Department of Electrical Engineering

Indian Institute of Technology, Kanpur

EE 616 Quiz 1 23.9.20

Full Marks: 15 Total Time: 30 mins.

Data: 0 = 8.854  1014 F/cm, r(SiO2) = 3.9

a) A 2T MOSCAP is fabricated on a p-type Si substrate, with oxide thickness of 50 nm. The work function
of the metal gate is same as that of the substrate. Oxide charge volume density ( in mC/cm3) is
distributed in the oxide, as shown in the figure by the red line, having exp(x2) dependence, where  is a
constant. Evaluate , and hence, determine the flatband voltage of the structure.
b) Now, if the oxide charges were distributed the other way, i.e., maximum at the metal-oxide interface and
minimum at the oxide-semiconductor interface, following exp(x2) dependence, state and justify, based
on purely physical reasoning and without doing any numerical calculation, how the flatband voltage
would change (if at all) from the value calculated in part a).
c) If the substrate were n-type, but now a different metal is chosen for the gate, which has the same work
function as that of the substrate, and the oxide charge volume density remains the same as that shown in
the figure, will the value of the flatband voltage calculated in part a) change? Justify with clear reasoning.

(x)
3
(mC/cm )

30
2
exp(x )
dependence
Metal Oxide Semiconductor

3
tox
0 50 x (nm)