Final Exam

EEE 352—Fall 2008

Solutions

1. An n-channel MOSFET has an oxide thickness of 1.0 nm, oxide dielectric constant
of 3.9, W = 4 µm, µe =350 cm2/Vs, Lg = 25 nm, and an effective threshold voltage
of 0.2 V. Calculate the saturation current. Assume VGS = 1.0 V.
The current in the MOSFET in the saturation condition are
ZCox µ
IDS = (VGS − VT ) 2
2L
(3.9 ⋅ 8.854 ×10−12 /10−9 )0.035
=4 (1.0 − 0.2) 2
2 ⋅ 0.025
= 62mA

2. Consider a potential tunneling barrier, whose height is 0.3 eV and thickness is 1.0
nm. If the incident wave energy is 0.08 eV, and the effective mass 0.02m0, what is
€ the transmission coefficient?

The tunneling coefficient is given by

Now,
2m(V − E) 2 ⋅ 0.02 ⋅ 9.1×10−31 ⋅ 0.22 ⋅1.6 ×10−19
γ= = = 3.39 ×10 8 /m
2 (1.0546 ×10−34 ) 2
γ 0.22
= = 1.66
k 0.08
k
= 0.6
γ
This gives

1
€ T= = 0.87
1 2
1+ (1.66 + 0.6) sinh 2 (0.339 ⋅1.0)
4

3. A semiconductor sample has a width of 5 cm, a thickness of 1 mm, and a length of

€ 20 cm. A magnetic field of 1 Tesla is applied normal to the width and length
surface. When a voltage of 11.6 mV is applied to the length, a current of 3.6 mA is
passed along the length. A transverse voltage (across the width) of 22.5 mV is
found to be developed. What are the carrier density and the mobility?
 From the data given, we find that
3.6 ×10−3
Jx = = 72A /m 2 = 7.2mA /cm 2
0.05 ⋅ 0.001
0.0116
Ex = = 0.058V /m = 58mV /cm .
0.2
22.5 ×10−3
Ey = = 0.45V /m = 450mV /cm
0.05
Then, we can find that
Ey 0.45
€ R H = = = 6.25 ×10−3 m 3 /coul
BJx 1⋅ 72
.
E 0.058
ρ= x = = 8.12 ×10−4 ohm − m
Jx 72
Hence, we find that
1 1
€ n = = −19 −3
= 1×1015 cm−3
eRH 1.6 ×10 ⋅ 6.25 ×10
R H 6.25 ×10−3
µ= = −4
= 7.7m 2 /Vs = 77,000cm 2 /Vs
ρ 8.12 ×10

4. Consider an n-channel silicon JFET with the following parameters: Na = 2 × 1018

€ cm-3, N = 1 × 1016 cm-3, and a = 0.75 µm. (a) Calculate the internal pinchoff
d
voltage. (b) Determine the gate voltage required such that the undepleted
channel is 0.1 µm.

(a) The pinchoff voltage is given by (13.3) to be

ea 2 N d 1.6 ×10−19 (7.5 ×10−7 ) 2 ⋅10 22
Vp 0 = = = 4.34V .
2εs 2 ⋅11.7 ⋅ 8.854 ×10−12
(b) Now, for the second part, we require h to be
h = a − 0.1µm = 0.65µm .
This now requires
€
eh 2 N d  0.65  2
Vbi − VGS = = 4.34  = 3.26V .
€ 2ε s  0.75 
The built-in potential is given by (8.1) as
kB T  N a N d   2 ×1018 ⋅1×1016 
Vbi = ln  = 0.0259ln  = 0.832V .
€ e  n i2  10 2
 (1.5 ×10 ) 
Thus,
VGS = −3.26 + 0.83 = −2.43V .
€

€
5. Find the momentum, velocity and de Broglie wavelength of an electron in a
semiconductor having kinetic energy of 0.15 eV, and a mass of 0.013 times the
free electron mass.

p = 2mE = 2 ⋅ 0.013⋅ 9.1×10−31 ⋅ 0.15 ⋅1.6 ×10−19

= 2.38 ×10−26 kg ⋅ m /s
p 2.38 ×10−26
v= = = 2.0 ×10 6 m /s
m 0.013⋅ 9.1×10−31
h 6.626 ×10−34
λ= = = 27.8nm
p 2.38 ×10−26

The following question is required on this exam for use in ABET accreditation
considerations of cross-course knowledge retention. You are required to answer the
question,
€ and it will be graded, but do not spend more than 10-15 minutes on this
problem.

6. (a) A constant bias is applied to a homogeneous slab of Si, which is doped with
1016 cm-3 donor atoms. When this bias potential is applied to the material, we
have the option to compute the potential distribution, and therefore the electric
field, within the slab by using Poisson’s equation or by solving Laplace’s
equation. How would these two approaches differ?
(b) A heterojunction is made with two materials, which have dielectric constants
ε1 and ε2. Write the equation that relates the normal components of the electric
field intensity vector at the two sides of the heterointerface.
(c) The capacitance of a pn junction is a function of the potential applied across
the junction. Explain why this is the case.
(d) FETs are made using semiconductors as the base material, and not with
metals. Why is this?
(e) An electron traveling under a constant electric field will exhibit constant
acceleration when in a vacuum. But, if this same electron is in a semiconductor,
it will have a constant velocity. Why is this?

(a) There will be no difference. The semiconductor is space-charge neutral, so

the RHS of Poisson’s equation vanishes, giving Laplace’s equation.

(b) Assuming that there is no local charge at the interface, E1ε1 = E 2ε2 .

(c) There is a depletion region in the p-n junction. Applied potential changes the
€
width (xn and xp) and therefore changes the capacitance.
(d) Metals have such a high carrier density, that the screening length is too small

to be useful.

(e) The semiconductor has scattering, which limits the velocity.