EMD5 / UMD5N

Transistors

General purpose
(dual digital transistors)
EMD5 / UMD5N

zFeatures zExternal dimensions (Unit : mm)

1) Both the DTA143X chip and DTC144E chip in an
EMT6 or UMT6 package. EMD5

2) Mounting possible with EMT3 or UMT3 automatic

0.5 0.5
(4) (3)

0.22

1.0
1.6
(5) (2)
mounting machines. (6)
1.2
(1)

3) Transistor elements are independent, eliminating 1.6

0.13

0.5
interference.
4) Mounting cost and area can be cut in half. ROHM : EMT6 Each lead has same dimensions

Abbreviated symbol : D5

zStructure UMD5N

0.65
(3)
(4)
A PNP and NPN digital transistor

1.3

2.0
0.2

(2)
(each with a single built in resistor) (5)
(6)

0.65
(1)
1.25

2.1
The following characteristics apply to both the DTr1 and
DTr2, however, the “ −” sign on DTr2 values for the PNP
0.15

0.9
0.7

type have been omitted. 0.1Min.

0∼0.1

ROHM : UMT6 Each lead has same dimensions

EIAJ : SC-88

zEquivalent circuit Abbreviated symbol :D5

EMD5 / UMD5N

(3) (2) (1)

R1 R2

DTr1
DTr2
DTr1
R1/R2=47kΩ / 47kΩ R2 R1
DTr2 (4) (5) (6)
R1/R2=4.7kΩ / 10kΩ

zPackaging specifications
Package Taping

Type Code T2R TR

Basic ordering
unit (pieces) 8000 3000

EMD5
UMD5N

Rev.A 1/4
 EMD5 / UMD5N
Transistors

zAbsolute maximum ratings (Ta = 25°C)

Limits
Parameter Symbol Unit
DTr1(DTC144E) DTr2(DTC143X)
Supply voltage VCC 50 −50 V
Input voltage VIN −10 to +40 −20 to +7 V
IO 30 −100
Output current mA
IC(Max.) 100 −100
Power dissipation Pd 150(TOTAL) 120(1ELEMENT) mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

zElectrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
VI(off) − − 0.5 VCC=5V, IO=100µA
Input voltage V
VI(on) 3 − − VO=0.3V, IO=2mA
Output voltage VO(on) − 0.1 0.3 V IO/II=10mA/0.5mA
Input current II − − 0.18 mA VI=5V
Output current IO(off) − − 0.5 µA VCC=50V, VI=0V
DC current gain GI 68 − − − VO=5V, IO=5mA
Input resistance R1 32.9 47 61.1 kΩ −
Resistance ratio R2/R1 0.8 1 1.2 − −
Transition frequency fT − 250 − MHz VCE=10V, IE=−5mA, f=100MHz ∗
∗ Transition frequency of the device

Parameter Symbol Min. Typ. Max. Unit Conditions

VI(off) − − −0.3 VCC=−5V, IO=−100µA
Input voltage V
VI(on) −2.5 − − VO=−0.3V, IO=−20mA
Output voltage VO(on) − −0.1 −0.3 V IO/II=−10mA/−0.5mA
Input current II − − −1.8 mA VI=−5V
Output current IO(off) − − −0.5 µA VCC=−50V, VI=0V
DC current gain GI 30 − − − VO=−5V, IO=−10mA
Input resistance R1 3.29 4.7 6.11 kΩ −
Resistance ratio R2/R1 1.7 2.1 2.6 − −
Transition frequency fT − 250 − MHz VCE=−10V, IE=5mA, f=100MHz ∗
∗ Transition frequency of the device

Rev.A 2/4
 EMD5 / UMD5N
Transistors

zElectrical characteristic curves

DTr1 (NPN)
100 10m 1k
VO=0.3V VCC=5V VO=5V
5m 500
50
2m Ta=100°C Ta=100°C

OUTPUT CURRENT : Io (A)

INPUT VOLTAGE : VI(on) (V)

25°C

DC CURRENT GAIN : GI
20 1m 200 25°C
−40°C
500µ −40°C
10 Ta=−40°C 100
25°C 200µ
5 50
100°C
100µ
2 50µ 20

1 20µ 10

500m 10µ 5
5µ
200m 2
2µ
100m 1µ 1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A)

Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output
(ON characteristics) (OFF characteristics) current

1
lO/lI=20
500m
OUTPUT VOLTAGE : VO(on) (V)

Ta=100°C
200m
25°C
100m −40°C

50m

20m
10m

5m

2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output
current

Rev.A 3/4
 EMD5 / UMD5N
Transistors

DTr2 (PNP)
−100 −10m 1k
VO=−0.3V VCC=−5V VO=−5V
−5m
−50 500
−2m

OUTPUT CURRENT : IO (A)

−20 200
INPUT VOLTAGE : VI(on) (V)

DC CURRENT GAIN : GI
−1m
−10 −500µ 100
Ta=−40°C
Ta=100°C Ta=100°C
−5 25°C −200µ 50
100°C 25°C 25°C
−100µ
−2 −40°C 20 −40°C
−50µ
−1 −20µ 10
−500m −10µ 5
−5µ
−200m 2
−2µ
−100m −1µ 1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

OUTPUT CURRENT : IO (V) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (V)
Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output
(ON characteristics) (OFF characteristics) current

−1
IO/II=20
−500m
OUTPUT VOLTAGE : VO(on) (V)

−200m

−100m
−50m Ta=100°C
25°C
−20m −40°C
−10m
−5m

−2m

−1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

OUTPUT CURRENT : IO (V)

Fig.4 Output voltage vs. output
current

Rev.A 4/4
Appendix

Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan

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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1