Ratio oWhich of the following currents is nearly equal to each other?

a. I B and I C

b. I E and I C

c. I B and I E

d. I B , I C , and I E

2. The ratio of which two currents is represented by β?

a. I C and I E

b. I C and I B

c. I E and I B

d. None of the above

3. At what region of operation is the base-emitter junction forward biased and the base-

collector junction reverse biased?

a. Saturation

b. Linear or active

c. Cutoff

d. None of the above

4. Calculate the approximate value of the maximum power rating for the transistor

represented by the output characteristics of Figure 4.1?

a. 250 mW

b. 170 mW

c. 50 mW

d. 0 mW

5. The cutoff region is defined by IB _____ 0 A. <

6. The saturation region is defined by VCE _____ V CEsat . <

7. For the BJT to operate in the active (linear) region, the base-emitter junction must be

_____-biased and the base-collector junction must be _____-biased.

a. forward, forward

b. forward, reverse

c. reverse, reverse
d. reverse, forward

8. For the BJT to operate in the saturation region, the base-emitter junction must be

_____-biased and the base-collector junction must be _____-biased.

a. forward, forward

b. forward, reverse

c. reverse, reverse

d. reverse, forward

9. Which of the following voltages must have a negative level (value) in any npn bias

circuit?

a. V BE

b. V CE

c. V BC

d. None of the above

10. For what value β does the transistor enter the saturation region?

a. 20

b. 50

c. 75

d. 116

11. Determine the reading on the meter when V CC = 20 V, R C = 5 Ω, and IC = 2 mA.

a. 10 V

b. –10 V

c. 0.7 V

d. 20 V

12. Which of the following is assumed in the approximate analysis of a voltage divider

circuit?

a. I B is essentially zero amperes.

b. R 1 and R 2 are considered to be series elements.

c. β RE greater ≥ 10R 2

d. All of the above

13. It is desirable to design a bias circuit that is independent of the transistor beta.

a. True

b. False

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 41

14. Calculate the voltage across the 91 kΩ resistor.

a. 18 V

b. 9.22 V

c. 3.23 V

d. None of the above

15. Calculate the value of V CEQ .

a. 8.78 V

b. 0 V

c. 7.86 V

d. 18 V

16. Calculate I Csat .

a. 35.29 mA

b. 5.45 mA

c. 1.86 mA

d. 4.72 mA

17. Calculate V CE .

a. 4.52 V
b. –4.52 V

c. 4.48 V

d. –4.48 V

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 42

18. Calculate V CE .

a. –4.52 V

b. 4.52 V

c. –9 V

d. 9 V

19. Which of the following is (are) related to an

emitter-follower configuration?

a. The input and output signals are in phase.

b. The voltage gain is slightly less than 1.

c. Output is drawn from the emitter terminal.

d. All of the above

20. Determine the values of V CB and I B for this circuit.

a. 1.4 V, 59.7 µA

b. –1.4 V, 59.7 µA

c. –9.3 V, 3.58 µA

d. 9.3 V, 3.58 µA

21. Calculate E Th for this network.

a. −12.12 V

b. 16.35 V

c. −3.65 V

d. 10 V
22. Calculate R sat if V CE = 0.3 V.

a. 49.2 Ω

b. 49.2 kΩ

c. 49.2 mΩ

d. 49.2 MΩ

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 43

23. You can select the values for the emitter and collector resistors from the information

that is provided for this circuit.

a. True

b. False

24. In the case of this circuit, you must assume that V E = 0. 1·V CC in order to calculate R C and

RE.

a. True

b. False

25. Which of the following is (are) the application(s) of a transistor?

a. Amplification of signal

b. Switching and control

c. Computer logic circuitry

d. All of the above

26. Calculate the storage time in a transistor switching network if t off is 56 ns, t f = 14 ns, and

t r = 20 ns.

a. 70 ns

b. 42 ns

c. 36 ns
d. 34 ns

27. The total time required for the transistor to switch from the &quot;off&quot; to the &quot;on&quot;
state is

designated as ton and defined as the delay time plus the time element.

a. True

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 44

b. False

28. For an &quot;on&quot; transistor, the voltage V BE should be in the neighborhood of 0.7 V.

a. True

b. False

29. For the typical transistor amplifier in the active region, V CE is usually about _____ % to

_____ % of V CC .

a. 10, 60

b. 25, 75

c. 40, 90

30. Which of the following is (are) a stability factor?

a. S(I CO )

b. S(V BE )

c. S(β)

d. All of the above

31. In a fixed-bias circuit, which one of the stability factors overrides the other factors?

a. S(I CO )

b. S(V BE )

c. S(β)

d. Undefined

32. In a voltage-divider circuit, which one of the stability factors has the least effect on the

device at very high temperature?

a. S(I CO )
b. S(V BE )

c. S(β)

d. Undefined

33. Use this table to determine the change in IC from 25ºC to 175ºC for R B / R E = 250 due to

the S(I CO ) stability factor. Assume an emitter-bias configuration.

a. 140.34 nA

b. 140.34 µA

c. 42.53 nA

d. 0.14034 nA

34. Determine the change in IC from 25ºC to 175ºC for the transistor defined in this table

for fixed-bias with RB = 240 kΩ and β= 100 due to the S(V BE ) stability factor.

a. 145.8 µA

b. 145.8 nA

c. –145.8 µA

d. –145.8 nA

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 45

35. Determine I CQ at a temperature of 175º C if I CQ = 2 mA at 25º C for R B / R E = 20 due to the

S(β) stability factor.

a. 2.417 mA

b. 2.392 mA

c. 2.25 mA

d. 2.58 mA

36. By definition, quiescent means _____.

a. quiet

b. still

c. inactive

d. All of the above

37. _____ should be considered in the analysis or design of any electronic amplifiers.
a. dc

b. ac

c. dc and ac

d. None of the above

38. For the dc analysis the network can be isolated from the indicated ac levels by replacing

the capacitor with _____.

a. an open circuit equivalent

b. a short circuit equivalent

c. a source voltage

d. None of the above

39. In a fixed-bias circuit with a fixed supply voltage V CC , the selection of a _____ resistor

sets the level of _____ current for the operating point.

a. collector, base

b. base, base

c. collector, collector

d. None of the above

40. Changes in temperature will affect the level of _____.

a. current gain β

b. leakage current I CEO

c. both current gain β and leakage current I CEO

d. None of the above

41. In a fixed-bias circuit, the magnitude of I C is controlled by and therefore is a function of

_____.

a. R B

b. R C

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 46

c. β

d. R B and β
42. For a transistor operating in the saturation region, the collector current I C is at its _____

and the collector-emitter voltage V CE is to the _____.

a. minimum, left of the V CEsat line

b. minimum, right of the V CEsat line

c. maximum, left of the V CEsat line

d. maximum, right of the V CEsat line

43. The dc load line is determined solely by the _____.

a. base-emitter loop

b. collector-emitter loop

c. base-collector loop

d. None of the above

44. A change in value of _____ will create a new load line parallel to its previous one in a

fixed-bias circuit.

a. R B

b. R C

c. V CC

d. V BE

45. In a fixed-bias circuit, the slope of the dc load line is controlled by _____.

a. R B

b. R C

c. V CC

d. I B

46. The emitter resistor in an emitter-stabilized bias circuit appears to be _____ in the base

circuit.

a. larger

b. smaller

c. the same

d. None of the above

47. _____is the primary difference between the exact and approximate techniques used in

the analysis of a voltage divider circuit.

a. Thevenin voltage E Th

b. Thevenin resistance R Th

c. Base voltage V B

d. R C

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 47

48. The Thevenin equivalent network is used in the analysis of the _____ circuit.

fixed bias

a. emitter-stabilized bias

b. voltage divider

c. voltage feedback

49. The saturation current of a transistor used in a fixed-bias circuit is _____ its value used

in an emitter-stabilized or voltage-divider bias circuit for the same values of R C .

a. more than

b. the same as

c. less than

d. None of the above

50. In a collector feedback bias circuit, the current through the collector resistor is _____

and the collector current is _____.

a. I C , I C

b. I B + I C , I C

c. I B , I C

d. None of the above

51. _____is the least stabilized circuit.

a. Fixed bias

b. Emitter-stabilized bias

c. Voltage divider
d. Voltage feedback

52. _____ is less dependent on the transistor beta.

a. Fixed bias

b. Emitter bias

c. Voltage divider

d. Voltage feedback

53. In a transistor-switching network, the level of the resistance between the collector and

emitter is _____ at the saturation and is _____at the cutoff.

a. low, low

b. low, high

c. high, high

d. high, low

54. In a transistor-switching network, the operating point switches from _____ to _____

regions along the load line.

a. cutoff, active

b. cutoff, saturation

c. active, saturation

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 48

d. None of the above

55. For the typical transistor amplifier in the active region, V CE is usually about _____ % to

_____ % of V CC .

a. 0, 100

b. 25, 75

c. 45, 55

d. None of the above

56. In any amplifier employing a transistor, the collector current I C is sensitive to _____.

a. Β

b. V BE
c. I CO

d. All of the above

57. As the temperature increases, β_____, V BE _____, and I CO _____ in value for every 10ºC.

a. increases, decreases, doubles

b. decreases, increases, remains the same

c. decreases, increases, doubles

d. increases, increases, triples

58. A significant increase in leakage current due to increase in temperature creates

_____between I B curves.

a. smaller spacing

b. larger spacing

c. the same space as at lower temperature

d. None of the above

59. The _____the stability factor, the _____sensitive the network is to variations in that

parameter.

a. higher, more

b. higher, less

c. lower, more

d. None of the above

60. In an emitter-bias configuration, the _____ the resistance R E , the _____ the stability

factor, and the _____ stable is the system.

a. smaller, lower, less

b. larger, more, more

c. smaller, more, more

d. larger, lower, more

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 49

Answers to Chapter 4 Questions

1. I E and I C

2. I C and I B

3. Linear or active

4. 170 mW

5. ≤

Electronic Devices and Circuits by Robert L. Boylestad |My Electronics Reviewer 50

6. ≤

7. forward, reverse

8. forward, forward

9. V BC

10. 116

11. 10 V

12. All of the above

13. True

14. 3.23 V

15. 7.86 V

16. 4.72 mA

17. 4.52 V

18. 4.52 V

19. All of the above

20. 1.4 V, 59.7 µA

21. −3.65 V

22. 49.2 Ω

23. False

24. True
25. All of the above

26. 42 ns

27. True

28. True

29. 25, 75

30. All of the above