_
"0 ,,-=::.,.,~--
i
:l
8 '" ' , -. - \~ [
loof-+-H+t--+-- i
6 8 10 6 8 100
COll ECTOR- TO-EMITTER VOL TAGE(VCE)-V COLLECTOR CURRENT lIc1-A
92CS-23756
Fig. 5· Maximum operating areas for 2N3879, 2N5202, and 2N6500. 2N6500.
114 __ ~ _________________________________________________________________
--------__________________________________________________ POWERTRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500, 40375
0.' .. ,
SASE-TO-EMITTER VOLTAGE (VSEJ-V • '0
COLLECTOR-tO-EMITTER VOLTAGE (VCE)-V COLLECTOR-tO-EMITTER VOLTAGE ('-'e[l-II
Fig. 8· Typical transfer characteristics Fig. 9 - Typical output characteristIcs tor Fig. 10· Typical output characteristics for
for all types. 2N3878, 2N3879, 2N5202 and 2N6500.
40375.
CASE "~PERATUR" .".
~
I, +
,I
COLLECTOR CURRENT Uel-A COL.LECTOR CURRENT tIel-A

COLLECTORCURREHT('d-A
Fig. II· Typical saturation·voltage
characteristics for 2N3878, Fig. 12 . Typical saturation-voltage Fig. 13 - Typical saturation·voltage
and 2N3879. characteristics for 2N5202. characteristics for 2N6500.
CASE TEMPERATURE (Tel • 20·C ~~~ :J~~~iT~8G:ATE -1OOOPUt.SfS/s CASE TEMPERATURE ITel- 20·C
CASETEUPERATlJREITcl"ZS·C
200 IS,· -tez"Ic/IlF[
20
20 t"p. 'fIf.'
, ,
COLLECTOR CURRENT tIel-A. COLLECTOR CURRENT lIel-1t. COLLECTOR CURRENT tIel-A
Fig. 14 - Typical turn-on time for Fig. 15 - Typical storage time for Fig. 16· Typical fall time for 2N3879,
2N3879, 2N5202, and 2N3879, 2N5202, and 2N5202, and 2N6500.
2N6500. 2N6500.
_____________________________________________________________________ 115
POWER TRANSISTORS
2N4036, 2N4037, 2N4314, 40391, 40394
Medium-Power Silicon P-N-P Planar Transistors

Features:
General-Purpose Types for Industrial and Commercial Applications
2N4036 are p-n-p 1
\ 2N21 02
These RCA types are .double-diffused, quencies. In addition, the 2N4036. is use· J
• 2N4037 complements of l2N3053
epitaxial-planar, silicon p-n-p transistors; ful in high·speed saturated switching ap·
• Gain-bandwidth product
they differ in breakdown-voltage ratings, plications.
(tTl = 60 MHz min.
leakage·current, and saturation character·
Types 2N4036, 2N4037, 2N4314, and • High breakdown voltages
istics. • Maximum·area·of-operation curves
41503 are supplied in the JEDEC TO·39
The 2N4036, 2N4037, 2N4314, 40391, hermetic package. The 40391 is a 2N4037 • Planar construction provides low
and 40394 transistors are intended for a with a factory attached heat radiator, noise and low leakage
wide variety of small·signal medium'power intended for printed·circuit·board appli· • Low saturation voltages
applications. With a minimum gain·band· cations. Type 40394 is a 2N4037 with a • High pulsed beta at high collector
width product (fTI of 60 MHz, these factory·attached diamond·shaped mount· current
devices provide useful gain at high fre· ing flange_ • Fast switching (2N40361
MAXIMUM RATINGS. Absolute Maximum Values:

-COLLECTOR-TO·BASE VOLTAGE
COLLECTOR·TO-EMITTER SUSTAINING VOLTAGE'
Veao
2N4D36
~90
2N4037
40391, 40394
-60
2N4314
-90 V
,fj",." 92C5-21512
JEDEC TO·39
2N4036, 2N4037
2N4314
With 1.5 volts (VeE) of reverse bias ....•......•.... VCEV(sus) -85 -60 -85 V (See dlmenllon.1 outline "C".)
With external base·to·emitter resistance ....... .
IRBEI C; 20011 •...... _...... _•...•.•. _... _.. VCER(sus) -85 -60 -B5 V
With base open .........................•.•.... VCEO(sus) -65 -40 -65 V B C
. (FLANGEI
~
-EMITTER-TO-BASE VOLTAGE ..... _. _..........•.. -7 -7 -7 V .
-COLLECTOR CURRENT ........................ .
VE80
IC -1.0 -1.0 -1.0 A
.
-BASE CURRENT ..................... _...... ..
-TRANSISTOR DISSIPATION,
IB
PT
-0.5 -0.5 -0.5 O' 0
At case temperatures up to 2SoC . . . . . . . . . . . . . . . . . . 712N40371 W JEDEC TO-39 with Flange
71403941 w 920-27511 40394
At free-air temperatures up to 25°C .... , ......... . 3.5140391) w
1I2N4037,403941 w (See dlmenolonal oulllne "E".)
At temperatures above 25°C Derate linearly to 200°C _ _ _
-TEMPERATURE RANGE,
Storage & Operating (Junction) . . . . . . . . . . . . . . . • . -65 to 200 DC HEAT
~
• LEAD TEMPE RATU RE (During soldering): .•......... c RAO:TOR
At distance :> 1/16 in. Cl.58 mml
from seating plane for 10 s max. . .....•....•..... 230 DC
.," accordance with JEOEC registration data format 1.15-6 RDF·l 2N4036; JS-9 RDF·2 2N4037. 2N4314J. 0 0 0 2
B MOUNTING
o 0 TABS
E
92CS-Z7:5IB
JEDEC TO-39 with Heat Radiator

40391
(See dlmenolonal oulllne "D".)
10 COLLECTOR-TO-BASE VOLTAGE CVCBJ--60V
iY.i~I,f,T~M~Rf.rJllfTRA ~~Ll:~£ ~).-2 V
1Io~--+----r---+---+--~~~~~
ii "2 -lOV
8. !!r
III I
"- ..tiN·d·
=!eo ~.'T, ~I.
~~
i= i.-" I-"'" \
if"
f ---
r-..
~ 104
~~ 20
\\ a 16""+----hi~+---+----t----!----+------1
-0.1
... . - .- . - -.
-I -10
COL. LECTOR CURRENT IICI- mA
-100
-0.1
I •••
-1.0
:I ... ,
-10
., ....
-100
, ....
-1,000
200
COLLECTOR CURRENT 11: e '-IIIA

Fig.3 - Typical callectar-cutaff current vs.
Fig. 1- Typical de-beta characteristics far Fig.2· - Typical de beta characteristics junction temperature far 2N4036.
2N4036, 2N4031 and 2N4314. far 2N4031 and 2N4314.
116 ________________________________________________________________________
POWER TRANSISTORS
2N4036, 2N4037, 2N4314, 40391, 40394

ELECTRICAL CHARACTERISTICS, af Case Temperature (T cJ: 2SOC Unless Otherwise Specified

CUR. 2N4037
CHARACTERISTIC VOLTAGE
SYMaOL RENT 40391 UNITS
V de 2N4036 2N4314
rnA de 40394
Vc.a VCE VeE IC MIN. MAX. MIN. MAX. MIN. MAX.
Collector Cutoff Current: -15 ~A
With emitter open

ICBO -90 -D.'· - mA
-60 -OD2 ·0.25" - -025- ~A
With base open ICEO -30 -05- -5" -5" ~A
reverse biased
ICEX
-85 1.5 -100" - mA
TC -150·C -30 1.5 -0.1· -
Emitter Cutoff Current lEBO
-0.1· - mA
- -0.02 - -I" -I" ~A
Collector-ta-Sase Breakdown
VIBRICBO -0.1 -90 -60· -90" V
Voltage liE' 01
Emitter-ta-Base Breakdown
VIBRIEBO -7 -7 -7 V
Voltage liE' -0.1 mAl
Collector-la-Emitter
Sustaining Voltage:
With base-emitter junction VCEVlsusl 1.5 -100 -85' -60' -85- V
reverse biased
emitter resistance VCER(sus) -100 _85· _60· -85' V
(R BEl';200n
-30 V
With base open VCEOlsusl
-100 -65' -40· -65'
• Collector-ta-Emitter
Voltage (lB:: -lSmA)
VCElsatl -150 - -0.65 - -1.4 -1.4 V
Base-ta-Emitter Voltage VBE -10 -150 -1.1 -15- - -,.5- V

• Base-la-Emitter
Voltage liB' -15mAl VBElsatl -150 - -1.4 V
-2 -150 20 200
-10 -0.1 20
• DC Forward-Current
hfE -10 -1.0 15 15
Transfer Ratio
-10 -150· 40 140 50 250 50 250
-10 -500· 20
Common-Emitter, Small-Signal
Short-Circuit, Forward-
hf. -10 -50
lat f ' 20 MHzl
• Magnitude of Common-Emitter,
Small-Signal. Short-Circuit,
Forward-Current Transfer
Ratio lat f ' 20 MHzl
I hf·1 -10 -50 10 10
Collector-Base Capacitance
latf"MHz.IE'OI Ceb -10 30 - 30" 30" pf
Input Capacitance Cib 0.5 0 90 90 90 pf

• Sat_ Switching Timec
Rise time t, -30 -150 70
Storage time Is -30 -150 600
Fall time tf -30 -150 100 ~s
Turn-on time ton -30 -150 110
Turn-off time toff -30 -150 700
Thermal Resistance:
25" 25 (max.J 25
Junction-ta-Case ROJC 2N4037 &
40394
165lmax.l ·C/W
165 2N4037 165
Junction-to-Ambient 40394
R9JA
50 (max.l
40391
·CAUTION: The sustaining voltages VCEO(sus), VCER(sus), and VCEV(susl MUST NOTbe measured on a curve tracer_
b Pulsed, pulse duration = 300 Ils, duty factor <; 2%.
-In accordance with JEDEC registration data format IJS-& RDF-' 2N4036; .15·9 RDf·2 2N4037. 2N43141.
'Ial = 182· 15 mA
117
POWER TRANSISTORS
2N4036, 2N4037, 2N4314, 40391, 40394
:
1-
COLLEClOR-TO-EIIIIITTER VOLTAGE IVcrl __ IO Y
FREQUENCY. ZO UHI:
AMBIENT 'TEMPERATURE ITA'oU·C
&
I-- CASE TEMPERATURE (TC)
",""'" .,,, " ...," , "

I
WITH INCREASE IN TEMPERATURE)
. .... """..J J.
= 2SoC
POWER
MULTIPLIER
''''~
I-
~!
Ii
Ii
4
V
" I\. I II
IC MAX. (CONTINUOUS)
PULSED OPERATION
150 1&.
* I
~i I 9.~-
i~
'/
/ 1\
• "- "\. i" "l /~ 1.-
I' "~~I~ ~
- . .. .. . ... 6
-I -10 -100
'"I ~ ~~# 5'1
COI.LtCTOR CLItRENT ClC'-."
U 4
O~i~!'
~ 3.~
Fig.4-Typical small'signal beta charac- ....
teristics for all types. z
I&J
I
0: 2.0
0: 2
:::>
u
I
'"
0:
0
....
u -0.1 I.~-
I&J
..J 8
VCEO MAX.= 40V
~
I
..J (2N4037)
0
u 6
!V~ I I.
4
eEO MAX.= 65V !
(2N4036 III 2N4314)
I
8- 1 ~fj i~~~ ::;; :::: =::= :::::: ........... . I
IIE FOR I I
................................ ::::::::::::::::::::
-1.0 -2.0 -5.0 -4.0 -5,0 -8.0
Cot.LECTOR-TO-EMITTER SATURATION YO&.TAG!, Ya:(utJ-V
2
SINGLE
NONREPETITIVE
PULSE
!
921.8-1_"1
I
Fig. 5- Typical saturation·voltage charac-
teristics for 2N4036. -0.01
-I
2 4 6
II I
8 -10
I
I
4 6 8_ 100
Fig. 6-Maximum operating areas for 2N4036, 2N4037, and 2N4314.
o
-Ii"
.,.. ;:.::]]
-t6 -18
'0'
8A$E-TO-EMITTER VOLTAGE 1V8E)-V HL$-12'SU COLL.ECTOR-TO-EMITTER VOlTAGE (Va'-V UL,_IHlRI COlLECTOR-TO-EtIITTER VOLTAGE (VCE'I-V
Fig. 7- Typical transfer characteristics Fig.8- Typical large-signal output Fig.9 - Typical small·signal output
for 2N4037 and 2N4314. characteristics for 2N4037, characteristics for 2N4037,
2N4314, 40391, and 40394. 2N4314, 4039', snd 40394.
IC- IOI B,-IOI8Z
"N8IENT TEMPERATURE IT"lo2SoC
I-
I.OO~
:...... STok4GE
~('J i
. · ~ ~
. .· ~
w
I """"i--
!
~
0
%
~
10
" Itlse TIME U 1
~TI"Erfl
~
· .. .
Di( .....
_(''''Ef~1
-/0 -100 -1.000
COLLECTOR CURRENT (ZC'-IIIA
UL'-1211'RI
Fig. 10-Typical saturated switching times

for2N4036.
118 ____________________________________________ ~---------------- __

------------------------__________________________________ POWERTRANSISTORS
2N4231 A, 2N4232A,2N4233A, 2N6312,2N6313,2N6314

Silicon N-P-N and P-N-P Medium-Power Transistors
General-Purpose Types for Switching Applications
Features:
RCA-2N4231 A, 2N4232A, and 2N4233A complements to 2N4231 A, 2N4232A, and
are multiple-epitaxial n-p-n transistors. The 2N4233A. These types are supplied in steel • 2N4231A-2N4233A complements of
RCA-2N6312, 2N6313, and 2N6314 are JEDEC TO-213MA hermetic packages. 2N6312-2N6314
multiple·epitaxial p·n-p transistors. They are • Low saturation voltages
• Maximum·safe-area-of-operation curves
• Thermal·cycle ratings
MAXIMUM RATINGS, Absolute-Maximum Values: • High gain at high current
N·P·N 2N4231A 2N4232A 2N4233A
P·N·P 2N6312+ 2N6313+ 2N6314+
• VC80' 40 60 80 V
VCEo(susl 40 60 80 V
• V EBG · 5 5 5 V
• IC (2N4231 A, 2N4232A, 2N4233A) . 3 A
(2N6312, 2N6313. 2N6314) 5 A
• ICM (Registered for 2N6312, 13, 14 only) 10 A
• 16 (2N4231A, 2N4233A, 2N4233A) . 1 A
(2N6312, 2N6313, 2N6314) 2 A
• PT TC ';25 0 C . 75 W
TC > 25 0 C derate linearly 0.43 w/c JEDEC TO-213MA
• T J , T stg (2N4231A, 2N4232A, 2N4233A) -5510200 °c (See dimensional outline "N",)
(2N6312, 2N6313, 2N6314) -6510200 °c
• T L (2N6312, 2N6313, 2N6314 onlyl
At distances ~ 1/32 in. (0.8 mm) from
seating plane for 105 max. 235 °c
* 1n accordance with JEDEC registration data.
:a: 100
.·
.1.
~
,
~ t"-- e.,
C'-~pC.""u..
g
ffi ~
•
f
,,~~ ... ~ ....~. c cl. '0-.:
10
10'
~10"
. . .. ('
NUMIE" Of TH"'MAL
I. . . . . .
'0'
0
aa.u
.. , . .
Fig. 2 ~ Thermal-cycling rating chart for all types.
z>-
W
0:
0:
:>
u
COLLECTOR-lO-EMITTER VOLTAGE (VCEP4V
0:
o
>-
; , .Ll
Q
u
J-...
W
..J
..J
i '-.....
L
···
15100
o
U ~ ~
~ ["1,'"1-Ae:~
~
~~
K-C
~
)0(;.
~..
"
!g , [""'--.;"'0 ....
2 2
COLLECTOR-TO-EMITTER VOLTAGEIVCE)- V
g ,0
, .. 0,1
z
COLLECTOR CURRENT t
. .. I
r c I-A
,
92CM-30318 Fig. 3 - Typical de beta characteristics for
2N4231A, 2N4232A, and 2N4233A.
Fig. 1 - Maximum operating areas for alJ types .•
--------------------------------_____________________________________ 119
POWERTRANSISTORS ________----------------------------------------------
2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314
ELECTRICAL CHARACTERISTICS, At Case Temperatura (TcJ = 25"C

unless otherwise 1loecified
TEST CONDITIONS. LIMITS U'
VOLTAGE CURRENT 2N42;11A 2N4232A 2N4233A N
CHARACTERISTIC I
Vdc Adc ~6312+ 2N6313. 2N6314.
T
VCE V8E IC 18 Min. Max. Min. Max. Min. Max. S
• ICBO 40B
SOB
-
-
50
--
-
-
-
50,
-
--
-
-50
soa - - - p.A
• ICEX
RBE = lOOn
40
so
-1.5
-1.5
-
-
100
-
- -
- 100
-
-
.-
-
BO -1.5 - - - - - 100 •••
-01
.t .1'
~I
241
• RBE= loon, 40 -1.5 - 1 - - - - COLLECTOR CURRENTIIc1-A .2C'·1OSIO
TC=l50°C SO -1.5 - - - 1 - - Fig. 4.,. Typical dc beta characreristics for

80 ":'1.5 - - - - - 1 rnA
2N6372.2N6373.and.2N6374.
30 0 - 1 - - - -
• ICEO 50
70
0
0
-
-
-
-
-
-
1 -- -1 I
COLLlC'I'OR'1U-IIIITTDI VOLTAlECYczI-4Y
~ CAl! lUIlltEMTUM CTc I- eec
~
T
• -5 - 0.5 - 0.5 - 0.5 £ ..
•
lEBO
hFE 2 30 10 10 lu
. ii
.
2N4231A, 2N4232A. 2 1.5c 25 100 25 100 25 100
2N4233A 2 O.se 40 .- 40 - 40 - "
Il .V 1/
4 5C 4 - 4 - 4 -
I•
2N6312,2NS313, 4 3c 10 - 10 - 10 -
2N6314 4 1.se 25 100 25 100 25 100 ~ •
-
• VBE
2N4231A.2N4232A,
4 0.5C 40 - 40 40 - 2
0.01
, . .. . . .. . . ..
0.1 I
COLLECYOR CURRE.NT Ilel-A
10
2N4233A 2 1.se - 1.4 - 1.4 - 1.4

Fig. 5 - Typical gain·bandwidth product for
2N6312,2N6313,
2N6314 4 1.5C - 1.4 - 1.4 - 1.4 a/l typ....
• VCE(sat)
2N4231A,2N4232A, 3c 0.3 - 2 - 2 - 2
V
2N4233A 1.5c 0.15 - 0.7 - 0.7 - 0.7
2N6312,2N6313, 5c 1.25 - 4 - 4 - 4
2N6314 3c 0.3 - 2 - 2 - 2
1.5c 0.15 - 0.7 - 0.7 - 0.7
• VCEO(susl b O.lc 0 40 - 60 - 80 -
• Ihfel f=l MHz 10 0.5 4 - 4 - 4 -
• hfe .. f=l kHz '10 0.5 20 - 20 - 20 -
fT 10 0.5 4 - 4 - 4 - MHz
• Cobo f=O.l MHz

2N4231A.2N4233A,
2N4233A lOB - 200 - 200 - 200 pF REVERSE VOLTAGE IVR)-V
Fig. 6 _. Typical common·base input or output
92CS~30581
2NS312,2N6313,
2NS314 lOB - 300 - 300 - 300 capacitance characteristic, 8S a function
of reverse voltage for all types.•
ROJC - 2.3 - 2.3 - 2.3 °CfW
*. In accordance with JEDEC registration data format.
• For p--n-p devices, voltage and current values, are negative.
• VCB valua.
b CAUTION: Sustaining voltages VCEOlsusl MUST NOT be mealured on a curve tracer.
C Pulsed, pulse duration = 300 liS, duty factor = I.B%.
0' 2 ,
COLLECTOR CURRENT t IC I_A
Fig. 7 - Typical saturated switching characteristics

fgr 2N4237 A, 2N4232A. and2N4233A .
• For p-n-p devices, voltage and current values. are negative.
120 ___________________________________________________________________
_____________________________________________________________ POWERTRANSISTORS
2N4231A,2N4232A,2N4233A,2N6312,2N6313,2N6314
"
COLLECTOR SUPPLVVOlTAGE lVCCI •• 30V
CASE TEhiPERATURE ITC)OZS"C
~BI'18Z'IC/IO
.
CASE TEMPERATUREIT,)·ZS"C
.....
,0
~2~
o.
06
~ 1
20
0.5 I 1.$ Z 4 6 12
-I
BASE-TO- EMITTER VOLTAGE IVBE1-V COLLECTOR -TO-EMITTER VOLTAGE (VeEI - v
COLLECTOR CURRENT (IC!-A SUI-5!o2J1t1
ULS·55'IAI
Fig. 8 - Typical saturated switching characteristics Fig. 9 - Typical input characteristics for Fig. 10 - Typical output characteristics for
for 2N6312. 2N6313. and 2N6314. all types .• all types.•
B.lS[-TO-[MITTER VOLTAGE (VSE) - "

92lS- ~~291'1'

a/l types .•
_____________________________________________________________________ 121
POWER TRANSISTORS
2N4898,2N4899,2N4900
Silicon P-N-P Features:
Medium-Power Transistors • Low saturation voltages

• Maximum-safe-area-of-operation curves
General-Purpose Types for Switching Applications
• Hermetically-sealed JEDEC TO-2l3MA
package
The RCA-2N4898, -2N4899, and -2N4900 All these transistors are intended for a wide
are multiple-epitaxial p-n-p transistors_ All variety of medium-power switching and
are supplied in the JEDEC Tel-2l3MA amplifier applications, such as series and TERMINAL DESIGNATIONS
package_ output stages of high-fidelity amplifiers_
MAXIMUM RATINGS,Absolute-Maximum Values:

2N4898 2N4899 2N4900 JEDEC TO-213MA
• vCBO - 40 60 80 V (See dimensional outline UN".)
• VCEX(sus)
v BE = -1.5 V, RBE = 100!1 40 60 80 V
VCEO(sus) 40 60 80 V
• VEBO ' 5 5 5 V
• IC' 1 1 1 A
ICM 4 4 4 A
•III PIS' 1 A
T 0
At T C up to 25 0C 25 25 25 W
At T C above 25 C _ _ _ See Figs. 1,3 _ _
* T J • Tstg . _ _ _ -65 to +200 _ _ °c
* TL
At distances ~ 1/32 in. (0.8 mm) from seating plane
_ _ _ +235 _ _ _ _
for 10 s max. °c
III In accordance with JEDEC registration data.
o 2550751OO12!11~I7!1200
E'FECTIYE CASE: TEMP. OR CASE TEMP. ITEF'F OR TCI--C
.2CS-'"''
Fig. 2 - Current derating chart for all types.
'0.
IW
.w'""
2.5mH
J.W MILLER Na.4533.
OR EQUIVALENT
T--~--l
-[Bv 10,I%,I/2W
[NON-INDUCTIVEI
60Hz I I
, I
L_____ J
CHOPPER TYPE
MERCURY RELAY
van)
GIIID
OSCILLOSCOPE
INPUT
I£WLETT-PACICARD
MODEL No 1301,
paB JMLBI'OB. OR EOUIVALENT
CLARE 1028,0fI
EQUiVAlENT
HOAIZ
COLLECTOR-YO-EMITTER VOLTAGE(VcE'-V
IleM-alltO Fig. 3 - Circuit used to measure sUltBining voltage,
Fig. t -'Maximum operatingaress for all types. ITC"" 25°C). VCEO(rur,-
122 __________~----------------------------~----------------------
2N4898,2N4899,2N4900
ELECTRICAL CHARACTERISTICS. At Case Temperature (TC) ~ 25"Cunless otherwise specified

U
VOLTAGE CURRENT N
CHARACTERISTICS 2N4898 2N4899 2N4900
Vdc Adc I
T
VCE V8E IC 18 Min. Max Min. Max. Min. Max. S
40 a - 100 - - -
* 'CBO ooa - - - 100 - - Il A
80 a - - - - - 100
40 -1.5 - 100 - - - -
'CEX
RBE = 100 n
60 -1.5 - - - 100 - - Il A
80 -1.5 - - - - - 100
40 -1.5 - 1 - - - -
* RBE =100n
60 -1.5 - - - 1 - - rnA
TC = 150°C
80 -1.5 - - - - - 1
20 - 0.5 - - - -
* ICEO 30 - - - 0.5 - - rnA
40 - - - - - 0.5
* 'EBO -5 - 1 - 1 - 1 rnA
1 0.5 b 20 100 20 100 20 100

* hFE 1 0.05 b 40 - 40 - 40 -
1 lb 10 - 10 - 10 -
* VCEO(sus)C O.lb 40 - 60 - 80 - V
.
V8E(sat) lb 0.1 - 1.3 - 1.3 - 1.3 V
* VBE 1 lb - 1.3 - 1.3 - 1.3 V
* VCE(sat) lb 0.1 - 0.6 - 0.6 - 0.6 V
• hie
10 0.25 25 - 25 - 25 -
1= 1 kHz
• IT 10 fl·25 3 - 3 - 3 - MHz
1=1 MHz
Cobo loa - 100 - roo - 100 pF
RO~C - 7 - 7 - 7 °CfW
• In accordance with JEDEC registration data. 8 Vee value.

b Pulsed, pulse duration'" 3001.u5. duty factor"" 1.8%.
C CAUTION: Sustaining voltage, V CEO (sus) • MUST NOT be measured on a curve tracer ~ (See Figs. 2 and 4.)
.. PULSE CURRENT IIp I RANGE MUST BE O.2-0.4A
§ ~CEOI""
~ * The sustaining voltage, V CEO(susl. is acceptable
~1 A e c when the trace falls to the right of point "A" for
§~ 100 type 2N4898; point "B" for type 2N4899; and
-'_
~
0 40
., 80
8 COLLECTOR-TO-EMITTER VOLTAGE
point "e" for type 2N4900.
(VeE I-v
Fig. 4 - Oscilloscope display for measurement of sustaining voltages.
________________________________________________________________ 123
POWER TRANSISTORS
2N4904,2N4905,2N4906
SIlicon P-N-P Epitaxial-Base High-Power Transistors

For Industrial and Commercial Use • High diSSipation capability
The RCA-2N4904, 2N4905 and 2N4906 are and feature a dissipation capability of 87_5
epitaxial-base silicon p-n-p transistors fea- • Hermetically sealed JEDEC TO-3/TO-204MA
watts at case temperatures up to 250 C_ package
turing high-gain at high current_ They may
They differ in voltage ratings a~d in the • High gain at high current
be used as complements to the 2N4913, currents at which the parameters are con-
2N4914 and 2N4915 n-p-n types, respec- • Thermal-cycling raling curve
trolled. All are supplied in the steel JEDEC
tively _These devices are intended for medium-
TO-204MA hermetic package.
speed switching and amplifier applications
Applications:
MAXIMUM RATINGS,Absolute-Maximum Values: • High-fidelity amplifiers
2N4904 2N4905 2N4906 • Power-switching circuits
• vCEO ............................ . -40 -60 -80 v • Solenoid drivers
• vCBO ............................ . -40 -80 -80 V TERMINAL DESIGNATIONS
• VEBO ............................ . -5 -5 -5 V
·Ie ................................ . -5 -5 -5 A
·IB ._ ... '........................... . -1 -1 -1 .A
• PT
At TC E:; 25°C .•.•.••.•....••••. 87.5 87.5 87.5 w
At T C > 25°C .••..• derate linearlv 0.5
_ _ _ -65 to 200 _ _ _ __
WJOC
• T J • Tots ..•••••••••.••..•.•..••.•••• °c
• T Let 1116 ± 1/32 in. (1.58 ± O.8mm) _ _ _ _ _ 235 _ _ _ _ _ _ °e
from ca.e for 10. • .••••.•.•..• _ •. JEDEC TO-204MA
(See dlmenalonal outline "A".)
• In accordsnca with JEDEe registration data.
, ..
· -;,}
. ·,
~-
c ~ '.- 100
I".. \\ ~\ .
0
.!.
u \
•
1
~' .
Ie · I l' ;
~ .- - ~
o.
"',,"
"..
··, ~
:< r- r- ~
::
~ LIMIT FOR
a
II \ ~""
~
2"~904 _
2N4905 - I-
f-f-'
·i 'r- 1--'"
11 o~
'\i"', r-
.•. . .•
2N4906 -
I OJ t--
, -\~ I~~ ~ , ~" ,
AMBIENT TEMPERATURE CTc)-ZS·C
,
..
0,1
10
COLLECTOR OIiTTIR VOLTAGE eYCEI-V
100
92CS- 30178
10
I
, . ~;,
• 8
10
t
0.
4
102
NUMIER 01' THEMlM.CYtU:S liN THOUSMOS)
•• 0
10'
Fig. 1 - Maximum operating Breas for BII types. .2CS-ISS101t1
Fig. 2 - Thermsl-cycling rBting chBrt.
COLLECTQFI- TO-EMITTER VOLrAGE (Ve E 1. -4V
·
1u_
t!
~
~ -(I
ii
-,
-0.01 -0.\
. ..
COLLECTOR CURRENT I.Iel-A
-I
... -10 -0.01 -0.1 -I
COLlECTOR CURRENT (Ic)-A
I: 4 ••
-10
-0.5
BASE-TO-EMITTER WLTAGE IVeEl-V
-.
Fig. 5 - Typical tran.fer characteristics
Fig. 3 - Typical tJBin-bBndwidth product Fig_ 4 - Typical dc batB chBrsctoristics
for all type•.
forBII type•. for all typa••
1~ __________________________________ ~~ ______________________
2N4904,2N4905,2N4906
ELECTRICAL CHARACTERISTICS, At Case Temperature TC = 25°C
Unless Otherwise Specified
CHARAC· Voltage Current
2N4904 2N4905 2N4906 UNITS
TERISTIC V dc Adc
VCE VBE IC IB Min. Max. Min. Max. Min. Max.
ICEX 1.5-40 - - - -0.1 - - - -

.1.5-60 - - - - - -0.1 - -
1.5-80 - - - - - - - -0.1
mA
TC-150 o C 1.5-40 - - - -2 - - - -
-60 1.5 - - - - - -2 - -
-80 1.5 - - - - - - - -2
ICED -40 - - 0 - -1 - - - -
-60 - - 0 - - - -1 - - mA
-80 - - 0 - - - - - -1
ICBO 40 c - - - - -0.1 - - - -
IE = 0
60 c - - - - - - -0.1 - - mA
80 C - - - - - - - - -0.1
lEBO - 5 0 - - -1 - -1 - -1 mA
VCEO(sus!b - - -0.2 0 -40 - -60 - -80 - V
-2 - -2.5 - 25 100 25 100 25 100
hFE a -2 - -5 - 7 - 7 - 7 -
VBE a -2 - -2.5 - - -1.4 - -1.4 - -1.4 V
-;'>.5 -U.;'>b ·1 ·1 ·1
VCE(sat!a V
- - -5 -1 - -1.5 - -1.5 - -1.5
fT f=l MHz -10 - -1 - 4 - 4 - 4 - MHz
hfe f=l kHz -10 - -0.5 - 40 - 40 - 40 -
ROJC - - - - - 2 - 2 - 2 vC/W
* In accordance with JEOEC registration data.
a Pulsed; pulse duration = 300 }.LS, duty factor = 2%.
b CAUTION: Sustaining voltage, V CEO(sus), MUST NOTbe measured on a curve tracer.
ev eB ·
CASE TEMPERATURE (TC)·2~·C
17_5
700
600
'00
400
~ 300
~ 7.5 200
"
8
, BASE CURRENT (18)0100 mA
30
2.'
10
10 ro ~ ~ ~ ~ ro 00 00 ~
COLLECTOR-lO-EMITTER VOLTAGE {VCEI- V
BASE+TO-EMITTER VOLTAGEIVElE)-V 92CS-19~e2
Fig. 6 - Typical input characteristics Fig. 7 - Typical output characteristics

for all types. for all types.
________________________________________________________________________ 125
POWER TRANSISTORS
2N4913, 2N4914, 2N4915
Silicon N·P·N Epitaxlal·Base High.Power Transistors

Features:
The RCA·2N4913, 2N4914, and 2N4915 capability of 87.5 watts at case temperature • Maximum safe-areas:Of-operation curves
are epitaxial·base silicon n·p·n transistors up to 25°C. • Hermetically sealed JEDEC TO·3/TO-204MA
package
featuring high'gain at high current. They They differ in voltage ratings and in the
may be used as complements to the 2N4904, • High gain at high current
currents at which the parameters are con· • Thermal-cycling rating curve
2N4905, and 2N4906 p·n·p types respec· trolled. All are supplied in the steel JEDEC
tively. These devices are intended for medi·
TO·204MA hermetic package. Applications:
um'speed sWitching and feature a dissipation
MAXIMUM RATINGS, Absolute·Maximum Values: 2N4913 2N4914 2N4915 • Power-switching circuits
40 60 80 v • Solenoid drivers
• VeEO '
• VCBO '
40 60 80 v
S 5 5 V
• V EBO '
5 S 5 A
• Ie·
1 1 A
• lB'
• PT
At TcE;;2Soc 87.5 87.5 87.5 W
At Te>2SoC derate linearlv ----0.5--- WIDe
• TL
At 1/16 in. ± 1/32 in. (1.58 mm 0.8 mm)
from case for 10 s • - - - - 235 - - - - ·e TERMINAL DESIGNATIONS
• TJ , T otg • - - -65 to 200 - - - °c
• In accordance with JEDEC registration data. c C
10,
"b-l- '~
..
,
~_'\<o ~'
~ ,
I
~~
~
~I
".'\
u , JEDEC TO-204MA
,
~.
liMIT FOR (See dimensional oulllne "AU.)
2,.,'4913
2N'4914-
8 , 2",49fS - =~
0.1
. .,
AMBIENT TEMPERATURE ITe
,
10
).Z$.d
,
COLLECTOR EMITTER VOLTAGE (VCE}-Y
. ., ,00
'iCS-lOln
Fig. 1 - Maximum operating areas for 8" types.
e COLLECTOR-TO~E"ITTE" VOLTA,E (VCE) ... v
,100
1-
COL.L.ECTOR-TO-EIIITTEJII VOLTAGEIVcrl •
•• i
7 CASE TEMPERATUftE CTc)· U·C
•1 , '\. i..., J. ,J.~TL!. 'Tc'!,"OC :

'i
L-- ,..--1--
~t-- ./'" f\
!
~ .- ,.-~
1\ ~~<",
'". "'~
~
i
~ 100
~ 80
I·. 1/ \
~
-40'"C
- -~,; 00,..-
" ,--.'
:I 1\ \ \ I ,. ~ ~.....
~<"
~~
40
~
I
~
E
~
I I.• """
~ rot
I-
. ...;\~ .\~..,~ . .i't

\. !
. . .' . .. . ..I. . . .. , ... , ...
'«0, I
°o ':I0 8
10
I 10
., , 10 2
0
10' 0.01 0.1 I 0." dl I ~

NUMBER OF THERMAL CTtLES liN THOUSANDS) COLLECTOR CURft£NT 'Ic)-A COLLECTOR CURRENT tIcl-1t.
ucs-zeQO"
Fig. 2 - Thermal-cycling rating chart. Fig. 3 - Typical de bata characteristics for a/l types. Fig. 4 - Typical gJin bandwidth product for all types.
126 ______________________________________________ ~ ______ ~ ___________

2N4913,2N4914,2N4915
ELECTRICAL CHARACTERISTICS, at Case Temperature TC = 25°C Unless Otherwise Specified

VOLTAGE CURRENT
CHARACTERISTI( V dc Adc 2N4913 2N4914 2N4915 UNITS
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX.
. ICEX 40 -1.5 - - - 0.1 - - '- -
60 -1.5 - - - - - 0.1 - -
80 -1.5 - - - - - - - 0.1 mA
TC=150°C 40 -1.5 - - - 2 - - - -
60 -1.5 - - - - - 2 - -
80 -1.5 - - - - - - - 2
. ICEO 40 - - 0 - 1 - - - -
60 - - 0 - - - 1 - - rnA
80 - - 0 - - - - - 1
..
ICBO 40c - - - - 1 - - - -
60c - - - - - - 1 - - rnA
80 c - - - - - - - - 1
. lEBO - 5 - - - 1 - 1 - 1 rnA
. VCEO(sus)b - - 0.2 0 40 - 60 - 80 - V
. hFEa 2 - 2.5 - 25 100 25 100 25 100
2 - 5 - 7 - 7 - 7 -
* VBEa 2 - 2.5 - - 1.4 - 1.4 - 1.4 V
* VCE(sat)a - - 2.5 0.25 - 0.75 - 0.75 - 0.75 V

- - 5 1 - 1.5 - 1.5 - 1.5
. fT f = 1 MHz 10 - 1 - 4 - 4 - 4 - MHz
. hfe f = 1 kHz 10 - 0.5 - 20 - 20 - 20 -
ROJC - - - - - 2 - 2 - 2 °C/W
*'n accordance with JEDEC registration data.

8 Pulsed; pulse duration"" 300 "'S. Duty factol'" = 2%.
beAUTION: Sustaining voltage, BVCEO(sus), MUST NOT BE measured on a curve tracer.
C V eB
I 00
BASE-TO-EMITTER VOL.TAGE IVBE)- V COLLECTOR-TO-EMITTER VOLTAGE tvCEI- V BASE-lO-EMITTER VOLTAGf iVSEI- V
92CS·Z9005 92CS-29007
1t2cs·nOO6
Fig. 5 - Typical input characteristics for all types. Fig. 6 - Typical output characteristics for all types. Fig. 7 - Typical transfer characteristics for all types.
__----------------------------------------------~-------------------127
2N5038,2N5039,2N6354,2N6496
High-Current, High-Power, High-Speed Silicon N-P-N

Power Transistors Features:
Devices for Switching anp Amplifier Circuits in Industrial and Commercial Applications • Maximum operating area curves for dc
'and pulse operation
switching speeds make these devices es- • IS/b-limit line beginning at 28 V
RCA-2N5038. 2N5039, 2N6354, and
pecially suhed for switching-control am- • High collector current ratings
2N6496 are epitaxial silicon n-p-n power
plifiers, power gates, switching regulators, • High-dissipation capability
transistors_ They differ in breakdown-
converters, and inverters. Other recom- • Fast switching speeds -
voltage ratings, leakage-current, and dc-
Measured at: SA, 8 A, 10 A, 12 A
beta values mended applications include dc-rf ampli-
levels
fiers and power oscillators_ These transis-
The high current-handling capability of tors are supplied in the JEDEC TO-3
these transistors in conjunction with fast package_ TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Absolute Maximum Values: 2N5038 2N5039 2N6354 2N6496

"CoLLECToR-To-BASE VOLTAGE ___ ...•.......•• VCBo 150 120 150 150 v
CoLLECToR-To-EMITTER SUSTAINING VOLTAGE,
With -1.5 volts IV BE' of reverse bias and
external base·ta-emitter resistance (RBEI=100n ..•.... VCEX(sus) 150 120 V
With external base-ta·emitter resistance
(RBE) = 500n. L = 7mH .. ' ..... - VCEX 130 V
With RBE 0;;;:; son ............ . . .. VeER(sus) 110 95 130 V
With base open . . . . . . . . . . . . . . . . . . . . ..•. VCEO(sus) 90 75 120 110 V JEDEC TO·3
"EMITTER·TO·BASE VOLTAGE .......... . VEBo 7 6.5 V
"CONTINUOUS COLLECTOR CURRENT .. IC 20 20 10 15 A (See dImensIonal oulllne "A n.J
"PEAK COLLECTOR CURRENT ICM 30 30 12 A
"CONTINUOUS BASE CURRENT .......... . IB 5 5 5 A
"TRANSISTOR DISSIPATION, .......•. PT
At case temperatures up to 25°C and VeE up to 28 V... . 140 140 140 140 W
At case temperature of 100ne and Vee of 20 V .. . 80 80 80 80 W
At case temperatures above 25°C - - Derate linearly to 20aoC
"TEMPERATURE RANGE,
Storage & Operating (Junction) ... - - - -65 to 200 - - - ·C
PIN TEMPERATURE (During soldering)
At distances;" 1/32 in. (0.8 mm)
from seating plane for 10 s max. 230
·'n accordance with JEDEC registration data format (JS-6, RDF·lI

."', CASE TEMPERATURE (TC) =25'C
6
(FOR TC ABOVE 25', DERATE LINEARLY)
I II
, I 1 0.05 m~7
I C MAX. (PULSED)
, I PULSE OPERATION'
1
IC MAX. (CONTINUOUS) ~
l'. N~ O.lms
10· tO~
~ ,,~~~~. )z
HUMBER OF THEflMAL CYCLES
10 "., O"<"1l I' i', Fig. 2 - Thermal-cycling raring chart for all
, ~'?o~~"'.?; "', types.
1 <"""/~;o.,,\,
i.
t:! 6
<"",\,\
'"u
0
~ 1
'\ ,
... ......
.~\\
w
~ ... I
1
,
. ~~:\l'
t-I~l\
61---- t---------
'1----
·FOR SINGLE
NONREPETITIVE PULSE I !
VCEO MAX. =75 V -
I (2N503~
VCEO MAX. = 90 V _
l...-..vCEO(2MN~l<,j=~~~V
0.1
1 1 , 6 g.
10
(2NIOl8)
,
1 .
6 6 1 . 6 , 1000 COLLECTOR-TO-EMITTER VOI.TAGE (VCE1-V '::S-22612
Fig. 3 - Maximum operating areas for
Fig. 1 - Maximum operating areas for 2N5038, 2N5039. 2N6496_ 2N5038. 2N5039. 2N6496.
128 _____________________________________________________________________
2N5038,2N5039,2N6354,2N6496
ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) = 25"C Urle.. Otherwise Specified
~
•,
~
..
CASE TEMPERATuRE ITt;) • 2!1" C
TEST CONDITIONS
VC .. TAGE CURRENT
LIMITS w>
~!.
~~12
llTI K.J11 I
SYMBOL UNITS 1
'rrt t---....
_....
V de A de 2N5038 2N5039 2N6354 2N6496 VCER , ... II VC[Ohu,1
VCE VBE ;C IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
~~H
e~ ~ "';' I -,
· ICBO
VCB=150V
- - - - - 5 - - mA
~11O
~;90 !~ r-:.J I ' I
l!a:ot'usI
55 0 - - - 20 - - - -
8:i
Be
j~ e
1
~ i
T
ICED 70 0 - 20 - - - - - - mA i , 1
.II. I i'r-~
.. . ..
100 - - - - - 20 - - 10 IK
EXTERNAL eASE-lO-EMITTER RESISTANCE IRBEI-A
110 -1.5 - - - 50 - - - -
· 130 0
140 -1.5
-
-
-
50
-
-
-
-
-
-
-
-
-
-
20
-
Fig. 4 - Collector·to·emitter sustaining volt·
tage characteristics for 2N5038,
140 0 - - - - - 10 - - 2N5039 and 2N6496.
ICEV rnA
85 -1.5 - - - 10 - - - -
· TC=150oC 100 -1.5
130 0
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
25
· TC=125°C 140 0
-5 0
-
-
-
5
-
-
-
15
-
-
20
-
-
-
-
-
· lEBO -6.5
-7
0
0
-
-
-
50
-
-
-
50
-
- -
5 -
-
-
50
mA
· 2 5' - - - - 20 150 - -
·· hFE 2
2
8'
10"
-
-
-
-
-
- -
- -
10
-
100
12
-
100
-
5 2' 50 250 30 250 - - - -
·· 5
5
10'
12"
-
20
-
100
20
-
100
-
-
-
-
-
-
-
-
-
·
0$ 1.0 1.5 2.0 25 3.0
BASE -TO-ENITT£R VOLTAGE 1VaEI-V
\hl'\ Fig. 5 - Typical input characteristics for

f = 5 MHz 10 2 12 - 12 - - - 12 - 2N5038 and 2N5039.
f=10MHz 10 1 - - - - 8 - - -
VCEo!sUS) 0.2" 0 90 b - 75 b - 120b - 100b -
VCEX(sus) -1.5 0.2 0 IS0 b - 120b - - - - - V
(RSE) = lOOn
0.2 0 110 - 95 - - - 130 -
VeER 0.2 - - - - 130b - - -
R8E .;; son
.;; lOon
VEBO
V
IE= 0.05 A 0 7 - 7 - - - 7 -
· = 0.005 A
2
0
8"
-
-
-
-
-
-
-
-
6.5
-
-
-
-
-
-
1.6
0.'
I ~'2 ;)
VSE 5 lQ." - - - 1.8 - - - - V BASE-to-EMITTER VOLTAGE IVaEI- v
5 12" - 1.8 - - - - - -
·· VCE(sat)
8"
5"
0.8
0.5
-
-
-
-
-
-
-
-
-
-
-
0.5
-
-
1.0
-
Fig. 6 - Typical input characteristic for
2N6496.
10" 1.0 - - - 1.0 - 1 - .... V

12' 1.2 - 1.0 - - - - - -
20" 5 - 2.5 - 2.5 - - - -
· VSE(sat)
5"
8"
0.5
O.B
-
-
-
-
-
-
-
-
-
-
1-.3
-
-
-
-
2.0 V
10" 1 - - - - - 2 - -
· Cob
20" 5 -
-
3.3
400
-
-
3.3
400
-
-
-
400
-
-
-
400 pF
VCS= 10V,
f= 1 MHz
*1" accordanc. with JEDEC registration data format (JS·6, RDF·l). COLLECTOR-lO-EMITTER VOLTAGE IVCEI-v
",
, Pulsed; pulse duration';; 350l's, duty factor = 2%.
b CAUTION: The sustaining voltages VCEO(SllS), VCER(sus), and VCEX(sus) MUST NOT be measured on a Fig. 7 - Typical output characteristics for
curve tracer. 2N5038.
_____________________________________________________________________ 129
POWER TRANSISTORS
2N5038, 2N5039, 2N6354, 2N6496

ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 2!i"C Unless Otherwise Specified (Cont.) CASE TEMPERATURE fTC' • 25- C

VC"TAGE CURRENT UNITS
SYMBOL
V de A de 2N503B 2N5039 2N6354 2N6496
VCE VBE ;C IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
SIb 25 5.5
t= 's, 28 5.0 - 5.0 - - - 5.0 - A 2~~' - ...
180--:': -~-
nonrepetitive 45 0.9 - 0.9 - - - 0.9 - 120"
::::
• • • • • • _. f
...... E RRE II: 1·"OmA

ES/b
RaE = 5Hl. -1 5 - - - - 0.3 - - - 10 25 30 35
L = 25pH COLLECTOR-tO-EMITTER VOLTAGE (Vce:1-V
mJ
Ra- 20n, -4 12 13 - 13 - .- - - - Fig. 8 - Typical output characteristics
L = 180pH -4 8 - - - - - - 5.7 - for2N5039.
· tr
(VCC = 30 V,
5
8
0.5
0.8
-
-
-
-
-
-
-
-
-
-
0.3
-
-
-
-
0.5
161 = 162): 10 1.0 - - - 0.5 - 1 - -
Rise Time 12 1.2 - 0.5 - - - - - -
5 0.5 - - - - - 1 - -
· tSl
8
10
0.8
1.0
-
-
-
-
-
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
1.5
!i 10
12 1.2 1.5 - ps
I
tS2
(No Load)
0.5
5
0.5
0.5
-
-
-
-
-
-
-
-
-
-
2
0.2
- - e ..
, '"'
"''"'
· tf 6
10
0.8
1.0
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
0.5
- 10 15 20
lASE CURRENT 1181-20 1IIA
£5 30 35
COLLECTOR-TO-EMITTER VOlTAGE IVCEI-V
40
12 1.2 - 0.5 - - - - - -
10 1'0 - 1.25 - 1.25 - - - 1.25
·C/W
Fig. 9 - Typical output characteristics
R8JC 20 1 - - - - - 1.25 - - for2N6496.
• I" accordance with JEDEC registration data format (JS·6. RUF·').
COLLECtOR-tO-EMITTER YoLtolGE (VCE,oSV ~ ••..••
0,5 1.0 15 Z.O 25 30

BASE-tO-EMITTER VOLtolGE{VSE'- v
Z.
8&SE-TO-EMITTER VOLTAGE 1"8£I-V
COLLECTOIil-TO-EMITTER VOLTASE fYCEI-V
Fig. 11 - Typical transfer characteristics for Fig. 12 - Typical transfer characteristics for
Fig. 10 _ Typical output characteristics for
2N5038. 2N5039.
• 2N6354.
.~ , COLLECTOR-tO-EMITTER VOLTAGE {VcEI. 2 v

"FE NORMALIZEO ABOUT hFE AT 5A AND 25°C
r- 96~
B8 !.
COLLECTOno.EMrTTERVOLTAGE(VCE)=1SV
!IOCASETEIIPEIIATURE{tcl=25GC
~ Z.5 I ~ 80S
~
iO
, 2 ~ 12 :
64 ~
~~
~!
~ol.5
CASE TEMP£RArlRE f T I"' ~ 56~
".
~
e;: ,\ ~
g: I
40
32 a
~ 0.5 .L i'\ 24 ;:
16 ~
0
. , .Ii .,.
§ i- s g
,I
6 1 10
0
, '.1 6 11.0
a, '0 COLlECTORCURRENT(Ic)-A
COLLECTOR CURRENT {leI-A
Fig. 13 - Typical transfer characteristics for Fig. 15 - Typical gain-bandwidth product for
2N6496· Fig. 14 - Typical normalized dc beta charac- 2N5038, 2N5039, and 2N6496.
teristics for 2N6354.
130 _____________________________________________________________________
2N5038,2N5039,2N6354,2N6496
COL.LECTOR -TO-EMITTER
VOLTAOE IVa:). 2 V
"
..
~
~ 4
0.5 I I.S
,ASE-To-EMIlTEAVOLTAGE 1V.e-V
'zcs-zoru
2N6354.
: .. :1 : .. ffH:::::: .
COLLECTOR - TO-EMITTER VOlTAGE IVCE)'5V
~ '!iOI;f,:+=~'iij"~;:ftt!=t==r=Rt....j~H~
:~~ ~r~1 ~ ~
!
·II,:,,~;..
"'I-H-t+HH-t+I-r"-+-,\+t-t+-++t+l
...... _ . . .11·:;,·".·
:iII'C£i ... 11.",··.. ~ 100 CA.SETEMPERATUAE ITCI'2S" c
·~~~iSkI~H-tW
4~~'~'~f4";'~'~~~:H:~F·:~'::~;~"~·'¥"~'·~'·+·~··4··~·fi~~~~~~~~·~·H.. irr#.~.
... -, .....
.. .. ; 5o'I-+-+-H1-I-H+t---t---t-t'I't--t--t-Ttf
...... , :12;:: ;::. •. ,.::

I'"
I" -
g
~5_
2. .. I I
I: ".1 Z " II. 2: ... 1
0.1 , 10
:;,: ~: ..
COLLECTOR CURRENT {leI-A ""
"1'
4 6 B 10 4 6 B IX) 4 6 BtOOO Fig. 19 - Typical de beta characteristics for

2N5038.
COLLECTOR-lO-EMITTER VOLlAGE (VCEI-V ---.as
J,
COLLECTOR-lO-EMITTER 'VOLTAGE (Va'- 5 v
I I
~ 100
I
ffi
- t- tii
~ "V -
~lUI\£ tTcl· ...J.l
"
•~ ,.r
.
I
~
;
~
25 rr--
-
1EtapE.\l.
- ." ---
f'-
~
..
8
6
g •
, ... , .. .
0.1 r
-)
,
...
z
"'. 4
COlLECTOR CURRENT (lcl-A
'"
:3
U
.'"
0
u
~ :.:::
2N5039.
~ .;.:.
0
u .,.
OJ
8
6
"-,':
'" 'L '-'c
2 4 6.
1000
.. .....
, ,
COLLECTOR CURRENT lIe I-A
I-v Fig. 21 - Typical de beta characteristics for

'2CS- ZOIU
Fig. 17 - Maximum operating areas for 2N6354. 2N6496.
________________________________________ ~--------------------------_131
POWERTRANSISTORS _____________________________________________________
2N5038, 2N5039, 2N6354, 2N6496

2 CASE TEMPERATURE ITC I ' 25' C CASE TEMPERATURE (1CI-25·C
BASE S[RIES "RESISTANCE (R B I '
30 BASE SUPPLY VOLTAGE {VSS)'-4V
" '''IOUCTANCE ILl'lOO pH
00
,
., ~ '00
-~'ti:~G(-
, fI
,,0
(~-;=~ V- 1000
'v,
,'fl v/ V
"
"
B 10 2 "0 '0 '0 60 eo
INOUCTANCE III - ~H BASE S[RIES RESISTANCE (Re)-f!.
COLLECTOR-TO-EMITTEA SATURATION VOlTAGi [VCEI.atl]-V 92CS-I~46~1"
92CS-Z0127
Fig. 23 - Maximum reverse-bias, second- Fig. 24 - Maximum reverse·bias, second·
Fig. 22 - Typical saturation volrage charac- breakdown characteristics for
breakdown characteristics for
teristics for 2N6354. 2N5038 and 2N5039.
2N5038 and 2N5039.
CASE TEMPERATURE I Tc I- 2~·C

CASE TEMPERATURE (T C }·25·C
eASE SUPPLY VOLTAGE 'VBer~4V
.,
BASE SERIES RESISTANCE 'Rel.zon
10
INDUCTANCE fU-200 ... H -
/ 500 ...H I
~
7~0I'H
, j--. .-"" -- IOOO,-H t--

/' ~ I ................
.
1
, /
'···;·L, . r.r ..........

OJ ...
./
, /v
, 0 20 .0 60
BASE SERIES RESISTANCE fReJ-Sl
.0 '00 E .... ......;":'~: .......... .
INDUCTANCE ILI-,..H
CDLLECTOft CUA"EIIIT(Icl-~
Fig. 25 - Maximum reverse-biss, second-
breakdown characteristics for Fig. 26 - Maximum reverse-bias, second- Fig. 27 - Typical rise· time and fall·time
2N6496. breakdown characteristics for characteristics for 2N5038, 2N5039,
2N6496· 2N6496.
PULSE DURATI0ft-201'1
REPETITION RATE -lkH,
COLLECTOR SUPPLY VOLTAGE (Vcclw 30 V
CASE TEMPER.t.TURE (TCI-25·C
ISI-182·XC"O
,of-+--+-,Ifc-.+cil+i.-4T"-cgs *.
•••• ..,.dli;;:.:;·
•.• P:+..·'4"'dd ~ 0.2
I •. ' •• y " "

~ 0,1
'I
4 Ii 8 10 12 '" 6 ,8 10 12
COLLECTOR CURRENT !tcl-A
COLLECTOR CURRENT {lei-A '2C$-20125
COLLECTOACURRENTtlc)-A
Fig. 29 - Typical rise- and fall· time charac· Fig. 30 - Typical storage-time characteristics
Fig. 28 - Typical storage time characteristics
teristics for 2N6354. for2N6354.
for 2N5038, 2N5039, 2N6496.
132 ___________________________________________________________
2N5050,2N5051,2N5052
Features:
High-Voltage Silicon N-P-N Transistors • Economy types for ac/de circuits
• Fast turn-on time at high collector current
For High-Speed Switching and Linear-Amplifier Applications
The RCA-2N5050, 2N5051, and 2N5052 converters, inverters, deflection- and hi-fi
are silicon n-p-n transistors with high break- amplifiers.
down voltages and fast switching speeds. The 2N5050, 2N5051, and 2N5052 tran-
·Typical applications for these transistors sistors are supplied in steel JEDEC TO-213MA
include high-voltage operational amplifiers, hermetic packages.
high-voltage switches, switching regulators, TERMINAL DESIGNATIONS

2N50S0 2NSOSl 2NS052
• V eBo ' 125 150 200 V
• VCEO ' 125 150 200 V
6 V
• V EBO '
2 A
• IC'
ICM . 4 A
• lB' . A
• PT 0 _______ ~ W JEDEC TO-213MA
TC up.to25.C . . : . .
T C above 25 C, derete "nearly. _ _ _ _ 0.266 w/·e (See dimensional outline "N".)
_____ -65 to 200 _ _ _ _ ·C
• T stg . . . • . . • .
_ _ _ -65 to 175 _ _ _ _ ·C
• Te· . . . . . . . . .
• TL COLLECTOR -TO-EMITTER Wll.TA8l (YCI). 5 v
At distence ~1/16 in. (1.58 mml from seating
plane for 105 max.. .
______ 235 ·e 20(
~t'\
III
11"° III
,s ~. .e
I~IOO
~L ~
~
.
I
, . 10
, 10'
."
;;0
COLLKTDR CURRENT IICt- ...
'2tS-KJeU

alltypas.
COLLECTOR-TO-EMITTER VOLTAGE (VCEI- V

Fig_ 3 - Typical collector-to-emittar saturation
voltage as B function of collector
cunwnt.
-
92CM-305!l9
Fig. 1 - Maximum operating areas for all types.
______________________________________________________________ ~-- ___ 133

2N5050, 2N5051, 2N5052
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25"C 'Vet)- 10 V

COLUCTOR-TO-£MITTDt VClLTA8[
I
I ~J I-W- t-J/j-
I p
CHARACTERISTI(
TEST CONDITIONS
VOLTAGE CURRENT
2N5050
LIMITS
2N5051 2N5052 Units

.
c
I
40
I~f 11 lL
Vdc Adc ~'" $'
if
Min. Max Min. Max Min. M8x.
i
} -'-
VCE VBE IC IB
. ~ 20 I /
125 -1.5 - 0.5 - - - - ! L
* ICEX 150 -1.5 - - - 0.5 - - 10
Ii /
/
AtTC=150°C
200
125
150
-1.5
-1.5
-1.5
-
-
-
-
-
5
-
-
-
-
-
5
-
-
-
0.5
-
- rnA
° V
••
......- ...-
/
..
200 -1.5 - - - - - 5
Fig. 4 - Typical input characteristics for all types.
62.5 - 0.1 - - - -
* ICEO 75 - - - 0.1 - -
100 - - - - - 0.1
* lEBO -6 0 - 0.1 - 0.1 - 0.1
* VCEO(sus)b 0.2a 0 125 - 150 - 200 - V

5 0.758 25 100 25 100 25 100
* hFE 5 18 25 - 25 - 25 -
5 2a 5 - 5 - 5 -
* VBE 5 0.758 - 1.2 - 1.2 - 1.2
* VCE(sat) 0.75 8 0.1 - 1 - 1 - 1 V

28 0.4 - 5 - 5 - 5
ISlb 100 0.15 - 0.15 - 0.15 - rnA

COLLECTOR CURRENT (Iel-A
* Ihfe l f = 5 MHz 10 0.25 2 - 2 - 2 - Fig. 5 - Typical rise time 8$ a function of collector

current.
* hfe f = 1 kHz 10 0.25 25 - 25 - 25 -
* Cobo f= 1 MHz 10c 0 - 250 - 250 - 250 pF
* tr 20d 0.75 0.1 - 0.3 - 0.3 - 0.3
* ts 20d 0.75 0.1 - 3.5 - 3.5 - 3.5

/.IS
* tf 20d ~.75 0.1 - 1.2 - 1.2 - 1.2
1ROJC 13.7 1 - 13. 7 1 - 0

13.7 1 CIW 1
• In accordance with JEDEC registration data. C VCB value
a Pulsed: pulse duration = 300,.,.5, duty factor ~2". d Vee value
b CAUTION: The sustaining voltage VCEO (sus) MUST NOT be measured on a curve tracer. See circuit,
Fig. 9, or equivalent, to measure VCEO(sus),
COf.UCTOR CURRENT ctc1-A
Fig. 6 - Typical storage time as a function of

collector current.
PULSE DURATION_ZO II.

R£P£TIT1ON RAft -1000 PULSE".
re-o.nA;fe-o.IA
CASE TEMPERATURE ITc).ze-c
" . !II"
2.2 ~
I,
~ 100 I~ zoo 2~ 300 3~
COt.LECTOR CURRENT I1c 1-A COLLECTOR SUPPLY VOLTAOE (Vccl-V 92C"";JO$e&
Fig. 8 - Typical rise, fal/, and storage time as 8

Fig. 7 - Typical fall time 8S a function of collector
function of col/ector supply voltage.
current.
134 ________________________________________________________________
2N5239, 2N5240
High·Voltage Silicon N·P·N Transistors Features:

• High voltage ratings: VCER(SUS)
For High-Speed Switching and Linear- = 350 V, RBE ~ 50 Q (2N5240)
Amplifier Applications in Industrial and =
250 V, RBE ~ 50 Q (2N5239)
Commercial Service • High power dissipation rating:
PT = 100 W at VCE = 150 V,
The RCA-2N5239 and 2N5240· are amplifiers, inverters, deflection cir-
TC 25°C =
• For switching applications where
multiple epitaxial silicon n-p-n power cuits, switching regulators, and high- circuit values and operating condi-
transistors employing a new overlay voltage bridge amplifiers. tions require a transistor with a
construction with several emitter These types differ in breakdown high second breakdown rating (IS/b)
sites. voltage and leakage current values. (limit line begins at 150 V)
The high breakdown voltage ratings The 2N5239 and 2N5240 are supplied
in steel JEDEC TO-204MA hermetic • Exceptional second-breakdown:
and exceptional second-breakdown
capabilities of these transistors packages. 0_67A at VCE = 150 V
make them especially suitable for 'RCA Dev. Nos. TA2765 and TA2765A, respec· • Maximum area-ot-operation curves
use in series regulators, power tively. tor dc and pulse operation
MAXIMUM RATINGS, Absolute-Maximum Values

2N5239 2N5240
• VCBO······.··················.············.· 300 375 V
VCER(SUS)
RBE~ 50Q ................................ . 250 350 V
• VCEO(SUS) ................................... . 225 300 V
6 V JEDEC TO-2D4MA
• VEBO········································
'IC .......................................... . 5 A (See dimensional oulline "AU.)
'IB .......................................... . 2 A
• PT
TC ~ 25 DC and VCE ~ 150 V .................. . 100 W
TC ~ 25 DC and VCE > 150 V ... " ............. . _ See Fig. 1 _
TC > 25 DC and VCE > 150 V .................. . _ SeeFig.1 and2 _
·Tstg,TJ ..................................... . - 65 to 100 DC
TL
At distance ~ 1132 in. (0.8 mm) from seat-
ing plane for 10 s max ....................... . 230 ___ ·C
'In accordance with J EDEC registration data
50 75 100 125 150 115 200

CASE TEMPERATURE IT c1 - ·c
Fig. 1 -Derating curves for both types.
. '00 COLLECTOR-fO-EMITTER VOLTAGE IVaI-IOV
•. f 040
~
z
a
i
:\
1\
i'-..
~
1
.~
CASE-TEMPERATURE
CHAf4GE t~Tc 1=50·C
I
s
0
r--
ffi
~
3D
~
_ ..tl.tH ,~
-t-
= r--- "'~#.. [- ..~">.c

.
~
<;
'I--
1\ r'-~
,-......,
I
i
I
~
E 20 r-- J _-
c· V-
~
':'\
~ I--
1\ I'\i iI ! 'or-.J ~
~~jy'i~r~c "U~
;
'0
10'
, 10 4
IO!>
, 10 6
,eo
10
... 100 II(
EXTERNAL SASE-lO-EMITTER RESISTAHCE tRSEI-.n
~
g
no, 0 n, to
COLLECTOR CUFlR[NTUci-A
0
Fig. 2 - Thermal-cycling rating chart for both

types. Fig. 3 -Sustaining voltages as a function of Fig. 4 - Typical de beta characteristics for both
base·to·emitter resistance for both types.
types.
__________________________________________________________________ 135
2N5239, 2N5240
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) 2SoC unless
otherwise specified
CHARACTERISTIC VOLTAGE CURRENT
V de Ade 2N5239 2N5240 UNITS
VCE V8E IC 18 Min. Max. Min. Max.
ICEO 200 0 5 2 - -
'CEV 300 -1.5 4 - - -
375 -1.5 - - 2 mA -
(TC = 150°C) 300 -1.5 - 5 - 3
'EBO (VEB - 5 V) 0 - 5 1 -
(VEB = 6 V) 0 - 20 20 -
VEBO 0.02 6 6 - -
VCEO(SUS)a 0.20 225 300 - V -
IVCER(sus)a
(RBE'" 50 Q)
0.2b 250 350 - -
hFE 10 O.4 b 20 80 20 80
10 2b 20 80 20 80
10 4.5 b 5 - 5 -
VBE 10 2b - 3 - 3
VCE(sal) 2b 0.25 - 2.5 - 2.5 V
4.5 b 1.125 - 5 - 5
'Sib (t = 1 s) 150 0.67 - 0.67 - A
ESlb (RBE - 50 Q,
L = 0.2 mH, 4 1.6 - 1.6 - mJ
VEB = 4 V)
Ihfel (f = 1 MHz) 10 0.2 2 - 2 -
hfe (f = 1 kHz) 10 4 20 - 20 -
fr 10 0.2 2 - 2 - MHz
Cobo (f = 1 MHz) 10 c 0 - 150 - 150 pF
R6JC - 1.75 - 1.75 °C/W
*In accordance with JEDEC registration data.
a CAUTION: The sustaining voltages VCEO(SUS) and VCER(sus) MUST NOT be measured on a curve
tracer. These sustaining voltages should be measured by means of the test circuit shown in Fig.14
b Pulsed; pulse duration.; 350 ~s, duty factor.; 2%.
eVes value
BASlSUPf'UVOlTAGE(YB8)o_4V
BASESlRIESREsrST'HCE(l181_IDD
CASfTE.ilPEltATURE(TCI_ 2SOC
.I 4
il'
I'
r
8 I
, ...
BASE-lO-EMITTER VOLTAGE (VBEI-V
Fig. 5 - Typical transfer characteristics for both

types.
COLLfCTtift-TO-£NfTTh YO..1lIIE 'Ycr-v
Fig. 6 - Typical output characteristics for both

types.
--, INDUCTJ.HCE(L)_.H
Fig. 7 - Typical reverse-bias, second-breakdown

characteristic for both types.
136 _____________________________________________________________
POWER TRANSISTORS
2N5239, 2N5240
BAse SUPPLY VOLTACE (VBB)- -, v
10 I"DUCT.ulCE(L)- ~.H
8 CASE TEMPERATURE (Tel· 25· C
6 8+t
."
::: ~ :::: :::: ::::
o • ... ..-t •••••••• t-· ...
8 ~
eASE SERIES RESIHAMCE (lIa) - II
Fig. 9 . Typical reverse·bias, second·breakdown

4
characteristic for both types.
0.1" CASE TENPERATURE {Tel' 25"C

INOUCTANCE (L)' 500 I'H
••.•
E ..-P--P-;f·"'··"j·","'''1'
8 BASESERIESRESISTANCEtRal-lon !:: ........... .
:::Y: [:: ~::n~~ .....................!:: ::.
· 1 1 · [ ; ; ; ; .....................
4 I i i ; ! : ' .... .
o
:;:: 2
8
4 6 8 4 6 8
10 100 1000 -5 -4
SASE SUPPLY VOLTAGE IVSBI-V
COLLECTOR-TO-EMITTER VOLTAGE IVCE)- V 92L5-1',.1I.1
gzLS-19S9R2
Fig. 10· Typical reverse·bias, second·break·
down characteristic for both types.
Fig. B· Maximum operating areas for both
types.
COl..J..£CTOR-T~"ITTEA
Io'OlTAOEt'lQ'-1O V JI\l..S[WImf,.to~
CASE TlMP£RATURE ITC)·2S· C III[~ITKIM RATt-500"ULaSh
~-=-~~~~~"C"JOY
t
!
.., lon(TYP~
6 ,
!
~ nl
If (TYRI
~
}o.e
! 0.4
O~
.. ..
;
, 0.1
, COLLECTOR CURRENT (Iel-A 1.1 2 La 3 U
'.0
~~(JcI-A
COLLECTOR CuRRENT Ucl-A
Fig. 12· Typical saturated·switching time (stor' Fig. 13· Typical saturated·time (turn'on or fall)
Fig. 11 . Typical gain·bandwidth product as a age) as a function of collector current as a function of collector current for
lunction of collector current for both lor both types. both types.
types.
_____________________________________________________________________ 137
2N5293-2N5298, RCA3054
Hometaxial-Base, Silicon N-P-N VERSAWATT Transistors

Features:
General-Purpose Types for Medium-Power Switching and Amplifier
• Low saturation voltage-
Applications in Military, Industrial, and Commercial Equipment veE (sat) = 1 V max. at Ie = 0.5 A
(2N5293,2N5294)
RCA-2N5293, 2N5294, 2N5295, 2N5296, into TO·66 sockets. Types 2N5294, = 1 V max. at Ie = 1 A
2N5297, 2N5298, and RCA3054 are (2N5295,2N5296)
2N5296, and 2N5298 are electrically
hometaxial-base silicon n-p-n transistors. identical to the 2N5293, 2N5295, and = 1 V max. at Ie = 1.5 A
They are intended for a wide variety 2N5297, respectively, but have straight (2N5297, 2N5298)
of medium-power switching and amplifier leads. The RCA3054 is supplied with • VERSAWATT package (molded-
applications such as series and shunt silicone plastic)
straight leads.
regulators, and in driver and output stages • Maximum safe-area-of-operation
. of high-fidelity amplifiers. Types 2N5293, These plastic power transistors differ in curves
2N5295, and 2N5297 have formed voltage ratings and in the currents at
emitter and base leads for easy insertion which the parameters are controlled.
COLLECTOR·TO-SASE VOLTAGE. veBO
COLLECTOR-TO·EMITTER SUSTAINING VOLTAGE
With -1.5 votts (VSE) of reverse bias VCEV(susJ
With external base·to~mitter resistance !Ase' ~ 100 n VCERlsusJ
With baseo~n VCEO(SUS)
EMITTER·TO·BASE VOLTAGE. VEBO
COLLECTOR CURRENT
'e
BASE CURRENT
TRANSISTOR DISSIPATION
At case temperatures UP to 25°C
'.
PT
92CS-27520
BOTTOM VIEW
At case temperaturp.$ above 25°C JEDEC TO·220AA
At ambient temperatures UP to 2SoC 2N5293, 2N5295, 2N5297
At ambient temperatures above 2SoC (See dimensional outline "R".)
TEMPERATURE RANGE-
Storage and Operatmg Uunction).
LEAD TEMPERATURE (O~nng soldering):
AI distance> 1/8 10, (3.17 mm) from ca$e lor 10 s mal<
<tc B
E
I
92CS-27S.9
BOTTOM VIEW
JEDEC T()'220AB
2N5294, 2N5296, 2N5298, RCA3054
(See dimensional outline "S".)
10
COLLECTOR-TO-EMITTER VJ)LTAGE (VCE)-V
92CS-17160RI
Fig. 1 - Maximum operating areas for 2N5293-2N5298. Fig. 2 - Maximum operating areas for RCA3054.
138 ________________________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
2N5293-2N5298, RCA3054
ELECTRICAL CHARACTERISTICS At Case Temperature ITel; 25°C unless otherwise specified

CHARACTERISTIC VOLTAGE CURRENT 2N5293 2N5295 2N5297
SYMBOL V de Ade 2N5294 2N5296 2N5298 RCA3054 UNITS
VCE VBE IC IB MIN. MAX. MIN. MAX MIN. MAX MIN. MAX.
90 -1.5 1
ICEV • 65 -1.5 - 0.5 - - - 0.5 - -

35 -1.5 - - - 2 - - - _.
mA
90 -1.5 - - - - - - - 6
ICEV • 65 -1.5 - 3 - - - 3 - -
(TC = 150°C)
35 -1.5 - 5 - .- - -
ICER 50 05 - - 0.5 - -
(R B E = 100 S2) 20 - - - - - mA
ICER - 2
50 2 - - mA
(TC = 150°C)
-7 0 1 - - - - - 1
lEBO -5 0 - - 1 - 1 - - mA
-4 0 - .- "
- -
4 0.5 30 120 - - - - 25 100

hFE c 4 1 30 120 - - -
4 1.5 20 80 - -
0.1 0 70 - - 55 -
V CEO(sus)C 0.1 0 - - 40 - - - v
01 0 - - - 60 - - -
0.1 75 - - - - - -
VCERlsus)C 0.1 - - 50 - - - - - V
(RBE ' 100 ~!I 0.1 - - - - 70 ,.
60 -
-15 0.1 80 - - - - - -
VCEvlsus)C -1.5 0.1 - - 60 -' - - V
-15 0.1 - - - - 80 - 90 -
4 05 - 1.1 - - - - - 1.7
VBE c 4 1 - - - 1.3 - - - - V
4 1.5 - - - - - 1.5 - -
05 0.05 - 1 - - - - - 1
1 0.05 - - -
VCElsat)C 1 0.1 1 - - - - V
1.5 0.15 .- - - - 1 - -
IT 4 0.2 0.8 0.8 '- 0.8 - 0.8 - MHz
0.5 0.05 a 5 - - - - - -
1 ota - _. - 5 - - - -
tON Vec jJs
= 30 1.5 0.15 a - --. - - - 5 - -
0.5 -0.5 a - 15 - - - - - -
tOFF Vce 1 _O.lb - .- - 15 - - - - jJs

= 30 1.5 -0.15 b - - - - - 15 - -
. HaJC - 3.5 - 3.5 - 3.5 - 3.5 C/W
RaJA - 70 - 70 - 70 - 70 °C/W
_____________________________________________________________________ 139
2N5293-2N5298, RCA3054
. ··
1
IOOB
I
I
II
.•.•
I
I' ••• '.'.' Hl ... ···
,·f·.···
••••
•. 1'.'
;:'
- 1
-~l~~ \;s't!' l.i'tT"I'"

0 'r--- ~ ..
:" iA ,\ , t 'J!;I'
···
'~.
~
10 1---. ~
'.
<;
~
"
\
'\.~...
\ \1\ \.O.'"~•• -t--f--
1"11·
Ii
111.11
It."
f \ [\
\i. \~.. ~\~r-
~ , I I I fl.;. I
~ 'X'\:€ I ; 1".IH·
, ffo, , . ..
'0
10,000
NUMeER OF THERMAL CYCLES
:00 ."
100,000
1 I " 1 10 1 " 1 102 ,j'lOJ
fXTfRNAle.o.SE-TO-EIIITTERR[SI$TAtlCEIRSEI-o
: ';1()4
BHE-TD·EI!ITTERVOLTAGE(VBEI-V
Fig. 3 - Thermal·cycling rating chart for Fig. 4 - Sustaining voltage vs. base· to-emitter Fig. 5 - Typical input characteristics for
all types. resistance for 2N5293-2N5298. 2N5293, 2N5294, and RCA3054.
I.·.· . . . .•.
1 •••• >+1·
I•• , .:. ! ••••.
••••••••••••
, .··.:I: u;
B.l.SE-TO·EMITT£R VOLneE (VBE) _ v

BASe·T()'EMITTER VOL U.GE (VeE) - v
Fig. 6 - Typical input characteristics for Fig. 7 - Typical input characteristics for
2N5295 and 2N5296. types 2N5297 and 2N5298.
I
2.0 2.5
BJ.SE·T(l.EMITTER VOL TAGf (VeE) _ v BASE.YO·EIUTTER VOLTACE {VBel _ v
Fig. 8 - Typical transfer characteristics for Fig. 9 - Typical transfer characteristics for
2N5293, 2N5294, and RCA3054. 2N5295 and 2N5296.
,.
COLUCYOII.TCJ.ElI.lnER VOLTAGE (Vce)
I
a 4V
,..
COLLECT(lft.To·eMITIER VOlT.l.GE (Vee). A V
II I
J
~ ~ I - .1,,0/ ,
: 1.0 ~--l~T -..\
t-- ,- c1.
Ii ..
iL '"~.~
II :5/ 1'\ "-7q;~9
7~"
~~ ,L~- I~"';;>'~
~l'
~ "V-0¥1I ';-" I\~
~
. .. , I , , ." , ., ,
\.
, ... , ." , .,. , ., . , ,.
f\
WE-~.EIiJTTER VOLTAGE (VIE) - v COLLECTOR CURRENT (Ie) _ A

alLlECTQR CURRENT (Ie) _' A
Fig. 10 - Typical transfer characteristics for Fig. 11 - Typical dc beta for 2N5293, Fig. 12- Typical de beta for 2N5295,
2N5297 and 2N5298.. 2N5294, and RCA3054. and 2N5296.
140 _____________________________________________________________________
2N5293-2N5298, RCA3054
COLLECTOR·TO-EOIITTER VOLT.l.CE(Vcel' 4 v --'-,--,.--,n
110
1 COLLECTOR-TO·EMITTER CO'..LECTOR·TD-EilITTER VOLTAGE ('liCE)' 4 V
C.I,)E TEIIPERUURE (Tel " 2~·C
100 [J / -- VOLTAGE (V ). ~ V C,l,!>ETE.IIPERATURE(Tc\_25°C
Wf-f--{1 J ~ i'lf--r-~-b~~~-~~~~-rf-~-r
"70~r7' H±~.r~ ~ '0 f--r./"7"H~f--i--~~f---f'.,rlrl-H
f-+---bHt-f-i--t-+F".·· t--I--
6llh~q.¢';:''+-~ L
50~",,,,..~ ~ al-7"t--H+I-+-- -j-i-t-j---j--f';:H-I
0
L
-UI ~~';7 ~\ §
..1/ 1\\
1\
! 0.6 f--r-~~I--r--~~--rf-rl-r
~ O,41--r-~~I-~-~--H~-rf---t-r
"
, ... ,
COLLECTOR
... , .. , , ., .
CURRE~T (1(:) _ A
I "10 I &
CDlLECTORCURREHT (1(1- m.+.

BUO , "
"
COLLECTOf! CURRENT (1c)- ...t.
,,
\,000
Fig. 13- Typical dc beta for 2N5297 and Fig_ 14- Typical gain-bandwidth product for Fig. 15- Typical gain-bandwidth product for
2N5298. 2N5293, 2N5294, and RCA3054. 2N5295 and 2N5296.
L8J COLLECTOR·TO·EIIITTER VOLTAGe ('liCE)' 4 V

I C.... ~E TEMPERATURE IT ).2$0 c
I"
~ ",f---b-/4+++--l-+-t-H1----t1-".c
'+-1-+1
f lO /
I
, '1m ' 1')00 ' 11,000
COLLECTOR CURRENT U(l- .....
COLLECTOR·lO·EIUTTER VOLTAGE ('liCE) - y COLLECTOR·10·hITTER VOLTAGE (VeE I _ v
Fig. 16- Typical gain-bandwidth product for Fig_ 17- Typical output characteristics for Fig. 18- Typical output characteristics for
2N5297 and 2N5298_ 2N5293, 2N5294, and RCA3054_ 2N5295 and2N5296_
I cm TE."","" "c" 11' C
1.0 '''EC", "" ",> " ..

10 l!.I J<)
COLLECTOR·TO·hITTER VOlTAGE ('liCE) _ V
Fig. 19- Typical output characteristics for Fig_ 20- Typical output characteristics for Fig. 21- Typical saturated switching charac-
2N5295 and 2N5296. 2N5297 and 2N5298_ teristics for 2N5295, 2N5296,
and RCA3054_
_______________________________________________________________________ 141
2N5301,2N5302,2N5303
Features:
High-Current High-Power
• Specification for hFE and VCE(sat) up to 3QA
High-Speed N-P-N Power-Transistors • Current gain-bandwidth product for .. 2 MHz
'min. at 1A·
The RCA-2N5301, 2N5302 and 2N5303 are converters, inverters, and solenoid (hammer) • Low saturation voltage with high beta
epitaxial-base silicon ',;.p-n transistors in· !relay drivers. • High dissipation capability
tended for a wide variety of high·power, These devices differ in maximum voltage
high-current applications, such as power· ratings and VCE(sat), VBE(sat), and VBE
switching circuits, driver and output stages characteristics. All are supplied in JE 0 EC
for series and shunt regulstors, dc·to·de TO·204MA hermetic steel packages.
TEItMINAL DESIGNATIONS
MAXIMUM RA TI NGS, Absolute·Maximum Values:
·2N5301 2N5302 2N5303
o V CBO . 40 60 BO V
o VCEO(susl 40 60 80 V
5 V
• V EBO ·
o IC. 30 A
• ICM 50 A
• lB· 7.5 A
IBM ,15 A
• PT .
AtTC"'25°C 200 W JEDEC TO-204MA
At TC>250C Derate linearly 1.15 W/oc
(Se. dlmenllon'., outline "A".)
See Fig. 1 and 2
• Tstg• T J . - - - -65 to 200 - - - - °c
TL
At distance ;;;;'1132 in. (0.8 mmJ from seating plane
for 10s max. 230 ........- - - °c
• In accordance with JEDEC registration data format JS-6 RDF-2.
CASE TEMPERATURE (TC)-·C
Fig. 2 - Derating CUl1les for 2N5301. 2N5302.

and2N5303.
-: COL.LECTOR- TO-EMITTER VOLTAGE (VCEJ-2V-
i
0
i
· 2
1OOrcAs<,~AT""ITc~1'-
~..,
I ··
s
.
-.,." ~
!
2
~
··
10
'S
@
I
g
2
I
4 6 8 I • S 10 • S
0.1 100
100 COLLECTOR CURRENT (IcJ-A
COLLECTOR-TO-EMITTER VOLTAGE (VcE)-V
92CS-29797 Fig. 3 - Typical de beta characteristics .. a
Fig. 1 - Maximum operatingarsas for 2N5301, 2N5302. and 2N5303. function of collector current for
2N5301, 2N5302. and 2N5303.
142 ______________________________________ ~--------------------------~-

2N5301, 2N5302, 2N5303
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tcl =2~C unless otherwise specified

CHARAC· VOLTAGE CURRENT
TERISTIC Vdc Adc 2N5301 2N5302 2N5303 UNITS
408 - 1 - - - -
* 'CBO 60' - - - 1 - -
80' - - - - - 1
40 -1.5 - 1 - - - -
* ICEX 60 -1.5 - - - 1 - -
80 -1.5 - - - - - 1
* ICEX 40 -1.5 - 10 - - - - rnA

TC = 60 -1.5 - - - 10 - -
150°C 80 -1.5 - - - - - 10
40 - 5 - - - -
* 'CEO 60 - - - 5 - -
80 - - - - - 5
* 'EBO -5 - 5 - 5 - 5
2 lb 40 - 40 - 40 -
2 lOb - - - - 15 60
* hFE 3 15b 15 60 15 60 - -
2 20b - - - - 5 -
3 30b 5 - 5 - - -
* VCEO(;us) 0.2 40 - 60 - 80 -
2 lOb - - - - - 1.5
2 15b - 1.7 - 1.7 - -
VBE 4 20b - - - - - 2.5
4 30b - 3 - 3 - -
lOb 1 - 1.7 - 1.7 - 1.7
15b 1.5 - 1.8 - 1.8 - 2
* VBE(sat)
20b 2 - 2.5 - 2.5 - -
V
20b 4 - - - - - 2.5
lOb 1 - 0.75 - 0.75 - 1
15 b 1.5 - - - - - 1.5
* VCE(sat) 20b 2 - 2 - 2 - -
20b 4 - - - - - 2
30 b 6 - 3 - 3 - -
'SIb
tp = 1 s 20 10 - 10 - 10 - A
nonrep.
ES/b
L= 125JlH,
RBE = 51 n -1.5 10 - 6.25 - 6.25 - 6.25 - rnJ
* Ihfe l 10 1 - 2 - 2 - 2 -
f= 1 MHz
* hfe 10 1 - 40 - 40 - 40 -
f = 1 kHz
t r . (See Fig.S) VCC= 10 1 - 1 - 1 - 1
* ts 30 10 lc - 2 - 2 - 2 JlS
* tf 10 lc - 1 - 1 - 1
ROJC 20 5 - - 0.875 - 0.875 - 0.875 °C/W
• In accordance with JEDEC registration c?ata format JS-6 RDF-1. b Pulsed; pulse duration = 300 jJS,
C I S1 =-I S2 duty factor = 1.8%
________________________________________________________________________ 143
2N5301.2N5302,2N5303
0.01
6 B 10 6 B 100
COLL.ECTOR-TO-EMITTER SATURA~ \IOlTAGE ["cE(ntl]-V COLL.ECTOR CURRENT (Icl-A
Fig. 4 - Typical $8turation voltage characteristics Fig. 5"- Typical transfer charscrer;stics for Fig. 6 - Typical delay-time and rise-time charac-
for 2N5301. 2N5302. and 2N5303. 2N530t. 2N5302. and 2N5303. teristics 8S a function of collector current
for 2N5301. 2N5302. and 2N5303.
10, OOLlECTOR SUPPLY VOlTAGE (Vct;)-30V
~' : XB,--l"1Iz
:lelIa- ID
.
CASE TEW'fRATURE' (Tcl-2'·C
~.
2
I .---
1>
I
::::::"
~
I, V
;;
~
~
g 2
'I'-..
0.1
4 . • 10
COLLECTOR CURRENT (Ic1-A
2 4 ..
100
Fig. 7 - Typical storage-time and fall-time charac-

teristics as a function of col/ector current
for 2N5301. 2N5302. and 2N5303.
144 ____________________________________ ~ _______________________________

POWER TRANSISTORS
2N5320-2N5323
Complementary N-P-N & P-N-P Silicon

Features:
• 2N53221 P-N-P
2N5323 Complements of: 2N5321
2N5320 !
Power Transistors • Maximum safe-area-of-operation curves
• Planar construction for low-noise and
General-Purpose Types for Small-Signal, Medium-Power Applications low-leakage characteristics
RCA-2N5320, 2N5321. 2N5322 and 2N5323 are double· versions of the 2N4036 with all of its additional outstanding • Low saturation voltage
diffused· epitaxial-planar silicon power transistors intended for features. (Technical data on the 2N2102 and 2N4036 are • High beta at high collector current
small·signal medium-power applications: The 2N5320 and shown on pages 29 and 71, respectively).
2N5321 n-pon types are actually high-current, high-dissipation
The devices are supplied in the JEDEC TO-39 hermetic TERMINAL DESIGNATIONS
versions of the 2N2102 with all of the salinet features of that
package.
device. The 2N5322 and 2N5323. p-n-p complements of the
..2N~.=!20 aO.d ?_N.5321. are actua~~y high-current, high-power
MAXIMU.M RATINGS, Ablo/ure·Maxlmum values: 2N5321 2N5323· 2N5320 2N5322 •

• COLLECTOR·TO·BASE VOLTAGE. . ..... VCBO 75 -75 100 ·100 V
COLLECTOR·TO-EMITTER SUSTAINING VOLTAGE,
With 1.5 volts (VBE) of reverse bias, , , .... , . , .. VCEV(sus) 75 ·75 100 ·100 V
With external base-to-emitter resistance JEDEC TO-39
IRBEI • 100 II . (See dimensional oullne "C"_)
. . VCER(sus) 65 ·65 gO ·90 V COLLECTOIt.To.E.IIILnERVOlTAGE(VCE)- 4V
With base open , ,VCEO(sus) 50 ·50 75 -75 V
• EMITTER TO-BASE VOLTAGE. .. VEBO ·5 ·7 V
• COLLECTOR CURRENT .. ..IC ·2 -2 A
• BASE CURRENT. ..IB ·1 1 -1 A
• TRANSISTOR DISSIPATION: PT 10 10 10 10 W
At case temperatures up to 250 C .
Figs. 2 & 5
At case temperatures above 250 C . Derate linearlv at 0.057 WJOC
• TEMPERATURE RANGE,
Storage and operating (Junction) .. -65 to + 200 oc
• LEAD TEMPERATURE (During soldering):
At distance.? 1/32 in. 10.8 mm) from
~
seating plane for 10 s max.
230 oC
* In accordance with JEDEC registration data forma't (JS-6-RDF-l) "Jji , !. '" ' ,. '".' ,. '",' ,. '",
COL.LECTOR CUltREMTII(l_ .....
• For p·n-p devices, voltage and current values are negative.
Fig_ 1 -. Tvpical static beta characteristics
for tvpes 2N5320 and 2N5321_
CDlLfCTOR_To-utnER VOL TAGI'!: (VCE). _.tV
lM~~4+~f-t~~l~~_~+r-r"Hr-r-H~
~
~ICIO 1_....
: c
..,.
"
~ ~
~
i~
c( ~·~-+j~}4~4-~~-H~~tr++H
1u i~~+-hH+-+-hH+-+-hH+-+-t+»~~,-+tH
~
!j
-I,COD
~
Z COlLECTOR OJRItEKT ilcl- .....
1&1
Il:
Il: Fig_ 3 - Tvpical static beta characteristics
:;) ·1 for 2N5322 and 2N5223_
0
Il: 8
~
0
6
1&1
--I
--I 4
0
0
4 6 8 10 2 4 6 8 100 2
COLLECTOR-TQ-EMITTER VOLTAGE (VCEI- V
92CS-t750t8
Fig_ 4 - Tvpical transfer characteristics
Fig_ 2 - Maximum operating areas for 2N5320 and 2N5321_ for 2N5320 and 2N5321_
------------------------------------------_________________________ 145
2N5320-2N5323
ELECTRICAL CHARACTERISTICS, Case Temperature (Tel = 25°C, unless otherwise specified

. VOLTAGE CURRENT
CHARACTERISTIC 2N5320 2N5321 2N5322 2N5323 UNITS
Vde mAde
B~ - 0.5 - - - - - -
60A - - - 5 - - - -
* 'CBO -8oA - - - - - -0.5 - - I1A
-6oA - - - - - - - -5
100 -1.5 - 0.1 - - - - - -
75 -1.5 - - - 0.1 - - - -
* 'CEX -100 1.5 - - - - - -0.1 - - mA
-75 1.5 - - - - - - - -0.1
70 -1.5 - 5 - - - - - -
Tc = 1500 C
45 -1.5 - - - 5 - - - -
mA
-70 1.5 - - - - - -5 - -
-45 1.5 - - - - - - - -5
-7 0 - 0.1 - - - - - -
-5 0 - - - 0.1 - - - - mA
7 0 - - - - - -0.1 - -
* 'EBO
5 0 - - - - - - - -0.1
-5 0 - 0.1 - - - - - -
-4 0 - - - 0.5 - - - -
- - I1A
5 0 - - - -0.1 - -
4 0 - - - - - - - -0.5
-1.5 0.1 100 - 75 - - - - -
V(BR)CEV V
1.5 -0.1 - - - .- -100 - -75 -
VCER(sus)a 100b 90 - 65 - - - - -
V
RBE = lOOn -100b - - - - -90 - -65 -
100 b 0 75 - 50 - - - - -
* VCEO(sus)a V
-100b 0 - - - - -75 - -50 -
* VCE(sat)
500b 50 - 0.5 - O.B - - - - V
-500b -50 - - - - - -0.7 - -1.2
* VBE
4 500b - 1.1 - 1.4 - - - - V
-4 -500b - - - - - -1.1 - -1.4
4 500 b 30 130 40 250 - - - -
* hFE -4 -500b - - - - 30 130 40 250

2 1000b 10 - - - - - - -
-2 -1000b - - - - 10 - - -
* Ihfel 4 50 5 - 5 - - - - -
f~ 10MHz -4 -50 - - - - 5 - 5 -
50 200 - 200 - - - - -
IS/bd -35 - - - - -285 - -2B5 - mA
• 30 500 50 - 80 - BO - - - -
ns
tON -30 -500 -50 - - - - - 100 - 100
30 500 50 - BOO - BOO - - - - ns
• tOFF -30 -500 -50 - - - - - 1000 - 1000
• R8JC - 17.5 - 17.5 - 17.5 - 17.5 °CIW
ROJA - 150 - 150 - 150 - 150 oCIW
• VCB
* In accordance with JEDEC registration data format (JS·6 RDF-1)
a CAUTION: The sustaining vOltages VCEO(SUS) and VCER(SUS) MUST NOT be measured on a curve tracer.
<
b Pulsed; pulse duration 300 J.Is. duty factor < 0.02.
d Pulsed; 0.4 s non-repetitive pulse.
146 ________________________________________________________________________
POWER TRANSISTORS
2N5320-2N5323
i -I
<>
...
.... BASE· TO-EMITTER VOLTAGE {Yet:I- v
~
II:
II: Fig. 6 - Typical transfer characteristics
::>
u
for 2N5322 and 2N5323.
II:
...~
..J
~-o.1
u
2 468 2 468 2
-I -~ -~O BASf.T()'EIUTTER V'OL TlGE (VBE}-V
COLLECTOR-TO-EMITTER VOLTAGE IVCEI-V

Fig. 7 - Typical input characterisitcs for
92CS-17547
2N5322 and 2N5323.
Fig. 5 - Maximum operating areas for 2N5322 and 2N5323.
." _,0
-.
BASE CUAAENT lI.el· -2M'"
-0.,
IIlSE_rQ.EIIJTTER VOLTAGE tVae1-V

... COLt..£CTOR-TO-EIllfTTER VOLTAGE (VCEI-V
~ ~ ~ ~ ~
COUECTOR-TO-EMITTER VOLTAGE (VeE I - v
4 ~ ~
Fig. 8 - Typical input characteristics Fig. 9 - Typical output characteristics Fig. 10 - Typical output characteristics
for 2N5320 and 2N5321. for 2N5322 and 2N5323.
for 2N5320and 2N5321.
________________________________________________________________________ 147
POWERTRANSISTORS ________________________ ~ ______________________________
2N5415,2N5416
Features:
Silicon P-N-P High-Voltage Transistors
• 2N5415: p-n-p complement of 2N3440·
2N5416: p-n-p complement of 2N3439·
For High-Speed Switching and Linear-Amplifier
Applications in Military, Industrial and Commercial Equipment
The RCA-2N5415 and 2N5416. are silicon voltage, low-current switching and series VCBO = -350 V max. (2N5416)
p-n-p transistors with high breakdown volt- regulators. VCEO =-300 V max. (2N5416)
ages, high frequency response, and fast The 2N5415 and 2N5416 are supplied in the -200 V max. (2N5415)
switching speeds. JEDEC TO-39 package.
These transistors' differ primarily in their TERMINAL DESIGNATIONS
voltage ratings. Typical applications include ·Formerly RCA Dev. Types TA2819 and TA2819A.
high-voltage differential and operational am- -Data on types 2N3439 and 2N3440 are given in
plifiers; high-voltage inverters; and high- RCA data bulletin Fi Ie No. 64.
MAXIMUM RATINGS. Absolute-Maximum Values:

2N5415 2N5416
* V CBO ' -200 -350 V
VCER
RBE=SOf! -350 V (See dImensIonal outline "Cn _)
• VCEO ' -200 -300 V
• V EBO ' -4 -6 V
• IC' -1 -1 A
• lB' -0.5 -0.5 A
• PT
TC ';;;2So C 10 10 W
Tc> 2SoC See Figs. 1 and 2
TC';;;SOoC 1 1 W
TC>SOoC Derate linearly at 6.7 6.7 mWi"C
• Tstg• TJ -65 to +200 °c
• TL •
At dfstance ~ 1/32 in. (0.8 mm) from seating plane for 105 max. 255 °c ~'
*10 accor'dance with JEDEC registration data format (JS-9 RDF-8).
25 50 75 100 125 ISO 115 200

CASE TEMPERATURE (Tcl _·C
Fig. 2 - Dissipation derating curve.
COUECTOR.TO-UITTER VQlTAGE('tCE) "'·10 Y

'00
V I-
!9G ,....
~ 80
1/
i 70
~ I-: ".t
rr
j "f- f-¢,.~~'\'cl- 1.1 ~,.C
30 f-
~II
;
~
~ m
~ J....l.-I.I- ITi W
IS "
rm Ir .r ~\
_0.1 l 4 5 I_I 1 4 ' ~ 10 1 ' i ~IOO 1 4 '-'OlIO
COLLECTORCURRfMT(JC)_ .....
COLLECTOR -TO-EMITTER VOLTAGE (VCE)- V Fig. 3 - Typical de beta characteristics for

92CS-17668RI
both types.
Fig. 1 - Maximum safe operating areas.
148 _____________________________________________________________________
_________________________________________________________ POWERTRANSISTORS
2N5415,2N5416
ELECTRICAL CHARACTERISTICS, Case Temperature (Te) = 2SoC COLLEClOR-TO·EIIITlER VOLUC;E (VCE)

C.,uETEIiPERUURE(Tcl- we
CHARACTERISTIC VOLTAGE CURRENT UNITS

V de mAde 2N5415 2N5416
VCB VCE VBE IC IB MIN. MAX. MIN. MAX.
-250 0 - - - -50
ICEO -150 0 - -50 - - Il A
/
-100 0 - - - -
• ICBO
IE = 0
-280
-175
-
- -50
- -
-
-50
- IlA
., ..
~
, .,
~ '00
COlLECTOR CURRENT "el _ .. A
.. , ~ '000
-300 1.5 - - - -50 Fig. 4 - Typical gain-bandwidth product for

hoth types.
ICEV -200 1.5 - -50 - - Il A
-150 1.5 - - - -
• 6 0 - - - -20
lEBO IlA
4 0 - -20 - -
-10 -50 b - - 30 120
• hFE -10 -50b 30 150 - -
-10 -35b - - - -
VCEO(sus) -50 0 -200" - -300a - V
VCER(sus)
-50 - - -350" - V
RSE = 50 Q
VBE -10 -50 b - -1.5 - -1.5 V
VCE(sat) -50 b -5 - -2.5 - -2 V

COLLECTOR CURRENT (lc)-mA
• hie -10 -5 25 - 25 - Fig. 5 - Typical collector-to-emhter saturation

1= 1 kHz voltage for both tvoes.
• Ihlel -10 -10 3 - 3 -

1= 5 MHz
• Re(hie)
-10 -5 - 300 - 300 Q
f = 1 MHz
• Cib 5 0 - 75 - 75 pF
f = 1 MHz
• Cob -10 - 15 - 15 pF
1=1 MHz
ISlb -100 HOD - -100 -

mA
tp = 0.4 5 nonrep. -75 - - - -
RaJC - 17.5 - 17.5 °CIW BASE-lO-EMITTER VOLTAGE IVBE}-V
Fig. 6 - Typical input characteflSCics for

* In accordance with JEDEC registration data format tJS-9 RDF-8L both types.
a CAUTION: The sustaining voltages VCEO(sus) and VCER(sus) MUST NOT be measured on a curve tracer.
The sustaining voltage should be measured by means of the test circuit shown in Fig. 12.
b Pulsed: Pulse'" 300 J.1s; duty factor ~ 2%.
60 "Xl
COLLECTOR CURRENT IIc}-mA IZCS-175ISIII
Fig. 7 - Typical turn-on time characteristic

for both types.
________________________________________________________________________ 149
POWER TRANSISTORS
2N5415,2N5416
2.'
:
I
20 60 80
COlLfCTOR.TO·EIoIITTER VOLTAGE ('ICE) - Y COLLECTOR CURRENT 11CI-II'IA BASE.lO-EMITTER VOLTAGE (Vee) - v Wll$l
Fig. 8 - Typical output characteristics for Fig. 9 - Typical storage-time characteristic for Fig. 10 - Typical transfer characteristics for
both types. both types. both types.
25mH
MERCURY RELAY
-Vee (0 TO 50'1,
100mA) ---~---t.-
CLARE HGP-I004
8 AI 1
OR EQUIVALENT I I
I I
TO
I I
HEWLETT- I I
PACKARD I I
OS< I I
MODELI30a
CHANNEL 8 OR EOUIV.
-200 -300
4;---~-1f---o
COLLECTOR-TO-£MITTER VOl.TAGE t'te
In ,25S-57I""
Q.5W
COMMON
The sustaining voltage VCEObul1 illlcceptable whln the trace
falls to the right and above point "A" for type 2N5416. Th,
trace must fall to the right and above point "8" for type
COLLECTOR CURRENT tIcl-mA
2N5416.
Fig. 11 - Typical fall-time characteristic for both Fig. 12 - Circuit used to measure sustaining voltages, F~ 13. ':"'" O~iIIoscope
d#p/ay fat measurement of
types. VCEO(sus) and V CER(sus} for both types. - ~~staFniniivoltag8s (test circuit shown in Fig: 12).
CASE TEMPERATURE(TC I · 2S-C
~»
bul
........
~ I -340f-+-HH-H--f"...HH-H+-Ht-H
~]e' ~
ii: 'f.'--f--HH-H-f--'I-H--!--t-i-t-tl
330
~~
!~-32of-+-'-HH-H+-PH-H+-t-t-H
\
o!!
.. :5 .310f-+-H-f-f-+-H-I'I.r-..,.-t---t-+H
~~ I" VCfO(SIJSI
~~ • 30o f-+-H+f-+-H+H-f'-''F-rrl
8- l
10 4 6 100 II(
EXTERNAL BASE-lO-EMITTER RESISTANCE (RBEI- n

resistance for type 2N5416.
150 _____________________________________________________________________
--------__________________________________________________ POWERTRANSISTORS
2N5490-2N5497
FEATURES
Hometaxial-Base, Silicon N-P-N . e low saturation valtage-
= =
VeE(.ot) 1 V mo., ot ie 2 A (2N5490, 2N5491)
VERSAWATT Transistors = 1 V mo., ot ie = 2.5 A (2N5492, 2N5493)
= =
1 V mo •. ot ie 3 A (2N5494, 2N5495)
= 1 V mo., ot ie = 3,5 A (2N5496, 2N5497)
General-Purpose Types for Medium-Power Switching and Amplifier Applications in
e VERSAWATT package (molded silicone plastic)
Military, Industrial, and Commercial Equipment eMaxim'Um safe.area-of.operation curves specified for
DC and pulse operation
RCA·2N5490, 2N5491, 2N5492, 2N5493, These plastic·package power transistors differ
2N5494, 2N5495, 2N5496 and 2N5497' in voltage ratings and in the currents at which
are hometaxial-base silicon n-p-n transistors. the parameters are controlled,
They are intended for a wide variety of -Formerly RCA Dev, N05, TA7317. TA7318.
medium·power switching and amplifier appli· TERMINAL DESIGNATIONS
TA7315, TA7316, TA7313, TA7314, TA73".
cations, such as series and shunt regulators TA7312. respectively,
and driver and output stages of high·fideiity
amplifiers,
Types 2N5491, 2N5493, 2N5495, and 2N·
5497 have formed emitter and base leads for
insertion into TO·66 sockets, Types 2N5490,
o
2N5492, 2N5494, and 2N5496 are elec·
trically identical .to the 2N5491, 2N5493, BOTTOM VIEW
2N5495, and 2N5497 but have straight ieads,
JEDEC TO-220AB
2N5490
2N5491 2N5490 2N5494
Maximum Ratings. ;\b ... (}lul('~·\Jm:imum \'lIlw's: 2N5494 2N5492 2N5496 2N5492 2N5496
2N5495 2N5493 2H5497
(,OI.I.r:(,Tlllt-To-n"~~: VOI.TAm: , , \'( 'lit) titl nil \' (See dimensional oulllne "S".)
('ULI.~:t'TOR-TO-~:~IIT'I'I·:R ,I'~T,\I~i~l; VOI.'rAI;i':'
With -1.5 volls (VUEI ofn· ..·l'r!uo hUH. . . . . . . . . . .. \'I'1.;\,i!'4us\ t j~ I 7.i fill \'
With t1xtl'rnal hn~~·-to-I·lIuth·r n'lu~l!ml'(' fHUE' lUO, . . \'('EHi!'tUl-il ,-,II Ii;) KII \'
With hUSt, opt'n .. . . . . . . . . . . \'j'I';Utsus', 411 ;"1;) 711 \.
~;~nTn;R-TO-HASr: \'OI.T,\(;E, \'i':"() \'
('aU.ECTOR CURRENT, 1('
IlAS~: CURR~;NT , . , , , ' ill "
TRA,'1S1STUR llL-;'~ll',\'rlOS: 1''(' "
At ('ust> tl'n1pt'rutlD'(,s up til 25"(' . . . . . . . . . . . . . . . flO :"lO BOTTOM VIEW 9ZCS-2.75Z0
At nmbipnt tl'mpt'rnturl's up tll :l,su(. \,K I.K I.H
''\'t l'RfU." tempt'rHturC's UhtlVl' 25"(' Ilt'ralc' II1\1'arl.\· at nA W u(' IIr Sol'l' Figs. 1 & 2
At nmbif."nl tempcorulun'K uhovC' ;lllll(, III'rah' llne'arly .It n.0144 \\" 0('
JEDEC TO-220AA
-
n:MPl-:R'\TUR~: R,\Sm:: 2N5491 2N5495
2N5493 2N5497
-
St(rltge & Op<-rHting (.JundIOIIJ
Ll·;;\ll T":"IPEHATlllU: (llurinK Stlhh'rIllKJ:
(See dimensional outline "R".)
Atdistnnl'l';: 1/Hin.(3.17mmll'nIRll'a!H'fclrlll!'l mal( .. ,
COLLECTOR MILLIAMPERES (leI "100 I

~- 8!l,L'
§!~ear..,:C!,,':'tRT-i:'t:~r':-': r':U-t'a. ,'-f(~~F~;.;~~::c"t;'-t+t--H-tt+-t--ll-H-l
~r ''I---t-- JIlJh IH-rf-tfl"-<I::-+1Ift-+I-++tI
UU--j-L--j-1+t1
LJ-t-t1+t-
H,JCE! l(ll'4~z lal~J93! VCiO
ffi~ 65 I I III I I III I,... I
~:s soH--+-++H-t-t+H-t-tfhlo--l+tt-+--H+l
h "I 1 I 111--l1_+-Il-lII-l--lII_++1IH---Jf-f'l'i+v",cE~o'++-H
~i ~5494 a 2N5495) I
~~ ~o r-t-
12N5490 a 2NS4911 I
~ •• I IIII I 1111 I I "cEO
a • " III 125 lSI US 211

u :0 I I III I I III I I I
'0
EFFECTIVt CASE. 'flIII, 01 WE TtWt,(TEFf 01 TCI-IC COLLECTOR-TO-EMITTER VOLTS (VCEI 8ASE-TD-EMITTER R[SLSTANCE ~R8EI-OtiM~zCS_14982F11
Fig. 1 - Doratlng .urvo for types 2HS490 through 2H5497 Fig. 3 - Collector.to·emitter sustaining voltage charae~
Inclusive. Fig. 2 - Maximum operating areas lor types 2H5490
through 2H5497 indusive. fer/sties for types 2HS490 t"roug" 2H5497 InclusIve.
________________________________________________________________________ 151
2N5490-2N5497
ELECTRICAL CHARACTERISTICS. Case TemperatuTfl (Td = 2ff'C Unl_ Otherwi,. $p/Jcif/ed
DC Types Types Types Types

Characleristic Symbol Voltage DC 2N5496 2N5494 2N5492 2N5490 Units
(V) Current (A) 2N5497 2N5495 2N5493 2NS491
VCE VBE IC IB Min. Max. Min. Max. Min. Max. Min; Max.
85 ·1.5 1
Coliector·Cutoff Current ICEV 55 ·1.5 1 mA
With base·emitter junction 70 ·1.5 . ~
1
reverse biased 85 ·1.5 5
ICEV 55 ·1.5 5 mA
(TC = 150oC) 70 ·1.5 5
70 0.5
ICER 40 0.5 2 mA
Coliector·Cutoff Current
With external base·to·emitter 55 0.5
resistance (R BE ) = 100 n 70 3.5
ICER 40 3.5 5 mA
(TC = IS0 0C) 55 3.5
Emitter·Cutoff Current lEBO -5 1 1 1 1 mA
4 3.5 20 100
4 3 20 100
DC Forward-Current Transfer Ratio hFEc 4 2.5 20 100
4 2 20 100
Collector· to· Emitter Sustaining
Voltage: VCED{SUS)c 0.1 0 70 40 55 40 V
With base open
With external base·to·emitter 0.1 80 50 65 50 V
VCER{SUS)c
resistance (R BE ) =100 n
With base·emitter junction VCEV{SUS)c
reverse biased ·1.5 0.1 90 60 75 60 V
4 3.5 1.7
4 3 1.5
Base·to·Emitter Voltage VBE C
1.3 V
4 2.5
4 2 1.1
3.5 0.35 1
Collector·to-Emitter VCE{sat)c 3 0.3 1 V
SatlJation Voltage 2.5 0.25 1
2 0.2 1
Gain·Bandwidth Product fT 4 0.5 0.8 0.8 0.8 0.8 MHz
Sat. SWitching Time: 3.5 0.35a 5

Turn-On I ton VCC = 30 3 O.JD 5 ,..s
2.5 0.25a 5
2 0.2 5
3.5
.3
0.3t 15
Turn·Off toff VCC = 30
2.5
O•
0.25b
.. 15
IS - ,..s
- 2 0) 15
Thermal Resistance:
Junction·to-Case 8 J•C 2.5 2.5 2.5 2.S °C/W
Junction·to-Ambient 8J•A 70 70 70 70 °C;W

a I.. value (fur ...... base c .. /enl). .. 182 .llue (1.. 1\0011 blse c .. /enl), C Pulsed, pulse dulilion = 300 ,..1, dety rIC!" = .011.
152 ________________________________________________________________________
2N5490-2N5497
COLLECTOR-lO-EMITTER VOLTS (VeE}-" COU.ECTOR-TQ-EMITTER VOLTS (VCEI·4 COLLECTOR-TO-EMITTER VOLTS (VCE)·4
I 120 I IL II I
100
~W// T'
~~~
~o
~
;:'60
~40 f- f-
~
r- t- I'I
,-t;
111
<-'
c.~~!.;--P
.>-
t-:. . c>. ~
,
~'2100
~.t:
i~ ao
![
i l'i'
I
i
/
,1c-~-T-
\l~~_
\
,~
'", "'.
~
~r
20
'10-, I 0
.L
20
,
0
, , ," , ,
COLLECTOA AMPERES (Ie)
.. , , .. COLLECTOR AMPERES !Ie)
0
,I , "" , ." , ."
COLLECTOR AMPERES Ucl
, -4.
Fig.4 • Typical static b.ta characteristics for Iypes Fig.S " Typical static beta characteristics lor types Fig.6 _ Typical static beta characteristics lor types
2H5490 through 2N5493 inclusive. 2N5494 and 2N5495. 2N5496 and 2N5497.
COLLECTOR-lO-EMITTER VOLTS (YeE) 04

CASE TEMPERATURE (TC j . 25'C
i 24
~ 2~!-- o?4'S'1S!
2 L
./ r-
~ "" L"
r---
•
.e",_ "":.'"
.p6":~
b
" 'V.S//
'~1-S9 ot>"""'o;;-
~ "
'''..
I :s>~ .9....
~ 08 <to
~ 06 ~~
~ 04
0'
0
," , , ,
COLl..ECTOR
. ,
At.1PERES (I.el
.. , I
COLLECTOR-TO-EMITTER COLLECTOR-TO-EMITTER VOLTS (VeE)
I
Fig.8. Typical output characteristics lor types 2H5494 Fig.9 • Typical output characteristics for types 2N5494
Fig.7· Typical gain.bandwidth product for types 2N5490 through 2N5497 inclusive. anc12N5495.
through 2N5497 inclusive.
COLLECTOR-TO-EMITTER VOLTS 1'IIC£1·4
H
;; 400 1
~ 300
/I
~ f
~
~300
3 W
.
i: 200
IZI 100
J ~ 200
0.:1 I I!I 0.$ , l~

BASE-TO-EMITTER VOLTS (VBE) BASE-lO-EMITTER VOLTS {"eEl
92C5-14991
Fig.JO. Typical output charact.ristics for type. 2HS.f90 Fig.' r • Typical input characteristics for typu 2N5494 Fig.J 2 • Typical input characteristics for types 2H5490
through 2H5493 inclusive. through 2N5497 inclusive. through 2H5493 inclusive.
CCl..LECTOR-TO-EMITTER VOLTSIVCfl. 4
t • +~ .
•::; I=t; ~;:; 4
f:t ITS: Iffi

.
~ 2
o I
0.5 I 1.5 O.!I I I.!I

BASE-lO-EMITTER VOLTS (VSE) BASE-TO-EMITTER VOLTS lVeEI BASE-lO-EMITTER VOLTS {VSEI
Fig.13 - Typ;caltransferch~rocterjst;csfor types 2N5494 Flg.J5. Typical fransfer characteristics lor types
Fig.' 4 "I Typical transfer characteristics lor types 2N5490 2N5490 through 2H5497 inclusive.
through 2HS497 inc lusive.
through 2H5493 inclusive.
__________________________________________________________________ 153
POWERTRANSISTORS ________________ ~ ______________________________________
2N5629-2N5631
Features:
Silicon 'N-P-N .Epitaxial-Base • High dissipation capability
High-Power Transistors •
•
Low saturation voltages
Maximum safe-area-of-operation curves
• Hermetically sealed JEDEC TO-204MA
package
Rugged, Broadly Applicable Devices • High gain at high current
Applications:
The RCA-2N5629, 2N5630 and 2N5631 are verters, . inverters, and solenoid (hammer)/ • High-fidelity amplifiers
epitaxial-base silicon n-p-n transistors in- relay drivers. • Power-switching circuits
tended for a wide variety of high-power, These devices differ in maximum voltage • Solenoid drivers
high-current applications, such as power- ratings. They are supplied in JEDEC TO-
switching circuits, driver and output stages 204MA hermetic steel packages.
for series and shunt regulators, dC-lo-dc con-

2N5629 2N5630 2N5631
• VCEO ................... _ ....... . 100 120 140 v
• VCBO ......................... . 100 120 140 V
* VEBO ........... . 7 V
* ~ ........................ . 16 A
:~M::::::::::::::::::: ............... .
A
:* PT
20
5 A
JEDEC TO-204MA
(See dlmenllonal outline "A".)
AtTC ~250C ..................... . 200 w
At TC ::>
25°C .......... derate linear IV 1.14 wf'c
• T J , Tst9 ......................... . _ _ _ -65 to 200 °c
• TLat 1116 ± 1/32;n.(1.58 ± 0.8mml
_ _ _ _ 235
from case for 10 5 ••.••••.••.••..
• tn accordance with JEDEC registration data.
12~ 150 175 200

CASE T[IoIPEAATlIM: (TcI-·C
Fig. 2 - Current derating curve for all types.
~IWJ: COLLECTQR- TO-EMITTER VOLTAGE (VCE)- 2 v -
.--iz~-
4
0
~ 2
~
0:: 100
.....
::'
~ ~t~~i'U~E
~
z
~ 4 ~ st TE~'2.'!>.C
cr. ~"c'
2
i .•
0
~
;
10
eg
.. ..
2
I
2 4 2 4 •• 2 4 2 4 ..
0.01 0.1 I 10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V 92CM-3tQ29 COLLECTOR CURRENT {Ie )-A 92CS-30146
Fig. 3 - Tvpical de beta characteristics as a function

Fig. 1 -,Maximum operating areas for all types (TC = 25°C), of collector current for all types:
154 ___________________________________________________________________
2N5629-2N5631
ELECTRICAL CHARACTERISTICS, At Case Temperature TC = 25°C
TEST CONDITIONS LIMITS U
VOLTAGE CURRENT N
CHARAC· I
TERISTIC Vdc Adc 2N5629 2N5630 3N5631
T
VCE VBE IC IB Min. Max. Min. Max. Min. Max. S
100 -1.5 - - - 1 - - - -
'" ICEX 120 -1.5 - - - - - 1 - -
140 -1.5 - - - - - - - 1 mA
100 -1.5 - - - 5 - - - -
TC = 150°C 120 -1.5 - - - - - 5 - -
140 -1.5 - - - - - - - 5
50 - - 0 - 1 - - - -
'" ICEO 60 - - 0 - - - 1 - - mA Fig. 4 - Typical saturation voltage characteristics
70 - - 0 - - - - - 1 for all types.
ICBO
100a
120a
-
-
-
-
-
-
-- -
1 -
-
-
1
-
-
-
- rnA
IE = 0 -
140a - - - - - - - 1
'" lEBO - 7 0 - - 1 - 1 - 1 rnA
'" VCEO(sus)b - - 0.2c 0 100 - 120 - 140 - V

2 - BC - 25 100 20 BO 15 60
* hFE a
2 - 16c - 4 - 4 - 4 -
'" VBE a 2 - BC - - 1.5 - 1.5 - 1.5 V
* VBE(sat)a - - 10c 1 - l.B - l.B - 1.B V
I~
'" Cobo f=O.l MHz
loa - - - - 500 - 500 - 500 pF
IE = 0
- - 10c 1 - 1 - 1 - 1
'" VCE(sat)a
- - 16c 4 - 2 - 2 - 2
V
'"
'"
tr
hfe
f=0.5MHzl
f= 1 kHz
20
10
-
-
1
4
-
- 15
1 -
- 15
1 -
- 15
1 -
-
MHz
I!
ISlb
tp = 1 s nonrep. 30 - - - 6.67 - 6.67 - 6.67 - A
BASE-lO-EMITTER VOLTAGE (YBEl-V
ROJC 10 - 10 - - 0.B75 - 0.B75 - 0.B75 °CIW 92CS-30148

a Ves value.
b CAUTION: Sustaining voltage, VCEO(sus) MUST NOT BE measured on a curve tracer.
C Pulsed; pulse duration ~300 ,",5. Duty factor ~2%.
r
COLLECTOR SUPPLY VOLTAGE (Vee)a 30 v
I81-1.82"'1/10 Ie
CASE TEMPERATURE ITcl~ 25°C
4
Ii.,'
~ n.'
~ I',',
0.2 0.6 I~
BASE-TO- EMITTER VOLTAGE ("SE1- V 92.CS-30L49 2 COL~ECTOR 6 CURR:NT (I ~)-A 92CS-?o0151
Fig. 6 - Typical transfer characteristics for all types. Fig. 7 - Typical saturated-switching times
for all types.
________________________________________________________________________ 155
POWER TRANSISTORS
2N5632, 2N5633, 2N5634

The RCA-2N5632, 2N5633 and 2N5634 are These devices differ in maximum voltage • Hermetically sealed JEDEC TO-3/TO-
epitaxial-base silicon n-p-n transistors in- ratings. They are supplied in JEDEC TO- 204MA package
tended for a wide variety of high-power, 204MA hermetic steel packages. • High gain at high current
high-current applications, such as power-
switching circuits, driver and output stages
for series and shunt regulators, dc-to-dc con- Applications:
verters, inverters, and solenoid (hammer)/ • Series and shunt regulators
relay drivers_ • High-fidelity amplifiers
• Solenoid driv.ers
2N5632 2N5633 ~N5634 TERMINAL DESIGNATIONS
.. Vceo ................................ . 100 120 140 v C
'0
.. VCBO ................................ . 100
________120 140
7 ______ __ v
: VeBo ................................ . _________ 10 _________ V
A
: iF:::::::::::::::::::::::::::::::::::
.. PT
_ _ _ _ _ _ 15
________ 5 A
A
AtTC "';;2S OC ..............•....•.. 150

________ 0.857 ________
w U(S-2"'6
:>
At TC 2SoC .......... dorato linearly wfJc
* T";), Tstg .•....•........•...........•... _ _ _ -65 to 200 DC JEDEC TO-204MA
.. T L at1116 ± 1/32 in. 11.58 ±O.Bmm) (See dimenSional outline "Au.)
______ 235
from case for 10 s ....•...............
* In accordance with JEDEC registration data.
25 50 15 100 125 ~ 17'5 200

CASE TEMPERATUf'I[ (TC)-·C
Fig. 2 -. CUrrent derating curve for all types.
~-!
COLLECTOR': TO-EMITTER VOLTAGE (VCEJ-2 V -
c •
-?~=
0
~ 2
......
i~: ~P£.1\~:P.l"t
S ,~ c:~sE
4 ~E~
\ t
t'!l-C
,
~
··
~ 10
i ,
~
~,
0.01
2 ... ... 0.1
2
I 10
COLLECTOR CURRENTCIcJ-A
2 • II 2 • II
tZCS-30141
100
Fig. 3 - Typical dc beta characteristies as a function

COLLECTOR- TO-EMITTER VOLTAGE IVCE1-V 92CM-30502 of collector current for all types.
156---------------------------------------------------------------------
2N5632,2N5633,2N5634
ELECTRICAL CHARACTERISTICS, At Case Temperature TC a 25°C

2N5632 2N5633 2N5634 UNITS
TERISTIC Vdc Adc
100 -1.5 - - - 1.0 - - - -
* ICEX 120 -1.5 - - - - - 1.0 - -
140 -1.5 - - - - - - - 1.0
mA
100 -1.5 - - - 5.0 - - - -

TC'" 150°C 120 -1.5 - - - - - 5.0 - -
140 -1.5 - - - - - - - 5.0 Fig. 4 - Typical ssturation voltBge characteristics
for aI/typos.
50 - - 0 - 1.0 - - - -
* ICEO 60 - - 0 - - .- 1.0 - - mA
70 - - 0 - - - - - 1.0
ICBO IE = 0 100 - - - - 1.0 - - - -
Vce=Rated Vce 120 - - - - - - 1.0 - - mA
140 - - - - - - - - 1.0
* lEBO - 7 - - - 1.0 - 1.0 - 1.0 mA
VCEO(sus)b - - 0.2 0 100 - 120 - 140 - V
2 b :lb lUU :lU -SO 15 60
hFE8
* 2 - 10 - 5 - 5 - 5 -
* VeE 8 2 - 5 - - 1.5 - 1.5 - 1.5 V
- 7.5 0.75 1.0 1.0 l~O
• VCE(sat)8
10 2.0 2.0 - 2.0 - 2.0
V
* fT f=0.5MHz 20 - 1 - 1 - 1 - 1 - MHz
• hfe f = 1 kHz 10 - 2.0 - 15 - 15 - 15 -
* veE (sat) 7.5 0.75 - 2.0 - 2.0 - 2.0 V
* Cabo f = 0.1 MHz

lOC - JOO - 300 - 300 pF
IE =0
I Sib 50 3.0 - - - - -
tp = 1 5 nonrep. 45 - - 3.33 - - - A
."s",-rO-EMITTER VOLTAGE {Ya[l-Y .
,aCS-50148
40 - - - - 3.75 - Fig. 5 - Typical input characteristics for aI/ type•.

ROJC - - - - - 1.17 - 1.17 - 1.17 OCIW
* In accordance wIth JEDEC regIstratIon data.
8 Pulsed; pulse duration 0;;;;; 300"... Duty factor 0;;;;; 2%.
b CAUTION: Sustaining voltage, VCEO(sus) MUST NOT BE maosurad on a curve tracer.
IASE-TO- EMITTER VOLTAGE' YBEI-V
Fig. 7 - Typica/ssturated-switching tim..

Fig. 6 - Typical transfer characteri.tic. for aI/ type•.
for aI/ typos.
_____________________________________________________________________ 157
2N5671, 2N5672
- - ----- --.-
Silicon N-P-N Power Transistors Features:
• Maximum Safe.Area.of.Operation Curves •••
'Sib limit lin. beginning ot 24 V
• Fast Turn..On Time ••• t on = O.5J,1s max. at IC= 15A
High-Current, High-Speed, High-Power Types for Switching and
• Hig... Cur ....nt Capability ....
. Amplifier Applications
hFE' VeE(.ot), YBE( •• t), & VBE m••• ured.t le= 15A
e Low VeE( •• t) = O.75Y m•• ,
RCA Types 2N5671 and 2N5672 A Bre epitaxial silicon MAXIMUM RA TINGS, Absolute-Mo.lmum V.lu .. : eHigh P T = 140Wm••.• tT e = 25°C
n-p-n transistors having high current and high power
handling capability and fast switching speed. The .COLLECTOR-TO-BASE 2N5671 2N5672
VOLTAGE. VCBO • • • • • • • • • • • • • • •• 120 150 V . C
2NS672 is similar to the 2N5671 except that it bas high-
er voltage ratings and lower leakage currents. These COLLECTOR-TQ-EMITTER SUSTAINING E (FLANGE)
devices are especially suitable for switching-control VOLTAGE:
amplifiers, power gates, switching regulators, power-
switching circuits, converters, inverters, control circuits.
:!!~ ~::;~:~B~[~~~~ ~B'i~t~c'e' 90 100 V
(RSE ) ~50.n. VCER(Bus) •••••••• 110 140 V

Other recommended applications included DC-RF amp- With external.base-tc>emitter resistance
. lifiers and power oscillators. n
(RSE) 'i! 50 & VSE ::: -1.5. VCEX(8US) 120 150 V
V B
They are supplied in the JEDEC 'fO.3 hermetic steel "'EMITTER-To-SASE VOLTAGE,VEBO ••• 7
package. "'COLLECTOR CURRENT. IC ......... 30 30 A
JEDECTO-3
'" BASE CURRENT, IS' ••..•...•....• 10 10 A (See dimensional outline "A",)
.f.Fonnerly Dev. Types TA7323 and TA7323A, respectively "'TRANSISTOR DISSIPATION, P T :
At case temperat1D'es up to 25° C
and VeE up to 24 V ... -......... 140 140 W
At case temperatures up to 25° C
and VCE above 24 v. • • • • • • • • • • •• See Fig. 1.
At case temperatures above 25° C
and VCE above 24 V • • • • • • • • • • • •• See Fig8.I&2.
"'TEMPERATURE RANGE:
Storage & Operating (Junction) •••••• -65 to +200 °c
"'PIN TEMPERATURE (During Soldering)
At distances at 1132 in. from aeating
plane for 10 a max •••••••••••••• 230 Qe.
-In accordance with JEDEC registration data format (JS.6, RFD-U

25JGJS .. I25UDIJ51D
EffEcnv£ CASE Tm'. ON CASE TEll'. ClEF' OR Tc~ac WSJOllI
Fig_ 2 - Dissipation derating curves fo~
types 2N5671 and 2N5672.
100
8 CASE TEMPERATURE (TC)'25 ,CJI
O
IFOR TC ABOVE 25°,OERATE INEARLY)

...
tOLLECTOR-TO-£fIIIT":.ER VOLTS CVcE:'-:S
•
4 ~...
it ,~:~o - ""
Ii81 ~
lCMAX. (CONTINUOUS)
~2
30
'l~ " ", ~q, ~'?. I

~ '"
I~~~~.~'
2
';it~
~~ /.:\. '\ ' \
~ 0
~'" .V" .\
'9'Jrt:
-
. .. . . . .
10
111. , V
.If 8
'<~\ \
::l
a: • ~~\ 1\
QOI I 4 --I
COUECTOR AMP£RES CIt.
4._ -10
'""- 4
'"'"
\~\ \
Fig. 3 - Typical de beta 'characteristics
0: for types 2N5671 and 2N5672.
0
I-
2
~\
v
'"
.J
.J
0
v
I
8
l\ 1\
.\
\
• 'l\
• ~VCEO MAX.·120 V
1\ (2N5672)
0·1
VCjO MAX.' 90 V
(2N5671l - -
6 8 100
• 8 10
• • 8 1000
COLLECTOR-TO-EMITTER VOLTS (VCE) 92C;5-156;0 Fig. 4 - Typical transfer characteristics
Fig_ 1 - Maximum operating areas for types 2N5671 and 2N5672. for types 2N5671 and 2N5672.
158------__________________________________________________________
2N5671, 2N5672
ELECTRICAL CHARACTERISTICS. C••• Temp.r.t.r. (T C) = 25°C Un/us Otherwise Spod!ieJ
DC DC
Type Type
SYMBOL Voltage Current UNITS
2N5671 2N5672
(V) (A)
VCB VCE VBE IC IB Min. Max. Min. Max.
ICEO - 80 - - 0 - 10 - 10 rnA
· ICEV - 110 -1.5 -
-
- -
-
12
- - - - rnA
· ICEV -
135
100
-1.5
-1.5 - -
-
- 15 -
10
10
rnA
rnA
(T C=15O° C)
· lEBO - - -7 0 - - 10 - 10 rnA types 2N5671 and 2N5672.
VCEO(SUS) - - - 0.2 0 90 a - 120 a - V

VCER(SUS) - - - 0.2 0 110 a - 140 a - V
(RBE) ~50n
VCEX(SUS) - - -1.5 0.2 - 120 a - 150 a - V
& RBE ~ son
· VBE(sat) - - - 15 1.2 - 1.5 - 1.5 V
VBE - 5 - 15 - - 1.6 - 1.6 V
· VCE(sat) -
-
-
2
-
-
15 1.2
15 -
-
20
0.75 - 0.75 V
· hFE - 5 - 20 - 20
100
-
20
20
100
-
Fig. 6· Typical output characteristics
for types 2N5671 and 2N5672.
IS/bb - 24 - - - 5.8c - 5.8c - A

- 45 - - - O.ge - 0.9C - A CASE TEMPERATURE ITC I. 2' ·c
ES/bd - - -4 15 - 20 - 20 - rnJ
RBE = 20.0,
L = 180J,LH
fT - 10 - 2 - 50 - 50 - MHZ
Cob 10 - - - - - 900 - 900 pF

(At 1 MHz,IE=O)
IBl=
· ton
VCC=
30 V
- - 15 IB2= - 0.5 - 0.5 J.LS
10 Z . " "00 I • • 11K
EXTERNAL BASE-TO-EMITTE~ RESISTANCE tRBEI-:sS.3809
Fig. 7· Callectar·ta-emitter sustaining

Z 4. 10"
1.2 valtl1ge characteristics for types

2N5671 and 2N5672.
IBl=
· ts
VCC=
30 v.
- - 15
IBz-
- 1.5 - 1.5 J.LS
i~.~~~T,~~,~~P;'~: YOLTSlytel '!
1.2 '.4
VCC' 'Bl=
· tf
30 V
- - 15 I
Bz=
- 0.5 - 0.5 J.LS
- 1.2
ROJC' - 10 - 5 - - 1.25 - 1.25 oclW
,
ilPulHd; pulse duration ~ 350 loIS, dUly filctor~O.02.
bcAUTION The sustaining \/011a~S VCEOIsusl and VCExlsuSI MUST NOT be ",enured on a CUrlle uacer.
I:tS/b is defmed as the current 81 which second brNkdown occurs ill a specified collecto' volla~ lII(,th Ihe emltter·bilse Junction 2 S 1 , '10
lorwsrd-biased lor !ranSInor operation .n Ihe active reg,on. COLLEeTO~ AMPERES (lei
dpulsed; '·s,non·repel'li"llpulse.
Fig. 8· Typical saturated switching
'ESfb IS defined as thelnergy ill whICh second breakdown occurs under specified rewrse-bincond'hons. ESlb'"1I2L1 2
characteristics for types
whlfe l is II series !gad 01' IlllkalJll Inductilnce and I "the peak collector curren!.
·In accordanCi With JEDEC [lIIII"ltlOn data tormal JS·6 RDF·1. 2N5671 and 2N5672.
_____________________________________________________________________·159
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _....,,-_ _ _ __
2N5781-2N5786
Silicon N-P-N and P-N-P Epitaxial-Base Features:
• Low saturation voltagas
Complementary-Symmetry Transistors • Maximum safe-area-of-operation curves

• Hermetically sealed package ,
Gen'lral-Purpose Types for Switching and Linear-Amplifier Applications • Hi~ gain at hi~ current
• High breakdown voltages
RCA-2N5781. 2N5782. and 2N5783 are epitaxial-base silicon These transistors are intended for medium-power switching and
p-n-p transistors - - complements of the hometaxial-base silicon complementary-symmetry audio amplifier applications.
n-p-n types 2N5784, 2N5785. and 2N5786,· respectively. TERMINAL DESIGNATIONS
,f3"..,
The three types in each family differ primarily in voltage ratings • Formerly RCA Oev. Types TA7270. TA7271, TA7272. TA7289,
and saturation characteristics. TA7290, and TA7291 respectively.
P·N-P 2N6781· 2N5182+ 2N5783+

MAXIMUM RATINGS, Absolure-.Max;mum Values:
N.p·N 2N5184 2N5786 2N57..
·COlLECTOR-TO-6ASE VOLTAGE. _...... _.............. VC80 80 ·65 45 V
92cs-Z7512
COllECTOR-TO-EMITTER SUSTAINING VOLTAGE:
• With external base-to-emitter
resistance (R BE' .. 100 n . VCERlsusl 80 65 45 V
JEDEC TO-39
With base open .... , .. , .. VCEO(sus) 65 60 ·40 V
·EMITTER·TO·BASE VOLTAGE. V EBO 5 5 3.6 V (See dimensional outline "C".)
·CONTINUOUS COLLECTOR CURRENT, .. ,.,', .•..•.. 3.5 3.5 3.6 A
'c
·CONTINUOUS BASE CURRENT ..•.•..•..
-TRANSISTOR DISSIPATION: '.
PT
,.
A
At case temperatures up to 2SoC .......•..•..•..•......•

At ambient temperatures up to 2SoC , ........•.....• ,
'0 10 W
W N . I ...
VOlTACOI! APPLIES ONLY TO THE DISSIPATION·
At case temperatures above 2SoC .. , ......•• Derate linearly 0,057 W/'C. or see Fig. 1 LIMIT!!) I'OAnOtf AND 1S1~·UIIITI!O I'ORTION
OF MUlllUlI.QPERATlNG·AIIU QJIVes ("Ie$. I
At ambient temperatures above 2SoC ......... Derate linearly 0.0057 wtc I. 2). DO WOT DERATe THE SPEa!'II!D VALuE!
1"011 Ie 110\1. ICONTINUOUS).
-TEMPERATURE RANGE:
Storage and operating (Junctionl •.•.••.•..•••.•. - - - - 6 6 to +200 - - - ·c
-LEAD.. TEMPERATURE {During solderingl:
At distance;;;' 1/32 in. 10.8 mml from seating pane
for lOs max. . .......•.•....•.•..•..•.• - - - - 230 - - - - ·C
·'n accordance with JEDEC registration data forrnat'JS·6 ROF-2. • For p..n-p devices, voltage and current values ara nevati.....
EFI"ECl'IVE CASE TeMPERATURE OR edt: nllPEIUTUItE IT!!:"F) OR (Tcl ~~.III?
Fig. 1 - Dissipation derating curve for all types.

~' COLLECTQft·TO-EIiITTER VOLTAGE (VCEI" _2'1 I ',COLLECTOR.TO-EIIITTER VOLTAGE ('ICE) • lV
, CASE TEIII'EIfATURE {TcJ _»oC , CASE TEMPERATURE ITel - IS"C
, '_100 , 1-1000 , '100

, ''''
COLLECTOR OJRRENT (Ie) _ .. A COLLECTOR CURRENT IIcl-.,A
Fig. 2 - Typical gain-bandwidth product for Fig. 3 - Typical gain-bandwidth product for Fig. 4 - Typical transfer characteristics for
2N5781, 2N5782, & 2N5783. 2N5784, 2N5785, & 2N5786. types 2N5781, 2N5782, 2N5783.
CASE TEIIPERA TURE CT

e) • 25"C CUI! Tf,IIPER.t.TURE (TC)' noc
'a," .182- D.IIC '1I,"·IS 2 "IU Ie
BASE-ro-bITTEJI 'IOLTAGEIYae:I-V COLLECTOR CURRENT I'd-A COLLECTOR CUILREloIT Ucl- A

Jm.llll
Fig. 5· Typical transfer characteristics for Fig. 6 - Typical saturated switching characteristics Fig. 7 - Typical saturated switching characteristics
types 2N5784, 2N5785,2N5786. for types 2N5781, 2N5782, 2N5783. for types 2N5784, 2N5785, & 2N5786.
160 _____________________________________________________________________
2N5781-2N5786
ELECTRICAL CHARACTERISTICS, At c... Temperatutfl ITcI- 25' C unl_ orherwi.. rpecifled
TEST CONDITIONst LIMITS
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N&781 2N&784 UNITS
Vdo Ado p-n.p n-p-n
VCE V8E IC B Min. Max. Min. Max.
Collector Cutoff Current:
With externll ....to-emitter 65 - -10 - 10 /JA
rnistlnco CRBEl- 100 n ICER
At T C - 16O"C 65 - -1 - 1 mA
• With ....-emItter junction rev.....
bilsod Ind extarnol beso·to-emitter -15 1.5 - -10 - - /JA
rosistln.e CReEl- 100 n 15 -1.5 - - - 10
• AtTC-I50oC
ICEX -15 1.5 - -1 - - mA
15 -1.5 - - - 1
• With bI.. open ICEO 50 0 - -100 - 100 /JA
Emitter Cutoff Curront lEBO -5 0 - -10 - 10 /JA
• DC For_d·Current Transfer 2 1· 20 100 20 100
Rllio hFE 2 3.2' 4 - 4 -
• Colioctor.to·Emittor Sustlinlng
Voltlgo CIII Figs. 2 and 31: VCEOCsusl 0.1 0 -65b - 6sb - V
With beso open
With externol ....·to-emitter
rosistln" CReEl- 100 n VCERCsusl 0.1 -ed> - ed> -
• BaII·to·Emitter Voltage VeE
'.
2 1· - -1.5 - 1.5 V
• CollectQr·to·Emitt~r Saturation
Voltoge CmllSUrod 0.25 in VCEC ..tl 1· 0.1 - -0.5 - 0.5 V
C8.35 mml from __ Ie
• Mlgnltudl Of Common·Emltter,
SmolioSignol, Short-circuit,
Forward-<:urront Trlnsfer Rlliod Ihf.1
f-4MHz -2 -0.1 2 15 - -
I - 200kHz 2 0.1 5 20
• Common·Emitter, SmIIl·Slgnll,
Short-Circuit, Forwlrd-Current hf. 2 0.1 25 - 25 -
Tr.nsfor Rllio CI - 1 kHzl
Saturated.Switching Time CVCC =
30 V,lel = le21:
Turn-on tON -1 -b.l - 0.5 - -
Ctd+trl 1 0.1 - - - 5
/.I'
Turn..,ff -1 -0.1 - 2.5 - -
Cts+tfl tOFF 1 0.1 - - - 15
Thermal Resistance:
Junction-to-case 'ROJC 11.5 - 11.5 ·CIW
Junction-to-ambient ROJA - 115 - 115
IUW: COLLECfClR.TO-EMITTER V'DLTAGE IVc~. _ 2V

'~: ~~"'i,"'OL"GE"CE)'"
IODO:COLLECTOR.TO-fIITTE R¥DlTAGEIVCElo-lV
~ ., t-~ . i ...
f
j::---=.::~oO(j
.. -- .....,
.ISO-C
;;
- ....
·.rl- i
I
~ ::::.:::
~1(IO • 1-_ .• is."C -" ~ IDO,
--
.... C4SEn;:MI"I!RA1\JRfI TC -_6.5
~ ~A5ETE.PER,nJiiEfTc)·-6s-c a.
,
)0·650(;
~ E ' - i '"..
~
1'...'-
· ..tcf 1
~
a," ~ "'1~
. .I ,,
~
~
· ,, - i
_ 0.01 J • I I.. 0.1 J ~
COLLfCTOITCURREIIT(ICl_A
I 1_ 1.0 2 ' I 1_ 10
mI-4Jf1
, .. 0.1 ~ I
COL.LECTOft CURRENT Uc!-A

1 f.O • I.
II1lWl1D
10 -0.01 . 6 '_0.1 ,
COLLECTORCURRENTUC1-A
. , I_I , ....,,.,,,
Fig. 8 . Typical dc·beta characteristics for Fig. 9 . Typical dc·beta characteristics for Fig. 10· Typical dc·beta characteristics for
type 2N5781. type 2N5784. type 2N5782.
________________________________________________________________________________ ___ 161

~
-
-
-
-
-
-
-
-
-
-
POWER TRANSISTORS
2N5781-2N5786
ELECTRICAL CHARACTERISTICS. At c..e T.mpsnture (TcI- 25"C unl... oth.rwi$IJ specified
TEST CONDITIONS. LIMITS

CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N5782 2N5785 UNITS
Vde Ade p-n.p n-p-n
With external base-to-emitter 50 - -10 - 10 /lA
resistance (RBe) = 100 n ICER
AtTC=I50·C· 50 - -1 - 1 mA
With base-emitter junction reverse-

biased and external base-to-emitter -60 1.5 - -10 - - /lA
resistance (ReE) = 100 n 60 -1.5 - - - 10
ICEX
• AtTC·I50·C
-60 1.5 - -1 - - mA
60 -1.5 - - - 1
• With base open ICEO 35 0 - -100 - 100 /lA

Emitter Cutoff Current lEBO -5 0 - -10 - 10 /lA
DC forward-Current Transfer 2 1.2" 20 100 20 100
hFE
Ratio 2 3.2" 4 - 4 -
Collector-la-Eminer Sustaining
Voltage (see Figs. 2 and 3): VCEO(sUS 0.1· 0 _50b - sob -
With base open V
resistance (RBE) = 100 n VCER(su. 0.1· _65b - 65 b -
Base-la-Emitter Voltage VSE 2 1.2" - -1.5 - 1.5 V
Collector.to-Emitter Saturation
Voltage (measured 0.25 in VCE(sat) 1.2" 0.12 - -0.75 - 0.75 V
(6.35 mm) Irom casel e 3.2" 0.8 - -2 - 2
Small-Signal, Short-Circuit,
Forward-Current Transfer Ratiad Ihlel
1= 4 MHz -2 -0.1 2 15 - -
1= 200 kHz 2 0.1 - - 5 20
Common-Emitter, Small·Signal,
Short-Circuit. Forward-Current hie 2 0.1 25 - 25 -
Transler Ratio (I = 1 kHz)
Saturated Switching Time (VCC =
30 V.ISI = IS2):
Turn-on tON -1 -0.1 - 0.5 - -
(td+tr) 1 0.1 - - - 5
/lS
Turn-off -1 -0.1 - 2.5 - -
(t, +tl) tOFF 1 0.1 - - - 15
Thermal Resistance:
Junction-to~18
R8JC 17.5 - 17.5
·CIW
Junction-to-ambient R8JA - 175 - 175
• In accordance with JEDEC regIStration data lormat JS·6 RDF·2. • For p-n-p devices, voltage and current values are negative.
• Pulsed. pulse duration"" 300 p.s, duty factor = 1.8%. C Lead resistance is critical in this test.
bCAUTION: Susrsiningvolrsges VCEO(sUS}, MId VCER'sus) d Measured at a frequency where Ihfel is decreasing
MUST NOT be mlNllured on II CUIYB USCtil'. at approximately 6 dB per octave.
1000, COllECTOrHO'E.ITTElivOlTAGE(VCEf~ _2v ",~~.:r-ro~"~'=Cro='~.T~~'~"~TT~"~'=''~T'~"~I'~c,~I~.,~,-r-'---r'-r1
I 'COllECTOIHO.ElllfTlERVOlUGE(VCE).2V
. . r- c----
:ti::;;tJjj--lf--++-t-I~I---H--H
I
10.1 • 111.0 ~ 6 I fa
_0.01 2 ( ' '_0.1 2 ~. '- U 2 "'-10
COllECTORCURRENTUC)_A
COllECTOIiCURIiENTUC)-A COlLECTORCUIiRENT(lC)-1r.
~IS"11'
Fig. 11 - Typical dc-beta characteristics Fig. 12· Typical dc-beta characteristics Fig. 13 - Typical dc·beta characteristics for
for type 2N5783. for type 2N5786. type 2N5785.
162 __________________________________________________________________
2N5781-2N5786
ELECTRICAL CHARACTERISTICS. At Case Temperature. (TCl = 25"C unless otherwise specified
CHARACTERISTIC SYMSOL VOLTAGE CURRENT 2N5783 2N5786 UNITS
Vdc Adc p-n-p n-p-n
VCE VSE IC IS Min. Max. Min. Max.
With external base-to-emitter 40 - -10 - 10 Il A
resistance (RSEI = 100 n
ICER
At TC = 150°C 40. - -1 - 1 mA
• With base-emitter junction reverse-

biased and external base-to-emitter -45 1.5 - -10 - - IlA
ICEX
45 -1.5 - - - 10
-45 1.5 - -1 - - mA
* ACT C = 150°C
45 -1.5 - - - 1
* With base open ICEO 25 0 - -100 - 100 IlA
• - -
.. Emitter Cutoff Current
DC Forward-Current Transfer
Ratio
lEBO
hFE
2
-3.5 0
1.6a 20
-10
100 20
10
100
IlA
2 3.~ 4 - 4 -
• Collector-to-Emitter Sustaining
Voltage (see Figs. 2 and 31: VCEO(susl O.la 0 -40b - 40b -
With base open V
VCER(susl O.la -45b - 45b -
• Base-to-E""itter Voltage VSE 2 1.63 - -1.5 - 1.5 V
* Collector-to-Emitter
Saturation Voltage (measured VCE(satl 1.63 0.16 - -1 - 1 V
0.25 in (6.35 mml from casel c 3.~ 0.8 - -2 - 2
* Magnitude of Common-Emitter.
Small-Signal. Short-Circuit.
Forward-Current Transfer Ratio d Ihfel
f = 4 MHz -2 -0.1 2 15 - -
f = 200 kHz 2 0.1 - - 5 20
• Common-Emitter. Small-Signal.
Sho~-Circuit. Forward-Current hfe 2 0.1 25 - 25 -
Transfer Ratio (f = 1 kHzl
Saturated Switching Time (VCC =
30 V. IBl = IS21:
Turn-on tON -1 -0.1 - 0.5 - -
ltd + trl 1 0.1 - - - 5 Ils
Turn-off
tOFF
-1 -0.1 - 2.5 - -
Its + tfl 1 0.1 - - - 15
Thermal Resistance:
Junction-to-case R6JC 17.5 - 17.5 °CIW
Junction-to-ambient R6JA "- 175 - 175
* In accordance with JEDEC registration data format JS-6 RDF-2. • For p-n-p devices. voltage and current values are negative.
a Pulsed. pulse duration =300 IlS. duty factor =1.8%. c Lead resistance is critical in this test.
b CAUTION: Sustaining voltages VCEO(susl. and VCER(sus) d Measured at a frequency where Ihfe I is decreasing at
MUST NOT be measured on /I curve tracer. approximately 6 dS per octave.
____________________________________________________________________ 163
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _-,-_ _ _ _ _ _ _ _ _ _ _ _ _ __
2N5781·2N5786
COlLECTOR-TO-EMITTER VOLTAGE (vCEr-v

92CS-23943
Fig. 14 - Maximum operating areas for types 2N5781, 2N5782, and 2N5783.
82CS-25944
Fig. 15 - Maximum operating areas for types 2N5784, 2N5785, and 2N5786.
1M __________ ~ ________________________________________________ ~
2N5838-2N5840
High-Voltage, High-Power Silicon N-P-N Features:

• Maximum lafe-area-of-operatlan curves
Power Transistor • Low uturatlon voltages
• High valtage ratings

VeER('.') = 375 V (2H584D)
For Switching and Linear Applications in Military. Industrial and Commercial Equipment 300 V (2H5839)
275 V (2H5838)
RCA 2N5838. 2N5839and. 2N584U·* are epitaxial silicon are especiaUy suitable for use in inverters, deflection
n-p-n power transistors utilizing a multiple-emitter-site circuits, switching regulators, high-voltage bridge ampli- • High dissipation rating
structure. These de ...·ices employ the popular JEOEC fiers, ignition circuits, and other high-voltage switching PT=lDDW
TO-3 package; they differ mainly in voltage, current- applications.
gain, and VCE(sat) ratings.
•• Formerly RCA De .... typell TA7513. TA7530, and TA7420
Featuring high breakdown voltage ratings and low-satu- respectively. c
'~
ration voltage values, the 2NS838. 2N5839 and 2NS840
MAXIMUM RATINGS. Ab.olute-Ahu:/mum Valu . .:
*COLLECTOR-ro-SASE
2N5838 2"5839 2N5"'0 ..,.,
*TRANSlSTOR DISSIPATION.
275 300 375 v At ca.e temperature up to 250 C

VOLTAGE. VCBO •..•...•
and VCE up to 40 V •...• 100 100 100 w
COLLECTOR-T<?EMlTrER SUS- At ca.e temperaturesupto2S o C
TAINING VOLTAGE: and VCE above 40 V . • . • • See Fig. 5
v At ca.e temperatutes above 25 C 0
* :~~~ !:::rso~~i~B~)~~) 250 275 350

and VCE above 40 V . . . . • See Fi~s. I & 5 JEOEC TO-3
-1.5 V. VCEV(SUB) • . . . . . 275 300 375 V *TEMPERATURE RANGE:
With external haae·to-emitter Stefa&!': 85 Operatin&(junction) ·65 to +200 °c (So. dlmonolonal oulline "A".)
resistance (RBE) .:S. SO n. 300 375 V
*PIN TEMPERATURE (During
VCER(SUS) . • . . • . . • . • . 275 Solderin&):
At distances ~ 1/32 in. ftrtOTE: CURRENT DERATING AT CONSTANT •••
*EIIlTTER-TO-BASE VOLTAGE APPLIES ONLY TO THE DISSIPATlON- ~ j ...
VOLTAGE. VEBO . . . . . . . . V ~: ~~ ~r~ .c~~e. f.o~ ~~ ~. 230 °c
LIMITED PORTION AND THE 1 S/b 'lIMITED
PORTION OF MAXIMUM OPERATING AREA
"::'
*COLLECTOR CURRENT. Ie CURVES 00 NOT DERATE THE SPECifiED VALUE
Continuous ........... . A FOR Ie MAX
Peat . . . . . . . . . . . . . . . . A
"CONTINUOUS SASE CURRENT.
tS·················· . 1.5 1.5 1.5 A
Fig. 2 - Derating curves for al/ types.

I.c MAX.IPULSEDl '.5 COLLECTOR·TO·EMITTER VOLTAGE tVeEI':5 V
IC MAX. ICONTINUOUSl
DISSIPATIDN- L
«
I
t-
Z " • '0.1 " •• I " .. '10
'"0:0: COLLECTOR CURRENT tIc I-A
=>
U Fig. 3 - Typical normalized dc beta
0:
characteristics for all rvpes.
~
~
..J
..J
o
'-'0.1
0.01
10 6 8100
COLLECTOR-TO -EMlnER VOLTAGE IVCEl-V
92CS-15905
Fig. 4 - Typical saturation voltage
Fig. 1 - Maximum operating areas for all"types. characteristics for al/ types.
_____________________________________________________________________ 165
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N5838-2N5840
ELECTRICAL CHARACTERISTICS, Case Temperature (T C) =25°C

CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N5838 2N5839 2N5840 UNITS

Vde A de
Colleclor-Cuto" CUllenl: 200 2 mA
With base open ICED 250 2 2
Wilh base·emiller juncllon 265 ·1.5 5
ICEV 290 ·1.5 2 mA
reverse biased 360 ·1.5 2
Wilh base-emiller junclion ICEV 265 .1.5 8
290 1.5 5 mA
reverse biased, TC=1 OOOC TC 100 DC 360 ·1.5 5
Emiller·Culo" CUllenl lEBO -6 I I I mA
Colleclor·lo·E miller ,
Suslalning Vollage VCEO(SUS P 0.2a 250b mb J5ab
Wilh base open
V
Wilh base·emiller juncllon. VCEX(SUS P .1.5 O.la mb JOOb mb
reverse biased
Wilh exlernal base-Io-emiller 0.2 a mb 30ab mb
reslslance (R BE ) - 50.2 VCER'SUS P
, . Emiller-Io-Base Voltage VEBO 6 6
\
6 V
Ie =0.02 A
5 0.5 a 20 20 20
DC FOfward,Cullenl 3 2a 10 50 10 50
Transfer Ratio hFE
2 3a 8 40
Base·lo-Emiller VBE,sall 2a 0.2 2 2 V
Salurallon Voltage 3a 0.375 2
Colleclor·lo·Emiller 2a 02 1.5 1.5
Saluralion Voltage VCE'Sal) 3- 0375 I V
Oulpul Capac ilance : Cobo 15.0 150 150 pF
VCB = 10 V, f = 1 MHz
Magn'ilude 01 Common·
Emiller. Small,Slgnal. Shorl·
Cllcull. Forward ,Culle'nl Ihie I 10 0.2 5 5 5
Transfer Ratio (f . I MHz)
Forward-Bias,
Second·Breakdovvn 40 2.5 2.5 25 A
Collectc.r Current: ISfo
t = 1 s, nonrepetitivp.
Second Breakdowrf Energy
(Wilh base reverse biased) Esfo· 4 0.45 0.45 0.45 mJ
RB = 50 n. L =100 ...H
Thellllt·Resistance ~ 10 5 1.75 1.75 1.75 °CIW
(Junclion-to·Case) R9JC
* In accordance with JEDEC registration data format (JS-6 RDF-l) II CAUTION: The sustaining voltages VCEO(SUS), VCEX(SUS) and
a Pulsed; pulse duration = 350 }Ls, Duty 'factol ~'2'&. . VcER(SUS), MUST NOT be measured on a curve tlacer.
166 _______________________________________________________________
2N5838-2N5840
SWITCHING-TIME CHARACTERISTICS, At Case Temperature (TC) = 2!f1C
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N5838 2N5839 2N5840 UNITS

V de A de
VCC IC IB- Max_ Typ. Max. Typ. Max. Typ.
Switching Times:
Delay Id 2 0.2 0.07 - 0.07
200 3 0.375 0.06
• Rise 2 0.2 1.5 0.6 \.15 0.6
Ir
200 3 0.315 1.5 0.8
Il S
Storage 2 0.2 3.75 \.15 3.0 \.15
Is
200 J 0.375 3.0 1.0
Fall 2 0.2 1.5 0.35 1.5 0.35
If 200 3 0.375 1.5 0.4
I< In accordance with JEDEC registration data format (JS-6 RDF-l). • IBI =IB2 =value shown.
o.~ I 1.5
BASE-TO-EMITTER VOLTAGE {"BEl-V "I
Fig. .5 - Typical transfer characteristics ~
for all types. ...
...a:z
a:
:>
o
, 4 10 2 4 . . 100 4
COLL.ECTOR-TO-EMITTER vOLTAGE llIcEl-V 12$$'''OJ1II11
COLLECTOR-TO-EMITTER VOLTAGE l'ofal-V
Fig_ 6 - Typical output characteristics 92CS-15906
for all types. Fig. 7 - Maximum operating areas for all types_
_________________________________________________________________________ 167
POWERTRANSISTORS ________________________________________________ ~ ____
2N5838-2N5840
I~·C
CASE TEMPERATURE ITC ,.
=~~Ir.g:.AT~~TlS.~·HI
;~ COLLECTOR SU'I'LY VOLTS IY CC ' • 10
.>~I CA'E TEMPERAtURE ITc" IS·C

Iltnl:: ,1~~:'~2NSl401
-
DC InA
nUl' vcr"'·... • 1,"-l lz
~
1100. i
~ I I I a
p~
;:
VCEII: 1....1
I w
~l!..
~
Yeu lMI C o.S
~~. I I
i"'"'!l.
10 II" 4 • "00 .. . . . "IC . . . 'lOll: , >

COU.ECTOR CURRENT 1Ic:I-A COLLECTOR (UUE"' Il,',-&
IXTUNAL 1A11~TO·I!'.ITTEIII .lSIIT."~EI ••EI-.a ""-"'0" tlS,-4010"
Fig. 8 - Collector-to-emittfJr sustaining Fig. 9·- Typical delay-tima chBracteri.tic Fig. 10 - Typical rise-time chBracteristic
voltage chBrecteri.tic. for all for all types.
for all type•.
typtlS.
~~I~I~.,..T~i~I:S.'~·H.
COLLEeTO" ,yPPLY VOLTSIYee " :I
ASE T'MPE"A'URE eTc I • 2S·C
• 0 II InA 111,,1 : I~ It::=~ 21158401
i 1,"-I·Z
~ 0.4
w
a
j: O.
:l
: 0.2
0.1
COLLICTOR CUMEN'IICI-.. COLLECTOR CURRENT IIC'-"

1"1-40""
Fig. 11 - Typical storage-time characteristic Fig. 12- Typical fall-tima characteristic

for all types. forsll type,..
1U ______________________________________________ ~---------------------
2N5871, 2N5872, 2N5873, 2N5874

Rugged Devices, Broadly Applicable Features:
The RCA-2N5871 and 2N5872 are epitaxial- devices have a dissipation capability of 115 • Maximum safe-areas-of-operation curves
base silicon p-n-p transistors featuring high watts at case temperature up to 25 D C. • Hermetically sealed JEDEC TO-31
gain at high current. The RCA-2N5873 and TO-204MA package
They differ in voltage ratings and in the
2N5874 are epitaxial-base silicon n-p-n tran- • High gain at high current
currents at which the parameters are con-
sistors. They may be used as complements to • Thermal·cycling rating curve
trolled. All are supplied in the steel JEDEC
2N5871 and 2N5872, respectively. These
TO-204MA hermetic package.
Applications:
MAXIMUM RATINGS, Absolute-Maximum Values: • High-fidelity amplifiers
2N5871" 2N5872" • Power·switching circuits
2N5873 2N5874 • Solenoid drivers
* V CEO ' 60 80 V
* vcso' 60 80 V
* v ESO · V
• IC' A
• ICM 15 15 A
* IS' 2 2 A
* PT
At TC <25°C . . . 115 115 W
At T C >
25°C derate linearly. 0.658 wtc
• TL
At distance 1/16 in. (1.58 mml from case for 10 5 ---250 - - - °c
• T J • T stg . - - -65 to 200 - - °c JEDEC TO·204MA
* In accordance with JEDEC registration data. (See dimensional outline "A".)
,
. ..
T .25·C
10
,
......... .........
0,
-, 100
··
I
.'-,
"'
'-, 0.,- f--
'i--!o~~ f--
~ 0~1
~
z
w
·,
!:!
TJ -200·C
",\°K\ f-- z
0
~
.- -~
\ '\'<,
"
"..~
~
- -~ ". ."
~\ ." 'r----r---- ."g 1\ \ 1\
~
~ 0..
0
~
\
~
I
r--
8 ··
8 C1URIIEj APPLY BELOW RiTED "CEO
..\
~ \ ';,
~./ t--
. ..";~~~,I~*. ..Y"'. , .~
..0" ,
2"'5871.2N5873
,, ,
. 10
2N5t72,2N'5874
, . H .1\,
100
10
I
,
10 lot
NUN8ER Of THERMALCTCLES liN THOUSANOSl
10 3
CO~LEeTOR 4 CUR;EN~ (IICI_A 2

COLL.ECTOR EMITTER VOLTAGE (VCE1-V.zCS_J0210
1
18 0.1 9ZC:- 30:11
Fig. 1 - Maximum operating areas for all types. Fig. 2 - Thermal-cycling rating chart.
2N5871 and 2N5872.
vCE·411- 2 TJ - 25-C
TJ ·25-C
~~ _TJ·,J~o·c
0 , -r--- I .• 1.8
~ 2;.e ....... r-.. .1
~
·· 'f' L
~ 100
......"-
t--. 1.2 1.2
~
~ ./ ~
~
i, · 1
-55"C
--...
~
~
~
OB VsE ,0
l 1\"'; le/IS-IO V-
V
I 0 .• -----VeE l,o\\ -.,1 Ie lie _\0
~~
J
.......... r-- viE" I
V £_4 V
/ VIBE", Vi E- 4 \I
1 /
·e ·
0 1
~
~
0.' 0.'
~I
I.Ile·~
I. ,/
-V!E ,..,I.! Ie !'B-t1-- V
g
7. 0.1
, 4 ..
COLLECTOR CURRENT (J:C)-A
I
, .
9;!.CS-30212
.1
0
18 0 • 1
VBE (,at1 AT Ie
2
• ••
COLLECTOR CURRENT {I C )-A
I-'"'
, .
UCS-10213
.1
0
1.
0.1
, • • I
.
COLLECTOR CURRENT I I C I-A
2 4 .7
Fig. 4 - Typical dc beta characteristics for Fig. 5 - Typical voltage characteristics for Fig. 6 - Typical voltage characteristics for
2N5873 and 2N5874. 2N5871 and 2N5872. 2N5873 and 2N5874.
________________________________________________________________________ 169
POWERTRANSISTORS ____________________________________ ~ ____________________
2N5871, 2N5872, 2N5873, 2N5874

, TJ ·2S"C
TC = 25°C Unless Otherwise Specified I

,
vcc':30V
'ells"IO =t=
··, -----V -
""- j:7
CHARACTERISTIC
VOLTAGE CURRENT
V dc A dc
2N5871·
2N5873
2N587~
2N5874 UNIT "- ~ --
VCE VBE IC IB MIN. MAX. MIN. MAX. "'- r-.., td AT VSE loftl- 5 II
- -
0.1
,
*
--.
ICEX 60 1.5 - 0.25 - - , '!..
f1'o...- -
80 1.5 - - - - - 0.25 mA
·, r-
.,,
_ _ 2N581t,2f.l587Z (PNPI
TC=150°C 60 1.5 - - - 2 - - _ _ _ 2N5873. 2~8741NPNI
80 1.5 - - - - - 2 , , ,,
" D.'
COLLECTOR
,
CURRENT 11: c l-A
* ICEO 30 - - 0 - 0.5 - - mA Fig. 7 - Typical turn-on-time for all types.
40 - - 0 - - - 0.5
* ICBO 60 c - - - - 0.25 - -
mA
IE = a 80C - - - - - - 0.25
* lEBO - -5 0 - - 1 - 1 mA
* VCEO(sus)b - - 0.1 0 60 - 80 - V
I TJ -25-C i-
* hFE a 4 - 0.5 - 35 - 35 - VCC' 3011
,
- - I 'e/ls"'O
4 - 2.5 - 20 100 20 100 'S'" 'S2 r--
4 - 7.0 - 4 - 4 - ,I,
- ,
I
.,.."
* VBE a 4 2.5 - - 1.5 - 1.5 V
I ., I:--...
* VBE(sat)a - - 7 1.75 - 2.5 - 2.5 V ~ I "
t--....
-- '-~ r::-...'"
w
"
* VCE(sat)a - - 4 0.4 - 1 - 1
V
2
;:
, "'"- r-...
"
- - 7 1.75 - 2 - 2
I
* fr
f = 1 MHz
10 - 0.25 - 4 - 4 - MHz
0.1
.," - _ _ 2N5871, 2N5872 (PNPI
, . ..
2N5873,2N~874 (NPNI
\ , . ,,
* hfe 4 - 0.5 - 20 - 20 - 0.1
COLLECTOR CURR~NT (:I.c I-A 92CS- 30216
f = 1.0 kHz
Fig. 8 - Typical turn-off-time for all types.
* Cob 2N5871-72 10c - - - - 300 - 300
pF
f = 1 MHz 2N5873-74 250 - 250
* - tr - - 2.5 0.25 d - 0.7 - 0.7 f.lS
* ts VCC=30V - - 2.5 0.25d - 1 - 1 f.ls

- - 2.5 0.25d - -
* tf - 0.8 0.8 f.lS
ROJC - - - - - 1.52 - 1.52 °C/W
• For p-n-p devices, vortage and current values are negative.

a Pulsed; pulse width :<300 J,LS, duty factor-~2%.
b CAUTION: Sustaining voltage, VCEO(sus), MUST NOT be measured on a curve tracer.
C V eB d IBI = -I B2
170 ______________________________________________________________ ~ _____

_______________________________________________________ POWERTRANSISTORS
2N5875. 2N5876, 2N5877, 2N5878

Rugged Devices, Broadly Applicable Features:
The RCA·2N5875 and 2N5876 are epitaxial· They differ in voltage ratings and in • Maximum safe-areas-of·operation curves '
base silicon p·n·p transistors featuring high currents at which the parameters are con- • Hermetically sealed JEDEC TO·3(TO·204MA
package
gain at high current. The RCA·2N5877 and trolled. All are supplied in the steel
2N5878 are epitaxial·base silicon n·p·n tran· JEDEC TO·204MA hermetic package. • High gain at high current
sistors. They may be used as complements to • Thermal-cycling rating curve
2N5875 and 2N5876, respectively. These Applications:
devices have a compability of 150 watts at
case temperatures up to 25°C. • Series and shunt regulators
• High·fidelity amplifiers
• Power·switching circuits
MAXIMUM RATINGS,Absolute Values:
2NS87S· 2NS876·
2NS877 2NS878
• v CEO · 60 80 v
• V CBO ' 60 80 V
• V EBO ' 5 5 V
• IC' 10 10 A
• ICM 20 20 A
• lB' 4 4 A
• PT
At TC ";25°C 150 150 w
At TC>25D C derate linearly - - 0.857 wtc JEDEC TO·204MA
• T J • T stg . . . - -65 to 200 - - °c (See dlmenllona. outline "A".)
• TL
At 1116 in. (1.58 mm) from case for uj s ---250--- DC
-In accordance with JEDEC registration data.

• For p-n-p devices, voltage & current values are negative.
...
,.
1
;'
.100
. ,"'
\
0
~ ~,
~
~
l!
i15 lCO•
II;
•
- -.::.~~ ""
-
~I~I
~·Cr-.·''''''c
yc!·•.d.
I:: 'I-- I-- ~

I- I-~
~~
~
il
I!
~
. ~ ~
a i \\ ~"..o~-.; _ _ I!
a ~~
~
'I-- 1;-'"
\
~" ! 2
~- '\~
"'10 Z 4
COLLECTOR EMITTER VOLTAGE (Ytt»-Y
"100
Met-lOIM
10
I
, , .. ... . .. .
~~\~ , \(~ ~
n
10
n ;
0.
102
NUMBER OF THU"" CYCLES UN THOUSANDSI
,
'\. ~
u
Q 10
0.1
, • .. I
,
COLLECTOR C'J('R!NT (I.e I-A
. •
ueS-5OIft
•
1\
10
Fig. 1 - Callsctor-Bmitter valtags IV ceo V Fig. 2 - Thermal-cycling rating chart.

Fig. 3 - Typical dc beta characteristics far
2N5875 and 2N5876.
_____________________________________________________________________ 171
POWER TRANSISTORS
2N5875, 2N5876, 2N5877, 2N5878

1000
ELECTRICAL CHARACTERISTICS, at ease Temperature TC = 26°C •
~
0
Unl... Otherwise Specified
·
VCE-.'O V
I, 1
TEST CONDITIONS LIMITS §
~ 2
--::f80
"'0
~
r
""'-
VOLTAGE CURRENl 2NS87S- 2N587ae r-
CHARACTERISTIC Vdc Adc 2N5877 2NS878 UNITS ~,OO .............. "'-
i ·•
-55·C
VCE VaE 'C la MIN MAX. MIN. MAX.
-...... "' \.
• 'CEX 60 1.5 - - - 0.5 - -
~
· .........
r--..~
80 1.5 - - - - - 0.5 mA ·1 2
TC= 150°C 60
80
1.5
1.5
-
-
-
-
-
- -
5 -
-
-
5
!! 10
~ • · ·· I • . · •" . ~
•
COLLECTOR CURRENT II C )-A IIItcs-SO•••
'CEO 30 - - 0 - 1 - - mA
40 - - 0 - - - 1 2N5877 and 2N5878.
• 'CBO 60C - - - - 0.5 - - mA

'E = 0 80C - - - - - - 0.5
• 'EBO - -5 - - - 1 - 1 mA
TJ -Z5·C
'E=O /
I.'
• VCEO(sus)b - - 0.2 0 60 - 80 - V V
~ VSE(aadAT Ic/'a- IO
/
• hFE a 4 - 1 - 35 - 35 - ~ I.Z
VeE AT VCE- 4.0 V \
/
4 - 4 - 20 100 20 100 0
c IJ ...-'
- -
* VBEa
4
4 -
10
4
-
-
4
- 1.5
- 4
- 1.5 V
~ 0.8
0.'
- I-
* VBE(sat)a - - 10 2.5 - 2.5 - 2.5 V ,/
• VCE(satja -
-
-
-
5
10
0.5
2.5
-
-
1
3
-
-
1
3
V
0
~I
r--VCElsat}AT
•
IC/.J:~
·· • I
COLLECTOR CURRENT (I C I-A
r-
2 .•"
nCS·501.7
• fr 10 - 0.5 - 4 - 4 - MHz Fig. 5 - Typical voltages for2N5875and2N5876.

f = 1 MHz
• hfe 4 - 1 - 20 - 20 -
f = 1 kHz TJ -Z5-<:
• Cob VCB=10V 1.2
2N5875·76 - - - - - 500 - 500 pF

1.0
f = 1 MHz 2N5877-78 - - - - - 300 - 300 w ,/
• r--
tr - - 4 0.4d - 0.7 - 0.7 IlS ~<>8 t=v;~tlAT Ic'Ia-\O / ' .,/
~
• ts VCC=30V
- - 4 0.4d - 1.0 - 1.0 Ils ~ 0.1 ~VeEATVCE···~V
\,/
!l
'-- 0.'
• tf - - 4 0.4 d - 0.8 - 0.8 /lS
0., /'
ROJC - - - - - 1.17 - 1.17 °C/W :---V~E boHle/laelO

a Pulsed; pulse width ';;;300 Ils,duty cycle';;;2%.
eV CB
• For p-n-p devices, voltages and current values are negative.
b CAUTION: Sustaining voltage, VCEO(susl. MUST NOT
be measured on a curve tracer. Fig.
0.1
· ·•• I
6 - Typical voltages for 2N5877 and 2N5878.

• ·
IlCS·SOI . .
10
d IBI = -I B2
·· I
"-
Ycc· 30V _
lella- IO _
i>"
10.
·•r- -
o
. vcc.so v C-
IC 118 ·10
r-
. ·~
181· ... 82
1' ... TJ -25-C
C-
--
TJ -25-C
...:::.." ::-:.. ... ~/'
. r---
-
I,
......
• 2
" I
,
I
-..!
·
=0.1
...2 ='· ....."
...2
·· .........
....
··
tel AT VSE 10m- 5.0V
;: ;: 1:.,......
~-
-- ~~ ~ .'~~
0·01
2
_ _ ZN!S875,2NS81'6 IPNP)
--i
2 ..
2N • 81,. 2Ni8i 'jPNI
• I 2 . . 0
· . .. • .
0.1
0.1
2N5ITS,2N!5876 (PNPI
___ 2N"71'I'N~78 ~ N~NI
2
I
0
• 10
<>1 10
COLLECTOR CURRENT exc )-A 92CS-30199 COLLECTOR CUfHlENT (I.e I-A I2CS-10200
Fig. 7 - Typical turn-an-time for aI/ types.

172 _____________________________________________________________________
Fig. 8 - Typical turn-off·time for a" types.
2N5879, 2N5880, 2N5881, 2N5882

Silicon N-P-N and P-N-P Epitaxial-Base Feature!;:
High-Power Transistors • Maximum safe-area-of-operation curves
• Hermetically sealed JEDEC TO-31
TO-204MA package
Rugged Devices, Broadly Applicable
• High gain at high current
For Industrial and Commercial Use • Thermal-cycling rating curve
The RCA-2N5879 and 2N5880 are epitaxial- They differ in voltage ratings and in the
base silicon p-n-p transistors featuring high currents at which the parameters are con- Applications:
gain at high current_ The RCA-2N5881 and trolled_ All are supplied in the steel • Series and shunt regulators
2N5882 are epitaxial-base silicon n-p-n tran-
JEDEC TO-204MA hermetic package_ • High-fidelity amplifiers
sistors_ They may be used as complements to
2N5879 and 2N5880. respectively_ These
devices have a dissipation capability of 160
watts at case temperatures up to 25 0 C_

2N5879· 2N5880·
2N5881 2N5882
: v CEO ..................•...•.... 60 60 V
V CBO -_ .... _.. __ .......... _ .... . 60 60 V
• VEBO ..... - ... - ........•........ 5 5 V
: IC . _ ........ _.. _.... _........... . 15 15 A TERMINAL DESIGNATIONS
ICM .•. -- .. - ..•........... "'-'" 30 30 A
: IB . _ ... - _... _... _ ............... . 5 5 A
PT
At TC ";;250 C _ ............... . 160 160 w
At T C >
25°C .. _.. _ derate linearly 0.915----- WJOC
• T J. Tstg •......... - ....... - ... - .. . ------ -65 to 200 °c
• TL
At 1/16 in. !l.58 mm) from
case for 10 s -----250 ------ °c
JEDEC TO-204MA
(See dlmenllon.' oulllne "."-)
• For p--n-p devices, voltage and current values are negative.
..
'00 veE· 4 V-t---
1
!t
. '-
o.
'{ .. ...
z
0
,L.... I--~ \ '~
\
~ I - ~~,;
~"
~.~
.
~
Q
1\ 1\ ~
; \ o~
~
'f-- f-- .' '--
~ -;,~
2. 4 I I I ' 10 2: e 8 1)0
COLLECTOR [MITTER VOL rAGE t VCEI-V 92.CS-30202
'0
1
, . ,I~*... , .U-'0' ,
W ~
o
eo
~
10
u:.
0
0.
NUNSER Of THERMALCYCl,..ES liN THOUSAHDSl

102
.0
o~
L-~~L,~--+.--~.~.~,--~,~--~.--~.~.-~r---"
9tCS-t9!1TOfll
COLLECTOR CURRENT (I )-A
92C$-50204
Fig. 1 - Maximum operating areas for all tYPBS. Fig. 2 - Thermal"Cycling rating chart. Fig_ 3 - Typical dcbeta characteristics
for 2N5879 and 2N5880.
______________________________________________________ ~--------173
POWERTRANSISTORS ______________________________________________________
2N5879, 2N5880, 2N5881, 2N5882
. ·.
ELECTRICAL CHARACTERISTICS. At Case Tempereture '-~. VCE-4 v r---
T C • 25°C Unless 'Otherwise Specified ;
I I
I TEST CONDITIONS LIMITS i t - - t£;'.~
VOLTAGE CURRENT 2N5879- 2N5880-
UNITS
E
~
,
CHARACTERISTIC -........
..le
.
Vdc Adc 2N5881 2N5882
VCE VeE IC Ie Min. Max. Min. Max. ~'OO :-.....
~
5·
....... "-
60 1.5 - - - 0.5 - - ..... :--
'r--- t--J..e
• ICE X
TC= 150°C
80
60
1.5
1.5
-
-
-
-
-
-
-
5
-
-
0.5
-
mA
•
~
~ 1 -- I'- I'~
. 1.. . . • •
2
80 1.5 - - - - - 5 g 1'["-."
30 - - 0 - 1 - - mA
10
2
, 10, 2
• ICEO 40 - - 0 - - - 1 COLLECTOR CURRENT (1 C I-A UCI-SOiO'
• ICBO 60c - - - - 0.5 - - mA Fig. 4 - Typical de beta characteristics

IE =0 80C - - - - - - 0.5 for 2N5881 and 2N5882.
• lEBO - -5 0 - - 1 - ' 1 mA
• VCEO(sus)b - - 0.2 0 60 - 80 - V
4 - 2 35 35
• hFE a 4 - 6 - 20 100 20 100
4 - 15 - 4 - 4 -
• VBE a 4 - 6 - - 1.5 - 1.5 ·v
• VBE(sat)a - - 15 3.75 - 2.5 - 2.5 V
TJ ·25~C
7 0.7 1 I ~I
• VCE(sat)a V
- - 15 3.75 - 4 - 4 ,.I lh i
• fT. f = 1 MHz 10 - 1 - 4 - 4 - MHz i
• hfe. f - 1 kHz 4 - 2 20 20
~
::: ". tv
V I
• Cob. f = 1 MHz ~
d"'l'C/~ p-
w
2N5879·80 10c - - - - 600 - 600
pF ~na r--"ef.'.O .4"
2N5881·82 ,10 C - - - - 400 - 400 VaE ",'ICE
.~ - - 6 0.6d - 0.7 - 0.7 J.i.S " r---1

0,'
- - 6 0.6d - 1 - 1 L)t) L
. .. . ..
• ts VCC=30V J.i.S lelia-tO
f-"- Iv« ~
• tf I - - 6 0.6d - 0.8 - 0.8 J.i.S 0
, , ,
RIiJC - - - ~
- 1.1 - 1.1 °CIW ,
COLLECTOR CURRENT (IC)-A
'0
*In accordance with JEDEC registration data. Fig. 5 - Typical voltage characteristics
-For p--n-p devices, voltage and current values are negative. for 2N5879 and 2N5880.
<!Pulsed; pulse duration ";;,300 ,,5.
duty factor = 2%.
bCAUTION: Sustaining voltage. VCEO(sus). MUST NOT be measured on a curve tracer.
'0, •
··--
Ycc:- 3OV TJ - 2 5 · C _ TJ ·2~·C
, Ie lie -10
~~;I:.~-
·:::.....
TJ - 2 5 - C -
'B'-'82 - 1.6- -
r-
~
-:::: '.
./
I=,
2
"
...... ,
i "'-r- 1-2
i ,"-
~~
- I--~ ...
w
• ·
J-... r-!' ......
.......
w
~ r--
> 0,8 "eEl,otl "r Ic/leslO bd
(/
···
~O.I
;:
;;::-
t"AT VBE(off)-S Y _
>=
:-....;::::" r-- " '--V'f >T itEiY /
f-o: !'-~
'~.I -~ f-P< 0.' l..l 1--- , /
. .. ,
2
. ., , .'N:
. , I'- .•• . .., . ..
_ _ 2N5879. 2N5880 IPNPI _ _ 2H5879,2N5880(PNP) L
VCE {.oIIAl Ic1l8~ I-"
,, _ _ _ 2N5881, ZN58821NPNJ 0.' ,
_ _ _ 2H5881, 2N5882 (MPHI
, 0
, ,
'. 2 2 2 2
COllECTOR CURRENT II I-A COLLECTOR CURRENT C1C)-A
'0 '0
Ilea-sozo. COLLECTOR CURRENT IlCI-A
9ZCS-50206
Fig. 6 - Typical turn-on time for all type•. Fig. 7 - Typical turn-off time for all types. Fig. 8 - Typicsl voltage characteristics
for 2N5881 and 2N5882.
174 ________________________________ ~ ______________________________________

--------------------------------________________________ POWERTRANSISTORS
2N5885, 2N5886
High-Current, High-Power, High-Speed N-P-N Features:
• Specification for hFE and VCE(sati up to 25 A
Power Transistors • Current gain bandwidth product
fT =4 MHz (min.) at 1 A
The RCA·2N5885 and 2N5886 are epitaxial· regulators, dc·to·dc converters, inverters, and
base silicon n·p·n transistors intended for a solenoid (hammer)/relay drivers. • High dissipation capability
wide variety of high·power, high·current • gO mJ ESib characteristic
These devices differ in maximum voltage
applications, such as power·switching circuits, ratings. They are supplied in JEDEC TO·
driver and output stages for series and shunt 204MA hermetic steel packages.
MAXIMUM RATINGS, Absolute·Maximum Values: TERMINAL DESIGNATIONS

2N5885 2N5886
*V CBO . 60 80 V
*VCEolsusl 60 BO V
*V EBO 5 V
*IC . 25 A
*ICM 50 A
*IB . 7.5 A
IBM 15 A JEDEC TO·204MA
·PT
(See dlmenllonal oulllne "A".)
At TC .;; 25°C 200 W
At TC > 25°C Derate linearlv 1.15 wf'c
See Figs. 1 and 2
- - - -65 to 200 - - - - °c
At distance;;' 1/32 in. lOB mml from

seating plane for 10 s max. 230 °c
* In accordance with JEDEC registration data format JS-6 RDF·1.
CASE TEMPERATURE (Tc)--C
Fig. 2 - Derating curves for 2N5885 and 2N5886.
: COLLECTOR-TO-EMITTER VOLTAGE (VeE)·" V -
l • - ""'t,~
.·
~)I
0
~ I-'" ~ &~~r~
15'00
~ -:s:s-c- 0,_
~ '-'0-
~
I--- ......
4 " c-
e
.·•
§ ,.
"0
~
2
1--&
~
COLLECTOR- TO-EMITTER VDLTAGEIVCEI-V
92CS-29846
~
&,· ... ... . . ••
0., 2
I
2
COLLECTOR CURRENT
10
(X,c I-A
100
Fig. 3 - Typical dc beta characteristics .. a func·

tion of collector current for 2N5885 and
2N5886.
------------------------------------------------------____________ 175
POWERTRANSISTORS ________________________~--------------------------------
2N5885, 2N5886
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) ~2SOC
CHARAC, VOLTAGE CURRENT
2N5885 2N5886 UNITS
TERISTIC Vdc Adc
6Qa - 1 - -
rCBO aoa - - - 1
60 -1.5 - 1 - -
ICEX 80 -1.5 - - - 1
mA
60 -1.5 - 10 - - o
'CEX COLLECTOR-YO-EMITTER SATURATION VOLTAGE [veEI,aU]-Y
TC= 1500 C 80 -1.5 - - - 10 92CS-29'49
30 - 2 - - Fig. 4 - Typical saturation voltage characteristics for

'CEO 40 - - - 2 2N5BB5 and 2N5BB6.
'EBO -5 - 1 - 1
4 3b 35 - 35 -
hFE 4 lOb 20 100 20 100
4 25 b 4 - 4 -
VCEO(sus) 0.2 60 - 80 -
VBE 4 10 - 1.5 - 1.5
VBE(sat) 25 b 6.25 - 2.5 - 2.5
V
VCE(sat)
15b 1.5 - 1 - 1
25 b 6.25 - 4 - 4
'Sib
tp = 1 s 20 10 - 10 - A
nonrep. 92CS-2984Y

ES/b 2N5BB5 and 2N5BB6.
L = 125/lH, -1.5 10 6.25 - 6.25 -
RBE = 51 n 8 COLLECTOR SUPPLY VOlTAGE IVccI-30V
mJ I(t:r8"10
L- 20 mH, .,
·
8 CASE TEMPERATURE {Tel' 2S"C
RBE = 100 n
0 3 90 - 90 - "7
"'e ,i - I,
Ihfe I 10 1 4 - 4 - I
F
f = 1 MHz ~
··, ---
Ii! 0.1
hfe 4 3 20 - 20· - 3
f = 1 kHz
Cobo lOa - 500 - 500 pF
3-
~
F
" -
f·= 1 MHz li
10 1 - 0.7 - 0.7 ~
tr
VCC= 0.01
ts 10 lc - 1 - 1 /lS 6810 6 8 100
30
tf 10 lc - 0.8 - 0.8 COLLECTOR CURRENT (leI-A 9lCS_29802
Fig. 6 - Typical delay-time and ris~time

ROJC 20 5 - 0.875 - 0.875 °C/W
characteristics as a function of
*In accordance with JEOEC registration data format JS-6 RDF-1. collector current for 2N5BB5
and2N5BB6.
aVeB'
b pulsed; pulse duration = 300 1'8, duty factor = 1.8%. I 8 COL.LECTOR SUPPLY \IOLTAGE (VccI.:SOV
:IBl a - IB2
CIS1 = -I B2 · t 8 Ic/la- 1O
1 .. CASE TEMPERATURE ITCI-2S-C
f ,
~ t--. N!. I
.
3
~ .-'
.E "
!Ii
"""~
F
~
0.1
&810 6 8 100
COLLECTOR CURRENT IIcl-A !nC5-29803
Fig. 7 - Typical storage-time and fall-time

characteristics as a function of
collector current for 2N5BB5
176 _____________________________________________________________________ and2N5BB6.
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829, 40831

Silicon N-P-N and P-N-P Medium-Power Transistors
Features:
General-Purpose Types for Switching Applications • 2N5954-2N5956 complements to 2N6372·2N6374
• 2N6465, 2N6466 complements to 2N6467, 2N646B
RCA·2N5954, ·2N5955, and ·2N5956 are Types 2N5954 and 2NS956 are available • Low saturation voltages
multiple·epitaxial p·n·p transistors. RCA· with factory-attached heat radiators as RCA • Maximum-safe-area-of-operation curves
2N6372, ·2N6373, and ·2N6374 . are multi·
ple-epitaxial n·pon transistors. They are com· types 40829 and 40831. respectively. The • Thermal·cyc(e ratings
plements to 2N5954, 2N5955, and 2N5956. other devices may be obtained with heat • HermeticallY'sealed JEDEC TO·66 package
The RCA·2N6465 and 2N6466 are multiple· radiators on special order. Radiatorversions
are intended for printed-circuit-board appli- TERMINAL DESIGNATIONS
epitaxial n·p·n transistors. They are cample· C
cations. and differ electrically from their
'~
ments to the 2N6467, and 2N6468, multiple·
epitaxial p·n·p transistors. These devices basic counterparts only in device dissipa-
differ in voltage ratings and in the currents tion (S.B W up to 2S" C ambient) and thermal
at which the parameters are controlled. resistance (30" CIW max. at T A=2S" C).
All are supplied in the JEDEC TO·66 package.

JEDEC TO-66
2NS954-2NS9S6 2N637'-2N6374, 2NS'It'i5-2N6468
MAXIMUM RATINGS, Absolute·Maximum Values: (See dimensional ouiline UN".)
N.p·N 2N6374 2N6373 2N6372 2N6465 2N6466
P·N.p 2N5956·
40831·
2N5954· 2N6467.
40829·
2N646S· b
~CBO .............................. . 50 70 90 110 130 V e
~CEX(susl
'V BE = -1.5 V. RBE = 10lHl 50 70 90 110 130 V
VCE'lI~,;;I= 100 n .................... . 45 65 B5 105 125 V c
t
VCEO(susl. .......................... . 40 60 80 100 120 V ! HEAT RAOIATORI
~EBO .............................. . 5 5 5 V JEDEC To-66 with He.t Raidator

6 6 6 A 40829.40831
·IC·································· .
·I B·································· . 2 2 2 A (See dimensional oulllne "0".)
"'T At Tc up to 25°C ................. 40 40 40 40 40 W
(2N63741 (2N63731 (2N63721
(2N59561 (2N59551 (2N59541
At T A up to 25°C ................. 5.8 5.8 W
(401131) (408291
At TC above 25°C ................. - - - - Derate I i nearly to 200 0 C - -____
Tstg ............................. -65 to +200 - _ _ _ _ _ _ __ °c
At distances;;;' 1/32 in. (OB mm) from

seating plane for 105 max. .......... +235 _ _ _ _ _ _ _ _ __ °c
*JEDEC types in accordance with JEDEC registration data format JS·6-RDF·2.
·For p-n-p devices, voltage and current values are negative.
CASE OR AMSIENT TEMPERATURE! TC OR TA1-·C

92CS-27699R2
Fig. 1 . Dissipation derating chart for a/l types.
CASE TEMP£RATURE ITel· 25"C
.
COLLECTOR-TO-fMITTfR VOlTAGE 'Vet). 4'0'
.'
·,oo+---t---r-+-~---+---+-+-++---1 I
~ :r-~---+~-+~--~--~-+~r--4 I "0
~
~ 820
i 4r--4---+~~~--4---4--+~~-4
= :::--~:r,~1
is f ................ ~£..4r:
I~'·~.c
2 .... 2 .... 2 0.' ,
104 105 10' SASE-TO- EMITTER VOLTAGE 'VSE1-V COLLECTOR -TO-EMITTER VOLTAGE IVCEI - V
HUMBER Of TH£RIIAL CYCLES
Fig. 2· Thermal·cvcling rating chart for Fig. 3· Tvpical input characteristics for Fig. 4 - Tvpical output characteristics (Dr
al/ tv!?es. 2N5954·56. 2N6372·74, 2N5954·56, 2N6372·74,
40829. and 40831. • 40829 and 40831.·
+For p-n-p devices, voltage and current values are negative _
________________________________________________________________________ 177
POWERTRANSISTORS _______________________________________________________
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829, 40831

ELECTRICAL CHARACTERISTICS. At Case Temperature
.-., (TC) = 2fjOc unless otherwise spscifitld
TeST CONDITIONit LIMITS u
2N6374 2N6373 2N6372 N
IvOLTAGE FURREN
CHARACTERISTIC 2N595f 2N5955· 2N6954·
V~ Adc
40831 4OSa+ "T
VeE V8E IC 18 Min. Max. Min. MlIx. Min. Max. S
· 'CER
RBE=l00n
35
55
75
-
-
-
100
-
-
-
-
-
- -
100-
- -
-
100
pA
I
i
· 'CEX
RBE=100n
45 -1.5
65 -1.5
85 -1.5
-
-
-
100
-
-
-
-
-
-
100
- -
-
-
-
-
100
tJA 0.'
BASE-TO-EMITTER VOLTAGE IV8£I- V
I..
· RBE=100n,
TC=1500C
45 -1.5
65 -1.5
85 -1.5
-
-
-
2
--
-
-
-'
- -
2 -
- -
-
-
2
mA
2N5954-56. 2N6372-74 and
40829 and 40831 ••
- - - -
· 'CEO
25
45
65
-
-
1
-
-
-
-
1 -
- -
'-
-
1
mA
· 'EBO
4
-5
3a
-
20
0.1
100
-
- -
0.1 -
-
0.1
--
mA
· hFE
4
4
4
2.5a
2a
sa
-
-
5
-
-
-
20
- -
5
100
-
-
20
5
100
-
· VCEO(sus) O.la 40 b - SOb - SOb -
VCER(sus)
- -
RBE=100n
VCEX(sus)
RBE=l00n
O.la
-1.5 O.la
45 b
50b -
65 b
70b -
85b
90b
-
-
V
-0.01 -0.1
.. ...
-I
COI..LECTOA CURRENT IIcl-A
-10
· VBE
All types 4 3a - 2 - - - -
2N6467 and 2N6468.
All types 4 2.5 a - - - 2 - - V
AI,types 4 2a - - - - - 2
2N6372-2N6374 4 6a - 3 - 3 - 3
- - - - -
· VCE(sat)
3a
2.5 a
2a
0.3
0.25
0.2
-
-
1
-
-
-
-
1 -
- -
-
1
V
2N5954-2N5956 6 1.2 - 2 - 2 2
Ihfel
f=1 MHz
2N6372-2N6374 4 1 4 - 4 - 4 -
2N5954-56, 4.0829, 31 -4 -1 5 5 i§
hfe
f=l kHz 4 0.5 25 - 25 - 25 - -0,01 -10
ROJC
2N5954-56,
2N6372-74
- 4.3 - 4.3 - 4.3 Fig. 7 - Typical de beta cha!acte~istics for
2N5954-2N5956, 40829 and 40831.
ROJA
°CIW
40829,40831 - !'lo - 30 30 COL..&.!CTOR-TO-EMITTER VOLTAGE IYe£'- o.
In accord~nce with JEDEC registration data format JS-6 RDF-2 tor JEDEC (2N5954- 1 000
~5956. 2N6372-2N6374, 2N6465-2N6468, 40829: 40831) 1ype..

• For p-n-p devices. voltage and current values are negative.
.
too CAJE TEllrUE (TC'!I2S'"C
i=roo T;;:c ....
a Pulsed, pulse duration = 300 1", duty factor = 1.8%.
e: .0 -40·C
b CAUTION: Sustaining voltages VCEO(susJ. VCER(susJ. and V CEX(susJ MUST NOT be measured
:~
on a curve tracer.
! ~
....... ,-,\~
i• 20
~
g 10
0.01
. . .. . ... . . ..
0.1
COLLECTOR CURRENT Ucl-A
10

·For p.niJ devices. voltagB and current values are negative. 2N6372-2N6374.
178 _______________________________________________________________________
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829, 40831

ELECTRICAL CHARACTERISTICS. At Case Temperature fTC! = 25°C
unless otherwise specified
VOLTAGE CURRENT 2N6465 2N6466
CHARACTERISTIC UNITS
Vdc Adc 2N6467+ 2N646s+
VCE VeE IC Ie Min. Max. Min. Max.
ICER 95 - 100 - - p.A

ReE=100n 100 - - - 100
* ICEX
RBE=loon
100 -1.5
120 -1.5
-
-
100
-
-
-
-
100
p.A
0.01
... 0.1
COLLECTOR CURRENT' ICI-A
I
RBE = lOOn, 100 -1.5 - 2 - - rnA Fig. 9. Typical dc beta characteristics for
TC=150°C 120 -1.5 - - - 2
2N6465 and 2N6466.
50 - 1 - -
* ICED 60 - - - 1
rnA
COLLECTOR-TO-EIIIITTER VOLTAGE ('ICE'.""
* lEBO -5 - 0.1 - 0.1 rnA j; %0 CASE TEMPERATURE (T,'-25"' -

4 1.!ia 15 150 15 150 I "
* hFE ~ ~r-+--+~+t~~~~+--+--~rH
4 4a 5 - 5 - g 1"r-+-1-++l--+-1-++l--~r--+-H
* VCEO(sus) O.la 100b - 120b - ~ 12r-~--:I....r-!9==P-I-.d:+I--+-1-++I
~ ~ /'
VCER(sus)
RBE = 100 n O.la 105b - 125b - V
~ '~~-+--~-H--+--r~+--P~rti1
* VCEX(sus) ~ 'r-~~~-H--~r-~-Hr-~~~"
RBE=loon -1.5 O.la 110b - 130b -
* VBE
4
4
1.53
4a
-
- 3.5
2 -
- 3.5
2
V
. .. ~I 1
COLLECTOR CURRENT 11cl-A
All types 1.5a 0.15 - 1.2 - 1.2 Fig. 10· Typical gain·bandwidth product for
VCE(sat) 2N6465-2N6466 4a 0.8 3* - 3* V 2N5954·56, 2N6372·74, 2N6467·68,
2N6467-2N6468 -4a -0.8 - -4* - -4* 40829, and 40831. (For p-n-p devices
voltage and current values are,
* Ihfel
negative.)
f = 1 MHz 4 1 5 - 5 -
COLLECTOR-fO-EMITTER VOLTAGE (VCE'-"¥
* hfe
f = 1 kHz
ROJC
4 0.5 25
-
-
4.3
25
-
-
4.3 °C/W ·~ E Zi50
f
~ ~ ~
v
~
20.
* In accordance with JEDEC registration data a Pulsed, pulse duration = 300/Js, duty factor = 1.8% ~
~
5
format JS·6 RDF·2.
• For p-n-p devices, voltage and current values
b CAUTION: Sustaining voltages VCEO'sus), VCER'sus),
and V CEX(sus} MUST NOT be measured on a curve tracer.
•
B
w
150
I
are negative. : 100
'0
0.5 I 1.5
BASE-TO- EMITTER VOLTAGE (VaEI-V
Fig. 11 . Typical input characteristics for

2N6465 and 2N6466.
CQLLECTOft-TO-[NITTEA VOLTAGE IVal--4V
. ~
~
I
~-z~
~-zo
i. \
·E.
i ~ "r-~r-~--~~--~--~~~r--4 40W
a-I ~
~ 4r-r-~r---~~--~--~~~Pr~
i~ :,
•
COLLECTOR-TO-EMLTTER VOLTAGEtvCE}.4V
CASE TEMPERATURE ITe j'25-C
~ 2
50....
~ lr-r-r-r---~~--~--~~~r-~ 8 2.....
. ~.
BASE-TO- EMITTER VOLTAGE IVSEI-V

.I0.1
COLLECTOR CURRENT tIel-A COLLECTOR-fO-EMITTER VOL.TAG£. (veEI-v
Fig. 12· Typical input characteristics for Fig. 13· Typical gain·bandwidth product Fig. 14 - Typical output characteristics for
2N6467 and 2N6468. for 2N6465 and 2N6466. 2N6465 and 2N6466.
_____________________________________________________________________ 179
POWERTRANSISTORS __________________________________________________ ~ ____
2N5954-2N5956, 2N6372-2N63'74, 2N6465-2N6468, 40829, 40831
COLLECTOR-TO-EMITTER IIOLTAGE (VCE)-V

92CS-26543RT
92CS-26~5e
Fig. 15 - Maximum operating areas for 2N5954-56, 2N6372-74, Fig. 16 - Maximum operating areas for 2N6465 and 2N6466.
40829, and 40831 .•
CASE TE"PER"TUR~ 1{~cl·25·C
-6 l~Bl~·200"''' =It
8ASE CURRENT
_,~o 't
- -100 .ct~ ~jL.
tt:-~t
,,'
:::: .1!
t··'
-Ml .: ..
:~§~
.- -10: :::
-2 -4 ,:,6 -8 -10 -12 -14

COLLECTOR-lQ-EMITTER VOLTAGE IVCE)-V

2N6467 and 2N6468.
COLLECTOR-TO-EMITTER IIOLTAGE (VCE)-V

92CS-2656Q
-05 -I -1.5
BASE-lO-EMITTER VOLTAGE {VeEI-V
+For p-n-p devices, voltage and current Fig. 19 - Typical transfer characteristics
val ues are negative. for 2N6467 and 2N6468.
180 __________________________________________________________________
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829, 40831

COLLECTOR SUPPLY VOLTAGE (Vccl" 30V
COLLECTOFI SUPPlYVOLTAGEIVcclo·30V
CASETEMPERATURE(TC1oZ5"C
CASE TEMPERATURE ITCloZS"C
IBI·rez·reIlC: PrUR .... -O IBI"182"le /I0
FF
TIJ.tEf/
OFF)
~ 08
~ 06
x
:; 0.<1
0.'
0.5 I 1.5 ., COLLECTOR CURRENT {Ie I_A

BASE-lO-EMITTER VOLTAGEIV8[1 - v COLLECTOR CURRENT [lei - A
Fig. 20 . Typical transfer characteristics Fig. 27 . Typical saturated switching Fig. 22· Typical saturated switching
for 2N6465 and 2N6466. characteristics for 2N5954·56. characteristics for 2N6372·
408251. and 40831. 2N6374.
COLLECTOR SUPPLY VOLTAGE (Vccl-30V

CASE TEMPERATURE lTcI-2!5"C
IBI-1U"XC /IO
,
~ 08
~ 06
@
~ 04
1\,IftM-oM ,{,tIE t'oM}
00
StoRAGE
TIMet,.}
I 2 3
COLLECTOR CURRENT (Icl-A COLLECTOR CURRENT (Ici- A
Fig. 23· Typical saturated switching Fig. 24· Typical saturated switching
characteristics for 2N6465 characteristics for 2N6467
and2N6466. and2N6468.
_____________________________________________________________________ 181
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6032, 2N6033
High-Current, High-Speed, High-Power Transistors
Silicon N-P-N Types Features:
For Switching and Amplifier Applications • Low VCE(sad = 1.0 V max. at 40 A. 1.3 V max.. at 50 A
in Military, Industrial, and Commercial Equipment • Maximum Safe·ArH-of-OperationCurve ... 'SIb limit line beginning at 24 V
• Fast Storage Time ... ts = 1.5 ps max at IC "" 40 A (2N6033) 50A (2N6032)
• High-Current Capability ... VeE(sad & VBE measured at Ie;: 40 A (2N6033)
RCA Types 2N6032 and 2N6033* are epitaxial silicon • 50 A 12N6D32)
n-p-n transistors having high-current and high-power handling • High PT (140 W max. at Te = 250 C)
capability and fast switching speed. The 2N6033 is similar to
the 2N6032; they differ in maximum values for continuous MAXIMUM RATINGS, Absolute Maximum Values:
collector current and sustaining voltage. 2N6032 2N6033
* <'OLurrOR·TO·BASE VOLTAGr VeBO 120 150 V
They are supplied in modified TO·3 hermetic steel packages TERMINAL DESIGNATiONS
('OLLECTOR-TO-EMITTER
with 0.60-in. diameter pins.
SUSTAINING VOLTAGE
-ForlD!rly RCA Oflll. Typos TA7337 and TA7337A, respectively. With ba~e upen
With e'l(ternal ba~c-to-cmitlcr
rc,htance tRaE)::; 50 11 VeER(SUS) 110 140 V
With cxternal ba~e-to-emitlcr
Applications:
rcsi~tance CRBf.:) S50 11 &
• Switching-control amplifiers Vln. = -1.5 V VCEX(SUS) 120 150 V
• Power gates
• EMlnER-TO·BASE VOLTAGl· . VEao 7 7 V
• Switching regulators
• CONTINUOllS COLLl-n'OR CURRENT Ie 5040A
* BASE CURRENT 18 10 10 A Modified JEDEC TO-3
• Power oscillators
* :EMITTER CURRENT _ IE 5040A
• DC·R F amplifiers • TRANSISTOR DISSIPATION:
• Converters
PT (See dimensional outline "8".)
At case tcmperature~ up tu 15°('
• Inverters
and VCf.: up 10 14 V ° 140 140 W
• Control circuits Derate line~rly 10 200°(,
At r<lst' temperatures <lbuve 25 ('
Storage & Operating (JUnction) . ..tJ5to+200 °e
PIN TE¥PERATURE (During Soldering):
At di~tances.2: 1/32 in. (0.8 mm)
from seating plane for 10 s max 230 °c
tVCEI~2.SV
t040 COLLECTOR-TO-EMITTER VOLTAGE
r--.....
LIe . soA
-In accordance with JEDEC registration data format JS·6 RDF-1.
120 III § ..{Lfo.:t. .
MAX
.1~2N6012)
Ic~~~~
100
~' .
Wei f2N6011)
'Ol-~ ~<' 1-1--:.

6O~~"
1-<'
V \
<.' _r:,r:,.~ \~
'0
/ V--- I
. ... ", ...
'0
0 /,
O.Ot
,/
... 0,1
, ...II
I
COLLECTOR CURRENT (leI-A
10 100
Fig. 2 - Tvpical dc-beta characteristics

<t
0 for both types.
1
u
H
....
z COLLEcrOR-TO-ENtTTER VOLTAGE (VCElo 2 V
W
0: uuu
0:
::;)
:!J~h
+ I+"
U
0:
0
....
U
W '0
~_ '0
-l
-l
0
U
8
4
u u u ~ I ~ ~ ~
8ASE-TO-£MITTER "'Ol-TAGE tVSE)-V
Fig. 3 - Typical transfer characteristics

VCEO MAX. -120 V for both types.
12N6033)
I )0 B 100
CO~~ECTOR-TO-EMITTER VO~TAGE IVCE)-V
92CS-16020 R I
Fig_ 1 - Maximum operating areas for both types.
182
2N6032, 2N6033
ELECTRICAL CHARACTERISTICS, C.se Temper.ture (TCI = 25°C Unless Otherwise Specilied

V de A de
VcE" VBE IC IB r",n Max. Min Max
Collector-Cutoff Current: 80 - - - 10 - 10 mA
ICEO 0
With base open
Wltn base-emitter 110 -1.5 - - - 12 - -
rnA
junctton reverse biased 135 -1.5 - - - - 10
ICEV
TC = 1500 C 100 -1.5 15 - 10 rnA
Emitter-Cutoff Current lEBO -7 0 - - 10 - 10 rnA
Co Ilector -to -E m I tter

Sustaining Voltage:
VCEOIsusJ - 0.2b 0 90' - 120'
(See FIgs. 72 & 731
With base open
With external base to emitter 0.2 b 0 110' - 140' V
VCERlsus) -
resistance (Re E) < 50 rl

With base-emitter junction reverse -15 0.2 b 0 120· 150' -
VCEX lsus ) -
biased & RBE < 50 n

Base-ta-Emitter Saturation Voltage
- - SOb 5 - 2 - -
V
VBElsa'1 40 b 4 - - - 2
2 - 50b - - 2 - -
Base-to-Emitter Voltage VBE V
2 - 40 b - - - - 2
Collector-ta-Emitter - SOb 5 - 1.3 - -
VCEls.tI V
Saturation Voltage - - 40b 4 - - - 1
2.6 50 b - 10 50 - -
DC Forward-Current Transfer RatiO hFE 2 - 40 b - - - 10 50
Second-Breakdown Collector Current
IS·b
24 - - - 5.8 c - 5.B c - A
With base forward biased. t = 1 5 40 - - - 0.9 c - 0.9 c -
nonrepetitille
With base reverse biased ES:b -4 20 - 62 - 62 - mJ
IL 0 310!,H. RBE 0 5 m
Magnitude of common·emltter
small·signal, short'circuit,
forward·current transfer ratio
Ihfel 10 2 10 - 10 -
1= 5 MH7
· Gain-Bandwidth Product
1= 5 MHz
fT 10 - 2 - 50 - 50 - MHz
Output C~pacitance: Cabo - - - - - 800 - BOO pF

VCB = 10 V, I = 1 MHz
Thermal ReSistance
(Junction-ta·Casel
R8JC 10 - 10 - - 1.25 - 1.25 °e/W
-In accordance with JEDEC registration format JS·6 RDF·1.
·CAUTION: The sustaining voltages VCEO(susl, VCERlsusl, and VCEXlsusl MUST NOT be measured on a curve tracer.
b Pulsed: Pulse duration 300 /lS: duty factor <; 2%.
SWiTCHING TIME CHARACTERISTICS, Case Temperature (TCI = 2ff'C

Vdc Adc
Sat\Jrated Switching Time: IVCC=30V,
· IBI = IB21:
Rise Time tr - -
-
50 5 - 1 - - /1'
· Storage Ti me t,
-
-
-
-
-
40
50
4
5
-
-
-
-
1.5
-
-
-
1
-
/1'
· Fall Time II -
-
-
-
40
50
40
4
5
4
-
-
0.5
-
-
-
1.5
0.5
- /1'
~----------------------------------------------------------------___ 183
2N6032,2N6033
CASE TEMPERATURE (TC)'25'C

IC MAX. {CONTINUOUS)-2N8032
IC MAX. (CONTINUOUS )-2N8033
0'
10
BASE CURRENTCIeloC.Z5 A
c
I 2 ,
COLLECTOR·TO-EMITTER VOLTAGE (VcEI-V I
for both types.
...
Z
!oJ
IZ:
IZ:
COLLECTOR-lO-EMITTER VOLTAGE (VCEI-2 :>
o
IZ:
1 5
...oo
!oJ
oJ
oJ
8
, ·1
: 2
VCEO MAX.· 90V

(2N6032)
+25"C 0.1
0.2 0." 0.6 0-' I J.Z 1.4 VCEO MAX .• 120V
IASE-lO-[WITTER VOLTAGE (YaEl-V
(2N6033)
Fig. 5 - Typical input characteristics 4 8 10 100

for both types. COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
9ZCS-1744S
CASE TEMPERATURE ITe )'2S"C
SERIES BASE RE5ISTA"CE IReE )'S.ll
Fig. 8 - Maximum operating areas for both types at case temperature
• 20 (TCI = 1000 C.
~
,;'
~
,,~
\1~
0
~ ~~~ COLLECTM SUPPLY VOLTAGE IVcC ]' 30Y

Ie'IO Ie •• IOIB2
I 0
I
CASE T[~P[RATURE ITc 1'2~'C
BASE-lO-EMITTER VOLTAGE (vElEI--04V
~~~~
1.6~
g 10
8
~
. ~-"
i:'-..
I '. ~ P;:ol
1.2
r----
~
° i i
,
t-
• lOCO
!
j: 0,8
r-
INDUCTANCE (LI-JOH
Fig: 6 - Maximum reverse-bias second- 0.'

''''V ......
breakdown characteristics for ~ ~
both types.
° I.
-~
20 .0
SERIES BASE RESISTANCE (RBEI-~2CS_IT44T
CASE TEMPERATURE nc I_ 25'C Fig. 10 - Maximum reverse-bias second-

Fig. 9 - Typical saturated switching
~ I I breakdown characteristics fqr
z "0 characteristics for both types.
~I.I
.......... both types.
~~
~! 130 0"
~~
;j 120
•
~.
I
Itr---
OU I
cLJ 110 VcERIIUIl
"> I
~o
..........
r.:S ~o,J<" i I
:::::~,oo
8
.. . . ..
10 100
, . ..
.lir---
EXTERNAL BASE-lO-EMITTER RESISTANCE IRBEI-A
'.tk
"cfo!nl)
".
Fig. 7 - Collector-to-emitter sustaining

voltage characteristics for both
types.
184 ________________________________________________________________________
2N6043,2N6044,2N6045
a·Ampere N·P·N Darlington Features:
Power Transistors • Operates from Ie without predriver

• High reverse second-breakdown capability
60-,80-, 100-Volts, 75 Watts Applications:

Gain of 1000 at 4 A (2N6043, 2N6044)
• Power switching
Gain of 1000 at 3 A (2N6045) • Hammer drivers
• Audio amplifiers
The 2N6043, 2N6044, and 2N6045 are be driven directly from integrated circuits. • Series and shunt regulators
monolithic silicon n-p-n Darlington tran- These devices are supplied in the JEDEC
sistors designed for low- and medium-fre- TO-220AB straight-lead version of the VE R-
quency power applications_ The high gain of SAWATT package_
these devices makes it possible for them to

2N6043 2N6044 2N6045
• V CBO - 60 80 100 V
VCEO(sus) 60 80 100 V B
• V EBO · V C I
E
(FLANGE) I
8 A I C
• IC· I
16 A
ICM i
• lB· 0.12 A
BOTTOM VIEW
• PT : E
TC ~250C 75 W 92CS-27S19
TC >25 0 C See Fig. 2

... Tstg,T J . -65 to 150 °c JEDEC TO-220AB
• TL (See dimensional outline "S")

At distances ~ 1/8 in. (3.17 mm) from case
for 10smax. 235 °c
r-----------,
I I
8
0-- I
I
I
I
I
L _________ ~
Fig. 2 - Schematic diagram for all types.
NOTE cmRENT OERATiNG AT CONSTANT

VOLTAGE APPlIES ONLY TO THE DISSIPATION·
L1h1ITED PORTION AND THE IS/b -LIMITED
CURVE. DO NOT DERATE THE
SPECIFIED VALUE FOR Ic MAX
COLLECTOR-TO-EMITTER VOLTAGE (V CE)- V 92CM-31124

"
CASE TEMPERATURE ITCI_oC
I~ 200
Fig. 1 - Maximum operating areas for all types (T C = 2tfJC). Fig. 3 - Derating curve for all types.
_____________________________________________________________________ 185
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6043, 2N6044, 2N6045

ELECTRICAL CHARACTERISTICS,At Case Temperature (TcJ =2fPC Unless Otherwise Specified
TES:r CONDITIONS
VOLTAGE CURRENT
LIMITS U
N
...
~
-
2
.,
10
COLLECTOR-lO-EMITTER VOLTAGE (VCEI." V
j
J- f---.;. -f-~
CHARACTERISTIC I i V l.
6
Vdc Adc 2N6043 2N6044 2N6045 . :::s..
~ "~~I--l-':J.
SYMBOL T "
"\ :\:t. 'r""" V ~
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. S : / ~",<,,/ 0-
• ICEO 100 0 - - - - - 20
i 2
/4 ~qt.~" V
I---
,,\1\
§ 10' ----::~.:{~ .c.
SO 0 - - - 20 - - ~ ,
~ >---- ,~~'/
SO 0 - 20 - - - - ~ e
/
• leEV - - - - - ~ "
100 -1.5
SO -1.5 - - - 20 -
20
- JlA g '" V, . .
SO -1.5 - 20 - - - - 0.1 I
COLLECTOR CURRENT I :lei-A 92CS- 5nlzl
10
100 -1.5 - '- - - - 200 Fig. 4 - Typical de beta characteristics for al/ types
TC=1250 C SO -1.5 - - - 200 - -
SO -1.5 - 200 - - - -
.,""("
• 'EBO
• VCEO(SUS)
5
0.18
Ii
0
-
SO
2
-
-
SO
2
-
-
100
2
-
rnA
V
J
z
··,
'CBO 100b
SOb
-
-
-
-
-
-
-
20
-
-
20
- JlA
"~., ,
~ ,
· 4
~
Sob - 20 - - - - ~
z
\.
4 4 000 20.000 1000 20.000 - - *: 100
• hFE 4 3 - - - - 1000 20.000 ::l

~
4
COLLECTOR CURRENT (Ie'- 3A
4 S 100 - 100 - 100 - 2 COLLECTOR-lO-EMITTER VOLTAGE IVCEI-4V
• VBE 4
4
4
3
-
-
2.S
-
-
-
2.S
-
-
-
-
2.S V
10
CASE TEMPERATURE fTC,025"C
I
, 4 ,, 10
, 4
FREQUENCY (f)- kHz

• '100
, . ." 000
• VBE(sat) 8 0.08 - 4.5 - 4.5 - 4.5 Fig. 5 - Typical small-signal gain for all types.
92CS-1I11Z3RI
4 O,01S - 2 - 2 - -
• VCE(sat) 3 0.012 - - - - - 2 V
8 0.08 - 4 - 4 - 4
~ · ~ASE TEMPERATURE {TC I- 25"
VF -S8 - 4 - 4 - 4 V ~~
~~ t
• hfe 4 3 300 - 300 - 300 -

U u•
~~
f=l kHz ~.
ut ~
........
• Ihfe l 4 3 4 - 4 - 4 -
• u
3~
_u
......
~..
f=1 MHz ~~
~
;; ·
II
• Cobo - - - "'-0
f=l MHz
lOb 200 200 200 pF
~~ "
}
,.
. .. , . .. , .. , ,
u
'SIb 30 2.5 - 2.5 - 2.5 - A
t=l s, non rep. 833Q
2
0.1 I 10 00
R8JC - l.S7 - 1.67 - 1.S7 °C/W REVERSE VOLTAGE IVR )-y 9ZC$- 311
Fig. 6 - Typical common-base input or output
• In accordance with JEDEC registration data. capacitance characteristics as a function
I Pulsed: Pulse duration'"' 300 $d, duty factor = 1.8%. b V eB value. of reverse voltage for all types.
186 ______________________________ ~ _____________________________________

2NS050-2NS052, 2NS057 -2NS059
Features:
12-Ampere Complementary • Operates from IC without predriver
P-N-P and N-P-N Monolithic Darlington • High reverse second-breakdown capability
Power Transistors • Monolithic construction

60-80-100 Volts, 150 Watts VCEO(sus) = 60 V Min. - 2N6050·, 2N6057
= 80 V Min. - 2N6051·, 2N6058
Gain of 7000 (Typ.) at 5 A (2N6050, 2N6051, 2N6052)
= 100 V Min. - 2N6052·, 2N6059
The RCA-2N6050, 2N6051, and 2N6052 low-speed switching applications. The high
gain of these devices makes it possible for
Applications:
p-n-p types and the 2N6057, 2N6058, and
2N6059 n·p-n types are complementary them to be driven directly from integrated • Power switching
monolithic silicon Darlington transistors de- circuits. These devices are supplied in the • Hammer drivers
signed .for general-purpose amplifier and JEDEC TO-204MA hermetic steel package. • Series and shunt regulators
MAXI MUM RA TI NGS, Absolute-Maximum Values: TERMINAL DESIGNATIONS

2N6050· 2N605'· 2N6052·
c
'0
2N6057 2N6058 2N6059
• VCBO ' 60 80 100 V
• vCEO!sus) 60 80 100 V
V
• VEBO 5 ------
• IC' 12 - - - - - - A
A
• ICM . 20
• 18 , . 0.2 A
• PT W
TC <25°C 150
TC> 2SoC Derate linearly 0.857 W/oC
JEDEC TO-204MA
• Tstg' TJ . . _ _ _ _ -65 to 200 °c
• TL At distances ~ 1/16 in. (1.58 mm) from case for 10 s max. _ _ _ 235 _ _ _ _ __ °c (See dimensional outline "A".)
* In accordance with JEDEC registration data. • For p-n-p devices. voltage and current values are negative.
r---------i
I I
I I
i I
I I
I =8kn =60n I
L _ _ _ _ _ _ _ _ _ ..J
92CS-29129
Fig. 2 - Schematic diagram for 2N6050, 2N6051 ,

and 2N6052. .
-----------,
I
I
I
I
I I
I 1':$8kn :::::60n I
100 L _ _ _ _ _ _ _ _ _ ..J
COLLECTOR-lO-EMITTER VOLTAGE(VCE)- V
92CS~31714
-FOR p-n~p DEVICES ,VOLTAGE AND CURRENT 92CS-2912B
VALUES ARE NEGATIVE
Fig. 3 - Schematic diagram for 2N6057, 2N6058.
Fig. 1 - Maximum operating areas for all types. and 2N6059.
_____________________________________________________________________ 187
POWER TRANSISTORS ______~-------------------------------------------------
2N6050-2N6052,2N6057-2N6059
ELECTRICAL CHARACTERISTICS, at Case Temperature (TCI = 25°C Unless Otherwise Specified

VOLTAGE CURRENT 2N6050· 2N6051· 2N6052·
CHARACTERISTIC Vde A de 2N6057 2N6058 2N6059 UNITS
30 a - 1 - - - -
ICEO 40 a - - - 1 - -
50 a - - - - - 1 mA
60 -1.5 - 0.5 - - - -
ICEX 80 -1.5 - - - 0.5 - -
100 -1.5 - - - - - 0.5
60 -1.5 - 5 - - - -
TC= 150°C 80 -1.5 - _. - 5 - -
100 -1.5 - - - - - 5
lEBO -5 a - 2 - 2 - 2 mA
VCEO(sus) O.la a 60 - 80 - 100 - V
3 12" 100 .. 100 - 100 -
hFE
3 6a 750 18,000 750 18,000 750 18,000
12" 0.12 - 3 - 3 - 3
* VCE(sat)
6a 0.024 - 2 - 2 - 2
V
VBE 3 6a - 2.8 - 2.8 - 2.8 V

VBE(sat) 12" 0.12 - 4 - 4 - 4 V
hIe 3 - - -
5 300 300 300
1= 1 kHz
Ihle l
1= 1 MHz
3 5 4 - 4 - 4 -
Cob
VCB=10V,IEO,
1=0.1 MHz
2N6050·52 - 500 - 500 - 500
pF
2N6057·59 - 300 - 300 - 300
ISlb
t = 1 s, non rep.
30 5 - 5 - 5 - A
ROJC 1.17 - 1.17 - 1.17 °CIW
a Pulsed: Pulse duration'"' 300 ps, duty factor == 1.8%.

* In accordance with JEDEC registration data .
-0.1 z .. 6 8_ 1 Z .. 8 8'10 2
COllECTOR CURRENT(I C )-A
75 100 125 1!1O 115
CASE TEMPERATURE (TcJ-~C =U,D< ...,,,.<.T_I_OC
92CS-31715
Fig. 6 - Typical de bets characteristics for
Fig. 4 _. Current derating curve for all types. Fig. 5 - Power derating curve for all types. 2N6050. 2N6051, and 2N6052.
188 ____~---------------------------------------------------------------
___________________________________________________________ POWER TRANSISTORS
2NS050-2NS052, 2NS057 -2NS059

~ I(P~ COLLECTOR-TO-EMITTER VOLTAGE (vcEl':3 11'==== 10",
~ ' I
S 4 I
= '
~'O'r-~~
gz6~r-\"JO
.c.I
8
r- V:-_t·~
~ "
~ 2
vs,.;C/ ! \! I
":10 3
c
~
,t= ~V· .
,I- 1,\-\\ I~
~ 4
- -I----- I-~ --f--
0
c 'r-I-.
10'
0.1
, I
, , ,,
10
, , ,, 100
123456789 t 4 •• Z 4"
COLLECTOR- TO-EMITTER SATURATION VOLTAGE 10 100 1000
COLLECTOR CURRENT {Ie I-A,
lVCE("'~-V FREQUEN'f (fl- kHl
FOR p-n-p DEVICES. VOLTAGE AND CURRENT VALUES ARE NEGATIVE ,"OR lI·n-1l DEIJICES, IJOLTAGE ANO CURRENT VALUES ARE NEGATIVE
Fig. 7 - Typical de beta characteristics for 92CS-31712 92CS-31713
2N6057. 2N6058. and 2N6059.
Fig. 8 - Typical saturation characteristics for all
Fig. 9 - Typical small-signal current gain for all
types. types.
-I , _ wLL CTUH SUPPLY VOLTAGE Vee· -30'1

, CASE TEMPERATURE (Te j_ 2~oC
, i~;:i;22!)O I I
~
, , i', --- :::::: N-1,,1

~
~ -I
,
i'- "I ~
d
z , 1"- -....., Vee
X '-- "
i' , -30 V
~
, 'dAT VSE(OfF):QV
, , ~
, , I , , ,I ,
----
-0.1
" -I " -10

rtI
-0, I -100 V2
COLLECTOR CURRENT (Ie I-A APPDX-
+12V
0- -- -51
VI
APPOX--
Fig. 10 - Typical switching times for 2N6050,
2N6051. and 2N6052.
-8V 1--.)..25.5
fr,tf< IOns
DUTY CYCLE ~ I % FOR fd AND fro 01 IS
DISCONNECTED AND V2-0
I 8 COLLECTOR SUPPLYVOLTAGE(VCC)=30V
Re a RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
01 MUST eE FAST RECOVERY TYPE
FOR n-p-n TEST CIRCUIT REVERSE DIODE AND VOLTAGE POLARITIES
92C5-29138
Fig_ 12 - Switching times test circuit.
01 4 6 e 2. 4 8 10 2. 4 e 8 100
COLLECTOR CURRENT CIC I-A
Fig. 11 - Typical switching times for 2N6057,

2N6058, and 2N6059.
________________________________________________________________________ 189
POWERTRANSISTORS ______ ~ ______________________________________ ~ ______
2N6077-2N6079
High-Voltage, High-Power Silicon FfNltures:

• Maximum safe-area-of-operation
N-P-N Transistors curves
For Switching and 'Linear Applications • Low saturation yoltages
• High voltage 'ratings:
RCA 2N607?, 2N6078 and 2N6079 are ratings make this device usefu( for switch- VCER(SUS)= 300 V (2N6077)
multiple epitaxial silicon n-p-n power ing regulators operating directly from a 275 V (2N6078)
transistors utilizing a multiple-emitter- rectified 110-V or 220-V power line. The 375 V (2N6079)
site structure. Multiple-epitaxial construc- unit is rated to take surge currents up to • High dissipation rating: PT = 45 W
tion maximizes the volt-ampere charac- 5 A and maintain saturation.
teristic of the device and provides fast
switching speeds. Multiple-emitter-site de-
The 2N6079 is characterized for use in
sign ensures uniform current flow through- inverters operati ng directly from a recti-
out the structure, which produces a high fied 110·V power line. The leakage cur- TERMINAL DESIGNATIONS
ISlb and a large safe-operation area. rent is specified at 450 volts; therefore
These devices use the popular JEDEC the device can also be used in a series
TO-66 package; they differ mainly in vol- bridge configuration on a 220-V line. The
tage ratings, leakage-current limits, and VEBO rating of 9 volts eases requirements
VCE(sat) ratings. on the drive transformer in inverter appli·
The 2N6.077 is characterized for switching cations. Storage time, an important factor
in the frequency stability of an inverter,
applicati~ns with load lines in the active JEDECTO-II
is specified in Fig. 11, which shows varia-
region. These applications include sweep
tion in storage time with variation in load
circuits and all circuits using the transistor
current from zero to maximum (4 A). (See dimensional outline "N".)
as an active voltage Clamp.
Type 2N6078 is characterized for switch-
ing applications with the load line extend-
ing into the reverse-bias region. Its voltage
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6077 2N6078 2N6079

"COLLECTOR-TO-BASE VOLTAGE . . . . . • . . . • . . . . . . VCBO 300 215 375 V
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With base open . . • . . • . . . . • • . . . • . . . . . . . . . . . VCEOCsusl 275 250 350 V
" With reverse bias (VBEI of -1.5 V . . . . . . . . . : . . . . . VCEXlsuS) 300 215 315 V
With external base-to..mitter resistance (RBEI "" 600 n VCERCsusl 300 215 315 V
"EMITTER:TO-BASE VOLTAGE . . . . . . . . . • . . . . . . . . . VEBO 6 6 9 V
"COLLECTOR CURRENT: IC
Continuous • . . . . . . . . . . '. . . . . . • . . . . . . . . . . . 1 1 1 A
Peak .....................•......... 10 10 10 A
"CONTINUOUS BASE CURRENT . . . . . . . . . . . . . . . . . 4 4 4 A
"TRANSISTOR DISSIPATION:
At case temperatures up to 25°C .......•......•......• 45 45 45 W
At case temperatures above 25°C .................•.••• Derate linaerlv to 200°C
"TEMPERATURE RANGE:
Storage & Operating (Junctionl . . . . . . . . . . . . . . . . • -65 to +200
"PIN TEMPERATURE (DuringSolderingl:
At distences;> 1/32 in. (0.8 mml from case for 1.0 s max ...• 230
• 2NoSeries tVpes in accordance with JEDEC registration data format (JS-6. RDF-1/.
190 __ ~ ____ ~ ___________________________________________________

2N6077 -2N6079
ELECTRICAL CHARACTERISTICS, A t Case Temperature (TC) ~ 25°C unless otherwise specified

SYMBOL V de 2N6077 2N6078 2N6079 UNITS
A de
VCE VBE IC IB Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
ICEO 250 0 - - 2 - - - - - - rnA

250 -1.5 - - 5 - - 0.05 - - -
rnA
ICEV 450 -1.5 - - - - - - - - 0.5
(TC ~ 125°C) 250 -1.5 - - 8 - - 0.2 - - -
rnA
450 -1.5 - - - - - - - - 5
-6 0 - - 1 - - 1 - - -
lEBO rnA
-9 0 - - - - - - - - 1
VCEO(sus) 0.2" 275 b - - 250 b - - 350 b - -
V
VCER(sus)
0.2" 300 b - - 275 b - - 375 b - -
(RBE ~ 500 U)
V VEBO
(IE ~ 1 rnA)
0 6 - - 6 - - 9 - - V
hFE 1 1.2" 12 28 70 12 28 70 12 28 50
1.2" 0.2 - 1.0 1.6 - 1.0 1.6 - 1.0 1.6
VBE(sat)
3" 0.6 - 1.2 1.9 - - - - - -
V
4" 0.8 - - - - - - - 1.3 2
5" 1 - - - - 1.5 2 - - -
1.2" 0.2 - 0.15 0.5 - 0.15 0.5 - 0.15 0.5
3" 0.6 - 0.25 1 - - - - - -
VCE (sat) V
4" 0.8 - - - - - - - 0.5 3
5" 1 - - - - O.B 3 - - -
Cobo pF
(VCB~ 10 V, f ~ 1 MHz) - - 150 - - 150 - - 150
Ihfel
(f = 1 MHz)
10 0.2 1 7 - 1 7 - 1 7 -
ISlb
(Pulse duration (non· 50 0.9 - - 0.9 - - 0.9 - - A
repetitive) = 1 s)
ES/b
(RB = 50n, L=100/lH)
-4 3 0.45 - - 0.45 - - 0.45 - - mj
tl 1.2 0.2 - 0.02 - - 0.02 - - 0.02 -

t C 1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0)5
r
/ls
t C 1.2 0.2 - 2.8 5 - 2.8 5 - 2.8 5
s
t{ 1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0.75
ROJC 20 2.25 - - 3.9 - - 3.9 - - 3.9 °C/W
*2N·series types in accordance with JEDEC registration data format (JS·6, RDF·1).
• Pulsed; pulse duration< 350/ls, Duty factor = 2%.
bCAUTION: The sustaining voltages VCEO(sus), and VCER(sus), MUST NOT be measured on a curve tracer.
cVCC = 250 V, IB1 '" IB2.
________________________________________________________________________ 191
2N6077 -2N6079
3'5 COLLECTOR-lO-EMITTER VOLTAGE (VC[I'I.OV
I "I I~' II !
---r-T
: 125·C
t------+-
,:
84 S
:
~2.5i----Y;+-'-""<i--:-~-i-'-'-170~~
~O
56~~
r si-+--+-"--"---1......-M----'-H-i42 ~~
IE. I 2B~~
." 0'
COLLECTOR CURRENT 11C)-A
,
Fig. 2 - Typical normalized dc beta

characteristics for al/ types.
Fig. 3· Typical normalized dc beta

COLLECTO"-TO-EMITTE" VOLTAGE IVCE'-Y characteristics for all types.
.aU-IIOU
Note (Figs 2 & 31: To estllnate min, max. hFE at any current and
Fig. 1 . Maximum operating areas for all types. temperature~read normalized de forward.current transfer rat.o and
multlplv bv min., max specifications given m Eleclncal Character-
IstiCS CharI.
COLLECTOR"lO-EMITTER VOLTAGE IVcE' '5 V
c
I
I
0.5 I 1.5
BASE-TO-tMITTER 'IOLTAGE IV~I-V
Fig. 5· Typical transfer characteristics
!..
for all types.
8 0 •1
"m """"'''' '" .".,
t I:~::.;.
:~ IkPIc.. E''''.
10 ••
lO.O 2 3 4 5
COLLf:tTO"-TO-IMITTE" VOLTAGE IVCE'-Y COLLECTOR CURRENT IIC1-A
IICI·ItOIl
Fig. 6 - Typical saturation voltage
characteristics for all types.
192~---------------------- _____________________________________________
POWER TRANSISTORS
2N6077 ·2N6079
CASE TEMPERATURE (TC)- 25'C
L TI:S,.,
REPETITIOM RATE'IOOHI
COLLECTOI'I SUPPLY VOLTAGE ''''CC''250'o'
1.5 CASE n:MPERAnRE (Tel' 2'5'e
o. Is l,-I82
L
I •
;- .'
., 0'
BASE:. CURRENT (lel'C,IA

S 0.'
~ 2
I 2 , " '5 6 1
COLLECTOR-YO-EMITTER VOLTAGE I'o'C[I-Y
o
o . , ,
COLLECTOR CURRENT (TC1-A
2 3 4
COLLECTOR CURRENTtI.cl-A
'5
Fig. 7· Typical output characteristics Fig. 8, Typical storage·time characteristics Fig. 9 - Typical rise-time characteristic
for al/ types. for al/ types (with constant forced for a/l types.
gain!.
PULSE DURATION <: 20,.1

CASE TENPERATURE(TC}'125'C PULSE DURATlON:5 20 ,.1 REPETITION RATE' IDOHz
REPETITION RATE· 100 Hz COLLECTOR SUPPLY VOLTAGE IVeel' 250'0'
COLLECTOR SUPPLY VOLTAGE IVCC)·25011
CASE TEMPERATURE ITel' 2'5'e
CASE TEMPERATURE !Tc)' 25'C
DC BETA IhfE}·'!I Tf4ROUGH 10
Jijffiijl:m~~'· 0.' A
':..
1
0.1
B)' t62
,00
"-.
.
~O,09
I- 0.08
BASE CURRENT tlel'IOOmA
0.06
0.05
I Z 3 4 '5 6 1 2. 3 4 5
o
COLLECTOR-YO-EMITTER VOLTAGE (vcr I-v COLLECTOR CURRENT II.C I-A CURRENT IIcI-A
Fig. 10· Typical output characteristics Fig. 11· Typical storage· time characteristics Fig. 12· Typical delay· time characteristic
for al/ tvpes. for all types (with constant·base for a/l types.
drives!.
PUI.SE DURATION s:
20/",
REPETIT)ON RATE '100 Hz
COLLECTOR SUPPLY VOLTAGE IVCC)'2~OV
CASE TEMPERATURE !Tci' 25"C
.
!
1BI'-IB2
... 0.5
2. 3 4 5
COLLECTOR CURRENT !rei-A
Fig. 13· Typical fall·time characteristic

for all types.
_____________________________________________________________________ 193
POWER TRANSISTORS
2N6098-2N6103, RCA3055
High-Current Silicon N-P-N VERSAWATT Transistor

Features:
Designed for Medium-Power Linear and Switching Service
in Consumer, Automotive, and Industrial Appl·ications • Low saturation voltage -
VeE(satl = 1 V max. at Ie = 4 A
These RCA types are hometaxial-base These new VERSAWATT package transis- (2N6098, 2N6099)
silicon n-p-n transistors. Types 2N6098, tors differ in voltage ratings and in the 1 V max. at Ie = 5 A
2N6100, and 2N6102 have formed emit- currents at which the parameters are con- (2N6100,2N6101)
ter and base leads for easy insertion into trolled. They are intended for a wide 1 V max. at Ie = 8 A
TO-66 sockets. Types 2N6099, 2N6101, variety of medium-power switching and (2N6102,2N6103)
and 2N6103 are electrically identical to linear applications, such as series and • VERSAWATT Package
the 2N6098,' 2N61 00, and 2N6102, re- shunt regulators, solenoid drivers, motor- • Maximum safe-area-of-operation curves
spectively. speed controls, inverters, and driver and • Thermal-cycle rating curve
output stages of high-fidelity amplifiers.
92CS-27519
BOTTOM VIEW
JEDEC TD-220AB
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6102 >N6'" 2N6100 RCA3D55 2N6099. 2N6101. 2N6103
2N6103 2N6099 2N6101
(See dimensional outline "5".)
·COLLECTOR-TO-BASE VOLTAGE VCBO 45 70 80 100 V
~' ~::
COLLECTOR·TO-EMITTER SUSTAINING VOLTAGE:
loon .
(FLiNGE,£~_lL. __-'~
With external base-to-emitter resistance (RBel .. VCERlsusl 45 6. 7. 70 V
• With base open VCEohus) 40 60 70 60 V
With base reverse-biased '(BE'" -1.5 V VCEV husl 90 V
"EMITTER·TO·BASE VOLTAGE VEDO
'c ,. 10 10
V
A
'.
'COLLECTOR CURRENT (Continuous)
'BASE CURRENT .. 4 4 "4 A
TRANSISTOR DISSIPATION: PT BOTTOM VIEW 92CS-27520
At case temperatures up to 2SoC 7. 7. 7. 7. W
JEDEC TD-220AA
At ambient temperatures up to 2SoC 1.8 1.8 1.8 1.8 W 2N6098. 2N8100. 2N6102
• At case temperatures above 2SoC. derale IinearlV 0.6 WJoC
WJ·c (See dimensional outline "R".)
AI ambient temperatures above 25°C, derate linearlv
-TEMPERATURE RANGE:
0.0144
lODe
-
Storage & Operating IJunction)
• LEAD TEMPERATURE IDuring Soldering):
At distance> 1.8 1n.(3.17 mmJ from case of 10 small:.
-65 to 150
23.
·c
·c ~
I
l"z
·.f:::: r-J
~h~
'£
.'..
~
.. .
• 2N·Series types in accordance with JEOEC registration data formst JS·6 RDF·2. I--
'I-- rpo ~" ~
0
i 10 ,
I--
-- 11
"l> ~
"". c:,.
;;
~
~ ·· "......
~
~ 'r-- ~~g .-" ~J. '"
~
"tf T I
.. , I--;
1000
, \, .t\f. .
10,000
·o~~o.
,1\ I\.I\" . .. 100,000
I '"! NUMBER OF THERMAL CYCLES
!~ : Fig. 2 - Thermal-cycling rating for all types.
; "
i
I!_ .• _
6 8 100
I
92CS-17954
IASI-TO-blITT£It 'tIOLTAG£ CVeEI-Y
Fig. 1 - Maximum safe operating areas for 2N6098-2N6703, inclusive. Fig. 3 - Typical transfer characteristics for
all types.
194 __________________________________________________________________________________________________________
2N6098-2N6103, RCA3055
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 2g>C Unless Otherwise Specified

RCA3055 UNITS
SYMBOL V de Ade 2N6103 2N6099 2N6101
VCE VEB IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
40 1.5 - 2 - - - - - -
65 1.5 - - - 2 - - - -
ICEX 75 1.5 - - - - - 2 - -
100 1.5 - - - - - - - 5
mA
40 1.5 - 10 - - - - - -
ICEX· 65 1.5 - - - 10 - - - -
(TC ~ 150°C) 75 1.5 - - - - - 10 - -
100 1.5 - - - - - - - 30
30 0 - 2 - - - - - 0.7
ICEO 50 0 - - - 2 - - - - rnA
60 0 - - - - - 2 - -
5 0 - 1 - - - - - -
lEBO 7 0 - - - - - - - 5 rnA
8 0 - - - 1 - 1 - -
VCER(sus)
0.2 45 - 65 - 75 - 70 -
RBE = lOOn"
VCEO(sUS)" 0.2 0 40 - 60 - 70 - 60 - V
VCEV(sus)" 1.5 0.1 - - - - - - 90 -
4 4 - - 20 80 - - 20 70
4 5 - - - - 20 80 - -
hFE" 4 8 15 60 - - - - - -
4 10 - - 5 - 5 - 5 -
4 16 5 - - - - - - -
4 4 - - - 1.7 - - - 1.8
VBE " 4 5 - - - - - 1.7 - - V
4 8 - 1.7 - - - - - -
4 0.4 - - - - - - - 1.1
VCE(sat)a 10 2 - - - 2.5 - 2.5 - - V
16 3.2 - 2.5 - - - - - -
IS!bb (t;;.. 1 s) 60 - - - - - - 1.2 - A
fhfe 4 1 - - - - - - 10 - kHz
hfe 4 f~l kHz 0.5 15 - 15 - 15 - 15 120
* Ihfel 4 f=
Q.1MHz 0.5 8 28 8 28 8 28 8 -
ROJC - 1.67 - 1.67 - 1.67 - 1.67

°C!W
ROJA - 70 - 70 - 70 - 70
*2N·series types in accordance with JEDEC registration data format (JS·6, RDF·2)
·Puised, pulse duration = 300 IlS, duty factor ~ 0.018
____________________________________________________ 195
2N6098-2N6103, RCA3055
COLL!CTOR-TO-EMITTER 't'OI..TAGEt\t:E'-4V
-
.
!
I
2.'
!- 2~~
CASE TEMPERATURE (TC}-25-C
.....
~, J !
~ ...."!Os;-
t
a
~
.. ~ r_. ' t'--t'-
r---.. ~
~ '.2
I
j
QI
0.4
~ I&.
~~
0.01 r ... . ... I
COLLECTOR CURRENTIIc)-A
I . .. .•
Fig. 5 - Typical gain·bandwidth product for
all types.
It:
f?
..,
u
oJ
oJ
8
.. ••Q. 2'''.' I
•• 0
10
COLLECTCIt CtllftENT (lei-A
481
10
4 e 8 I
Fig. 6 - Typical de ·beta characteristics for
100
COLLECTOR -TO-EMITTER VOLTAGE IVCEI-V 2N6098, 2N6099, and RCA3055.
tZCS'21411
Fig. 4 - Maximum operating areas for RCA3055.
COLL(CTOR-TO~EMlTTER VOU'AGE 1VcE'·" rYe! j.4V
.
140 COL1.ECTOR-TCHMITTER VOll"AGE
! 1,20 ~
"
~""
~ ~"" ~,
~G
I •• ,..,-
i
¢l.G
~ I··~~
t;t~
1,\
~
eo
I". ;:--
y
,
I: "
I 2.
g
o.QI
I . • 0
OJ
, .
:o'"LECTOR CURRENT IIcI-A
o. • , • 0
~
.,.. , . .. . .. .
Q•
COUEC1tlR CURRENT tIc:1-A
,
Fig. 7 - Typical de beta characteristics Fig. 8-· Typical de beta characteristics for Fig. 91- Typical saturated switching
for 2N6100 and 2N61 f11. 2N6102and 2N6103. : characteristics for all types.
COl-lECTOft-TO-EIiITTER VOLTAGE (VCE1-v
Fig. 10· Typical output characteristics for Fig. 77 - Typical output characteristics for Fig. 12· Typical output characteristics
2N6098, 2N6099, and RCA3055. 2N61 00 and 2N6707. for 2N6102 and 2N6103.
196 __________________________________________________________________
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501
Epitaxial-Sase, Silicon N-P-N andP-N-P VERSA WATT

Transistors
General-Purpose Medium-Power Types for Switching and Amplifier Applications
RCA 2N6106-2N6111, 2N6288-2N6293, applications, such as series and shunt Features:
and 2N6473-2N6476, 41500 and 41501 regulators and driver and output stages
are epitaxial-base silicon transistors sup- of high-fidelity amplifiers. a Low saturation voltages
plied in a VERSAWATT package. The a VERSAWATT package
2N6288-2N6293, 2N6473, 2N6474, and The 2N6289, 2N6291, and 2N6293 n-p.n a Complementary n-p-n and p-n-p types
41500 are n-p-n complements of p-n·p types and 2N6106, 2N6108, and 2N6110 a Thermal-cycling ratings
types 2N6106-2N6111, 2N6475, 2N6476, p-n-p devices fit into TO·66 sockets. The a Maximum safe-area-of-operation
and 41501, respectively. All these transis- remaining types are supplied in the JEDEC curves specified for dc operation
tors are intended for a wide variety of TO·220AB straight-lead VERSAWATT
medium-power switching and amplifier package.
(FLA1.GE) •
""V"
i:I
/
, /c
0 I
I I
II
-J"l.
I
E
BOTTOM VIEW' BOTTOM VIEW 92CS-Z7:il9
JEDEC To-22OAA JEDEC TQ.220AB

2N81D8. 2N8108. 2N811D 2N81crt, 2N8108, 2N81'1,
2N82B9. 2N8Z91. 2N6293 2N8288, 2N8Z90, 2N8Z92.
2N6473. 2N8474. 2N8475.
2N8418,41500. 41501
NUMBER Of' THERMAL CYCLES
(See dimensional oulllne "R".) (See dimensional outline "S".)
Fig. 1 - Thermal-cycling ratings for
all types.
2N6288 2N6290 2N6292

N·P·N 2N6289 2N6291 2N6293 2N6473 2N6474 41500
MAXIMUM RATINGS, Absolute-Maximum Values: P-N·P 2N611ot 2N6108. 2N6106. 2N6475. 2N6476. 41501.
2N6111. 2N6109. 2N6107.
"COLLECTOR·TO·BASE VOLTAGE .......... . VCBO 40 60 BO 110 130 35 V
"COLLECTOR·TO·EMITTER VOLTAGE:
With external base·supply resistance IRBB) = 100£2,
and base supply voltage (VBB) = 0 ...•......... VCEX 40 60 80 110 130 35 V
With base open . . . . . . . . . =.0 V . . . . . . . . . . . . VCEO 30 50 70 100 120 25 V
"EMITTER·TO·BASE VOLTAGE . . . . . . . . . . . . . . . . . VEBO 5 5 5 5 5 3 V
"COLLECTOR CURRENT (Continuous)
At case temperature';;; 106°C . . . . . . . . . . . . . . . . . IC 7 7 7 4 4 7 A
"BASE CURRENT (Continuous)
At case temperature';;; 130°C . . . . . . . . . . . . . . . . . IB 3 3 3 2 2 3 A
TRANSISTOR DISSIPATION: PT
At case,temperatures up to 25°C . . . . . . . . . . . . . . . 40 40 40 40 40 40 W
.. At case temperatures up to 100°C . . . . . . . . . . . . . . 16 16 16 16 16 16 W
At ambient temperatures up to 25°C . . . . . . . . . . . . . 1.8 1.8 1.8 1.8 1.8 1.8 W
At case temperatures above 25°C . . . . : . . . . . . . . . . Derate linearly at 0.32 W/oC
" At case temperatures above 100°C ........... . Derate lineraly at 0.32 W/oC
A t ambient temperatures above 25°C . . . . . . . . . . . . . Derate iinearly at 0.0144 W/oc
"TEMPERATURE RANGE:
Storage and Operating (Junction) ............ . -65 to 150 °c
"LEAD TEMPERATU RE I During Soldering):
At distance ;;;'1/8 in. (3.17 mm) from case for 10 s max. . 235
"2N-Series types in accordance with JEDEC registration data format (JS·6. RDF·2) +For p·n·p devices, voltage and current values are negative
____________________________________________________________________ 197
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

E LECTR I CAL CHARACTER ISTICS, A t Case Temperature (T cJ = 2!f1 C Unless Otherwise Specified
2NS292 2NS290
CHARACTERISTIC VOLTAGE CURRENT 2NS293 2NS291
UNITS
V de A de 2NS10S· 2NS10S.
2NS107+ 2NS109·
VCE VSE Ie Is MIN. MAX. MIN. MAX.
ICER 75 - 0.1 - -
(RBE = lOOn) 55 - - - 0.1
mA
(TC = 150°C)
70 - 2 - -
50 - - - 2
75 -1.5 - 0.1 - -
'CEX 56 -1.5 - - - 0.1
mA
(TC = 150°C)
70 -1.5 - 2 - -
50 -1.5 - - - 2
40 0 - - - 1
mA
'CEO 60 0 - 1 - -
'EBO -5 0 - 1 - 1 mA
VCEO(sus) O.la 0 70 - 50 - v
VCER(sus)
0.1 80 - 60 - V
(RBE = lOOn)
4 2" 30 150 - -
hFE 4 2.5" - - 30 150
4 7" 2.3 - 2.3 -
VBE 2N6292, 2N6293 4 2" - 1.5 - -
2N6290, 2N6291 4 2.5" - - - 1.5 V
All Types 4 7a - 3 - 3
2" 0.2 - 1 - -
VCE(sat) 2.5" 0.25 - - - 1 V
7" 3a - 3.5 - 3.5
hfe
(f = 50 kHz)
4 0.5 20 - 20 -
fT
2N6290·2N6293 4 0.5 4 - 4 - MHz
2N6106·2N6109 -4 -0.5 10 - 10 -
Ihfel
(f = 1 MHz)
2N6290· 2N6293 4 0.5 4 - 4 -
2N6106· 2N61 09 -4 -0.5 10 - 10 -
Cobo
(f= 1 MHz, VCB = 10V)
0 - 250 - 250 pF
ROJC - 3.125 - 3.125

°C/W
ROJA - 70 - 70
·Pulsed; pulse duration = 300 /lS, duty factor = 0.018. .For p·n·p devices, voltage and current values are negative
"In accordance with JEDEC registration data format (JS·6 RDF·2).
CAUTION: The sustaining voltages VCEO(sus) and VCER(sus) MUST NOT be measured on a curve tracer.
198 ________________________________________________________________
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

E lECTR ICAl CHARACTE RISTICS, A t Case Temperature (TC) = 2!? C Unless Otherwise Specified

CHARACTERISTIC VOLTAGE CURRENT 2N6474 2N6473 41500
UNITS
V de A de 2N6476· 2N6475· 41501·
ICER
30 - - - - - 0.25
120 - 0.1 - - - -
(RBE = 100m
100 - - - 0.1 - - mA
(TC = 100DC)
120 - 2 - - - -
100 - - - 2 - -
120 -1.5 - 0.1 - - - -

ICEX 100 -1.5 - - - 0.1 - -
mA
120 -1.5 - 2 - - - -
(TC = 100DC)
100 -1.5 - - - 2 - -
60 0 - 1 - - - - mA
ICEO
50 0 - - - 1 - -
-5 0 - 1 - 1 - - mA
lEBO
-3 0 - - - - - 1
VCEO(sus) 0.1a 0 120 - 100 - 25 - V
VCER(sus)
(RBE = 100n)
0.1 130 - 110 - 35 - V
4 1a - - - - 25 -
hFE 4 1.5 a 15 150 15 150 - -
2.5 4a 2 - 2 - - -
4 1a - - - - - 1.5
VBE 4 1.5 a - 2 - 2 - - V
2.5 4a - 3.5 - 3.5 - -
1a 0.1 - - - - - 1
VCE(sat) 1.5 a 0.15 - 1.2 - 1.2 - - V
4a 2 - 2.5 - 2.5 - -
hfe -
(f = 50 kHz)
4 0.5 20 20 - 20 -
fT
41500, 2N6473, 2N6474 4 0.5 4 - 4 - 4 - MHz
. 2N6475, 2N6476 -4 -0.5 5 - 5 - - -
I I
hfe
(f = 1 MHz) -
41500, 2N6473, 2N6474 4 0.5 4 - 4 - 4 -
2N6475,2N6476 -4 -0.5 5 - 5 - - -
---.
Cobo
(f= 1 MHz, VCB = 10V) 0 - 250 - 250 - 250 pF
ROJC - 3.125 - 3.125 - 3.125

DC/W
ROJA - 70 - 70 - 70
·Pulsed; pulse duration = 300 MS, duty factor = 0.018. +For p-n·p devices, voltage and current values are negative.
*2N·series types in accordance with JEDEC registration data format (JS·6 RDF-2).
CAUTION: The sustaining voltage VCEO(sus) and VCER(sus) MUST NOT be measured on a curve tracer.
_____________________________________________________________________ 199
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500,41501

ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) = 25"C Unless Otherwise Specified

VOLTAGE CURRENT 2N6288 2N6110·
Vdc Adc 2N6289 2N6111·
VCE VBE IC IB MIN. MAX. MIN. MAX.
Coliector·Cutoff Current:
With external base-ta-emitter
resistance (RBE) = 100 n 35 - 0.1 - -0.1
mA
leER
With (RBE) = 100 nand
TC = 150°C 30 - 2 - -2
* With base-emitter junction

reverse-biased ICEX 37.5 -1.5 - 0.1 - -0.1 mA
* With base-emitter junction

reverse-biased and
TC=150°C 30 -1.5 - 2 - -2
With base open ICEO 20 0 - 1 - -1 mA
* Emitter·Cutoff Current lEBO 5 0 - 1 - -1 mA
Co Ilector· to· Em itter

Sustaining Voltage:
* With base open VCEO(sus) O.la 0 30 - -30 - V
With external base-to

emitter resistance VCER(sus) 0.1 40 - -40 - V
(RBE) = 100 n
DC Forward Current 4 3a 30 150 30 150

Transfer Ratio hFE 4 7a - 2.3 -
2.3
Base-ta-Emitter Voltage:
2N6288, 2N6289 VBE 4 3a - 1.5 - - V
All Types 4 7a - 3 - 3
Collector·to· Emitter 3a 0.3 - 1 - -1
VCE(sat) V
Saturation Voltage 7a 3 - 3.5 - -3.5
Common-Emitter, Small-
Signal, Forward-Current
Transfer Ratio:
1= 50 kHz hie 4 0.5 20 - 20 -
Gain·Bandwidth Product:
2N6288·2N6289 IT 4 0.5 4 - - - MHz
2N6110·2N6111 -4 -0.5 - - 10 -
Magnitude of Common-
Emitter, Small,Signal, Forward·
Current Transfer Ratio:
1=1 MHz
2N6288·2N6289
I I
hie
4 0.5 4 - 4 -
2N6110·2N6111 -4 -0.5 - - 10 -
* Collector-ta-Base Capacitance:
f= 1 MHz, VCB = 10 V Cobo 0 - 250 - 250 pF
Thermal Resistance:
Junction-ta-Case ROJC - 3.125 - 3.125 °C/W
Junction-ta-Ambient ROJA - 70 - 70
apulsed: Pulse duration = 300 J.1s. duty factor = 0.018. +For p-n-p devices. voltage and current values are negative.
*In accordance with JEDEC registration data lor mat (JS-6 RDF·2).
CAUTION: The sustaining voltage VCER(sus) MUST NOT be measured on a curve tracer.
200 ________________________________________________________________________
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501
.
£
I to
COU£CTOft-TO-lIIIITTDIi \IOI".TIGlI'ICE.I--4V
CASE TE"'IUTURE ITf I·ZI"C I I I
·,,~ :,...- ~~
~
~
~ -....;:
%
~ f'ii .•
'~
i
~ i'--
z
~ · . .. . . \
·
-0.01
, . .. ..eOLL£tTOA CURfI£NT IIcl-"
,
Fig. 4 . Typical gain·bandwidth product for

2N6106-2N6111, 2N6475, 2N6476,
-
and 41501.
~~
,
. CO!..LECTOR -1"O-["'TT[R VOLTAGE! VCE1.-4 V
CASE TEMPERATURE Pc"2S"C
~ '1--+---+--+-+-lII~--+--+-+-+-+1- - l
.. 0.'
COL.LECTOR CURRENT tfel-A
92CS-2770Q
Fig. 2· Maximum operating areas for 2N6106-2N6111 and 41501. Fig. 5 - Typical gain·bandwidth product for
2N6473 and 2N6474.
!'O~~~~+-I--l-
; ,
~
~ 6
Fig. 6· Typical gain·bandwidth product for

2N6288-2N6293, and 41500.
.
I
COLLECTOR-TO-[MITTER VOLTAGE IVCElo-4 V
~-!5
~ -4
~
-0.5 -I -1.& -1
UK-TO-EMITTER VOLTAGEIVI[)-V
COLLECTOR -TO -EMlTTER VOLTAGE (VCE)- v 92CS-22521 Ilet-IIOIl
Fig. 7· Typical transfer characteristics for

Fig. 3· Maximum operating areas for 2N6475-c2N6476. 2N6106-2N6111.
_____________________________________________________________________ 201
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501
COLLfCT(lR-TO-EMITTER VOLTAGE IvtEla .. V
c
1
....u
...z
OJ
It:
It:
:>
u
It:
... ..
,
''''Sf-TO-EMITTER VOlTAGEIVS(1 - I I
~
oJ
oJ 2N6473 and 2N6474.
8
COLLECTOft-TO-EMITTER VOLTAGE '''tEla.4 V
10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE1-V
92CS-27702
Fig. 8· Maximum operating areas for 2N6288-2N6293 and 41500.
-os ·1 -1.5
USE-fO-UUTTER VOLTAGEIV SE ' - V

2N6475 and 2N6476.
~ 6
! ~'t--t--t--H-t---t----I
~ 'r-~-~-+-r--+--r-~r--+--~~
.. 0.1 I
COLLECTOR CURRENT !ICI-A
. .. ,.
2N6473 and 2N6474.
• • I
10
COLLECTOR-TO-EMITTER VOLTAGE IVCE)- V
92CS-22524
Fig. 9 - Maximum operating areas for 2N6473 and 2N6474. ,. . .. . ..

-0.01 -0.1 -, -'a
COLLECTOR CURRENT (lei-A

2N6106-2N6111.
202 _____________________________________________________________________
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501
6 ,
-0.,
... &.
COlLECTOR CURRENT UCI-A

8
-I
. ..-,. ... -0.1 -I
COLLECTOR CURRENT tIel - A
....,. COLLECTOR CURRENT 11,I-A
Fig. 14· Typical dc beta characteristics for Fig. 15· Typical dc beta characteristics for Fig. 16· Typical dc beta characteristics for
2N6475 and 2N6476. 47501. 2N6288-2N6293, and 41500.
VCEO NAJC -!lOV

12N6290 a 2"62911
.:c-t=:t=t:A:
..
\/CEO MAX ·70 v
t2N6292 a 2N6293J
.. &.8 2 4 &'10'100 l 10 )0 ~o 11) lOa

COLLECTOR-TO-EMITTER VOLTAGE tVCEI-v COLLECTOR· TO -EMITTER VOLTAGE I \ICEI~ IJ
Fig. 17· Maximum operating areas for Fig. 18· Maximum operating areas for
2N6473-2N6474. 2N6475 and 2N6476.
2N6288-2N6293.
J v
.
COLLECTOfI-TO-EMITTER VOLTAGE (Vetl''l11 COLLECTOR - TO - EMITTER VOLTAGE (VCEI. -4
1
.,.
e
·300
~
~
~ r~
N",
,r/
."
.::
u ,
:t.~t>.t. ~...rf'
o
~ 2:
l'
02 0:4 ,a BASE-TO-EMITTER VOL.TAGE {VSEI-v

-a
eASE-TO-EMITTER VOLTAGEWSEI - \I USE - TO-EMITTER YOLTAGE 1 VBEI - V

Fig. 20· Typical transfer characteristics for Fig. 21 . Typical transfer characteristics for 2N6106-2N6"', 2N6475, and
2N6288-2N6293, and 41500. 41501. 2N6476.
COlLECTOA-TO-ENITTEA VOLTAGE I 'ICE}." \I COlLECTOR - TO -EMITTER YOLTAGE I YC£I'" Y
E 2!10
.e a - l'
~
~ aD. ~ ~
,.. ~
I
:1 ~
0.1 I I.'
BASE-TO-EMITTER VOLTAGE 1V8EI-V
-0.' -I -15
BASE-TO-EMITTER VOLTAGE 1V8EI-V
-2 . 0.1 0.'
8ASE-TO-EMLTTER YOLTAGE IV8El-V
Fig 23· Typical input characteristics for Fig. 24· Typical input characteristics for Fig. 25· Typical input characteristics for
2N6473 and 2N6474. 41501. 2N6288-2N6293.
_____________________________________________________________________ 203
·POWERTRANSISTORS ______________________________________________________
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

I"'" "MPERATURE ITc 1·2.·C
: ....
' ..
4 • 10 12 14
COLLECTOR-YO-DIII"IR VOLTAGEIVcEI-Y
C:OUECTOR-TO-E'M'TTU VOLTAor 1VcEl-V
Fig. 26· Typical output characteristics for Fig. 27 - Typical output characteristics for Fig, 28· Typical output characteristics for
2N6288-2N6293, and 41500. 2N6'06-2N6"'. 2N6473 and 2N6474,
-:u CAS(
:11'
TEW'ERATUREITCI·2~-C:
II'
t.!'1.ti
HH";;Ii;,;!l::: j!;; ::::,::::
I"" .".
-, !II !!lIf!BASECURREHTIIB'-·Z50"''' '"I~'''

1_2, :1: i H1't ; . "._200"'_ ;-::: ::::
i_~::; . ~ ;'; ; ; ;!.; :;E:~ . . : .:

~
~ ,l',: ,::i ;,!,:: ... -20"'" ;;;1 ,,, .
I ~ 4 4 444 4 4
C:OLLrcTOR-TO-IEM'TTlR VOLTAGE IVCEI-V COLLECTOR-YO-EMITTER VOlTAGE IVCE'-V
I.I!CS-2HU
Fig. 29· Typical output characteristics for Fig. 30 - Typical output characteristics for
2N6475 and 2N6476. 41501•
• 4 __________________________________________________________________
POWER TRANSISTORS
2N6121-2N6123, 2N6124-2N6126
Features:
Epitaxial-Base, Silicon • Low saturation voltages
N-P-N and P-N-P • VERSAWATT package
VERSAWATT Transistors • Complementary n-p-n and
p-n-p types
• Thermal-cycling ratings
General-Purpose Medium-Power Types for • Maximum safe-area-of-
Switching and Amplifier Applications operation curves specified
for dc operation
The RCA-2N6121, 2N6122, and 2N6123 All types utilize the JEDEC TO-220AB
are epitaxial-base n-p-n transistors. The (RCA VERSAWATT) plastic package.
2N6124, 2N6125, and 2N6126 are epitaxial· All these transistors are intended for a wide
base p-n-p transistors. They are complements TERMINAL DESIGNATIONS
variety of' medium-power switching and
to 2N6121, 2N6122, and 2N6123, re- amplifier applications, such as series and
e
spectively. shunt. regulators and driver and output
stages of high-fidelity amplifiers. c
IFLANGEI
c
BOTTOM VIEW
MAXIMUM RATINGS, Absolute-Maximum Values: E
9ZCS-27519
N-P-N 2N6121 2N6122 2N6123
P-N-P 2N6124. 2N612S. 2N6126.
JEDEC TO-220AB
o V cso ' 45 60 SO v
o VCEO'sus) 45 60 SO v (See dlmenllonal outline "S".)
o V EBO ' 5 V
o IC' 4 A
o lB' A
PT
_ _ _ _ _ 40 W
• TC ;;'250C
_ _ _ _ _ 16 W
TC '>250C ";;100 0 C
TC >250C Derate linearly 0:32 wIDe
_ _ _ _ _ I.S W
TA ";;250 C
TA >25 0 C Derate linearly 0.0144 W/oC
o T stg , T J .. _ _ _ -65 to 150 °c
* TL
At distances :>1/8 in. (3.17 mm) from case
for 105 max. . 235 °c
• In accordance with JEDEC registrati.on data. • For p-n-p devices, voltage and current values are negative.
18 50 75 100 125 150 115 zoo

CASE nUPERATUIlE lTc:I--C
Fig. 2 - Current derating curves for all types.
~400
COL.L.ECTOR4T04Et.tlTrER VOL.TAGE(VCElo ..
Loo CAJE TEJPERlTUE (lc,Ls.c
I;;:oj-.
~
= eo
~
100
-40"C
~ ~
60 .......
'0
~ " "."t\
I 20
1!
g 10
1\
8
• II • I I
COLLECTOR-TO-EMITTER VOLTAGE IVCZ)-V
0.01 0.1 10
COlLECTOR CURRENT Ucl-A
Fig. 1 - Maximum operating areas for all types. Fig. 3 - Typical dc beta characteristics for a/l types.
_____________________________________________________________________ 205
2N6121-2N6123, 2N6124-2N6126
COLLECTOR -TO-EMITTER VOLTAGE 1Vcr.J- .. v
ELECTRICAL CHARACTERISTICS At Case Temperature (TcJ =25°C
.E ,
~
~
? ~ ~
u

~ ~
VOLTAGE CURRENT 2NS121 2NS122 2NS123 g

CHARAC· Vdc Adc 2NS124· 2NS125· 2NS12S· UNITS ~
~
TERISTIC
VCE VBE 'C 'B MIN MAX. MIN MAX. MIN. MAX. ! 100 ~
45a - 0.1 - - - - '0

'CBO Soa - - - 0.1 - - o
80a - - - - - 0.1 0.1 0.'
BASE-tO-EMITTER VOLTAGE (VaEI-V
* 'CEX 45 -1.5 - 0.1 - - - -

SO -1.5 - - - 0.1 - - Fig. 4 - Typical input characteristics for all types.
80 -1.5 - - - - - 0.1 mA
45 -1.5 - 2 - - - -
Tc= 1250 C 60 -1.5 - - - 2 - -
80 -1.5 - - - - - 2
* 'CEO 45 0 - 1 - - - -
SO 0 - - - 1 - -
80 0 - - - - - 1
* 'EBO -5 0 - 1 - 1 - 1
* VCEO (sus)b O.lC 0 45 - SO - 80 - V
* hFE 2 1.5c 25 100 25 100 20 80

COLLECTOR-tO-EMITTER VOLTAGE IVCEI·"V
2 4c 10 - 10 - 7 -
* VBE 2 1.5c - 1.2 - 1.2 - 1.2
V
VCE(sat) 1.5c 0.15 - O.S - O.S - O.S
4c 1 - 1.4 - 1.4 - 1.4
* Ihfel (f=l MHz) 4 1 ~.5 - 2.5 - 2.5 -

* hfe (f= 1 kHz) 2 p.l 25 - 25 - 25 -
ROJC - 3.125 - 3.125 - 13. 125 oCIW
0.2 0:4 0.0 0.8 1-2 1.4 ...
• In accordance with JEOEC registration data. aVes value. BASE-TO-EMITTER VOLTAGE IVUE I - v
bCAUTION: The sustaining voltage VCEO(sus) C Pulsed: Pulse duration =300 J,JS, duty factor =0.018.
MUST NOT be measured on a curve tracer. +For p·n·p devices, voltage and current values are Fig. 5 - Typical transfer characteristics for all types.
negative.
~ ~.CEO(SUS)
=>.
~~ ABC
COLlECTOR-TO-EMITTER VOLTAGE ('1(:£'-4\1 ,w
"" gl' 100
CASE ,TEIllPERATlft; ITcl-ZS·C 00
25",H
~!::!
.
0 45 80
'" J W MILLER No. "533,
- r--~--l
'[03\1
OR EQUIVALENT
In 1'%,1I2W
8COLLECTOR-TO-~MITTER (VCE)-V
VOLTAGE
V'" 60Hz
,I ,I (NC)N-tNOUCT'VEJ 92CS-31101
·v l _____ J
\ GNO
OSCILLOSCOPE:
INPUT Note:
"·'1
CHOP PEA TYPE
HEWlETT-~KARD
4 MERCURY RELAY MODEL No 130a. Curve will be inverted and polarity reversed.
2
1\ P 80 B JML 81308,
CLARE 1028, OR
EOUIVAlENT
OR EQUIVALENT The sustaining voltage, VCEO(SUS), is
acceptable when the traces flillto the right
and above the designated points:
L---{or . • 'W
COLLECTOR
,
cuRRE~T
. .. ,
!Fcl-A
, . """" Point A: 2N6121, 2N6124
Point B: 2N6122, 2N6125
Point C: 2N6123, 2N6126
NOTE: FOR p-n-p TYPES,REVERSE POLARITY Of'VCC'
"ct·.IIOt
Fig, 6 - Typical gain-bandwidth product. Fig. 7 - Circuit used to measure sustaining IIolrage Fig. 8 - Oscilloscope display for measurement of
VCEO(susl for al/ types. sustaining voltage (test circuit shown in Fig. 7).
206 ___________________________________________________________________
2N6129-2N6131, 2N6132-2N6134
Features:
Epitaxial-Base, Silicon N-P-N and P-N-P • Low saturation voltages
• VERSAWATT package
VERSAWATT Transistors • Complementary n-p-n and
p-n-p types
General-Purpose Medium-Power Types for • Maximum safe-area-of-
operation curves
Switching and Amplifier Applications
The RCA-2N6129, 2N6130, and 2N6131 applications, such as series and shunt
n-p-n transistors and their complementary regulators, and driver and output stages
p-n-p types, 2N6132, 2N6133, and 2N6134, of high-fidelity amplifiers.
C
respectively, are epitaxial-base tran- All types utilize the JEDEC TO-220AB (FLANGE)
sistors intended for a wide variety of (RCA VERSAWATI) plastic package.
medium-power switching and amplifier
E
!
9ZCS-27519
MAXIMUM RATINGS, Absolute-Maximum Values: JEDEC TO-220AB

N·P·N 2N6129 2N6130 2N6131
P·N·P 2N6132. 2N6133. 2N6134. (See dimensional outline "S".)
VC80.............................. 40 60 80 V
V CEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . 40 60 80 V
VE80 .............................. ------ 5 V
Ie ................................ . 7 A
18································ . 3 A
Pr
Te =25"C .......................... . 50 W
Te =100"C ......................... . 20 W
Te>25"C .......................... . Derate linearly 0.4 W/"C
Tstg,TJ ........................... . -65to +150 'C
TL
At distances;' 1/8 in. (3.17 mm) from
case for 10 s max ................... . 235 "C
In accordance with JEDEC registration data .

100 115 ZOO

" CASE TEMPERATURE ITC)-·C
Fig. 2-Current derating curves for all types .
00'
. ,. 0.'
. ,. '0
COLLECTOR CURRENT IICI-A
92CM-32564
Fig. 3- Typical dc beta characteristics for

Fig. 1- Maximum operating areas for
all types.
all types.
________________________________________________________________________ 207
2N6129-2N6131, 2N6132-2N6134
= 25°C
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC)
Unless Otherwise Specified 1500
,il' 'i -
~LLECTORilTO-EMITTER VOLTAGE: lYeE'_4'1
1 11
Tast Conditions. Limits 1250
:!!! lilt i!l
1;11'1 1
Charac·
Voltaga
Vdc
-Current
Adc
2N6129
2N6132.
2N6130
2N6133.
2N6131
2N6134. Units
1000
:!: .1;
HI!t'
l itt -.~
,
tarlstlc VCE Ic Min._ Max. Min. Max. Min. Max.
750
,!9.
VeE Ie
- - :ill [1i
ICBO
4011
soa
80a
-
-
.-
0.1
-
-
-
-
-
-
0.1
-
-
-
-
-
0.1
500
250
:::j If!
iiilOJ!' lU .~
d
40 -1.5 - 0.2 - - - - 0 os ." I I .2S lIS 1.75
ICEX 60 -1.5 - - - 0.2 - - SASE-to-EMITTER VOLTAGE 1Y8EI-V
80 -1.5 - - - - - 0.2
mA
Fig. 4-Typlcallnput characteristics for
40 -1.5 - 2 - - - - all types.
• TC= 125"C 60 -1.5 - - - 2 - -
80 -1.5 - - - - - 2
40 0 - 2 - - - -
·ICEO 60 0 - - - 2 - -
80 0 - - - - - 2
• lEBO -5 0 - 1 - 1 - 1
• VCEO(sus)b 0.1C 0 40 - 60 - 80 - V
4 2.SC 20 100 20 100 20 100
• hFE
4 7c 7 - 7 - 5 -
• VBE 4 2.SC - 2.0 - 2.0 - 2.0
V
VCE(sat) 7C 3 -" 1.4 - 1.4 - 1.8
• hlel
(1=1 MHz)
4 -1 2.5 - 2.5 - 2.5 -
• hie
(I = 1 kHz)
4 0.1 25 - 25 - 25 -
R6JC - 2.5 - 2.5 - 2.5 °CIW
BASE-lO-EMITTER VOLTAGE (YBE'-V
92CS-32562
• In accordance with JEDEC registration data. a Vce value. Fig. 5-Typical transfer characteristics
b CAUTION:,The sustaining voltage ' C Pulsed: Pulse duration = 300 lIS, duty factor for all types.
VCEoIsuli) MUST NOT be measured on a - = 0.Q18.
curve tracer. • For p-n-p devices, voltage and current
values are negative.
IZICOLLECTOR-TQ-EMITTER VOL.TAGE WcE'.4Y
H-
• CASE TEMPERATUREIT C ,- 25-C
f-
.
1/ CASE TEMPfRATURE 1TC'.25·C
i 10
I
'£ 8
./ '\.
!'
i ,• 7 !
:
'\
\ ' I,
I! 4
3
2
I
'I
: , I
I i ' ,
I I:
i I I
.
I
., .
I
I
0.01
, ,, ., , , , 10
COUECTOR CURRENT Uel-A 0.1 2 4" I I 4" 10
COLLECTOR CURRENT lIe I-A "C'-525U
Fig. 6- Typical galn·bandw/dth product. Fig. 7-Typlcal collector-to-emitter saturation

voltage for all types.
208 ____________________________________________________________________
POWER TRANSISTORS
2N6211-2N6214
Features:
High-Voltage, Medium-Power Silicon • High voltage ratings:
VCEO(sus)::::, -400 V max. (2N6214)
P-N-P Transistors ::::. -350 V max. (2N6213)
::; -300 V max. (2N6212)
"" -225 V max. (2N6211)
• Large safe·operating area
For Switching and Amplifier Applications • Complements to 2N3585 transistor family
In Military, Industrial, and Commercial Equipment • Thermal-cycling rating
RCA tYpes 2N6211. 2N6212, 2N6213, and 2N6214· are Applications:

epitaxial silicon p-n-p transistors with high breakdown-voltage • Power·Switching Circuits
ratings and fast switching speeds. They are supplied in the TERMINAL DESIGNATIONS
• Switching Regulators
popular JEDEC TO-66 package; they differ in breakdown- C
• Converters
'~
voltage ratings and leakage-current values.
• Inverters
• Formerly RCA De.... Nos. TA7719, TA741O. TA8330, and TA8331, • High·Fidelity Amplifiers
re~pectlvely.

2N6211 2N6212 2N6213 2N6214
"COLLECTOR·TO·BASE VOLTAGE V CBO -275 -350 -400 -450 V
ncs·z" ..
With base open VCEO(SUS) -225 -300 -350 -400 V JEDEC TO·66
With external base-ta-emitter resistance (ABEl = 50 n VCER(sus} -250 -325 -375 -425 V
With base·emitter junction reverse·biased (V SE '" 1.5 V) . VCEX(sus} -275 -350 -400 -450 V
"EMITTER·TO·BASE VOLTAGE V EBO -6 -6 -6 -6 V (See dimensional outline UN".)
"COLLECTOR CURRENT (Continuous) . -2 -2 -2 -2 A
'C
-BASE CURRENT (Continuous) -1 -1 -1 -1
'B A
At case temperatures up to lOOoC and V CE up to 50 V 20 20 20 20 W
At case temperatures up to 2SoC and VCE up to 40 V 35 35 35 35 W
At case temperatures up to 25°C and VCE above 40 V . See Fig. 1
At case temperatures above 25°C . . . • • . • • • • • • . . • • • . Derate linearly to 200°C
"TEMPERATURE RANGE:
Storage & Operating (Junction) -65 to 200 DC
·• I
""LEAD TEMPERATURE (During Soldering):
At distance 2: 1/32 in. (0.8 mm) from case for lOs max. 230 DC
"In accordance .... ith JEOEC registration data format (JS·6 RDF·ll
8 10 Z 4 6 'Ibo Z 4 6 '1000 Z
NUMBER Of" THERMAL CYCLES (THOUSANDS)
Fig. 2· Thermal·cycling rating ahart for

alf types.
: COTTOIT1TTET'T"CEI.-OV -
.S ,
•
~
100
CASE TEMPERATURE (TC)"150"C
l
TC"25"C
b
~ 6
~ ·
~ , 11'1
I
~
10
,
\'
g
- · , . ., 0.1
, ..-I
, 6 8_10
9ZCS-l!lZI9
6 e Fig. 3 - Tvpical dc beta characteristic

-10 -100
C*lECT~-TQ-EfoItTTERVOLTME lVc!+-V for alf types.
ucs- 11220"1
Fig. 1 . Maximum operating areas for all types.
_____________________________________________________________________ 209
POWERTRANSISTORS----------________________________________________________
2N6211-2N6214
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tcl = 25°C Unless Otherwise Specified
Voltage Current
Vdc Adc 2N6211 2N6212 2N6213 2N6214
I Coliector·Cutoff Curren': ICEO
With base open -150 0 - -S - -S - -S - -S
2S0 I.S -0.5 - --
---
With base-emitter june- -
-315 I.S - - -0.5 - -
lion reverse· biased
ICEV
-360
-410
1.5
1.S
-
-
-- -- -- -05
- -- -1 mA
With base-emitter june- -2S0 1.5 5
tion reverse biased and -315
-360
I.S
I.S
-- -
-
-
--
-5-
--
-.
- -S- -
- --
TC = l00"C -410 I.S - - - - - -10
Emitter-Cutoff Current lEBO 6 0 - 1 -O.S 0.5 0.5 mA
-2.8 I" 10 100
DC Forward-Current -3.2 -1· 10 100 - - - -
hFE
Transfer Ratio -4 -1· - 10 100 -
-5 -1· - 10 100
Collector-to- Emitter
Sustaining Voltage VCEOlsusl _O.2a 0 -225 - ·300 -350 - -400
With base open
With ex ternal base- to-
emitter resistance VCERlsus -O.2a 250 -325 ·375 -425
IRBEI - 50!! V
With base-emitter june
tion reverse· biased and 350 400 -450
VCExlsus 15 -O.2a 275
external base to-emitter
resistance (RBel 50 !!
Emitter-to Base Voltage VEeO 0.5mA ·6 6 -b

V
1 mA 6 - -
Emltter'fa-Base Satura 14 ·14 ·14 -1.4
VeElsati -I" 0125 V
tlon Voltage
Collector to- Emitter 1.6 - -2 -2.5

VCE Isall -I" 0125 14 V
Saturation Voltage
Output Capacitance ·10 - 220
Cabo 220 220 220 pF
If· 1 MHll IVce '
Second-Breakdown
Collector Current ISlb -40 0.875 -0.875 -0.875 - -0.8l! - A
(Base forward· biased I
Magnitude of Common
Emitter, SmaU,Slgnal,
Short,Clrcuit, Forward Ihfel -10 ·0.2 4 - 4 - 4 - 4 -
(f = 5 MHll
Saturated Switching Times VCC ~ IB1&"82
Rise lime
'r -1 0.6 0.6 - 0.6 - 0.6
-200 V -0.12S
VCC IB1&182
Storage lime Is
0
-1 - 2.5 - 2.5 - 2.5 - 2.5 ps
-200 V 0.125
VCC - 1Bl&182
Fall time If -1 - 0.6 - 0.6 - 0.6 - 0.6
-200 V -0.12S
Thermal Resistance -
(Junction·to·case)
ROJC -10 -1 - 5 - 5 - 5 S °CIW
• In accordance with JEOEC registration data format JS·6 RDF.,.

"PulSed. pulse duration'" 300 p. s; dutv factor ~ 2%.
210----------------------------------___________________________________
2N6211-2N6214
COLLECTOR-TO-EMITTER VOLTAGE (VeEI--IOV
CASE TEMPERATURE { Tel" 2.5·C
... . .. -'0
.
-0.1 -I
-,
. ,. -10 -100
COLl.ECTOR-TO-EMITTER VOLTAGE {Vee I-V
,-'000
COLLECTOR CURRENT tIc I - A
COLlECTOA CURRENT IIcl-A
Fig. 4 - Maximum operating areas for Fig. 5 - Typical gain-bandwidth product Fig. 6 - Typical saturation-voltage
all types. for all types. characteristics for all types.
-0.5 -. -1.5 -2
"'c , -Z.5
COLLE~TOA CURRENT tIC1;-A COLLECTOR CURRENT t1c.)-A 9ZCS-I!l980R2 BASE-TO-EMITTER VOLTAGE IVBEI-v
Fig. 8 - Typical turn·on time and fall-

Fig. 7 - Typical storage· time characteristic Fig. 9 - Typical transfer characteristics
time characteristics for all
types.
________________________________________________________________________ 211
POWER TRANSISTORS
2N6246, 2N6247, 2N6248, 2N6469,2N6470, 2N6471, 2N6472

Silicon N-P-N and P-N-P Epitaxial-Base High-Power
• High dissipation capability: 125 W at 25°C
General-Purpose Type. for Switching and Linear-Amplifier Applications • low saturation voltages
RCA.2N6246, 2N6247, 2N6248, and 2N646~ are epitaxial· and in the currents at which the parameters are controlled. • Maximum safe-area-of-operation curves
base silicon p-n-p transistors featuring high gain at high cur· All are supplied in the JEDEC TO·3 package. • Hermetically sealed JEDEC TO-3 package
tent. RCA-2N6470, 2N6471. and 2N647~ are epitaxial· base • High gain at high current
silicon n-p-n transistors. They may be used as complements to ... Formerlv RCA Dev. Nos. TA7281 , TA7280, TA7279. and TA8724, • Thermal-cycling rating curve
the 2N6469,' 2N6246. and 2N6247. respectively. All of these respectivelv.
devices have a dissipation capability of 125 watts at case Formerlv RCA Dev Nos. TA8726, TAB443, and TA8442. re- TERMINAL DESIGNATIONS
temperatures up to 2SoC. They differ in voltage ratings spec:uve'v.
MaXImum Ratings, Absolute·Ma)(lf7lUm Values

N·P-N 2N6470 2N6471 2N6472
P·N-P 2N646~ 2N6246. 2N6247. 2N6248.
"'COLLECTOR·TO·BASE VOL TAGE VCBO 50 70 90 110
COLLECTOR·TO·EMITTER VOLTAGE
WIth external base to-emitter
reSIStance (RBEI ~ 100~!. VCER 50 70 90 110 V
With base open JEOEC TO-3
VCEO 40 60 SO 100 V
"'EMITTER TO BASE VOL TAGE VEBO 5 5 V (See dimensional outline "AU.)
'"CONTINUOUS COLLECTOR CURRENT Ie 15 15 15 10 A
--
.
'00
"'CONTINUOUS BASE CURRENT
"'TRANSISTOR DI$SIPA TlON
IS
PT
5 5 5 A ,,---
,
-.~
r-----
"-
+ --
c-
r-----
At case temperatures up to ~50C 125
o.!-
~
125 125 125 0
W
At case temperatures above 25°C __ Derate linearly 200 C ~ 1- .~
"TEMPERATURE RANGE z
'r----- r----- " 1\ '>
0
~".
~ r----- r- ~
Storage & Operating (Junction). _ -65 to +200 - - - - - + °c ~~
1\ \ I~ '.
*PIN TEMPERATURE lOuring Soldermgl
~
~
At distances? T132" (0.8 mm) from
sealmg plane for IDs max +235 °c " 'r--- r----- ~'
o~
-
'" In acco.dance Wllh JEDEC .t'9,SI.allon (tala tormal us 6 RDF]I ~ I ~~
,.g\~ , . "rtf
;. ;. ~~ rY
0."
'0 , , " ,
I 10 " 10 2 10 3
NUMBER OF THERMAL CYCLES (IN THOUSANDS)
Fig_ 1 - Thermal-cycling rating chart

for all types.
<t
I >--
u z
!:! "'0:0:
>-- :>
Z u
"'
0:
0:
0:
0
:> >--
u U
0:
0 "'--'--'
>--
<.>
0
<.>
"'--'--'
0
<.>
COLLECTOR-TO-EMITTER VOLTAGE IVCE)-V
92C5-22380

Fig. 3 - Maximum operating areas for all types.•
92C5-22379
Fig. 2 - Maximum operating areas for all types. +
• For p·n-p devices, voltage and current values are negative.
212 _____________________________________________________________________
2N6246, 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472

-
ELECTRICAL CHARACTERISTICS FOR N·P·N TYPES A t case temperature ITC) : 25°C unless otherwise specified
TEST
CONDITIONS LIMITS
VOLT· CUR·
CHARACTERISTIC SYMeOL AGE RENT 2N6470 2N6471 2N6472 UNITS
Vde A de
VCE Ic Ie Min. Max. Min. Max. Min. Max.

Colleetor·Cutoff Current: 35 - 500 - - - -
With external base-emitter ICER 55 - - - 500 - - Il A
resistance (RBEI = 100 n 75 - - - - - 500
With base·emitter 45 - 500 - - - -
junction reverse-biased 65 - - - 500 - - IlA
VeE = -1.5 V 85 - - - - - 500
ICEX
With reverse bias, 40 - 5 - - - -
VBE = -1.5 V. and 60 - - - 5 - - rnA
TC = 1500 C BO - - - - - 5
With base op~n ICED 20 0 - 1 - - - -
30 0 - - - 1 - - rnA
40 0 - - - - - 1
Emitter-Cutoff Current:
VeE = -5 V lEBO 0 - 1 - 1 - 1 rnA
DC Forward·Current 4 5a 20 150 20 150 20 150
hFE 4 15a 5 - 5 - 5 -
Transfer Ratio
Coliector·to·Emitter
Sustaining Voltage: VCEO(sus) 0.2 0 40b - 60 b - 80 b -
With base open
V
With external base-emitter
VCER(sus) 0.2 SOb - 70 b - 90b -
resistance (RBE) = 100 n
4 5a - 1.3 - 1.3 - 1.3
V
Base·to·Emitter Voltage VBE 4 15 a - 3.5 - 3.5 - 3.5
Collector·to·Emitter 5 a 0.5 - 1.3 - 1.3 - 1.3

V
VCE(sat)
Saturation Voltage 15 a 5 - 3.5 - 3.5 - 3.5
Magnitude of Common· Emitter

Small·Signal Short·Circuit
Ihfel 4 1 5 - 5 - 5 -
Forward·Current Transfer Ratio:
f = 1 MHz
Common·Emitter. Small·Signal.
Short,Circuit. Forward·Current
hfe 4 1 25 - 25 - 25 -
Transfer Ratio:
f = 1 kHz
Thermal Resistance:
Junction-ta-case ROJC - 1.4 - 1.4 - 1.4 °C/W
• In accordance with JEDEC registration data format (JS·6 RDF-2), b

CAUTION: Sustaining voltages VCEO(sus) and VCER(sus)
a Pulsed; pulse duration'; 300 ,-,S, duty factor =: 1.8%. MUST NOT be measured on a curve tracer,
2!! COLLECTOR-TO-EMITTER VOLTAGE (VCE'a-4 V

CASE TEMPERATURE ITC!-'·"'c=.'·;,;C.-.n-_r-++H
i 2°J-+-H+J-+-H+J-+-·
;:
I'!!J-+--"l-/+t+-r-++t+-t-->'\H-H
~ 'Of-+-H+J-+-H+J-+-l-[\\l-H
~
~
~ !!J-+-H+J-+-H+r-~-+~~
-I -I.~
BASE-tO-EMITTER VOLTAGE tVSEI-V

~
-0.01
." -0.1 -I
COLLECTOR CURRENT L[C'-A
.. , -10
COlLECTOR CURRENT I'IC1-A 92CS-19see

Fig. 4 - Typical collector-ta-emitter Fig. 5 - Typical transfer characteristics for Fig. 6 - Typical gain-bandwidth product as a
saturation-voltage character- 2N6246, 2N6247, 2N6248. and function of collector current for
2N6246, 2N6247, 2N6248, and 2N6469.
istics for 2N6246, 2N6247, 2N6469.
2N6248. and 2N6469.
--------------------------___________________________________________ 213
POWER TRANSISTORS
2N6246, 2N6247, 2N6248,2N6469,2N6470, 2N6471,2N6472

ELECTRICAL CHARACTERISTICS FOR P·N·P TYPES, At case temperature (TC) : 2!PC unless otherwise specified
TEST CONDITIONS LIMITS TEST CONDITIONS LIMITS

SYMBOL VOLTAGE CURRENT VOLTAGE CURRENT UNITS
2N6469 2N6246 2N6247 2N6248
Vdc Adc Vdc Adc
VCE VBE IC IB Min. Max. Min. Max. VCE VBE IC IB Min. Max. Min. Max.
ICER
(RBEI : lOOn
-35 - -200 - - -75 - -200 - - p.A
-55 - - - -200 -95 - - - -200
ICEX
-45 1.5 - -200 - - -85 1.5 - -200 - - p.A
-65 1.5 - - - -200 -100 1.5 - - - -200
TC;150oC
-45 1.5 - -5 - - -70 1.5 - -5 - - rnA
-55 1.5 - - - -5 -90 1.5 - - - -5
-20 0 -1 - - -40 0 - -1 - - rnA
'CEO - - - -1 -50 0 - - - -1
-30 0
IESO 5 0 - -5 - -5 5 0 - -1 - -1 rnA
-4 _5a - - 20 100
-4 _5 a 20 150 - - -4 _6a 20 100 - -
hFE ·4 . 7a - 20 100 -4 -lOa - -. 5 -
·4 -15a 5 - 5 .. -4 _15a 5 - - -
VCEOlsus) 0.2 0 40b - ·60 b - -0.2 0 -80b - _loob -

V
VCER(suS) -0.2 -SOb - -70b - -0.2 -90 b - -HOb -
VSE
-4 ··15 a - -35 - - -4 _Sa - -1.8 - - V
-4 _7 a - -2 -4 _5a - - - -1.8
··5 a -0.5 - ··1.3 - - _5a -0.5 - - - -1.3
_7 a -0.7 - - -1.3 _Sa -O.S - -1.3 - - V
VCE(sat) _15a -4 - -3.5 - -
-15 a -5 - ·3.5 -
·-15 a ·3 - .- -2.5 -lOa -2 - - - -3.5
Ihlel -4 -1 5 .. 5 - -4 -1 5 - 5 -
I; 2 MHz
hIe -4 -1 25 - 25 - -4 -1 25 - 25 -
I ; 1 kHz
ROJC - 1.4 - 1.4 - 1.4 - 1.4 °CIW

• In accordance with JEDEC registration data format US-6 RDF·2). b CAUTION: CAUTION: Su,r.in;ng tloI,.,.. VCEO"UJ} .nd VCER"u,'
a Pulsed; pulse duration'" 300 ,.,5, duty factor:: 1.8%.

MUST NOT be m...ured on'. cur~ r,.ce,.
I COLLECTOR-TO-EMITTER VOLTAGE (VCEI-4V ~IO]: COLLECTOR-tO-EMITTER VOLTAGE (vC[lo-"V F

II CASE TeMPERATURE (TCI-2S·C
~ ~ j .. ,.......~lll
~ ~ "", 1"~.+-~.+lII+-I---I-J-!-j
~ 10 2, 13:::::::Et~
(f',.....
~ -li~·C (';~
,
I---'"
\ ~ ~hl-
~ ~
a~ 'o.A~~titE=i~=B~~=ttft=i=~~
;~
I ~+-~~~~}+~-+-4-HK-~-+~
oa ,
0.01 '" 6 POI " 6 6 I '" 6 8 10

, -0.01 -0.1 -I
2 '" 6 8
-10
2 of 6.
~IOO
IASE·TO-EMITTER VOLTAGE (VIE I-V COLLECTOR CURRENT lIe I-A

COLLECTOR CURRENT (lei - A ~lCS-22449"1
Fig. 7· Typical gain·bandwidth product as a Fig. 8 . Minimum reverse-bias second-break·

function of collector current for Fig. 9 . Typical de beta characteristics for
2N6470, 2N6471, and 2N6472. down characteristics for all types. 2N6246, 2N6247, and 2N6469.
(Values for p-n·p types are negative).
214 _______________________________________________________________________
______________________________________ ~ _______________ POWERTRANSISTORS
2N6246, 2N6247,2N6248,2N6469, 2N6470, 2N6471, 2N6472

, : COLLECTOR-lO-EMITTER VOLTAGE (VCE""V m-
f ...J..-JCASE TEMPERATURE (TCI·12~·C
.Ii ·,
Q
~
-.. .,;.)
~ '00 ~
~
a ·· ""-
I~
i , i'- ~
eg
-0.1 -\ -10
68
COLLECTOR CURRENT IICI-A nCS"Z,eH

-100
68
'0
, .. , ,
COLLECTOR CURRENT (:1e)-A
. . ~. ,
IASf-YG-EMITTER VOLTAGEtVBf:)-V

Fig. 10 - Typical dc beta characteristics Fig. 11 - Typical dc beta characteristics for 2N6246, 2N6247. and 2N6449.
for 2N6248. 2N6470. 2N6471. and 2N6472.
Sf TEMPERATURE ITe 1·2~·C
BASi:. 'C~AE"T Ile1o-eOO lAA

-"
·.00
•• 0
COU.. ECTOR-TO-EIIIITT[A YOLTAG[(\ICE I-V

SASE-TO-[WlTT[AVOLTAG( (VOEI-V 92C$-224H
BASE-lO-EMITTER .... OLT ... GElvBEl-.... 92CS-,'ST8
Fig. 14 - Typical input characteristics for Fig. 15 - Typical output characteristics for
2N6470. 2N6471. and 2N6472. 2N6246. 2N6247, and 2N6469.
2N6248.
COLLECTOR-lO-EMITTER YOLTAGE (VCE"'W :::! ::::

.:: .::: ." . .::::-r:.:7 ;:::
, I 1.5
BASE-lO-EMITTER VOLTAGE (VBEI-v
COLLECTM-TO-EMITTEFI VOlTAGE: (VeE I-v
'nCS-2Ie48111
Fig. 17 - Typical output characteristics for Fig. 18- Typical transfer characteristics for
2N6470. 2N6471. and 2N6472. 2N6470. 2N6471. and 2N6472.
2N6248.
COLLECTOR CUARENT(IC I - A
COLLECTOR CURRENTIICI-A
Fig. 19 - Typical saturated switching charac- Fig. 20 - Typical saturated switching charac·
teristics for 2N6470. 2N6471. and teristics for 2N6246. 2N6247.
2N6472. 2N6248. and 2N6469.
______________________ ~------------------------------------------------215
POWER TRANSISTORS
2N6249, 2N6250, 2N6251
Features:
450-V, 30-A, 17S-W Silicon N-P-N • High voltage ratings:
Switching Transistors VCBO = 450 V (2N6251)
375 V (2N6250)
For Switching Applications in Industrial and Commercial Equipment 300 V (2N6249)
• High dissipation rating:
PT= 175W
RCA-2N6269, 2N6250 and 2N625.1 are these transistors especially suitable for off-
multiple epitaxial silicon n-p-n power tran- line inverters, switching regulators motor • Maximum safe-area-of-
sistors utilizing a multiple-emitter-site sfruc- controls, and deflection circuit applications. operation curves
ture. Multiple-epitaxial construction maxi-
The high gain and high ES/b energy-handling
mizes the volt-ampere characteristic of the
capability of the 2N6249 make it an excel·
device and provides fast switching speeds.
lent choice for motor-control applications
Multiple-emitter-site design assures uniform TERMINAL DESIGNATIONS
in which large winding inductances are en-
current flow throughout the structure, which
countered and high surge currents are re-
produces a high IS/b and a large safe-oper-
quired to start the motor.
ation area.
The high breakdown voltages, low saturation
These devices use the popular JEDEC TO·31
voltages, and fast-switching capability of the
TO-2D4MA package; they differ mainly in
2N6250 and 2N6251 make them especially
voltage ratings, leakage-current limits, and
suitable for inverter circuits operating di-
VCE(sat) ratings.
rectly off the rectified 115-V power line or a
The exceptional second-breakdown capabili- bridge configuration operating from the
ties and high voltage-breakdown ratings make rectified 220-V line. JEDEC T03/TO-204MA
(See dlmens/onsl outline "A "-J
MAXIMUM RATINGS,Absolute-Maximum Values: 2N6249 2N625D 2N6251
* Vcso· 300 375 .450 V
•
VCEO(,u,1
VCEX(,u,1 (V SE = 0 VI
200
225
275
300
350
375
V
V .
•
VCER(,u,1 (RSEI"; 50 n
VESO·
225
6
300
6
375
6
V
V ·t .
I
*
•
IC·
ICM
IS .
10
30
10
10
30
10
10
30
10
A
A
A
·
~
f
r-~
100
E 1-.;I
>-
~ "'....,.".t
* PT i :i "J k...."
At T C up to 25: C and V CE up to 30 V 175 175 175 W
·: . ~1\ tI\K
~
~
*
At TC up to 25 C and VCE above 30 V
TJ+Tstg ·
Derate linearly at 1
_ _ _ -65 to +200 __ °c
°C/W
) IN
. . . 10 , . .. , , ..,,.
I'-
* TL
230 _ _ _
At distances~ 1/32 in. (0.8 mm) from case for 105 max .. °c
Fig_ 1 - Thermal-cycle rating chart for
• 2N-Series types in accordance with JEDEC registration data format (JS·6, RDF-l). al/ types.
eoc.UCTo..-TO-IIlITTE. VOLT.... IE
~
I
, eVeEI ·lY
§
~ ...
,L II.. !i~
Ii
c'
110·t
I~
20:5
8a i . ",J TI"."""""
ITCI0215,,(;
lO!g
c.
~! I.---t"" to~!
; I ""i' ~
~ l ..., . ... . ° I::.:::::"

~
",'
COLLECTOR CURRENT Lle)-A COLLECTOR CURRE"IT (IC I-A

COLLIECTOft CUJtItfNT IICI-"
Fig. 2 - Typical normalized de beta char- Fig. 3 - Typical base-to-emitter saturation Fig. 4 - Typical collector·to~mitter
acteristics for a/l types. voltage characterist;cs for all types. saturation voltage charac-
teristics for all types.
216 ________________________________________________________________________
2N6249, 2N6250, 2N6251
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc! = 25"C Unless Otherwise Specified

TEST
LIMITS
CONDITIONS
U
DC DC N
CHARAC·
TE,RISTIC
iVAGE
OLT CUR·
RENT
I
T
(V) (A) 2N6249 2N6250 2N6251 S
VCE IC 18 MIN. TYP. MAX. MIN. TYP. MAX- MIN. TYP MAX-
150 0 - - 5 - - - - - -
ICEO 225 0 - - - - - 5 - - - BASE-TO-EUITTERVOLTAGE { .... BEI-v
300 0 - - - - - - - - 5
9ZCS-19411

225 - - 5 - - - - - - for all types.
* ICEV 300 - - - - - 5 - - - rnA
VBE=-1.5 375 - - - - - - - - 5
* ICEV 225 - - 10 - - - - - -
VBE=-1.5 300 - - - - - 10 - - -
TC= 125°C 375 - - - - - - - - 10
* lEBO - - 1 - - 1 - - 1 rnA
VBE=-6
* VCEO(sus) 0.2 200 b - - 275 b - - 350 b - - V
VCER(sus)
0.2 225 b - - 300 b - - 375 b - - V
RBE=50n
* VEBO 6 - - 6 - - 6 - - V
IE= 1 rnA
3 lOa 10 - 50 - - - - - - all types.
3 lOa - - - 8 - 50 - - -
* hFE 3 loa - - - - - - 6 - 50
TRANSISTOR SHOULD BE OPERATED WITtll1'i THE

loa 1 - - 2.25 - - - - - - lIIol150fTH[CURVESHQ'II'NINFIGI
lOa 1.25 - - - - - 2.25 - - -

* VBE(sat) lOa 1.67 - - - - - - - - 2.25
V
loa 1 - - 1.5 - - - - - I -
lOa 1.25 - - - - - 1.5 - - -
* VCE(sat) I
V
lOa 1.67 - - - - - - -
-I 1.5
o,,~_
* Ihle l 10 1 2.5 8 - 2.5 B - 2.5 81 -

f= 1 MHz
* ISlo 30 5.8 - - 5.B - - 5.8 - - A Fig. 7 - Typical thermal response characteristics

tp = 1s nonrep.
for all types.
* ES/o VBE -4
RB=50n, 10c 2.5 - - 2.5 - - 2.5 - - rnJ
L= 5Oj.LH
tr 10 1 - 0.8 2 - - - - - -
VCC=200V, 10 1.25 - - - - 0.8 2 - - -
IB1=-IB2 10 1.67 - - - - - - - 0.8 2
* ts 10 1 - 1.B 3.5 - - - - - -
VCC=200V, 10 1.25 - - - - 1.8 3.5 - - - j.Ls
IB1=-IB2 10 1.67 - - - - - - - 1.B 3.5
* tf 10 1 - 0.5 1 - - - - - -
VCC=200V, 10 1.25 - - - - 0.5 1 - - -
IBl =-IB2 10 1.67 - - - - - - - 0.5 1
ROJC 10 5 - - 1 - - 1 °C/W
1 - - COLLECTOR CURRENT CICI-A
• 2N-Senes types In accordance with JEDEC registration data format IJS-6 RDF-1L
a Pulsed; pulse duration ~300 itS, duty factor := 2%. Fig. 8 - Typical rise-time characteristics for
b CAUTION: The sustaining voltages VCEO(sus) and VCER(sus) MUST NOT be measured on a curve tracer. all types.
__________________________________________________________________________ 217
POWER TRANSISTORS
2N6249,2N6250,2N6251
_ CASE TEMPERATURE ITC )a2S-C
H-- =-t=t=t-JH+-+- --4- ' _ . '
-:-i-T- -.
PULSE OPERATION.' !
COLLECTOR CURRENT tIC I-A

UtS-I.4UII,
Fig. 1 1 - Typical storage-time characteristics

for all types (with constant forced
gain).
6 8 10 6 8100 6 81000
COLLECTOR-TO-EMITTER VOLTAGE (VCEI- v
92CS-19468
Fig. 9 - Maximum operating areas for all types at T C = 25°C. COLLECTOR CURRENT ItCI-.
Fig. 12 - Typical storage-time characteristics

for all types (with constant base
drive).
C:OLLECTORCURREltT IIC I - A t2tS-"".liilll
Fig. 13 - Typical fall-time characteristic for

a/l typ."
I!. '
+~II-H+f-H VCEO MAX.-200 v ' ' Ifl.+!
l ::::,:l-H,
12N6249 il-,-c--to '!-++H-1H
-- ,. ,.+. -. VCEO MAX.- 275 V 12N6250) ~=+::t:+1~lt1tl:t1
2 ---,: _L~,
I ' t-
I - VCEOMAX.- 350 V 12N6251 I I - ~~~·tttm
0.01 . - i 1~ I' . Ir-lr Trl-rnTI - t
6 8 10 2 6 8 100
• "000 COlUCTOI'I CURRENT Ite I-A .IU-I .....1tI
COLLECTOR-TO-EMITTER vOLTAGE IVCEI-V 92CS-19469
Fig. 14 - Typical inductive- and res;st;ve--load
Fig. 10 - Maximum oparatingareas fora/l typ.. at Tc= 100°C. fall-t;mscharacter;st;cs forall types.
218 ________________________________________________________________
2N628~ 2N628~ 2N628~ 2N628~ 2N6286, 2N6287

20-Ampere Complementary N-P-N and P-N-P Monolithic
Darlington Power Transistors
60,80-100 Volts, 160 Watts Features:
Gain of 2400 (Typ.) at 10 A (2N6282, 2N6283, 2N6284) • Operates from IC without predriver
• High reverse second·breakdown capability
• Monolithic construction
The RCA-2NS282, 2N6283, and 2N6284 and
VCEO(sus) = SO V Min. - 2NS282, 2NS28S·
the 2NS28S, 2NS286, and 2NS287 are
= 80 V Min. - 2NS283, 2NS28S-
complementary n-p-n and p-n·p monolithic
silicon Darlington transistors designed for = 100 V Min. - 2NS284, 2NS287-
general-purpose amplifier and low·speed
switching applications. The high gain of Applications:
these devices makes it possible for them to • Power switching
be driven directly from integrated circuits. • Hammer drivers
These devices are supplied in the JEDEC • Series and shunt regulators
TO-3 hermetic sfeel package. • Audio amplifiers
MAXIMUM RATINGS, Absolute·Maximum Values:

2NS282 2NS283 2NS284
2NS285° 2NS28So 2NS287°
• V CBO ' 60 80 100 V

• VCEO(sus) 60 80 100 V TERMINAL DESIGNATIONS
• v EBO · 5 5 5 V
• IC' 20 20 2tl A
• ICM
40 40 40 A
• lB' 0.5 0.5 0.5 A
• PT
TC <;;25°C 160 160 160 W
>
T c 2SoC Derate linearly 0.915 W/oc
• Tstg, TJ . . _______ -6510200 °c
• TL
At distances ~ 1/16 in. (1.58 mm) from case for 10s max. 235 °c JEDEC TO-3
* In accordance with JEDEC registration data . (See dimensional outline UAU)

.
.L
<-
17~
,--------:-----, ~
I I 1-----------, :;
150
I I I I ~ 125
I
II I
I
I
I I
o
~KlO
~
I I ~ 15
I I I I
IL _~_ n _ _~.on
••_ _ _ _ _ ...J
I I ~ •• n ~.on I i~
L _________ ...J
~ 25
o
o • 00 n ~ ~ _ ~
CASE TEMPERATURE (T C )_·C

=
92CS-29129
92CS-29128
Fig. 1 - Schematic diagram for 2N6282, 2N6283, Fig. 2 - Schematic diagram for 2N6285, 2N6286, F;g. 3 - Power derating curve for all types.
and2N6284. and2N6287.
_____________________________________________________________________ 219
POWER TRANSISTORS
2N6282, 2N6283,2N6284,2N6285,2N6286, 2N6287

ELECTRICAL CHARACTERISTICS, at Case Temperature (TCJ = 25"C Unless Otherwise Specified

VOLTAGE CURREN 2N6282 2N6283 2N6284
CHARACTERISTIC Vdc Adc 2N6285- 2N6286- 2N6287- UNITS
30 0 - 1 - - - -
* ICEO 40 0 - - - 1 - -
50 0 - - - - - 1 rnA
60 -1.5 - 0.5 - - - -
* ICEX 80 -1.5 - - - 0.5 - -
100 -1.5 - - - - - 0.5
60 -1.5 - 5 - - - -
TC= 150°C 80 -1.5 - - - 5 - -
100 -1.5 - - - - - 5
* lEBO -5 0 - 2 - 2 - 2 rnA
* VCEO(sus) O.la 0 60 - 80 - 100 - V
3 20a 100 -. 100 - 100 -

* hFE
3 loa 750 18,000 750 18,000 750 18,000
20a 0.2 - 3 - 3 - 3
* VCE(sat)
loa 0.04 - 2 - 2 - 2
V
* VBE 3 loa - 2.8 - 2.8 - 2.8 V
* VBE(sat) 20a 0.2 - 4 - 4 - 4 V
hie -
1= 1 kHz
3 10 300 - 300 300 -
* Ihle l
3 10 4 - 4 - 4 -
1=1 MHz
* Cob
VCB=10V,IEO,
1=0.1 MHz
2N6282-84 - 400 - 400 - 400
pF
2N6285-87 - 600 - 600 - 600
IS/b
t = 1 s, non rep_
30 5.3 - 5.3 - 5.3 - A
ROJC 1.09 - 1.09 - 1.09 °CIW
a Pulsed: Pulse duration = 300 fJS, duty factor = 1.8%.

~''''. COLLECTOR-rO-EMITTER VOLTAGE IVCE,-3V
~ :
~ 2
L
I
~
Z
~
E
.
10 4
•
4
=~.c
V ~,.;y
~ 2 -r-:~.c"...
~ 103
o
;
•
8
r-""" , l~
./
~ 4
u
0,<1-
2
0.'
t 4 ..,
2 4
10
..
COLLECTOR CURRENT(tcl-A
2 4
eZCS-I.IU
.. 100 -0.1 4 6 8_ 1 2 4 68_ 10
COLLECTOR CURRENT(I C I-A
2 4 6 I!IOO
Fig. 4 - T)opical de beta characteristics for Fig. 5 - Typical de beta characteristics for
2N6282, 2N6283. and 2N6284. 2N6285, 2N6286. and 2N6287.
220 ____________________________________________________________________
2N6282,2N6283, 2N6284, 2N6285, 2N6286, 2N6287
COLLECTOR- TO-EMITTER SATURATION VOLTAGE

[vCEhaIJ]-V
FOR ,-"-p DEVICES,VOLTAGE AND CURRENT VALUES ARE NEGATIVE
92CS-29135
Fig. 7 - Typical saturation characteristics for all types.
COLLECTOR-TO-EMITTER VOLTAGE 'VcE)-Y
-FOR p- n -p DEVICES, VOLTAGE AND CURRENT VALUES ARE NEGATIVE
Fig. 6 - Maximum operating areas for a/l types.
···1 COLLECTOR SUPPLY VOLTAGE Vcc. -30\1

CASE TEMPERATURE (Te '" 2~'C
I • COLLECTOR SUPPLYVOLTAGE(VCCI-30V
. ·, '"
Ielle '250
.Is. "IS2 III
;:: ~ br·,1
~
! -I I"
I
"r~
0
z ·· l" ~
-....
~
·,
I,
~
~
td AT \/eE (OFF)-OV
i
-0.1
-0.1
, . " ~ . "l , .L
·10 -100
COL.LECTOR CURRENT (Ie )-A
Fig. 8 - Typical switching times for 2N6285, Fig. 9 - Typical switching times for 2N6282,
2N6286, and 2N6287. 2N6283, and 2N6284.
_____________________________________________________________________ 221
2N6306-2N6308, RCS579
High-Voltage, High-Current Silicon N-P-N Features:
• Fast Switching Speed
Power-Switching Transistors • High Voltage Ratings:
VCER =350 V to 450 V
For Off-Line Power Supplies and Other High-Voltage Switching Applications • High Gain at IC =3 A
• Thermal·Cycling Rating Chart
The RCA-2N6306, 2N6307, 2N6308, and gether with the high gain, low saturation
RCS579 are epitaxial silicon n·p·n power voltage and fast-switching capability of Applications:
transistors with pi·nu construction. They this series of devices, make them parti·
• Off-Line Power Supplies
are hermetically sealed in a steel JEOEC cularly suitable for inverter circuits
TO·3 package, and differ mainly in volt- • High-Voltage Inverters
operating directly off the rectified 120·
age ratings, saturation voltage, and beta • Switching Regulators
volt power line or in a bridge configura·
characteristics. The exceptional second· • Motor Controls
tion operating from the rectified 240·volt
breakdown and high voltage ratings, to· line. TERMINAL DESIGNATIONS
'~
MAXIMUM RATINGS, Abwlute-Maximum Values: RCS579 2N6306 2N6307 2N6308
• VCBO • . . . . . . . • . . . . . . . • • . . . . . . . . . . • . 500 500 600 700 V
•
•
VCER{suI) .
RBE=50Sl . . • • . . • . . • . • . • . . . . . . . • • . •
VCEO{SUS) • . . . . . . . . • . . . . . • . . . . . • . . . . . .
vEBO . . • . . • . . . • . . . . . . . • . . • . . . . • . . . •
• IC····················.· ...•.....•.
400
250
6
B
350
250
8
B
400
300
B
8
450
350
8
8
V
A
V
V _. JEDEC TO-3
• ICM·········.·· . . . • . . . • . . . . . • • . • . • • 16 16 16 16 A (S.. dlm.nllon.1 outline "A".)
• lB···········.···.·· •..•.....•.•.•. 4 4 4 4 A
• PT
TC up to 25·C . . . . . • . . • . . . . . . • . . . . . . . 125 125 125 125 W
T C above 25°C . . . . . . . . • . . . . . . • . . . . • • . - - - - Darate linaarlv to 2oo·C - -
• Tstg• TJ . . • . . . . . . . . . . . . . . . • . . • • . . . . . . -65 to +200 ·C
100
• TL .
At distance;;' 1116 in. (1.58 mm) from
seating plane for 10 s max. • . • . . . • . . . . . • . . . - - - - - - 2 3 5 - - - - - ·C
'2N-Series types In accordance with JEDEC registration data forinat (JS-6 RDF·l)
NURER OF THERMAL CYCLES
Fig. 2 - Thermal·cycling rating chart for

all types.
luu, COLL~rOR-~EMILTEIR VOLTAGE IVCEI-. V

c-
I :~EMPER.~UR~
.. 2
"O"'~ 1"1-
IT!I!2 • .., ~
5; ...... f0
..
·55-
!e
ui lO I
~
iIl
. ..,
2
!!
10 100
I
0., 2
z . ., '0
Fig. 1· Maximum operating areas for 2N6306-2N630B. Fig. 3 - Typical de beta characteristics for
all types.
222 __________________~------__--------------------------------------
--__________________________________________________________ POWERTRANSISTORS
2N6306-2N6308, RCS579
ELECTRICAL CHARACTERISTICS. TC' 25°C Unless Otherwise Specified.

CHARACTERISITC VOLTAGE CURRENT 2N6306 2N6307 2N6308 RCS579 UNITS
V de A de
VCE VSE IC IS MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
250 0 - 0.5 - - - - - 0.5
- ICEO 300 0 - - - 0.5 - - - -
350 0 - - - - - 0.5 - -
500 -1.5 - 0.5 - - - - - 0.5
- ICEV 600 -1.5 - - - 0.5 - - - - rnA
700 -1.5 - - - - - 0.5 - -
450 -1.5 - 2.5 - - - - - 2.5
- TC ~ 150°C 550 -1.5 - - - 2.5 - - - -
650 -1.5 - - - - - 2.5 - -
- lEBO -6 0 - - - - - - - 2 rnA
-8 0 - 1 - 1 - 1 - -
- VCEolsus) O.la 0 250 - 300 - 350 - 250 - V
VCERlsus)
RBR ~ 50 n O.lb 350 - 400 - 450 - 400 - V
VEBO
IE ~ 1 rnA 0 - - - - - - 6 - V
- hFE 5 3a 15 75 15 75 12 60 12 -
5 8a 4 - 4 - 3 - 3 -
-li BE 5 3a - 1.3 - 1.3 - 1.5 - 1.5 V
- VBElsat) 8a 2 - 2.3 - 2.3 - - - - V
8a 2.67 - - - - - 2.5 - 2.5
3a 0.6 - 0.8 - 1 - 1.5 - 1.5
!t VCE(sat) 8a 2 - 5 - 5 - - - - V
8a 2.67 - - - - - 5 - 5
- Ihle l 10 0.3 5 - 5 - 5 - 5 -
- I ~ 1 MHz
• ES/b -1.5 3 180 - 180 - 180 - 180 - rnJ

L = 40 mH
RBB ~ 3kn
ISlb
tp = 1 5, nonrep. 40 3.15 - 3.15 - 3.15 - 3.15 . - A
* Cabo
VCB~10V. - 250 - 250 - 250 - 250 pF
1= 0.1 MHz
· r
VCC~125V 3 0.6 - 0.6 - 0.6 - 0.6 - 0.6
• ts
VCC~ 125V
tp ~ 25f.lS 3 +0.6 - 1.6 - 1.6 - 1.6 - 2
-1.5 f.lS
tp ~ 5f.lS +0.6 - 0.8 - 0.8 - 0.8 - -
3 -1.5
• tl
+0.6 - 0.4 - 0.4 - 0.4 - 0.4
VCC~125V 3 -1.5
ReJC - 1.4 - 1.4 - 1.4 - 1.4 °C/W
* 2N-Series types in accordance with JEOEC registration data famat (JS-6, RDF·l).
a Pulsed; pulse duration = 300 J.,ls. duty factor~ 2%.
b CAUTION: The sustaining voltage VCEO(SUS) and VeER (sus) MUST NOT be measured on a curve tracer. VCEO(SUS) should
be measured by the pulse method (Note "a"L
________________________________________________________________________ 223
POWER TRANSISTORS
2N6306-2N6308, RCS579
COllECTOR CURRENT (IC)-A
Fig. 5· Typical collector-to-emitter

saturation-voltage character-
istics for all types.
92(5-26522
Fig. 4 - Maximum operating areas for RC$579.
10
01 2: 468 1 2 .. 68 ro 2: 468100 2 46BrOoo
COLLECTOR-la-BASE VOLTAGE (Vca)-V
Fig. 6 - Typical output capacitance for

all types.
COLL.ECTOR SUPPLY VOLTAGE (Vcc,.r25 y

CASE TEMPERATURE {TC)'2!5'C
10 PULSE DURATION' 25,..
8 DUTY CYCLE-I".
-;, 6 tar'Ie/5. -IB2'Ic / 2
I 4
:!l .............
2
~
2
........... i----.!!.
!i1
~
~
~
I
.
4
8
I, I-"
2
l.-- ~ It
0.1
K I.
I 2 3 4
COLLECTOR CURRENT IIcl-A
5
•
!2tS-H521
Fig. 7 - Typical output characteristics for Fig. 8 - Typical saturated-switching-time Fig. 9 - Typical transfer characteristics
all types. characteristics for all types. for all types.
224 _____________________________________________________________________
POWER TRANSISTORS
2N6326, 2N6327
High-Current, High-Power,High-Speed N-P-N Feature~:
• Specification for.hFE and VCE(satl up to 30 A
Power Transistors • Current gain bandwidth product
fT = 3 MHz (min.) at , A
The RCA-2N6326 and 2N6327 are epitaxial- regulators, dc-to-dc converters, inverters, and • Low saturation voltage with high beta
base silicon n-p-n transistors intended for a solenoid (hammerl/relay drivers_ • High dissipation capability
wide variety of high-power, high-current These devices differ .in maximum voltage • 200 mJ ES/b characteristic
applications, such as power-switching circuits, ratings. They are supplied in JEDEC TO-
driver and output stages for series and shunt 204MA hermetic steel packages.

2N6326 2N6327
*Vcso . . 60 80 v
* v CEol,us) . 60 80 V
*V EBO 5 V
·IC . ----30---- A
*ICM -----~---- A
• IS . ----10---- A
ISM ----15---- A
·PT
At TC .;;; 25°C - - - - 200 - - - - w JEDEC TO-204MA
AtTC > 25°C Derate linearly - - - - - 1.15 - - - - wt"c (500 dlmon.lonol outline "A".)
See Figs. 1 and 2
- - - - -65 to 200 - - - -
At distance;;' 1/32 in. 10.S mm) from

seating plane for 10. max. - - - - 230 - - - - -
* In accordance with JEDEC registration data format JS-6 flDF-2.
CASE 1EMPERA~E ITc)--C
Fig. 2 - Derating curI/fJ6 for 2N6326 and 2N6327.
.;,:"",: COLLECTOR·TO-EMITTER YOLTAGE (YCE)-. Y -
! · ""r ~,,-H-HI-+-+-+-H
~ z r.·C ,,·~tHI+--I-+-HH-I
:IOO~ ~ u<tl'r!
i : -:l5·C- C4~,~:j:;:--=j::::j::j:j
~ ........ -... I ' .c-I-
••• 241' .1.

D.' I 10 100
COLLECTOR CURRENT (~c I-A
COLLECTOR-·TO- EMITTER VOLTAGE! VCEI-V tZU-29M3
92CS-29845
Fig. 3 _ Typical dc b.ta characteri.tic. as a func-
tion of collector currant for 2N6326 and
Fig. , - Maximum operating a/"ell' for 2N632§ and 2N6327. 2N6327.
----------------------_____________________________________________ 225
POWER TRANSISTORS
2N6326, 2N6327
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC' =2fiOc I 8 COLLECTOR SUPPLY VOLTAGE (\~x:).30V
Unless Otherwise Specified . IclIa"1O

6 CASE TEMPERATURE (TC)o25"C ,
CHARAC-
TEST CONDITIONS
VOLTAGE CURRENT
LIMITS
~
~ ·, " I-
r---
TERISTIC Vdc Adc
2N6326 2N6327 UNITS ~
II!
·,
VCE VBE IC IB Min. Max. Min. Max_ a: 0.1
g
· ICES
60
80
-
-
0.5
-
-
-
-
0.5
~
~
·, --- I,
· ICES 30 - 5 - -
;:
~
~
·
·
TC=150o C
ICEO
40
30
40
-
-
-
-
1
-
-
-
-
5
-
1
rnA 0.01
, .,. 10
COLLECTOR CURRENT IIC)-A
, . . , 100
· lEBO
4
-5
5a
-
25
0.5
-
-
25
0.5
-
Fig. 4 - Typical delay-time and rise-time
· hFE 4
4
15a
30a
12
6
-
30
12
6
-
30
characteristics as B function of
collector current for 2N6326
and2N6327.
· VCEO(sus) 0.03 60 - 80 -
· VBE
4
4
15 a
30a
-
-
2
4
-
-
2
4
V
· VCE(sat)
15a
30a
2
7.5
-
-
1.5
3
-
-
1.5
3
ISlb
tp = 1 s
nonrep.
20 10 - 10 - A
1
';.
I
·
4
COLLECTOR SUPPLY VOLTAGE IVccl-:SOV
lB. "-J:B2
6 IetIS"IO
CASE TEMPERATUflE 1Tc)oZ5"C
ES/b
- -
f,
I r---
L= 125J.1H. -1.5 10 6.25 6.25
RSE=51n
L-20rnH,
RSE=100n
* Ihfel
f = 1 MHz
10
0 4.47
1
200
3
-
-
200
j
-
-
rnJ i5
E
!II;:
~
I
·,
~
:~ t--!.!.
-
"' ~
* hfe
f = 1 kHz
10 1 30 - 30 -
0.1
, . .. 10
, . .. 100
ton VCC= 15 2 0.45 (Typ.) 0.45 (Typ.)

2b J.lS
toff 30 15 0.9 (Typ.) 0;9 (Typ.) Fig. 5 - Tvpical storage·time and fall-time
20 5 - 0.875 - 0.875 oCIW characteristics as a function of
ROJC
collector current for 2N6326
*In accordance with JEDEC registration data format JS-6 RDF-2. and2N6327.
apulsed; pulse duration = 300 "s. duty factor = 1.8%.
biB =-IB .
1 2
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [VCEbotl]-V

BASE-TO-EMITTER VOLTAGE IVSE1-V
Fig. 6 - Typical transfer characteristics for Fig. 7 -, Typical saturation voltage characteristics for
2N6326 and 2N6327. for 2N6326 and 2N6327.
226--__________________ ~ ________________ ~ _____________________________

________________________________________________ ~ ________ POWERTRANSISTORS
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001

8- and 10-Ampere N-P-N Darlington Power Transistors
For Use as Output Devices in Switching and Amplifier Applications Features:
40-60-80 Volts, 90-100 Watts
• Operation from Ie without predriver
• Low leakage at high temperature
The ReA devices are monolithic n-p-n r - - - - - - - ----,
I I • High reverse-second-breakdown cap-
silicon Darlington transistors designed
I I ability
for low- and medium-frequency power I I
applications_ The double epitaxial con- : I
struction of these devices provides good 1 1 Applications:
1 I
forward and reverse second-breakdown L _ _ _ _ _ _ _ _ _ .J • Power switching
capability; their high gain makes it pos- • Audio amplifiers
sible for them to be driven directly from Schematic diagram for • Series and shunt regulators
integrated circuits_ all types_ • Hammer drivers
MAXIMUM RATINGS, Absolute-Maximum Values: TERMINAL DESIGNATIONS

2N6385 2N6384 2N6383 2N6055 2N6056 RCA 1000 RCA 1001
'VCBO 80 60 40 60 BO 60 80 v
VCER(sUS)
RBE" lOOn - - 80 60 40 60 80 V
"VCEO(SUS) . . . . . . . • . . . , BO 60 40 60 80 60 80 V
VCEV(sus)
V8E"-1.5V . . . . . . . 60 80 v
'VCEX
V8E" -1.5 V, RBB "lOOn. 80 60 40 v JEDEC TO-204MA
·VEBO· 5 V
(See dimensional outline "An.)
"'Ie· 10 10 10 8 A
ICM· . 15 15 15 16 16 15 15 A
"'18 ... 0.25 0.25 0.25 0.12 0.12 0.1 0.1 A
'PT
TC ~25°C. ......... , . 100 100 100 100 100 90 90 W
Tc >25°C Derate linearly to 200°C
"T stg • TJ. -65 to +200 °c
'TL
At distance ~ 1/32 in. 10,8 mm) from
seating plane for 10 s max . .... . 235 °c
*2N-Series types in accordance with JEDEC registration data format JS-6 RDF-2.
1
'"
15
• '~ Af 0 ;l~:: i
~ 10
1'\ ,J" ;
:.fu; .. - ....
I
u
H •
~
z • i>~ .. .J.
~i
rc~
~I • , ITE
~! •
~i •
J
, . I':
M x.
li'"
, E N' .1 6 "8 II m'L
0.'
10 100
COLLECTOR-lO-EMITTER VOLTAGE {VCEJ-V
92CS-20692Rt
"
-.. M' .,
.. ...
10
:1:':
~,~.
COLLECTOR-TO-EMITTER VOLTAGE (VC.II-V

. .. _
. ..
L
Mea-t•• URI
0
Fig. 1 - Maximum operating area for 2N6383-2N6385. Fig. 2 - Maximum operating area for 2N6383 - 2N6385 at T C = 100 C.
__________________________________________________________________ 227
POWER TRANSISTORS
2N6383-2N6385, 2N6055, 2N6056, RCA10,OO, RCA1001

ELECTRICAL CHARACTERISTICS. At Case Temperature. TC = 25°C Unless Utherwise Specified

Vdc Adc 2N6385 2N6384 2N6383 UNITS
VCE VEB VBE IC 18 MIN. MAX. MIN. MAX. MIN. MAX.
80 0 - 1 - - - -
• ICED 60 0 - - - 1 - -
40 0 - - - - - 1
80 -1.5 - 0.3 - - - -
60 -1.5 - - - 0.3 - -
• ICEV 40 -1.5 - - - - - 0.3 rnA
80 -1.5 - 3 - - - -
-
TC = 150°C 60 -1.5 - - - 3 - -
40 -1.5 - - - - - 3
• lEBO 5 a - 5 - 5 - 5 rnA
• VCEO(sus) 0.2a 0 80 - 60 - 40 -
• VCER(sus)
RBE = 100.Q 0.2a 80 - 60 - 40 - V
VCEV(sus) -1.5 0.2a 80 - 60 - 40 -
• hFE 3 !?a 1000 20.000 1000 20,000 1000 20.000
3 loa 100 - 100 - 100 -
• VBE 3 5" - 2.8 - 2.8 - 2.8 V
3 10" - 4.5 - 4.5 - 4.5
• VCE(sa!) 5a O.Ol a - 2 - 2 - 2 V
loa 0.1" - 3 - 3 - 3
VF -10 - 4 - 4 - 4
• hIe
1=1 kHz 5 1 000 - 1000 - 1000 -
• Ihlel
1= 1 MHz 5 1 20 - 20 - 20 -
• Cobo VCB IE=O - 200 - 200 - 200 pF
1=1 MHz = 10
ISlb 75 0.22 - - - - -
t = 1 s, 55 - - 0.55 - - - A
non rep. 30 3.33 - 3.33 - 3.33 -
~OJC - 1.75 - 1.75 - 1.75 °e/W
a Pulsed: Pulse duration = 300 /JS. duty factor = 1.8% .

• 2N·Series types in accordance with JEDEC registralion data format JS-6 RDF·2.
•·
100 r---
• ·
100 COLLECTOR-fO-EMITTER VOI.TAGE !VeEI- 3\1
I
f· 1 · III I
:·
i\ !'.... !
· \ ' " CASE-TEMPERATURE CHANGE
~ z 16fC ) .5O·C
"-
CASE-TEMPERATURE
'<- l"-
0
~
~
CHANGE (4TC I- 50·C
-
-~
..
~
e
- \ t< a
.·
e ~
1\
~ - 1\ '\ !'.... \
. . ..l~ilc'\r. .I'ri.. "". ."..

~ \.
. .':g'.<rfc'\.r ...
!tiC "-~ i "- 1\\ ,
'0
, 10
c

10 5
. .. 10'
'tO~
10"
105 10'
468 I .. 110
COLLECTOR CURRENT [lei-A
Fig. 3· Thermal·cycling rating chart for Fig. 4· Thermal·cycling rating chart for Fig. 5· Typical dc beta characteristics
2N6055-2N605~2N6383- RCA 1000, RCA 1001. for al/ types.
2N6385.
228--------------------------------------------------------------------
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001

ELECTRICAL CHARACTERISTICS, At Case Temperature, TC = 25"C Unless Otherwise Specified
DC DC
CHARACTERISTIC VOLTAGE CURRENT 2N6055 2N6056 RCA1000 RCA1001 J,JNITS
v A
VCE VEB ~BE IC IE IB MIN. MAX. MIN. ~AX. MIN. MAX. MIN. ~AX.
30 0 - 0.5 - - - 0.5 - -
ICED rnA
40 () - - - 0.5 - - - 0.5
ICER 60 - - - - - 1 - ~
RBE = 1 kn 80 - - - - - - - 1
ICER SO - - - - - 5 - - rnA
RBE= 1 kn 80 - - - - - - - 5
TC = 150°C
SO 1.5 - 0.5 - - - - - - rnA
ICEX
80 1.5 - - - 0.5 - - - -
ICEX SO 1.5 - 5 - - - - - -
TC = 150°C SO 1.5 - - - 5 - - - -
"lEBO 5 0 - 2 - 2 - 2 - 2 rnA
3 Ba 100 - 100 - - - - -
" hFE 3 4a 750 lS.000 750 lS.000 750 - 750 -
3 3a - - - - 1000 - 1000 -
VIBR)CEO O.la 0 - - - - SO - SO - V
VCEolsus) O.la Soa - SO" - - - - -

~~~~ ~'b'J!l O.la SO" - SO" - - - - - V
VCExlsus) 1.5 O.la 60" - BO" - - - - -

3a 0.012 - - - - - 2 - 2
* VCE(sat) 4a 0,016 - 2 - 2 - - - - V
Ba 0.04 - - - - - 4 - 4
sa O.OB - 3 - 3 - - - -
3 3a - - - - - 2.5 - 2.5
" VBE
3 4a - 2.8 - 2.B - - - - V
VBElsat) Ba O.OB - 4 - 4 - - - -
" Ihfe l
1= 1 MHz
3 3 4 - 4 - - -
.- -
* Cabo
1= 0.1 MHz. 0 - 200 - 200 - - - - pF
VCB = 10V
" hie
f = 1 kHz
3 3 300 - 300 - - - - -
ISlb 3 - 3 - - - - -
33.3 A
t"'15,
non rep.
40 - - 2 - - - - -
R8JC - 1.75 - 1.75 - 1.94 - 1.94 °C/W
* In accordance with JEDEC registration data format JS-6 RDF·2. a Pulsed: Pulse duration = 300~. duty factor = 2%
CURRENT Ut'-' A
COLLECTOR-lO-EMITTER VOLTAGE (VCE'- ]Vm COl.l.ECTOR-TO:OIm[fI VOt.TAGE IVcE'-S
'-"- CASE TEMPERATURE ITClo2SoC
"
i · \
4 6 8 0 .1
1\
0.01
FREQUENCYUI-MHI
BA$[-TO-EMITTER VOLTAGE {VaEI-V COlUCTOR-TO-[M'TTER VOLTAGE ("'eEI-V
WC$.199Z5
Fig. 6 - Typical input characteristics Fig. 7 - Typical output characteristics Fig. 8 - Typical small-signal gain for
for 2N6383-2N6385, 2N6055, for 2N6383-2N6385, 2N6055, all types.
2N6056. 2N6056.
________________________________________________________________________ 229
POWER TRANSISTORS
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001

COLLECTOR-TO-EMITTEA VOLTAGE (VCE). 3V
~
8
. Ie 1111 tfOftCED hFE)oIOOO
TC·I5O• C
COLLECTOR CURRENT (XC}-A

0123~5678
COLLECTOR-TO-EMITTEft SATURATION VOLTAGE [VCE Ilotl]-V
92CS-fOI56
, , .
BASE-lO-EMITTER VOLTAGE (YSEI-V
Fig. 9· Typical saturation charac· Fig. 10 - Typical saturation characteristics Fig. 11 - Typical transfer characteristics
teristics for 2N6055, 2N6056, for 2N6383-2N6385. for 2N6383-2N6385, 2N6055,
RCA 1000, RCA 1001. 2N6056.
--
COLLECTOR SUPPLY VOLTAGE tVcc'"20 II
'~
IS • -lft"Ie/SOO, TC'ZS"C 6~C MAX. (CONTINUOUS) ~ DISSIPATION-LIMITED
,Ilk"""
8.tlO
COLLECTOR CURRENT Il cl-A I 2 '" 6810 2346'\00
COLLECTOR-fO-EMITTER VOLTAGE tVeEI-V
Fig. 12· Typical saturated switching· time

characteristics for 2N6383-2N6385, Fig. 13 - DC safe-area-af-aperatian
2N6055, 2N6056. far RCAtOOO and RCAt001.
COLLECTOR CURRENT ( ~)-A

92CS-20Mt RI
230 _____________________________________________________________________
2N6386,2N6387,2N6388
8- and 10-Ampere N-P-N Darlington Power Transistors
60-80-'00 Volts, 65 Watts Features:
• Operates from I C without predriver
These RCA devices are monolithic n-p-n the 2N6667, and the 2N6388 is comple- • Low leakage at high temperature
silicon Darlington transistors designed for mentary to the RCA8203B and the • High reverse second-breakdown capability
low- and medium-frequency power appli- 2N6668_ A.pplications:
cations_ The double epitaxial construction • Power switching
of these transistors provides good forward • Hammer drives
and reverse second-breakdown capability; ,-----------, • Series and shunt regulators
their high gain makes it possible for them to I I • Aud io amplifiers
be driven directly from integrated circuits_ I I
I I
These devices are supplied in the JEDEC TO- TERMINAL DESIGNATIONS
220AB VERSAWATT package_ : I

1 1
The 2N6386 is complementary to the I I c
(FLANGE)
RCA8203 and -the 2N6666, the 2N6387 L _ _ _ _ _ _ _ _ _ .-l
is complementary to the RCA8203A and
92CS-20691RI I
E
Fig_ 1 - Schematic diagram for all types_ 92C5-27519
BOTTOM VIEW
JEDEC TO-220AB
2N6386 2N6387 2N6388
° VCBO 40· 60 80 V
VCER(SUS)
RBE = 100.\1 40 60 80 V , COLLECTQR-TO-EMJTTER VOLTAGE (VCE'. 3V ~
t±-
,
VCEOlsus) _ 40 60 80 V
° VCEV(sus)
, 1 1
I
VBE = -1.5 V 40 60 80 V 10:
-. ' t:::::=1"••1
° VE80 5 5 5 V £ -4 t-~C
° IC_ 8 10 10 A 0
S V~.¢'<
l
~ i
15 ,
ICM 15 15 A
° IB_ 0_25 0_25 0_25 10; t::::-«
A
° PT
JJ.
TC';; 250 C 65 65 65 , In
TC> 250 C
° Tstg,TJ-
Derate linearly to 150°C
-65 to +150
W
°c
Ji
01
, . " , , 6 810
1\,
, . 6 8100
° TL At distances:> 1/8 in_ (3_17 mm) Fig_ 2 - Typical dc beta characteristics

from case for lOs max_ .... 235 OC
for 2N6386, 2N6387, and
• 2N- Series types in accordance with JEDEC registration data format JS-6 RDF-2. 2N6388_
,oq"
,.
I
., ~~~~<'I
I I -:
"~
'I---
COLL[CTOR CURRENT lIe'-'
A
COLLECTOR-fO-EMITTER VOLTAGE (VCE'·5
CASE TEMPERATURE 1TC'-25"C
; , 10; 1'-
i!i \ ~ .."~f&.
ii '0
• a
~ "IS? \
~"~
",.
ffi ~~
~"." I~ ~~.
-00
f ,x ~ ;.
,I-
~
103 2
\ 1\ h I~
.. 6 81004 2 .. 6 8 105 2 4 68 106
NUMBER OF THERMAL CYCLES COL.L.ECTOR-TO-EMITTER VOLTAGE IVcEl-V
FREQUENCYIfI-MHr 1ICS-I9ita
Fig_ 3 - Thermal-cycling rating chart for Fig_ 4 - Typical smal/-signal gain for Fig_ 5 - Typical output characteristics for
2N6386, 2N6387, and 2N6388. aI/ types_ 2N6386, 2N6387, and 2N6388_
_____________________________________________________________________ 231
POWER TRANSISTORS
2N6386, 2N6387, ,2N6388

ELECTRICAL CHARACTERISTICS,At Case Temperature (TcJ =2!PC Unl_ Otherwise SpecIfied

CHARACTERISTIC VOLTAGE CURRENT 2N6386 2N6387 2N6386 UNITS
SYMBOL Vdc Adc
80 0 - - - - -1
• ICEO 60 0 - - - 1 --
40 0 - 1 - - - -
80 -1.5 - - - - - 0.3
• ICEV 60 -1.5 - - - 0.3 - - rnA
40 -1.5 - 0.3 - - - -
80 -1.5 - - - - - 3 COLL.ECTOR-TO-EMITTER SATURATION VOLTAGE
TC=1250 C 60 -1.5 - - - 3 - -
40 -1.5 - 3 - - - - Fig. 6 - Typir:al sawration characteristics for
• lEBO 5 0 - 5 - 5 - 5 rnA
2N6386. 2N6387. and 2N6388.
VCEO(sus) 0.28 0 40 - 60 - 80 -
VCER(SUS)
RBE = lOOn
0.28 40 - 60 - 80 - V
VCEV(sus) -1.5 0.28 40 - 60 - 80 - COLLt:CTOR-TO-EM'TTER VOLTAGE (VCE)- 3 Y
3 38 1000 20,000 - - - -
3 sa - - 1000 20,000 1000 20,000 T
• hFE 3 sa 100 - - - - - ?2.5
3 108 - - 100 - 100 - ~
.~ 10
3 38 - 2.8 - - - - §
3 58 - - - 2.8 - 2.8 u 7.~
* VBE 3 88 - 4.5 - - - - V
e
3 loa - - - 4,0; - 4.5 ~ 0
38 0.0068 - 2 - - - - 11 2,'
58 0.01 8 - - - 2 - 2
V
• VCE(sat)
88 0.088 - 3 - - - - , 2 •
loa 0.18 - - - 3 - 3 IASE-TO-EMITTn VOLTAGE IVIEI-I/
VF
-88 - 4 - - - - V
t2CS-20701"1
-loa - - - 4 - 4 Fig. 7 - Typical transfer characteristics for

* hfe 2N6386. 2N6387. and 2N6388.
f = 1 kHz 5 1 1000 - 1000 - 1000 -
*,hfel
f = 1 MHz 5 1 20 - 20 - 20 -
--
COLLECTOR SUH'lJ' \'DLTA8I': CYccJ.1O II
* Cob
VCB=10V, - 200 - 200 - 200 pF
55 '. • -18 -ICIeOO. Tc·ZS-C
f = 1 MHz • r-
ISlb
t = 1 s, nonrep. 25 2.6 - 2.6 - 2.6 - A
... - ...... rl!..
R8JC - 1.92 - 1.92 - 1.92 oc/W 2
a Pulsed: Pulse duration - 300 1'5, duty factor" 1.8%. UI

'. In accordance with JEDEC registration data format JS-6 RDF·2. , ..... ~
... I-t- .!a.
. , . . ..
COLLECTOR CLitHENT IICI-A
, ,
,
to
.cs-1I9201l1
Fig. 8 - Typical saturated switching-time

characteristics for 2N6386.
2N6387. and 2N6388.
232 ________________________________________________________________
POWER TRANSISTORS
2N6386,2N6387,2N6388
10
'J2C$-269DI
Fig. 9 - Maximum operating areas for 2N6386, 2N6387, and 2N6388 at T C = 25° C.
10
92CS-26900
Fig. 70 - Maximum operating areas for 2N6386, 2N6387, and 2N6388 at T C = 700°C.
__________________________________________________________________ 233
POWER TRANSISTORS
2N6420, 2N6421, 2N6422, 2N6423

High-Voltage Medium-Power Silicon P-N-P Transistors
Features:
The RCA-2N6420, 2N6421, 2N6422, and operational amplifiers, switching regulators, VCEo(susl = -175 V max_ (2N64201
2N6423 are epitaxial silicon p-n-p power . = -250 V max. (2N64211
converters, inverters, deflection stages and
transistors with' high-voltage ratings and high-fidelity amplifiers. = -300 V max. (2N64221
fast switching speeds. Typical applications =-300 V max_ (2N64231
These types are supplied in steel JEDEC • Large safe-operating area
for these transistors include high-voltage TO-213MA hermetic packages. • Thermal-cycling rathig

2N6420 2N6421 2N6422 2N6423
-250 -375 -500 -500 v
-175 -250 -300 -300 V
-6 V
-1 2 A
-5 A
-1 A
20 w
35 w
See Fig. I JEDEC TO-213MA
See Figs. 1&3 _ _ __
_ _ _ _ -65 to +200 _ _ _ __ (See dlmenalonal outline UN".)
°c
_ _ _ _ _ 235
°c
""': CASE TEIIFERATURE (TC).IOO·C
. .·' ~oN":':ooLsll. ~o/>

• In accordance with JEOEC registration data. (CURVE MUST aE DERATED LlNEARl.Y
Wlli INC~EAiE IN TEMjERATUREI
Dt>
1.1
"
T
/~
·
tj •
§E , ~
. .
V'O,I
i!i~ •
~ 4
R-
il
"0_
<,
';.~
I\.
8 trveEO M4X,--175V (tN6420)
1"1
o.<lj, c
I
· , . .. • ... • ...
VCEO MAX.·'-2SO II (2N6420
~ VCEO MAX .• -300VI2N6422.2N&4231
-I °10 . -100 -1000

COLLECTOR-TO-[IIITTER VOLTAGE (VCEI-Y
'2CI-30342
Fig. 2 - Maximum operatinu areas for all

types, at T C = lOa c.
NOTE:: CURRENT OER ... TlNG ...T CONST"'NT VOLTAGE:

APPL.IES ONL.Y TO THE DISSIPATION·UMITED PORTION
...ND IS/II-U.. ITED PORTION OF ..... xl ..U.. ·OPER...TING-
AltEA CURVES. DO NOT DERATE THE SPECIFIED
i~
~·w
V"'L.U[ fOft IC ..... x.
§~~
~~
i~er~
100
70
~!~
~~~
..
'0
~~5
~~
~
II 110 7S 100 IB Il1O m 100
6 8 I 4
-10
COLLECTOR-TO-EMITTER VOLTAGEIVCEI- V
Fig. 3 - Derating curves for all types.
92CM-30343
Fig. 1 - Maximum operating areas for all types at T C = 25°C.
234 ___________________________________________________________
POWER TRANSISTORS
2N6420,2N6421,2N6422,2N6423
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C
TEST CONDITIONS LIMITS ·

I
~
CHARAC- VOLTAGE CURRENT 2N6421
2N6420 2N6423 Units
TERISTIC Vdc Adc 2N6422
VCE VeE IC IB Min_ M8X. Min. Max. Min_ M8x.
• 'CEO -150 - -10 - -5 - -5 ·• '~4-~--~~+--~
• 'CEX -225 1.5 - -1 - - - -

2N6421 -340 1.5 - - - -1 - -
2N6422 -450 1.5 - - - -1 - - rnA
-450 1.5 - - - - - -2
• 'CEX -225 1.5 - -3 - - '- - Fig. 4 - Thermal-cycling rating chart for all types.
Tc=150°C -300 1.5 - - - -3 - -5

• 'EBO 6 0 - -5 - -0.5 - -0.5
hFE -10 -0.18 40 - 40 - 40 -

-10' -0.58 40 200 - - - -
• -2 -0.758 - - - - 10 100
-10 -0.758 - - - - 30 150
• -2 -18 - - 8 80 - -
• -10 -18 10 - 25 100 - -
VBE -10 -18 - -1.4 - -1.4 - -1.4
• VBE(S8t)
-0.75 8 -0.075 - - - - -1.8 -
-18 -0.1 - -1.4 - -1.4 - - -0.01 Z 4 ' 8 .0 .1 "-, .. 6 '_10
-0.75 8 -0.075 - - - - - -1 COLLEClOR CURRENT IICI-A
•
VCE(S8t)
VCEO(sus)b
-18 -0.125
-0.05a 0
-
-175
• -5
-
-
-
-0.75
-
-
-300
-
-
V
Fig. 5 - Typical de beta characteristics for all types.
2N6421 -0.058 0 - - -250 - -

.--
2N6422
'SIb -100
-0.058 0 -
-0.15
-
-
-300
0.15
-
-
-
-0.15 - A .,
1
~ 4
COLLECTOR-lO-EMITTER VOLTAGE (VCE)--IOV
CASE TENPERATURE {TC}-Z'·C
• Ihfe l
f = 5MHz -10 -0.2 2 - 2 - 3 -
•,
g, 7
i.-
• f = 1 kHz -30 -0.1 25 350 - - - - ~

~ '0
Cobo
I \
VCB=10V 0 - 180 - 180 - 180 pF .~ " T
~
10
f= 1 MHz
- ,
• - - - -
. ..
-0.75 -0.075d 0.5
1r C
-1
-0.75
-O.ld
-0.07sd
-
-
-
-
-
- -
3 -
-
-
6
-0.01
, .. -0.1
COL.LECT~
, .. -I
CURRENT \ rc 1- A
,
-10
• 1sC
-1 -O.ld - - - 4 - - /ls
Fig. 6 - Typical gain-bandwidth product for 811 types. '
-0.75 -0.075d - - - - - 3
• 1f C
-1 -O.ld - - - 3 - -
1- 110 -1 I 5 5 j
·10 accordance with JEDEC registration data. CVee - -200 V. tp ~ 20 '"
.Pul.... : pulse duration - 300 " •• duty factor <;;;2%. d-I B1 ~ IB2
bCAUTION: The .ustaining voltage VCEO('u,)
MUST NOT be mea.ured on a curve tracer.
COLLECTOR CURRENT UCI-A

Fig. 7 - Typical saturation-voltage characteristics
for all types.
----____________________________________________________________________ 235
P<;)WER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6420,2N6421,2N6422,2N6423
~1=T~:l.20zSA PUlSES I,
COLLECTOR SUPPL.Y VOlT_ 1Vee)- -toO v
III-IIZ-IcllaO.ll!l!c
CASE TEMPERATURE (Te,*25· C
I I
0.'
-I~ -2
COLLECTOR CURRENT Ilel-A
COLLECTOR CLMENT (lei-A

Fig. 9 - Typical storage time characteristic for
Fig. 8 - Typical transfer characteristics for all types. all types. Fig. 10 - Typical turn-on time and fall-time
236--___________________________________________________________________
POWER TRANSISTORS
2N6477, 2N6478, RCA3441

Hometaxial-Base, Medium-Power Silicon Features:
• Maximum safe-ar8a~f-operation curves
N-P-N Transistors • Low saturation voltages

• High diSSipation ratings
Designed for Medium·Power Linear and Switching Service • Thermal-cyding rating curves
in Consumer. Automotive. and Industrial Applications
Applications:
RCA 2N6477 and 2N6478 are hometaxial·base silicon n-p-n to second breakdown over a wide range of operating conditions. • Series and shunt ,egulaton
transistors intended for a wide variety of medium-ta-high The VERSAWATT case has a proven thermal-cycling capability.
power, high-voltage applications. These devices. which are • High-fidelity amplifiers
This capability is assured by real-time quality controls in our
voltage extensions of the 2N5298 family. are especially useful manufacturing locations. ,All these -types are supplied • Power switching circuits
in vertical output stages in color and black-and-white TV. The in the JEDEC TO-220AB straight-lead version of the • Solenoid drivers
units differ in voltage ratings and in the currents at which para- package_ They are also available on special order in variety of a • Vertical output stages in color
meters are controlled. lead-form configurations. Two popular variations have leads and e/WTV
formed to fit TO-66 sockets (specify formed lead No_ 62011
RCA3441 is a silicon n-p-n transistor intended for a wide or printed-circuit boards (specify formed lead No_ 62071_
variety of high-current applications_ The hometaxial-base Detailed information on these and other VERSAWATT outlines TERMINAL DESIGNATIONS
may be obtained from your RCA Sales Office.
_n
construction of this device renders it highly resistant
B
/c
MAXIMUM RATINGS. Ab$Dll/t~·M.J(;,"I/,"
COLLECTOR·TO·SASE VOLT AGE
V./I/~s.
Veso 140
2N1478
160
RCA.l
160 V
i:
, I
,
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE I I
With external base·to·emltrer reSl5tance IRSEI '" 100 n 120 140 140 iI
l.n.,----,-,----,
I
VeERhus) V
With base open VCEOhus} 130 150 150 V
With base reverse·blased VSE '" -1 S V 140 160 BOTTOM VIEW E
VCEV(susl 160 V
EMITTER·TO-BASE VOLTAGE VESO 5 9ZCS-21519
V
CONTINUOUS COLLECTOR CURRENT. 2.5 2.5
'e A
JEDEC T0-22OAB
PEAK COLLECTOR CURRENT A
CONTINUOUS BASE CURRENT
TRANSISTOR DISSIPATION-
AI case temperatures up 10 2Soc
'.
PT
50 50
o.rll. hnNrly 10 lSOoC
3.
A
W
At case temper.'ures above 2SoC
1.8 1.8 W
TEMPERATURE RANGE'
Storage and Operallng !Junction)
Oerat,linearly.t 0.0144 wfc
--65 to 150.oC
PIN TEMPERATURE IOullng Soldering)
At dlstances:2: 1132 In. IO.S mm) from seating plane for 10 s mu
235 "c
• 2N- Series types in accordance with JEDEC registration data format JS-6 RDF-2.
ELECTRICAL CHARACTERISTIcs. At Case Temperature ITC) = 2!t'C unless atllerwi"" specified .co.
TEST CONDITIONS LIMITS 'r---+---~-+-+~---+--~~+-+1
2N6417 2N64I78
Vdc Ad.
VCE VeE Ie Ie MIN. MAX. MIN. MAX.
· Collector-Cutoff Current:
With base ooen
With base-emitter
ICEO
80
100
130 -1.5
0
mA
junction reverse-biased 'CEV 150 -1.5
120 -1.5 10
AtT C "1500C ICEV
·
140 -1_5 10
Emitter-Cutoff Current leBO -5 2 mA
Collector-ta-Emitter Sustaining
Voltage:
With base open
VCEO(sus) 0_'· 0 120 140 NUMBEA OF THERMAL CYCLES
With external base·to-emitter

resistance IA BE) = 100 n VCER(susl 0_'· 130 150 V Fig. 1· Thermal·cycling rating chart for
2N6477. 2N6478.
VCEVlsus) -1.5 0_'· 140 160
·
reverse-biased
DC Forward-Current Transfer I" 25 150 25 150
hFE
·
Ratio 2." 5 5
100,
·
Collector-to-Emitter I" 0.1
VCE(sat) V
Saturation Voltage 2." 0.5
•
··
I" I.B 1.8
Base-la-Emitter Voltage VBE
4 2." 3 3
V
} · !
Magnitude of Common-Emitter.
.~r--ol~ ~ 0
~ t+j( .\~<.1,
0
Small-Signal. Short-Circuit ;:
Forward·Current Transfer Ratio: I h,.1 0.5 : 10 ....
f~40kHz ~
··
• • f "\~1.
·
200 200 kH,
Gain-Bandwidth Product IT 0.5 ,\ \ \1\ \.
Common-Emitter. Small-Signal, ~ :-"-0+
f \ 1\ ~\~
Short-Circuit Forward-Current ;;;
~ ,
h,. 0.1 25 25
Transfer Ratio:
r-
~ ~~"t>\>,,-o I
f = 1 kHz
Thermal Resistance:
Junction-ta-Case
Junction-to-Ambient
R8JC 2.5
.u
2.5
.u °C/W
,
1000
. . .. . . . .
~ \% I'>
10,000
100.000
R8JC
• In accordance with JEDEC registration data format (JS-6 RDF-21. • Pulsed: Pulse duration" 300 ~s. duty factor" 1.8%. Fig. 2· Thermal·cycling rating chart for
CAUTION: The sll5tainingvol1age VCEOlsusl. VCERlsusl. and VCEVlsus) MUST NOT be measured on a curve tracer. RCA3441.
___________________________________________________________________ 237
POWER TRANSISTORS
2N6477, 2N6478, RCA3441

ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc1 = 2!1'C unless otherwise specified
TEST CONDITIONS LIMITS 1.2
VOLTAGE CURRENT ~ l-
CHARACTERISTIC SYMBOL
V .. Ad,
RCA3441 UNITS I IDr----trl"'tt1Httt---t--'I-;tHtttt-----t---t-rti""ffi
~ /'
Collector-Cutoff Current: ICED
VCE
100
VEe V. E 'c '.• MIN. MAX.
t; o.e'r----t---t-tt1Httt---t---t-rtiTtti'<,,-H-t-ti+rt1
With base open .2. 8 . "
IE O"r----t---t-tt1Httt---t---t-rtitttt---""i"d-Hi+tt1
~
Withbase-emilter ICEX 12. -1.5
junction reverse-biased mA
140 -1.5
AIT e ·,S0oC
Emitter-Cutoff Current
'CEX
leBO
12.
14.
-1.5
-IB I. mA 3
~ 0.4'r----t---t-tt1ittt--t---t-rtitttt----t---t-r'!II+tt1
~~ O.2+..... ++t+lrl+tI-++t+ltltf-++t+I+t-It
Collector-la-Emitter 4 1i 8 2 .. 6 II 1
10 10 10
Sustaining Voltage: VCEO(susl 0.13 140 COLLECTOfi CURRENT "CI-mA
With base open
emitter resistance VCEAlsus) O.la 150 V Fig. 3 - Typical gain·bandwidth product
(R BE ' = 100 n
for all types.
With base-emitter junction VCEV{sus) -1.5 O.l a 160
reverse-biased
DC Forward-Current hFE 0.58 20 150
~ 140 COLLECTOA-TO-Et.IITTER VOLTAGE tVCE)'4V
Transfer Ratio
Collector-Ie-Emitter Vce{sat) O.Sa O.OSa 1.2 V
Saturation Voltage
Base-Ie-Emitter Voltage V BE O.Sa V
Gain-Bandwidth Product fT 0.2 200 kH,
Common-Emitter,
Small-Signal, Short·
Circuit Forward· hf. 0.1 25
(1 = 1 kHzl
Forward·Bias Second
Breakdown Collector 'Sib 120 0.3 A
Current b ft >
1 sl
Thermal Resistance: 10'"3 a 4 11,0 - 2 2 4 8 '10'"1 2 4 ", 2 4 ' ',0
Junction·to-Case ROJC 3.5 COLLECTOR CURRENT tlCI- A
°ctw
Junction-lo-Ambient ROJA 70 Fig. 4· Typical dc beta characteristics
&Pulsed: Pulse duration'" 300 ~s, duty factor'" 1.8%. bpulsed: '·seca,nd non·repetltlv~ pulse. for2N6417.
- 140 COLLECTOR-TO-Et.IITTER VQLTAGE tVCEI'4 v
! l20f~-t-t-ti-t~""<t-t-tii-+--H-++-t-t-H1
i \
I\:ASE TEIIPERATlHtE
ITCI'2~C
<t
I
u
!:! z .. I'tcr2
J- v 3 Vi 10
Z COLLECTOR CURRENT I Icl- A
'"
0::
0:: Fig. 5 - Typical dc beta characteristics
:>
<.> for2N6478.
0::
~
<.>
'"
...J
...J
o
<.>
50 100 150 200

COLLECTOR-TO-EMITTER VOLTAGE tVCEI-V
COLLECTOR- TO-EMITTER VOLTAGE (VCE) - V 92CS- 22440

Fig. 6 - Maximum operating areas for 2N6477 and 2N6478. for 2N6478 and RCA3441.
238 _______________________________________________________________________
POWER TRANSISTORS
2N6477, 2N6478, RCA3441
10
B
6
PULSE OPo'IERATION*
Ie MAX. PJLSED
4
2.5
Ie ~AJ ~O~TI~UOUS ~ 1'''1' I!~
... -
'X i : i
2 ~"
N."~ '" l"-
~-
i : j j i
-f- .- -,. . .
<1
I J
1°".,~ [\t"( ~ r
0 &"t"1:S ~.
100 }JoS
I
u
. 1'.qr;:
B
-
H
, 01-
l-
2
W
6
I
.,.,
" 50~ ~; COl..LECTOR-TO-EMITTER VCLTAGE IVCfI-V
4
"' .' I' . I .
"""' -
2m'--i-j---
I-
~
-'
"'0
0.1
2
- CASE TEMPERATURE (TC)=IOQoC
(CURVES MUST 8E DERATED LINEARLY
_ WITH I'NeR~Ar liN TE~PERATURE) _..
!:· i- I I I I I
IS/b-LlMITED
1\
20jS;
+: .- -
·1
Fig. 9· Typical output characteristics
for 2N6477.
0
50ms
" B "FOR SINGLE
NON REPETITIVE
6 PULSE , I
200 ms
4 de
VeEO MAX. = 140 V (2N64781 I
I
•
' 120 V --t--I ..... :
. . "I -
VeEO MAX . :0 (2N6477)
2
1I i 1 I
0.01 I II I !
6 8 10 6 8 100 140 2 6 8 1000
120
92C5-22442 0.6 0.6 I 1.2
BASE-lO-EMITTER VOLTAGE {VBE1-V
Fig. 8· Maximum operating areas for 2N6477 and 2N6478.
for 2N6477 and 2N6478.
<
I
u 1.0 I.~ 2.5
tj BASE-lO-EUITTER VOLTAGE {VaEl-V
I-
Z Fig. 12· Typical transfer characteristics
'"II::
II::
for RCA3441.
::>
U
II::
0
I-
U
'"
..J
..J
0 4
u
4 6 2 4 6
8 10
. COLLECTOR -TO-EMITTER VOLTAGE (VCE)-V
9ICS- 2ZZl0RI
Fig. 11 . Maximum operating areas tor RCA3441.
__________________________________________________________________ 239
2N6479,2N6480
Radiation-Hardened Silicon N-P-N Power Transistors

Epitaxial-Planar Types for Aerospace and Military Applications
Rated for Operation In Radiation Environments

.wlth Cumulative Neutron Fluence Levels to 1 x TERMINAL DESIGNATIONS
1014 Neutronslcm2 and Gamma Intensity to 1 x
108 Rad(Sl)/s
The RCA·2N6479 and 2N6480· are The 2N6479 and 2N6480 are intended
epitaxial silicon n-p-n planar power- for use in 5-to-10 ampere high-
switching transistors. They are de- frequency power inverter service.
signed for aerospace applications in They are supplied in hermetic flat
which they might be subjected to ex- 3/4-inch (19.05 mm) diameter
treme neutron and gamma-ray ex- packages with radial leads.
posure. -Formerly RCA Dev. Nos. TA8007 and
TA8007B, respectively. ,zes -21523
(RADIAL)
MAXIMUM RATINGS, Absolute-Maximum Values
(See dlmenalonal oulline "r'.)
2N6479 2N6480
* VCBO···· _............................... - .. ; 100 100 v
VCER(SUS)
RBE .. 100Q ............................... . 80 100 v
* VCEX _......................... _............ . 60 80 V
* VCEO(SUS) ................. _................. . 60 80 V
* VEBO······.··.· ............................ . 6 V
*·IC .......................................... . 12 A
ICM··········.····.············.····.· .. · .. . 25 A
*IB ........................................... . 5 A
* 11':
TC .. 25·C ................................ . 87 W
TC<25·C ................................. . _See Fig.1 and5_
TC = 100·C .............................. . 50 W
* TJ, Tstg .................................... . -65 to 200 ·C 2. 5O~toOl!5l5Oln2lOO
CASE TEMPEIIATURE ITct-"t
* TL: Nct-lIas
During soldering, at distances 1/32 in. (0.8 mm) Fig. 1 . Derating curves for both types.
from seating plane for 10 s max ............... . 230 __·C
'In.accordance with JEDEC registration data
104
2 468
105
2 " 68
10'
2 4

'I
101
2 .. 6 .
10'
I
. .. 10 1
COLLECTOR CURRENT Ilcl-A
. .. 10'
Fig. 2· Thermal·cycling rating chart for both

types. Fig. 3· Typical I-Me V·equivalent neutron dam· Fig. 4· Typical collector·to·emitter saturation
age coefficient as a function of collec- voltage as a function of I·Me V·equiv·
tor current for both types. alent neutron f1uence for both types.
240 ____________________________________________________
- - -_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
2N6479, 2N6480
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25'C
PRE·RADIATION
CHARACTERISTIC VOLTAGE CURRENT 2N6479 UNITS
V de Ade 2N6480
VCE VBE IC IB Min. Max.
ICBO 100a - 1 rnA
ICES 60 200 -
IlA
ICEV 100 0 1 -
(TC =
100'C) 60 0 1 -
rnA
lEBO -6 - 2
VEBO (IE =
2 rnA) 6 -
VCEO(sus)b 2N6479 0.2c 60 -
2N6480 0.2c 80 - V
VCER(sus)b (RBE = 100Q)
2N6479 0.2c 80 -
2N6480 0.2c 100 -
hFE 2 12c 20 300
VBE(sat) 12c 1.2 - 1.5
V
VCE(sat) 12c 1.2 - 0.75
IS/b (t - 1 s) 12 7.3 - A
ES/b (RBE - 100 Q, 5 1.25 - mJ
L =
1OOIlH)
Ihlel (I =
10 MHz) 5· 1 10 -
IT 5 1 100 - MHz
Cobo (I =
1 MHz) 10a - 400 pF
tr 30 d 12 1.2 - 400
ts 30 d 12 1.2e - 800 ns
tl 30 d 12 1.2e - 200
ReJC 10 5 - 2 'C/W
'VCB value.
bCAUTION: The sustaining voltages VCEO(SUS) and VCER(sus) MUST NOT be measured on a curve
tracer. These sustaining voltages should be measured by means of the test circuit shown in Fig. 10.
cPulsed; pulse duration" 350 I's, duty factor'; 2%.
dVCC value.
81B1 = - IB2.
TYPICAL CHARACTERISTIC DURING GAMMA EXPOSURE FOR DOSE RATES

OF LESS THAN 1 x 108 RAD(Si)/see
For both UNITS
CHARACTERISTIC VOLTAGE - V de Types
VCB VBE TYPICAL
Coliector·to·Base Coulomb
Charge Generation 20 0 5x10-8
Rad
Constant (C)
The charge generated In the depletion region of a transistor IS proportional to the volume of the
depletion region, the total dose, and the energy of the gamma radiation.
The primary base·collector photo current [1 pp(base)l = (Cli. where i is the gamma dose rate in
Rad(Si)/s.
________________________________________________________________________ 241
POWER TRANSISTORS
2N6479,2N6480
POST·NEUTRON·RADIATION ELECTRICAL CHARACTERISTICS : CASE TEMPERATURE ITe)' 100·C
AFTER EXPOSURE TO 5 x 1013 NEUTRONSlcrn2 (1 MeV equiv.), At Case

Temperature (TC = 25°C
VOLTAGE CURRENT 2N6479
Vdc Adc 2N6480
VCE VBE IC IB Min. Max. ,
ICEV 100 0 - 1.2 rnA
lEBO -5 - 2.2
VCEO(sus)b 2N6479
2N6480
0.2c
0.2c
60
80
-
- V 0' III ... '00
. ..'000
hFE 5 7c 12 - COLLECTOR -TO -EMITTER VOLTAGE (VCEI-V
Fig. 6 - Maximum operating area for both types

VBE(sat) 7c 1.4 - 1.5 V ITC = 100 'C).
VCE(sat) 7c 1.4 - 1.5
-
Ihfel (f = 10 MHz) 5 1 10 -
K" - 9x10- 1•
bCAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer. This sus·
taining voltage should be measured by means of test circuit shown in Fig. 10.
CPulsed; pulse duration'; 350 ~s, duty factor'; 2%.
1 Knowing K, hFE2 may be calculated for other

hFE2 fluences using the relationship:
"Damage constant K =
Where hFEl = Beta prior to exposure OJ " 6 e I
hFE2 = Beta after exposure COLLECTOR CURRENT (leI-A
9 = Neutron fluence (1 MeVequiv.) Fig. 7· Typicaf de beta characteristic for both

types.
COLLECTOR CURRENT IIel -A
Fig. 8 - Typical base-to-emitter saturation

voltage characteristic as a function of
collector current for both types.
COLLECTOR-TQ-EMITTER VOLTAGE (VCEI-v

9ZCS-2112JRI
Fig. 5 . Maximum operating areas for both

types ITC = 25 'C).
COLLECTOR CURRENT IIel-A
Fig. 9 - Typical collector·to·emltter saturation

voltage characteristic as a function of
collector current for both types.
242
POWER TRANSISTORS
2N6486-2N6491
15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base

VERSA WATT Transistors
Complementary Pairs for General-Purpose Features:
Switching and Amplifier Applications • Thermal-cycling ratings
• Maximum safe-area-of-operallon
RCA-2N6486-2N6491·, inclusive, are uti Iizi ng complementary-symmetry ci rcuits. curves
epitaxial-base silicon transistors. The
• Color-coded packages of molded-
2N6486, 2N6487, and 2N6488 are n-p-n These devices are supplied in the RCA silicone plastic:
complements of p-n-p types 2N6489, VERSAWATT package in color-coded Green - p-n-p t2N6489, 2N6490. 2N6491)
2N6490, and 2N6491, respectively. All molded-silicone plastic; the 2N6489- Gray - n-p-n (2N6486, 2N6487. 2N6488)
these devices are intended for a wide 2N6491 (p-n-p) devices are green, and
variety of medium-power switching and the 2N6486-2N6488 (n-p-n) devices are TERMINAL DESIGNATIONS
amplifier applications, and are particu- gray. All are regularly supplied in the
larly useful in high-fidelity amplifiers JEDEC TO-220AB. c
(FLANGE)
• Formerly RCA Dev. Nos. TA8325. TA8324.

E
,-
TA8323, TA8328. TA8327. and T A8326 respectively. BOTTQMVIEW
JEDEC TO·220AB 92CS-Z1'19
(See dimensional oulline "S".)
N·P-N 2N6486 2N6487 2N6488

P-N·P 2N6489. 2N6490+ 2N6491.
• COLLECTOR·TO·BASE VOLTAGE VCBO 50 70 V
90
COLLECTOR·TO·EMITTER VOLTAGE:
With 1.5 volts (VBE) of reverse bias, and external
base·to·emitter resistance (RBE) ~ 100 Q VCEX 50 70 90 V
resistance (R BE) = 100 n . . VCER 45 65 85 V
With base open. . VCEO 40 60 80 V
• EMITTER·TO·BASE VOLTAGE. VEBO 5 5 5 V
• CONTINUOUS COLLECTOR CURRENT IC 15 15 15 A
• CONTINUOUS BASE CURRENT . IB 5 5 5 A
At case temperatures up to 250C. 75 75 75 W
At ambient temperatures up to 250C 1.8 1.8 1.8 W
At case temperatures above 2SoC. . Derate linearly 0.6 WloC
At ambient temperatures above 25°C Derate linearly 0.0144 wfOc
Storage and operating (Junction). . - - - - -65 to +150 - - - °c
• LEAD TEMPERATURE (During soldering):
At distance;::: lIB in. 13.17 mm) from
seating plane for las max. . . . . . 235 °c
• In accordance with JEDEC registration data format JS-6 RDF·2. • For p-n-p devices, voltage and current values are negative.
I COLl.ECTOR-TO-EMITTER VOLTAGE I'ICEl-4V

100S
, -ffF"':- PT (IIIAX.l.1~W 1+
II CASE TEMPERATURE (TC)-25-C -
:r 10'r--r-H-rb-t-""""<ti--t---t-t-t-i
'-1--'.0 ~ i
I~
- ~J. C'~~±r--=
~ ~"'.()-
£
,~""
~
.....
1-+-
100
15
'0
:~[
~i
=2 1\
~.
" .. c'"
~ ~ ·r-T-~~~--r+++~~\~\rH
l:i -'
4~i
'«"", ~ 4r--r-H~r--t-~-t~--t---t-t~
~t;
'\';' ~
, ~ N----lC,
\ I\, 'N-,_ ~
o!~ ,
~
-1011 -50 I) 25 50 1011 150 2CICI 25D

,;
,
0_0
, rv, . 1\ . 0.01 4 (; B I
CASE TEMPERATURE IT cl- DC
NUMBER Of THERMAL CYCLES COl.LECTOR CURRENT (IC)-A
Fig. 1 - Derating chart for all types. Fig. 3 - Typical gain-bandwidth product as a
Fig. 2· Thermal·cycling rating chart
function of collector current for all types.·
for all types.
• For p--n·p devices, voltage and current values are negative.
___________________________________________________________________________ 243
POWER TRANSISTORS
2N6486-2N6491
ELECTRICAL CHARACTERISTICS, At case temperature (TC) = 2SOC unless otherwise specifil!d
VOLTAGE CURR 2N6486 2N6487 2N6488
Vdc Adc 2N6489. 2N6490. 2N649H
V CE V BE Min. Max. Min. Max. Min. MIx.
'C
Collector-Cutoff Current: 35 - 500 - - - -
With external base-emitter 'CER 55 - - - 500 - - ~A
resistance (RBEI = lOOn 75 - - - - - 500
• With base~emjt1er junction reverse 45 -1.5 - 500 -
biased and external base-to-emitter 65 -1.5 - - - 500 - - ~A
resistance (RBEI = lOOn 85 -1.5 - - - - - 500
' CEX 40 -1.5 - 5 - - - -
AtTC= 150aC 60 -1.5 - - - 5 - - mA
80 -1.5 - - - - - 5
20 - 1 - - - -
* With base open 30 - - - 1 - - mA
' CEO 40 - - - - - 1
Emitter-Cutoff Current 'EBO -5 a - 1 - 1 - 1 mA
* DC Forward-Current
hFE
4 58 20 150 20 150 20 150
Transfer Ratio 4 158 5 5 5
Collecta r -to- Emitter
Sustaining Voltage VCEOlsusl 0.2 401> 60b 80b
• With base open
With external base-emitter
VCERlsusl 0.2 45 b 65 b 8S b V
resistance (R SE ) = lOOn
With base-emitter junction reverse-

biased and external base-ta-emitter VCEXlsusl 1.5 02 50b 70b 90b
resistance (R SE ' = lOOn
4 58 13 1.3 1.3
* Base-to- Emitter Voltage V BE
4 158 3.5 3.5 - 3.5
V
* Collector-ta-Emitter --{ I B - 0.5 A sa 1.3 1.3 - 1.3

V
Saturation Voltage I B ::;: 5 A VCElsati 15" 3.5 3.5 - 3.5
* Magnitude of Common-Emitter
Small-Signal Short-Circuit
Forward·Current Transfer Ratio:
1=1 MHz
I hIe I 4 1 5 5 5
• Common-Emitter. Small-Signal,
Short-Circuit, Forward-Current hIe 4 1 25 - 25 - 25 -
Transfer Ratio 11= 1 kHzl

Thermal Resistance
Junction-to-case ROJC - 1.67 1.Gi - 1,67
°C/W
Junction-ta-ambient ROJA - - 70 - 70
* In accordance with JEDEC registration data format (JS-6 ROF·21. b CAUTION: Sustaining voltages VCE.O(sus), VCER(sus), and VCEX(sus)
• Pulsed; pulse duration =: 300 ,US, duty factor -= 1.8% MUST NOT be measured on a curve tracer. (See Fig. 19)
• For p·n·p devices, voltage and current values are negative .
• CASE TEMPERATURE (TCI·IOO·C I 1.1 1

2 ~gN~~:UOUS + + , 1 I PULSE OPERATION·
r----
\
10 .......... 1\. I\. Iv
~'<
'~
'~
~ '9"'' II-
Z.FOR ~INGLE I ('04-
,
NONREPETITIVE
PULSE I I ~ \
:f-- .1 •• 6,
4 r - - VCEO MAX' -40·{ (2NS489) ""'''~~ 1\.1\.
VCEO MAX • ~ ~g ~ ~~~:::~: r-.~
0,1
2r-----
.
+ 80 V IZN64SS:r=
VCEO MAX,' - 80 V (2N64911
, , ,
f--
40 60 sO 100
, ,
COLLECTOR CURRENT (Ici-A
I I.!i
BASE-fO-EMITTER VOL TAGE (VaE)-V
Fig, 4 - Maximum operating areas for all types.· Fig. 5· Typical dc beta characteristics for Fig_ 6 - Typical transfer characteristics for
2N6486, 2N6487, and 2N6488. all types.·
244 __________________________________________________________________________
2N6486-2N6491
CASE TEMPERATURE (Tel = 25°C

(CURVES MUST 8E DERATED LINEARLY
'''I111I
" hhl<; """n'i'r'I
;~:E!!",.:,E,'~:~ifttfi" 'I'
I"i
.,
Ili!i ...... , "..
;::;,~
I':::
INCREASE IN TEMPERATURE)
PULSE 0
t~llijl ttl/Ii:. H+iFm::
"I
u
H
•• I 1:;:
A E CURIi[N~ 18 ." mA : ' "
12,~ I:)
COLLECTOR-TO-o.UTTER VOLTAGE (veEI-v
Fig. 8· Typical output characteristics for

all types. +
6 8 10 40 60 80 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE1~V
92C5 -22805
Fig. 7 ~ Maximum operating areas for all types. •
COLLECTOR CURRENT(Icl-A
Fig. 9 - Typical saturated switchi~g~4~
characteristics for 2N6486,
2N6487, and 2N6488.
.,[CASE TE."""" ",I

II
111111~
I I:
liT IH
I
",J----rr +.'"t!----,---!-+I-l---f-l+J.:''-+--i.......j 1::.'"
6 I-t- • r
lA .i
/i
.. ,-0 I -I -10
c!
.,
I: Ie:"
1
COLLECTOR CURRENT (leI-A COLLECTOR CURRENT(Icl-A COLLECTOR CURRENT (IC)-A
nCS-,9~81
Fig. II· Typical saturated switching Fig. 12· Typical coJ/ector·ta~emitter satur·
Fig. 10· Typical dc beta characteristics
characteristics for 2N6489, ation·voltage characteristics for
for 2N6489, 2N6490, 2N6491.
2N6490, and 2N649 I. all types.
________________________________________________________________ 245
POWERTRANSISTORS ____________________________________________________ ~-
2N6510-2N6514
High-Voltage, High-Current, Silicon N-P-N Power Switching

• Fast switching speed
• Epitaxial pi-nu construction
For Switching Applications in Industrial • Hermetic steel package-JEDEC TO-3
Commercial and Military Equipment • Maximum-safe-area-of-operation curves
• Thermal-cycling rating chart
The RCA-2N6510, ·2N6511, -2N6512, -2N6513, and ·2N6514· These devices are hermetically sealed in a steel JEDEC TO-3
are epitaxial silicon n-p-n power transistors with pi-nu con- package. They differ from each other in breakdown-voltage TERMINAL DESIGNATIONS
struction. They are especially designed for use in electronic ratings, leakage, and beta characteristics.
ignition circuits and other applications requiring high-voltage,
-Formerlv RCA Oev. Nos. TAB8470, TA8847A, TAB847B, TA8847C,
high-energy, and fast-switching-speed capability. and TAB847E, re.pective1v.

2N6510 2N6S11 2N6512 2N6513 2N6614
·COLLECTOR-TO·BASE VOLTAGE VCBO 250 300 350 400 350 V
COLLECTOR-TO·EMITTER SUSTAINING VOLTAGE:
With external base·to-emiller resistance RBE =50 n . ... VCER(sus) 250 300 350 400 J50 V
With base open . ... VCEOlsus) 200 250 300 350 300 V
·EMITTER-TO-BASE VOLTAGE VESO 6 6 V
·CONTINUOUS COLLECTOR CURRENT. Ie A
·CONTINUOUS BASE CURRENT I. A JEOEC TO-3
-EMITTER CURRENT. 10 10 10 10 10 A
"TRANSISTOR DISSIPATION-
'E (See dimensional outline "A".)
PT
At case temperatures up to 25°C . 120 120 120 120 120 W
At case temperiJtures above 25°C. - - - See Figs. 1 and 2. _ _ _
-TEMPERATURE RANGE:
Storag~ and Operating (Junction) . -65 to +200 _ _ _ _
°e
-PIN TEMPERATURE (During Soldering):
At distiJnces ~ 1{32 in. (0.8 mm) from seiJting plane for 10 s max. 230 °e
·In accordance with JEDEC registration data format JC-25 RDF·l.
SO 75 100 125
CASE TEMPERATURE ITCI --c
Fig. 2 - Derating curve for all types.
-
·
100
"-
?·
• I \ I~~~'~
z
0
~
~
· 2 \ 1\ ?
~,
r-:".~
~~\~~~
-s.~+~
6
, ;; 1\ 1\ ""',
~
.. I~ ~, \.~. ..~ , In
o
. ..
t(' ~
, .
0
·
10
'0'
10'
Fig_ 3 - Thermal-cycling rating chart

for a/l types.
~I008 COLLECTOR-TO -HUTTER VOLTAGE (VeE)-' v
'" ,
·, I I 12.5·C
0
r::-"
S
I rT"" 1 1 ~
CASE ITE~J~RE (T c)· -40·C ..... J"., l '\
~
,
'0
·
10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V 92CS-25021
~
~ ,
·
~
Fig. 1 - Maximum operating areas for al/ types. g I
, , . ,
COLLECTOR CURRENT (1cl- A
, . , .. ,
Fig. 4 - Typical dc beta characteristic for

all types.
246 _____________________________________________________________________
2N6510-2N6514
ELECTRICAL CHARACTERISTICS Case Temperature (td = 25°C Unless Otherwise Specified '": c ~MAX.lCONTlNUO~ <~.rll}~i'>t
e-l. .
J:s:". . '>O~tt-.
H- It
~lIllTlQN£
_IMITS , lJJL f'.. ~':
,
CHARACTERISTIC 2N6513 UNITS ~(i~lM;~~~6rH I\"j-J-~
Vdc Adc 2N6514
j\;K-~(~
Is, I
VCE VBE
250
Ie IB Min. Typ. Max. Min. Typ. Max.
- - 5 - - -
6 CASE TEMPERATURE (Tel' IOO·C
:
I '
1 :.1
iJ J I
I i'\1t "'°1
['\"
I
P
rnA 0,1 Sr==FVCEO(~AX) • 200 V l2N6510)
ICEO 300 - - - - - 5 6r---r-VCEO lMAX.~ • 250 V l2N6511)
. ICEV
350 -1.5 - - 5 - - - 4r---r- VCEO (MAX.) • 300 V (LN6512, 2~65141
M\
t11 !
. TC = 100°C
400
350
-1.5
-1.5
-
-
-
-
-
10
-
-
-
- -
5 rnA 0012r-~VCr(rcl·350~V{2~5~
COLLECTOR-TO-EMITTER VOLTAGE ( ....CE1- ....
, ill ,J .
400 -1.5 - - - - - 10
. lEBO -6 - - 3 - - 3 rnA Fig. 5 - Maximum operating areas for
. VCEO(sus) 0.2 3001 - - 350 b - - V
all types at 2ff1C and 101PC.
VCER(sus)
RBE = 50n
0.2 350 b - - 400b - -
. VEBO IE =:frnA 6 - - 6 - - -V
. hFE
2N6512.2N6513. 3 4a 10 - 50 10 - 50 <..> 7.5
~
2N6514 3 5a 10 - 50 - - -
. VBE(sat)
G
j
8
2N6512, 2N6513, 4a 0.8 - - 1.7 - - 1.7 V
2N6514 5a 1 - - 1.7 - - -
.. VCE(sat) COLLECTOR-lO-EMITTER SATURATiON VOLTAGE [ ....CE (Iatl] - V
2N6512,2N6513, 43 0.8 - - 1.5 - - 1.5
V
2N6514 5 1 - - 1.5 - - - Fig. 6· Typical collector-to·emitter satur·
All types 7 3 - 1.5 2.5 - 1.5 2.5 ation-voltage characteristics for
. Cobo 50 - 200 50 - 20El pF
all types,
COU.ECTOR-TO-EMITTER VOLTAGE (VCE)-:5 V
VCB=10V,
f = 1 MHz
. "
Ihfe l
f = 1 MHz
10 1 1 - 9 1 - 9 MHz
. ISlb 38 3.16 - - 13·16 - - A
t = 1 s, nonrepetitive 200 0.1 - - 0.1 - -
. tdC
2N6512,2N6513, 4 0.8 - 0.1 0.2 - 0.1 0.2
2N6514 5 1 - 0.1 0.2 - - -
. t,C
2N6512,2N6513, 4 0.8 ~
0.7 1.5 - 0.7 1.5 BASE-TO-f:M(TTER VOLTAGE (VeE) - V
2N6514 5 1 - 0.7 1.5 - - -
. tsC
j.lS
Fig. 7· Typical transfer characteristics for
2N6512,2N6513, 4 0.8 - 3 5 - 3 5 all types.
2N6514 5 1 - 3 5 - - -
. tfC
2N6512, 2N6513, 4 0.8 - 0.5 1.5 - 0.5 1.5
2N6514 5 1 - 0.5 1.5 - - -
. ROJC 20 5 - - 1.46 - - 1.46 °C/W
• Minimum and maximum values and test conditions in b CAUTION: The sustaining voltages V CEO (sus) and
accordance with JEDEC registration data format JC·25 VCER(sus) MUST NOT be measured on a curve
RDF·l. tracer. These sustaining voltages should be measured
a Pulsed; pulse duration = 300 "'S, duty factor =S;;;;2%. by means of the test circuit shown in Fig. 12.
CVCC = 200 V, 181 = 1 82 ,
1 • •
COI.LECTOR-TO-EMlTTER \O..TIG£ tVCE)-V

all types.
--------------------------______________________________________________ 247
2N6510-2N6514
ELECTRICAL CHARACTERISTICS, Case Temperature (TcJ = 2!t'C Unless Otherwise Specified

CONDITIOillS LIMITS "
VOLTAGE CURRENT
CHARACTERISTIC 2N6510 2N6511 UNITS
Vdc Adc
VCE V8E IC 18 Min. Typ. Max. Min. Typ. Max.
150 - - 5 - - -
ICEO rnA
200 - - - - - 5
.. ICEV
250 -1.5 - - 5 - - -
300 -1.5 - - - - - 5 rnA 0.5 I 1.5 2 2.5
. TC= 100°C
250 -1.5 - - 10 - - -
BASE-lO-EMITTER SATURATION VOLTAGE (V BE (1CIQ- V
...
300 -1.5 - - - - - 10 Fig. 9· Typical base·to·emitter saturation·
-6 - - 3 - - voltage characteristics for all types.
. lEBO
VCEO(sus) 0.2 200b ....: - 250b - -
3 rnA
V COLLECTOR SUI¥'l.'t""\IOLTAGE (Veel .200 V

VCER(sus) PULSE DURATION it 25 JL'
RBE=50 n 0.2 250 b - - 300b - - 0.9 DUTY CYCLE $ 1'110

18,"·I az "Ie/l
. VEBO
6 - - 6 - - V
IE = 3 rnA
. hFE
3
3
3a
4a
10
-
-
- -
50 -
10
-
-
-
50
.. VBE(sat)
3a 0.6
4a 0.8
-
-
-
-
1.7
-
-
-
-
-
-
1.7
V
.. 3a 0.6 - - 1.5 - - -
VCE(sat) 4a 0.8 - - - - - 1.0 V
3 4 ~
COLLEeTORCUARENT IIel-A
6 7 8
7a 3 - 1.5 2.5 - 1.5 2.5

.. Cobo
50 - 200 50 - 200 pF
Fig. 10· Typical rise- and fall·time charac·
teristics for all types.
VCB=10V,
f = 1 MHz COUEeTOR-SlJPPLY VOLTAGE (Vce l.2OQ II
... Ihfe l ~e~~~-!2~1'1
f = 1 MHz
10 1 1 - 9 1 - 9 MHz I81·-~B2 'Ie/S
.. ISlb 38 3.16 - - 3.16 - -

t = 1s. nonrepetitive 200 0.1 - - 0.1 - - A
..,
. tdC " I U.I>
4 0.8 -
IU.1
-
U.Z
- - 0.1 0.2
3 0.6 - 10·7 1.5 - - -
trC
4 0.8 - - - - 0.7 1.5
,.
TO NORMALIZE FOA"lN'"S;,O AND 2N6514 I
mllfl·:
'~~1
IlS
tsC
3
4
0.6
0.8
-
- -
3
-
5 -
-
-
3
-5 .
TYPICAL VALUES SHOWN UNDER ELECTRICAL
CHARACTERISTICS AT THE 1£5T CURRENT SPECIFIEO
COLLECTOR CURRENT IIel - A
tfC
3 0.6 - 0.5 1.5 - - - Fig: 11 • Typical storage·time characteristic
4 0.8 - - - - 0.5 1.5
.. ROJC 20 5 - - 1.46 - - 1.46 °CIW
for all types.
..
• MInimum and maximum values and test conditions b CAUTION: The sustaIning voltages VCEO(sus) and
in accordance with JEDEC registration data format VeER (sus) MUST NOT be measured on a curve tracer.
JC·25 RDF·1. Ttlese sustaining voltages should be measured by means
a Pulsed; pulse duration =: 390 Ill, duty factor ~2%. of the test circuit shown in Fig. 12.
c VCC = 200 V,I S1 = 1 S2 '
248 ____________________________ ~ _______________________________________

2N6530-2N6533
Features:
8-Ampere N-P-N Darlington Power Transistors • Operate from Ie with-
out predriver
80, 100, 120 Volts, 60 Watts Gain of 1000 at 3 A (2N6533) • Low leakage at high
Gain of 1000 at 5 A (2N6530, 2N6532) Gain of 500 at 3 A (2N6531) temperature
• High reverse second-
The RCA-2N6530. 2N6531. 2N6532. and breakdown capabil ity
2N6533· are monolithic n-p-n silicon Dar- r-----------,
lington transistors designed for power appli- I I Applications:
I I
cations at low and medium frequencies. The I I • Power switch ing
double epitaxial construction of these de-
vices provides good forward and reverse
II I
I
•
•
Hammer drivers
Series and shunt regulators
second-breakdown characteristics. Their high IL _.l2kO _loon
_ _ _ _ _ _ _ _ ..J
I • Audio amplifiers
gain allows them to be driven directly from
integrated circuits.
• Formerly RCA Oev. Nos. TA8904C. TA8904D.

TA8904B. and TA8904A. respectively. Fig. 1 - Schematic diagram for all types.
c
(FLANGE)
BOTTOM VIEW
MAXIMUM RATINGS, Absolute-Maximum Values: 92C5-27519
2N6530 2N6531 2N6532 2N6533

JEDEC TO-22OAB
·V CBO . 80 100 100 120 V
VCERlsus) (See dimensional oulllne "S".)
RBE~100n 80 100 100 120 V
VCEolsus) 80 100 100 120 V
·VCEvlsus)
VBE =-1.5 V 80 100 100 120 V
·V EBO 5 5 5 5 V
·I C 8 8 8 8 A
ICM' 15 15 15 15 A
·I B 0.25 0.25 0.25 0.25 A
·PT
Up to 25°C 65 65 65 65 W
Above 25°C. See Fig. 2
·TJ • Tstg - - - - - - - -65 to+150 - - - - - - - ()C
·T L
At distances ;;;. 1/8 in. 13.17 mm)
from case for 10 5 max. 235 °c
* In accordance with JEDEC registration data format JS.6. RDF4.
, 1)0,
~
'r---r---t--rt-r---r---t--r+1 J: COLLECTOR-lO-EMITTER ~OI..TAGE (VCE)') v
2
~
, 1
1
$ 10:
~
~
.. -di""
§ -"""-1
2
,/ I.
! 10',. "---~~~ ~i)..p0
~
...
i V-:,-'ll
4
1\
,
25 ~ nI 100 125 150
CASE TEMPERATURE 1Tel--C
ITS 200
10' :2 .. &. 10"
NUMau OF THERMAL CYCLES
:2 ..
92C$·201"
, • IO~
~
10'
0.1
0"
, ..
11
, I
, ." I)
COlI..ECTOR CUftMN""IC1-A
\, ." KlO
Fig_ 2 - DiSSipation derating curve for Fig. 3 - Therma/-cycling rating chart Fig. 4 - Typical de beta characteristics
all types. for all types. for all types.
__________________________________________ ~--~---------- ______--___ 249

2N6530-2N6533
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC' = 2!PC unless COLLECTOR CURRENT 'Ie)'IA
COLLECTOR-fO-EMITTER VOLTAGE (vcEl.~v
otherwise specified CASE TEMPERATURE (Tc)·25·C

2N6530 2N6531 UNITS
SYMBOL Vde ,de
BO a - 1 - -
ICEO
a - - -
'CEV
100
BO -1.5 - 0.5 -
1
- rnA
10
.. 0.1
... 10
100 -1.5 - - - 0.5 FREQUENCY (f)-MHZ
TC= 125°C
BO -1.5 - 5 - - Fig. 5· Typical small·signal current gain
100 -1.5 - - - 5 for all types.
lEBO -5 a - 5 - 5 rnA
3 5a 1,000 10,000 - - COLLECTOR. TO-EMITTER VOLTAGE {V CE )-3'1
hFE 3 3a - - 500 10,000

3 Ba 100 5,000 100 5,000
VCEO(sus) 0.2 a BOb - 100b -
VCER(sus)
0.2 BOb - 100b - V
RBE = 100 Q
VCEV(sus) -1.5 0.2 BOb - 100b - §
I
3 5a - 2.B - -
VBE 3 3a - - - 2.B V
3 Ba - 4.5' - 4.5" BASE· TO-EMITTER VOlTAGE (YBEI-V
3a 0.006 - - - 3
VCE(sat) 5a 0.01 - 2 - - V Fig. 6· Typical input characteristics for
Ba O.OB - 3" - 3' all types.
sa - - - 4
V
VF
sa - 5 - -
hfe
f= 1 kHz
5 1 1,000 - 1,000 -
Ihfel
f = 1 MHz
5 1 20 - 20 -
Cobo
VCB=10V - 200 - 200 pF
f = 1 MHz
ISlb 24 2.7 - 2.7 - A

t = 0.5 s, 2 ,
nonrep. COLLECTOR-TO-EMITTER VOLTAGE IVCEI-v
ES/b Fig. 7· Typical output characteristics for

L= 12 rnH -1.5 4.5 120 - 120 - rnJ all tyP,l's.
RBE = 100 Q
ROJC - 1.92 - 1.92 °CIW
* In accordance with JEDEC registration data format JS-6, ROF-4.

a Pulsed, pulse duration = 300,,",5, duty factor ::s;;;; 2%.
b CAUTION: Sustaining voltages VCEOlsus), VCERlsus), and VCEVlsus) MUST NOTbe measured on
a curve tracer.
250 ____________________________________________________________________
POWER TRANSISTORS
2N6530-2N6533
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C unless

otherwise specified
"FE'!'OOO
CHARACTERISTIC VOLTAGE CURRENT TC'IOO'C
2N6532 2N6533 UNITS
SYMBOL Vdc Adc
VCE VBE IC 18 Min. Max. Min. Max. IOO,IOO-C
120 0 - - - 1
'CEO 100 0 - 1 - -
120 -1.5 - - - 0.5
mA
4 & 8 I') 12
ICEV 100 -1.5 - 0.5 - - COLLECTOR CURRENT " cl - .
120 -1.5 - - - 5 Fig. 8· Typical saturation characteristics

TC= 125°C
100 -1.5 - 5 - - for all types.
lEBO -5 0 - 5 - 5 mA
3 3a - - 1,000 10,000 COLl.ECTOR-TO-EM1TTER YOLTAGEIVCE"lV
:il: 'J::
hFE 3
3
5a
Ba
1,000
100
10,000
5,000
-
100
-
5,000 i ..
"0
lli ' II
II
I!
VCEO(sus)
VCER(sus)
0.2
0.2
0 100b
100b
-
-
120b
120b
-
- V
f ,.
a
10.0
.tJt.1:l
-<
:!,~c.
I',
!
RBE = lOOn ~ ~o I
VCEV(sUS) -1.5 0.2 100b - 120b - ~
8
'.0
... /~
<1
.rt
3 3a - - - 2.B
VBE 3 5a - 2.B - - V ,
3 Ba - 4.5" - 4.5"
0
•
BASE-TO-EMITTER VOLTAGE(VBEI-V •
3a 0.006 - - - 2
VCE(sat) 5a 0.01 - 2 - - V
for all types.
Sa O.OS - 3' - 3"
sa - - - 4
V
VF
sa - 5 - - , COLLECTOR SUPPLY VOLTAGE IVec"ZOv
.
181··182·ICl5oo
hfe
f = 1 kHz
5 1 1,000 - 1,000 - ..- ,..- ......
/' "
Ihfel 5 1 20 - 20 - ,
f = 1 MHz
........ ';.-
-
Cobo
,/
-< I
VCS = 10 V - 200 - 200 pF , .......... ~.
. f = 1 MHz
ISlb
0
,
.+
t = 0.5 s,
24 2.7 - 2.7 - A
2 3 4
COLLECTOR CURftENTIIc1-A
5 6 7 8 9 10
nonrep. Fig. 10· Typical saturated switchinlrtime

ES/b
L=12mH -1.5 4.5 120 - 120 - mJ
RBE = lOOn
ROJC - 1.92 - 1.92 oCIW
• In accordance with JEDEC registration data format JS~6. RDF-4.

a Pulsed, pulse duration = 300 IlS, duty factor ~ 2%.
b CAUTION: Sustaining voltage. VCEO(sus), VCER ('u,1. and VCEV(su.) M:JST NOT be measured
on a curve tracer.
____~----------__---------------------------------------------------251
POWER TRANSISTORS
2N6530-2N6533
CASE TEMPERATURE iTC )=25"C

(CURVES MUST BE DERATED LINEAR LY
6 WITH INCREASE IN TEMPERATURE)
6 801ck!20
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V 92CS-24603RI
Fig. 11 - Maximum operating areas for all types at case temperature of 2!f1C.
COLLECTOR-TD-EMITTER VOLTAGE (VCE)-V 92CS-24604RI
Fig. 12 - Maximum operating areas for all types at case temperature of 10r:fJC.
252-----------------------------------------------------------------------
2N6542, 2N6544, 2N6546
3-, 5-, and 10-A Power- Switching Transistors Features:

.100% High Temperature Tested for
High-Voltage N-P-N Types for Off- Line Power Supplies and Other High- '100°C Parameters
Voltage Switching Applications • Fast Switching Speed
• High Voltage Rating:
The RCA-2N6542, 2N6544, and 2N6546 tested for parameters that are eassential to VCEX = 350 V
series of silicon n-p-n power transistors the design to high·power switching circuits. • Low VCE(sat) at IC = 3-, 5-, and 10-A
feature high-voltage capability, fast switching Switching times, including inductive turn·off • Steel Hermetic TO-204MA Package
speeds, and low saturation voltages, together time, and ~aturation voltages are characterized
with high safe-operating area (SOA) ratings. at 100°C;aswell as at 25°C, to provide infor- Applications:
They are specially designed for off-line mation necessary for worst·case design. • Off-Line Power Supplies
power supplies, converter circuits and pulse· The 2N6542, 2N6544 and 2N6546 tran· • High Voltage Inverters
width-modulated regulators. These high-volt- sistors are supplied in steel JEDEC TQ.204MA • Switching Regulators
age, high-speed transistors are 100·per·cent hermetic packages.
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6542 2N6544 2N6546 TERMINAL DESIGNATIONS

650 V
• V CBO '
• V CEV
V BE =-1.5V 650 V
* VCExlClamped)
V BE = -1.5 V 350 V
* VCEO ' 300 V
* V EBO ' i! V
le lsat ). 3 5 10 A
• IC'
5 8 15 A
10 16 30 A JEDEe TO-204MA
ICM
* lB' 5 8 10 A
* PT 0
(See dImensIonal oulllne "A".)
T C up to 25 0C . . ~ . 100 125 175 W
T C above 25 C. derate Imearly 0.57 0.714 wtc
* T stg ' TJ . -65 to 200 °e
* TL
At distance~1/8 in. (3.17 mm) from seating
plane for 5 s max. . 275 °e
* In accordance with JEDEC·registration data.
I
CASE TEMPERATURE 1Tcl-·C
Fig. 2 - Dissipation and JSIb derating curves

for all types.
IO~I-t_-+__+-I+-f-+_-+_+-+-+-I-----l
COt.LECTOR-TO-EIIITTER VOLTAGEIVCEI- V
'10 4 4 I '105 4 6 '106
92CM-30!S32
Fig. 1 - Maximum operating areas for type Fig. 3 - Thermal-cycling chart for
2N6542 ITC - 25° c/. type 2N6542.
__--______________________________________________________________ 253
2N6542,2N6544;2N6546
··
'00
ELECTRICAL CHARACTERISTICS
TEST CONDITIONS LIMITS •I
\.
VOLTAGE CURRENT 2N6542 2N6544 2N6546 lz "'""'' '",
''' ~ .. """(-.
i ·
CHARACTERISTIC Units ~
Vdc Adc c
2
}~
TC = 25"C
VCEIVeE IC I Ie Min·IMax. Min·IM8x. Min.1 M8x. iii
a
i·
" ~ll
~' ~
~"
,,"+<+.
~ .,
~ ~\
I' rn
* 'CEV 650 -1.5 - 0.5 - 0.5 - 1
mA
0
*
*
'EBO
VCEO(sus)b
-8 0
0.18
-
300 -
1 -
300 -
1 -
300 -
1
V
'0
. . .~ .. · . .. i'-,· .
• 0
Ir
'0'
&
10'
NUMBER OF THERMAl. CYCLES
IdS
,2C5-2'025
* hFE 2 3a 7 35 - - - - Fig. 4 - Thermal-cycling chart for

type 2N6544.
2 1.58, 12 60 - - - -
3 58 - - 7 35 - -
3
2
2.5a
loa
-
-
-
-
12
-
60
-
-
6
-
30 ·
•I
58 - - - -
·
2 12 60
t
* VBE(sat) 38 0.6 - 1.4 - - - - ~ I-
sa ~ <'4'"
1 - - - 1.6 - -
~;i~ ~~,..
100
~
.
II
loa 2 - - - - - 1.6 i! • 1< .... 0
1::'-'...,. ~
* VCE(sat) 3a 0.6 - 1 - - - - . 1\
~
~
- V
1\ 1"'- ~
5a
88
1
2
-
- -
5 -
-
-
1.5
5
-
- -
~
· \% III. .:'101' . " . ·."" i"
* 'Slb t = 1s 100
108
15a
2
3
-
-
0.2
-
-
-
-
0.2
-
-
-
-
-
0.2
1.5
-
5
A
· • '10"
NuMBER OF THERMAL CYCLES
• • 10
'2CI-1t4'"
Fig. 5 - Thermal-cycle rating chart for

* fT f = 1 MHz 10 0.2 6 28 - - - - type 2N6546.
10 0.3 - - 6 28 - - MHz
10 0.5 - - - - 6 28
2
* Cobo f = 1 MHz lad 50 200 75 300 125 500 pF
* tde ·3 0.6 - 0.05 - - - - ; .,

5
10
1
2
-
-
-
-
-
-
0.05
-
-
-
-
0.05
~
~i
·. V
IL
I-o-r
* t re 3 0.6 - 0.7 - - - !~
5 1 - - - 1 - - .
I!!i
.,
4
10 2 - - - - - 1 s V
I ·V
p.s
* tse 3 0.6 - 4 - - - -
· ... . ... · ... . ...

5 1 - - - 4 - -
10 2 - - - - - 4 0.1
0.001 0.01 0.1 10
* tfe 3 0.6 - 0.8 - - - - PULSE nTH (lp)-'
5 1 - - - 1 - - Fig. 6 - Typical thermal-response characteristic

for type. 2N6542 and 2N6544.
10 2 - - - - - 0.7
~ IUo
~ :
~ z
I':.
~ ........
z
la,
I ···
0
· ... . · ...
Ii!
0.01
ODOI QOI QI
• .0
• • 00 10
PtASE WIDTH (tpJ - . UCI-IOII?
Fig. 7 - Typical therms/-response characteristic for
type 2N6546.
254 _______________________________________________________________________
POWER TRANSISTORS
2N6542,2N6544,2N6546
_100
~
;;
.. COLLECTOR-TO-EMITTER VOL TAGE (VCE)- 2V
I I II I
r-~
VOLTAGE CURRENT
~
o • -+JI
><Jptl~
CHARACTERISTIC
V de Ade
2N6542 2N6544 2N6546 Units
. ,V--r-
z
o
CAs[
I?"'r:
~t c-
s.
~
VCEIVBE IC I IB Min.1 Max. Min.1 Max. Min.1 Max.
z
w I---
0
o
../
t-
u "'''O°c ,
···
10
- - I"-
* ICEV 650 -1.5 2.5 - 2.5 4
; ......
mA
~
J
· .. · ..
* ICER RBE = 50£1 650 - 3 - 3 - 5 g
, ,I
* VCEX(Sus)b,e 01 I
COLLECTOR CURRENT CIC)-A
10
VCC= 20 V 2.6 a 350 - - - - - Fig. 8 - Typical dc beta characteristics for

L=1S0IlH, type 2N6542.
RC = 0.05£1 4.5a - - 350 - - -
Velamp = Rated
200 COLLECTOR -TO- EMITTER
0 VOLTAGE (VCE'- 3 V
r··
VCEX sa - - - - 350 - V ~
Vclamp = Rated
VCEO -100 V 5a 200 - - - - - ~C
sa - - 200 - - - ~~4
- - - I~ ~
~
15a - 200 -
* VBE(sat) 3a 0.6 - 1.4 - - - - ~ · ITC1--~

. -
~ r\
5a 1 - - - 1.6 - - ; CASE TEMPERATURE
~ 1 1 1 -I 1
10a 2 - - - - - 1.6 10
V g
·· . . . . -"". . 11
* VCE(sat) 3a
5a
10a
0.6
1
2
-
-
-
-
-
2 -
-
-
-
2.5
-
-
-
-
-
-
2.5
~
· · COLLECTOR CURRENT (leI-A
I ~

type 2N6544.
* 1st -5 3 0.6 - 4 - - - -
-5 5 1 - - - 4 - -
-5 10 2 - - - - - 5
IlS
iNa, COLLECTOR -TO-EMITTER VOLTAGE (VeE)' 3V
* 1f t -5 3 0.6 - 0.8 - - - - 0
"J
~ C4Se-,.
-5 5 1 - - - 0.9 - - .t--~~.Ij>4,.J. ---- t - - j -
-5 10 2 - - - - - 1.5 ~
N'9e- r
g, 2S·c j"'.."';
~/OOo
* ROJC - 1.75 - 1.4 - 1 °CIW ~
Z c
l'
~
~
• In accordance with JEDEC registration data. C Vee = 20 V, L = 180 IlH, Re = 0.05 n ac 10 -40·C
!
a Pulsed: pulse duration;o; 300 J.lS, duty factor ~2%. d V CB value , t-
~~ ,
I
b CAUTION: The sustaining voltage VCEO(sus} B Resistive load, Vee '= 250 V. tp ::= 100 MS, ~
and VCEX(sus) MUST NOT be measured on a 18 , = -1 82 g
curve tracer. f Inductive load, Vclamp = Rated VCEX(sus),
18
1
= -l e/5, L = 180 IlH, Re = 0.05 n, Vee
.
= 20 V
,
·,, 10
COLLECTOR CURRENT (lcl-A
,
·,, 9ZCS-303a5
100
type 2N6546.
.
I, IB- leiS
0 TC'-40'C
~
~
TC ·12~·C
~ TC • 25-C
~l·~·
~~
~-
t:~
~~
A ~
~.c
2
~~ ~ ~<J<r.~\""(Y'''o
~gol
~~~~
~
? '\t.....'?
8 ••<

. . nCS-29983~1
10
I
COLLECTOR CURRENTIIcl-A
'2tS-]0311 COLLECTOR CURRENT IIcl-A
10
Fig. 11 - Typical collector-ta-emitter saturation Fig. 13 - Typical base-to-emittersaturation voltage

voltage as a function of collector cur- Fig. 12 - Typical collector-to-emitter saturation as a function of collector current for
rent for types 2N6542 and 2N6544. voltage characteristics for type 2N6546. types 2N6542 and 2N6544.
__ ~ ______________________________________________________________ 255
POWER TRANSISTORS
2N6542,2N6544,2N6546
4 COLLECTOR -TO-EMITTER
VOLTAGE (VCE'-3V
I
~
,
~
E>
~,
!::-
~i'
-
r.
_40.c,
~
,r-- \"fC \.\'l.~·C
.~"p·:Rr·E
,
COLLECTOR CURRENT II,;-A
. ."
Fig. 76 - Typical base-to-emitter voltage as
a function of collector current for
4 IS'· IC/5
~>
C.§J..
~."
Z
~~
~-
~~ I ~
~~ ·40·C -~~.\oO'C
.~l,·
w> •
ii r-wc k;;;.,Oft'j~1C''1
. ··ft I
COLLECTOR-TO-ENITTER VOLTAGE (Vc£)- Y '2CM-30533
n.
, . ., 10
COLLECTOR CURflENT(Icl-A
, .. tOO
92C5-30376
Fig. 14 - Maximum operating areas for type 2N6546 ITC == 25°C). Fig. 17 - Typical bsse-to-emitter saturation
voltage characteristics for type
2N6546.
COLLECTOR-lO-EMITTER VOLTAGE (VCEI-V - 92'5-29986

COLLECTOR-TO-EMITTER VOLTAGE(VcE'- v 92CM-30531
Fig. 15 - Maximum operating areas for type COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V

2N6544 ITC =. 25°C). 92CS-30314
type 2N6546.
256 ________________________________________________________________
2N6576,2N6577,2N6578
15-Ampere N-P-N Darlington Features:
.Power Transistors • Operates from Ie without predriver

60, 90, 120 Volts, 120 Watts
Gain of 2000 at 4 A Applications:
• Power switch ing
The 2N6576, 2N6577, and 2N6578 are breakdown capability; their high gain makes • Hammer drivers
monolithic n-p-n silicon Darlington tran- it possible for them to be driven directly from • Series and shunt regulators
sistors designed for low- and medium-fre- integrated circuits.
quency power applications. The double • Audio amplifiers
epitaxial construction of these devices pro- All types utilize the steel JEDEC TO-204MAI
vides good forward and reverse second- TO-3 hermetic package.

2N6576 2N6577 2N6578
* v CBO · 60 90 120 V
* c
'0
VCEO(sus) 60 90 120 V
7 V
• V EBO ·
* IC 15 A
ICM 30 A
'" 18 0.25 A
* PT
TC ~250C 120 W
T C >25 0 C See Fig. 2
_ _ _ _ -65 to 200 _ _ _ _
* T stg • T J °c JEDEC TO-204MA
• TL (See dimensional oulllne "AU_)

At distances ~ 1/32 in. (0.8 mm) from seating
plane for lOs max. 235 °c
------------,
I
I
I
I
I
I
NOTE C~RENT DERATING AT CONSTANT

VOLTAGE APPLIES ()liLY 10 THE OISSIPATlON-
LIMITED PORTION AND THE IS/b -LIMITED
PDATION OF MAXIMUM OPERATING AREA
~~~~I~J>~A~l~~~A¥c T~ix F
COLLECTOR-lO-EMITTER VOLTAGE (VCE)- V

92CM-~1l28 175 200
CASE TEMPERATURE (TCI-·C
1 - Maximum operating areas for alf types. Fig. 3 - Derating curves for all types.
___________________________________________________________________________ 257
2N6576, 2N6577, 2N6578

ELECTRICAL CHARACTERISTICS, At Case Temperature (T cJ = 2!PC Unless Otherwise Specified
CHARAC- U
TERISTic VOLTAGE CURRENT N
Vdc Adc 2N6576 2N6577 2N6578 I
SYMBOL
T
VCE VEB VBE IC IS MIN. MAX. MIN. MAX. MIN. MAX. S
* ICBO ooa - 0.5 - - - -

90 a - - - 0.5 - -
120 a - - - - - 0.5
* ICEO 60 0 - 1 - - - -
90 0 - - - 1 - -
120 0 - - - - - 1
rnA
ICER 60 - 5 - - - -
RBE = 10K 90 - - - 5 - -
* TC=150 o C 120 - - - - - 5
ICEX 60 -1.5 - 5 - - - -
TC=1750 C 90 -1.5 - - - 5 - -
120 -1.5 - - - - - 5
* lEBO 7 0 - 7.5 - 7.5 - 7.5 rnA
VCEO(sus) 0.2b 0 60 - 90 - 120 - V
* hFE 3 O.4 b 200 - 200 - 200 -

3 4b 2000 20000 2000 20000 2000 20000
3 lOb 500 5000 500 5000 500 5000
4 15b 100 - 100 - 100 -
10 O.lb - 3.5 - 3.5 - 3.5
* VBE(sat)
15 0.15 b - 4.5 - 4.5 - 4.5
V
lOb 0.1 - 2.8 - 2.8 - 2.8

* VCE(sat)
15b 0.15 - 4 - 4 - 4
V
VF -15 - 4.5 - 4.5 - 4.5
* hfe
f=l MHz 3 3 4 40 4 40 4 40
* td C 10 0.1 - 0.15 - 0.15 - 0.15

* t,.c 10 0.1 - 1 - 1 - 1
/ls
* tf tsC 10 O.ld - 2 - 2 - 2
* 10 O.ld - 7 - 7 - 7
ISlb
t=l s, 20 6 - 6 - 6 - A
non rep.
ROJC - 1.46 - 1.46 - 1.46 oCIW

• In accordance with JEDEC registration data. C Vee = 30 V, tp = 300 "s. duty cycle = 2%. '
• VeB value. d IS1 = -IS 2 ,
b Pulsed: Pulse duration = 300 J.lS, duty factor = 1.8%.
258 _____________________________________________________________
2N6576,2N6577,2N6578
., COLLECTOfI-TO-EMITTER VOLTIoGE IYeE'- 3Y
'f-- - -
r-I-
3.5
COLLECTOR SUPPLY VOLlAs[
I e · -IB
'Yeel·lOY
·IC / :500,TC·25 "C
10: _ _ I- --r--~
... ' !---;4l: .... z.'.I-"""=---+--+-t---+-+---t~N;:1

~ 4 <1 f
~~<
2 \'\~ ~
~ 2:
10; ,"
.,~~1 1\\ o.• r----+-----1r---+--t-t---f"'t..l;;j
~t-'
~,
0.1
, . , '1 , .• '1
COLLECTOR CURRENT 11,I-A
\
. • '1
SIIts·aotlili. COLLECTOR CURRENT (lei-A
7 8 9 10
BASE-lO-EMITTER VOLTAGE (YeEI-Y
92t5- 199Z0RI
Fig. 4 - Typical dc-beta characteristics for all types.
Fig. 5 - Typical saturated switching time Fig. 6 - Typical transfe~ characteristics for all types.
100,25·C
loo:iso-c
·IC'IBIFORCED hFEI·IOOO
·~ Te· 150 • C
I8
o I 2 3 4 :5 6 7 B
COLLECTOR-TQ-EM'TTER SATURATION VOLTAGE [VeE Ilat I] - V
COLLECTOR-lO-EMITTER VOLTAGE IVeEI-v 92CS'208~6 FREOUENCYIII-MHz
Fig. 7 - Typical output characteristics for all types. Fig. 8 - Typical saturation characteristics for all types. Fig. 9 - Typical small-signal gain for all types.
1 1U
I
~ 10
1.'
BASE-TO-EMITTER VOLTAGE (VBEI-V
Fig. 10 - Typical input characteristics forall types.
Vee. 30V
Fig. 12 - Phase relationship between input current

and output current showing reference
points for specification of switching
times (test circuit shown in Fig. 11).
PULSE DURATION
20,.. POSITIVE VOLTAGE
20,.. NEGATIVE VOLTAGE
REP. RATE .200 HI
... Ial ANa Ia2 ARE MEASURED WITH TEKTRONIX CURRENT

PRoaE P6019 AND TYPE 134 AMPLIFIER,OR EQUIVALENT
Fig. 11 - Circuit used to measure saturated·switching

times.
_____________________________________________________________________ 259
POWER TRANSISTORS
2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E
Silicon P-N-P Epitaxial-Base High-Power Transistors

Features:
Rugged Devices, Broadly Applicable
• High-dissipation capability
For Industrial and Commercial Use • Low saturation voltages
The RCA-2N6609, MJ15004, RCA9116C, They differ in voltage ratings and in the • f'r = 2 MHz
RCA91160, and RCA9116E are ballasted currents at which the parameters are con+ • High gain at high current
epitaxial-base silicon p-n-p transistors featur- trolled. All are supplied in the steel JEOEC
ing high gain at high current. They may be TO-204MA pack-ages.
used as complements to the n-p-n types Applications:
RCA3773, MJ15003, RCA8638C, RCA
86380, and RCA8638E, respectively. • Series and shunt regulators
MAXIMUM RATINGS, Absolute-Maximum Values: • Power·switching circuits
2N6609 MJ15004 RCA9116C RCA9116D RCA9116E
-140 -140
• VCSO- -160 -120 -100 V
VCEX('u,)
V SE = -1.5 V; RSE = 100 n -160 V
VCERI,u,)
RSE = 100 n. -150 -150 -150 -130 -110 V TERMINAL DESIGNATIONS
• VCEO('u,) -140 -140 -140 -120 -100 V
• V ESO ' -7 -5 V
• IC' -16 -20 A
• IS -4 -5 A
* PT 0
AtTC?25C 150 250 200 200 200 W
At T C >2SoC Derate linearly 0.857 1.43 ----1.14 -----W/"C
* T stg , T J - - - - - - -65 to 200 °c
* TL
At distance ~ 1/32 in. (D.8 mm) from
seating plane for lOs max. . 265 230
* 2N·type in accordance with JEDEC registration data format JS25RDF1, Issue 1. JEDEC TO-204MA
(Se. dimensional oullin. "A"_)
1000, COLLECTOR-TO-EMITTER VOLTAGE (VCE)--Z V

~
r---t-
6 I J.lJJ5- - -
=•
0
II I
~
.
2
~1008
HI. 125- I
n~~c~:~~~~~URE ~ -
---~-:::::::
~ -
! 4
! I I I"
~
.. I I
2
~ 10 "
a '-
0
H-
-f
~
~ , I I
~ I
-0,01 . .
, "I , "-0.1
, ., , , .I
COLLECTOR CURRENT \1.C)-A
-10 " -100
Fig. 2- Typical dc beta characteristics as a function
COLLECTOR-TO-EMITTER VOLTAGE(VCEI- v of collector current for all types.
92CS-30076
260
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tci = 25°C Unless Otherwise

Specified
VOLTAGE CUR·
CHARAC· Vdc RENT UNITS
TERISTIC Adc 2N6609 MJ15004
VCE VBE IC Min. Max. Min. Max.
ICBO -160a - -4 - -
* -140 a - -2 - -1
ICEX -140 1.S - - - -0.1 COLLECTOR CURRENT (lC)-A
ICEX -140 1.S - - - -2 Fig. 3 - Typical saturation voltage characteristics

for al/ types.
TC = lS0°C
* ICEV -140 1.S - -2 - -
rnA
* ICEV -140 1.5 - -10 - -
TC= lS0°C
ICEO -140 - - - -0.25
IB= 0
* -120 - -10 - -
lEBO
* -7 - -S - -
-5 - - - -0.1
* hFE -4 -Bc lS 60 - -
* -4 -16 c S - - -
-2 -SC - - 2S 150
-2 -10C - - 10 -
VCEXlsus)b 1.S -0.2 -160 - - -
RBE = lOOn
VCERlsus)b
-0.2 -lS0 - -150 -
RBE< lOon
* VCEOlsus)b -0.2 -140 - -140 -
VEBO 0 -7 - -Sd -
IE=-l rnA
-4 -Bc - -2.2 - - V
VBE
-2 -5C - - - -2
VCElsat)
* IB =-3.2A -16 c - -4 - - I
* =-O.BA -Bc - -1.4 - - BASE-lO-EMITTER VOLTAGE (VBEI-V
= -O.SA -5c - - - -1
Fig. 5 - Typical transfer characteristics for all types.
IS/b -100 -l.S - -1 -
tp = 1 s -SO - - -S - A
nonrep.
Ihfe l
* f = 0.05 -4 -1 4 - - -
= 0.5 MHz -10 -0.5 4 - 4 -
fT 2 - 2 - MHz
* hfe -4 -1 40 - - -
f = 1 kHz
Cob -loa - 1000 - 1000 pF
f=O.l MHz
ROJC -10 -10 - 1.17 - 0.7 °C/W
See page 252 for footnotes.

Fig. 6 - Typical saturated-switching times for
all types.
____________________________________________________________________ 261
POWERTRANSISTORS __________________ ~ ____________________________________
ELECTRICAL CHARACTERISTICS, at Case Temperature (TcJ =25"C

Unless Otherwise Specified (Cant'd)
.'
TEST CONDITIONS
LIMITS ,.
VOLTAGE CUR·
CHARAC· Vdc RENT
RCA9116C RCA9116D RCA9116E UNITS
TERISTIC Adc
VCE VBE IC Min. Max. Min. Max. Min. Max.
-14oa - -1 - - - -
ICBO -120a - - - -1 - -
-100a - - - - - -1
-140 1.5 - -1 - - - -
ICEX -120 1.5 - - - -1 - -
ICEX -140 1.5 - -5 - - - -
TC= 150°C -120 1.5 - - - -5 - - mA
ICEO -70 - -1 - - - -
IB =0 -60 - - .- -1 - -
lEBO -5 - -1 - -1 - -1
hFE -2 -5c 25 150 25 150 - -
-2 -7.5c - - - - 10 100
-2 -lOc 10 - 10 - - -
VCER(sus)b
-0.2 -150 - -130 - -110 -
RBE<100n
VCEO(sus)b -0.2 -140 - -120 - -100 -
VEBO 0 -5 - -5 - -5 - V
IE=-l mA
VBE -2 -7.5c - - - - - -3
-2 -5c -, -2 - -2 - -
VCE(sat)
IB =-0.75A -7.5c - - - - - -1.5
=-0.5A -5c - -1 - -1 - -
ISlb
tp = 1 s -35 -5.71 - -5.71 - - -
A
nonrep. -25 - - - - -8 -
Ihle l -10 -0.5 4 - 4 - -
4
1= 0.5 MHz
IT 2 - 2 - 2 - MHz
Cob -loa - 1000 - 1000 - 1000 pF
1= 0.1 MHz
ROJC -10 -10 - 0.875 - 0.875 - 0.875 °C/W
* 2N-types in ac~ordance with JEDEC registration data format JS25 RDF1, Issue 1.
a V CB b CAUTION: Sustaining voltages VCEX(sus), VCER(sus). and C Pulsed; pulse duration = 300Jls,
VCEOlsus) MUST NOT be measured on a curve tracer. See duty factor = 1.8%.
Figs. 7 and 8. d Measured at IE = -0.1 mAo
262 _______________________________________________________________________
POWER TRANSISTORS
27.Q.2W
6 SERIES-CONNECTED
J. W. MILLER NO. 2661, OSCILLOSCOPE INPUT
OR EQUIVALENT HEWLETT -PACKARD
MODEL NO. 1308.
OR EQUIVALENT COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
CLARE MERCURY RELAY 14
MODEL NO. HGP-IQ45
OR EQUIVALENT
+ - - - - - - 0 HORIZ.
~ 120V
In
NON. IND.
60Hz +---~--oGND
o TO &JV I
(500 mAl VCER(....) VCEO(SU')
OR IC
VCEX (sus)
100Q t-----oVERT.
NOTE: The "'staIning Voltages VCEol .... J. VCER(OUI) Dr, VCEX( .... I) ...
lC""ptablewhontMnlcefallstotheleftlndbek>wpo'nt"A".(Fo.valu..
1.5 ofcurrentand.-oItage.... Electr;caIChlrKtetist"::I.
VCEX(SUS) 92CS-'OI44
Fig. 8 - Oscilloscope display for measurement of

L • 21 mH FOR VeEa( IUS)
VCEO(SUS) 0
AND VeER (sus)
sustaining voltages. (Test circuit shown
L-1mH FOR YCExhUll in Fig. 7).
nCS-!0143
R·IOOn
Fig. 7 - Circuit used to measure sustaining voltages

VCEO(SUS), VCER(sus), and VCEX(SUS)
for aTl-types.
263
2N6648,2N6649,2N6650
10-Ampere P-N-P Darlington Power Transistors Features:
• Operates from Ie without predriver
40-60-80 Volts, 70 Watts • High reverse second-breakdown capability
,---------'1 • Power switching • Audio amplifiers
• Hammer drivers
The2N6648, 2N6649 and 2N6650 are mono-
I I • Series and shunt regulators
lithic silicon p-n-p Darlington transistors , I
designed for low- and medium-frequency
power applications. The high gain of these
: I TERMINAL DESIGNATIONS
I I
devices makes it possible for them to be
IL _ _ _ _ _ _ _ _ _ -.JI
driven directly from integrated circuits.
The 2N6648, 2N6649 and 2N6650 are com-
plementary to the 2N6383, 2N6384, and
2N6385 respectively. Fig. 1 - Schematic diagram for all types.
They are a/l supplied in hermetic steel JEDEC TD-204MA

JEDEC TO-204MA packages.
(See dimensional outline "A".)
MAXIMUM RATINGS, 2N6648 2N6649 2N6650 100,

Absolute-Maximum Values: 6
* v CBO ............................ .. -40 --£0 --£0 V i". III
•, 4
r---<l,~~1
VCER(sus).
RBE = 100 n .................... . -40 -60 --£0 V t , f\
* VCEO(SUS) ........................ . -40 -60 --£0 V Ii \ [\ '"~·,Go
VCEV(sus) : 'e- 10
"'<'
~
,~ ' -':-1<
0
V BE =-1.5V .................... . -40 -60 --£0 V 61- ~
* -5 -5 '" 4
~ '9'~~tq,.. co.
K~b '0. -
V EBO ............................. . -5 V ~.
~ ,
(>.1.
* 'C ............................... .. -10 -10 -10 A
~I--
, l'f, , 'N I ~
'CM ............................... . -15 -15 -15 A
* 'B ................................ . -0.25 -0.25 -0.25 A
1
103
4 6 ,
104
, Q
4 6'
10 5
6 ,
* PT NUMBER OF THERMAL CYCLES
TC .;;; 25°C ...................... . 70 70 70 W

TC > 25°C ........... Derate linearly 0.56 WPC Fig. 2 - Thermal-cycling rating chart for
al/ types.
* Tstg • TJ .......................... . -65 to +150 °c
* TL
At distances #: 1/32 in. (0.8 mm) from
seating plane for 10 s max. . ........ . 235 °c
* In accordance with JEDEC registration data format (JS-6 RDF·4)

S2CS·2S323
Fig. 4 - Maximum operating areas for all types at T e= 100oe. ___

264 __________________________________________________________________
2N6648,2N6649,2N6550
ELECTRICAL CHARACTERISTICS,AtCase Temperature (TC) = 25°C Unless Otherwise Specified
TEST CONDITIONS
LIMITS
2N6648 2N6649 2N6650 UNITS
V dc Adc
ICEO -40 0 - -1 - - - -
-60 0 - - - -1 - - mA
-80 0 - - - - - -1
ICEV
-~O
-60
-80
1.5
1.5
1.5
-
-
-
-0.3
-
-
-
-
-
-
-0.3
-
-
-
-
-0.3
-
-I
COLLECTOR CURRENTltcl-A
... -10
-40 1.5 - -3 - - - -
TC= 150 0 C -60 1.5 - - - -3 - - Fig. 5 - Typical de beta characteristics for

-80 '1.5 - - - - - -3 for al/ types.
lEBO 5 0 - -10 - -10 - -10 mA
* VCEOlsus) -0.2a 0 -40 - -60 - -80 -
VCERlsus)
-0.2a -40 - -60 - -80 - V
RBE = 100r!
VCEvlsus) 1.5 -0.2a -40 - -60 - -80 -
hFE -3 -5a 1000 20,000 1000 20,000 1000 20,000
-3 -lOa 100 - 100 - 100 -
-3 -5a - -2.8 - -2.8 - -2.8
VBE
-3 -loa - -4.5* - -4.5' - -4.5* V
-5a -O.Ol a - -2 - -2 - -2
VCElsat) -loa -O.la - -3* -3 * - -3*
- V
VF 10" - 4 - 4 - 4 V
Z 468 2.68 2 468 Z
hie 001 0.1 I
468
1=1 kHz -5 -1 1000 - 1000 - 1000 - "

* Ihlel
Fig. 6 - Typical smal/'signal gain for all types
1= 1 MHz -5 -1 20 - 20 - 20 -
ES/b
L = 3 mHo 1.5 -4.5 30 - 30 - 30 - mJ
RBE = lOOn
IS/b -35 -1 - -1 - -1 -
t = 1 s,
-25 -2.8 - -2.8 - -2.8 - A
nonrep.
ReJC - 1.75 - 1.75 - 1.75 °C/W
* In accordance with JEDEC registration data format (JS-6 RDF-41.

a Pulsed: Pulse duration = 300 ps, duty factor == 1.8%.
.,
COLLECTOR-lO-EMITTER SATURATION V01.TAGE [VCE('C'~-V
Fig. 7 - Typical saturation characteristics

for all types.
COLLECTOR-lO-EWITTER VOL.TAGE tVCE}.-J v COLL.ECTOR SUPPLY VOLTAGE (\ICC)"-2011

1.4 lSL"IS2"IC/!)OO,TC·2'·C ,_
1-(2.S
I.,\£::.:::=::j:=,..,."k---l--+-+-W--I--I
!! -"'''-'t..
~ -10
§ ;'0> --
~ ~
~ 0.61'- ~
o·f-"',..-----+----f--+--+-+I _--±.-+-9H
.z.o ....... ~I-"'-
0.'
0.1
-I ., ~ 6 1 8 t .10
BASE-TO-EMITTEA VOLTAGE: (lIatl-V COLLECTOR CURRENT IIc1-A
Fig. 8 - Typical output characteristics for Fig. 9 - Typical transfer characteristics for Fig. 10 - Typical saturated switching·time
al/ types. al/ types. characteristics for al/ types.
_____________________________________________________________________ 265
POWER TRANSISTORS
2N6666,2N6667,2N6668
Features:
1O-AmpereP-N-P Darlington Power Transistors _ Operates from Ie without predriver
_ High reverse second·breakdown capability
40-60-80 Volts, 65 Watts Applications:
Gain of 1000 at 3 A (2N6666) _ Power switching - Audio amplifiers
Gain of 1000 at 5 A (2N6667, 2N6668) - Hammer drivers
The 2N6666. 2N6667. and 2N6668 are

monolithic silicon p-n-p Darlington trans- TERMINAL DESIGNATIONS
istors designed for low- and medium-
frequency power applications. The high
i: r
,---------1 B
€]~'
gain of these devices makes it possible
for them to be driven directly from inte-
grated circuits. The 2N6666. 2N6667.
I
I
1
1
(FLA~GE) 0
,I ,---
and 2N6668 are complementary to the
2N6386. 2N6387. and 2N6388. respectively." I I ,I
I I BOTTOM VIEW
These devices are supplied in theJEDEC IL _ _ _ _ _ _ _ _ _ -.l1

TO-220AB VERSAWATT package. JEDEC TO·220AB
92CS-2086JRI
&reChnical data for 2N6386-2N6388 are given in
RCA Bulletin File No. 610.

2N6666 2N6667 2N6668 NOTE- CURRENT DERATING AT C~STAHT
VOLTAGE APPLIES ONLY 10 THE DISSIPATION-
LIMITED PORTION AND THE IS/b -L1MJTED
• V CBO ............................... . -40 -60 -80 V '0
z~ PORTION OFt,tAXIMUM OPERATING AREA
i~~
VCER(sus! CURVE, 00 NOT DERATE THE
SPECIFIED VALUE fOR Ie MAX
R BE =100n ...................... . -40 -60 -80 V
vCEo!sus! ........................... . -40 -60 -80 V o~c
~~~
VCEV(sus!
!~~ D,.
V BE =-1.5V ...................... . -40 -60 -80 V iffi<ll
"e ". ....1'/0.
• V EBO .............................. . -5 -5 -5 V ~~: ~D
* Ie ................................. . -8 -10 -10 A ~~~ '0 ~"'
'CM .....................•........... -15 -15 -15 A ~~a '(/+,.1'(:
• 'B ................................. . -0.25 -0.25 -0.25 A ~~ D
• PT
"
TC C ....................... .
";250 65 65 65 W
TC >
25°C ........... derate linearly 0.52 WPC " >0
CASE TEMPERATURE (1cl--C "" '" '" '00
• Tst9 • TJ ............................ . -65 to +150 - - - °c

TL Fig. 2 - Derating curve for all types.
At distances ;;'1/8 in. (3.17 mm!
_ _ _ _ 235
from case for 10 s max.
·'n accordance with JEDEC registration data format (JS-6 RDF-4).
I . COLLECTQR-TO-EMITTER VOLTAGE IVCE"-311
•
•! • L :r-r--t
l- ~' 10: I
~ • \ ~~i:o
~ k:-- i ~c.
f 10 ~ ~~
• 2
~'IO~===-\"~
~'?-
~ .~
-..;::"(!
IS
4~ ~ 'to...
~"'~
~ ~.
8-
i 'i. i \(~ 6-
'%71
~i-~
...
,~ I' 1\ I~ ... IO~;/l, , I, . . .

;!
I
4
• • •• •
••
, , , , , , 0.001
2 4 68
0.01
2 .. ' 8
0.1
2 .. 6 '
I
2 468
10
2 4 '1.2
10
10' 104 10 15 -0.1 -I -10
NUMBER OF' THERMAL CYCLES COLLECTOR CURRENT IlCI-A f'REQUENCY!fI-MHr
Fig. 3 - Thermal'"Cycling rating chart for all tyPfls. Fig. 4 - Typical de beta characteristics Fig. 5 - Typical small·signal gain
266 ________________________________________________________________________
2N6666,2N6667,2N6668
ELECTRICAL CHARACTERISTICS, At Case Temperature (T.CI = 2fiOC Unless Otherwise Specified
UNITS
SYMBOL Vde A de
ICEO -80 a - - - - - -1
-60 a - - - -1 - -
-40 a - -1 - - - -
mA
-80 Ui - - - - - -0.3
ICEV -60 1.5 - - - -0.3 - -
-40 1.5 - -0.3 - - - -
TC= 125a C -80 1,5 - - - - - -3
-60 1.5 - - - -3 - -
-40 1.5 - -3 - - - -
lEBO 5 a - -10 - -10 - -10 mA
VCEO(sus! -0.2a a -40 - -60 - -80 -
VCER(sUS!
-0.2a -40 - -60 - -80 - V
RBE " 100 S1
VCEV(sus! 1.5 -0.2a -40 - -60 - -SO -
-3 -3 a 1000 20,000 - - - -
-3 -5a - -
1000 20,000 1000 20,000
hFE
-3 -sa 100 - - - - -
-3 -loa .- 100 - 100 -
-3 -3a 2.S - - -
-3 ·5a -2.8 - -2.S

VBE V
-3 ··8 a 4.5 - - -
-3 lOa -. -4.5 - -4.5
-3a ·0.006 a 2 - - -
_Sa -OOl a -2 - -2
* VCE(sat) - sa -O.osa - - -
V
3
lOa -O.la 3 -3
sa 4 - -.
VF V
loa - 4 4
hie
1 0 1kHz -5 1 1000 1000 - 1000 -
Ihlel
I" 1 MHz 5 1 20 20 20 -
Es/b
L" 3 mH, 1.5 4.5 30 30 30 - mJ
RBE" 100 n
ISlb _.
--20 3.2 ··3.2 -3.2 - A
t 1 s, nanrep.
0
ROJC 1.92 1.92 - 1.92 aC/W

aPulsed: Puis. duration 0 300 IlS, duty factor = 2%,
*In accordance with JEDEC registration data format (J5-6 RDF·4) .
...
~ -1.5
-2.5
-,
BASE-TO-EMITTER VOLTAGE tVBEI-v
-. COLLECTOR-TO-EMITTER VOLTAGE tVCEI-V
Fig. 6 - Typical input characteristics Fig. 7 - Typical output characteristics

for all types, for all types.
_____________________________________________________________________ 267
POWER TRANSISTORS
2N6666,2N6667,2N6668
17.~ COLLECTOR-lO-EMITTER VOLTAGE IVeE) .~3 v
"
2.'
BASE-lO-EWITTER VOlTAGE IVBE I-V.:r:CS_24107RI
Fig. 9 - Typical transfer characteristics for a/l types.
o -I "2 -,
COLLECTOR-TO-EMITTER SATURATION 't'OI...TAGE [\lCEI ... t~~
-'0
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- V Fig. 10 - Typical saturation characteristics
for a/l type •.
Fig. 8 - Maximum operating areas for all types of T C = 25°C.
Fig. 12 - Minimum values of reverse-bias second

braakdown characteristic (ESA>i
for all types.
COLLECTOR SUPPL.Y VOLTAGE (VCCI--2OV

lSI-IBZ-IC/!IOO, TC-25-C
L' ,-'--
'.2~
-.........
---
1
K
~
....... 1"-
a O.B
!~ l"- I'-
0.6
0.' i'-...
~
.......... l.!!- I-
. , . , ..
0.2
.1
, , 10
COL.LECTOR CURRENT 11el-A

characteristics for a/l types.
Fig. 11 - Maximum operating areas for all types at T C = 100°C.
268--------------____________________________________________________________
POWER TRANSISTORS
2N6669
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistor Features:

• Switching speed
General-Purpose, Medium-Power Type for
The RCA-2N6669- is an epitaxial-base silicon TERMINAL DESIGNATIONS

shunt regulators, automotive voltage regu-
n-p-n transistor supplied in the VERSAWATT lators, and driver stages for high-fidelity
package. This transistor is intended for a amplifiers.
wide variety of medium-power switching
and amplifier applications such as series and -Formerly RCA Dev. No, TA9105.
C
(FLANGE)
o
• V CBO .. - ....... - ..... .
2N6669
40 V
BOTTOM VIEW
,
.,-
• V CEO .......... . 30 V
• V EBO 5 V
IC 10 A
JEDEC TO·220AB
* IB 4 A
14 A (See dimensional oulllne "S",)
• IE
• PT :
At T C = 25°C 40 W
At TC= 100°C 16 W
At TC ;;;'25 0 C Derate linearly 0.32 W/oC
* Tstg , T J .................... . -65 to 150 °c
,* T L (During soldering):
At distance 0.1 25 in. (3.17 mm) from case
for 10 s max. 235
* In accordance with JEDEC registration data format (JC-25 RDF·').
NlJMBER or THERMAL CYCLES
Fig. 1 - Thermal-cycling rating chart.
10 10
COLLECTOR-TO-EMITTER VOLTAGE (VCE1- V COLLECTOR-TO-EMITTER VOLTAGE(VCE1-V
92CM-30187
92CM-2999,1
Fig. 2 - Maximum operating areas at TC = 25° C. Fig. 3 - Maximum operating areas at T C = 100°C.
--------------------------___________________________________________ 269
POWER TRANSISTORS
2N6669
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 2SOC

VOLTAGE CURRENT
CHARACTERISTIC 2N6669 UNITS
Vdc Adc
VCE VBE IC IB Min. Typ. Max.
ICEO 20 - - 0.1 mA
* ICEV 40 -1.5 - - 0.1
mA
TC= 100°C 20 -1.5 - - 5.0
* lEBO 5.0 - - 1.0 mA
* VCEO(sus) b 0.28 30 - - V
0.1 I
COLLECTOR CURRENT (~c) -A 92CS-30f68
10
VCER(SUS) b
RBE = 50 n
0.28 40 - - Fig. 4 - Typical de beta characteristics.
* hFE 2 5a 20 - 100
VBE(sat) 5a 0.5 - - 2.0 V
28 COLLECTOR- TO-EMITTER VOLTAGE (VeE). zv
5d 0.5 - - 1.0 i ~~~--~~F--~~~~~--~-+~~

* VCE(sat)
lOa - -
V I
1.0 2.5 ~ ~~~~/~~~-4-4~~~--~-+~~
~
* Cobo
VCB = 10 V, f = 1 MHz 50 - 150 pF 1'61-1-1~~~~-'-4~~~;'\.---'Ir--+~~
* Ihfel 2 0.5 10 - 70 ~ 11'---f-++t+-,f-++t+--P---+++-l
1211
f = 1 MHz
'Sib 25 1.0 - - A
I 8~~--1-1~r-~--1-1~r-~--+-~
z
t = 0.5 5, nonrepetitive 10 4.0 - - ~ 4f-+--~+t-+--t-+t-+--+-~1
* td C 5.0 0.5 - 0.03 0.05
.. 6 80.1 2 .. II 8 .. It 8 10
t C
r 5.0 0.5 - 0.2 0.3 0.01
p.s
* t 5C 5.0 0.5 - 0.3 0.5 Fig. 5 - Typical g~;n-bandwidth product.
* t{ 5.0 0.5 - 0.3 0.5
* ROJC 10 4 - - 3.125 °CIW
*Minimum and maximum values and test conditions bCAUTION: The sustaining voltages
in accordance with JEDEC registration data format JC-2S ADF-l. V CEOlsus) and V CER Isus) MUST NOT
apulsed; pulse duration = 300 IlS, duty faC"tor ~ 2%. be measured on a curve tracer.
COLlECTOR-TO-EMITTER VOLTAGE (VCEI-V 92CS.~OI69
Fig. 6 - Typical output characteristics.
92CS-3016!1
Fig. 7 - Typical saturation characteristics. Fig. 8 - Typical base-fa-emitter saturation Fig. 9 - Typical saturated switching
characteristics. characteristics.
270 ______________________________________________________________________ ~
POWER TRANSISTORS
2N6671,2N6672,2N6673
Features:
5-A SWitchMaX Power Transistors • 100% High-Temperature Tested for
125°C Parameters
High-Voltage N-P-N Types for Off-Line Power Supplies and Other
High-Voltage Switching Applications • High Voltage Ratings:
VCEX = 350 V to 450 V
The RCA-2N6671, 2N6672, and 2N6673· high-speed transistors are 1 OO-per-cent tested
SwitchMax series of silicon n-p·n power • Low VCE(sa!) at IC = 5 A
for parameters that are essential to the design
transistors feature high-voltage capability, of industrial high-power switching circuits. • Steel Hermetic TO-204MA Package
fast switching speeds, and low saturation Switching times, including inductive turn-off
voltages, together with high safe-operating- time, and saturation voltages are tested at Applications:
area (SOA) ratings. They are specially de- 1250 C, as well as at 25°C, to provide infor-
signed for use in off-line power supplies and • Off-Line Power Supplies
mation necessary for worst-case design.
are also well suited for use ina wide range of • High·Voltage Inverter.
The RCA-2N6671, 2N6672, and 2N6673
inverter or converter circuits and pulse-width- • Switching Regulators
series transistors are supplied in steel JE DEC
modulated regulators. These high-voltage,
TO-204MA hermetic packages.
• Formerly. RCA8767, RCA8767 A, and TERMINAL DESIGNATIONS

RCA8767B, respectively.

2N6671 2N6672 2N6673
• vCEV
v BE = -1.5 V 450 550 650 V JEDEC TO-204MA
• V CEX (Clamped)
VBE=-1.5V ............. . 350 400 450 V (See dimensional outline "A".)
* V CEO .................................. . 300 350 400 V
• V EBO ................... : .............. . 8 V
Ielsa') .................................. . 5 A
*. IC ..................................... . 8 A
* :~M .. :::::::: ::::::::::: ::: ::::: :::: ::::: 10

4
A
A
• PT
T C up,0250C ........................ . 150 W
T C above 25°C, derate linearly ........... . 0.86 WPC
• T st9 ' T J ............................... . -65 to 200 °c
• TL
. At distance ;;;'1/16in.I1.58mm)frofO
. ........... _ . 235 °c
I ,
CASE TEMPERATUR£ (TC1--C
Fig. 1 - Dissipation and I Sib derating curveS for

all types.
i
~
~w
I
.
• /
i.--
Zo
~z
~~ V I
I
g§ 4
~a: I i
i
V I ,
~ 'V I
I
I,
0.1
0.001
... 0.01
i I )'1 :
, I .. ...
,
0.1
PULSE WIDTH HpJ-to
I, .. 0.'
I I II
..
I '0
10
4 6 ' 1 05 4"1'
NUMBER OF THER ..... L CYCLES t2.C ... ~04"
Fig. 4 - Therma/-cycling chart for a/l types.

Fig. 2 - Typical thermal-response characteristic Fig. 3 - Typical de beta characteristics for al/ types.
for all types.
______________________________________________________________ ~271
POWER TRANSISTORS
2N6671,2N6672,2N6673
CHARAC- VOLTAGE ICURRENT
Vdc Ad" 2N6671 I 2N6672 I 2N6673 UNITS
TERISTIC
veI'l VBEI 'C I 'B Min.1 Max.1 Min.1 Max.IMin.1 Max.
450 -1.5 - 0.1 - - - -

ICEV 550 -1.5 - - - 0.1 - - mA
650 -1.5 - - - - - 0.1
* lEBO -B 0 - 2 - 2 - 2
* VCEO(sus)D 0.2a 0 300 - 350 - 400 - V 10
hFE 3 ~ 10 40 10 40 10 40
Fig. 5 - Typical collector·to-emitter saturation voltage
VBE(sat) 5a 1 - 1.6 - 1.6 - 1.6
~s a function of collector current for all types.
VCE(sat)
5a 1 - 1 - 1 - 1
Ba 4 - 2 - 2 - 2
V 4~
VCEX b
(Clamped ES/b) -5 5 Ie 350 - 400 - 450 -
L=170 IlH.
R BB=5 n
-5 B 3e 200 - 250 - 300 -
ISlb 25 6 1 - 1 - 1 - s
Ihle l t 5 MHz 10 0.2 3 12 3 12 3 12
tT 10 0.2 15 60 15 60 15 60 MHz
Cobo t=O.1 MHz 10 c 50 300 50 300 50 300 pF
tdd 5 1 - 0.1 - 0.1 - 0.1
t,d 5 1 - 0.5 - 0.5 - 0.5
t sd 5 Ie - 2.5 - 2.5 - 2.5 10
tt d 5 Ie - 0.4 - 0.4 - 0.4 92CS-29984
Il s Fig. 6 - Typical base-ta-emitter saturation voltage as

tc a function of collector current for all types,
VCC=125 V.
L=170 IlH. 5 Ie - 0.4 - 0.4 - 0.4 4
RC=25 n
Collecto, clamped
COLLECTOR -TO-EMITTER
VOLTAGE [VCE'.3V
I I
to VCEX
~
,
g
~>
450
550
-1.5
-1.5
-
-
1 -
-
- -
-
-
-
,-
i",
ICEV - 1 mA ~~I _40·C
650 -1.5 - - - - - 1 ~~ I 2.~.C
r-
VCE(sall 5a 1 - 2 - 2 - 2 V ~
~
,~.".T"
5
~
t,d 5 1 - 0.8 - 0.8 - 0.8 t
t sd
tt d
5
5
Ie
Ie
-
-
4
O.B
-
-
4
O.B
-
-
4
0.8
Il s
!
COLLECTOR CURRENT IIcl -A
. 10
tc
VCC=125 V. Fig. 7 - Typical base-to-emitter voltage as a function
of collector current for all types.
L=170 IlH. 5 Ie - 0.8 - 0.8 - O.B
RC=25 n
Collecto, clamped
to VCEX
* IRIIJC
* In accordance with JE DEC registration data.
a PUlsed: pulse dUration = 300 J,LS, duty factor ~ 2%.
b CAUTION: The sustaining voltage VCEO(sus)
and V CEX MUST NOT be measured on a curve tracer.
COLLECTQR-TO-EMITTER VOLTAGE (VCEJ-V
Fig. 8 - Typical output characteristics for all types.
272
2N6671,2N6672,2N6673
COLLECTO!l-TO- EMITTER VOLTAGE' VCEI- V

92CM-29979RI
Fig. 9 - Max;mum operating areas for all types (TC = 25° CJ.
COLLECTOR-TO-EMITTER VOLTAGEIVCEI-V
82CM-29980RI
Fig. to - M.ximumope,.ting.,eas fo,all types 1TC= tOODCI.
___________________________________________________________ 273
POWER TRANSISTORS
2N6671,2N6672,2N6673
COllECTOR CURRENT (IC1-A
Fig. 11 - Typical saturated switching time Fig. 12 - Typical saturated switching time Fig. 13 - Typical saturated switching time
characteristics for al/ types. characteristics for all types. characteristics for all types.
~'t 10' CASE TEMPERATURE ITC'-25-C

FREQUENCY (fl-I "'HI
~.L •
~L~~I~
u~
~~ :r--...
i~ 2
8""
!~ , -
c""
~r u
COLLECTOR CURRENT (IC)-A CASE TEMPERATURE CTC l-·C
~ .
" 2 .. , "
COLLECTOR-lO-BASE:
, .. II, , ...
to' OR
VOLTAGE IVcBI-V
EMITTER-TO-BASE VOLTAGE (VE8)-V
Fig. 14 - Typical saturated switching time

Fig. 15 - Typical saturated switching time Fig. 16 - Typical common·base input or output
characteristics as a function of capacitance characteristics as a func·
case temperature for all types. tion of collector·to-base voltage or
emitter-to-base voltage for all types.
V<EX
RATING
10"'- Ie (PEAK)
Fig. 17 - Oscilloscope display for measurement of

clamped induction switching time (tc ).
274 __________ ~ ____________________________________________________________

POWER TRANSISTORS
2N6674,2N6675,2N6689,2N6690
Features:
10-A SWitchMaX Power Transistors .100% High-Temperature Tested
for 100° C Parameters
High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage • Fast Switching Speed
• High Voltage Ratings;
Switching Applications VCEX = 350 V to 450 V
• Low VCE(sat) at IC = 10 A
The RCA·2N6674, 2N6675, 2N6689 and saturation voltages are tested at 100°C, as • Steel Hermetic TO-204MA
2N6690· Switch Max series of si licon n·p·n well as at 25°C, to provide information Package (2N6674,2N6675)
power transistors feature high·voltage capa- necessary for worst-case design. " TO-211 MA Package-
bility, fast switching speeds, and low satu· steel hermetic shell, solid
The 2N6674 and 2N6675 transistors are sup-
ration voltages, tog.ether with high safe- copper headerlstud for
plied in steel JEDEC TO-204MA hermetic
operating-area (sOA) ratings. They are low-thermal resistance.
packages. The 2N6689 and 2N6690 tran·
specially designed for off·line power supplies, All terminals isolated from
sistors are supplied in JEDEC TO-211 MA
converter circuits, and pulse-width-modulated case (2N6689, 2N6690)
hermetic packages with all terminals elec-
regulators. These high-voltage, high·speed trically isolated from case. Applications:
transistors are 100·per·cent tested for para· • Off-Line Power Supplies
meters that are essential to the design of • Formerly RCA Dev. Type Nos. TA9114D and
• High-Voltage Inverters
high-power switching circuits. Switching TA9114E;TA9146D and TA9146E, respectively.
times, including inductive turn·off time, and
2N6674 2N6675
2N6689 2N6690
* VeEV
V&=~5V ............................ . 450 650 V
* VeEXIClampedl
V B E=-1.5V ............................ . 350 450 V
* VCEO ..................................... . 300 400 V
* V EBO ..................................... . V
le lsat ) ..................................... . 10 A
* IC .........................................• 15 A
ICM .•..............................•....... 20 A JEDEC TO-204MA
* 18 ...•.......•...•..••.•.•............•.•••• 5 A
* PT
TC upto 25°C ............................ . 175 W
T C above 2SoC, derate linearly ............... . W/oC
* Tstg , TJ .................................... . _ _ _ -65 to 200 °c
* TL
At distance;;;' 1/16 in. 11.58 mm) from
seating plane for 10 s max. 235 °e COLLECT~R
_
~ \
I
BASE ~
EMITTER -
92CS-34133
JEDEC TO-211MA
(See dImensIonal oulllne "M",)

I-
Z
au
'"'"
:>
v
'"o
l-
V
au
...J
...J
o
V 100
l'
50
"
" 50 ~ ~ ~ ~
CASE TEMPERATURE (TCI-OC
~ ~ ==
~~_
B
to _ __ I 6 8 _ 1000
COLLECTOR-TQ-EMITTER VOLTAGE (VCEI - V 92CM-30419R2
Fig. 2 - Dissipation and ISib derating curves
Fig. 1 - Maximum operating areas for a/l types ITC = 25°C). for all types.
___________________________________________________________________________ 275
POWER TRANSISTORS
2N6674,2N6675,2N6689,2N6690
TEST CONDITIONS
LIMITS
I 2N6675
•I
··
,
CHARACTERISTIC
Vdc Adc 2N6689 2N6690 UNITS '"•
" c:..,
~
I ~
=;i~ ~lt.~4~U.9,
VCE I VBI' Ic IR Min.1 Max.IMinJ Max. 100
TC - 25cu,C ~ 8
450 -1.5 - 0.1 - -

Q
3
~ . 1\ •
I
"
~<
,"'-to"
~D ~ .....
ICEV
650 -1.5 - - - 0.1 "
-7 0 - 2 - 2
mA ~ ,
. t l, .~J
lEBO ~
- -
i'-
VCEO(sus)b 0.2" 0 300 400 V (; • 10 15 • 10! , • I IN>'
hFE 2 lOa 8 20 8 20 NUMBER OF THERMAL CYCLES
VBE(sat) lOa 2 - 1.5 - 1.5 Fig. 3 - Thermal--cycHng for all types.
VCE(sat)
lOa 2 - 1 - 1
15a S !i !i
V
VCEX b
(Clamped ES/b) -4 10 2 350 - 450 -
L=50 pH,RBB=2 n
2N6689,90 25 7 1 - 11 -
ISlb 2N6674.75 30 5.9 1 - 1 - s
For All Types! 100 0.25 1 - 1 -
Ihfel f = 5 MHz 10 1 3 10 3 10
fT 10 1 15 50 15 50 MHz
Cobo f= 0.1 MHz lO c 150 500 150 500 pF 0.01
2 .. 6 8 2: .. 68 2 .. 6 8 2 : " 6 8,
0.001 0.01 0.1 I 10
ti -6 10 2 - 0.1 - 0.1 PULSE WIDTH lip) - .
92CS-50581
t d -6 10 2 - 0.6 - 0.6 Fig. 4 - Typical thermal-response characteristic
r
for all types.
t d -6 10 2e - 2.5 - 2.5
s
tfd -6 10 2e - 0.5 - 0.5
ps COLLECTOR -TO -EMITTER VOLTAGE (Ye ).5 V
te 11""'·
.1 .1
VCC = 135 V,
L=50 IlH,RC";;;
13.5 n,Coliector
-6 10 2e - 0.5 - 0.5
2 •
~
~
~
.t---~"'~'>J~
c:..,
~ ~-(.).
~(
clamped to V CEX ~ , _ 2$·C
100 •
"
~
z
~ 1'-]'
450 -1.5 - 1 - - mA
0
• 10
-4C)-c
ICEV 650 -1.5 - - - 1 ! ., t--
J:'-..,
~
VCE(sat)
t rd -6
lOa
10
2
2
-
-
2
1
-
-
2
1
V g
· , 4 I
10
.
4 , I I
100
t sd -6 10 2e - 4 - 4 nel-solts
Fig. 5 - Typical dc beta characteristics
tfd -6 10 2" - 1 - 1
ps for al/ types.
te
VCC = 135 V,
L=50 pH,R C";;; -6 10 2" - 0.8 - O.B
13.5 n,Colleetor
clamped to V CEX
10 5 °C/W
apulsed: pulse duration:::: 300 IlS. duty factor ~2%. Cv CB value.
bCAU:TlON: The sustaining voltage VCEOlsus) and VCEX d vCC = 135 V, tp = 20 ~s.
MUST NOT be measured on a curve tracer. el B1 = -I B2 ·
COLLECTOR CURRENT 'Iel - A
Fig. 6 - Typical collector-to·emitter saturation

voltage characteristics for all, types.
276 _____________________________________________________________________
2N6674,2N6675,2N6689,2N6690
CASE TEMPERATURE t Tc 1.2~·C
COLLECTOR -TO' EMITTER VOLTAGE (VeEI.'OV
SMALL-SIGNAL FREQUENCY' 5 MHz
0.4 0.8 1.2. 1.6

6 8 10 6 100
COLLECTOR CURRENT (lei - A COLLECTOR-lO-EMITTER VOLTAGE (VeEI-V
COLLECTOR CURRENT(IC)-A
Fig. 8 - Typical small-signal forward current

Fig. 7 - Typical base-to-emitter saturation transfer ratio characteristic for aJ/ Fig. 9 - Typical output characteristics for al/ types.
voltage characteristics fDr all types. types If ~ 5 MHz).
··
r
·
~
, ,o_;'~.• """EO •
J VeEX FOR t, ON'
,u " ,.
COLLECTOR CURRENT (leI-A COLLECTOR CURRENT I'Icl- A
921;S·30319
Fig. 10 - Typical saturated-s~jtchjng-time charac- Fig. 11 - Typical saturated-sVJj"tching-time charac- Fig. 12 - Typical saturated-swjtching-time charac-
teristics at TJ:= 25 C as a function of teristics at T J = 100 C as a function of teristics at TJ = 100 Cas a function of
collector current for all types. collector current for all types. collector current for all types.
~IO.:~E;:-Clbo CASE TEMPERATURE (Tel = 2!)-C

FREQUENCY (f) • , MHl
i 4
"
~ 'r--r--t-rtt--+--i-T+i--t--i-T+ 1
o "
H
~ 10'8~;j:=t=at==$=$=~$=~=$:$:l ~ 10
§ :r-~~±-rtt--+--i-T+i--t--i-~ !5
I. ___ J-2N6674,2N6689
t*"" 1-2.6675,2N6690
~ 'r--r--t-~~~~---~T+i-~-b,i--t~ "'"o
~
~
..
~'O"E~~J§!~~!H~!~! ~8 100 200 300 400 500
i '.r--+--~-H--i--t-+++--t--+i-
0
. .. . .. . .
350 450
CLAMPED COLLECTOR -TO- EMITTER
810'
w m ~ ~ w ro M ~ ~ VOLTAGE [VCEX (CLAMPED)] -V
JUNCTION TEMPERATURE ITJ1- ·c '0 .0' .0' 92CS- 30384RI
COLLECTOR-lO-BASE VOLTAGE (Veal-V OR
Fig. 13 - Typical saturated-switching-time charac- EhlllTER-lO-BASE VOLTAGE (VEBI-V
teristics as a function Df junction tem- 92CS·'0388
perature for all types. Fig. 15 - Maximum operating conditions for

Fig. 14 - Typical common-base input (Cibo ) or
output (Cobo ) capacitance charac- switching between saturation and
teristics for all types. cutoff for all types.
Fig. 16 - Oscilloscope display for normalized

Ie measurement of clamped inductive
VCEX switching time (tc )'
RATING
10% VCEX 10"1. Ic (PEAK)
92.CS·:50389RI
_____________________________________________________________________ 277
2N6676, 2N6677, 2N6678, 2N6691, 2N6692, 2N.6693
Features:
15-A SwitchMiIlf Power Transistors • 100% High-Temperature Tested
for 100°C Parameters
High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage • Fast Switching Speed
Switching Applications • High Voltage Ratings:
VCEX = 350 Vto 450 V
RCA·2N6676, 2N6677, 2N6678, 2N669l, ration voltages are tested at 100°C, as well as • Low VCE(sat) at IC = 15 A
2N6692, and 2N6693- Switch Max series of at 25°C, to provide information necessary • Steel Hermetic TO-204MA
silicon n-p-n power transistors feature high- for worst-case design. Package (2N6676,77 ,781
voltage capability, fast switching speeds, and The 2N6676, 2N6677, and 2N6678 tran- • TO-211MA Package-
low saturation voltages, together with high sistors are supplied in steel JEDEC TO-204MA steel hermetic shell. solid
safe-operating'area (SOA) ratings. They are hermetic packages. The 2N669l, 2N6692, copper header/stud for
specially designed for off-line power supplies, 2N6693 transistors are supplied in JEDEC low-thermal resistance.
converter circuits and pulse-width-modulated TO-211 MA hermetic packages with all termi- All terminals isolated from
regulators. These high-voltage, high-speed nals electrically isolated from case. case (2N6691, 2N6692,
transistors are IOO-per-cent tested for para- 2N6693)
meters that are essential to the design of high- • Formerly RCA Oev. Types Nos. TA9114A. Applications:
power switching circuits. Switching time, in- TA9114B, TA9114C, TA9146A, TA9146B, and
TA9146C, respectively.
cluding inductive turn-off time, and satu- • High-Voltage Inverters
2N6676 2N6677 2N6678
2N6691 2N6692 2N6693
• v CEV
V8E~-1.5V ........................ . 450 550 650 V
• V CEX (Clamped)
V BE ~ -1.5 V ........................ . 350 400 450 V
* V C-EO .................................. . 300 350 400 V
* V EBO .................................. . 8 V
IC(sat) .................................. . 15 A
* IC ..................................... . 15 A
ICM •........•....•....•......•....•.... 20 A
* 18 ...........•.....................•.... A JEDEC TO-204MA
* PT 0
T C Up1025 C ........................ . 175 W
T C above 25°C, derate linearly ........... . WPC (See dimensional outline "A".)
* Tstg , T J ............................... . -65 to 200 °c
* TL
At distance ~ 1/16 in. (1.58 mmJ from
seating plane for 105 max. 235 °c COLLECT£)R
-
I. \
BASE Z
EMITTER -
92C5-341:33
JEDEC TO-211MA
(See dimensional outline "M".)
I-
Z
'"
~
"u
a:
o
I-
U
'"..J..J I
o
U
10 68 100 CAS[" TEMPERATURE ITcl-~
COLLECTOR -TO -EMITTER VOLTAGE (VeE) - V

92CM-30390R2
Fig. 2 - Dissipation and 'Sib derating curves for
Fig. 1- Maximum operating areas for all types 1TC=2SoC)- all types.
278 ______________________--------------------------------------------------
_ _ _ _ _ _ _ _ POWER TRANSISTORS
2N6676,2N6677,2N6678,2N6691,2N6692,2N6693
. ··
CHARAC·
TERISTIC
TEST CONDITIONS
VOLTAGE CURRENT
V de Ade
2N6676
2N6691
J LIMITS
2N6677
2N6692
2N6678
2N6693 UNITS
I
~
0
,-
," ('4 St;.
VcEI V BE Ie I IB Minj MaxJ Min.1 Max. Min.IMax. ~ f-~
100
~~~
TC 25 C G Bl 8
t-i'f,
~~
~4"'--=J
c •
·
450 -1.5 - 0.1 - - - -
~
~ '1-'"ts
"
ICEV 550 -1.5 - - - 0.1 - -
mA "
1\
1\ I'" ~c
,~ I \il~ ), .I'}. .1, , "1"-
650 -1.5 - -
· lEBO -8 0 - 2 - 2 -
0.1
2
· . . ..
· VCEO(5u5)b 0.2a 0 300 - 350 - 400 - V
6 e 104
· hFE 3 15 a 8 - 8 - 8 -
· V BE (5at) 15 a 3 - 1.5 - 1.5 - 1.5 Fig. 3 - Thermal-cycling chart for all types.
VCE(5at) 15a 3 - 1 - 1 - 1
15a 3 - 1.5 -
V
1.5 1.5
· VCEX b
(Clamped ES/b) -6 15 3 350 - 400 - 450 -
L~50 /lH,
RBB~2 n
2N6691,92,93 25 7 1 - 1 - 1 -
ISlb 2N6676,77;7B 5
30 5.9 1 - - 1 -
For All Type~ 100 0.25 1 - 1 - 1 -
I hlel 1~5 MHz 10 1 3 10 3 10 3 10
IT 10 1 15 50 15 50 15 50 MHz
Cabo 1~0.1 MHz lO c 150 500 150 500 150 500 pF 2 4 6 S 2. <I 68 "- 4 6 8 2. 4 6 a
0001 0o, 0.' 10
tdd -6 15 3 - 0.1 - 0.1 - 0.1 PULSE WIDTH (tp)-I
t rd -6 15 3 - 0.6 - 0.6 - 0.6 Fig. 4 - Typical thermal-response characteristic

for all types.
t 5d -6 15 3e - 2.5 - 2.5 - 2.5
rw:~~O-E"ITTER
"2 a 'OLTAGE "cEI-"
tid -6 15 3e - 0.5 - 0.5 - 0.5
~ 6r-- c
t I
c
/l5
~ 4s,
~~ 4r--~~~)
J
VCC200 V ~
~
-94)"(/
-- 2S· c
1"''I>,fr'-(.}
L~50 flH, l- 2!--- T"" ~/OO.:-t---
RC .,;; 13.5 n -6 15 3e - 0.5 - 0.5 - 0.5 f'-
-- C
~
.
0
Te ~100oC 010
·40·C
r---
450 -1.5 - 1 - - - - !, I'---
.
~
- - -
ICEV
VCE(5at)
550
650
-1.5
-1.5
15a 3
-
-
-
2
-
-
-
1
-
2
-
-
-
1
2
mA
V
, . ..
COLLECTOR CURRENT (Ic}-A
, .,, 100
t rd -6 15 3 - 1 - 1 - 1 Fig. 5 - Typical dc beta characteristics

for al/ types.
t 5d -6 15 3" - 4 - 4 - 4
L6
tid -6 15 3e - 1 - 1 - 1
1"5
t cI
VCC~200 V,
L~50 flH,
RC ";;13.5 n -6 15 3e - 0.8 - 0.8 - 0.8
'L[R~8J~C_ _ _ _~1_0~~_5-L~I_-JI_ _~~-LI-~I~I~oC_ffl~

apulsed: pUlse duration:::;; 300 /.lS, duty factor ~2%. eVes value.
!>cAUTION: The sustaining voltage V CEO!sus) and V CEX d vCC = 200 V, tp = 20 ~s.
MUST NOT be measuI'ed on a curve tracer. el S1 = -I S2 ' °, e 9 10
COLLECTOR CURRENT tIcl - A
13 14
*In accordance with JEDEC registration data. f Collector clamped to V CEX' 92CS-30386
Fig. 6 - Typical collector-to-emitter saturation
voltage characteristics for all types.
279
POWER TRANSISTORS
2N6676, 2N6677, 2N6678, 2N6691, 2N6692, 2N6693
2: 4 6 13 2: C 0.4 0.8 1.2 1.6 I

6 100
COLLECTOR CURRENT {Iel - A COLLECTOR CURRENT (lc) -A 92CS-30377 COLlECTOR-TO-EMITTER VOLTAGE (VCEI- V
92CS-30374
92CS-30376 Fig. 8 - Typical small'signal forward current
Fig. 7 - Typical base-to-emitter saturation Fig. 9 - Typical output characteristics for all
transfer ratio characteristic for all types
voltage characteristics for al/ types, types.
(f=5 MHz).
JUNCTION TEMPERATURE JUNCTION

CTJJo 2~'C
700 IBI· ISZ"3A
Vee' 200 II
r TEMPERATURE ITJ1-100'C
800 I BI =3A "SE·
IB2 :! ~ A MAX.,l-SO ~H
~ II
tp • 20,...
600 L a50JOH 6
Vee' 200 v
tp -20 •
~ 500 5;-
f
I
~400 t, 4~
w
~300 3~
g
200 2 00
t,
100 COLLECTOR CLAMPED TO I
VCEX FOR Ie ONLY COllECTOR CLAMPED TO "CEX F R tc
o
a 12 16 10 12 14 I 4 6 8 10 12 14 16
COLLECTOR CURRENT (Icl-A COLLECTOR CURRENT (IC)-A
ncs- 303H COLLECTOR CURRENT [Icl - A 92CS-30379
92CS-:50380
Fig. 10 - Typical saturated-switching-time Fig. 11 - Typical saturated-switching-time Fig. 12 - Typical saturated-switching-time
characteristics at TJ = 2fPC as a characteristics at TJ = 10cf1Cas characteristics at TJ = 1000Cas a
function of collector current for a function of collector current function of collector current for
all types. for all types. all types.
100
ICI5A
IBI'IB2~3A
Vec' 200 II
Ip " 2O #oU
600 RL ·13.5n
,~
6 ;.
:5
't.
't.104s~+_ c1b
r
11 ' - I -
~!! 'I---L
6~ rn:"O~--l-
L+
,
I
R CASE TEMPERATURE (Tc) ~ 25"C
fREQUENCY (f) • I MHz
_
- -<
.1., 5
u
!:! j--2N6676,2N6691
L a 50I'H
, I ~~ 3 r--t:= j::~ N6677,2N6692
~ i:! sl-l---+j--+--H+--+:t-++-+---1-r--+-t-1
I
~ 500 10 N6678,2N6693
I
~ 400
-
w S~ :~ - - -----t-~-j-t----_cr--t_-_t_I
.;
4! ~~ l' I
TC ~ 100°C
=. 300 , ~
"0'
~§102
-H--f'l"--d-- ,-t-tt---t-+-H
t:±:
'"o
t,
~ ~ w "1--1-- ~
200 2 00 ::l
~Zz~ : .----~i- t-- ---1-- o
u a 10 a 200 300 400
100 00 350 450
::IE::IE 2.--
tc
.
COLLECTOR CLAMPED TO VCEX FOR ONLY > > CLAMPED COLLECTOR -TO- EMITTER
ow ~ ~ ~ M ro ~ 00 _
0 8310 1
, " " , , VOLTAGE [VCEX (CLAMPED))-V
JUNCTION TEMPERATURE CTJI-·C 10 10' 10'
92CS-30383R2
92CS- 5037a COlLECTOR-TO-8ASE VOLTAGE (VCB1-V OR
Fig. 13 - Typical saturated-switching-time EMITTER-TO-BASE VOLTAGE (VEB1-:2CS_30388
characteristics as a function of Fig. 14 - Typical common-base input (C;bo) Fig. 15 - Maximum operating conditions
junction temperature for all types. or output (Cabo) capacitance for Switching between saturation
characteristics for all types. and cutoff for all types.
it
Fig. 16 - Oscilloscope display for normalized

measurement of clamped inductive
switching time (t c )'
"CEX ~
RATING r' n
10"1. veEX L__ --. Ie -~ -----1 10% IC (PEAK)
280 ________________________________________________________________________
------------------------------------______________________ POWERTRANSISTORS
2N6686,2N6687,2N6688
25-A SwitchMd Power Transistors Features:

i\!ll 100% High-Temporature Tested
N-P-N Types for for 125°C Parameters
Power Supplies and Other High Voltage Ill! Fast Switching Speed
Switching Applications 11 Low VCBsat)
ill Steel Hermetic TO-204MA Package
RCA-2N6686, 2N6687, and 2N6688. Switching time, including inductive turn-
Switch Max series of silicon n-p-n power off time, and saturation voltages are
transistors feature fast switching speeds, tested at t25'C, as well as at 25'C, to pro- TERMINAL DESIGNATIONS
low saturation voltages, and high safe- vide information necessary for worst-case
operating-area (SOA) ratings_ They are design.
specially designed for converters, in-
verters, pulse-width-modulated regulators The 2N6686, 2N6687, and 2N6688 tran-
and a variety of power switching circuits_ sistors are supplied in steel JEDEC TO-
These high-current, high-speed tran- 204MA hermetic packages.
sistors are tOO-per-cent tested for
parameters that are essential to the • Formerly RCA Dev. Type Nos. TA911 9A,
design of high-power switching circuits. T A9119B, TA9119C, respectively.
JEDEC TO-204MA
2N6686 2N6687 2N6688

* VCEV
VSE = -1.5V.. ... ...... .... .... ... .... ..... 260 280 300 V
• VCEx(Clamped)
VSE= -1.5V............................... 210 230 250 V
• VCEO······· .. ·· .. ·····.· .... ·.·.··.·.·....... 160 180 200 V
VESO··············· .. · ... · .................. . 8 V
IC(sat)........................................ 25 25 20 A
25 100
• IC·················.· ........ ·.··.· ...... ·.... 25 20 A
ICM···························.····.· ....... . 50 A 75 .[s/o'_
* IS···························.·.·.· .......... . 8 A I..IA(fretJ
P,- 50
"CIS
~~~~~ ...... -..................... -.. . 200 W

$'1J>4)"IO'l-' ....
TC above 25°C, derate linearly ................. . WloC 25 J-e-"

1.14 {/4tI
* Tstg, TJ ...................................... . - 65 to 200 °c

* TL " '0 70 100
'"
CASE TEMPERATURE (Tc}_OC
150 175 200
At distance;. 1116 in. (1.58 mm) from Fig. I-Dissipation and ISlb derating curves lor
seating plane for 10 s max ................. _... . 235 °C all types.
In accordance with JEDEC registration data.
COLLECTOR-TO -EMITTER VOL rAGE

400 (VCE)- 2. v
·· ~
~
~
6
4
zf-t-Htt-j--t--tit--I -t+i+-+-+H1
, II L
, 100
,
LiE TEMPEtTURE J1-ld5
C 0
C
." C4s~ ,
Joo'l--~
8~~
~~
~l'v'9~ C -
zo-
1"-
1.0 ~
6 ;
~> " ~~s, ,

• 1\ 1\ 1""- ~ ,
10 1 r------ I"
,: I~I~. l
" 6 810
I~.I , 'I"-
. 0,001
2. 4 6 e
001
2. 4 6 B
0.1
2. 4 68
10
,
0.5
., , , , ,
10
,
40
NUMBER OF THERMAL CYCLES PULSE WIDTH (lp) - $ COLLECTOR CURRENT (Ie) - A
Fig. 3- Typical thermal-response characteristic Fig. 4- Typical de beta characteristics lor all
Fig. 2- Thermal-cycling chart lor all types. for all types. types.
------------------------------_______________________________________ 281
POWER TRANSISTORS
2N6686,2N6687,2N6688
ELECTRICAL CHARACTERISTICS ~ lS=IC /IO
~ III
TEST CONDITIONS LIMITS g
z
o II
r.HARAC- VOLTAGE CURRENT ~ CASE TEMPER.!."rURE (Tcl--40·C
TERISTIC Vdc Adc 2N6686 2N6687 2N66S8 UNITS ~~ I" 1.61----I--+--I--+-l-+-I+_

/-j-+-i'-l
I
VCE IVBE IC liB Min_! Max. Min.! Max. Min.! Max. ~~
~~ 1.21---+--+-++-l-+-II--.j-HH
~~ ~ .-.-l--j-'-I---l--Ir---I---I--I--I
TC= 25°C
; O"I---+--+--I--+-l-/-h~~fi"-.c-l---I--I--I
260 -1.5 - 50 - - - -
- " 0.41---+--+--I- 1-1",...-:'--j.o(.....I2'-".~c-1---1--1--1
* ICEV 280 -1.5 - - - 50 - /lA
300 -1.5 - - - - - 50 8
10 100
* lEBO -8 0 - 100 - 100 - 100 COLLECTOR CURRENT (Ie I-A 92CS-314!13
Fig. 5- Typical collector·to-emitter saturation

* VCEO(sus)b 0.2a 0 160 - 180 - 200 - V voltage characteristics for all types.
2 la 30 - 30 - 25 -
2 loa 25 100 25 100 20 80
* hFE 2 20 a - - - - 15 -
2 25 a 15 - 15 - - -
20 a 2 - - - - - 1.8 1.2~~
* VBE(sat)
25 a 2.5 - 1.8 - 1.8 - - ~
~
* VCE(sat)
20 a 2
25 a 2.5
-
-
-
1.5
-
-
-
1.5
-
- -
1.5
V
~
z
Q>
~I
I
.t.•o~ ~
PERt."iIJREl"C';:- 'l-f)~
.
~r t.,s€.1'E.t.\ /
0'" =' ->-

O.S
* VCEX b
- - ./ ,<.;<
-
~ w
(Clamped ~~
-4 25 3 210 - 230 - 250 - 0.6
/'
ES/b)
~
L=25/.lH,
\' 0"-
RBB=10n
~
ISlb 18 1.1 1 - 1 - 1 - 5 0.2
4 6 8 I " Ii 8 10 " 60
i nCS-31454
* Ihfe l 10 1 4 20 4 20 4 20
COLLECTOR CURRENT (lc 1- .A
Fig, 6- Typical base-to-emltter seturation

f=5 MHz
voltage characteristic for all types.
fT 10 1 20 100 20 100 20 100 MHz
* Cabo 10c 300 650 300 650 300 650 pF

f=O.l MHz
* tdd -4
20
25
2
2.5
-
-
-
0.1
-
-
-
0.1
-
- -
0.1
.
-4
20 2 - - - - - 0.35
* trd
25 2.5 - 0.35 - 0.35 - -
20 2" - - - - - 1
* tsd -4
25 2.5" - 1 - 1 - - /lS
-4
20 2" - - - - - 0.25
* tfd
25 2.5" - 0.25 - 0.25 - -
* tc
VCC=80 V
L=25itH,
RC <HI, -4 20 3e - - - - - 0.5
Collector -'-4 25 3e - 0.5 - 0.5 - -
clamped Fig. 7-Typlcaf smail-signal forward-current
to VCEX transfer ratio characteristic for all
types (f = 5 MHz).
282 ________________________________________________________________________
POWER TRANSISTORS
2N6686~ 2N6687, 2N6688

ELECTRICAL CHARACTERISTICS (cont'd) 40
CASE TEMPERATURE (Te'. 2!:i"C
TEST CONDITIONS LIMITS ~

"
CHARAC- VOLTAGE CURREm I '0
TERISTIC Vdc Adc 2N6686 2N6687 2N6688 UNITS "
~2.!i
z 0'
VCE IVBE Ic liB Min_I Max_ Min. I Max. Min. 1 Max. ~ 20
o·
~ 15
0.'
. j 10 0.2
260 -1.5 - 0.5 - - - - 8
BASE CURRENT (lal ·0.1
* ICEV 280 -1.5 - - - 0.5 - - mA

300 -1.5 - - - - - 0.5 o
o 10 12 16 18 20
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- v j92CS-:H456
20a 2 - - - - - 1.5
• VCE(sat) 25 a 2.5 - 1.5 - 1.5 - -
V Fig. 9- Typical output characterlsllcB for 811
types.
20 2 - - - - - 0.6
• trd -4
25 2.5 - 0.6 - 0.6 - -
20 2 - - - - - 2.5
* tsd -4
25 2.5 e - 2.5 - 2.5 - - /.IS
20 2 - - - - - 0.8
* ttd -4
25 2.5e - 0.8 - 0.8 - -
* tc
VCC=80V,
L=25/.1H, -4 20 3e - - - - - 0.8
RC';; 4S"2, -4 25 3e - 0.8 - 0.8 - -
Collector
Clamped to
VCEX
* I ROJC 5 10 .875 1 10 .875 1 1 0.875 l"clW I

• In accordance with JEDEC registration data. V CB value.
<
8 Pulsed: pulse duration = 300 J,J.S, duty factor 2%.
C
= 80 V. tp = 20 1"
,
b CAUTION: The ,ustaining voltage V CEO!'u,) and V CEX
d Vee COLLECTOR CURRENT (leI - A I
e 18 1 = -1 82
MUST NOT be measured on a curve tracer.
Fig. IO-Typlcal clamped turn-off time
characteristics for aI/ types.
Ii
L~~0~'*0----+5----~'0'---+"5.---1.20'---~--~'0
COLLECTOR CURRENT (Ie) - A
Fig. II· Typical saturated'swltchlng-time
Fig. 8- Malilmum operating areas for aI/ types characteristics as a function of
(TC = 25'C). col/ector current for aI/types.
_____________________________________________________________________ 283
2N6686,2N6687,2N6688
~'~,~~e~=+==~~~C.CA~'E~TE;.WPE"R~~ruu~RE~(~TC~I~.~"~·C~
~, '>'0 FREQUENCY (f J -0.1 MHI 25
_____ 2N6 .8.
1--_.0.., .-- ..---2N6 .87
1-'2N66sa
TC;ii!25°C
100 210230250
5 10 15 20 25
COLLECTOR CURAENT {Iel - A
4 6 8 10 '" 6 BIOO 400
CL~~~i1:,i[~~~~T~~L~~Op~~~'~TvER
COLLECTOR -TO-BASE VOLTAGE (Vca)-V OR
EMITTER-lO-BASE VOLTAGE (VEB)-V 92CS-31459 92CS-31461
Fig. 12·Typical saturated-switching-tlme Fig. i3-Typlcal common.iJase input (Cibo) or Fig. 14-Maximum operating conditions lor
characteristics at TC = 125'C as a output (Cabo) capacitance switching between saturation and
lunctlon 01 collector current lor all characteristic for all types. cutoff lor all types.
lor all types.
R l • 4[1/30 W
NON INO
01, Q2 " 2N6354

03 • 2N3762
D2540M
Q4,05,
O.OOIIL F 06,07 = CA3725 QUAD
TRANSISTOR
Vee AS _ + ARRAY
SPECIFIEO-
"* THIS CONNECTION I
SHOULD BE MADE AS
CLOSE AS POSSIBLE TO
COLLECTOR OF
10% Ie (PEAK)
0005,uF TRANSISTOR UNDER TEST
92CS-'S0389RI . . . KELVIN SENSING
24 n CONNECTION
Fig. 15-0scllloscope display for normalized NOTE BATTERY SYMBOLS VCC • VB I • VB2'
measurement of clamped Inductive VB(CLAMP) INDICATE RIGOROUSLY FILTERED
switching tIme (tc).
2g~~
VOLTAGE SOURCES AT THE CIRCUIT TERMINALS
TO ACCOMODATE THE FAST Ir AND If TIMES
AND HIGH CURRENTS PRES·ENT IN THE CIRCUIT.
U-. 20 " ' son = VS 2 NOTE SWI CLOSED FOR Ir, Is, 'I. SWI OPEN FOR Ie
MIN
AOJ FOR IB2 92CM-314U
FREO" 500 Hz
Fig. 16,.Clrcult for measuring switchIng times.
I B I - . - - - - - - . . " X " 90 'Yo
A 10"10
\:I "'A-B ta-X-Y 92CS-30381Rl

tr .. B-C 1f"'Y-Z
ttransition"'X-W
NOTE: TRANSITION TIME
FROM 90% 18 1 TO 90% 182 MUST
BE LESS THAN 0.51-11.
Fig. 17-Phase relationship between Input and

output currents showing reference
points for specificatIon of switching
times.
284 ______________________________________________________________
------------------------------~--------------------------POWERTRANSISTORS
2N6702,2N6703,2N6704
High-Current, Silicon N-P-N Features:
• Fast switching speed at temperatures up to
VERSA WATT Transistors 125°C
• Low VCE(sat)
Switching Applications • VERSAWATT plastic package
RCA-2N6702, 2N6703, and 2N6704- epi- The 2N6702, 2N6703, and 2N6704 tran-
taxial-base silicon n-p-n power transistors sistors are supplied in the JEDEC TO-220AB TERMINAL DESIGNATIONS
which feature fast switching speeds, low (RCA VERSAWATT) plastic packages.
saturation voltages, and high safe-operating- c
"Formerly RCA Dev. Type Nos. TA9164A,TA9164B, IF LANGE)
area (SOA) ratings. They are specially de- TA9164C. respectively.
signed for converters, inverters, pulse-width-
modulated regulators and a variety of power
switching circuits.
92C5-21519
MAXIMUM RATINGS, Absolute-Maximum Values: JEDEC TO-220AB

2N6702 2N6703 2N6704
* V CEV (See dimensional outline "S".)
V BE =-l.5V 140 160 180 V
• V CEO ' 90 110 130 V
• V EBO 7 V
Iclsatl 5 4 A 0
~
* IC' 7 A
~ ~2CO
10 A
tl- =+
ICM
i5~I50
* 18 , 5 A 1 t
* ~~ 1 .~ t
PT ~§125
T c u P to2S:C . 50 W
wi"c 5~ 100
ill =+"
1
T C above 25 C, derate linearly 0.4 ;§ .rs~~. 1
H
it ~
* T stg • T J . -65 to 150 °c :i~ 75 01 llA;;"'~D
* TL ~~
c" 50
~ l'lhm
T
1f ~.
+
At distance ~ 1/8 in. (3.16 mml from seating
~~ ·"o?:4!tt
plane for 10 s max. . 235 °c ~t:i 25
"'"
~ lfmHfnfrii
50 75 100 125 150
CASE TEMPERA TURE (T C )_OC
175
Fig. 1 - Dissipation and I Sib derating curves for

all types.
6 8 10 6 8 100
10 100 I
COlLECTOR-TO-EMITTER VOLTAGE (VCE)-V
COLLECTOR-Ta-EMITTER VOLTAGE (VCEI- V J 92C5-31846 92CS-31649
Fig. 2 - Maximum operating areas for all types Fig. 3 - Maximum operating areas for all types
fTC= 25°Ci. fTC = tOOoCi.
--------------------------------------__________________________________ 285
2N6702,2N6703,2N6704
ELECTRICAL CHARACTERISTICS. at Case Temperature T C = 25°C Unless Otherwise
Specified '
TERISTIC \i dc Adc 2N6702 2N6703 2N6704 UNITS
VCE VSE IC IS Min. Max. Min. Max. Min. Max.
140 -1.5 - 100 - - - -

... ICEV 160 -1.5 - - - 100 - - /lA
180 -1.5 - - - - - 100
140 -1.5 - 1 - - - - D.OOI Ii! .. &0.01 2 .. 680 . 1 Ii! .. III I 2 .. III 8 10
TC=125°C 160 -1.5 - - - 1 - - PULSE WIDTH (tp)-I
Fig. 4 - Typical thermal-response characteristic
,res-sine
180 -1.5 - - - - - 1 mA
for 811 types •
... lEBO -7 0 - 100 - 100 - 100 /lA
... VCEO(sus)b Om a 0 90 - 110 - 130 - V
COL.L.ECTOR-TO-n VOlTrE (VCE''''ZV
2 0.2a 30 - 30 - 30 -
... hFE 2 4a - - - - 20 - w
T
CASE TEMPERATURE (). ~
'~•.
~
2 sa 20 - 20 - - - ;;,
--.CJo 2$oc
... VBE(sat)
4a
sa
0.4
0.5
-
-
-
1.5
-
-
-
1.5
-
-
1.4
- i ··
$ '"...-'
--:j.
I"
,'\I\,
- - - - -
...
48 0.4 0.7 V
! !'\1,\:\
VCE(sat) sa
78
0.5
0.7
-
-
0.8
1.5
-
-
0.8
1.5
-
-
-
1.5 i~
,
,,'\
20 2.5 1 - 1 - 1 - s
· . ..
10
ISlb
g
... Ihfe l ,
10 0.5 10 40 10 40 10 40 ~I I m
COLLECTOR CURRENT CIcl-A
f = 5 MHz '1CS-518U
MHz Fig. 5 - Typical dc beta characteristics tor all

fT 10 0.5 50 200 50 200 50 200
types•
... Cobo 10c 50 150 50 150 50 150 pF
f= 0.1 MHz
... tdd -4
4 0.4 - - - - - 0.1
5 0.5 - 0.1 - 0.1 - -
... t rd -4
4 0.4 - - - - - 0.25
5 0.5 - 0.25 - 0.25 - - /ls
... t sd -4
4 0.4e - - - - - 1
5 0.5e - 1 - 1 - -
... t~ -4
4 OAe - - - - - 0.5
5 0.5e - 0.5 - 0.5 - -
... ROJC 4 5 - 2.5 - 2.5 - 2.5 °CIW
• In accordance with JEDEC registration data. eV CB value.

a Pulsed: pulse duration ~ 300 jlS. duty factor';;; 2%. COllECTOR-TO-EMITTER SATURATION VOLTAG'o[vC"''''''j-- V
d Vec = 70 V, tp = 20 jlS
b CAUTION: The sustaining voltege VCEO(susl MUST NOT 8 1B , ~ -18 2 ' Fig. 6 - Typical coJlector·to-emitter saturation
be measured on:a curve tracer. 1I~/tage characteristics for all types.
IB-Ie"O
1
0
10
·
··,
...
Iai""'"
~;~
H
I, ::~(//
~ ··,- ; 0
8 , =~
~
s k P
-I:
iJ
r
0.'
o 04 0.8 1.2 1.6 2 2..4 COlLECTOR·TQ-EMITTER VOlTAGE"CvC£)-V
BASE-TO-EMITT-ER SATURATION VOLTAGE [VSE'lOtn-V I IC)-A 92CS-311!142
.ZCS-11841 9:leS-518'"
Fig. 7 - Typical base-ta-emitter saturation Fig. 8 - Typical small-signal forward~urrent transfer ratio Fig. 9 - Typical output characteristics for all types.
voltage characteristic forall types. characteristic foralt types (f = 5 MHz).
286
2N6702,2N6703,2N6704
08
CASE TEMPERATURE {TCJ~2~'Ct CASE TEMPERATURE (T e )-12S"C i
Ie oIe/IO, IBI" 182 i
Ie' Ic/10,191"1.62 'fFFfRi1+H+ vcc"roV,'p' 20 f<$ ,:±.
Vee"rov ,'p' 201-'~
~O_6
"
"ti
'. .~
o
z
~O.2 a:: 0.2

~ 't ~
~ 'r li
"3 4 5 6 7 2 :3 4 5 6 7
10 4 £> 810 2 2 4 G 8103
COLLECTOR CURRENT IIC1-A COLLECTOR CURRENT (Ic1-A
COLLECTOR-lO-BASE VOLTAGE (Vca)-V OR
Fig. 10 - Typical saturated-sw;tching-timecharac- EMITTER-lO-BASE VOLTAGE (VEBJ-V 92CS-31846
teristics as a function ofeal/ector current Fig. 11 - Typical saturated-switching-time charac- Fig. 12 - Typical common-base input (Cibo ) or
for all types (TC ~ 25° c/. teristics as a function 0t
collector current output (Cabo) capacitance characteristic
for all types (T C ~ 125 C/. for all types.
Rc" 15- 20n I lOW

NON IND
QI, 02. " 2.N6354

03 " 2N3762
04,05,
Q,Q01}J-F 06,07 = CA3725 QUAD
TRANSISTOR
DEVICE ARRAY
UNDER Vee" .=.+
TEST 70 V - *THIS CONNECTION
SHOULD BE MADE AS
COLLECTOR OF
TRANSISTOR UNDER TEST
•• ...... KELVIN SENSING
CONNECTION
NOTE BATTERY SYMBOLS VCC, VBI. Ve2'

VB(CLAMP) INDICATE RIGOROUSLY FILTERED
20~ i 50
!'F
TO ACCQMODATE THE FAST tr AND tf TIMES
°LL~ 201'5 VB2

AND HIGH CURRENTS PRESENT IN THE CIRCUIT
92CM-31847
MIN ADJ. FOR 1B2
FREQ = 500 Hz
Fig. 13 - Circuit for measuring switching times.
____________________________________________________________ 287
POWER TRANSISTORS
2N6738,2N6739,2N6140
5-A Eiwib:IIMid Power Transistors Features:
• 100% High- Temperature Tested for 125° C
High-Voltage N-P-N Types for Off-Line Power Supplies Parameters
and Other High-Voltage Switching Applications • High Voltage Ratings:
VCEX=350 V to 450 V
The RCA-2N6738, 2N6739, and 2N6740' are 1DO-percent tested for parameters that • Low VCE(sat) atlc=5 A
Switch Max series of silicon n-p-n power are essential to the design of industrial • VERSAWATT package
transistors feature high-voltage capability, high-power switching circuits. Switching
fast switching speeds, and low saturation times, including inductive turn-off time,
voltages, together with high safe- and saturation voltages are tested at 125° C,
operating-area (SOA) ratings. They are as well as at 25° C, to provide information Applications:
specially designed for use in off-line power necessary for worst-case design. • Off-Line Power Supplies
supplies and are also well suited for use in a The RCA-2N6738, 2N6739, and 2N6740 • High-Voltage Inverters
wide range of inverter or conve.ter circuits series transistors are supplied in the • Switching Regulators
and pulse-width-modulated regulators. JEDEC TO-220AB package.
These high-voltage, high-speed transistors
'Formerly RCA Dev. Type Nos. TA9141A.

TA9141B, and TA9141C, respectively.
2N673B 2N6739 2N6740
e
B
VCEV C
VBE=-1.5 V
VCEX(Clamped)
VBE~-1.5 V .................................. .
450
350
550
400 450
650 V
V
(FLANGE)
o c
~ro··········································· 300 350 400 V BOTTOM VIEW

8 _ _ _ __ E
VEBO······································· V 92C8-27519
_____ 5 _ _ __
IC(sat) .......................................... . A
8 _ _ _ __
IC .............................................. . A JEDEC TD-220AB
_________ 10 ______
ICM ............................................ . A (Sse dimensional ouUlne US".)
IB .............................................. . 4 A
PT _ _ _ _ _ 100
TC up to 25°C ................................ .
T C above 25" C, derate linearly ....... . 0.8 NOTE: CURRENT OfRATING AT CONSTANT VOLT.... GE
APPLIES ONLY TO TfiE DISSIPATIO~LIMITED PORTION
Tstg. TJ ............................... . ______ -65 to 150 ______ OF MAXIMUM-OPERATING-AREA CURVES DO
NOT OERATE THE SPECIF"lEO VALUE FOR Ie MAX;
TL
At distance 2: 1/8" in. (3.17 mm) from
235 _ _ _ __
~In accordance with JEDEC registration data.
175 200
CASE TEMPERATURE !TC1-·C
Fig. 2 - DiSSipation and derating curve lor al/

types.
.
IODS
PT {MAX 1·75W
'1--
' r---.
~~l\, '"
r .0 c~
~ r---~1
~
c
,r--"'"
r--i
.. '" ~
~
~
~
c
10
, E1 1 ~>
~"
~! ~
~ , '1-
~~
~ 4
""
, r-~
~ ;::;r---I 3 \ :'\ 'W,
"
·,~,,*o
~
, i
,
tt-
, IT, , !\ '0 0
, \ !'\!'{ , , ,
COLLECTOR-TO-EMITTER VOLTAGE (V CE)- V
92CM-33694 Fig. 3 - Thermal-cycling rating chart for all
Fig. - Maximum operating areas for all types (T~25°C). types.
288 ____________________________________ ~ _______________________________

----------------~----------------------------------------POWERTRANSISTORS
2N6738,2N6739,2N6740

CHARAC- VOLTAGE ~URRENT
2N6738 2N6739 2N6740 UNITS
TERISTIC V de A de
VCE IVBE IC liB Min.1 Max. Mln·IMax. Mln·IMax.
450 -1.5 - 0.1 - - - -

ICEV 550 -1.5 ~
- - 0.1 - - mA
650 -1.5 - - - - - 0.1
0.1
lEBO -8 0 - 2 - 2 - 2
0.001
r .. 'I
0.01
2 4 fie
OJ
46e
I
l" ,.
10
VCEO(sus)D 0.2a 0 300 - 350 - 400 - V PULSE WIDTH (tpJ-s
hFE 3 5a 10 40 10 40 10 40 Fig. 4 - Typical thermal-response character-

VBE(sat) 5a 1 - 1.6 - 1.6 - 1.6 istic for all types.
5a 1 - 1 - 1 - 1 '00 COLLECTOR- TO - EMITTER
VCE(sat) 0 VOLTAGE (liCE) -3 II
8a 4 - 2 - 2 - 2 ~
VCEX b
(Clamped ES/b) -5 5 1e 350 - 400 - 450 -
V ~
~
.
~IOO
~c
(;
L=170 pH,
,
RBB=5 n
-5 8
4
3e 200 -
-
250 -
-
300
0.5
-
- s
It', ~
~
~
~
ISlb 25 0.5 0.5
, -~
"
10 0.2 3 12 3 12 3 12
~
Ihtel t-5 MHz ; CASE TEMPERATURE ITcl ..
I I I -II
tT 10 0.2 15 60 15 60 15 60 MHz ~
g
10
.
,
Cobo t=0.1 MHz
td a
t rd
10e
5
5
1
1
50
-
-
300
0.1
0.5
50
-
-
300
0.1
0.5
50
-
-
300
0.1
0.5
pF
0.1
. . 1. . . . .~
I
COL.LECTOR CURRENT (ICI-A
10
,
t sd 5 1e - 2.5 - 2.5 - 2.5
, Fig. 5 - Typical dc beta characteristics for all
tt d 5 1e - 0.4 - 0.4 - 0.4
ps types.
,
tc I 8 IB·Ic/~
VCC=125 V,
L=170 pH,
z
0
~
. )
TC·- 4O•C
TC"12S·C
5 1e - 0.4 - 0.4 - 0.4 ~>4
Tc "2!5"C
RC=25 n .1
Collector clamped
to VCEX
~]
~~2 ~ ~
TC-125 0 C
'W
0°
,~
~.o
4,50 -1.5 - 1 - - - - ~~ (.\1,(.,.,61
.
~>O.l ,.~
,
550 -1.5 - - - 1 - - mA ~ ~i.~'"
'l. t,+f'i
ICEV
g •
~~'f,"\ I
650 -1.5 - - - - - 1
,
,
VCE(sat)
tra
5a
5
1
1
-
-
2
0.8
-
-
2
0.8
-
-
2
0.8
V ,
COLLECTOR CURRENT (lei-A
. . . 10
,
tsa 5 1e - 4 - 4 - 4 Fig. 6 - Typical collector-to-emitter saturation
'ZCS-lU81lli
tt d 5 1e - 0.8 - 0.8 - 0.8 voltage as a function of collector

,
t~ current for all types.
VCC=125 V, ps
L=170pH;
RC=25 n
5 1e - 0.8 - 0.8 - 0.8
Collector clamped
to VCEX
, R8JC
R8JA
'In accordance with JEDEC registration data. eVCB value.
apulsed: pulse dUration = 300 JiS, duty lac tor 5 2%. dVCC = 125 V, tp = 20 Jis.
bCAUTION: The sustaining voltage VCEolsus)
10
and VCEX MUST NOT be measured on a curve tracer. COLLECTOR CURRENT (leI-A
92CS-Utl ..

voltage as a function of collector
current for all types.
--------------------_______________________________________________ 289
POWER TRANSISTORS
2N6738,2N6739,2N6740
• co.L.LECTOR ';'TO-EMITTIER
VOLTAGf (VCE)- 5V
I
2 3
.0 COLLECTOR CURRENT (IC)-A COLLECTOR CURRENT (Icl-A
COLLECTOR CURRENT (Ie)-A
Fig. 10 - Typical saturated SWitChi~{/'9t6iq;;'9

Fig. 8 - Typical base-to,;,emittef vOltag;S-~~95a Fig. 9 - Typical saturated switching time
characteristics for all types. characteristics for all types.
function of collector current for all
types.
COLLECTOR CURRENT C1c1-A COLLECTOR CURRENT (I:cl-A

Fig. 13 - Typical 'aturated switching time
Fig. 11 - Typical saturated switching time Fig. 12 - Typical seturated switching time characteristics 8S a function of casa
characteristics for all types. characteristics for all types. temperature for all types.
V CLAMP
5 A 15 n 15 n CLAMPED v RATING
SA sn sn VCEO-l00V
RL" 25 n/30w
Ie
VCEX NON IND
RATING
ai, 02 " 2N6354

03 " 2N3762
10% VCEX 10"1. Ie (PEAK) Q4,05,
Q6,07 " CA3725 QUAD
TRANSISTOR
ARRAY.
Fig. 14 - Oscilloscope display for measurement
of clamped induction switching time * THIS CONNECTION
SHOULD BE MADE AS
(tel· CLOSE AS POSSIBLE TO
COLLECTOR OF
161-,.-----...,X" 90 % TRANSISTOR UNDER TEST
A 10%
f<J
tf -
~ A~B
B-C 24 n
** KELVIN (SENSING)
CONNECTIONS
~ .. x-y
tlK v-z NOTE: BATTERY SYMBOLS Vce, VBI' Va2'
, 'TRANSITION" X-W 50 F
- VB(CLAMP) INDICATE RIGOROUSLY FILTERED
i NOTE: TRANSITtONTIME
FROM 90% IS1 TO 90% 182
+~ VOLTAGE SOURCES AT THE CIRCUIT TERMINALS
TO ACCOMODATE THE FAST tr AND tf TIMES
IMUSTBELESSTHANO.3"•. 2g~
AND HIGH CURRENTS PRESENT IN THE CIRCUIT.
LL-20pS 50n = NOTE: SWI CLOSED FOR tr, ta. ff. SWI OPEN FOR fe·
MIN
FREQ= 500 Hz 92CM-304!58
92CS-304~e Fig. 16 - Circuit for measuring switching times.

Fig. 15 - Phase relationship between input and
output currents showing referencB
pOints lor specification of switching
times.
290 ____ ~ _______________________________________________________________

POWER TRANSISTORS
2N6738,2N6739,2N6740
a: LI.. 104 CASE TEMPERATURE (TC'-25·C
81-----.
i
~6
7
V'OOV
VCEORATING
!:!
~ sh- - - -
'"
~4
:J
U
a: 3 I CLAMPED A
~ TC~ 12~·C I VCEX RATlNG"-
:;l2
..J
..J
I
3' o~ ______ ~ ________-L_ " 6810 2 " 6 8102 2
COlLECTOR-lC-EMITTER VOLTAGE IVcel-V COLLECTOR-lO-BASE VOLTAGE IVCB1-V OR
COLLECTOR~TOwEM1TTER VOLTAGE EMITTER-le-BASE VOLTAGE {VEsl-:Y
ItZC$-U!l92
Fig. 18 - Typical output characteristics for aI/
92CS-304!55 types. Fig. 19 - Typical common-base input or output
Fig. 17 - Maximum operating conditions for capacitance characteristics as a
switching between saturation and function of col/ector-to-base voltage or
emitter-to-base voltage for aI/ types.
cutoff.
------______________________________________________ ~ __________ 291

2N6751, 2N6752, 2N6753, 2N6754
SA SwitchMax Power Transistors Features:

• 100% hlgh·temperature tested
High-Voltage N-P-N Types for 240 V Off-Line for 1OO'C parameters
Power Supplies and Other High-Voltage • Fast switching speed
Switching Applications • High voltage ratings:
VCEX =
450 -550V
The RCA·2N6751, 2N6752, 2N6753, and
2N6754 Switch Max series. of silicon
lIalto the design of Industrial hlgh·power • Low VcE!sat) at IC 5A =
switching circuits. Switching times, • Steel hermetic TO·204MA
n·p·n power transistors feature high· Including Inductive turn-off time, and package
voltage capability, fast switching speeds, saturation voltages are tested at 100'C,
and low saturation voltages, together as well as at 25'C, to provide Information
with high safe-operating·area (SO A) necessary for worst-case design. Applications:
ratings. They are specially designed for
The 2N6751, 2N6752, 2N6753, and 2N6754 • Off·line power supplies
use in off·line power supplies and are also
series transistors are supplied In steel • High·voltage Inverters
well suited for use in a wide range of in· JEDEC TO·204MA hermetic packages.
verter or converter Circuits and pulse· • Switching regulators
wldth·modulated regulators. These high·
voltage, hlgh·speed transistors are • Formerly TA9153, TA9153A, TA9153B, TERMINAL DESIGNATIONS
100·per-cent tested for parameters essen·
2N6751 2N6752 2N6753 2N6754
VCEV
VBE = -1.5V ............................. . 800 850 900 1000 V
VCEX(Clamped)
* VSE = -1.5V ............................. . 450 500 550 550 V
~~~g:::::::::::::::::::::::::::::::::::::::
400 450 500 500 V 92CS-34134
* 8 V
IC(sal) " ................................... . 5 A
JEDEC TO·204MA
IC .... ·· .. · .. ····· .... · .. ···· .... ··· .. ·· .. ·· 10 A
:~~.::::::::::::::::::::::::::::::::::::::::
10 A (See dimensional ouillne "C C".)
* 5 A
* PT
TC<25'C ................................. . 150 W
.. T C " 25'C, derate linearly .................... . 1 W/'C
i~,~'::::::::::::::::::::::::::::::::::::::::
-65to 175 'C
* -65to 200 'c
* TL
At distance" 1/16 In. (1.58 mm) from
seating plane for 10 s max .................. . 235 'c
CASE TEMPERATURE !Tc1-"C nCS-32042
Fig. 2-Dlssipation derating curve

for a/l types.
1j (MAXj·200·C
,
··1\~R"~>
• r
r
;
z
'\ ~"A~",>",
·
0
~
~
c
~
\ '" 1'- ~~,~/.'o.
I~~I~. .rK ./1..
c
~
, r--
~
10
, 8 , ~,
8 10" 1015 r •
92CS- 32041R\
NUMBER OF THERMAL CYCLES! IZCS- 50""
Fig. 1-Maxlmum operating areas for a/l types (TcJ. Fig. 3- Therma/·cycling chart for all types.
292 __________________________________________________________________
2N6751, 2N6752, 2N6753, 2N6754

VOLTAGE CURRENT
Vdc Adc
VCE I V8E IC I 18 Min. I M8x. Mln.1 Max.
TC = 25'C
- - -
---
800 --1.5
- - - -----
0.1
• ICEV 850- -1.5 - - - - 0.1 mA
• lEBO -8 0 - 2 - 2
• VCEO(sus)b 0.28 0 400 - 450 - V 0.001 2 4 6 BO.OI 2 " 6 '0.1 2 " 68 1 2 4 68 10
PULSE WIDTH (Tp J-S
• hFE 3 511 8 40 8 40
• VBE(sat) 511 1 - 1.3 - 1.3 Fig. 4- Typical therma/·response
511 1 - 1 - 1 characteristic for all types.
• VCE(sat)
108 3 - 3 - 3 V COLLECTOR-TO- EMITTER
VCEXb
(Clamped ESlb) -6 5 1C 450 - 500 -
L = 17Ol'H
ISib 30 5 1 - 1 - 5
• Ihfel f=5 MHz 10 0.2 3 12 3 12
z I'.
10 0.2 15 60 15 60 MHz ~ 2tc;;:'SE lEt.lf'?tJ.\It ~
I.
fT
~ IOar:--, lie 1
• Cobo f=0.1 MHz 10d 50 250 50 250 pF
~
• td e -6 5 1 - 0.1 - 0.1 ~~-+--~-rt--+--t-~~-t--i-~

• tre -6 5 1 - 0.4 - 0.4 g
• tse -6 5 1C - 3 - 3 0.1 I 2 " 8 8 10 100
• tfe -6 5 1C - 0.4 - 0.4

1'5
COLLECTOR CURRENT II.e )-" .:ZCS-S2044
• tc Fig. 5- TypIcal dc beta characterIstics

VCC = 250 V, for all types.
L=170I'H, RC = -6 5 1C - 0.4 - 0.4
50 Q, Collector
clamped to VCEX
.g
0
IB"1c /5
t ."
TC = 100'C
800 -1.5 - 1 - -
0
~
~t
I
. ~
~
Vil/:t
0
'j-
• ICEV 850 -1.5 - - - 1

mA
.=
~~
1\
/l%{~~ ,-
~~ "
- -
~~s~
• VCE(sat) 58 1 1.5 1.5 V
~~
• tre -6 5 1 - 0.6 - 0.6
• tse
• tfe
• tc
-6
-6
5
5
1C
1C
-
-
5
0.7
-
-
5
0.7
1'5 i ~V 1 .
0
(J
,
0.1
0.1
L
V
,
COLLECTOR CURRENT I Ie }-A
..
92CS-l204!1
10
VCC = 250 V,
L = 1701'H, RC = -6 5 1C' - 0.7 - 0.7 Fig. 6- Typical collector·to-emitter saturation
· 50 Q, Collector
clamped to VCEX
10 5 'C!W
~
~
o
I
,
r--------:- 40.C
• In accordance with JEDEC registration data. ~ 25·C~~\2!l·C

~:;- 8~E lEtApEtV,;URE n~c_,-+--t-i-t-~-I
a Pulsed duration = 300 I's, duty factor';; 2%.
b CAUTION: The sustaining voltage VCEO(susj and VCEX MUST NOTbe measured on a curve tracer. ~~'r--------r----t---t--r-t-t-+~
~.3
e 18 1 = -182 d VC8 value e VCC = 250 V, tp = 20l'S
~
~
01
, .,
COL.LECTOR CURRENT t:I C}-A
10
Fig. 7- Typical base·to-emitter saturation

current for aI/ types.
_____________________________________________________________________ 293
2N6751,2N6752,2N6753,2N6754
ELECTRIC~L CHARACTERISTICS
TEST CONDmONS LIMITS
VOLTAGE CURRENT
Vdc Adc
VCE VBE I IC IB I Min. I Max. Mln.1 Max.
TC = 25'C
900 -1.5 - 0.1 - -
• leEV 1000 -1.5 - - - 0.1 mA
• lEBO
• VCEO(sus)b
• hFE 3
-8 0
0.28
511
0
-
500
8
2
-
40
-
500
8
2
-
40
V
QI
. ..
COLLECTOR CURRENT (ICJ-A
10
Fig. 8-Typical bBse·to",mltter voltage as a

• VB8sat ) 511 1 - 1.3 - 1.3 function of col/ector current for aI/
• VCE(sat)
511 1 - 1 - 1 types.
loa 3 - 3 - 3 V
Ver:xb
(Clamped ESIb) -6 5 lC 550 - 550 -
L = 170"H
ISib 30 5 1 - 1 - s
• Ihlel 1=5 MHz 10 0.2 3 12 3 12
IT 10 0.2 15 60 15 60 MHz
• Cobo 1=0.1 MHz 1()11 50 250 50 250 pF
• tde -6 5 1 - 0.1 - 0.1
• tre -6 5 1 - 0.4 - 0.4
• tse -6 5 lC - 3 - :J
tie -6 5 lC - 0.4 - 0.4 ,,5 COLLECTOR-TO-EMITTER VOLTAGEtvCE'-V 9tCS-3Z~"RI
tc Fig. 9- Typical output characteristics

Vee = 250 V, for al/ types.
L=170"H, Re = -6 5 lC - 0.4 - 0.4
50 Q, Collector
clamped to VCEX
TC = 100'C
900 -1.5 - 1 - - mA
• ICEV 1000 -1.5 - - - 1
• VCE(sat) 511 1 - 1.5 - '1.5 V
• tre -6 5 1 - 0.6 - 0.6
• tse -6 5 lC - 5 - 5
• tie -6 5 1C - 0.7 - 0.7 ,,5
• Ic
Vce = 250 V,
L = 170"H, RC = -6 5 lC - 0.7 - 0.7 COllECTOR CURRENT (Ie )-A
· 50 Q, Collector
clamped to VeEX
Fig. 10-Typical saturated switching time
'1 ReJC 10 5 'CIW

a Pulsed duration = 300 !lS, duty factor" 2%.
b CAUTION: The sustaining voltage VCEO(sUS) and VCEX MUST NOTbe measured on a curve tracer.
c 18 1 = -IB2 d VCB value e VCC = 250 V, tp = 20 "s
COLLECTOR CURREPoIT {Ie )-A
Fig. 11-Typicaf saturated switching time

294 ______________________________________________________________________
POWER TRANSISTORS
2N6751, 2N6752, 2N6753, 2N6754

CASE TEMPERATURE (TC )-2:;"C CASE TEMPERATURE (Tel-IOO'C 1 C "5.
-. .Ie,"IA, IB 2"ZA
VCC·2~OV
tp '20~s
18, • I A, 182" 2A
IICC=250\1
I • 20J'os
l.e"IS2"IA
....CC. 250 V
-" Ip' 20~1
~ ,~
.
~
>
"
,
<
o
~
.
o
<
o
I, ~
2 3 4 :; 6 20 40 60 80 100 120 140
COLLECTOR CURRENT (Ie I-A '32CS-320!!i2RI
COLLECTOR CURRENT (I.e}-A CASE TEMPERATURE lTe)-'C 9ZCS-UO!!i!RI
Fig. 12- Typical saturated switching time Fig. 13-Typlcal saturated switching time Fig. 14- Typical saturated switching time
characteristics for all types. characteristics for all types. characteristics as a function iJf
case temperature for all types.
CASE TEMPERATURE (Tel' 25"

10,----,
1 ....0. FREQUENCY 1t)-I1*b:
tt .
f=:=::
~~
Clbo
I>
, Vera RATI NG
~Zlo!
V
«(~ a
!::.;::; &
'OOV
~§ " r--
I-~
oa
~81oZ
l
r- Co..,
ww
~::1
ii.. ,
.
I
a
I CLAMPED
I VCEX RATING /"
A' VCEX
RATING
88'0
10 .. 61,0
COLLE~-TO-EIAS£
Z .. '102
,
VOLTAGE {lJce1-V
.. '10'
I
CA EMITTER-lO-SASE IJOlTAGE{IJEBJ-1J 9l!C9-320S4 OL-______~______-L~ 10% VCEX 10% Ie (PEAK)

Fig. 15- Typical common·base Input or output COLLECTOR-TO-EMITTER VOLTAGE 92CS-32800
capacitance characterlstlcll as a
function of collector·to·base Fig. 16-Maximum operating conditions for Fig. 17-0scilloscope display for measu,...
voltage or emltter·to·balle voltage switching between saturation ment of clamped Induction
for all types. ' and cutoff. switching time (t 01.
IC R1 R2 VCEX CLAMP
15 A 115 !1 115 Q !CLAMPED VCEX RATING 1
QI, Q2 ,,2N6354
Q3 = 2N3762
04,05,
O.OOIJ.LF 06,07 : CA~725 QUAD
TRANSISTOR
ARRAY
*THIS CONNECTION
SHOULD BE MADE AS
COLLECTOR OF
0.005 }J-F TRANSISTOR UNDER TEST
24 n
**
KELVIN (SENSING)
CONNECTIONS
NOTE, BATTERY SYMBOLS VCC. VBI ,V 2' a
"BtCLAMPl INDICATE RIGOROUSLY FILTERED
150l'F
TO ACCOMODATE THE FAST Ir AND tf TIMES
2~.':TL~ AND HIGH CURRENTS PRESENT IN THE CIRCUIT
LL 20 1'5 50n = VB2 NOTE SWI CLOSED FOR tr, t$' ff. SWI OPEN FOR Ie
MIN
ADJ..FOR I62
FREQ: 500 Hz
92CM-32103
Fig. IB-Clrcull for measuring switching times.
------------------------------------_________________________________ 295
2N6771, 2N6772, 2N6773

Features:
1-A Swilt:IIMid • 100% High~ Temperature Tested for 1250 C
VERSAWATT Transistors Paramefers
High-Voltage N-P-N Types for Off-Line Power Supplies and • High Voltage Ratings:
VCEX=350 V to 450 V
Other High-Voltage Switching Applications .
• Low VCE(sat) at Ic=1 A
The RCA-2N6771, 2N6772, and 2N6773" are essential to the design of Industrial • VERSAWATT package
SwltchMax series of silicon n-p-n power high-power switching circuits. Switching
transistors feature high-voltage capability, times, includin~ inductive turn-off time,
fast switching speeds, and low saturation and saturation voltages are tested at 1250 C, Applications:
voltages, together with high safe- as well as at 250 C, to provide information • Off-Line .Power Supplies
operating-area (SOA) ratings. They are necessary for worst-case design. • High- Voltage Inverters
specially designed for use in off-line power The RCA-2N6771, 2N6772, and 2N6773 • Switching Regulators
supplies and are also well suited for use in a series transistors are supplied in the
wide range of Inverter or converter circuits JEDEC TO~220AB VERSAWATT plastiC
and pulse-width-modulated regulators. package.
are 100-per-cent tested for parameters that
"Formerly RCA8863A, RCA8863S,
and RCA8863C, respectively.
B
2N6771 2N6772 2N8773 C
VCEV
VSE=-1.5V ••.••.•••.••••••••...•••.••••••.••.
VCEX(Clamped)
VSE=-1.5V ••••.••.•••.•••.••.•••..••.••.••..•
450
350
550
400
650
450
V
V
(FLANGE)
BOTTOM VIEW
E E
C
VCEO •••••••••.••..•••.•••••.••.•••...•.•••••..• 300 350 400 V 92CS-27519
8 V
VESO············································
IC(sat) ••••.••.••.••••.•...•.••.•.•.•••.•.••..•••. A (See dimensional outline "S".)
• IC· .•••.•.••••••.••••••.••..•••....•.•.••.•••••.• 1 A
ICM •••••••.•.••.•••.•.••••••.•••..••.••.•••.•••• 2 A
NOTE~ CLAR[NT DERATING AT CONSTANT VOLTAGE
Is .............................................. . 0.6 A APPLIES ONLY TO THE OISSIPIlTION-UMITEO PORTION
• P,- . or MAXIMUM·OPERATING·AREA CURVES 00
NOT OERATE THE SPECIFIED VAWE FOR Ie MAX.
TC up to 25DC .•••.••••.••..•.•.•..•••.•••.•••• 40 W
T C above 25 DC, derate linearly .•. ; ..•..••.••••.• 0.32 W/DC
-65 to 150 ____ DC
Tstg, TJ .••••.••.•••••••.••.•••.•••••..••..••••••
• TL
At distance ~ 118" in. (3.17 mm) from
seating plane for 10 s max. . .••..••.•••••.•••. 235 °c
'.In accordance with JEDEC registration data.
25 50 15 100 125 I!IO 175 200

CASE TEMPERATURE ITCI--C
NUMB£R 0' THERMAL CYCLES

UC ... IIOOI,,1
Fig. 3 - Thermal-cycling rating chart for a/l

Fig. f - Maximum operating areas for all t;;~;'- ...,, types.
286~--------------------------------------------------------------
----------------------____________________________________ POWERTRANSISTORS
2N6771,2N6772,2N6773
ELECTRICAL CHARACTERISTICS ~'OO1
~ ~
TEST CONDITIONS LIMITS ~ 2~-r~~H*--+-rTtrtrrr--ri-Hitm
2N6771 2N6772 2N6773 UNITS ~ '0,
TERISTIC Vde A de ~
VC.;jVBE IcllB MlnjMax. Min.' Max. Mln.1 Max. §
~
TC=25°C ~
~
I
,
450 1.5 - 0.1 - o
w
ICEV 550 -1.5 - - - 0.1 - - mA ~
650 -1.5 - - - - - 0.1
~
~
· lEBO -8 0 - 2 - 2 - 2
ZO_I
0.01 4 ft80 " ~ ft 8 I
· VCEO(sus)b
• VCE(sat)
0.2a 0
1a 0.2
300
-
-
1.0
350
-
-
1.0
400
-
-
1.0 V
PULSE WIDTH hpl-S
92CS-33682
Fig. 4 - Typical thermal-response character-

• VBE(sat) 1a 0.2 - 1.2 - 1.2 - 1.2 istics for all types.
· hFE
3
3
0.3 8
la
20
10
100
50
20
10
100
50
20
10
100
50
· VCEXb
(Clamped ES/b) -5 1 O.le 350 - 400 - 450 - V
L=450 pH,
RBB=50 (1
· ISlb 100 0.4 0.5 - 0.5 - 0.5 - s
· IT Ihlel 1-1 MHz 10
10
0.2
0.2
10
10
50
50
10
10
50
50
10
10
50
50 MHz
· Ida
Cobo 1-0.1 MHz 10e 20 60 20 60 20 60 pF
· 1 0.2 - 0.05 - 0.05 - 0.05
·· Ird
Isd
1
1
0.2
0.2e -
- 0.2
2.5
-
-
0.2
2.5
-
-
0.2
2.5
0.01 " 6 90 . 1 Z "6 8 I
.. 6 8'0
92CS- 33663
· lid 1 0.2e - 0.4 - 0.4 - 0.4 Fig. 5 - Typical dc beta characteristics for all
· tc
VCC=200 V,
ps types.
L=450 pH.
RC=200 (1
1 0.2e - 0.4 - 0.4 - 0.4
Colleclor clamped
to VCEX
TC - 125°C
450 ,.-1.5 - 1 - - - -
· ICEV 550 -1.5
650 -1.5
-
-
-
-
-
- -
1 -
-
-
1
mA
· VCE(sal)
• tra
18
1
0.2
0.2
-
-
2
0.5
-
-
2
0.5
-
-
2
0.5
V
I
• ts d 1 0.2e - 4.5 - 4.5 - 4.5

COLLECTOR CURRENT I IC)-A 92CS-33684
Fig. 6 - Typical collector-ta-emitter saturation

• lid 1 0.2e - 1.3 - 1.3 - 1.3 voltaga as a function of collector
· Ic
VCC=200 V. JlS
currant for all types.
L=450 pH,
RC=200 (1
1 0.2e - 1.3 - 1.3 - 1.3
Collector clamped
10 VCEX
• R8JC 20 J 1 - 3.12 - 3.12 - 3.12 ·CIW

R8JA - 70 - 70 - 70 '·CM
"In accordance WIth JEDEC regIstratIon data. eVCB value. 81Bl = -IB2'
·Pulsed: pulse duration = 300 !is, duty factor :$ 2%. dVCC = 200 V, tp = 20 Jis.
bCAUTION: The sustaining voltage VCEO(SUS)
0.1
and VCEX MUST NOT be measured on a curve tracer. I
COllECTOR CURRENT (Ic;I-A
,2CS-33GB3

current for all. trpes.
------------------------------------_________________________________ 297
POWERTRANSISTORS __________________ ~ ____________________________________
2N6771,2N6772,2N6773
COLLECTOR CURRENT IICI-A COLLECTOR CURRENT (:tc;l-A

92CS-S3686 12CS-3se . .
Fig. 8 - Typical base-to-emitter voltage as a Fig. 10 - Typical saturated-switchlng-tlme

function of collector current for all Fig. 9 - Typical saturated-switching-time charac- characteristics as a function of col/ector
types. , teristics for all types. current for all types.
«
I
U
!:! I
....
is 0.8
II:
Bo. 6 CLAMPED
VeEX RATING .....
....~O.4
"j020'--_ _ _ _ _ _ _ _ _ _.1-._
8
COLLECTOR-TO-EMITTER VOLTAGE
10% Ie (PEAK)
92CS-33692
92CS-503agRt
CASE TEMPERATURE {Te l--C .CS-UHO
Fig. 11 : Typical saturated-switching-time Fig. 12 Maximum operating conditions for of clamped induction switching time
characteristics as a function of case switching between saturation and (td·
temperature for all types. cutoff.
Ie RI RZ VCEX CLAMP
I tA II:'t'~O ICLAMPED VCEXRATINGI
RLa 200nIlOW
ISI-·..-----...,X'"'gO % NON INO
t(j - A-8
A 10% t,· 8-C
o --------- ------ t,"X-Y
tf-V-Z
SWI
QI, Q2 .. 2N6354
tTRANSITION ~ )(-w
Q3 • 2N3762
FROM 90% 181 TO 90% '82 Q4,05,
MUST BE LESS THAN 0.3 pl. 06,07 : CA3725 QUAD
TRANSISTOR
ARRAY.
*THIS CONNECTION
SHOULD BE MADE AS
COLLECTOR OF
24 n
-* TRANSISTOR UNDER TEST
** KELVIN (SENSING)
CONNECT IONS
NOTE, BATTERY SYMBOLS Vcc, Val' VB2'
~501LF VB{CLAMP) INDICATE RIGOROUSLY FILTERED

Fig. 14 - Phase relationship between input and TO ACCOMOOATE THE FAST tr AND ff TIMES
2gTL~ AND HIGH CURRENTS PRESENT IN THE CIRCUIT
output curren'ts 'showing reference I I 50n =
1....,..1...... 20 Jl-S Val NOTE· SWI CLOSED FOR tr, f, ,If. SWI OPEN FOR Ie.
points for specification of switching MIN ADJ. FOR t82
times. FREQ z 500Hz 92CM-33693
Ag. 15 - Circuit for measuring switching times.
298--________________________________________________________ ~ _________
__________________________________ ~ ____________________ POWERTRANSISTORS
2N6771,2N6772,2N6773
4 • 110 .. a 1100 2. "."000

COLLECTOR-TO-BASE VOLTAGE (IIca1-V OR
EMITTER-lO-BASE VOlTAGE CVE8J-V
Fig. 16 - Typical output characteristics lor all .zcs--nul
types. Fig. 17 - Typical common-base Input or output
,capacitance characterlatlcs as a
lunctlon 01 collector-to-base voltage or
emltter-to-base voltage lor all types.
________________________________________________________________________ 299
POWERTRANSISTORS ________________~--------------------------------------
2N6774, 2N6775, 2N6776
15-A SWilt:hMiIf Power Transistors with Integral Antiparallel Diodes
High-Voltage N-P-N Types for Off-Line Power

Supplies and Other High-Voltage Switching Applications
The RCA-2N6774, 2N6775, and 2N6776" series of Switch- 'Ieled for high-current switching, because each provides a
Max transistors feature electrical performance similarto the distributed base-emitter resistance and anti parallel diode
popular 2N6676, 2N6677, 2N6678 devices plus the added without the corresponding wiring congestion. These high-
features of an integrated anti parallel diode and base- voltage, high-speed transistors are 100-per-cent tested for
emitter resistor. The use ofthese transistors can often elimi- parameters that are essential to the design of high-power
nate the need for some of the discrete base-resistors and switching circuits. Switching time, including inductive turn-
high-voltage diodes in high-power designs such as half- off time, and saturation voltages are tested at 100°C, as well
bridge and bridge converters, variable-frequency motor as at 25°C, to provide information nece$saryforworst-case
drivers, and ultrasonic power generators. They are spe- design.
cially suited for systems in which several devices are paral- The 2N6774, 2N6775, and 2N6776 transistors are supplied
"Formerly RCA Dev. Types Nos. TA9177A, TA9177B, and TA9177C, in steel JEDEC TO-204MA hermetic packages.
respectively.
Features:
Applications: • 100% High-temperature tested for
100° C parameters
• Off-line power supplies
• High-voltage inverters • Fast switching speed
• Switching regulators • High voltage ratings:
VCEX = 350 V to 450 V
• Low VCE (sat) at Ie = 15 A
• Steel hermetic TO-204MA package
• Fully integrated antiparallel diode
IV. (VECO ) < 2 V@ 15A)
• Fully integrated base-emitter resis-
tor (Typ. 100 ohms)
I
CASE TEMPERATURE (TC)-*C
Fig. 1 - Dissipation and ISIb derating curves for

a/l types.
JEDEC TO-204MA 92CS-34026
(See dimensional oulline "A".) Fig. 2 - Schematic diagram for all types.
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6774 2N6775 2N6776

·VCE.V
VBE =-1.5 V ........................................... .. 450 550 650 V
"VCEX (Clamped)
VBE = -1.5 V ........................................... .. 350 400 450 V
·V CEO •••••••••••••••••••••••••••••••••••••••••••••••• : ••••• 300 350 400 V
·V EBO ' •••• ' •••••••••••••••••••••• ' . ' •••••• ' . ' •••••••••••••• B V
Ic (sal) .................................................. .. 15 A
"Ic .............................•........................... 15 A
leM •••.••••.•••••.••••••••.••.••••••••.••••••••••.•.••.••• 20 A
·1 •...........•...•.•....................................... 5 A
·PT
Tc up to 25°C .......................................... .. 175 W
T cabove 25°C, derate linearly ......... , ................ .. W/'C
*T.tg, T J •••••••••••••••••••••••••••••••••••••••••••••••••••• 6510200 °C
"TL
AI dislance ~ 1/16 in. (1.58 mm) from
seatina Diane for 10 s max ...... , ......................... . 235 °C
"In accordance wilh JEDEC regislration dala.
300 ________________________________________________________________________
_______________________________________________________ POWER TRANSISTORS
2N6774,2N6775,2N6776
VOLTAGE CURRENT
V de A de 2N6774 2N8775 2NI778
CHARACTERISTIC VeE I V.E Ie I I. Min. I Max. Min. I Max. Min. I Max. UNITS
450 -1.5 - 0.1 - - - -

ICEV 550 -1.5 - - - 0.1 - - mA
650 -1.5 - - - - - 0.1
leBo -8 0 40 200 40 200 40 200
VeEo (sus) b. 0.2" 0 300 - 350 - 400 - V
hFE 3 15" 8 - 8 - 8 -
V.E (sat) 15" 3 - 1.5 - 1.5 - 1.5
VeE (sat)
15" 3 - 1 - 1 - 1
V
15" 3 - 1.5 - 1.5 - 1.5
VF (VECO) 15 - 2 - 2 - 2
VF (VECO) 100 3.5 (Typ.) 3.5 (Typ.) 3.5 (Typ.)
VeEx b.t (clamped E./ b )
L = 50JlH, RBB = 20
-6 15 3 350 - 400 - 450 -
30 5.9 1 - 1 - 1 -
IS/b s
100 0.25 1 - 1 - 1 -
Ih,"1 f = 5 MHz 10 1 3 10 3 10 3 10
Ir 10 1 15 50 15 50 15 50 MHz
C Obo f = 0.1 MHz 10e 150 500 150 500 150 500 pF
tdd -6 15 3 - 0.1 - 0.1 - 0.1
t," -6 15 3 - 0.6 - 0.6 - 0.6
t: -6 15 3" - 2.5 - 2.5 - 2.5
tt" -6 15 3" - 0.5 - 0.5 - 0.5
JlS
trr diode 15 - 3.0 - 3.0 - 3.0
te' Vee = 200 V,
L = 50 JlH, Re ::; 13.50
-6 15 3" - 0.5 - 0.5 - 0.5
Te - 100°C
450 -1.5 - 1 - - - -
ICEV 550 -1.5 - - - 1 - - mA
650 -1.5 - - - - - 1
VeE (sat) 15" 3 - 2 - 2 - 2 V
t,d -6 15 3 - 1 - 1 - 1
t,d -6 15 3" - 4 - 4 - 4
t,d -6 15 3" - 1 - 1 - 1
JlS
te' Vee - 200V,
L = 50 JlH, Re ::; 13.5 0
-6 15 3" - 0.8 - 0.8 - 0.8
ROJe 10 5 - 1 - 1 - 1 °C/W
a Pulsed: pulse duration = 300 JlS, duty factor::; 2%.

b CAUTION: The sustaining voltage VeEo (sus) and VeEx MUST NOT be measured on a curve tracer.
'In accordance with JEDEC registration data.

eVe. value.
dVee = 200 V, t p = 20 Jls.
9 18 ,=-1 82
'Collector clamped to VeEx.
301
POWERTRANSI~TORS ________________________________________________________
2N6774,2N6775,2N6776
•I
··
t ,
a
~~
c:.,...
i 100
~+.
~ 8
~}-"<\l'e-
~
~ . :\
6
;:,
;
"'-. ~"'·"'4
~ "
~
g
~ I,g , ':.1\),"" I~
· , ,
10 . , , ., ,
10
......
" 10"
~
..
u
:l
o
I
Fig. 4 - Thermal-cycling chart for aI/ types .
u
10.,
,
I ·,
~
I§ ··,
I
0.1 un='!;""'-'!"""~~-"""~'--:-6:-:.==
10 100
;----
~0'1
·,••
I
92CM·34D50
Fig. 3 - Maximum operating areas for all types (Tc = 25°C).
0.01
24.82468246' 24'.
0.001 0.01 0.1 I 10
PULSE WIDlH (1,1-'

for al/types.-
j008 COLLECTOR -TO-EMITTER VOLTAGE (VeE) = 3 V 4 Ie. IC/5
2" 6
I
!i <:,~.. ~>
'" 4 I---
~">I.
>" ~-}
~
2:
"4> <S
~;P~
V) i?
...~
"'0
2 ""000"
Z
~~I ~
"..... ~
W
~ ~5
w> ,
~
-40-' -~~.\oO'C
2.5·C ~1\)~fl\~C.'I
~40·c
~ 10 i
, ,
~I'
;
~
g
6
4
2 4 6 ,
10.
COLLECTOR CURRENT
'" 2
Ue) - A
4 6 , ICC
92CS·30385
COI..LECTOR CURRENT(IcI - A tles-5O'"
n.'
2 . .'1. 10
COLLECTOR CURRENT(IC) -A
, .. '-..
100-
nCS·5Q3711i
Fig. 7 - Typical col/ector-to-emitter saturation Fig. B - Typical base-to-emitter saturation voltage

Fig. 6 - Typical dc beta characteristics for all types. voltage characteristics for aI/types. characteristics for a/l types.
JUNCTION TEMPERATURE
!
., 700 ~T~: : ~:;~ 3A
Vee·2OO V
o tp ·20 ....
600 L .~O}'H
z
'"~ I! 500
e!
~i400
<"
~~
o~'300
~-
g 200
I,
~ 100 COLLECTOR CLAMPED TO I

~ VCE)( FOR te ONLY
0.
8 IZ 16
COLLECTOR-TO-EMITTER VOLTAGE (VCE1-V COLLECTOR CURRENT (Icl-A 92CS~ 3037) [COLLECTOR CURRENT (lcl- A
'2:CS-30374
Fig. 10 - Typical saturated-switching-time. charac- Fig. 11 - Typical saturated-switching-time charac-
Fig. 9 - Typical output characteristics for aI/ types. teristics at T, = 25° C as a function of teristics at T, = 100° C as a function at
collector current fOr ail types. "Collector current for a/ltypes.
302 _______________________________________________________________________
POWER TRANSISTORS
2N6774,2N6775,2N6776
JliNCTION
TEMPERATURE (TJl "IOO·C
~800
I 6 FREQUENCY (1). , MHz
I S .:3A VeE ~-5V
I82 ~ 5 A MAX.,Lo!50 I'H ~ 4
vee· zoo
tp :20 $
V
~ '~~--+-~+--+--4-~4--4--~~
I,
cl 300
~200 I,
:J
~ 100
o
COLLECTOR CLAMPED TO VCEX FOR tc
4 6 B 10 12
COLLECTOR CURRENT tIC)-A
14
"
92CS-3051!10 JUNCTION TEMPERATURE ITJI--C ~zcs
. ,. 10
• s.
COLLECTOR-TO-BASE VOLTA.GE (VCB)-V 92CS-34131
10'
. ,
10'
Fig. 12 - Typical saturated-switching-time charac- Fig. 13 - Typical saturated-switching-time charac- Fig. 14 - Typical common-base output (Cob~f
teristics at·
TJ = 100°C as a function of teristics as a function of junction temper capacitance characterjstics 10,-a17 types.
collector current for all types . aturi! 70r- iJjj types.
..l,
•
"
!j
.----.-- _2 Nsn4
_2 N6775
ffi K2 N6716
il!
il Te;s'loooe
a:
o
t;
w
-' VCEX
-'
o RATING
"0 10D 200 300 400
350 450
CLAMPED COLLECTOR -TO- EMITTER
VOLTAGE [VCEX (CLAMPEOl]-V
92CS-~40" 10% VCEX 10% Ie (PEAK)
Fig. 15 - Maximum operating conditions for Fig. 16 -' Typical antjparallel diode forward voltage Fig. 17 - Oscilloscope display for normalized
switching between saturation and drop characteristics. measurement of clamped inductive
cutoff for all types. switching time (tel. •
RL" 13.5 n/30W

NON INO
lSI --.-------""X"'90 %
QI, Q2 • 2N6354 A 10%

03 = 2N3762
D2540M
Q4,05,
·O.OOII'F Q6,Q7 ,. CA3725 QUAD
TRANSISTOR
VCC AS_+ ARRAY.
SPECIFIEO--
*THIS CONNECTION
SHOULD BE MADE AS
COLLECTOR OF
TRANSISTOR UNDER TEST 92CS-3038IRt
fc:t-A-B ts- X - Y
24 n ** ** KELVIN SENSING
CONNECTION t,-a-c tt-Y-Z
ttr ....ition - X-W
NOTE: BATTERY SYMBOLS VCC. VBI 'VB2' NOTE: TRANSITION TIME
VB (CLAMP) INDICATE RIGOROUSLY FILTERED FROM 90% IB, TO 90% I~ MUST
l'OI'F
VOLTAGE SOURCES AT THE CIRCUIT TERMINALS BE LESS THAN 0.5,1.1"
2g:TL~
AND HIGH CURRENTS PRESENT IN THE CIRCUIT. Fig. 19 - Phase relationship between input and
U-20~S 50n = output currents showing reference points
MIN
va2 NOTE: SWI CLOSED FOR t r , ts' tf. SWI OPEN FOR te.
ADJ. FOR 1B2 92CM-340!52 lor specification of switching times.
FREO: 500 Hz
__________________________________________________________
~
-
-
-
-
-
-
-
-
-
-
-
-
3
0
3
304 _____________________________________________________________________
Power Transistors
Pro Electron Types
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ _ 305
POWERTRANSISTORS ______________________________________~----------------
80142
Hometaxial-Base, High-Power Silicon N-P-N Transistor

Rugged General·Purpose Device For Commercial Use Features:
The RCA·BD142 is a hometaxial·base diffused-junction silicon • Maximum-safe-area-of-operation curves

Applications:
n-p-n transistor intended for a wide variety of intermediate- • low saturation voltage
power and high-power applications. It is especially suited for • High dissipation rating
use in audio and inverter circuits at 12 volts. • Thermal-cycling rating curve
• High·fidelity amplifiers
The 80142 is supplied in a JEDEC TO-3 hermetic steel • Solenoid drivers
package. TERMINAL DESIGNATIONS
• 12-V audio and inverter circuits
MAXIMUM RATINGS.Absofute·Maximum Values

COLLECTOR·TO·BASE VOLTAGE VCBO 50 v
COLLECTOR·TO·EMITTER SUSTAINING VOL TAGE
With base open VCEO(SUS) 45 v
With base reverse bias VBE '= -1.5 V VCEV(sus) 50 v
EMITTER-TO-BASE VOLTAGE VEBO V
CONTINUOUS COLLECTOR CURRENT 'C 15 A
'B 7 A
PT
At case temperatures up to 25°C 117 w JEDEC TQ·3
At case temperatures above 25°C Derate linearly to 200D C
TEMPERATURE RANGE:
Storage and Operating (Junction) -65 to ... 200 (See dimensional outline "A".)
PIN TEMPERATURE lOuring Soldering)
At distances :? 1132 in. (0.8 mm) from seating plane for 10 s max. 235 "c
COLLECTCA-TO-EMITTER VOlTAGE IVCE )04V

CASE TEMPERATURE (TC)025"C
i I.' V ~
~ I.'
lL
IJ :.2 /
"
~ \
~ 0
o. \.
~
. .. . . ..
o Q
, , ,
'10 5 001 0.1 I I 1.5 2
NuMBER OF THERMAL CYCLES COULClUR ~ENT IICI-A BASE-To-EMITTER VOLTAGEIVBE)-V
Fig. 2 - Typical gain-bandwidth product.

Fig. 1 - Thermal·cycling rating chart Fig_ 3 - Typical transfer characteristics_
SASE-TO-EMITTER VOLTAGEIV~-V
92cs ..... n07RI
Fig. 4 - Maximum safe area of operation. Fig. 5 - Typical input characteristics_
306 __________________________ ~ ___________________________________________

POWER TRANSISTORS
80142
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tel = 25°C Unless Otherwise Specified.
TEST CONDITIONS
CHARACTERISTIC SYMBOL VOLTAGE CURRENT LIMITS UNITS

Vdc Adc
V CE V EB V BE IC IB MIN. MAX.

With base-emitter junction 40 -1.5 - 2
'CEV mA
reverse-biased
Emitter Cutoff Current 7 - 1 mA

'ESO
Sustalnmg Voltage"
With base open \,'CEO lsus ) 0.2 0 45 - V
With base-emitter junction -1.5 0.1 50 -

VCEV(susl
reverse-biased
DC Forward Current
Transfer Ratio hFE 4 4" 12.5 160
Base-Io-Emltter Voltage VSE 4 4" - 1.5 V
Saturation Voltage Vce(satl 4" 0.4 - 1.1 V
Common· Emitter , Small-

Signal. Short-CirCULI,
Forward Current Transfer hie 4 1 10 -
Ratio
If 0 1 kHll
Emitter. Small,Slgnal,
Sheri-CirCULI, Forward I hfel 4 1 2 -
Cunent Trans!er Ratio
II 00.4 MHzl
Gam-Bandwidth Product IT 1 BOO - kHz
Forward·Blas Second-Break-
'Sib 39 3 - A
down Collector Current h ~ 1 $)
Thermal ReSistance ROJC - 1.5 °C/W

(Junctlon-to-Case)
a Pulsed: Pulse duration'" 300 jJ.S. duty factor" 2%_
COLLECTOR-TO-EMITTER VOLTAGE {VCE'-4V

CASE TEMPERATURE tTC'-2S· C
f ~
~
.,:," C
60 ~\1.c\· ~
;
~
~I--l-..-:~
~.~..fj,:
~
40~ '\.
3 ° ~
10 W ~ ~ ~ ~ ro ~
i
~
z
0.<>
, . .. 0.1
, . .. 1.0
, . .. 10
COLLECTOR-TO-EMITTER YOLTAGE(VCE1-V COLLECTQft CURRENT (Ic)-A
Fig. 6 - Tvpical output characteristics. Fig. 7 - Tvpical dc beta characteristics.
~ ___________________________________________________________________ 307
POWERTRANSISTORS ____________ ~ __________________________________________
80181,80182,80183
Features:
Hometaxial-Base. High Power Silicon • Maximum safe-area-of-operation curves
N-P-N Transistors • Low saturation voltages

• High dissipation ratings
• Thermal-cycling rating curves
Rugged, Broadly Applicable Devices For Commercial Use
RCA-BDlS1. 80182 and 80183 are silicon n-p-n transistors
intended for a wide variety of high-power applications. The
Applications: TERMINAL DESIGNATIONS
hometaxial-base construction of these devices renders them • Series and shunt regulators
highly resistant to second breakdown over a wide range of • High-fidelitvampfifiers
operating conditions.
These transistors are supplied in a JEDEC TO-3 hermetic • Solenoid drivers
steel package.
BD1Bl BD182 BDI83

MAXIMUM RATINGS. Absolute-Maximum Values ..
COLLECTOR-TO-BASE VOLTAGE VCBO 55 70 85 V
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE,
55 70 85 V JEDECTO·3
With external base-ta-emitter resistance (RaEI '" 10012 VCER(sus)
With base open VCEO(sus) 45 60 80 V (See dimensional oulllne "AU.)
EMITTER-lO-BASE VOL TAGE ........ . VEBO V
CONTINUOUS COLLECTOR CURRENT __ IC 15 15· 15 A
CONTINUOUS BASE CURRENT IB 7 A
TRANSISTOR DISSIPATION, PT
At case temperatures up to 25°C 117 117 117 w
At case temperatures above 250 C . - - - See Fig_ 2 ____
TEMPERATURE RANGE,
Storage and Operating (Junction) ~ -65 to +200 ---... °c
PIN TEMPERATURE (During Soldering):
At distances ~ 1/32 in. (0.8 mm) from seatin.9 plane for 10 S mal(. . . - - - 235 - - - . °c
•
}
c(
I
o
H
... 104 6 II 10'
...
2
It:
HUMBER OF THERMAL CYCLES
It: Fig. 2 - Thermal cycling rating chart for

:>
o all types.
It:
...oo
...
..J
-'
o
o
I
10 8ASE-TO-EIIIITlEfI VOLTAGEIV8E I-V
COLLECTOR-TO-EMITTER VOLTAGE CVCEI-V
Fig. 1 - Maximum operating areas for all types. for all types.
308 _____________________________________________________________________
80181,80182,80183
ELECTRICAL CHARACTERISTICS, At Case Temperature (T c! ~ 25°C Unless Otherwise Specified
CUR-
CHARACTER ISTIC SYMBOL VOLTAGE RENT UNITS
Vdc Adc B0181 B0182 B0183
V CB V CE V EB V BE IC IB MIN_ MAX_ MIN_ MAX. MIN. MAX.
Collector-Cutoff Current: 45 0 - 2 - - - -
With emitter open and I CBO 60 0 - - - 5 - -
TC" 200°C 80 0 - - - - - 5
With base-emitter junction 45 -1.5 1 - - - - rnA
reverse-biased I CEX 60 -1.5 - - - 1 - -
80 -1.5 - - - - - 1
Emitter-Cutoff Current lEBO 7 - 5 - 5 - 5 rnA
Collector-ta-Emitter Sustaining Voltage:

With base open VCEO(sus) 0.2a 0 45 - 60 - 80 -
With external base-to-emitter resistance

(R BE )=100 !1 0.2a 55 - 70 - 85 - V
VCER(sus)
4 4a - - 20 70 - -
DC Forward Current Transfer Ratio hFE
4 3a 20 70 - - 20 70
4 3a - 1.5 - - - 1.5
Base-to-Emitter Voltage V BE V
4 4a - - - 1.5 - -
Collector-ta-Emitter Saturation 4a O.4a - - - 1 - -
VCE(sat)
Voltage 3a 0.3a - 1 - - - 1 V
Magnitude of Common-Emitter, Small-
Slgna\, Short-Circuit, Forward Current
ihfei
4 1 2 - 2 - 2 -
Transfer Ratio (f " 0.4 MHz)
Gain-Bandwidth Product fT 1 800 - 800 - 800 - kHz
Common-Emitter, Short-Circuit, Small-

Signal, Forward Current Transfer f hfe 4 0.3 15 - 15 - 15 - kHz
Ratio Cutoff Frequency
Forward-Bins Second Breakdown Collector

IS/b 30 3.95 - 3.95 - 3.95 - A
Current (t;;;' 1 s)
Thermal Resistance (Junction-to-Case) - 1.5 - 1.5 - 1.5 ° C/W

ROJC
a Pulsed: Pulse duration = 300 /-LS, duty factot = 1.8%.
COLLECTOR-lO-EMITTER VOLTAGE (VCE)'41/

CASE TEMPERATURE (TC)·25·C
"
-fll1i~ "l'--
•I '0
3' 50
• 'DO
200
A C
BASE-TO-EMITTER VOLTAGEIVee:\-V -IH07RI

102030405070
CCLLEClOR-TO-EMITTER VOLTAGE !Ver)-v
.. , 01 1.0
.. , '0
gZCS /nCS-!230IR1
Fig. 4 - Typical input characteristics Fig. 5 - Typical output characteristics Fig. 6 - Typical dc-beta characteristics
for 80182. for 80182. for 80182.
_____________________________________________________________________ 309
80181,80182,80183
COLlECTOR- TO;EMITTER VOLTAGE {VCE'." \I
BASE-TO-EMITTER VOLTAGE {VSE I-V

. ,. 0-' LO
COLLECtOR CURRENT (lei-A
. ,. '0
I12:CS-19441
Fig. 7 - Typical input characteristics for Fig. 8 - Typical output characteristics for Fig. 9 - Typical dc-beta characteristics for
80181 and 80183. 80181 and 80183. 80181 and 8D183.
. ,. 0,
COLLECTOA CURRENT ItCI-A
, Z 468
10
2 468
100
2 468
IK
2 468
10K
2 468
1001< .'.
EXTERNAL eASE-TO-EMITTER RESISTANCE IReEI-A SASE-TO-EMITTER VOLTAGE (vStl-v
Fig. 10 - Typical gain·bandwidth product Fig. 11 - Sustaining voltage vs. base·to·emitter Fig. 12 - Minimum reverse·bias second·breakdown
for all types. resistance for all types. characteristics for all types.
310 ________________________________________________________________________
POWER TRANSISTORS
80201, 80202, 80203, B0204

Features:
Epitaxial-Base, Silicon - Low saturation voltages
_ VERSA WA TT package
N-P-N and P-N-P _ Complementary n-p-n and
VERSAWATT Transistors p-n-p types

_ Maximum safe-area-of-
General-Purpose Medium-Power Types for operation curves
The RCA-B0201 and B0203 n-p-n and shunt regulators. and driver and output
transistors and their complementary p-n-p stages of high-fidelity amplifier. TERMINAL DESIGNATIONS
types. B0202 and B0204 respectively. are
epitaxial-base transistors intended for a
wide variety of medium-power switching All types utilize the JEOEC TO-220AB
and amplifier applications. such as series B
{RCA VERSAWATT} plastic package.
C
(FLANGEI
o
BOTTOM VIEW
e c
92CS~27519
JEOEC TO-220AB
N-P-N B0201 B0203
P-N-P B0202- B0204-
VCBO······························ 60 60 V
VCEO(SUS) ........................ . 45 60 V
VEBO ............................. . _____ 5 V
IC·································· A
lB······················ ........... . 3 A
PT
_ _ _ _ _ 60
TC";25°C ..........•.............. W
TC>25°C ........................ . Derate linearly 0.48 w/oC
Tst9' TJ ...•........................ _ _ _ _ -65 to 150 °c
TL
At distances?: 1/8 in. (3.17 mm) from
case for 10 S max. 235 °c f 10
-For p-n-p devices, voltage and current values are negative.
;r
-60
~
~ 50
~ ()-:s.u:....o
°40 ~~
0.,.,
~ 30 <~'"
~
~20
2
"
:! 10
'"
~
25 50
CASE
75 '00 '25
TEMPERATURE (TC)--C
150 "5 ZOO
92.CS~33.51
Fig. 2 - Derating curve for aI/types.
\ COLLEtTOH-TO-EhlITTER VOLTAGE (VCEl'4V

II CASE TEMPERATURE tTel-25-C r---
.. (; fO. .. 68,
6 8 10 2 4 6 8100 2 6 81000 COLL.ECTOR CURRENT (lcl-A

COLLECTOR-TO- EMITTER VOLTAGE(VCE}~V
92CM-334&S
Fig. 3 - Typical gain-bandwidth product vs.
Fig. 1- Maximum operating areas for all types (TC=2S0C). col/ector current for aI/ types.
__________________ ~ ______________________________________ ~ ____________ 311

80201, 80202, 80203, 80204

ELECTRICAL CHARACTERISTICS. at Case Temperature (TC)=25°C
TEST CONDITIONS· LIMITS

CHARAC- VOLTAGE CURRENT 80201 80203
UNITS
TERISTIC Vde A de 8D20~ 180204·
VC8 VCE V8E IC 18 Min. Max. Min. Max.
ICBO 40 1 1
TJ=150°C 40 1 1
'CEO 30 - 1 - 1 rnA
'EBO -5 - 5 - 5
VCEO(SUS)a 0.2b 45 - 60 - V
2 1b 30 - 30 -
hFE 2 2b - - 30 -
2 3b .3lL
VBE 2 3b - 1.5 - 1.5
V
VCE(sat) 3D 0.3 - 1 - 1
'SIb 20 3 0.5 - 0.5 - s
,hie'
(1=1 kHz)
3 0.3 3 - 3 -
hie
(1=1 kHz)
3 0.3 25 - 25 -
ROJC - 2.08 - 2.08
°C/W
ROJA - 70 - 70
aCAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer.
bPulsed: pulse duration = 300 ps, duty factor =0.018.
312 _____________________________________________________________________
POWER TRANSISTORS
B0239, B0239A, B0239B, B0239C, B0240, B0240A, B0240B, B0240C
Epitaxial-Base Silicon N-P-N and P-N-P

VERSA WATT Transistors Features:
• JO W at 25°C case temperature
For Power~Amplifier and HighSpeed~Switching Applications
• 4-A rated collector current
These RCA devices are epitaxial-base silicon n-p-n Jnd BD240·series p-n·p power transistors are complements of • Min. fT of 3 MHz at 10 V. 200 rnA
p-n-p transistors; they differ only In their voltage ratings. the n-p·n devices In the 80239 series.
These transistors are intended for a wide variety of switching
and amplifier applications such as series and shunt regulators, All these transistors are supplied In the JEDEC TQ·220AB
and driver and output stages of high·fidelity amplifiers. The VEASAWATT package,
C
(FLANGE)

B0239 BD239A BD239B BD239C
80240+ BD240A· B024Os- BD24OC· 92CS-27'519
COLLECTOR·TQ-EMITTER VOLTAGE
With external base·to-emitter BOTTOM VIEW
resistance (RSE) " 100 n . VCER 55 70 90 115 V JEDEC TO-220 AB
With base open. V CEO 45 60 BO 100 V (See dimensional outline "5".)
EMITTER~TO~6ASE VOLTAGE VE60 5 5 V
CONTINUOUS COLLECTOR CURRENT IC A
CONTINUOUS BASE CURRENT 16 A
At ca~ temperatures up to 25°C 30 30 30 30 W
At ambient temperatures up to 2S O C . 2 W
At case temperatures above 25°C .. Derate linearly 10 150 C
TEMPERATURE RANGE,
Storage & Operating (Junction). -6510150 °c
LEAD TEMPERATURE (During Soldering):
At distance liB in. (3.17 mm) from
case for 10 s max. 235 °c
• For p_n·p device$, VOltage and curr(lnt va lUlls ~re negative.
Fig. 1 - Thermal-cvcling ratings for all tvpes_
COLLECTO"-TO-EMITl[A VOLTAGE (VeE I-V COLLECTOR-TO-EMITTER I/OLTAGE II/CEI-I/
Fig. 2 - Maximum safe operating areas for Fig. 3 - Maximum safe operating areas for
BD239·series types. BD240-series types.
--------________________________________________________________________ 313
POWER TRANSISTORS
B0239, B0239A, B0239B, B0239C, B0240, BD240A, B0240B, BD240C

ELECTRICAL CHARACTERISTICS at Case Temperature ITcI =2SOC

VOLTAGE CURRENT BD239 BD239A BD239B BD239C
Vdc Adc BD24O" BD24OA" BD24OB" BD~4OC"
V CE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Collector Cutoff Current: -30 0 -0.3 -0.3
ICEO
With base open -60 0 -0.3 -. 0.3
mA
With base-ta-emitter -45 0 -- 0.2
junction short-circuited - 60 0 0.2
ICES -80 0 -0.2
-100 0 -0.2
Emitter Cutoff Current IEaO 0 -1 -1 -1 -1 mA
Breakdown Voltage: VaRICEOI ·0.03" -45 -60 -80 -100 V
With base open
DC Forward-Current -4 -0.2 8 40 40 40 40
Transfer Ratio hFE -4 _1· 15 15 15 15
Base-la-Emitter Voltage V BE -4 _1· -·1.3 -1.3 -1.3 -1.3 V
COllector-la-Emitter _ 1·
VCElsatl -0.2 -0.7 -.. 0.7 -0.7 -0.7 V
Saturation Voltage
Common·Emitter
Small·Signal Short·
h,. -10 0.2 20 20 20 20
CirCUit Forward-
I' = 1 kHzl
Magnitude of Common
Emitter Small-Signal
Ih'·1
-10 0.2 3
Short-CirCUlI Forward-
Current Transfer RatiO
If = 1 MHz!
Thermal ReSistance-
Junction-la-Case RO JC 4.17 4.17 4.17 4.17
°C/W
Junction-la-Ambient RO JA 62.5 62.5 62.5 62.5
• For p-n-p deVices, voltage end current values are negative.

apulsed: Pulse duration == 300 J.IS, duty factor ~ 2%.
COLLECTOR CURRENT "C)-A COLLECTOR CURRENT IIC}-A
Fig. 4 - Typical dc beta characteristics for Fig. 5 - Typical dc beta characteristics for
BD239-series types. BD240..series types.
314 ________________________________________________________________________
POWER TRANSISTORS
B0241, B0241A, B0241B, B0241C, B0242, B0242A, B0242B, B0242C
. Epitaxial-Base Silicon N-P-N and P-N-P

VERSAWATT Transistors Features:
For Power-Amplifier and High-Speed-Switching Applications
• 40 W at 25° C case temperature
These RCA devices are epitaxial-base B0242-series p-n-p power transistors • 5-A rated collector current
silicon n-p-n and p-n-p transistors; are complements of the n-p-n devices • Min. fT of 3 MHz at 10 V, 500 mA
they differ only in their voltage ratings. in the B0241 series.
These transistors are intended for a TERMINAL DESIGNATIONS
wide variety of switching and amplifier All these transistors are supplied in the
JEOECTO-220AB VERSAWATT pack-
applications such as series and shunt
regulators, and driver and output age. C
(FLANGE)
stages of high-fidelity amplifiers. The

80241 BD241A 802418 BD241C
RCS-27"9
80242· BD242A+ 802428· BD242C+
COLLECTOR-TO-EMITTER VOLTAGE, BOTTOM VIEW
With external base-ta-emitter JEDEC TO·220 AB
resistance (RBE) '" 100 n . VeER 55 70 90 115 V
With base open . V CEO 45 60 80 100 V
EMITTER·TO-BASE VOLTAGE _- VEBO 5 5 V (See dimensional outline "S".)
CONTINUOUS COLLECTOR CURRENT 'C 5 A
CONTINUOUS BASE CURRENT - 'B A
TRANSISTOR DISSIPATION PT
At case temperatures up to 25°C . 40 40 40 40 W
At ambient temperatures up to 25 0 C . 2 w
At case temperatures above 25D C . Derate l.nearly to 150°C
TEMPERATURE RANGE,
Storage & Operating (Junction). -65 to 150 °c
LEAD TEMPERATURE (During Soldering):
At distance 1/8 in. (3.17 mm) from
case for 10 s max, 235 °c
• Fgr p n_p devices. \/ollagoJ and current valueo 8'. negat;"e
NUIiIBER or THERMAL CYCLES
Fig. 1 - Thermal·cycling ratings for all types.
'0 ·100
COLlECTOR·TO-EMITTEA VOLTAGE IVCEI- V 9~S.22"l9 COLLECTOR -TO -[M'TTER VOLTAGE (Va:l- v
BD241·series types. BD242·series types.
________________________________________________________________________ 315
B0241 , B0241A, B0241B, B0241C, B0242, B0242A, B0242B, B0242C

ELECTR ICAl CHARACTERISTICS at Case Temperature (TcJ ~ 2SOC

VOLTAGE CURRENT B0241 B0241A B0241B B0241C
Vdc Adc B0242· B0242A· B0242B· B0242C·
V CE V BE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Collector Cutoff Current: 30 0 - 0.3 - 0.3 - - - -
With base open ICED 60 0 - - - - - 0.3 - 0.3
rnA
With base· to-emitter 45 0 - 0.2 - - - - - -
j unction short-circuited 60 0 - - - 0.2 - - - -
ICES 80 0 - - - - - 0.2 - -
100 0 - - - - - - - 0.2
Emitter Cutoff Current lEBO -5 0 - 1 - 1 - 1 - 1 rnA
Breakdown Voltage: VBR(CEDI 0.03a 0 45 - 60 - 80 - 100 - V
With base open
DC Forward-Current 4 la 25 - 25 - 25 - 25 -
hFE
Transfer Ratio 4 3a 10 - 10 - 10 - 10 -
Base-to-Emitter Voltage V BE 4 3" - 1.8 - 1.8 - 1.8 - 1.8 V
Collector-to-E mitter
VCE(satl 3" 0.6 - 1.2 - 1.2 - 1.2 - 1.2 V
Saturation Voltage
Common-Emitter
Small-Signal Short-
hIe 10 0.5 20 - 20 - 20 - 20 -
Circuit Forward-
(I = 1 kHzl
Magnitude of Common
EmiHer Smail-SIgnal
Short-CircuIt Forward- Ihlel 10 0.5 3 - 3 - 3 - 3 -
(I = 1 MHzl
Thermal Resistance:
Junctlon-lo-Case RO JC - 3.125 - 3.125 - 3.125 - 3.125
°C/W
Junction-to-Amb ient ROJA - 62.5 - 62.5 - 62.5 - 62.5
BPulsed: Pulse duration:::; 300 J.lS, duty factor 00 2Q,o. • For p·n·p devices, voltage and current values are negative.
COLL[CTOfiI-TO-[MITT[R YOLTAGE IYcel--4V

E"'oo
S
~ 200
CAS~ TEilT~! ITCI~12~-t
....,...... I,;:cr--
~
g 100
..
~ -40'"(:
~
r .:-...
~ "- -0~
. ...
'~I==+=I=H'=I==+=t=1H'=I==+=t:'\+tl
I ,.,.. i'
0.1
COLLECTOR CURRENT (IC!-A
I
. ..,. g
, . .. -01
, . .. . . .-,..
-I
COLlECTOfil ClJIIIIM:NT Ilcl-A
BD247·series types. BD242-series types.
318 ___________________________________________________________________
B0243, B0243A, B0243B, B0243C, B0244, B0244A, B0244B, B0244C
Epitaxial-Base Silicon N-P-N and P-N-P

Features:
VERSAWATT Transistors • 65 W at 25°C case temperature
For Power-Amplifier and High-Speed-Switching Applications • 7-A rated collector current
• Min. IT of 3 MHz at 10 V, 500 rnA
These RCA devices are epitaxial-base series p-n-p power tra nsistors are
silicon n-p-n and p-n-p transistors; complements of the n-p-n devices in
they differ only in their voltage ratings. the B0243 series. TERMINAL DESIGNATIONS
These transistors are intended for a
wide variety of switching and amplifier All these transistors are supplied in the
applications such as series and shunt JEOEC TO-220AB VERSAWATT pack- c
(fLANGE)
regulators, and driver and output stages age.
of high fidelity amplifiers. The B0244-
MAXIMUM RATINGS. Abs%te-Maximum ViJlues

80243 BD243A 802438 BD243C 9ZCS-Z1~19
80244· BD244A· 802440· BD244C+
COLLECTOR·lO·EMITTER VOLT AGE BOTTOM VIEW
WIth external base-ta-emiller
JEDEC TO·220 AB
resistance (R BE ) = 100 ~l VeER 55 70 90 115 V
With base open VCEO 45 60 80 100 V
EMITTER·TO·BASE VOLTAGE VEBO 5 5 V
CONTINUOUS COLLECTOR CURRENT
At cas.e temperatures up to 25°C
Ie
IS
Pr
6.5
66
1
6.' 6.'
1
6.' A
A .
66 65 65 W
At ambient temperatures up to 25°C 2 2 2 2 VI
At case temperatures abo . . e 25°C O"'Jlt' Ilnea,ly to 150~C ~ 10
TEMPERATURE RANGE
Storage & Operating (Junction) -65 to 150 °c
LEAD TEMPERATURE (During Solderlngi
At distance 1/8 m. (3.17 mm) from
case for 10 s max 235 °c
• For p n p devIces. ~Olhll'" and curren I values /I'e negall~e
,,' NU"'B[A or
,,'
H.[A~l>,L CYCLES
,,'
Fig. 1 - Thermal·cycling ratings for all types.
«
.'.
u
!
80.1
• • 10 • •100 • •1000 -1
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- V COLLECTOR -TO -EMITTER VOLTAGE (VCE)- v
92C5-22451
BD243-series types. BD244·series types.
________________________________________________________________________ 317
POWERTRANSISTORS ____________________________________________________________
B0243, B0243A, B0243B, B0243C, B0244, B0244A, B0244B, B0244C

ELECTRICAL CHARACTERISTICS at Case Temperature (TCl = 25"C

VOLTAGE CURRENT BD243 BD243A BD243B BD243C
CHARACTERISTIC SYMBOL BD244· BD244A+ BD244B· BD244C· UNITS
Vd. Ad.
VCE V BE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
ICEO
30 0 - 0.7 - 0.7 - - - -
With base open 60 0 - - - - - 0.7 - 0.7
rnA
With base-ta-emitter 45. 0 - 0.4 - - - - - -
j unction short-circuited 60 0 - - - 0.4 - - - -
ICES 80 0 - - - - - 0.4 - -
100 0 - - - - - - - 0.4
Emitter Cutoff Current lEBO -5 0 - 1 - 1 - 1 - 1 rnA
Collector-te-Emitter
Breakdown Voltage: VaRICEOI 0.03" 0 45 - 60 - 80 - 100 - V
With base open
DC Forward-Current
hFE
4 0.3" 30 - 30 - 30 - 30 -
Transfer Ratio 4 3" 15 - 15 - 15 - 15 -
Base-to-Emitter Voltage VaE 4 ff' - 2 - 2 - 2 - 2 V
Collector-te-Emitter
Saturation Voltage
VCElsa,1 ff' 1 - 1.5 - 1.5 - 1.5 - 1.5 V
Common·Emitter
Small-Signal Short-
Circuit Forward- hi. 10 0.5 20 - 20 - 20 - 20 -
If = 1 kHzl
Magnitude of Common
Emitter Small-Signal
Short-Circuit Forward- ih'·i
10 0.5 J - J - J - J -
If = 1 MHzl
Thermal Resistance:
Junction-fa-Case ROJC - 1.92 - 1.92 - 1.92 - 1.92
°CIW
Junction-Ie-Ambient ROJA - 62.5 - 62.5 - 62.5 - 62.5
aPu.lsed: Puls~ duration = 300 ,/.IS, duty factor =' 2'%. • For p·n·p devices, voltage and current values are negative.
COlLECTOR-TO-EMlTTER VOLTAGE !VCE"

t"'OO " E'OO
COI..LECTOft-TO-UIITTER VOLTAGE IYCEl- - "'V
~ C..JE ToLER~TU£ tTCJI2~.C •i CAS!E Tul'ER~T!l tTCI~ln-c

"00 200
m ~:-- ~ I;;:c
=
~ 80
100
-"'O-c
5
•
100
00
OO'e
60
,,- ; 60
i "- I.-- 10-
:!
.0
~
'~,,~
"'0
"-
r--.."
I 20
r\ I• '0
g '0
8
0,0'
. .. . ..
0,1 I
COLLECTOR: CURRENT IIC'-A
, . .. g '0
, . .. -0.1
, . .. , . ..
-I
COLLECTOR CUftRENT tic I-A
BD243-series types. BD244-series types.
318 ________________________________~------~---------------------------
POWER TRANSISTORS
80277
Features:
7-A, 70-W, Epitaxial-Base, Silicon P-N-P
VERSA WATT Transisfor • Maxlmum-safe-area-of -operation
For Applications in Series and Shunt Regulators curve
Type 80277 is an epitaxial-base silicon The 80277 is useful in series regulators • Low saturation voltage
p-n-p transistor supplied in the JEOEC and shunt regulators because of its low • VERSAWATT package
TO-220A8 straight-lead VERSAWATT saturation voltage and high power-dis- • High power-dissipation capability
package. It is also available in the TO- sipation capability. It is also useful as a
220AA package (leads formed to fit a replacement for germanium p-n-p tran-
TO-66 socket) to order this version, sistors in many applications.
specify formed lead No. 6201. TERMINAL DESIGNATIONS
COLLECTOR·TO·BASE VOLTAGE: B
With emitter open. . . . . . . . VCBO -45 V
COLLECTOR·TO·EMITTER VOLTAGE: C
With base open. . . . . . -45 (FLANGE)
VCEO V
EMITTER·TO·BASE VOLTAGE:
With collector open . . . .
COLLECTOR CURRENT (Continuous)
BASE CURRENT (Continuous). .
VEBO
IC
IB
-4
-7
-3
V
A
A
BOTTOM VIEW
-,-
E
.2C,-27".
At case temperatures up to 25°C . 70 w JEDEC TO-220AB
At case temperatures above 2S0 C • Derate linearly at 0.56 .W/DC (See dimensional ouliine "S".)
TEMPERATURE RANGE:
Storage & Operating (Junction) . . . . . . . . -65 to 150
LEAD TEMPERATURE lOuring Soldering):
At distance> 1/8 in. (3.17 mm) from case for 10 5 max. 235
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCl = 2fiOC unless specified otherwise

BOTTOM VIEW 92C.·27520
TEST CONDITIONS JEDEC TO-220AA

VOLTAGE CURRENT (See dimensional. outline "R".)
LIMITS
V de A de
100, "T[MAlCl.70 W
:tI1"A
VCE VCB VEB IC IB IE MIN. MAX.
-
, J,£LS. ~
With emitter open -45 -0.1
ICBO ~
With emitter open and TC = ,sooe -40 -2.0 rnA
~'~
r--_:'f1 ~\ r:,&.
With base open
Emitter Cutoff Current:
ICEO -30 -1.0
10
.'t-f " .
"~
With collector open lEBO -4 - -1.0 rnA
. . ..1 ~ ~
I\~
Collector-ta-Emitter Breakdown Voltage:
With base open V(BRICEO -0.1" -45 V
2f-i
'I
\ 1\ "10;'0.";:-
.,.
-1.75·
-;, \~ \. 1~\e'K,\C
Base-ta-Emitter Voltage VBE -2 1.2 V
DC Forward-Current
Transfer Ratio -2 -1.75" 30 150
I
2 .. 68 ,
hFE I.' I.' 10'
Collector-ta-Emitter N)JM8ER OF' THERMAL CYCLES
Saturation Voltage Vce{sat) -1.75" -0.1 -0.5 V Fig. 1 - Thermal·cycling ratings.

Gain-Bandwidth Product -4 -0.5 10 MHz
Thermal Resistance:
Junction-ta-Case ROJC 1.7B
°C/W
Junction-ta-Ambient ROJA 70
• Pulsed: Pulse duration = 300 liS, duty factor'" 2%.
.-.
I
COLLECT~-TO-EMITTER VOLTAGE 1VeE'. -4V
~-5
."
;J
ffi-4 .!..-..!l~c.. S'
.
~ -,
~ Z
t:Y I\j' ~
I
~-2 It'
8 !
I:!
. .. . ...
11
- 0 -0.5 -1 -us -2
-0.1
" , -I -10
BASE-TO-ENtTrER VOLTAGE tVeE I - V92CS_IIIOI6
COLLECTOR-TO-EMtTTER VOl.TAGE (VCEI-V C01..LECTOR CURRENT tICI-A
Fig. 2 - Maximum operating area. Fig. 3 - Typical transfer characteristics. Fig. 4 - Typical dc beta characteristics.
_____________________________________________________________________ 319
B0278, B0278A
High-Current Silicon N-P-N Features:

• Low saturation voltage:
VERSA WATT Transistors VCE(sat) = 1 V max_ at IC =4 A
• VERSAWATT package
For Medium-Power Linear and Switching Service
• Maximum-safe-area-of-operation curve
in Consumer, Automotive, and Industrial Applications
• Thermal-cycling rating curve
The RCA-B0278 and B0278A are home- applications such as series regulators, shunt
taxial-base silicon n-p-n transistors supplied regulators, solenoid drivers, motor-speed con-
in the JEOEC TO-220AB straight-lead VER- trols, inverters, output stages for high-fidel-
SAWATT package_ ity amplifiers, and power-supply and verti-
These transistors are intended for a wide cal-deflection circuits for monochrome and
variety of medium-power switching and linear color TV.
e
c
BD278 BD27BA (FLANGE)
c
COLLECTOR-TO-BASE VOLTAGE V CBO 55 55 V
W.ith external base-la-emitter resistance (ABE) =:: lOOn VCER('u,) 55 55 V BOTTOM VIEW
With base open VCEO('u,) 45 45 V
9ZCS-Z7519
EMITTER-TO-BASE VOLTAGE V EBO V
COLLECTOR CURRENT (Continuou,) 10 JEOEC TQ·220AB
IC 10 A
BASE CUR RENT IB 4 4 A
TRANSISTOR DISSIPATION: PT (See dimensional outline "S",)
A t case temperatures up to 2SoC 75 75 W
At ambient temperatures up to 25°C 1.B 1.B W
At case temperatures above 2SoC. derate linearly 0.6 - - - W/oC
At ambient temperatures above 25°C. derate linearly - - - - 0.0144--- W,oC
TEMPERATURE RANGE:
Storage & Operating (Junction) - - --65 to 1 5 0 - - °c
LEAD TEMPERATURE (Ouring Soldering):
At distance ~ 1/8 in. 13.17 mm) from case for 10 s max. - - - 235 °c
•
. IDa.
-I-',u-~
P, IMAX.l·1~W-
COLLECfCft-TO-EMITTER VOlTAGE: ('VCE)-. V
I
~
~
•
, --~~" ~
~~"'''-:.,
..".
~
1
~
iIOI.t===~===1==ts~~~~~0tt+=t~
i
o
;;
10
•
-~
=-"'
, r:;:~.
1\ ~~
".oS{, a ,r--+_-__r~__+
" ~ .. r--+_-__r~~__r~
~
~ 4r-~ '" ~~"

'S.rQ
~
~
f-£
~<,
, ~
. N~O
\ I\J\.__
,1
1000
,01-- °
, . ~, , 1\ r\K1\~
, .,,
10,000
"'-

100,000 0.01
. ,. 0.1
I
00
COLLECTOR-fO-EMITTER \lOLTAGE I\leEI-\I
92CS-22303
Fig. 1 - Thermal-cycling ratings. Fig.2 - Typical dc beta characteristics. Fig.3 - Maximum safe operating area.
COLLECTOR-TO-EMITTER VOLTAGE 1 VCE~. 4'1

CASE TEMPERATURE ITcl-25-C
i Z.4
~ Zr-__r-+_~+__~r___r__r~--+__+_+~
I ,., V
~
'.6
; 0.'
f~ 0.4
, ,. 0.01 .. '" 1 0 . 1 .. 6 I I
BASE-TO-EMITTER VOLTAGE NBE1-V COLLECTOR CURR£NT (Ic~-A BASE-fO-EMITTER VOLTAGE: iVSE1-V
Fig.4 - Typical transfer characteristics. Fig.5 -.: Typical gain-bandwidth product. Fig.6 - Typical input characteristics.
320 _____________________________________________________________________
B0278, B0278A
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 2fi"C unless otherwise specified

BD278 BD278A UNITS
SYMBOL V de A de
VCE VEB IC IB MIN. MAX. MIN. MAX.
55 1.5 - 2 - 2
ICEX
rnA
TC=150 oC 50 1.5 - 10 - 10
ICEO
30 0 - 2 - 2
lEBO 5 - 5 - 5 rnA
VCER(sus)
0.2a 55 - 55 -
RBE = lOOn
v
VCEO(sus) 0.2 a 0 45 - 45 -
4 4a 15 75 15 75
hFE
3 28 - - 30 -
VBE 4 4a 1.8 - 1.8 V
VCE(sat) 4a 0.4 - 1 - 1 V
hfe
4 0.5 15 - 15 -
(f= 1 kHz)
hfe 4 0.5 8 28 8 28
(1=0.1 MHz)
ISlb - -
40 1.87 1.87 A
(t=0.5s)
ReJC - 1.67 - 1.67

°C/W
ReJA - 70 - 70
a Pulsed, pulse duration = 300115, duty factor = 0.018
II
.0
BASE·rn·EIITTER VOLTAGE (VSE)-V
Fig.7 - Typical output characteristics. Fig.S - Reverse-bias second-breakdown

characteristics.
____ ~ _______________________________________________________________ 321

80311,80312,80313,80314
Features:
Silicon N-P-N and P-N-P Epitaxial-Base • High dissipation capability
High-Power Transistors • Maximum safe-area-of-operation curves
• Hermetically sealed JEDEC TO-204MA
package
Rugged, Broadly Applicable Devices • High gain at high current
For Industrial and Commercial Use • Thermal-cycling rating curve
Applications:
The RCA-80311 and 80313 types and dissipation capability of 150 watts at • Series and shunt regulators
their p-n-p complements. 80312 and case temperature up to 25 'C and are sup- • High-fidelity amplifiers
80314. respectively. are epitaxial-base plied In the JEOEC TO-204MA steel • Power-switching circuits
silicon transistors featuring high gain an.d hermetic package. • Solenoid drivers
high current. All these devices have a
80311 80313 n·p·n

-80312 - 80314 p-n.p
VCBO ........•...........•.............•..... 60 80 V
VCEO(SUS) ................................... . 60 80 V
VEBO ....................................... . 7 7 V
Ie····· .. ··· .. ·· .. ·· .. ···· .... · .. ··········· .. 10 10 A JEDEe TO·204MA
lB························ ................... . 4 4 A
Pr (Se. dimentional oullin. "A".)
AtTC<25'C ............................... . 150 150 W
At TC > 25 'c .................... Derate linearly _ _ _ 0.86 _ _ __ w/'e
Tstg.TJ ...................................... . __ - 65 to 200 _ __ 'c
TL
At distance;;' 1/32 in. (0.8 mm) from seating
plane for 10 S max. . ....................... . _ _ _ 235 'C
- For p-n-p devices. voltage and current values are negative.
SO 75 100 125 150 175 ZOO

CASE TEMPERATURE (7C)--C
Fig. 2· Derating curve for aI/ types.
_ 400 COLLECTOR -TO EMITTER VOLTAGE (VeE) • 4 V
! , L50-C
.
0 TC
~
r-- ~ t----.r--.
~ , r-...
100
, I--.. K."'-.,
.
55-C
~
~ t--.. ~
~ '~ ~
!~ , 't'-,~
g
1
QI I ~
COLLECTOR CURRENT IIC)-A 9ZCS- )3038
Fig. 3· Typical de beta characteristics for

Fig. 1 . Maximum safe operating areas for aI/ types. 80312 and 80314.
322---------------------------------------------------------------------
80311,80312,80313,80314
ELECTRICAL CHARACTERISTICS. at case temperature (Tc)=25'e

VOLTAGE CURRENT B0311 B0313
Vdc Adc - B0312 -B0314
leBO
VCB=60V - 1.0 - - rnA
VCB=80V - - - 1.0
lEBO -7 0 - 1:0 - 1.0 rnA
VCEO(sus)b 0.2 0 60 - 80 V
4 4a 25
hFE 4 5a 25 - - -
4 10a 5 - 5 -
VBEa 4 5 - 1.5 - 1.5 V
VBE(sat)a 5 0.5 - 1.8 - 1.8 V
5 0.5 1.0 1.0
VCE(sat)a V
- - - - - -
Ihfel
f-1 MHz
10 0.5 4 - 4 -
ROJC - 1.17 - 1.17 'CIW
=
apulsed; pulse duration 2001's, duty factor 1.5%. =
bCAUTION: Sustaining voltages VCEO(SUS) and VCER(SUS) MUST NOT be measured on a curve
tracer.
• For p·n·p devices, voltage and current values are negative.
~ 10 B COLLECTOR-TO EMITTER VOLTAGE (VCE)· 41/ r---I-- 2~.~ Ui~.. ;.J

" ~
II '.'
~
e>
"
~ V
1.5
~11.2
~~
;:\1
~'"
V ~i
-
~~ I
j"1II 1
t-- r- VBEII?1l @, Ic~IB· 10 L JL ~?>8 /--- VBIEtutl ~C~IO ~
i~ VeE@lVCE-4VV 1-
ow
V
ill
OW
I~ I~O.6 liSE @VCE· 4 V
~o
~>o.!! L ~~O.4 1 ", I l/
~I I
Fig. 4 . Typical de beta characteristics for

80311 and 80313.
..
92CS-"03.
ro
~
8
0.1
,
veE,L"",J,~ V
4 .. I
,
COLL.ECTOR CURRENT tIc)-A
Fig. 5 - Typical saturation-voltage character-

4
!lZCS-llO"
.. 10.
~
8 0.'
~
..JE'"' <;>1 IeJ..
, . .. .V . • •
10
I
- V
COLLECTOft CUItMHT (Ic)-A t:lCS-UOH
Fig. 6· Typical saturation-voltage character-

~
istics for 8D312 and 8D314. istics for 80311 and 80313.
__________________________________________________________________ 323
POWERTRANSISTORS ______________________________________________ ~----------
80500, 80501 Series
Silicon Transistors for 40-Watt Full-Complementary- Symmetry

Audio Amplifiers
The B0500-Series and B0501-Series coupled to an 8-ohm speaker. The
types are p-n-p and n-p-n epitaxial- B0500A and B0501A are intended for
base silicon transistors, respectively, similar 40-watt audio amplifiers ex-
especially suitable for audio-output cept for a 4-ohm speaker and a split TERMINAL DESIGNATIONS
applications. The 40-watt amplifier 46-volt power supply. The B0500 and
shown in Figs. 1 and 5 uses the B0501 are intended for 25-waU audio
B0500B and B0501 B in conjunction amplifiers of similar circuitry except
with seven TO-39 transistors, ten for a 4-ohm speaker and a split 40-volt
diodes. and a 64-volt split power sup- power supply.
ply. The amplifier output is directly C ,,
i

(FLANGE I
,
I'
B0501 B0501A B0501B N-P-N I
E
B0500- B0500A- B0500B- P-N-P
VCBO .............................. 60 70 90 V
BOTTOM VIEW
VCEO .............................. 50 60 80 V
VCER(RBE = 100 Q) . . . . . . . . . . . . . . . . . . 55 65 85 V
JEDEC TO-220AB
VEBO .............................. _ - - 5 V
10 A (See dimensional outline "5".)
IC·································· _ __
IB·································· _ __ 4 A
Pr:
AtTC~25·C .................... " _ _ _ 75 w
At TC > 25·C ...................... __ See Figs. 2 and 4
Tstg.TJ ............................. _ -65t0150 ·C
NOTE· CURRENT DEflATING AT CONSTANT
TL: 'IOl.TACi£ lPPU£S ONLY 'Ttl THE DISSIPATION-
~c LIMITED PORTION AND THE: IS/b -LIMITED
At distances ~ 1/32 in. (0.8 mm) ~~~ PORTION OFlAAlillMUM OPERATING AREA
CURVE. DO NOT OERATE THE
from case for 10 s max ............... _ __ 230 ·C
~~~
SPECIFIED VALUE FOR Ie MAX
- For p-n-p devices, voltage and current values are negative. ~~~
TYPICAL PERFORMANCE OATA ~~~ ,00
"u~
For 40-Watt Audio Amplifier ,i ~ ~
Measured at a line voltage of 220 V, TA = 2S·C, and a frequency of 1 kHz, unless otherwise specified.
~I!i~
~ z
"
Power: IHF Power Bandwidth: ~~I
~NU
Rated power (8-Q load, at rated 3 dB below rated continuous power at ~~

distortion) ....... _.............. 40 W rated distortion _.. __ .. _... _.. _.80 kHz "
Typical power (4-Q load) _.... _...... 75W_
Typical power (16-Q load) . _..... _... 22 W
Sensitivity: '" ..,
CASE TEMPERATURE ITc1--C
'" ,,, 200
At continuous power-output
Total Harmonic Distortion: rating ... _................... 600 mV
Rated distortion .......... _.. _.... 1.0% Hum and Noise:
Typicalat20W . _.. _.... _.. _... _.0.05% Fig. 2 - Derating curve for aI/ types.
Below continuous power output:
1M Distortion: Input shorted ....... _... _...... 80 dB
10 dB below continuous power output at Input open .. _.. __ ... _.. _....... 75dB
60Hzand7kHz(4:1) .. _...... _. _.0.1% Input Resistance ................... 20 kQ
-Typical power(4Q load) with 46-volt split power supply and BD500A, BD501Aoutput ..... 40W
Typical power (4Q load) with 40-volt split power supply and BD500, BD501 output ...... _25W
•I
.
100.
PT (MAX.)·T5W
. ,--~'"I
~
• -f-'.~ ~
-r-~~
.
~.~
'"., ..
'",
"4
i.
~
10 =<.~>
Ii
~~
}-+--.,.....~I·"
~
~
~!
" ,-§ . "".
~ ..~<"
i ,f-£~ -"'"
--"l',,~'.
, S ~~%
~
,
'0'
. i, . l~-~~~
. ' . , .,'0
'0
~2CS-111t55RI
92CS-308l2
Fig. 1 - Block diagram and transistor complement for 40-watt ful/-complementary-symmetry

audio amplifier. Fig. 3 - Thermal-cycling ratings.
324 _____________________________________________________________________
POWER TRANSISTORS
80500, 80501 Series

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) 25°C
LIMITS'"
CHARAC· BOSOO" BOSOOA" B0500B"
TERISTICS
TEST CONOITIONS
B0501 B0501A B0501B
Min. Max. Min. Max. Min. Max.
UNITS
.
z
~ z
ICER VCE=45 V - 1 - - - - ~ 'I~~--+-rt+--t
RSE=
100 Q
VCE=55V
VCE=75 V
-
-
-
-
-
-
1
-
-
-
-
1
rnA :: --)"1
:3 Z - "CEO(MAX) tt j
IESO VES=5 V - 1 - 1 - 1 rnA :~~:a1r====t=t=a~
.. ..
a I, •• 60V
50'0' (80500,
{BD500A,80501)
8050lAI
VCEO IC=O.l A 50 - 60 - 80 - V II -aol/ (805008, B050lBl
. .
VCER IC=O.l A; RSE=100Q 55 - 65 - 85 - V 10
COLLEC TOR -TO -EMITTER VOLTAGE (VCE1- II
100 1000
fT IC=O.S A; VCE =4 V 5 - 5 - 5 - MHz .zc.-~ .. )

IC=5 A; VCE=4 V 15 90 15 90 - -
hFE
IC=3.S A; VCE=4 V - - - - 20 120
-
Fig. 4· Maximum operating areas for aI/ types.
VCE(sat)
IC= 5 A; IS=0.5 A - 1.2 - 1.2 - - V
IC = 3.5 A; IS = 0.35A - - - - - 1
VSE
IC=5 A; VCE=4 V - 1.8 - 1.8 - - V
IC=3.5A;VCE=4V - - - - - 1.5 2
an
VCE - 20 V; t - 0.555 3.75 - - - - - , LOAD
ISlb VCE = 25 V; t = 0.55 5 - - 3 - - - A

0
zolwAllTS
VCE = 30 V; t = 0.55 5 - - - - 2.5 - "\
~
,/
"'For characteristics curves and test conditions, refer to published data for prototypes (File 678):
2N6487 (B0501, B0501A); 2N6488 (B0501B); 2N6490 (B0500, B0500A); 2N6491 (B0500B).
~
= 2
f\
• For p-n·p devices, voltage and current values are negative. , 10 20 50 100 200 500 II< 21< 10K 201( 50t< lOOK
fREQUENCY-H.
Fig. 6 - Typical frequency response.

"
,
P'40W
Z f- an LOAD
,
,
2
"
I
, I' 10 20 50 100 zoo 500 II< 21( 51( 101( 201( 501( 1001(
FREQUENCY-HI
Fig. 7 - Typical total harmonic distortion as a

function of frequency.
(al
NOTES (for Fig. 5):
1. 01·010-01201A.
2. Resistors are 'Iz-watt, ± 10%, unless other-
wise specified; values are in ohms.
3. Non-inductive resistors.
4. Capacitances are in ~F unless otherwise
specified.
5. 55'C thermal cutout attached to heat sink
of output devices.
6. TO-39 case devices with heat radiator at-
tached.
7. Provide, heat sink of approx. 1.2'CIW per
output device with a contact thermal resis· (bl
tance of 1.3 'CIW max. and T A = 40 'C max.
Fig. 5 - 40-watt amplifier circuit featuring ful/-complementary-symmetry output using load line
limiting: (a) basic amplifier circuit, (b) power-supply circuit.
__________________________________________________________________ 325
POWER TRANSI.STORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
80533, 80534, 80535, 80536, 80537, 80538

Epitaxial-Base, Silicon N-P-N and P-N-P Fe.tules:
_ Low saturation voltages
VERSAWATT Transistors _
_
VERSA WA TT package
Complementary n-p-n and p-n-p types
_ Maximum safe-area-of-operation curves
General·Purpose Medium·Power Types for

The RCA·B0533-B0538 are epltaxlal-base plements of p-n-p types B0534, B0536, B

silicon transistors Intended for a wide and B0538, respectively_ C
variety of medium-power switching and
amplifier applications, such as series and
shunt regulators and driver and output
stages of high-fidelity amplifiers_ The
B0533, B0535, and B0537 are n-p-n com-
All types are supplied In the JEOEC TO-
220AB VERSAWATT package.
(FLANGEI
E E
C
92CS-27S19
JEDEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Values: (See dlmenllonal oulllne "S",)

N-P·N BD533 BD535 BD537
P-N·P BD534- BD53S- BD538-
VCBO ........................................ . 45 60 80 v
VCES(SUS) ..................................... . 45 60 60 V
VCEO(SUS) .................................... . 45 60 80 V
VEBO·········································· 5 V
IC············································· 8 A
lB············································· A
Pr: _ _ _ _ 50 _ _ __
TC :s25'C .•..•..•......••...................• _ _ _ _ 0.4 _ _ __ W
. TC >25'C, derate linearly ................. " ... . W/DC
Tstg, TJ •.••••••••.••.•.••.••..•••.•.••..•.•...• -65 to 150 _ __ DC
TL
At distances;;,: 1/8 In. (3.17 mm) from case 235 _ _ __
for lOs max................................. . DC
Fig. 2-Deratlng curve for all typell.
~~. COLLECTOR-TO-EMITTER VOLTAGE (VCE1-2 V _
1 .~+-~+++-4--+4-~-+--~~
o '~+-~+++-4--+4-~-+--+1-H
~
,L~ .·~::J:::t.:j::j::::t:=tt-tH------nii
.... v ....
I :~+-~~+-~-+~~-1~·~~~H
I 'I--+-+-I-H---l-++++---+--II\~
~ 10
1 • •
" • 810"'1 t ••• 1 " • 8 10
COLLECTOR CURItEHT (tC}-A Net-U •••
'2CM-S2&98
Fig. 3- Typical de bata characteristic for
Fig. 1-:Maxlmum safe-operatlng areas for all types. 80533, 80535, and 80537 typa•.
328 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ____
_ _ _ _-'-_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
80533, 80534, 80535, 80536, 80537, 80538

ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25"C
TEST CONDITIONSA UMITS
CHARACo VOLTAGE CURRENT BD533 BD53S BD537
TERISTIC V de Ade BD5344 BDsaeA BDsaeA UNITS
VCE VBE IC IB MIN. MAX. MIN MAX MIN. MAX.
456l - 100 - - - -
ICBO 6()8 - - - 100 - -
6()8 - - - - -
...
100
,.A
45 - 100 - - - -
ICES 60
80
-
-
- - 100 - -
100
_I -2 2 4 . !IO-I 2 _I
COLLECTOR CURRENT (:IC.-A
'10
Fig. 4-Typical dc beta characteristic for

lEBO 5 - 1 - 1 - 1 mA 80534, 80536, and 80538 types.
VCEO(SUS)- 0.1· 0 45 - 60 - 80 - V
5 0.01 20 - 20 - 15 -
hFE 2 0.5· 40 - 40 - 40 -
2 2" 25 - 25 - 15 -
hFE Groups
2 2· 30 75 30 75 30 75
J
2 3· 15 - 15 - 15 -
2 2· 40 100 40 100 40 100
K
2 3· 20 - 20 - 20 ,
L 2 2· 60 150 - - - -
(For B0533,
B0534 only)
2 3· 30 - - - - -
VBE 2 2 - 1.5 - 1.5 - 1.5
VCE(sat) 2· 0.2 - 0.8 - 0.8 - 0.8 V
6· 0.6 0.8- - 0.8- - 0.8- -
fT 1 0.5 3 12- 3 12- 3 12- MHz
R/lJC - 2.5 - 2.5 - 2.5 OCIW
... For Poflll devices, voltage and current values are negative.
i , 8 L 4 6 "10
.. VCBvalue COLLECTOR CURRENT (Ie I-A
• CAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer.
• Pulsed: Pulse duration = 300 ~s, duty factor = 1.5%. Fig. 5- Typical collector to-emltter saturation
.. Typical values. voltage characteristic for 80533,
80535, and 80537 types.
~
~
g
o.j
..
I f-ttFE-IO
I
V
z
"FE -10
=:4
•
,..
II'E- 10
~ ! / !J
g
~j 2
V Ii VV
~I" /" ~>
Jt •
-~
~
.
4
../
:1
~'?
:I]
::iii
::~
I
~
~ l--
V
!
~ ,V
O,D
L· , . .. -I
,
COLLECTOR CURRENT tIC'-A
. ..
'I(;S-U!)'.
-10 10- 1 I I
COLLECTOR CURREHTII.c)-A
10
,SIcs-sun
; 0
-10- 1
, . .• -I
,
COLL.ECTOR CURRENT (I.e I-A
.•.
tlCS-)2I"
-10
Fig. 6-Typical collector·to-emltter saturation Fig. 7-Typical base·to-emltter saturation Fig. 8- Typical base·to-emitter saturation
voltage characteristic for 80534, voltage characteristic for 80533 voltage characteristic for 80534,
80539, and 80538 types. 80535, and 80537 types. 80536, and 80538 types.
_______________________________________________________________ 327
80533, 80534, 80535, 80536, 80537, 80538

CASE TEMPERATURE ITe '-2,·C 20 ICASE TEMPERAlURE(Te )' 25·C 10 a CASE TEMPERATURE (T c)' 2S-c
Vee' -I II 818, :-182
i L---;--f'-., hFE'IO
" vcc' 30V
I "I--+--+--I-++---I--+-+-H 1 151--+--+-f"ct-+--t--t-_t_-H
J: ,
,
. ,.
1. I
--
>
" 'c-
,
10- 1
l 88_ 1 2
10
, I 10
10·' I 10
COLLECTOR CURRENT IIcl-A COLLECTOR CURREN:~!C~::-A 92CS-32~~_
COLLECTOR CURRENT(IcJ-A Nea-su.
Fig. 9-Typlcal gain·bandwidth product Fig. 10-Typical gain-bandwidth product Fig. 11-Typlcal saturated-switching time
characteristic for 80533, 80535, and characteristic for 80534, 80536, characteristics for 80533, 80535, and
80537 types. and 80538 types. 80537 types.
10 I
..
CASE
6 -~BI' 162
hFE' IO
TEMPERATURE ITc •
Vee' 3011
I
5&C .,.
t
CASE TEMPERATURE ITc) ·zs·c
) 'I-+-~+I-+-+-~+--t--t-~
~
u
z
~ __
,~~~+-+t-+-t-~+--t--t-Ti,
f ='~1'""',T_CJ_.-j25._"C-t-H---f-+-t-H
~
g, I :""""'r--.
~IO';t=~=4=t++"==~~t++=~=4=++1 §102~1==t~~t1~-j~i=~~~~;t4=~
~ :1-+-~+I-+-+-~k",~+--+++1 ~ :r---f_++++--+--++++--+-~~~
~ 1-+-~+I-+-+-+t--"I-"''''''"+-t-+1 o .t-+--t-rt-+-+--+-~+--t--+-~
~ ~ ~
~ 5 '1-·-j---+-++-+--+-~+--+--+-+44
~ 10 ~ 10
-10-1 6 e _I 6 8_ 10 10.1 2' I " 6 8'0 2' " 8 8'02 _10-12468_1 46!IO 46!.1O-2
COLLECTOR CURRENT IIcl-A ,2CS- 32&02' COLLECTOR-TO-BASE YOLTAGE IVce)-V 92CS-32f10J COLLECTOA-TO-BASE VOLTAGE (Vcei-V 92CS-3U04
Fig. 12- Typical saturated switching time Fig. 13-Typical common-base output capaci- Fig. 14-Typical common-base output capac/-
characteristics for 80534, 80536, and tance characteristic for 80533, tance characteristic for 80534,
80538 types. 80535, and 80537 types. 80536, and 80538 types.
328 ________________________________________________________________________
- - - - - - - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
B0550 Series
Silicon Transistors for 70-, 120-, 200-, and 300-W Quasl-
Complementary-Symmetry Audio Amplifiers
The RCA-B0550, B0550A, and B0550B are several hundred watts of audio output power TERMINAL DESIGNATIONS
silicon n-p-n transistors especially suitable in quasi-complementary-symmetry audio am-
for applications. in audio-amplifier circuits, plifier configurations that employ parallel C
in which they may be used as either driver output transistors_ Circuit examples, a recom- E01FLANGEI
or output unit. mended complement' of transistors, and per-
These devices, together with a variety of formance data are shown for 70-,120-,200-,
other transistors that serve as input devices, and 300-W amplifiers_ O' 0
VBE amplifiers for biasing, current sources,
The BO-550-series is supplied in the JEOEC B
load-line limiters (for overload protection), 12(S-P51'
and predrivers, may be used to develop TO-204MA hermetic steel case_

JEDEC TO-204MA
(See dlmen.lonal outline "A"_>
VCBO·
B0550
130
B0550A
200
B0550B
275 V tie Ii~'~C~URR\E~N~T
AREA
VAL.
5 ONLY TODERATING
THE DISSIPATJON.~I"TED
AT CONSTANT VOI..TAGE
DO NOT DERATE THE SPECIFIED
MAX.
PORTION
D PORTION Of ..... xl ..U.. -OPERATINO-
VCEO· 110 175 250 V ~~

~·w
VCERIRBE = 100 ill
vEBO·
130 200
5
275 V
i:~
5:l~
V 100
Ie -
IB .
PT
At Tc '" 25°C 150
7
2
W
A
A
!u
wu·
~:~
1>
.0
>
At TC 25°C See Fig. 1 101-:;: 2.
T stg , TJ . °c
~~a
-65 to 200
TL 2550751001251501752.00
At distance ~ 1/32 in. (0.8 mm) from seating plane CASE TEMPERATURE ITCI--c
92CS-19943
for 105 max. 230 °e
Fig. 1 - Derating curlle for al/ types.
100
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 25°C

LIMITS
CHARAC- TEST CONDITIONS BD5504 BD550A- BD550B- UNITS
TERISTIC
Min_ Max_ Min_ Max_ Min_ Max_
ICER
VCE= 110V - 1 - - - -
RBE = lOOn VCE = 175 V - - - 1 - - mA
VCE = 250V - - - - - 1
VCE = 95 V - 5 - - - -
10' 101 2 " 6 ~IO!) " 6 '106
ICEO VCE=150V - - - 5 - - mA NUMIIER OF THERMAL. CYCL.ES
2
VCE = 200 V - - - - - 5 92C5· 19922
lEBO VEB = 5 V - 1 - 1 - 1 mA Fig. 2 - Thermal-cycling ratings for a/l types.

VCEO IC = 0_2 A 110 - 175 - 250 - V
n -
. ··
CASE TEMPERATUAE(TCI .ZS-C
VCER IC= 0.2A; RBE = 100 130 200 - 275 - V ICURVES MUST IE DERATED L.INEARL....
llTHlcR1Sll TEMPERATURE)
fT IC=0.2 A; VCE= 10V 5 typo 5 typo 5typ. MHz
~ I
hFE
IC = 4 A; VCE = 4 V 15 75 - - - - !:! 10, IclMAXI CONTINUlus-1,,,.,,, ~1
'A
IC=2A; VCE =4 V - - 15 75 10 50 t< •
"';;0+"'...
VCE(sat)
IC = 4 A; IB = 0.5 A
IC = 2 A; IB =0_25 A
-
- -
2 -
-
-
2
-
-
-
2
V .5 "
il .t--t- --
f' '<';'0..
""0 I
VBE
IC=4A; VCE=4V
IC=2A;VCE = 4 V
0.75
- -
1.75 -
1
-
2
-
1
-
2
V
f! I
·
~ •t-- r-
8 •t-- t--
.
f---
VCEO MAX) - 110 v (BOSSOI
~-r
~=t::
~;:=I=
IS/b
VCE = 80 V; t = 1 S
VCE = 100 V;t= 1 S
VCE=140V;t-1S
1.87
-
-
-
-
-
-
1.5
-
-
-
-
-
-
1.07 -
-
- A
--'>
•
. . .. . .
I---VCEO (MAXI- 175 V (BOSSOA)
VCEO (MAXI· 250 V (ID550B
..
COLLECTOR-TO-[MITTEA VOLTAGE
IX!
~r
IYcEJ-V
_
6. For characteristics curbes and test conditions, refer to published data for prototype RCA8638D (File 1060).
_C'-SOII'
• For characteristics curves and test conditions, refer to published data for prototype 2N5240 (File 321), Fig. 3 - Maximum operating areas for all types.
--------------------------------__________________________________ 329
B0550 Series
70-Watt Amplifier
The 70-watt amplifier shown in Figs. 4 and supply. It is designed for direct coupling to
". ..
5 uses two B0550 transistors as output de- an B ohm load. Figs. 6 and 7 show typical
, 1
vices, and operates on a gO-volt split power
, II ;,0.[,1 ;
distortion characteristics for the amplifier. !!::::.,REFEAENCE ~ON 10~~-t CHANNEH
.. t-" BOTH
, >--{+t CHANNELS
- ~~ .' t-III
,, 1"-
0'
, ~··K~··· -t-
r-
oo,
001
, • 68
0 I
2 .. 68
I10
2
POWER OUTPUT 1POUT1- W

.. 68 , ." , ."
Fig. 6 - TypiCl!1 total harmonic distortion as a
function of power output at 1 kHz, for
the lO-watt amplifier.
IZCS-3OM?
Fig. 4 - Block diagram and transistor complement for 7tJ.watt qUBsi"l:omplementary-

symmetry audio amplifier with epitaxial-base output transistors.
'0,
II
r--1~~---r----------_,------------------~r_---.~~r_--~r_1r-. ••Oy
REfERENCE OISTORTION 10 51-1_ t-::.-
----- -----,
PROTECTION CIRCUIT
.. I
I
0.01
D. 4'1 0.27 2 .. 6'10;2 4 e~oo2 46111(;2 .. 61110 1(2 .. 611100 1(
" OW
FREOUENCY - Hr

. . . . .T
0.. . function of frequency at 35 W, for the
OW
70-watt amplifier.
• lO
D.
DO .. Typical Performance Data for 70-W Audio
Amplifier
---
L-____ ~~------ __ ~ ______ ~ ______________________ ~~~--~~- •• v Measuredatalinevoltageof220 V. TA z25°C.
and a frequency of 1 kHz, unless otherwise
1.1 specified.
Power:
Rated power (S-n load,
NOTES, at rated distortion). . . . 70 W
Typical power (16·Hload) . . 40 W
" D'·08.Dl1·'N539',D9.D'0.DI2.o'3-'N5393 Total Harmonic Distortion:
2. Resistors .... l/Z·watt, ±10%, un.... otherwise
splCified; vafues are in ohms. Rated distortion. . 0.5 %
3. Non·inductive ,-.;.tors. +45v 1M Distortion:
4. ClptCitancas Ire in pF unless otherwise splCifted 10 dB below continuous power
5. actc thermal cutout .t.heeI to heet sink of output at 60 Hz and 7 kHz (4: 1) <0.2%
O:Utput devices. I H F Power Bandwidth:
I, Mount each device on TO-39 heat sink. 3 dB below rated continuous
7. Attach TO·. heat sink Clp to device.net mount power at rated distortion ,5Hz to 50 kHz
on same heat sink with the output devices..
98. Provide hut tinll; of approx. l°CIW per output
L---:+----+_-4$V Bandwidth at I W 5 Hz to 100 kHz
Sensitivity:
_ _ with. contlC1thermal resistance of O.5°CIW
At continuous power-
mlx .•nd TA • 46°C tnIX.
output rating. 600 mV
'01 Hum and Noise:
92CII-3044& Below continuous power output:
Input, shorted. 100 dB
Fig. 6 - 10-INIItt amplifier circuit f.turing qua.i-complsment1lry-symmetry Input open . . . . . 85<:B
output lImp/oying epitllxilll-bsu con.truction output trBnliltors: With 2 kn resistance on 20-ft.
cable on input 97 dB
fa) iJMic IJmpllfier circuit. (b) poweNupply circuit ' Input Resistance 18 kn
330 ____________________________~----------------------------------
B0550 Series
120-Watt Amplifier It is intended for direct coupling to an 8 ohm '0,
The 120-watt amplifier shown in Figs_ 8 and load, but may be used on 4 ohm or 16 ohm
9 uses four BD550A transistors as parallel loads as shown in the Typical Performance
units in the amplifier output stages, and Data; Figs_ 10 and 11 show typical distortion
operates on a 130-volt split power supply_ characteristics for the amplifier_
0.01
i' "'10,1 i' ... 1I .. ".110 2"" 100
2 ....
POWER OUTPUT (POUTl-W

function of power output for single
channel (an) and both channels
driven at 1 kHz for 12D-Wamplifier.
HCIi-1CINI
Fig. 8 - Block diagram and transistor complement for 120·W quasi<omplementary-symmetry

audio amplifier with parallel output transistors.
~--~~-----;r------r----------------~---4r----t-r-'+:LV
22K
IW
. . . . 68 . . . . foil 2 .. 6' 2 .. 68 .... 6'

011 10 100 1000 10K
FREQUENCY - H~
150
Fig. 11 - Typical total harmonic distortion as

I a function of frequency for 6()"W
lOW 22 output for 120-Wamplifier.
2W
012 Typical Performance Data for 120-W Audio

Amplifier
Measured at a line voltage of 220 V, TA =2SC,
and a frequency of 1 kHz, unless otnerwise
33 200 pF
specified.
5% MOUNT CLOSE Power:
L-____~_!______~__~----~TO~T~RA=N~S=IS=T~O~R----~--~----~--__~.-65V Rated power (son load,
(al .tL. at rated distortion). . 120W
Typical power (4-0 load) . 120W·
Typical power (16-51 load) . 70W
NOTES, SW Total Harmonic Distortion:
1. 01·08 - lN5391; 09,D10 - lN914B; 011. Rated Distortion. 0.5%
Dl2 - lN5393 . 3-A SLOW-
2. Resistors are 1/2·watt, '10%. unless other· BLOW TYPE 1M Distortion:
wise specified; values are in ohms. 10 dB below continuous power
3. Non-inductive resistors. 220V oulput at 60 Hz and 7 kHz (4:11 0.2%
4. Capacitances are in,uF unless otherwise '50 Hz Sensitivity:
specified.
5. 95 C thermal cutout attached to heat sink of At continuous power output rating .900 mV
Input Resistance. . . 18 kn
output devices.
6. Mount each device on TO·39 heat sink.
7. Attach 10·39 heat sink cap to device and
-----...--. IHF Power Bandwidth:
3 dB below rated continuous
THERMAL
mount on same heat sink with the otuput CUTOUT power at rated distortion . 5 Hz to 50 kHz
devices . NOTE 5 Hum and Noise:
• 8. Pro . . ide heat sink 01 approx. 1 C/W per
output device with a contact thermal reo Below continuous power output:
$i5t.mce of 0,5 C/W max. and T A '" 45 C max. Input shorted. 104dB
Input open . 88 dB
92CM-30448
92<:5-30449 With 1 k.Q resistance
'01 on 20-ft cable on input. 104dB
Fig. 9 - 12().watt amplifier circuit featuring quasi-complementary-
symmetry output circuit with parallel output transistors: ·With a 90 V split power supply and 4-BD550
substituted for 4-BD550A,
fa) basic amplifier circuit, (b) power-supply circuit.
__________________________________________________ ___ 331
~
-
-
-
-
-
-
-
-
-
-
-
-
B0550 Series
200·Watt Amplifier split power supply_ It is intended for direct '.,
The 200-watt amplifier shown in Figs. 12 coupling to an 8 ohm load, but may be used
and 13 uses eight BD550B transistors, two as on 4-ohm or 16-ohm loads as shown in the
~
Typical Performance Data. Figs. 14 and 15
drivers and six as parallel units in the ampli·
show the typical distortion characteristics
~ Ie
i= 61::-J"fEF"ERENCE 01 TORTION CO.5 .,.1
fier output stages, and operates on a 160-volt
for the amplifier. ~a I
0.01
2 468 2 488 2 4'8 2468 2 468
10 100 1000 10K 1001(
fREQuENCY- H!

function of frequency at TOO-Wout-
put for 2O(J..Wamplifier.
Fig. 12 - Block diagram and transistor complement for 200-W quasi-complementary-symmetry

audio amplifier with parallel output transistors.
~
u
.
"'·'f=I=B~rnElIijI
•
auxe7. 1D5e08
~
I
~
.
18
~ 6 AEFERENC£ DISTORTION {D.! ""'I
~
Ci BOTH
u 2 CHANHElS,-t+-+II++H
~
"
..
~·'~a~'rttm!lmm
~. 1-I-t-Wt-+-l-++t-+r-.:mFFI=I#~fJJ.j
~~~fflEl!
2 488 2 ••• 2 4., 2." 2 •••
0.01 0.1 I 10 100
POWER OUTPUT ipourl-w

function of power output for single
channel and both channels driven at
7 kHz tor 2(}(J..Wamplifier.
NOTES: sw
1. 01-08 -IN5391; 09.010 - lN5316; OIl, --/.>--"'-<-~ . j r - - - - - A ,
012 - lN5393 4 -A SLOW-
2. Resistors are1/2·watt. ±10%. unless otherwise BLOW TYPE
specified; values are in ohms.
3. Non-inductive ,esiston. 220V
50 Hz
4. Capacitances are in J.lF un5ess otherwise
specified.
5. BO°C thermal cutout attached to heat
sink of output devices.
6. Mount each device on TO-39 heat sink.
7. Attach TO-39 heat sink cap to device THERMAL
CUTOUT
and mount on I8me heat sink with the output
NOTE 5
devices.
98. Provide heat sink of approx. 1°C/W per output
device with a contact thermal resistance of
O.5°C/W max. and TA ,. 45°C max.
-sov +sov
92CM-30441 (b) NL N·L
Fig. T3 - 200-watt amplifier circuit featuring qUasi;:omplementary_symmetr~CS-YJ~2
output circuit with parallel output transistors: (a) basic amplifier
circuit, (b) power-supply circuit.
332 __________________________________________________________ ~---------

POWER TRANSISTORS
B0550 Series
Typical Performance Data for 200·W Audio Amplifier
Measured at a line voltage of 220 V, TA = 25" C, and a frequency of 1 kHz, unless otherwise specified.
~
·: AMIIOfT 'TOIPfRATUflE (TA)- eoc
10TH CH.tMtE:LS CRtY'fN:
• 0 -500 W P£III CHANNEL
40-300 W Pfft CHANNEL
Power:
Rated power (8-n load, at rated distortion) 200W
~§ OJ.
I
Typical power (4·n load) .
Typical power (16·n load) .
200W·
120W
15c
~~
•
. 1I
Total Harmonic Distortion:
Rated distortion. 0.5%
1- •
~~O.a.
.- .· r-... •
··
0
~
I M Distortion:
10 dB below continuous power output at 60 Hz and 7 kHz (4:1) . 0.2%
Sensitivity:
I
At continuous power output rating . 900mV 0.001
I .... I .... I
I
.... I .... I •••
Input Resistance 18kn 10 10. 1C)l 10' 10'
F'IIIEQUENCY (f) - Hz
IHF Power Bandwidth:
3 dB below rated continuous power at rated distortion. 5 Hz to 35 kHz
Hum and Noise:
Below continuous power output: function of frequency for 30tJ.-W
Input shorted. 96 dB amplifier.
Input open . 84 dB
With 2 kg resistance on 20-ft cable on input 94dB
• With a 110·V split power supply and 8·B0550A substituted lor8·B0550B.
300·Watt Amplifier and operates on a 172·volt spl it power

supply. It is intended for direct coupling to I
.u.on' TDilN:MT'LIM: (TA). wc
I
'=I
The 300·watt amplifier shown in Figs. 16
and 19 uses two BD550B transistors as an 8 ohm load, but may be used on 4 ohm w 0 l
drivers and sixteen BD550B transistors as
parallel units in the amplifier output stages,
or 16 ohm loads as shown in the typical
performance data (Figs. 17,18,20,and21). I·,
!I!
K
r..
.. .... .... 10 101
I
101
••• .... '0'
I •••
FREQUENCY U1 - HI:
,
r--- L ---,
I OVERLOAD : Fig. 18 - Typical frequency response for 3CJO-W
I PR~~~CJa~ I amplifier.
IL __
SEEFIG.I9ICl!
. - __ .J
Ratings and characteristics of type CA3100

an~given in RCA data bulletin File No. 625.
Fig_ 16 ~ Block diagram and transistor complement for 300-W quasi-complementary·symmetry audio
amplifier with parallel output transistors.
Typical Performance Data for 300·W Audio Amplifier

Measured at a line voltage of 220 V, TA = 25 0 C, and a frequency of 1 kHz, unless otherwise specified.
Rated Power (8·n load at rated distortion) 300 W
Typical power 14·n load) . 300 W·
Typical power 116·n load. . . . 160 W
Total Harmonic Distortion (THO) _ See Figs. 17 and 21
Intermodulation Distortion liMO). . See Fig. 20
Sensitivity. 1.6 V for 300 W
Input Impedance. 10 kn
Hum and Noise:
Below rated power output:
Open input . . 104dB
Shorted input. ·0· . • • o· 112dB
Phase Shift +1 at 20 Hz,-13 at 20 kHz
Slew Rate. 35 VII'S
Rise Time. 2.51's
Damping Factor. . 200
·With 120 V split power supply and 18·B0550A substituted lor 18·B0550B.
___________________________________________________________________ 333
B0550 Series
1---------+;/
I A (+86 V) I
IN!\316 !
I I
I I
I I
I I
r. I I
I I I I I I I
I I
I
lOW lOW lOW tow lOW lOW lOW
BO~" 0.00 I
It lOt.[ CUMIDIT SET FOR 50 ",y AC"OSS 0.' A IlESIlTOft I I
92CL-30443 I I
NOTES:
lal
L ___ _____ J ~
1. Resistors are 1/2-watt. -5% carbon, unless leI
otherwise specified; values are in ohms.
2. Non·inductive resistors.
3. Capacitances are in pF unless otherwise
specified.
4. Kl - Relav, 'ingle-pole, single·throw,
normallv closed, with 24-V, 3 rnA coil.
5. TSSl - 70 C thermal cutout attached to
heat sink for output devices.
6. 51 - 10·A circuit breaker.
7. Common heat sink.- 175 cm.2 minimum.
y8. Provide heat sink of approJ(, 1 e/W per (bl 92CS~50880
output device with a contact thermal
resistance of O.S"C/W max. and
TA '" 45 C max.
Fig. 19 - 300·Waudio amplifier circuit featuring quasi-complementary
92CL-30443 symmetry with parallel output transistors: (a) basic amplifier
circuit, (b) power-supply circuit, and fc) protection circuit.
"
···
AMeIENT TEMPERATURE (TA).2~-C AMBIENT TEMPERATURE (TA'. 20
L,::
zO.06
ii
"~e
E~
0.1.
~O.~ "E
!:!r
•
•
-~
I~ , I"
I~:: V ~~O.OI:
I"::
~ 01>2 g
·· RESIOUAL WlOE ,
LOAD·.
~~
... .... ... .j . ... ...
BAND NOISE
....
0.01
0
0.01 .1
I
10
•••
100 1000
0.001
, III , 1111 I." ,U I •••
QJ 0.01 0.1 I 10 100 1000
CONT....... POftR OUTPUT 'PouT) - W CONnNUOUS POWER OUTPUT (POUT) - w
NCS-21U$JtI
Fig. 20 - Typical intermodulation distortion Fig. 21 - Typical total harmonic distortion
as s function of power at 60 Hz ass function of power at 1 kHz,
and 7 kHz with both channels both channels driven, for 30o-w
driven for 3OD-Wamplifier. amplifier.
334 ______________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
80643, 80645, 80647, 80649
8-Ampere N-P-N Darlington Power Transistors Features:

• Operates from IC without predrlver
45-60-80 Volts, 70 Watts • Low leskage at high temperature
Gain of 750 at 3A • High reverse secolld·breakdown
capability .
The RCA·B0643, B0645, B0647, and makes it possible for them to fie driven
B0649 are monolithl c sili con n·p-n
Applications:
directly from integrated circuits.
Darlington transistors designed for low· These devices are supplied in the JEOEC • Power switching
and medium·frequency power applica· TO·220AB (VERSAWATT) plastic pacKage. • Hammer drivers
tions. The high gain of these devices
• Series and shunt
regulators
80643 80645 80647 80649
VCBO···· .. ······· .. ···............. .......... 45 60 80 100 V TERMINAL DESIGNATIONS
VCEO(SUS) . . . . .. ... . . . . . . . . . . . .. . . . . . . . .. . . . .. . 45 60 80 100 V
VEBO' ........................................ . 5 V
IC ............................................ . 8 A c
12 A (FLANGE)
ICM .. ······················ .... · .. ··.· ....... .
lB'" ......................................... . 0.15 A
PT
TC" 25'C.................................... 62.5 W BOTTOM VIEW
TC > 25'C . . . . . . . . . . . . . . . . . . .. .. . . . .. . . .. .. ... -Derate linearly 0.5 _ _ _ W/'C
92.CS~27!519
Tstg.TJ........................................ -55t0150 ·C
'T L
JEOEC TO·220A8
At distances" 1/8 in. (3.17 mm) from case
for 105 max.. .. . .. . . . . . . . . . . . . . . . . . . . . .. . . . . 235 'C (See dlmenllonal outline "S".)
c
ELECTRICAL CHARACTERISTICS, At Case Temperature (T cJ 25°C
Unless Otherwise Specified r-----------,
, I
TEST CONDITIONS LIMITS 0---;-'......., I
CUR· I I
CHARACTERISTIC VOLTAGE
Vdc
RENT
Adc
B0643 B0645 UNITS II I
I
VCB VeE VBE IC Min. Max. Min. Max. IL _ _
10 kn 150 kn
_ _ _ _ _ _ _ --1
I
20 - 0.5 - -
ICEO 30 - - - 0.5
RESISTANCE VALUES
ARE TYPICAL
ICBO
45 - 0.2 - - mA
92CS- Z0691R3
60 - - - 0.2 Fig. I-Schematic diagram for all types.
Tc = 100'C
45 - 2 - -
60 - - - 2
lEBO -5 0 - 2 - 2
V(BR)CEO 0.1a 45 - 60 -
V(BRICBO 0.005 45 60 - V
V(BR)EBO
IE = 2mA
5 - 5 -
NOTE> CIoRRENT OERATING AT CC»fSTANT
VOLTAGE APPUES ~LY 10 THE OISSINTION-
LIMITED PORTION AND THE IS/b -liMITED
3 0.5a 1500b - 1500b - CURVE. DO NOT DERATE THE

SPfCIFJEO VALUE FOft .Ic MAX
hFE 3 3a 750 - 750 -

3 sa 75()b - 750b -
VBE 3 3a - 2.5 - 2.5
V
VCE(sat)
IB = 12mA
3a - 2 - 2
3 3 1 1
IT 1= 1 MHz MHz
3 3 10b - 10b - 2!1 ~ 15 IOOI2~ I~ I~ ZOO
ReJC - 2 - 2 'CIW CASE TEMPERATURE !Tcl-·C
a Pulsed; pulse duration = 200 ~s, duly factor = 1%. b Typical value. Fig. 2-Derating curve for all types.
_________________________________________________________________ 335
80643, 80645, 80647, 80649

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C

CUR·
CHARACTERISTIC VOLTAGE RENT BD647 BD649 UNITS
Vdc Adc
VCB VCE VBE IC Min. Max. Min. Max.
ICEO
40
50
-- 0.5
-
-
-
-
0.5
80 - 0.2 - -
ICBO
100 - - - 0.2
mA
80 2
Tc = 1OO'C
100 - - - 2
lEBO -5 0 - 2 - 2
V(BR)CEO 0.1a 80 - 100 -
V(BRPBO 0.005 80 100
V
V(BR)EBO
IE = 2mA
5 - 5 -
3 0.58 15()()b - 15()()b -
hFE 3 38 750 - 750 -
3 68 75()b - 750b -
VBE 3 3a - 2.5 - 2.5
VCE(sat) V
IB = 12mA
38 - 2 - 2
IT 1= 1 MHz
3
3
3
3
1
1()b
-
-
1
1()b
-- MHz
R6JC - 2 - 2 oCfW
8 Pulsed; pulse duration = 200 1'8. duty factor = 1'to. b Typical value.
COLLECTOR·rO-[MITTER VOLTAGE (VCE)- v

92CM-326ge
Fig. 3-Maximum operating area for a/l types.
336 ________________________________________________________________
POWER TRANSISTORS
80750, 80751 Series
Silicon Transistors for Features:

80- and 100-Watt • Low saturation voltages
Full-Complementary- • fr=4 MHz min.
Symmetry Audio Amplifiers
The RCA-6D750 Series and 6D751 Series n-p-n pairs that are especially suited for
types are p-n-p and n-p-n ballasted aUdio-output applications.
epitaxial-base silicon transistors, These transistors are supplied in the
respectively. The corresponding types in JEDEC TO-204MA steel hermetic package.
these series form complementary p-n-pl

JEDEC TO-204MA
oB0750 oB0750A oB0750B oB0750C P-N-P
B0751 B0751A B07518 80751C N-P-N
VCBO .......... · .. ··· ........ ·· .. .. 100 130 110 140 V

VCEO·· .... ·· .... · .. · ...... ···· .. .. 90 120 100 130 V
VCER (RBE=100 0) ................ . 100 130 110 140 V Typical Performance Data lor 100-W
VEBO ................•............. 5 V Audio Amplifiers
IC .......... ··· .. · .. ···· .......... .. 20 A (4 Ohms and B Ohms)
lB·· .................... · .. · ...... .. A
PT: Measured at a line voltage of 220 V,
At TC $ 25'C .................. .. 200 200 250 250 W rA=25'C, and a frequency of 1 kHz,
AtTC>25·C .................. .. See Figs. 1 and 2 unless otherwise specified.
Tstg, TJ .......................... .. -65 to +200
TL: Rated Power ............. 100 W 100 W
At distances 2: 1/32 in. (0.8 mm) Load Impedance......... 4.0 aD
from case for 10 s max. 230 Sensitivity ............... 530 mV 750 mV
Input Impedance ......... 10 KD 10 KD
Slew Rate ............... 25 V/p.s 25 V/p.s
Frequency Response. .. .. See Fig. 3
Square Wave Response. . See Fig. 5
Total Harmonic Distortion See Fig.4
Table I - Main Modifications

For an BO-W Amplifier
4.0 SD Units
Vs 70 94 V
010 6D751 6D751 A
all 6D750 6D7506
R26-R27 56 75 .0
Oa, 09, 010, all 1.5 1.5 °C/W
Heatsink
T cutout 95 95 °C
Load and Power Output vs. Types
Load pout=ao W Pou t=100 W

4.0 6D750/751 B07506/7516
Fig. 1 - Maximum operating areas for al/ types. aD 6D750A1751A 6D750C1751C
________________________________________________________________________ 337
80750, 80751 Series

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC)=2So C
LIMITS:!:
CHARAC- B0750· B0750A· B0750B· B0750C·
TEST CONDITIONS UNITS
TERISTIC B0751 B0751A B0751B B0751C
Min. Max. Min. Max. Min. Max. Min. Max
VCE=VCEO max.,
ICER - 1 - 1 - 1 - 1
RSE=100n
ICEO VCE=VCEO max.-20 V - 1 - 1 - 1 - 1 mA
IESO VES-5 V 1 - 1 1 1
VCEO IC-O.2 A 90 - 120 - 100 - 130 - V
VeER IC=0.2 A;RSE=100 n 100 - 130 - 110 - 140 -
IT IC=l A; VCE=10 V 4 - 4 - 4 - 4 - MHz
IC=5 A; VCE-2 V - - 25 100 - - 25 100
hFE
IC=7.5 A; VCE=2 V 15 60 - - 15 60 - -
VCE(sal)
IC-5 A; IS-0.5 A - - - 1 - - - 1
IC=7.5 A; IS=0.75 A - 1.5 - - - 1.5 - -
V
VSE(sal)
IC-5 A; IS-0.5 A - - - 2 - - - 2
IC=7.5 A; IS=0.75 A - 2.5 - - - 2.5 - -
VCE-35 V 5.71 - - - - - - -
IS/b
VCE=40 V - - - - 6.25 - - - A
1=1 sec.
VCE=45 V - - 4.44 - - - - -
VCE=50 V - - - - - - 5 -
:tFor characteristic curves and test conditions. refer to published data for prototypes
(RCA Data Bulletin File Nos. 1060 and 1061): RCA 8638 series for 80751 series and
RCA 9116 series for BD750 series.
JlJ
III
~ -3 dB
~
1\ 1"601:
+40~
g 20 PHASE +20
o :;
t:
~ "H--l-Hi='t--H+!--lI"-
~ -20 ~
~ loHr-I-+1ct--ct--++*++Nd-t-tiit:i
'\ -80
1\ ""'-120"
-140
C.o,SE rEI,IPEI'I.4TUFlE(Tc)-" 1002 .. 158 1K 2 .. 08. 0K 2 .. 68KlO~ .. 88'M
FREQUENCY (Hd
Fig. 2 - Current derating curve for all types,

Fig. 3 - Complete amplifier typical frequency
response.
I
I
1
IOV-IO ./DIV.
'ZCS-32996
10 68 100 2 ~ 681K 2 "88 10K 2 .. 5'looK

FREQUENCY (Hz) 9ZCS-3ua,
Fig. 4 - Total harmonic distortion as a function of Fig. 5 - 20-kHz square wave output waveform.
frequency.
338
80750, 80751 Series
R3
RI
R2
PARTS LIST
(4-ohm and 8-ohm loads)
Parts 4-0hm Load a-Ohm Load Parts 4-0hm Load a-Ohm Load
R1 10 K 10 K R34 4.7 -1W 10 -1W
R2 1 1 C1 100 pF 100 pF
R3 1K 1K C2 0.47 /,F - 50V 0.47 /,F - 50V
R4 220 220 C3 0.47 /'F - 50V 0.47 /,F - 50V
R5 (note 6) Potentiometer, Potentiometer, C4 12 pF 12 pF
10 K 10 K C5 100 pF 100 pF
R6 8K2 8K2 C6 22 /,F - 25V 22 /'F - 25V
R7 1 K -1W 1 K 8-1W C7 22 /'F - 25V 22 /,F - 25V
R8 1 K-1W 1 K 8 - 1W C8 10 nF 10 nF
R9 1K8 1K8 C11 3.9 nF 3.9 nF
R10 2K2 2K2 C12 3.9 nF 3.9 nF
R11 1K8 1K8
01 Zener 15V Zener 15V
R12 220 220 02 Zener 15V Zener 15V
R13 4K7 1K 8
R14 03 1N4148 1N4148
820 820
04 1N4148 1N4148
R15 820 820
R16 4K7 1K8 01 (note 2) RCA1A10 RCA1A10
R17 39 K 39 K 02 (note 2) RCA1A11 RCA1A11
R18 47 47 03 (note 3) RCA1A18 RCA1A18
R19 47 47 04 2N5323 2N5323
R20 390 1K 05 2N5321 2N5321
R21 56 56 06 RCA1A18 RCA1A18
R22 (note 5) Q7 RCA1A19 RCA1A19
Potentiometer, Potentiometer,
1K 1K 08 (note 4) RCA1C03 RCA1C12
R23 100 100 09 (note 4) RCA1C04 RCA1C13
R24 100 100 010 (note 4) B0751B B0751C
R25 3 K 9 -1W 8 K 2 - 1W 011 (note 4) B0750B B0750C
R26 50 68 012 (note 2) RCA1A11 RCA1A11
R27 50 68 013 (note 2) RCA1A10 RCA1A10
R28 3 K 9 -1W 8 K 2 - 1W A1 CA3100 CA3100
R29 180 470 F1 4A 3A
R30 180 470 F2 4A 3A
R31 100 100 L1 2/,H 4/,H
R32 0.27 - 7W 0.68 - 7W V 39 V 52 V
R33 0.27 -7W 0.68 -7W
NOTES:
1. All resistors are non-inductive.
2. Mount each device on heat sink of 30 cm 2 min. area.
3. Mount on same heat sink as driver and output devices 08.09.010. and 011.
4. Provide heat sink of approx. 1.2° C/W per output device with a
contact thermal resistance of 0.4°C/W and TA;45°C max.
95"C thermal cutout attached to heat sink of output devices.
5. Adjust to get a quiescent current of 200 mAo
6. Adjust to gelO-V output with O-V input signal.
Fig. 6 - 100-W audio amplifier (de coupled).
________________________________________________________________________ 339
POWERTRANSISTORS ____________________~------------------------------------
80795, 80796, 80797, 80798, 80799, 80800, 80801, 80802
Epitaxial·Base, Silicon N·P·N and P·N·P Features:

VERSAWATT Transistors • VERSA WA TT package
• Complementary n-p-n and p-n-p types
General-Purpose Medium-Power Types for • Maximum safe-area-of-operation curves
Switching and Amplifier Applications specified for dc operation
The RCA-80795, 80797, 80799, and regulators and driver and output stages of
80801 n-p-n transistors and their p-n-p high-fidelity amplifiers_
complements 80796, 80798, 80800, and
These transistors are supplied in the
80802, respectively, are epitaxial-base
JEOEC TO-220A8 (VERSAWATI) plastic
em
silicon types intended for a wide variety package_ • TERMINAL DESIGNATIONS
of medium-power switching and amplifier
L:
applications, such as series and shunt
(FLANGE) 0
N-P·N BD795 SD797 BD799 BD801
BOTTOM VIEW
E
I
P-N-P BD796- BD798- BD800- BD802- 92CS-2751S
VCSO- ................................ . 45 60 80 100 V

VCEO(suS) ............................. . 45 60 80 100 V JEDEC TO-220AB
vESO ············ ............... , ..... . 5 V
~ .................................... . 8 A (See dimensional oulllne "S"_)
~ .................................... . 3 A
PT
Te"25'C ............................ . 65 W
Tc>25'C ............................. . Derate linearly 0.522 _ _ _ W/'C
Tstg,TJ·························.·· ... . -55to 150 'c
Tl
At distances :'1/8 In. (3.17 mm) from
_ _ _ _ _ 235 _ _ _ __
case for 10 s max .................... . 'C
- For p-n-p devices, voltage and current values are negative.
" CASE T[MPERATURE CTCI-·C

150 1'75 200
Fig. 2-Current derating curves for all types.
r:
~ ,
COLLECTOR-rO -IE MitTlER VOLTAGE (VeE)' 2 V
I I _~ \-
15O"C
§ ~ITCI''''C r-----
~C"'~
"~~~r
~ 2
~~ -55 G
~
~
~'::'I
~~ :~~~ _t---c-- 1":-- b

o~
~
0
;
. r-t--- J- --c--
r--
§ , . ----
r-----
g
2
COLLECTOR-TQ- EMITTER VOLTAGE(VCEl-V
0·1
001
, , ,0.1 , , ,, , 4

'2CM-32796
Fig. 3-Normalized dc-beta characteristics
Fig. 1- Maximum operating areas lor.II types. for all types.
340 ________________________________________________________________________
B0795, B0796, B0797, B0798, B0799, BD800, B0801, B0802

ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C
VOLTAGE CURRENT BD799 BD801
Vdc Adc BD800- BD802-
ICBO
80 - 0.1 - -
100 - - - 0.1
rnA
lEBO -5 0 - 1 - 1
VCEO b 0.18 0 80 - 100 - V
2 18 30 - 30 -
hFE
2 3a 15 - 15 -
VBE(ON) 2 3a - 1.6 - 1.6
V
VCE(sat) 3a 0.3 - 1 - 1
IT 1=1 MHz 10 0.25 3 - 3 - MHz
ROJC - 1.92 - 1.92 'CIW
a Pulsed; Pulse duration = 300 ~s, duty factor = 1.8%.
b CAUTION: The sustaining voltage VCEo(sus) MUST NOT be measured on a curve tracer .
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) 25°C

Vdc Adc BD796- BD798-
VCB VCE VBE IC IB Min. M8x. Min. M8X.
ICBO
45 - 0.1 - -
60 - - .- 0.1
rnA
lEBO -5 0 - 1 - 1
VCEOb 0.18 0 45 - 60 - V
hFE
2 18 40 - 40, -
2 38 25 - 25 -
VBE(ON) 2 38 - 1.6 - 1.6
V
VCE(sat) 38 0.3 - 1 - 1
IT 1=1 MHz 10 0.25 3 - 3 - MHz
ROJC - 1.92 - 1.92 'CIW
a Pulsed; Pulse duration = 300 ~s, duty factor = 1.8%.

b CAUTION: The sustaining voltage VCEO(sus) MUST NOT be measured on a curve tracer.
• For p·n·p devices, voltage and current values are negative.
,
w
~
~
1.8 CASE TEMPERATURE ITc '"Z5"C
,. ,
"
6-D~O_15
'2:-::4
-
~
,t:
'2
'?
,y 0,1
'~~
,
.0'.
OV
:<1:..::.--7
0. 0.8
• VeEl!oOll AT Ic/~ -:::::::-- ..

6 ...",,~
r
C
'" ===r
,.
~ 0.4 AT
,.2'
I
/ ,
~
"eE
./
0
0.01
, . .,
VeEbatl AT Ie IIe-IO
0,1
, .--.,
COLLECTOR CURRENT (Ie I-A
I
, ,
92CS·32795
00'
0.01
, .. 2
0.1 TIME OR
" 68
, , ..
~ULSE WID+~
,
2 "68
,
(tp)-rnl 100
2 "68
lOCO
92CS-J2197
Fig. 4- Typical "on" voltage characteristics Fig. 5- Typical thermal·response charac-

for all types. teristics for all types.
_________________________________________________________________ 341
B0895, B0895A, B0897, B0897A B0899, B0899A, B0901

Features:
8-Ampere N·P·N Darlington Power Transistors
• Operated from Ie without predriver
45-60-80-100-Volts, 70 Watts • Low Leakage at high tamperature
• High reverse second-breakdown
Gain of 750 at 4 A capability
(B0895A, B0897 A, B0899A)
Applications:
Gain of 750 at 3 A
(B0895, B0897, B0899, B0901) • Power Switching
• Hammer drivars
• Series and shunt
regulators
The RCA-BD895, BD895A, BD897, for them to be driven directly from
BD897A, BD899, BD899A, and BD901 are integrated circuits_ • Audio amplifiars
monolithic silicon n-p-n Darlington tran- These devices are supplied in the JEDEC
sistors designed for low- and medium- TO-220AB (VERSAWATI) plastic package_
frequency power applications_ The high
gain of these devices makes it possible TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Absolute-Maximum Values: c

IFLANGE)
B0895 B0897 B0899 B0901

B0895A B0897A B0899A BOTTOM VIEW
VCBO·· ........ _................... . 45 60 80 100 V
92CS-27519
VCEO(sus) .......................... . 45 60 80 100 V
VEBO········ ...................... . 5 V
JEOEC TO-220AB
IC·································· 8 A
lB··· .............................. . 0.1 A (See dimensional oulilne "S"_I
PT
TC"25'C ......................... . 70 W
TC>25'C ......................... . Derate linearly 0.56 W/'C
Tst9 ,TJ ............................ . -65to 150 'c
TL
At distances;. 1/8 in. (3.17 mm) from
case for 10 s max ................. . - - - - - - 235 - - - - , - - - - 'C
-----------,I
I
I
I
I
I
,
<J2CS·206'.1IR2
Fig. 2-Schematic diagram lor all types.
NOTE: ClRRENT OERATlN:; AT CONSTANT

VOLTAGE APPUES ONLY TO THE D1SSJPATION-
"~
LIMITED PORTIOH AND THE J:S/b -LIMITED
~ CURVE. 00 NOT DERATE THE
SPEClrtEO VALUE FOR :Ie MAX
~
'00
I
'0
. CASE TEMPERATURE (Tel-·C·

ISO 115 ZOO
92CS-32690
Fig. 1- Maximum operating areas for all types. Fig. 3-Derating curve for all types.
~2 __________________________________________________________________
80895, 80895A, 80897, 80897A 80899, B0899A, 80901

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC = 25°C Unless
Otherwise Specified

Vde Ade BD895A BD897A
VCB VCE VBE IC IB Min. M8X. Min. M8X.
ICEO
20 0 - 500 - - ,..A
30 0 - - - 500
45 - 0.2 - -
ICBO
60 - - - 0.2
TC = 100'C 45 - 2 - - mA
60 - - - 2
lEBO -5 0 - 2 - 2
VCEO(sUS) 0.1 8 0 45 - 60 - V
hFE B0895,B0897 3 38 750 - 750 -
B0895A,B0897A 3 48 750 - 750 -
VBE B0895,B0897 3 38 - 2.5 - 2.5
B0895A,B0897A 3 48 - 2.5 - 2.5
V
VCE(sat) 80895 38 0.012 - 2.5 - 2.5
B0897
B0895A,B0897A 48 0.016 - 2.8 - 2.8
hie
I = 1 MHz 3 3 1 - 1 -
R9JC - 1.78 - 1.78 'C/W
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC 25°C Unless

Otherwise Specified

VOLTAGE CURRENT BD899
CHARACTERISTIC B0901 UNITS
Vde ~ de B0899A
VCB VCE VBE IC IB Min. M8X. Min. M8x.
ICEO
40 0 - 500 - - ,..A
50 0 - - - 500
ICBO
80 - 0.2 - -
100 - - - 0.2 mA
Tc = 100'C
80 - 2 - -
100 - - - 2
lEBO -5 0 - 2 - 2
VCEO(sus) O.la 0 80 - 100 - V
hFE B0899,B0901 3 38 750 - 750 -
B0899Aoniy 3 48 750 - - -
VBE B0899,B0901 3 38 - 2.5 - 2.5
B0899Aonly 3 48 - 2.5 - - V
VCE(sat) B0899 3a 0.012 - 2.5 - 2.5
B0901
B0899A only 48 O.ot6 - 2.8 - -
hie
3 38 1 - 1 -
I = 1 MHz
R9JC - 1.78 - 1.78 'C/W
a Pulsed: Pulse duration = 300 1'5, duty factor = 1.8%.
________________________________________________________________________ 343
POWERTRANSISTORS ____________________________________________ ~ __________
BDX10, BDX13, BDX23

Features:
Hometaxial-Base, High-Power • Maximum safe-area-of-operation curves
Silicon N-P-N Transistors • High dissipation capability
• Thermal-cycling rating curves
Applications:
The RCA-BDX10, BDX13. and BDX23 are BDX10 can withstand an ISlb current of • High-fidelity amplifiers
silicon n-p-n transistors intended fora wide 1.95 amperes (min.) at a VCEO of up to 60 • Power-switching circuits
variety of high-power applications. The volts. • Solenoid drivers
hometaxial-base construction of these All these transistors are supplied in the • Low-frequency inverters
devices renders them highly resistant to steel JEDEC TO-204MA hermetic package.
second breakdown; for example. the
BDX10 BDX13 BDX23

VCBO ................................... . 100 50 v
VCER(sus)
RBE=100 n ............................ . 70 95 v
VCEO(sUS) .............................. . 60 40 v
VCEV
VBE=-1.5 V ............................ . 90 50 v JEDEC TO-204MA .
VEBO ................................... . 7 5 7 V
IC········································ 15 15 15 A
7 (See dimensional oullln6 "A ".j
lB··'·,···,··,···,···,,···················· 7 7 A
PT
S2~C ................................ . 117 117 117 w
.~ . ~:-s::
> 25°C ................................ . _ _ _ Derate linearly to 200 ___ °C .".,-
TJ, Tstg ................................. . -65 to +200 °C 1 s;? i MAX .lOO"~

TL: ,
4.~
During soldering, at distances
1/32 in. (0.8 mm) from seating
plane for lOs max. . ................ , . 235 °C
z
0
~
. r\'\"" ~~ ...
t.,"'(,>9~ C'..."
~
~o<
" ~
~~
~ 'f.l'."'"
• ,
~ ~
. , . ,.,
q 0
~o
'0 , , ,
'0
NuMBER or THERMAL Cl"CLES
'0'
Fig. 2 - Thermal-cycling rating chart for BDX1D,
CCLLECTOR·TO·EMITTER VOLTAGE (VCEI· .. II

CASE n:MPERATURE {TCI·Z5"C
i ' I"-....
} ""~-lv--/-i-l-l-l-+--''il'\:+tt--t-H-H
r' /
i 17
:.01----t--H++--+-+++t-'\-!'.I,\:-t--t-t-'
~~
w_+--+-++4--+--+-++t--i--t-tii
.. 6 e 2 4" I 1 '8
•• I 0.1
COL.L..Ul'Oft CURRENT (Ic)-A
I 10
, COLLECTOR - TO- EMITTER VOLTAGE (VeE )-V
Fig. 3 - Typical gain-bandwidth product for aI/

Fig. 1 - Maximum operating areas for BOX10. types.
344 __________~------------------__------------------------------__
BDX10, BDX13, BDX23

ELECTRICAL CHARACTERISTICS, TC=2SoC Unless Otherwise Specified

CHARAC- Voltage Current
BDX10 BDX13 BDX23 UNITS
TERISTIC V de Ade
ICEO 30 0 - 0.7 - - - -
40 -1.5 - - - 2 - -
ICEX
100 -1.5 - 5 - - - -
ICER (100 0) 85 - - - - - 0.5
ICEX 40 -1.5 - - - 10 - -
eASE-TO-EMITTER VOLTAGE{\IBE'-~2CS~2~7RI
TC=150°C 100 -1.5 - 30 - - - - rnA
-5 - - - 10 - - Fig, 4 - Typical input characteristics for
lEBO -4 - - - - - 1.0 BDXIO and BDXI3.
-7 1.0 - - - - -
ytBRLCBO 0.1 - - 50 - - -
V.tBRLCEV -1.5 0.1 - - 50 - - -
V(BR)EBO
0 - - 5 - - -
IF=0.01 A
V
VCEO(SUS) 0.28 0 60 - 40 - - -
VCER(SUS)
0.28 70 - - - 95 -
RBE=100 0
VCEV(SUS) -1.5 0.18 90 - - - - -
4 48 20 70 - - 20 70
hFE* 4 88 - - 15 60 - -
4 108 5 - - - - -
COlLECTOR-TO-EMITTER VOLTAGE (VeEI- 4 v
4 48 - 1.5 - - - 1.5
VBE
4 88 - - - 2.2 - - f I~";'- -,....
~
'Z.~. C
48 48 - 1.0 - - - 1.0 V 60 .,/ \"f..C'-:'--
VCE(sat) 8a 0.8a - - - 1.5 - - ~ ~~~~

10 a 3.3a - 3 - - - - g 40 C
~".(O. ""
!;
hIe
1=1 kHz
4 1 15 120 - - - - ~
b 20
4 1 BOO - - - - -
~
IT
kHz
-
Ihle
ISlb
tp=1 S
4
39
1 10
-
-
-
-
3 -
-
-
-
-
A
g
0.01
, ,, 0.1
, . ..
1.0
COLLECTOR CURRENT {IC)-A
,- ...
nonrep. 60 1.95 - - - 1.95 -
- 1.5 - 1.5 - 1.5 °C/W Fig. 5 - Typical dc-beta characteristics for
ROJC
BDX10.
0Pulsed. Pulse duratlon-300 ~s, duty lactor-1.8%.
:i:These types can be supplied in four dilferent beta groups in the range hFE=2D-250 at VCE=4 V and IC=O.5 A•.
Please contact your local RCA Sales Representative lor details.
3 0
00
10 ZO 30 40 50 60 10
CCLLECTOR- TO-EMITTER VOLTAGE IVCEI-v
I.
BASE-lO-EMITTER VOLTAGE (VSE1-V
Fig. 6 - Typical transfer characreristics for Fig. 7 - Typical output characteristics for BDX10.
BDX10 and BDXI3.
________________________________________________________________________ 345
BDX24
Features:
Hometaxial-Base, Medium- • Maximum safe-area-of-operation curves
Power Silicon N-P-N for dc and pulse operation
• VCEV(sus) = 50 V min
Transistor • Low saturation voltage: VCE(sat) = 1.5 V
at 'C= 1.SA
Rugged Devices for Intermediate- Applica (ions:
Power Applications in Industrial • Power-switching circuits
and Commercial Equipment • Series- and shunt-regulator driver and
output stages
The RCA-BDX24 is a hometaxial-base sili- • High-fidelity amplifiers
con n-p-n transistor intended for a wide • Solenoid drivers
variety of medium- to high-power appli-
cations. The BDX24 is supplied in a steel
JEDEC TO-213MA hermetic package.
MAXIMUM RATINGS, Absolute-Maximum Values: JEDEC TO-213MA

BDX24
Vcso ......................................................... . 50 v
VCEO ......................................................... . 40 v (See dimensional outline uN".)
VCEV(sus)
V SE =-1.5 V .................................................. . 50 v
V ESO ......................................................... . V
~ ............................................................. . 4 A
'S ............................................................. . A
PT :
~s~C ................................................... . 29 w
~>~C .................................................... . derate linearly to 200°C Q
T stg • TJ ............................................. .. -65 to +200 °C ;;:
TL ~
At distances 2: 1/32 in. (0.8 mm) from seating plane • '00
for 10 s max .......................................... .. 235 ~
~~80
50 15 100 125 150

CASE TEMPERATURE tTcl-·C
Fig.2 - Derating curve.
4 6 8 10 '" 6 8100
COLLECTOR-TO-EMITTER VOLTAGE IVCEJ- V
92CM-33584
Fig.1 - Maximum operating area. F;g.3 - Typical input characteristics.
346 _____________________________________________________________________
POWER TRANSISTORS
BDX24
ELECTRICAL CHARACTERISTICS , a t C ase Tempera ure (T)
CI = 25°C
LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS
Min. Max.
ICBO
VCB= 30 V - 1
rnA
(IE = 0) VCB = 30V,TC = 150°C - 5
lEBO
(IC = 0) VEB = 5 V - 5 rnA
VCBO
(IE = 0) IC = 50 rnA 50 - V
VCEO(sus)
(IB = 0) IC=0.1-'.-2A 40 - V
VCEO(sus)
(VBE = -1.5 V) IC = 0.05 -'.- 1 A 50 - V
VCE(sat) IC - 1.5 A,IB = 0.15 A 1.5 V
VBE o IC = 1.5 A,vCE = 4V - 2.2 V
hFER' IC = 1.5 A,VCE - 4 V 25 100
hFE1/hFE2 IC - 100 mA,VCE - 4 V 1.6
IS/b VCE - 40 V,IC = 725 rnA 1 s
·Pulsed: pulse duratIOn = 300 /1S, duty factor = 1.5%.
#The BDX24 can be supplied in four different beta groups as follows:
GR. 4-hFE = 20-50 at IC = 100 rnA, VCE = 4 V
Please contact your local RCA Sales Representative for details.
.
g~;~EiZ~~,r~~~rr~~):i';!~GE IVeEI ·4V leo COLLECTOR-lO-EMITTER VOLTAGE (YCEI-"Y
. ,.,
~
I
t---
:111:1
:Di
r'Vhl1 1[1:11+
. IT'
11::iCTn r°l-+-t-++lit1_+-+
1+11tt-t-++tt---t-1
: "oH--rt1I+I_-tl_t-+tt---i-++t+-+--I
« _il~~~~.,~,·~e~~-T-t+~~
j ''''r-r- ~. ~::2::
f, V r':: -....
L'Ii..<j'Vi.:·
, / t-t-t*-t---tfft---H
~ 0.8 I "'" ~ §
~ 80
. .10;
v?'~'ri-i+t--t--T-+it---t-i-i'!d--t--I
I: 1::11: [Jog ~40~
.6 1 I I I Ii 0 ':, l I n ~
~
~ HI 1':1' 1:::: 'Iii'" r
0. , , 8
10
, 10
COLLECTOR CURRENT {:tel-iliA
,, , , ., , Z • S8
"'
COLLECTOR CURRUIT (lcl-A
Fig.4 - Typical gain' bandwidth product. Fig.S - Typical transfer characteristics. Fig.6 - Typical de beta characteristics.
BASE-TO-EM1TT£R VOLTAGE (VBEI-V
Fig.7 - Rever~e-bias second-breakdown

characteristics.
347
BDX33, BDX33A, BDX33B, BDX33C, BDX33D,

BDX34,BDX34A, BDX34B, BDX34C
10-Ampere N-P-N and P-N-P Darlington Features:
Power Transistors • Low leakage at hiGh temperatura

• High reverse second·breakdown capability
40-60-80-100-120 Volts, 70 Watts Applications:

• Power switching
• Hammer driven
Gain of 750 at 4 A (BDX33, BDX33A, BDX34, BDX34A) • Series end ,hunt regulators
Gain of 750 at 3 A (BDX33B, BDX33C, BDX33D, BDX34B, BDX34C) • Audio amplifieR
These RCA devices are monolithic silicon transistors are complementary to the BDX34,
n-p-n and p-n-p Darlington transistors de- BDX34A, BDX34B, and BDX34C ·p-n-p TERMINAL DESIGNATIONS
signed for low- and medium-frequency power devices.
applications. The high gain of these devices
All these transistors are supplied in the
makes it· possible for them to be driven
JEDEC TO-220AB package.
directly from integrated circuits. The BDX33, (FL&GEI
BDX33A, BDX33B, and BDX33C n-p-n
MAXIMUM RATINOS, _uio-Maximum Values: 8DX~ 8DX33A BDX338 BDX33C BDX33D
8DX34 BDX34A BDX34B BDX34C.
BOTTOM VIEW
COLLECTOR·TO-BASE VOLTAGE ...... _•..•. _................... VeDa 4S 100 120 92CS-27'19
60 80 V
COLLECTOR·1l).EMlneR VOLTAGE:
JEDEC TD·220AB
With .xter..... ~ltter rnilt8nCe (Roe) - 1000, sustaininll ....•. VeER'''') 46 60 80 100 120 V
With . . . open, .....alnl.. •.•..•••••...•......•.....•...•.•..•• VceofSU1) 46 80 80 100 120 V
With""~VBE--1.5V •••••••.•••••.•••••••.••.•• VCEXC....' 4. 80 80 100 120 V (See dimensional oulilne "S"_)
EMITTER·TO-BASE VOLTAGE................................... VEBO 6 V
CONTINUOUS COLLECTOR CURRENT............................ IC 10 10 10 10 10 A
CONTlMJOUS BASE CURRE:NT .•..••..•..•.•.•.•..••..•..••..•.• 0.25 0.25 0.25 0.25 0.25 A
TRANSISTOR DISSIPAnON: ..,.18
::==:::~~ :::::::::::::::::::::::::::~::::
70 70 70 7. 70 W
o.m. II.,.,I¥' 0.66 wf'c
TEMPERATURE RANGE:
_ _ Oponod. . (Junc1Ionl •••••••••••••••••••••••••••••••• -65 to + 150 DC
LEAD TEMPERAtuRE (Dwi.. _inol'
At cIiIt8nceI >118 in. 13.17 mrnl from~for ,Ounu. ............ . 23& DC
10
COlLECTOR-TO-EMITTER VOLTAGE (VcEI-V
92CS-29309R1 92CS-29SIO
Fig. ·7 - Maximum operating areas for Fig. 2 - Maximum operating areas for
BDX33-series types. BDX34-series types.
M8 ________________________________________________________________
POWER TRANSISTORS
BDX33,BDX33A,BDX33B,BDX33C,BDX33D,
BDX34, BDX34A, BDX34B, BDX34C
ELECTRICAL CHARACTERISTICS, At CIMe Temperature ITC) = 25"C Unless Otherwise Specified
VOLTAGE CURRENT BDX33 BDX33A BDX33B BDX33C BDX33D
SYMBOL UNITS
V de A de BDX34· BDX34A· BDX34Bt BDX34ct
VCB VCE VBE Ie IB Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
60 a - 0.5
ICED 50 a 0.5
With base open 40 a 0.5
30 0 0.5
20 a 0.5
60 0 10
ICED 50 a 10
TC=100oC 40 a 10
30 a 10
20 a 10
mA
120
100
ICBO BO
60
45
120 5
ICBO 100 5
TC = 100°C 80 5
60 5
45 5
lEBO -5 a 10 10 10 10 10 mA
0.1" 0 120 -
VCEO(sUS) 0.1" 0 100 -
0.1" 0 45 60 80
VCER(sus)
0.1" 120 -
0.1" 100 - V
(ABE) = lOon
0.1" 45 60 80
-1.5 0.1" 120 -
VCEV(sus) -1.5 0.1" 100 -
-1.5 0.1" 45 60 80
3 l' 750 - 750 - 750 -
hFE
3 4" 750 - 750 -
3 3" 2.5 - 2.5 - 2.5
V
VBE
3 4" 2.5 - 2.5 -
VCE(sat)
3" OD06 - 2.5 - 2.5 - 2.5
V
4" 0.008 - 2.5 - 2.5 -
VF 8 4 4 4 4 4 V
hfe
f= 1 kHz
5 1000 - 1000 - 1000 - 1000 - 1000 -
hfe 5 20 20 20 20 20
f = 1.0 MHz
ES/bb
ABE = lOon
L = 12 mHo types
BDX33 types 1.5 4.5 120 - 120 - 120 - 120 - 120 -
L = 3 mH, mJ
BDX34 types 1.5 4.5 30 30 30 30 30
ISlb
tp = 0.5 s nonrep. 25 2.8 2.8 2.8 2.8 2.B
BDX33 types 36 1
A
BDX34 types -20 -3.5 - -3.5 - -3.5 - -3.5 - -3.5 -
-33 -1 -1 -1 -1 -1
R9JC 1.78 - 1.78 - 1.78 - 1.78 - 1.78 °CIW
• For p-n-p devices, voltage and current values are negative .

• Pulsed: Pulse duration = 300 J,lS, duty factor = 1.B%
b ES/b is defined as the energy at which second breakdown occurs under specified reverse bias conditions.
ESlb::: 1/2L12 where L is a series load or leakage inductance and I is the peak collector current.
349
POWERTRANSISTORS ______________________________________________________ ~
BDX33,BDX33A,BDX33B,BDX33C,BDX33D,
BDX34,BDX34A,BDX34B,BDX34C
100,
·
• . ~ t-..
., .
~ 2.!
g " ~I>"
~ i'\ ~.>~...
·· i
~ ;:'
~
C
10 a:
~ .
~
~ \ I~.>
i
p\~~~"
;; 4
~ ,"
, I~n,
;
10'
. , , 10'
, , ., COLLECTOR CURRENT IIel-A
-I
, ..
COLLECTOR CUI'IItENT UtI-A
-10
, .. -100

Fig. 3 - Thermal-cycling rating chart for Fig. 5 - Typical dc-beta characteristics for
BDX33-series types.
all types. BDX34-series types.
..,
--
COL.L!CTOR-TO-EMITfER VOLTAGE (Vcr:)-' v CO!..UCTOR SUPPLY VOLTA'E !Ycc,·2I) v
I, • -Ia2 -Ie/llOO
."
1-
,.• i'-r!-!,.
~ -8
, !
..
, ~
-r-ka.
, .
IASE-TO-EMITTER VOLTAGE (VIE)-V
,
0.'
, , ,
COLLECTOR CURRENT 11cl-A
, . ,, , .
!t2CS-19920
10
o
COLLECTOR-TO-EMITTER SATU".TION 'lQ.T.Cif,; [VCEltclt~~

Fig. 6 - Typical transfer characteristics for characteristics for BDX33-series Fig. 8 - Typical saturation characteristics for
BDX33-series types. types. BDX34-series types.
COLlECTQfI-rO-EMITTER VOLTAGE IVCE,1.-5\/"
1.41------ I
,.,~
I IOO.12~*C
--- t!:..
IOO.12~·C
, f"!.. I
0.'--- bJ
O.6~- i 1'-l 1"- , u
~
IC 118 !FOReEO "FEI-IOOO
tc -12~·C
I l"~ ~ ~
0.' "-........ 8
-I -2
8ASE-TO~EMITTER VOLTAGE l"BE1-V
-3
o.ze-----
0.' i
COLLECTOR CURRENT Ilel-A
:1t I :. i
COLLECtOR-tO-EMITTER SATURATION VOLTAGE

1 ,
[VeE« sat I] - "
,tcs·totIM

Fig. 9 - Typical transfer characteristics for characteristics for BDX34-series Fig_ 11 - Typical saturation characteristics for
BDX34-series types. types. BDX33-series types.
COlLECTOft CURRENT (Ie)'IA

COLLECTOR-TO-EMITTER VOLTAGE !VCEI-' "Hit
COLLECTOR-tO-EMITTER VOlTAGE (Vc£"S
CASE TEMPERATURE 11CI-25'C
"
".
2.'
6 IIOJ of 6. I 2 . . , . 10
BAst-TO-EMITTER VOLTAGE (VBEI-V-
FREQUiENCY ifI-MHr COLLECTOR-TO-EMITtER VOLTAGE ("eE)-V lKI-tHU
Fig. 12- Typical small-signal gain for Fig. 13 - Typical input characteristics for Fig. 14 - Typical output characteristics for
BDX33-series types. BDX33-series types. BDX33-series types.
350 __________________________________________________________________
POWER TRANSISTORS
BDX33, BDX33A, BDX33B, BDX33C, BDX33D,
BDX34,BDX34A,BDX34B,BDX34C
COLLECTOR-fO-EMITTER VOLTAGE (VCE"'!i V
IC.SE~
H~·· .
~ -7.!i
: .,
~ .
~ ,e.j=~~~=f~~~7f~**~f=~
., . '1
0.001
,H=...
0,01
... ... ...I ,e ,
, fIIe., ,I II L ,
,
FAEQU[/rtCYUI-I,IHI
,e
4612
BASE-TO-EMITTER VOLTAGE IVatl-V
COI..L,ECTOR-TO-EMITT[A VOLTAGE I "'CE1- V
Fig. 15 - Typical smal/·signal gain for Fig. 16 - Typical input characteristics for Fig. 17 - Typical output characteristics for
BDX34·series types. BDX34·series types. BDX34·series types.
________________________________________________________________________ 351
POWERTRANSISTORS ____________________________________________ ~ __________

Features:
8-Ampere N·P·N Darlington • Operates from Ie without predriver
Power Transistors • Low leakage at high temperature
45-60-80-100 Volts, 60 Watts capability
Gain of 750 at 3 A
Applications:
• Power switching
• Hammer drivers
~-----------.,
The RCA-BDX53. BDX53A. BDX53B. and I • Series' and shunt regulators

BDX53C monolithic silicon Darlington I
transistors are designed for low- and I
medium-frequency power applications. I
The high gain of these devices makes it I TERMINAL DESIGNATIONS
possible for them to be driven directly I
from integrated circuits. B
E
C
(FLANGE)
C
Fig. I-Schematic diagram for al/ types.
BOTTOM VIEW
92CS-27!519

BDX53 BDX53A BDX53B BDX53C JEDEC TO-220AB
VCBO····· .................................. . 45 60 80 100 V
VCEO(SUS) ................................... . 45 60 80 100 V
~oo········································ 5 V
~ ........................................... . 8 A
lB··········································· . 0.2 A
Pr
TC"25'C .................................. . 60 W NOTE, CURRENT DERATING AT CONSTANT
VOLTAGE APPLIES ONLY 10 THE DISSIPATlON-
TC>25'C .................................. . Derate linearly 0.48 W/'C L.IMITED PORTION AND THE IS/b -LIt04ITED
Tstg.TJ ...................................... . -65to + 150 'c CURVE. 00 NOT DERATE THE
sPECIFIED VALUE FOR Ie MAl(
TL
AI distances ;>1118 in. (3.17 mm) from case
for 10smax................................. . 235 'c
'" "
CASE TEMPERATURE (TCI-OC '" 175 200
Fig. 3-Derating curve for al/ types.
..
~
10 • COLL.ECTOR -TO-EM ITTER VOLTAGE{ VCE)' 3 V
4
CASE TEMPERATURE{TC )-2S·C r='1=
!
I-
~
~;
104
.:
2
I----- .- .........
'"
0;; ...) ..7
..
;~ 2
~a:103 V 1'\
~
o •
~
~
10 roo
COLLECTOR-TO:' EMITTER VOLTAGE IVCE )- V
2
102
0.1 I .
COLLECTOR CURRENT tIc I-A 92CS~ 32255
10
92CM-;'22~4
Fig. 4-Typical dc-beta characteristics for a/l
Fig. 2-Maximum operating areas for al/ types. types.
352 __________________________________________________________________
- - - - - - - - - - - - - -____________________________________________ POWERTRANSISTORS

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) 25°C
VOLTAGE CURRENT
CHARACTERISTIC
Vdc Adc BDX53 BDX53A UNITS
22 0 - 500 - - COLLECTOR CURRENT (Ie ). 211
COLLECTOR-lO-EMITTER VOLTAGE (VCE'-3 II
\
ICEO
30 0 - - - 500
I'A
CASE TEoprATU"E 'TC 'I"'C ,I
ICBO
45 - 200 - -
60 - - - 200 QI
24 •• 204611
10
2468
100
2468
1000
lEBO -5 0 - 2 - 2 mA fREQUENCY ( II-MHz
VCEO(SUS) 0.1a 0 45 - 60 - V Fig. 5- Typical small·slgnal gain for all types.

hFE 3 3a 750 - 750 -
VBE(sat) 3a 0.012 2.5 2.5
10 COLLECTOR-lO-EMITTER VOLTAGEIVCE J-3V
VCE(sat) 3a 0.012 - 2 - 2 CASE TEMPERATURE ITc 1-25-C
V
VF
3b - 1.B - 1.B
Bb 2.5C - 2.5C - 17.5
u
ROJC - 2.0B· - 2.0B 'CfW

H
a Pulsed: Pulse duration = 300 ~s, duty factor = 1.5%. b IF value. c Typical value.

CHARACTERISTIC VOLTAGE CURRENT I 2 :3 4 !5
BASE-TO- EMITTER VOLTAGE {VSEI- V 92CS.32257
Vdc Adc BDX53B BDX53C UNITS
Fig. 6- Typical transfer characteristics for all
VCB VCE VBE IC IB Min. Max. Min. Max. types.
ICEO
40 O. - 500 - -
50 0 - - - 500
I'A
ICBO
BO - 200 - -
100 - - - 200
lEBO -5 0 - 2 - 2 mA
VCEO(SUS) 0.1a 0 BO - 100 - V
hFE 3 38 750 - 750 -
VBE(sat) 38 0.012 - 2.5 - 2.5
VCE(S8t) 38 0.012 - 2 - 2
V
VF
3b - 1.B - 1.B
Bb 2.5 c - 2.5c -
ROJC - 2.0B - 2.0B 'CfW
Fig. 7- Typical saturation characteristics for
8 Pulsed: Pulse duration = 300 ~s, duty factor = 1.5%. b IF value. c Typical value.
all types.
~~~~fec2T~:E ~~~~LY - -
··
'0. VOLTAGElVccl-;'OV
fASE TEMPERATURE (TC 1-2!!-C - -
I
'~
··
·,
-- r-
"
I-.!!.
,,,,,I---
BASE CURRENTIlal-mA 92CS-3Z~9

0.1
, . ..
COLL.ECTOR CURRENT lIe )-A
92C$-;'2260
10
Fig. 8- TypIcal saturation characteristics for Fig. 9- Typical saturated switching·time

all types. characteristics for all types.
_____________________________________________________________________ 353
POWERTRANSISTORS __________ ~ _____________________________________________
BDX~3, BDX83A, BDX83B, BDX83C

Features:
15-Ampere N-P-N Darlington Power Transistors • Operates from Ie without predriver
40-60-80-100 Volts, 125 Watts Gain of 1000 at 5 Amperes • High reverse second·breakdown capability
, c Applications:
r--~-------,
• Power switching
The RCA-BDX83, BDX83A, BDX83B, and • Hammer drivers
I
BDX83C are monolithic silicon Darlington I • Series and shunt regulators
transistors designed for low- and medium- , I • Audio amplifiers
frequency power applications. The high gain I
of these devices makes it possible for them I
to be driven directly from integrated circuits. I TERMINAL DESIGNATIONS
The BDX83-series types are supplied in the I i
L _________ ~
JEDEC TO-3 hermetic steel package.
,

JEDEC TO·3
BDX83 BDX83A BDX83B BDX83C
(See dimensional oulline "AU.)
V CBC .•...•................ 45 60 80 100 V
··
'00
VCEO(susl .. ...... .. ................ 45 60 80 100 V
V EBO ............................. . 5 V •I
fz 1\
:·
IC ..•............................... 10 10 10 10 A f',.
0
ICM ... ... ........ .......... ...•.... 15 15 15 15 A
IB ................................. . 0.25 0.25 0.25 0.25 A ~
;;
PT
125 125 125 125 W
· r-
~
'r--
Derate linearly at 0.714 W/OC
T stg , T J ............................ . - - - - - -65 to +200 - - - - - '0 , 4 6 8 10 2 I> 61O~ 2 4 6 6 :0(;
'0'
TL NUMBER Of" THERMAL CYCLES
At distances ~ 1/32 in. (O.8 mm) Fig. 3 - Thermal·cycling rating chart for
from seatjng plane for 10 s max. 235 - - - - - - all types.
~
.. COLLECTOR-TO-EMfTl[It ¥C»..TAQ[ Nul- 3V
r--
! ,
~ to"
i-w:
u:-
0-
4
t--jIf "p f"I
i~
· ... ....
z
~.
~
~ : (0;.01;
I-"" ,
. ..
\\
OJ
, ,
Fig. 4 - Typical dc·beta characteristics
I
-
.1eI-..,....
for all types.
..• ·:, tUllllIt(MT uel .....

COLLICTOA-TO-£MITTELII VOLT,. (VeE)-'
CAll TtM,UAlUIIE (TCI-U-e
,
I
~
j
,0>
i :
··
··,
" \
OOLLECTOR-TO-EMITTER VOLTAGE (VCEI-V

"~
. • '0.1
, . .. , !\ . ..
FII'EOUEhCY IfI-MHr
~
92CM-29144 Fig. 5 - Typical small'signal gain for

Fig. 2 - Maximum operating area for all types. all types.
3M __________________________________________________________________
POWER TRANSISTORS
BDX83, BDX83A,BDX83B,BDX83C
ELECTRICAL CHARACTERISTICS, Ar Case Temperature (TC) = 250 C Unless Otherwise
Specified
CHARAC·
VOLTAGE CURRENT
TERISTIC BDX83 BDX83A UNITS
Vdc Adc
SYMBOL
VCE VEB VBE IC IB Min. Max. Min. Max.
20 0 - 1 - -
ICED
30 0 - - - 1
ICEV
45 -1.5 - 0.5 - -
60 -1.5 - - - 0.5
mA
TC=150oC
45 -1.5 - 3 - - BASE-lO-EMITTER VOLTAGE !'olBE1-V
60 -1.5 - - - 3
lEBO 5 0 - 5 - 5 mA Fig. 6 - Minimum values of reverse-bias
VCEO(sus) O.la 0 45 - 60 - V second-breakdown characteristic

(ESid for all types.
3 la 750 - 750 -
hFE 3 5a 1000 - 1000 - COLL!CTO"-TO~IE"ITTI!R .VOLTAGIE IVelE I- 3 V ~
3 loa 250 - 250 -
"
VBE
VCE(sat)
3
3
5a
loa
5a Om a
-
-
-
2.8
4.5
2
-
-
-
2.8
4.5
2
V
.
."
I
~,.
V
VF -10 - 4 - 4 =
hfe
5 1 1000 - 1000 - '!.
f = 1 kHz
u
Ihfel
f = 1 MHz
5 1 20 - 20 -
ESlb b
Fig. 7 - Typical input characteristics
L= 12 mH, -1.5 4.5 120 - 120 - mJ
for all types.
RBE=100n
I SIb 35 2.2 - - -
t = 1 5, 50 - - 0.9 - A
non rep. 30 4.16 - 4.16 -
ROJC - 1.4 - 1.4 °CIW
apulsed: Pulse duration = 300 1l5, duty factor = 1.8%.

b ES/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions.
ES/ b = YZU 2 where L is a serie~ load or leakage inductance. and 1 is the peak collector current.
8ASE~TO-IE"ITTIER VOLTAGE (V8EI-V

'ZC$~IIl'Z411t1

for all types.
COLLECTOR SUPPLY 'IIOLTAIilE ~c:I"20Y

" I e · -1.2 "11:"00, TC.2'·C
"
-+~.:::""....~
,.• I-""--=---+--+---1f----+---1......
~
a
10 IOOO,15-t:
f
Ie II,CI"OItCED hFE)"IOOO ~
Tc·l~a·c;
o·.r----+--+--+-+-+I--F'....old
COUECTo.t.TO-~"ITTtR VOlTAGE IYefl-v
NCS·'"2~
o I 2 ] 4
COLLECTOR'TO-[MITT[R SATURATION
5
~OLTAGE
6 7 8
[VCE IIIII]-V
9KS·2Oa~1I
COLLECTOR CURRENT II C '-o\ .'"
Fig. 9 - Typical output characteristic, Fig. 10 - Typical saturation characteristics Fig. 11 - Typical saturated switching time
for all types. for all types. characteristics for all types.
___________________________________________________________________ 355
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC' = 2SOC Unless Otherwise

Specified

CHARAC·
VOLTAGE CURRENT
TERISTIC BDX83B BDX83C UNITS
Vdc Adc
SYMBOL
VeE VEB VBE IC IB Min. Max. Min. Max.
ICEO
40 0 - 1 - -
50 0 - - - 1
ICEV
80 -1.5 - 0.5 - -
100 -1.5 - - - 0.5
mA
TC=150oC
80 -1.5 - 3 - -
100 -1.5 - - - 3
lEBO 5 0 - 5 - 5 mA
VCEO(sus) O.la 0 80 - 100 - V
3 la 750 - 750 -
hFE 3 5a 1000 - 1000 -
3 lOa 250 - 250 -
3 5a - 2.8 - 2.8
V
VBE 3 lOa - 4.5 - 4.5
VCE(sat) 5a O.Ol a - 2 - 2
V
VF -10 - 4 - 4
hfe
f = 1 kHz
5 1 1000 - 1000 -
Ihfel
f = 1 MHz
5 1 20 - 20 -
ES/bb
L= 12mH, -1.5 4.5 120 - 120 - mJ
RBE = lOOn
ISIb 70 0.37 - - -
t = 1 5, 85 - - 0.25 - A
non rep. ao 4.16 - 4.16 -
ROJC - 1.4 - 1.4 oCIW
aPulsed: Pulse duration =300 "S, duty factor = 1.8%.

bES/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions.
ES/b = %L1 2 where L is a series load or leakage inductance, and I is the peak collector current.
U8 __________________________________________________________________
POWER TRANSISTORS
BDY29
Hometaxial-Base High-Current Silicon .Features:
• Hi~ dissipation capability
N-P-N Transistor • High VCEX ratings

·15-A specification for hFE and VCE(sat)
Rugged Silicon N-P-N Devices for Applications .

1
TJ J)(.. zol.c
• Low saturation voltage with hi .. beta
i'-I~<_~
in Industrial and Commercial Equipment
~ TERMINAL DESIGNATIONS
The RCA·BDY29 is a hometaxial-base silicon. n-p-" transistor i= 100 <
··· ~~ '" ~tffi

~
intended for a wide variety of high-power-high-current appli·
~
cations. Typical applications for the BOY29 include power- Q
switching circuits, audio amplifiers, series- and shunHegulators. il- "+c< '4
I'
driver and output stages, dc-to-dc converters, inverters~ and ~ r-- • -(. J0 -1:l
solenoid {h:-mmer)/relay driver service. ~

., I*I~~ ,
... . , . .."r-..... ,
'c
The device is supplied in the popular JEOEC TO·3 package.
10.
•• 10
J,
Fig. 1- Thermal·cycling rating chart.

JEDEC T0-3
MAXIMUM RATINGS, Absolute-Maximum Values: (See dimensional outline "A".)
COLLECTOA·TO-BASE VOLTAGE __ ,_ VCBO '00 V
COLLECTOR-TO-EMITTER VOLTAGE:
With -1.5 V (VBE) & RBE '" 100 n ... ,. VCEX 90 V
COLLECTOR TO-EMLTTER VOLTAGEIVC[ ,.2.v
With base open .. _ .......................... , , , VCEO 7. V
EMJTTER·TO·BASE VOLTAGE .... , . , .. V EBO 7 V
CONTI NUOUS COLLECTOR CURRENT .. 'e 30 A ;2.
PEAK COLLECTOR CURRENT ..... .
CONTINUOUS BASE CURRENT ........ , .... .
'eM
'.
30
7.'
A
A ~
.'
V-:
-....
TRANSISTOR DISSIPATION: 0
At ~se temperetures up to. 25 oC . . • .
At cae temperatures above 25 C ..... , ....
PT
220
Derate linearly 10 2OQ°C
W iL
"~ ,. ,
~+
~~
TEMPERATURE RANGE:
Storage & Operating {Junctlonl .. , .. " ..... . -65 to 200 'e
~
:i1 80 .~~
, N'J.,
.,
§
PIN TEMPERATURE (During soldering): u •
'e i>.~l-
~
At distance ~ 1/32 in. (O.B mm) from seating plane for 10 s max, ....••• , •••...... 230
~ J'i~
~ II ..... IS
0.1 LO
COLLECTCft CURR£NTCIcl-A
" 10
Fig. 3 - Typical dc beta characteristics.
COLLECTOR-TO-EMLTTER VOLTAGE (VeE I -2.'1
«
10
I
-0
!:
...
Z
IIJ
Q:
Q:
:::>
0 ,
BASE-TO-EMLTTER "OLTAGE'{~E)-"
Q:
...
0
0 Fig. 4 - Typical transfer characteristics.
IIJ
-'
-'
0
0
COLLECTOR CURRENT IIcl IBASE CURRENT {Ie j_ LO
.
!"
H
~20
~
0.1

o O.~ 0., o.n L.2' I., L.r.I
COLLECTOR-TO-EMLTTER SATURATION VOLTAGE"[-"'a:I.ot~-V
'KS-~'.
Fig. 2 _ Maximum operating areas. Fig. 5 - Typical saturation-voltage characteristics.
357
POWERTRANSISTORS--__________________ ~ __________________________________
BDY29
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCJ = 25' C Unless Otherwise Specified

VOLTAGE CURREN
CHARACTERISTIC SYMBOL BDY29 UNITS
Vdc Adc
VCB VCE VBE IC IB Min. Max.
With emitter open ICBO 100 - 1 rnA
With base-emitter junction reverse-biased ICEX 100 -1.5 - 1 rnA
With base-emitter junction reverse-biased
&TC= 1SOOC ICEX 100 -1.5 - 10 rnA
With base open ICEO 60 0 - 2 rnA
Emitter Cutoff Current lEBO -7 0 - 2 rnA
DC Forward Current Transfer Ratio hFE 2 15" 15 60
Coliector·to·Emitter Sustaining Voltage:
With base-emitter junction reverse-biased
(RBE)= lOOn VCEX(sUS) -1.5 0.2 90 - V
With external base-ta-emitter resistance
(RBE) = 100 n VCER(sus) 0.2 85 - V
With base open VCEO(sus) 0.2 0 75 - V
Base-ta-Emitter Voltage VBE 4 30a - 3.5 V
Collector-ta-Emitter Saturation Voltage VCE(sat) 15" ·1.5 - 1.2 V
Second· Breakdown Collector Current:

With base forward· biased and l·s,
nonrepetitive pulse IS/b b 60 3.66 - A
Second·Breakdown Engergy:
With base reverse-biased and
L = 40 mH, RBE = 100 n ES/bc -1.5 5 500 - mJ
Magnitude of Common·Emitter, Small·Signal,
Short-Circuit, Forward Current Transfer Ratio: 16
f = 0.05 MHz Ihfel 4 1 4 (Typ.)
Commorr-Emitter. Small-Signal, Short-Circuit,

forward Current Transfer Ratio:
f = 1 kHz hfe 4 1 40 -
Thermal Resistance:
Junction-to-Case ROJC - 0.8 °CIW
"Pulsed; pulse duration = 300 /.Is, rep. rate = 60 Hz; duty factor .. 2%.
bl SIb is defined as the current at which second breakdown occurs at a specified collector voltage with the emitter-base junction
forward biased for transistor operation in the active region.
cES/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions.
ES/b = 112U 2, where L is a series load or leakage inductance and I is the peak collector current.
2 4 " 'OZ 2 4 " '101 2 4 e '104 2 ~" a()~

EXTERNAL BASE-TO-EMITTE~ RESjSTANct(~BE1-a
BASE-TO-EMITTER VOl.TAGE !....BE I-V COLLECTOR-TO-EMITTER \IOLTAGE WCE)-V
Fig. 8 - Sustaining voltage vs. base-ta-emitter

Fig. 6 - Typical input characteristics. Fig. 7 - Typical output characteristics. resistance.
358 _____________________________________________________________________
POWER TRANSISTORS
BOY37
Hometaxial-Base, High-Current Silicon Features:
• High dissipation capability -150 W
N-P-N Transistor • a·A specification for hFE. VSE. and VCE(sat)

• VCEX -160 V min.
• Low saturation voltage with hiw. beta
Rugged High·Voltage Device for Applications
The RCA-BDY 37 is a hometaxial-base silicon n-p-n transistor TERMINAL DESIGNATIONS

and output stages, dc·to-dc converters, inverters, and solenoid
intended for a wide variety of high-voltage high-current (hammerJ/relay driver service. The BOY 37 employs the c
applications. Typical applications include power-switching popular JEDEC TO-3 package.
'~
circuits, audio amplifiers, series- and shunt-regulator driver
MAXIMUM RATINGS, Abso/ute-MIIIC;mum VII/ves:

COLlECTOA-TO·BASE VOLTAGE VCBO '60 V
With blse open VCEO '40 V
With reverse bias (VBE) of -1.5 V VCEX '60 V JEDEC TO·3
EMITTER-TQ.BASE VOLTAGE .. VEBO V
COLLECTOR CURRENT: (See dimensional outline "A".J
Continuous
Peak.
'C '6 A
~~.,~.c
30 A
'CM
BASE CURRENT:
Conti nuOUS . . . . . . • . . . _ .. 'B A
PUk _._ ,S A • T,
'BM 1 100
., I'" ~.,I
~j
PT
At case temperatures up to 25°C. 'SO W f
At ease temperatures above 25°C ~ .1"f"~~!4.l
.
~ f"+.o(:
" . I\~ . ~
TEMPERATURE RANGE:
Storage" Operating (Junction) . -65 to -+200 °c ~
PIN TEMPERATURE (Ouring Soldering):
At diltlnees,2:.1f32 in. 10.8 mml from else for 10s max. 230 °c
~ '" (,/_ Jo •
, - ... -~; [\ <
0
$;. K~
!I • • 104
, . 1-
•• be
, .J. • ·10·
,
Fig. 2 - Thermal·cycling rating chart.
COLLECTOR-TO-EMITTER VOlTAGE IVCE '04V! 1\ !
f
2
t--.. III I II I
I I III I 1111I
: I ~SE TEMPERATURE (T C)-12!5·C -
i~
~ I..., r<
.. 10 I/+--
~,
I 2!5"C
i·
r
U
H V I\.
>-
Z
UJ
a:
a:
;:)
u 0.01
.0.1 I
" .. , ...
10
f'::::;:
a: COLLECTOR CumENT t:IC'-A
o
>-
u
UJ Fig. 3 - Typical dc beta characteristics.
-'
o-'
u
0.1
6 B 10 6 8 100
92C5- 21477
8ASE-TO-EMITTER \oQl..TAGE (V8EI- v
Fig. 1 - Maximum operating areas. Fig_ 4 - Typical transfer characteristics.
359
BDY37
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel = 2ft'e Unless Otherwise Specified

CHARACTERISTIC SYMBOL VOLTAGE CURRENT
BDY37 UNITS
Vdc Ad<
VCB VCE VEB VBE IC Ie IB Min. Max.
With emitter open ICBO 140 0 - 2 mA

reverse-biased ICEX 140 -1.5 - 2 mA

ICEX 140 -1.5 - 10 mA
reverse-biased and T C = 1500 C
With base open ICEO 120 0 - 10 mA
Emitter-Cutoff Current lEBO 7 0 - 5 mA
DC Forward-Current Transfer Ratio hFE 4 sa 15 60
Collector-ta·Emitter Sustaining
Voltage:
With base-emitter junction reverse·
biased ,RBe = 100 m VCEX'sus) -1.5 0.1 160 - V

resistance (Ase) = 100 n
VCER'sus) 0.2" 150 - V
With base open Vceo'sus) 0.2" 0 140 - V
Base-ta-Emitter Voltage VBE 4 sa - 2.2 V
Collector-ta-Emitter Saturation
VCE's,!) sa 0.8
- 1.4 V
Voltage -
Second-Breakdown Collector
Current:
With base forward-biased and
1'$ nonrepetitive pulse
IS/bb 60 2.5 - A
Second-Breakdown Energy:
With base reverse-biased and
L=40mH, RBe= lOOn ES/bc -1.5 2.5 0.125 - J
Small-Signal, Shan-Circuit,
Forward-Current Transfer I hlel 4 1 4 -
Ratio' I = 50 kHz)
Common-Eminer, Small-Signal.
Short-Circuit. Forward-Current hIe 4 1 40 -
Transfer Ratio (I = 1 kHz)
Thermal Resistance:
Junction-to-Case R8JC - 1.17 ·C/W
• Pulsed; pulse duration = 300 lAS. rep. rate =60 Hz. duty factor <; 2%.
b ISib is defined as the current at which second breakdown occurs at a specified collector voltage with the emitter'base junction
forward-biased for transistor operation in the active region.
C ESIb is defined as the energy at which second breakdown occurs under specified reverse-bias conditions. ES/b = 1/2LI2 where
Lis. series load or leakage inductance and I is the peak collector current.
10e COlLECTOR Cl.IRftEHT IICJ/SASECUItRENT (lSI" 10
i
.
~12.,
is 10 eASE CURRDlT IIeJ",oOmA
~ '00"
8
t
~
8
.
7., 300 m4
zoo ••
0.'
l
IL .. 6 8 2 • 6 e
2.'
O~OLL£CTOA_TO_£MITTER SATlJIt~;:ION VOLTAGE ~CE(IO'~2-;$~5501 ,
e4$E-TO-EMITTfJ! VOLTAGf; (VBEI-V
Fig. 5 - Typical statu ration-voltage

characteristics. Fig. 6 - Typical output characteristics. Fig. 7 - Typical input characteristics.
380 _____________________________________________________________________
BDY37A
Features
Hometaxial·Base, High·Current • High dissipation capability-250 W
Silicon N·P·N Transistor • B-A specification for h FE. VBE. & VCE(sat)
• VCEX-16D V min.
Rugged High-Voltage Devices for Applications
RCA-BDY37A is a hometaxial-base silicon put stages, dc·to-dc converters, inverters,

transistor intended for a wide variety of and solenOid (hammerj/relay driver ser-
high-voltage, high-current applications. vice. The BDY37A employs the popular
Typical applications include power- JEDEC TO·204MA steel hermetic
switching circuits, audio amplifiers, package.
series- and shunt-regulator driver and out-
JEDEC TO'204MA
(S.e dimensional outline "A".)
COLLECTOR·TO-SASE VOLTAGE .......... . VCSO 160 V
COLLECTOR·TO·EMITIER VOLT AGE:
With base open ........................ . VCEO 140 V
I I .I I
With reverse bias (VSE)of -1.5 V ........ . VCEX 160 V 200 TJJ;<"ZJ.c ,I
EMITIER·TO·BASE VOLTAGE ............. . 7 V
Ii!
, 'fffi
VEBO
I
COLLECTOR CURRENT:
~~c.~ II
Continuous ........................... .
Peak ................................. .
SASE CURRENT:
IC
ICM
16
30
A
A
100
.,
I' ('·••0< '.'OJ
Continuous ........................... .
Peak ................................. .
IS
ISM
4
15
A
A I
"
\
I~~ ~~ '\0"
~ -~"
-
At case temperatures up to 25 'c ......... .
At case temperatures above 25 'c ........ .
PT
250
Derate linearly to 200 'c
W 20
" . 10 4
, . ,,
10 5
, . , , "- ,
TEMPERATURE RANGE:
Storage & Operating (Junction) .......... . -65to +200 'C' Fig. 2 - Thermal-cycling rating chart.
COLLECTOR-TO-EMITTER VOLTAGE (VCE1'2V
At distances;. 1/32 in. (0.8 mm)
from case for 10 s max. . .............. . 230 ·C
~200f-+-+-H-'k_.t-/A1SE 1T~~PER1TuRE I'TCI)':5!'C _
~ 16of--I-+-H-I-->bH4-H--I--I-H-I--l
~~ '.
-----:
~ 1zof-r+",-,'-'H...K=-I---'t'<"-d+-+--++++--I
1&O~~~-r+Tr-r-T+~'~~-+++~
~ 40f-+-++4-1--+~~++--~'~~~++--I
E
0,01 ~ 0 I ~ I 45 6 8 10
COl.LECTOR CURRENT (lC)-A
"EM,nER VOCTAG' IV" ·2V
EM' 'RATURE
8 10 4
0.5
•I 1.5
6ASE-TO-EMITTER VOLTAGE {"eE)-V
2
COLLECTOR - TO- EMITTER VOLTAGE (VCEl-V

Fig. 1 ~ Maximum operating areas. Fig. 4 - Typical transfer characteristics.
_____________________________________________________________________ 361
BDY37A
ELECTRICAL CHARACTERISTICS, at Case Temperature (T cJ = 25·C
BDY37A
Vdc Adc
VCB VCE VEB VBE IC IE IB Min. M8X.
ICBO 140 a - 2 rnA
ICEX 140 -1.5 - 2 rnA
ICEXTC-150·C 140 -1.5 - 10 rnA
ICEO 120 a - 10 rnA
lEBO 7 a - 2 rnA
2 a8 15 60
hFE 4 168 7 -
VCEX(SUS) RBE =100 Q -1.5 0.1 160 - V
VCER(sus) RBE =100 Q 0.28 150 - V
VCEO(SUS) 0.28 a 140 - V
VBE 2 a8 - 2.2 V
VCE(sat)
a8 o.a - 1
V
168 3.2 - 2.5
IS/bb 100 2.5 - A
1-s nonrepetitive pulse
ES/b c -1.5 2.5 0.125 - J
=
L 40 rnH,RBE 100 Q =
IhfeJ f-50kHz 4 1 4 -
hfe f -1 kHz 4 1 40 -
ROJC - 0.7' ·C/W
8Pulsed, pulse duration =300 ~s, rep. rate =60 Hz, duty factor'; 2%.
blSlb is defined as the current at which second breakdown occurs at a specified collector voltage
with the emitler·base junction forward·biased for transistor operation In the active region,
CES/b is defined as the energy at which second breakdown occurs under specified reverse·bias con·
ditions. ES/b = Yo U 2 where L Is a series load or leakage inductance and I is the peak collector cur·
rent.
lOIS -COLLECTOR CURRENT Ie/BASE CURRENT Ie'l~
: II Y/
i
~12.~ CASETE~F>ERATUJE!TcL2J. J~t/
BASE CURRENT I .600 IlIA
OmA
, " / / ",,,,C
,
mA' ,
,
2
loomA
mA
.
50mA
, /I
o 0.5 I 1.5 Z 2.5
COLLECTOR-lO-EMITTER VOLTAGE
3 3,5
1Va'- ~2CS-19!156
0' ,
{f
. ., 2 . ., ,
BASE-TO-EMITTER VOLTAGE (VaE I-V
ftCS·r.'!l2.
Fig. 5 . Typical output characteristics. Fig. 6· Typical saturation-voltage Fig. 7· Typical input characteristics.
characteristics.
362 _____________________________________________________________________
POWER TRANSISTORS
BDY55, BDY56
Featules:
High-Current, High-Power, High-Spebd • Maximum operating area curves for dc
Silicon N-P-N Power Transistors and pulse operation
• Large-signal power amplilication
• Hlgh-current fsst switching
Devices for Switching and Amplifier TERMINAL DESIGNATIONS
Circuits In Industrial and Commercial
Applications
The RCA-BDY55 and BDY56 are epitaxial suited' for swltchlng-control amplifiers.
silicon n-p-n power transistors. They dif- power gates. switching regulators. con-
fer In voltage ratings and leakage-current: verters. and Inverters. Other recommend-
ed applications Include dc.,f amplifiers
The high current-handling capability of and power oscillators. These transistors
these transistors In conjunction with fast are supplied In the steel JEDEC TO- JEDEC TO-204MA
switching speeds make them especially 204MA hermetic package.
(See alm.nolonal oulllne "A".)

BDY55 BDY56
VCBO ........................................................ . 100 150 v
VCEO ............................. , ......................... . eo 120 v
VEBO ....................................................... . 7 V
15 A
5W
~~ ""'~~:!1~\~yif~PORTION
APPL
AND
ETlNG
DISSIPATION-LIMITED
AT CONSTANT PORTION
VOLTAGE
OF MAXIMUM-OPERATING
IC· ...... ··· .... ········· .. ······· .. ················· .. ····· ~~ ARE URVES.DO NOT DERATE TlIE SPECIFIED
lB· ........ · .. ····· ...... · .. ·· .. ·······• .. ·········· .. ·····,·· 7 A "'B

VAL FOR ICMAX.
!i~
Pr
TC '" 25'C ................................................. . 117 W ~~
Tstg.TJ ...................................................... . -65to +200 'C ~~IOO
~~
TL ~a75
~o
At distances .. 1/32 In. (0.8 mm) from seating plane
for10Smax................................................ . 230 'c ii
~b50
~~
U" "
50 75 100 125 I!() 175
CASE TEMPERATURE ITe )-·~2CS-20IU
200
Fig. 2-jDlsslpatlon derating curves for both

types.
OClO
·· ~... ....
c. ~J "
'.'"
~
~
· ; 11\\1'"~.~~
u
:>
I".. ~f4>
T~
·~ 1\ f'.. ~
~
u
..I' I~~·'
. . .T~
........ t--
10 '0'
. . . .. '0'
NUMBER OF THERMAL. CYCU.S
'0'
9ZCS-ZOISO
COLLECTOR-TO-EMITTER VOLTAGE(VCE)-V
92CM-32249
Fig. 3- Therma/-cycllng rating chart for both
Fig. 1-f,4ax/mum operating areas for BDY55 and BDY56. types.
___________________________________________________________________ 363
BDY55, BDY56
26-Q"....
ELECTRICAL CHARACTERISTICS, At eese Tempe,ature (TC)
.
::I COLLECTOR-rO-EMITTEfl VOLTAGE (VCEI-4V
CASE TEMPERATURE ITe 1- 25"C
Otherwise Specified , '0
CHARAC·
TEST CONDITIONS ",ITS
I
~ 80
~
~
70
/
,/
'"\ 1\
TERISTIC VOLTAGE CURRENT , .0
Vdc Adc BDY66 BDY58 UNITt 15 V \

~ 50
VCE VEa VaE Ic la Min MIx Min Max. ~~

. . .. . . .
40
30 0 - 0.7 - 0.5
- 30
ICEO
60 0 - - - 0.1 I
COLLECTOR CURRENT tIel- A
'10
100 -1.5 - 5 - - 9ZCS-:!IZ2.48
ICEV 150 -1.5 - - - 3 rnA

Fig. 4-·Typlcal galn-ilandwldth PfOfttft lor
At TC= 150·C
100 -1.5 - 30 - - both typa ••
150 -1.5 - - - 30
IESO 7 0 - 5 - 3 rnA
4 4- 20 70 20 70
hFE
4 10- 10 - 10 -
fy 4 1 10 - 10 - MHz
VCEo(susl b 0.2 0 60 - 120 -
VSE 4 4 - 1.8 - 1.8
V
VCE(satl
4 4 - 1.1 - 1.1
10 3.3 - 2.5 - 2.S
tON
VCC=SO V
S 1.0 - OS - O.S
Fig. 5-Typical transfer characteristics for
both types.
tOFF IS 1 =
VCC=50 V 5 1A - 2 - 2
".
IS2 = ,.~ COLLECTOR-lO-EMITTER VOLTAGE CVce)' 4 V
-O.SA § 100 I
II
R8JC 10 10 - 1.S - 1.S °CIW
~ - ~1\J~E -- '-T;-
'·21! -, ,
15
a Pulsed; pulse duration .. 350 I's, duty factor = 2%. ~
~ 5
V
f-:-; 1E"'~EP-
(TC
b CAUTION: The sustaining Yoltages VCEO(sus), MUST NOT be measured on a curve tracer. These
sustaining yoltages should be measured by means of the test circuit. ~ ~ I"'--
~
I --
.. . .. - ...
25 - -55
'\ -
g 0
nOI 0.1. 40
COLLECTOR CURRENT IIc)-A
Fig. 6- Typical de beta characteristics for

both types.
·'r---:f---"'~~/
~.J- ~~iE~!~R SUPPLY VOLTAGE {VCC'-30V
CASE TEMPERATURE(T C ) • 25- C

4-
'125 ,
ii
} 10-1
'00 "
··
W •
u
~
~
"
10
•'0
'1500
..
"0
.~
8 IBO
120
80
,
'0 10-2
16 20
202530~40 45 I. 4 8 12
COLLECTOR CURRENT (Ie I-A I12CS-3224'
COLLECTOR-la-EMITTER VOLTAGE {Veri-V BASE-lO-EMITTER VOlTAGE (VSEI-V
Fig. 9. - SWitching-time characteristics as a

Fig. 7- Typical output characteristics for both Fig. 8- Typical input characteristics for both function of col/ector current for both .
types. types. . types.
364 ________________________________________________________________________
BDY57A
Features:
High-Current, High-Speed • Maximum area-of-operation curves for
High-Power Silicon N-P-N de and pulse operiitfon -ISib limit
begins at 25 V
Transistor • Fast tum-on time-1-,..s aliC = 15 A
• High-current capability-
For Switching and Amplifier Applications in hFE' VcE<sal) measured at IC = 10 A
Industrial and Commercial Service
The RCA·BDY57A epitaxial silicon n·p·n switching circuits converters, inverters,

power transistor has high current and control circuits. Other recommended ap'
high power handling capability and fast plications include dc·rf amplifiers, and
switching speed. It is especially suitable power oscillators.
for switching·control amplifiers, power The BDY57A is supplied in a steel JEDEC
gates, switching regulators, power· TO·204MA hermetic package.
JEDEC TO-204MA
(Se. dlmenslonel outline "A".)

MAXIMUM RATINGS, Absolute·Maximum Values
VCBO· .. ·································· .. ··············· .. ·· . 120 V

vCEO(sus) ...................................................... . V
THERMAL FATIGUE INSPECTION
80
VEBO ························································· .. 9 V Pulsed Test:
~ ............................................................. . 25 A
IS ............................................................. . 6 A 20,000 cycles
PT "on"; 2 minutes at 56 watts PT
TC" 25"C ..................................................... . 175 W "off"; 1 minute at 56 watts PT
T c;> 25"C, derate linearly ........................................ . 1 WI"C TC = 125'C max.
Tstg,TJ ........................................................ . -65to 200 "C ATe = 50"C max.
TL T J 175'C max.
At distance;> 1132 in. (0.8 mm) from seating
plane for 10 s max ............................................... . 230 'C
NOTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES

ONLY TO THE DISSIPATION-LIMITED PORTION AND :IS/b
LIMITED PORTION Of MAXtlolUM-OPERAT1NG-AREA CURVES.
DO NOT DERATE THE SPECIFIED VALUE FOR re MAX.
100 125 150 175 200

CASE TEMPERATURE (T c1-·C
Fig. 2- Derating Curves.
CDLLECTOR-TO-EMITTER VOLTAGE (VeE j. -': V
Fig. 1-Maximum operating areas. 0.01 2 4660.1 Z 468 1

COLLECTOR CURRENT (IC}-A
IT C = 25°C).
Fig. 3- Typical dc beta characteristics.
________________________________________________________________ 365
BDY57A
ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) = 25DC unless otherwise
specified
TEST CONDITIONS
CHARACTERISTIC VOLTAGE CURRENT LIMITS UNITS
Vdc Adc
leBO 120· - 0.5 1
ICER
RBE = lOn, 80 - - 10 mA
TC = 100°C
lEBO -9 0 - - 2
V(BR)CBO 5' 120 - -

VCEO(sus)- 0.1' 0 80 - - V
V(BR)EBO
IE = 5 mA
0 9 - -
4 10' 20 - 60
hFE
4 20' - 15 -
TC= -30°C 4 10' 10 - -
VBE(sat) 10' 1 - 0.5 1.4
V
VCE(sat) 10' 1 - 1.4 2
fT f=10MHz 15 1 10 30 - MHz
tON td + tr VCC= 15 1.5 - 0.25 1

J1s
75 V
tOFF ts +tf 15 1.5 - 1 2
RIIJC - - 1 °CIW
• Vce value . * Pulsed; pulse duration ~300 1J,5. duty 'factor ~2%,
•.CAUTION: The sustaining voltage VCEO (sus) MUST NOT be measured on a curve tracer.
COUECTOR·TO-EMITTER VOLTAGE (VeEl-V

92cs-m14
Fig. 4- Typical input characteristics Fig. 5- Typical transfer characteristics. Fig. 6-Typical output characteristics.
H6 __________________________________________________________________
BDV58R
Features:
Silicon N·P·N Switching Transistor·
160 V
25 A
For Switching Applications in 175 W
Industrial and Commercial Equipment
RCA-BDY5BR is a silicon n-p-n power tran- pulse-width-modulated regulators, and a

sistor featuring fast switching speeds, variety of power switching circuits.
low saturation voltage, and high safe- The RCA·BDY5BR transistor is supplied in
operating-area (SOA) ratings. It is spec· a steel JEDEC TO-204MA hermetic
ially designed for converters, inverters, package. TERMINAL DEStGNATIONS

BDY58R
VCBO ' ......... . .. 250V JEDEC TO-204MA
VCEO········ .... . .. 160V
VCEX (See dimensional oulllne "A".)
VBE~ -1.5V ... .............. 250V
VEBO··········· . ..8V
IC .............. . .25A
ICM ··············· .50A
IB ............... . ... 8A
PT' NOTE"CURRENT DERATING AT CONSTANT VOLTAGE
At T C up to 25 0 • • • • • ............. 175W APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION
T J' T stg .......... . ....... - 65 to + 200 °c AND IS/b-LlMITED PORTION OF MAXIMUM-OPERATING

AREA-CURVES. 00 NOT DERATE tHE SPECIFIED VALUE
T L, fOR Ie MAX
At distances;> 1116 in. (1.58 mm) from case for 10 s max. .............. 235 °c
50 •.• ~
f,:!=:=.
25 50 75 ,00 125 150 175 200

CASE TEMPERATURE (TCI--C
Fig. 2· Dissipation and fSlb derating curve.
NUMBER OF THERMAL ClClES

COLLECTOR-TO- E!'-lITTER VOLTAGE (VeE )-V
92CM-321!52
Fig. 1· Maximum safe'operating areas (TC~25°C). Fig. 3· Thermal-cycling rating chart.
___________________________________________________________________ 367
BDY58R
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC)=25·C

8DY58R
Vde A de
VCE VeE IC 18 Min. Typ. Max.
VCB
ICBO = - - 0 - 0.1 1
200 rnA
leER RBE = 10 Q,
TC = 100·C
180 - - - - - 10 24S8 2 4S9 2468 2468
0.001 O.QI 0.1 I 10
lEBO 5 0 0.1 0.5 PULSE WID,TH (tpl - .

9ZCS-30397
VCEO(sus)D - - 0.2a - 160a - -

V(BRIEBO IE = 0.05 A - - 0 - 8 - - Fig. 4 - Typical thermal·response
characteristic.
V
VBE(sal) - - 10a 1 - 0.9 2
VCE(sal) - - 10a 1 - 0.2 1.4
hFE
4 - 108 - 20 - 60
4 - 20 a - - 20 -
TC= -30·C 4 - 10a - 10 - -
IT 15 - 1 - 10 48 - MHz
COLLECTOR-IO-EMITTER VOLTAGE --
Ion VCC - 15 1.5 - 0.3 1 0
400
(VeE'- 4 v
loft = 15 1.5 1.£ £ f.ls ~ 2 Ll

(lB1 = IB2) 75 V
lJE JCI~,J5"C
~
w
ReJC - - - - - - 1 ·C/W
~
100
TEMPELTURE
aPulsed, pulse duration = 300 ~s, duty factor" 2%.

2 • ........
~~ " 25~C
bCAUTION: Sustaining Voltage VCEO(sus) MUST NOT be measured on a curve tracer.

~=
4
2 -.lo.e ~
- r--..
"
I
fi' 10
I"
•
.
is
"
0.' " 2 4
10 " •
COLLECTOR CURRENT (leI - A
2
40
92CS-32151
Fig. 5· Typic!!' dc beta characteristics.
*g IS"IC /IO
I II I t.z~
CASE TEMPERATURE fTcl • 25·C
COLLECTOR -TO - EMITTER VOLTAGE (VeE) = 15 V
I
~ 2.4 FREQUENCY ~ 10 MHz
I II I III
1
~ ; I
~
~>
aJ.. I."
CASE TEMPERATURE (Tct o -40·C
I
I ~>
~Jo 0.'
f::3 SE'
PEAA,Uf\E rrc~
""le?,..~
rJ
V.;
~§
!::w
~
~.?..
Q
12 1/ ~~
~1 O.S I:--- - V V
V
,./
!
~ 0.' ~
Ift" e 1-- ~
~
~
g OA
/ 0 .•
..
125-C
8
10
COlLECTOR CURRENT(ICI-A
4 ••
100
0.2
2 4 . e I 2
COLLECTOR CURRENT (Ic1-A
4
10
2 4
60
COLLECTOR CURRENT (leI - A
92CS-~1"53
92CS-32153
Fig. 6· Typical collector·to-emitter saturation Fig. 7· Typical base·to·emitter saturation Fig. 8· Typical gain·bandwidth product.
Voltage characteristics. voltage as a function of collector
CUffent.
368 _____________________________________________________________________
BDY58R
;,.IOe
·
CASE TEMPERATURE (Tel .12S-C
Is-Ie IlO
I
.~
IS 1-1S 2 VCC· 15V
3,
~
~ -.....
"
~ l-- r-- I,
·•
~
~ I
--V
rt
,-
0
z
" b" I,
~
4
---
If
I,
0
in , ;"'"
~ - ..; '- r -
COLLECTOR-TO-EMITTER VOL.TAGE t "'CEI- II
92CS-31456
0.1
5 10
If
15 20
'.;OLLECTOR CURRENT t1cl- A
25
92CS-32154
30
"
0:: 0.1
0 5 10
--- I 20 25
COLLECTOR CURRENT (Icl- A
30 35
92CS-32155
Fig. 9 . Typical output characteristics.

Fig. 10· Typical saturated·switching·time Fig. 11· Typical switching·time characteristics
characteristics as a function of at TC= 125"C as a function of
col/ector current. col/ector current.
" 6 8 10 4 6 8 100 400

COLL£CTOR - TO -BASE VOLTAGE (Veal-V OR
EMITTER-TO-BASE VOLTAGE (VEBI-V
92CS-3L459
Fig. 12· Typical common·base input (CiboJ of

output (Cobo i capacitance
characteristics.
________________________________________ ~--------------------------_369
BDY71
Hometaxial-Base, Medium-Power Features:

• Maximum safe-area-of-operation curves for de ahd pulse
Silicon N-P-N Transistor' •
operation
VCEV(luII '" 90 V min
.
For Intermediate-Power Applications in Industrial and Commercial Equipment • Low saturation voltage: VCE(sat) = 1.0 V at Ie C 0.5 A
Applications:
The RCA·BOY71 is a hometaxiaf·base silicon n-p-n tran- • Power switching circuits
sistor intended for a wide variety of medium- to high-power
• Series- and shunt-regulator driver ~nd output stages TERMINAL DESIGNATIONS
applications. It is supplied in the JEDEC TO-66 hermetic
package. • Hi'gh.fidelity amplifiers
C
~
MAXI MUM RATI NGS. Absolute-Maximum Values:
BDY71
COLLECTOR·TO·BASE VOLTAGE ....•..•..••...•.••.••.•....•..• VCBO 90 v
With base cpen ..•................................... VCEO 55 v "n~,.
With external base-to-emitter resistance (RSEI = 1000 VCER(sUS 60 v
With base reverse-biased (VBE =,'.5 V) .........•.•.• VCEV(suS) 90 v JEDEC TO-66
EMITTER·TO-BASE VOLTAGE .•......•.•••. V.eBO V
CONTINUOUS COLLECTOR CURRENT .•..••.
'e A
(See dimensional outline "N".)
CONTINUOUS BASE CURRENT.
TRANSISTOR DISSIPATION: '.
PT
A
At case temperature up to 2s<'C ...••.. 29 w

At temperatures above 25°C ..•••.. Derale linearlv to 200°C
TEMPERATURE RANGE:
Storage & Operating (Junction) .••....••.•••.••.••.•.....•...•....•.
PIN TEMPERATURE lOuring Soldering):
At distance ~ 1/32 in. (0.8 mm) from seating plane for 10 $ max •••.•••.•.
-65 to 200
235
·e
·e .,
;
4 8 810' 2 .... t06

NUMBER OF THERMAL. CYCL.ES
Fig. 2 - Thermal·cycling rating chart.
COL.L.ECTOR-lO-EMtTTER VOLTAGE (VcEt. 4V

[100
2
~ 80
::~~
lr~/~
,< .. c t',
I~r-
r-
t-;~'<'''<-
r--;
~4( ~~
~
!
~ 20
,,~
i!
g 0
, 0.01 0.1
COllECTOR CURRENT IICI-A
1.0
.
COLLECTOR-TO-EMtTTER VOLTAGE (VeE} ·4V

CASE TEMF£RATUAE (Tcl-25" C
,
ii
,
~
" V
I~ o'lll-1--H-l+-+--H-tt--t-"""t-Hl
h/~~-r++~I~~rm
COLLECTOR-TO-EMITTER VOLTAGE IVCEI-V
92CS-2~969
Fig. 1 - Maximum operating areas for BD Y71. •g

10 4 6 8102
COLLECTOR CURRENT l1:cl-1I'IA
Fig. 4 - Typical gain·bandwidth product.
370~-------------- ________________________________________________
_____________________________________________________ POWERTRANSISTORS
BDY71
ELECTRICAL CHARACTERISTICS, At Case Temperature (T d = 25"C Un/tIllS Ot/rttrwi",5ptJcified

Vdc Aile BOV7'
VCE V BE IC IB Min. ,*".
With base open ICED 30 0 - 0.5 mA
With _-emitter ICEX

junction reverse-biased 90 -1.5 - 1 mA
at T C = 15O"C ICE X 90 -1.5 - 6 mA
Emitter-Cutoff Current IEaO -7 0 - 1 mA
Sustaining Voltage:
With base open VCEO(·u,1 0.1" 0 55 - V
eminer resistance VCER(·':'·I 0.1" 60 - V
(RaEI = lOOn
DC Forward-Current hFE 4 3" 5 -

Transfer Ratio 4 0.5" ao 200
Coliector·to·Emitter VCE(·at! 0.5" 0.05" - 1 V

Saturation Voltage 3" I" - 6
Base-ta-Emitter Voltage VaE 4 0.5 - 1.7 V
Common·Emitter, Small,Signal,
Short·Circuit, Forward
Current Transfer Ratio f hfe 4 0.1 0.03 - MHz
Cutolf Frequency
Gain-Bandwidth Product: 'T 0.2 BOO - kHz

1= 0.4 MHz
Common·Emitter, .
SmaIl·Signal, Short-Circuit
Forward Current Transfer h'e 4 0.1 25 -
Ratio:
1=1 kHz
Forward-Bias Second Break-

down Colhlctor Current:
t = '-s nonrepetitive
ISlb 55 525 - mA
Thermal Resistance:
Junction·to-Case RUC 6.3 - ·CIW
"flu....: P..... dur8tion • 300"... dutY factor'" 1-"'.
Fig. 5 - Typical transfer characteristics. Fig. 6 - Typical input characteristics. Fig. 7 - Typical output characteristics.
__________________________________________________________________ 371
POW~~T~~N~~TORS __ ~ ____________________________________________________
BDY90, BDY91, BDY92
High-Speed Silicon N-P-N Features

• Maximum operating area curves
Power Transistors for dc and pulse operation
Devices for Switching and Amplifier TERMINAL DESIGNATIONS

Circuits in Industrial and Commercial
Applications
The RCA-BDY90. BDY91. and BDY92 are suited for switching-control amplifiers.
epitaxial silicon n-p-n power transistors. power gates. switching regulators. con-
They differ in breakdown-voltage ratings. verters. and inverters. Other recommended
leakage-current. and dc-beta values. applications include dc-r! amplifiers and
The high current-handling capability of power oscillators. These transistors are
these tran~istors in conjunction with fast supplied in the steel JEDEC TO-204MA JEDEC TO-204MA
switching speeds make them especially hermetic package.
(See dlmenolonal oulline "A",)

BDY90 BDY91 BDY92
VCBO ................................................ .. 120 100 80 v
VCEX(sus)
V BE = -1.5 V ......................................... . 120 100 80 v
VCEO(sus) ..•....................................•...•.. 100 80 60 v
VEBO ................................................. . 6 V
IC .................................................... .. 10 A
ICM ................................................... . 15 A
IB ..................................................... . 2 A
PT
T C :5 75°C ........................................... .. 40 w
T C :5 25°C. VCE > 28 V .............. " .............. .. _ _ _ See Fig. 2 _ _ __
T C > 25°C. VCE > 28 V ." .... " ...................... . _ _ See Figs. 1 & 2 CASE TEMPERATURE (T c) - •. ~
9ZCS-33600
TJ. Tstg .............................................. .. _ _ _ -65 to 175 _ _ __ °C Fig. 2 - Dissipation derating curves
TL for all types.
At distance ~ 1/32 in. (0.8 mm) from
I~ VcC~V
seating plane for 10 s max. 175 °C ~ T,,-25-C
=
o
'25i--,---t-t-H--t---j--H-I
~
a: roo'i--+---t-t-H--t---j--,H-I
~
~ 75,bo-"F=-=I~t-!.-dr--.:...:::-~'-+--1-+-1-
~ I -~
~"oi--+---t-t-H--tl_-
..... P'-<t--h
~ ~~
;: 25r---+---t-j-H--j---j--IH-j
~
« 6 8 I 6 a 10
I COllECTOR CURRENT rIel - A
92C5-33601
Fig. 3 - Typical dc beta characteristics

for all types.
000 "cE- SV
f. SMHI
TJ-2:S e c
~ 125
~
~ 000
&
~ 7.
S ... V I'---
13 00
25
0.0
2 .,. o
COLLECTOR CURRENT (le)-A
2 .,, 00
COLLECTOR-TO-EMtTTER VOLTAGE (VCE)-V 92CM-33!599

Fig. 4 - Typical gain-bandwidth product
Fig. 1 - Maximum operating areas for all types. for all types.
372 ____ ~ _______________________________________________________________
_ _ _ _ _ _ _~--------------------- POWER TRANSISTORS
BDY90, BDY91, BDY92
ELECTRICAL CHARACTERISTICS, at Case Temperature (T cl =25 0 C

Test Conditions Limits
Charac- Voltage Current
BDY90 BDY91 BDY92
terlstlc V dc A dc Units
ICEX.
120 -1.5 - 3 - - -- --
100 -1.5 - - - 3 rnA
T C = 150°C 80 -1.5 - - - - - 3
2 1a 35 - 35 - 35 -
hFE 5 5a 30 120 30 120 30 120 40 60 120 160 200
JUNCTION TEMPERATURE (TJI-oC 92CS-33603
5 10a 20 - 20 - 20 -
Fig.5 - Typical collector leakage current
Ihfe l 14 14 14
f=5 MHz
5 0.5
Typ.
- Typ. - Typ.
- vs. junction temperature for a/J types.
Vr.FO(sus)b 0.2 0 100 - 80 - 60 -

VCEX(SUS)D -1.5 0.2 0 120 - 100 - 80 - V
vEBO
IE=0.05A 0 6 - 6 - 6 -
0,5 TJ" 25" C
5a 0.5 - 0.5 - 0.5 - 0.5
o. 1-~~'~"_0,-_+-j-4+_-+__f-+-~
VCE(sal) V
10 a 1 - 1.5 - 1.5 - 1.0
VBE(sal)
5a 0.5 - 1.2 - 1.2 - 1.2
V
10a 1 - 1.5 - 1.5 - 1.5
ION
VCC=30 V
5 0.5 c - 0.35 - 0.35 - 0.35
Is I1 s
VCC=30 V
5 0.5 c - 1.3 - 1.3 - 1.3
If
VCC=30 V
5 0.5 c - 0.2 - 0.2 - 0.2
10
RIIJC 10 10 - 2.5 - 2.5 - 2.5 °C/W COLLECTOR CURRENT (lc) -
Fig.6 - Typical collector-to-emitter satu-
A nCS.3:5604
ration voltage characteristics as a

a Pulsed: pulse duration = 300 !1s, duty factor:5 2%. c IB1 = -IB2
function of collector current
b CAUTION: The sustaining voltage VCEO(sus) and VCEX MUST NOT be measured on a curve tracer. for all types.
aa
Ie olo 1.5 TJ- 25~ C --+-H-+--j-j-+-++-
I, ~.IO
~
I,
z
a
~;>o
~I
~I
~ ~
* nsf--+--+-H-+--jf--+-+-+-I
!::o.Z...
" ~
~ 00 B _ O.SA _
JUNCTION TEMPERATURE {TJI-·C 92CS-3360~ 10 JUNCTION TEMPERArURE (TJ1- ·c ncs- 33607

COLLECTOR CURRENT tIcl- A 92CS-33606
Fig.7 - Typical collector-Io-emilter salu- Fig.8 - Typical base-to-emitter satu-
ration voltage characteristics as a ration voltage characteristics as a Fig.9 - Typical base-to-emil/er satu-
function of junction temperature function of col/ector current ration voltage characteristics as a
for alf types. for all types. function of junction temperature.
________________________________________________________________________ 373
BFT19,BFT19A,BFT19B
FlNltures:
High-Voltage Silicon P-N-P Transistors • Maximum safe-area-of-operation curves
For High-Speed Switching and Linear-Amplifier VeDO ' -400 V max. (BFT19B): -300 V ma.. (BFT19AI:
Applications in Military. Industrial and Commercial Equipment -ZOO V mIX. (BFT191
VCEQlsu,)= -350 V max. (BFT19BI: -250 V mIX. IBFT19AI:
RCA·BFT19. BFT19A, and BFT19B are silicon p-n-p tran· Typical applications include high-voltage differential and -150 V mIX. (BFT191
sistors with high breakdown voltages, high frequency response, operational amplifiers; high-voltage inverters, and high-voltage,
and fast switching speeds. These transistors differ in their low-current switching and series regulators.
voltage ratings. Thev are supplied in the JEDEC TO·39 TERMINAL DESIGNATIONS
hermetic package.
MAXIMUM RATINGS. Absolute-Maximum Values: BFT19
,f3".~
BFT19A BFT19B
COLLECTOR·TO·SASE VOLTAGE VCSO -200 -300 -400 V
With base open .. VCEO(sus) -150 -250 -350 V
With external base-ta-emitter resistance (RBEI:: 100 Q., VCERI'u,) -200 -300 -400 V
EMITIER-TO-SASE VOLTAGE VESO -5 -5 -5 V
COLLECTOR CURRENT (Continuous) .. IC -1 -1 -1 A t2CS-27!512
BASE CU R RENT (Continuous I IS -0.5 -0.5 -0.5 A
JEDEC TO-39
At case temperatures up to 2S"C W
(See dimensional outline "C n _)
At case temperatures above 2S"C .. Defel. linnrly 10 200°c
At ambient temperatures up to 2SoC 1 1 W
At ambient temperatures above 2SoC Derate linearly at 5.7 mWfC
TEMPERATURE RANGE:
Storage and Operating (Junction) "-"""--65 to 200----.. 'c COll!:CTa..TO·EMlTTEIt VOt.TAGf; IYCE) ~.IO Y
PIN TEMPERATURE (During Soldering): ,~
'c 1--'"-
~9G
,....
~ III
./
~ 1IJ
~
i
: I-"'
~,,,).
,.<
rr
c r- ' - ...~
i: f-- Q>"'~~
I-r I
..J..l..+t-
11 .. <
I-?"f
II l~
~ "
, ,I I , .. ,.-"II ,
COLLECTOR CUltIlEMT (Ie)-aI.
... ,l\ .,
Fig. 2 - Typical de beta characteristics_
..: COlLECTOR. T()'E.IIITTtIt VOlT ACE (Va) • ·10 V
E
u
I . CASE TbPEltATURf (Tel. we
H
~ "
I-
Z ~40 /
ILl
Q:
Q: L
:>
()
Q:
o
I-
I~
! .. . / ./
...-" . ..
()
ILl
-'
,
-' -IIO , '.\000
o
() C<IU.!CTOItCUnBITI'cl_'"
Fig_ 3 '- Typical gain-bandwidth product.
-10 6 8-100 -ISO 2-25~3~

92CS-22544
Fig. 1- Maximum operating areas for all types_ Fig. -4 - Typical input characteristics.
374
POWER TRANSISTORS
BFT19, BFT19A, BFT19B

ELECTRICAL CHARACTERISTICS, At C- Temperarure fTCI = 25'C
CHARACTERISTIC SYMBOL VOLTAGE CURRENT BFT19 BFTlgA BFTl9B UNITS
Vdc mA
V CB V CE V EB Ic IE IB Min. Max. Min. Max. Min. Max.
-100 0 -100
With emitter open ICBO -200 0 -100 .A
-JOO 0 -100
Emitter-Cutoff Current lEBO -5 -100 -100 -100 .A
-10 -10 20 20 20
DC Forward.current
hFE -10 -30 25 25 25
Transfer Ratio
-10 -50 20 20 20
Voltage
With base open VCEO(susl -10 -1500 -250" -3500 V
With external base-to.emitter

VCERlsus} -10 -2()()l1 -300' -40()0 V
resistance (Rae) = 100 n
Base-to-Emitter Saturation Voltage VSE(sati -30 -3 -1.8 -1.8 -l.B V
-10 -1 -1 -1 -1
Collector-ta-Emitter Saturation Voltage VCE,sat} V
-30 -3 -2.5 -2.5 -2.5
Common-Emitter. Small-Signal, Short-
Circuit, forward-Curren. Transfer hf• -10 -5 25 25 25
Ratio (at 1 kHz)
Magnitude of Common-Emitter. Small.
Signal, Short-Circuit Forward-
-10 -30
Current Transfer Ihf·1
Ratio (at 5 MHzl
Common·Base. Short-Circuit, Input
C ib -5 75 75 75 pF
Capacitance (at 1 MHz)
Output Capacitance (at 1 MHz) Cob -10 15 15 15 pF
Second-Breakdown-- :Collector Current;
With base forward biased ISlb -100 -50 -50 -50 rnA
Thermal Resistance:
(junction-Io-Casel R8JC 35 35 35 °C/W
• CAUTION: The suuaining\loltages VCEOlsus) a.nd VCERlsus) MUST NOT be measured on a curve tracer.
PUL:E IlU;'tATlOt4'}01'-1
~~~~~~~I: :~:L~'c:6~;AGE "CCI.-')Ov~l!ml!mi!l!!l
II CAse lo,IP[RATURE ITel'

lC 1 IS'10 tel·IeZ.
_10 .100 .110 I

~Hl±J±!;~;Jiliillql
COLLECTOR CURRENT I1CI- rn A
'00
COLLECTOI· TO-EMlnta YDl. TAeI: 'Ya) - Y COLLECTOR CURRENT lIe I-rnA
Fig. 5 - Typical output characteristics. Fig. 6 - Typical collector-to-emitter Fig. 7 - Typical turn-on time characteristics_
saturation voltage.
P1JLSE OUAATlO.,,30,...
REPETITION RATE' 100M,
COlLECTOR SuPfOLY V(lLTAGE (Vee)'
CASE TEMPERATURE ITC1'2~·C
Ic/~e "0 ta,-t az
.. eo
COLLECTOR CUftA[NT I1CI-IIIA
COLLECTOR CURRENT ttcl-rnA
Fig. 8 ~ Typical storage-time characteristic. Fig. 9 - Typical transfer characteristics. Fig. 1a - Typical fall· time characteristic.
375
BFT28,BFT28A,BfT28B,BFT28C
High-Voltage Silicon P-N-P Transistors Features:

• Maximum aafHrea-of-operation curves
For High·Speed Switching and Linear·Amplifier
VCBO - -150 V max. IBFT 28); -200 V max. IBFT28A);
Applications in Military, Industrial and Commercial Equipment -250 V max. 'IBFT 28 B); -300 V max. IBFT28C)
VCEOI,u,1 =-100 V max. IBFT 28); -150 V max. IBFT28A);
The RCA·BFT28, BFT28A, BFT28B and BFT28C are silicon These transistors differ primarily in their voltage ratings.
-200 V max. IBFT28B); -250 V max. IBFT28C)
p-n-p transistors with high breakdown voltages, high frequency Typical applications include high-voltage differential and
response, and fast switching speeds. They are supplied in the operational amplifiers; high-voltage inverters; and high-voltage,
JEDEC TO-39 hermetic package. low-current switching and series regulators.
MAXIMUM RATINGS. Absolute-Maximum V,alues:
,fj".",
BFT28 BFT28A BFT28B BFT28C
COLLECTOA·TO·BASE VOLTAGE VCBO -150 -200 -250 -JOO v
With external base-to-emiuer resistance (R BE ' = 100 n VCERhusi -150 -200 -250 -300 v
With base open .............. . VCEOhuJ) -100 -150 -200 -250 v
EMITTER-TO-BASE VOLTAGE V EBO -, -, -, -, V 92CS-2751Z
COLLECTOR CURRENT
'C -1 -1 -1 -1 A
BASE CURRENT ..
TRANSISTOR DISSIPATION: '. -0.5 -0.5 -0,5 -0.5 A JEOEC TO·3D
At ca~ temperatures up to 25 0 C
At calle temperatufas above 25 C ,
• 5
Derate hnearlv to 200°C
w
(See dimensional outline "C".)
At ambient temperatures up to 50°C 1
At ambient temperatures above SOO C , Derate linearlv at 5,7 5.7 5.7 5.7
TEMPERATURE RANGE:
Storage and Operating (Junction) • - - - -65 to +200 - - - - 'c
LEAD TEMPERATURE (D~ting soldering):
At distance >- 1/32 in. (0.8 mm) from seating plane for lOs max. 255 'c
..
I
COLLECTO" eU""EHT Ucl-rnA
Fig. 2 - Typical turn·on time characteristic

U for all types.
!:!
z -100
f-
w
a:
a:
::J
U
-10
,0 80 100 110
COLLECTOR CURRENT (tel-rnA
COLLECTOR-TO-EMITTER VOLTAGE (VCE' - V

Fig. 3 - Typical storage-time characteristic
Fig. 1 - Maximum safe operating areas. for all types.
376 ________________________________________________________________________
POWER TRANSISTORS
BFT28, BFT28A,BFT28B, BfT2SC

ELECTRICAL CHARACTERISTICS, At C&e TemperarunJ ITC)" 25'C

VOLTAGE CURRENT
CHARACTERISTIC SYMBOL BFT28 BFTZllA BFT289 BFT2SC UNITS
V dc mAdc
VCB VCE VEe Ic IB Min. Max. Min. Max. Min. Max. Min. fib><.
ICBO
-50 - -I - - - - - -
With emitter open -75 - - - -I - - - - /J A
-150 - - - - - -5 - -5
Emitter-Cutoff Current lEBO -4 0 - -100 - -100 - -100 - -leo /JA
DC Forward-Current
Transfer Ratio hFE -10 _laC 20 - 20 - 20 - 20 -
Voltage:
With base open VCEO(sus) -10 a -100" - -150" - -200" - -250" - V

VCER(sus) -10 -150" - -200" - -250" - -300" - V
resistance (RBE) = l00~
Base-ta-Emitter Saturation Voltage VBE(sat) -30 c -3 - -1.5 - -1.5 - -1.5 - , -1.5 V
Collector-ta-Emitter Saturation
VCE(sat) _10c -I - -0.6 - -0.6 - -5 - -5 V
Voltage
Common-Emitter, Small·Signal,
Short-Circuit, Forward-Current
Transfer Ratio:
I = I kHz hie -10 -5 25 - 25 - 25 - 25 -
Small·Signal. Short·Circuit
Forward-Current Transfer Ratio:
1= 5 MHz Ihlei -10 -30 5 - 5 - 5 - 5 -
Common-Base, Short-Circuit.
Input Capacitance:
I = I MHz CiL -5 0 - 75 - 75 - 75 - 75 pF
Output Capacitance:
I = I MHz Cob -10 - 15 - 15 - 15 - 15 pF
Forward·Bias, Second-Breakdown
Collector Current:
0.4·5 non-repetitive pulse IS/bb -80 -62.5 - -62.5 - -62.5 - -62.5 - rnA
Thermal Resistance:
Junction-to-Case ROJC - 35 - 35 - 35 - 35 CIW
·CAUTlON: The sustaining voltages VCEO(sus) and VCER(sus) MUST NOT be measured on a curve Iracer.
bl S/b is defined as the current at which second breakdown occurs at a specified collector voltage.
cPulsed. pulse duration = 300 /JS; duty lactor .;; 2%.
COLLECTOR. TO·EIITTER VOLT loGE ~VCE) COLLECTOR.TO.ElITTERV1JLUG:;:IVCE)·_IOV

CAlETEilPERATUREITCl o 291C
~ .~~--~~~~~~~~-r~~-H
:r. /
~
~.~-++R-+~H+~~~
~
g '~-r~~++--~-r~~-+--+-rti
!
~ to ........ /
.. , -"
.. ,_'00
CCLlECTOR CURR&lT (lCI-_/o.
.. -,,... 1 I
-,
II .,-" 1
COLLECTOR CURREHT (lCl-_"

I I I
-'ro
20 40 <0
COLL'[eTOR CURRENT (tel-iliA
".
Fig. 4 - Typical gain·bandwidth product for Fig. 5 - Typical dc beta characteristics Fig. 6 - Typical fall-time characteristic
all types. for all types. for all types.
377
BFT28,BFT28A,BFT28B,BFT28C
_..•
IIAU:-TO-EMITTU VOLTAGE (VilE) _

.all types.
v COLLECTOR. TO-EMITTER VOLTAGE {'ICE) _

all types .
v COLLECTOR CUFlFlENT {Icl-mA
Fig. 9 - Typical callector-to-emitter

saturation voltage for aI/ types.
378 __________________________________________________________----------_
BU126, BU133
High-Voltage, Power-Switching Silicon N-P-N Transistors
Features:
TV Colour/Monochrome Receiver Power
Supplies _900 and 1100 Deflection Angles
• Hermetic steel package -
JEDECTO-3
The RCA-BU 126 and BU 133 are silicon TERMINAL DESIGNATIONS
epitaxial-collector n-p-n power switching
C
transistors intended for use in switched-
mode power supplies of 90 0 and 1100
colour and black-and-white TV receivers_
These devices are hermetically sealed in a
'~
steel JEDEC TO-3 package_
JEDECTO-3
(See dimensional oulllne "A"_)
BU126 eUI33
V CES
750 750 V
V CEV
veE = -1.5 V .............................. 750 750 V
VCEO(susl .. !............................... 300 250 V
vEBO·····~································ 6 6 V
~........................................ 3 A
ICM .••....•......•..••..••.........•..... 6 A
~ ....................................... . A
PT
~w.C ................................ ~ eo w
Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate linearly to 2000C
TJ.Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -- -&5 to 200 - - °c
TL
At distances;;> 1/32 in. (0.8 mm) from seating plane for 105 max. --- 235 _ _ _ 0c
Fig. 1 - Maximum operating areas for BU126, BU133.
ELECTRICAL CHARACTERISTICS, At Case Temperature ITci = 25°C Unless Otherwise Specified

VOLTAGE CURRENT
SYMBOL BU126 BU133 UNITS
V de A de
ICES 750 a - 500 - 500 IlA

TC - 125°C 750 a - 2 - 2 rnA
lEBO -6 - 5 - 5 rnA
hFE 5 la 15 60 15 80
VCEO(SUS) 0.1· a 300b - 250b - V
VBE(sat) 4a 1 - 1.5 - 1.5 V
2.5a 0.25 - 10 - 10
VCE(sat) V
4a ·1 - 5 - 5
ISlb 40 2 - 2 - V
t = 1 5 nonrep. 200 50 - 50 - rnA
fT 10 0.2 3.5 typo 3.5 typo MHz
ts
VCC=50V 2.5 0.25 c 1.5typ. 2.4 1.5 typo 2.4 IlS
tf
VCC=50Vd 2.5 0.25 c 0.5 typo 0.9 0.5typ. 0.9 IlS
ROJC - 2.18 - 2.18 °CIW
• Pulsed: pulse duration = 300 IlS, rep. rate = 50 Hz, duty factor = 2%
b CAUTION: The sustaining voltage VCEG(sus) MUST NOT be measured on a curve tracer.
c IBl = IB2
d Fall-time characteristics measured in a typical switched-mode power supply show an average value of 0.16115.
________________________ ~--------------------------------------~9
BU323, BU323A
10-Ampere N-P-N Monolithic Darlington Power Transistors

350,400 Volts, 175 Watts
Gain of 150 at 6 A
The BU323 and BU323A are monolithic n-p-n silicon breakdown capability; their high gain makes it possible for
Darlington transistors designed for automotive electronic them to be driven directly from integrated circuits.
power applications.. . The BU323 and BU323A are supplied in the JEDEC TO-
These devices provide good forward and reverse second- 204MA hermetic steel package.
Features:
• High voltage breakdown
Applications:
• Power switching
• Automotive ignition
JEDEC TO-204MA
10
COLLECTOR";rO-EMITTER VOLTAGE (VCE)-V
92CM-340~3
Fig. 1 - Maximum operating areas for both types.

BU323 BU323A
VC80 .•.•••••...........•••.••••.•...•....•••..•....... 500 600 V
VCER(susl
R 8E z 100n ............................................ . 400 475 V
VCEO(susl •.•.••••••••••••••••.•..•••..••••••••••••.••.•. 350 400 V
V E80 ••..••.•..•....•.•.•.•.........•....•.•.........•. 8 8 V
iC .•..•........•••..•...•........••.•••.•.•.••.•••...•• 10 10 A
'CM .. , •....•..•••••....•..•.••.•.••..•.•............••. 16 16 A
'8 .................................................... . 3 A
PT
T C :S25°C ............................................. . 175 175 W
TC >25°C ••••••••••••••.••••.••••••••••.••.••••••••••. See Fig. 3
Tstg ' T J ................................................ . -65 to +200 °c
TL
At distances 2: 1/8 in. (3.17 mm) from case
for 10 s max. 235 °c
380 ________________________________________________________________________
________________________________ ~ ________________________ POWERTRANSISTORS
BU323, BU323A
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) 25°C unless otherwise specified

VOLTAGE CURRENT
CHARACTERISTIC BU323 BU323A UNITS
Vdc Adc
ICER 400 - 1 - -
RSE=100 n 475 - - - 1
IESO 6 0 40 40 rnA
ICSO
500" - 1 - -
600b - - - 1
VCER(sus)
RSE=100n 4 400 - 475 - V
L=500 "H
VCEO(sUS) 0.28 0 350 - 400 -
6 3~ 300 - 300 -
hFE 6 6a 150 2000 150 2000
6 108 50 - 50 -
38 0.06 8 - 1.5 - 1.5
VCE(S8t) 6a 0.128 - 1.7 - 1.7
V
lOa 0.30 8 - 2.7 - 2.7
TC=-40°C 68 0.128 - 2.0 - 2.0
68 0.12 - 2.2 - 2.2
VSE(sat)
108 0.30 - 3 - 3
V
TC=-40° C 68 0.12 - 2.4 - 2.4
VSE(On) 6 lO a - 2.5 - 2.5
VF 108 3.5 3.5
Cob
1=100 kHz
10b - 350 - 350 pF
IC 2 U2 (See Fig. 10) 550 ~

550 - rnJ
Is IS,-IS2 12c 6 0.3 - 15 - 15
"s
If IS1=IS2 12" 6 0.3 15 15
Ihle l
5 1 10 - 10 -
f=1 MHz
ISlb 3.5 - 3.5 - A
50
t= 1 s. nonrep.
ROJC - 1 - 1 °C/W
8Pulsed: Pulse duralion=300 I'S, duty factor= 1.8%.
bVCS value.
cVCC value.
,---------,
I I
~ '~~~.H*~-+-r+H-+-++n
~
::
I I " 1\ "
I I
I I
I
L _ _ _ _ _ _ _ _ _ .-J
I
" 6 8 10 " Z "BIO~ 2 " 6 8 106
9ZCS·28591
Fig. 2-Schemalic diagram for both types. Fig. 3-Dissipalion derating curve for both types. Fig. 4- Thermal-cycling rating chart for both types.
381
BU323,BU323A
i .,,
104 COLLECTOR-lO-EMITTER VOLTAGE (VCE)·3V
r-r--
:" ,10'
f----- t::::".
~ :h.\1.~.c.
~ ,
; :I------c/'r-
~,-- :::"
"/-,,,0'"
10'
,.0. 0
~
I , "/
,/ ./
g
10
0.1
, .,, I
,
COLLECTOR CURffENT (IC)-A
, , , 10 I l5
BASE-TO-EMITTER VOLTAGE (VeE I-v ,COLLECTOR-TQ-EMITTER VOLTAGE ('o/eEI-V
'J2C5-28~45
Fig. 5- Typical DC beta characteristics for both Fig. 6- Typical input characteristics for both types. Fig. 7- Typical output characteristics for both types.
types.
INDUCTIVE LOAD
~
<I IImH
VCC-16 Vd, o-----t-----'VIIIr-.JVYY'~---..,
~Tlf-
ovJlIL
COLLECTOR-lO-EMITTER VOLTAGE (VeE I-v
---.j 50"~ 21l
470
Fig. 8- Typical output characteristics for both types.
Vz - 350 V(BU3231
400 VC9U323A)
ATIZ -20mA
T, TO BE SELECTED SUCH THAT Ie REACHES 10 Adc

BEFORE SWITCH-OFF
NOTE FIGURE 10 SPECIFIES ENERGY HANDLING

CAPABILITIES FOR AN AUTOMOTIVE IGNITION
CIRCUIT.
92CM-340~4
Fig. 1O-Ignition test circuit.
BASE-lO-EMITTER VOLTAGE (YBEl-V
Fig. 9- Typical transf.r characteristics for both types.
382 ____________________~_____________________________________________
BUW40, BUW40A, BUW40B
1-A SWib:hMiIf VERSAWATT Transistors

F.atur.a: .
• 100% High-Temperature Tested for 125°0
Parameters
High-Voltage N-P-N Types for Off-Line Power Supplies and • Fast Switching Speed
Other High-Voltage SWitching Applications • High Voltage Ratings:
"VCEX=350 V to 450 V
The RCA-BUW40, BUW40A, and BUW40B are essential to the design of industrial • Low VCE(sat) at IC=1 A
Switch Max series of silicon n-p-n power high-power switching circuits. Switching • VERSA WA TT package
transistors feature high-voltage capability, times, including inductive turn-off time,
fast switching speeds, and low saturation and saturation voltages are tested at 125° C,
voltages, together with hig h safe- as well as at 25°0, to provide information
operating-area (SOA) ratings. They are necessery for worst-case design.
Appllcatlona:
specially designed for use in off-line power The ROA-BUW40, BUW40A, and BUW40B
supplies and are also well suited for use in a • Off-Line Power Supplies
series transistors are supplied In the • High-Voltage Inverters
wide range of Inverter or converter circuits
JEDEC TO-220AB VERSAWATT plastic • Switching Regulators
and pulse-width-modulated regulators.
package.
are l00-percent tested for parameters that
MAXIMUM RATINGS, Absolute-Maximum Values: B

C I
(FLANGE) I
BUW40 BUW40A BUW40B
0:
VCER,ReE"l00 C 350 400 450 V i
. vCEV BOTTOM VIEW
E
VeE=-1.5V .............................•..... 450 550 650 V
VCE)«Clamped)
VeE=-1.5V ..................•................. 350 400 450 V (See dimensional oulline "5".)
VCEO ...............•........................... 300 350 400 V
VEeo····~·······················.·· ............ . S V
IC(sal) •............•............•...•............ A
IC········································ .• · .. ·• 1 A
ICM .••...................•.....•...•..•......... 2 A
NOTE: CURRENT DERATING AT CONSTANT VOLTAGE
Ie .•..........•....•..............•....•......... 0.6 A APPLIES ONLY TO THE 0I5SIPATION-LIMITED PORTION
OF MAXIMUM-OPERATI'ICi-AREA CURVES 00
Pr NOT OERATE THE SPEClflEO VALUE fOR Ie MAX.
TC up to 25'C ...•...............•.•........... 40 W
TC above 25'C, derale linearly ......•..........• 0.32 W/'C
TSIg,TJ .•..........•...................•........ - - - -8510 150 _ _ _ _ ·C
TL
At dlslance~ lIS" In. (3.17 mm) from
Haling plane for 10 s max. . .•..•.........••.. 235 ·C
Z!5 50 7!5 100 125 I~ 175 200

CASE TEMPERATURE ITc1- "C
Fig. 2 - Derating c.urve for all types .
.
1
Ii 8 104
4 6 2 2
92CM-33865
Fig. 3 - Thermal-cycling rating chart for all
Fig. f - Maximum operating areas for all types. types.
383
aUW40, BUW40A, BUW40B

100,
~ :
BUW40 BUW40A BUW40B UNITS
TERISTIC Vdc Adc
vCElvBE IC ]IB Mln·1M• x• Min. 1M... Mln·IM...
TC=25°C
450 1.5 - 0.1
ICEV 550 -1.5 - - - 0.1 - - mA
650 -1.S - - - - - 0.1
IESO -8 0 - 2 - 2 - 2 001
4 6 8 01
PULSE WIDTH (lpl- S

4 6 8 I
VCEO(sus)b 0.2. 0 300 - 350 - 400 - Fig. 4 • Typical thermal· response characteris-
VCE(sat).. 1· 0.2 - 1.0 - 1.0 1.0 V tics for aillypes.
VSE(sat) 1· 0.2 - 1.2 - 1.2 1.2
3 0.3- 20 100 20 100 20 100
hFE 10 50
3 1- 10 50 10 50
VCEX b
(Clamped ES/b) -5 1 0.18 3S0 - 400 - 450 - V
L=4S0pH.
RSS=SO Cl
ISlb 100 0.4 O.S 0.5 O.S s
Ih'ell-1 MHz 10 0.2 10 50 10 50 10 SO
'T 10 0.2 10 SO 10 50 10 SO MHz
Cobo 1-0.1 MHz 10C 20 60 20 60 20 60 pF
td a 1 0.2 - O.OS - 0.05 - O.OS
0.01 " til '0.1 2 " •• I
COLLECTOR CURRENT (Xc I-A
2 . . . "0
utl-n••a
tra 1 0.2 - 0.2 - 0.2 - 0.2
tsd 1 0.28 - 2.S - 2.S - 2.S Fig. 5 • Typical dc beta characterlsllcs for a//
tId 1 0.2· - 0.4 - 0.4 - 0.4
ps
types.
te
VCC=200V.
L=4S0pH.
RC=200 Cl
1 0.28 - 0.4 - 0.4 - 0.4
Collector clamped
toVCEX
TC=125°C
450 -1.S - 1 - - - -
ICEV S50 -1.S - - - 1 - - mA
650 -1.S - - - - - 1
VCE(sat) 1- 0.2 - 2 - 2 - 2 V
Ira 1 0.2 - O.S - 0.5 - 0.5 O.t I
COLLECTOR CURRENT IICI-A 92C$-33684
tsd 1 0.241 - 4.S - 4.5 - 4.5 Fig. 6 • Typlcaf collector-to-emltter saturation
t,d 1 0.2- - 1.3 - 1.3 - 1.3 voltage as a function of co//ector
Ic
VCC=2ooV, ps
L=4S0pH.
RC=200Cl
1 0.241 - 1.3 - 1.3 - 1.3
Collector clamped
to VCEX
RSJC
RSJA
=
• Pulsed: pulse duration 300 /IS. duty factor S; 2%. CVcs value.
bCAUTION: The sustaining voltage VCEO(SUS) dvCC = 200 V. tp = 20 /IS.
and VCEX MUST NOT be measured on a curve tracer. 81S1 = -IS2· I
COLLECTOR CURRENT {ICI-A
Fig. 7 - Typical bllse-to-emlttllr 8aturallon

voltage as II function of co/fector
currant for a// types.
384 ________________________________________________________________________
POWER TRANSISTORS
,
COLLECTOR CURRENT (ICI-A 9ZCS- ~368B
Fig. 9 - Typical saturated switching time 9ZC:S-3368'

Fig. 8 - Typical base-to-emltter voltage as a Fig. 10 - Typical saturated-swltchlng-tlme
function of collector current for all characteristics as a function of collector
types. current for all types.
.!u
~
~
, ~----------------,
~O.B
aO.6 CLAMPED
lieD: RATING_
~04
t;
~O, VCEX
~
RATING
COLLECTOR-lQ-EMITTER VOLTAGE
10% IC (PEAK)
CASE TEMPERATURE IT C }_·c 92CS-33690
Fig. 11 - Typical saturated-swltchlng-time Fig. 12 - Maximum operating conditions for 92CS-30389Rl
characteristics as a function of case switching between saturation and Fig. 13 - Oscilloscope display for measurement
temperature for all types. cutoff. of clamped Induction switching time
(tel·
Ie RI Rz VCEX CLAMP
l'A I t~ II~o 1 CLAMPED YCf)(RATING\
QI,02 " 2N6354

IBI --.---------..,.X" 90 %
03 : 2N3762
Q4,05, A \0 %
0.0011'1' 06,07 = CA3725 QUAD o - - - - - - - - - ------
TRANSISTOR ld ~ A-8
ARRAY t,· 8-C
t.~X-V
* THIS CONNECTION tfmV-Z

tTRANSITtON E X-W
SHOULD BE MADE AS
COLLECTOR OF
'4n
** KELVIN (SENSING)
CONNECTIONS
NOTE. BATTERY SYMBOLS Vee, VSI'VS 2 '
92CS-30458
T 50 /,F
V8tCLAMP) INDICATE RIGOROUSLY FILTERED
TO ACCOMODATE THE FAST Ir AND If TIMES
'0.:JL~ AND HIGH CURRENTS PRESENT IN THE CIRCUIT. Fig. 15 - Phase relationship between Input and
o l.L,oe s 50n =
VB' NOTE SWI CLOSED FOR Ir. Is. If. SWI OPEN FOR Ie output currents showing reference
M'N ADJ. FOR 102 points for speCification of switching
FREQ= 500 Hz
times.
________________________________________________________________________ 385
COLLECTOR-TO-BASE VOLTAGE "'-cel-V OR

EMITTER-lO-BASE'VOLTAGE IVEal-V
Fig. 16 - Typical output characterlatlcs for all 92cs--nUI
types. Fig. 17 - Typical common-ba.e Input or output
capacltanca characterl.tlca as a
function of col/actor-to-bue voltage or
emltter-ta-ba.e voltage.
386---------------------------------------------------------------------
------------------______________________________________ POWERTRANSISTORS
5-A SwltchMax Power Transistors Features:

• 100% High-Temperature Tested for
1250 C Parameters
High Voltage N-P-N Types for Off-Line Power Supplies
and Other High-Voltage Switching Applications
• High Voltage Ratings:
VCEX = 350 V to 450 V
The RCA-BUW41, BUW41A and BUW41B are 100-per-cent tested for parameters that • Low VCE[satj at IC = 5 A
SwitchMax series of silicon n-p-n power are essential to the design of industrial • VERSA WA TT PACKAGE
transistors feature high-voltage capability, high-power switching circuits. Switching
fast switching speeds, and low saturation times, including inductive turn-off time,
voltages, together with high safe-oper- and saturation voltages are tested at 1250 C,
ating-area (SOA) ratings. They are spe- as well as at 25 0 C, to provide information
cially designed for use in off-line power necessary for worst-case design.
supplies and are also well suited for use in a Applications
The BUW41 , BUW41A and BUW41B series
wide range of inverter or converter circuits • Off-Line Power
transistors are supplied in JEDEC TO-
and pulse-width-modulated regulators. Supplies
220AB (RCA VERSAWATT) plastic pack-
These high-voltage, high-speed transistors age. • High-Voltage Inverters
MAXIMUM RATINGS, Absolute-Maximum Values: • Switching Regulators
BUW41 BUW41A BUW41B
VCER, RBE = 100n ................................... 350 400 450 V TERMINAL DESIGNATIONS
VCEV
VBE = -1.5 V ...................................... 450
e
550 650 V B
VCEX (clamped) c
VBE = -1.5 V .........•...•....................... 350 (FLANGEI
400 450 V c
VCEO ····················•······..................... 300 350 400 V
VEBO ······································· ..•...... - - - - 8 V
IC(sat) .............................................. . 5 A BOTTOM VIEW
E
IC················································· .. . 8 A 92CS~Z7!U9
ICM ............................•..................... 10 A
lB·························.···.···.······ ........... . 4 A JEDEC TO-220AB
PT
Tcupt025·C .............•............•............ 100 W (See dimensional oulllne "S".)
T C above 25· C, derate linearly .........•..........•.. 0.8 WI"C
Tstg , TJ ............................................. . -65 to 150 ·C
TL
At distance 2! 1/8 in. (3.17 mm) from
sealing plane for 10 s max .....•..•...........•....•. 235 ·C
, ,
CASE TEMPERATURE (Tc1--C 92CS-32218
Fig.2 - Dissipation and 'Slb derating curves

for all types.
.
10O,
•r-I--I.tJ <:,
"T UIIAX.)-IOOW
1-f--~7~ -",
2 t";[ ~. I
10
r-!p. ...~ "'.
~A
'10",
:Fl
4~€
2;
.
~
~~%
~~
_\l~~...
I'\)if,
·L\..~O.
, ~ i\
'0'
, .~ '" . . , . 10'
NUMBER OF THERMAL CYCI.£S
\I\J"J~
10'
Flg.3 - Thermal-cycling chart for all

Flg.1 - Maximum operating areas for all types [T C = 25· CJ. types.
----------------------------------------------------______________ 387
BUW41 , BUW41A, BUW41B

ELECTRICAL CHARACTERISTICS 1I 18- I CI5
Test Conditions Limite

z
c
~
. Tc·- 4O•C
Te· 125• C
Characteristic Voltage Current BUW41 BUW41A BUW41B Unite
~14
.J Tc ·25-C
~
VcIc Adc
I I I ~j
vCElvBE IC liB Min. Max. Min. Max. Min. Max.
!It ~
TC = 25°C 'w
~! -c. ~.o
:\.....
450 -1.5 - 0.1 - - - - ,~
~~OJ <"",
~ ~\1.CJ
ICEV 550 -1.5 - - - 0.1 - - mA f:l • ~t.""
~"." <~
650 -.5 ~
- - - - 0.1 :!
8 •
IIEBO
VCEO(susl b
-8 0
0.2a O'
-
300 -
2 -
350
2 -
400
2
V COLLECTOR CURRENT IIer-A
. 10
3 5a 10 40 10 40 10 40 Fig.6 - Typical col/ector-to-emitter saturation

hFE
voltage as a function of col/ector
VBE(sall 5- 1 - 1.6 - 1.6 - 1.6 currant for all types.
VCE(satl
5a 1 - 1 - 1 - 1
8a 4 - 2 - 2 - 2
V
VCEX b
(Clamped ES/bl -5 5 1e 350 - 400 - 450 -
L = 170 IIH
RBB = 5 Q -5 8 3e 200 - 250 - 300 -
ISlb 25 4 0.5 0.5 0.5 s
Ihld f=5 MHz 10 0.2 3 12 3 12 3 12
fT 10 0.2 15 60 15 60 15 60 MHz
C obo f=0.1 MHz 10C 50 300 50 300 50 300 pF
Idd 5 1 - 0.1 - 0.1 - 0.1
I[d 5 1 - 0.5 - 0.5 - 0.5
10
ts d 5 1e - 2.5 - 2.5 - 2.5 Fig.7 - Typical base-to-emitter saturation

Ifd 5 1e 0.4 - 0.4 - 0.4 currant for aI/ types.
Ic liS
VCC=125 V. " COLLECTOR -TO-EMITTER
VOLTAGE (VeE'- 3Y
I
L=170 IIH.
RC = 25 n
5 1e - 0.4 - 0.4 - 0.4
Collector clamped
to VCEX
2 .. 6 •
I COLLECTOR CURRENT {lei-A 92CS-299'~ 10
Fig.S - Typical base-to-emitter voltage as a
function of col/ector currant for aI/
types.
200 COLL ECTOR - TO -E MITTER
2 VOLTAGE (VCE' -;, v
2
~
:100
! ., ·-
;;I
1
...- i . -..
./ ~ ~
:~ ;~4
~~
~!
c'"
.
V
'" ~e
~
'i ,
~
~
--~
I ·v ~
~
CASE TEMPERATURE CTCI
1 1 1 -I t '-."., ~
·· . . . .Ll
!i! 10
......
8
0.1
0.001
. ... . . .. . ... .
0.01 0.1
PULSE WIDTH II p l-s
.. .t.
10
0.1
I
I
COLLECTOR CURRENT (ZC)-A
10
COLLECTOR-TO-EMITTER VOLTAGE IYcEI-:V nC5-2""
Fig.4 - Typical thermal-response chara- Fig.5 - Typical dc beta characteristics for aI/ Fig.9 - Typical output characteristics
teristic lor aI/ types. types. for aI/ types.
388----------------------------------------------------------------~---
ELECTRICAL CHARACTERISTICS Conllnued

Characteristic Voltage Current BUW41 BUW41A BUW41B Units
V dc A dc
VCE!VBE IC ! IB Min.! Max. Min.! Max. Min.! Max.
TC-125 ° C
450 -1.5 - 1 - - - -
ICEV 550 -1.5 - - - 1 - - rnA
650 -1.5 - - - - - 1
VCE(sat) 5a 1 - 2 - 2 - 2 V
t rd 5 1 - 0.8 - 0.8 - 0.8 CASE TEMPERATURE ITc )_·c
t sd 5 1e - 4 - 4 - 4
Fig.14 - Typical saturated switching time
tfd 5 1e - 0.8 - 0.8 - 0.8 characteristics as a function of case
JiS temperature for all types.
tc
VCC; 125 V.
L;170 JiH.
5 1e - 0.8 - 0.8 - 0.8
Rc; 25 n
Collector clamped
to VCEX
a: .... 104 CASE TEMPERATURE {TC1·2~·C

1.25 rC/W o. , FREQUENCY (11-' MHz
70 °C/W r~ 4
]1 .1
2
p.-~ibO
B~
~ Z 103
apulsed: pulse duration::;; 300115, duty factor ::::;2%.
bCAUTION: The sustaining vollage V CEO!sus) and
VCEX MUST NOT be measured on a curve Iracer.
eVCs';alue.
dVCC=12S V. Ip=20 /-IS.
e1S1= -IS 2 ·
n:r---.
!;~
.'
2": 6102
2
!~
"
~i
:,
2:
coo.
-
I
8~ 10
, , ,, 10
, , , ,I , , , ,
10 2 10 3
COLLECTOR-TO-BASE VOLTAGE IVCB)-V OR
EMITTER-TO-BASE VOLTAGE {VEB)-V
Fig.1S - Typical common-base input or output

capacitance characteristics as a
function of collector-to-base
voltage or emitter-la-base
voltage for all types.
COL. LECTOR CURRENT (IC)-A COLLECTOR CURRENT IIC)-A ,Z:CS-29988RI
Fig. 10 - Typical saturated switching time Fig.ll - Typical saturated switching time 8\-----,
characteristics for all types. characteristics for all typas. VCEORATING
""7
"z'6
t:J
I
V 'OOV
.
!Z51-----
~4
:>
u
c: 3 I CLAMPED "
~ Tcs125-C I VCEX RATING"" .
[;lz
..J I
..J
01
u
OL-----~----~--
92C5-3045~
,
. COLLECTOR CURRENT IIcl-A
Fig. 16 - Maximum operating conditions for
Fig. 12 - Typical saturated switching time Fig.13 - Typical saturated switching time switching between saturation
characteristics for a/l types. characteristics for all types. and cutoff.
_____________________________________________________________________ 389
BUW41 , BUW41A, BUW41B
10"" Ie I PEAK)
92C$-3Q389RI

of clamped induction switching
time [tel.
Ie R1 R V CLAMP
6 A 16 n 15 n ct.AMtED v RATING
8A &n &n VCEO-100V
QI. 02 • 2N8354
03 • 2N3762
Q4,05.
O.OOII'F 06,07 • CA3725 OUAD
TRANSISTOR
ARRAY.
* THIS CONNECTION
SHOULD BE MADE AS
COLLECTOR OF
O.OOSI'F TRANSISTOR UNDER TEST
24n
** KELVIN (SENSING)
CONNECTIONS
NOTE: BATTERY SYMBOLS Vee t VBI • VS2'
2g::rL~
VB(CLAMP) INDICATE RIGOROUSLY FILTERED
TO ACCOMODATE THE FAST t, AND " TIMES
1..l. 20pS son -
va2 NOTE: SWI CLOSED FOR tr I t. I ft. SWI OPEN FOR tc.
MIN ADJ FOR IS2
FREQ- 1500Hz 92CM-30458
Fig. 18 - Circuit fo,measurlng switching times.
tcI-A-8
A 10% t,-a-c
t,·x-v
If·Y-Z
'TRANSITION .. X-W
FROM9O'IG. 1e, TO~IB2
MUST BE LESS THAN 0.3,.•.
9ZCS-304t18
Fig.19 - Phase relationship between input

and output currents showing reference
paints for specification of
switchi,!g times.
390 _____________________________________________________________________
POWER TRANSISTORS
BUW64A, BUW64B, BUW64C
High-Current, Silicon N-P-N Features:

VERSAWATT Transistors • Fast switching speed at temperatures up to
125°C
Switching Applications • Low VeE!sat)
RCA-BUW64A, BUW64B, and BUW64C epi- modulated regulators and a variety of power • VERSAWATT plastic package
taxial-base silicon n-p-n power transistors switching circuits.
feature fast switching speeds, low
saturation voltages, and high safe-operating- The BUW64A, BUW64B and BUW64C tran- B
area (SO A) ratings. They are specially de- sistors are supplied in the JEDEC TO-220AB c
signed for converters, inverters, pulse-width- (RCA VERSAWATT) plastic packages.
(FLANGE)
o
BOTTOM VIEW
E E
C
JEDEC TO-220AB
BUW64A BUW64B BUW64C (See dimensional outline "S"_)
V CEV
V BE =-1.5V 140 160 180 V
V CEO ' 90 110 130 V
V EBO 7 v
Iclsat) 5 5 4 A
IC' A
ICM 10 A
IB . 5 A
PT
T C up to 25° C . . . . 50 W
T C above 25° C, derate linearly 0.4 wtc
T stg , T J -65 to 150 °C
TL
At distance ~ 118 in. (3.16 mm) from seating
plane for 10 s max, . 235 °c 50 75 100 125 150 175 200
CASE TEMf>ERATUAE (T C J_·C S2CS-3t8J7
Fig. 1 - Dissipation and I Sib derating curves for

al/ types.
COLLECTOR-TO-EMITTER VOL TAGE(VCE)- V

92CS-3194!5
Fig. 2 - Maximum operating areas for all types Fig. 3 - Maximum operating areas for al/ types
ITe ~ 2Soel. ITe ~ 1000 el.
391
POWERTRANSISTORS __________~--------------------------------------------
ELECTRICAL CHARACTERISTICS, at Case Temperature TC = 25°C Unless Otherwise
Specified
TERISTIC Vde Ade BUW64A BUW64B BUW64C UNITS
VCE VBE IC IB Min. Max. Min. Max. Min. M8x.
140 -1.5 - 100 - - - -

ICEV 160 -1.5 - - - 100 - - p.A
180 -1.5 - - - - - 100
140 -1.5 - 1 - - - - 0.001 2 '0.01 t .. Ii '0,1 2 .. e I 2 .. '10
TC= 125°C 160 -1.5 - - - 1 - - PULSE WIDTH (1,)-1 12CS-Sln.
180 -1.5 - - - - - 1 mA Fig. 4 - Typical thermal·rssponsa charactarl.tic

for all types.
lEBO -7 0 - 100 - 100 - 100 p.A
VCEO(sus)b ·~.01a 0 90 - 110 - 130 - V
.. COLLECTOR-ro-r::r. VOLTA1GE (VCE I'"2V
2 0.2a 30 - 30 - 30 -
hFE 2 48 - - - - 20 - ,
,J. ~~
'~
2 sa 20 - 20 - - - ~ CASE TEMPERATURE
--"CJ~c5·c
VBE(sat)
4a
sa
0.4
0.5
-
-
-
-
1.5
-
-
-
1.5
-
-
-
1.4
-
;;1
i
$ ·v
.
,
-
J
I,
I,. ' \ \
4a 0.4 - - - 0.7 V
VCE(sat) 58 0.5 -
-
0.8 -
-
0.8 -
-
- ~ , K '\.\\
ISib 20 2.5
78 0.7
1
1.5
- 1
1.5
- 1
1.5
- s
0
i. ,"
. .. ..
10
g
Ihfe l 10 0.5 10 40 10 40 10 40 0.1
, I
2
10
,
f= 5 MHz COLLECTOR CURRENT I rcl-A
92tS-J'8S9
.fT 10 0.5 50 200 50 200 50 200 MHz Fig. 5 - Typical de beta characteristics for all
. types.
Cobo 10e 50 150 50 150 50 150 pF
f=O.l MHz
tdd -4
4 0.4 - - - - - 0.1
5 0.5 - ·0.1 - 0.1 -' -
t rd -4
4 0.4 - - - - - 0.25
5 0.5 - 0.25 - 0.25 - - p.s
tsd -4
4 0.4e - - - - - 1
5 0.5e - 1 - 1 - -
tp -4
4 0.4e - - - - - 0.5
5 0.5e - 0.5 - 0.5 - -
RoJC 4 5 - 2.5 .- 2.5 - 2.5 °CIW
0.2 0.4 0.6 I 1.2 1.4 1.6

a Pulsed: pulse duration = 300 "s, duty facto, <;2%. C VCB value. COlLECTOO-TO-EMITTER SATURATION VOL.TAGE [VCE(satU-V
. b CAUTION: The sustaining voltage VCEOlsusl MUST NOT d Vee. 70 V. tp ~ 20 " • 92CS-31840
be measured on B curve tracer. Fig. 6 - Typical collecto,.to-11mitter saturation

8 1B, e - IB2 ·
voltage characteristics for all ty~es.
1a- 1c/1O
.·
CASE TEMPERATURE I TC 1- 25·C
10 COLLECTOR· TO- EMITTER VOLTAGE (Yce)-IOY
.& 3!5 FREQUENCY 1t).5MHt
..
1
u
H
·, t&
~
I /'11
·
~ ·
I
r---I-!
~ ·
~FffI
,r---J:
0.1
I;;
r J
~
2. COLLECTOR-TO-EMrTTER VOLlAGE {VCEI-V

0.6 0.8 I 1.2
COLLECTOR CURRENT (:r cl-A 9iCS-318"'2 92C9-31843
Fig. 7 - Typical bBse-to-emitter saturation Fig. 8 - Typical small'signal forward-current tran.fer ratio
Fig. 9 - Typical output characteristics for all types.
voltage characteristic for all types. charecteristic forall typas (f - 5 MHz!.
392
CASE TEMPERATURE (TC1oZS"C 0.8 CASE TEMPERATURE lTe j-12S"C

Ie • Ie/lC • Iel • Ie,
.Ie·leIlC,IBI"Ia,
Vec'lO". Ipo 20,.s
!. Vee '70'1. 'p
'20,.5
;:0.6
.~
z
~ 0.2
II
II
::i
3 4 5 6 7
COLLECTOR CURRENT tICI-A
92<:1.'11 •• " 2 :3 4 5
COLLECTOR CURRENT (Ic1- A
6 7 10 • 6 8102 ~ 4 6 8 105
COLLECTOR-TO-BASE VOLTAGE (VCB1-V OR
EMITTER-TO-BASE VOLTAGE (VE.B1-V 92CS-318.6
Fig. 70 - Tvpical saturafed-$w;tching-timllcharsc- Fig. 11 - Tvpical s8turated-swirching-time charac- Fig. 12 - Typical common-base input (Cibo ) or
teristics as a function o!collectorcurr6nt teristics as a function collector current at output (Cabo) capacitance characteristic
for a/l type. ITC - 25 CI. for a/l types ITC = 125 Ci. for all types.
RC·15-20n,IOW
NON INO
01, Q2 = 2N6354
Q3 " 2N3762 A 10%
Q4,Q5,
06,07 '" CA3725 QUAD
TRANSISTOR
DEVICE ARRAY.
UNDER Vee· .=.+
TEST
IN914
70 V - * THIS CONNECTION
SHOULD BE MADE AS
2.2 K CLOSE AS POSSIBLE TO
COLLECTOR OF .
0.005 iJ-F TRANSISTOR UNDER TEST
24 !l
•• .. * KELVIN SENSING
CONNECTION . 'd"'A-B !s-x-v 92CS-30381RI
I r - 8-C tr .. V-z
NOTE. BATTERY SYMBOLS VCC. VBI' VB2' Itr1nsition - X-W
~501'F VS(CLAMPl INDICATE RIGOROUSLY FILTERED
FROM 90% 18, TO 90% 182 MUST
2g::.rL~
BE lESS THAN 0.5 ~ •.
LL- 20 "5 50 !l =
VB2 92CM-J1847 Fig. 14 - Phase relationship between input and
MIN
ADJ FOR IS2 output currents showing reference
FAEO: 500 Hz.
points for specification of switching
Fig. 13 - Circuit for measuing switching times. times.
393
BUX10A
High-Current, High-Power, High-Speed Features:

VCEO --125 V
SiliCon N-P-N Power Transistor IC - - 25A
Pr --150W
The RCA-BUX10A is an epitaxial silicon cuits, such as converters, inverters, sWit-

n-p-n transistor having high-voltage and . ching regulators, and sWitching-control
amplifiers. TERMINAL DESIGNATIONS
high-current capabilities and featuring
fast-switching speed at low saturation The RCA-BUX10A is supplied in a steel
voltage. It Is especially suitable for con- JEDEC TO-204MA hermetic package.
trol amplifiers and power-switching cir-

BUX10A JEDEC TO·204MA
VCBO ....................................................... . 170 v (See dimensional ouiline "A".)
VCER
RBE = 10012 ............................................... . 160 v
VCEO ....................................................... . 125 V
VCEX .
VBE=-1.5V .............................................. . 170 V THERMAL FATIGUE INSPECTION
VEBO' ...................................................... . 7 V Pulsed test:
IC········· .. ··········· .. ·· .. ··· .. ········· .... ·· .. ·········. 25 A 20,000 cycles
ICM ......................................................... . 30 A "on": 2 minutes at 56 Watts Pr
IB ........................................................... . 5 A "off": 1 m in ute at 0 Watts Pr
Pr TC = 125'C max.
TC .. 25'C .................................................. . 150 W LI TC = 50'C max.
TC> 25'C derate linearly ..................................... . 0.86 W/'C TJ = 175'Cmax.
Tstg,TJ ...................................................... . -65to +200 ,'c
TJ
At distances ~ 1/32 In. (0.8 mm) from seating plane
forl0smax ................ ·................................ . 235 'C NOTE:CURRENT DERATING AT CONSTANT VOLTAGE
APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION
AND IS/b-LlMITEO PORTION OF MAXIMUM-OPERATING
AREA-CURVES. DO NOT DERATE THE SPECIFIED VALUE
~ FOR Ie MAX
~
~
~
100
75
u
50
;:
~
25 50 75 100 125 150 175 200

CASE TEMPERATURE !Tcl_QC
Fig. 2-0eratlng curves for 'Slb and

dissipation.
COLLECTOR-TO EMITTER VOLTAGE jVCE j':3 V
240
200
!z-w
!tk'60 ~--\
c&C -
a~
ijl: 120 - - ..¢-~&
(\"
"
~~ -<~.'<) .)'f
~:i: 80
g~ "C.~ V
'0
~ ;5~
V
6 B 10 6 8100 2 6 8 ,000 =-+-
, , ," , ,
COLLECTOR - TO- EMITTER VOLTAGE (VCE )-V 0,01
"
COLLECTOR CURRENT Gc1-A
"
92CM-32232
Fig, I-Maximum safe-operating areas ITc = 25·C). Fig. 3-Typical dc beta characterIstics.
394 ____________________________________________ ~ __________________________

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
BUX10A
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 25·C

CHARACTERISTIC VOLTAGE CURRENT aUX10A
UNITS
Vdc Adc
VCE VaE Ic la Min. Typ. Max.
ICEO 125 0 - - 5 rnA
V(BR)EBO
0 7 - - V
IE = 50 rnA
iEBO -5 0 - - 1 rnA
Fig. 4- Typical input characteristics.
VCEO(sus)b 0.2- 0 125 - -
V
VCER(sus)b
RBE =
100 Q
0.2- 160 - -
hFE
2 10 20 - 70
4 20 10 - -
VBE(sat) 20& 2 - 1.5 2
V
VCE(sat)
10& 1 - 0.3 0.6
20& 2 - 0.7 1.5
fy
f = 10 MHz 10 2 50 - - MHz
COlLECTOR-lO-EMITTER VOLTAGE lVCE)-V
iSIb
t =
1s, nonrepetitive
25 6 - - A
92CS-I$6!1ZRI
Fig. 5- Typical output characteristics.

tON 20 2 - 1 1.5
ts IB1 = IB2 VCE = 20 2 - 0.6 1.2 ~s
30 V
tf iB1 = iB2 20 2 - 0.15 0.2
R9JC - - 1.17 ·CIW
_ Pulsed; pulse duration = 300 "s, duty factor'" 2 'Io.
b CAUTION: The sustaining voltages VCEO(SUS) and VCER(SUS) MUST NOT be measured on a curve
tracer.
Fig. 6- Typical transfer characteristics.
,.
COLLECTOR CURRENT {Ic)-A COLLECTOR CURRENT ( Ic)·A
92CS-32U5
Fig. 7-Typical base-to-emitter saturation Fig. 8-Typical col/ector·to-emitter saturation Fig. 9-Typlcal switching time
voltage characteristics. voltage characteristics. characteristics.
____ ~ _________________________________________ =~--395

BUX11, BUX11N
Features:
High-Current, High-Power, High-Speed BUX11N
BUX11
Silicon N-P-N Power Transistors VCEO - - 200 V 160 V
IC 20 A 20A
The RCA-BUX11 and -BUX11N are converters, inverters, switching Pr - - 150 W 150 W
epitaxial-base silicon n-p-n transistors regulators, and switching-control
having high-voltage and high-current amplifiers.
capabilities and featuring fast switching The RCA-BUX11 and -BUX11N are sup- TERMINAL DESIGNATIONS
speed at low saturation voltage. They are plied in a steel JEDEC TO-204MA
especially suitable for control amplifiers hermetic package.
and power-switching circuits, such as

BUX11 BUX11N
VCBO·· .. ····· .. ··· ...... ········ .. · .. ·· .... · .... ·· 250 220 v JEDEC TO·204MA
VCER
RBE = 1002 .................................... .. 240 200 v (See dimensional outline "An.)
VCEO· .. · .. ·· .. ··· .... ······· .. ·· .... · .. ·· .... ··· .. 200 160 V
VCEX
VBE = -1.5V ................................... . 250 220 v NOTE:CURRENT DERATING AT CONSTANT VOLTAGE
VEBO······· .. ······ .. ········ .. ········· ......... . 7 7 V APPLIES ONj..Y TO, THE DISSIPATION-LIMITED PORTION
0
AND IS/b-LlMITEO PORTION OF MAXIMUM-OPERATING
IC················································· 20 20 A AREA-CURVES. DO NOT DERATE THE SPECIFIED VALUE-
ICM .............................................. .. 25 25 A i~ fOR, Ie MAX.
'B······;······························ ........... . 4 5 A :s~

1
P-r
TC" 25'C .............•.......................... 150 150 W
~~
w~
TC> 25'C derale linearly ........................... . 0.86 0.86 WI'C ~~ ,00
Tstg,TJ ..................•.........•............... -6510 +200 -6510 +200 'C ~~ 15

Tl
At distances;' 1132 In. (0.8 mm) from seating plane ~;
Q~
50
for 10amax..................................... . 235 235 ·C "Q

25
25 50 75 100 125 !50 175 200

CASE TEMPERATURE (Tcl-Oc
Fig. 1-Derating curves for 'Slb and dissipation.
10 100
COLLECTOR - TO- EMITTER VOLTAGE (VCEI'-V
92CM- 32269
Fig. 2-Maximum safe-operating areas for BUX11 (Tc = 25·C). Fig. 3-Maxlmum safe-operatlng areas for BUX11N (TC = 25·C).
396 _____________________________________________________________________
BUX11, BUX11N
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) ,

otherwise specified - ·
TEST CONDITIONS LIMITS ·
IOOt--~
."
"'~At.
"
VOLTAGE
CHARACTERISTIC Vdc
CURRENT
Adc SUX11 BUX11N UNITS
'I~
6 1 ~4'".'<
VCE VSE IC IS Min. Max. Min. Max. · .'
\~D. ~ ......
'" l""""."
ICEO
160 0 -
-
1.5
-
-
-
- ·
"if K 'it .~
%
t"-
.. . . .,
130
250 -1.5
0
- 1.5 -
1.5
-
· • • 10 6 III IO~
NUMBER OF THERMAL CYCL.ES

10'
ICSX
220 -1.5 - - - 1.5 Fig. 4- Thermal·cycling chart for both types.
ICEX 250 -1.5 - 6 - - mA
TC = 125°C 220 -1:5 - - - 6
lEBO -5 - 1 - 1
VCEO(sus)8 0.2b 200 - 160 -
V(BR)EBO V
0 7 - 7 -
IE = 50mA
2 6b 20 60 - -
hFE
4 12b 10 - - -
2 8b - - 20 60
4 15b - - 10 -
VBE(sat)
12b 1.5 - 1.5 - -
15b 1.88 - - - 1.8
COL.L.ECTOR-lO-EMITTER VOL.TAGE IVCE) - v 92CS-'14"
6D 0.6 -_. 0.6 Fig. 5- Typical output characteristics for both

types.
VCE(sat)
12b 1.5 1.5 - - V
ab 0.8 - - - 0.6
1sb 1.88 - - - 1.5 400
CQUEerQR-fO-EMITTER VOL.TAGE
IVcE,"4V
ISlb 140 0.15 - 0.15 . - A , J I I

tp = 15 nonrep. 30 5 - 5 - iA1E TEMPl:"iATURE t+c1 ••J,.c
tr 15 1 - 8 - 8 - MHz
~
·
100
.,.
"
tON
150C
30C
12
15
1.5
1.88
-
- -
1 -
-
-
1.5 ·, -L.e ~ I'
.
ts 150C 12 1.5 - 1.8 - - r r--.

- -
IB1 = IB2
tf
30C
150C
15
12
1.88
1.5 - 0.4
-
-
1.5
-
,.s
··..
10
, . .. .
IB1 = IB2 30c 15 1.88 - - - 0.5
M
COL.L.ECTOR CURRENT (Iel -
W
A
~
t2CS-:st275
Fig. 6-Typical de beta characteristics for

R9JC - 1.17 - 1.17 0c/w both types.
a CAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer.
=
b Pulsed; pulse duration 300 lIS, duty facfor .. 2%.
CVCC·
COLLECTOR CURRENT (leI-A 1:zes-U271
Fig. 7- Typical galn-bandwldth product for

both types.
__________________________________________________________________ 397
BUX11, BUX11N
11M Is"Ie/IO • 4
,.
IS 2·.12-~;":':""1-+-+-++-t-+--t---r11 1 CASE TEMPERATURE ITe '-25·C
:Is"Xe/8
~ I 1 1
~ CASE TEMPERATURE (Tclo-40-cl
+l-t-+-t-l
~ I 1.61--+--1--1-++-+-11
:'::"
~! 1.2J--+-+-+-++--+-jt-'-t---t--H 1
~~
7 o.81-_-I-_+-+-l-+-A-,II
F".:....c'-j----j-(-i
~ 0.41----+-+-+-+--vti;'~..':;;c·c---j---t--H 'ON
~
8
10
COlLECTOR CURRENTUC)-A
., 100
SZCS-314~3
02
4 6 8 I Z
" 6 S 10
"
Fig. 8- Typical collector·to-emltter saturation Fig. 9- Typical base-to-emitter

Fig. 70- Typical saturated-switching times as
voltage characteristics for both types. saturation voltage charac- a function of collector current
teristics for both types. for both types.
g'l<lo',
r~
~~
.
4
~C'bo
CASE TEMPERATURE (Tel. 25"C
FREQUENCY (t 1-0.1 MHI
B~
~~ 2
5~
! ~ IC)3
u~ ,
i~ 45
:!5 4
3~ , 1'--~o
h
~~ 10'
, . .. 10
, . .I , t-- ,
100
COlLECTOR-TO-BASE VOLTAGE {Veal-V'OR
4 00
EMITTER-TO-BASE VOLTAGE IVEBI-V 9~C5-51"'!l9
Fig. 77-Typical common-base Input (CiboJ or

output (CoboJ capaCitance charac-
teristic for both types.
398 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
_ _ _ _ _ _ _-'--_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
BUX12
Features:
High-Voltage, High-Current, VeEO - - 250V
Silicon N-P-N Ie - - 20A
Pr --150W
Power-Switch ing Transistor
The RCA-BUX12 is an epitaxial-base switching circuits, such as converters, In-

silicon n-p-n transistor having high- verters, . switching regulators, and
voltage and high-current capabilities and swltching-control amplifiers. The RCA-
featuring fast-switching speed at low BUX12 is supplied in a steel JEDEC TO-
saturation voltage_ It is especially 204MA hermetic package.
suitable for control amplifiers and power-
JEDEC TO·204MA
MAXIMUM RATINGS, Absolute-Maximum Values: (See dimensional Duiline "An.)

BUX12
VCBO·················································· ........ . 300 V
VCER
RBE = l00Q ...•...•.•....•...•..•..••...•.•.......•..•.•.•••.• 290 V
VCEO .......................................................... . 250 V
VCEX
VBE = -1.5V ................................................. . 300 V
VEBO .......................................................... . 7 V
IC ............................................................. . 20 A
ICM··················································· ......... . 25 A
IB ............................................................. . 4 A
Pr
TC" 25'C ..................................................... . 150 W
TC > 25'C derate linearly ....................................... .. 0.86 W/'C
T5 tg, TJ ........................................................ . -65to +200 'C
TL
At distances" 1/32 In. (0.8 mm) from seating
plane for 10 s max ............................................ .. 235 'c
CASE TEMPERATURE CTCJ-~C
Fig~ 2-Deratlng curves for ISib and

dissipation .
.
,
.'-' C'4 s
IOO;-~ ~
:~f -I'4}"VIi'f"C-
J ~ ~'"
'JI\~~ ~
10
, 1% Ll 13-J1
4 6 II 4 2 4 6 I ~ , .f'. 11'10'
COLLECTOR-TO- EMITTER VOLTAGEI"cEI-V
92CM- 32526
Fig. I-Maximum safe-operating areas for BUX12 ITC = 2S·C). Fig. 3- Thermal-cycling chart.
______________________________________________ 399
BUX12
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 25°C

VOLTAGE CURRENT
CHARACTERISTIC aUX12 UNITS
Vdc Adc
ICEO
VCE VaE
200 -
IC
-
la
0
Min.
- _.
Typ. MIx.
1.5
ICEX 300 -1.5 - - - - 1.5
mA
TC - 125'C 300 -1.5 - - - - 6
lEBO - -5 0 - - - 1
VCEO(sus)D - -
0.21 0 2508 - - V COLLECTOR-TO-EMITTER VOLtAGE IVeE) - V
V(BR)EBO IE - 0.05 A - - 0 - 7 - - 92C5-30374
VBE(sat) - -
108 1.25 - 1 1.5
Fig. 4-Typlcal output characteristics.
VCE(sat)
51 0.5 - 0.2 1 V
101 1.25 0.3 1.5 COLLECTOR - TO-EMITTER VOLTAGE (VCE).4 V
hFE
4 51 20 60
f: I 1
ISib
4
140
101
- - -
10
0.15 - - . .~~
5 "'·1
t = 1 s, nonrepetitlve
fy,
30
15
-
-
-
1
- -
-
-
5
8
-
-
-.
- MHz
A
I·
is
2S-C
,,~~
K~J .100.
c
tON Vec
-
10 1.25 0.5 ·1
~ ~~
ts = 10 1.2SC - 1.5 2 jdl -40"C.
I ··
~ 10
tf 150 V -10 1.2SC - 0.2 0.5 I"--
f'""...
- - - - - -
· . . . . .,.
R9JC 1.17 'C/W g
, 00 000
a Pulsed; pulse duration = 300 !,s, duly faclor" 2%. COLLECTOR CURRENT Ilel-A
92CS·,,25U
b CAUTION: The suslalnlng vollage VCEO(SUS) MUST NOT be measured on a curve Iracer.
Fig. 5-Typical dc beta characteristics.
CI B1 = IB2'
4 IS. Ie"
I~
i'i
~>
!J. 2
~!
Ii ~£
~~
I!~
,0
I
_4O"C -t:::::E:::
~
.\00.0
1:1> •
~1\t"£.1l~~\
~
,tz;-c
~1£.",'t
o· i
0.4 0.8 1.2 1.6
COLLECTOR CURRENT (Ie) -A t2CS-5252. COLLECTOR CURRENT tICI - A 92CS-30188
0.' . . ..I . . . 10
COLL.ECTOR CURRENT(Icl- A
100
,2CS-lI031S
Fig. 6-Typlcal galn-bandwldth product Fig. 7-Typlcal collector·to-emltler satural/on Fig. 8- Typical base·to-eml/ter saturation vol/-
characteristic. . vol/age characteristics. age characteristics.
3,'t.lC)4s
-:.,1 6
t:::: =<'11> CASE TEMPERATURE CTel • 2!-C
FREQUENCY (11 • IMHt
~1 4
~~ Z
~Ij
~! I03S
~u 6
-.....
!~ 4
~~
~i!""
~~
~Ii!
~~
.
2
•
t- e",.
Ii . , ... ,
4
~100
·•• 00
COLLEC1OR-TO-BASE VOLTAGE 1Vcal-YOR
, .. 00'
EMITTER-TO-USE VOLTAGE C'I£al - Y nCS':SOHI
Fig, ·9-Typlcal saturated-switching times as Fig. 10-Typlcal common-base fnput (Clba)
a function of collector current. or output (Cobol capacitance
characterlstics_
~O __________________________________________________________
BUX13
Features:
High-Voltage, High-Current
VCEO - - 325V
Silicon N-P-N IC --15 A
Power-Switching Transistor PT --150 W
The RCA-BUX13 is an epitaxial-base switching circuits, such as converters, in-

silicon n-p-n transistor having high- verters, switching regulators, and
voltage and high-current capabilities and swltching-control amplifiers. The RCA- TERMINAL DESIGNATIONS
featuring fast-switching speed at low BUX13 is supplied in a steel JEDEC TO-
saturation voltage. It is especially 204MA hermetic package.

BUX13
JEDEC TO·204MA
VCBO·················································· ........ . 400 V
VCER (See dimensional outline "A".)
RBE = 100Q .•................................................. 390 V
VCEO ....................... '" ................................ . 325 V
VCEX
VBE = -1.5V ................................................. . 400 V
VEBO·· .. · ..................................................... . 7 V
IC ............................................................. . 15 A NOTE' CURRENT DERATING AT CONSTANT VOLTAGE
,\PPLIES ONLY TO THE DISSIPATION-LIMITED PORTION
ICM····· .. ··· .. ·· .. · .. ······ .. ····· .... ··· .. ·· .. · .. ········.···· 20 A ANO ISIt.. -LIMITEO PORTION Of MAXIMUM-OPERATING.
IB ............................................................. . 3 A AREA-CURVES. DO NOT OERATE THE 3PECIFIED VALUE
fOR Ie MAX.
Pr
TC" 25'C ..................................................... . 150 W
rC > 25'C derate linearly ........................................ . 0.86 W/'C
Tstg,TJ ........................................................ . -65to +200 'c
TL
At distances:;' 1132 in. (0.8 mm) from seating
plane for 10 s max .............................................. . 235 'c
50 75 100 125 150 175 200

CASE TEMPERATURE (Tcl-"C
Fig. 2-Derating curves for ISlb and

dissipation .
.
i
; ,
,.
...~,;~ ~
~
~
~
t;
100
• "
'<s,
~
""'v-9t-
~"'C:t"(4
~ , 1\ 1\ I'" ~ .....,
~It ), IN ,
COLLECTOR - TO- EMITTER
If • 10 ...,. If 1105
9ZCM-32""32
Fig. I-Maximum safe-operating areas for BUXI3(TC = 25'Cj. Fig. 3-Therma/·cycllng chart.
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 401
BUX13
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) 2S0C

VOLTAGE CURRENT
aUX13 'UNITS
CHARACTERISTIC Vdc Adc
VCE VaE IC la Min. Typ. M8x.
ICEO 260 - - 0 - - 1.5
ICEX 400 -1.5 - - - - 1.5
rnA
TC - 125'C 400 -1.5 - - - - 6
lEBO 5 0 1
VCEO(suS)D - - 0.28 0 3258 - - V
V(BE)EBO IE - 0.05 A - 0 - 7 - - COLLECTOR - TO-EMITTER VOLTAGE (VCE J - V
VBE(sal) - - 88 1.6 - 1 1.5

V Fig. 4-Typical output characteristics.
VCE(sal)
- - 48 0.8 - 0.1 0.8
- - 88 1.6 - 0.2 1.5
jW.
hFE
ISlb
4
4
140
-
-
-
48
88
-
-
-
-
15
8
0.15
-
-
-
60
-
- "
~
. ""~ J
COLlECTOR - TO -EMITTER VOLTAGE (VCE' -4 V
I
A .-~..."
I = 1 s, nonrepelitiite 30 - - - 5 - - ~ ~.,,!.
~"f'f
IT 15 - 1 - 8 - - MHz ~ , 25-C ~-t-)
...... ""0.
ION VCC - 8 1.6 - 0.5 1.2
Ia i' c
Is = - 8 1.6c - 1.7 2.5 I'S , 10

-40·C
~
If
ReJC
160 V
-
-
- -
8 1.6c
-
-
-
0.3
-
1
1.17 'CIW
!~ '
g
.
,
r--
"'" , . ..
, , , , 10
a Pulsed, pulse duration = 300 ~s, duty factor'; 2%. 100
COLLECTOR CURRENT (lel-4
b CAUTION: Sustaining Voltage VCEO(sus) MUST NOT be measured on a curve tracer.
c IB1 = 182' Fig. 5- Typical de beta characteristics.
I ~ Ie· Ie/5
I~ ~>
~J.
:!
2
Ii ~l
~~ ~
..
b~
~~
wg '''''c -t:::::~.\oo'c
i ~~1<j"lI1C'!
0.4 0.8 1.2 1.6

COlL.ECTOR CURRENT {leI -A ItCS- :US24
2 I I
COL.LECTOR CURRENT (Iel - A
0
CO"I
, . .. 10
COLLECTOR CURRENTIIc) -
,
A
.. 100
'2(5-30371
Fig. 6- Typical gain·bandwidth product Fig. 7- Typical collector·to·emltter saturation Fig. 8- Typical base·to-emltter saturation
characteristic. voltage characteristics. voltage characteristics.
CASE TEMPERATURE (Te'- 25-C

FREQUENCY If). IMHJ:
.68 468 46
10 102 10'
COLLfCTOR-TO-BASE VOlTAGE (Vea)-VOR
EMITTER-TO-BASE VOLTAGE lVea)-V .2CS·50188
Fig. 9- Typical saturated·switching times as Fig. 10-Typical common·base input (Cibolor
a function of co/lector current. output (Cobol capacitance
characteristics.
402 _____________________________________________________________________
BUX14
Features:
Silicon N·P·N Switching Transistor
VCEO - 400 V
IC 10 A
For High-Voltage SWitching and Pr - 150 W
Amplifier Applications in Industrial
and Commercial Equipment
RCA-BUX14 is a silicon n-p-n power tran- use in a wide range of inverter or con-
sistor featuring fast. switching speeds, verter circuits and pulse-width-modulated
low saturation voltage, and high safe- regulators.
operating-area (SOA) ratings. It is The RCA-BUX14 transistor is supplied in a
especially" designed for use in off-line steel JEDEC TO-204MA hermetic
power supplies and is also well suited for package.
JEDEC TO-204MA
MAXIMUM RATINGS, Absolute-Maximum Values: (See dlmenllonal outline "A".)
BUX14
VCSO ............................................................................ 450V
VCEO ............................................................................ 400V
VCEX
VSE= -1.5V ................................................................... 450V
VCER
RSE=1000 ..................................................................... 440V
VESO .............................................................................. 7V
IC ................................................................................ 10A
ICM •......••.............•......•........................................•........ 15A
IS .•..•.•.....................•............••..........•........................... 2A ~lHf4i:H lH;:111·ltj:i:
PTe
At T C upto 25· .................................................................. 150W fr, 1:8: "Fi:,:=: .lOr "
TJ,T stg ................................................................. -65\0 +200·C
T L: ., .~-+.. :2= -~C
At distances 2:1/16 in. (1.58mm)from case for 10s max. . ..... " .................... 235 ·C
'00
m ~ n = _ ~ ~ _ =_
CASE TEMPERATURE ITc1_oc
Fig. 2 - Dissipation and ISlb derating curves.
lj (MAX_)·200·C
•
1 . r~s~>
I
,
1\" f"
:t ,
%
0 ~".~.4>",,~
E 4
, \ '" iF'"~f
~
~~ ~ ~h
a
~
w
.It.
I---
I~~~ \
~
.,
Fig. 1- Maximum safe·operating areas (TC =2S·C).
10
8 104
, 8 105 ,
Fig. 3· Thermal-cycling chart.

,
'"
I 6
,
_____________________________________________________________________ 403
POWERTRANSISTORS __________~______________~----------------------------
BUX14
ELECTRICAL CHARACTERISTICS, at Case Temperature (T cJ = 25°C la IS'IC/5 _ _ _ _ _ ._~_+ ___

TC=-40·C
unless otherwise specified TC'125°C
Te ·25·C
BUX14
Vdc Adc
ICEO 320 0 1.5- - - -
IICEX 450 -1.5 - 1.5 - - - rnA
TC-125'C 450 -1.5 - - 6 - -
lEBO -5 0 - - 1 - -
VCEO(sus)b 0.2a 0 -
400 a - - - V COLLECTOR CURRENT (ICI-A
VCBRIEBO IE-0.05 A - 0 7 - - - -
VBE(sal) - 68 1.2 - 1 1.5- V Fig. 8 - Typical col/ector-to-emitter saturation
VCE(sal)
38 0.6 - - 0.2 0.6- voltage as a function of col/ector
current.
68 1.2 - 0.5 1.5- -
hFE 4 - 38 - 15 - 60
4 - 68 - 8 - -
'Sib 140 - - - 0.15 - -
A
1-1 s nonreoelilive 30 - - - 5 - - VCEORATING
15 - 1 - 8 - - MHz
.. 7
fT
Ion
Is
VCC
=
-
-
6
6
1.2
1.2c
-
-
0.5
1
1.4
3 fls
~6
5
I
5 1-----
V loev
If 30 V - 6 1.2c - 0.3 1.2

~4
ROJC - - - - - - 1.17 'C/W
'" 3
I CLAMPED
8Pulsed, pulse duration = 300 ~s, duty factor 50 2%.

g TC:S 12S"C I vCEX RATING/'"
~ 2 I
bCAUTION: Sustaining Voltage VCEO(sus) MUST NOT be measured on a curve tracer. .J
01
CI B1 =IB2' u
! 200 !COlLECTOR-rO-EMITTER
vnl T.ar.:~ 1\,__ 1_""
I II 4 I COLLECTOR - TO-I::M ITT.,.Q
VOLTAGE (VCE)-4V
JI 1,..VLLtLIUK-IU-EMrTTER VOLTAGE
92CS-'0455
~
r;1'
:~, -- -
~c
t---
switching between saturation and
cutoll.
~
, ~
~
a: L.L 104 CASE TEMPERATURE lTCJ=25"C
; CASE ITEMP'RAiUR'rCi i:::;;;' ~ i\

~
g
10
. II
I I II ,
"
, , . 10
0.1 I 10
92CS-32210
92CS-32211
Fig. 5 - Typical base-to-emitter voltage as a
Fig. 4 - Typical dc beta characteristics. function of collector current.
ff-----+--~--~---~--- - 2 4 G 810 2 4
COLLECTOR-lO-BASE VOLTAGE (Vcsl-V OR
EMITTER-lO-BASE VOLTAGE (VES)-\'
6 SIO" .2 4 6 8103
11 _40· C Fig. 10 - Typical common-base input or output

25*C_?c-
--
gs capacitance characteristics as a func-
...J ~~ERA"Ufl.E(TCl -t---t---~ tion of collector-to-base voltage or
§; 6- CA.SETE emitter-to-base voltage.
--j-----r-
10
COLlECTOR- TO-EMITTER VOLTAGE (VeE)-V COLLECTOR CURRENT UC)-A
Fig. 7· Typical base-to-emitter saturation

Fig. 6 - Typical output characteristics. voltage as a function of collector
current.
404 __________________________________________________________________
_ _ _ _--'-_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
BUX15
Features:
High-Voltage, High-Power, VeEO - - 500V
Silicon N-P-N Ie
Pr
- - 8A
--150 W
Power-Switching Transistor TERMINAL DESIGNATIONS
c
The RCA·BUX15 is an epltaxial·base

silicon n·p·n transistor having high·
voltage capability, fast switching speeds,
and low saturation voltages, together
with high safe·operating·area (SOA)
ratings. It Is specially designed for use in
off·line power supplies aM is also well
suited for use in a wide range of inverter
or converter circuits and pulse·width·
modulated regulators.
The RCA·BUX15 is supplied in a steel
JEDEC TO'204MA hermetic package.
'Q5 JEDEC TO·204MA
92CS-34134
(See dlmenllonal oulllne "CC".)

BUX15
veBO·················································· ........ . 500 V
VeER
RBE = 1002 .................................................. . 500 V
VeEO·················································· ........ . 500 V
VeEX
VBE = -1.5V ................................................. . 500 V
VEBO·················································· ........ . 7 V
Ie .... · ...... ··· .. · ...... · .. ·· .. · .. ·· .. ·· ...... ·· ...... · .... ·· .. 8 A
leM········ .. ·········································· ......... . 10 A
IB .............................................................. . 2 A
Pr
Te"25'e ..................................................... . 150 W
Te > 25'e derate linearly ........................................ . 0.86 w/'e CASE TEMPERATURE {Tc)--C
Tstg, TJ ........................................................ . -65to +200 'e
TL Fig. 2-Derating curves for ISlb and
At distances,. 1/32 in. (0.8 mm) from seating dissipation.
plane for 10 s max ............................................ .. 235 'e
1j (MAX·)-ZOO·C
.
1
!
'••
~~.~~
~
~ . \ '\ I\'... ~-r4
i\ '\ i'-~~~ ~
"Ii\ .It .
Iiis
~~t ~~.
.
i" -
I~~~•
z
•• ,""-
10
8 10•
• • 'IDS •
2
12CI-'0451
Fig. 3- Therma/·cycling chart.
2 .. 6 8
COLLECTOR-lO-EMITTER VOLTAGECVCE'-v 0.' I
COl.LECTOR
10
CURRENT (I.e )-A 92CS-)2•••
100
Fig. f-Max/mum safe-operating areas (Te = 25 "C). Fig. 4- Typical dc beta characteristics.
__________________________________________________________________ 405
BUX15
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) 25°C

VOLTAGE CURRENT
CHARACTERISTIC BUX15 UNITS
Vdc Adc
ICEO 400 0 - - 1.5
ICEX 500 -1.5 - - 1.5
mA
TC - 125·C 500 -1.5 - - 6
lEBO -5 0 - - 1
VCEO(sus)b 0.2a 0 500 - - V
COLL.ECTOR-TO-EMITTER \tOLlAGE (VCE)- V
V(BR)EBO IE = 50mA 0 7 - -
hFE
4 2a 15 - 60
Fig. 5- Typical output characteristics.
4 4a 8 - - COLLECTOR - TO - E MITlE R
VBE(sat) 48 0.8 - 0.9 1.5 VOLTA" 'V"i' 4v

28 0.4 - 0.15 0.6 V 1. , _40· C
I
VCE(sat)
4a 0.8 - 0.4 1 ~ 8 2~\"\2'!>.C
~
- - 6~E. TEtAPtRATURE C
!:L
ISib
=
1 s, nonrepelilive
15
140
30
1
0.15
5
8
-
-
-
-
MHz
A
g
~
~
.
I
4 0.8 - 0.5 1.6
a
*,
ION VCC
Is IBl IB2 = = 4 0.8 - 2.7 5 "s ~
~
If IBl - IB2
RIJJC
150 V 4 0.8 - 0.7
-
1.4
1.17 ·CfW
OJ
,
COLLECTOR CURRENT {tc1-A
.. '0
Fig. 6- Typical base·to·emitter voltage as a
a Pulsed; pulse duration = 300 ~s, duty factor'; 2%.
function of collector current.
b CAUTION: The sustaining voltage VCEO(sus) MUST NOT be measured OA a curve tracer.
I 11 I I
~~ I I I
2
~
~:;-
1~40-C
•
, ~cr.s
25·C~
E 1E.
lI\PER"'-TLlRE \1c l~
12!:>oC -
~'"
~ ~4
~Jl
o
\' ,
~
o
t.> 0.1
D.'
, .
COLLECTOR CURRENT (Ie)- A 92C$- 320"~
'0
0'
2 4 IS' 10
COL.LECTOR CURRENT,I:Icl-A IIC&-3204'
Fig. 7- Typical collector·to-emitter saturation Flg.9~ Typical saturated·switchlng times as

Fig. 8-Typical base·to·emitter saturation volt·
voltage as a function 01 collector age as a lunction of collector current. a function of collector current.
current.
10 4 & 8 10 .. G 8102 2 . . , 8103

COl.l.EC~-lO-BASE VOLTAGE IlIcsl-V 92CS-320!!l4
Cfl EMITTER-lO-BASE VOLTAGEIVES)-V
0.00124680,0,246'0.12" 68,2468,0 Fig. 11-Typical common·base Input or output

PULSE WIDTH (Tp)-S nCS-32i)43 capacitance characteristics as a
Fig. 10-Typicaf thermal·response function of collector-Io·base voltage
characteristic. or emitter·to-base voltage.
406 _____________________________________________________________________
- - - - - - - - - - - - - - - - - - - -_ _ _ _ _ _ _ _ POWER TRANSISTORS
BUX16, BUX16A, BUX16B, BUX16C

High-Voltage, High-Power Silicon N-P-N :::7:1~~ratings: VCERlsusl"pto400V.RBE<;5011
Power Transistors VCEolsusl"pto350V

• Hisll power dissipation rating: PT = 100 W at VeE"" 135 V. T C = 2SDC
For Switching and Linear Applications in • For switching applications where circuit values and operating
Industrial, and Commercial Equipment conditions require a transistor with a high second
breakdown rating (IS/b) (limit line begins at 135 V)
The RCA BUX16-series devices are multiple epitaxial silicon The high breakdown-voltage ratings and exceptional second- • Maximum area-of-operation curves for de and pulse operation
n·p-n power transistors employing a new overlay construction breakdown capabilities of these transistors make them especially
with several emitter sites. All devices employ the popular suitable for use in series regulators, power amplifiers, inverters,
JEDEC TO·3 package; they differ in breakdown-voltage, deflection circuits, switching regulators, and high-voltage
leaka~rrent. and current-gain values. bridge amplifien. TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Absolute-MaximiJm Values:
BUX16 BUX18A BUX1BB BUX16C
COLLECTOR-TO-BASE VOLTAGE ................... VeBO 250 325 375 425 V
With base reverseobiased (VBEI .. -1.5 V •.•.••.••••••••••• VCEV 250 325 375 425 V
.......
With external base-to-emitter resistance IRBEI <:;SO n VCER(susl 225 300 350 400 V
With base open ....................................... VCEO(su!il 200 250 300 350 V
EMITTER·TO-BASE VOLTAGE ........................... V ERO 6 6 6 V
CONTINUOUS COLLECTOR CURRENT •••••.•.•..•.•.••.•• Ie 5 A
CONTINUOUS BASE CURRENT .......................... I• 2 A
At cae temperatures up to 25:Cand VCE up to 135V .•....• 100 100 100 100 W JEDECTo-3
:: =!:=:!~::::a: ~{a~~.~~~.~~~. ~~ ~.:'.'.'

TEMPERATURE RANGE:
••• '.•.
- - - - See Fiq. 1
Derate hnearlv to 200°C
(See dimensional oulllne "A".)
Ster• •nd operating IJunction) ••.•••.•.••.• _ •••••.••••• - - - - -65 to 200 ·c
PIN TEMPERATURE (During saldllringl:
At distance;> 1/32 in. 10.8 mm) from seating plane for 10 5 max. T. 230 ·c
~~-TO-t."'ITTEfi VOLTAGEtvCE'·IOY
1 40
0
II II II
~
~
~
!O
1-, n !1 .~,
.,;<#:,.:;..t-
\1C,·125"C
E zo q1.~,~~ r-'~'" ~
\['\
~b
~
r--i-l-m
~_'I I 1\
i1l
'0
~
~ t-.-
g
0.01 to 10
."I COI..LECTOR CURRENTtlcl-A
u Fig. 2 - Typical dc beta VS. collector current

!:! for all types.
t-
Z
"'
0::
!!i
<.>
0::
::?
:.l
..J
..J CCl.l..ECTOR-TO-EMITTER VOLTAGE(Vcf.I.l0 v
O· CASE TEMPERATURE (Tcl.2'- C
<.>

92C$-242B3 . .. QI
. ..
'D
...
'0
Fig. 3 - Typical gain-bandwidth product vs.

col/ector current for al/ types.
------------------------_____________________________________________ 407

ELECTRICAL CHARACTERISTICS, At c."" TtIITlpBrBtu,. (TC' - 25"C unl_ othtJrWiul/J«ified

VOLTAGE CURRENT
CHARACTERISTIC SYMBOL BUX16 BUX16A BUX16B BUXI6C UNITS
Vd. Adc
,
VCI' VBE IC IB Min. MIx. Min. MIx. Min. Max. Min. Max.
250 -1.5 - - - 5 - - - - - -
·Collector Cutoff Current: 325 -1.5 - - - - - 5 - - - -
With base reverse-biased ICEV 375 -1.5 - - - - - - - 2 - -
425 -1.5 - - - - - - - - - 2
With base reverse-biased
TC= 150°C ICEV 250 -1.5 - - - 8 - 8 - 3 - 3 rnA
With base open ICEO 175 - - 0 - 5 - 2 - - - -
250 - - 0 - - - - - 5 - 2
Emitter Cutoff Current:
VEB = 5 V lEBO - - 0 - - 5 - 5 - 2 - 2 rnA
Sustaining Voltage1l
With base open VCEO('u,) - - 0.2 0 200 - 250 - 300 - 350 - V

emitter resistance
(RBE) <;;50 n VCER('u,) - - 0.2 - 225 - 300 - 350 - 400 -
Emitter-ta-Base Voltage VEBO - - 0 0.02 6 - 6 - 6 - 6 - V
10 - 0.4 b - 15 130 15 130 15 130 15 130

DC Forward-Current Transfer
Ratio hFE 10 - ~ - 15 - 15 - 12 - 12 -
10 - 4.5 b - 5 - 5 5 - 5 -
Base-ta-Emitter Voltage VBE 10 - 2b - - 3 - 3 - 3 - 3 V
Collector-ta-Emitter - - 2b - -
Saturation Voltage VCE(,aU - - 4.5 b
0.25
1.125 - ,
2.5 2.5
~
-
-
2.5
,
-
-
2.5
5
--
Gain-Bandwidth Product 'T 10 - 0.2 - 5 - 5 - 5 - 5 - MHz
Emitter, Small-Signal,
Short-Circuit. Forward-
Current Transfer R,atio C
I I hie 10 - 0.2 - 5 - 5 - 5 - 5 -
(at 1 MHz)
Common·Emitter, Small- ,
Signal. Short-Circuit,
Forward-Current Transfer
R.tio (.t 1 kHz) hie 10 - 4 - 20 - 20 - 20 - 20 -
Output Capacitance
(.t 1 MHz):
VCB"'0V,IE"0 Cobo - - - - - 150 - 150 - 150 - 150 pF
Second·Bre.kdown Collecto,
Currentd :
(With bolO lo,word·bia ..d)
Pulse dur.tion
(nonrepetltive) - 1 • ISlb 135 - - - 0.75 - 0.75 - 0.75 - 0.75 - A
Second·B'OIkdown Energy':
(With bue ,"verlO·biased)
L"l50IIH,RBE-50n ESlb - -4 - 1.2 - 1.2 - 1.2 - 1.2 - rnJ
Th.rmel Resistance:
Junction-to-cae RSJC - - - - - 1.75 - 1.75 - 1.75 - 1.15 °CIW
a CAUTION: Sultl!lningvolugn VCEO(luI•• nd VCERClul1 MUST NOT~ mIIlurld on e curv, tr'':'I.

Putltd. put.. dUl'lltion <; 360 ,,1, duty f.ctor • 2".
o MlHUred.t. frequ.ncy whe,.. Ihf~ il dtcruling at .ppro)limltely e dB per octav•.
tSlb il defined II tM current It which NCOnd brllkdown occurs.t. lpecifitd coll,etor voltage with th, .mittor.1t
Junction fonwrd bliNd for transistor oper.tlon in the .ctlve rlglon.
• ES/b i, dlflMd.1 the "''''ov .t which NCond breakdown occurs under ~clfled reve,... bill conneetions.
ESlb • ~ Ll2 where L i,. ItrIH load or IlIkqt induct.nCl. Ind I II the PHk collector curr,nl.
408 ____________ ~ _______________________________________________________

POWER TRANSISTORS
i 1.8
JI.6
~ 1.4
.'
a:: 1.2
a
~ 0.8
8~ 0.6
10 4 ,; 6 102 2 4 I; 8 101 6 6 104
EXTERNAL E1ASE-TO-EMITTER RESISTANCE IRBEl-n

COLLECTOR-TO-EMITTER VOLTAGE (VCEJ-V 112L5-I96T
Fig. 4 - Typical output characteristics Fig. 5 - Typical transfer characteristics Fig. 6 - Sustaining voltage vs base-to-
for all tvpes. for all tvpes. emitter resistance for all types.
:1~~:iE;YR~~~~~~~~~V{~:\:
C.t.SfTEMPERUURE(TC)_2S·C
I:: I~::
z 'C:-'-C:+e:::-:+:-:-:-:+ L
c
I ? il·.
i =1-- '7
8-.¥:l'::I·_ i_ l
·1
••.. T i i ! .. +~, t-+--H .

>1 I--t'++ -~-
BASE SUPPLY VOLTAGE (Vse}-V
Fig. 7 - Typical reverse-bias, second- Fig. 8 - Typical reverse-bias, second- Fig. 9 - Typical reverse-bias, second-
breakdown characteristic breakdown characteristic breakdown characteristic
for all types. for all types. for all types.
PUL$EWIOTH,!20jJt
REPETITION RATE'SOOPULSES/s
PULSE WIOTH .. 20 "I COLLECTOR SUPPLY YOLTAGE(YCC)'30 Y
REPETITION RATE. 500 PULSES/. CASE TEMPERATUREITCI'Z5'C
COLLECTOR SUPPLY VOLTAGE (Yccl-30Y
CASE TEMPERATURE ITc )·ZS·C
..L.H-+++-
>
1-1.5 ~ r
. ,.j-,. +-
~ o.e~j:::t~~~:::tj:::tj~~=~~::t~::,:,-:"""
~ 0.6 H-t9--+H-t++H-+++-H+-
~ o.4H-+++-H-+++--t++H-t-t-1
o
~ o,zH-+++-H-++-HH++H-t-t-1
COLLECTOR CURRENT tIcl-A
, "COLLECTOR CURRENT IlCI-A
Fig. 11 - Saturated switching times (turn-

Fig. 10 - Saturated switching time (storage) on and fal/) vs. collector current
vs. collector current for all types. for all types.
__________________________________________________________________ 409

Features;
Silicon N-P-N Switching Transistors • High voltage ratings:
VeBO = 250 V (BUX171
For Switching Applications in Industrial and Commercial Equipment = 350 V IBUX17A)
= 400 V (BUX17B)
The RCA-BUX17. BUX17A, BUX17B, and BUX17C are The exceptional second-breakdown capabilities and high = 450 V (BUX17C!
multiple epitaxial silicon n-p-n power transistors utilizing a voltage-break.down ratings mak.e these transistors especially
multiple-emitter-site structure. Multiple-epitaxial construction suitable for off-line inverters, switching regulators. motor • High dissipation rating: PT'" 150 W
maximizes the volt-ampere characteristic of the device and controls. and deflection-circuit applications_ • Low saturation voltages
provides fast switching speeds. Multiple-emitter-site design • Maximum $8fe-area-of-operation curves
The high breakdown voltages, low saturation voltages, and
assures uniform current flow throughout the structure, which
fast-switching capability of these devices make them especially
produces a high IS/b and a large safe-operation area.
suitable for inverter circuits operating directly off the rectified
These devices use the popular JEDEC TO-3 package; they 115-V power line or In a bridge configuration operating from
differ mainly in voltage ratings and leakage-current limits. the rectified 220-V line. TERMINAL DESIGNATIONS

COLLECTOR-TO·SASE VOLTAGE
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE
With base open .
With reverse bias (V SE ) '" 0 V (with base-emltter shorted).
With external base-to~mitter
EMITIER·TO·SASE VOLTAGE
reSIStance (R SE )" 50 n
V CBO
VCEOlsus)
VCEX(sus}
VCER{sus}
V EBO
BUX17
250
150
250
175
6
BUX17A
350
250
350
275
BUX17B
400
300
400
325
BUX17C
450
350
450
375
V
V
V
E
0 o
B
(FLA%GEI
0
~ZCS_~l~'~
COLLECTOR CURRENT:
JEDEC TO-3
Continuous 10 10 10 10 A
'C
Peak.
I.
'CM
PT
30
10
30
10
30
10
30
10
A
A
(See dimensional oulline "A".)
At case temperatures upto 25:Cand VCE up to 30 V 150 150 150 150 W

At case temperatures upto 25 QCand VCE above 30 V .
At case temperatures above 25 C .
--- See Fig. 1
TEMPERATURE RANGE:
Storage & Operating (Junction) . - - - -65to-t2oo _ _, _ °c
PIN TEMPERATURE (During soldering):
At distances ~ 1/32 in. 10.8 mmJ from case for 10s max. ----230 °c
" II 8to'
Fig. 2 - Thermal-cycling rating chart for all types.

~ 10
~
I-
Z
"'
0:
0:
::>
U
0:
o
I-
:.l COLLECTOR-TO-EMITTER VOLTAGE
(V CE)·3V
-'
-'
8
6 8 I
" 6 II
10
2
10 100 COLLECTOR CURRENT!IC1-A
COLLECTOR -TO-EM)TTER VOLTAGE (VCE 1"'v
92CS-24633
Fig. 3 - Tvpical normalized de beta characteristics
Fig. 1 - Maximum operating areas far all types. for all types.
410 __________________________________________________ ~ ______________

POWER TRANSISTORS

ELECTRICAL CHARACTERISTIcs. At c.. TtlfllptHature fTCI • 25"C unl. othllf'Wise sptICifi«l
TEST CONOITIONS LiMITS
VOLTAGE CURRENT
CHARACTERISTIC SYMBOL BUX17 BUX17A BUX17B BUX17C UNITS
Vdc Adc
Collector Cutoff Current: 175 - 10 - - - - - -

With external base-to-emitter ICER
275 - - - 10 - - ~ -
resistance (RBEI ~ 50 n 325 - - - - - 10 - -
375 - - - - - - - !O
250 -1.5 - 10 - - - - - -
ICEV
350 -1.5 - - - 10 - - - - mA
reverse-biased 400 -1.5 - - - - - 5 - -
450 -1.5 - - - - 5
250 -1_5 - 20 - - - - - -
AtTc~ 125·C
350 -1.5 - - - 20 - - - -
--
400 -1.5 - - - - 10 - -
450 -1.5 - 10
Emitter Cutoff Current lEBO -6 0 - 2 - 2 - 2 - 2 mA
3 4a 20 - 20 - 15 - 15 -
DC Forward-Current Transfer Ratio hFE 3
3
8
10"
-
7
-
-
-
7
-
- -
7 -
- -
7 -
-
Coliector·to·Emitter Sustaining
Voltage
V
With base open VCEO(susl 0.2" 1500 - 250b - 300b - 350b -
resistance (RBEI ~ 50 n VCER(susl 0.2" 175b - 27sb - 325b - 375 b -
Base-to-Emitter Voltage
3 sa - - - - 3.5 - 3.5 V
VBE
3 10" - 4 - 4 - - - -
Base-la-Emitter Saturation Voltage VBElsatl
sa 1.5 - - - - - 2 - 2
V
10" 2 .. 3 - 3 - - - -
Collector-ta-Eminer Saturation Voltage VCElsatl
sa 1.5 - - - - 3 - 3 V
10" 2 - 2 - 2 - - - -
Small-Signal. Short·Circuil.
Forward-Current Transfer Ratio:
f~ 1 MHz
Ihfe\ 10 1 2.5 8 2.5 8 2 8 2.5 8
Forward-bias Second Breakdown
Collector Current:
t :I 1 5, non repetitive ISlb 25 6 - 6 - 6 - 6 - A
Second-Breakdown Energy:
'Mth base r.. erse·biased. and
RBE ~ 5On,
L~40jlH ESlb -4 10 2 - 2 - 2 - .2 - mJ
Saturated Switching TIme IV CC~

200 V. IBI = IB21:
Turn-on ltd + Irl 8 1.5 - - - - - 2 - 2
tON 10 2. - 2 - 2 - - - - jlS
Storage 8 1.5 - - - - - 3.5 - 3.5
Is 10 2 - 3.5 - 3.5 - - - -
Fall 8 1.5 - - - - - 1 - 1
If 10 2 - 1 - 1
Thermal Resistance:
Junction·to-C8se RUC - 1.17 - 1.17 - 1.17 - 1.17 ·CIW
ePldsecl; pulse duretion <; 350 jlS. duty factor = 2%.

bcAUTION: The sustaining voltages VCEO(susland VCER(sus)
MUST NOT be measured on a curve trecer.
___________________________________________________________________ 411
POWERTRANSISTORS----_____________________________________________________

TRANSISTOR SHOULD BE OPERATED WITHIN TI1£
~ LIMITS OF THE. DERATING CURVE
t
~ I L
I 0.1
I ./'V
i
:;: 0.01
~ ..... ~j -- ---- - - -
~
I
zO.OOI ,I ,i
[l,QOI 0,01 0.1
TIME OR PULSE OURATION-fI1s
BASE·TO-EMITTER VOLTAGE (VaEI-V 92CS-I9471 COLLECTOR-TO-EhUTTER VOLTAGE IVCE1-V _ 9lCS-I9419/t1
Fig. 4 -' Typical thermal response characteristics Fig. 5 - Typical transfer characteristics for Fig. 6 - Typical output characteristics for
for all types. all types. all types.
Ie lle. 5 (BUlU7.AI ZelIa .5(8OXI7, Al

5.5(OOXI78,CI 5.3{aUXI76,C)
10 20
COLLECTOR, CURRENT (Ie I-A
10
"
COLLECTOR CURRENT (Ie I-A
20
Fig. 7 - Typical base-ta-emitter saturation-voltage Fig. 8 - Typical collector-ta-emitter saturation- Fig. 9 - Tvpical rise-time characteristics for
characteristics for al/ types. voltage characteristics for all types.
I
I~
I~
o 3 ~ 5 6 8 9 10 II 12 • I
COLLECTOR CURRENT (ICI-A COL.LECTOR CURRENT tIc I-A COLLECTOR CURRENT (IC I-A
Fig. 10 - Typical fall-time characteristic Fig. 11 - Typical storage-time characteristics Fig. 12 - Typical inductive· and resistive·load
for all types. for all types (with constant fall·time characteristics for all types.
forced gain).
412 _____________________________________________________________________
POWER TRANSISTORS
High-Voltage, High-Current Silicon N-P-N

Features:
Power-Switching Transistors
For Off-Line Switching Applications • Hermetic steel package-JEDEC TO-3
The RCA-BUX18, BUX18A, BUX18B, current-handling capability, ruggedness,
and BUX18C are epitaxial silicon n-p-n and fast switching speed is required. The
'v
power-switching transistors with pi-nu C
devices are hermetically sealed in a steel
construction. They are intended for use in JEDEC TO-3 package, and differ from
off-line power supplies and for other appli- each other in collector voltage ratings.
cations in which a combination of high-
BUX18 BUX18A BUX1UB BUX18C BOTTOM VIEW ,~cS.II".
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGES:
With reverse bias. Vee'" -1.5V . .. . . . . .. VCEV{su,1 300 450 600 750 JEDEC TO-3
With e;.clern~1 base-tn-emitter reSistance (Rae'" 100.QJ. VCERhu,) 250 325 375 425
With base open VCEOfsus) 200 275 325 375
EMITTER·TO·BASE VOLTAGE V EBO 6
'e
··,
CONTINUOUS COLLECTOR cuRRENT
'0.
PEAK COLLECTOR CURRENT.
'eM 12 12 12 12
fcC"AX.ICOHTIN,~, </::..o..,~
CONTINUOUS BASE CURRENT.
'B
PEAK BASE CURRENT
'BM
PT
JJII f'..'l>~, I
i ~Ec+:),,~~~~~ui=-H It -!-
AI case temperatures up to 2 SoC 120 1W 120 120 W , ...
" ·
At case temperatures above 2SoC - - - Derale linearly at 0.68 W/oC _ __ "t,
°e t-'<~
·
TEMPERATURE RANGE CASE TEMPERATURE (TCI • IOO·C~
Storage and Operating (Junction) . -65 to +200 °c ~
~ 'l>
LEAD TEMPERATURE !During Soldering)"
I III r-- ./
At distances~ l/32 on. (O.B mml from case for 10 s max .. 235 0c a ,
~
gOol ~ ~~YcL
8 •fr-----f-YCEO(hlAX.}
{tLI.
·Z15V(BUXI8Al
ZOOI Y{BUX,81 I," .n
- - f - YCEO {MAX.} .'Z5V(BUXI8B)
, - f--YC~O (jAj.l,.'15iIBUXtCII I-- tr
O.OJ
, ..
, ,
.0
COllECTOR·TO-EMJTTER VOLTAGE (VCEI-V
.. '00
, rn, .. '000
Fig. 2 - Maximum operating areas for all

types at 2!Y'C and 100°C.
.I
~
I-
Z
"'
II:
II:
13
II:
o
t;
"'
..J
..J
o
U
"uMBER OF TI1ERMAL CYCLES
Fig. 3 - Thermal-cycling rating chart for all

types.
_100
""'~ 8
.)--
COLLECTOR·TO·EMITTER VOLTAGE (VCE"'V
-- J
.-Jw.~
.f-- l"- I
~ rr I
I
,
'"'
2 !1.C
.......
g ITELp~RE
b,~
..
CASE fTcla ·40·C
'0
•1-- ) - -

92CS-27752 ~ , --
~
Fig. 1 - Maximum operatingareas for all types. g ,
4 £; 8 01
,
COLLECTOR CURRENT (lC]- A
. 8 I
, ..
Fig. 4 - Typical dc beta characteristic for aft
types.
__________________________________________________________________ 413
POWERTRANSISTORS ______________________----------------------------------
ELECTRICAL CHARACTERISTICS, At C. T«nphtu,. (T cJ • 2fi"C unlnl D~ """,IfI«J.
TEiT CONDITIONS LIMITS
CHARACTERISTIC VOLTAGE CURRENT lUX,.

SYMBOL IUX'.A IUX'.I IUX'8C UNITS
V de Ade
VCE VIE IC II Min. MIX. Min. MIX. Min. MIX. Min. Mox.
Collector CUloff Currenl:
With ext.rnal base·to.. mitter ICER 200 - 3 - - - - - -
resisllnce (RBE) • loon 275 - - - 3 - - - -
326 - - - - - 3 - -
400 - - - - - - - 3
With base· to-emitter junction 300 -1.5 - 0.5 - - - - - -
reverse·biased 450 -1.5 - - - 0.5 - - - - rnA
ICEV
600 -1.5 - - - - - 0.5 - -
750 -1.5 - - - - - - - 0.5
With base·ta-emitter junction 300 -1.5 - 10 - - - - - -
reverse-biased, 450 -1.5 - - - 10 - - - -
and TC' l000C 600 -1.5 - - - - - 10 - -
750 -1.5 - - - - - - - 10
'Emitter Cutoff Current lEBO -6 a - 3 - 3 - 3 - 3 rnA
Emitter Cutoff Voltage VEBO a Il(XXl 6 - 6 - 6 - 6 - V
3 4' .- - - - 10 - 10 -
DC Forward-Current
hFE 3 5' - - 7 - - - - -
Transfer Ratio 3 6' 7 - - - - - - -
5 I' 15 100 15 100 15 100 15 100
Sustaining Voltage: VCEO/sus) 0.2 a 200' - 275 b - 325 b - 375 b -
With base open V
resistance /RBE) = lOOn
VCER/SUS) 0.2 250' - 325'> - 375' - 425 b -
Forward-Biased Second-Sreak-
dow'n Collector Current:
3B 3.16 - 3.16 - 3.16 - 3.16 -
t "" 1 s, nonrepetitive
IS/b 200 0:1 - 0.1 - 0.1 - 0.1 - A
Base·ta-Emitter 6' 1.2 - 2.5 - - - - - -

Saturation Voltage V8E lsal) 5' 1 - - - 2.5 - - - - V
4' O.B - - - - - 2;5 - 2.5
Collector-to-Emitter 6' 1.2 - 1.5 - - - - - -
Saturation Voltage VCE/saU 5' 1 - - - 1.5- - - - V
4' 0.8 - - - - - 1.5 - 1.5
Reverse-Bias Second-Breakdown
Energy: ES/b -1.5 3 180 - 180 - 180 - 180 - mJ
RBE -3Ut L- 4O"H
Sal.rlled Swilching Time
"Bl"182): Is Vec'
Slor. 200 V 4 0.8 - 2 - 2 - 2 - 2
Fall If "S
Vee -
200 V 4 0.8 - 0.6 - ·0.6 - 0.6 - 0.6
Thermal Resistlnca:
Junction·ta.Case RgJC - 1.46 - 1.46 - 1.46 - 1.46 ·CIW
a Pulsed, pulse duration = 300 j.l.S, duty factor ~2%.

b CAUTION: Sustaining Voltages VCEO(sus) and VCER(susl. MUST NOT be measured on a curve tracer .
IS
..
I ~.,
~
L:
r: i· u
o I 2 3 4
UK-To-OIIIITTP IlTUMTIONWLTMIE [VIEI-t-V COLLECTOR·TO·EM1TTER SAT.....'TION VOlTAGE {Va: I."] - Y
"c.-non
"U·llIda
Fig. 5 - Typical collector~to-emitter satura-
tion-voltage characteristics for all Fig. 6 - Typical base-to-emitter saturation-
types. voltage characteristics for all types.
414 ____________________________--------------------------------------
POWER TRANSISTORS
BUX20A
Features:
Silicon N·P·N VCEO - 125 V
Switching Transistor IC - 40 A
PT- 140 W
For Switching Applications in
Industrial and Commercial Equipment TERMINAL DESIGNATIONS
The RCA-BUX20A is a silicon n-p-n power lators, and a variety of power switching
transistor featuring fast switching circuits.
speeds, low saturation voltage, and high
The RCA-BUX20A transistor is supplied in
safe-operating-area (SOA) ratings. It is
a steel JEDEC TO-204MA hermetic
specially designed for converters, in- package.
verters, pulse-width-modulated regu-
JEDEC TO-204MA
(See dimensional outline "A"_)

BUX20A
VCBO ....................................................... . 160 v
VCER(SUS)
RBE = 50Q .............................................. . 140 v
VCEO(SUS) ................................................... . 125 V
VCEX(SUS)
VBE=-1.5V ............................................ . 160 V
VEBO .......... _............................................ . 7 V
~ ........................................................... . 40 A
ICM ......................................................... . 50 A NOTE: CURRENT OERATING AT CONSTANT VOLTAGE
APPLIES ONLY TO THE DISSIPATION-LlMlTED PORTION
~ ......................................................... . 10 A AND IS/b-LiMITEO PORTION OF MAXIMUM-OPERATING
PT AREA-CURVES. 00 NOT OERATE THE SPECifiED VALUE
FOR Ie MAX.
TC'; 25'Cand VCE up to 24 v ............................... . 140 w
Tstg, TJ ...................................................... . -65ta +200 'C
TL
At distances", 1/32 in. (0.8 mm) from seating plane for 10 s max .... 230 'C 100
j
t
:tT
'0
100 125 150 175 200

CASE TEMPERATURE {Tcl~~C
Fig. 2 - Derating curves for ISlb and

dissipation .
.
·
I
~
~
,
a •h~ ,,""~~~v~
i '"
· ..
~
100
l~
~ .". ~.~
:•
~ ,
1\
f\ I"" ~ ......,
.I g ~, .~I
%
6 '10 6 8 LO~

, . r-....
6 810'
Fig. 1 - Maximum safe operating area. Fig. 3 - Thermal-cycling chart.
______________________________________________________________ 415
BUX20A
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 25"C
VOLTAGE CURRENT
CHARACTERISTIC BUX20A UNITS
Vdc Adc
VCE VBE IC IB Min. Typ. M8x.
ICEO 100 - - 0 - - 3
ICEV 160 -1.5 - - - - 5
rnA
TC=125°C 160 -1.5 - - - - 12
IEeO - -7 0 - - - 10
VCEO(sus)D 0.28 125 V
VCEX(sus)b
Re=50Q - -1.5 0.28 - 160 - -
L=2 rnH
VeE(sat)8
- - 20 2 - 1.3 1.5 V
- - 40 4 - 2.0 2.2
VCE(sat)8
- - 20 2 - 0.6 0.8
- - 40 4 - 1.8 2.5
2 - 20 - 20 - 60
hFE8
4 - 40 - 10 - -
ISlb 24 - - - 5.8 - -
A
t = 1 5, nonrepetitive 45 - - - .0.9 - -
fT 10 - 2 - 50 - - MHz
tON VCC - 20 2 - 0.45 0.7
tsC = - 20 2 - 0.6 1.5 I-'S
tfC 30 V - 20 2 - 0.15 0.5
ReJC 10 - 10 - - - 1.25 "C/W
aPIlIc:::cri; ~I_.r,?,=, ~·..!~2~!'.:'~ -:':: 2CC ,...:;, ~u!i :Q'::'~":'I ~ c.''to.
beAUTION: The sustaining voltages VCEO(SUS) and VCEX(sus) MUST NOT be measured
on a curve tracer.
CiS! = -IS 2 .
e COLLECTOR-TO-EMITTER VOLTAGE (VCE)~4V I~
'~i-J r--
a
p
4--- ,'L-t.J ~ ----
~ r\-
· ,V
w
z
---
• .•r:=Pff
~tOO
~
I"'- --
~
b 4 - ---:-L flltl.iUfl:(TC).~55.C
i~\oI.f'E
~
·
;
,~ I "1- .......
~
. . " ,R..
~
g
, • 8,
I , , " 00
COLLECTOR-lO-EMITTER VOLTAGE (VeE)-V 0·' BASE-TO- EMITTER VOLTAGE ("SE)- v
COLLECTOR CURRENT (IC1-A
92C$-'3031
Fig. 4· Typical output characteristics. Fig. 5 . Typical de beta characteristics. Fig. 6· Typical transfer character/sties.
416
----------------------________________________________ POWERTRANSISTORS
BUX21
Silicon N-P-N Switching Transistor Features:

VCEO - 200 V
IC -40A
For Switching Applications in
PT - 250W
RCA-BUX21 is a silicon n-p-n power tran- lated regulators. and a variety of power
sistor featuring fast switching speeds. low switching circuits_
saturation voltage. and high safe-operating- The RCA-BUX21 transistor is supplied in a
area (SOA) ratings_ It is specially designed steel JEDEC TO-204MA hermetic package_
for converters. inverters. pulse-width-modu-
JEDEC TO-204MA
BUX21 (See dimensional outline "An)
VCBO - 250 V
V CEO 200 V
VCEX
VBE ~ -1_5 V 250 V
VCER
RBE=I00n 240 v
V EBO 7 V
IC 40 A
ICM 50 A
'8 .
PT'
8 A
AtTc upta 25° and VCE upta 20 V 250 W

T J • T stg -65 ta +200 °c
TL
Ai distances ;>1116 in. (1.58 mml fram case far 10 sma •. 200 °c
CASE TEMPERATURE ITcl-·C
Fig. 2 '- Dissipation and 'SIb derating curve.
COLLECTOR-TO-EMITTER VOLTAGEIVCEI": v NUMBER OF THERMAL CYCLES
92CM-31448
Fig. 1- Maximum operating areas (TC = 25°C). Fig. 3 - Thermal-cycling rating chart.
417
BUX21
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC' = 2!t'C ~ IB~IC/IO

II
unless otherwise specified ~ 2.4
g
z
2
n
TEST CONDITIONS LIMITS ~
CASE TEMPERATURE iTC)Z-40 8 cl
CHARACTERISTIC VOLTAGE CURRENT 8UX21 UNITS ~l I..
I
Vdc Adc ~~
VCE V8E IC 18 Min. Typ. Max.
t:'W
~
~2:.
u "
\' 0.8
/'z,'C
leEO 160 - - 0 - - 3 ~
7
~
250 -1.5 - - - - 3
0.4---·
"
..
'./.. 125-C
leEV rnA
Te=125°e 250 -1.5 - - - - 12 10 100
COLLECTOR CURRENT(Icl-A
lEBO - -5 0 - - - 1 92CS-31"'3
VCEO(susl b - - 0.2 8 - 200a - - V Fig. 6 - Typical collector-to-emitter saturation

voltage characteristics.
V(BR)EBO IE = 0.05 A - - 0 - 7 - -
1.2~~
- - 25 a 3 - 1.2 1.5 V
VBE(satl ~
~ ~
- - - g I
VeE(satl
- -
128
25a
1.2
3 -
0.2
0.7
0.6
1.5
z
2> T.J~ ~
:tuRE\"'(C~ 9 j
~.:l:. h •• D{
O.B
"'(ElAtR/I.: ~
2 - 128 - 20 .- 60
~~
r-- c&to.SE ___ / ",' c.
hFE 4 - 258 - 10 - -
~lO.6 1----- ./?
ISlb 140 - - - 0.15 - - A ~
?
fT
t = 1S, non repetitive 20 - - - 12.5 - -
~
~
0.4'--
---
f=10MHz
Vee =
15 -
- 25
2 -
3 -
8 -
0.3 1.2
- MHz 02
, .. ti a I
COLLECTOR CURRENT (1cl-A
10
, ., , , . 60
ton 100V
Fig. 7 - Typical base-ta-emitter saturation voltage
ts Vr.r. =
iiBl = iB2i
- ,~ :: - i.v i.a
100V
/1s
tf
Vee=
(lBl = 182) 100V
- 25 3 - 0.2 0.4
ROJe - - - - - - 0.7 °e/W
8 Pulsed, pulse duration = 300 IlS, duty fattor ~ 2%.

b CAUTION: Sustaining Voltages VCEO(susl MUST NOT be measured on a curver tracer.
400 ~~~~;;~OA - TO -EMITTER VOLTAGE COLLECTOR CURRENT (1cl- A
Fig. 8 - Typical small-signal forward-current trans·

~ :2 II I fer ratio characteristics.
~! .~t:~lcA~l,s:E=TE=M=PE~lR=M=u:RE:(ttC~I.~I~~5.~C~====+===~
100
··
40
~ CASE TEMPERATURE (Tcl z 2!S·C
E~ 2" i"'-
~~
, ..10. ~
I 1 r--- f" 0.1
··
Ii' 10
g ~ 20 0.0
0.01
Z 468 :2 468 2 "66 2 4 68
, ~ I!S 0.'
0.001 0.01 0.1 I 10 0.' 10 40
PULSE WIDTH (tpl - $
COLLECTOR CURRENT Clel - A :l 10 02
9tCS-:St",,:? 8
BASE CuRRENT (I 1 zO.1
Fig. 4 - Typical thermal-response characteristic. Fig. 5 - Typical de beta characteristics.

10 14 16 20
COLLECTOR-TO-EMITTER VOLTAGE (VCEI- V
92CS-JI45&
418 ________________________________________________________________________
POWER TRANSISTORS
BUX21
t 10. ~:~iC~~~PERATURE (Tc'-125-C
I 6 le,-182 Vee· SOY
~
COLLECTOR CURRENT IIel - A 92eS-514S?

Ii
iii:
,---
0.1
10
I,
If
15 20
COLL.ECTOR CURRENT IICI-A
-- 25
92CS-:51451
30 51015Z02!53035
COLLECTOR CURRENT IICI- A 92CS-S1460
Fig. 10 - Typical clamped tUrn-off time Fig. 11 - Typical saturated-switching-time Fig. 72- Typ;cal-switching-time characteristics at
characteristics. characteristics as a function of
TC = 1250 C as a function of collector
collector current. current.
A 10%
'lei. A-B t.. x-v 9ZCS-30301RI

t,-a-c tt-Y-Z
.....sition. X-W
4 6 B 10 4 6 8100 400
COl.LECTOR-TO-BASE VOLTAGE (YC81-V OR 10% Ie IPEAK) FROM 90"4181 TO scw.1~ MUST
EMITTER-TO-BASE VOLTAGE (VEB1-V
92CS·:S1459 92CS·:SO:589RI BE LESS THAN O.6I'L
Fig. 73 - Typical common-base input {Cibol or Fig. 14 - Oscilloscope display for normalized Fig. 15 - Phase relationship between input and
output {Cobol capacitance measurement of clamped inductive output currents showtng reference
characteristics. switching time (tcJ- points for specification of switching
times.
QI, Q2 '" 2N6354

Q3 ~ 2N3762
D2540M
Q4,Q5,
Q6,Q7 : CA3725 QUAD
TRANSISTOR
ARRAY.
oM THIS CONNECTION
SHOUL.D BE MADE AS
..
CL.OSE AS POSSIBL.E TO
COL.L.ECTOR OF
0.005 JJ.F
...... KEL.VIN SENSING
24n CONNECTION
NOTE· BATTERY SYMBOLS Vcc. VBI. VB2'
2g~~
VS(CL.AMP) .INDICATE RIGOROUSLY FILTERED
TO ACCOMODATE THE FAST I, AND tf TIMES
W- 20 • S .on -
.,N VS2
AOJ FOR IS2
NOTE, SWI CLOSED FOR t" Is. If. SWI OPEN FOR tc·
92CM-31462
FREQ- 500 Hz
________ ~ _________________________________________________________ 419

BUX31, BUX31A, BUX31B
4-A Switch Max Power Transistors Features:

• 100% High- Temperature Tested for 100° C
High Voltage N-P-N Types for 240 V Off-Line Parameters
Power Supplies and Other High-Voltage • Fast Switching Speed
Switching Applications II High Voltage Ratings:
VCEX = 450 - 550 V
The RCA-BUX31 Switch Max series of per-cent tested for parameters that are • Low VCE(sat) at 'C = 4 A
silicon n-p-n power transistors feature essential to the design of industrial high- • Steel Hermetic TO-204MA
high-voltage capability, fast switching power switching circuits. Switching times, Package
speeds, and low saturation voltages,
together with high safe-operating-area including inductive turn-off time, and'
(SOA) ratings. They are specially designed saturation voltages are tested at 100° C, as Applications
for use in off-line power supplies and are well as at 25°C, to provide information
necessary for worst-case design. • Off-Line Power Supplies
also well suited for use in a wide range of
inverter or converter circuits and pulse- The BUX31-series transistors are supplied • High-Voltage Inverters
width-modulated regulators. These high- in steel JEDEC TO-204MA hermetic pack- • Switching Regulators
voltage, high-speed transistors are 100- ages.

BUX31 BUX31A BUX31B
C
VCEV E· (FLANGE)
VBE = -1.5 v ...................................... . 800 900 1000 V
VCER
RBE:S 10 0 ........................................ . 800 900 1000 V
VCEX (Clamped)
VBE = -1.5 V ....................................... . 450 500 550 V
VCEO .............................................. .. 400 450 500 V
VEBO ............................................... . 8 V
'd sat) ............................. , ................ . ________ 84 A 92CS-34134
'C·· .. ···· .... · .... ··· ...... ·· .. ···· .. · .. ··· .. ··· .... · A
_-'-_ _ _ 10 _ _ _ __
'CM ·················································· _ _ _ _ _ 4 A
A (See dimensional outline ncc")
'B····················································
PT
______ 150
~~~WC ...................................... . W
T r- above 25° C. rip-ratA IinpRrlv ~ .0 ~A!/O ':
TJ - .......................... : ....................... . _ _ _ -65 to 175 °c
Tstg " ............................................... . _ _ _ -65 to 200 °c
TL
At distance ~ 1/16 in. (1.58 mm) from z
_ _ _ _ _ 235 _ _ ___
seating plane for 10 s max .................. , ..... '" °c ·a «
125
~!OO
~
g 7~
.0 ~
~'50
"
o
o " ~ • ~ ~ ~
CASE TEMPERATURE !Tc1--C
m =
92CS-120",,2
1 Fig.2 - Dissipation derating curve

!:!" for all types .
...z
...
~ TJ (MA,X.j·200·C
""
,
··rr-..s
I
• I
~
f\ '\ ~.~
z
· ~r",
a
" g
~
\ '\ ~~
~~
I\~~~ \ ~ ~"i
"
" ,
~
I---
~
10
. , .
10'
..'" ,, 810~
,
, I •
92CM-33446
Fig.1 - Maximum operating areas for all types IT C 1. Fig.3 - Thermal-cycling chart for all types.
420 ____~------------------____--------------------------------_________
BUX31, BUX31A, BUX31 B

Characteristic Voltage Current BUX31 BUX31A BUX31B Units
V dc Adc
VCEIVBE IC I IB Mln·IMax. Min.1 Max. Min·IMax.
aDo -1.5 - 0.1 - - - -

ICEV 900 -1.5 - - - 0.1 - -
1000 -1.5 - - - - - 0.1
ICER
RSE::010O
aDo
900
-
-
0.2
-
-
-
-
0.2
-
-
-
-
mA
, .
COLLECTOR CURRENT (Ie \- A
,
92CS- 32045
1000 - - - - - 0.2 Fig.6 - Typical collector-fo-emitter saturation

IIESO -a 0 - 2 - 2 - 2 current for all types.
VCEO(sus)b 0.2a 0 400 - 450 - 500 - V
hFE 3 4 a 40 a 40 a 40
VSE(sal) 4 o.a - 1.3 - 1.3 - 1.3
VCE(sal)
4 o.a - 1 - 1 - 1
a 2 - 2 - 2 - 2 V
VCEX b
(Clamped ES /b ) -5 4 O.Se 450 - 500 - 550 -
L = 170 pH
ISlb 30 5 1 - 1 - 1 - s
IhlJ 1=5 MHz 10 0.2 3 12 3 12 3 12
IT 10 0.2 15 60 15 60 15 60 MHz .. "6 8 10
COLLECTOR CURRENT (I C I-A 92CS-l2046
Cabo 1-0.1 MHz 10 c 50 250 50 250 50 250 pF

Fig.7 - Typical base-to-emitter saturation
Idd 4 o.a - 0.1 - 0.1 - 0.1 voltage as a function of collector
Ird 4 o.a - 0.45 - 0.45 - 0.45
Isd 4 O.a e - 3.0 - 3.0 - 3.0 COLLECTOR- TO -EMITTER
lid 4 O.a e 0.4 - 0.4 - 0.4 VOLTAGE ,vCEi"V I

Ic ps _40*C
VCC=250V,
L=170 pH,
4 O.a e - 0.4 - 0.4 - 0.4
RC = 500
Colleclor clamped
10 VCEX
OJ
2 4 6 10
COLLECTOR CURRENT (Icl-A 92CS-32041
Fig.S - Typical base-to-emitter voltage as a

function of collector current for all
types.
10,
'1-- +-+-- - ..- -- '- ~ ! ~~t~~~~O(~~TE~~ ~MJTTER 8 CASE TEMPERATURE ITc I- Z!5-C
'r---+-Ht-+--+-t+I-+++++- -- Q 'f--I
2\£5·C---
--f-
..-c-
~IO ~ . c-
_./.
~ :~--
:;
,00
,t--t-t·nwC-·+++--I-+·+t+-+-+-rrl ~ 2 ~ lE~p.~:~~
'1108~\lC)
,-_.t1tt.-i
Ol~,~_:i=. . ::-:.t-ii:~t:-prtl=l~=_l=Itl
, ~ q-- r--
.-,--- ---f- ~ 4f----J--·-- --t- -f--
,_. i , f---+-f-·I++--I- t-
.
-
- f- g
680,012 4 6~_1 .. 468, .. 4 6 8 10 0.1 I 10 " 100 10
PULSE WIDTH ITpl-S 92CS-32043 COLLECTOR CURRENT lIe I-A 92CS-3204" COLLECTOR - TO' EMI TTER VOLTAGE (VCEI- v 92CS"2048RI
Fig.4 - Typical thermal-response chara- Fig.5 - Typical dc beta characteristics for all Fig.9 - Typical output characteristics
ter;stic for all types. types. for all types.
421

ELECTRICAL CHARACTERISTICS (Continued)
Characteristic Voltage Current BUX31 BUX31A BUX31B Units
V de A dc
VCEIVBE IC I IB I I
Min. Max. Min. Max. Min. Max. I
Te-- 1000 e
800 -1.5 - 1 - - - -
ICEV 900 -1.5 - - - 1 - -
1000 -1.5 - - - - - 1
mA
ICER 800 - 3 - - - -
RBE:5100 900 - - - 3 - - COI,.lECTOR CURRENT l:Ie I-A
1000 3 Fig. 10 - Typical saturated switching time

VCE(sal) 4 0.8 - 1.5 - 1.5 - 1.5 V
Ird 4 0.8 - 0.6 - 0.6 - 0.6
ts d 4 0.8 e - 4 - 4 - 4
ltd 4 0.8 e - 0.7 - 0.7 - 0.7
flS
Ic
VCC=250V,
L=170 flH,
RC = 500
4 0.8 e - 0.8 - 0.8 - 0.8
Colleclor clamped
to VCEX
10 5 1.0 1.0 1.0 loC/W I CURRENT (r e I-A
apulsed: pulse duration = 300 I'S, duty factor :52%. CVCsvalue. Fig.ll - Typical saturated switching time
bCAUTION: The sustaining voltage VCEdsus) and dV CC=250 V, tp=20 I'S.
VCEX MUST NOT be measured on a curve tracer. eIS,= -IS 2 ·
I D:!fASE
,,_ta" "
TEMPERATURE (Tcl-ZS·
fREQUENCY' (f)-UoItU
1TCI-1OO"'C &~ 'F:::::::: cj'o

tB 2
=r-----
-
oZI03
~~
f~ 4
~5
u~
~~
~~
, _COb,
~Blot --. --
WW
~~
8
"- f=. .- -- :- ~-
~~ 4
z~
... ..
112
s!L'
10
. " 8 10
, 10 2
COLLECTQR-TO-BASE VOLTAGE (VCB1-V
CA EMITTER-TO-bASE VOLTAGECVESI-V
, , 10 3
92CS-320S4
COL :Em CU RENT ~IC '-A 92CS-l344ro

Fig.14 - Typical common-base input or output
COLLECTOR CURRENT I :IC)-A
Fig.12 - Typical saturated switching time Fig.13 - Typical saturated switching time capacitance characteristics as a
characteristics for all types. characteristics for all types. function of collector· to· base voltage
or emitter-to'base voltage lor all types.
IS, --,----------::X"" 90 ....

VCEORATING
i 7 V,oov A 10%
';6
!:!
:... ~
::!4
il
I CLAMPED "'"
g'" 3 Tes IOO·C I VCEX RATlNG'-
Ii:... 2
I
...
0'
u OL-__________________ - L__ 92CS-3045e
10"10 Ie IPEAK)
COLLECTOR-TO-EMITTER VOLTAGE 92CS-334!51
Fig.17 - Phase relationship between input and
Fig. 15 - Maximum operating conditions for Fig. 16 - Oscilloscope display for measure- output currents showing reference
switching between saturation and ment of clamped induction switching points for specification of switching
cutoff. timeltc l. times,
422

Ie Rl R2 VCEX CLAMP
15 A 115 U 115 H ICLAMPEDVCfX RATING I
5WI
01, Q2 "2N6354
Q3 " 2N3762
Q4,05,
06,Q7 :: CA3725 QUAD
TRANSISTOR
ARRAY.
*THIS CONNECTION
SHOULD BE MADE AS
COLLECTOR OF
** CONNECTIONS
KELVIN (SENSING)
NOTE: BATTERY SYMBOLS Vee. VBI. Val_

~50JJ.F VS(CLAMP) INDICATE RIGOROUSLY FILTERED
2g:TL~ TO ACCOMOOATE THE FAST t, AND 1f TIMES

i..L 20 • 5 50 n =
VB2 NOTE: SWI CLOSED FOR tr. t •• If. SWI OPEN fOR te:.
MI" ADJ. FOR IS2
FREa~ 500 Hz
92CM-32103
Fig.18 - Circuit for measuring switching times.
423

Features:
6-A Switch Max Power Transistors • 100% high-temperature tested for 100" C
High-Voltage N-P-N Types for 240 V Off-Line parameters
Power Supplies and Other High~Voltage • High voltage ratings:
Switching Applications VCEX=450-550 V
• Low VCE(sat) at IC=6 A
The BUX32 Switch Max series of silicon tested for parameters that are essential to • Steel hermetic TO-204MA package
n-p-n power transistors feature high- the design of industrial high-power
voltage capability, fast switching speeds, switching circuits. Switching times,
and low saturation voltages, together with including inductive turn-off time, and Applications:
high safe-operating-area (SOA) ratings. saturation voltages are tested at tOO'C, as • Off-Line power supplies
They are specially designed for use in off- well as at 25'C, to provide information • High-voltage inverters
line power supplies and are also well suited necessary for worst-case design. • Switching regulators
for use in a wide range of inverter or .The BUX32-series transistors are supplied
converter circuits and pulse-width- in steel JEDEC TO-204MA hermetic
modulated regulators. These high-voltage, TERMINAL DESIGNATIONS
packages.
high-speed transistors are tOO-per-cent
BUX32 BUX32A BUX32B
VCEV
vBE=-1.5 V ........................•................ 800 900 1000 V
vCER RBE::; 10 n .................................. . SOO 900 1000 V
VCEX (Clamped) 92CS-34134
VBE=-1.5 V ..•..•.........•..........•••.•...••••... 450 500 550 V
VCEO···································· .. ······ .. .. 400 450 500 V
JEDEC TO-204MA
VEBO .............................................. .. 8 V
IC(Sat) ............................................. .. 6 A (Se. dlmenalonal ouliine "CC".)
IC·· .... ·· .. ······ .... ······•·····•· .. ·· .. ···•·····• .. 8 A
ICM······ .... ···· .. · .. ········· .. ···•···· .. ······· .. • 10 A
4 A
IB .... ·· .. •··· .. ··· .. ··· .. ···· .. ·· .. ·.··············• ..
PT
TC up to 25·C .................................... ..
T_ ............ _ ,''11::0,... ....
_~_ .. _ ,,----.
' v __ ........ _ ........ , .............. ''''';;iUlty •••••••••• , •••••••••••
150
I.U
W
Wl"(;
III I 1111111 I
_ _ _ -65 to 175 _ _ _ _
TJ ................................................. .. 'c
Tstg .. ·· .. ····•···· .. · .. ·· .... ·•···· .. ······ .... ···· ..
Tl
--- -65 to 200 _ _ _ 'c
At distance <i; 1/16 in. (1.58 mm) from _ _ _ _ 235 _ _ _ __
seating plane for 10 s max. ·C
1j (MAlO-200·C
,
~I
1 • ~f-
~ I\. ~'"
~ 1\'\ ~..,.:....>
i
ii6
4
\ '\ rf'R,.
~ ~
I~~~~. .~ Ii
c
~ 2 I--
I.
8'0·
, . 8'0'
,
8
~,
8, 8
,lC9-l0458
,2C"-33404
Fig. 1 - Maximum operating areas for all types ( TO). Fig. 3 - Thermal-cycling chart for all types.
424 ________________________________________________________ ~ _________

- - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS

BUX32 BUX32A BUX32B UNITS
TERISTIC V de Ade
VCE!VBE IC ! IB Min.! Max. Min.! Max. Mln.!Max.
TC-25'C
800 -1.5 - 0.1 - - - -
ICEV 900 -1.5 - - - 0.1 - -
1000 -1.5 - - - - - 0.1
rnA
ICER
800 - 0.2 - - - -
RSES10n
900 - - - 0.2 - - 0.00114680012 46lQ.1 2 "
PULSE WIDTH ITpl-S
68 , 2 4 6 ° ,0
1000 - - - - - 0.2
IESO -8 0 - 2 - 2 - 2
VCEO(sus)D 0.2a 0 400 - 450 - 500 - V
for all types.
hFE 3 6 8 40 8 40 8 40
VSE(sat) 6 1.2 - 1.3 - 1.3 - 1.3
6 1.2 1 1 1
VCE(sat)
8 2 - 2 - 2 - 2
V
VCEX b
(Clamped ES/b) -5 6 1.2e 450 - 500 - 550 - z
L=170 ",H ~ 2t~~.S~'~,-~~i~~~~yJ~~~~~~~~-r~-r--~-H
30 5 1 - 1 - 1 - s '7 IOer::-:-:-nc •
IS/b ~ ,
Ihle I 1=5 MHz 10 0.2 3 12 3 12 3 12 ; 4~_r~-+-Hr--H~~~~-r--~_H
.,.
IT 10 0.2 15 60 15 60 15 60 MHz
g
Cobo 1=0.1 MHz· 10 e 50 250 50 250 50 250 pF
0.1 I 10 100
tdd 6 1.2 - 0.1 - 0.1 - 0.1 COLLECTOR CURRENT lIe I-A 92CS-32044
t rd 6 1.2 - 0.45 - 0.45 - 0.45

t sd 6 1.2e - 3.0 - 3.0 - 3.0 Fig. 5 - Typical de beta characteristics for all
types.
tid 6 1.2e - 0.4 - 0.4 - 0.4
tc
Lo
2 IBs1c/5
",s 0
<
VCC=250 V,
~
L=170 ",H,
6 1.2e - 0.4 - 0.4 - 0.4
z
0
I $ I~-r-
RC=50 n ~ " VIV,t I-
Coli ector clamped ~b 6 ~~C' -I-
<-
to VCEX ~~4
TC-100 C
,
800 -1.5 - 1 - - - -
a~
~
~~~'~ I
ICEV
ICER
900
1000
800
-1.5
-1.5
-
-
-
-
-
3
-
-
-
1
-
-
-
-
-
-
1
-
rnA
~ 2
~
u 0.1
:;~ ~
,
l . I
92CS.3204~
10
900 - - - 3 - - COLLECTOR CURRENT1IC1-A
RSE S 10 n Fig. 6 - Typical collector-to-emitter saturation
1000 - - - - - 3 voltage as a function of col/ector current for all
VCE(sat) 6 1.2 - 1.5 - 1.5 - 1.5 V types.
tjd 6 1.2 - 0.6 - 0.6 - 0.6
tsd 6 1.2e - 4 - 4 - 4
tid 6 1.2e - 0.7 - 0.7 - 0.7
tc
",s
VCC=250 V,
L=170 ",H,
6 1.2e - 0.8 - 0.8 - 0.8
RC=50 n
Coliector clamped
to VCEX
IROJC 10 5 1.0 1.0 1.0 I'C/W I 01

I 2 .. 6 It 10
COLLECTOR CURRENT II C}-A 92CS-l2046
apulsed; pulse duration=300 J.Ls. duty factor:=; 2%. eVC8 value.
bCAUTION: The sustaining voltage VCEolsusl
Fig. 7 Typical base-la-emitter saturalion
dVCC=2S0 V. tp=20 I's.
and VCEX MUST NOT be measured on a curve tracer. eI 8 ,=- 182'
voltage as a function of collector current for aI/
types.
_____________________________________________________________________ 425
OJ
,
COLLECTOR
..
CURRENT (I.e J-A
10
COLLECTOR-TO-EMITTER VOLTAGEIVCE)- V COLLECTOR CURRENT (I.e )-A
92CS-lI204eRI
Fig. 8 Typical base-to-emitter voltage as a Fig. 9 - Typical output characteristics for aI/ Fig. 10 - Typical saturated switching time
function of collector current for all types. types. characteristics for aI/ types.
~'II
!
I
COLLECTOR CURRENT (:tel-A
. '2C'~ 33406
'-A
3
COLLECTOR CURRENT I :tel-A
Fig. 11 - Typical saturated switching time Fig. 12 - Typical saturated switching lime Fig. 13 - Typical saturated switching time
characteristics for all types. characteristics for a/J types. characteristics for all types.
Ie R, R2 VCEX CLAMP
to .. • '10 2 .. 6 8102 2 15 A 115 nilS n !CLAMPEDVCEX RATING I
COLLE~-TO-BASt VOLTAGE (Vcal-Y
CR EMITTER-TO-BlSE \Q..1AG[IVES1-V
Fig. 14 - Typical common-base input or output

capacitance characteristics as a function of
col/ector-to-base voltage or emitter-to-base
QI, Q2 "2N6354
voltage for aI/ types. 03 • 2N3162
04,05,
81-------. O.OOIp.F OG,07 = CA3725 QUAD
TRANSISTOR
VCEORATING
""7 ARRAY.
I MI~ 100V
~8 *THIS CONNECTION
!:! SHOULD BE MADE AS
...lEG COLLECTOR OF
~4 0.005 p.F
a. 2. n ** CONNECTIONS
kELVIN (SENSING)
er ~ I CLAMPED I
:;! TCS 100'C I vCEX RATING/' NOTE; BATTERY SYMBOLS Vee, VBI' "B2'
~2 I 'f 50 I'F
"BtClAMP) INDICATE RIGOROUSLY FilTERED
80L-_______
I
~
I
I ________ ~
2g~~
LL 20pS son =
TO ACCOMODATE THE FAST Ir AND tf TIMES
NOTE: SWI CLOSED FOR It. Is. If. SWI OPEN FOR te·
MIN
FREO" 500 Hz
92CM-32105
RCS-!3409
switching between saturation and cutoff. Fig. 16 - Circuit for measuring switching times.
4a __________________~--------------------------------------------
POWER TRANSISTORS
XBI -,..------;:X"-90%
A 10%
o --------- ------
lcI-A-B
I,·S-C
ls-x-v
It- Y- Z
lTRANSITION" x-w
FROM go", IB1 TO 90% ISz
MUST BE LESSTHANO.3111.
10 ... Ie (PEAKI
92CS-30389RI
Fig. 17 - Oscilloscope display for measurement Fig. 18 - Phase relationship between input and
of clamped induction switching time (t c )' output current showing reference points for
specification 01 switching times.
______________ ~ ______________________________________________________ 427

POWER TRANSISTORS _ _ _ _~------------------------
BUX37
15-Ampere N-P-N Monolithic Darlington Features:

Power Transistor capability
Applications:
400 V ,35W • Power switching
Gain of 20 at 15A • Solenoid drivers
• Automotive Ignition
The RCA-BUX37 is a monolithic n-p-n device provides good forward and reverse
silicon Darlington transistor designed for second-breakdown capability.
automotive electronic power applica- The RCA-BUX37 is supplied in the steel TERMINAL DESIGNATIONS
tions. The pi-nu construction of this JEDEC TO-204MA hermetic package.

VCEo(sus), . . . . . .. . . . . . . .. . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . 400 v
VE80................................................... 7 V
IC...................................................... 15 A
18 ................................................... i... 4 A
PrTC~ l00'C ............................................ 35 W
JEDEC TO·204MA
T C > 100"C. . . . . . . . . .. . . . . .. . ... . .. . .. . . . . . . . . . . . . . .. . . . Derate Linearly 0.7 wl'e (See dimensional outline "A".)
Tstg • TJ ................................................. -65 to 150 'e
TL
At distances ~ 118 in. (3.17 mm) from case
for 10 s max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235 'e
-----------,
I
I
I
I
I
I
Fig. 2- Schematic diagram for a/l types.
50
C.OLLECTOR - TO-EMITTER VOLTAGE (VeE )-V

25 50 15 100 125 150 175 200
92CM-32799
CASE TEMPERATURE (TC 1- OC 92CS-32798
Fig. 1- Maximum operating areas

(Tc= l00·C). Fig. 3-Derating curve.
428 _____________________________________________________________________
BUX37
ELECTRICAL CHARACTERISTICS, at Case Temperature (T C) 25°C

VOLTAGE CURRENT
CHARACTERISTIC SUX37 UNITS
Vdc Adc
VCE VSE Ic IS Min. M8x.
ICEO 400 0 - 0.25 mA
VCEO(sus)D L - 1.5 mH 58 0 400
I V(BR)EBO
0 7 - V
IE = 50mA
hFE 5 158 20 -
VBE(sat) 108 0.15 - 2.7
TC = -40'C 108 0.15 - 3.5
V
VCE(sat) 78 0.07 - 1.5
108 0.15 - 2
TC = -40'C 108 0.15 - 2.9
ROJC - 1.5 'C/W
a Pulsed; pulse duration = 300 ~s, duty factor <;2%.
02 COLLECTOR CURRENT (Iel-50 Ie

r-----wo-r-------- -
015
, I
1\ 1'- II ~
'1\1"
CASE-TEMPERaTURE
CHANGE Ct.'lTc l ' 50·C
z 01
~
NI\ I a
'I-- ~
I-- >~
1\ ".( ·005
I ;.'
.1~5i~r Ni'."
I?g
00
"l"1-.1 i
" "" 05 1
BASE-lO-EMITTER VOLTAGE {VBE)-V COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
~2CS-28~4~
Fig. 4- Thermal-cycling rating chart. Fig. 5- Typical input characteristics. Fig. 6-Typlcal output characteristics.
1
BASE-TO-EMITTER VOLTAGE (VBEJ-V
Fig. 7- Typical output characteristics, Fig. 8- Typical transfer characteristics.
429
BUX39
Features:
High-Current, High-Speed High-Power • Maximum area-of-operation curves for
Silicon N-P-N Transistor de and pulseoperatlon-IS/b lIinlt
begins at 25 V
• Fast tum-on- time - 1 "s at Ie = 15 A
For Switching and Amplifier Applications in
• High-current capablllty-
Industrial and Commercial Service
hFE. VeE(sat), VBE(sat) measured at
Ie = 10 A
The RCABUX39 is an epitaxial silicon switching circuits converters, inverters,
n-p-n power transistor that has high cur- control circuits. Other recommended ap-
rent and high power handling capability plications include dc-rf amplifiers, and TERMINAL DESIGNATIONS
and fast switching speed. power oscillators.
This device is especially suitable for The BUX39 is supplied in a steel JEDEC
switching-control amplifiers, power TO-204MA hermetic package.
gates, switching regulators, power-

VCBO······· ................................................... . 120 v
vCEX JEDEC TO·204MA
VBE = -1.5V .................................................. . 120 v
VCER (5.. dlmen.lonal oullln. "A".)
RBE = 10011 ..........•.......•................................. 110 v
VCEO(SUS) .....................•.....•.. - ....................... . 90 v
VEBO·················································· ........ . 7 V
IC ......•............................•.......................... 30 A
ICM··················································· ......... . 40 A
IB .•............................................................ 6 A
Pr
TC :;;25'C ...................................................... . 120 w
TC ;,,25'C, derate linearly ......................................... . 0.68 W/'C
Tstg, TJ ••...•.....•............................................. -65 to 100 'C
T.
At distance;" 1/32 In. (O.B mm) from seating
plane for 10 s max .............................................. .. 230 'C THERMAL FATIGUE INSPECTION
Pulsed Test:
"on": 2 minutes at 56 watts Pr
"off": 1 minute at 56 watts Pr
TC = 125'C max .
.iTC = 50'C max.
TJ = 175'C max.
NOTE; CURRENT DERATING AT CONSTANT VOLTAGE APPLI£S

ONLY TO THE DISSIPATION-LIMITED PORTION AND ISlb
LIMITED PORTION OF MAXIMUM-OPERATING~AREA CURVES.
DO NOT DERATE THE SPECIFIED VALUE FOR Ie MAX.
25 50 75 100 125 150 175 200
COlLECTOR-TQ-EMITTER VOLTAGE (VCE)- V CASE TEMPERATURE (Tcl-·C

92CM-32231
Fig. I-Maximum operating areas. Fig. 2-Derating curves.
430 _____________________________________________________________________
BUX39
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) 25"C unless COLLECTOR-TO EMITTER VOLTAGE ("eEl- 4\1
otherwise specified
TEST CONDITIONS
VOLTAGE CURRENT
LIMITS
CHARACTERISTIC V de A de
r-,-,--r-:-:--t-:...:....::;=-,--t--,-.---.----l UN ITS
ICEO 70
rnA
120 -1.5 1
120 -1.5 5 0.01 2 .. 68 0 .1 2 .. 68 1 2 .. fi 810 2 ..
lEBO -5 o
Fig. 3- Typical DC beta characteristics.
VCEO(SUS)a' L = 25 rnH 0.2b 0 90
v
V(BR)EBO O' 7
IE= 50 rnA
4 12b 15 45
hFE
4 20b 8
VBE(sat) 20b 2.5 2.1 2.5
v
12b 1.2 0.7 1.2
VCE(sat)
20b 2.5 - 1.25 1.6
45 1
ISlb t = 1s A
30 4
IT 15 8 MHz
tON VCC= 20 2.5 0.8 1.5
r-----------~ 30V
ts 20 2.5c - 0.55 1 P.s
tl 20 2.5 c 0.15 0.3

ROJC - 1.46 °C/W
a CAUTION: The sustaining voltage VCEO(sus) MUST NOT be measured on a curve tracer.
b Pulsed; pulse duration" 300 ~s, duty factor" 2%.
C 181 = - 182'
COLLECTOR-lO-EMITTER VOLTAGE (VCEI-V
Fig. 5- Typical transfer characteristics. Fig. 6-Typical output characteristics.
______________________________________________________ ~------------_431
POWER TRANSISTORS _ _ _--.,...._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _-'-_ _ _ __
BUX40A
Features:
High-Current, High-Power, High-Speed VCEO - - 125 V
Silicon N-P-N Power Transistor Ie - - 20A
Pr --120 W
The RCA·BUX40A is an epitaxial silicon cuits, such as converters, inverters, swit· TERMINAL DESIGNATIONS
n·p·n transistor having high·voltage and ching regulators, and sWitching·control
high-current capabilities and featuring amplifiers.
fast·switching speed at low saturation The RCA·BUX40A is supplied in a steel
voltage. It is especially suitable for con· JEDEC TO·204MA hermetic package.
trol amplifiers and power·switching cir·
JEDEC TO·204MA
MAXIMUM RATINGS, Absolute-Maximum Values;
BUX40A (See dlmenllonal outline "A".)
VCBO··· ...............•..•......•.............................. 160 V
VCER
RBE = 10011 ................................................... . 150 V
VCEO ...•..•.....•...•..•.......•............................... 125 V
THERMAL FATIGUE INSPECTION
VCEX
VBE = -1.5V ................................................ .. 160 V Pulsed test:
VEBO························ ............•...•............•.•... 7 V 20,000 cycles
IC .•........•....•.............••.......••......•..•..........•. 20 A "on": 2 minutes at 56 Walls Pr
28 A "off": 1 minute at 0 Walls Pr
'CM .. ··· .. ·· .... · .. · .... ·· .... ·· .. · .. ·· .. ·· ...... ··· .... •···· .. · TC = 125'C max.
IB ..................................•........•........•..•..•... 4 A 6TC = 50'C max.
Pr: TJ = 175'C max.
At TC s25'C ........••..•...............•..........•.......•... 120 W
At TC >25'C derate linearly ..................................... . 0.69 W,.C
Tstg, TJ ............•...............•............................ -65 to +200 'C
TL
At distances", 1/32 In. (0.8 mm) from seating plane
for lOs max .•....••...•......•......•.•................•....... 235
!!NOTE:CURREHT DERATING" AT CONSTANT VOlTAGE
APPI..IES ONLY TO TtE DlSSIPATION-LiMITED POATJON
AND IS/b-LIMlTED PORTION OF MAXlIIIUM-~R4T1NR
IV'It.A-I;UKVU. 00 NOT DERATE THE SPECIFIED \lll,UlE
FOR Ie MAX.
2S 50 7!S 100 125 I!!O I T5 zoo

Fig. 2-Deratlng curves for ISlb end

dissipation.
COLlECTOR-TO-EMITTER VOLTAGE 'VeE 1." V
240
200
S:-W
~~J60 .,~~
~Q
u~
i~ 120 1--,- ..~..~
,,' "-
J~
I--~;''''
~i
g~
80
I-~'b' V
40
V
-
00'
::.-!--
, . ..., , . .. , , ...
COLLECTOR CLJRRENT lICI-A
, .
92CM- 3236~
Fig. 1-Maxlmum safe-operating areas (Tc = 25·Cj. Fig. 3-Typical dc beta characteristics.
432 ____________________________________________________
POWER TRANSISTORS
BUX40A
ELECTRICAL CHARACTERISTICS, A T Case Temperature (TC) 25°C Unless
Otherwise Specified
VOLTAGE CURRENT
CHARACTERISTIC BUX40A UNITS
Vdc Adc

ICEO 100 0 - - 1
ICEX 160 -1.5 - - 1

rnA
TC = 125'C -1.5 - - 5 BASE-TO-EMITTER VOLTAGE NBEI-V
lEBO -5 0 - - 1
VCEO(SUSP 0.2a 0 125 - - V
V(BR)EBO
IE = 50 rnA
0 7 - -
4 10a 15 - BO
hFE
4 158 8 - -
VBE(S8t) 158 1.BB - 1.3 2
10a 1 - 0.3 1.2 V
VCE(sat) 158 1.BB - 0.5 1.6
fT 15 1 B - - MHz
ISlb 50 1 - - A
t = 1 5, nonrepetitive 30 4 - - COLLECTOR-TO-Et.lITTER VOLTAGE (VeEI-V
tON 15 1.8B - 0.6 1.2 Fig. 5- Typical output characteristics.

VCC
ts IB1 = IB2 30 V 15 1.BB - O.B 1 /lS
tf IB1 = IB2 15 1.8B - 0.15 0.4
RoJC - - 1.46 'C/W

a Pulsed; pulse duration = 300 ~s, duty factor s 2 %.
b CAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer.
Fig. 6- Typical transfer characteristics.
CASE TEMPERATURE (TC \-2''"C

COLLECTOR SUPPLY VOLTAGE (VCC)-3O v
Ie"Ie/S
t,
\0 \, '. ,0
COLLECTOR CURRENT (Ie I-A COLLECTOR CURRENT {Ie I-A 192CS-32359
COLLECTOR CURRENT (:IC)-A 92CS-323t1T 92CS-32338
Fig. 7- Typical base·to-emitter saturation Fig. 8- Typical col/ector·to-emitter saturation

voltage characteristIcs. voltage characteristics. Fig. 9- Typical switching time characterIstics.
_____________________________________________________________________ 433
BUX41, BUX41N
Features:
High-Current, High-Power, High-Speed BUX41 BUX41N
Silicon N-P-N Power Transistors VCEO-- 200 V 160 V
IC 15A 18 A
The RCA-BUX41 and-BUX41 N are and power-switching circuits. such as Pr - - 120W 120 W
epitaxial-base silicon n-p-n transistors converters. inverters. switching
having hi,9h-voltage and high-current regulators. and switching-control
capabilities and featuring fast-switching amplifiers. The RCA-BUX41 and-BUX41N TERMINAL DESIGNATIONS
speed at low saturation voltage. They are are supplied in a steel JEDEC TO-204MA
especially sui~able for control amplifiers hermetic package. c

'~
BUX41 BUX41N
VCBO· ............................................ . 250 220 v JEDEC TO-204MA
VCER (See dlmenllonal oulline "A".)
RBE = 1001"1 ..................................... . 240 200 v
VCEO·············································· 200 160 V
VCEX
VBE = -1.5V ................................... . 250 220 V
VEBO······················ .. ······················· 7 7 V
IC················································· 15 18 A
ICM··············································· 20 25 A
lB·················································
PT
3 3.6 A
TC .. 25'C ....................................... . 120 120 W

TC > 25'C derate linearly ........................... . 0.69 0.69 WI'C
Tstg.TJ ........................................... . -65 to +200 -65 to +200 'C
TL
At distances;' 1/32 In. (0.8 mm) from seating
plane for 10 s max................................ . 235 235 'C
CASE TEMPERATURE (Tcl-.-C
Fig. 1-Deratlng curves for ISIB and dissipation;
Fig. 2- Maximum safe-operatlng areas for BUX41 (Tc = 25 'C). Fig. 3-Maximum safe-operating areas for BUX41N (Tc = 25'C).
434 ____________________________________________________-----------------
BUX41, BUX41N
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) 25°C unless
otherwise specified

TERISTIC Vdc Adc BUX41 BUX41N UNITS
160 0 - 1 - -
ICEO 130 0 - - - 1
ICEX 250 -1.5 - 1 - -
220 -1.5 - - - 1
rnA
ICEX 250 -1.5 - 5 - -
TC=125°C 220 -1.5 - - - 5
lEBO -5 - 1 - 1
VCEO(SUS)a 0.2b 200 - 160 - V
V(BR)EBO
IE= 50 rnA
0 7 - 7 -
hFE
4
4
5b
ab
15
8
45
-
-
15
-
45
4 12b - - 8 -
VBE(sat)
ab 1 - 2 - -2
12b 1.5 - - -
5b 0.5 - 1.2 - -
8b 1 - 1.6 - -
VCE(sat) 8b
12b
0.8
1.5
-
-
-
-
-- 1.2
1.6
V
ISlb
tp = 1s
135
100
0.15
-
-
-
-
0.27
-- A
nonrep. 30 4 - 4 -
fT 15 1 - 8 - 8 - MHz
150c 8 1 - 1 - -
tON 30C 12 1.5 - - - 1.3
ts 150C 8 1 - 1.7 - -
IB1 = IB2 30C 12 1.5 - - - 1.5 ,..s
tf 150C 8 1 - 0.8 - -
IB1 = IB2 30c 12 1.5 - - - 0.8
ReJC - 1.46 - 1.46 °C/W
a CAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer.
b Pulsed; pulse duration = 300 ~s, duty factor", 2 %.
CVCC·
,
'00 COLLECTOR - TO -EMITTER VOl-TAGE (VeE):4
'r-rtt--+--~~~--t--+-+~ t
0
, I
0<.
i <,
'r-rt+--+--~~~--+--+-+~ ffi .-~
~
g ~~~'Cj~ I
2
_ 2S G C
10 00 I
r 0
i'
i
010
-40"c ~
, I--
! , ~

COLLECTOR-TO-EMITTER VOLTAGE (VeE) - v
~
. , .,, 10
, .,, 100
Fig. 4- Thermal·cycling rating chart for both Fig. 5- Typical output characteristics for both Fig. 6- Typical dc beta characteristics for
types. types. both types.
__________________________________________________________________ 435
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ~ _ _ _ __
BUX41, BUX41N
CASE TEMPERATURE (Te)' 25'C
COLLECTOR ·ro -EMITTER VOLTAGE (Vee) : 15 V 4 I . ' ICI'
FREQUENCY ~5 MH-z
r
~ z
0
I
~
'0 ~>
~.b
,
g" ~] I
~ 20 ~l
~
~~ I ~
b;r -J::::.1::::,.
~ " ';"0 -40' C ,00"
~>
~:'iU~€.I'{C'1
B
10
2 ~
0
"i'€.-""'I't~p.
~
"'<I
0.4 0.6 1.2
COLLECTOR CURRENT (lcl- A , ~2CS-32266
o
5
COLLECTOR CURRENT (lei - A 92C5-30386
o' 2 4 , , 10
COLLECTOR CUARENT(IC) -A
, ., 100
92CS.~0316
Fig. 7- Typical gain-bandwidth product Fig. 8- Typical collector-to-emitter saturation Fig. 9- Typical base·to-emitter saturation
characteristic for both types. voltage characteristics for both types. voltage characteristics for both types.
4 ,
I I 4 " 4 "
COLLECTOR CURRENT (r cl-A 92C5-32262 10 102 10'
COLLECTOR-TO-BASE VOLTAGE (Vee)-V OR
EMITTER-IO-BASE VOLTAGE (VEBI-V 92C5-30388
Fig. IO-Typical saturated·switching times as Fig. II-Typical common·base Input (Clbo) or
function of collector current for both output (Cabo) capacitance charac-
types. teristics for both types.
436 __________________________________________________
POWER TRANSISTORS
BUX42
High-Current, High-Power, High-Speed Features:

VCEO - - 250 V
Siricon N-P-N Power Transistor IC --12A
Pr --120 W
The RCA-BUX42 is an epitaxial-base NOTE:CJRRENT DERATING AT CONSTANT VOLTAGE

APPLiES ONLY TO THE DlSSIPATION-L.IMnED PORTION
silicon n-p-n transistor having hlgh- AND IS/b-LlMLTEO PORTION OF MAXIMUM-OPERATING TERMINAL DESIGNATIONS
I1REA-CURVES. DO NOT DERATE THE SPECIFIED VALUE
voltage and hlgh-current capabilities and FOR Ie MAX.
featuring fast switching speed at low
saturation voltage. It is espacially
switching circuits, such as converters, In-
verters, switching regulators, and
switching-contrtol amplifiers.
The RCA-BUX42 is supplied in a steel
JEDCEC TO-204MA hermetic package.
JEDEC TO-204MA
25 50 75 100 125 150 17!!\ 200
CASE TEt.lFERATURE (TCI-ec
Fig. I-Derating curves for Islb and

disSipation.

BUX42
VCBO·· ........................................................ . 300 V 1j (MAX1~200·C
VCER
RBE = 10011 .................................................. . 290 V
VCEO····················· ..................................... . 250 V
,"
VCEX
VBE = -1.5V .....................•............................
VEBO·············· ............................................ .
300
7
V
V
~
fz ·· r~·~
\ "- ~.~
·
Ic ............................................................. . 12 A 0 ~.>
CM ............................................................ . 15 A i ""~
~~~h'
lB················· ............................................ . 2.4 A ~
Q
Pr ,
\~~~ \ :K rt
~
w
TC ,,25'C ..................................................... . 120 W -
Tc >25'C ..................................................... . 0.69 W/'C ~
TSlg , TJ ..•...................................................... -6510 +200
TL
AI dislances '" 1/32 In. (O.B mm) from seating plane
for 10smax.......................•............................ 235
'c
'c
10
6104
.. , ..,"-. 8,0!!
, 4
NUMBER OF THERMAL. CYCLES
,
iZCS-304t16
Fig. 2 - Thermal·cycling chart.
'00 COLLECTOR-TO -EMITTER

0 VOLTAGE (lJCE)-411
~
r·
~
~~4
'I---
-- '~C
~= ~
, ~
~ CASE ITEMPERAiURErc, -I ~
~
~IO
~ !\
g "-
, i ill
0.1 10
COLLECTOR CURRENT (Ic)-A 92CS-32211
Fig. 4- Typical dc beta characteristics.
Fig. 3- Maximum safe·operatlng areas (Te = 25'C).
437
BUX42
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) 25"C 4 COLLECTOR -TO-EMITTER

VOLTAGE (YCE)a4 v
I

VOLTAGE CURRENT
CHARACTERISTIC BUX42 UNITS
Vdc Adc
VCE VBE IC IB Min. Typ. M8X.
ICEO 200 0 - - 1
ICEX 300 -1.5 - - 1
TC = 125'C 300 -1.5 - - 5
mA COLLECTOR CURRENT (lei-A UCS-32210 "
Fig. 5- Typical base·to·emitter voltage as a
function of col/ector current.
lEBO -5 0 - - 1
VCEO(sus)b 0.28 0 250 - - V
V(BR)EBO
IE = 50mA
0 7 - -
hFE
4 48 15 - 45
4 611 8 - -
VBE(sat) 6a 0.75 - 1 2
VCE(sat)
48 0.4 - 0.3 1.2 V
68 0.75 - 0.5 1.6
fT 15 1 8 - - MHz
COLLECTOR-TO-EMITTER VOLTAGE {VCEI-V
ISlb 135 0.15 - - A
t = 1 s. nonrepetitive 30 4 - - Fig. 6-Typlcal output characteristics.
tON 6 0.75 0.45 1

ts IB1 = IB2 VCC= 6 0.75 - 1.35 2 p's
tf IB1 = IB2 150 V 6 0.75 - 0.7 1.2

RoJC - - 1.46 'C/W
a Pulsed; pulse duration = 300 pS. duty factor :5 2%.
b CAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve trl;lcer.
10
Fig. 7- Typical base·to-emltter saturation
current.
CASE TEMPERATURE (TC)-2'·C

3 '11. 1": FREQUENCY U) -I MHz
I
~!
z
0
~
. I Is-Ie"
TC·- 4O• C
TC -/2S·C
CASE TEMPERATUREITc ,_2S-C
COLLECTOR- TO-EMITTER VOLTAGEIVc £'· H50V
-§
~B
"tJ
4
~~;~
~ Tc -25·C 1.8 a,Ie'8
~~IO',
~14
~!
A ~ I~
~~
: r----...
~~ 2 .....
~.
2
-8102
r
7~
8 •
o
:
~
~t.""
.~~''''I
t.,,,\(y'"
<"'~ ",,,'.
'.
1£ :
u:
Q 10
.. ,
c,..
LL
LL
:::
COLLECTOR CURRENT (ICI-4

.. 10
2
2
10
2 • 6'
EMITTER-TO-BASE VOLTAGE (VEB)-V

102
COLLECTOR-TO-BASE VOLTAGE (VcB)-V OR
2 • 6 ,
103
COLLECTOR CURRENTIIc)-A 92CS-!l2271:1 FIg. 10-Typical common·base Input or output

Fig. 8- Typical collector·to-emltter saturation capacitance characteristics as a
voltage as a function of collector Fig. 9-Typlcal saturated switching times as a function of collector·to·base voltage
current. function of col/ector current. or amltter·lo-base voltage.
438 ____________________________~------------------------------------------
BUX43
Features:
High-Voltage Power Transistor
• High Voltage Rating:
VCEX = 400 V
For Off-Line Power Supplies and Other • Low VCE(sat) at IC = 5 A
High-Voltage Switching Applications • Steel Hermetic TO·204MA Package
Applications:
The RCA·BUX43 silicon n·p·n power tran· plies and is also well suited for use in a
sistor features high·voltage capability, wide range of inverter or converter cir· • Off·Line Power Supplies
fast switching speeds, and low saturation cuits and pulse·width·modulated • Hlgh·Voltl!ge Inverters
voltages, together with hi.gh safe· regulators. • Switching Regulators
operating·area (SOA) ratings. It is special· The RCA·BUX43 is supplied in a steel
Iy designed for use in off-line power sup- JEDEC TO-204MA hermetic package. TERMINAL DESIGNATIONS

VCBO··· .. ····· .... ·· .... · .. ··•·········· .... ···· .. · .......... .. 400 v
VCEX
VBE = -1.5V ................................................. . 400 v
VCER
RBE = 100Q .......................................•......•.... 360 v
VCEO· ..................•........................•..•..........•. 325 v JEDEC TO·204MA
VEBO .........................•..........•....••.....•..•....... 7 V (See dlmenllonal outline "A".)
Ic ............................................................. . 10 A
ICM··················································· ......... . 12 A
IB ..........................................................•..• 2 A
Pr
TC upto 25'C .............. " .................•........•........ 120 w
T C above 25'C, derate linearly .................................... . 0.69 W/'C
Tstg, TJ .........•..•..•........................•........•..•.... -65 to 200 'C
TL
At distance;. 1/16 in. (1.58 mm) from seating plane
for10smax .................................................. . 235 'C
I
CASE TEMPERATURE ITcl-oC
Fig. 2"':' Dissipation and ISlb derating curves.
"100
92CM-32268
Fig. 1- Maximum operating areas. Flii3~ Thermal·cycling chart.
___________________________________________________________________ 439
POWER TRANSISTORS
BUX43
ELECTRICAL CHARACTERISnCS, at Case Temperature (TC) 25°C unless 200 COlLECTOR-TO-EMITTER
o VOLTAGE (VCE)'3V
otherwise specified
~
TEST CONDITIONS ~ 100 f--==~=d=-f-+
CHARACTERISTIC VOLTAGE CURRENT LIMITS UNITS
g 6
~~4
Vdc Adc
VCE VeE IC Ie Min. Typ. Max. 1 5
~
ICEO 260 - - 1
e~ 10 I-----l-
'CEX 400 -1.5 - - 1
rnA
g f,
TC = 125'C 400 - - 5
C')~~ECTOR CURRENT (IC)-A
10
lEBO -5 0 - - 1
VCEO(SUS)a L=25 mH 0.2b 0 325 - - V
Fig. 4- Typical de beta characteristi~s.
V(BR)EBO
'E = 50mA
0 7 - -
hFE
4 3b 15 - 60
4 sb 8 - -
VBE(sat) 5b 1 - 1.2 2
V
VCE(sal)
3b 0.375 - 0.3 1
5b 1 - 0.5 1.6
z
o
-+----+---f~~ :~2~~~c
ISlb I = 15
135 0.15 - - A ~ Te • 25·C
30 4 - - ">
~~ <\
fT 15 1 8 - - MHz ~!
~~ ~----
ION Id + Ir VCC= 5 1 - 0.45 1
~~
Is 150 V 5 1c - 1.5 2.2
p's
~ gO.lh,..2.::""L-6.-0
-
~ '~~~--~----+--~--4-~
If 5 1c 0.6 1.2
ROJC - - 1.46 'C/W
a CAUTION: sustaining VCEO(sUS) MUST NOT be measured on a curve tracer. COLLECTOR CURRENT (Ic1-A
b Pulsed; pulse duration = 300 ~s, duty faclor '" 2%.
Fig. 5- Typical collector·to-emitter saturation
c 181 = -182' voltage as a function of col/ector
current.
4
VOLTAGE (VeE)' 3 V
I !
I
I
!
~ ,r-------t--------+----+---t-~ , i
I
!
>
I i
~, _40° C -
~I _40·C
~8 25°' ~ f=.-
6 I ~~ERATURE ITel ,-+---+---' 8 2!>oC +--
> er----- c~St.
6 ~
~toIPERrR<"C
J
COL. LECTOR CURRENT (Ic)-A
• I
,
. 10 COLLECTOR-TO-EMITTER VOLTAGE {VcEl-v
Fig. 6- Typical base-to-emitter saturation Fig. 7- Typical base·to·emitter voltage as a

voltage as a function of collector function of collector current., Fig. 8- Typical output characterIstics.
current.
440 _____________________________________________________________________
POWER TRANSISTORS
BUX43
104 CASE TEMPERATURE (Tc1·2!j·C .. 0r-
II: II..
~; 6 FREQUENCY (I}-i MHI H- ._- ~
io ' -i-t- --f--r-tl-------
-0
],1 ,r--~"Sb'~. .-+++I---;--":'~

~~IOl I ~ 11\ I
z t! 8 +-
II• i---+---t--4~~---+---+--~--4
~~ :~f-~J- c-=-- - :~F;''-l'-~--l'--+-----+i
~
~i1
~§~
'f--~-- I
-!
I
I I
~~
~~
:-
~- 4 --
~f~
-1- -t:=rr Hf
o 2 4 6
:iii:iii
88
2
10
4
___
6 B IO 4
I
6 8102 2 4
-r
-J-+J---l--l---l--,.,j
6 8103
I
COl.LECTOR CURRENT II C I-A

COLLECTOR-lO-BASE VOL1AGE (Vcel-V OR
EMITTER-lO-BASE VOLTAGE !VEsl-V
Fig. 10-Typical common-base Input or output
Fig. 9-Typlcal saturated switching time capacitance characteristIcs as a
characteristIcs. function of coffector-to-base voltage
or emltter-to-base voltage.
_____________________________________________________________________ 441
POWER TRANSISTORS
BUX44
Feafures:
High-Current, High-Power, High-Speed
VCEO - - 400 V
Silicon N-P-N Power Transistor· IC --SA
Pr - - 120W
The RCA-BUX44 is an epitaxial-base switching circuits, such as converters.ln-

silicon n-p-n transistor having high- verters, switching regulators, and TERMINAL DESIGNATIONS
voltage and high-current capabilities and switchlng-control amplifiers.
featuring fast-switching speed at low
saturation voltage. It Is especially The RCA-BUX44 is supplied in a steel
suitable for control amplifiers and power- JEDEC TO-204MA hermetic package.

BUX44
JEDEC TO-204MA
VCBO·················································· .... 450 v
(Se. dimenllon.1 outline "A".)
VCER
RBE = 1()()Q .............................................. . 440 V·
VCEO·················································· ... . 400 V
VCEX
VBE = -1.5V ............................................ . 450 V
VESO ·················································· ... . 7 V
IC···················································· .... . 8 A
ICM ....................................................... . 10 A
lB···············································;···· .... . 1.6 A
Pr
TC< 25"C ............................................... .. 120 W
TC > 25"C derate linearly ................................... . 0.69 WI'C
Tstg,TJ ................................................... . -65to +200 'C
TL
At distances .. 1132 in. (0.8 mm) from seating
plane for 10 s max ........................................... . 235 'C
CASE TEMPERATURE 1Tcl-·C
Fig. 2- Derating curves for IS/b and dissipation •
.
I
lj (MAX.)_200·C
,
.
.., '
f . ~~.~;~
Ii 1\ '\ f'....,.:....,'" .
;:
<f
ii
" ,
4
~ ~
\ '\ f~
~"80'.,
I~~~\. ~ 11.. ,.
~
~ r--
10
, 4 2 4
~2
8'04 . 8'05
4 6 8100 NUMBER OF THERMAL CYCLES
.2CS-:S04,.
COLLECTOR-TO-EMITTER VOLTAGE (VCEJ- V '2CM-32201
FIg. 1- MaxImum safe-operatlng areas (Tc = 25 "C). Fig. 3- Thermal-cycllng chart.
442 ________________________________________________________________________
BUX44
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) 25°C 0
200 COLLECTOR TO-EMITTER
VOLTAGE (VCE1~4V
r··
Unless Otherwise Specified !i
BUX44 ~c
Vdc Adc ~~4
!5 , ~
VCE
320
VBE IC IB
0
Min.
-
Typ.
-
Max.
1 ~
~
". .
ICEO CASE ITEMPERAiURErCI"I-:;;;:c.-
450 -1.5 - - 1
~
~ 10
~
ICEX
TC= 125°C 450 -1.5 - - 5
mA g
·,
0.1
, . .. ,
10
lEBO -;5 0 - - 1 COLLECTOR CURRENT (ICI-A
VCEO(sus)b 0.2a 0 400 - - V Fig. 4- Typical dc beta characteristics.

V(BR)EBO 0 7 - -
IE=50mA
4 2a 15 - 45
hFE 4 4a 8 - -
VBE(sat) 4a 0.8 - 1 2
2a 0.25 - 0.15 1 V 4
VCE(sat)
4a 0.8 - 0.25 2
VOLTAGE (VCE)-4V
J
fT 15 1 8 - - MHz
, I
ISlb 135 0.15 - - A >
t = 1 s, non repetitive 30 4 - - I
~I
-
-
_40· C
tON 4 0.8 0.4 1
VCC= I's
~
ts 161 = 162 150V 4 0.8 - 1.7 2.5
8
6~ 1UI'lE.rrC
):\Z~·c
tf 161 = 162 4 0.8 - 0.65 1.2 • c.s< """""I

ROJC - - 1.46 °CIW j
, . 10
a Pulsed; pulse duration = 300 JJS, duty factor < 2%. b CAUTION: The sustaining voltage V CEO (sus) 92C$-32210
MUST NOT be measured on a curve tracer. Fig. 5- Typical base·to·emltter voltage as a

function of collector current.
I
10 10
COLLECTOR-lO-EMITTER VOlTAGE (VCE)-I/
COLLECTOR CURRENT {IC1-A COLLECTOR CURRENT 11c)-A
Fig. 7- Typical collector·to·emitter saturation Fig. 8-Typical base·to·emitter saturation

Fig. 6- Typical output characteristics. voltage as a function of collector cur· voltage as a function of collector cur·
reni. rent.
_________________________________________________ 443
POWER TRANSISTORS
BUX44
2 4 6 810 2 4 02
6 81 2
COLLECTOR CURRENT (.ICI-A COLLECTOR-TO-BASE VOLTAGE (Vc81-V OR
92C$-$2201S
EMITTER-TO-BASE WLTAGE (V£el-V
Fig. 9-Typlcal saturated switching time

. characteristics. Fig. 10- Typical common-base Input or output
capacitance characteristics as a
function of collector-Io-base vollage
or emltter-to-base voltage.
444 _____________________________________________________________________
BUX45
Features:
High-Voltage, High-Power, VeEO - - 500 V
Silicon N-P-N Ie - - SA
Power-Switching Transistor I'T - - 120 W
The RCA·BUX45 is an epitaxial·base suited for use in a wide range of inverter

silicon n·p·n transistor having high· or converter circuits and pulse·width·
voltage capability, fast switching speeds, modulated regulators.
and low saturation voltages, together The RCA·BUX45 is suppUed in a steel
with high safe·operating·area (SO A) JEDEC TO·204MA hermetic package.
ratings. It is specially designed for use in
,off·Une power supplies and is also well
MAXIMUM RATINGS, Absolute·Maximum Values: 92CS-34134

BUX45
JEDEC TO·204MA
VCBO······ .................................................... . 500 V
VCER (See dimensional outline "CC".)
RBE = 1000 .................................................. . 500 V
VCEO······ .................................................... . 500 V
VCEX
VBE =-1.5V ................................................ .. 500 V
VEBO .......................................................... . 7 V
IC ............................................................. . 5 A
ICM ............................................................ . 7 A
lB······ ....................................................... . A
PT
TC" 25'C .................................................... .. 120 W
TC> 25'Cderate linearly ........................................ . 0.69 W/'C
Tstg,TJ ........................................................ . -6510 +200 'c
TL
At distances" 1/32 in. (O.B mm) from seating plane
for 10smax................................................. :. 235 'c
I
FIg. 2-Derating curves for 'SIb and

dissipation.
1j (MAX.)-200·C
~
~'
I ., ~~.~,~
z
0
1\ '\ r'. .-tq''''~
~
~
4
\ '\ .L:~
",
~hf
-~ ~~ R~ ~.~11
E
W
~
~
r--
I~~
92CM-32!S3!S
10
8 104 2 .. 110'
2
. ~2
• .11 •
Fig. 1-Maximum safe·operating areas ITe = 25·C). Fig. 3- Thermal·cycllng chart.
__________________________________________________________________ 445
BUX45
ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) 25°C

IUX45 UNITS
Vdc Adc
VCE VIE IC II Min. Typ. Max.
ICEO 400 0 - - 1
ICEX 500 -1.5 - - 1
mA
TC - 125°C 500 -1.5 - - 5
lEBO -5 0 - - 1
o ••
VCEO(sus)b 0.28 0 500 - - V
0.' I
COLLECTOR
/0
CURRENT lIe I-A 92eS-';!•••
100
V(BR)EBO IE = 50mA 0 7 - - Fig. 4- Typical dc beta characteristics.

hFE
4 18 15 - 45
4 28 8 - -
VBE(sat) 28 0.4 - 0.8 2
V
VCE(sat)
18 0.125 - 0.15 1
28 0.4 - 0.15 2
tr 15 1 8 - - MHz
ISib 135 0.15 - - A
t = 1s, nonrepetitive 30 4 - -
tON VCC 2 0.4 - 0.4 1
ts IB1 IB2 = = 2 0.4 - 3.5 5 IlS
tf IB1 - IB2 100 V 2 0.4 - 0.6 1.2
R8JC - - 1.46 0c/w
COLLECTOR-TO-EMITTER VOt.TAGEIVcE'-V '2CS-3204IRI
a Pulsed; pulse duration = 300 ~s. duty factor .. 2%. Fig. 5- Typical output characteristics.
b CAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer.
-Le/5
·M~
COLLECTOR- TO-EMITTER w :I a
VOL TA,GE IVeEi' 4V
"~
, I g,
~ _40· C z
0 ' 'j
'r- ~.'2.'OC
~ a P---CAsE TE",PERATU
ii=:- •• /M~
g ~: //#~
~
~,;
l0~~~~
0 4
~
2 ~!
, *~ •V'
!* ~
~ ~,
OJ
01
, 0
COLLECTOR CURRENT {'IC)-A
.. '0
0
u 0.1
D.,
~
COLLECTOR CURAENTI'Ic)-A
o
'2CI-)2045
'0
0'
I 2 4"
COLLECTOR CURRENT (I c)-A IICS-32048
10
Fig. 6- Typical base-to-emltter voltage as a Fig 7-Typical collector-to-emitter saturation Fig. 8- Typical base-to-emltter saturation volt-
function of collector current. voltage as a function of collector age as a function of collector current.
current.
~~ CASE TEMPERATURE (Tcl- 2S-
FREQUENCY,,)-IMtta
~i •
~~ 4
'0.,f- r--I-- 0,..
~2
,.f--
0
,
1j~lo'
zc •
~~
~§
. r-.
·• .
4
~I r-....
~
0...
4
vV' 101
.."~ ••
·
0., 0
-
0
-
IfB,.
2 •
, 1,03
.- 10 4 • "0 I 4 . llOt 2
.. .
f-- COLLECTQR-lO-MS[. vot.TAGE (Vcs1-Y
a:I. [M1TTER-TO-BASE \fOLTAGE(V£8I-:-V taCS-3IOM
0.00,2 eo.OII! 4 8 'b. I 2 61, 2' o • "0
PULSE WIDTH (Tpl-S '2C'-U043
Fig. 11-Typical common-base Input or output
(lei-A capaCitance character/stlcs as a
Fig. 9-Typical saturated-switching times as Fig. 10-Typlcal thermal-response function of collector·to-base voltage
a function of collector current. characteristic. or emltter-to-base voltage.
446 _____________________________________________________________________
--------------------______________________________________ POWERTRANSISTORS
BUX47
High-Voltage, High-Power, Features:

VCER -- 850 V
Silicon N-P-N VCEO -- 400 V
Power-Switching Transistors 'C(sat) - 6 A
ICM -- 12 A
The RCA-BUX47 is an epitaxial-base supplies and is also well suited for use in a tf -- 0.8 /1s max.
silicc'l n-p-n transistor having high-voltage wide range of inverter or converter circuits
capab.lity, fast switching speeds, and low and pulse-width-modulated regulators.
saturation voltages, together with high The RCA-BUX47 is supplied in a steel
safe-ope rating-area (SO A) ratings. It is JEDEC TO-204MA hermetic package.
specially designed for use in off-line power TERMINAL DESIGNATIONS
C
E· (FLANGE)

VCER
RBE = 10 0 .................................................. . 850 V
VCEO ................... .. ............................... . 400 V
VCEX
VBE = -2.5 V ... . ........................... . 650 V 92CS-34134
~ .............................•........................... 8.5 A
ICM ................................................. . 12 A JEDEC TO-204MA
IB ............................................................ . 3 A
PT (See dimensional outline "CC".)
T c:S 25°C ................................................... .. 107 W
TC > 25'C ................................................... . 0.7 WloC
T stg ' T J ....................................................... . -65 to 175 °c
TL
At distances", 1132 in. (0.8 mm) from seating plane for 10 s max. 235 °c
NOTE"CURRENT DERATING AT CONSTANT VOLTAGE

APPLIES ONLY TO THE OISSIPATION-Ll"mED PORTION
AND IS/b-LlMITED PORTION OF MAXIMUM-OPERATING
AREA-CURVES. 00 NOT DERATE THE SPECIFIED VALUE
i FOR Ie MAX
~
~
~ 100
50
13
li
25 50 75 100
CASE TEMPERATURE (Tcl-·C
Fig.2 - Derating curves for lSI band

dissipation.
1mH
tp· ~O~S
BUX47
Vce 1
+
f =1 KHz
92CS-33452
COLLECTOR - TO- EMITTER VOLTAGE (VCE )-V' 92CM-33453

Fig.3"': Switching times test circuit - inductive
Fig.1 - Maximum safe-operating areas (T C = 25°C). load.
___________________________________________________________________________ ~47
POWER TRANSISTORS
BUX47
ELECTRICAL CHARACTERISTICS, Case Temperature (Tel = 25°C ",'''c''
Unless Otherwise Specified ~
~
g L.1-t-
CHARACTERISTIC
TEST CONDITIONS
VOLTAGE CURRENT
LIMITS
UNITS
z
°~
I
. ~
lLLI6' oj -
~:~r--
V de A de
aUX47
.-ab' .L~o
ICER RBE = 10 0
TC = 125°C
VCE
850
850
VaE IC la
0
0
Min.
-
-
_.
Typ.
-
-
Max.
0.4
3
~~4
~
e
~¥{ .
~~ V'I
It
ICEX 850 -2.5 - 0.15 mA ~

cl
TC = 125°C 850 -2.5 - - 1.5 u 0.1
0.1 2 4 , I 10
lEBO -5 0 - - 1 COLLECTOR CURRENT (Ie I-A
Fig.8 - Typical collector-to-emitter saturation

UCS- 32045
VCEO(sus)b
L = 25 mH
V(BR)EBO
0.2a 0 400 - - voltage as a function of collector· current.
~g
V
IF = 500 mAa - -
.
0 30
VBE(Sal)8 6 1.2 - - 1.6
~
I -----:40-(;
VCE(sal)8
6 1.2 0.6 1.5
~, 2~~!;";..'''-':...'_I''t-·_C+-+-+++-1
9 3 - 3 !~ ~SE1E""'''' I
~~4r-------+----+---+--t-t-t-t~
ISlb
I = 1s, nonrepetilive
100 0.5 - - A
as
tON VCC 6 1.2 - 0.5 1
tslBl = IB2 = 6 1.2 - 1.5 3 p.s
!*
If IBl = IB2 150 V 6 1.2 0.5 0.8 QI
2 .. 8' 10
vCC COLLECTOR CURRENTtIcl·-A t2CS-52048
If Induclive Load = 6 1.2 - 0.2 - Fig.9 - Typical base-to-emitter saturation

300 V voltage· as a function of col/ector
ROJC - - 1.4 °CIW current.
= 300 ,,", factor';:: 2%,

I· ~f::::
~" CASE TEMPERATURE I TC I- 28-
a Pulsed; pulse duration
1'1'." • FREQUENCY I'I-IMHI
~. C;bo
.
~I
.c£·.v ~
'U , RESISTIVE LOAD ~~Io'
p f\ TC" 25~C
.I.Br-J:B2·~/'
~~
5~
I
~
8
.0
\ . 4
....... VCE·I~Y
§s
I"-t--. ~!; r---
40
~§102 1-- c...,
I. ··
2
1"0 1---./\
!
I 'r--... i!
!- 30 f"'!"°'v
V 1\
~I
!
. 8
'I
I--
~~
~
.. ..
li2
20
4
V- I'- l- I-
V .J:!o f--" ........
~~I:
...
"
10 • I 10 • I 102 2 IDS
10 2
COlLECTOO-TO-EWlE VCl.TAOE 1Vcal-V '2el-32M"
... ...
OR EMITTER-TO-BASE VOLTAGEIVEB)-V
0.1
Fig. 10 - Typical commonm-base input or out-
0.1
2
I
2 • • I
COLLECTOR CURRENT (lC.-A
10 • 100
!l2CS-S3454
0 I 2 3
• • •
COLI.:ECTOR CURRENT I1e1-A
7
• • 10 11
92CS-334l!1!1
12 put capacitance characteristics
as a function of collector-to-base
Fig.4 - Static forward current transfer Fig.5 - Switching times vs. col/ector voltage or emitter-to-base voltage.
ratio vs. col/ector current. current.
4r-------~----+_--+__+_4_4_+-t~
::ffi
~
g
!
01
2 .. 6 10 0.001 2 4 8 eo.OI 2 4 6 'h.1 2 .. 8 'I 2 .. 6 '10
COLLECTOR-TO-EMITTER VOLTA(lECVCE1- v COLLECTOR CURRENT (I.e I-A elCS-320., PULSE WIDTH (Tp)-S ncs-:n04S
Fig. 7 - Typical base-to-emittef voltage as Fig.ll- Typical thermal-response
Fig.B - Typical output characteristics. a function of col/ector current. characteristic.
448 _____________________________________________________________________
BUX66, BUX66A, BUX66B, BUX66C, BUX67, BUX67A, BUX67B, BUX67C

High-Voltage Silicon N-P-N and P-N-P Transistors
Features:
The RCA-BUX66-series types are silicon p-n-p switches, switching regulators, converters, • Large safe-operating area
transistors; the RCA-BUX67-series types are and inverters. • Thermal-cycling rating
silicon n-p-n transistors_ All of these devices The BUX66,BUX66A,BUX66B,and BUX66C • lOO-percent tested to assure freedom from
feature high breakdown voltage and fast are p-n-p complements to the n-p-n types second breakdown in both forward- and
switching speeds_ They are intended for a BUX67, BUX67A, BUX67B, and BUX67C_ reverse-bias conditions when operated
wide variety of applications in acldc com- All are supplied in the JEDEC TO-66 within specified limits
mercial equipment_ hermetic package_ • Economy types for acldc circuits
Typical applications include high-voltage
operational and linear amplifiers, high-voltage • Fast turn-on time at high collector current
BUX66+ BUX66A+ BUX66B+ BUX66C+ c
'~
BUX67 BUX67A BUX67B BUX67C
VCBO 200 300 350 400 V
VCEVlsus)
VBE = -1_5 V 200 300 350 400 V
VCERlsus)
RBE = lOOn 175 275 325 375 V JEDEC TO-66
VCEOlsus) 150 250 300 350 V (S.e dimensional outline "N".)
VEBO 6 6 6 6 V
IC _ 2 2 2 2 A
ICM 5 5 5 5 A
IB _ A
PT
Up to 25°C 35 35 35 35 W
Above 25 0 C, Derate linearly_ 0_2 0_2 0_2 0.2 W/oC
TJ, Tstg . -65 to 200 °C
TL At distance 1/16 in. 11.58 mm) from
seating plane for 10 s max. 235 235 235 235 °C
Fig. 1 - Thermal-cycling rating chart for
BUX66-series types.
: ' 'rTOTTriTTERiOCTAiEtVCEI'-'V - COLLECTOR-TO-EMITTER 'o'OlTAGE {VCEI. 10 V COLLECTOR-TO-EMITTER VOLTAGE (VCE'o-IOV

CASE TEMPERATURE {TC}22:\·C
;; 1 '00
1
~
Q
CASE TEMPERATURE (~ ~·1!50*C
S 12~.e
• 100
-~.
I:
E ·,
TC"Z!5"C
I 1
1
I
i
I
/'
~\
I
JOO
~ ~l1c.'·2!5·C
b -I-
~, ..~ """
I
! \ "';1-J I ~--!-1-
-we
I ,
l0b"-t--t--t-tt--t--t-t-t+--H
\_+-1-H
·· . . [\.
10
., .
~
g
-001 , 0.1
, .
COLLECTOR CURRENT tI.CI-A
r
,
g
, ! II , .~
10
.11)2
L ,
COLLECTOR CURRENT (IC1- .....
..,~
,' ", -0.1
, .. -I
COLLECTOR CURRENT I Ie 1- A
, ..
-10
Fig. 3 - Typical dc beta characteristics for Fig. 4 - Typical gain-bandwidth product for
BUX67-series types_ BUX66-series types.
BUX66-series types.
________________________________________________________________________ 449
POWER TRANSISTORS _______________________________________________________
BUX66, BUX66A, BUX66B, BUX66C, BUX67, BUX67A, BUX67B, BUX67C

ELI:CTRICAL CHARACTERISTICS, At Case Tempel7lture (TC) = 2fjOC
TEST CONDITION~ LIMITS

VOLTAGE CURRENT· BUX66+ BUX66A+ BUX66B+ BUX66C+
CHARACTERISTIC BUX67 BUX67A BUX67B BUX67C UNITS
V de Ade
SYMBOL IC IB Min. Max. Min. Max. Min. Max. Min. Max.
VCE VBE
ICEO 150 0 - 10 - 10 - -5 - -5
200 -1.5 - 8 - - - - - -
ICEX 300 -1.5 - - - 8 - - - -
350 -1.5 - - - - - -8 - -
400 -1.5 - - - - - - - -8 rnA
200 -1.5 - 10 - -
TC = '100 o C
300 -1.5 - - - 10
350 -1.5 - 10 - - - -10 - -
400 -1.5 - - - 10 - - - 10
lESO -6 0 - 1 - 1 - 1 - 1 rnA
hFE ~ la 10 150 10 150 10 150 10 150
VCEO(slIs) 0.2a 0 150 e - 250 e - -300e - -350 1 -
VCER(s",) V
RSE = 50 n 0.2 175e - 215 e - -325e - -375c -
VSEls,lI) la 0.15 - 1.5 - 1.5 - -1.5 - -1.5 V
_.
VCEisail la 0.15 - 2.5 - 2.5 -2.5 - -2.5 V
e obo
VeB = 10 V
f : 1 MHz
BUX67 Types 0 - 120 - 120 - 220 - 220
pF
BUX66 Types 0 - 200 - 200 - 220 - 220
ISlb
t :1 s, nonrep. 40 875 - 875 - -875 - -875 - rnA
ESlb
L: 100!1H
RBE : 20 II -4 50 - 200 - 200 - 50 - J1J
Ihlel
f= 5 MHz
BUX67 Types 10 0.2 2 - 2 - 2 - 2 -
BUX66 Types -10 -0.2 4 - 4 - 4 - 4 -
I,
Vee: 200 V
BUX67 Types 1 O.lb - 3 - 3 - 3 - 3
BUX66 Types -1 -0. lOb - 0.6 - 0.6 - 0.6 - 0.6
ts
Vee= 200 V
BUX67 Types 1 O.lb - 4 - 4 - 4 - 4 !1S
BUX66 Types -1 -0.101 - 2.5 - . 2.5 - 2.5 - 2.5
If
Vee: 200 V
BUX67 Types 1 O.lb - 3 - 3 - 3 - 3
BUX66 Types -1 -0.10b - 0.6 - 0.6 - I 0.6 - 0.6
RHJC 5 - 5 - 5 - 5 °CIW
a Pulsed: Pulse duralion = 300 !1s; duly faclor" 2%. b IS 1 = IS2 • For p·n·p devices, voltage and current values are negative.
e Sustaining vollages, VCEO(susl and VCER(sus) MUST NOT be measured on a curve tracer.
450 __________________________________________________________________
BUX66, BUX66A, BUX66B, BUX66C, BUX671 BUX67A, BUX67B, BUX67C

-10: CASE TEMPERATURE (Tel-IOO·C
.q Ie (MAX.) CONTINUOUS 1 I
~
__ 2 ~-+co-+-
1+--++--l--I--HLl
.... -Ie Itel)'
6 101<$
:1--
. .. . ..
VCEO (MAX.}--350 V (SUX66C)
-10
ICOLLECTOR-TO-EMITTER VOLTAGE (VeEI-V
-100
. .. -KlOO
IlICS-2f5007

BUX66·series at TC= 100°C
COlLECTOR-TO-EMITTER VOLTAGE {VeEI-V

COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V -300
92CS-26006
Fig. 5 - Maximum operating areas for BUX66'series types. BUX67-series at T C= 100°C.
BASE-TO-EMITTER VOLTAGE {V8EI-V
Fig_ 9 - Typical transfer characteristics for

BUX66-series types.
92CS-26078
Fig. 10- Typical output characteristics for

Fig. 6 - Maximum operating areas for BUX67·series types at T C= 25°C.
BUX67-series types _
_____________________________________________________________________ 451
POWER TRANSISTORS
BUX66, BUX66A, BUX66B, BUX66C, BUX67! BUX67A, BUX67B, BUX67C

CO" " .....A.U.' i 'AS' ".P"A~U" NeE) -10 II
~
COLLE:CTOft-TO....TTDt VOlTAIE:
121i-JGl J,-J1t
I P
1 1:'1
ltili I 1
;J
is
Jl
#L .1
.~
'0 } I /
! .L
~ IL /.-
V /
0 V .......
o.
r
o.
""1":'1''" ' fee' I.
0.'
BASE-TO-EMITTER VOlTAGE (V8EI-II
'0
"
COLLECTOR CURRENT I1 C)-A
COLLECTOR CURRENT (Ic}-A
Fig. 11 - Tvpical saturation-voltage characteristic Fig_ 12 - Typical saturation-voltage charac- Fig. 13 - Typical input characteristics for
for BUX67-series tvpes. teristic for BUX66-series types_ BUX67-series types.
CASE TEMPERATURE 1Tc'·25·C CASE TEMPERATURE (TC'·2''''C

CASE TEMPERAT~ ITel- 2.~·C
BASE-tO-EMITTER VOLTAGE (VSE,'-4V BASE-tO-EMITTER VOLTAGE (VBE)' 4V EXTERNAL BASE-lo-EMITTER
EXTERNAL BASE-tO-EMITTER RESISTANCE (RBEI'lO n INDUCTANCE ILI-IOO ~H RESISTANCE tRee.' • 20 tl.
INDUCTANCE III ·'00,.tt
.8 ,
~
100 200 10 30 40 -6 _4 -2
INOUCTANCE (L)-JLH
EXTERNAL BASE-tO-EMITTER RESISTANCE (RSEI-D BASE-tO-EMITTER VOLTAGE (liBEl-V
Fig_ 14 - Reverse-bias second-breakdown Fig. 15 - Reverse-bias second-breakdown Fig. 16 - Reverse-bias second-breakdown

characteristics for BUX67-series characteristics for BUX67-series characteristics for BUX67-series
types_ types_ types_
PULSE DURATION I: 20,..

REPETITION RATE' 200 PULSES/,
COLLECTOfI SUPPL.Y VOLTAGE (VCC)'-200V
:rBI,I 82
CAS£. TEMPERATURE
~ 06H~' i· LL
" LID ! LL L
~ 0.' L IS L j L L I I I
HI\· I'" rill I
or I b- DC ~ETA{h<.)·\Ol.11 U
I II··· , . 1 1 ' .IILLLJ
COLLECTOR CURRENT 11cl-A o
.,.q"._ .... ,,:J...
0.20.4 0.6 O,B 10 12 1.4 1.6 18 2.0
..J
COLLECTOR CURR£NT IIC1-A COLLECTOR CIJRRENT IIe'-A
Fig. 17 - Typical turn-on time and fali-time

characteristics for BUX66-series Fig_ 18 - Typical storage-time characteristic for Fig_ 19 - Typical rise time vs_ collector current
types. BUX66-series types. for BUX67-series types_
a.
0.6
tf~::;:::f24 ~
. "
H_+ .:-:; ~
::-.t::"';'H-t 2.2:;;
'rE~~1~ 2.
~o 100 I~O 200 250 300 350
o 02040.608 10 1.2 14 16 1.8 Z.O o 0.20.4 0.6 0.8 1.0 1.2 1.4 1.6 1-8 2.0
COLLECTOR SUPPLY VOLTAGE {Vee I-V COLLECTOR CURRENT IIcl-A
COLLECTOR CURRENT l!cl-A
Fig. 21 - Typical rise time, fall time, and
Fig. 20 - Typical storage time vs. collector storage time vs. collector supply Fig_ 22 - Typical fall time vs_ collector current
current for BUX67-series types_ voltage for BUX67-series types_ for BUX67-series types.
452 _______________________________________________________________________
High Voltage, High-Power, TERMINAL DESIGNATIONS

Silicon N-P-N
c
Power-Switching Transistors (FLANGEl
The RGA-BUX97 series are epitaxial-base for use in a wide range of inverter or
silicon n-p-n transistors having high- converter circuits and pulse-width-modu-
voltage capability, fast switching speeds, lated regulators.
and low saturation voltages, together with The BUX97-series transistors are supplied
high safe-operating-area (SOA)ratings. in steel JEDEG TO-204MA hermetic pack- 92CS-34134
They are specially designed for use in off- ages.
Jine power supplies and are also well suited
JEDEC TO-204MA
(See dimensional outline "GC".)

BUX97 BUX97A BUX97B
V CES ..... 750 800 800 V
VCEO 350 400 450 V
VEBO V
IC .... A
ICM (tp = 500 {ls) A
IB ........ . A
PT
TC = 75'C 60 W
TJ 175 'c
Tstg ..... - .... -. _ _ _ -65 to 175 'C
o
TL o 80 120 200
CASE TEMPERATURE (Tel-"e
At distance 2: 1/16 in. (1.58 mm) from
seating plane for 10 s max. _ _ _ _ 235 'C Fig.2 - Dissipation derating curves
tor all types.
Fig.3 - Thermal-cycling chart for

all types.
0.1 I " 68 10 " 6 e 100

COlL.ECTOR CURRENT (Ie I-A
10 10 2
COLLECTOR-TO-EM1TTER VOLTAGE {VCE)-V 92CM-33610
Fig.4 - Typical de beta characteristics
Flg.1 -Maximum safe-operating areas for all types. for all types.
453
POWER TRANSISTORS
BUX97, BUX97 A, BUX97B
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) =25"C

Charac- Voltage Current
BUX97 BUX97A BUX97B
terlstlc V dc A dc Unlll
VCE VBE IC tB Min. Max. Min. Max. Min. Max.

750 d 0 - 1 - - - -
ICES 800 d 0 - - - 1 - 1
rnA
ICES 750 d 0 - 3 - - - -
TC=150° C 800 d 0 - - - 3 - 3
lEBO -7 0 - 1 - 1 - 1 rnA 0.1
COLLECTOR CI.ItRENT(~)-A .2el-lIl6U
10
VCEO(suS)b 0.18 0 350 - 400 - 450 - V Fig.S - Typical collector to-emitter saw-
ration voltage as a function of co!-
hFE 5 1.0 8 10 70 10 70 10 70 lector current for aff types.
VBE(sal)
1a 0.2 - 1.3 - 1.3 1.3
V
48 1.25 - 1.8 - 1.8 - 1.8
18 0.2 - 1 - 1 - 1
VCE (sal) V
4a 1.25 - 3 - 3 - 3 2 18 -Xc/3
~
fT 10 0.5 20 (Typ.) 20 (Typ.) 20 (Typ.) MHz
~ I - - : 4 0 'C
o •
ION
4 1.25C 0.6 (Typ.) 0.6 (Typ.) 0.6 (Typ.) ~ 6 25·~~"t_'·_i2-j-··_t--t-t-t--t--H
VCC=100V !;;:=:- ~~SE iE
~'"
Is ~ l41------+--t--t---t---t--t--t--H
4 1.25c 3.5 (Typ.) 3.5 (Typ.) 3.5 (Typ.) ps
VCC=100 V ~~
If
VCC=100 V
4 1.25c 0.5 (Typ.) 0.5 (Typ.) 0.5 (Typ.) ;
ReJC 10 5 - 1.67 - 1.67 - 1.67 °c/w 0.1
2 .. 6 10
COLLECTOR CURRENT (I C)-A 92CS-331112
a Pulsed: pulse duration = 300 ps, duty factor = 1.8%
Fig.6 - Typical base-to-emitter saturation
b CAUTION: The sustaining voltage VCEO(sus) MUST NOT be measured on a curve tracer. voltage as a function of col-
c IS1 =-IS 2 d VCE =V CES max. lector current for alf types.
10,
··,
VCC··IOOV
tlFt-·
Ial--112
t-
~ ~t-
---r-:... ......
"-
, 1
!Ii ,
~ , /
.......
·, ~
.. 6 8 10 2 .. 6 8 10 2
COLLEC'TOR-TO-BASE VOLTAGE (VceJ-V
2 . . . . B 10'
QI
O.~
., , , I
,
COLLECTOR CURRENTlIcl- A
,
92CS-33814
.
Cfl EMITTER-lO-BASE \o()lTAGE(VESI-V 92CS-320~"
Fig.7 - Typical common-base input or output Fig.8 - Typical switching-time charac-
capacitance characteristics as a func- teristics as a function of
tion of collector-to-base voltage or collector current for al/ types.
emil ter~to-base voltage for all types.
454 __________________________________________________________________
BUY69A, BUY69B, BUY69C

Features:
High Voltage Silicon N-P-N • Fast Switching Speed
Power Transistors • HIgh Voltage Ratings: VCEX = 500-1000V
Applications:
For Horizontal-Deflection Circuits and
Other High-Voltage Switching Applications • High-Voltage Inverters
The RCA-BUY69 series of silicon n-p-n white television, CRT's, off-line power
power transistors feature high-voltage supplies and a wide range of inverter or
capability, fast switching speeds, converter circuits and pulse-width-
together with high safe-operating-area modulated regulators.
(SOA) ratings. The RCA-BUY69 series transistors are C
They are intended for horizontal- supplied in steei JEDEC TO-204MA E (FLANGE)
deflection circuit application in black and hermetic packages.

BUY69A BUY69B BUY69C
92CS-34134
VCBO ................................. 1000 800 500 v
VCEO ................................. 400 325 200 V
VCEX JEDEC TO-204MA
VBE = -2 V.................. ~ . . . . . . . 1000 800 500 V
VEBO· .... ········· .. ············ .. · · · · - - - - 8 V
(See dimensional outline "CC".)
IC······· .... ··· .. ········ .. ·· .. ······· _ _ _ __ 10 A
ICM (tp = 500~s) ........................ _ _ _ __ 15 A
IB····································· _ _ _ __ 3 A
Pr
TC = 25'C ............................ _ _ _ __ 100 w
TJ ...................................... _ _ _ __ 200 'C
Tstg···································----- -65to 200 'C
TL
At distance" 1/16 in. (1.58 mm) from
seating plane for 10 s max .............. _ _ _ __ 235 'C
2!> 50 75 100 125 150 17') 200

CASE TEMPERATURE tTCI--C
Fig. 2-Dlssipatlon derating curve for all

types.
1u
H
...
~
~ 6
U TJ (MAX.!-ZOO·C
,
~~,~,
• 1
l 8
!': •
a·' z
i\ '\ ~~-t,>4t
'"
0
~ .
~
\ ~~(
~~ R'~
5
If
~
w f--
~
%~ ~ ~
2:
1\0 ~ c
.. . .. . ..
0
'0 , , , I'-....,
10 10 1 •
'A NUMBER OF' THERMAL CYCLES
COLLECTOR-lO-EMITTER VOLTAGE (VCE)- V .2:ea-50451
92CM-32S88
Fig. l-Maximum operating areas for all types ITc = 25°C). Fig. 3- Thermal-cycllng chart for all types.
__________________________________________________________________ 455
POWER TRANSISTORS
BUY69A, BUY69B, BUY69C
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) 25°C


TERISTIC Vdc Adc BUY69A BUY69B BUY69C UNITS
1000 -2 - 0.1 - - - -
ICEX 800 -2 - - - 0.1 - - rnA
- - - - -
lEBO
500 -2
-5 0 - 1 - 1 -
0.1
1 0., ,
COLLECTOR
10 100 ."
VCEO(Sus)b 0.2a 0 400 - 325 - 200 - V
CURRENT (XC I-A 92CS-32044
hFE 10 2.5a 15 - 15 - 15 Fig. 4- Typical dc beta characteristics lor all

types.
VBE(sat) 88 2.5 - 2.2 - 2.2 - 2.2
VCE(sat) 88 2.5 3.3 3.3 3.3 2 IB.Icn~
u&~'j--
V
V(BR)CBO 0.1 1000 800 500
~ ,
V(BR)EBO
IE=10rnA
8 - 8 - 8 - z
0
~
Z'
" 0
/Il(~';~
8
ISib
- - - ~b
~~v
B
25 4 4 4 A
t = 1s
~~4
IT
f=10MHz
10 0.5 6 (typ.) 6 (typ.) 6 (typ.) MHz
~ ~~.'
VCC= g 2 V v'
:::~ ,
tf 8 2.5c - 1 - 1 - 1 lIS
.
40
5u
R9JC - 1.75 - 1.75 - 1.75 ·CIW 0.1 I , , '0
0.' COLLECTOR CURRENTIIel-A 92CS-3204'
a Pulsed: pulse duration = 300 ~s, duty factor .. 2%. c 181 = -182 Fig. 5-Typical collector·to·emitter saturation
b CAUTION: The sustaining voltage VCEO(sus) and VCEX MUST NOT be measured on a curve tracer. voltage as a lunction 01 collector cur·
rent lor all types.
I.oXe/!l
(Ve'r"
COLLECTOR· TO-EMITTER
~ J
VOLTA ••
I ------=.o-c , ~ ,
~
_40· C
~
i~>'•
~~
:=-c. .'l!l.c~
TE
lIIf'£RA."lURE {"tc
,_I'l'!>oC
~
•
'~E
~\.\'l'!>OC
lE""tR",URE C
~ l4 ~ ·
~~
*~ . ~
g
!
,
Q,
, . . . '0
COLLECTOR CURRENT (I c l - A ,2tS-nO.1
OJ
,
COLLECTOR CURRENT (I.e I-A
. .. ,0 4 6810 2 4 6 BI02
COLLEClOR-TO-BA.SE VOl.lAGE (VCBI-V
2
OR EMITTER-lO-BASE VOLlAGE(VEBI-V
Fig. 6- Typical base·tooflmltter saturation volt· Fig. 7-Typical base·tooflmltter voltage as a
age as a lunction 01 collector current lunctlon 01 col/ector current lor all Fig. 8- Typical common·base input or output
for all types. types. capacitance characteristics as a lunc·
IOIl~t\'SE TEMPERATURE (Te 1-25·C
tion 01 collector·to·base voltage or
~ ~OlLECTOR SUPPLY VOLTAGE, ....cc·40 v - - emltter·to·base voltage lor all types.
: ' ..... ' IC / I.Sa 5 - -
CASE TEMf'ERATURE (Tr.I=250C
,
"'-....
f'... -
, ~ ---
,~ "
··· ..- /
;;.
. ~
"
~
; ~
8 0
COLLECTOR-lO-EMITTER VOLTAGE (V.eEI-V

,. , ",
0' , 2 3 4
COLLECTOR CURRENT (lei-A• • .2CS-S2'BT
92C$-32048
Fig. 10- Typical swltching·time
Fig. 9- Typical output characterIstics lor all characteristics as a lunction
types. 01 collector current.
456 __________________________________________________________________
Power Transistors - Industry Types
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ _ 457
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _....
40310-40314,40316-40319,40321-40325,40327,
40362,40363,40537,40538
Silicon Traosistors for Audio-Frequency Features:
• Hermetically-sealed packages
Linear-Amplifier Applications • Pellet bonded to header -
for greater power·handling capability
These !'ICA transistors are diffused·junction nominal 12·volt vehicular type to 117·volt for greater shock resistance
silicon n·p-n and p-n·p types intended for ac·dc type. • Freedom from second breakdown
specific applications in· audio amplifiers. The use of all·silicon devices permits more • 40$19 II the p-n-p complement 0140317
They provide high·quality economical per· flexibility in the mechanical and electrical
formance in applications from 'Iow·level input design of amplifiers since the output heat
stages to driver and power·output stages of sinks can be held to a minimum.
5 to 50 watts. Supply voltages range from the
N-P·N TYPES IN TO·66 PACKAGE
MAXIMUM RATINGS, AbsoluteMaximum Values: TERMINAL DESIGNATIONS
40310 40312 40313 40316 40318 40322 40324
VcEolsusl ........................ 35 35 V
VCERlsus) ........................ 60 300 40 300 300 V
At RBE ........................ 500 500 500 500 500 on
VEBO ............................ 2.5 2.5 2.5 5 6 6 2.5 V
IC································ 4 4 2 4 2 2 4 A
lB······························ .• 2 2 2 1 1 2 A
PT : JEDECTO·3
TC .;;; 250 C .................... 29 29, 35 29 35 35 29 W
TC > 25 0 C, derate linearly ••....•. 0.17 0.17 0.2 0.17 0.2 0.2 0.17 wiDc n·p·n
TC = 1750 C •..••..••.•...•.....• - 5 5 5 W 40325
Tstg ' TJ •••.•.••••..•.....•..•..•• -65 to 200 DC 40363
T L lOuring soldering):
(See dimensional outline "A")
At distances ~ 1116 in.I1.58 mm)
from case for 10 s max. .......... 235 DC
N·P·N TYPES IN TO·39 PACKAGE

40311 40314 40317 40321 40323 40327
VCEoIsus) ...•..•••••..•.•••.•.••. 30 40 40 18 V
VCERlsus) ...•.••••.••.......•...• 300 300 V
At RBE ...•..••..•...••..•..••. 500 1000 on JEDECTO·39
V eBO •.•••.•...••.•.•..•.••.•••.• 2.5 2.5 2.5 5 2.5 5 V
IC ....•..•..••.•.•..•..••.......•. 0.7 0.7 0.7 1 0.7 1 A
n·p·n p-n·p
lB •.•••..•..••..................•.. 0.2 0.2 0.2 0.5 0.2 0.5 A 40311 40319
PT: 40314 40362
TC .;;; 250 C ...........•.••..•.. 5 5 5 5 5 5 W 40317 40537
TC > 250 C .derate linearly .•.••... - - - - - 0.029 wiDc 40321 40538
TA ';;;250 C .....•...•.......•.. 1 w 40323
DC 40327
~~~D:~in~ ·';'i~~ri~~);· .............. . -65 to 200
At distances ~ 1116 in.ll.58 mm) (See dimensional oulline "e")

from cas. for 10 s max. . . . . . .. . . . 300 300 300 255 300 255 DC
N·P·N TYPES
P·N-P TYPES IN TO·39 PACKAGE INTO-3
PACKAGE
40319 40362 40537 40538 40325 40363
VCBO •••.•.•••...•..••.•.•.••...• 35 V
vceolsuS) •••••..••.••....•.•..•.• -40 35 V
VCERlsus) ..••••.•••.••.• ,........ -70 -55 -55 70 V JEDEC TQ.66
At R Be ..•......•.•••••..•..•.. 200 500 500 200 on
VcEvlsus) n·p-n
AtV Be =-I.5V .•.•••.•..••..•• 35 V 40310 40316
VEBO •••.•••.•..••....•.•.••...•. -2.5 -4 -5 -5 5 4 V 40312 40318
IC •. ' .............................. -<:1.7 -<:1.7 -<:1.7 -<:1.7 15 15 A 40313 ,40322
lB ••••.•••.••.•••...•••••.•.••.••• -<:1.2 -0.2 -<:1.2 -<:1.2 7 7 A 40324
PT :
TC .;;; 250 C .•••.••••.••••••.•.• 5 5 5 5 117 115 W (See dimensional outline "N")
TC > 25o C. derate linearly ..•..•.• 0.029 0.029 0.029 0.029 0.67 0.66 wiDc
TA .;;; 250 C •..••••.......••.•.• 1 1 1 1 W
Tstg. TJ ...............•...•...... - - -65 to 200 - - - -65 to 200 DC
T L lOuring soldering):
At distances ~ 1116 in.l1.58 mm)
from case for 10 s max. .......... ---230 - - - -235-- DC
~8_· _________________________________________________________________
~ _____________________________________________________ POWERTRANSISTORS
40310-40314,40316-40319,40321-40325,40327,
40362,40363,40537,40538
Types: 40321,40323,40327, n-p-n

Package: JEDEC TO-39
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI= 2fiOC Unless Otherwise
Specified
LIMITS
CHARAC- TEST CONDITIONS 40321 40323 40327 UNITS
TERISTIC Min_ Max_ Min. Max. Min. Max.
V CB=15 V, I E=O, T C=250 C - - - 0.25 - - p.A
ICBO
VCB=150 V,IE=O,TC=150o C - 0.1 - 1 - 0.1 mA
ICER VCE=150 V,RBE=1000 n - 5 - - - 5 p.A
lEBO
VBE=-2.5 V (40323) - - - 1 - - mA
VBE=-5 V (40321,40327) - 0.1 - - - 0.1
VCEO(sUS) 1C"100 mAo - - 18 - - - V
VCER(sus) IC-50 mAo,RBE-l000 n 300 - - - 300 - V
VCB=4 V,IC-50 mA "(40323) - - - 1 - -
VBE VCB=10 V,IC=50 mA" V
(40321,40327 )
- 2 - - - 2
VCE=4 V,IC=50 mA *(40323) - - 70 350 - -

hFE VCE=10 V,1c=20 mA *
(40321,40327)
25 200 - - 40 250 Audio
Type Prototype
fT VCE=10 V,IC=50 mA - - 100 typo - - MHz
40321 2N3439
ROJC - 35 - 35 - 30
oCIW 40323 2N2102
ROJA 1175 40327 2N3439
* Pulsed: Pulse duration = 300 /lS, duty factor ;;;; 2%.
For characteristics curves and test conditions. refer to published data for prototype.'
Types: 40311,40314,40317, n-p-n 40319, p-n-p

ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 2fiOC Unless Otherwise
Specified
LIMITS
CHARAC-
. 4031~
TERISTIC TEST CONDITIONS'" 40311 40314 4031 UNITS
Min. Max. Min. Max Min_ Max.
VCB-15 V, IE-O
ICBO TC=250 C - 0.25 - 0.25 - 0.25 p.A
TC~150oC - 1 - 1 - 1 mA
lEBO VBE 2.5 V 1, 1 1 mA
VCEO(sUS) IC-l00 mAo 30 - 40 - 40 - V
VCE-4 V
VBE IC=10 mA*(40317);1c=50 mA - 1 - 1 - 1 V
(40311,40314,403191
VCE(sat) IC=150 mA", IB=15 mA - - - 1.4 - _l.4t V
VCE-4 V 40 200
hFE IC=10 mA*(40317);IC= Audio
.50 mAo (40311,40314,40319) 70 350 70 350 35- 200· Type Prototype
VCE-l0 V(40311l;VCE-4 V 40311 2N2102
fT 100 typo 100 typo 100 typ.- MHz
(40314,403191.1C=50 mA
40314 2N2102
ROJC - 35 - I 35 - I 35
°C/W 40317 2N2102
ROJA - 175 - 175 - 175
40319 2N4036
.. For p-n-p devices, voltage and current are negative.
• 40319 *Pulsed: Puis. duration = 300 /lS, duty factor;;;; 2%.
For characteristics curves and test conditions, refer to published data for prototype.
_____________________________________________________________________ 459
POWER TRANSISTORS ________________________________________________________
40310-40314,40316-40319,40321-40325,40327,
40362,40363,40537,40538
Types: 40362,40537,40538, p-n-p
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) ~ 2SOC Unless Otherwise
Specified
LIMITS
CHARAC-
TERISTIC TEST CONDITIONS 40362 40537 40538 UNITS
Min. Max. Min. Max. Min_ Max.
VCE=-45 V,RSE=500 n,
TC=250 C - - - -10 - 1--10
VCE=-65 V,RSE=1000 n,
'CER TC=250 C - -1 - - - - JlA
VCE=-60 V,RSE=1000 n, - -100 - - - -
TC=150o C
V SE-4 V - -1 - rnA
'ESO
VSE=5 V - - - -1 - -1
'C=-100 rnA *,RSE=500 n - - -55 - -55 -
VCER(sus) V
'C=-100 rnA *,RSE=1000 n -70 - - - - -
VCE=-4 V,IC=-50 rnA* - -1 - -l.B - - V
VSE
V CE=-4 V,IC='-500 rnA * - - - - - -2.7
'C--50 rnA *,IS--5 rnA - - - 1.1
VCE(sat) IC=-150 rnA *, 'S=-15 rnA - -1.4 - - - - V
IC=-500 rnA *,IS=-50 rnA - - - - - -2
Audio
VCE--4 V,IC--50 rnA * 35 200 50 300 - - Type Prototype
hFE
VCE=-4 V,IC=-500 rnA* - - - - 15 90
40362 2N4036
fT VCE---4 V,IC--50 rnA 100 typo 100 typo 100 typo MHz 40537 2N4036
ROJC - 35 - - - - 40538 2N5322
°C/W
ROJA 175 175 175
2N5320
*Pulsed: Pulse duration = 300 PS, duty factor ~ 2%.

Types: 40310,40312,40316,40324, n-p-n

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) ~ 250 C Unless Otherwise
Specified
LIMITS
CHARAC- 40310
VCS-15 V,IE-O
'CSO Tc=25 0 C - 10 - 10 - 10 JlA
TC=150o C - 5 - 5 - 5 rnA
'ESO
V SE--2.5 V - 5 - - - 5 rnA
VBE=-5 V - - - 5 - -
VCEO(sus) - - -
Ic=100 rnA * 35- 35 - V
Audio
VCER (sus) 'C=100 rnA ',R SE=500 n 60# - 40 - - - V
Type Prototype
VSE VCE=2 V,IC=l A * - 1.4 - 1.4 - 1.4 V
40310 2N3054
hFE VCE=2V,IC-l A* 20 120 20 120 20 120
40312 2N3054
fT VCE-4 V,IC-500 rnA 750 typo 750 typo 750 typ, kHz
40316 2N3054
ROJC - 6 - 6 - 6 °C/W
40324 2N3054
- 40310 # 40312 *Pulsed: Pulse duration == 300 }JS. duty factor ~ 2%.
460 ______________________~--------------------------------------------_
40310-40314,40316-40319,40321-40325,40327,
40362,40363,40537,40538
Types: 40313.40318.40322. n-p-n

ELECTRICAL CHARACTERISTICS. At Case Temperature (TC) = 2fiOC Unless Otherwise
Specified
LIMITS
CHARAC-
ICED VCE=150 V,IB=O - 5 - 5 - rnA -
VCE=150 V (4031B),VCE=
300 V (40313), VBE=
ICEV -1.5 V, TC=250 C -- 10 - 5 - - rnA
TC=150o C - 10 - 10 - -
lEBO
VSE=-2.5 V - 5 - - - - rnA
VSE=-6 V - - - 5 - 5
VCER(sus) IC-200 rnA',RSE-200 n, 300 - 300 - 300 - V
L=500 rnH
VCE=10 V,IC=100 rnA" - 1.5 - - - - V
VSE IC=500 rnA" - - - 1.5 - -
VCE=10 V, IC=500 rnA" 40 - 50 - 75 -
hFE IC=100 rnA' 40 250 - - - - Audio
IC=20 rnA' - - 40 - 40 - Type Prototype
I Sib VCE=150 V 150 - 100 - 100 - rnA 40313 2N3585
ESIb VSE=-4 V - - 50 - 50 - IlJ 40318 2N3585
ROJC - 5 - 5 - 5 °C/W 40322 2N3585
• Pulsed: Pulse duration = 300 /-15, duty factor';;; 2%.
Types: 40325,40363, n-p-n

Package: JEDEC TO-3
ELECTRICAL CHARACTERISTICS. At Case Temperature (TC) = 2fiOC Unless Otherwise
Specified
LIMITS
CHARAC-
TEST CONDITIONS 40325 40363 UNITS
TERISTIC
Min. Max. Min. Max.
VCS=30 V, TC=250 C - 5 - - rnA
ICSO TC=150o C - 10 - -
VCE=60 V,RSE=200 n,
ICER
TC=250 C - - - 1
rnA
TC=1500 C - - - 10
VSE=-5 V - 10 - - rnA
IESO
VSE=-4 V - - - 5
VCEO(sus) IC=200rnA' 35 - - - V
VCER(sus) IC=200 rnA ',RBE=200 n - - 70 - V
VCSO IC-IOO rnA,IE=O 35 - - - V
VCE=4 V, IC=8 A' - 2 - - V
VSE IC=4 A* - - - 1.8
VCE(sat)
IC=8 A*,IS=800 rnA - 1.5 - - V
IC=4 A *,IS=400 rnA - - - 1.1
hFE
VCE=4 V, IC=8 A* 12 60 - - Audio
IC=4 A* - - 20 70 Type Prototype
fT VCE=4 V,IC=3 A - - 700 typo kHz 40325 2N3055
ROJC - 1.5 1 1.5 uc/w 40363 2N3055
'Pulsed: Pulse duration = 300 /-15. duty factor';;; 2%.
________________________________________________________________________ 461
POWER TRANSISTORS
40406,40408,40410,40407,40409,40411
Features:
Silicon N-P-N and P-N-P Power Transistors 40406 & 40407
For Audio-Amplifier Applications • VCEO(sUS) =-50 V min. (40406)
• VCEO(sus) = 50 V min. (40407}
RCA-40406-40411, inclusive, are diffused- 40408 are supplied in JEDEC TO-39 her- • 40406 is p-n-p complement of 40407
junction silicon n-p-n and p-n-p transistors metic packages; types 40409 and 40410 • 1 W dissipation rating
intended for use in audio amplifiers. Giving are in TO-39 packages mounted on integral
high-quality performance economically, these heat radiators. The 40411 unit, intended 40408
'six devices have power dissipation ratings for use in audio output stages, is in a
of 1 to 150 W. Types 40406, 40407, and steel JEDEC TO-3 hermetic package. • VCEO(sus) = 90 V min.
• 1 W dissipation rating
40409 & 40410
• VCER(susl =90 V min. (40409)
40406 40407 40408 40409 40410 40411 • VCER(sus) =-90 V min. (40410)
VCEO(sus} ...... ...... . -50 50 90 V • 40410 is p-n-p complement of 40409
• 3 W free-air dissipation rating
VCER(sus} 90 -90 90 V
RBE = 1oo.!l .. . ....... 40411
VEBO ............. .. . -4 4 4 4 -4 4 V • VCER(sus) =90 min.
IC ............... ... . -0.7 0.7 0.7 0.7 -0.7 30 A • Hometaxial-base construction
IB .............. . . . . -0.2 0.2 0.2 0.2 -0.2 15 A
• 150 W dissipation rating
PT:
TA ..;25'C ...........
.. W
TA ..; 5O'C ..... ..... c
'Q5
" . 3 3 W
TC ..;25'C ..... . .... . . 150 W
TJ ......... . ...... .
. -65 to +200 °c
JEOEC TO-3 _
COI..LECTOR·'TO.£MITTER VOLTAGE !VCE1'-4V

! COLLECTOA~TO-EMITTEA VOLTAGEIVa:I~ I~~-l.-
~~
AMBIENT TEMPERATURE ITA I. 2$'C
Oloo~~~tr~~+++-+-~~~~~H
.
i ~ ',: II Ill~~--
~ II -+ ~.*
i 10
- .o~F~~+++-+-+1~-4-4~H-~~~
"-
~
~
~
""",,--- II--P.
~~7
'I';~L_ -
~
:P'
JEOEC
~ IOO--~~- f- /' T0-39
t$'~
, 40I-t-H-t+-+-++t+-++f-HI-I-\-f'H1 III
-'~ (See dlmenelonal outline "C".)

~ '-,t -- -
; ~I--t-++-t+-+-++t+-++f-HI-~~lrl l:,y HEAT
Bfik~~"
~
~
-0.1 _I -10 2 .. 6 !I02 2

Cot..LECTOII: CURAENTI1cl-IIIA
.. 6 '-10]
g
OJ
, . 10
,
COLLECTOR CURRENT tIcl-1IIA
.. , ., o 0 TABS
!tZCS-U427RI
E
Fig. 1 - Typical dc beta characteristic for Fig. 2 - Typical de lieta charaCteristics for
40406 and 40410. 40401, 40408, and 40409_ JEDEC TO-39
with Heat Radiator
(5.. dlmenelonal outline "0",)
COlLECTOR-TO-EMITTER Wt.'AGE IllcEl -4V - COLLECTOR-lO-EMITTER VOLTAGE {VeEI' -4V

AMBIENT TEMPERATURE (TAI"2S~C
I/
~ - ".i I I
r ., -e'I-------I---I---+--_+_ --If-------l
I,
E
.\, I :
~ -&1---+--4--
~ i ,I I 1
I !---r ~k
J"
CAlE TEtIIJI£RAT1JRElTc)-m-t
i
,I
1- 41---t-------t- -t---+--+-
I
jl--+--------i
I !
I TC.eo-c ......
~ II
-,f---I---4f--~-~~-~-~
4
I 1,1
8
Q'
I
,
l'~
10 -0.2 -0.4 -o.e
~ -0.8 -, -1.2
COLLECTOfI CURfIENT 11(:1-_ BASE-Ttl-EMITTER VOLTAGE (VBEI-V
82CS-2204URI
BASE-TO-EMITTER VOLTAG£ (V8£I-V
...........
Fig_ 3 - Typical dc beta char8cteristics for Fig. 4 - Typical input characteristic for Fig. 5 - Typical input characteristic. for
40411_ 40406 and 40410_ 40401, 40408, and 40409.
482 _____________________________________________________________________
40406,40408,40410,40407,40409,40411
ELECTRICAL CHARACTERISTICS, TC = 25" Unless Otherwise Specified
TEST
LIMITS
CONDITIONS
CHARACTER· VOLT· CUR· 40406# 40409
40407 40408 40411
ISTIC AGE RENT 40410#
Vdc Adc
VCE IC 18 Min. Max. Min. Max. Min. Max. Min. Max. UNITS
ICBO
IE = 0
10· - 0.25 - - - - :- - /1 A
ICEO 40 - 1 - - - - - - /1 A
BASE-TO-EM1UER VOLTAGE (VSE)- v
80 - - - 1 - - - -
Fig. 6 - Tvpical input characteristics for
Tc = 1500 C 40411.
40406 40 - 0.01 - - - - - -
40407 40 - 0.1 ..: - - - - - mA
40408 80 - - - 0.25 - - - -
ICER
RBE = 100 Do
80 - - - - - 1 - 500 /1 A
TC = 150 C 0
80 - - - - - 0.1 - 2 mA
lEBO
VBE = -4 V 0 - 100 - 100 - 100 - 500 /1 A
VCEO(sus) O.la a 50b - 90 b - - - - - V
VCER(sus) 0.1 - - - 90 - - - V
RBE = 100 Do 0.2 - - - - - 90 -
COLLECTOR-IO-EMITTER VOLTAGE (VcE)-V
VBE 10 O.OOl a - O.Be - - - - - -

4 O.Ol a - - - 1 - - - - Fig. 7 - Tvpica/ output characteristics for
- - V
4 0.15a - - - 1 - - 40406 and 40410.
4 4a - - - - - - - 1.2
0.15a 0.015 - - - 1.4 - 1.4 - -
VCE(sat) V
4a 0.4 - - - - - - - O.B
40406 10 '0.1 mAa 30 200 - - - - - -
40407 10 0.001" 40 200 - - - - - -
hFE 40408 4 O.Ol a - - 40 200 - - - -
40409·10 4 0.15a - - - - 50 250 - -
40411 4 4a - - - - - - 35 100
hfe
f = 20 MHz 10 0.05 6' - - - - - - -
fT
4 0.05 100 (tyP.) 100 (typ.) 100 (typ.) - - MHz
4 4 - - - - - - 800 (tyP.) kHz Fig. 8 - Tvpical output characteristics for

Cobo 40407,40408, and 40409.
IE = 0 10· 15' - - - - - - - pF
CA~E TEWPERATURE (Tel. ,:'"C
f = 1 MHz
ISlb
t = ls nonrep
30 - - - - - - 5 - A
BASE CURRENT (I I- 600 mA
ReJC - 35 - 35 - - - 1.17 40
°C/W
ReJA - 175 - 175 - 50 - - 200
100
# For p-n-p devices, voltage and current values are b CAUTION: The sustaining voltage VCEO(sus)
negative MUST NOT be measured on a curve tracer.
• VCB ' 40407 only VCEO(sus) should be measured by the pulse
a <
P'Jlsed; pulse duration := 300 Jj.S, duty factor 2%
method (Note 'a'). o.~ lO I.' 2.0 2.1:1 3.0 3.'
COLLECTOR-tO-EMITTER VOlTAGE (VCEJ-V
".0
c 40406 tested at IC = -0.1 mA
Fig. 9 - Tvpica/ output characteristics for
40411.
________________________________________________________________________ 463
POWERTR~NSISTORS ____________ ~ _____________________________________
40631
Hometaxial-Base Silicon N-P-N VERSAWATT Transistors

Designed for Medium-Power
Linear and Switching Applications Features:
• High dissipation ratings
The RCA-40631 isa hometaxial base silicon The 40631 is supplied In the JEOEC TO-
n-p-n transistor intended for a wide variety 220AA formed-lead version of the VERSA-
of medium-power applications. The home- WATT flame retardant plastic package for Applications:
taxial-base construction of this device ren- use with T0-66 sockets.,
ders it highly resistant to second breakdown • Series and shunt regulators
over a wide range of operating conditions.
The 40631 is intended especially for use in
driver and output stages in high-fidelity • Solenoid drivers
audio-amplifier circuits.

VeER(,u,) 40631
RBE = 100 n .................. ". . . .. . .• . . . . . . . . . 45 V
V EBO .........................• ,................ 5 V
,.:_,£1
Ie .. , ...... ........ ..... ........ .... .•...... .... 4 A
~:
IB ........... ................................... 2 A
PT :
At Te '" 250 e ........•....................... 36 W
At Te > 25 0 e .........•.. . . . . .• Derate linearly 0.288 wloe
92CS-2:7!520
AtTA "'250 e ...................•............ lB W
TJ , T.tg ... .... .. ... .... ...... ...... .... . .. . ...... -65 to +150 °e BOTTOM VIEW
TL JEDEC TO-220AA
At distances ;;;. 1/32 in. (0.8 mm) from seating plane (See dlmenolonal oulllne "R".)
for 10. max. 235 De
ELECTRICAL CHARACTERISTICS, At Case Temperature ITCl = 2fiOC ~

VOLTAGE CURRENT
CHARAC· 40631 UNITS
Vdc Adc
TERISTIC
VCE VBE IC IB Min. Max.
ICER 20 - - rnA
RRF = lOOn 40 - 0.5
-4 0 - - rnA
lEBO -5 0 - 1 no COLLfCTOR. TO-Olln!R
VCER(sus) O.la - - ...t 1DD Jl J-- VOL TACIE ~CEt•• y
0.2a 45 - V
. 1-1- JJ:11.1.
/:1
5m .
RBE=100n
~~
hFE
4 1a - - Jl /~/'
..I--l- ~L<-"
7D
4 2a 20 70 ~
1a 0.05 - - ~
V pLA
Is "~ 7#7
VCE(sat) 2a 0.2 - 1
~~
4 1a - - V l1\
VBE
Ihlel
4
4
2a
0.2
-
2
1.5
-
."
R"
~
10 1\
f = 0.4 MHz
R8JC - 3.5
oCIW
I I ..
10"'
I 101
CCl.~ CURRENT {le>-A

I I I. I I I.
R8JA - 70
Fig. 1 - Typical de beta characterlstit,.
a Pulsed: Pulse duration. 300 "', duty factor '" 2%. (or 40631.
464~ ______ ~ ________________________________ ~ ____ ~ ________ ~ ____ ~~

POWER TRANSISTORS
40631
1,S COLLECTOR·YO·EMITTER VOL aGE tVeE)' ~ V
CASE TEMPERATURE (T l' 2S~ C
I"
1 i a lo I "100 "1.000
COLLECTOR CURRENT (ICI- .....
B.l.SE·TO-EItIHTER VOLTAGE (VSE) _ v COLLECTOR. TO-flUTTER VOLTACE (Vee) _ v
Fig. 2- Tvpical gain-bandwidth product Fig. 3- Tvpical transfer characteristics Fig. 4- Tvpical output characteristics
for 40631. for 40631. for 40631.
------__________________________________________________ ~-----------465
40850,40851,40852,40854
450-V Silicon N-P-N Power Transistors Features:

• High-voltage ratings for operation from power
For Off-Line Switching-Regulator Type Power-Supply Applications lines without a step-down transformer
• Popular JEDEC T0-3 and T0-66 hermetic
The RCA-40S50, 40S51, 40S52, and 40S54 These devices have sufficient voltage capa- packages
are n-p-n types selected from RCA's line bility to be used as push-pull inverters or
of silicon power transistors for power-supply pulse-width-modulated inverters operating di-
applications_ Their high-voltage ratings per- rectly off the 120-V power line; they can
operate as swit~hing regulators off a 240-V
Applications:
mit operation directly off the power line
line; for 120-V lines, the prototypes can be • For use in switching-regulator supplies which
thereby eliminating the heavy and bulky
used_ feature:
60-Hz power transformer; their fast switch-
ing speeds permit operation above the audio- -A substantial reduction in size and weight
frequency range (20 to 30 KHz) for quiet due to elimination of the 6O-Hz power
transformer _
performance and permit the use of small
ferrite-core transformers for changing volt- -Operation with a substantial reduction of heat
age levels_ • 5-V, off-line supplies with Current ratings of
25,50,100, or 200 A
• 3D-V, off-line supplies with current ratings of
MAXIMUM RATINGS,Absolute-Maximum Values: 5, 10, 20, or 40 A
40850 40851 40852 40854

Vcso· 450 450 450 450 V
VCEO(susl 300 350 350 300 v
VCER(susl
R SE ';; 50 n 400 375 375 325 V
VESO · 6 9 9 6 V
IC · 2 7 15 A
ICM
'v
(For 10 ms max.) . 5 10 10 30 A
c
IS· 4 4 10 A
PT :*
TC';; 25°C. 35 45 100 175 W
TC> 25°C. Derate linearly to 200°C
T J , T stg -65 to +200 °c "u",,, ..
T L (During soldering):
JEDEC TO-3
At distances> 1/32 in. (0.8 mm)
from case for 10 s max. 230 °c 40852
40853
* Safe..operating-area curves for prototype devices should be extended to the maximum values of collector
current for these devices. (See dlmenslona' oulllne "AU.)
Type 4OS50 (For 5-V, 25-A & 30·V, 5-A Power Supplies)
Package: JEDEC TO·66
ELECTRICAL CHARACTERISTICS,At Case Temperature (Tei = 250 C, c
'0
LIMITS
SYMBOL TEST CONDITIONS UNITS
MIN. MAX.
ICEV VCE = 450 V, VBE = -1.5 V - 0.2 rnA
VCE = 450 V, VBE = -1.5 V, TC = 1250 C - 2 mA JEDEC TO-66
ICEV
VCEO(sus)a IC - 0.2 A, IB-O 300 - V 40850
40851
VCER(sus)a IC = 0.2 A, RBE = 50 n 400 - V
(See dimensional oulllne "N".)
VEBO IE = 5 mA, Ic = 0 6 - V
hFE IC = 0.75 A, VCE = 10 V· 25 -
VCE(sat) IC = 2A, IS =O.4A - 2.0 V
VBE(sat) IC-2A,IB-0.4A - 2.0 V
IS/ba VCE-100V 0.35 - A
ES/ba L = 1001lH, Ic(PEAK) = 2 A, RBE = 20 n 0.2 - mJ

VBE = -4 V
.a For characteristics curves and test conditions, refer to published data for prototype 2N3585
466 __________________________________________________________________
40850,40851,40852,40854
Type 40851 (For 5-V, 50-A & 3~-V, 10-A Power Supplies)
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 2fiOC,
LIMITS
MIN_ MAX.
ICEV VCE = 450 V, VBE = -1.5 V - 0.5 mA
ICEV VCE = 450 V, VBE = -1.5 V, TC = 125°C - 5 mA
VCEO(sus)a IC = 0.2A,IB =0 350 - V
VCER(SUS)a IC = 0.2 A, RBE = 50 D. 375 -- V
VEBO IE = 1 mA, Ic = 0 9 - V
hFE IC = 1.2 A, VCE = 1.0 V 12 -
VCE(sat) IC=4A,IB=0.SA - 3 V
VBE(sat) IC= 4A,IS = O.SA - 2 V
IS/ba VCE=50V 0.9 - A
ES/ba L = 100 I1H, IC(PEAK) = 3 A, RBE = 50 D. 0.45 - mJ
VBE =-4 V
a For characteristics curves and test conditions. refer to published data for prototype 2N6079
Type 40852 (For 5-V, 50-A & 30-V, 10-A Power Supplies
Package: JEDEC TO-3
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tci = 250 C,
LIMITS
MIN. MAX.
ICEV VCE = 450 V, VBE = -1.5 V - 0.5 mA
ICEV VCE = 450 V, VBE = -1.5 V, TC = 125°C - 5 mA
VCEO(sus)a IC=0.2A,IB=0 350 - V
VCER(sus)a IC = 0.2 A, RBE = 50 D. 375 - V
VEBO IE = 1 mA,lc = 0 9 - V
hFE IC= 1.2 A, VCE = 1.0V 12 -
VCE(sat) IC=4A,IB=0.SA - 3.0 V
VBE(sat) IC= 4A,IB = O.SA - 2.0 V
IS/ba VCE = 40 V 2_5 - A
ES/ba L = 100 I1H, IC(PEAK) = 3 A, RBE = 50 D. 0.45 - mJ
VBE = -4 V
a For characteristics curves and test conditions, refer to published data for prototype 2N5240
__________________________________________________________ 467
40850,40851,40852,40854
Type 40854 (For 5-V, 200-A & 30-V, 40-A Power Supplies)
Package:JEDEC TO-3
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2fiOC,
LIMITS
SYMeOL TEST CONDITIONS UNITS
MIN_ MAX.
ICEV VCE = 450 V, VSE = -1_5 V - 1.0 mA
ICEV VCE = 450 V, VSE = -1.5 V, TC = 1250 C - 10 mA
VCEO(sus)a IC=0.2A,IS=0 300 - V
VCER(sUs)a IC = 0.2 A, RSE = 50 n 325 - V
VESO IE=5mA,lc=0 6 - V
hFE IC = 10 A, VCE = 4 V 8 -
VCE(sat) IC= 16A, IS = 3.2A - 3 V
VeE(.at) IC = 16A, Ie = 3.2A - 3 V
IS/ba VCE = 30 V 5.8 - A
ES/ba L =50IlH, IC(PEAK) = lOA, RSE = 50n 2.5 - mJ
VSE = -4 V
a For characteristics curves and test conditions, refer to published data for prototype 2N6251
468 _________________~----------------------------------------
MJ15001, MJ15002
Complementary N-P-N/P-N-P Silicon Power Transistors

Features:
Rugged Devices, Broadly Applicable For Industrial and Commercial Use
The RCA-MJI5001 and MJ15002 are bal- MJ15001 n-p-n transistor complements the
lasted epitaxial-base silicon transistors fea- MJ15002 p-n-p transistor. These types are
turing high gain at high current- The supplied in the JEDEC TO-204MA packages_ . fT ; 2 MHz
MAXIMUM RA TI NGS, Absolute-Maximum Values_· Applications:

MJ15001 MJ15002
V CBO · 140 -140 v
V CEO · 140 -140 v • High-fidelity amplifiers
V EBO · 5 -5 V
Ie· 15 -15 A
IB . 5 -5 A • Solenoid drivers
IE . 20 -20 A
PT
At T C ~ 25° . 200 -200
> c
'0
At TC 25°e 1.14
T stg • T J -65 to 200
TL
At distance ~ 1/32 in. (G.B mm) from seating plane
for 10 s max. 230
JEDEC TO-204MA

(TC) ; 25° C Unless Otherwise Specified

VOLTAGE !CURRENT
CHARACTERISTICS MJ15001 MJ15002 UNITS
Vdc Adc
ICEX 140 1.5 - 1 - -1
rnA
TC = 150°C 140 1.5 - 2 - -2
ICEO 140 0 - 2.5 - -2.5 rnA
lEBO 5 0 - 1 - -1 rnA
VCEO(sus)a 0.2 0 140 - -140 - V
hFEa 2 4 25 150 25 150
VBE 2 4 - 2 - -,2 V
VCE(sat) 4 0.4 - 1 - -1 V
IT I; 0.5 MHz 10 0.5 2 - 2 - MHz
ISlb tp - 1s
40 5 - -5 -
A
100 0.5 - -0.5 -
Cob
VCB = 10 V - 1000 - 1000 pF
f; 1 MHz
ROJC - 0.875 - 0.875 °C/W

a CAUTION: Sustaining voltage, VCEO(sus), MUST NOT be measured on a curve tracer.
________________________________________________________________________ 469
POWER TRANSISTORS
MJ15001, MJ15002
COlLECTOR-TO-EMITTER VOLTAGE IVCEI- V

92C .... 3048~
Fig. 1 - Maximum operating area for both types.
..
~KU): COLLECTOR- TO-EMITTER VOLTAGE (VC£'-2 V -
!
.
..'000, C~LEC~~lnER
of
VOLTAGE (VC£'--2 V =-+
0
~~2~_ "~ I T
~
¢
~.
S:
'00
2
~P'Ef\,.,,.\,\"'E
P-c)sf. \1C'-
,Ell. 'Z.~.c
......
~IOOe
o
~ .
z
• ~SE
1 l!!.,·
TEMPERATURE
(Tc,-2'·C
I
~ 2 Ii •
..
z
¢ ~
a '0,
··•
¢
~
'0 «
u
0
~ i
~
" 100 IZS
CASE tEMP"E"ATURE (TC)_·C
!!,
0.01
,
2 ... .. , ... ...
0.1
2
I
2
10
2
100
COLLECTOR CURRENTCrc)-A .2CS.,0141
~
g,
-0.01 Z .. 6.'0.1 2 .. 68_ 1 2
COLLECTOR CURRENT (I.e)-A
.. 61!.,o 2 .. 6!IOO
Fig. 2 - Current derating curve for both types. Fig. 3 - Typical de beta characteristics as a function Fig. 4 - Typical dc beta characteristics as a function
of collector current for MJ 1500 1. of collector cur;ent for MJ1500?
IASE-TO-EMITTER VOLTAGE (V 8EI-V' 92(5-301"8 BASE-TO-EMITTER VOLTAGE (Ver:1-V
Fig. 6 - Typical input characteristics (or MJ15002.

Fig. 5 - Typical input characteristics for MJ15001. Fig. 7 - Typical transfer characteristics for MJI5001.
470 _______________________________________________________________________
MJ15001, MJ15002
I I
BASE·TO·EMITTER \/OLTAGE ("BEl-V COLLECTOR CURRENT IIcl-A
Fig. 9 - Typical saturation voltage characteristics Fig. 10 - Typical saturation voltage characteristics
Fig. 8 - Typical transfer characteristics for MJ15002. for MJI500 I. for MJ15002.
_______________________________________________________________ 471
POWER TRANSISTORS
MJ15003, RCA3773, RCA8638C, RCA8638D, RCA8638E

Features:
Rugged Devices, Broadly Applicable For Industrial and Commercial Use
The RCA3773, MJ15003, RCA8638C, RCA- They differ in voltage ratings and in the
86380, and RCA8638E are ballasted epi- currents at which the parameters are con-
• fT·~ 2 MHz
taxial-base silicon n-p-n transistors featuring trolled. All are supplied in the steel JEOEC
high gain at high current. They may be used TO-204MA packages.
as complements to the p-n-p types 2N6609,
MJ15004, RCA9116C, RCA91160, and RCA- Applications:
9116E, respectively.
MAXIMUM RATINGS, Absolute-Maximum Values: • Power-switching circuits
RCA3773 MJ15003 RCAB638C RCA8638D RCA8638E
V CBO ' 160 140 140 120 100 v
VCEX!sus)
V BE =-I.5V;R BE =100n 160 V
VCER!sus)
130 110 V c
'0
RBE = 100 n 150 150 150
VCEO!sus) 140 140 140 120 100 V
VEBO V
IC 20 A
lB' 5 A
PT
At T C ';;;;25°C 150 250 200 200 200 W
AtTC>25°C Derate linearly 0.857 1.43 1.14 wtc
T stg • T J -65 to 200 °c
TL JEDEC TO-204MA
At distance ~ 1/32 in. 10.8 mm) from (See dimensional oulllne "A ".)
seating plane for 10 s max .. 230 °c
50 75 100 125 150 175 200

CASE TEMPERATURE (TC1- ac 92.lS-1469RI
z +++1\.+-1-1+
~ I08+:~~±±~~~t±E=~~3iE===Ei~
o :r
z .~+_~rW~~~~_4--~~~_4~~
040
COLLECTOR- TO-EMITTER VOLTAGE (VCEI- V
Ig, z~+_~~---~~~_4--~~~_4~~
2468246824682468
Fig. 1 - Maximum operating areas for all types. 0.01 0.1 1 10 100
COLLECTOR CURRENT LIe )-A 92CS-301"6
Fig. 3 - Typical dc beta characteristics as a function

of collector current for all types.
472 _____________________________________________________________________
POWER TRANSISTORS
MJ15003, RCA3773, RCA8638C, RCA8638D, RCA8638E
ELECTRICAL CHARACTERISTlCS,at Case Temperature (TC) = 25"C

Unless Otherwise Specified (Cont'd)
TEST CONDITIONS
LIMITS
CUR-
VOLTAGE
CHARAC- RENT
Vde RCA8638C RCA8638D RCA8638E UNITS
TERISTIC Ade
VCE VBE Ie Min. Max. Min. Max. Min. Max.
140a - 1 - - - -
ICBO 120a - - - 1 - -
100a - - - - - 1
140 1.5 - 1 - - - -
ICEX 120 1.5 - - - 1 - -
ICEX 140 1.5 - 5 - - - -
T C = 150°C 120 1.5 - - - 5 - - rnA
ICED 70 - 1 - - - -
IB = 0 60 - - - 1 - -
lEBO 5 - 1 - 1 - 1
hFE 2 5C 25 150 25 150 - -

2 7.5 e - - - - 10 100
2 10c 10 - 10 - - -
VCER(sus)b
0.2 150 - 130 - 110 -
R BE ";; 100\2
VCEO(sus)b 0.2 140 - 120 - 100 -
VEBO a 5 - 5 - 5 - V
IE = 1 rnA
VBE 2 75c - - - - - 3
2 5c - 2 - 2 - -
VCE(sat)
IB = 0.75A 7.5 c - - - - - 1.5
= 0.5A 5C - 1 - 1 - -
ISlb
tp = 1 s 35 5.71 - 5.71 - - -
A
nonrep. 25 - - - - 8 -
Ihle l - 4 -
10 0.5 4 -
4
1= 0.5 MHz
IT 2 - 2 - 2 - MHz
Cob loa - - 500 - pF

500 500
f = 0.1 MHz
ROJC 10 10 - 0.875 - 0.875 - 0.875 °C/W
a V CB b CAUTION: Sustamtng voltages VCEX(sus), VCER(sus), and C Pulsed; pulse duration::o 3001!s,
n==__
VCEOfsus) MUST NOT be measured on a curve tracer. duty factor = 1.8%.
~~ ~.
COLLECTOR CURRENT -A BASE-lO-EMITTER VOLTAGE (VeEI-V

Fig. 4 - Tvpical saturation voltage characteristics 9ZCS-30148
for all types. Fig. 5 - Typical input characteristics for all types.
473
POWER TRANSISTORS
MJ15003, RCA3773, RCA8638C, RCA8638D, .RCA8638E
ELECTRICAL CHARACTERISTICS. at Case Temperature (TC) = 25°C Unless Otherwise

Specified
VOLTAGE CUR-
CHARAC-
Vdc RENT UNITS
TERISTIC Adc RCA3773 MJ15003
VCE VBE IC Min. Max. Min. Max.
ICBO 160a - 4 - -
140a - 2 - 1
ICE X 140 -1.5 - 1 - 0.1 0.2 1.4 I.e
BASE-TO-EMITTER VOLTAGE (VeE'-V
2.2 Z.6
ICEX 140 -1.5 - 5 - 2

TC = 150°C Fig. 6 - Typical transfer characteristics for all types.
rnA
ICEO 140 - - - 0.25
IB= 0
120 - 1 - -
lEBO
7 - 1 - -
5 - - - 0.1
hFE 4 BC 15 60 - -
4 16 c 5 - - -
2 5c - - 25 150
2 10c - - 10 -
VCEX(sus)b -1.5 0.2 160, - - --

RBE = 10011
Fig. 7 - Typical saturated-switching times for
VCER(sus)b all types.
0.2 150 - 150 -
RBE';; 10011
VCEO(sus)b 0.2 140 - 140 - 27.s1.,2W
6SERIES-cor.wECTED
VEBO 0 7 - 5d - J.W. MILLER NO 2eal.
OR EQUIVALENT
OSCILLOSCOPE INPUT
tEWL.ETT-PACKARD
MODEL NO. 1308,
IE= 1 rnA OR EQUI'WIoI.ENT
1
CLARE NERCURYRELAV
HO"Z'~
4 BC - 2.2 - .- V MODEL. ~.HGP-I045
OR EQUIVALENT
VBE
2 5c - - - 2 --~
VCE(sat)
120 V
60Hz
"". OTO!50V
IB = 3.2A 16c - 4 .- - (~IIIAI
= O.BA SC - 1.4 - - VERT.
= 0.5A 5c - - - 1 ,.•
ISlb 100 1.5 - 1 -
tp = 1 5 50 - - 5 - A L. 21 ..H FOR VceoCIUI)
ANDIlcERC.... )
nonrep. L_1",H FORVCE;xl1u1J
R·tclOIl
Ihfe l Fig. 8 - Circuit used to measure sustaining

f= 0.5 MHz 10 0.5 4 - 4 - voltages VCEO[sus}. VCER[SUS}.
and VCEX for all types.
fT 2 - 2 - MHz
VCER(,uil
hfe 4 1 40 - - - OR
VCEO (sus) VCEX (sus)
f = 1 kHz
I I I
Cob loa - 500 - 500 pF
f=O.1 MHz
R8JC 10 10 - 1.17 - 0.7 °C/W
b CAUTION: Susta,n,ng vollagos VCExlsus). VCERfsus). and C Pulsed; pulse durallon"= 3OO",s.
VCEOhus) MUST NOT be measured on a curve tracer. duly facIOr = 1.8'1(,.
dMoasuredallE = -0.1 mAo
See figs. 8 & 9. 92CS·15224RI
Fig. 9 - Oscilloscope display for measure-

ment of sustaining voltages. [Test
circuit shown In Fig. 8}.
474
POWER TRANSISTORS
RCA1A01-RCA1A06, RCA1A09-RCA1A11,
RCA1A15, RCA1A16, RCA1A18, RCA1A19
Silicon Transistors for Audio-Frequency TERMINAL DESIGNATIONS
Linear-Amplifier Applications
"RCA 1A-Series" n-p-n and p-n-p silicon transis- N·P·N TYPES
tors are especially characterized for audio- RCA1AOl RCA1All
amplifier applications. They are particularly RCA1A03 RCA1A15
useful as input devices, VBE multipliers for RCA1A06 RCA1A18
biasing, currenlsources, load-line-limiting (pro- RCA1A09
tection) circuits, predrivers, and in some instan-
JEDEC TO-39
ces as complementary drivers. Other applica-
P·N·P TYPES
tions for these devices include audio power
amplifiers, linear modulators, servo amplifiers, RCA1A02 RCA1AlO (See dimensional outline "C n .)
and operational amplifiers. The units are sup- RCA1A04 RCA1A16
plied in the JEDEC TO-39 package, RCA1A05 RCA1A19
MAXIMUM RATINGS, Absolute-Maximum Values: RCA1AOl RCA1A02 RCA1A03 RCA1A04 RCA1A05 RCA1A06
COLLECTOA-TO·BASE VOLTAGE .. . _. Vcea 95 -95 -75 75
With base open. · VCEO 70 -50
With external base-la-emitter resist-
ance (Reel eo lOa n . · VeER 95 -95 -75 75
EMITTER-TO-BASE VOLTAGE. · V EBO -4 -4 -4
COLLECTOR CURRENT. -1 -2 -1 A
'c
BASE CURRENT .. 0.5 -0.5 -1 -0.5 0.5 A
'8
At case temperatures up to 25°C. 10 '0 W
At case temperatures above 25°C. See Fig, 1
TEMPERATURE RANGE:
Storage & Operating (Junction) .. -65 to +200 °c
PIN TEMPERATURE (During Solderlngl:
At distances ~ 1/32 in. (0.8 mml
from case for 10smax. 230 'c
-ABE '" ,on "'R BE ~ 300 n
MAXIMUM RATINGS,Absolute·MaXlmum Values· RCA1A09 RCA1Al0 RCA1All RCA1A15 RCA1A16 RCA1A18 RCA1A19
COLLECTOR-TO·EMITTER VOLTAGE:
With base open. V CEO 175 -175 175 100 -100 10 -10 V
EMITTER-TO·BASE VOLTAGE. ... VEBO -6 -5 -,
COLLECTOR CURRENT. 'c -1 -, -,
0.5 -0.5 0.5 0.5 -0.1 0.5 -0.5
BASE CURRENT. '8 A
At case temperatures up to 25°C ... 10 '0 10 10 10 W
At case temperatures abolle 25°C. See Fig. 1
TEMPERATURE RANGE:
Storage & Operating (Junction) . -65 to +200 °c
PIN TEMPERATURE {DuringSolderingl:
At dlstallces :::::. 1/32 Ill. (D.B mm)
from case for 10 s max. 230 °c
Type RCA lAOl

Package: JEDEC TO·39 Type RCA lA02
Construction: Silicon n-p-n, planar Package: JEDEC TO·39
Construction: Silicon p-n·p, epitaxial planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCJ =
25' C Unless Otherwise Specified ELECTRICAL CHARACTERISTICS, At Case Temperature (TcJ =
LIMITS 2ft C Unless Otherwise Specified

MIN. MAX,
LIMITS
CHARACTERISTIC TEST CONDITIONS MIN, MAx' UNITS
ICEO VCE=50V,IB=0 ~A
ICED VCE = -40 V, IB = 0 -1 ~A

lEBO VEBoo4V,leooO rnA
1---.
lEBO VEB = -4 V. IC = 0 -1 rnA
VCEO Ie = 100 mA 70 V
IT VCE"'4V,IC=50mA 120 MH,
VCEO IC = -0.1 A -50 - V
hFE IC =10mA,VCE"'4V 40 200 IT VCE - -4V, 1C - -50mA 50 MH,
VCE(sat) IC"'150mA,IB'" 15mA 1.4 'V- 1C'" -0.1 mA, VCE '" -lOV 30 200
hFE
VBE IC'" lOrnA. VC~ '" 4V V S-~__V::.B,,-E~. ___.I,_-,IC,,-=_-O,I rnA, VCE = -10V
- -0,8 V
For characteristics curves and test conditions, refer to published For characterIStiCS curves and test conditiOns, refer to published
data for prototype 2N2102 data for prototype 2N4036
_____________________________________________________________________________ 475
POWER TRANSISTORS
RCA1A01-RCA1A06, RCA1A09-RCA1A11
Type RCA lA03 Type RCA1A04
Package: JEDEC TO·39 . Package: JEDEC TO·39
Construction: Silicon n-p-o. planar Construction: Silicon p-n-p, epitaxial·planar
ELECTRICAL CHARACTERISTICS,At Case Temperature ITCI = ELECTRICAL CHARACTERISTICS,At Case Temperature (TCl =
2!fC Unless Otherwise Specified 2!f'C Unless Otherw;seSpecified
.."-
LIMITS LIMITS
CHARACTERISTIC TEST CONOITIONS UNITS CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX. MIN. MAX.
ICER VCE = 85 V, RSE = lOOn - 10 i'A ICER VCE = -85 V, RBE = loon - -10 pA
IESO VES = 4 V,IC = 0 - 0.1 rnA IESO VES = 4 V, IC = 0 - -0.1 rnA
VCER IC = 0.1 A, RSE = lOon 95 - V

,
VCER IC = -0.1 A, RSE = lOOn -95 - V
f,- IC - 0.1 A, VCE = 4 V 50 MHz IC" O.IA,VCE" 4V 50 MHz
hFE IC - 300 rnA, VCE - 4 V 70 300 hFE le= 300 rnA, VCE- 4V 70 300
VCElsat) IC 300mA,ls 30mA 0.8 V VCElsat) IC 300mA,Is 30 rnA 0.8 V
VSE IC - 300 rnA, VCE - 4 V 1.4 V VBE IC 300 rnA, VCE -4V 1.4 V
ISlb VCE=50V,t=0.4s 0.2 - A ISlb VCE = -35 V, t = 0.4 s 0.285 - A

.. ..
For charactenstlCs curves and test conditions, refer to published
.- For characteristics curves and test conditions, refer to published
~data for prototype 2N5322
data for prototype 2N 5320
Type RCA lAOS

Package: JEDEC TO·39 Type RCA1A06
Construction: Silicon p-n-p epitaxial planar Package: JEDEC TO·39
Construction: Silicon n·p-n, planar
ELECTRICAL CHARACTERISTICS, At Case Temperature ITcl =
25" C Unless Otherwise Specified ELECTRICAL CHARACTERISTICS, At Case Temperature ITCI-
. 25°C Unless Otherw;se Specified
CHARACTERISTIC TEST CONDITIONS /--:-:L",IM.,.,I",TS=--i UNITS LIMITS
MIN. MAX. CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX.
,
ICER VCE = -65 V, RSE = loon - -10 ~A
ICER VCE = 65V, RSE = lOon - 10 pA
IESO VES=-4V,IC=0 - -0.1 rnA

IESO VES = 4V,IC = 0 - 0.1 rnA
VCER IC = -0.1 A, RSE = lOOn -75 - V

VCER IC = 100 rnA, RSE = lOOn 75 - V
'T IC =-50mA, VCE --4V 60 MHz
'T IC - 50 rnA, VCE = 4 V 120 MHz
hFE IC= 150 rnA, VCE- 4V 50 250
hFE IC = 150mA, VCE - 4V 50 250
VCElsat) IC =-150mA,IS =-15mA - -0.8 V
VeElsat) IC - 150 rnA, IS = 15 rnA - 0.8 V
V8E IC=-150mA, VCE=-4V -1.4 V
VSE Ie - 150 rnA, VeE - 4V 1.4 V
.-
ISlb VCE =-65 V,t=0.4s -0.1 - A ISlb VCE = 65V, t- 0.4 s 0.077 - A
For characterIStics curves and test conditions. refer to published "
For Characteristics curves and test conditions, refer to pubhshed
data for prototype 2N4036 data for prototype 2N2102
Type RCA lA09 Type RCA lA 10

Package: JEDEC TO·39 Package: JEDEC TO·39
Construction: Silicon n-p-o, epitaxial Construction: Silicon p-n-p
ELECTRICAL CHARACTERISTICS, At Case Temperature ITcl =
ELECTRICAL CHARACTERISTICS, At Case Temperature ITCl =
2f1JC Unless Otherwise Specified 2SOC Unless Otherw;se Specified
LIMITS
CHARACTERISTIC TEST CONDIlIONS UNITS LIMITS
MIN. MAX. CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX.
ICEO VCE = 90 V. IS = 0 - 10 ~A
ICEO VCE = -120 V,IS = 0 -10
IESO. VES = 6 V, 'C = 0 - 100 ~A

IESO VES=-6V,IC=0 -100
VCEO Ie" 10 mA,le = 0 175 - V

VCEO IC=-10mA,IB=0 -175 V
-
'T Ic = 10 rnA, VCE = 10 V 15 MHz
'T le= -10mA, VCE=-lO V 15 MHz
hFE IC = 10 rnA, VCE = 10 V 20 100 hFE IC = -10 rnA, VCE = -10 V 40 250
VCElsat) Ie'" 50 rnA. Ie '" 4 rnA - 0.5 V VCElsat) 'C = -10 mA,la '" -1 rnA -2 V
VSE IC = 10 rnA. VCE = 10 V - 0.9 V VSE IC = -10 rnA, VeE = -10 V -0.8 V
ISlb VeE = 150V,t = 1 5 0.065 - A ISIb Vce=-l50V,t=ls -0.04 A
For characteristIcs ... urves and test conditions. refer 10 published data for prototype 2N3439 For characteristiCS curves and test conditions, refer to published data for prototype 2N541to
476 __________________________________________ ~-------------------------

POWER TRANSISTORS
RCA1 A01-RCA1 A06, RCA1A09-RCA1A11
Type RCA1A11 Type RCA1A15
Package: JEDEC TO-39 Package: JEDEC TO-39
Construction: Silicon n-p-n, epitaxial Construction: Silicon n-p-n, epitaxial
ELECTRICAL CHARACTERISTICS, At Case Te;nperature (T cJ '" ELECTRICAL CHARACTERISTICS, Ar Case Temperature (TC) 0:
2!PC Unless Otherwise Specified 25"C Unless Orherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS MIN_ MAX_
MIN. MAX.
VCEo90V.IB=0 - 10 ~A
'CEO I IcEO VeE ° 90 V - 10 ~A
'EBO VEB = 6 V.le = 0 - 100 "A lEBO VEB=5V,IC=0 - 1 rnA

I
VCEO Ie'" lOrnA, '8 =0 175 - V VCEO Ie = 10 mA, 18 = a 100 - V

fT VeE 10V, Ie lamA 15 MH,
fT 'C=10mA,VCE=lOV 15 - MH, hFF Ir. 10 rnA, Vr.F 10V 20 100
VCE(sat) IC = 10 mA, 18 = 1 rnA - 1 V
hFE IC=lmA.VCE==10V 40 250 10 rnA, VCE IOV 1 V
VBE I Ie
IC=lmA,VCE=10V 0.5 0.7 V

VBE
'Slb VCE = 50 V, t = 0.4 s 0.2 - A
For characteristiCS curves and test conditions, refer to published data for prototype 2N3439
For characteristics curves and test condition'i, refer to published data for
prototype 2N3440
Type RCA 1A 16 Type RCA1A18

Package: JEDEC TO-39 Package: JEDEC TO-39
Construction: Silicon p-n-p, epitaxial Construction: Silicon n-p-n, planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = ELECTRICAL CHARACTERISTICS, Ar Case Temperature (TC) =
25'C Unless Otherwise Specified 2!JC Unless Orherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDITIONS UNITS
MIN_ MAX_ MIN. MAX.
!
ICEO VCE ° -90 V - -10 "A leEO VCE ° 5 V, 'B = 0 - 10 ~A
i
lEBO VEB ° -5 V. Ie ° 0 - -I rnA lEBO VEB ° 4 V. IC = 0 - 1 rnA
VeEO Ic=-10mA,ls=O -100 - V VeEO le= 10mA,IB=0 10 - V

tr VeE - 10V, le- lOrnA 15 MH, tr , Ie - 50 rnA, VeE - 4 V 120 MH,
hFE Ie - lOrnA, VeE - -10V 40 250 hFE Ir. - 10 rnA Vr.F - 4 V 40 250
VCElsatl Ie - lOmA,ls 1 rnA 1 V VC,;:(sat) , Ie = 10 rnA, 16 - 0.5 mA - 1 V
VBE Ie lOrnA, VeE- 10V I V VBE , Ie lOrnA, VeE 4V 0.78 V
, For characterIStICS curves and test condItIons, refer to published
'Slb VeE =:: -SOY. t= 0.45 -0.2 - A data for prototype 2N2102
For characteristics curves and test conditions, refer to published data
for prototype 2N 5416
Type RCA1A19
Construction: Silicon p-n-p. epitaxial planar
ELECTRICAL CHARACTERISTICS, Ar Case Temperarure (TC) =
2ft C Unless Otherwise Specified
LIMITS
MIN. MAX.
- -10 ~A
'eEO , VCE ° -5 V, 18 "0
IE80_~ VEBo-4V,leo O - -1 rnA
VeEO Ie = -10 mA, IS = 0 -10 - V

fT IC SOmA, VeE 4V 60 MH,
hFE Ie lOrnA, VCE 4V 40 250
VCE(sat) Ie 10 rnA, 18 a.SmA I V
V8E Ie 10 rnA. VCE 4V -0.78 V
For charactenstlcs curves and test conditions, refer to published

data for prototype 2N4036
477
POWER TRANSISTORS
RCA1B01
Silicon Transistor for 70-Watt c
Quasi-Complementary-S ymmetry
Audio Amplifiers with Hometaxial-Base
Output Transistors
RCA 1801 is an n-p-n hometaxial·base silicon transistor RCA lBOl in conjunction with seven TO-39 transistors,
'Q)
in a JEDEC TO·3 package. This device is particularly suitable eleven diodes, and an 84-volt split power supply. The amplifier JEDECTO-3
for audio-output use, and can be driven by either the output is directly coupled to an a-ohm speaker. This amplifier
RCA lA03 n-p-n or RCA lA04 p-n-p transistor. is most useful for instrumentation applications where rugged-
ness and raw power are essential.
The 70-watt amplifier shown in Fig. 4 uses the
RCA1B01
COLLECTOA-TO-BASE VOLTAGE. VCBO 95 V
COLLECTOR·lO·EMITTER VOLTAGE:
With external base-to-emitter resistance (RBEI '" lOOn .. VCER 95 V
EMITTER-TO-BASE VOLTAGE. .- .....• VEBO V
COLLECTOR CURRENT. IC 15 A
BASE CURRENT 18 A
TRANSISTOR DISSIPATION: 0 PT
At case temperatures up to 25 0 C 115 W
At case temperatures above 25 C Derate linearly to 200°C
TEMPERATURE RANGE:
Storage & Operating (Junction) . -65 to:2oo °c
PIN TEMPERATURE lOuring Soldering):
At distances ~ 1'32 in. (O.8 mm) from case for lOs max 230 °c
Type RCIClBOl
Package: JEDEC TO·3
Construction: Silicon n-p-n, hometaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel ==

25'" e Unless Otherwise Specified
LIMITS
CHARACTERISTIC TEST CONOITIONS UNITS
MIN. MAX.
ICER VCE = 85 V, RBE = 1001l - 0.5 rnA
lEBO VEB=4V,IC=0 - 1 rnA
VCER IC = 0.2A, RBE = lOOIl 95 - V

IT VCE - 4 V, IC - 1 A 0.8 MHz
hFE IC - 4 A. VCE - 4 V 20 70
VCEtsat) IC - 4 A, 18 - 0.4 A 1 V
VBE IC 4 A. VCE ··4 V 1.4 V
ISlb Vce=60V,t=ls 1.95 - A

6 8 10 ,
For characteristiCs curves and test conditions, refer to pubhshed
NuMB£R OF THERMAL CYCLES
data for prototype 2N3055 (Hometaxial).
9O"C TtlaUoI4L
CUTour
111~ Fig. 2 - Therma/-cycling ratings for RCA 1801.
",~"all
T
'-"'~~BLOW
IOO~ CASE TEMPERATURE ITc j.25'C

- _ .. _, -1 • j ~-
I C~I~VHE~N~~~~S~EI~~~~T:~R~ITNUERAERILY j POWER.!-
I ! ! I I M~LTlIPLEIRI
?
'
Ic NAX.(CONTINUOUSI
!: I
:.
PULSE OPERATION
,
301'1
1: 1)
~;: 10+--+--
"
,
NOTES: <00
1. T: Signal 56-4-, Signal Transformer Co., . Resistors are 1/2-watt unless otherwise 3. Capacitances are mlJ.F unless otherwise specified. COLLECTOR-to-EMITTER VOLTAGE (VCEI-V
1 Junius St., Brooklyn, N.Y. 11212 specified; values are in ohms. 4. Non-inductive resistors. - Or equivalent.
Fig. 1 - lO·Watt amplifier circuit featuring quasi-complementary·svmmetry output employing Fig. 3 - Maximum operating areas for RCA 1BDl.
478 __________________________________________________________________
hometaxial-base output transistors. ___
POWER TRANSISTORS
RCA1B04, RCA1B05, RCA1B09

Silicon Transistors for 100-,120-, 200-, and TERMINAL DESIGNATIONS
300-W Quasi- Complementary-Symmetry Audio

Amplifiers with Parallel Output Transistors
JEDECT0-3
The RCA1B04, RCA1B05, and RCA1B09 load-line limiters (for overload protection). (See dlmenllonal outline "A".)
are silicon n-p-n pi-nu transistors in a JEDEC and predrivers, may be used to develop
TO-3 package_ They are especially suitable several hundred watts of audio output power
for applications in audio-amplifier circuits, in quasi-complementary-symmetry audio-am-
in which they may be used as either driver plifier configurations that employ parallel
or output un it_ output transistors. Circuit examples,
These devices, together with a variety of data are shown for 100-, 120-, 200-, and I ••
other transistors that serve as input devices,
VBE amplifiers for biasing, current sources,
300-W amplifiers.
..
I
,
;t-
z
0
. I" I"-
CASE-TEMPERATURE
~ I"- CHANGE (lIoTC )- 50·C
."
~
1\ I"
RCA1B04
RCA1B05
RCA1B09
~
~
'J--
J-- 1\ 1\
,
VCBO-
VCEO-
VCER RBE = 100 n
225
200
225
275
250
275
V
V
V
I.
I.'
, 19l1TIr' ~
468
10 4
2
C
10 5
..
, 'I" ,I.'
VEBO- 5 V
Fig. 1 -' Therma/-cycling ratings for RCA 1B04
IC - A
and RCA 1BaS.
lB· 2 A
PT
At TC';;; 25°C 150 W
0 I ••
At TC> 25°C o.r•• IInHrly. to 200 C
T stg , TJ • -£5 to 200 °c
TL
At distance;;' 1/32 in. (0.8 mmJ
from seating plane for 105 max. 230 °c
Fig. 2 - Thermal-cycling rating chart for RCA 1B09.
I.,
· CASE TEMPERATURE ITe ).25-C
, 1 1 1
I.
, r)MAX. !coLLlous,
··, r{-'.,
,-!,o
1 1 N::.~
I ,
·
.,·, , .. '''I, ""!'T;., t , . .,
1 SIb-LIMITED
I I-I
I•• I •• 10 100
COLLECTOR'lO-EMITTER VOLTAGE (VeEI-V COLLECTOR-lO-EMITTER VOLTAGE IVeEI-V COLLECTOR-TO-EMITTER VOLTAGE (VCE1-V
Fig. 3 - Maximum operating areas for RCA 1B04. Fig. 4 - Maximum operating areas for RCA 1BaS. Fig. 5 - Maximum operating areas for RCA 1B09.
________________________________________________---------------------479
POWER TRANSISTORS
RCA1B04, RCA1B05,RCA1B09
ELECTRICAL'CHARACTERISTlCS, At Case Temperature (TC) = 2!PC
CHARAC- LIMITS
TERISTIC TEST CONDITioNS RCA1B04A RCA1B06* RCA1B09"* UNiTS
Min_ Max_ Min_ Max_ Min_ Max_
ICER
VCE = 120 V, RBE = 100 n - 1 - - - -
mA
VCE = 200 V, RBE = 100 n - - - 1 - 1
lEBO VEB = 5 V, IC = 0 - 1 - 1 - 1 mA
VCEO IC = 0_2 A, IB = 0 200 - 250 - 250 - V
VCER IC = 0_2 A, RBE = 100 n 225 - 275 - 275 - V
for
IC = 0.2 A, VCE = 10 V 5 - 5 - - - MHz
IC = 1 A, VCE = 15 V - - - - 5 -
hFE IC = 2 A, VCE = 5 V 15 75 15 75 40 -
VCE/sat)
IC = 2 A,IB = 0.255 A - 2 - 2 - - V
IC = 2 A, IB = 0.2 A - - - - - 1
VBE IC = 2 A, VCE = 5 V 0.75 1.75 0.75 1.75 - 1 V
VCE = 120 V, t = 1 s 1.25 - - - - -
ISlb VCE = 140 V, t = 1 s - - 1.07 - - - A
VCE=80V,t=ls - - - - 1.875 -
... For characteristics curves and test conditions. refer to published data for prototype 2N5239
* For characteristics curves and test conditons, refer to published data for prototype 2N5240
** For characteristics curves and test conditions, refer to published dat~ for prototype 2N6510
100-W Amplifier
to provide excellent high-power performance
The loo-W amplifier shown in Figs. 6 and 7 into an 8-n load. With the exception of the
uses two RCA 1B09 transistors as drivers and· RCA-CA3100 Linear Integrated Circuit for
four RCA 1B05 trari'sistors as parallel units front end, this amplifier is entirely push-pull
in the amplifier output stages, and operates for improved high-frequency distortion and
on a l04-V split power supply. slew rate. Additional circuit features include
This 100-Wamplifier [DC-Coupled: (Fig.61 or new thermal overload protection and instant
ACCoupled (Fig.71J is conservatively designed turn-on with no undesirable transients.
'11'
O.47p.F
NOTE: COMMON HEAT SINK -251N 2 MIN. 92CL-28993
Fig. 6 - 10o-W dc-coup/ed audio amplifier circuit featuring

parafle/output transistors.
ao __________________________________________________________________
POWER TRANSISTORS
RCA1B04,RCA1B05, RCA1B09
l.aK
2W
III
tN4744
0.47 jJ.F
~~-4------NO~TE-.-CO~MM-ON-H-EA-T-SI-NK--2-5-IN~2M-'N-.----------------~
':I2CL.-28992
OUTPUT HEAT SINK - ,oCIW PER OUTPUT TRANSISTOR SET IDLING CURRENT FOR 150 - 200 mA THROUGH 2·A FUSE.
NOTES: 4. K-1 Relay, single-pole, single-throw, normally

1. All resistors 1/2 W, 5% carbon unless specified. closed, with 24 V, 3 rnA coil.
2. All capacitances in IJ.F unless specified. 5. TSS1 - 70 D C thermal cutout, Elmwood Sensor
3. All resistors are non-inductive. Part No. 3450-157-37. or equivalent.
Fig. 7 - 100-Wac-coup/ed audio amplifier circuit featuring parallel output transistors.
sw
l20V
60 H,
NOTE:
Power Transformer: Signal 80-8
(Signal Transformer Co .• 1 Junius
St., Brooklyn, N.Y. 11212), or
equivalent.
-57V +!57V
N, L. N. L
Fig. 8 - Power supply for 100-Waudio amplifiers shown in Figs. 6 and 7.
120-W Amplifier This 120-W amplifier is especially designed

for top-of-the line quadrasonic use in ap-
The 120-W amplifier shown in Fig. 9 uses plications requiring 112 kW of quadrasonic
four RCA 1804 transistors as parallel units sound with excellent tonal quality. The
in the amplifier output stages, and oper- amplifier output is directly coupled to an
ates on a 130-V split power supply. 8-.11 speaker.
________________________________________________________________________ 481
POWER TRANSISTORS
22.
IW
Oil
ISO
I
10 W 22
2W
012
200 of
MOUNT CLOSE
L_-J~~_ _-J~~_ _T!.:0::.-T"R~'~NS~IS~T~0::R_ _I---I_ _"""_ _"""'~N6C V
92CM- 22026R:S
NOTES:
1. 01-08 - lN5391; 09,010 - lN914B; 0", and ZnO thermal compound (Dow Corning
No.340, or equivalent) with T A = 4SoC max.
012 -lN5393
2. Resistors are 1/2 W ± 10% unless otherwise 6. Mount on heat sink, Wakefield No. 209-AB. or
specified; values are in ohms equivalent. (Alternatively. this type may be
3. Capacitances are in /1F unless otherwise speci- obtained with a factory-attached integral heat
fied_ sink).
4. Non-inductive resistors 7_ Attach heatsink cap (Wakefield No_260-6SH5E,
5. Provide approx. 1o C/W heat sinking per output or equivalent) on device and mount on same
device based on mounting with mica washer heat sink with output transistor.
Fig_ 9 - 12D-Waudio-amplifier circuit featuring parallel output transistors_
sw
120 V NOTES:
60 H,
1. 93°C thermal cutout (attached to heat sink
for output transistors (Elmwood Sensor part
No_ 2455-88-41, or equivalent.
THERMA.L 2. Power transformer: Signal 88-6, Signal Trans-
CUTOUT
NOTE I former Co., 1 Junius St., Brooklyn, N,V. 11212,
or equivalent.
Use 125-V primary tap.
Fig_ 10 - Power supply for 120-Waudio amplifier circuit shown in Fif!- 9_
200-W Amplifier
The 200-W amplifier shown in Fi9_ 11 This 200-W amplifier is especially designed
uses eight RCA 1 B05 transistors, . two as to feature ruggedness in combination with
drivers and six as parallel units in the ampli- high power output and excellent high fidelity
fier output stages, and operates on a 160-V performance_ The amplifier output is di-
split power supply_ rectly coupled to an B-n
speaker_
482 _____________________________________________________________________
POWER TRANSISTORS
92CM-2204IR!I
NOTES: put device based on mounting with mica washer

and ZnO thermal compound (Dow Corning
1. 01-08 - 1N5391; 09, 010 -1N5316; 011,
012 - 1 N5393_ No. 340, or equivalent) with T A = 45°C max.
2. Resistors are 1/2W ± 10% unless otherwise 6. Mount on heat sink, Wakefield No. 209-AB,
or equivalent. (Alternately. this type may be
specified, values are in ohms.
obtained with a factory-attached integral heat
3. Capacitances are in ,uF unless otherwise speci~ sink.)
fied.
7. Attach heat sink cap (Wakefield No. 260-
4. Non-inductive resistors. 6SHSE, or equivalent) on device and mount
5 ..... Provide approx. 1 oC/W heat sinking per out- on same heat sink with output transistor.
Fig_ 11 - 200-W audio amplifier circuit featuring paralle output transistors_
8 -A SLOW-
BLOW TYPE
120 V
60 Hz
NOTES:
1. 90 0 C thermal cutout attached to heat sink
for output transistors.
THERMAL 2. Power transformer: Signal 120-8 (Signal Tran-
CUTOUT
NOTE I former Co., 1 Junius St., Brooklyn, N.Y.
112121, or equivalent. Use 12S-V primary tap.
-80 V + 80 V
N.L N.L
92CS-22042R3
Fig_ 12 - Power supply for 200-Waudio amplifier circuit shown in Fig_ 11_
300-W Amplifier formance into either B-Q or 4-Q loads. With

The 300-W amplifier shown in Fig. 13 the exception of the RCA-CA31 00 linear inte-
uses two RCA 1 B09 transistors as drivers grated circuit for the front end, this amplifier
and sixteen RCA 1805 transistors as paraliel is entirely push-pull for improved high-fre-
units in the amplifier output stages, and oper- quency distortion and slew rate_ Additional
ates on a 172-V split power supply_ circuit features include new thermal overload
This 300-W amplifier is conservatively de- and reactive overload protection and instant
signed to provide excellent high-power per- turn-on with no undesirable transients.
________________________________________________________________________ 483
POWER TRANSISTORS

300 WATT A~M~LlBFI~ER~------------------------'R"C~A~IB~O~'--------------------------------'
RCAIB09 [8]
~
820
III
I~ I . I I I I I I I
2W lOW lOW lOW lOW lOW lOW lOW lOW -86Vdc
SA N.L.
RCAie05
[B]
* IDLE CURRENT SET FOR !50 mY ACROSS 0, I a RESISTOR
(8)
,---------+;----1
I~ I
2..... A
,.",. (+66 V)
I
I E I
NOTES:
1. All resistors 1/2 W, 5% carbon unless specified.
: ... i 2. All capacitances in microfarads unless specified.
3. All resistors are non-inductive,
4. Kl-Aelay. single-pole, single-throw. normally
I I closed, with 24-V, 3 rnA coil.
5. TSS1-70oC thermal cutout, Elmwood Sensor
I I Part No. 3450-157-37, or equivalent.
S. For dc-coupled version, delete 2,OOO-,uf capaci-
I I tor, add lD-kn potentiometer - see 100-Warn-
plifier circuit Fig.9 (a).
I I 7. Common heat sink - 25 in.2 minimum.
I 'K I
I I IN!53IS
L ___ ~ __ -=-_~J
(b)
Fig_ 13 - 300-Waudio amplifier circuit featuring parallel output transistors:

(a) basic amplifier circuit, (b) protection circuit.
'---+-----+----<>-86 V
N.l.
POWER TRANSFORMER SIGNAL 120-20
(SIGNAL TRANSFORMER CO·,JANIUS ST.,
BROOKLYN, N.Y.1I2121, OR EQUIVALENT
$1- 20-A CIRCUIT BREAKER 92CS-27Z34fi2
Fig_ 14 - Power supply for300-Waudio-amplifiercircuit

shown in Fig. 13.
484 ______________________________ ~ _____________________________________

POWER TRANSISTORS
RCA1B06
Silicon Transistor for 70-Watt TERMINAL DESIGNATIONS
Quasi-Complementary-Symmetry Audio
Amplifiers with Pi-Nu Output Transistors
RCA 1806 is an n-p-n pi-nu silicon transistor in a RCA 1 B06 output device in conjunction with
JEDEC TO-3 package. This device is especially eleven other discrete transistors, thirteen diodes,
characterized for audio-amplifier applications, and a 90-volt split power supply. The ampli-
and can be driven by either RCA 1C03 or fier output is directly coupled in an B-ohm
RCA1C04, n-p-n and p-n-p types, respectively. speaker. The high-frequency RCA 1 B06 output
The 70-watt amplifier shown in Fig. 1 uses the transistors used in the amplifier circuit produce
excellent transient response at a high power level. JEDECTO-3
MAXIMUM RATINGS, Absolute-Maximum Values: RCA1BD6
COLLECTOR-TO-BASE VOLTAGE ... _ .......... _ .••. VCBO 120
COLlECTOR-TO-EMITTER VOLTAGE: (See dimensional outline "An.)
With base open •.•. _ . . . • . . .... VCEO 100
With external base-To-emitter resistance IRBE) ~ lOOn VeER 120
EM1TTEA-TQ-BASE VOLTAGE .......•.••.. VEBO
COLLECTOR CURRENT. IC A
BASE CURRENT. I. A
TRANSISTOR DISSIPATION: 0 ",.
.: ..
At case temperatures up to 25 oC .. 150 w '00
At case temperatures above 25 C . 0
Derate linearly to 200 C
TEMPERATURE RANGE:
Storage & Operating (Junction I . -65 to 200 °c 1'-.
PIN TEMPERATURE (During Soldering): I
At distances~ 1/32 in. (0.8 mm) from case for 10 s max. 230 °c
Type RCA1B06 !\ i'--
CASE-TEMPERATURE I
Package: J E0 EC TO·3 !
~ 1\
""
CHANGE (tI.Tc )~50·C
Construction: Silicon n-p-n, epitaxial, multiple-emitter-site, pi-nu
~ l"-
ELECTRICAL CHARACTERISTICS. At Case Temperature (TC) = 2fJC
" 'r-
1\ I
I
~
Unless Otherwise Specified ,
\ I\, , "'- I
!
~
:,g,~5~~r 1\+ }
LIMITS
CHARACTERISTIC
.. ..
TEST CONDITIONS UNITS
MIN. MAX. !
'0
, 10" 10 5
,
ICER VCE = 90 V. RSE = lOOn - 1 mA
- Fig. 2 - Thermal-cycling ratings for RCA 1806.

VCEO IC = 0,2 A. IS = 0 100 V
IT IC 0.2A. VCE lOV 5 MHz
hFE IC 4A. VCE 4V 10 50
VCElsatl IC 4A, IS 0.8 A 2 V
VSE IC 4A. VCE 4V 2 V
ISlb VCE"'80V,t= 1 s 1.87 - A
For characteristics curves and test conditions, refer to published data for
prototype 2N 5840
r--1__ ~ __ ~ __________ ~ __________________ ~ ____ ~~~ ____ ~~~+45V
---------,
PROTECTION CIRCUIT
I
I
09 0.27
5. COLLECTOR - TO' EMITTER VOLTAGE I V(El-V
OUTPUT Fig. 3 - Maximum operating areas for RCA 1806.
NOTES: - 3. Resistors are 1/2-watt unless otherwise specified: values are in ohms.
1. 100 C thermal cutout attached to heat sink for output transistors 4. Capacitances are in J.1F unless otherwise specified.
(Elmwood Sensor part No. 2455-88-41.- 5. Non-inductive resiS1O~.
2. Power transformer: Signal 120-2 (parallel secondary),- Signal 6.01·0B.Dl1-1N5391
Transformer Co., 1 Junius St., Brooklyn, N.Y. 11212. 09,010,012,013·1N5393 - Or equivalent.
Fig. 1 - lO-Watt amplifier circuit featuring quasi-complementary-symmetry output Fig. 4 - Power supply for lO-watt audio-
employing pi-nu construction output transistors. amplifier shown in Fig. 3.
________________________________________________________________________ 485
POWER TRANSISTORS
RCA1C03, RCA1C04, RCA1C012, RCA1C013

Silicon Transistors for Audio-Frequency B
Linear-Amplifier Applications
~c
RCA1C03, RCA1C04, RCA1C12, and RCA1C13 are com- drivers. They may also be used in audio power amplifiers,
I
plementary silicon n-p-n and p-n-p transistors especially linear modulators, servo amplifiers, and operational amplifiers.
characterized for audio-amplifier applications. These devices. The units are supplied in the JEDEC TO-220AB version of the
singly or in pairs in complementary- or quasi-complementary- plastic VERSAWATT package. E
symmetry circuits, are particularly useful as drivers or pre- 92CS-27519
MAXIMUM AA TlNGS, Absolute-Maximum Values: RCA1C03 RCAIC04 RCA1C12 RCA1C13 BOTTOM VIEW
COLLECTOR·TO·BASE VOLTAGE. .. vCBO 120 -120 140 -140 V JEDEC TO-220AB
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE,
With base open. . .... VCEO 100 -100 120 -120 V (See dimensional outline "S")
With external base·ta·emitter resistance (Rsel = 100 Q ... VeER 120 -120 140 -140 V
EMITTER·TO·BASE VOLTAGE. . .... VEBO 5 -5 -5 V N-P-N Types P-N-P Types
CONTINUOUS COLLECTOR CURRENT. ·-4 -4 A
RCA1C03 RCA1C04
CONTINUOUS BASE CURRENT .. -2 -2 A
TRANSISTOR OISSIPATION, RCA1C12 RCA1C13
At case temperatures up.to 25°C . 40 40 40 40 W
At case temperatures above 25°C. '4--- Derate linearly to 150°C _____
TEMPERATURE RANGE,
Storage and Operating (Junction) . + _ - - - - -65.0+150----__.
PIN TEMPERATURE {DuringSofderingJ:
At distances ~ 1/32 in. (0.8 mm) from seating plane
for 10 5 max. -----------230----------__.
Type RCA lC03 Type RCA lC04

Package: J.EDEC TO-220AB Package: JEDEC TO·220AB
Construction: Silicon n-p-n, epitaxial Construction: Silicon p-n-p, epitaxial
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel = ELECTRICAL CHARACTERISTICS, At Case Temperature (TCJ::;
2ft C Unless Otherwise Specified 2ff'C Unless Otherwise Specified
--
LTMITS LTMITS
UNITS CHARACTERISTIC TEST CONDlTIONS UNITS
CHARACTERISTIC TEST CONDITIONS MIN. MAX.
MIN. MAX.
ICER VCE = 110 V, RBE = lOOn - 1 rnA ICER VCE = -110 V, RBE = lOOn - -I rnA
VEB = -5 V, Ic 0 - -I rnA
lEBO VEB = 5V,IC =0 - I rnA lEBO 0
VCEO . IC = 0.1 A, IB = 0 100 - V VCEO Ic=-O.1A,la=O -lOa - V

MHz iT IC 0.5A, VCE 4V 5 MHz
'iT IC - 0.5A, VCE - 4 V 4
, IC I A, VCE =4 V 250 hFE IC - -I A, VCE- 4V 50 250
hFE 50
V VCEI,.,) IC - lA,IB- 0.1 A I V
VCE("') IC I A,IB 0.1 A 1
VBE IC - 1 A, VCE 4V 1.5 V
VBE IC I A,VCE 4V 1.5 V
VCE = -40 V, .= 0.4, -I - A

ISlb VCE = 40 V,, = 0.4, I - A ISlb
..
..
For characherslstlcs curves and test conditions, refer to published For characteristics curves and test conditions, refer to published
data for prototyp~ 2N6293. data for protolype 2N6476.
Type RCA1C12 Type RCA1C13

Package: JEDEC TO-220AB Package: JEDEC TO·220AB
Construction: Silicon n-p-n, epitaxial Construction: Silicon p-n-p, epitaxial
ELECTRICAL CHARACTERISTICS, At Case TernE,ratur, ad = . ELECTRICAL CHARACTERISTICS, At Case Temperature fTcJ =
2!PC Unless Otherwise Specified 2fiOC Unless Otherwise Specified
LIMITS LTMITS
MIN. MAX. MIN. MAX.
ICER VCE = 90 V, RBE = 100 n - 100 IlA ICER VCE = -90 V, RBE = 100 n - -100 IlA
lEBO VEB =5 V,IC =0 - I rnA lEBO VEB = -5 V. IC = 0 - -I rnA
VCEO IC=O.IA,IB=O 120 - V VCEO IC= -0.1 A,IB =0 -120 - V
VCER IC =0.1 A, RBE = lOOn 140 - V VCER IC = -0.1 A, RBE = 100 n -140 - V
fT IC = 0.5 A, VCE = 4 V 4 - MHz fT IC - -0.5 A, VCE - -4 V 5 - MHz

I
hFE IC = I A, VCE = 2 V 40 250 hFE IC=-IA,VCE=-2V 40 250
VBE IC= I A, VCE=2V - 1.2 V VBE IC=-IA.VCE=-2V - -1.2 V
ISib 0.66
V CE '" 60 V, t '" 0.4 s - A IS/b VeE'" -60 V, t:: 0.4 s -0.66 - A
.. -
For characteristics curves and test conditions, refer to published
.- ..
For characteristics curves and test conditIOns, refer to published
data for prototype 2N6474. data for prototype 2N6476.
486
POWER TRANSISTORS
RCA1C05, RCA1C06
Silicon Transistors for 25-Watt
Full-Complementary-Symmetry r-r /c
•
Audio Amplifiers (FLA~GE1· 0 1:
I
RCA1C05 and RCA1C06 are n-p-n and p-n-p epitaxial-base
silicon power transistors, respectively. These complementary
output devices for audio applications are provided in the
JEDEC TO·nOAB plastic package.
tion with seven TO·39 discrete transistors. ten diodes, and a
52-volt split power supply_ The amplifier output is directly
coupled to an B-ohm speaker. The full-complementary·
symmetry output stage provides excellent high· frequency
1
Ln.~~...J''---_-'
BOTTOM VIEW E
-,--
92C5-27519
The 25,watt audio-amplifier circuit shown in Fig. 4 performance at moderate cost.
uses ACA1C05 and RCA1C06 as output devices in conjunc- JEDEC TO-220AB
RCA1C05 RCA1C06 (See dimensional ouiline "S",)
COLLECTOR·TQ·BASE VOLTAGE .••••. VCBO 60 -60
COLLECTOR·TO· EMITTER VOLTAGE:
With base open .•..•...•.•...•.••. VCEO 50 -50 v
With external base-to-emltter resistance (R BE ' = lOOn •••.• VCER 60 -60 v
EMITTER·TO·BASE VOLTAGE ............................. . V EBO -5 V
COLLECTOR CURRENT ••.••••
'e -7 A
BASE CURRENT ........... .
At case temperatures up to 2Soc
'.
PT
40
-3
40
A
w
"
,
Pr! MAX.I' 40 W
k< ~~
At case temperatures above 25 C Derate linearly to 150°C
'"
;\ I~ \\:\t\~.,~
..
TEMPERATURE RANGE:
Storage & Operating (Junction) ..••••.•• , ••..•• -65 to +150
PIN TEMPERATURE (During Solderingl:
'0 ,\..~
At distances ~1/32 in. (0.8 mml from case of 105 max. 230 °e f\ ~.
\ 1\ ~\"~r
41--~
\\~
Type RCA 1C05
Package: JEDEC TO·220AB
Construction: Silicon n-p·n, epitaxial base 'I-~
~
\\ .\1\ ~~o\ j---j-
ELECTRICAL CHARACTERISTICS. AtoCase Temperature (Tc' =
25 C Unless Otherwise Specified
, "1 %1 \~ \~
I e
I\~~I\\' 1\
10" 6 e (0'
NUMBER OF THERtoiAL CYCLES
LIMITS
MIN. MAX.
Fig. 1 - Therma/-cyc/ing ratings for RCA 1C05
and RCA1C06.
ICER VCE = 50V,RBE = l00f! - 1 mA
'EBO VBE=5V,IC=0 - 1 rnA
VCER lC=O.1 A,RBE = 100f! 60 - V

IT IC-O.l A, VCE -4V 4 - MHz
hFE IC-3A,VCE=4V 20 120
VCE(satl 'C-3A,IB-0.3A - 1 V
VBE 'C-3A,VCE-4V - I.S V
ISlb VCE=20V,t=O.5s 2 - A
- -
For characteristics curves and test conditions, refer to published data for prototype 2N6292
Type RCA 1C06

COLLECTOR- TO-EMITTER VOLTAGE {VCE1-V
Construction: Silicon p·n·p, epitaxial base
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc) = Fig. 2 - Maximum operating areas for RCA 1C05.
25°C Unless Otherwise Specified
...
I CHARACTERISTIC TEST CONDITIONS

LIMITS
MIN. MAX.
UNITS
ICER VCE = -SOV, RBE = 100f! - -1 mA
lEBO VEB=-SV,IC=O - -1 mA
~ -1.14
~ -I+---+---_+-+~-+--~~~
VCER IC =-0.1 A,RBE = lOOn -60 - V
'T IC=-O.1 A,VCE --4V 10 - MHz ~

~ -0.4
hFE 'C--3A,VCE--4V 20 120
VCE!sat) IC=-3A,IB=-0.3A - -1 V
VBE IC --3A, VCE - -4 V - 1.5 V
,
'5.1 10 ·35
- COLLECTOR - TO- EMITTER VOLTAGE I vCE1-v
ISlb VCE=-20V,t=0.Ss -2 A
For characteristics curves and test conditions, refer to

published data for prototype 2N6107 (File 488). Fig. 3 - Maximum operating areas for RCA 1C06.
________________________________________________________________________ 487
POWER TRANSISTORS
RCA1C05, RCA1C06
I.::
c. "
'.
'" TYPE
IN3154
0,
NOTES:
1. T: Signal 36-2-. Signal Transformer en,
1 Junius St., Brooklyn, N.Y. 11212
2. Resistors are 1/2-watt unless otherwise
3.' Capacitances are in IJF unless otherwise
specified.
4. Non-inductive resistors .
• Or equivalent.
Fig. 4 - 25-watt amplifier circuit featuring true-complementary-symmetry output with load line limiting.
488 ________________ ~ ___________________________________________________

POWER TRANSISTORS
RCA1C07, RCA1C08
Silicon Transistors for 40-Watt B
Full-Complementary-Symmetry /
Audio Amplifiers
RCA1C07 and RCA1C08 are n-pon and p-n-p epitaxial-base
silicon power transistors. respectively. especially suitable for
RCA 1C01 and RCA 1COS in conjunction with seven TO-39
transistors, ten diodes, and a 64-voltsplit power supply. The
amplifier output is directly coupled to an S.ohm speaker.
BOTTOM VIEW E
I
audio-output applications. These devices are provided in the 92C5-27519
economical JEDEC TO·220AB version of the VERSAWATT The high-frequency performance of this 40-watt amplifier
package. will provide excellent reproduction for the most critical JEDEC TO-220AB
listener.
The 4Q·watt amplifier shown in Fig. 3 uses the (See dlmenllonal oulline "S".)
RCA1C07 RCA1COa
COLLECTOR·TO·BASE·VOLTAGE.............................. VeBO 7. -7. V
With balD open •.••••••••••••••••••••••••••••••••••••••••• 65 -<;. V
With external balD-to-emitter rniuanca (RBEI ~ 100n •••••••.•.•• 7. -7. V
EMITTER·TO-BASE VOLTAGE .•••••.•• _•• _••.••.•......•••••. -<; V
COLLECTOR CURRENT •.•..••.•.•..•.••.....•. ,.••.....•.•••. .0 -.0 A
BASE CURRENT .•. " •• " .••.•..•• _ ••••••• , .••.••••••••••••. -4 A
At case temperatures up to 2SoC .•••••.•.•..••••• _•.••••.•••. 7. 7. W
Atcasetemperaturesabove251;!C .•..•.•.••...••.•••••••••.••. Derate linearly to 150°C
TEMPERATURE RANGE:
Storage &. Operating (Junction I •.•••••..•.••••...••. '.' ..••.•.. ___ -65 to 150-.. ·c
PIN TEMPERATURE (During Soldering): ____ 230 ______
At dlstances2!l/32 in. (O.B mm) from case for 10 s max .•.•..••.•.• ·c
Type RCA1C07 10'
II II 104 • 1 10,
Package: JEDEC TO·220AB NUMBER OF' THERMAL. CYCLES

nCS-la001RI
Construction: Silicon n-p-n, epitaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature (T d= Fig. 1 - Therma/-cycling ratings for
RCA 1C07 and RCA 1COB.
25°C Un/tlss Otherwise Specified
LIMITS
MIN. MAX.
ICER VCE ·65V,R BE -lOaf! - 1 mA

•
II
CASE TEMPERATURE I TC I- 25·C
I I I
lEBO VBE • 5V ,IC • a - • mA 4
VCER
IT
IC ·O.lA,RBE = loaf!
IC -1 A, VCE=4V
75
5
-
- MHz
V
1 IOz
U
IC IM~X.I cONiINU~US I
01"
hFE IC=4A,VCE-4V 20 .20 !:! • "loA
- l- I 14t/~1ioN
VCElsa.) IC=4A,IB=0.4A 1 V z i -......;.::~o •
VBE IC -4A, VCE -4V - 1.5 V
'"
a:
a:
:::l
4
3-- f--- - 1-+ 1- -- ~ ...
ISlb VeE =30V,t=O.5s 2.5 -
For characteristics curves and test conditions, refer to published data for prototype 2N6292
A U
a:
0
I-
Z
I
: I~'<,. I-- l-
'-;,- I-
'" 0.4•
Type RCA 1COS U
Package: JEDEC TO·220AB ..J I I ("0
..J
Construction: Silicon p-n·p, epitaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) =
0
U
Z
1 YCEO MAX·-65Y -
I
2!fC Unless Otherwise Specified

0.1
Z 4
I l 4 ..,.
LIMITS 17.'fIl1 Z 25
CHARACTER.STIC TEST CONDITIONS UNITS 1 100
M'N. MAX,
COLLECTOR-TO-EMITTER YOLTAGEIYCEI-Y NCS-ZIU3111
'CER VCE· -65V,RBE = .oof! -1 mA

• For p-n·p device, voltage and current
are negative.
'EBO VEB = -5V,IC·O -1 mA
VCER .C =-O.'A,RBE = l00f! -75 V
RCA 1C07 and RCA 1COB.
IT IC--l A, VCE=-4V MHz
hFE
VCECsa'}
VBE
IC = -4A, VCE =-4V
IC = -4A,IB = -O.4A
.c = -4A, VCE = -4V
20
-.
.20
-1.5
V
V
ISlb Vce=-30V,t=O.5s -2.5 A

For characteristics curves and test conditions, refer to published data for prototype
2N6107 IFH. 4881.
__________________________________________ ~-------------------------489
POWER TRANSISTORS
RCA1C07, RCA1C08
NOTES:
1. T: Sign.I88·2Iperallal secondary)-,
Slgnel Trlnsformer Co., 1 Junius St.,
Brooklyn, N.Y. 11212
2. ~eslstorl.r. 1/2-wett unlea othttrwl.
specified; values are in ohmL
3. Capacitances ara in IAf unl. . otherwl.,
tPeClfled.
4. Non-Inductiv. I'IIistort.
• Or equivalent.
Fig. 3 - 4D-Watt amplifier circuit featuring full-complementary-symmetry

output using load line limiting.
490 ________________________________________________________________________
POWER TRANSISTORS
RCA1C09
Silicon Transistor for 40-Watt
Quasi-Complementary-Symmetry Audio Amplifiers
RCA lC09 is an n-p-n, hornetaxial-base silicon transistor The 4()..watt amplifier shown in Fig. 3 uses two
packaged in the JEDEC TO·220AB (VERSAWATT) case. RCA lC09 transistors as output units in conjunction with
Two of these devices, driven in the class-B mode by the seven TO·39 transistors, 11 diodes, and a 64-volt split power
RCA1A06 and RCA1A05 silicon n-p"" and p-n-p transistors. supply. The amplifier output is directly coupled to an B-ohm TERMINAL DESIGNATIONS
can be used as output devices in audio-amplifier applications. speaker. This 4().watt amplifier features ruggedness and
economy in the mid-power range. B
/c
MAXIMUM RATINGS, Absolute-Maximum Valu..:
COLLECTOR-TO-UAs"e VOLTAGE •••••••••••••••••••••••••••••• V CDO
RCA1C09
75 V
i:
I I
,
I)
II
With bale open •••••••••••••••••• • •••••••••••••••••••••••
With external base-to·emitter resistance IABEI- 1000. ••••.••••••••
EMITTEA-TO-BASE VOLTAGE .• _ ••••••••••••••••••••••••••••
66
75
V
V
V
Lro............'--'-----'
BOTTOM VIEW E
I
COLLECTOR CURRENT .••••••••••••••••••••••••••••.•••••••• 10 A 92CS-27519
BASE CURRENT, •••••.••••••••••••••• _••••••••••••••••••••• A
TRANSISTOR DISSIPATION: JEDEC TO-220AB
At case temperatures up to 25°C ••••••••••.••••••••••••.••••• 75 W
At case temperatures above 25°C ., ••••••••..•.•••••••••.••••• Derate linearly to 150°C (S •• dlm.nllonal outlln. "S".)
TEMPERATURE RANGE:
Storage &. Operating (Junctionl •••••••••••••• , •••••.••••••••• -65 to 150 ·c
PIN TEMPERATURE lOuring Solderingl:
At distance'~1/:rl in. (0.8 mml from case for 10 ,max. • ..•••••• 230 ·c
Type RCA 1C09
Construction: Silicon n-p-n, hometaxial base
ELECTRICAL CHARACTERISTICS, At Cas. Temperature ITcI =

2~ C Unless Otherwise Specified
LIMITS
! CHARACTERISTIC TEST CONDITIONS UNITS 4 !"TINAX.I·"OW
MIN. MAX.
-
I , ~~-q;
leER VCE=65V. RBE= loon 1 rnA -
;\ I~~\~~~
..
2
!;t 10
lEBO VEB=5V,IC=0 - 1 rnA
~
E
"\ "\'\
- \ \ 1\ 1\ \ \"~r
~ .-~
VCER IC = 0.2 A, RBE = lOOn 75 V
hFE
~ IC-O.5A.VCE=4V
Ic=4A, VCE=4V
O.B
20 120
- MHz ;;;
s, ; \ \ \\\~ t'-:~o~ -f-

, ~1-~I ~<;
VCE(sat)
VBE
IC=4A.IB-0.4A
IC-4A,VCE=4V
1
1.5
V
V . ~. . \Il"el\~
, . ..
10'
ISlb VCE=40V,t=0.5s 1.87 - A
For characteristics curves and test conditions. refer to publishe~

Fig. 2 - Thermal-cycling ratings for RCA t COS.
tUn.
NOTES:
1. T: Signal8B-2lparaliel secondary'-,
Signal Transformer Co., 1 Junius S'.,
Brooklyn, N.V.11212
2. Resistors are 1/2·wal1 unless otherwise
3. Capacitances a,.inlJF unless otherwise
specified.
COLLECTOR-TO-EMtTTER VOLTAGE IVCE)-V
• Or equivalent.
Fig. r- 40-Watt amplifier circuit featuring quasi-complementary-symmetry output. Fig. 3 - Maximum operating areas for RCA tCOY.
491
POWER TRANSISTORS
RCA1C10, RCA1C11
Silicon Transistors for 12-Watt True-Complementary-
Symmetry Audio Amplifers TERMINAL DESIGNATIONS
RCA1Cl0 and ReAlel1 are n-p-n and p·n-p epitaxial-base RCA1C10 and RCA1Cl1 discrete transistors, an integrated
silicon power transistors, respectively, especially character- circuit, one diode, and a 36-volt split power supply; the c
(FLANGE)
-,-
ized for audio-output service. To enhance circuit economics, amplifier output is directly coupled to an 8·ohm speaker.
they are provided in the JEDEC TO-220AB version of the The integrated circuit-true-complementary-symmetry com-
VERSAWATT plastic package. bination provides a high-quality, low-cost amplifier.
The 12-watt audio amplifier circuit shown in Fig. 4 The RCA CA3094AT integrated circuit provides sufficient BOTTOM VIEW E
uses RCA lela and RCA lell as output devices in con- drive current for the complementary-symmetry output stage. 92:CS-2:7519
junction with three discrete transistors, two diodes, and a Tone controls, bass and treble, with functions of "boost"
single 36-volt power supply: the amplifier output is and "cut" are incorporated into the feedback loop of the JEDEC TO·220AB
capacitively coupled to an 8-ohm speaker. The choice of a amplifier, resulting in excellent signal-to-noise ratio and
true-complementary-symmetry output stage provides excel- freedom from distortion. Ratings and characteristics of type (See dimensional oulline "S".)
lent fidelity for a low-cost system. CA3094AT are given in RCA data bulletin File 598.
The 12-watt amplifier circuit shown in Fig. 5 uses
RCA1C10 RCA,e"
COLLECTOA·TO·BASE VOLTAGE ............................. VCBO 40 -40 V
COLLECTOA·TO-EMITTER VOLTAGE:
With base open .....•.....•.......•....•..•...•.•.•......• 40 -40 V
With external base·to-emil1er resistance (RBEI "lOOn •. 50 -50 V
EMITTER-TO·BASE VOLTAGE .•..•.••............•........... -5 V
COLLECTOR CURRENT .................................... . -7 A
BASE CURRENT .. , .•..........•...•...•.•... _ ..•..••.•..... -3 A
At case temperatures up to 25°C .• _ ••••.••.•• 40 40 W
At case temperatures above 25°C .•••••••.•.• _ . Derate linearly to 150°C
TEMPERATURE RANGE:
Storage & Operating (Junction) ......•.•........ ~ -65 to 150-+- °c
At distances,21/32 in. (0.8 mm) from case for 10 s max ..• _ ....... . . . . - - 230---.. °c
Type RCA lCl0 Type RCA lC 11

Package: JEDEC TO·220AB Package: JEDEC TO-220AB
Construction: Silicon n-p-n, epitaxial-base Construction: Silicon p-n·p, epitaxial base
ELECTRICAL CHARACTERISTICS. At Case Temperature ITCI = ELECTRICAL CHARACTERISTICS, At Case Temperature (TcJ =
2F'C Unless Otherwise Specified 2F'C Unless Otherwise Specified
LIMITS LIMITS
MIN. MAX. MIN. MAX.
ICER VCE = 35 V. RBE = lOOn - 10 IlA ICER VCE = -35 V. RBE = lOon - -10 ~A
lEBO VEB =6V - 1 mA lEBO VEa = -5V - -1 mA
VCEO IC=O_1 A.IB = 0 40 - V VCEO IC = -0.1 A.la =0 -40 - V
VCER IC = OJ A. RBE = lOon 50 - V VCER IC = -0.1 A. ABE = lOon -50 - V
IT VCE-4V,IC=0.5A 4 - MHz IT VCE=-4V.IC=-0.5A 10 - rIlHz
hFE IC=UA.VCE=4V 50 250 hFE IC=-1.5A. VCE = -4 V 50 250

VCElsat) IC= 1.5A.IB=0.075A - 1 V VCE!sat) IC = -1.5A.IB = -0.075 A - -1 V
VBE IC -1.5A. VCE =4V - 1.5 V VBE IC - -1.5A. VCE - -4 V - -1.5 V
ISlb VCE=20V.t=0.4s 2 - A ISlb VCE=-20V,t=0.4s -2 - A
For characteristics curves and test conditions, refer to published data for For characteristics curves and test conditions, refer to published data for
prototype 2N6292 prototype 2N6107
492 _____________________________________________________________________
POWER TRANSISTORS
RCA1C10, RCA1C11
10! Ie MAl(. (CONTINUOUSI I CASE TEMPERATURE ITCI·2~·C -I~: Ie MAx.leoNTINUQUS!
·, I "~
...(
_=("~.-
1-1-
I r-
·
'I--
··
IS/b':"Lll.tlTED -f\-t-
_~:-T-
I
.~ .
'1--- 1--- -I --
10' .. • I 10.
0.1
, . ..
5.7 10
VCEO·. .··70vl
,
40
COLLECTOR-TO-EMITTER VOLTAGE tVCE'-V
70 100
..
-5.7 -10
COLLECTOR-TO-EMITTER VOLTAGE IVCE
-)5
. ..
'-V -150 -JO -100
Fig. I - Thermal-cvcling ratings for RCA I CI 0 Fig. 2 - Maximum operating areas for RCA IC1O. Fig. 3 - Maximum operating areas for RCA ICII.
and RCAIC11.
10K
50VI
10)l:F •
iZ~all
I·A SLOW-BLOW
TYPE
+;'6 V N.L.
1.2K
NOTES:
1. T: Thordarson 23V118, Stancor TP4, Triad
F-93X. or equivalent (for Stereo
Amplifiersl. 2.7K
2. Resistors are 1/2-watt unless otherwise .INPUT
3. Capacitances are in IJF unless otherwise DI-IN3193
specified. D2- IN34
Fig. 4 - 12-watt amplifier circuit featuring complementary-symmetrv output.
,--+--r---r------- +18Y
-Iav
NOTES:
AL
1. T: Stancor No.P-8609 1120 V AC to O.
26.8 V CT@ 1 Alar equivalent
2. FOR STANDARD INPUT: Short C2;
R, - 250 K; C, = O.047IJF; Remove R2
3. FOR CERAMIC-CARTRIDGE INPUT:
A,
1.8M
C, - O.0047IJF; R, = 2.5 MQ; Remove
Jumper from C2; Leave R2.
4. D1 lN5392
5. Resistors are 1/2·watt unless otherwise
specified; values are in ohms,
6. Capacitances are in fJF unless otherwise
specified.
7. Non·inductive resistors.
Fig. 5 - 12-watt amplifier circuit featuring an integrated-circuit driver and a true-complementarv-
symmetry output stage.
________________________________________________________________________ 493
RCA1E02, RCA1E03
Silicon Transistors for Audio-Frequency Linear-Amplifier

Applications
RCA 1E02 and RCA 1E03 are silicon n-p-" and p·n·p transistors, larly useful as drivers or predrivers. They may also be used
respectively. These complementary devices are especially in audio power amplifiers. linear modulators, servo amplifiers.
characterized for 8udio-am'Jlifier applications. They may be and operational amplifiers. The units are supplied in the
used singly or as a complementary pair in complementary- JEOEC TO-66 package.
or quasi-complementary-symmetry circuits, and are particu- TERMINAL DESIGNATIONS

RCA1E02 RCA1E03
COLLECTOR-TO-BASE VOLTAGE. . VeBO 200 -200 V
COLLECTOR·TO-EMITTER VOLTAGE:
With base open VeEO 175 -175 V
With external base·to-emitter resistance (RSEI = 100 n. VeER 200 -200 V
EMITTER-TO·BASE VOLTAGE VEBO 5 -5 V
COLLECTOR CURRENT. . IC -2 A JEDEC TO-66
BASE CURRENT • • • • 'B -1 A
(See dimensional oulline "N.")
At case temperatures up to 25°C 35 35 w
At case temperatures above 2SoC Derate linearly to 20CtC
TEMPERATURE RANGE:
Storage and Operating (Junction I + - - -65 to +200--+ °c
PIN TEMPERATURE (During Solderingl:
At distances.> 1132 in. (0.8 mml from case for 10 s max. 4-230---+ °c
Type RCA 1E02 Type RCA1E03

Package: JEDEC T0-66 Paclage: JEDEC TO-66
Construction: Silicon n-p-n Construction: Silicon p-n-p
ELECTRICAL CHARACTERISTICS. At ease Temperature (Tel = ELECTRICAL CHARACTERISTICS. At ease Temperature (Tel =
2fiOc Unless Otherwise Specified 2fiOC Unl. Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDiTIONS UNITS
MIN. MAX. MIN. MAX.
'CER VCE = 120 V. RBE = 100 n - 100 pA ICER VCE = -120 V. RBE = 100 n - -100 pA
'EBO VEB=5V.IC=0 - 1 rnA 'EBO VEB = -5 V.le'O - -1 mA
VCEO 'C=O.l A.IB=O 175 - V VCEO 'C = -0.1 A.IB =0 -175 - V
VCER 'c = 0.1 A. RBE = 100 n 200 - V VCER 'c = -0.1 A. RBE' 100 n -200 - V
hFE IC = 0.3 A. VCE = 2 V 30 150 hFE ~ IC' -0.3A. VCE = -2 V 30 150
VBE IC=0.3A.VCE=2V - 1 V VeE 'C= -0.3A. VCE --2 V - -1 V
'Sib VCE =80 v. t =0.4 5 0.4 - A 'Sib VCE = -BDV. t =0.4. -0.25 - A
..
For characterlltlCS curves and test conditions, refer to published data for
For characteristics curves and test conditions, refer 10 published dala for
prolotvpa 2N6211
protolvpe 2N3583
494 _______________________________________________________________________
POWER TRANSISTORS
RCA41 0
High-Voltage, High-Power Silicon N-P-N Transistors

Features:
For Switching and Linear Applications in
• Maximum safe..,..-of-oper.tion curves
Military, Industrial, and Commercial Equipment
• Low saturation voltage: VeE(sat) • 0.8 V (....x.)
RCA·410 is an epitaxial silicon n-p-" power transistor
utilizing a multiple-ernitter-site structure. This device
employs the popular JEOEC TO-3 package.
voltage values, the RCA-410 is especially suitable for use in
inverters, deflection circuits. switching regulators. high·
voltage bridge amplifiers, ignition circuits, and other high·
I.
• High voltage rating: V CEO(SUS) • 200 V
High dissipation rating: Pr· 125 W
Featuring high breakdown-voltage ratings and low saturation- voltage switching applications.
MAXIMUM RATINGS, Absoluf~Aflt1timum V.luea-: TRANSISTOR DISSIPATION, PT:

COLLECTOR·TO·BASE At case temperatures up to 25°C
VOLTAGE. Veaa .............................................................. 200 V A:~:~e~:r~~:r~sVu~.;~.250C.......................................... 125 W
COLLECTOR·TO·EMITTER
and VCE abeve 75 V ...........~...................... Se. Fig. 2.
SUSTAINING VOLTAGE
At case temperatures above 25 C
With base open, VCEOlsusl ................................................. 200 V
and VCE above 75 V ................................ See Figs. 1 &I 2.
EMITTER·TO·BASE VOLTAGE. Veao ............................... 5 V
TEMPERATURE RANGE:
COLLECTOR CURRENT: Storage &I Operating Uunctionl ................................ -66 to +200 DC
Continuous. Ie .................................................................... 7 A JEDEC TO-3
PIN TEMPERATURE lOuring Solderingl:
P.ak ..................................................................................... 10 A
At distances> 1J:r2 in. (O.s mml
(S.. dlm.n.lonel oulllne "AU_)
BASE CURRENT IContinuousl,lB ........•..........••.....•......••.... 2 A from case f;
10 I max. .................................................. 230 DC
~
z
~a
~~~
~~i
•~ c.
~a '00
=:2
~ ffiDi
a L" "
=I§~ .0
~~i
~ ~B ..
25 50 75 100 125 1M) 175 200
CASE TEMPERATURE ITCI _·C
Fig. 1-Diuipatlon WId current detBdng curves.

..........
... COLLECT!'ii~"ITTr Vtr AGE, IVCE)- 5v 1
•
i : I'I~ t ~
~~2.5
~~ ~CAffc ~~~TURE :
n'j
60: 2
I~ z
o·
"'15 1.5
H I 45u~
~!
~~
a: II 1...- 55 • C
r\ a~
"c
3D~e:
~~ I
I I
1'-...~ ~
i
~til "
0.51--
0
0.01
. . .I . I I
0.1
II
COLLECTOR CURRENT I.tC I-A

I
.. II
.2el.l1025
to
.Fig. 3- fypical de beta charscteri,acs. - - - -
COLLECTOR·TO·EMITTER VOLTAGE IVetI., V
10 • • 100
1
;t •
COLLECTOII - TO - ·'IIITTIII VOLTMI lYeE 1-V
Me .. , ••••
I·
Fig.2-Maximum operating areas.
0.1 . I 1.5
BASE·TO·EMITTER VOLTAGE 1VeE'-V
.2U·40nJtl
Fig.4- Typical tranlfercharacre"~ri".
__________________________________________________________________ 495
RCA410
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 2SoC Unless Otherwise Specified
Test Conditions
DC
DC DC
Emitter
Characteristic Symbol Collector Current Limits Units
or Base
Voltage IV) (AI
Voltage IVI
VCE VEO VOE IC 'a Min. TVp· Max.
With base open 'CEO 200 0.25
rnA
reverse-biased & T C :: 12SoC 'CEV 200 -1.5 0.5
Emitter-Cutoff Current 'ESO 5.0 rnA
OC Forward-Current 1.QiI 3D 90
hFE
Transfer RatiO 2.5a 10
Collector-la-Emitter Sustaining
Voltage:
With base open VCEOlsusl b 0.1 200b V
(See Figs. 3 & 4.)
Base-ta-Emitter Saturation Voltage VaElsat) 1.0" 0.1 0.9 1.5 V
Collector-la-Emitter Saturation
Voltage VeE!sat) 1.0a 0.1 0.2 0.8 V
Second-Breakdown Collector Current:
(With base forward-biased) ISlbe 150 0.3 A
Pulse duration (non-repetitive) '" 1 s
Gain-Bandwidth Product IT 10 0.2 4.0 MH,
Switching Time:
Rise 0.111S11
(See Figs. 10. 12, & 13.) Is 1.0 0.35
-0.5I1S21
Storage 0.111s11 "s
'S 1.0 1.4
(See Figs. 11.12.& 13.1 -0.5I1S21
Fall 0.1 IISll
If 1.0 0.15
(See FIgs. 9, 12, & 13.) -0.511821
Thermal Resistance (Junctlon-ta·Case) ReJC 10 1.4 °C/W
a Pulsed; pulse duration :::;'350 fJ.S, duty factor'" 2%
bCAUTION: The sustaining voltage VCEO(sus) MUST NOT be measured on a curve tracer. The
sustaining voltage should be measured by means of the test circuit shown in Fig, 3.
c IS/b is defined as the current at which second breakdown occurs at a specified collector voltage
with the emitter-base junction forward-biased for transistor operation in the active region.
PULSE DuRATION ~ 20 pi
REPETITION RATE -'00 Hr
COLLECTOR -SUPPLY VOLTAGE IVCC'-17i5 v
DC BETA - Ic/18,-/01 181- -18Z"
0·' ;, 0.5 CASE TEMPERATURE CTC'-2'-C
I
!! 0.4
0.'
.
!II
e
~
~
j 0.3
0.2
oj ,
8
0.1
I 2 3 " .,
COLLECTOA-TO-EMITTER VOLTAGE !VCEI-V
6 7 , 1 2 •
COLLECTOR CURRENTIIC'-A
COLLECTOR CURRENT IICI-A ,ZCS.11Z4Z
Fig.5- Typical output characteristics. Fig. 6- Typical saturation voltage characteris"tic. Fig. 7- Typical fall ~me YS. collector current.
PULSE DuRATION 1( 20,... 1.4
REPETITION "ATE -100 Hz
I
.
Coc.LECTO"~ SUPPLY VOLTAGE !VCC'
DC IETAalc/lll-'OIIII--llz"
-'1'5 V 1.2
CASE nMPEPtATUREITc'-Zi5-C
;, 1.0
1
~. 0.8
~
0.' c: 0.2
PUlSE DUAATIOM :5 20 p.
REPETITION RATE -100 H.
=~~~I~~U:.~Y_;~~Li~-~~)/~17i5V
CASE TEMPERATURE ! TC I - 2,-t
1 , •
COLLECTOA CURRENTIICI-A
COLLECTOR CURRENT II C ' - A
Fig.S"':' Typical rise time vs. collector current.
Fig.9- Typical storage time vs. collector current.
496 __________________________________________________________________ ___
POWER TRANSISTORS
RCA411
High-Voltage, High-Power Silicon N-P-N Power Transistor

For Switching and Linear Applications in Features:
Military, Industrial, and Commercial Equipment • Maximum .....r••-ot-operdion curves
• Low saturation voltage: VeE (sat) -O.B V lmax.)
RCA-411 is an epitaxial silicon n·p-n power transistor' voltage values, the RCA-411 is especially sui~ble for use in • High voltage rating: VCEO(sUS) • 300 V
utilizing a multiple-emitter-site structure. This device inverters, deflection circuits, switching regulators, high· • High dissipation rating: PT =125 W
employs the popular JEDEC TO·3 package. voltage bridge amplifiers, i",ition circuits, and other high·
Featuring high breakdown-voltage ratings and low saturation- ,:,,»Itage switching applications.
MAXIMUM RATINGS. Ab.oIu,..",..imum V.IWI: C
BASE CURRENT IContinuoUII,IB ....................................... 2 A
'~
COLLECTOR·TO·8ASE
TRANSISTOR DISSIPATION.,:
VOLTAGE. vesO ....................................................·.·•.•••••• 300 V
At Cllse temperaturn up to 25 C
COLLECTOR·TO-EMITTER A:r;::~!:r:~:!svu~.~~.25iic.......................................... 125 W
SUSTAINING VOLTAGE:
With t».. opIn, VCEotlUl) ................................................. 300 v and VCE above 15 V .......... ~...................... See Fig. 2.
At use llIfr1)elllturn
IIbovtI 25 C
EMITTER·TO·BASE .2.
lind VCE above 75 V ................................ Set Figs. 1 nCI·I~'.
VOLTAGE. VESO •••••••••••••••·•••••••••••.•••••••••.•••••••••••.•••••••.••••. 5 V
TEMPERATURE RANGE: JEDECTO·3
COLLECTOR CURRENT: Stor. a Operllting (Junctionl .............~.............. -86 to +200 OC (See dlmenllonal outline "A".)
Continuous. Ie .................................................................... 7 A
Peek ...................................................... _............................. 10 A PIN TEMPERATURE (DurinD Soldering):
AtdistanCIII>1J32in.lo.Bmm)
fromCllllfor10.rnalC................................................ 230 OC
PULSE OPERATION"
n 50 '" 100 125 150 175 100

CASE TEMPERATURE lTcl--C
Fig.1-Dissi,.tion and currtJllt derating cu",.,.
0.01
z ....
0.1 I
COLLECTOR CURRENT tICI-A
... '0
Fig.3- 7 ypical dc beta characteristics.
CASE TEMPERATuRE ITc '-25-C
0.'
I • 6 • 4
10 100
..§
COLLECTOR - TO - EMITTER VOLTAGE (VCE) - V
92CS-11240 0.'
Fig.2-Maximum operating areas.

oj •
8
I 2 1 3 " 5 6 7
COLLECTOR-TO·EMITTER VOLTAGE IVC£I-V
Fig.4- Typic~1 output characteristics.
- - - - - - - - - - - - - - - - - - - -____________~--------------------__- -___________ 497

POWERTRANSISTORS ________________ ~ __________________________________ ~ __
RCA411
ELECTRICAL CHARACTERISTICS, Case Temperature ITC) = 25°C Unless Otherwise Specified.
Test Conditions
DC
DC DC
Emitter
Characteristic Symbol Collector Current Limits Units
o,Base
Voltage IVI IAI
Volt,ge IVI
VCE VEB VBf Min. Typ. Male.
Collector-Cutoff Current
With base open ICED 300 0.25
With base-emitter Junction
revt!rse-blased ICE V 300 15 0.25 mA
With base-emitter Junction
reverse·blased & TC 125°C 300 ·1.5 0.5
Emltler-Cutof' Current lEBO 5.0 mA
DC Forward-Current Loa 30 90
Transfer Ratio 2.5' 10
Colleclor-l0-Emlltel Sustaining
Voltage 0.1 v
With base open
Base to Emlltt.'" S.Uuratron Voltage 01 09 1.5

COllpClor·ro-Emlfler Saturation
Voltage 1 0' 01 0.2 08 v
Second· Breakdown Collector Current
JW,th bast' fOfvvard-b'dsedl 150 0.3 A
Galn·Bandwidth Product IT 10 0.2 2.5 MHz
SWitching Time
O.l11Bll
Rise I, 1.0 0.35
-0.5I1B21
O.l11Bll
Storage I, 1.0
0.511B21
1.4 "'
Fatl 0.111Bl1
If 1.0 0.15
-0.5I1R,1
Thermal Resistance (Junctlon-to·Casel A"JC 10 1.4 °C/W
Pulsed; pulse duration ~350 J.ls. duty 'actor = 2%.

ill bCAUTION The sustaining voltage VCEOlsusl MUST NOT be measured on a curve tracer.
ciS b IS defined as the current at which second breakdown occurs at a specified collector voltage
With the em.lller·base Junction forward·blased for tranSistor In the active
COLLECTOR·TO·EMITTER VOLTAGE 1Voo-S V PULSE DURATION :110/&,

REPETITION RATE "'00 Hz
COLLECTOR -SUPPLY VOLTAGE IVccl"ZOOV
DC IETA-IC/IB,"10.:tB,--IB2"
;. 0.5 CASE TEMPERATURE ITc'·U"C
f~'
:i 0 .3
~
0.2
0.1
0.5 I 1.15 I 2 3
BASE·TO·EMITTER WLTAGE 1VBE1-V COLLECTOR CUARENTIIcl-A
,2CI-II242 IICS·III41
Fig.5-.Typical transfer characteristICS. Fig.6- Typical saturation voltage characteristic. Fig. 7- Typical fall time .... collector '''""''t.
PULSE DUftATION!S 20 /&'
REPETITION RATE-IOO Hz
1.i5 COLLECTOR-SUPPLY VOLTAGEIVcCI. 100Y 1.2
DC BETA oIC/IBI"IO I IBI" -III"
CASE TEMPERATUREITCI-2S·C
;.
I
-l1.0
'II
~
0.' Pl.LSE DURATION :Ii 20 /&'

REPETITION RATE "100 HI
0.2 ~~~I~~~~~;~~L~~.~~/;200V
CASE TEMPERATURE ITc 1 .. 25"'C
I 2 3
COLLECTOR CURRENTIJ:CI"':'A COI..LECTOR CURRENT (Ie I - A
IZCI·11247 t1lZCS·1I141
Fig.8- Typical rise time vs. collector current. Fig.9- Typical storage time vs. collectorcurnmt.
498
POWER TRANSISTORS
RCA413, RCA423, RCA431

Features:
High-Voltage, High-Power • Maximum safe-area-of-operation curves
Silicon N-P-N Power Transistors • Low saturation voltage:
VCE(sat)=O.8 V (max.)
For Switching and Linear Applications in - RCA413, RCA423
Military, Industrial, and Commercial Equipment VCE(sat)=O.7 V (max.)
- RCA431
• High voltage rating: VCEO(sus)=325 V
• High dissipation rating: Pr=125 W
The RCA413, RCA423, and RCA431 are switching regulators, high-voltage bridge
epitaxial silicon n-p-n transistors utilizing a amplifiers, ignition circuits, and other high-
multiple-emitter-site structure. voltage switching applications. TERMINAL DESIGNATIONS
The transistors feature high breakdown- The RCA413, RCA423, and RCA431
voltage ratings and low saturation-voltage transistors are supplied in steel JEDEC TO-
values, making them especially suitable for 204MA hermetic packages.
c
'~
use in inverters, deflection circuits,

VC60 .................................................................................... 400 v
VCEO(SUS) ................................................................................ 325 V
JEDEC TO-204MA
VE60 ...................................................................................... 5 V
~ .......................................................................................... 7A
ICM ....................................................................................... 10 A
16 .......................................................................................... 2 A
PT
TC up to 25°C ........................................................................ 125 W
NOTE: CURRENT DERATING AT CONSTANT
TC above 25°C, derate linearly .................................................... 0.714 W;OC VOLTAGE APPLIES ONLY TO THE OlSSIPATlON- ••.
LIMITED PORTION AND THE lS/b-LlMITED .
TSlg, TJ ........................................................................... -65 to +200°C PORTION Of MAXIMUM OPERATING AREA
CURVES DO NOT DERATE THE
TL SPECIFIED VALUE FOR Ie MAX
AI distance 2: 1/32 in. (0.8 mm) from

sealing plane for 10 S max. . ......................................................... 230°C
"
CASE TEMPERATURE ITe 1 - ' C
Fig. 2 - Dissipation and current derating curves.
P¥JH
TEST
, -_ _ _ _ _ _---ci...l.-o---QVcc
HORIZONTAL
INPUT
TEKTRONIX OSCILLOSCOPE
MODEL RM-503.0R EQUIV
VEflTICAL
INPUT
CLAflE
MOOEL No HGP-2034.
OR EOUIVALENT
,",j
':1
8.5V
10
COlLECTOR- TO-EMITTER VOLTAGE (VCEI- v
92CM- 33224
Fig. 3 - Circuit used to measure sustaining

Fig. 1 - Maximum operating areas. voltage, VCEO(SUS).
______________________________________________________________________ ~499
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, Case Temperature (TC)=25·C Unless .Otherwlse
,
Specified I
~
Test Conditions limits
DC
Characleristlc
Voltage (V) Currenl RCA413 RCA423 RCA431 Units
Symbol
(A)
VCE VSE IC IS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. COLLECrOR-TO-E'-4IT TER
-v
ICEO 300 - - 0.25 - - 0.25 - - 2.5
VOL TAGE (VCE)
THE SUSTAINING VOL rAGE VeEO (sus) IS

ICEV 400 -1.5 - - 0.25 - - 0.25 - 2.5 - ACCEPTABLE WHEN THE TRACE fALLS
TO THE RIGHT ANO ABOVE POINT "A"
ICEV mA
(TC=125°C) 400 -1.5 - - 0.5 - - 0.5 - - 5
IESO -5 5 5 2
5 0.5 8 20 - 80 - - - - - - Fig. 4 - Oscilloscope display for measurement of
5 1a 15 - - 30 - 90 - - - sustaining voltage (test circuit shown
hFE in Fig. 3).
5 2.5 8 - - - 10 - - 15 - 35
5 3.5 8 - - - - - - 10 - -
VCEO(sus)b l~5 COLLEC1J~MIT~rFl V:rAGE IVCEI' 5V
(Figs. 3 & 4)
0.1 325 b - - 325 b - - 325 b - - V '0
0.5 8 0.05 - 0.8 1.5 - - - - - - ~
!~2.~
l!~ "-
1~ ~~~
VSE(sat) 1a 0.1 - - - - 0.9 1.5 - - - !CAffc ~~~~~TURE ~o
2.5 a 0.5 - - - - - - - 1.1 1.5 i~ 2 6°~5
0.5 a 0.05 - 0.15 0.8 - - - - - ~i 1.5

lfi I 4~o~
:2:
18 0.1 - - - - - - - Jil ~ ~ ~i
i~ 0.' 1 1
VCE(sat) 0.2 0.8 , 30Z;~
2.5 a 0.5 - - - - - - - 0.25 0.7
~
IS/be Pulse b. ~
"
duration (non-
repelilive)=1 s
150 0.1 - - 0.1 - - 0.1 - - A 0 ,
.; II "
0.1
,I
COLLECTOR CURRENT
.., , . r
(.I C)-A
"
10
fT 10 0.2 - 4 - - 4 - - 4 - MHz
tr Fig. 5 - Typical de beta characteristics.
0.1 for all types.
(Figs. 12. 13. 1 (lS1) - 0.35 - - 0.35 - - - -
CASE TEWPERATURE I TC I- 2'- C
16.17) 2.5 0.5 - - - - - - - 0.35 -
(lS1) 0.'
ts 0.1
(lS1)
(Figs. 14. 15, 1 -0.5 - 1.4 - - 1.4 - - - - I'S
02
(IS2) BASE cURRENT tla l - O.IA
16,17) 2.5 0.5 - - - - - - - 1.8 -

(lS1)d
If 0.1
(lSI)
r 2 3 4 ~ 6 1
(Figs. 10, 11. 1 -0.5 - 0.15 - - 0.15 - - - - COLLECTOR-TO-EMITTER VOLTAGE tVCE'-V
nCS-ltOZ6
(lS2)
Fig. 6 - Typicaf output characteristics.
16,17) 2.5 0.5 - - - - - - - 0.4 - for all types.
(lS1)d
R8JC 10 5 - - 1.4 - - 1.4 - - 1.4 °CIW
! COLLECTOR ·TO-EMITTER VOLTAGE IVc[l<S V ~
apulsed; pulse duration:5 350 I's., duly faclor = 2%.
bCAUTION: The sustaining vollage VCEO(SUS) MUST NOT be measured on a curve Iracer. The
sustaining voltage should be measured by means of the test circuit shown in Fig. 3.
CI S/ b is defined as Ihe current at which second breakdown occurs at a specified colleclor vollage
with the emitter-base junction forward-biased for transistor operation in the active region.
dl S1 = -IS2 = value shown.
I 1.5
SASE-TO-EMITTER VOLTAGE (VSE)-V
Fig. 7 - Typical transfer characteristics.

for all types.
500 ________________________________________________________________________
POWER TRANSISTORS
-25·C PULSE DURATION :S ZO jU

REPETITION RATE "100 Hz
COLLECTOR -SUPPLY VOLTAGE IVec"ZOOV
DC BETAoIC/IUI"10,IUlo-IBZ/5
't 05 CASE TEMPERATURE ITCI"Z5"C
I
~04
~ 0.3
~
02
I 2 ,
COLLECTOR CURRENTIlel-A
COLLECTOR CURRENT Ilel-A COLLECTORCURRENTIICI-A
Fig. 8 - Typical saturation voltage vs. Fig. 9 - Typical saturation voltage vs. Fig. 10 - Typical fall time vs. collector current
col/ector current for RCA413 and RCA423. col/ector current for RCA431. for RCA413 and RCA423.
PULSE DURATION:S20",s PULSE OURATIONSZO~.

PULSE CURATION:S 20~.
REPETITION RATE-tOOHz 'REPETITION RATE oIOOH,
REPETITION RATE 0100 Hz
I COLLECTOR-SUPPLY VOLTAGEIVCC"ZOOV
COLLECTOR-SUPPLY \lOLTAGEIVCc)-200V
CASE TENPERATuREITCI-25-C
I ~ COLLECTOR- SUPPLY VOLTAGE t 'ICC I 0 ZOOV :±t1::l+1:ltI1±±J .. 5 i CASE TEMPERATUREITC "Z5"C
IBI" lS2
DC BETA "IC/IUI"IO; IBI" -IB Z /5
CASE TEhlPERATUREITCI"Z5"C
IIUlo-I BZ
DC BETAlhfEJ-5 t I DC UETAtilFEl 0 5
I
~"I.O
~
2 , 4 I 2 , 2 ,
COLLECTOR CURRENT IIel-A COLLECTOR CURRENTi Ic 1- A COLLECTOR CURRENTtIcl-A
Fig. 11 - Typical fall-time VS. col/ector current Fig. 12 - Typical rise time vs. collector current
Fig. 13 - Typical rise time vs. collector
for RCA431. lor RCA413 and RCA423:
current for RCA431.
'11.0
I
~.. 0.8
>-
[: PULSE DURATION S 201'-'

REPETITION RATE-IOO Hz
>-
~~f--
lila
__+-.____---''--t__,-____TIME
COLLECTOR -SUPPLY VOLTAGE (Vee 1-200v
0.2 DC BET", >Ie/I81 _10; IB, • -IB Z /!5
CASE TEMPERATURE I Tel' 25"C
COLJ.ECTOR CURRENT tIcl-A

92C5-182'"
Fig. 14 - Typical storage time vs. col/ector

current for RCA413 and RCA423.
TRANSISTOR
UNOER
PULSE DURATION:S 20~.

REPETITION RATE -loa HI
TEST
,,:.=....___ TlME
COLLECTOR-SUPPLY VOLTAGE IVcc)- zoo V

CASE TEMPERATURE 1Tcl<25'C
IS," IS Z TURN-OFF
!I DC 8ETAlhFE'-5
1----1----' TIM.E
OJ.JTPUT WAVE FORM
·'BI A~D IBI /olEA SUR ED WITH TEKTRONIX CURRENT PROBE P6JI9 OR EQUIVALENT
Fig. 16 - Circuit used to measure switching times, Fig. 17 - Phase relationship between input and
output currents showing reference pOints
for specification of switching times.
(Test circuit shown in Fig. 16).
2: 3 4 5 6
COLLECTOR CuRRENT I 1cl- A
Fig. 15 - Typical storage time vs. col/ector

current for RCA431.
- -________________________________________________________________ 501
POWER TRANSISTORS
RCA6340, RCA6341
Features:
25·A Silicon N·P·N Power Transistors • Fast Switching Speed
• Low VCE(sat)
N-P-N Types for • Steel Hermetic TO-204MA Package
Power Supplies and Other High Voltage
Switching Applications
RCA6340 and RCA6341 silicon n-p-n parameters that are essential to the
power transistors which feature fast design of high-power switching circuits.
switching speeds, low saturation voltage,
and high safe-operating-area (SOA) The RCA6340 and RCA6341 transistors
ratings_ They are specially designed for are supplied in steel JEDEC TO-204MA
converters, inverters, pulse-width- hermetic packages.
modulated regulators and a variety of JEDEC TO-204MA
These types are similar to the 2N6340 and
power switching circuits. (See dimensional outline "Au.)
2N6341 except for the Cabo, hFE
These high-current, high-speed tran- measured at IC of O.5A, and IS1' IS2 con-
sistors are .100-per-cent tested for ditions for switching times.
RCA6340 RCA6341 100
Vcso· .................................................... . 160 180 V

7'
~m···················································· .. 140 150 V
vESO·························.························ ... . 6 V '0
~ . . . . . . . . . . : ............................................ . 25 A
ICM ...................................................... . 50 A "
Is························································ . 10 A
25 50 75 100 125 150 175 200 225 250
PT CASE TEMPERATURE (TC)--C
92CS-l"~5
TC upto 2SoC ............................................. . 200 W
Fig. 2-Dissipation and 'Slb derating curves
T C above 2SoC, derate linearly ............................... . 1.143 WPC for both types.
Tstg, TJ ................................................... . -65 to 200 °c
. ..
TL
At distance;;, 1/16 in. (1.S8mm) from
seating plane for 10s max ................................... . 235 °c
I
~ ,
~
i:i
100
• ~~
;
o~
~"'4"/I~
"~
~"<
C •
,~
;; "J
~
4
1\
\~
(,J~"O'l'
~ ,
1
..
I 'f, ~
\ 'tJ1
.. , "". .. ~
NUhlBDI OF THERMAL CYCLES
Fig. 3-Thermal-cycling chart for both types.
10 001
Z468 2468 2468 246B
COLLECTOR-TO- EM ITTER VOLTAGE (VeE )-V 0.001 0.01 0.1 I 10
92CM-321S0 PULSE WIDTH Upl - . 92CS-~03IJ7
Fig. I-Maximum operating areas for both Fig. 4- Typical thermal-response

types. characteristic for both types.
502
POWER TRANSISTORS
R CA6340, R CA6341
COLLECTOR-lO-EMITTER VOL. TAGE
ELECTRICAL CHARACTERISTICS, at Case Temperature TC = 25°C Unless Otherwise 400 (VeE)-2V
Specified I I
2
le)oIL.c
.,
TEST CONDITIONS LIMITS CArE TEMP:LTURE
100
'q
RCA6340 RCA6341
TERISTIC V de A de UNITS 'E' ,
.L ""~I'
25'
VCE VBE Ic IB Min. Max. Min. Max.

,
'I r--
150 -1.5 - 10 - -
ICEV
TC= 1500C
150
140
-1.5
-1.5
-
-
-
1
-
- -
10 Il A
mA
.,
10
150 -1.5 - - - 1 0.5 10 40

COLLECTOR CURRENT {Iel-A
16QC - 10 - -
ICBO l80c - - - 10
Il A Fig. 5- Typical de beta characteristics for
both types.
lEBO -6 0 - 100 - 100
VCEO(sus)b 0.05 a 0 140 - 150 - V
2 0.5 a 30 - 30 - ~ 2.4
Is"Ie /IO II
~
~
hFE 2 loa 30 120 30 120 z
0
n
2 25 a 12 - 12 -
~
CASE TEMPERATURE (Tcl--40-cl
2 lOa - 1.8 - 1.8 I

VBE ~I
VBE(sat)
loa 1 - 1.8 - 1.8
V ~r rr
25 a 2.5 - 2.5 - 2.5 !::'W
~ u
~2:..
VCE(sat)
lOa 1 - 1 - 1 7 O.B
[725'C
~
25 a 2.5 - 1.8 - 1.8 0

/
.-
~
u 0.4
'~ "
125°C
ISlb 18 11.1 1 - 1 s
8
lhfe l 10 100
f= 5 MHz
10 1 8 - 8 - COLLECTOR CURRENT IIc )-A 92CS-31453
Fig. 6- Typical collector-to·emitter saturation
fT 10 1 40 - 40 - MHz voltage characteristics lor both types.
Cobo 1.2~~
f=O.l MHz
10c - 600 - 600 pF
~ ?
t,d -6 10 0.5 - 0.3 - 0.3 g I
4)~
tsd -6 10 0.5e - 1 - 1 Ils
Q>
~J:. O.B ~~SE.\E."'E.~
P.\u~E.\\c/ "/..~
___ V.;<
~
t~·
ROJC 10
-6 10
5
0.5e -
-
0.25
0.875
-
-
0.25
0.875 °CIW
~~
~l 0.6
~
-----...-
I--
:;:7
./
;;
a Pulsed: pulse duration = 300 }lS, duty factor::::;;;; 2%. Vee value.
~ 0.4-
~
C
b CAUTION: The sustaining voltage VCEO(SUS) MUST NOT

be measured on a curve tracer.
d VCC = 80V. tp = ,OMS
e IB, =-IB2
0.2
4 6 8 I Z
., 8 10 2 . 60
Fig. 7- Typical base·to·emitter saturation

voltage characteristic for both types.
CASE TEMPERATURE (Tel ~ 2:5°C
0.1
~ 20 0.'
~ 15
0.5
~
j to 02
8
~ASE CURRENT (lSI' 0.1
o
o 10 12 14 16 20 5 10 15 2.0 25 30
COLLECTOR CURRENT (IC1- A 92CS-314~5 COLLECTOR-TO -EMITTER VOLTAGE (VeE) - v nCS-31456 COLLECTOR CURRENT( IC)- A 92CS- 32145
Fig. 8- Typical smal/·signal forward·current Fig. 9- Typical output characteristics for both Fig. 10- Typical saturated-switching-time
transfer ratio characteristic for both types. characteristics as a function of co/-
types (f = 5 MHz). lector current for both typ.es.
_____________________________________________________________________ 503
RCA6340, RCA6341
~ 10: ~ CASE TE-MP"ERATURE (Tel = 125'"C
• Ia=le /lO
I81-182 Vec- SOV
-- 4 \..
'"~ 'r---r-~~~r--+---t---t--~~
~
~ ",
~ .~=t==~~~==~=4==~ lOA
IN4933
I81_
-la2
~ 6~--r--;r-~~~---t---t---r~ 0"
I 4
EQUIV.
-VSB
-5V
~ '~ __r---r-~~-+---t---t---r~
~
a: OJ Fig. 13-Switching-time test circuit.
10 15 20 25 30 35 4 6 8160
400
COLLECTOR CURRENT (lei - A 92CS-31460
COLL.ECTOR -TO -BASE VOLTAGE (Veal-V
OR
Fig. II-Typical saturated-switching-time EMITTER-lO-BASE VOLTAGE (VEal-V 92CS-314'9
characteristics at TC = 12!f'C as a Fig. 12-Typical common-base input (Cibo) or

function of col/ector current for both output (Cabo) capacitance
types. characteristic for both types.
~iH,-.------I;'
CIIa:
---'--l--7
="-"'=""'"
- I
I
I
I
I
I
I
I
I
~!2!
,,~
:I
~~~_ _t-'-1
Fig. 14-Phase relationship between input cur-

rent and output current showing
reference points for specification of
switching times.
504 ____~--------------------------------------------------------
POWER TRANSISTORS
RCA8766 Series
10-Ampere N-P-N Monolithic Darlington Power Transistors
350, 400, 450 Volts, 150 Watts

Gain of 100 at 4, 6A
Features:
• Operates from IC without predriver
The RCA-8766 Series· are monolithic n-p-n The devices in the series differ primarily in
silicon Darlington transistors designed for voltage ratings and in the current at which
the dc gain is specified. • High reverse second-breakdown capability
automotive electronic power app::cations_
The pi-nu construction of these devices pro- The RCA-8766 Series are supplied in the
vides good forward and reverse second- JEDEC TO-3 hermetic steel package.
breakdown capability; their high gain makes Applications:
• Formerly RCA Dev. Nos. TA8766 Series.
it possible for them to be driven directly • Power switching
from integrated circuits .. - • Solenoid drivers
• Automotive Ignition
RCA8766 RCA8766B RCA8766D

RCA8766A RCA8766C RCA8766E
V CBO ' 350 400 450 V
V CER ('':'')
RBE = 50 n 350 400 450 V
c
'0
VCEO('u,) 350 400 450 V
V EBO ' 5 V
IC' 10 10 10 A
ICM 15 15 15 A
lB' 1 A
PT
T C <25°C 15 9 150 150 W JEDEC TO-3
TC >25°C - - - - derate linearly 1 - - - °C/W
0
. T stg • TJ -65 to+175 C
TL
At djstances~1/8 in. (3.17 mm) from case
for 10 s max. 235 °c
'00 ,
L04 COLLECTOR-lO-EMITTER VOLTAGE ("CEJ"3V
. - 02 COLLECTOR CURRENT (Icl-50 Ie
,
-a ,
~ r-- --......
10:
~ :h.\~'Joc.
2/ - \ 0.'
~ '0':r--- iT'"'- ~\
'/..f:J0c.
.0
,,0
I
g
, . / ./
, L
3 2 'I. 6 e 10 4 2 6 elO~ 2 6 610 6
10
, , , , 1
, , , , '0 0.5 I 1,5
COLLECTOR CURRENT (Icl-A BASE-TO-EMITTER VOLTAGE (VSE1-V
Fig. 1 - Thermal-cycling rating chart for all types. Fig. 2 - Typical DC beta characteristics for all types. Fig. 3 - Tvpical input characteristics for all types.
___________________________________________________________________________ 505
POWER TRANSISTORS
RCA8766 Series
ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) 2fJC unless otherwise specified

VOLTAGE CURRENT RCA8766 RCA87668 RCA8766D
Vde A de RCA8766A RCA8766C RCAS766E
VCE IC 18 Min. Max. Min. Max. Min. Max.
ICER 350 - 1 - - - -
R BE =50Q 400 - - - 1 - -
450 - - - - - 1 rnA
T C = 150°C 350 - 10 - - - -
400 - - - 10 - -
450 - - - - - 10
lEBO
VBE = -5 V 0 - 60 - 60 - 60 rnA
VCEO(susl 0.2a 0 350 - 400 - 450 - V
hFE
RCA8766 3 6a 100 - - - - -
RCA8766A 3 4a 100 - - - - -
RCA8766B 3 6a - - 100 - - -
RCA8766C 3 4a - - 100 - - -
RCA8766D 3 6a - - - - 100 -
RCA8766E 3 4a - - - - 100 -
VBE
RCA8766 3 6a - 2.5 - - - -
RCA8766A 3 4a - 2.5 - - - -
RCA8766B 3 6a - - - 2.5 - - V
RCA8766C 3 4a - - -- 2.5 - -
RCA8766D 3 6a - - - - - 2.5
RCA8766E 3 4a - - - - - 2.5
VCE(satl
RCA8766 6a 0.2a - 1.5 - - -
RCA8766A 4 a 0.133a - 1.5 - - -
RCAB766B 6a 0.2a - - - 1.5 -
RCA8766C 4a 0.133 a - - - 1.5 - - V
RCA8766D 6a 0.2a - - - - - 1.5
RCA8766E 4a 0.133 a - - - - - 1.5
All Types 8a O.sa - 2.5 - 2.5 - 2.5
VF 7a - 2 - 2 - 2 V
Ihfel
f = 1 MHz 5 1 10 - 10 - 10 -
ISlb
t = 1 s, nonrep. 30 5 - 5 - 5 - A
ROJC - 1 - 1 - 1 °C/W
a Pulsed: Pulse duration = 300 J.lS, duty factor = 1.8%.
506-----------------------------------------------------------------------
POWER TRANSISTORS
RCA8766 Series
....
.15
.
:::>
u
~
'"
...J
...J
8
6 B
10 100
Fig. 4 - Maximum operating areas for al/ types.
o,~ I
BASE-lO-EMITTER VOLTAGE (VSE)-V COLLECTOR-lO-EMITTER VOLTAGE (VCE)-V COLLECTOR-lO-EMITTER VOLTAGE (V:::E)-V
'2CS·<8~4~
Fig. 5 - Typical transfer characteristics for Fig. 6 - Tvpical output characteristics for Fig. 7 - Typical output characteristics for
all types. all types. all types.
_______________________________________________________________________ 507
POWER TRANSISTORS
RCA9166A, RCA9166B, MJ15022,MJ15024

Features:
Silicon N-P-N Epitaxial-Base • High dissipation capability
High-Power Transistors • High voltage
Rugged Devices, Broadly Applicable Applications:
For Industrial and Commercial Use • High- fidelity amplifiers
• Linear/power amplifiers
The RCA9166A", RCA9166B", MJ15022. operating-area (SOA) ratings. and the
and MJ15024 are ballasted epitaxial-base currents at which the parameters are
silicon n-p-n transistors featuring high gain controlled.
at high current and high voltage. Theydiffer All these types are supplied in the JEDEC
from each other in voltage ratings. safe- TO-204MA steel hermetic package. TERMINAL DESIGNATIONS
"Formerly RCA Dev. Type Nos. TA9166A

and TA9166B. respectively.
RCA9166A RCA9166B MJ15024 MJ15022

VCBO.... ...... .... .... ............ ... 400 350 v JEDEC TO-204MA
VCER(SUS) RBE=100 n . .... ..... . ... .. 275 225 275 225 v
VCEO(sus) ............................ 250 200 250 200 v (See dimensional outline "A ".)
VEBO ................................. 5 ------- V
IC ..................................... _ _ _ _ _ _ _ 16 - - - - - - - A
ICM................................... 30 - - - - - - - A
lB.... ...... .... .... ..... .... .......... 5 A
PT
250 _ _ _ _ __
AtTC$25'C ...................... . W
_ _ _ _ _ _ _ 1.43 _ _ _ _ __ l;:l~
At T C > 25' C Derate linearly .... . W/'C ~~
"0
Tstg. TJ .............................. . _ _ _ _ _ _ -65 to 200 - - - - - - 'c ~>
TL ~ 12~
At distance 2 1/32 in. (0.8 mm) from 13100

230 _ _ _ _ _ __
seating plane for 10 s max. 'c @
~ 75
~
~
~
'"
~"
25 50 75 100 125 150 175 200
CASE TEMPERATURE (TC)-~C
H
()
>-
~
<5
..,
1000, COLLECTOR TO EMITTER VOLTAGE CVCE)-4V
C4s,I>~ J II
~ "
~ ,I U
.
"p"'>
:l' ~IOO8 -- (1:~J~:--
f.tf?t
CJ~/<S·C
"
()
~
g .. es•
c
~ 1\
a.
2
10 8 -
,
~ 4
~ ,
~
6 8 10
g 0
0.01
, .. , ." , ." , ...
80.1 I
COLLECTOR CURRENT (IC}-A
10 100
COLLECTOR - TO- EMITTER

92CM-33704 Fig. 3 - Typical de beta characteristics as a
function of cof/ector current for all
Fig. 1 - Maximum operating areas for all types. types.
508 _______________________________________________________________________
POWER TRANSISTORS
RCA9166A, RCA9166B, MJ15022, MJ15024

ELECTRICAL CHARACTERISTICS, at Case Temperature (TC)=25°C

CUR-
r
CHARAC- VOLTAGE RENT RCA9166t RCA9166B MJ15D24 MJ15D22
UNITS ~
'+++mll8:t!!i+~:lI;\:ff!i"!~*H ICflithilittt:;tc-m1t!tHl;
TERISTIC V dc A dc
VCE VBE IC Min. Max. Min. Max. Min. Max. Min. Max.
ICSO
400a - - - - - 1 - - " 2Htt_tlttWHIH
o
350a - - - - - - - 1 01
200 - 1 - - - 0.5 - -
ICEO
150 - - - 1 - - - 0.5
Fig. 4 Typical gain-bandwidth product for all
400 -1.5 - - - - - 0.5 - 0.5 rnA
types.
ICEX 250 -1.5 - - - - - 0.25 - -
200 -1.5 - - - - - - - 0.25 > Ielle -10
I
ICER RSE=100 n, 200 - 4 - - - 4 - - 'W3.~
TC=150°C 150 - - - 4 - - - 4 ~ 3
4 3c 30 - 30 - - - - ""
~2.5
hFE
4 5c 20 - 20 - - - - - ~ 2
4 8c - - - - 15 60 15 60 ~
~ 1.5
4 16c 3.2 - 3.2 - 5 - 5 -
~
VCEO(sus)b 0.1 250 - 200 - 250 - 200 - ~ I
t;
VCER(sus)b ~O.5
0.1 275 - 225 - 275 - 225 - 8
RSE=100 n 0
o 6 a 10 12 14 16 18
VESO IE-1 rnA 5 - 5 - COLLECTOR CUR:RENT CIcl-A nCS-33709
IE=0.5rnA - - - - 5 - 5 -
Fig. 5 - Typical saturation voltage character-
4 3c - 2 - 2 - - - - istics for all types.
VSE V
4 8c - - - - - 2.2 - 2.2
VCE(sat) IS=0.3 A 3c - 1.0 - 1.0 - - - -
IS=0.8 A 8c - - - - - 1.4 - 1.4
IS=3.2 A 16c - - - - - 4 - 4
ISlb tp=0.5 s 80 3 - 3 - 2 - 2 -
A
nonrep. 50 - - - - 5 - 5 -
Ihlel 1=1 MHz 10 1 4 20 4 20 4 20 4 20
IT 10 1 4 20 4 20 4 20 4 20 MHz
Cob 10 a - 500 - 500 - 500 - 500 pF
ROJC 10 10 - 0.7 - 0.7 - 0.7 - 0.7 °C/W
1.4. . 3.4 3.8
BASE-TO-EMITTER VOLTAGE (VeE)-V
aVCB· 92CS-33706
beAUT/ON: Sustaining voltages VCER(sus) and VCEO(sus) MUST NOTbe measured on aeurvetraeer. Fig. 6 - Typical input characteristics for all
See Figs. 9 and 10. types.
cPulsed; pulse duration=300 ps, duty faetor=1.8%.
(VCEI·4V
10
o
o I 2. 3 4
BASE-TO-EMITTER VOLTAGE (VeE)-V
92CS-33110
Fig. 7 - Typical transfer characteristics.
509
POWER TRANSISTORS
RCA9166A, RCA9166B, MJ15022, MJ15024
.... Ie VeER {susl

OR
~ VCEX (susl
'" I I
~i
~u
~!j
8 o'----'-":...,.VCE 0 VeE
NOTE: Th. In'aining V.haves VCEO{,,,"I. VCERhuI) ot, VCEX{lus} ar •
• cc.pl.t.r ...... enth. 1'""el"I1o 10 I'he righlond ..!.o.e I'oin' "j.". (For ... Iuu
~I nne"! GIld yol!og •• n. EI'clricol Chorocleristics.
BASE-TO-COLLECTOR VOLTAGE (Vee) -v OR

BASE-TO-EMITTER VOLTAGE (VSE)-V 92CS-3370e
Fig. 8 - Typica( common-base input or output Fig. 9 - Oscilloscope display for measurement
capacitance characteristics as a of sustaining voltages. (Test circuit
function of reverse voltages for al/ shown in Fig. 10).
types.
27n,2W
6 SERIES-CONNECTED
J, W. MILLER NO. 2881, OSCILLOSCOPE INPUT
OR EQUIVALENT HEWLETT-PACKARD
MODEL NO. 130B.
OR EQUIVALENT
CLARE MERCURY RELAY 14
MODEL NO. HGP-I045 7
OR EQUIVALENT
+-----0 HORIZ.
~ 120V
In
NON. IND.
60 Hz ;---~-OGND
o TO 50V
[500 mAl
loon ;------0 VERT.

(INVERT)
1.5
VCER(susl
L" 21 mH FOR VCEO(SUS)

VCEO(SUS) 0
AND VCER (sus)
L:o 7mH FOR VCEX (sus)
92CS·33103
R" 100,0
Fig. 10 - Circuit used to measure sustaining

voltages VCEO(sUS), VCER(SUS), and
VCEX(SUS) for a/l types.
510 _____________________________________________________________________
POWER TRANSISTORS
TI P29 Series
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors

The RCA-TIP29-series are epitaxial-base, sili- for complementary use with devices in the Features:
con n-p-n transistors intended for a wide var- TIP30-series.
iety of switching and amplifier applications,
• 30 W at 25 0 C case temperature
They differ from each other in voltage ratings. • 3 A rated collector current
such as series and shunt regulators and
driver and output stages of high-fidelity ampli- The TIP29-series are supplied in the JEDEC • Min, fT of 3 MHz at 10 V, 200 rnA
fiers. These power transistors are designed TO-220AB VERSAWATT package. • Designed for complementary use with
TI P30-series p-n-p types
TERMINAL CONNECTIONS
MAXIMUM RATINGS, Absolute-Maximum Values: C

(FLANGE)
TIP29 TIP29A TIP29B TIP29C
VCBO '
VCEO '
40
40
60
60
80
80
100
100
V
V E
I
92C5-27519
V EBO ' 5 5 V
IC' 5 A BOTTOM VIEW
lB' 1 A JEDEC TO-220AB
PT : 0 (See dimensional outline "5".)
At T C ";;25 e 30 30 30 30 W
AtTA ";;25 0 e W e~ NOTE: CURRENT DERATING AT CONSTANT VOLTAGE
At T C > 2SoC Derate linearly 0.24 w/oe ~~

APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION
OF MAXIMUM-OPERATiNG-AREA CURVES DO
NOT DERATE THE SPECIFIED VALUE fOR Ie MAX
T st9 , T J -65 to 150 °e .'='6
T L (During soldering): ~~
At distance 1/8 in. (3.17 mm) from case for ~~
las max. 235 °e gffi'OO
,~
ja 7!i
~~
i:5~50
~o
~! "
~~
" CASE TEMPERATURE ITC1_oC
Fig. 2 - Derating curve for T!P29-series.

T! P29 -series.
Fig. 1 - Maximum operating areas for T!P29-series _
________________________________________________ ~----------------------511
POWER TRANSISTORS
TIP29 Series
ElECTRICAL CHARACTERISTICS, At Case Temperature (TC)=2!jOC unless otherwise specified
TESTCOND. LIMITS
VOLT· CUR.
CHARAC· AGE RENT TIP29 TIP29A TIP29B TIP29C Units
TERISTIC Vdc Adc
VeE IC Min. Max. Min. Max. Min. Max. Min. Max.
ICEO 30 - 0.3· - 0.3 - - - -
16=0 60 - - - - - 0.3 - 0.3 rnA
ICES
40
60
-
-
0.2
-
-
-
-
0.2
-
-
-
-
-
-
-
-
. .. 0.1
...
10
VEB=O rnA COLLECTOR CURRENT "Cl-A

80 - - - - - 0.2 - -
100 - - - - - - - 0.2 Fig. 4 - Typical dc beta characteristics for
TlP29. TIP29A. TIP29B.
IE60
V6E=-5V
0 - 1 - 1 - 1 - 1 rnA
VCEO(sUS)
0.03 a 40b - 60 b - 80 b - 100b - V
16=0
4 0.2a 40 - 40 - 40 - 40 -
hFE 4 la 15 150 15 150 15 150 15 150 :; : COLLjCTOR'TO' EMITTER VOLTAGE I VCE}'4 V
V6E 4 la - 1.3 - 1.3 - 1.3 - 1.3 V

VeE(Sat)
16= la - 0.7 - 0.7 - 0.7 - 0.7 V
0.125A
hIe
10 0.2 20 - 20 - 20 - 20 -
1=1 kHz
Ihlel
1=1 MHz
tON
10 0.2 3 - 3 - 3 - 3 -
0.01
.. 01 I
... 10
(td+ t ,)
Vee= Fig. 5 - Typical dc beta characteristics for
30V 1 0.4 (typ.) 0.4 (typ.) 0.4 (typ.) 0.4 (typ.) TIP29C.
R L =30fl
181=162
=O.lA
J1S
tOFF
(ts+tl)
Vce=
30V 1 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.)
R L =30fl
161=-162
=O.lA
RaJC TI P29-series - 4.17 - 4.17 - 4.17 - 4.17

°e/W
RaJA TIP29-series - 62.5 - 62.5 - 62.5 - 62.5
a Pulsed, pulse duration =. 300 J.1S, duty factor ~ 2%.

b CAUTION: Sustaining voltage, "CEO(sus). MUST NOT be measured on a curve tracer.
512 __________________________________________________________________
POWER TRANSISTORS
TIP30 Series
Epitaxial-Base. Silicon P-N-P VERSAWATT Transistors

The RCA-TI P30-series are epitaxial-base, sili- for complementary use with devices in the
con p-n-p transistors intended for a wide var- TIP29-series.
Features:
iety of switching and amplifier applications, • 30 W at 25°C case temperature
Theydifferfrom each otherin voltage ratings.
such as series and shunt regulators and • 3 A rated collector current
driver and output stages of high-fidelity ampli- The TlP30-series are supplied in the JEDEC
fiers. These power transistors are desig ned TO-220AB VERSAWATT package. • Min. fT .of 3 MHz at -10 V, -200 mA
• Designed for complementary use with
TI P29-series n·p·n types
MAXIMUM RATINGS, Absolute-Maximum Values: C

(FLANGE)
TIP30' TIP30A TIP30S TIP30C
VCSO'
v CEO ·
-40
-40
-60
-60
-80
-80
-100
-100
V
V E
I
9ZC5-21519
v ESO · -5 -5 -5 -5 V
IC ' -5 -5 -5 -5
BOTTOM VIEW
A
IS ., -1 -1 -1 -1 A JEDEC TO·220AB
PT: 0 (Se. dimensional ouliine "5".)
AtT C ';;25 C 30 30 30 30 W
At TA ';;25°C 2 2 W
At T C >2SoC Derate linearly 0.24 wt"c
T stg , T J . -65 to 150 °c NOTE: CURRENT DERATING AT CONSTANT VOLTAGE
APPLIES ONLY TO THE OISSIPATION-UMITED POFiTION
T L (Du;ing soldering): OF MAXIMUM'OPERATING-JI,REA CURVES 00
At distance 1/8 in. (3.17 mm) from case for NOT DERATE THE SPEClftED VALUE FOR Ie MAl(,
las max. 235 °c
7~
" 100 125
CASE TEMPERATURE !TC1-"C
1'n5 200
Fig. 2 - Derating curve to TlP30 -series.
-, a
-10
.. 6
-100
8 10:!! 6 8 10"

2 .. 6 8 105
COLLECTOR- TO- EMITTER VOLTAGE (VCE)- V

Fig. 1 - Maximum operating are .. for TlP30-series. TI P30 -series_
513
POWERTRANSISTORS _________________________________________ ~ ______________
TIP30 Series
COLLECTOR-TO EMITTER
ELECTRICAL CHARACTERISTICS,At Case Temperature (TC) = 2SOC unless otherwise specified
!Q
VOLTAGE IV ) :-4V
TESTCOND. LIMITS i 400 CASJ TEMJEA1TJRJ ('7, )

CHARAC·
VOLT· CUR.
TIP30 TlP30A TIP30B TIP30C Unit.
ffi
~ 200
~
AGE RENT
TERISTIC Vdc Adc ~
~
is
100
80
Pc
VCE IC Min. Mex. Min. Max. Min. MIX. Min. Max. ~ 60
-40·C
a ~\.
ICED
la=O
-30
-60
-
-
-0.3
-
-
-
-0.3
-
-
-
-
-0.3
-
-
-
-0.3 rnA
I
40
20
"" ~~
. .. , . , . , .1'\, .
-40 - -0.2 - - - - - - g
ICES - - - -
-60 - - -0.2 -
rnA
'0 ,
VES=O -80 - - - - - -0.2 - - -0.01 -0.1 "0
COLLECTOR CURRENT CIc1-A
-100 - - - - - - - -0.2
'IEaO Fig. 4 - Typical dc beta characteristics for
0 - -1 - -1 - -1 - -1 rnA
VaE=5V TIP30, TIP30A, TlP30B.
VCEOlsus)
la=O
-0.03" -4ob - -60b - -8ob - -100b - V
··4 -0.2· 40 - 40 - 40 - 40 -
hFE -4 -1" 15 150 15 150 15 150 15 150
VaE -4 -1· - -1.3 - -1.3 - -1.3 - -1.3 V
VCE(s.t)
la= -1" - "0.7 - -0.7 - -0.7 - -0.7 V
-0.125A
hie
1= 1 kHz
-10 -0.2 20 .., 20 - 20 - 20 ..
Ihlel
- .. - -
..
1=1 MHz -0.2 3 3 3 3
. , ..,
-:;,10
'ON
Itd+")
-0.01
. .. -0·1
·'0
VCC=
-30V -1 0.21'yP.) 0:2Ityp.) 0.2Ityp.) 0.2Ityp.)
RL =30!!
TlP30C.
lal=-la2
=-O.lA
ps
tOFF
Itsttl)
VCC=
-30V -1 1 (typ.) lltyp.) lltyp.) 1 (typ.)
RL =301!
lal=la2
=-O.lA
ROJC TIP 30 series - 4.17 - 4.17 - 4,17 - 4.17

°CIW
ROJA TIP 30 series - 62.5 - 62.5 - 62.5 - 62.5
..
a Pulsed, pulse duration" 300 J.IS. duty factor ~ 2%.
b CAUTION: Sustaining voltage. VCEO(susl. MUST NOT be measured on a curve tracer.
514 ____________________________________________ ~-----------------------

POWER TRANSISTORS
TIP31 Series
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors

The RCA-TI P3l-series are epitaxial-base. sili-
con n-p-n transistors intended fora widevar-
for complementary use with devices in the Features:
TIP32-series.
iety of switching and amplifier applications. • 40 W at 25°C case temperature
Theydifferfrom each other in voltage ratings.
driver and output stages of high-fidelity ampli- The TIP3l-series are supplied in the JEDEC • 5 A rated collector current
fiers. These power transistors are designed TO-220AB VERSAWATT package. • Min_ fT of 3 MHz at 10 V, 500 mA
• Designed for complementary use with
TIP32-series p-n-p types
TIP31 TIP31A TIP31a TIP31C
V CBO ' 40 60 80 100 V

VCEO '
V EBO '
40
5
60
5
80
5
100
5
V
V E
I
IC' 5 5 5 5 A 9ZCS-27519
la· 1 A
PT : BOTTOM VIEW
AITC ";;25·C 40 40 40 40 W
JEDEC TO-220AB
AlTA ";;25·C 2 2 2 W
AI TC> 25·C: Derate linearly 0.32 wi"c (See dlmenllonal outline "S"_I
T stg • T J -65 to 150 ·C
~I
NOTE: CURftENT OERATING AT CONSTANT VOLTAGE
APPLIES ONLY TO THE DlSSIPIIlTION-UMITED PORTlOt4
T L (During soldering): OF MAXIMUM-OPERATING-AREA CURVES DO
NOT DERATI: TtE SPECIFIED VALUE fOR Ie MAX.
At distance l/B in. (3_17 mm) from case for
"'~
10s max. 235 ·C
b
ili,oo
iL
"iii
:~'"
wi!!
~I ..
n 215 ~ 1'5 100 1215 15;)
CASE TEMPERATURE ITCI-'"C
17& 200
Fig_ 2 - Derating curve for TIP31-series_
Fig_ 1 - Maximum operating areas for TIP31-series_,

Fig_ 3 - Thermal-cvcling ratings for
TIP31-series.
515
POWER TRANSISTORS - - - - - - - - - - - - - - - - - - - - - - - - - - - -
TI P31 Series
COLLECTOR-TO-EMITTER VOLTAGE I'ICEI. <tv
ELECTRICAL CHARACTERISTICS, At Cur1 TtlmpttrBture (TC) =:J50C un/IllS otherwise specified E400
TESTCOND. LIMITS ~ 200 CAS~ TEMIPEl!~ ITC1~125.C
VOLT- CUR.
~
~
~
CHARAC-
TERISTIC
AGE
Vdc
RENT
Adc
TIP31 TIP31A TIP318 TIP31C Units =
~.. 100
:!: eo
! ....-
-40·C
~
VCE IC Min. MIIx. Min. MIlK. Min. Max. Min. Max. 40
""'" I\..'-'t\
ICEO 30 -
-
0.3
-
-
-
0.3
-
-
-
- -
-
-
I ,.2.
1\
· . ....,
IB=O 60 0.3 0.3 mA
ICES
40
60
-
-
0.2
-
-
-
-
0.2
-
-
-
-
-
-
-
-
~
COLLECTOR CURRENT IIc1-0\

...,.
mA
VEB=O 80 - - - - - 0.2 - -
100 - - - - - - - 0.2 Fig. 4 - Typical dc beta characteristics
for TIP31, TIP31A, TlP318.
lEBO
0 - 1 - 1 - 1 - 1 mA
VBE=-5V
VCEO(susl
0.038 40b - 60b - SOb - 100b - V
IB=O
4 18 25 - 25 - 25 - 25 - : COLLiCTORoTOo EMITTER VOLTAGE I V 1-4V
hFE 4 38 50 10 50 10 50 50
10 10
4 3- - 1.8 - 1.8 - 1.8 - 1.8 V
~ ~TE~~ftlT~~E (Tc}. 12:1.l
VeE CAS~
·
25-C
'-
VCE(sat) -4O·C
- ":"::
···
IB= 38 - 1.2 1.2 - 1.2 - 1.2 V
0.375A
hIe
10 0.5 20 - 20 - 20 - 20 -- "
· . . .. . . . . . .. ,.
1=1 kHz
Ihlel
1=1 MHz 10 0.5 3 - 3 - 3 - 3 - 0.01 D.,
COLLECTOR CURRENT CIe)-A
,
toN
(td+t,) Fig. 5 - Typical de beta characteristics for
VCC= TIP31C.
30V 1 0.4 (typ.) 0.4 (tyP.) 0.4 (typ.) 0.4 (typ.)
RL=30n
IB1=IB2
=O.IA
JJs
tOFF
(ts+tl)
VCC=
JOV 1 1.2 (typ.) 1.2 (tyP.) 1.2 (typ.) 1.2 (typ.)
RL=30n
IB1=-IB2
=O.IA
ROJC - 3.125 - 3.125 - 3.125 - 3.125

,oclW
ROJA - 62.5 - 62.5 - 62.5 - 62.5
a Pulsed. pulse duration" 300 ps, duty factor ~ 2%.

b CAUTION: Sustaining voltage, VCEOfsus), MUST NOT be measured on a curve tracer.
516 __________________________________________________________________
POWER TRANSISTORS
TI P32 Series
Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors

The RCA-TIP32-series are epitaxial-base. sili- for complementary use with devices in the
Features:
con p-n-p transistors intended for a wide var- TIP31-series. • 40 W at 25°C case temperature
iety of switching and amplifier applications. • 5 A rated collector current
They differ from each other in voltage ratings.
driver and output stages of high-fidelity ampli- The TIP32-series are supplied in the JEDEC • Min. fT of 3 MHz at -10 V, -500 rnA
fiers. These power transistors are designed TO-220AB VERSAWATT package. • Designed for complementary use with
TIP31-series .n-p-n types

c
(FLANGE)
TIP32 TtP32A TIP32B TIP32C
V CBO '
VCEO '
-40
-40
-60
-60
-80
-80
-100
-100
V
V E
I
-5 -5 -5 -5 V 92C5-27519
V EBO '
IC' -5 -5 -5 -5 A BOTTOM VIEW
IB . -1 -1 -1 -1 A
PT : 0
JEDEC TO-220AB
AI T C ';;;25 C 40 40 40 40 W (See dimensional outline "S".)
AlTA ';;;25°C 2 2 2 W
At T C >25°C Derate linearly 0.32 W(C
T stg . T J -6510150 °c
T L (During sold~ring): APPLIES ONLY TO THE OISSIF'tITiON-LiMITEO PORTION

OF MAXIMUM· OPERATING-AREA CURVES 00
At distance 1/8 in. (3.17 mml from case for NOT DERATE THE SPECIFIED VALUE FOR Ie MAX.
lOs max. 235 °c
100 125
" CASE TEMPERATURE (TC1-OC
Fig. 2 - Derating curve·
4 ,.
-10 -100
COLLECTOR - TO- EMITTER VOLTAGE (V eE ) - v
Fig. 1 - Maximum operating areas.

NUMBER or THER.MAL CYCLES
Fig. 3 - Thermal-cycling ratings.
_______________________________________________________________________ 517
TIP32 Series
ELECTRICAL CHARACTERISTICS,At Ca8e TemperBture (Tc) = 2fjOC unless otherwitespecified J ;~t~~~!r.:~IJTER

9
TESTCOND. LIMITS li 400 cASJ T,J"JTJ.J"C/""'c
VOLT· CUR. ffi ~
CHARAC·
TERISTIC
AGE
Vdc
RENT
Adc
TIP32 TIP32A TIP32B TIP33:
--
Units
1 200
.... 100
~ ~
VCE IC Min. Max. Min. Max. Min. Max. Min.

~
Max. I! :~ -40ec
r-.... \..\..
ICED -30 - -0.3 - -0.3 - - - - 40
~~
IB=O -60 - - - - - -0.3 - -0.3 rnA ~ 20
ICES
-40
-60
-
-
-0.2
-
-
- -0.2
- -
-
-
-
-
-
-
-
g
10
-0.01
. 4 I •
-0.1
. 4
-I" . 1\.. 4
-10
rnA COLLECTOR CURRENT tIel-A
VEB~O -80 - - - - - -O.~ - -
-100 - - - - - - - -0.2
TlP32, TIP32A, TIP32B.
lEBO
0 - -1 - -1 - -1 - -1 rnA
~BE~5V
VCEO(sus)
IB~O
-0.038 -4ob - -6ob - -80b - -100b - V _ I CClU.E.CTOR-TO-EMITTIER VOLTAGE IVCE'.-4 ...
hFE
--4 -18 25 - 25 - 25 - 25 -
-4 -3a 10 50 10 50 10 50 10 50
VBE -4 -38 - -1.8 - -1.8 - -1.8 - -1.8 V
VCE(sat)
IB~ -38 - -1.2 - -1.2 - -1.2 - -1.2 V
-0.375A
hIe
1=1 kHz
Ihlel
-10 -0.5 20 - 20 - 20 - 20 --
-o.Ot
.. -0·' -I
COLLECTOR CURRENT [ICI-A
..
_10
1=1 MHz -10 -0.5 3 - 3 - 3 - 3 - Fig. 5 - Typical dc beta characteristics for TIP32C.
tON
(td+tr)
VCC=
-30V -1 0.2 (typ.) 0.2 (typ.l 0.2 (typ.) 0.2 (typ.)
RL ~30n
IB1=IB2
=-O.IA
/-IS
tOFF
(ts+tl)
VCC=
-30V -1 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.)
RL ~3on
IB1~-IB2
=-O.IA
R8JC TI P32 ·series - 3.125 - 3.125 - 3.125 - 3.125

ocm
R8JA TI P32 -series - 62.5 - 62.5 - 62.5 - 62.5
--
a Pulsed. pulse duration = 300 /JS. duty factor';; 2%.
b CAUTION: Sustaining voltage. VCEO(sUs). MUST NOTbe measured on a curve tracer.
518 __________________________________________________________~_______
POWER TRANSISTORS
TIP41 Series
Epitaxial-Sase, Silicon N-P-N VERSAWATT Transistors

The RCA-TIP41 series are epitaxial-base, signed for complementary use with devices Features:
silicon n-p-n transistors intended for a wide in the TIP42 series. They differ from each • 65 W at 25°C case temperature
variety of switching and amplifier applica- other in voltage ratings. They are supplied • 7-A rated collector current
tions, such as series and shunt regulators in the JEDEC TO-220AB VERSAWATT
and driver and output stages of high-fidelity package. • Min. fTof 3 MHz at 10 V, 500 rnA
amplifiers. These power transistors are de- • Designed for complementary use with
TI P42 -series p-n-p types

TIP41 TIP41A TIP41B TIP41C TERMINAL DESIGNATIONS
V CBO ............................... . 40 60 80 100 V

Vcro ............................... . 40 60 BO 100 V
VEBO ............................... . 5 5 5 5 V
c
IC ................................... . (FLANGE)
7 7 A
ICM .................................. .
IB ................................... .
PT :
10
3
10
3
10
3
10
3
A
A -,-
E
At TC .;; 25°C ..................... . 65 65 65 65 W 92C5-.21519
At TA .;; 25°C ..................... . 2 2 w BOTTOM ViEW

At T C > 2SoC ........ Derate linearly at 0.52 wf'c
JEDEC TO·220AB
Tstg,TJ .............................. . -65 to 150 °c
T L (During soldering): (See dimensional outline "5".)
At distance 1/8 in. (3.17 mm) from case
for 10 5 max. . .......... '•............. 235 °c
APPLIES ONL.Y TO THE D1SSfPATION-UMITED POATION
OF MUIUUM-OPERATING-AREA CURVES DO
NOT DERATE THE SP(CIFIED VA,LUE fOR IC MAX.
2' 50 l' 100 12' '" 200

CASE TEMPERATURE CTC)~·C
Fig. 2 - Derating curves for all tvpes.
COUECTOR-TO-EMITTER VOLTAGE IVCEI-V
'0'
NUllifiER OF TMERMAl. CYCl.ES
'o'
Fig. 3 - Therma/-cycling ratings for all types.
____________________________________________________________________ 519
POWER TRANSISTORS
TIP41 Series
.
ELECTRICAL CHARACTERISTICS At Ca'se Toempera ture (~)
'c,= 2fiOC
CHARAC- Voltage Current TIP41 TIP41A TIP41B TIP41C
Units
TERISTIC Vdc Adc
VCE IC Min. Max. Min. Max. Min. Max. Min. Max.
'CEO 30 - 0.7 - 0.7 - - - - mA

la=O 60 - - - - - 0.7 - 0.7
'CES 40 - 0.4 - - - - - -
VaE=O 60 - - - 0.4 - - - - mA
80 - - - - - 0.4 - -
100 - - - - - - - 0.4
'EaO
VaE=-5 V
0 - 1 - 1 - 1 - 1 mA
VCEO(sus)
la=O
0.03a 40b - 60b - 80 b - 100b - V
hFE
4 0.3a 30 - 30 - 30 - 30 -
4 3a 15 150 15 150 15 150 15 150
VaE 4 6a - 2.2 - 2.2 - 2.2 - 2.2 V
VCE(sat)
la=0.6 A
6a - 2 - 2 - 2 - 2 V
hfe
f=l kHz
10 0.5 20 - 20 - 20 - 20 -
Ihfel
f=l MHz
10 0.5 3 - 3 - 3 - 3 -
tON ltd +tr)
VCC=30 V,
6 0.6 (typ.) 0.6 (typ.) 0.6 (typ.) 0.6 (typ.)
RL=5n,
'al=la2=0.6 A I I J I Ils
tOFF (ts + ttl
Vce=30 V,
I I I I
6 1.4 (typ.) 1.4 (typ.) 1.4 (typ:) 1.4 (typ.)
RL=5 n,
'al=la2=0.6 A
ROJC - 1.92 - 1.92 - 1.92 - 1.92
°e/W
ROJA - 62.5 - 62.5 - 62.5 - 62.5
a Pulsed, puIs. dUration =300 IJ$, duty factor .;; 2%.

b CAUTION: Sustaining voltage, VCEO (sus). MUST NOTbe measured on a curve tracer.
g '0
, '0
COL.L.ECTOR CURRENT (tc1-A
Fig. 4 - Typical de beta characteristics

for 8/1 types.
520 _______________________________________________________________________
POWER TRANSISTORS
TIP42 Series
Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors

The RCA-TIP42 series are epitaxial-base sil- signed for complementary use with devices Features:
icon p-n-p transistors intended for a wide in the TIP41 series. They differ from each
• 65 W at 25° C case temperature
variety of switching and amplifier applica- other in voltage ratings.
• 7 A rated collector current
tions, such as series and shunt regulators
and driver and output stages of high-fidelity They are supplied in the JEDEC T(}220AB • Min.fTof3MHzat10V,500mA
amplifiers. These power transistors are de- VERSAWATT package. • Designed for complementary use with
TI P41 -series n-p-n types

B
TIP42 TIP42A TIP42B TIP42C
VCBO -40 -60 -80 -100 V C
(FLANGE)
VCEO -40 -60 . -80 -100 V
V EBO -5 - -
IC -7
5
- 7
- 5
- 7 -
5
7
V
A I
E
ICM -10 -10 -10 - 10 A 9ZCS-27519
IB -3 - 3 - 3 - 3 A BOTTOM VIEW
PT :
JEDEC TO-22DAB
AtT C .;25'C •.•...•.••.•..... 65 65 65 65 W
At TA .; 25'C •..•.•...•.•..... 2 2 2 2 w (See dimensional outline "5".)
At T C > 25'C ..•..•. Derate linearly at _ _ _ _ _ _ 0.52 _ _ _ _ _ _ _ __ wfc
Tstg' T J •.••••.••..•..•.••..•.. -65 to 150 _ _ _ _ _ _ _ __ 'c
NQTE:CURRENT DERATING AT CONSTANT VOLTAGE
T L (During solderingl: APPLIES ONLY TO THE OISSIPATION-UMITED PORTION
OF MAXIMUM-OPERATING-AREA CURVES DO
At distance 1/8 in. (3.17 mml from case NOT DERATE THE SPECIFIED VALUE FOR Ie MAx'
for 105 max. . • • • • . • • . . . . . . . • . _ _ _ _ _ _ 235 _ _ _ _ _ _ __ 'c
25 :!O 1~ 100 125 ISO 175 200

CASE TEMPERATURE ITcl·-C
COLLECTDR-lO-EMITTER VOLTAGE 'YcE)-V
N.UMBER Of THERMAL CYCLES
Fig. 1 - Maximum operating areas for all types. Fig. 3 - Therma/~ycling ratings for all types.
521
TIP42 Series
TESTCOND. LIMITS ,
103 e COLLECTOR-TO-EMITTER VOLTAGE I VCEla-4 v f--
VOLT· CUR·
TlP42 TlP42A TIP42B TIP42C , I--- I S
£ ~~~ Tir
CHARACTER· AGE RENT
10 2,
I--- "', ~~.~II
ISTICS V de A de UNITS , -S!5·C
'>
"-<.'~ f--
~
VCE IC Min. Max. Min. Max. Min. Max. Min. Max. ~~ f--
,
1\
ICEO
IS=O
- 30
-60
-
-
-0.7
-
-
-
-0.7
-
-
-
-
-0.7
-
-
-
-0.7 rnA
'0
·
,
ICES
VEB=O
- 40
- 60
-
-
-0.4
-
-
-
-
-0.4
-
-
-
-
-
-
-
-
, ,
-0.01
," -0,1
, ," -I
COLLECTOR ·CURRENT lIe )-A
, ," -10
, , ..
-000
rnA
- 80 - - - - - -0.4 - -
-100 - - - - - - - -0.4 Fig. 4 - Typical dc beta characteristics for
TIP42. TIP42A. TIP42B.
lEBO
VBE = -5V
0 - -1 - -1 - -1 - -1 rnA
VCEO(SUS)
IS =0 -O.O~ _40b - -60b - _BOb - ·100t - V
hFE - -4 -0.38 30 - 30 - 30 - 30 -
·.
-4 -38 15 150 15 150 15 150 15 150 III 10
"
a COLLECTOR-TO-EMITTER VOLTAGE {VeE I a." V =
VSE -4 _6a - -2.2 - -2.2 - -2.2 - -2.2 V i2
, IT
VCE(sat) i ~$£~~
-68 - -2 - -2 - -2 - -2 V 1028
··, V
+.o-tot..f
~
IS =-0.6A
~~~
o '>
hte
~ . ,.J~J.~._ -
t = 1 kHz -10 -0.5 20 - 20 - 20 - 20 -
i5 '0,
'I-
Ihte l
t = 1 MHz -10 -0.5 3 - 3 - 3 - 3 - ~ ,
·
,
tON (td+ t r )
VCC=-30V
g , ,
-0.01
. ..-0.1
, .. , ...-I
COLLECTOR CURRENT lIe I-A
-10
, , ..-''''
-6 0.3 (tyP.) 0.3 (tyP.) 0.3 (typ.) 0.3 (tyP.)
RL =50
ISl = IS2=-0.6A TlP42C.
IlS
tOFF (ts + tt)
VCC=-30V
-6 0.7 (typ.) 0.7 (typ." 0.7 (tyP.) 0.7 (typ.)
RL = 50
ISl = IS2=-0.6A
Rl/JC - 1.92 - 1.92 - 1.92 - 1.92
°CIW
Rl/JA - 62.5 - 62.5 - 62.5 - 62.5
• Pulsed. pulse c;:Iuratlon -
- 300 IJ,S, duty factor ~2%.
b CAUTION: Sustaining voltage, VCEOlsus). MU~T NOT be measured on a curve tracer.
522 __________________________________________________________________
POWER TRANSISTORS
TIP47, TIP48, TIP49, TIPSO

High-Voltage Silicon N-P-N Features:
• Glass passivated chip
VERSAWATT Transistors • VERSAWATT package
For High-Speed Switching • Thermal-cycling ratings
and Linear-Amplifier Applications • Maximum safe-area-of-
operation cu rYes
The RCA-TIP47, TIP46, TIP49, and TIP50 output circuits. They are supplied in the
are silicon n-p-n transistors. Typical JEDEC TO-220AB VERSAWATT plastic
applications for these transistors include package.
high-voltage switches and switching
regulators. TV horizontal-deflection
circuits, power supplies, and TV audio-

c
TIP47 TlP48 TIP49 TIP50 (FLANGE} ,,
V C80 ' 350 400 450 500 V "
VCEO(susl 250 300 350 400 V I
V E80 . 5 5 5 5 V BonOM VIEW

E
IC' 1 A 9ZCS-2.7519
ICM 2 2 2 2 A
18 • 0.6 0.6 0.6 0.6 A (See dimensional outline "S".)
PT :
T C up to 2SoC. 40 40 40 40 W
T C above 2SoC. Derate linearly 0.32 W/oC
T A up to 2SoC. 1.8 W
T st9' T J . _ _ _ -65 to 150 °c
TL:
At distance ~ 1/8 in. (3.17 mm) from
seating plane for 10 5 max. 235 °c
U $0 75 100 125 t!50

CASE TEMPERATURE (TCI--C
Fig.2 - Derating curve fOf all types.
COLLECTOR-lO-EMITTER VOLTAGE (VCEJ- V

92.C5- Z6S56RI
NUMBER Of THER~AL CYCLES
Fig. 1 - Maximum operating areas for all types. Fig.3 - Thermal-cycling rating chart for a1/ types.
________________________________________________________________________ 523
TIP47, TIP48, TIP49, TIP50

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C unless otherwise specified :~ ~~~LEE;~O,:;~~~~~~~T~:C ~~~~~~E (Ve£)-IOV - f -
~ 6
TESTCOND. LIMITS ;:
t--t--=j::::::f#:::::::t-----liri
-~ '-,
VOLT· CUR· g 'I----t---_r~~_r--~~
,,~i__r_r~
CHARACTERISTIC AGE RENT TlP47 TlP48 TIP49 TIP50 UNITS ,~ "f".
Adc
"'O~==~==~==+=~====+====t~=+~
Vdc
VCE IC Min. Max. Min. Max. Min. Max. Min. Max. i
:; 8~
:~--.~--_r~~_r--~----i__r_r~
ICEO 150 - 1 - - - - - -
z
18 = 0 200 - - - 1 - - - -
rnA
~
o
250
300
350
-
-
-
-
-
1
-
-
-
-
-
-
-
-
-
1
-
-
-
-
-
-
1
-
0.01
COLLECTOR
, .0_1
CURRENT IJ:Cl-A
ICES 400 - - - 1 - - - -
rnA Fig.4 - TYlJlcal gain-bandwidth characteristics
VEB = 0 450 - - - - - 1 - - for all types.
500 - - - - - - - 1
lEBO ~ ~~iE~~~~[~~;.~~'~I~~,~T.AcGE I Vetl-IOV
-
--
0 - 1 - 1 - 1 1
V8E = -5 V
rnA :!.
2
4'
~40
10 la 10 - 10 - 10 - 10 - E
hFE 10 30 150 30 150 30 150 30 150 ~ 35
0.3 8
VCEO(sus)
0.3 a 250 b - 300 b - 350b - 400 b - V
~ 2.
>-
IB = 0
VBE 10 la - 1.5 - 1.5 - 1.5 - 1.5 V ~ ,.
VCE(sat)
18=0.2A 1" - 1 - 1 - 1 - 1 V !e 10
\
Ihfel
f = 1 MHz
10 0.2 10 - 10 - 10 - 10 -
g
001
0
, ... • ... • .• •
·0.1
COL.LECTOR CURRENT (Xc'-A
I
'!CS-557l1t
10
fT Fig.5 - Typical de beta characteristics

10 0.2 10 - 10 - 10 - 10 - MHz
f = 1 MHz for a/l types.
hfe - -
10 0.2 25 - 25 - 25 25 COLLECTOR-lO-EMITTER VOLTAGE (VCE) "10'.1
f = 1 kHz CASE TEMPERATURE ITcl'ZS-C
>
ISlb
100 - 0.4 - 0.4 - 0.4 - 0.4 - A
-b 0.8 - -
t = 0.5 s ~
tON (td + tr)c,d

1 0.2 (:YP.) 0.2 \t yp .) 0.2 \tyP.) 0.2 (typ.)
VCC = 200 V
:: 04-
t c,d
sVCC = 200 V 1 2 (typ.) 2 (~YP.) 2 (typ.) 2 (typ.) /1S ~
I:
o
I I
tl,d
I I I I 02
VCC = 200 V 1 0.5 (typ.) 0.5 (typ.) 0.5 (typ.) 0.5 (typ.) i~ 0
I
ROJC - 3.12 - 3.12 - 3.12 - 3.12 G 6 I 0 1000
COLLECTOR CURRENT (ICI-mA
°C/W
ROJA - 70 - 70 - 70 - 70
Fig.6 - Typical base· to-emitter voltage vs.
collector current.
" Pulsed, pulse duration = 300 /1S, duty factor <;; 2% ..
b CAUTION: Sustaining voltage, VCEO(sUS), MUST NOT be measured on a curve tracer. 0' CASE TEMPERAiUR1"C ,. ,,·c
C See Fig. 9. ~
d 181 =182=0.1 A. ~
> o. f---- ---- II
~ I
~~
~
0.3
r--+ i '
1--I- /
~
»v .,J(' L
.>
"I ,
~]o2 -_. -----

t.t!
gC-J i
I
01
~ 0
10
i.
, .,, 100
COLLECTOR CURRENT (I c )-mA
,I .,. /000
Fig.? - Typical saturation·voltage characteristics

for all types.
524 _____________________________________________________________________
POWER TRANSISTORS
TIP47, TIP48, TIP49, TIP50

Vee
INPUT FROM
HP-ZJ4A IICC·ZOO II
PULSE
GENERATOR
I ZG • 50 OHMS)
Iel·182 -VSB
INPUT PULSE DURATION· 20 iJ-'
ncs-z•• ,o
REP. RATE· 1000 Hz
Fig.S - Circuit used to measure saturated switching times.
~~I-__ -+-.____--'-+_-,-t-_...;.TIME
lila I
I INPUT WAVE" FORM
I
I
I
I
I
I
:-90"'"
I
I I:
I_~tf __'0"'. TIME
TURN-ON t, TURN-OFF
TIME TIME
OUTPUT W.02V£ FORM
92CS-12874
Fig.9 - Phase relationship between input and output currents, showing
reference points for specification of switching times.
_____________________________________________________________________ 525
POWER TRANSISTORS
TIP100, TIP101, TIP102

a-Ampere N-P-N Darlington Features:
Power Transistors • Operates from Ie without predriver

60,80, and 100 Volts, 80 Watts
Gain of 1000 at 3 A
The RCA-TIP100, TIP101 and TIP102 are Applications: C

monolithic n-p-n silicon Darlington tran- (FLANGEI
sistors designed for low- and medium-fre- • Power switching
quency power applications_ The double epi- • Hammer drivers
taxial construction of these devices provides • Audio amplifiers
good forward and reverse second-breakdown • Series and shunt regulators 92CS-27519
capability; their high gain makes it possible
for them to be driven directly from integrated JEDEC TO-220AB
circuits_
These devices are supplied in the JEDEC
TO-220 AB (RCA VERSAWATT) plastic
package_
------------,
I
I
I
TIP100 TIP10l TIP102 I
V CBO ' I
60 80 100 v
VCEO(sus) 60 80 100 V
I
V EBO ' 5 V
IC - 8 A
ICM 15 A
18 A Fig. 2 - Schematic diagram for all types.
PT :
T C up to 25°C 80 _ _ _ __ W
T C above 25°C . Derate linearly at 0.64 _ _ _ __ W/oc
T stg • T J . _ _ _ _ -65 to 150
°c NOT£ CURR£NT D£RATING AT CCWSTAlolT
TL VOLTAGE APPUES ONLY 10 THE 015SIPATION-
At distance >1/8 in. (3.17 mm) from case for 10 s max. 235 _ _ _ __ °c LIMITED PORTION AND THE IS/b -LIMITED
~ PORTION Of MAXIMUM OPERATING AREA
CURVE. 00 NOT oERAT£ THE
~ SPECIfiED VALUE FOR :Ic MAX
0
~
100 12~
CASE TEMPEAATUfl£ (TCI--C
COLLECTOR-lO-EMITTER VOL lAGE evCE)- V 92CM-3Ir2~

L-~~--~--~~--~--~~--~--~12
9<'CS-3rI27
Fig. 1 - Maximum operating areas for all types (TC == 2ff1C). Fig. 4 - Typical dc-beta characteristics for all types.
526
POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, At Case Temperature (TCJ = 2!PC
CHARAC· Voltage \Current \
TERISTIC Vdc Adc TlPloo TIP10l TIP102 UNllS
VCE V8E Ie 18 Min. Max. Min. Max. Min. Max.
ICBO
60 - 50 - - - -
IE = 0 SO - - - 50 - -
100 - - - - - 50
/J A
30 - 50 - - - -
ICEO 40
50
°°
0
-
-
-
-
-
-
50
-
-
-
-
50
-5 - - -
lEBO
VCEO(sUS)
°
0.03 b 60
S
- SO -
S
100 -
S mA
V
hFE
4 3b ° 1000 20,000 1000 20,000 1000 20,000
4 sb 200 - 200 - 200 -
VBE 4 Sb - 2.S - 2.B - 2.B
VCE(sat)
3b 0.006 - 2 - 2 - 2 V
Sb O.OB - 2.5 - 2.5 - 2.5
VF -10 - 2.S - 2.B - 2.B
td C S O.OS 0.035 typo 0.035typ. 0.035 typo
trC B O.OB 0.35 typo 0.35 typo 0.35 typo
tsC /Js
B O.OBd 1.S typo 1.B typo 1.B typo
tfC B O.OBd 2.45 typo 2.45 typo 2.45 typo
ISlb
t=0.15 s noh· 40 2 - 2 - 2 - A
rep. pulse
ROJC - 1.56 - 1.56 - 1.56 oCIW
• V CB value. b Pulsed: Pulse duration"" 300 IJS, duty factor <;2%,
TIME
INPUT WAVE FORM
Ti
I
I
I
I
-- CON&~ION t-
PULSE DURATION
20,.1 POSITIVE VOL-TAGE
20 ",S NEGATIVE vOLTAGE
REP. RATE' 200 Hl
.. lei AND I92 ARE MEASURED WITH TEKTRONIX CURRENT
PROBE PSOl9 AND TYPE 134 AMPLIFlER,OR EQUIVALENT
Fig. 5 - Circuit used to measure saturat"ed switching Fig. 6 - Phase relationship between input current
times. and output current showing reference
points fOf specification of switching
times.
________________________ ~--------------------~---------------------527

a-Ampere N-P-N Darlington Power Transistors Features:
60, 80, and 100 Volts, 65 Watts • Low leakage at high temperature
Gain of 1000 at 0.5 A • High reverse second-breakdown capability
• Power switching • Audio amplifiers
The RCA-TIP120, TIP121, and TlP122 are These devices are supplied in the JEDEC TO· • Hammer drivers
monolithic n-p-n silicon Darlington transis- 220AB VERSAWATT package. • Series and shunt regulators
tors designed for low- and medium-frequen-
cy, power applications. The double epitaxial The TlP120, TlP121 and TlP122 are n·p·n
construction of these devices provides good
complements of the TIP125, TIP126 and TERMINAL DESIGNATIONS
forward and reverse second-breakdown
TIP127.
capability; their high gain makes it possible
for them to be driven directly from inte- 8
grated circuits.
I: /c
I I
I I
II
Lrt.~~~
E
I
92CS-27519
TIP120 TlP121 TlP122
BOTTOM VIEW
VCBO' 60 80 100 v JEDEC TO·220AB

VCER(sus) (See dimensional outline "S".)
RBE -100 n. 60 80 100 V
VCEO(sus) 60 80 100 V
VCEV(sus) r-----------,
V BE = -1.5 V 60 80 100 V I I
V EBO ' 5 5 5 V I I
IC' 8 8 8 A I I
10 10 10 A
ICM
0.25 0.25 0.25 A : I
lB'
PT : I I
TC upto 25:C 65 65 65 W IL _ _ _ _ _ _ _ _ _ -lI
TC above 25 C Derate linearly at 0.52 W/C
Tstg·TJ .. -65 to 150 °c
TL
At distance ~ 1/8 in. (3.17 mm) from case for lOs max. 235 °c Fig. 1 - Schematic diagram for a1/ types.
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V COLL[CTOR-TO-[NITT[R VOLTAGE IVCE 1-1i
Fig. 2 ..... Maximum operating areas for TIP120 and TIP121. Fig. 3 - Maximum operating areas for TIP12r.
528 __________________________________________________ ~-----------------

POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, At Case Temperature ITc) = 25°C NOTE Cl.FIRENT DERATiNG AT CONSTANT
VOLTAGE APPUES CtOLY 10 THE DISSIPATION-
LIMITED PORTION AND THE IS/b-LlMITEO
TEST CONDITIONS LIMITS PORTION OF MAXIMUM OPERATING AREA
CURVE. 00 NOT DERATE THE
SPECIFIED VALUE FOR Ic MAX
CHARAC- Voltage Current
TIP120 TIP121 TlP122 UNITS
TERISTIC Vdc Adc
VCE V SE IC IS Min. Max. Min. Max. Min. Max.
60 - 0.2 - - - -
ICBO 80 - - - 0.2 - -
IE=O 100 - - - - - 0.2
mA
30 a - 0.5 - - - -
ICED 40 0 - - - 0.5 - -
CASE TEMPERATURE lTCI-'C
50 0 - - - - - 0.5
2 2 Fig. 4 - Derating curve for all types.
lEBO -5 0 - - - 2 mA
VCEO(susl 0.2a 0 60 - 80 - 100 - V
3a -
hFE
:3
3 0.5 a
1000
1000
-
-
1000
1000
-
-
1000
1000 - !':
0
10 :
. COLLECTOR-TO-EMITTER VOLTAGE (VCE)- 3V
I
F
V BE 3 3a - 2.5 - 2.5 - 2.5 V ~ 2
3a 0.012 - 2 - 2 - 2 ~ 1048
J
V CE (satl V
5a 0.02 - 3 - 3 - 3 ~ 'r-b~
~ 'r-VI
hfe
5 1 1000 - 1000 - 1000 - ~a 'V I 103
'/-.;(,
f=l kHz , e \.1.
",.
~ 6r--~1>1..§-~
Ihfel 5 1 20 - 20 - 20 - ~ :t?;.,,~,ol J
f=l MHz
Cobo
g 102 c.1>
, ... , , . ., " , . , .
lJ
VCB=10 V - 200 - 200 - 200 pF
f=l MHz Fig. 5 - Typical dc beta characteristics
for all types.
ES/b
L=12 mH, -1.5 4.5 120 - 120 - 120 - mJ
RSE =100 S1 100e
,
ISlb
~ 4
t=0.5 s non- 25 2.6 - 2.6 - 2.6 - A I ~",O<, I
rep. pulse ~ , ~~~
ReJC - 1.92 - 1.92 - 1.92 °C/W Ii f:~""",
~ 10, 1;.rc..:
illc ,u "'<"
a Pulsed, pulse duration == 300 /lS, duty factor ~ 2%.
~
w
4 ~ fl "1+G'('
~ 2 "
~ I~"'" I~ ~~.
1
;:
IT
2 4 , , 1\ ,I ,
10 4 lOS
2 4
rR 2
4 "
92C$-26424
Fig. 6 - Thermal·cycling rsting chart for a/l types.
COLLECTOfl CURRENT tIel' I A 17.:1 COLLECTOR-TO-£MITTER VOLTAGE (VCE)' 3V

COLLECTOR-lO-EMITTER VOLTAGE (VCE) -5Y
H
CASE TEMPERATUREtTC}'Z5'C
~
:;
~ > 5
:;1
1 . E 12,5
"= i I
I
~! " ; 10
~1 3 J 11 !) "
U t i~ ~lF
j
8
, :J
, f+
.hFE'IOOO,TC· •IOOC
' I -I
.'
C
T, . "., 1-
' " • "00,
12"!,111TllTTn-IT
FE'IOO,TcaIOO'C-
1111111:1111r;--r
~l+±iml)1 i il"l'll
~
'i
. ,. 1\ j~ ~ I~ , , Itmiflli Uilllillill
,.
0 2 4
0'
FREOUENCY {fl-MHZ
" "
COLLECTOR CURRENT (IC1- A BASE-TO-EMITTER VOLTAGE (VBE)-V
Fig. 7 - Typical small-signal current gain Fig. 8 - Typical saturation characteristics Fig. 9 - Typical input characteristics
___________________________________________________________________________ 529

I"SE "MPER""" r,' ,,,., ,fi'liIl1i!'i 'HI :::i :i': 11: COLLECTOR-lO-EMITTER ~OLTAGE (VC~) .-3~ COLLECTOR SUPPLY VOLTAGE (Vcc1a20 v
Ie,= -162' Ie/SOQ
:lliH !Ji;ljl:::ij iP 11 ,
4
,/
/ - 1;:::
~
r"
2 ./" "'-
<"
i g,2jiplI
L BASE
4
.. .... ....
CUR~EN.T \~B}
,
,.1,
.0.5 rnA
8
'.i tm1
f!i!I!Ui!!lj: ;!:: 0
,
--- ,
,...-
, . , . .,
b,:.
'd~
r
COLLECTOR-lO-EMITTER VOLTAGE (VCE) -!.cs- 24906

BASE-TO-EMITTER VOLTAGE (VBE1-V92CS_24907RI COLLECTOR CURRENT IIC1- A
Fig. 10 - Typical output characteristics Fig. 11 - Typical transfer characteristics Fig. 12 - Tvpical saturated switching characteristics
530 ____________________________________________ --------------------------~

POWER TRANSISTORS

8-Ampere P-N-P Darlington Power Transistors Features:
• Operates from IC without predriver
-60, -80, and -100 Volts, 65 Watts • Low leakage at high temperature
Gain of 1000 at -3 A • High reverse second· breakdown capability
Gain of 500 at -0.75 A Applications:
• Power switching • Audio amplifiers
The RCA-TIP125, TIP126, and TIP127 are r---------l • Hammer drivers

.' Series and shunt regulators
monolithic silicon p-n-p Darlington tran- I I
sistors designed for low and medium-fre- I I
quency power applications. The high gain : I
of these devices makes it possible for them I I
to be driven directly from integrated cir- IL _ _ _ _ _ _ _ _ _ ..JI TERMINAL DESIGNATIONS
cuits.
E
These devices are supplied in the JEDEC 92CS-20663RI
TO-220AB VERSAWATT package. Fig. 1 - Schematic diagram for all types.
The TlP125. TIP126 and TlP127 are p-n-p

complements of the TIP120. TIP121 and
TIP122.
BOTTOM VIEW
TIP125 TIP126 TIP127 JEDEC TO·220AB
VCBO ' -60 -80 -100 V
VCEO(sus) -60 -80 -100 V
V EBO ' -5 -5 -5 V
IC' -8 -8 -8 A NOTE, ClRRENT DERATING AT CONSTANT
IIOt..TAGE APPUES (follY 10 TME DISSIPATIQN-
ICM -15 -15 -15 A LIMITED PORTJON AND THE l.S/b -LIMITEO
18 -0.25 -0.25 -0.25 A CURVE. 00 NOT DERATE THE
SPECIFIEO VALUE FOR rc MA)(
PT :
T C ';;;25°C 65 65 65 W
TC >25°C TIP125, TIP126, TIP127 Derate linearly at 0.52 W/C
T stg , T J _ _ _ -65 to 150 °c

TL
At distance 1118 in. (3.17 mm) from case for lOs max. 235 °c
1m zoo
CASE TEMPERATURE ITCl-"C
100S
,
~ 4
I ~~I
~ , ~~~
z
0 ~...~"
~ 10
, +4J-t.;.
~~
gj
<5
:~ n
~
lr ," ~
~
"
~ ~~~.
~
0>.
COUECTOR-TO-EMITTER VOLTAGE (VCE)-V

I
.:' 1\ , , 1\
, 4 , ,I ,rR , 4
10 4 10 5 4 "
Fig. 2 - Maximum operating areas for all types. Fig. 4 - Thermal-cycling rating chart for all types.
----------------------_______________________________________________ 531
···,
ELECTRICAL CHARACTERISTICS At Case Temperature (TC) = 2!PC COLLECTOR-la-EMITTER VOLTAGE IYCEI~-l y -
CHARAC- Voltage Current TIP125 TIP126 TIP127 UNITS
TERISTIC Vdc
VCE
-30
Adc
IC 18
0
Min.
-
Max.
-0.5
Min.
-
Max.
-
Min.
-
Max.
-
fO:
;:-r-
E2
r ~~
-
ICEO -40 0 - - - -0.5 - - rnA : 8- ~'V
lo3_1--''I.'';i II(..\.
~~q;.
~q..A
-50 0 - - - - - -0.5
6-
.~~~ I
lEBO
VBE=5 V
VCEO(susl
0
-0.038 0 -60
- -10
-
-
-80
-10
-
-
-100
-10
-
rnA
V
10,/1,
-0.1
. ,I . , . .. , . ..
-I -10
COLLECTOR CURRENT {lei-A
-3 -0.75 8 500 - 500 - 500 - Fig. 5 - Tvpical de beta characteristics for all types.
hFE -3 _38 1000 - 1000 - 1000 -
V8E -3 _38 - -2.5 - -2.5 - -2.5 V COlLECTOR-TO-EMITTER VOLTAGE {VCE"-' V
-
VCE(S8tl
_38 -0.012 -
-58 -0.02 -
-2
-4 -
-2
-4
-
-
-2
-4
V .
"12.5
·1'
hfe ~
f=1 kHz
-5 -1 1000 - 1000 - 1000 - a -10
I
Ihfel a -1.5
-5 -1 20 - 20 - 20 -
f=1 MHz
ISib
t=l·s nonrep. -20 -3.2 - -3.2 - -3.2 - A
I··...
pulse
-I -.2 -3
ROJC - 1.92 - 1.92 - 1.92 °C/W BASE-TO-EMITTER VOLTAGE IVaEI-V
a Pulsed: Pulse duration = 300 IJ.s. duty factor ~ 2%.

Fig. 6 - Typical transfer characteristics foralt types.
Vee·- 20V
181,,"0.0I2A,I82'O 01.2A
IA TC'2!1'C
1.2~--
O.6~-
0.4 "'-.... ;-_
o.,-·--~==~-:::::r-: -HH-+-l
5 , 1 8 "-10
COLLECTOR-lO-EMITTER YOLTAGE (VeEI-V
Fig. 7 - Typical output characteristics for a/l types. F.ig. 8 - Typical saturated switching-time
characte~ist;cs for all types.
532 ____________________________________________________________________
TIP562, TIP563
Silicon N-P-N Switching Transistors Features:

VCEO - 300 V and 400 V
Ie 10 A
For Switching Applications in Pr - 100 W
The RCA-TIP562 and T1P563 silicon n-p-n lators, and a variety of power·switching
power transistors feature fast switching circuits. TERMINAL DESIGNATIONS
speeds, low saturation voltage, and high The RCA-TIP562 and TIP563 transistors
safe-operating-area (SOA) ratings. They are supplied in steel JEDEC TO-204MA
are specially designed for converters, hermetic packages.
inverters, pulse-width-modulated regu-

TIP562 TIP563
JiODEC TO-204MA
Vcso ................................................... . 300 400 v
VCEo(sus) ............................................... . 300 400 v (See dimensional outline "A".)
VESO ................................................... . 8 V
~ .................................................. . 10 A
ICM' .................................................... . 15 A
IS ...................................................... . 2 A
PT:
AtT Cup 10100· ........................................ . 100 w
TJ,T sI9 ................................................. . -6510 +200 ·C
TL:
AI distances;' 1116 in. (1.58 mm) from case for 10 s max. 200 ·c
100
100 200 250

CASE TEMPERATURE (T c)-"c
92CS-32250
Fig. 2 . Dissipation derating curve.
0.01
2- 468 2- 468 2- 468
0001 001 01 10
COLLECTOR -TO-EMITTER VOLTAGE (VCEI- V PULSE WIDTH (Ip)-S
nCM-:32Z61
Fig. 3 . Typical thermal·response

Fig. 1· Maximum operating areas ITC = 100'C).
characteristic.
______________________________________________ 533
POWER TRANSISTORS
TIP562, TIP563
ELECTRICAL CIiARACTERISTICS, At Case Temperature (TcJ=25°C
TIP562 TIP563 UNITS
TERISTIC Vdc Adc
VCE VaE Ic la Min. Typ. Max. Min. Typ. Max.
ICEO
270 -
.,..
0 - - - 1 - - - rnA
360 - 0 - - - - - 1
ICBO, 300b - - - - - 1!IIt - - - ,..A
IE=O 400b - - - - - - - - 100
lEBO -8 0 - - - 5 - - 5 rnA
VCEO(sus)8 - -
0.1 - 300 - - 400 - -
VBE(sal)a - -
10 1.66 - - 1.4 - - 1.4
V
VCE(Sal)2
- -
10 1.66 - - 1.2 - - 1.2
- -
15 5 - - 2.0 - - 2.0
hFEa
4 -
1.0 - 20 - - 20 - -
4 -
10 - 8 - - 8 - -
ISlb,lp
= 1 s, non· 40 - - - 2.5 - - 2.5 - - A
repelltlve
VCC=
Id
180 V
-5.2 10 2 - .05 - - .05 -
!VCC= -5.2
Ir
180 V
10 2 - 0.5 - - 0.5 -
Is I"CC=
,..s
(IB1 =IB2) 180V
-5.2 10 2 - 1.2 - - 1.2 -
If I"cc- -5.2 10 2 - 0.3 - - 0.3 -
(lB1 = IB2) 180 V
Ie •.
VCC=135V
L= 5O I'H
- -6 1<1 2 - - 700 - - 700 ns
RC= 13.5 Q
R9JC - - - - - - 1.0 - - 1.0 0c/w
."
aPulsed, pulse duration =300 "S, duly faclor <2%. bVes value.
1.2:~~
~
~ .1
J ,)c '/
-
z
">
~.b
ai :::s "
0.8
.. 'MPEit""URE"c2~~
___ ffl-C L
~
;
~
~~O,6 - I -~ L
,,-
7 0.4-
-~ ---
i
0.5
.. 2 4 6 8
COLLECTOR CURRENT lIe) -

10
A
40
0 .•
2 4
8 I
. 2
10
. .. 2 .60 1 1 1
COlLECTOR CURRENT tlcl - A
92CS-3225t 9i!CS-322"
Fig. ". Typical de beta characteristics Fig. 5· Typical base·to-emltter saturation FIg. 6 . Typical collectoNo-emllter satf/ratlon
for both types. voltage characteristics for voltage characteristics for
both types. both types.
534
Power Hybrid Circuits
Technical Data
- _ _ _ _ _ _ _ _ _ _ _ _ _ 535
POWER HYBRID CIRCUITS
HC2000H, HC2500
Multi-Purpose 7-Ampere Operational Amplifiers
Linear Amplifiers for Applications in Industrial and Commercial Equipment
Features:
• Bandwidth: 30 kHz at 60 W
The RCA-HC2000H and HC2500 hybrid- maximum total harmonic distortion of • High power output: up to 100 W(rms)
circuit operational amplifiers are designed 0.5 per cent over a bandwidth of 30 kHz • High output current: 7 A (peak)
for operation from either single or split at a power output of 60 watts and a • Low IMO and THO
power supplies at output currents up to typical intermodulation distortion of less • Adjustable idling current
7 amperes and power outputs up to 100 than 1 per cent at rms power outputs • Stability with resistive or reactive loads
watts. These versatile amplifiers are re- from 0.2 to 70 watts. At an rms output • Single or split power supply
commended for servoamplifiers, audio of 50 milliwatts, the HC2500 has an (30 to 75 V, single, ± 15 to ±37.5, split)
power amplifiers, driven inverters, power exceptionally low typical intermodulation • Class AB output stage (HC2500)
operational amplifiers, deflection ampli- distortion of only 0.06 per cent. Class B output state (HC2000H)
fiers, solenoid drivers, voltage regulators, • Direct coupling to load
and similar linear-amplifier power appli- • Built-in load-line-limiting circuit to
The HC2000H includes a load-line limiting
cations. They are supplied in a metal protect amplifiers from accidentally
network that provides protection against
hermetic package. short-circuited output terminals
short-circuit loads and against high-energy
The HC2000H and HC2500 employ a transients when the amplifier is used to (HC2000H)
quasi - complementary - symmetry output drive inductive loads. Both circuits also • Reactive-load fault protection (HC2000H)
stage with hometaxial-base output transis- feature adjustable idling current and direct • Socket available
tors. They feature low distortion, with a coupling to the load. • Rugged pack'age with heavy leads
,. .Light weight: 100 grams
MAXIMUM RATINGS, Absolute-Maximum Values: HC2000H

TERMINAL DESIGNATION
Vs: HC2500
Between leads 1 & 10 75 V
10M , 7A
PT :
See Figs. 3 &04
nen
Per Output Device
T~tg . . -55 to +125 oC
TJ . -55 to +150 C
T L (During Soldering):
At distance;::: 1/8 in. (3.11 mm) from case for las max.
rpL IMinl:
At distance;:::'O.075 (1.91 mm) from case 0.04 in. 11.02 mml
HC2000H, HC2500
(See dimensional outline "AA".)
92CS-17574RI
Fig. 1 - Schematic diagram of type HC2000H Fig. 2 - Schematic diagram of type HC2500
operational amplifier. operational amplifier.
536---------------------------------------------------------------------
HC2000H, HC2500
COMPARISON CHART SEEFICtfORDERATlHCfORSV .. ETRICAl·
IA'IEf'OAMSIITHI>tOH •.
TYPE IMOIST.
OUTPUT
PROTECTION OPERATING
MODE
FREQUENCY
COMPENSATION
CQMMUTATING
DIODES
~'S1 -.:~!
........ .-
.... t-~.
NETWORK
0.06% CAPACITOR ON
HC25QO NO CLASS AD NO
@l50mW SIGNAL TERMINALS
0.6% LC FILTER
HC200DH YES CLASS B YES
@200mW ON OUTPUT
HC2000H
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25"C
7S I2S ISO
TEST CONDITIOIIIS LIMITS CASE TUPI!:JIATUIIE (TCI-"C
VS-V f -kHz PO-w RL-n MIN. TYP. MAX. Fig. 3 - Dissipation (de) derating curve for
each output transistor for both types.
VOUT
\i"iN ±37.5 1 25 4 - 2000 -
Open·Loop AVERACEPOIIERDISSIPATIOM 11'1 EACH
OUTPUT TRAHSISTOII CAM 81 CAl..CUUTED
fRa. PT(A'II" Po ~.~. AHD EFFICIEHCT
Closed· Loop ±37.5 1 1 4 26 30 - fRDM~"; ~.IHEREPOISTHEOIJTPUT

POIIER AND 'lOll IS TttE PEAK ..... LUEOF THE
OUTPUT VOLTAGE.
FOItEfflCIEHCTDEAATINGATHICH
ZIN fREQUENCIES. SEE FIC. 10.
Measured between - - - - 15.9 18 - kn

leads 7 & 8
10 ±37.5 - - - 15 - 30 rnA
vlO
Measured between ±37.5 - - 4 0 ±30 ±250 rnV
leads 4 & 5 CASE TEMPERATURE ITCI- OC
Fig. 4 - Diss;pation (average) derating curve

VOUT ±37.5 1 100 4 28 32 - V
for each output transistor (fo; sym'
fH metrical wave· forms with f>40 Hz)
(See Fig.9)
±37.5 - 1 4 43 - - kHz for both types.
THD
(See Fig. 10)
±37.5 1 60 4 - 0.4 0.5 % PQIUSUPPLYSPLITI'IS·!l1·S'I,
CASETEIIPERATUREITC"ZSOC
IS
(See Fig. 12)
±37.5 1 - 0 ±2 - ±3.85 A
SIN
±37.5 - - - - 78 - dB
ZG = 600 n
!
:;; OlFORTEIPERATUREOUATIHC.THE
II
SR AYERA&EPOIEROtSSIPATlOHtHEACH
(Unity gain, ±37.5 1 100 4 4.5 - - V//-Is

OUTPUl TRANSIHOR CAN BE CAL·
(l.2CUlAT(DFROMPTIA'Il·PO~
--+_.-1--+-+11
0.1 '
10M = 4A)
fAEOUEHCVtfl_H.
ROJC
Per Output Device - - - - - - 2 °CIW Fig. 5 - Maximum efficiency vs. frequency
(See Figs. 3 & 4) for several values of peak load cur·
rent for both types.
HC2500
ELECTRICAL CHARACTERISTICS. At Case Temperature (Tc) = 2~-c and Supply Valra~ (VSJ = %375 V
REFER· TEST CONDITIONS LIMITS
CHARACTERISTIC ENCE OUTPUT LOAD MIN P
FIG. SPECIAL FREQ. POWER RESIST. . TV . MAX. UNITS
NO. NOTES (f)-kHz 1POI-W IALI-n
Measu-ed
Vallset Pm 310 Gnd
- ±250 mV
IdlmgCur·
'0 rent < 1 rnA
Open !30 mA
VOUT Peak dc'Voltage 200 28 ·V
'H 43 kHz
THO 21 60 - 0.3 0.5 %
ACL 31 32 Fig. 6 - Minimum load impedance vs. load

phase angle and safe area of opera·
ROJC 3.4 C/W
tion for both types.
______________________________________________ ~ ________________________ 537
HC2000H,HC2500
HC2500 C45ETE.,.EIUoTUREfTC)02.5"'C
ELECTRICAL CHARACTERistiCS (Cont'd)

Ty..... V.... 11or - . . Qui_,.
At C- Tom",,.,.," (TCI- 2!t'C MOd Su"";' VoI_ (VSI- t/37.5
REFER· TEST CONDITIONS LIMITS

ENCE OUTPUT LOAD
CHARACTERlsnc FIG. MIN. TYP. MAX. UNITS
SPECIAL FREo. POWER RESIST.
NO. NOTES (fl ....H. ('o'-W (RLI-Sl
fdlingcur·
AoL 16 rent "'SOmA
1 25 4 - 70 - dB
V,O - 0 0_ - :t:l0 - mV
',0 - 0 0_ - 7 - pA 1 2 J • 5 6
MINIMUM LOAO RESISTANCE IAL 1-0
liB - 0 0_ - ZO - pA
Fig. 7 - Maximum allowable supply voltage
RC", 0.005 0 Open - 1 - Mn
vs. load resistance for HC2000H.
V,CR 0.5 100 4 - 32 - V
CMRR 0.005 0 Open - 50 - dB

t •
VRR 0.05 0 4 - 30 - dB
Idling cur·
§I"
~
t _
IMD 20 rent· SOmA - 0.05 4 - 0.05 - % Z 40
~
AcL - 2 ,D.S
SR 24 c.' l00pF 'Square - 4 - 4.3 - VIlAS
Wov.
.6li 23 25°C to 10CtC - - 4 - 1 - mAl'C
1000 lOOO )000

EXTERNAL FEEDBACK RESISTANCE "",)-11 .000
Fig. 8 - Closed-loop voltage gain vs. external

feedback resistance for HC2000H.
NOTe;, LOW.f'RII!QlJEMCY' RESPONse: OEPEHDEMT POWERWPPLY SPLLTf'~. U7,SVI

UPON INPUT NETWORK: SEE FIG. 2. L'itAORESISTANCtrRLlo'l!
FEEDIACkRE5I5TAHCEfRGI '1O!!
"PLITUOE(fl"'OH.14
POWER SUl"PLT,Sf'f.IT(\'S· !"J7.5V) iiji[jTiiDE ~rtt " H H, • i
;
!' t--
•~ 'r-~-+-rtr~--+-Hh~+--r~
~"r--t-+-ti+-I-++++-+--t-1+1
i··I--"k:-+-+++_·-r·-j--H-1--t--tt-t-t-1
r
..........
~··r-~...,,*tr~--+-f+jl---+V-/-H-H
'.1
"II-tl-tf"1:::::::ijtj::jP"i-Tffi
10 100 11[ 10' 100' O.l 0.4D.611.11 • 1l.0.6D.1I 2 4 6 ' ICI
FREQUENCY III - N. OUTPUTPOWBtIPO!_W OUTPUT POIlER/POI. W
Fig. 9 - Output power vs. frequency for Fig. 10 - Total harmonic distortion with split Fig. 11 - Intermodulation distortion with
HC2000H. power supply for HC2000H. split supply and 4-ohm load for
HC2000H.
OUTPI!T YOLTAGf I'IOI_V
Fig. 12 - Characteristics of built-in load-line- Fig. 13 - Gairi linearity characteris·tics

limiting circuit for HC2000H. for HC2000H.
538 ______________________________~~--------~--------------------
HC2000H, HC2500
I~. n
·
"lkH, MAX.OUTPUT 100 LOAD RESISTANCE (RL,"4
SPLIT POWER PDlrER SUPPL.Y VOL.TAGE Il/sllt3?!!"
'>~ .
SUPPL'r
.
MID-BAND OUTPUT POWER'25 W
"
...':~ 8.
.
,
'~'>,>
I r-'
'tf,
f'-,.'0+
~
c
I
80'r---i--i-t--+-+-+- 6. r", 1'1..
~!
··· CASE TEMPERATURE ITcl'2~'e

f
s
~'r---ir--t--+-+-~~+-
:;il 4or-r-r--t--+-+7'-+--7''I--bl-l
__~r1
. ,~~~ ~
~~s~~
C'
o~.oo~~
,
(CURVES MUST BE OERATED LINEARLY
WITH INCREASE IN TEMPERATURE I ,. .~~~ ~~
•.. , . .. 10
01 OR Q9 COLLECTOR-lO-EMITTER VOLTAGE-II
,I . ..10 100
. ,.' IO~ 10'"
FREQUENCy HI-Hz
10'
IIII'~J
JLU r
,.'
:~
'2eS-22505
. Fig. ;4 - Maximum operating area for Fig. 15 -- Output power as a function of sup· Fig. 16 - Typical open·loop voltage gain vs.
HC2500. ply voltage, with various values of frequency for HC2500.
load resistance, for symmetrical sine-
wave operation for HC2500•
•• LDAD RDISTANCE (ilL". A
HH-++k-1H-+tH::."r ==1':;::::'.' y
- '50 I--H-+tt-Hrttt-Hrttt-H-+tHH+fl
'.' .•' 10 4 10·
fREQUENCY In-HI
,.'
.• 10 1 lOS 10" 10~ 10"
OUTPuT IDLING CURRENT (I,l-IIIA
FREQUENCY tn-Hz I2.CS-2Z504
Fig. 17 - Typical open·loop phase shift vs. Fig. 18 - Bias resistor value vs. output idling Fig. 19 - Output power vs. frequency for
frequency for HC2500. current IIi' for HC2500. HC2500.
10, SUPPLY VOLTAGE IVs).:t37.~ V
0.01 2 "6 '0.1 2 '" S. I 2 "'. 8'0 Z '" 6 '100 2 411 2 411 2 461
0.01 0.1 I 10 100 RMS OUTPut VOLTAGE (Vo)- V
RMS OUTPUT POWER 1Pol-. RMS OUTPUT POWER-W
Fig. 20 - Typical intermodulation distortion Fig. 21 - Typical harmonic distortion vs. rms
vs. rms output power for HC2500. output power for HC2500. Fig. 22 - Input sensitivity for HC2500.
IJi III
HI ill!
,1 il!!
11 II
d
100 200 300 400 $00 600 700
11
CASE TEMPERATURE ITCI-"C COMPENSATION CAPACITANCE tCc)-pF
Fig. 23 - Typical idling·current drift for Fig. 24 -. TVpical slew rate vs. value of com·
HC2500. pensation capacitor Cc for HC2500.
__________________________________________________ ~ ____________________ 539

540--------------------------------------_______________________________
Triacs
Technical Data
____________ ~ _ _ _ 541
TRIACS
T2300, T2301, T2302, T2310, T2311, T2312 Series
2.5-A Sensitive-Gate Silicon Triacs Features:

• Very high gate sensitivity- 3,4, and 10 mA
Mod. TO-5 and Mod. TO-5 with Heat Radiator Packages For AC Power Switching • di/dt capability-lOa A//ls
• Shorted-emitter, center-gate design
The RCA-T2300, T2301, T2302, T2310, same as the T2300, T2301, and T2302 series, • Low switching losses
T2311, T2312 series triacs are gate-controlled respectively, but have factory·attached heat • Low on-state voltage at high current levels
full-wave silicon ac switches that are de· radiators and are intended for"printed-circuit- TERMINAL CONNECTIONS
signed to switch from an off-state to an on- board applications.
state for either polarity of applied voltage The gate sensitivity of these triacs permits
with positive or negative gate triggering the use of economical transistorized control
voltages. circuits and enhances their use in low·power
The T2310, T2311, and T2312 series are the phase·control and load·switching applications.
MAXIMUM RATINGS, Absolute-Maximum Values: T2300

For Operation with Sinusoidal Supply Voltage at Frequencies T2301
Up to 50/60 Hz and with Resistive or Inductive Load T2302
Series
3 rnA Gate T2300F T2300A T23008 T23000
4 rnA Gate T2301F T2301A T23018 T23010 Modified TO-5
ID
10 rnA Gate T2302F T2302A T23028 T23020 (See dlmens/onel outline "F"_)
3 mAGate T2310F T2310A T23108 T23100
4mA Gate T2311F T2311A T23118 T23110 MT2 RJlrt&t
10 rnA Gate T2312F T2312A T23128 T23120
V OROM•
o 0
Gate open, T J=-40 to 1000 C ...........•.. 50 100 200 400 v A0 0 2
'T(RMS) (e = 360 0 ): ~NG
T C = 700 C (T2300 Series) ................. - - - -_ _ 2.5 A GATE 0 0
TA =25 0 C (T2310Series) ................. - _ _ _ _ _ 1.9 - _ _ _ __ A
MT
For other conditions ...................... - _ _ _ See Figs. 2,3,4,5 _ _ __ ucs·nns
T2310
' TSM :
For one cycle of applied principal voltage, T2311
at current and temperature shown T2312
Series
above for 'T(RMS):
60 Hz (sinusoidall ...................... _ _ _ _ _ _ _ 25 _ _ _ _ __ A Mod. TO-5 with Heat Radiator
50 Hz (sinusoidall . . . . . . . . . . . . . . . . . . . . . . 21 _ _ _ _ __ A (See dlmens/onel outline "0"_)
For more than one cycle of applied
principal voltage .....•.................... - - - - - 5 e e Figs. 6,7 ____
di/dt:
Vo = VOROM,IGT ~?O rnA,
tr~O.ll's .........•......... _ _ _ _ _ _ _ 100 - _ _ _ __ AIl's
12t (At T C s~own for 'T(RMS)J :
_ _ _ _ _ _ 4.3 _ _ _ __
t~20rns .•...•....•.•..•...•.••........ _ _ _ _ _ _ 2 _ _ _ __
~2.5 rns .•...•.....•.•.......•..•.....•
~ 0.5 rns .•...•..•............•.•.•..••. 1
For other time values ......••...•......... _ _ _ _ See Fig. 7
'GTM":
For 11ls max .........••..•.•.•••........ A
PGM :
Peak (For 1 IJs max.,
_ _ _ _ _ _ 10 _ _ _ __
'GTM .;; 1 A(peak) ...•.......•.......... w
PG(AV): _ _ _ _ _ _ 0.15 _ _ _ __
TC ~ 600 C •..............................
_ _ _ _ _ 0.05 _ _ _ __ 1'Ul.L-t'W'CLE flM$ ON-STATE CURRENT IT(RMS)-A
TA ~25oC ............................. .
Tstg- ....•....•......••................... ________ -40 to 150 Fig. 1-Power dissipation VS. on-state current.
TC" ..................................... . 40 to 100
E\J.r",-
aMRENT WAVEFORM: SINUSOIDAL
TT": I.C)AD:IE$ISTIVE OR INDUCTIVE
COM)UCTION ANGLE 111:360-
During soldering for 10 s maximum CASE TEIilFERATURt ITcJ:M£ASUflED
AS SHOWN ON DIMENSIONAL OUTLINE
at distance;;' 1116 in. (1.58 rnnil from seating plane _ _ _-'-__ 225 _ _ _ _ __ ,~
V
• For either polarity of main terminal 2 voltage (V MT2 ) with reference to main terminal 1. W~ ., ,"
• For either polarity of gate voltage (V G ) with reference to main terminal 1.
• For temperat~re measurement reference paint, see Dimensional Outlines.
F':::~ ..
ii ..
i~
FULL-t'l'tL£ RMS ON-STATE CURRENT [ITIRMS)]-A
Fig. 2-Maximum allowable case temperature vs_

on-state curren t.
542 _____________________________________________________________________
TRIACS
T2300, T2301, T2302, T2310, T2311, T2312 Series

At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (TCI
LIMITS
FOR ALL TYPES
Except as Specified
Min. Typ. Max.
10ROM"':
Gate open, TJ=100 o C, VOROM=Max.rated value - 0.2 0.75 mA
VTM : '"
iT=10 Alpeakl, Tc=25 0 C - 1.7 2.2 V
IHO"': (See Figs. 9 & 10)
Gate open, Initial principal current=150 mA (del, FULL-CYCLERMS ON-STATE CURRENT (ITIRMS1]-A
vO=12 V, TC=25 0 C
Fig. 3-Maximum allowable ambient temperature
(T2300, T2:;01, T231O, T2311 seriesl - 2 5
mA vs. on·state current for T2310, T2311,
IT2302, T2312 seriesl - 7 15 T2312 series.
dv/dt IComniutatingl"':
vO=VOROM' ITIRMSI<' 5 A, com mutating di/dt=1.33 Alms, CURRENT WAVEFORM ~ SINIJSOIOAL
gate unenergized, TC=70·C 0.5 - -- V I!'s LOAD: RESISTlV£ OR INDlCTlV[
CONDUCTION ANGLE (8):360·
'DiltCl(vaSOUl(I'I£D
dv/dt 10ff·state I": 01'1 1'...·.1'H(j( COPPE~
HUT 51f11I(.TEfIIII£R·
ATUII~ MUSlIMO 01'1
vO=VOROM, exponential voltage rise, gate opell, H[,I,T SH( 114' FAOM
CA5(UoP.
Tc= 900C IT2300, T2301, T2310, T2311 series I 3 5 - lEAOlEPoKiT"'I"
V/!'s
Tc=100 o C IT2302, T2312seriesl 6 10 - MOUNTING
®
IGT"·: (See Figs. 13 & 14) FOR Cl(VICE SOL..CI:II(D
OI'II,,,'~THI:K~~
vO=12V dc, R L=30 n, Tc=25 0 C ~U/rlTING ,,[,I,T5_. TEMPE"~

,I,TI,III( ME,I,SVRED ON
±if:l@ HEATSINl(I~F~OIII
Mode VMT2 VG CASE CAP.

l£,I,DLEPoKiT"'I"
1+ positive positive I I.~ 3
FULL-C'I'CLE RMS ON-STATE CURRENT [1T(R"'Sl]-A

T2300, T2310 series .. 1 3
T2301, T2311 series - 1 4
Fig. 4-Maximum allowable heat-sink temperature
T2302, T2312 series - 3.5 10 vs. on·state current for T2300, T2301,
111- negative negative T2302 series.
T2300, T2310 series - 1 3
T2301, T2311 series - 1 4
T2302. T231 2 series - 3.5 10
mA
1- positive negative
T2300, T2310 series - 2 3
T2301, T231 1 series - 2 4
T2302, T231 2 series -- 7 10
111+ negative positive
T2300, T231 0 series - 2 3
T2301, T231 1 series - 2 4
VGT
.... T2302, T2312 series
(See Fig. 15)
- 7 10
vO= 12 V dc, R L=30 n, T c=25 0 C - 1 2.2 Fig. 5-Maximum allowable ambient temperature
V
vO=VOROM, RL = 3 kn , T c=100 0 C 0.15 - - vs. on-state current for T2302 series.
tgt'
vO=VOROrvl, IGr60 mA, tr=O.l !,S, iT=10 Alpeakl, SUPPLY fREQUENCY'!>O/60 Hz
- ~DO~~~~~W~URRENT [1TIR"'SI]'2 !>~;H--t--t--j-t1

T c=25 0 C 1.B 2.5 !,S CASE TEMPERATURE (Tel < 1O"C
ROJC' GATE CONTROL MAY BE LOST DURING AND-

Steady·state - - B.5 :~~~~TLELY FOLLOWING SURG£ CURRENT _
RO JA :
°c/w OvERLOAD MAY NOT BE REPEATED UNTIL
JUNCTION TEMPERATURE HAS RETURNED TO
snADY-STAn RATED VALUE
(T2300 Series) - - 150

(T2310 Series) - - 30
50HZ~
.. For either polarity of main terminal 2 voltage (V MT2 ) with reference to rlain terminal 1.
• For either polarity of gate vultage (V G) with reference to main terminal 1.

10 6 910~
SURGE CURRENT DURATION-FULL CYCLES
Fig. 6-Peak surge on-state current vs.

surge-current duration.
_______________________________________________________________________ 543
TRIACS ____________________________________________________________________
T2300, T2301, T2302, T2310, T2311, T2312 Series

CASE T£MPERATURE(Tc)oZS"C
TIME (I)-1M POSITIVE Of! NEGATIVE It.lSTANTAN£OUS OM-STATE VOLTAGE Ivrl-V CASE TEMPERATURE ITCI--C
Fig. 9-0C holding current (positive or negative)

Fig. 7-Peak surge on-state current and Fig. 8-0n-state current VS. on-state voltage vs. case temperature for T2300, T2301,
fusing current VS. time. for all standard series. T2310, T2311 series.
I"""'·"""'"
II II,
II: ·'F'Y:::
11 III
Uti
U'·
I"'K:I,IU\II·
II':?;"·:II:::
Ii III'
rN.';::'iJ'r::
"II .•
CASE TEMPERATURE (Tcl-"C POSITIVE OR NEGATIVE GATE-TRIGGER CURRENT (IGTI-mA POSITIVE OR NEGATIVE GATE-TRIGGER CURRENT{IGT)-mA
Fig. 7O-0C holding current (positive or negative)

VS. case temperature for T2302, Fig. 11-Gate-trigger voltage vs. gate-trigger current Fig. 12-Gate-trigger voltage vs. gate·triggercurrent
T2312 series. for T2300, T2301, T2310, T2311 series. for T2302, T2312 series.
PRINCIPAL DC VOlTAGE'12V
LOAD'JOn, RESISTIVE
--- ............... -
TRIGGERING MOO£S ALL
:HS.:· ............ .
, FFPFFFF::::t::"'..t.~..t ..~.t..~..t.:':t:':t3
~ ::~: •
4 --_. .._ ._._
, "
CASE TEMPERATURE 1Tc)-'C
-}O -10
CASE TEMPERATURE (TC)-·C
CASE TEMPERATURE (TC)~·C
Fig. 13-Gate-triggercurrent vs. case temperature Fig_ 14-Gate·trigger current vs. case temperature Fig. 15-Gate-trigger voltage vs. case temperature.
for T2300, T2301. for T2302, T2312 series.
544 __________________________________________________________________________
____________________________________________________________________ TRIACS
T2303 (2N5754-2N5757), T2313 Series

2.5-A Silicon Triacs Features:
• Gate sensitivity -25 mA
Modified TO-5 and Modified TO-5 with Heat Radiator Packages • dildt capability -100 Alps
For AC power Switching Applications • Shorted-emitter, center-gate design
• Low switching losses
The RCA-T2303 and T2313 series triacs The T2303 12N5754-57) series types em- • Low-an-state voltage at high current
are gate-controlled full-wave silicon ac ploy a hermetic modified TO·5 package. levels
switches that are designed to switch from The T2313 series types employ a hermetic TERMINAL CONNECTIONS
an off-state to an on-state for either modified TO-5 with a factory-attached
polarity of applied voltage with positive heat radiator packege.
or negative gate-triggering voltages.

For opet1ltiOIJ with sinusokMl supply WJltagtt st frequencit:s up to 50/60 Hz and with resistive at'inductillfllOlld
T2303F 2N5754 2N5755 2N5756 2N5757
BOTTOM VIEW
T2313F T2313A T2313B T2313D T2313M
'VOROMA:
Gate open, TJ " -6510 lOtte 50 100 200 400 600 v T2303 (2N5154-571 Series
ITIRMSlfO .. 3600CI:
• TC .. 7a D e IT2303 series) • • • • • • • • • • • • • • • • • • 2.S (See dlmenllonal oulline "P'.)
TA = 2So C (T2313seriesl •..•...•••.••..•••
ID
1.9
For other conditions • . . . . . • . • . • . • . See Figs. 2.3,4
ITSM:
For IMe cycle 01 applied principal voltage. at current
and temperature shown above for ITIRMSI: MT2 RAbWf.J;R
60 Hz !sinusoidal) • • • . . • . . • • . • . . _ .. _ •... 25 A
50 Hz (sinusoidal) •.•••••.••.•.••••••.•..
FOf' more than one cycle of applied principal voltage ..••• "
See Figs. 5,6
o 0
diJdt:
A0 0 2
12~~~ ~g~h~: ~~:I;::M':i :tr .. a.11t1 .....•..... 100
.
MOLWTING
1lIBS
1-20ms . . . . . . • . . • . . . . . . . . . . . . . . . . . . • • . 4.3 GATE 0 0
t=2.5"" •••••..•.••••••..•.••.•••••. 2
t .. a.5ms •••.••.••.••••••.•..•••••.•..
MT
FIlt01hertimevaluei • • • • • • • . • . . . • . • • . • • . . . • See Fig. 6 ncs·I:T7IS
BOTTOM VIEW
·, GTM-
For 1 III millx. (See Fig. 9) . . • . • • • • . • . • . . • • • • • . . A T2313 Series
PGM :
Puk (For 1 III max., 'GTM" I A (peakl, (See Fig. 91 ..•.• 10 w
:::::VI~~~.:.~.~~::::::::::::::::::::::::
-TC• . . . • • • . . . . . . . . " . , ....• , .•......
: 0.15
0.05
-65 to 150
-65 to 100
w
w
·c
·c
(See dimensional outline "G".)
TT-= •. , •• , •••..••
During soldering for IDs maximum al disl4Ince;> 1/16 in.
11.58 mml from seating plane •..••.•• , ••..•. 225 ·c
.
CURRENT WAVEFOfIM:SINUSOIDAL.
LOAD 'RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE (11:360-
CASE TEMPERATURE ITcl:MUSURED
AS SHOWN ON DIMENSIONAL OUTLINE
I
~
I 2
.. ,
;-
d. ,~
I Z , " FULL-CYCLE RMS ON-STATE CURRENT [ITIRMSI]-A
FULL-CYCLE: RIllS ON-STAT[ CURRENT [ItIRMSI] -'" "CS'I~114'" FULL-CYCLE RMSON-STATE CURRENT [ITtlUISI]-A 92LS-I588115
Fig. 1 - Power dissipation vs. on·state current. Fig. 2 - Maximum allowable case temperature Fig. 3 - Maximum allowable ambient tem-
VS. on·state curren t. perature vs. on-state current.
C1ItftENT w.wEFOfIM: SNJSOIl&L
LOAD: RESISTIVE OR INDUCTIVE
CONDUCTION "'NGLCI,):360-
• s;rp-'"
;:~:.s::
"""I
. AT Te SHOWN ~ ITIRMSI
II I I I
I.~
..AT .... TIE ..... -

..nM1 ....~ON
"AT_v4',..
GATE CONTROL MAY BE LOST DURING AND -
:r~~:'TLE.LY FOI..LOWING StJRGE CURRENT _
~i
~1
4
l.~\ 1 ,,~
w
~
>-
~.
.
r~
~J
CASlCN'. 2
~rr::1
LEADLEJGTN°I- OVERLOAD MAY NOT BE REPEATfO UNTIL w!:!
..... NCTION TEMPERATURE HAS RETUFINEO TO ~!E
MOUNTINCO ~ ....llL . STEADY-STATE RATED VALUE.
~~JOO ,........,>< .,. I ~!:!
® ~ qt' WZ
... """" ....... ;:;~

ru
8
•
""""':t.'oCU«
.... ~ ~~
.0a~ ,
ON VII'-1lICKCD'I'ElI
HUT SNC. TIE ....,,-
-------- [ - - [--, ~~
11b-
ATUfIf_ASIM£OC* ~~
ICATSNev4'FIIOM w'
~a.
CAS( u.~. .~
LEAD l[fGTHol" 2
FULL-CYCLE RMS ON-STATE ctJRRENT [ITIRMSI]-A il2L5-1390115 10 4 6 8102

SURGE ClMR[NT OI.MATICN-I'ULL CYCLES
4 6 8 10, 10
2 , .. 2
TIME 1ti-1II1
, ..I '0
2 ,
0.01
Fig. 4 - Maximum allowable heat-sink tem- Fig. 5 - Peak surge on·state current vs. surge- Fig. 6 - Peak surge on-state current and
perature VS. on-state current. current duration. fusing current VS. time,
545
TRIACS
T2303 (2N5754-2N5757) T2313 Series
ELECTRICAL CHARACTERISTICS, At Maxtmum Ratings Unless Otherwise Specified and at Indicated Case Temperatu'" (TCl
LIMITS
For All Type.
CHARACTERISTICS Except I. Specified UNITS
MIN. TYP. MAX.
• IOROM":
Gate open, TJ = 100"C, V OROM = Max. rated value . . . . . . . . . . . . . . . . . 0.2 0.75 mA
VTM~: (See Fig. 7)
iT = 10 A (peak), TC= 25·C .............................. . 2.2 2.6
V
.iT = 3.5 A (peak), TC = 25·C .............................. . 1.8
IHO"': (Se~ Fig. 8)
Gate open. Initial principal current = 150 mA (de), vo = 12 V
TC = 25·C ........................................ . 6 35
mA
= -65~C ......... : ............................... . 20 82·
dv/dt (Com mutating) ... :
Vo = V DROM' IT(RMS) = 2.5 A commutating di/dt = 1.33 Alms,
gate unenergized, TC = 70·C .............................. . 0.5 V/p.s
• dv/dt (Off·State)"':
vo = VORO;'-Vexponential voltage rise, gate open, TC = 100·C: ........ . 10 100 V/p.s
IGT ...·: (See Fig. 10)
vo = 12 V de. AL =30n. TC =25·C
Mode VMT2 VG
1+ positive positive . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 25
I,,- negative negative . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 25
1-'- positive negative. . . . . . . . . . . . . . .. . ............ . 10 40
I ,,+ negative positive . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 40
vo = 12 V de. RL = 3On. TC = -65·C mA
Mode VMT2 VG
positive positive . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 60·
negative negative . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 60·
positive negative . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 100·
negative positive ........................... . 40 100·
VGT .... : (See Fig. 11)
vO=12Vdc.RL=30n.TC=25·C • . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 2.2
= -65·C .......................... . 1.5 3·
V
vD = VOROM. RL = 125n. TC = 100·C . . . . . . . . . . . . . . . . . . . . . . . . . 0.2
tgt:
vo = VOROM' IGT = 60 mAo tr = O.Ip.s, iT = 10 A (peak) TC = 25·C 1.8 2.5 p.s
• RSJC:
Steady·State 8.5
RSJA:
·CIW
Steady·State T2303 Series . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . 150
!-:-_ _.,-_..,-!-T2~3~10!-.3~
SeJ.!llrie~s ..•.• , ...•..•.....•••...•.....•.. 30
• In accordance with JEOEC registration data format (JS·14. ROF·2- filed for the JEOEC (2N-5eries) types.
" ·For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
• For either polarity of gate voltage (V G) with reference to main terminal 1.
M8 __________~----------------~-------------------------------
TRIACS
T2303 (2N5754-2N5757), T2313 Series

• TRIGGERING MODES: ALL
" ~~~r;,o ~:'~~~CA::;"::S-+-+++_t7.C-!--hlH
TRIGGERING POINTS
I .2 :s
I"O$ITI't£ Oft N[GATIVE IHSrANf.lM[OJS
ON- STAn: \A)LTAGE (wTI-V
Fig. 7 - On~state current VS. on-state voltage. Fig. 8 - DC holding current (positive or
negative) vs. case temperature. Fig. 9 - Gate-trigger characteristics and
limiting conditions for determination
of permissible gate-trigger pulses.
Fig. 10 - DC gate-trigger current VS. case tem- Fig. 11 - DC gate-trigger voltage vs. case tem-
perature. perature.
547
TRIACS ____________________________________________________________________
T2304, T2305 Series

400-Hz, O.S-A Sensitive-Gate Silicon Triacs
For Control·Systems Application in Airborne and Ground·Support Type Equipment
RCA T2304- and T2305-series triaes are gate-controlled and 208 V AMS sine wave and repetitive peak off-stage
full-wave silicon ae switches. They are designed to switch voltages of 200 V and 400 V.
Features:
from an off·state to an on-state for either polarity of applied • High gate sensitivity, IGT:::: 10/40 mA max.
voltage with positive Of negative gate triggering voltages. • di/dt capability :: 100 AlJJs
The high gate sensitivitY of these triaes permits the use of
• Commutating dv/dt capability
economical transistorized or integrated control circuits and characterized at 400 Hz
These triaes are intended for operation up to 400 Hz with enhances their use in low-power phase control and load- • Shorted-Emitter Design
resistive or inductive loads and nominal line voltages of 115 switching applications.

For Operation with Sinusoidal Supply Voltage at Frequencies up to 400 Hz and with Resisl;veor Inductive Load.
T2304B T2304D
T23058 T2305D
REPETITIVE PEAK OFF·STATE VOLTAGE:*
Gate open, TJ" -50 to 100 0 (' ••• VOR0M 200 400 V
RMS ON-STATE CURRENT (Conduction angle'" 360 0 ): 'nRMS)
Case temperature fTC):: (jOoC .................. . 0.' A
Ambient temperature fT A) :: 25OC. without heat sink. 0.4 A
For other conditions See Figs. 2 & 3
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: ITSM
For one cycle of applied principal voltage, Te '" 90°C
400 Hz !sinusoidal) ......................... . '0 A
60 Hz (sinusoidal) ........................... . ............. . 21 A
50 Hz (sinusoidal) I ..... ,., ......... , ............... , ....•... 21 A
For more than one cycle of applied principal voltage See Fig. 4
RATE-OF-CHANGE OF ON-STATE CURRENT: di/dt
VDM :0 VDP.OM. IGT '" 60 rnA, tr '" 0.1 ~s 100 Aills
FUSING CURRENl (for triac protection) Modified JEOEC TO-5
TJ ::: -50 to 100 C, t '" 1.25 to to ms I~t A2,
P~~~P£l~1!i;Jx~IC~!'fii'R~fN~:.·.... 'GTM
(See dimensional outline "F.")
CATE POWER DISSIPATION:
PEAK (For I £IS max .• (See Fig. 10) PGM , 10 w
AVERAGE (At TC '" 60OC) ......•...... , ....•... , .... PC(AV) 0.15 w
(At T A'" 250(', without heat sink) ...... , ......... . PC(AV) 0,05 w
TEMPERATURE RANGE:'"
Storage ...... . Tslg -5010150 oe
Operating (Case) Te -50 to 100 oe
LEADTEMPERAfURE (During soldering):
At distances~ 1/16 in. (1.58 mm) from the case for to s max. ........\. Tc 22l oe
• For either polarity ofmain terminal 2 voltage (VMT2) with reference to main tenninall.
• For either polarity of gate voltage (VC) with reference to main tenninal I .
... For temperature measurement reference point, see Dimensional Oudine.
At Maximum Ratings and at Indicated G.!se Temperature (T C) Unless Otherwise Specified
liMITS
T2304 Series T2305 Series
Min. Typ. Max. Min. Typ. Max,

Pull Off-S.... Current:' IDROM
Gate open, TJ:t tooOe, VOROM '" Max. rated value 0.2 FULL CYCLE RMS ON-STATE CURRENT [lTIIIIII:Us:I~cm!
0.75 0.2 0.75 mA
Maximum On-Stlte Voltage:'
VTM
For iT" 10 A (peak). TC" 25°C ... 1.7 2.2 1.1 2.2 V Fig. 1-Power dissipation vs. on-state current.
DC Holding Current:'
Gate open. Initial principal current .. 150 mA (DC). vO '" 12 v.
'HO 15 15 30 mA
For other case temperatures· . , ..... ' ..... ..---SeeFi .8&9~
CritiCilI R..e-of-Rise of Commutation Volt.ge:'
For vo" VOROM. '(TIRMS) '" 0.5 A. commutating
di/dt'" 1.B Alms. gate unenergized. TC '" 900C dv/dt VI",
Critlal Rat.of-Ri.. of Off-Stage Voltage:'

For vo • VoROM. exponentail voltage rise. gate open, dv/dt
TC·100 0 C 10 100 10 100 VI",
DC Gate- Tri.... Currlnt:1 Mod. VMT2 VG
ForvO -12 V (DC), positive positive 3.5 10 25
Rl -30 n m· " negative negative 'GT 3.5 '0 25
mA
T C "" 25°C r positive negative '0 '0 40
m+ negative positive 10 10 40
For other case temp8f'atures See Figs, 11 &: 1 2 - - + -
DC Gate- Tri.,. Voftage:lt
ForvO'" 12V (OCI. Rl =30n. TC= 2SoC 1,1 2 21\1,122
For other case tempera1\lres ~ See Fig. 13-----" v F'ULL CYCLE RMS ON-STATE CURRENT [lTIMllSI]-A
Forvo:lt VOAOM. RL '" 125n. TC '" 100°C 0.15 0.15 !lI2CS-lto"
Glt.ControHMi Tum·On Time:

loelay Time + Rise Timel
Fig. 2-Maximum allowable case temperature
For vo '" VoROM. IGT '" 60 mAo tr '" 0.1 fJS,
iT" 10 A (peak). TC '" 250C (See Fig. 16) l.8 2.5 1.8 2.5 VS. on-state curren t.
8.5 8.5 oe/W

• For either polarity of maIO terminal 2 voltage (VMT2) With reference to maIO terminal 1.
t For either polarity of gate voltage (V G) with reference to main terminal 1.
548 _____________________________________________________________________
TRIACS
T2304, T2305 Series

I
I~
a..",
TRIAC WITH HEAT RADIATOA
TRIAC WITHOUT HEAT RAOIATOR6
I~. PRINTED-CIRCUIT BOARD MOUNTE
llIlAC WITHOUT HEAT RADIATOR
'W'VEO 0.. " ..." ' ' ' ' '
~&> ~~~m ~Lr'.'~ !"'"
ag
o 180·,
C(lHDUCTIOH ANGLE
"8r. + 8.
360-
SUPPLY FREQUENCY*60/400 Hz
LOAD: RESISTIVE
RMS ON-STATE CURRENT[ IT(R"Slj'O,5A
CASE TEMPERATURE(Te l*90"C
III I I II
I!l I"~: w!:!0_3

E~
~~0.2
0'
10 2 .. 6 8 102 2 0,8 09 I 1.1 1.2

ON-STATE VOLTAGE I VT) - v
SURGE CURRENT DURATION-FULL CYCLES (POSITIVE OR NEGATIVE)
fULL. CYCLE RMS QH-STATE CURRENT [[TIA.5J j-A 92C$-110'J4
Fig. 3-Maximum allowable ambient temper-

ature vs. on-state current for the Fig. 4-Peak surge on-state current vs. Fig_ 5-0n-state current vs_ on-state
package/mounting options of surge-current duration. voltage (steady-state condition)_
these triaes.
CASE TEMPERATURE (Te '· 25"C I ""'AL ON-STAU CURREN~
INSTANTANEOUS ON-STATE VOLTAGE (YTI-V , -50-040-30-20-100 102030

(POSITIVE OR NEGATIVE) CASE TtMPERATURE lTe 1 _·c CASE TEMPERATURE (Tel--C
Fig. 6-0n-state current VS. on-state Fig_ 7-DC holding current vs. case Fig. 8-DC holding current vs. case
voltage (surge condition). temperature for T2304 series_ temperature for T2305 series_
'00,
& TRIGGERING MODES: ALL
.. ~~~~~s~~ :SES~~~~ICA.C';="'-"H+l~-ff---'-+tH
TRIGGERING POINTS
CASE TEMPERATURE (Tel-'C
000' Fig. IO-DC gate-trigger current vs. Fig. II-DC gate-trigger current vs.
case temperature for T2304 case temperature for T2305
Fig. 9-Gate-trigger characteristics and series. series.
limiting conditions for deter~
miilation of permissible gate-
trigger pulses.
-50 -4(1 I
CASE TEMPERATURE (Tel-"C
Fig. 12-DC gate-trigger voltage vs.

case temperature _
________________________________________________________________________ 549
TRIACS ______________________________________________________________ ~--
T2320, T2322, T2323, T2327 Series

Features:
2.S-A Sensitive-Gate Silicon Triacs
• Very high gate sensitivity-3,5 and 10 mA
For AC Power Switching • di/dt capability-100 A/JJ.s
• Shorted·emitter, center-gate design
The RCA-T2320, T2322, T2323 and T2327, The gate sensitivity of these triacs permits
the use of economical transistorized or • Low on·state voltage at high current levels
series triacs are gate- controlled full-wave
integrated circuit control circuits and en- • Glass-passivated chip for stability
silicon ac switches that are designed to
hances their use in low-power phase-control • Package and formed-lead options available
switch from an off-state to an on-state
for either polarity of applied voltage with and load-switching applications.
positive or negative gate triggering voltages_ All types in each series utilize the JEDEC-TO-
202AB (RCA VERSATAB) plastic package. TERMINAL CONNECTIONS

For Operation with Sinusoidal Supply Voltage at Frequencies Up to 50/60 Hz
[ffffi:
and with Resistive or Inductive Load
3 mA Gat. T2320F T2320A T2320B T2320C T2320D T2320E
10 mA Gat. T2322F T2322A T2322B T2322C T2322D T2322E
V DROM "
Gate open, T J=-40 to lOOoe .
25 mA
5 mA
Gat.
Gat.
T2323F
T2327F
50
T2323A
T2327A
100
T2323B
T2327B
200
T2323C
T2327C
300
T2323D
T2327D
400
T2323E
T2327E
500 V
TOP VIEW Fir TERM 3 2 ,
'TIRMS) (0= 360°): 92CS-34149
i~ : ~~~g. ::::::::::::::::::::::: 2.5

0.8
A
A JEDEC TO·202AB
For. other conditions See Figs. 3 and 4 ITvp. 1 Package)
'TSM: (See dimensional outline "P".)
For one full cycle of applied principal
voltage, at current and temperature
shown above fo, 'TIRMS): - _ _ _ _ _ _ 25 _ _ _ _ __ '1
60 Hz (sinusoidal) .............. . A
_ _ _ _ _ _ _ 23.5 _ _ _ _ _ __
50 Hz (sinusoidal, .............. . A
principal voltage ......... . _ _ _ _ _ _ _ _ See Fig.5 _ _ _ _ _ __
-v-:~~d.==f'==~=:!:=---+v
di/dt:
Vo =V OROM "GT=50 rnA.
t, = 0.1 "s ISee Fig. 10)............. . - _ _ _ _ _ _ _ 100 _ _ _ _ _ _ _ A/"s
,2t (At T e shown for 'TIRMS) ) IHaif-sine wave):
t = 20 ms ........ .
3.4 _ _ _ _ _ __
1.7 _ _ _ _ _ __ A2s
= 2.5 ms ....... . A2 s
0.5 ms ....... . - -_ _ _ _ _ 1
A 2s
For other time values .............. . Fig. 1 - Principal voltage-current characteristic.
See Fig.6
'GTM·:
For 1 ps max ..................... . A
PGM :
Peak (For 1 IlS max.,
'GTM .;; 1 Alpeak) ................ . 10 w
PGIAV ):
_ _ _ _ _ _ _ 0.1 _ _ _ _ _ __
;~: ~~~~ ::::::::::::::::::::::: _ _ _ _ _ _ _ 0.05
_ _ _ _ _ _ -40 to 150 _ _ _ _ __
;~j" :::::::::::::::::::::::::::::: 40 to 100 _____________
TT":
During soldering for lOs maximum at distance
~ 1/16 in. 0.58 mm) from seating plane :125
• For either polarity of main terminal 2 voltage (V MT2 ) with reference to main terminal 1.
• For ~ither polarity of gate voltage (V G' with reference to main terminal 1 .
• For termperature measurement reference point, see Dimensional Outlines.
rULL-CYCLE RMS ON-STATE CURRENT [ITCRMSl]-A
Fig. 2 - Power dissipation as a function of on-state

current.
550--___________________________________________________________________
TRIACS
T2320, T2322, T2323, T2327 Series

At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature ITcl
LIMITS
FOR ALL TYPES
Except as Specified
Min. Typ. Max.
IOROM"':
Gate open, TJ = 100oe, VOROM = Max. rated value - 0.2 0.75 mA
VTM"':
iT = 10 A(peak), T e =25 0 e T2320, T2322, T2327 serie - 1.7 2.2 V
iT = 10 A(peak), T e =25 0 e T2323 series - 1.7 2.6
IHO&: Fig. 3 - Maximum allowable temperature as a
Gate open, Initial principal current =150 mA (dc), a function of on-state cu"ent for
vo = 12 V, T e = 25 0 e - 15 30 mA T2320, T2322, and T2327.
dv/dt (eommutatingl"';
vO =VOROM, IT(RMS) =2.5 A, commutating di/dt =
1.33 Alms, gate unenergized, T e = gOoe 1 4 - V//ls
dv/dt (Off·state)&;
vo = VOROM, exponential voltage rise, gate open,
Te = 1000 e 10 100 -
IGT...·: (See Fig. 8)

vo = 12 V dc, R L = 30 n, T e = 25 0 e
Mode VMT2 VG
1+ positive positive
T2320 series - - 3 FULL-CYCL.E RMS ON-STATE CURRENT [ITIRMSI]-A
T2322 series - - 10 Fig. 4 - Maximum allowable tempfJrature as
\121;5-2,17:\
T2323 series - - 25 a function of on-state current

T2327 series - - 5 for T2323.
111- negative negative SUPPLY FREQUENCY .~/60 Hz
T2320 series - - 3 ~~D~~SJ~I~~E CURRENT [ITIRMSI] 02.5A-I---++H
T2322 series - - 10 CASE TEMPERATURE ITC}·70-C
I I I , I I II
GATE CONTROL MAY BE lOST DURING ANO
T2323 series - - 25 i 2, l:~~~~LELY FOLLOWING SURGE CURRENT
T2327 series - - 5 ~ OVERLOAD MAY NOT BE REPEATED UNTIL
mA ~ 201--""1---1- f~~sfi~r::;EUJl~tui,RETURNED TO
1-
positive negative
T2320 series - - 3
T2322 series - - 10
T2323 series - - 40
T2327 series - - 5 , -

T2320 series - - 3
T2322 series - - 10
T2323 series - - 40 Fig. 5 - Peak surge on-state current as a function
T2327 series - - 5 of surge-current dUration.
VGT...·; (See Fig. 9)

,-H+--I----JaiO
vo = 12 V dc, R L =30 n, T e = 25 0 e ~ 1 2.2
V
vo = VOROM, RL = 125 n, Te = 1000e 0.15 - -
tgt'
Vo =VOROM, IGT =60 mA, tr =0.1 /lS,
iT = 10 A(peak). Te = 25 0 e - 1.8 2.5 /lS
ROJe (Package Types 1, 11, 12,3,32) - - 8

ROJA (Package Types 1, 11, 12, 3, 32) - - 80
ROJL (Package Types 2, 21) - - 50
°elW
ROJA (Package Types 2, 21) - - 100 001
.. For either polarity of main terminal 2 voltage (YMT2) with reference to main terminal 1 .
• For either polarity of gate voltage (V G) with reference to main terminal 1.
Fig. 6 - Peak surge on·state current and fusing
current as a function of time.
________________________________________________________________________ 551
TRIACS __________________________________________________________________
T2320, T2322, T2323, T2327 Series

4 PRINCIPAL DC VOLTAGE "12V
LOAO·;,o Q, RESISTIVE
NORMALIZED TO THE ~·c VALUE
I- MODE
-50 -25 0 50 75 100 50 -25 0 25 50 ~ 100

" " 20
POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE
CURRENT (iTI-A
CASE TEMPERATURE (TC)-'"C CASE TEMPERATURE (Tcl-·C
Fig. 7 - On-state cu.rrent as a function of on-state Fig. 8 - Gate-trigger current as a function of case Fig. 9 .,.... Gate trigger voltage as a function of case
voltage. temperature. temperature.
552
TRIACS
T2500 Series
6-A Silicon Triacs Features:
• 6Q.A Peak Surge Full·Cycle Current Ratings
• Shorted·Emitter. Center·Gate Design
Three·Lead Plastic Types for Power·Control and Power·Switching Applications
• Package Dasign Facilitates Mounting on a Printed·Circuit Board
• Low Switching Losses
Types T2500B and T25000· are gate-controlled full,waY8 negative gate triggering voltages. They have an on·state cur·
silicon triacs utilizing a plastic case with three leads to • Low Thermal Resistance
rent rating of 6 amperes at a TC of 800C and repetitive off·
facilitate mounting on printed-circuit boards. They are state voltage ratings of 200 volts and 400 volts, respectively.
intended for the control of ac loads in such applications as TERMINAL CONNECTIONS
motor controls, heating controls. relay replacement, solenoid These triacs employ the plastic JEDEC TO-220-
drivers, static switching, and power-switching systems. AB package.
MT'
These devices are designed to switch from an off-state to an
on· state for either polarity of applied voltage with positive or • Formerlv RCA Ow, NOL TA8OO'" and TA8505. MT.
Mr,
(fLANGE)
MAXIMUM RATINGS, AbJQlu,,,.Ma.imum V.'Ul/I:
For O/l«.'jo,. with S;"wo;rJ.1 Supply VOl,.", lilt F,.qwncier up to 50160 Hz ~nd with RflS/ltilifl Or I"duct'". Load.
REPETITIVE PEAK OFF-5TAToE VOLTAGE:- T25IIIIII T2IODO
Gate open. T J .. -65 to 100 C . VOAOM 200 400 v . GATE
RMS ON-STATE CURRENT IConductlon angle = 360°1:
case temper:ture ITIAMSI
TC" SO C
For other conditions
---6---
-See Fig. 2 -
A
BOTTOM VIEW
PEAK SURGE INON·REPETITIVE) ON·STATE CURRENT: JEDEC TO-220AB
For one cycle of applied principal voltage. TC • BODe IT5M _ _ _ 60 _ _ _
60 Hz Isinusoidal! .. A
(See dlmenslonai outline "S".)
_ _ _ 50 _ _ _
50 Hz Isinusoidal! . A
For more than one cycle of applied principal Voltage.
- See Fig. 3 -
RATE OF CHANGE OF ON,sTATE CURRENT:
VOM • VOROM. I.GT • 200 rnA, Ir - 0.1 ~s di/dt 70 AI,..
FUSING CURRENT (for Triac Protection):
TC" -65 to 100°C. t ·'.25 to 10 mi•....•••••.. _ .••••.•••...••.•...••.....••••.
PEAK GATE·TRIGGER CURRENT:-
,2, I. A2 ,
For 10,",5 max; see Fill- 10 IGTM ---4--- A

GATE POWER DISSIPATION:
Peak IFor 1 ~smax .• IGTM ::;4 A; see F;II- 6) PGM
___ '6 ___ W
AVERAGE. PGIAVI--_O. 2 - - - W
TEMPERATURE RANGE:-
Storage . _ _ -65 to 150 _
Tstg °c
Operating lease)
TERMINAL TEMPERATURE lOuring soldering):
TC
- -65 to 100_
_ _ 225 _ _ _
0c
For lOs max. (terminalland case) .' TT °c

• For eithef polarity of main terminal 2 voltage IVMT2) with reference to main terminal 1.
FULL-CYCLE ,...s ON-STArt CUMI£NT [I TI."S~-A
e For either polarity of gate voltage IVGI with reference to main terminal 1.
• For temperllture measurement reference poi"t. see Dim"uioMi autUnfl. RCS·20HO
Fig. I-Power dissipation vs. on-state current.
2 4 12
. .. 10
. .. 100
SURGE CURRENT DURATIOM-FUlL CYClES
.,. 1000
UCS' 20'$2 I
RMS ON'STATE CURRENT [ITIRMS~-A POSITIVE Oft ",GATIV! IGTANTMEOUS ON·STATE VOLTAGEI"TI-V
Fig. 3-Peak surge on-state current IICS-I502IAI
vs. surge-current duration. Fig. 4-0n-state current vs. on-state

Fig. 2-Allowable case temperature
voltage.
vs. on-state current.

US'·S~I
Fig_ 5-DC holding current for either Fig. 7-DC gate-trigger current (for 1+
Fig. 6-Gate-pulse characteristics for all
direction of on-state current and 111- triggering modes) vs.
triggering modes.
vs. case temperature. case temperature_
--------------------------------------------------------_____________ 553
TRIACS
T2500 Series
ELECTRICAL CHARACTERISTICS at Maximum Ratings unless otherwise specified, and at
indiCited Ca.. Temper.ture (TC)
LIMITS
CHARACTERISTIC SYMBOL T2I5OOB T2600D UNITS
MIN. TYP. MAX. MIN. TYP. MAX.
Peak Off·State Currenl:'
GIll Op~n. VOROM =Max. rIled value
AtTJ' 1000C .............................
IOROM - 0.1 2 - 0.1 2 mA
Maximum On·State Voltage:'

For iT • 30 A(peak) and TC • 25 0C . .............. vTM - 1.7 2 - 1.7 2 V
CASE TEMPfRATURE ITCI-·C

DC Holding Current:·
Fig. 8-DC gate-trigger current (for l-
Gate Open and 111+ triggering modes) vs.
Initial principal current· 150 mA (de) IHO mA
temperature.
At TC' 250C •••••••••••••••.•••••..•••. -.• - 15 30 - 15 30
For other case temperatures •••••••••••••...••••• See Fig.5.
Critical Rate of Rise of Commutation Voltage:" PRINCIPAL DC VOLTAGE.'2Y
LOAD '1211. RESISTIVE
3 TflIGGEfll~ MODES: ALL
For vo • VOROM. ITIRMS) • 6 A, Commutaling dv/dt
di/dl • 3.2 Alms, and gale unenergized V/"s
AI TC = BOoC .................•..... , ...... 4 10 - 4 10 -
'I 2
Critical Rate of Rise of Off·State Voltage:"
For vo' VoROM exponential voltage rise, and gate open !
AtTC' 1000e ..•.•.......•••• , •......... dvldt 100 300 - 75 250 - V/"s
For other case temperatures .•..••.•.........•.. Sal Fil.9
DC Gale-Trigger Curren 1:" t
For Vo • 12V (de), RL = 12 n
TC. 25 OC, and speCified triggering mode:
·TO
."
CASE TEMPERATURE ITcl - ·C
I+ Mode (VMT2 pOlitive, VG positive) ....•.........• - 10 25 - 10 25

m- Mode (VMT2 negolive, VG negotive!. ............ IGT - 15 25 - 15 25 mA Fig. 9-DC gate-trigger voltage vs.
I- Mod. (VMT2 positive, VG negotiv.!. ...... _....... - 20 60 - 20 60 case temperature.
m+ Mode (VMT2 nogalive, VG positive) ............. - 30 60 -
30 60
For othor .... tlmpl..tum .•..................... r-- See Figs. 7' and 8 . _ OFF-STATE VOLTAGE tVOI-VOROM
GATE OPEN
DC Gate·Trigger Voltage:" t
For Vo = 12V hie) and RL =12 n 1250
AtTC= 25 0C •••••.•••••••••.•.....•...•••
VGT
- 1.25 2.5 -11.2512.5
V
For other case temperatures •.•••••..•.•••••.•••• Se. Fig.9 1000
For Vo • VOROM and RL • 125 n TOO

At TC' lOOoC ........ , ................... 0.2 - - 0.2 - -
GIII·Controlied Turn·On Time (Oelay Time + Rile Timo):
200
For vo = VORO",. IGT =160 mA, risa See Fig. "
timl • 0.1 IA. Init i1' • 10 A (poak) ~t - 1.6 2.5 - 1.6 .. 2.5 "s 00 10
At TC • 250 C .................. CASE TEMP£AATUAE (Tcl-·C
'2$S-5101111
Fig. to-Critical rate of rise of off·state

Thermai Resistance: voltage vs. case temperature.
Junction·to-C~se ••••••••••••••••••••••••••••• R8JC - - 2.7 - - 2.7 °CIW
Junction-to-Ambient ........................ , .. R8JA - - 60 - - 60 °CIW
-For either Pl!1~ity of main terminal 2 voltaae (VMT2) with reference to main terminal 1.
tFOf elthe, polarity of .Ite voltate (V G) with reference to main terminal 1.
'v.I..ts 0' these devices havin. Uv/dt characteristics selected specifically fOf inductive loads are available on
speelll order; fOl additional information, contact your RCA Representative or your RCA Distributor.
Fig. ,,-Typical.turn·on time vs.

gate-trigger current.
554 _______________________________________________________________________
TRIACS
T2700, T2710 Series
Features:
6-A Silicon Triacs
• Shorted-emitter construction • . .
For Power-Control and Power-Switching Applications contains an Internally diffused resistor
between gate and Main Terminal 1
RCA T2700- and T2710-series devices T2700B and T2700D are hermetically
• Center gate construction ••. provides
are gate-controlled full-wave silicon sealed types having an on-state current
rapid unllorm gate-current spreading
triacs. They are intended for the control rating of 6 amperes at a case tempera-
lor laster' turn-on with substantially
of ac loads in applications such as heat- ture of +75°C and repetitive off-state reduced heating effects
ing controls, motor controls, light dim- voltage ratings of 200 volts and 400 volts,
mers, and power switching systems. respectively.
These triacs are designed to switch from The T2700 series types employ the her-
an off-state to an on-state condition for metic JEDEC TO-66 package. The T271 0
either polarity of applied voltage with series employ the hermetic TO-66 with a TERMINAL CONNECTIONS
positive or negative triggering voltages factory attached heat-radiator package.
to the gate.
JEDEC TO·66
MAXIMUM RATINGS, Absolute-Maximum Va/uss; (See dimensional oulline "N".)
For Operation with Sinusoidal Supply Voltage at Ffflquencies of 50/60 Hz, and with Resistive or Inductive Load MTI
T2700B T2700D
T2710B T2710D
REPETITIVE PEAK OFF·STATE VOLTAGE- VORDM:
Gate Open,
ForTJ=-65to100o •••••••••••••••••••••••••••••••••••••••• 200 400 V
RMS ON·STATE CURRENT. It(rmsf
For case temperature (TC) of +750 C and a conduction angle of 360° A
For ambient temperature (T A) up to +1oo°C and a conduction MT2' GATE
angle of 360 0 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • See Fig. 3. {HEAT RADIATORl
PEAK SURGE (NON·REPETITIVE) ON·STATE CURRENT ITSM:
For one cycle of applied principal voltage. T C = 75(> C JEDEC TO·66 With Heat Radiator
60Hz (sinusoidal) ••..•.•.•...........•••..•••...•...•...•..• 100 100 A
50HZ (sinusoidal) ...•..••.•••..•..........•..••..•••........ 85 85 A (See dimensional outline "0".)
For more than one full cycle of applied voltage .....•..•...•... See Fig. 4.
RATE OF CHANGE OF ON·STATE CURRENT:
VOM =VOROM IGT =200m A, tr = O.~s dildt ................. . 100 Al.
FUSING CURRENT (tor trllc protecUon) 12•
TJ=-65t0100°C.t= 1.25to10ms .•.....••..••.••..•...•...• 50 50 A2.
PEAK GATE·TRIGGER CURRENT _ IGTM:
--
For 1 P.s max .•••...••..•.••..........•.•....•..••..•........ A
GATE POWER DISSIPATION:_ PGM
Peak For 1 lots max. and IGTMS4 A (peak) ................... . 16 16 W
Average •••.....•.••...•.........•..•.............••.•..••.. PG(AV) .02 0.2 W
TEMPERATURE RANGE.
................................. ~................. ~ -65 to +150 ·C
Operating (case) ............................................ Tslg -65 to +100 ·C
-For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
-For either polarity of gate Voltage (VGT) with reference to main terminal 1.
* For information on the reference point of temperature measurement. see Dimensional Outline. I 2 3 -4 !I
fULL-CYCLE RMS ON-STATE AMPERES [111''''IU
Fig. 1-Power dissipation vs. on-state

current.
~ I. :Illi
:911
CURRENT ....... HOR .. SINUSOIDAL SUPPLY FREOuENCY !Ie 160 HZ SINE W.AvE r
LOAD RESISTIVE OR INDUCTIVf' ~~~~·~i~~~~V:TURE (TCl' + 1:"C ~-~~~;t·
COtOJCTION ANGLE' 360"
o 18C,"JJ340'
'i
.......
1-80
~
~,,"
t
IOO~ ON-STATE AMPERES
-1:
(l'~~~_ ~-... t-~t'
I GATECONTROLIoIAVBELOST
DURINGANOI...... EDIATELY
FOLLOWING SURGE CURRENT
--_. . INTERVAL
!:! , OVERLOAD MAY NOT BE RE-
·--I--'f..H-l'flJh60 Hf 7 ~~~~f::~~~~T~~rRTi~~RNEO
CONOUCTImr. ANGLE
. 61 + 6 m
i,of--++++1+~""_~di'''~o "CO, -
. ,~,'-" '11 il
m
t= ~rtt
,. 'O~ r- r~
o ,
R.. S ON-STATE AMPERES llttt",•• ) 4' I 4 'I
10 100 1000
RMS ON-STATE AMPERES [III,mll] SURGE CURRENT OURATION-FULL CYCLES
<Jl~~·~181
Fig. 2-Allowable case temperature vs. Fig. 3-Maximum allowable ambi~~-;O.9'"

on-state current. Fig. 4-Peak surge on-state current
temperature vs. on-state vs. surge-curren t duration.
current.
________________________________________________________________________ 555
TRIACS ____________________________________________________________________
T2700, T2710 Series
ELECTRICAL otARACTERISTlCS
At Maximum Ratings and at Indicated Case Temperature (TCl Unless OtherwiBe Specified
I
I CHARACTERISTIC SYMBOL T27008 T27108
LIMITS
T2700D T2110D UNITS
I Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
IPeak Off-State Current:'
Gate Open
At TJ •• lOOoe and VOROM - Max. rated value
IOROM - 0.1 4 - 0.1 1.2 - 0.2 4 - 0.2 1.2 mA
Maximum On-State Voltage:'

For IT =30A (peak) and Te =.25 0C ................ vTM - 1.8 2.25 - 1.8 2.25 - 1.8 2.25 - 1.8 2.25 V
Gate Open
Initial principal current =150mA (DC) mA
At TC =.25 0C .•••••••••••••••••••••••••••. IHO - 15 30 - 15 30 - 15 30 - 15 30
For other case temperatures ••••••••••••••••••••• • ~Fig.6. •
Critical Rate of Rise of Commutation Voltage:"
For VD - VOROM, I~rms) • 6 A, commutating
dl'dt • 3.2 Alms, and gate unenergized
AtTC··750C .•..•••..••.••••.•.••.•••..••
dv/dt
3 10 - - - - 3 10 - - - - V/p.s
I«rms) and TA specIfied by
curve Aof Fig. 3 ....•.....••.••••.•...•....• - - - 3 10 - - - - 3 10 -
I«rms) and TA specIfied by
curve B of Fig. 3 ....•.•....••...••...•.••.. - - - 4 12 - - - - 4 12 -
Critical Rate of Rise of Off·State Voltage:'
For Vo • VDROM, exponential voltage use, and gate open dv/dt 30 150 - 30 150 - 20 100 - 20 100 - V/p.s
At TC •• 100 °c
DC Gate·Trlgger Current't
For Vo -12 voltslDC), RL = 12il
TC' .25 0C, and specified trlggerrng mode:
I. Mode: positive VMT2, posllrve VGT ...•..•••.•.••. IGT - 15 25 - 15 25 - 15 25 - 15 25
111- Mode: negative VMT2, negative VGT ......•..••••• - 15 25 - 15 25 - 15 25 - 15 25
mA
1- Mode: positive VMT2' negative VGT ••.•••••••..••• - 25 40 - 25 4IJ - 25 40 - 25 40
- - -
III. Mode: negative VMT2, positive VGT ..••.••..•••..
For other case temperatures ....................... . 25 40 25 40
See Fig. 8 & 9 •
25 40 - 25 40
•
L
DC Gate·Tugger Voltage:'t
FOI VO' 12 volts (DC) and RL ·1211
At TC •• 25 °c .............................
For other case temperatures •.••...•...•..•••.•..
For Vo • VDROM and RL' 125 n
VGT
-..
-1112.21-11 1-11 12.21-11 12.2
See Fig.lO. .. V
At TC •• 100 °c .•••••..••.••.•.•...•..•.••. 0.2 - - 0.2 - - 0.2 - - 0.2 - -

Gate-Controlled Turn·On Time:
(Delay Time. Rise Time)
For VO' VOROM lI1d IGT' 80mA,
0.11" s lise time, and iT • 10 A(peak)
Igt - 2.2 - - 2.2 - - 2.2 - - 2.2 - p'S
AtT C •• 25 °c
Thelmal Resi stll1ce:
Junction·to-Case (Steady·State) .•••...•••••••••..•••
Junction·to-Case (Transient) ••••••••••••••••••••.•
Junction-to-Ambient ••••••••.•••••••••••••••••••
11 J-C
I1J-A
..-- I -- I - I
4 - - - - -
SeeFig.ll.
See Fig. 3. I - I -
4 -
I - I See Fig.
- -
3.
• °CIW
·FN .ithef pol.ity of main terminal 2 volt_, (VMTZ ) with reference to main terminll 1.
!For either polarity of I.e voll... (VGTl willi ,efe,encelo mein torminll 1.
'Varionla of these devlees hlVinl dv/dt charaelo'isties selected speclflcilly lor
inductive loads are available on spec::ill Of.,; tor additlon.1 information, cont«t
yo.. RCA Represenlltive or yo.. RCA Dlsl1ibutor.
556 _______________________________________________________________________
TRIACS
T2700, T2710 Series
INITIAL ON-STATE MILLIAMPERES'150
o
~125
.... ,,:'1,::'
. . :.,:,p
·CASE TEMPERatURE IT(I- "C
POSITIVE OR NEGATIVE INSTANTANEOUS
ON~STATE VOLTS IWT'
Fig. 6-DC holding current for either
Fig. 5-0n-state current VS. on-state direction of on-state current Fig. 7-Gate-pulse characteristics for
voltage. vs. case temperature. al/ triggering modes.
PRINCIPAL DeVOllS'12 PRINCIPAL DC VOLTS' 12 PfUNCl'AL DC VOLTS' 12
LOAD '1211, RESISTiVE LOAD' 124, RESISTIVE LOAD '120. RESISTIVE
TRIGGERING IIIODES, 1+ AHo In- TRIGGERING MODES: I-ANDIU- TRIGGERING, MOOES. ALL
-;.'
!o
:l125
~
~ 100
3
:: 25
g
-n
CASE TEMPERatURE 1TCI--C
,. -00 -,.
CASE TEMPERATURE tTcl-·C
,. -so ..
-
Fig. 8-DC gate-trigger current (for 1+ Fig. 9-DC gate-trigger current (for l- Fig. to-DC gate-trigger voltage vs.
and 1/1- triggering modes) ,+
and" triggering modes) vs. case temperature.
vs. case temperature. case temperature.
ao 100 120
~--~L--r~ . .~"--,,~.~.~.~-Y..c-~~ DC GATE-TRIGGER MILLIAMPERES I1 GT '

10'5 10-2 10-1
TIME AFTER APPLICATION or RECTANGOLAR POWER PULSE -SECON:IS
Fig. II-Transient therm'l/. resistance Fig. 12- Tvpical turn-on time vs.
(junetion-to-case vs. time). gate-trigger current.
557
TRIACS
T2800, T2801, T2802 Series
6-A and 8-A Silicon Triacs

Three-Lead Plastic Types for
Power-Control and Power-Switching Applications
Features: BOTTOM VIEW /

GATE
• 100-A peak surge full-cycle current
92C5-27718
ratings
• Shorted-emitter center-gate design
• Low switching losses BOTTOM VIEW
• Low thermal resistance
JEDEC TO-220AB
• Package design facilitates mourlting
on a printed-circuit board (See dimensional ouliine "S".)
These RCA triacs are gate-controlled full-wave silicon switches The T2801 and T2802 series triacs are characterized for 1+, 111-
utilizing a plastic case with three leads to facilitate mounting on gate triggering modes only and should suit a wide range of
printed-circuit boards. They are intended for the control of ac applications that employ diac or anode on/ off triggering.
loads in such applications as motor controls, light dimmers, All series employ the plastic JEDEC TO-220AB package.
heating controls, and power-switching systems. The plastic package design provides not only ease of
These devices are designed to switch from an off-state to an mounting but also low thermal impedance, which allows
on-state for either polarity of applied voltage with positive operation at high case temperatures and permits reduced
or negative gate triggering voltages. heat-sink size.

For Operation with Sinusoidal-Supply Voltage at Frequencies up to 50160 Hz and with Resistive or Inductive Load.
T2800F T2800A T280DB T2800C T28000 T2800E T2800M
T2801F T2801A T2801B T2801C T2801D T2801E T2801M
T2802F T2802A T2802B T2802C T2802D T2802E T2802M T2802S
VDAOM·
Gate Open. TJ::::: -65 to 1000C .. 50 100 200 300 400 500 600 700 v
I Y'AYSI
(Conduction angle::::: 360 0 ):
Tc == 80" C (T2BOQ, T2802 series) A

= 80" C (T2801 series only) . A
For other conditions .... - - - - - - 5 0 0 F;g. 4 - - - - - - -
ITsM
For one cycle of applied principal voltage
60 Hz (sinusoidal), Tc = BOO C
(T2800, T2B02 series) ...•... 100 A
50 Hz (sinusoidalj.Tc = BO°C
(T2BOO, T2B02 series) •. 85 A
60 Hz (sinusoidall.Tc = BooC
(T2BOl series only) 80 A
50 Hz (sinusoidal). Tc = 800 C
(T2BOl series only) ......... . 65 A
principal voltage .................... . See Figs. 5,6
di/dt
Vo = VOROM,Iar = 200 rnA, 1, = 0.1 fJs .• 70 AI..
I'.
At Tc shown for irlRMSf
1= 20 ms
T2800. T2802 • 55 A'.
T2801 35 A'.
= 2.5ms
T2800, T2B02 . 28 A'.
T2801 •••....•. •8 A' •
= 0.5 ms
T2800. T2802 ........ 16 A'.
T2801 ..... 10 A'.
IGTMt
For 11JS max. See Fig. 11. A
PG"
Peak (for 1 JiS max., IGn..:5 4 A, See Fig. 11 . 16 W
POI"Vf ••••• 0.35 W
T..,t .................. . 6510150 ·c
Tct ... · .••. 65 to 100 ·c
TT (During soldering):
For 10 s max. (terminals and case) .. 225 ·c
"For either polarity of main terminal 2 voltage (V MT2) with reference to main terminal 1.
tFor either polarity of gate voltage (VG) with reference to main terminal 1.
:J:For temperature measurement reference point, see Dimensional Outline.
558 ________________________________________________________________________
TRIACS
T2800, T2801, T2802 Series

ELECTRICAL CHARACTERISTICS At Maximum Ratings Unless Otherwise Specified and at Indicated Temperature
Limit.
For All Typli
CHARACTERISTICS Except .1 Specilled
Symbol Min. Typ. Max. Unltl
Peak Off-State Current:'
Gate open, TJ == e, VORO M :::: Max. rated value
100 o iOROt.! - 0.1 2 mA
Maximum On-State Voltage:' (See Figs. 9,10)
For it:::: 30 A (peak), Te:::: 25°C (T2800. T2802 series) v," - 1.7 2 V
(T2801 series) - 2 3
DC Holding Current:"
Gate open, Initial principal current:::: 150 rnA (de)
Vo:::: 12 V. Te = 25°C, T2800 series - 15 30 Fig. 1 - PrinCipal voltage-current characteristics.
T2801 series IHo - 100 - mA
T2802 series - 20 60
For other case temperatures See Figs. 7. 8
Critical Rate-of-Rise of Commutation Voltage"t
CURRENT WAVEFOR~: SINUSOIOAL
For Va :::: VORmA. hlRMSI = 6 A, com mutating dUdt :::: 4.3 Alms, 1.0AD: RESISTIVE OR INOUCTIVE
gate unenergized, Tc == 80~C (T2800, T2602 series) 4 10 - CONDUCTION ANGLE: 360·
CASE T'fMPERATURE; MEASURED AS
For Vo =VCRCM• InRMsl = 6 A. commutating dildt = 3.2 Alms. dv/dt VIps SHOWN ON DIMENSIONAL OUTLINE
gate unenergized. Te =
80°C (T2801 series) 2 10 -
Critical Rate-aI-Rise of Off-State Voltage:'
For Vc = VCROM. exponential voltage rise. gate open. T e = 100° C CONDUCTION ANGLE
T2800B. T2802B 100 300 - -el + elU
T2800C. T2802C
dv/dt
85 275 - VljJS
T2800D. T2802D 75 250 -
T2800E. T2802E 65
60
225
200
--
T2800M, T2802M
T2801 B 50 300
T2801C dv/dt 40 275 Vips
T2801D 30 250 - 4 ~ 12
T2801 E 20 225 - 92CS-34130 RMS ON-STATE CURRENT (tTIRMSn-A
DC Gate-Trigger Current*t
Fig. 2 - Maximum allowable case temperature vs.
For Vc'::::: 12 V (dc),R L = 12 O,Te = 25°C
on-state current.
Mode VMT2 VG
I' positive positive T2800 series - 10 25
T2801 series - 25 80
- 50 mA
II
T2802 series IG' 25
IW negative negative T2800 series - 15 25
T2801 series - 25 80
I
III'
positive
negative
T2802 series
negative T2800 series only
positive T2800 series only
-
-
-
25
20
30
50
60
60
.
'For other case temperatures See Figs. 11, 12. 13
DC Gate-Trigger Vollage:"t
=
Forvo= 12V (dc),RL 120, Tc=25°C
T2800, T2802 series V., - 1.25 2.5 V
T2801 series - 1.5 4
For other case temperatures See Figs, 14, 15, 16
CONDUCTION ANGLE
For Vc VOROt.l. RL 1250, Te 100"C 0.2 - - ·91 + 9111
Gate-ContrOlled Turn-On Time:
10
For Vc = VOROt.l. laT = 80 mA, t, = 0.1 ps
~T{~~~S-=-'~OI8R2
ir = 10 A (peak). Te = 25°C (T2800, T2802 series)
toO
- 1.6 2.5
ps
FUl.L- CYCLE RMS ON - ST ATE CURRE NT
(T2801 series) - 2.2· - Fig. 3 - Power dissipation vs. on-state current for
Thermal Resistance: T2800, T2802 series.
Junction-to-Case R8Je - - 2.2
"C/W
Junction-to-Ambient R8JA 60
For either polarity of main terminal 2 voltage (VMT2) with reference to maIO terminal 1.
tFor either polarity of gate voltage (VG) with refrence to main terminal 1.
tVariants of these devices having dv/dt characteristics selected specifically for inductive leads are available on special
order; for additional information, contact your RCA Representative or your RCA Distributor.
FULL- CYCLE RMS ON-STATE CUfl:RENT~TlIliMSll-A
Fig. 4 - Power dissipation vs. on-state current for

T2801 series.
________________________________________________________________________ 559
TRIACS
T2800, T2801, T2802 Series
50Hz
,
9ZCS_Z464IRI
10
.. 6 a
100
.. S8.
10DO
SURGE CURRENT OURATION-FULl CYCLES SURGE CURRENT OURATION-FuLL CYCLES CASE TEMPERATURE (Tcl-·C
Fig. 5 - Peak surge on-state current VS. surge current duration Fig. 6 • Peak surge on-state current vs. surge current duration Fig. 7 - DC holding current VS. case temperature lor T2800,
for 72800, T2802 series. for T280f series. T2802.
, CASE TENPERATURE (TC1'2S-C CASE TEMPERATURE !Tc,"2:5"C
-60 Z., 92CS-ISOZIRI

CASE TEMPERATURE ITCI-·C POSITIVE OR NEGATIVE NSTANTAN[OUS ON-STATE VOLTAGEt'lTI-V I
Fig. 8 - DC holding current VS. case temperature for 72801 Fig. 9 - On-stats current VS. on-state voltage fOf T2800. T2802 Fig. 10 . On-state current VI. on-st.te voltage for T2801 .rle,.
series. series.
PRINCIPAL DC VOLTAGE ol2V PRINCIPAL DC VOLTAGE -IZV

LOAD' 12 .n.. RESISTIVE LOAD _ IZ .ft, RESISTIVE
CASE TEMPERATuRE {Tel _·C CASE TEMPERATURE (Tci _·c 92(:5-34126

CASE TENPERATURE (Tcl-·C
92CS-3~125
Fig. 11 - DC gate-trigger cummt (for ,. and IIr triggering Fig. 12 - DC gate-trigger current (for ,. end ur
triggering Fig. 13 - DC gate-trigger current (for 1- and IJr triggering
~odes) VS. case temperature for T28oo, T2802 series. modes) vs. case temperature for T2801 series. modes) vs. case temperature for T2800. T2802 series.
PRINCIPAL DC VOLTAGE -IZV PRINCIPAL DC VOLTAGE-IZV

LOAD ~ IZA. RESISTIVE LOAD ~12n. RESISTIvE
3 TRIGGERING NODES ; ALL 61 TRIGGERING IoiODES; 1+,111"
~I 4
~!
~~ I
*~ 21
~
o
-75 -50
CASE TEMPERATURE ITcl _·c
.
92CS-34IZ8
-70 -'0 -"
CASE TEMPERATURE ITel -"C "
Fig. 14 - Gate pulse characteristics fOI all triggering modes for Fig. 15 - DC gate-trigger voltage vs. case temperature for T2800, Fig. 16 - DC gate-trigger voltage vs. case tempelature for T280t
all series. T2802 series. series.
560 ________________________________________________________________________
TRIACS
T2800, T2801, T2802 Series

RFt FILTER
R, , , ,..- --- ---,,
LOAD
'fjesT!
,, ,, I LF :
:
~
RCA TRIAC ~~
R';.Y
R3
(SEE~,_ : RS
,
'
:
,
, ,
,,
CFr
AC INPUT
VOLTAGE I
~c Lr-~
L ______ J
SNUBBER NETWORK FOR INDUCTIVE

LOADS OR WHEN COMMUTATING VOLTAGE
Cli
"r
(dv/dt) CHARACTERISTIC IS EXCEEDED.
92CS-34122
AC Input 120 V 240 V 240 V

Voltage 60 Hz 60 Hz 50 Hz
F/g. 17· Turn·on time vs. gatfHrigger current for T2800, T2802
series. C, 0,1 pF 0,1 pF 0,1 pF
200 V 400 V 400 V
C2 0,1 pF 0,1 pF 0,1 pF
100 V 100 V 100V
R, 100 kO 200 kO 250 kO
1/2 W 1/2 W 1/2 W
1/2 W lW lW
R2 2,2 kO 3,3 kO 3,3 kO
1/2 W 1/2 W 1/2 W
OFF-STATE VOLTAGE Wol-VORON
GATE OPEN
R3 15 kO 15 kO 15 kO
1/2 W 1/2 W 1/2 W
~
1250
SNUBBER
~ NETWORK Cs 0,068 pF 0,1 pF 0,1 pF
For 6 A and 8 A 200 V 400 V 400 V
" (RMS) IN-
'00 DUCTIVE Rs 1,2 kO 1 kO 1 kO
200
LOAD 1/2 W 1/2 W 1/2 W
RFI CF ' 0,1 pF 0,1 pF 0,1 pF
20 40 60 .0 100 200 V 400 V 400 V
92C5-34129
FILTER LF' 100 pH 200 pH 200 pH
Fig. 18 - Typical critical rate-ot-rise of off-state voltage VS. case T2800B T2800D T2800D
temperature for all series.
T2800C T2801D T2801D
T2801B T2801E T2801E
RCA TRIAC
T2801C T2802D T2802D
T2802B
T2802C
'TYPical values for Lamp dlmmmg Circuits,
Fig, 19 - Typical phase-control circuit for lamp dimming, heat
control, and universal-motor speed control,
_____________________________________________________________________ 561
TRIACS ________~-----------------------------------------------------------
BTA20 (T2800) Series
Features
6-A Silicon Triacs • eO-A peak surge full-cycle
current ratings
Three-Lead Plastic Types for • Shorted-emitter center-gate design
Power-Control and Power-Switching Applications • Low switching losses
• Low thermal res/stance
• Package dasign facilitates mounting
on a printed-circuit board
The RCA BT A20-series triacs are gate- 80· C and repetitive off-state voltage rati ngs TERMINAL DESIGNATIONS
controlled full-wave silicon switches of 300, 400, and 500 volts. MTI
utilizing a plastic case with three leads to These devices are characterized for 1+,111- MT2
facilitate mounting on printed-circuit MT2
gate-triggering modes only and should suit (FLANGE)
boards. They are intended for the control of a wide range of applications that employ
ac loads in such ·applications as motor diac or anode on/off triggering.
controls, light dimmers, heating controls,
and power-switching systems. All these types are supplied in the JEDEC
TO-220AB VERSAWATT plastic package. GATE
These devices are designed to switch from The plastic package design provides not 9ZCS-27718
an off-state to an on-state for either polarity only ease of mounting but also low thermal
of applied voltage with positive or negative impedance, which allows operation at high JEDEC TO-220AB
gate-triggering voltages. They have an on- case temperatures and permits reduced (See dimensional oulllne "S".)
state current rating of 6 amperes at a TC of heat-sink size.

Fig. 1 - Principal voltag.... current characteristic.
For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with
Resistive or Inductive Load.
BTA20C BTA20D BTA20E
VDROM", Gate open, TJ=-65 to 100·C •....•...• 300 400 500 V
IT(RMS). TC=80·C, 8=360· •..•..•..•...•....•.. 6 A
For other conditions ......•..•..•.....•..•.. See Fig. 3
ITSM
60 Hz (sinusoidal), TC=80·C ••••........ 80 A
50 Hz (sinusoidal), TC=80·C .........•..• 75 A
principal voltage •.....•.................•• See Fig. 4
dildt FULL- CYCLE RMS ON-STATE CURRENT~T[_S!l-"
VD=VDROM, IGT=200 mA, tr=O.l /IS .•.•.••• 70 Nps ~2CS-l4B415
12t (See Fig. 10) Fig. 2 - Power dissipation vs. on-state current.
1=20 ms 40
1=16.67 ms 38
1=2.5 ms 20
1=0.5 ms 11
IGTM-
For 1 /IS max., See Fig. 5 .•.•....••...•...••. 4 A
PGM (For 1 ps max., IGTM S 4 A, See Fig. 5 , .••• 16 W
PG(AV)··········.··.· .• · ...•....•.............. 0.35 W
Tstg* .............•..•.•.•••..........•.......• -65 to 150 ·C
TC*············································ -65 to 100 ·C
TT (During Soldering):
For lOs max. (terminals and case) ......•.... 225 ·c
RMS ON-STATE CURRENT [ITIRMSn-A
"For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
-For either polarity of gate voltage (VG) with reference to main terminal L Fig. 3 - Allowable case temperature vs. on-state
*For temperature measurement reference point, see Dimensional Outline. current.
562 ____________________~--------------------__--__-----------------------
--__________________________________________________________________ TRIACS
LIMITS
For All Types
Except as Specilled
MIN. TYP. MAX.
10ROM·
Gate open, TJ=100°C, VOROM=Max. rated value .. - 0.1 2 rnA
VTM·
iT=30 A (peak), TC=25°C (See Fig. 6) ............ - 2 3 V
IHO·
Gate open, Initial principal eurrent=150 rnA (de)
vO=12 V, TC=25°C ............................ - 100 - rnA INSTANTANEOUS ON~STATE VOLTAGE {vT1-V
{POSLTlVE OR NEGATIVE)
For other case temperatures ...................... See Fig. 7
dv/dt (Commutating)·
Fig. 6 - On-state current vs. on-state voltage.
vO=VOROM, IT(RMS)=6 A,
eommutating di/dt=3.2 Alms,
gate unenergized, TC=80°C ....... 2 10 - Vips
dv/dt
vO=VOROM, exponential voltage rise, gate open,
TC=100°C:
BTA20C ..................................... 40 275 -
BTA200' ..................................... 30 250 - Vips
BTA20E ..................................... 20 225 -
IGl"'- Mode VMT2 VG
vO=12V (de) 1+ positive positive ... - 25 80
RL=12 n rnA -20
TC=25°C 111- negative negative ... - 25 80 CASE TEMPERATURE (Tcl-·C
For other case temperatures ...................... See Fig. 9 Fig. 7 - DC holding current vs. case temperature.
VGT"-
vO=12 V (de), RL =12 n,
TC=25°C ......................................
For other case temperatures ......................
- I I 1.5
See Fig. 11
4
V
OFF~STATE VOLTAGE !VD}~VDROM
GATE OPEN
vO-VOROM, RL -125 n, TC-100°C ............... 0.2 - - L2!50
tgt
LOOO
For vO=VOROM, IGT=80 rnA, tr=0.1 ps,
iT=10 A (peak), TC=25°C ......... - 2.2 - ps 700
ROJC .............................................. - - 2.2

°CIW
500
ROJA .............................................. - - 60
·For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1. 20 40 80
-For either polarity of gate voltage (VG) with reference to main terminal 1.
Fig. 8 - Critical rate-ot-rise ot off-state voltage

VS, case temperature.
SUPPLY FREaUENCY:50/6QH:SINEWAVE a
.,
LOAD; RESISTIVE 300, PflINClPAL DC VOLTAGE-12V
CASE TEMPERATURE (Tel' eo·c LOAD- 12 A,RESISTIVE
100 RNS ON-STATE CURRENT [~T RIAS J' 6A
~i GATE CO~~~OL MAY BE LOST
i= 'i
i= ~ 0
~ ~8 ~
DURING AND IMMEDIATELY
FOLLOWiNG SURGE CURRENT
INTERVAL. st0NTc~fo~E-
t
i5 ~ 60
~ a
: : 40 r--++t+tnll'-.;:+'i"'l4-!:fllt<"'60iHI
VALUE
HAS RETURNED
TATE
i
~ 2°r--++Hi~--'0~~~~~~-+-fff~
4 'I " , I " 6 8

10 100 1000
SURGE CURRENT OURATION-Fut..L CYCLES CASE TEMPERATURE ITcl _·C
Fig. 4 - Peak surge on-state current vs. surge Fig. 5 - Gate pulse characteristics tor all Fig. 9 - DC gate-trigger current (tor 1+ and 111-
current duration. triggering modes. triggering modes) vs. case temperature.
________________________________________________________________________ 563
TRIACS _________________________________________________________________

AT TC SHOWN FOR I r I Rt.4S1 PRINCIPAL DC VOLTAGE-rzv
LOAD "12Jl, RESISTIVE
TRIGGERING MODES: I .... IW
I 4
468
1
2 468
TIME (I)- ms
10
... 100
-50
CASE TEMPERATURE (Tel - ~c
Fig. 10 - Peak surge on-state current and fusing Fig. 11 - DC gate-trigger voltage vs. case
current vs. time. temperature.

92CM-33742
AC INPUT 120 V 240 V 240 V

VOLTAGE 60 Hz 60 Hz 50 Hz
C1 O.111f 0.1 pF 0.1 JiF
200 V 400 V 400 V
C2 0.1 pF 0.1 Jif 0.1 Jif
100 V 100 V 100 V
R1
1~?~O 2??!0 2~?!0
R2 2.2 kO 3.3 kG 3.3 kQ
'I.W 'hW 'hW
R3 15 kO 15 kG 15 kO
'hW VOW 'hW
SNUBBER
NETWORK Cs 0.068 IJF 0.1 IJF 0.1 JiF
FOR 6A 200 V 400 V 400 V
(RMS}-IN-
OUCTIVE RS 1.2 kO 1 kO 1 kO
LOAD 'I.W 1/2W 'f2 W
0.1 pF O.1I1F 0.1 pf
RFI CF· ~oo V 400 V 400 V
FILTER LF· 100 pH 2DOl'lH 200 pH
BTA20D BTA20D
RCA TRIACS
BTA20C BTA20E BTA20E
-For other RMS current values refer to RCA Application
Note AN·4745.
-Typical values for lamp dimming circuits.
Fig. 12 - Typical phase-control circuit for lamp

dimming, heat control, and universal-
motor speed control.
564 _______________________________________________________________________
TRIACS
a-A Silicon Triacs Features

• 100-A peak surge full-cycle
current ratings
Three-Lead Plastic Types for • Shorted-emitfer center-gate design
• Package design facilitates mounting
The RCA BTA21-series triacs are gate- 80· C and repetitive off-state voltage rati ngs on a printed-circuit board
controlled full-wave silicon switches of 300, 400, and 500 volts.
utilizing a plastic case with three leads to TERMINAL DESIGNATIONS
The BTA21-series triacs are characterized
facilitate mounting on printed-circuit for 1+,111- gate-triggering modes only and MTI
boards. They are intended forthecontrol of / MT2
should suit a wide range of applications
ac loads in such applications as motor ~l
0 i
controls, light dimmers, heating controls,
and power-switching systems.
that employ diac or anode on/off triggering.
All these types are supplied in the JEDEC
MT2
(FLANGEI f
These devices are designed to switch from
an off-state to an on-state for either polarity
of applied voltage with positive or negative
TO-220AB VERSAWATT plastic package.
The plastic package design provides not
only ease of mounting but also low thermal
BOTTOM VIEW
GATE
r-
impedance, which allows operation at high 92:C5-Z7718
gate-triggering voltages. They have an on- case temperatures and permits reduced
state current rating of 8 amperes at a TC of JEDEC TO-220AB
heat-sink size.
Fig. 1 - Principal voltage-current characteristic.

For Operation with Sinusoidal Supply Voltage at Frequencies up to 50/60 Hz and with
Resistive or Inductive Load. .
BTA21C BTA21 0 BTA21E
VOROM", Gate open, TJ=-65 to 100·e ......... . 300 400 500 V f 10
;;;-
IT(RMS), Te=60·e, 0=360· ................•.... 6 A
For other conditions ..........•............• See Fig. 3
ITSM
60 Hz (sinusoidal), Te=80·e .......... .. 100 A
50 Hz (sinusoidal), Te=60·e ............ . 94 A
CONDUCTION ANGLE
principal voltage ........................ .. See Fig. 4 ~ at + Bill
di/dt
VO=VOROM, IGT=200 mA, tr=0.1 ps ........ 70 Alps
12t (See Fig. 9) Fig. 2 - Power dissipation vs. on-state current.
1=20 ms .................................. .. 55
1=2.5 ms 27
1=0.5 ms 16
IGTM- CASE TEMPERATURE: MEASURED AS

SHOWN ON DIMENSIONAL OUTL.INE
For 1 ps max., See Fig. 5 ................... , 4 A
PGM (For 1 ps max., IGTM oS 4 A, See Fig. 5 , .. ,. 16 W
PG(AV)·· .... " .. " .. " ........................ . 0.35 W CONDUCTION ANGL.E
Tstg* ......................................... .. -65 to 150 'e • 8. + Blit
Te*·············· ...... ·· .. ·· .. ···· .. ···,···, .. -65 to 100 ·e

TT (Ouring Soldering):
For 10 s max. (terminals and case) .......... . 225 ·c
RMS ON-STATE CURRENT [IT(RMS~-9A2CS_15OI7RI

"For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
-For either polarity of gate voltage (V G) with reference to main terminal 1. Fig. 3 - Maximum allowable case temperature
*For temperature measurement reference point, see Oimensional Outline. VS. on~state current.
________________________________________________________________________ 565
TRIACS ____________________________________________________________________

ELECTRICAL CHARACTERISTICS, At Maximum Ratings Unless Otherwise Specified, and
at Indicated Temperature
LIMITS
For All Typel
Except.s Sp clfled
MIN. TYP. MAX.
IOROM·
Gate open, TJ=l00°C. VOROM=Max. rated value •. - 0.1 2 mA
VTM"
iT=30 A (peak). TC=25°C .......•................ - 1.7 2 V -60 -40 -20 20
CASE TEMPERATURE ITel -'C
IHO·
Gate open, Initial principal eurrent=150 mA (de) Fig. 6 - DC holding current vs. case
vO=12 V, TC=25°C ....•..............•......•. - 100 - mA temperature.
For other case temperatures ....... , .............• See Fig. 6
OFF-STATE VOLTAGE lVol'VOROM
dv/dt (Commutating)· GATE OPEN
vO=VOROM, IT(RMS)=8 A,
eommutating di/dt=4.3 Alms, 12S0
gate unenergized, TC=80°C ....... 2 10 - Vips

dv/dt"
VO=VOROM, exponential voltage rise, gate open,
TC=100°C:
BTA21C ..................................... 40 275 -
BTA210 ..................................... 30 250 - Vips 2'"
BTA21E ..................................... 20 225 - 100
IG"'- Mode VMT2 VG '111-1t07RI'

vO=12V(de) 1+ positive positive ... - - 35
RL=12 n mA Fig. 7 - Critical rate-of-rise of off-state voltage
vs. case temperature.
TC=25°C 111- negative negative ... - - 35
For other case temperatures ...................... See Fig. 8
VG"'-
vO=12 V (de), RL =12 n, Modes 1+, 111-
TC=25°C ......•....•.•.... , ...................
For other case temperatures ......................
VO-VOROM, RL-125 n, TC-l00°C ...............
-I I
0.2
1.25
See Fig. 10
-
2.5
-
V
tgt
For VO=VOROM, IGT=80 rnA, tr=O.l ps,
iT=10 A (peak), TC=25°C ......... - 2.2 - ps
R8JC, ............................................. - - 2.2
°CIW
R8JA .............................................. - - 60
CASE TEMPERATURE ITel-·t
eecS-24844
·For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
Fig. 8 - DC gate-trigger current (for rt and 111-
-For either polarity of gate voltage (VG) with reference to main terminal 1.
triggering modes) vs. case temperature.
I •
'''''I AT Tc SHCMN FOR I['RMSI ~.
"" _c
~I ..
I..,,~ ..~.9r--
~I
w
~~ ~.:-
~tl
z
~~~ 2 i!
'i
Iii
•
. t(.t/"'l'~~
....,- 10
a i~
!it!
··
w~
~u
§w • B~
~=
K~
:3' i~
C
~~
2
,
6 8 10 4 fS 8100 2
SURGE CURRENT DURATION- FULL CYCLES
4 6 8 1000
.2CS-,:S758
I.
2 4 • a 2
TIME (11-
.m.
a a 2 . I
t2CS-nT!l7
Fig. 4 - Peak surge on-state current vs. surge Fig. 5 - Gate pulse characteristics for all Fig. 9 - Peak surge on-state current and fusing
current duration. triggering ~odes. current as a function of time.
566 __________________________-------------------------------------------
TRIACS
PRINCIPAL. DC VOLTAGE-ltv
LOAD .12n., RESISTIVE
TRIGGERI"G MODES 1 1+,111-
~r-..J

92CM-337SB
~!50 -25
CASE TEMPERATURE ITe1 _·c "
::OH~
ACINPUT 1.0 V 240 V
Fig. 10 - DC gate-trigger voltage' vs.

temperature.
case
VOLTAGE
Cl
C.
60 HI
0.1 pF
.... V
0.1 pF
.....
80 Hz
0.1 pF
D.1pF
~
a.1pF
100 v 100 V 100 V
"1 100 kCl 2ookO 25. .11
'.'" "'" " ...
R. 2.2 kn • .3kll 3~:,n
'"W '"W
R. 15 kll 15 kO 15 kO
'''W V.W V.W
SNUBBER
NETWORK cs O.068pF O.1IJF 0.1 "F
FOR 8A 200 Y .00 V 400 V
(RMSl"IN-
DUCTIVE RS 1.2kO 1'"
LOAD 'loW 'loW 1'hW
'"
0.1 "F 0.1 pF 0.1 "F
RFI CF" 200 V 400 V 400 V
FILTER LF" 100 pH 200-,,1:1 200
RCATRIACS 8TA21D BTA21D
BTA21C BTA.1E BTA21E
-For other RMS currenl value. rel.r to RCA AppllcaUon
Nola AN-4745.
-'yplcal values lor lamp dimming Clrculls.

_______________________________________________________________________ 567
TRIACS _______________________________________________________________

Features
10-A Silicon Triacs • 11O-A peak surge full-cycle
current ratings
Three-Lead Plastic Types for • Shorted-emitter center-gate design
• Package design facilitates mounting
The RCA STA22-series triacs are gate- 75° C and repetitive off-state voltage ratings
controlled full-wave silicon switches of 200, 300, 400, 500 and 600 volts.
utilizing a plastic case with three leads to These devices are characterized for 1+,111-
facilitate mounting on printed-circuit gate-triggering modes only and should suit TERMINAL DESIGNATIONS
boards. They are intended forthecontrol of a wide range of applications that employ MTI
ac loads in such applications as motor diac or anode on/off triggering. MT2
controls, light dimmers, heating controls, MT2
All these types are supplied in the JEDEC (FLANGEI
and power-switching systems.
TO-220AS VERSAWATT plastic package.
These devices are designed to switch from The plastic package design provides not
an off-state to an on-stateforeither polarity only ease of mounting but also low thermal
of applied voltage with positive or negative impedance, which allows operation at high GATE
gate-triggering voltages. They have an on- case temperatures and permits reduced 92CS-27118
state current rating of 10 amperes at a TC of heat-sink size. JEDEC TO-220AB
(See dimensional oulline "5".)
MAXIMUM RATINGS, Absolute-Maximum Values: Fig. 1 - Principal vOltage-current characteristic.

For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with
Resistive or Inductive Load. BTA22B BTA22C BTA22D BTA22E BTA22M
VOROMO, Gate open, TJ=-65 to 100°C ......... . 200 300 400 500 600 v
IT(RMS), TC=75°C, 8=360° ..................... _ _ _ _ _ _ 10 - - - - - - A
For other conditions ........................ _ _ _ _ _ _ See Fig. 3 _ _ _ _ __
'TSM
(Fig. 1.1)
60 Hz (sinusoidal) TC=80'C ............. _ _ _ _ _ __ 110 A
50 Hz (sinusoidal) TC=80'C ............. _ _ _ _ __ 103 A
principal voltage .......................... _ _ _ _ __ See Fig. 4
di/dt
fULL-CYCLE RMS ON-STATE CURRENT [IT(RMS~-A
VO=VOROM, IGT=200 rnA, tr=O.1 JJs ....... . 70 AIl'S 92CS- 337~O
12t (See Fig. 11) Fig. 2 - Power dissipation vs. on-stata current.
1=20 ms .................................... _ _ _ _ __ 66
t=2.5 ms ................................... _ - - - - 33
1=0.5 ms ................................. .. 19
'GTM-
For 1 JJs max., See Fig. 5 .................. .. 4 A
PGM (For 1 JJs max., IGTM :5 4 A, See Fig. 5 ..... _ _ _ _ _ __ 16 W
~~~1V~::::::::::::::::::::::::::::::::::::::::: _____ 0.35

-65 to 150
W
·C
·C
TC*··· .. ·· ........... · ......................... _ _ __ -65 to 100
For 10 s max. (terminals and case) .......... . 225 ·C
RMS ON-STATE CURRENT [IT!RMSJ]-A

-For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
iFor either polarity of gate voltage (VG) with reference to main terminal 1. Fig. 3 - Maximum allowable case temperature
:t:For temperature measurement reference point, see Dimensional Outline. vs. on-state current.
568--________________________________________________________________
TRIACS
ELECTRICAL CHARACTERISTICS, At Maximum Ratings Unless Otherwise Specified, and SUPPLY FREQUENCY· 50/60 Hl SINE WAVE
LOAD: RESISTIVE
at Indicated Temperature CASE TEMPERATURE ITCI~80'C
120 RMS ON-STATE CURRENT (ITIRMSI]aIOA
LIMITS ;;;1 GJT~ ck.TROL MAY BE LOST
For All Types ~gK)O'''':''i;;:-t-H-t----t-t~~~liWfJr~E~ii~.TELY
CHARACTERISTIC
Excepl as Specified
MIN. TYP. MAX.
UNITS D..~
~~
i§1I!
30 6of-+-H+t1"~;:-r
OVERLOAD MAVNOTBE RE-
=
STATE
10ROM·
Gate open, TJ=l 00° C, VOROM=Max. rated value .. - 0.1 2 mA
!~
~~~f-+-H+t--r-t-~~~-t-rt1
VnJ(
.o,f-+-~-t-t-+-t-rtt--r-t-rti
iT=30 A (peak). TC=25°C (See Fig. 6) .•.......... - - 1.7 V
IHO· .. 68 ,0 4 6 8 ,00 2 .. 68,000
Gate open. Initial principal current=150 mA (dc) SURGE CURRENT DURATlON- FULL CYCLES
92CS-357!11
vO=12 V. TC=25°C ............................ - 15 30 rnA Fig. 4 - Peak surge on-state current vs. surge
For other case temperatures ...................... See Fig. 7 current duration.
dv/dt (Com mutating)"
vO=VOROM, IT(RMS)=10 A.
eommutating di/dt=4.44 Alms,
gate unenergized, TC=75°C ....... 4 10 - VIps
dv/dt·
VO=VOROM, exponential voltage rise, gate open,
TC=100°C:
BTA22B ................................... 100 300 -
BTA22C ................................... 85 275 -
"BTA220 ................................... 75 250 - VIps
BTA22E ................................... 65 225 -
BTA22M ................................... 60 200 -
IGl"- Mode VMT2 VG
vO=12V(de) 1+ positive positive ... - 10 25 Fig. 5 - Gate pulse c;'aracteristics for al/"
triggering modes.
RL=12 n
TC=25°C 111- negative negative ... - 15 25
mA
For other ease temperatures .......................
I positive negative ... - 20 60
111+ negative positive ... - 30 60
Fo r other ease tern peratu res ...................... See Figs. 9 & 10
VGT"-
vO=12 V (de), RL =12 n,
TC=25°C ......................................
For other ease temperatures ......................
- \1.25 I
See Fig. 12
2.5
V
vO=VOROM, RL=125 n, TC=100°C ............... 0.2 - -

tgt
For VO=VOROM, IGT=80 mA, t r =O.l ps,
iT=10 A (peak), TC=25°C (See Fig. 13) ......... - 1.6 2.5 ps
ROJC .............................................. - 2.2
°CIW
Fig. 6 - On-state"current vs. on-state voltage.
ROJA .............................................. - - 60
·For either polarily of main lerminal 2 vollage (VMT2) wilh reference 10 main terminal 1.
-For eilher polarily of gale vollage (VG) wilh reference 10 main terminal 1.
- 2-
·c
Sl2CS·357!13
Fig. 7 - DC holding current vs. case
temperature.
_______________________________________________________________________ 569
TRIACS ____________________________________________________________________

OFF-STATE VOLTAGE IVol=VORON
GATE OPEN
;t
.250
0, 1000
tll=
.~
:5~ 1'I'P1C4(
'00
250
E
5
20 40 80
CASE TEMPERATURE (Tc)- 0c;
CASE TEMPERATURE ITC1-·C
Fig. 8 - Critica' rate-of-rise of off-state voltage
VB. case t~mperafu,e.
Fig. 9 - DC gate-trigger current (for ,+ and 111- Fig. 10' - DC gate-trigger current (for ,- and 111+
triggering modes) vs. case temperature. triggering modes) vs. case temperature.
PRINCIPAL DC VOLTAGE-12V
LOAD "2n, RESISTIVE
3 TRIGGERING MODES: ALL
10 -75 -25
4 6 8, 2 4 6 8'0 CASE TEMPERATURE (Tel _·C
TIME (1)- rns
Fig. 11 - Peak surge on-state current and fusing Fig. 12 - DC gate-trigger voltage vs. case
Fig. 13 - Turn-on time vs. gate-trigger current.
current as a function of time. temperature.
ACINPUT 120 V 240 V 240 V

VOLTAGE 60 Hi: 80 Hz: 50 Hz
c.
~..:.Fv ~;:r.
0.1 J1F
400 v
Co 0.1 pF 0.1 pF 0.'''''
'00 V '00 V .00 V
R. 100 kO 200 kO 250 kO
'.W '.W '.W
R2 2.2 kO 3.3 kO 3.3 kO
'hW 'hW 'hW
R. 15 kO 15 k(l 15 kO
'hW 'hW 'hW
L..r-...J SNUBBER
NETWORK Cs O.OB8pF O.1IJF O.1pF
FOR .DA 200V 400 V 400 V
SNuBBER NETWORK FOR INDUCTIVE (RMSI"IN·
(dv/dt) CHARACTERISTIC IS EXC~EDED.
DUCTIVE RS 1.2 kO • kn nn
LOAD 'hW 'hW 'hW
92CM-33755 0.'"" 0.'"" 0.'""
RFI CF" :zoo y 400 V 400 V
FILTER LF" '00"" 200",,- 200-","-
RCA TRIACS IITA228 BTA22D BrA22D
BTA22C BTA22E BTA22E
-For othar RMS current value. refer to RCA Application
Not. AN-4745.
-Typical ...alue. lor 'amp dimming circuit••

570
TRIACS
12-A Silicon Triacs Features

• 115-A peak surge full-cycle
current ratings
•. Shorted-emitter center-gate design
Three-Lead Plastic Types for • Low switching losses
Power-Control and Power-Switching Applications • Package design facilitates mounting
The RCA BTA23-series triacs are gate- 70° C and repetitive off-state voltage ratings MTI
controlled full-wave silicon switches of 200, 300, 400, 500 and 600 volts.
"~'''i? !!
utilizing a plastic case with three leads to These devices are characterized for 1+,111-
facilitate mounting on printed-circuit MT2
boards. They are intended forthecontrol of
ac loads in such applications as motor
gate-triggering modes only and should suit
a wide range of applications that employ
diac or anode on/off triggering.
EEl: 5.-
, 26l:/
controls, light dimmers, heating controls, BOTTOM VIEW I
and power-switching systems. All these types are supplied in the JEDEC GATE
TO-220AB VERSAWATT plastic package. 92C5-27718
These devices are designed to switch from The plastic package design provides not JEDEC TO-220AB
an off-state to an on-state for either polarity only ease of mounting but also low thermal
of applied voltage with positive or negative (See dimensional outline "S".)
impedance, which allows operation at high
gate-triggering voltages. They have an on- case temperatures and permits reduced
state current rating of 12 amperes at a TC of heat-sink size.
Fig. 1 - Principal yoltage-current characteristic.

'.

For Operation with Sinusoidal Supply Voltage at Frequencies up to .50/60 Hz and with
Resistive or Inductive Load.
BTA23B BTA23C BTA23D BTA23E BTA23M
VOROM", Gate open, TJ=-65 to 100°C ........ .. 200 300 400 500 600 V
IT(RMS), TC=700 C, 11=360° ..................... _ _ _ _ _ _ 12 A
For other conditions ........................ See Fig. 3 ______
ITSM (See Fig.13)
60 Hz (sinusoidal) ....................... _ _ _ _ _ _ 115 _ _ _ _ __ A
50 Hz (sinusoidal)....................... 108 _ _ _ _ __ A
principal voltage .......................... ______ See Fig. 4 _ _ _ _ __
di/dt Fig. 2 - Power dissipation as a function of on-
VO=VOROM, IGT=200 rnA, tFO.l IlS ........ _ _ _ _ _ _ 70 state current.
12t (See Fig.13)
t=20 ms ................................... _______ 73
t=2.5 ms . .. .. .. . . .. .. .. .. .. . . .. .. .. .. .. . . .. 36
t=0.5 ms........... ........................ 20
IGTM-
For lOllS max., See Fig. 8 .................. 4 A
PGM (For 1 IlS max., IGTM :s 4 A, See Fig. 8) ... 16 _ _ _ _ _ __ W
PG(AV) ......................................... _ _ _ _ _ _ 0.2 W
~~~~:::: :::::::::::::::: /:::::::::::::::::::::

=:~:: :~~
°G
°c
For 10 s max. (terminals and case) .....•..... _ _~_ __ 225 °C
"For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal I.
-For either polarity of gate voltage (VG) with reference to main terminal 1. Fig. 3 - Allowable case temperature as a
*For temperature measurement reference point, see Dimensional Outline. function of on-state current.
___________________________________________________________________ 571
TRIACS _______________________________________________________________________

ELECTRICAL CHARACTERISTICS, At Maximum Ratings Unless Otherwise Specified, and
at Indicated Temperature
LIMITS
For All Types
Except as Specllled
MIN. TYP. MAX.
'OROM"
Gate open, T J=1 00° C, VOROM=Max. rated value .. - 0.1 2 rnA
VTM"
iT=30 A (peak), TC=25°C ........................ - - 1.6 V
IHO"
92CS-'37!1'
Gate open, Initial principal eurrent=150 rnA (de) Fig. 6 • DC holding current for either direction
vO=12 V, TC=25°C ............................ - 15 30 rnA of on-state current VS. case
dv/dt (Commutating)" temperature.
VO=VOROM, IT(RMS)=12 A,
OFF-STATE VOLTAGE (VOI:VOROM
commutating di/dt=5.33 Alms, GATE OPEN
gate unenergized, TC=70°C ........ 4 10 - Vips

dv/dt"
~
1250
vO=VOROM, exponential voltage rise, gate open,

TC=100°C: ~~ 1000
BTA23B .....................................
~~
100 300 - .~
~: 1"YI>/C41...'
BTA23C ..................................... 85 275 - '00
BTA230 ..................................... 75 250 - Vips
BTA23E ..................................... 65 225 -
BTA23M ..................................... 60 200 -
CASE TEMPE:RATUR[ {Tc)_GC
'Gr'- Mode VMT2 VG
v0=12 V (de) 1+ positive positive ... - 10 25 Fig. 7 - Critical rate-of-rise of off-state voltage
RL=12 n as a function of case temperatura.
TC=25°C 111- negative negative ... - 15 25

rnA
I positive negative ... - 20 60
111+ negative positive ... - 30 60
VGr'-
vO=12 V (de), RL =12 n,
TC=25°C ...................................... - 1.25 2.5
V
VO-VOROM, RL -125 n, TC-100°C ............... 0.2 - -
tgt
For vO=VOROM, 'GT=80 rnA, tr=0.1 flS,
iT=10 A (peak), TC=25°C (See Fig. 12) ......... - 1.6 2.5 flS
ROJC····· ......................................... - - 2.2
°C/W
ROJA .............................................. - - 60
Fig. 8 - Gate-pulse characteristics for all
triggering modes.
140 SUPPLY FREQUENCY: 50/60 Hz SINE WAVE

PRINCIPAL DC VOLTAG(ol2.V
LOAD: RESISTIVE 1 LOAD. l2 .n., RESISTIVE
CASE TEMPERATURE ITcl~80oC
120
~ AM' ON-STATr r"ENT [~TI~MTJ1·'2A. I. • ,U
wI
~ g~~fN~O:J~?~~t~I~~~~T
>.IDD
E~
~
~r
FOLLOWING SURGE
CURRENT INTERVAL.
OVERLOAO MAY NOT BE RE-
~!j 80 PEAlED U~TrL JUNCTION
~i'-..
TEMPERATURE HAS RE-
f!j~ TURNED TO STEADY-STATE
~~ 60
RATED VALUE
~B 50", "- .....

~~ 40
~~
~o 20
:---..
0
2 4 , . 10
2 4
SURGE CURRENT OURATION- FULL CYCLES

, .
100
2 4 , .1000 POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE {VTl-V
92CS-33747
CASE TEMPERATURE (Tc'_·C
Fig. 5 - On-state current vs. on-state voltage. Fig. 9 - DC gate-trigger current (for 1+ and 111-
Fig. 4 - Peak surge on-state current as a triggering modes) vs. case temperature.
function of surge current duration.
572 _____________________________________________________________________
TRIACS

PRINCIPAL DC VOLTAGE·l2V
LOAD -'2n, RESISTIVE
3 TRIGGERING MODES: ALL
I 2
o
-75 -'0 -25
CASE TEMPERATURE iTcl-·C 100
GATE-TRIGGER CURRENT IIGTI-IilA
CASE TEMPERATURE (TC1--C
Fig. 10 - DC gate-trigger current (for 1- and 11/+ Fig. 11 - DC gate-trigger voltage vs. case Fig. 12 - Turn-on time vs. gate-trigger current.
triggering modes) vs. case temperature. temperature.
AT Te SHOWN FOR ITIRMSI
, " 10
, " 100
TIME (Il-ms
Fig. 13 - Peak surge on-state current and fusing

RFI FILTER
r------l
LOAD
~ (, ~l!{CI! LF CF i ~~~loUET
(oi:.'!
.....'V'R,,'v-.-.A,f- '1 ~l 0 '
l4III-J\\f-.l , I
'\!v ~--~;~~~CTIVE
DIAC Cl Rs
CONNECT POINTS C AND
D' TO TERMINALS C AND
LOADS
rl2w D. RESPECTIVELY
c, ~ _~____~I2~O~V__4-~2~4~O~V___
Cs O.068fLF/200V Q.I,..F/400V
--+-------~-------
CSo,1 Rs 1.2 Kil I K!l.
RFI FILTER
AC RCA
INPUT C1 C2 Rl R2 R3 LF' CF' TYPES
VOLTAGE (typ.) (typ.)
120 V 0.1 ~F 0.1 ~F 100 Kn 2.2 Kn 15 Kn 0.1 ~F BTA23B,C
100 ~H
60 Hz 200 V 100 V }\VI! }\W }\\(II 200V
240 V 0.1 ~F 0.1 ~F 250 KH 3.3 Kn 15 Kn 0.1 ~F BTA23D,E
200~H
50 Hz 400 V 100 V 1W Y:W YZW 400 V
240 V 0.1 ~F 0.1 ~F 200 Kn 3.3 KH 15 Kn 0.1 ~F BTA23D,E
200 ~H
60 Hz 400 V 100V lW %W YZW 400 V
*Typical values for lamp-dimming circuits. 92CS-33761

dimming, heat control, and universa/-
_____________________________________________________________________ 573
TRIACS _______________________________________________________________
SC141, SC146 (T2800) Series
6-A and 10-A Silicon Triacs Features:

• 80 and 120-A peak surge full-cycle current
Three-Lead Plastic Types for Power-Control
ratings
and Power-Switching Applications
• Shorted-emi1ter center-gate design
The RCA-SC141 and SC146 series triacs are of applied voltage with positive or negative
gate-controlled full-wave silicon switches • Low thermal resistance
gate triggering voltages. They have an on-
utilizing the RCA VERSAWATT plastic state current rating of 6-A at T C = 75°C • Glass-passivated chip for stab.ility
package (JEDEC TO-220AB) with three leads (SC141 series) and 10-A at TC = 80°C • Package design facilitates mounting on a
to facilitate mounting on printed-circuit (SC146 series) and repetitive off-state voltage printed-circuit board
boards. They are intended for the control of ratings, of 200, 400, 500, and 600 volts. The TERMINAL CONNECTIONS
ac loads in such applications as motor con- plastic package design provides not only ease
trols, light dimmers, heating controls, and of mounting but also low thermal impedance,
power-switching systems. which allows operation at high case tempera-
These devices are designed to switch from tures and permits reduced heat-sink size.
an off-state to an on-state for either polarity
92CS-27718
MAXIMUM RATINGS. Absolute-Maximum Values: JEDEC TO-220AB

SC141B SC141D SC141E SC141M
SC146B SC146D SC146E SC146M (See dimensional oulllne "S"_)
VDROM - TJ=-~O'0100oC. 200 400 500 600 v
'TIRMS) e = 360; ° _____ 6
ForSC141 ser~es, TC '" 75 0 C A
For SC146 senes. TC = 80 C 10 _ _ _ _ __
A
For other conditions ______ See Fig. 4 _ _ _ __
'TSM:
For one full cycle of applied principal voltage, at
current and temperature shown above for IT(RMS): SC141 Series SC146 Series
60 Hz (sinusoidal) . . . . . . . . _ 80 120 A
50 Hz (sinusoidal) . 75 110 A
For more than one cycle of applied principal voltage ______ See Fig. 5 _ _ _ __
di/d,
vD = V DROM ' 'GT = 200 rnA, 'r = 0.1 jJ.S 70 A/jJ.s Fig. 1 - Principal voltage-current characteristic.
12, [A' TC shown for 'TIRMS)' half-sine wave] ; SC141 Series SC146 Series
t= 10ms. 25 70 A 2s
2.5 ms 17 45 A 2s
O.5ms 10 25 A 2s
'GTM-
For 1 /-IS max. 4 A
PGM IFor 1 jJ.S max .. 'GTM 0(; 4 A) 10 W

PG1AV ) . 0.5 W
T stg '0
-40 125 °c
TC '0
-40 100 °c
TT (During soldering for 10 s max.1 230 °c
• For either polarity of main terminal 2 voltage (V MT 2) with referenc~ to main terminal 1 .
• For either polarity of gate voltage (V G' with reference to main terminal 1.
Ii RMS O;-STATE cu tRENT [IT(RMS~-A 92CS-31336
Fig. "2 - Power dissipation as a function of on-state

current for SC141 series.
20
•
l
• ~ 15
RMS LIMIT
SCI46 SERIES
i .
~
"ffi 10 B8
SCI46 SERIES
SCl41 SERIES ~
o
I: >
j eo
5 10 15 20
RMS ON-STATE CURRENT [IT(RMS)]-A. 92C5-31B5
a 2345678
RMS ON-STATE CURRENT [tTtRMS)J-A
to
i 0
o I 2 3 4 !I 6 7 e ,9 10
92CS-liln4
RMS ON-STATE CURRENT [~T(RMS~-A 92CS-31337
Fig. 4 - Maximum allowable case-temperature as a Fig. 5 - Maximum allowable case-temperature
Fig. 3 - Power dissipation as a function of on-state function of on-state current for as a function of on-state current for
current for SC146 series. SC141 series. SC 146 series.
574
TRIACS
ELECTRICAL CHARACTERISTICS '00

At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperatures IIO'i--t---t
LIMITS
CHARACTERISTIC For All Types
UNITS
Except as Specified
Min. Typ. Max.
IOROM-
VOROM = Max. rated value, TC = 25°C - - 0.1 mA
= 100°C - - 0.5
vTM- 30
T C = 25° C, iT = 8.5 A (peak SC141 series - - 1.83 6 8 10 6 8 100
V SURGE CURRENT DURATION-FULL CYCLES
= 14 A !peak) SC146 series - - 1.65 92CS-lllM
Fig. 6 - Peak surge on-state current as a .
IHO- function of surge current duration
for SC 141 serie.s.
Gate open, initial principal current = 500 mA (de)
Vo = 12 V, T C = 25° C - - 50
= _40°C - - 100
IL-
RGK = 100 n, tw = 50 lIs, tr = tf = 5 lIs, f = 1 kHz, mA
TC = 25°C Mode VMT2 VG
1+ + + - - 100
111- - - - - 100
1- + - - - 200
TC= _40°C 1+ + + - - 200
111- - - - - 200
1- + - - 400 '0
, '0
dv/dt- (Commutating) TIME (tj-ms 92CS-313~2

vo = VOROM, IT(RMSI = Max. rated value, current as a function of time for
di/dt = 3.2 Alms, TC = 80° C SC141 series 4 - - SC141 series.
di/dt = 5.4 Alms, TC = 80°C SC146 series 4 - -
VIlIs
dv/dt- (Off·State) '20 SUPPLY FREQUENCY: 50/60 Hz SINE WAVE
vo = VOROM' TC = 100°C, Exponential voltage rise IIO't.\-=+---+ LOAO RESISTIVE
\ \ 6OH, RMS ON-STATE CURRENT [ITIRMSil-
SC141 series 30 100 - _
~4I:
100 \\"\ RATED VALUE AT SPECIFIED CASE
TEMPERATURE, TC
SC146 series 100 250 -
iGT- vO= 12V (de)

-I
1=- 9°!iOH
~~
~~8D
',,,,
~
"-
TC = 25°C RL-n Mode VMT2 VG ~r ,
100 1+ + + - - 50 3~10- "
100 111- - - - - 50 mA ~B60

III~
GATE CONTROL MAY
LOST DURING AND IMMEOIATE~
BE~ 1---- ---
50 1- + - - - 50 ~t! 5 FOLLOWING SURGE CURRENT .' -.............
- T'----=-+--J--J-l
~'? ~~TE~RL6AA~' MAY NOT BE
~ 40 REPEATED UNTIL JUNCTION
r--
...........
TC=-40°C 50 1+ + + - - 80 TEMPERATURE HAS RETURNED
---\--
50 111- - - - - 80 30 10 STEADY-STATE RATED VALUE.

2 4 5 8 10 6 8 100
25 1- + - - - 80 SURGE CURRENT DURATION-FULL CYCLES
92CS-;,o3S2
VGT" Vo = 12 V (de) Fig. 8 - Peak surge on-state current as a

function of surge current duration
TC = 25°C RL-n Mode VMT2 VG for SC146 series.
100 1+ + + - - 2.5
100 111- - - - - 2.5
50 1- + - - - 2.5 V
TC=-4Oo,C 50 1+ '+ + - - 3.5
50 111- - - - - 3.5
25 1- + - - - 3.5
• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
• For either polarity of gale voltage (VG) with refer.enca to main terminal 1.
, TIME Itj-ms
. ,. '0 92CS-5IlSt
Fig. 9 - Peak surge on·state current and fusing
current as a function of time for
SC146 series.
575
TRIACS ____________________ ~ ___________________________________________

ELECTRICAL CHARACTERISTICS (Cont'd)
At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperatures
LIMITS
For All Types
Except as Specified
Min. Typ. Max.
VGO-
vO=VOROM, RL =lkn, TC= 100°C (For ali
triggering modes) 0.2 - - V
tgt o 0.5 I .. ~ l l.S 3 3.~
POSITIVE OR NEGATIVE DC GATE- TRIGGER CURRENT fI.G~-A
vo =VOROM, IGT = 80 rnA, tr =0.1 p.s, iT = 25A (peak), . 92CS-30:S'3
TC= 25°C - 1.6 2.5 p.s Fig. 10 - Gate pulse characteristics for all
triggering modes.
Thermal Characteristics
::;~14! series'
ROJC SC146 series - - 3.0
2.2
ROJA - - 75
°CIW
ROJC(ac)*
Ouring ac current conduction SC141 series - - 2.22
SC146 series - - 1.5
• For either polarity of main terminal 2 voltage (VMT2J with ·reference to main terminal 1..
• For either polarity of gate voltage (VGJ with reference to main terminal 1.
• This characteristic is useful in the calculation of junction-temperature rise above T C for ae current
oenduction and applies for a 50 or 60 Hz full sine wave of current. It can be calculated with the
following formula:
where: TJ{max.) = maximum junction temperature
. TJhnax.)-TC 0.2 0.& 1.0 1.4 1.8 22: 3D 3.. 3.. z.e
Apparent thermal resistance = - - - - - TC = case temperature
INSTANTANEOUS ON-STATE VOLTAGE 1Vr'-;:cs_ 3133.
PTfAV) PT(AV) =average on-state power
Fig. 11 - On-state current 8S a function of on-state
voltage for SC141 series.
BO
INITIAL ON-STATE CURRE"'TIITI.~OOmA
.........
I'...
.;60
1
1 .........
r--.....
I.........
~
z
w I'--.
a ""
~
40
~ PRINCIPAL. DC VOLTAGE-12V
TC· 25"C LOAD RESISTIVE MODE
! lOt--- - r- . :ggg II:~
1-
-
i
II
20t--- - -
TC··4 O"C
:K):g
50.
50a
I'
111-
-
0.5 I 1.5 2 2.5 S 5.5 4 4.5
_OIl
-40 -)0 -20 -10 0 10 20 :so
10
40 30 ~ 10- 0
I I I
10 W 30 ~ ""
2Si
~
I rI
INSTANTANEOUS ON-STATE VOLTAGE (YTI-Y CASE TEMPERATURE (Tcl--C CASE TEMPERATURE ITc l - - C 92CS-30359
9tCS-31:sn 92C5-303!i8
Fig. 12 - On~state current al,a function of on-stllte Fig. 13 - DC holding current BS a function of case Fig. 14 - DC gate trigger current as a function of
voltage for SCI46 'eries. ttJlTlperature. case temperature.
,
:t
,p 3
r-- .......... I III
;;; .......... I 2
~ 2. .......... ~ Jcl~,1 J'AI~S

g
, I
l'
1
. 2
J..lI.l.,.l
~
N
PRINCIPAL. DC VOL.TAGE -12 V
TC'25-C LOAD RESIST!VE MODE
,. t:1.5
i
~,......
Ii 'V
roon
~ 1.5 rOOD 1It- -
50a I'
Z TC:-40·C 50. I'
~ I 50a
":=- -
~
2jD
I o.~ I I I i I ~
~ O.
o 2. 4 6 8 10 12 14 16 18 20
~
°
·40 "0 ·'0 -10
CASE TEMPERATURE "cl--C
10 20 30
Jo. 50 60
0
2 4 ..
10
2
102
2 • 00 ...
103
NUMBER OF SINE WAVE CURRENT CYCLES
I , .00
10 4
GATE PULSE WIDTH It6p l-,.s 92C5-30360 92C5-313!i3
Fig. 15 - Peak gattJ trigger currtJnt as a function of F;g. 16 - DC gate-trigger voltage 8S a function of Fig. 17 - Thermal impedance as a function of sine-
gat. puis. width. case temperature. wave current cycles.
576 ______________ ~ _____________________________________________________
____________________________________________________________________ TRIACS
T2850 Series
8-A Isolated-Tab Silicon Triacs Features:

• Internal isolation
Three-Lead Plastic Types for Power-Control • 100-A peak surge full-cycle current
and Power-Switching Applications ratings
• Shorted'emitter, center·gate design
The RCA-T2850 series triacs are gate-con- state current rating of 8 amperes at aTe of • Low switching losses
trolled full·wave silicon switches utilizing a 75° C and repetitive off-state voltage ratings • Low thermal resistance
plastic case with three leads to facilitate of 100, 200, 400, 500 and 600 volts. • Package suitable for direct
mounting on printed·circuit boards. They mounting on heat sink
are intended for the control of ac loads in • Glass-passivated junctions
The T2850-series types employ an ISOWATT
such applications as motor controls, light
package, a plastic case with three leads that
dimmers, heating controls, and power·
are electrically isolated from the mounting
switching systems. flange. Because of this internal isolation, the TERMINAL CONNECTIONS
These devices are designed to switch from triac can be mounted directly on a heat sink,
an off·state to an on-state for either polarity without any insulating hardware; therefore
of applied voltage with positive or negative heat transfer is improved and heat-sink size
gate·triggering voltages. They have an on· can be reduced.

For Operation with Sinusoidal Supply Voltage st Frequencies up to 50160 Hz and with Resistive or
Inductive Load. T2850A T2850B T2850D T2850E T2850M JEDEC TO-220AB
VOROMe TJ = -65 to 1000 C ................ 100 200 400 500 600 V
(See dimensional ouliine "S".)
IT(RMS) T C = 750 C, e = 3600 . . . • . . . . • . . . . . B A
For other conditions •........•..... _ _ _ _ See Fig. 3
ITSM
_ _ _ _ 100 A
60 Hz (sinusoidal), T C = 750 C ......... .
_ _ _ _ 85
50 Hz (sinusoidal), T C = 750 C ......... . A
For more than one cycle of applied principal voltage Se. Fig. 4
di/dt _ _ _ _ _ 70 _________
vo c VOROM,IGT c 200 rnA, 'r = 0.1 ,,~ ..... A/"s
12, (A, T C shown for ITIRMS)' half-.ine wave]:
See Fig. 5
,=20ms ............................ .. 55 A2s
______ 28
= 2.5 ms ....•......................... A2s
_ _ _ _ _ 16 A2.
= 0.5 m•..............................
IGTM"
For 1 IlS max., See FIg. 6 ................ . 4 A
_ _ _ _ 16
P GM IFor 1 "s max., IGTM .;;; 4 AI, See Fig. 6 .. . W
PG(AV) ................................. . _ _ _ _ 0.2 W
T stg ................................... . _ _ _ -65 to 150 °c
_ _ _ -65 to 100 Fig. 1 - Principal voltage-current characteristic.
TC .................................... .
225 _ _ _ _ _ __
°c
T T (During soldering for 10 s max.) .......... . °c
-For either polarity of main ter~inal 2 voltage (V MT2 ) with reference to main terminal 1.
-For either polarity of gate voltage (V G) with reference to main terminal 1.
CYCLE RMS ON-STATE

'0
CUAAENT~TI~~~Js-=-t~OI8~2
6 B 10
AlliS ON· STATE CURRENT [ITIRMSi]-A
12
La
... 100
SURGE CURRENT OURATION-FULL CYCLES
1000
92C$-~4e
Fig. 3 - Allowable case temperature as a Fig. 4 - Peak surge on-state current as a

Fig. 2 - Power dissipation as a function function of on-state current. function of surge current duration.
of on-state current.
________________________________________________________________________ 577
TRIACS ________________________________________________________________ ~ _________
T2850 Series
At Maximum Ratings Unless Otherwise Specified and at Indicated Temperatures
LIMITS u
CHARACTERISTIC
For All Types
-++--I---jz ~i
Except as Specified OOITS ~I
"=
Min. Typ. Max. ~05~
IDROM- l-f+-+--je ~ §
TJ ° 100°C. V DROM ° Max. rated value - 0.1 2 mA 1+-+-14 ~~
~.
vTM-
iT ° 30 A (peakl. T C ° 25°C. See Fig. 7 - 1.7 2 V
IHO- z
TIME (I}-II'I'
'" e. 11 10 '"
92CS-30831
vD ° 1 2 V. T C ° 25° C - 15 30 mA Fig. 5 - Peak surge on-state current and fusing
For other case temperatures See Fig. 7 current as a function of time.
dv/dt (Commutating)-·
V/lls
vD ° VDROM' IT(RMS) ° 8A, di/dt ° 4.3 Alms.
gate unenergized, T C ° 75°C 4 10 -
dv/dt (Off·State)-
vEl ° VDROM, exponential voltage rise. gate open.
TCol00°C
T2850A. 125 350 -
T2850B. 100 300 -
T285OD. 75 250 -
T2850E . 100 300 -
T2850M. 75 250 -
V/lls
IGT-
vD=12VdcRL=12n TC = 250 C "0_01 Z .. 6 .0.1 Z • e 't.O
POSITIVE OR NEGATIVE DC GATE-TRIGGER CURREHT'~~:_~~;'!5
Mode VM;r2 VG
1+ Positive Positive - 20 25 Fig. 6 - Gate-pulse characteristics for all
111- Negativel Negative triggering modes.
- 15 25 mA
1- Positive Negative - 20 60
111+ Negative Positive - 30 60
For other case temperatures See Figs. 10 & 11
VGT-·
vb = 12 V dc, R L = 12 n. T C = 25°C - 1.25 2.5
vD = VDROM. RL = 125 n, TC = 100°C 0.2 - - V

For other case temperatures See Figs. 12
tgt
vD = VDRQM. IGT = 160 mA, tr = 0.1 IlS. iT = lOA (peak).
TC = 25 C
-
- 1.6 2.5
- 3.1
IlS
°CIW
!!
R8JC
ROJA - - 60 °C/W
• For either polanty of maIO termmal,2 voltage (V MT2' with reference to maIO terminal 1. o Z.•
POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGEC_Tl-y
• For either polarity of gate voltage (VGI with reference to main terminal 1. IICS~IIIO'IIIII'
• Variants of these devices having dv/dt characteristics selected specifically for inductive loads are available Fig. 7 - On state current as a function of
on special order: for additional information, cootact your RCA Representative or your RCA Distributor. on-state voltage.
578 ________________________________________________________________________
____________________________________________________________________ TRIACS
T2850 Series
OFF-STATE VOLTAGE (Vol-VORO..
PRII'OCIPAL DC VOLTAG[0I2:Y
GATE OPEN LOAD. l2 n, RESISTIvE
a 1250
~ 1000
"0
"I'pre",
000
~
.0 60 80 100
Fig. B - DC holding current vs. case temperature. Fig. 9 - Typical critical rate-ol-rise 01 ollstate Fig. 10 - DC gate-trigger current (for /+ and
voltage as 8 function of case temperature. 111- triggering modes) vs. case temp-
perature.
PRINCIPAL DC VOLTAGEal2V
LOAD. 12.n. RESISTIVE
TRIGGERING MODES; ALL
'1 .,
I 2
C,
~
C, SNU88ER NETWORK fOR INDUCTIVE
(4_/4tl CHARACTERISTIC IS EXCEEDED
ACINPUT 120V 240 V 240 V

VOLTAGE 60 Hz 60 Hz 50 Hz
o
-75 -so Cl D.l p.F D.l p.F D.l p.F
CASE TEMPERATURE lTel _·C 2DOV 400 V 4DDV
92SS-391Gltl
Fig. 11 - DC gate-trigger voltage vs. case C2 D.l p.F D.l p.F D.l p.F
lDOV lDOV lDDV
temperature.
Rl lDOkH 200kH 250 kH
1/2W 1/2W 1/2W
1/2W lW lW
R2 2.2kH 3.3 kH 3.3kH
1/2W 1/2W 1/2W
R3 15 kH 15 kn 15 kH
1/2W 1/2W 1/2W
SNUBBER
NETWORK Cs 0.068 p.F 0.1 p.F 0.1 p.F
FOR8A 200 V 400 V 400 V
IRMS) IN·
DUCTIVE RS 1.2kH 1 kSl 1 kSl
LOAO 1/2W 1/2W 1/2W
RFI 0.1 p.F 0.1 p.F 0.1 p.F
CF- 200 V 400 V 400 V
FILTER LF- 100p.H 200~H 200p.H
T2850B
RCA TRIAC
T2850D T2850D
T2850E
T2850M
• Typical values for Lamp dimming circuits.
.2:CS-I7062. Fig. 13 - Typical phase-control circuit for lamp

Fig. 12 - Turn-on time vs. gate-trigger dimming, heat control, and universal-
current. motor speed control.
________________________________________________________________________ 579
TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series
(Includes 2N5567-2N5574)
Features:
10-A and 1S-A Silicon Triacs • dl/dt Capability = 150 AIl's
For General Purpose AC Power Switching • Shorted-Emitter, Center-Gate Design
These RCA triacs are gate-controlled, These triacs are intended for control of • Low On-State Voltage at High
fullwave silicon ac switches. They are ac loads in applications such as heating Current Levels
designed to switch from an off-state to controls, motor controls, arc-welding • Low Thermal Resistance
an on-state for either polarity of applied equipment, light dimmers, and power
voltage with positive or negative gate switching systems.
triggering voltages.
MTI
MT2
2N5667 T4100F T4101E 92CS-Z7735RI

2N5568 T4100E T4101F T4120B T4121B
2N5571 T4100M T4101M 2N5669 T4110F T4111F T4120D T4121D
2N5572 2N5570 T4110E T4111F T4120E T4121E
Pre.-Flt Type. 2N5573 T4110M T4111M T4120F T4121F
2N5574 T4120M T4121 M
(See dimensional outline "Q") Stud Type.
l.ol,ted-Stud Type.
(See dimensional outline "W") (See dimensional outline "Z")

For Operation with Sinusoidal Supply Voltage at Frequencies up to T4100F 2N5567 2N5568 T4100E T4100M
50(60 Hz and with Resistive or Inductive Load. T4101F 2N5569 2N5570 T4101E T4101M
T4110F 2N5571 2N5572 T4110E T4110M
T4111F 2N5573 2N5574 T4111E T4111M
T4120F T4120B T4120D T4120E T4120M
T4121F T4121B T4121D T4121E T4121M
"REPETITIVE PEAK OFF·STATE VOLTAGE,·
Gate open, TJ :: ~65 to lOoDe V DROM 50 200 400 500 600 V
-RMS ON-STATE CURRENT (Conduction angle'" 360°1=
Case temperature 'TIRMSI
TC = 85°C 12N5567. 68. 69. 70. T4101M.
T4111M. T4121B. D. MI 10---- A
'" BOoC f2N5571, 72, 13. 74, T4100M, T4110M
Press-fit & stud types) 15---- A
'" 7SoC (T4120B. D. M ~ Isolated-stud types) 15---- A
For other conditions -- See Fig. 3,4 --
PEAK SURGE INON·REPETlTlVEI ON·STATE CURRENT'
For one cycte of applied principal voltage, Teas above ' TSM
60 Hz (sinusoidal) - - - - 100---- A
50 Hz (Sinusoidal) - - - - B5---- A
For more than one cycle of applied principal voltage - - See Fig. 5, 6 --
RATE·OF·CHANGE OF ON·STATE CURRENT·
V OM :. V OROM ' 'GT " 160 mA. Ir '" 0.1 /J.s - - - - 150---- All's
FUSING CURRENT (for Triac Protection)'
At T C shown for 'T(RMS) 12,
t" 20ms 55---- A 2s
'" 2.5 ms 28---- A 2s
"0.5 ms 16---- A 2s
PEAK GATE-TRIGGER CURRENT'-
For 1 ps max., See Fig. 11 . 4 ---- A
-GATE POWER DISSIPATION:
PEAK (For 1 JJ.s max., IGTM ~ 4 A, See Fig 11 16---- W
AVERAGE . 0.5---- W
-TEMPERATURE RANGE:'"
Storage -65 to 150 °c
Operatmg (Case) -65 to 100 °c
-TERMINAL TEMPERATURE (Durlngsoldermg)
For 105 max. hermlnals and case) - - - - 225---- °c
STUD TORQUE·
Recommended 35---- HI·lb
Maximum (DO NOT EXCEED) 50---- m-Ib
; In accordance With JEDEC registratIOn data format (JS·14, RDF 2) flied for the JEDEC f2N-Sertes) types
_ For either polarity of mam termmal 2 voltage (V MT2 ) With reference to main terminal 1.
... For either polarity of gate voltage (VG)wlth reference to main terminal 1.
For temperature measurement reference pomt, see DimenSIOnal Outline
580
TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series
ELECTRICAL CHARACTERISTICS. At Maximum Ratings and at Indicated Case Temperature rTC) Unless Otherwise Indicated
LIMITS
CHARACTERISTiCS SYMBOL UNITS
MIN. TYP. MAX.
Peak Off-State Current:'
Gate open. T J '" 100o e, V OAOM = Max. rated value IDRDM 0.1 2' mA

For IT = 14 A (peak), Te = 25°C
12N5567. 68. 69. 70, T41 01M, T41 11M, T4121 see;esl 1.35 1.65'
V TM V
= 21 A (pe.akl. Te = 25°C
12N5571, 72,73,74, T4100M, T4110M, T4120""esl 1.4 1.8'
oe Holding Current:'
Gate open, Initial principal current = 500 rnA (DCl. vo = 12 V:
2N5567, 68, 69,70, T4101M, T4111M, T4121 series:
.TC=25°C. 15 30
IHD 75 200' mA
TC"-65°C
2N5571, 72. 73.74. T4100M, T411OM, T4120 series
Te = 25°C 20 75
TC" -65°C 75 300'
For other case temperature See Fig. 9 ~ 10
Critical Rate-af-Rise of Commutation Voltage:'
For vo = VOROM. IT{RMSl = 10 A. commutating
di/dt = 5.4 Alms, gate unenergized, TC = 85°C
2N5567, 68, 69, 70, T4101M, T4111M, T4121 series. 2'
For '0'0 - VORO M' IT(RMS) - 15 A, commutating dv/dt V/~s
di%dt :: 8 Alms, gate unenergized, T C :: BOaC
12N5571, 72, 73, 74, T4100M, T4110M-
Press-fit & stud types) 2' 10
= 75°C (T4120B, 0, M - Isolated-stud) 10
Critical Rate-at-Rise of Off-State Voltage:'
For '0'0 = V DRaM, exponential voltage rise, gate open,
TC = 100°C:
2N5567, 2N5569, T4121. 2N5571, 2N5573. T4120B. 30' 150
2N5568. 2N5570, T41210. 2N5572. 2N5574, 1'4120D. dv/dt 20' 100 V//J.s
T4101M, T41"M, T4121M, T4100M. T4110M. T4120M. 10 75
DC Gate-Trigger Current:'.
For 'D" 12 V IDCI. Rl" 30[J. TC" 25°C
Mode V MT2 VG
1+ positive pOSitive
AU 10-A trlacs 10 25
All 15-A triacs 20 50
IW negative negative
All 15·A triacs 20 50
Alll0·A triacs 20 40
Alll0-A triacs 20 40
For 'D" 12 V IDCI. RL "30[J, TC" -65°C IGT mA
Mode VMT2 VG
1+ positive positive
All 1Q-A triacs 45 100'
All 15-A triacs 75 1S0'
IW negative negative
Alll0-A triacs 45 100'
All 15·A triacs 75 150'
Alll0-Atriacs 80 150'
All 15-A triacs 100 200'
Alll0-Atriacs 80 1S0'
All 15-A triacs 100 200'
For other case temperatures See Fig_ 12.13,14, & 15
DC Gate-Trigger Voltage:"
For 'D" 12 VIDCI. RL "30[J
TC" 25°C 2.5
TC" -65°C VGT 4' V
For other case temperatures
yeF~. 16i 17_
For vo = VDROM. Rl = 125,Q. TC = 100°C 0.2
,• InForaccordance with JEDEC registration data format (JS-14, RDF-2) filed for the JEDEC (2N-Series) types.
either polarity of main terminal 2 voltage (V MT2) with reference to main terminal 1.
For either polarity 01 gate voltage (VG) with reference to main terminal 1.
581
TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series
ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TC) Unless Otherwise Indicated
LIMITS
CHARACTERISTICS SYMBOL UNITS
MIN. TYP. MAX.
Gate-Controlled Turn-On Time:
(Delay Time + Rise Time)
For.O =VOROM. IGT =160 rnA. Ir =0.1 P'.
iTo 15 A (peak I All I().A triaes. iT = 25 A (peak I IQI P'
All 15·A triaes. TC =25°C 1.6 2.5
Thermal Resistance:
Junction-to-Case:
Steady-State ............ .................... OJ·C l'
Transient .... . . . . . . . . . . . . . .. .. .. . ....... . . (See Fig. 19)
°e/W
Junction-to-Isolated Hex (Stud, see Dim. Outline):
Steady-State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OJ·IH 1.1
• In accordance with JEDEC registration data format (JS-14. ADF 2) filed for the JEDEC (2N·Series) types.
LOAD· Rf.$ISTIVE OR INDuCtIVE

CURAENT WAVEFO.RM: SINUSOIDAL
CONDUCTION AffGLE • 360·
:::jl,o:.~.'.'o~•••01iio
=1 1.1
CASE TEMPERATURE. MEASURED AS
SHOWN 0loI DIMENSIONAL OUTLINES
~l .H~ 1~ n· jcc.~~"~::r_GL[
.+
25 ~ 75 .0
FUU-CYCLE RMS ON-STATE CURRENT [ITIRMSa-A FULL CYCLE ftMS ON-STAtE CURRENT [tTlRMSJ-....
FUt.L-C"tCLE RMS ON-STATE CURRENT LITCRMSJ-A 92lS-2.3!1R5
~2SS-3!102
Fig. t- Power dissipation vs. on-state current Fig. 2 - Power dissipation vs. on-state current Fig. 3 - Maximum allowable case temperature
for all to-A triacs. for all t5·A triacs. vs. on·state current for all t()-A triacs.
CURRENT WAVEfORM: SINUSOIOAL ~U.RES\S I

I
=J7:fi;r~~.[iTlRMSl]·ISA f-t+t
BIJ-
LOAO, RESISTIVE OR JNDUCTIV£ RMS ON-STATE CURRENT [ITtRMSU.'OA
~
CONDUCTION ANGLE" 360· C~E TEMP.ITc'" 8~·C
~
CASE TEMPERATURE· MEASURED AS
SHOWN ON DIMENSIONAL OUTLINES GATE CONTROL MAY BE LOST GATE CONTROL MAY 8E LOST
DURING AND IMMEDIATELY FOLLOWING DURING AND IMMEDIATELY FOLLOWING
~p
~too
SURGE-CURRENT INTERVAL SURGE CURRENT INTERVAL
..
~1. COIOtluCt,QN._Clf
_Cloo
['..
OVERLOAD NAY NOT BE REPEATED ~I OVERLOAD MAY NOT BE REPEATED
~~ "I+'m
to
~J80~ ~t
UNTIL JUNCTION TEMPERATURE HAS UNTiL JUNCTION TEMPERATURE HAS
:..1°0 E.F ~ ~t
8O
RETURNED WITHIN STEADY-STATE
RATED VALUE
RETURNED W,THIN STEADY-STATE
RATED VALUE .
."
0, PRESS-f'IT 8. w-
STUD TYPES w-
"" r-- ~f1z ~i;;
~:9D
,.
Ow
~~
~~
60
...... ~S
~!
60 f--
!~8D
r- w'"
~
40
I- IU 4 """"--
..
ISOLATED-STUD TYPES 1---
60
f-r-
o 5 ID IS 4 6 tI,O 4 6 tI '0 2 2 4 6 "Dl 4 6. 8'0 ' 8 .0 2 2 I; "03
FULL CYCLE RMS Ofoi-STAT[ C~R[NT [IT~-A
SURGE-CURRENT DURATION -FULL CYCLES SURGE CURRENT DURATION-FULL CyCLES
92SS-3822RI
Fig. 4 - Maximum allowable case temperature Fig. 5 - Peak surge on-state current vs. surge Fig. 6 - Peak surge on-state current vs. surge
VS. on-state current for all t5-A triacs. current duration for all to-A triacs. current duration for all t5·A triacs.
582 ____________________________________________~-------------------------------------------------------------------------------------
____________________________________________________________________ TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series

CA.SE TEMPERATURE ITel> 25- ~~:: .. __ J(J~: "!
::: I:ll···~·· .............
.,"
CASE TEMPERATURE ITCI-·C
INST4NTAN[OUS ON-STATE VOLTAGE \'rl-I/ INSTANTANEOUS ON-STATE VOLTAGE (~T)-V
IPOSITIVE OR NEGAlIVE) (POSITIVE OR NEGATIVE)
Fig. 7 - On-state current VS. on-state voltage Fig. 8 - On-state current VS. on-state voltage Fig. 9 - DC holding current vs. case tempera·
for all 1a·A triacs. for all 15·A triacs. ture for all 1a·A triacs.
TRIGGERING MODES: ALL

ENCLOSED AREA INDICATES PRINCIPAL DC VOLTAGE-12V
INITIAL ON-STATE CURRENT·500mA.
100
t LOCUS OF POSSIBLE TRIGGERING
POINTS
~~~gG·~~~·G R~~g~~~E t+ AN~ III
'0
",
-~o -25 0
CASE TEhiPERATURE ITCI--C CASE TEMPERATURE ITCI-'C
DC GATE TRIGGER CURRENT (1GTI-A
(POSITIvE QRJtEGAlWE
Fig. 10 - DC holding current VS. case tempera- Fig. 11 - Gate rrigger characteristics and limit· Fig. 12 - DC ga te· trigger current vs. case temp-
ture for all 15·A triacs. ing conditions for determination of perature (1+& 111- modes) for all
permisSible gate trigger pulses for all 1D-A triacs.
triacs.
RINCIPf>.L DC VOLTAGE'12'"
"'I LOAD' 12 n. RESISTIVE ..
E TRIGGERING MODES: I" AND III
I 150
:t;
i 125
a 100
o . f1:1:t.
."
CASE TEMPERATURE ITc1--C
." ·~o -2~
CASE TEMPERATURE ITCI-·C
0
Fig. 13 - DC gate-trigger current VS. case tem- Fig. 14 - DC gate· trigger current vs. case tern· Fig. 15 - DC gate· trigger current vs. case tem-
perature (1- & 111+ modes) for all perature 11+ & 111- modes) for all perature 11- & 11/+modes} for all
1a·A triacs. 15-A triacs. 15·A triacs.
PRINCIPAL DC VOLTAGE.12v PRINCIPAL DC VOLTAGE' 12 V ~::.:: : :":
11.1
LOAD' 1211, RESISTIVE
4 TRIGGERING MODES, ALL ~~~gG·~~~·GR~~~~~V£I+ANDIII· ~:"::t:.:~ ::"'r::-:.:
~ ,~*: ~::~ ·::~~::I:J.f:
; 2
.,
~
TYPICAL
CASE TEMPERATURE I1 C I-"C " CASE TEMPE~ATURE tTcl-'C
Fig. 16 - DC gate· trigger voltage vs. case tern· Fig. 17 - DC gate-trigger voltage vs. case tem-
perature for all la-A triacs. perature for all 15·A triacs.
583
TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series

Ii II' I
~ 'I' tt
, , I
f,a~ I
h 60
/
WARNING:
The RCA isolated-stud package thyristors should be han-
~~ dled with care. The ceramic portion of these thyristors can·
§* tains BERYLLIUM OXIDE as a major ingredient. Do not

crush, ~ind. or abrade these portions of the thyristors be-
H , y cause the dust resulting from such action may be hazardous
~ if inhaled.
w;rl
,I .
10-1:
, .. 10-1
, . ..
TIME AFTER APPLICATION OF AtCD.HGl.ll.AR POW£R PlA.5£ -SEC0fC)5
Fig. 18 - Turn-on time vs. gate trigger current Fig. 19 - Transient junction-to-case thermal
for al/ types. resistance vs. time for al/ triaes.
584 ________________________________________________________________________
____________________________________________________________ ~ ____ TRIACS
T4113-T4115 Series
400-Hz, 6, 10, & 15-A Silicon Triacs
For Control-Systems Application in Airborne and Ground-Support Type Equipment
These RCA triaes are gate-controlied fuli-wave line voltages of 115 and 208 V RMS sine Wave Features:
silicon ac switches. and repetitive peak off-state voltages of 200 V
and 400 V. • dl/dt capability =150 Alp.
The devices are designed to switch from an 011-
state to an on-state for either polarity of applied These triacs exhibit commutaling voltage • Shorted-emltter center-gate design
voltage with positive or negative gate-triggering (dv/dt) capability at high commutating current • Commutatlng dv/dt capability
voltages. (di/dt). They can also be used in 60-Hz applica- characterized at 400 Hz
They are intended for operation up to 400 Hz tions where high commutating capability is
with resistive or inductive loads and nominal required.

For Operation with Sinusoidal Supply Voltage at
Frequencies up to 400 Hz and with Resistive or
T41138 T41130 T4113E T4113M
Inductive Load.
T41148 T41140 T4114E T4114M
T41158 T41150 T4115E T4115M
REPETITIVE PEAK OFF-STATE VOLTAGE:· VDROM
Gate open. T J = 50 to 100· C •.••..•......•.•..•.•..... 200 400 500 600 V
RMS ON-STATE CURRENT (Conduction angle = 360· ): IT(RMS)
Case Temperature
TC=90·C (T4115B. T4115D) ...................... .. 6 A
= 85·C (T4114B. T4114D) ......••••.•...•...••••• 10 A
= 80·C (T4113B. T4113D) ....................... . 15 A
For other conditions .•.•.•...•.......•.•.•.•..•.•... SeB fig. 2
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT ITSM
400 Hz (sinusoidal) ...•....•.••••...•..•.•••.•...••• 200 A
60 Hz (sinusoidal) ....•.••..•..••.•.••••••••••••••.• 100 A
50 Hz (sinusoidal) .......•.••••........•.•.••..•••.• 85 A
For more than one cycle of applied principal voltage ..••.• See fig. 3
VDM = VDROM. IGT = 160mA. tr = 0.1 J.ls ............. . 150 AlJ.ls
FUSING CURRENT (for triac protection):
TJ = -50 to 100·C. t = 1.25 to 10 ms .................. .. 30 A2 s
PEAK GATE-TRIGGER CURRENT:.
For 1 J.ls max ...•••••••••.....•..•.••..••••....•.•• 4 A
PEAK (For 1 J.ls max .• IGTM ~ 4 A. See fig. 6) ...•.•.•• 16 W
AVERAGE ••••......••••.•..•.........•.•......•.•. 0.2 W
TEMPERATURE RANGE:
Storage •..•......•...••••.••.••.•.••.•.••••.•••••• Tstg -50 to 150 ·C
Operating (Case) •..•.....•.•.••......•..•.•..•.•.•• TC -50 to 100 ·C
TERMINAL TEMPERATURE (During soldering):
For 10 s max .• (terminals and case) •••..•.•••..••••••.• 225 ·C
STUD TORQUE: TS
Recommended •.••.•......•.••..••.••.•.•..•.•.• 35 in-Ib
Maximum (DO NOT EXCEED) •.••.••..........• 50 in-Ib
For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
• For either.polarity of gate voltage (VG) with reference to main terminal 1.
.. For temperature measurement reference point. see Dimensional Outline.
CURRENT WAVEFORM: SINUSOIDAL
LOAD, RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE' 360·
CASE TEMPERATURE: MEASUREO AS
SHOWN ON DIMENSIONAL OUTLINES
T41'3 Series
I
o. T4114 Series
FULL-CYCLE RMS ON-STATE CURRENT [ITIIIIIISI]-- rutf Clell AMS tN-STATE CUWAENT [tTlR~SU-A 12(:$-n055
T4115 Series
92\.5-213'"2
Fig. I-Power dissipation vs. on·state current. Fig. 2-Maximum allowable case tempera· Stud
ture VS. on-state current. (See dimensional outline "W".)
_____________________________________________________________________ 585
TRIACS ______________________________________________________ _________
~
T4113-T4115 Series
At Maximum Ratings and at Indicated Case Temperature (TC) Unless Otherwise Specified
LIMITS
CHARACTERISTIC SYMBOL ALL TYPES UNITS
Min, Typ. Max
Peak Off-State Current:6
Gate open. TJ = lOOoe. VDROM =Max. rated value. IDROM 01 2 mA
Maximum On·State Voltage:'
roFor iT 21 A (peak). TC .25 0 C. VTM 1.4 18 V
Gate open, Initial principal current:; 500 rnA (DC), vO = 12 V.
TC=25 0 C IHO - 20 75 mA
For other case temperatures See Fig.5
Critical Rate-of·Rise of Commut~tion Voltage:'
For vD ~ VOROM, 'T(RMSJ ;0 rated value, gate unenerglzed
Commutatingdi/dt = 21.4 A/ms,Tc:: 90 0 C
T41058. T41050. T41158. T4115D 5 10
Commutat.ng dr/dl 36 Alms, TC = 85 0 C dv/dl ViJ..15
T41048. T41040. T41148. T41140 5 10 -
Commutating eli/dt = 53.3 Alms, .T C '" 80 0 C
T41038. T41030. T41138. T41130 5 10
Critical Rate-of·Rise of Off-State Voltage:6
,
For vD = VDROM. exponential vol tage rise,
gate open, TC 1000 C dv/dl 30 150
I V 111£
DC Gate- Trigger Current:6t Mode VMT2 • VG
I
---
For vO 12 V (DCI. 1+ positive positive 20 50
RL 30 n. and III' negative negative IGT 20 50 mA
Te 25 0 C I' positive negative 35 80
" 1+ negative positive - 35 80
For other case temperatures. See FIgs. 7& 8
~
DC Gate- Trigger Voltage:6t
For 110 = 12 VIDCI. RL = 30n. TC 25 0 C. VGT - 1 2.5 V
For other case temperatures. Je Fig.
For vO " VDROM. RL " 125n. Te " lOooC 0.2 - -
Gate·Controlied Turn·On Time:
For vD = VD ROM. IGT c 16OmA. Ir " 0.111£. 191
iT" 25A (peakl. TC " 25 0 C ..................... - 1.6 2.5 I1S
Thermal Resistance
Steady·State (Junction-to·Casel 8J·C - - 1 °C/W
Transient (Junction·to·Case) . See Fio. 11
Steady-State (Junction-to-Ambient). 8J· A - - 33 °C/W
• For either polarity of main terminal 2 voltage (VMT2' t For either polarity of gate voltage (V G' with reference
with reference to main terminal 1. to main terminal 1.
~g~6LYR~~~~T~;~Cy,50/60/..OOHI III I I I II
200 ::rsEgNv~Z~~T!Tc~:~~~:EbI~~:~SI} III I I I II
.. S'
11111
.. S8 I
10 100 _ 1000
INSTANTANEOUS ON'STATE VOLTAGE Ivrl-v CASE TEMPERATURE ITel _·C
SURGE CURRENT DURATION-FULL CYCLES 92C5.11051111 (POSITIvE Oft NEGA.TlVE)
Fig. 3-Peak surge on-state current vs. Fig. 4-0n-state current vs_ on-state voltage. Fig. 5-DC holding current vs. case temperature.
surge-current duration_
586 ________________________________________________________________________
____________________________________________________________________ TRIACS
T4113-T4115 Series
PRINCIPAL I:'C VOLTAG['IZV
\~~gGl~~G R~S~;~~VE I· AND 111

;;:i !;;; PRINCIPAL DC VOLTAGE·llV
%:.g~E~:G"~~~~~E I' AND 111+
::::,
•• :~
;:i~
1"+ rt
,
1
,20 ~
-'0 ·2:5 0 -so -25 0 20

CASE T[MP[RATUR[ 1T l - ' ee CAU TfIllPEIU,TUR£ 1Tcl--C
DC GATE TRIGGER CURRENT CIGyl-A
IP<lS1TIV[ OR NEGATIVE
Fig. 6-Gate-trigger characteristics and Fig. 7-DC gate-trigger current vs. case Fig. 8-DC gate-trigger current vs. case
limiting conditions for determination temperature. (1+ and 111- modes). temperature. (1- and 111+ modes).
of permissible gate- trigger pulses.
PRINCIPAL DC VOlTAGE-IZ V
LOAD' 300. RESISTIVE III Illil
~
. --t11Tl
TRIGGERING MOOES: ALL
,
."
~~
I.::
: i
f J
3~ I I
i;;e
~~
/ i·
)("'11
!E~ iI
~~
,I
'CAL
H , ..v- I
~ I I ,
• !i I
-20
CASE TEMPERATURE 11(1-·C
20
DC GATE-TRIGGER CUlUtENT trGTI-III" t2CI-ITOU

IT!
,I ..I IO-Z
, .. 'I...
0-1
,
TIME AFTER APl"LIC.tO"KlH OF R'ECllIrINGULAR POWER PULSE -SECONIS
I
Fig. 9-DC gate-trigger voltage vs. case Fig. 11- Transient thermal resistance vs.
temperature. Fig. 10- Turn-on time vs. gate-trigger current. time (junction-to-case).
________________________________________________________________________ 587
TRIACS ____________________________________________________________________
T4700 Series
Features:
1S-A Silicon Triacs • di/dt Capability '" 150 AlJ1.s
• Shorted-Emitter. Center-Gate Design
For Low·Power Phase·Control and Load·Switching Applications • Low On-State Voltage at High Current Levels
• Low Thermal Resistance
RCA T4700 series are gate·controlled full·wave ac These devices are intended for the control of ae loads in
silicon switches. They are designed to switch from an off· applications such as space heater, oven and furnace controls,
state to a conducting state for either polarity of applied motor controls, and lamp loads.
voltage with positive or negative gate triggering.
MAXIMUM RATINGS. AbIOIur.-MlI1l;mum V./ws:

MTI
Fw a,.,.ti';" with 5016O-Hz. Sinu,Did8/ SuPDI'l Volt. lind Res;,tiN or Indueti.,. L08d T4700F T4700B T4700D T4700E
REPETITIVE PEAK OFF·STATE VOLTAGE:-
a.te Open V OROM 50 200 400 500 V
RMS ON-S'tATE CUR~ENT: 0
TC .. 70 C, conduction angle = 360 'TfRMSI 15 A
PEAK SURGE INON·REPETITIVEI ON-STATE CURRENT: I T5M
For one full cvcle of applied principel voltage
60 Hz (sinusoidel)';TC· 700C .... 100 A
for one full cVcle of applied principal voltage
(60-Hz.sinutoidall. TC - 700c . 85 A
For mo ... than anti full cyde of applied vollage . See Fig. 3
PEAK GATE-TRIGGER CURRENT:
For 1 "smax . . . . , A
BOTTOM VIEW
RATE OF CHANGE OF ON-8TATE CURRENT:
VO· VOROM,IGT· 200 rnA, tr· 0.1 ". 150 Alps
FUSING CURREN~ (for triac protection':
TJ " -4010 100 C, t-1.25to 10ms ..... 50 A', JEDEC TO·66
Puke (for 1 ". mex. and IGTM '" ,.;;; 4 AI ...... . 16 w (See dimensional outline UN".)
Average (averlllinil time - 10 ms max.1 ... . ............•. 0.45 w
"fEMPERATURE RANGE:·
Star............................ . -40 to 150 ·c
Operating (Casal ................... . -4010100 ·c
PIN TEMPERATURE lOuring soiderinlll:
At distllnces;> 1/32 in.la.S mm) from lUting plane for 10 s max. "5 ·c
• For.ither pol_itv of main termiMl2voilage fV MT 2' with reference to main terminal 1.
e For either polaritv of glte voltage IVGI with ref.... nce 10 main terminal , .
.. For """"8I\Ire menurement reference point, ... o;m",.;OM/ OutU"..
f· . 'it
III
~
Z
LOAO RESISTl'JE
RMS ON-STATE CURRENT [IT!RMS~·tSA
AT SPECIFIED CASE: TEMP.
r---"-- GATE: CONTROL MAY BE LOST

J±H
OU~ING ANO IMMEDIATELY FOLLOWING
~"" IOOk.:--t-- . SUR.GE CURRENT INTERVAL.
~ I '~ OVERLOAD IoIAY NOT BE REPEATED
;:"i ."'--.... I UNTIL JUNCTION TEMPERATURE HAS
~EBO~~ :!-i~~N~fu~v~:rHIN STEADY' STATE
ii60r--~~·ti·,~~s~~~t~~-t--i-TT
~U40)r--+--t-rTt--+--~-r~~~~-r
~ t- t-- j-- -- t-t-ti---t--ir----t--r
FUll-CYCLE RMS ON-STATE CURRENT

.0
o 2 4 6 8
RNSON-STATE CURREN~ OT (rmll)-A
10 ·· -4 6 8 10
" 6 8 10 2 2 4 6 '103
Fig. I-Power dissipation curve. Fig. 2-Conduction rating chart (case temperature). Fig. 3-Surge current rating chart.
I EOES
..
INSTANTANEOUS ON-STATE VOLTAGE IVTI-v
I POSITIVE OR NEGATIVE I
,
CASETElFERATUREITCl- Dc
-10
CASETEFERATUREfTcl-1IC
D 20
Fig. 4-0n-state characteristics for either Fig. 5-DC holding current characteristics for Fig. 6-DC gate· trigger current charac·
direction of principal current. either direction of principal current. teristics for 1+ and 111- modes.
588
____________________________________________________________________ TRIACS
T4700 Series
At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature ITC)
CHARACTERISTICS TRIAC TYPES UNITS

T4700B T4700D
Min. Typ. Max. Min. Typ. Max.
Peak OlloState Cu"ent',IDROM

Gate open
At Tj = +1000 C and VOROM = Max. rated value - 0.2 4 - 0.2 4 rnA
Instantaneous On-State Voltage'. vr
For iT = 30 A lpeak) and TC = +25 0 C. . . . . . .. - 1.6 2.0 - 1.6 2.0 Vlpeak)
DC Holding Current', IHO:
Gate Open
Initial principal current = 150 rnA (de)
At TC = +250 C. ............... . .... - 15 60 - 15 60 mAlde)
For other case temperatures ..... ") . . . . . . . See Fig. 5 See Fig.5
Critical Rate of Applied Commutating Voltage'.
Commutating dv/dt:
For vO = VOROM, ITIRMS) = 15 A, eommutating
di/dt = 8 Alms, and gate unenergized
At TC = +700 G... ........ . ....... 2 10 - 2 10 - VII's
Critical Rate of Rise of Off·State Voltage'.
Critical dv/dt:
For vO == VOROM. exponential voltage rise,
gate open
At TC = +1000 C. . . . . . . . . . . . . . . .... 30 150 - 20 100 - VII'S
DC Gate·Trigger Curren~ -. IGT
For vO = 6 volts Ide). RL = 12 ohms,
TC = +25 0 C, and Specified Triggering Mode:
1+ Mode: VT2 is positive, VG is positive. - 15 30 - 15 30 mAlde)
1- Mode: VT2 is positive, VG is negative ... - 35 80 - 35 80 mAlde)
111+ Mode: VT2 is negative, VG is positive. - 35 80 - 35 80 mAlde)
III' Mode: VT2 is negative, VG is negative ... - 15 30 - 15 30 mAlde)
For other case temperatures ... .. . . ... .. See Figs. 6 & 7 S... Figs. 6& 7
OC Gate·Trigger Voltage' -, VGT:
For vO = 6 volts Ide) and R L = 12 ohms
At TC = +25 0 C... .
. .... . .. ......
For other case temperatures . . . . . .
. - I I 1
See Fig. S
2.5 - I I 1
See Fig. S
2.5 Vide)
For vO = VOROM and RL = 125 ohms

At TC = +1000 C. 0.2 - - 0.2 - - Vide)
Gate..controlled Turn-On Time, tgt
For vO = VOROM, IGT = 160 rnA,
0.1 /J.S rise time, and iT = 25 A Ipeak)
At TC = +25 0 C... - - -- - 1.6 2.5 - 1.6 2.5 IJ.S
Thermal Resistance, Junction to case.
ROJC ............ . ........ .... . - - 1.3 - - 1.3 oC/W
'For either polarity of main terminal 2 voltage (VT21 with reference to main terminal 1.
-For either polarity of gate voltage (Vo) with reference to main terminal 1.
PRINCIPAL DC VOLTS' 12
LOAD 'I,W, RESI$TIVE
TRIGGERING MOOE$: ALL
-, '
!
,
C~5E TEMPERATURE (Tcl- OC CASE TEMPERATURE (TCI-·C DC GATE-TRIGGER CURRENT (IGTI-mA
Fig. 7-DC gate·trigger current charac· Fig. 8-DC gate-trigger voltage characteristics. Fig. 9- Turn-on time vs. gate-trigger current.
teristics for ,- and "'+
modes.
_____________________________________________________________________ 589
TRIACS------------------------------------------------------------______
T6000, T6001, T6006 Series
Features:
16-A Silicon Triacs • 150-A peak surge full-cycle
current ratings
Three-Lead Plastic Types for Power-Control
• Shorted-emitter center-gate design
and Power-Switching Applications
The RCA-T6000, T6001 and T6006 series The T6006-series triacs are characterized • Low thermal resistance
triaes are gate-controlled full-wave silicon for 1+ and 111+ gate-triggering modes only. • Package design facilitates mounting on a
switches utilizing a plastic case with three They are intended for power·control appli- printed-circuit board
leads to facilitate mounting on printed- cations in which integrated·circuit zero·cross-
circuit boards. They are intended for the ing switches, such as the RCA-CA3059 TERMINAL DESIGNATIONS
control of ac loads in such applications as series, are used as the triac-triggering circuits.
motor controls, light dimmers, heating can· The T6006-series triacs have gate charac-
trois, and power-switching systems. teristics which assure that a CA3059-series
These devices are designed to switch from integrated circuit can supply sufficient gate
an off-state to an on-state for either polarity current to trigger them over their full oper-
ating temperature range.
of applied voltage with positive or negative
gate triggering voltages. They have an on· The plastic package design provides not only
state current rating of 16 amperes at a' TC ease of mounting but also low thermal im- GATE
of BOaC and repetitive off-state voltage pedance, which allows operation at high
92(5-27'718
ratings of'50 to 600 volts. case temperatures and permits reduced heat-
sink size. JEDEC TO-22DAB
The T6001-series triacs are characterized for
1+ 111- gate triggering modes only and (See dimensional oulline "S".)
should suit a wide range of applications
that employ diac or anode on/off triggering.

T6000F T6000B T6000C T6000D T6000E T6000M
T6001F T6001B T6001C T6001D T6001E T6001M
T6006B T600GC T6006D T6006E T6606M
200 300 400 500 600 V

16 A
See Fig. 2
150 A
140 A
See Fig. 3
100 AIl's
100 A2s
49 A2 s
4 A
16 W
0.5 W
-65 to 150 °c
-65 to 110 °c
RMS ON-STATE CURRfNT[ITII~"Sij-A
225 °c
Fig. 2 - Maximum allowable case-temperature
• For either polarity of gate voltage (VG) with reference to main terminal 1.
vs on-state current.
590 __________________________________________________________________
--------------------------_______________________________________ TRIACS
T6000, T6001, T6006 Series

LIMITS
For All Types
CHARACTERISTIC Except as Specified UNITS
Min. . Typ. Max.
loROM·
T J = llOo C, VoROM = Max. rated value - 0.1 1.2 rnA
V'fM·
iT = 30 A (peak). TC = 250 C
T6000, T6006 Series
T6001 Series
-
-
1.4
1.B
1.75
2.0
V
2 4 6 II
.,
SURGE CURRENT OURATION -
100
FULL CyCLES
. 1000
IHO· 112e9-Z9279
vo=12V,TC=25 0 C T6000 Series - 15 35

rnA
Fig. 3 - Peak surge on-state current vs surge
T6001 Series - 20 50 , current duration.
For other case temperatures See Fig. 7 CASE TEMPERATURj ITC )-80-C .~
fI5'¢"''''~
dv/dteA
vo = VoROM, IT(RMS) = 16 A, di/dt = a.5A/ms,
_c
~I
~"i
K>OO
·
4
-- ·
"
·
f'\I..~
tl
~.:;
~~
TC=BOoC 4 10 - V//ls
dv/dt·
,
· ~~
~!:!
vo = VoROM, T C = 1000C
T6000S, T6001S', TS006S 100 300 -
-
!!K>O
i~
~i ·
•
·· !i
.l'rs.., (~U4.
I
·". ... ~
T600OC, T6001C, T6006C B5 275 It4~E)
. .I .,I . .·
T6000o,T6001o,T6006o 75 250 - V//ls
T6000E,T6001E,T6006E - 65 225
, , 0.01
T6000M, T6001M, T6006M . 60 200 -
TlME(t)-1111
IGT" Mode VMT2 VG Fig. if - Peak surge on-state current and
vo = 12 V (dc) 1+ positive positive T6000 series - 25 50 fusing-current vs tjme.
-r-r-rr-..,-'"
RL = 30n T6001 series - - BO
TC= 250 C T6006 series - - 45 rnA
111- negative negative T6000 series - 25 50
T6001 series - - BO
1- positive negative T6000 series only - 45 ao
111+ negative positive T6000 series only - 45 80
rnA
T6006 - - 45
For other case temperatures. See Figs. 9 and 10
VGTeA
T6001 1+ 111- - 1.25 3.0
vo = 12 V (dcl. R L = 30 n, TC = 25 0C T6006 1+ 111+ - 1.25 1.5 V
TSOOO ali modes - 1.25 2.5 Fig. 5 - Gate pulse characteristics for all
0.2 - - triggering modes.
vo = VoROM, RL = 125 n, TC = 1000C
For other case temperatures. See Fig. 11
tgt
.YO = VoROM, IGT = 80 rnA, tr = 0.1 /lS, iT = 25 A (peak),
TC= 25 0C - 1.6 2.5 /lS
ROJC. - - 1.5 OCIW

ROJA' - - 50 °CIW
• For either polarity of gate voltage (VG) with reference to main terminal 1.
A Variants of these devices having dv/dt characteristics selected specifically for inductive loads
are available on special order; for additional information, contact your RCA Representative 92C9-~2'1
or your RCA Distributor. Fig. 6 - On-state current vs on-state voltage_
------------------------------------------------------------------___ 591
TRIACS __________________________________________________________________
T6000, T6001, T6006 Series
CASE TEW'ERATUAE (TCI-·C

9'2CS-2928'2
Fig. 7 - DC holding current vs case temperawre. Fig. 8 - Typical critical rate-of-rise of off-state Fig. 9 - DC gate-trigger current (for 1+ and 1/,-
voltage vs case temperature. triggering modes) vs case temperature.
CASE TEMPERATURE (TC)--C

.g2CS-29215
Fig. 10 - DC gate-trigger curfflnt (for'- and 11/+ Fig. 11 - DC gate-trigger voltage vs case temper- Fig. 12 - Turn-on time vs gate-trigger current.
triggering modes) vs case temperatuffl atUffl for T6000 series only_
for T6000-series only.
592------------------------------------------------------~-------------
TRIACS
2N6342A-2N6344A, 2N6346A-2N6348A (T6000) Series

• 120-A peak surge full·cycle current ratings
Three-Lead Plastic Types for Power-Control • Shorted-emitter center-gate design
and Power-Switching Applications • Low switching losses
The 2N6342A-44A, and 2N6346A-4BA of applied voltage with positive or negative • Glass·passivated chip for stability
series triacs are gate·controlled full-wave gate triggering voltages. They have an an- • Package design facilitates mounting on a
silicon switches utilizing a plastic case with state current rating of 12 amperes at aTe printed'circuit board
three leads to facilitate mounting on printed· of BOoe and repetitive off·state voltage
circuit boards. They are intended for the ratings of 200, 400, and 600 volts. The
control of ac loads in such applications as plastic package design provides not only
motor controls, light dimmers, heating con- ease of mounting but also low thermal im·
trols, and power·switching systems. pedance, which allows operation at high
case temperatures and permits reduced heat- TERMINAL CONNECTIONS
These devices are designed to switch from
sink size.
an off·state to an on·state for either polarity
Maximum Ratings, Absolute·Maximum Values: 2N6342A 2N6343A 2N6344A

2N6346A 2N6347A 2N6348A
* V OROM - T J "" -~o to 110°Co 200 400 600 V
_________ 12 ________ ~
A
• 'TIRMS) T C = 80 C. 0 = 360
For other conditions _ _ _ _ _ 5ee Fig.
'TSM
For one full cycle of applied principal voltage 92CS-277.8
60 Hz (sinusoidal), T C =: 80:C. 120 A

JEDEC TO·220AB
50 Hz (sinusoidal). T C "" 80 C . 113 A
FOr more than one cycle of applied principal voltage See Fig, 6 (See dimensional outline "S.")
di/dt
Vo = VOROM.'GT = 200 mAo tr = 0.1 ~s .. 100
12 t [At T C shown for IT(RMS)' half·sine wave):
t'" lOms. 64
= 2.5 ms. 40
'=' 0.5 ms. 23
= 1 to 8.3 ms 40
• 'GTM" _ _ _ _. ___ 4
For 1 JlS max. A
_________ 20
* PGM (For t JlS max., IGTM ~ 4 Al
________ 0.5
W
W
• PGIAV) -40 to 150 _ _ _ __
* Tst9 °c
-40 to 110 _ _ _ __ °c
• TC
• T T (During soldering for 105 max.) 230 °c
* In accordance with JEDEC registration data format JC-22 RDF-2 .

• For either polarity to main terminal 2 voltage (V MT 2) with reference to main terminal 1.
Fig. 1 - Principal voltage-current characteristic.
• For either polarity to gate voltage (V G) with reference to main terminal 1.
'0 CURRENT WAvEFORM'SINUSOIDAL

• CONDUCTION ANGLE((J):360·
~ 161----,j---t--·t---,'l-chftcr----t--J
TEMPERATURE MEASURED AS
SHOWN ON OIMENSIONAL OUTLINE
~
~~ 121--+--~_f·~Lt7t~~~-t--4
Q
~
2 8r--t--n-r77&~--t- ~ 81--t--i---t~71~~~~t--~
(J'CONDUCTION ANGLE w
I , c
CURRENT WAVEFORM:S,NUSOIOAL
LOAD:RESISTIVE OR INDUCTIvE
5 41--+-~~~~~~~~~~~~~
CONDUCTION ANGLEf,):360·
~
CASE TEMPERATURE (TC) 0IlO·C
D 4681012 o 2 4 6 10'2 14
FULL-CYCLE AvERAGE ON-STATE CURRENT (I T(AVI]-A FULL-CYCLE RMS ON-STATE CURRENT [ITHlMS)] -gA,CS_3036$
nCS-30364
Fig_ 2 - Power dissipation as a function of average Fig_ 3 - Power diSSipation as a function of rms Fig. 4 - Maximum allowable case-temperature
on-state current.
on-state current. as a function of average on-state current.
593
TRIACS ___________________________________________ ~ _________________________

"0
At Maximum Ratings Uness Otherwi&e Specified, and at Indicated Temperatures
LIMITS
For All Types
Except as Specified
90f---+--+---f
Min. Typ. Max.
I
• IOROM- I
TJ = 110°C, VOROM = Max. rated value - - 2 mA .0 f& 1'j

-~~
* vTM-
iT = 17A (peak), Te = 25°e - 1.3 1.75 V 70
8'CONOUCTlO~ ANGLE
14
IHO- FULL-CYCLE RMS ON-STATE CURRENT [lTlRMSlj -A 9:2CS .. 30363
Gate open, Initial principal current = 200 mA Fig. 5 - Maximum allowable case-temperature as a
Vo = 12V, Te = 25°C - 6 40 mA function of rms on-state current.
* = _40°C - - 75
GATE CONTROL MAY BE
dv/dt- (eommut~ting) LOST DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
Vo = VOROM, ITM = 17A, di/dt = 6.5A/ms, f----f--+- INTERVAL.
Te = BOoe
dv/dt- (Off·State)
vO= VOROM, Te= 1000 e
- 5 -
Vips
Ii
~i
~3: f----i--+--
~
~~~~~~~~ ~A:T7~TJ~~CTlON
TEMPERATURE HAS RETURNED
ro 5TEA:X~TAT' RATED VALU,
2N6342A, 2N6346A 100 300' - ~~ 8 ----r--

~S 6~---t---r----t-~O~~~~~~~
2N6343A,2N6347A 75 250 -
2N6344A, 2N634BA 60 200 - ~~ I
a.~ SUPPLY FREQUENCY: 50/60 Hz SINE WAVE
-4 LOAD RESISTIVE
IGT" Vo = 12V (de), RL = lOon CASE TEMPERATURE (T c l-80·C
:5 RMS ON· STATE CURRENT [rTIRMSI}12A
Mode VMT2 VG I 2 4 8 10
1+ + + - 6 50 SURGE CURRENT DURATION-fULL CYCLES
92CS- 303&6
Te = 25°C 111- - - - 10 50 Fig. 6 - Peak surge on-state current as a function
1- + - (2N6346A-4BA only) - 6 75 of surge current duration.
111+ - + (2N6346A·4BA only) - 25 75 mA
* 1+ + + - - 100 1000, AT TC SHOWN fOR ITIRMS~t.~~_ I,'''''
*
*
Te =_40 0 e 111-
1-
-
+
-
- (2N6346A-4BA only)
-
-
-
-
100
125 -4 ., '-1' ~M.t ~jIo.~t
,"'""~ I
,
4
* 111+ - + (2N6346A·4BA only) - - 125

~I
~g
I- f<~s~l"ut S,lvt----;--
U. , .. ~",
~.
~~
2
VGT-· Vo = 12V (dc), RL = lOon ~eJ
~"
Mode VMT2 VG i5 ~IOO IO~ t!
1+ + + - 0.9 2
~~
~B
".
9
8 :~~ u.
Te=25°C 111- - - - 1.1 2 ~!i
1- + - (2N6346A-4BA only) - 0.9 2.5
."
4~
w'
-4
41 ~
111+ - + (2N6346A·4BA only) - 1.4 2.5
.g , ,
*
* TC= _40°C
1+
111-
+
-
+
-
-
-
-
-
2.5
2.5
10
, .,. I
,
TIME 111- ml
. .. 10
, .1
92CS-:50lS8
* 1- + - (2N6346A-4BA only) - - 3 V Fig. 7 - Peak surge on·state current and fusing

* 111+ - + (2N6346A-4BA only) - - 3
vo = VOROM' RL = 10 kn
1+ + + 0.2 - -
TJ= 110°C 111- - - 0.2 - -
1- + - (2N6346k4BAonly) 0.2 - -
111+ - + (2N6346A·4BA only) 0.2 - -
* tgt
Vo = VOROM,IGT= 120mA,tr =0.lps,iT= 17A (peak).
TC = 25°C - 1.5 2 ps
• ROJC - - 2 °e/W
• In accordance with JEDEC registration data format' JC-22 RDF2 .

• For either polarity of maio terminal 2 voltage (V MT2 ) with reference to main terminal 1. 0,4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4.4
POSITIVE OR NEGATIVE INSTANTANEOUS
• For either polarity of gate voltage IV G) with reference to main terminal 1. ON-STATE VOLTAGE I¥ TI-V
Fig. 8 - On-state current as a function of on-state
voltage.
594 _____________________________________________________________________
____________________________________________________________ ~-TRIACS
· \
INITIAL ON- STATE CURRENT' I.,)e 2DOmA
-;.
:s PRINCIPAL DC VOLTAGE -12
LOAO*IOOo. RESISTIvE
v
·
~ TRIGGERING NODES ALL
"- ~
0
%
i ~ :-..---
il
I
~
0
:l
I
·, '" '- ['-...,

....
~~ 'Ics.f--t-r-+-j--t-j--t-t--t--j
~
~
~~~~~~~~~~~~~~~~
·· -..
~ i 4'r--r-r--r-r--r-r--r-t--t-;
~
-EO -2. • 2. 40 eo eo 100 120 I -60 -40 -20 0" 20 40 &0 80 100 120 140 -60 -40 -20 a 20 40 60 eo 100 120 140
CASE TEM'ERATURE «TC)--C llles-JOu, CASE TEMPERATURE I TC)-·C 9ZCS-1O'" CASE TEMPERATURE ITc)_·C 92CS-30370
Fig. 9 - Normalized holding currefJt as a function Fig. 10 - Normalized gate trigger current as a Fig. 11 - Normalized gate trigger voltage as a
of case temperature. function of case temperature. function of case temperature.
I,
., 2 4.
t
2 4 a. 10 102
TIME If)-ml
.. .I.'
I.'
92C9-50nl
Fig. 12 - Normalized transient thermal resistance

as 8 function of time.
________________________________________________________________ 595
TRIACS ____________________________________________________________________
MAC15, MAC15A (T6000) Series

• lS0-A peak surge fu/l-cycle current ratings
Three-Lead Plastic Types for Power-Control • Shorted-emitter center-gate design
and Power-Switching Applications • Low switching losses
The RCA-MAC15 and MAC15A series triaes applied voltage with positive or negative gate
• Glass-passivated chip for stability
are gate-controlled full-wave silicon switches triggering voltages. They have an on-state cur-
utilizing a plastic case with three leads to rent rating of 12·A at T C = 95°C and 15·A at • Package design facilitates mounting on a
printed-circuit board
facilitate mounting on printed-circuit boards. T C = 80° C and repetitive off·state voltage
They are intended for the control of ae ratings, of 200, 400, and 600 volts.
loads in such applications as motor controls, The plastic package design provides not. only
light dimmers, heating controls, and power· ease of mounting but also low thermal im· TERMINAL CONNECTIONS
switching systems. pedance, which allows operation at high
These devices are designed to switch from an case temperatures and permits reduced heat-
off·state to an on·state for either polarity of sink size.

MACI5-4 MACI5-6 MACI5·B
MACI5A-4 MACI5A-6 MACI5A-B 92CS-27718
V DROM " T J" ~40 to 125°C. 200 400 600 V

JEDEC TO-220AB
ITIRMS) e ~ 360 ,
T C ~95 C 12 A (See dimensional outline "S"'.)
" BOoC 15 A
For other conditions See Fig. 3
ITSM '
For one full cycle of applied principal voltage, at
current and temperature shown above for 'T(RMS)
_ _ _ _ _ 150 _ _ _ _ __
60 Hz (sinusoidal) . A
50 Hz (sinusoidal) 140 A
For more than one cycle of applied principal voltage _ _ _ _ _ See Fig. 4 _ _ _ __
di/dt
VD" VDROM,IGT" 200 rnA. t r " 0.1 !" 100 AI!'.
IGTM" ______ 2
For 1 J.lS max. A
PGM IFor 1 !" max., I GTM ":4 A) 20 W
PGIAV) . 0.5 W
-40 to 150 _ _ _ _ __ Fig. 1 - Principal voltage-current characteristic.
Tstg . °c
TC· -40to 125 °c
TT (During soldering for 10 s max.) 230 °c
• For either polarity of main terminal 2 voltage (V MT2 ) with reference to main terminal 1 .
• For either polarity of gate voltage IV G) with reference to main terminal 1.
CURRENT WAVEF~M, SINUSOIDAL

it 28 CONDUCTION ANGLE (81: 360· 150 CONDUCTION ANGLE (6): 360·
I CASE TEMPERATURE (Tcl· IIO·C CASE TEMPERATURE: MEASURED AS
t-24 SHOWN ON DIMENSIONAL OUTLINE
~20 ~
~ 16 ,-CONDUCTION ANGLE
90·
c 60·
~ 12 30·
~ 8
3Q-
60·
90·
~ 4 90
,=CONOUCTION ANGLE
.0 40
2 4 6 8 10 12 16 18 o 2 4 6 10 14 16 18 • 10
FULL CYCLE RMS ON-STATE CURRENT [IT(RMS)]-;~S.30427 FULL CYCLE RMS ON-STATE CURRENT [IT(RMSlj-A SURGE CURRENT OURATION - FULL CYCLES
.21;:5·30433
Fig. 2 - Power dissipation as a function of on-state 92CS -~0426
Fig. 4 - Peak surge on-state current as a function of
Fig. 3 - Maximum allowable case-temperature as a
current. surge current duration.
function of on-state current.
596 _____________________________________________________________________
_________________________________________________________________ TRIACS
MAC15, MAC15A (T6000) Series

.uu,
LIMITS
For All Types
Except as Specified
Min. Typ. Max.
IOROM-
VOROM = Max. rated value. T C = 125°C - - 2 mA
vTM-
~ ~ ~ ~ ~ U II ~ 4.4
T C = 25°C, iT = 21 A (peak) - 1.3 1.6 V POSITIVE OR NEGATIVE INSTANTANEOUS
ON-STATE VOLTAGE hr)-V 92:CS-30428
IHO-
voltage.
Gate open. Initial principal current = 200 mA (de)
vo = 12 V, TC= 25°C - 6 40 mA INITIAL ON- STATE CURRENT IlTI- zoo rnA
dv/dt- (Commutating)
vo = VOROM. iT = 21A (peak)
di/dt = 8 A/ms. TC = 80°C - 5 - V/p,s
IGT" Vo = 12 V {del. RL = 100 n

TC=25°C Mode VMT2 VG
1+ + + - - 50
mA
111- - - - - 50
1- + - MAC15A series only - - 75
111+ - + MAC 15A series only - - 75 o.
-60 -40 -20 0 20 40 60 80 \00 120 140
VGT" Vo = 12 V (del. RL = 100 n CASE TEMPERATURE 1Tcl-·C .21:8-50432
TC = 25°C Mode Fig. 6 - DC holding current as a function of case

VMT2 VG
temperature.
1+ + + - 0.9 2
111- - - - 1.1 2
1- + - MAC 15A series only - 0.9 2.5 PRINCIPAL. DC 'vOLTAGE. 12 V
111+ - + MAC15A series only - 1.4 2.5 V L.OAD • 100 G, RESISTIVE
TRIGGERING MODES: ALL
TC = 110°C Vo = VOROM, RL = 10 kn
1+ + + 0.2 - -
111- - - 0.2 - -
1- + - MAC15A series only 0.2 - -
111+ - + MAC15A series only 0.2 - -
tgt
vO= VOROM, IGT = 120 mA, tr = 0.1 p,s, iT= 17A (peak),
TC = 25°C - 1.5 2 p.s
0.4
ROJC - - 2 °CIW -60 -40 -20 0 20 40

CASE TEMPERATURE (TCI-·C
60 80 100 120 140
9%C5-50UI
• For either polarity of main terminal 2 voltage tV MT2) with reference to main terminal 1.
Fig. 7 - Normalized gate trigger current as a function
• For either polarity of gata voltage tv G} with reference to main terminal 1. of case temperature.
PRINCIPAL DC VOLTAGE. 12 V Z'JCltl- R'U)·R'JC

LOAO ·100 n, RESISTIVE
TRIGGERING MODES :ALl
0.02
-60 -40 -20 0 20 40 60 80 100 120 140 2 48' 2 4 III 2 4 ell 2 418
CASE TEMPERATURE ITcl-"C 10 100 1000 10000
9%CS-30430 TIIIIEIII-illi
92eS-3042.
Fig_ 8 - Normalized gate trigger voltage as a function Fig. 9 - Normalized transient thermal resistance
of case temperature.
as a function of time.
_____________________________________________________________________ 597
TRIACS--_______________________________________________________________
T6260, T6261 Series

Features:
2S-A Silicon Triaes • di/dt Capacity = 100 A/ps
• Shorted-Emitter, Center- Gate Design
Isolated Flange, Ouick-Connect • Low Switching Losses
Terminals - Compatible TO-3 Mounting • Low On-State VoItlIge at High Current
For General Purpose AC Power Levels
Switching Applications • Low Th ermal Resistance
• 2_5 kV RMS Isolation
• Recognized under the component
Fig. , - Principal voltaglH:urrent charscteristlc program of Underwriter. Labora-
for both series. tories, Inc. (File No_ E76004)
The RCA T6260 series and T6261 series controls, heating controls, motor controls, TERMINAL DESIGNATIONS
triaes are gate-controlled fUll-wave silicon ac arc-welding equipment, light dimmers, and
switches. They are designed to switch from power-switching systems. They can also be
an off state to an on state for either polarity used in air-conditioning and photocopying
of applied voltage with positive or negative equipment.
gate-triggering voltages. The T6260 series triacs are characterized for
The types in these series utilize an RCA all four triggering modes, 1+, 111-, 1-, and
designed package JEDEC TO-238AA that 111+.
features an isolated flange for ease of
The T6261 series triacs are characterized for
mounting and with good thermal 1+ and 111- gate triggering modes only and TOP VIEW
conductivity; and rugged, quick-connect
type terminals.
should suit a wide range of applications that JEDEC TO-238AA
employ diac or anode on/off triggering.
These triacs are intended for control of ac (See dimensional outline "V"_l
loads in applications such as microwave-oven
T6260C T6260E
MAXIMUM RATINGS,Absolute-Maximum Values: T6261C T6261E
For Operation with Sinusoidal Supply Voltage at Frequencies
Up to 50/60 Hz and -"ith Resistive or Inductive Load. T6260B
T6261B
I T62600
T6261D
I T6260M
T6261M
VOROM :'
Gate open. TJ = -40 to 110·C . . . . . . • . . • . . . . . 200 300 400 500 600 V
IT{RMS) (8 = 360"):
TC= 75"C . . . . . . • . • . • • • • . . • . . . . • . . • . • 25 A
For other conditions . . • . . . • . . . • . . . . . . . • . . ·S•• Fig. 3 - - - -
iTSM'
For one cycle of applied principal voltage RMS ON-STATE CURRENT[ITIRMS1]-A 92CS32003
60 Hz (sinusaidall, IT{RMS) and TC as above 300 - - - - A Fig. 2 - Power dissipation as 8 function of o".state
. 50 Hz (sinusoidall, IT(RMS) and TC as above 280 A current for both series.
For more than one c'(cle of applied principal voltage ..• See Fig. 4 - - -
di/dt: .
VOM = VbROM' IGT = 200 rnA, tr = 0.1 uS (See Fig. 14) . - - - - 100 - - - - Alus
I't [At TC shown for IT{RMS), half-sine wave]:
t= 20m• . . . • . . . • . • . . • . • • . • • . • . . • . . . . . ---500---- A's
a3ms . . . • . . . . . • . . . . . • . . • . . . . . . . . . . ---370---- A's
0.5ms • . . • . . . . . . . . . . . . . • . . . • . • . . . . . 145---- A's
IGTM :.
For 1 u' max. (See Fig. B) . . • . . . . . . • . . . • . . . . . ----12---- A
PGM:
Peak {For 10 US max., IGTM .. 4A (peak), (See Fig. B) .•. ----40--- w
PG{AV) .......................•....•.. - - - - 0..75 w
TstgA . . • . • • . • • . • • • . • . • . . . • • . • . • . . • . . . • - - - -40 to 125 - - - ·C
Tc" ................................ . - - - . -40 to 110 ·C
TT"
_ _ _ 225, _ _ __
During soldering for 10 s maximum • • • • . . • . • . . • •
Isolation Voltage (Terminals to flange) ---2500-----
eFor either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
_For either polarity of gate voltage (V G) with reference to main terminal 1. RMS ON-STATE CURRENT [ITIRMS)]-A 92CS.32004
"'For temperature measurement reference pOint, see:OimenSlonal Uufllne~ Fig. 3 - Maximum a/~owable case-temperature lIS a
function of anastate current for both 'Brie$.
598--__________________________________________________________________
--________________________________________________________________ TRIACS
T6260, T6261 Series

LIMITS
For All Types
CHARACTERISTIC Except as Specified UNITS
Min. Typ. Max.
IOROM·
V OROM = Max. rated value, gate open, T C = 11 DoC - 0,2 4 rnA 10 .. 6 '100 .. ~ '000
SURGE CURRENT DLflATION-FUU. CYCLE !il2CS-~200'
vTM· FIg. 4 - Peak surge on-state current as a function

of surge current duration for both series.
TC = 25'C, iT = 100A (peakl, - 1.5 2
V
= 56A (peakl - 1.35 1.85
··.'"
10". AT TC SHOWN FOR InR.. S)
• I'f
IHO•
Gate open, initial principal current = 500 rnA (del
Vo = 12 V, TC = 25°C - 25 60 rnA
-4
~I
~-
-
~:
.·2
I
I
\t.\~~
I, , .'.!.-
~ ....,~
Z
w
~i
!~
F or other case temperatu res See Fig. 7 ;~ ",
T ..J~N
dv/dt· (Commutatingl (See Fig. 151

Vo = V OROM ' IT(RMSI = Max. rated value,
~~
~~
!~
:
·
Zrs",(~
•.... I..·~1-1. . . . . .
·· ;!~ ~
.. ~ f
di/dt = 13 Alms, gate unenergized, T C = 75°C
dv/dt· (Off·Statel
VO=200V
5
50
30
200
-
-
V//ls
.~
·, . ..
10'
, . ..II ,
,
."
Vo = VOROM ' exponential voltage rise, 300,400 V 30 150 - I 10
TIME (11-11\,
gate open, T C = 11 DoC 500,600 V 20 100 - 92e5-32006
IGT •• Vo = 12 V (de!. RL = 30n, T C = 25°C

current as a function of time for
both series.
Mode V MT2 VG
1+ + + - 15 50
T6260 111- - - - 20 50 rnA
1- + - - 30 80
111+ - + - 40 80
1+ + + - - 80
T6261 111- - - - - 80
For other case temperatures See Fig. 9, 10
V •• Vo = 12 V (del, RL = 30n, T C = 25°C (See Fig. 11)
GT
T6260 - 1.1 2.5 V
T6261 - 1.5 3
tgt (See Fig. 12, 16)

Vo = V OROM ' IGT = 200 rnA, tr = 0.1 /lS, iT = 60A (peak!.
T C =25°C - 1.7 - /ls voltage for both series.
ROJC - - 1.1 °C/W

eFor either polaritY. of main terminal 2 voltage (VMT2) with reference to main terminal 1.
-For either polarity of gate voltage (VGl with reference to main terminal 1.
CASE TEMPERATURE ITe \-"C

92C5-32007
Fig. 7 - DC holding current as a function of case

lemperature for both seri...
_____________________________________________________________________ 599
TRIACS ____________________________________________________________________
T6260, T6261 Series
I
; 2~~--~~~~
~~ IDs
:'''' 6
g~ 4
""
g~ 2~~~~~k9'-hL
iii:
~
468, 4 6 8 '0
DC GATE-TRIGGER CURRENT IIGTJ-A CASE TEMPERATURE (TC }_OC

[POSITIVE OR NEGATIVE I
CASE TEMPERATURE (Ie I~OC • 92CS-3200B
Fig. 8 - Gate-trigger characteristics and Umit-
ing conditions for determination of
permissable gate-trigger pulses for both
Fig. 9 - DC gate-trigger current vs. case temperature
(I+ & II r modes) for both series. ,r
Fig. 10 - DC gare·trigger current vs. case temperature
& 11/+ modes! for both series.
series.
Vo
-r --- :
oj --------------
O.SITS!.! :
0----
L -
I
I.
-~-
I
~ ,'I 92CS-17063'
CASE TEMPERATURE ITe J--"C Fig. 14 - Rate-of-change of on-state current with time (defining dildt) for both series.
Fig. 11 - DC gate-trigger voltage vs.. case temperature
for both series.
Igl = Id + I,
SUPPLY I
1
I
1 1
---:-i
Vo
0-1_1-I I I
J2L
I~ 200 2110 300 3!1O .00 450
I I I
DC GATE - TRIGGER CUR~ENT I1GTI-",4
1 1 1
Fig. 1i-Tum-on time vs. gaf.e.trigger current.
,.--1
1.1 1 1 90% POINT
ITM 1 1 I
0- 1 i -- 1- -l- - - -
r i d --iI, ~
I 1
COMMUT AT rNG
I--- Igl---t
dv/dt I
~~
t::=
~~
v
r~~r4-H~tt--i-t++~+--r~~~
PRINCIPAL
VOLTAGE
VGT -r-~: 1 10% POINT
~ 2o~~+H-tttlt---+--H_rl1+!1_--H+H_H1Jj
'l
COMMUT ATING
d.,,/dt
t
o-l - - ------ -
92LS-2409R4 92CS- 1336eR2
469 468
10-3 10- 2 10-1 r
TIME AFTER AppliCATION OF RECTANGULAR POWER PULSE-SECOM)S Fig. 15 - Relationship between supply voltage Fig. 16 - Relationship between off-state voltage,
9ZlS-2Z63RI
and principal current /inductive load) on-state current, and gate-trigger volt-
Fig. 13 - Transient junct;on-to-case thermal resistance showing reference points for definition age showing reference points for
vs. time for both series. of commutating voltage (dvldt). definition of turn-on time (tgl
600 _____________________________________________________________________
____________________________________________________________________ TRIACS
T6400, T6401, T6410, T6411, T6420, T6421 Series

(Includes 2N5441-2N5446, 2N5806-2N5809)
Features:
25-A, 30-A and40-A Silicon Triacs - dildt Capability::::; 100 A/JJs
- Shorted-Emitter, Center-Gate Design
For General Purpose AC Power Switching Application • Low Switching Losses
All 3D-A and 4D-A Triac.
- Low On-State Voltage at High
For Control·Systems Application in Airborne and Ground Support Type Equipment Current Levels
25-A. 400-Hz Triac. (2N5806-2N5809) - Low Thermal Resistance
Additional Features for the

2N5806-2N5809.-
These RCA triacs are gate-controlled full- systems. They can also be used in air- _ Available in JAN
wave silicon ac switches. They are designed conditioning and photocopying equip- - Com mutating dv/dt capability
to switch from an off-state to an on-state ment. Characterized at 400 Hz
for either polarity of applied voltage with Types 2N5441-43 and T6401 series em-
positive or negative gate triggering voltages. ploy a press-fit package. Types 2N5444- TERMINAL CONNECTIONS
These triacs are intended for control of ac 46. 2N5806-09, and 16411 series employ
loads in applications such as heating con- a stud package. T6421 series and T6421
trols, motor controls, arc-welding equip- series employ an isolated-stud pa.ckage.
ment, light dimmers, and power switching
MTI
2NS441 2N5442 2N5443

4D-A 2NS444 2N5445 2NS446 2N5441-43 T6401 series

For Operation with Sinusoidal Supply Voltage at Frequencies
3D-A
I{ TS;'OF
T6401F
T6411F
T6421F
T6420B
TS401B
T6411B
T6421B
T6420D
T6401D
T64110
T6421D
T6420E
TS401E
T6411E
T6421E
T6420M
T6401M
T6411M
T6421E
Press-Fit Types
(See dimensional outline "U.")
up to 501400 Hz and with Resistive or Inductive Load. 2N5B06 2N5B01 2N5BOB 2N5B09
2S-A
-REPETITIVE PEAK OFF·STATE VOLTAGE:- VOROM
Gate open. T J = -6510 1l00e ... . ....... . SO 200 400 SOO SOO V
RMS ON-STATE CURRENT (Conduction angle - 360°): ITIRMSI
Case temperature
T C = 70°C 12N5441;43. -Press·flt types) 40 A
= 65°C t2N5444·46. -Stud types) 40 A
= SOoC IT6420 series - I solated-stud types) . 40 A
'" 65°C 116401 series - Press-fit types) 30 A
= sooe IT6411 series - Stud typesl 30 A
'" 55°C (T6421 series - Isolated-stud types! . 30 A
'" BOoC (2N5BO&2N5B09 - Stud types! . 25 A
For other conditions .. _ _ _ _ See Figs_ 4, 5, 6
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:
For one cycle of applied prinCipal voltage. T C as above
2N5444-46.
60 Hz (sinusoidal - 3O-A & 40-A types) ............. . 300 A
50 Hz (sinusoidal - 30·A & 40·A types) 265 A 2N5806-09. T6411 series
400 Hz !sinusoidal - 25·A type~) 310 A Stud Types
60 Hz (sinusoidal - 25-A types) 200 A
50 Hz !sinusoidal· 25-A types) 110 A (See dimensional outline "Y.")
For more than once cycle of applied principal voltage .. - - - - See Figs. 7,B, 9
RATE OF CHANGE OF ON-STATE CURRENT; dl/dt
VOM =VDROM.I GT = 200 rnA, tr~O.l Ils 100 A/JJs
FUSING CURRENT (For Triac Protection):
IAt TC shown for ITIRMS)I:
t '" 20 ms (30-A & 40-A types) 500 A2,
= 2.5 ms (30-A & 40-A types) 250 A2,
= 0.5 ms t30-A & 40-A types) 145 A',
= 20 ms t25·A types! 240 A2,
= 2.5 ms 125·A types) 110 A',
=0.5 ms t25-A types) _ .. _ 65 A',
·PEAK GATE-TRIGGER CURRENT:-
For 1 JJs max .. See Fig. 15 IlO-A and 4O-A types only) 12 A
-GATE POWER QISSIPATION:
PEAK IFor lOps max., IGTM <;4 A, -30-A & 40-A typesl PGM 40 W
-25-A types) PGM 10 W 92CS-277~5RI
AVERAGE 130-A & 40-A typesl PGIAV) 0.75 W

T6420 series,
(25-A types, t = 16.6 ms) PGtAVI 0.5 W
-TEMPERATURE RANGE:· T6421 series
Storage (20-A & 40-A types) -65 to 150 ·c Isolated-Stud Types
(25-A types) -55 to 125 ·c
Operating tCasel - 40-A types. -65 to 110 ·c (See dimensional outline "X.")
- 30-A types_ . -65 to lOa ·c
- 25-A types. -40 to 115 ·c
-TERMINAL TEMPERATURE:
During soldering for 10 s max. (terminals and ease)
====== ~~======
WARNING: The ceramic of the isolated stud package
30-A & 40-A types
25-A types contains beryllium oxide. 00 not crush, grind, or
STUD TORaUE: abrade this part because the dust resulting from such
Recommended 35------ IO-Ib
kgf-m action may. be hazardous if inhaled. Disposal should
- - - - - - 0.4 - - - - - -
MaXimum (DO NOT EXCEEOI
= ===50---
0.57
1O·lb
kgl-m be
~_by_ burial.
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ___J
• In accordance With JEDEC registration data format IJS-14, ROF 21 filed for the JEQEC (2N·Sefles) types.
• For either polarity of maIO terminal 2 voltage (V MT2 ' with reference to main termlOal 1.
- For either polarity of gate voltage IVGI With reference to maIO terminal 1.
• For temperature measurement reference pOlOt, see OimenSlonal Outline.
_____________________________________________________________________ 601
TRIACS
T6400, T6401, T6410, T6411, T6420, T6421 Series
(Includes 2N5441-2N5446,2N5806-2N5809)
ELECTRICAL CHARACTERISTICS, At Maximum Ratings Otherwise Specified and at Indicated Case Temperature (TC)
LIMITS
CHARACTERISTICS SYMBOL UNITS
MIN, TYP.· MAX.
Peak Off·State Current:'
Gate open, VOAOM '" Max. rated value
TJ' 11000C, 140·A types) ... . . . . ........... . 0.2 4'
'" lODDe. (30·A types •.. , ....• , ..............•.. 10ROM 0.2 4 rnA
=115°C. 125-A types) .•..•. . ....••.•.. 0.2 2'
For iT '" 100 A (peakl. TC = 25°C. (40·A tYpes) 1.7 2
For iT =56 A (peak), TC = 25°C, (40·A types) . 1.5 1.85'
'V
For iT '" l00A (peak), TC = 25°C, {3D-A types) .•..• , ..... 2.1 2.5
.. 35 A (peak), pulse width <: 1 ms,
duty cycle" 2%, 'G = 150 rnA. TC '" 25°C (25·A types) .• 1.3 1.6'
Gate open, Initial principal current;;: 500 rnA (dc). Vo =- 12V: Fig. 1 - Power dissipation vs. on-state current
TC ::: 25°C 130·A &: 40-A types) 25 60 for 2N5441-46, and T6420 series.
;; 25°C (25·A types) 30 75
'" _65°C (40·A types) . 100' rnA
= _40°C (25·A types) .. . 45 100·
For other case temperatures . . . . . . . . . . See Figs. 13 & 14
Critical Rate of Rise of Commutation Voltage:'
vo '" VOROM. IT(RMS) = 40 A. commutating
di/dt = 22 Alms. gate unenergized.
TC E 70D C f40-A. Press·fit types) 5' 30
'" 65D C (40-A, Stud·types) .............•. 5' 30
= 6QoC (40·A, Isolated·stud types) ...... . 5' 30
vO '" VOROM. 'TIAMS) = 30 A. commutating dv/dt
dildt ;; 16 Alms. gate unenergized.
TC'" 65D C (30·A, Press·fit typesJ. . . . . . . . . . . . . • . . . • . . • 20
... 6O"C (30·A, Stud types) . . . . . . . . . . . . 20
'" 55°C. (3D·A. Isolated·stud types) .... . 20
Vo II: VOROM. ITeRMS) - 25 A. commutating
di/dt E 88 Alms, gate unenergized
TC· 80"C 125·A, Stud types) ........... .
Critical Rate·of·Rise of Off·State Voltage:'
Fig, 2 - Power dissipation vs. on-state current
For YO = VOROM. exponential voltage rise. gate open
TC = 110"C 14D·A types): for T6401, T6411, T6421 series,
2N5441, 2N5444, T64208 50' 200
2N5442, 2N5445, T64200 30' 150
2N5443, 2N5446. T6420M 20' 100
dv/dt Vlp.s
TC' l00"C (30·Atypes):

T64018, T64118, T64218 40 200
T64010. T6411D. T64210 25 150
T6401M, T6411M, T6421M 20 100
TC'" 115°C 125·Atypes) •.•..... 20 100
DC Gate·Trigger Current:'.
vO'" 12 V (de) RL = 30n TC = 25°C
Mode VMT2 VG
1+ positive positive (40·A & 30·A types) .. : 15 50
(25·A types) ,....•... 20 80
III~ negative negative (4Q-A & 30'A types) ...... , 20 50
(25·A types) .... . 50 80
1- positive negative (40-A & '3D·A types) ...... . 30 80 FULL- CYCLE RMS ON-STATE CURRENT [ITUtMsil-A
(25·A types) . . . . . . . . . • . . 80 80
111+ negative positive (4()'A & 30-A types)-..... 40 80
125·A types) ..•.....•.. 100 150 Fig. 3 - Power dissipation vs. on-state current
rnA for ,2N5806-2N5809.
'0-12 V (de) RL' 30U TC - -65"C
Mode VMT2 VG
1+ positive positive 40.A ~
...•......•.. 126·
lil- negative negat~ve types' . . . . . . • . . . . . 125'
I~~+ :;~~~: ;:;t~~:

240'
only 240·
'0 -12 V Ide) RL - 25U TC - 40"C
Mode VMT2 VG
I~~- :;~~~: :~~i:: ~

1- positive negative ::5 ............ .
25-A : :: :::: :::: ::
32
98
120
120
170
111+ negative positive .•...... _ ... .
DC Gate·Trigger Voltage:'.
' 0 ' 12 V Ide), RL • lOU,
TC • 25°C 1lO·A & 40·A types) . . . . . . . . . . . . . . . .. 1.35 2.5
.. -65°C (4()'A types only) .....•..•.••....•.. 1.8 3.4'
F~
For other case temperatures ....•...........•.•...••• V
' 0 ' VOROM, RL' 126U, TC • 110°C 140·A types) 0.2 je 20
.. uxtc (3()'A types) 0.2
1
Fig. 4 - Maximum allowable case temperature
vs. on-state current for 2N5441-46,
and 6420 series.
602
____________________________________________________________________ TRIACS
T6400, T6401, T6410, T6411, T6420, T6421 Series

(Includes 2N5441-2N5446,2N5806-2N5809)
ELECTRICAL' CHARACTERISTICS. At Maximum Ratings Otherwise Specified and at Indicated Case Temperature (TcJ CURRENT WAVEFORM: SINUSOIDAL
LOAO' RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE' 360·
LIMITS CASE TEMPERATURE:MEASUREQ
CHARACTERISTICS SYMBOL UNITS AS SHOWN ON OIMENSIONAL OUTliNES
MIN. TYP. MAX. ~ 100
eOl<!>UCTtO"UGL(
DC Gate-Trigger Voltage: , . ~ "I+alll
\10= 12V(dcl. RL"'2S0 ~ 90
Triggering Modes 1+. 111-, 1- 125-A types), TC=2SoC. 2.5

= -40°C. VGT 2.6 4" V ~ e STUD TYPES
Triggering Modes 111+ (25·A types). Te = 25°C 4

YO=12V(dc). AL=lkn,
Triggering Modes 1+, 111-, 1- (25·A types): Te:: 115°C .. 0.15
ISOLATED-STUD TYPES
Gate-Controlled Turn-On Time:
10 20 30 40
YO = VOROM. IGT:: 200 rnA. tr = O.llls,
1.7 FULL CYCLE RMS ON-STATE CURRENT [InRw,il] -:ZSS-38I2RZ
iT'" 60 A (peak). T C :: 2SQ C (40-A types)
11'0 = VOROM' IGT = 200 rnA. tr = 0.1 jJ.s, t.t P' Fig. 5 - Maximum allowable case temperature
iT= 45 A (peakl. TC= 2SQC (30·A types) 1.7
vs. on-state curren t for T640 1, T6411,
\/0 = VOROM' IGT '" 150 rnA, tr = O.llls.
iT = 60 A (peak), T C = 25°C 125-A types) 1.6 T6421 series.
Thermal Resistance, Junction-to-Case: CURRENT WAVEFORM SINUSOIDAL
LOAD. RESISTIVE OR INDUCTIVE
Steady·State
CONDUCTION ANGLE 8 ,360·
Press·fit types ..... O.S" ,-
ou
CASE TEMPERATURE ITc I: MEASURED AS
DClW ~I SHOWN ON DIMENSIONAL OUTLINE
Stud types ..... ROJC 0.9"
Stud types (25-A types only) 1.23" i~
Isolated·stud types ; 120
Transient (Press·fit & stud types) See Fig_ 24
Thermal Resistance, Junction·to-Ambient g ItO
CONoocnONANGlE8
Steady-State (25·A types only) .. ROJA 50"
~KXl 'r+B.m.
.. In accordance wIth JEDEC regIstratIOn data format (JS·14, RDF 2) field for the JEDEC (2N·Senes) types. :i
'For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1. • 90
• For either polarity of gate voltage (VGl with reference to main terminal 1. ~,80
i
10 ZO 30 40
FULL CYCLE RNS ON-STATE CURRENT [X.nRMsil-A
~~D~~:~A~~~URRENT
[IT(RMSil' 040 A AT I Fig. 6 - Maximum allowable case temperature
~ 300 .SPECIFIED CASE T~MP.. I
vs. on·state current for 2N5806·
F.
~. ;!50 .•'\.
GATE CONTRci~ IMAy SE LOST
~~=~~G c~~~~~~~~~:i~![~LLOWING
~.~p,~"-r~HHf#~~~u=nu~~~.~~L.~.-,,U~~~ 2N5809.
r>. 'Po:~,+t-ti-tttt--i= ~rx:::~~l.OWIItG
~~!~.i""" ~.1 ~~~D~~~~~~~~~RRENT [lTIRMSJl
J \ II I
OVERLOAD MAY NOT 8E REPEATED AT
_ UNTIL JUNCTION TEMPERATURE HAS OYDlLOAO MAYNOTIEMPEAnO
~"i UNn...lUNCTlDftIT£fIIP(ltA~"'AS 600 RATED CURRENT AND SPECIFIED
RETURNED TO STEADY-STATE
~fi.oqf-+""'''"''tttll"",,,\"..rl ~~...~(s:rrAO"-ST.t.TE
~
CASE TEMPERATURE lTe )
~i" $'DVALU' ~~ l5of-+-1H+ttltt.I""".t~:::I>..kHttHlr-t-++++tt1i il 5001--- r---- I II I I I II

GATE CONTROL MAY BE LOST
;!~H+~I~~'''~ffir~~~
DURING AND IMMEDIATELY FOLLOWING
SURGE CURRENT INTERVAL.
><
El 4 00 r--- OvERLOAD MAY NOT 8E REPEATED
f
~ 'oi-t-H-+1-1ttt-+-t+-ttttH--H-tttttH
~
~~ ~ i"-...
i~300
UNTIL JUNCTION TEMPERATURE HAS
RETURNED TO STEADY-STATE RATED VALUE.
I II I
I 10 4 • a toe Z
'l----+++l+fflI--H+I++Hl---++++++Hl
'~:s
la 20 ~ ~ .J I I
'Il-
I 10 4 • '102. I: 4
SURGE CUftRENT DUAATIOM -FULL CYCLES SURGE CURRENT DURATI()toI-FULL CYClES 92SS-3815RZ
~ 100 SOH:
r-- r-
Fig. 7 - Peak surge on-state current vs. surge
current duration for 2N5441·46,
and T6420 series.
current duration for T6401, T64",
T6421 series.
, . 6 •
r-:
10
, ... , , . ..
10 10'

current duration for 2N5806·2N5809.
,
lNSTAIHANEQUS ON-STATE VOLTAGE !YT 1-....
.LS-n"'z \POSITIVE OR NEGATIVE)
Fig. 10 - On-state current vs. on-state voltage

for 2N5441·46, and T6420 series. Fig. 11 - On-state current vs. on-state voltage Fig. 12 - On-state current vs. on·state voltage
for T6401, T64", T6421 series. for 2N5806·2N5809.
________________________________________________________________________ 603
TRIACS
T6400, T6401, T6410, T6411, T6420, T6421 Series
(Includes 2N5441-2N5446, 2N5806-2N5809)
tASE TEMPERATURE fTC t-·c ••cs·Il'....?

...
DC GATE-TRIGGER c:LltRENT "6yl-.
(POSITIVE OR NEGATIVE I
Fig. 13 - DC holding current vs. case tempera· Fig. 14 - DC holding current vs. case tempera· Fig. 15 - Gate·trigger characteristics and limit·
ture for2N5441-46, T6420, T6401, ture for 2N5806-2N5809 series. ing conditions for determinatlon of
T64", T6421 series. permissable gate-trigger pulses for
2N5441-46, T6420, T6401, T641',
T6421 series.
CASE TEMPERATURE 11CI_oc

CASE T.U • • • • ~ " • • , .••.••.:c.,
Fig. 17 - DC gate· trigger current vs. case tem·
Fig. 16 - DC gate·trigger current vs. case tern· perature ,,- & 111+ modes) for
perature (1+ & 111- modes) for 2N5441-46, T6420, T6401, T64", 9iCS-2T•••
Fig. 18 - DC gate· trigger current vs. case tem·
2N5441-46, T6420, T6401, T6411,
T6421 series.
T6421 series.
perature (1+ & modes) for II,
2N5806-2N5809.
CASE TEMPERATURE I1CI_oC
Fig. 20 - DC gate· trigger voltage vs. case tem·

Fig. 19 - DC gate· trigger current vs. case tern·
perature for 2N5441-46, T6420, Fig. 21 - DC gate· trigger voltage vs. case tern·
perature (1- mode) for 2N5806·
2N5809. T640 1, T6411. T6421 series. perature for 2N5806-2N5809.
~ '00 I IIII! I II
w~ i ! I" ! )-tr'
~~
1...1 80
I , ,
i Y i:
~.
~ffi
I i i VI
......-; I
: : 60
o~
I , V' I
e , lZ't V :1 I,
~
~ 2 .'
tJ~ .0
't~
~
-- rr I,
, i
,
'H'
5 I ~
20
i ; 1'1" Ii 'I,'
so I!lO 200 2110
DC GATE-TRIGGER CURRENT 116rl-IIIA

300 350 'lao 450
DC GATE-TRIGGER CURI't£NT
,
Icirl-mA
0
TIME AFTER
D-3
, .I••
APPLICATION
10-2
, I jJ! :il 10-1
! I Ijlj
OF RECTANGULAR POWER PULSE-SECONlS
. I
92LS-226:5R1
Fig. 22 - Turn·on time vs. gate· trigger current Fig. 24 - Transient junction-to-case thermal
for 2N5441·46, T6420, T6401, Fig. 23 - Typical turn·on time vs. gate· trigger resistance vs. time for press.,it and
T6411, T6421series. current for 2N5806·2N5809. stud types.
604 ________________________________________________________________________
_______________________________________________________________________ TRIACS
T6404, T6405, T6414, T6415 Series
400-Hz, 25 & 40-A Silicon Triacs Features:

• RMS On·State Current -
For Control·Systems Application in Airborne and Ground·Support Type Equipment IT(RMS) = 25A: T6405 and T64 15 Series
'" 40A: T6404 and T6414 Series
These RCA triacs are gate-controlled full-wave silicon ac 208 V RMS sine wave and repetitive peak off-state voltages • Commutating dv/dt Capability Characterized at 400 Hz
switches. They are designed to switch from an off-state to an of 200 V and 400 V. • Shorted-Emitter Center-Gate Design
on-state for either polarity of applied voltage with positive These triac$ exhibit commutating voltage (dv/dtl capability • dildt Capability ;; 100 A/p.s
or negative gate triggering voltages. at high commutating current (di/dt). They can also be used
They are intended for operation at 400 Hz with resistive in 50-Hz applications where high commutating capability TERMINAL CONNECTIONS
or inductive loads and nominal line voltages of 115 and is required.
T6404B T6404D T6404E
MAXIMUM RATINGS, Absolute·Maximum Values: T6405B T6405D T6405E
For Operarion with Sinusoidal Supplv Valtage at 400 Hz and with Resistive ar Inductive Load. T6414B T6414D
REPETITIVE PEAK OFF·STATE VOL TAGE:- VDROM T6415B T6415D MTI
Gate open. T J = -50 to 1100 C 200 400 500 V
RMS ON·STATE CURRENT (Conduction Angle = 3600): ITIRMS)
Case temperature
TC = 850 C (T6405 Series) . ---25--- A
800 C (T6415 Series) .. ---25--- A
700 C (T6404 Series) ---40--- A
650 C (T6414 Series) ---40--- A T6404 Series
For other conditions - - See Fig. 2 - T6405 Series
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT' 'T5M
For one cycle of applied principal voltage, TC as above Press-fit
400 Hz (sinusoidal) .. ---600---
60 Hz !sinusoidal} ---300---
(See dimensional outline "U".)
A
50 Hz (sinusoidal) ---265--- A
For more than one cycle of applied principal voltage - - S e e Fig. 3 - -
YOM = VOROM, IGT = 200 rnA, tr = 0.1 IlS ---100-- A/Ils
FUSING CURRENT (for Triac Protection)' I', _ _ _ 270 _ _
TJ=-50to1100C,t=l,25t010 ms A',
PEAK GATE·TRIGGER CURRENT:- IGTM
For 1 /-is rna". (See Fig, 7) .. ---12--- A
Peak (For 10 /-is rna"" IGTM ~4 A (peak), (See Fig. lJ . PGM ---42-- W
Average . PG(AV) ---0.75--- W
TEMPERATURE RANGE:'"
Storage ... ,., ........... . T stg ---50t0150-- DC
Operating (Case) Tc - - - 5 0 to 1 1 0 - - DC
TERMINAL TEMPERATURE (During soldering): TT
For 10 S rna", (terminals and casel . ---225--- DC
STUD TORUUI;;:
T6414 Series
Recommended. 35 in.-Ib
Ma"imum (DO NOT EXCEED). , , " 50 in.-Ib
TG415 Series
Stud
- For either polerity of main terminal 2 voltage (VMT21 with reference to main terminal 1.
• For either polarity of gete voltage (VGI with reference to main terminal 1 . (See dimensional outline "Y".)
... For temperBtl.lre mNsurement ref.r.,.,ce point se. Dimensional Outline.
CONDUCTION ANGLE ' 360·
LOAD: RESISTIVE
RMS ON-STATE CURRENT [IT(RMS1} RATED VALUE AT
SPECIFIED CASE TEMPERATURE
I
CASE TEMPERATURE' MEASURED AS
SHOWN ON DIMENSIONAL OUTLINES
fr Llel §, '00 1\ I I II I
GATE CONTROL MAY BE LOST
CO~D~Ct,o~ ~~GLE
fir .a m f <l 500 ~~~~~G c~~~~~~EI~~;~~!~OLLOWING
~l OVERLOAD MAY NOT BE REPEATED
t= ::;:400 UNTIL JUNCTION TEMPERATURE HAS
~~ 1--1---"~+-I+~~i~~~~~J~ STEADY-STIITE
"'-
40791,40792
~ns n'oo~ '010) I
~ 2D0I-_I-~_
~H"H~""'~ ': ++-+--+++1
"1'r~~"T'::::::::
H:":::::::;' i'"
.. ",."".':::,: ':: " oJ
'===1"I--"I-=--+-1-+1 :ik
._::::b:··~i::::g::m::!!':::"· o ~ ~ ~ 40
~ W ~ ~ ~O
FULL CYCLE RMS ON-STATE CURRENT [!T(RMS~~~S~1794~ I II
FULL-CYCLE RMS ON-STATE CURRHn[ITIRMS.]-A I 10 4 6 B 10. l 4 6 1803
SURGE CURRENT DURATION -FULL CYCLES
Fig. 2-Maximum allowable case tempera- Fig. 3-Peak surge on-state current vs.
Fig. 1-Power dissipation vs. on-state current. ture vs. on-state current. surge current duration.
I IN M S:ALL
IDOe ENCLOSED AREA INDICATES LOCUS Of
6 I TRI RI I T
I
J;
i~ lOB
..
~~ .rY";--j-fo,:::,
;i ';~~~~~~.4~~~~~~~~~~~~
, 4 6 a I 4 6 a 10
CASE TEMPERATURE (1Cl-"C
INSTANTANEOUS ON-STATE VOLTAGE (vT1-V DC GATE-TRIGGER CURRENT (tGT}~A
(POSITIVE OR NEGATIVE) 9lCS'I19~1 (POSITIVE OR NEGATIVE)
Fig. 6-Gate-trigger characteristics and

limiting conditions for determina-
Fig. 4-0n-state current vs. on-state voltage. Fig. 5-DC holding current vs. case temperature. tion of permissible gate-trigger pulses.
__________________________________________________ ~ _________________ 605

TRIACS
T6404, T6405, T6414, T6415 Series

At Maximum Ratings and at Indicated Case Tempwature (TC) Unless Otherwise Specified
CHARACTERISTIC SYMBOL 1-:=-rL::;IM;;;I;,;T,:,Sr.:=-i UNITS

Min. Typ. Max.
Peak Off·State Curtent:'

Gate open, T J = 1100 C. VOROM '" Max, rated value .............. . IDRDM 0.2 mA
For iT' 100 A (peak!, TC' 250 C: v
T6405 & T6415 Series ............•.............•........... 1.7 2.5
T6404 & T6414 Series ............•...............•......... 1.7 2
DC Holding Cunant:'
yo;; 12 V.
Gate open, Initial principal current;;; 500 mA (DCI.
~.~C ....................................... . 30 90 mA
For other case temperatures .............................. . See Fill. 6
Fig. 7-DC gate-trigger current vs. case
Critical Rate-of-Rise of Commuta1ion Voltage:'
For "0 = VOROM. 'T{RMS) = rated value, gate unenergized.
temperature ,,+
and 111- modes).
Commutating dUdt = 88 Alms

T C = 850 C (T6405 Series) ...........................•. dvfdt Vips
.. SOD C IT641S Series) ........................ _ ... .
Commutatingdi/dt = 141 Alms
T C • 700 C (T6404 Seriesl ............................ .
·650 C (T6414 Seriesl ............................ .
Critical Rate-of·Rise of Off-State Voltage:'
For vO '" VOROM, exponential voltage rise, gate open, TC:::: 1100 C: dv/dt Vips
. T6>l05 & T6415S"ie•.................................... 30 150
T6404 & T6414 Serie•.................................... 50 200
DC Gate-Trigger Current:.t Mode VG VMT2
Farve '12 V (DCI, 1+ positive positive 20 80
RL '30n, 111- negative negative IGT 50 80 mA
TC -25°C 1-
poSitive negative 80 120
111+
negative positive 80 120
For other case temperatures ............................•.... See Figs. 7& 8 Fig. 8-DC gate-trigger curren t vs. case
rr
DC Gate·Trigger Voltage:6t
For yo '12 V(DCI, RL '30 n, TC '250 C ........... ; ......... .
For other case temperatures : .......... _................... .
VGT -I I 2
See Fig. 9
V
temperature and 111+ modes).
Forvo' VOROM, RL -125n, TC' llOOC ................... . 0.2

Gate-Controlled Turn..()n Time:
For yo • VDROM, IGT • 150 rnA, tr • 0.1 ps,
iT-60A (peakl, TC' 250C (See Fig.l01, 1.6 2.5
.............................
Thermal Resistance. Junction·to·Case:
Steady·State
=.~j~~~~.
0.8
OJ·C °CIW
0.9
Transient (Press-fit & stud types) .............................. . See Fig. 12
• For elthe' poI.,,,ty of rnaln terminal 2 voltage IVMT21 With reference to main terminal 1.
t Foreittter polantyof gate voltage 'VGI wilh reference 10 main terminal 1.
Fig. 9-DC gate-trigger voltage vs. case

. temperature.
i
I~o
l:i 10
V
~
el
:os;
eo
i~ V
Max.MUM ~~ 40
TYPical.
~I 2Or--
H ~ • _ ~ 00 R _ m
~
JO"'S
.. 10-1:
, .. 10"" I
DC GAn:~TRIGGEIt CURRENT (tGTI-mA. TIME AFTER APPLtCATDI OF RECTANGUlAR POW£R PlLSE-SECOfa,
...........
Fig. 10-Turn-on time vs. gate-triyger current. Fig. 11-CDmmutating voltage vs. Fig. 12-Transient junction·to-case thermal
commutating current. resistance vs. time.
~----------------------------------------------------------------
____________________________________________________________________ TRIACS
Zero-Voltage-Switched Types
2.5-40 A, 100-600 V Silicon Triacs for Use With Ie

Zero-Voltage Switches RATINGS AND CHARACTERISTICS
For Power-Control and Switching Applications All types, at case temperature ITel: 25 0 C, 1+ and 111+ triggering modes,""
IGT c 45 rnA max., VGT 1.5 V max.
C
at 50-60 Hz with RCA-CA3058,

CA3059, or CA3079 IC as Trigger Circuits Rep. Peak RMS On-State Typ_DC For
Off-State Current Holding additional
Type Current at
data. see
Voltage IT(RMS) Package Basic
The triacs Iisted below are gate-controlled No_ 25 0 C,IHO
VDR?M at Case Temp_ Farnil"
full-wave ac switches intended for load- (V (A) (DC) (rnA) Types
control applications_ They are especially
useful in ac circuits for heating controls T2306A 100 2.5 70 6
(proportional or on-off!, lamp switching, T2306B 200 2.5 70 6 Mod. TO-5 T2300
motor switching, and a wide variety of T2306D 400 2.5 70 6
other power-control applications. T2316A 100 2.5 70 6
T2316B Mod. TO-5 on
These devices have gate characteristics which 200 2.5 70 6 T2310
T2316D 400 70 Heat Radiator
assure that an RCA-CA3058, CA3059, or 2.5 6
CA3079 integrated circuit can supply suf- T2506B 200 6 80 15
T2506D 400 6 80 15 TO·220AB T2500
ficient drive current to trigger them over
their full operating-temperature range (-400C T2706B 200 6 75 15
to +85 0 C)_ T2706D 400 6 75 15 TO-66 T2700
The RCA-CA3058, CA3059, and CA307~ T2716B 200 6 75 15 TO-66 with
are monolithic silicon integrated-circuit zero- T2716D 400 6 75 15 Heat Radiator T2710
voltage switches which can operate directly T2806B 200 8 80 15
from the ac line. They are designed to drive T2806C 300 8 80 15 TO-220AB T2800
the triac gate directly and provide the gating T2806D 400 8 80 15
signal at zero-voltage crossings for minimum T2806M 600 8 80 15
radio-frequency interference.
T2856B 200 8 75 15 Isolated-Tab
These triacs have rms on-state current ratings T2856C 300 8 75 15 T2850
that range from 2.5 to 40 amperes, and 75 15 TO-220AB
T2856D 400 8
repetitive off-state voltage ratings from 100
to 600 volts. They are suppl ied in a variety T4106B 200 15 80 20
of packages. T4106D 400 15 80 20 Press-fit T4100
T4106M 600 15 80 20
T4116B 200 15 80 20
T4116D 400 15 80 20 Stud T4110
T4116M 600 15 80 20
T4117B 200 10 85 15
T4117D 400 10 85 15 Stud T4111
T4117M 600 10 85 15
T4126B 200 15 75 20
Isolated
T41260 400 15 75 20 T4120
15 75 20 Stud
T4126M 600
T6406B 200 40 70 45
T6406D 400 40 70 45 Press·fit T6404
T6406E 500 40 70 45
T6406M 600 40 70 45
T6407B 200 30 65 25
Technical information on RCA-CA3058, CA3059, Press·fit
and CA3079 is contained in bulletin File No. 490. T6407D 400 30 65 25 T6401
500 30 25 "
For detailed application information, see Appli- T6407E 65
cation Note ICAN-6182, "Features and Application T6407M 600 30 65 25
of RCA Integrated-Circuit Zero-Voltage Switches", T64168 200 40 25
65
T64160 400 40 65 25 Stud T641 0
T6416M 600 40 65 25
T64178 200 30 60 25
T64170 400 30 60 25 Stud T641 0
T6417M 600 30 60 25
WARNING: The ceramic of the isolated stud package T6426B 200 40 60 25
T6426D 400 40 60 25 Isolated
contains beryllium oxide. Do not crush, grind, or T6420
T6426M 600 40 60 25 Stud
abrade this part because the dust resulting from such
action may be hazardous if inhaled. Disposal should T6427B 200 30 55 25
be by burial. T64270 400 30 55 25 Isolated
Stud T6420
T6427M 600 30 55 25
.to A tflac driven directly from the output terminal of the CA305S; CA3059. or CA3079 should be
characterized for operation in the 1+ or 111+ triggering mode, i.e., with positive gate current (cur-
rent flows into the gate for both polarities of the applied ac voltage).
* Except for gate characteristics, data for basic family types also apply Lo the types listed in
this chart.
________________________________________________________________________ 607
608 _____________________________________________________________________
Silicon Controlled
Rectifiers (SCR's)
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ 609
SILICON CONTROLLED RECTIFIERS
C106 Series
4-A Sensitive-Gate Silicon Controlled Rectifiers

For Power-Switching and Control Applications
The RCA-C1 06 series of sensitive-gate silicon These SCR's have microampere gate-
controlled rectifiers are designed for switching current requirements which permit opera- Features:
ac and dc currents. The types within the series tion with low-level logic circuits. They can • Microampere gate sensitivity
differ in their voltage ratings; the' voltage ratings be used for lighting, power-switching, and • 600-V capability
are identified by suffix letters in the type motor-speed controls, and for gate-current • 3.5-A(rml) on-ltate current ratings
designations. amplification for driving larger SCR's. • '20-A peak surge capability
• Glass-passivated chip for stability
All types in ihe series utilize theJEDEC-TO- • Low thermal resistances
202AB (RCA VERSATAB) plastic package_ • Surge capability curve
• Package and formed-lead options available
I I I I
. MAXIMUM RATINGS, Absolute-Maximum Values: Cl06A Cl0SC Cl06E TERM 4
·'::tf I:)@"'~ ::::,

Cl06F Cl06B Cl06D Cl06M
V RSXM : Cl07F Cl07B Cl07D Cl07M
RGK = 1000 11, T C = -40'0 110°C ... ( Cl08F C10BB Cl08D Cl08M
CATHODE
V DSXM :
RGK = 1000 11, TC = -40 to 110°C
V RRXM :
..... 5 75 125 25C 400 500 600 700 V
TOP VIEW
TERM 3 2 I
RGK = 1000 1!, T C = -40'0 110°C ....... ( 30 50 100 200 300 400 500 600 V
92CS-29320
V DRXM '
RGK = 1000 1!. T C = -40 to 110°C
'TIAV) IT C =450C," =180°) .. __ ..
....... 5 2.2 A
JEDEC TO-202AB
(See dimensional outline "P".)
'TIRMS) ITC = 45°C, ,,= 180°1. 3.5 A
'TIDC) IT C = 70°C) 2.6 A
CURREHT WAVEfOftM:SlNUSOIDAL •
'TSM: LOAD:RESISTIVE OR INOUCTIVE
f f
·- .
For one cycle of applied principal voltage, TC=4SoC 14 T AH LE 81-!8(t
60 Hz (sinusoidal) .. 20 A o
50 Hz (sinusoidal) 18.5 A
For more than one cycle of applied principal voltage •... See Fig. 11 ~
~ 0
'GM I. = 10 ~,) 0.2 A
V GRM · 6 V ~
"
di/dl:
V DM=V DROM' 'GT = 1 rnA. 'r = 0.5 ~', TC = 110°C 100 AI~s
•
2 '
,2. IAt TC shown for 'T(RMS)J:
t = 10 rns................ . ................... . 1.77 A2,
8.33m, ... _ .. _ .. ,.,. 1.67 A2,
lms .............. , 0.82 A2, I 2: 3 4 5
AVERAGE OR DC ON -STATE CURRENT [ITIA..,} OR Inoc)]-A
~GM IFor 10~, max.) 0.5 W
0.1 . .;7 3:14 ' 4:71 6.28 ' T.85
PG(AV) (Averaging time'" 10 ms max'.) W
RNS ON-STATE CURRENT [InRMS1]-A
Tstg ··,·················· . -40'0 +150 °c 92C$-:i!920)
T C ' - _ ....... _.' 40'0+110 °c Flg.1 -. Power dissipation as a function of average

TT (During soldering for 10 s max. .. 250 °c dc, or rms on-state current.
CURRENT WAVEFORM: stNUSOIDAL

LOAD: RESISTIVE OR INDUCTIVE .•DC OPERATION
CONDUCTION ANGLE(8)-180·
CASE TEMPERATURE MEASURED AS
SHOWN ON DIMENSIONAL OUTLINE
IIo 1--f--U80.
CONDUCTION
ANGLE,S
YPE 2
AMBIENTT P.
I 2 :3 4 0.51 L522.533.!544.S 10 4 5 8 100 4 6 '000
AVERAGE ON-STATE CURRENT [ITeAvj]-A DC ON-STATE CURRENT [ITeDC)l-A
SURGE CURRENT DURATION - FULL CYCLES
l.b7 ! 3~4 ' 4.~1 ! 08 d!5 '2CS-29205RI 92CS~29C!.12Rt
RMS ON-STATE CURRENT [IT(RMS)J-A

, ItCS-29204f11
Fig. 4 - Peak surge on~state current as a function
Fig. 2 - Maximum allowable case temperature as a Fig. 3 - Maximum allowable case temperature as a of sUrge current duration.
function of average or rms on-state current. function of dc on-state current for C106
series.
610 ________________________________~_____________________________________
SILICON CONTROLLED RECTIFIERS
C106 Series
ELECTRICAL CHARACTERISTICS '000, SINGLE -HALf -SINE -WAVE PULSE (NON-REPETITIVE)

REAPPLIED BLOCKING VOLTAGE-O
~ 6 IGT·l mA SQUARE PULSE, 10,u.s DURATION
~
LIMITS , CASE TEMPEAATURE (TCl-25·C
FOR ALL TYPES
UNLESS
t
~I 2
I--
r---.- IIII
CHARACTERISTIC
OTHERWISE UNITS
~~
~t!IOO
'-.......
r-.....
UNSAFE-AREA
OF OPERATION
SPECIFIEO , .....,..
Min. Typ. Max. ~~ ,
3~
r--....
.........
I III
Y\~
~~
~u 4
IORXM or IRRXM:
Vo = VORXM or VR = VRRXM, RGK = 1000 n
~ SURGE SAFE-AREA
~ CURRENT OF OPERATION
TC = 25°C . - 0.1 10 }1A ~
~ 2 - ---*--
~ ~ I"-
TC=1100C - 10 100 '0
0.01
PULSE
OURATION

1981 RCA Power Devices

Hochgeladen von

Dokumentinformationen

Copyright

Verfügbare Formate

Dieses Dokument teilen

Dokument teilen oder einbetten

Freigabeoptionen

Stufen Sie dieses Dokument als nützlich ein?

Sind diese Inhalte unangemessen?

Copyright:

Verfügbare Formate

1981 RCA Power Devices

Hochgeladen von

Copyright:

Verfügbare Formate

nOli Solid

Information furnished by RCA is believed to be accurate and reliable.

Copyright 1981 by RCA Corporation

•JAN-type versions also available ~ vCER

•JAN-type versions also available " VCER

tJTR - Integrated Thyristor/Rectifier +VORXM

Power Transistors Product Matrix

Hometaxial-Base (Single-Diffused) N-P-N Types

'emax. = 1.5 A 'emax. = 4A 'emax. =4A 'emax. = 3A 'emax. = 3A 'emax. =7 A

2N1482 2N3054 2N5298 2N3441 2N6478 2N5496

2N1482 2N3054 2N5298 2N3441 2N6477 2N5492

40348 2N6261 2N5294 2N6264 2N6478 2N5496

'emax. = 15A 'emax.: 16A 'emax. = 10A 'emax. = 30A 'emax. = 16 A

2N3055 2N6103 2N3442 2N3772 2N3773

2N6371 2N61 03 2N4347 2N3771 2N4348

2N6254 2N6101 2N6262 ReS258 2N6259

Power Transistors Product Matrix

2N5783 2N6374 2N5954 2N6292 2N61 07 2N3716 2N6472

2N5783 2N6374 2N5956 2N6669 2N6111 2N6569 2N6470

2N5782 2N6372 2N5954 2N6292 2N6107 2N3055 2N6471

2N5781 2N6465 2N6467 2N6473 2N6475 2N3716 2N6472

2N6466 2N6468 2N6474 2N6476 2N5878

2N6247 2N6488 2N6491 2N5303 RCA8638 RCA9116

2N6594 2N6486 2N6489 2N5301 RCA8638E RCA9116E

2N5875 2N6487 2N6490 2N5302 .RCA3773 2N6609

2N5880 2N6488 2N6491 2N5303 RCA8638C RCA9116C

2N6248 MJ15003 MJl5004

Power Transistors Product Matrix

High-Speed-Switching N-P-N and P-N-P Types

lemu.~1A lemu.=-1A lemu.=2A lemu.=-2A lemu.=7A

2N2102 2N4038 2N5320 2N5322 2N3878

2N3053 2N4037 2N5321 2N5323 2N5202

2N2270 2N4038 2NS320 2NS322 2N3878

2N2102 2N4314 2N3879

2N8704 2N8480 2N5038 2NS871 2N6888 2N8033

Power Transistors Product Matrix

High-Voltage N-P-N and P-N-P Types

lemu.=1A lemu.=-1 A lemax. =5 A lemu.=-5A lemu.=7A lemu.=5A

2N3439 2N5415 2N3585 2N8213 2N8079 2N5240

40348 ReA1A18 2N3583 2N8211 2N8078 2N5239

2N3440 2N5415 2N3584 2N8213 2N8077 2N5240

2N3439 2N5418 . 2N3585 2N6214 2N8079 2N5840

2N8251 2N6308 2N8510 RCA8766 2N6873 2N8678 2N8893

2N8249 2N8306 2N65io RCA8766 2N8871- 2N8674- 2N6689-

2N8250 2N8307 2N6514 RCA8768B 2N6872- 2N8878- 2N6690-

2N8251 2N8308 2N8513 RCA8766D 2N8873- 2N8878- 2N8693-

Power Transistors Product Matrix

Monolithic Darlington N-P-N and P-N-P Types

2N8888 2N8388 2N8385 2N8850 2N8284 2N8287 2N8537 RCA8788

2N8888 2N8386 2N8055 2N8848 2N8282 2N8285 2N8534 RCA8788

2N8887 2N8387 2N8383 2N8649 2N6283 2N6288 2N8535 RCA87888

2N8888 2N8388 2N6385 2N6650 2N6284 2N6287 2N8536 RCA8788D

2N6533 2N6578 2N6537

Transistors for Audio-Amplifier Applications

Power Hybrid Comparison Chart

HC2000H - Applications HC2500 - Applications

Ratings and i=eatures for HC2000H and HC2500

SUPPLY VOLTAGE: Bandwidth: 30 kHz at 60 W

HC2500 0.06% NO 'CLASS AB CAPACITOR ON NO

Socket for both types: RCA part DG·293A, or

Triac Product Matrix

RCA TO-205MA/TO-5 Mod_ TO-205MA/TO-5 With TO-202AB

Triac Product Matrix

RCA Press-Fit Isolated TO-220AB

28 ~ ~ ___________________________