Beruflich Dokumente
Kultur Dokumente
a r t i c l e i n f o a b s t r a c t
Article history: In this work a wide-bandwidth low-power voltage-controlled oscillator (VCO) design is presented using a
Received 9 September 2018 new differential delay cell with complementary current control mechanism and inversion mode MOSFET
Revised 3 February 2019 (IMOS) varactor. The variations in output oscillation frequency of the VCO has been achieved by changing
Accepted 26 February 2019
the capacitance of the delay cell with the usage of IMOS varactor containing two PMOS transistors con-
Available online 8 March 2019
nected in parallel. The proposed three-stage VCO has been designed with 1.8 V power supply in 180 nm
CMOS technology. Capacitance of IMOS varactor has been varied by altering the source/drain voltage
Keywords:
ðV control Þ and back-gate voltage ðV sb Þ of IMOS. The variations in power supply voltage from 1 V to 2.4 V
Complementary current control
Delay cell
provides output frequency from 1.893 GHz to 7.926 GHz with power dissipation of 0.953 mW to
IMOS 24.261 mW with IMOS varactor width of 5 mm. The results have been extended for the IMOS width of
Low power 10 mm, 15 mm and 20 mm. The tuning range of 122% has been achieved with the power supply tuning
Phase noise method. The variations in source/drain voltage of IMOS from 1 V to 2.4 V provides the output frequency
from 6.373 GHz to 5.460 GHz with power dissipation of 9.62 mW. The tuning range of 15.7%, 22.3%, 44%
and 40.6% has been obtained for IMOS with widths of 5 lm, 10 lm, 15 lm and 20 lm with the source/
drain voltage ðV control Þ variations. Further, frequency variation from 5.895 GHz to 6.406 GHz has been
obtained with back-gate voltage ðV sb Þ tuning of IMOS varactor from 0 V to 2.4 V. The phase noise mea-
sured for the VCO is 90.67 dBc/Hz@1 MHz and the figure of merit (FoM) for the VCO is 172.86 dBc/
Hz with supply voltage of 1.8 V. Proposed VCO circuit achieved a low power dissipation, wide tuning
range, better phase noise and figure of merit (FoM).
Ó 2019 Karabuk University. Publishing services by Elsevier B.V. This is an open access article under the CC
BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
https://doi.org/10.1016/j.jestch.2019.02.011
2215-0986/Ó 2019 Karabuk University. Publishing services by Elsevier B.V.
This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
1078 V. Jangra, M. Kumar / Engineering Science and Technology, an International Journal 22 (2019) 1077–1086
implemented with active devices to regulate the operating fre- discussion extracted through simulation of VCO circuit. Finally,
quency while the conventional VCOs control voltage does not cover Section 5 concludes the work.
the entire range of power supply voltage because of the positive
gate voltage needed for the active devices. Therefore, the control 2. System description
voltage will get reduced with the lowering of the power supply
voltage. The variations in positive gate voltage changes the charac- A ring oscillator comprises of delay stages and each stage offers
teristic of the control voltage that limits the useful range and the input to the following stage in the ring. For a conventional VCO, the
maximum frequency has been achieved. To overcome these con- frequency of oscillation is given by the number of delay stages and
straints a complementary current control structure is reported in propagation delay time of the delay cell as shown in Eq. (1).
the literature [9] and this method improves the highest operating
frequency along with the tuning range of VCO. Likewise, scaling 1
fo ¼ ð1Þ
also reduces the power supply voltage which limits the frequency 2Nsd
tuning. The dropping of power supply voltage lowers the effective where sd is the propagation delay time specified by each stage and
range of control voltage. Thus, low-loss varactors are required to N is the total number of delay stages. The number of delay stages or/
sustain wide frequency tuning in VCO. A varactor consists of vari- and the propagation delay time are inversely proportional to the
able resistance and capacitance. MOS based varactors are generally frequency of oscillation.
used for higher Q-factor which depends on higher levels of doping The proposed three-stage ring VCO with multi-pass loop topol-
in silicon as it reduces resistive losses and phase noise [10,11]. A ogy is schematically depicted in Fig. 1. The multi-pass loop topol-
MOS based varactor is like a MOS transistor with source (S), bulk ogy decreases the delay time of each stage by introducing a pair
(B) and drain (D) connected to form the first terminal and gate as of secondary inputs to individual stage and swapping these sec-
second terminal. The rate of change of MOS capacitance has been ondary inputs prior to the primary inputs. The VCO has two oper-
controlled by the voltage V bg applied between bulk (B) and gate ational loops. First one is the primary loop represented by solid
(G) terminal. MOSFET varactor works in 4 regions: depletion, accu- lines and the second one is the secondary loop represented by dot-
mulation, weak inversion and strong inversion. Generally, most ted lines. For individual delay cell, Pr+ and Pr represents the
varactors operate in accumulation and strong inversion regions. primary-loop inputs and Sr+ and Sr represents the secondary-
In case of accumulation and strong inversion regions, the capaci- loop inputs. As NMOS has lower switching time than PMOS,
tance per unit area is found to be maximum [12]. All the four secondary-loop inputs get the delay signals ahead of the
modes of operation depend upon the value of V bg and jV th j. The primary-loop inputs that decreases the PMOS switching time. A
voltage between the accumulation and depletion regions is known normal delay path is used to link the differential outputs of indi-
as flat-band voltage (V fb Þ. For MOS transistor based on two PMOS vidual delay stage with the primary-loop inputs of following stage
transistors connected in parallel, accumulation region arises with and a skewed delay path is used to link the secondary-loop inputs
mobile holes and the threshold voltage V th is exceeded by the bulk of the same subsequent stage. The inputs of secondary-loop are
voltage which is much higher than the gate voltage i.e. V bg < V fb . In associated with every single stage and swapping these inputs prior
case of MOS transistor working in depletion region, the bulk to gate to the primary-loop inputs tends to achieve smaller delay time
voltage V bg lies between the flat-band voltage V fb and threshold which further decreases the VCO phase noise. Also, the control
voltage jV th j i.e. V fb < V bg < jV th j where few mobile charge carriers voltage of VCO ensures linear control of the positive gate voltage
exist at the gate oxide interface. An inversion channel with mobile of the transistors of delay cells. The output frequency remains
holes grows up for V bg > jV th j i.e. the voltage across bulk and gate uncontrolled when the control voltage is less than or higher than
terminal V bg must be greater than the threshold voltage jV th j positive gate voltage. So, more reduction in supply voltage
[13–15]. The carrier concentration is more under the gate oxide decrease the valuable range of control voltage. To put away such
and the charge carriers moves freely for the MOS transistor to work dilemma of control voltage, a new delay stage has been proposed
in inversion region. For weak inversion region, V bg > jV th j and for as shown in Fig. 2. The delay stage has been designed using
strong inversion region V bg jV th j. The performance parameters multi-pass loop complementary current control scheme and IMOS
like power dissipation has been improved by the control of the varactor with two PMOS transistors connected in parallel. The
bulk terminal in MOS transistors and reverse body biasing reduces usage of IMOS varactor advances the delay with addition of con-
the standby leakage in CMOS circuits [16]. The Inversion-mode trolled variable capacitive load.
varactor (IMOS) has been utilized to minimize the power dissipa- The differential structure of this delay cell has offered another
tion. It also improves the phase noise at large offset frequencies current path by using complementary current control scheme to
from the carrier [17,18]. enhance the control voltage range. In the proposed delay cell, N1
A number of approaches to tune the VCO like multiple feedback and N2 forms the input pair of delay loop whereas P3 and P4 forms
loops, multi-pass loops, delay paths, output load variations, com- the input pair of skewed delay loop. The transistor N1 is in turn off
plementary current control and varactor tuning have been condition when the gate voltage of N1 i.e. Pr+ is lesser than the
reported in the literature [19–27]. For the proposed work, multi- threshold voltage. In the meantime, the input voltage at Sr+
pass loop complementary current control scheme and IMOS varac- reaches prior to the Pr+, the secondary input transistor P3 before
tor with two PMOS transistors connected in parallel has been used now directing its source current to the load at the output OUT+.
to design the delay stage. A three-stage VCO is reported in this Accordingly, the output node rise time has been increased. The
paper using the proposed delay stages. Variations in the source/ load transistors P1 and P2 in the delay cell acts as a latch. The pass
drain voltage ðV control Þ and the back-gate voltage ðV sb Þ of IMOS var- transistors N3 and N4 are direct coupled to regulate the highest
actor allows to achieve fine frequency tuning. The proposed VCO voltages at the gate of the load transistors for tuning the power
offers full range voltage controllability, wide tuning frequency of the latch. This adjustment of the latch power regulates the oper-
and low phase noise with good FoM. Remaining paper is organized ating frequency. Transistors P7 and P8 connected in parallel acts as
as follows: Section 2 reports a new delay cell based on multi-pass an IMOS varactor to increase the power of the latch. Two comple-
loop complementary current control with IMOS varactor. A 3-stage mentary control transistors P5 and P6 are used in pair to deliver an
VCO design is also reported in this section. Section 3 provides the additional current to eliminate the low control voltage operation
circuit analysis of delay cell. Section 4 present results and and to enhance the operating frequency. If the control voltage is
V. Jangra, M. Kumar / Engineering Science and Technology, an International Journal 22 (2019) 1077–1086 1079
Table 1
Transistor size for VCO.
Gate
-gmSr+
S r+
Cox Cgd C R
Cgs Rsub
Rsub -gmPr+
P r+ VOUT-
Cdep Cbd
Csb
Rdep -gmCr
Vct
Vsb C variable
Rdep
Cbd -gmCr
Csb Cdep Rsub
-gmPr-
P r- VOUT+
Rsub
Cgs Cox Cgd
C R
-gmSr-
S r-
Gate
By putting ej/ ¼ cos / þ j sin / and ejp ¼ 1, the transfer func- outputs at the equal voltage level. Also, the coupled NMOS pair
tion is given by decreases the slew rate of the output terminals for transitions of
states from high-to-low and vice-a-versa to attain improved phase
Rg mPrþ
HðjxÞ ¼ ð14Þ noise performance.
1 Rg mCr þ Rg mSrþ cos/ þ jðxRC þ Rg mSrþ sin/Þ
And the phase of HðjxÞ is given by
4. Results and discussions
xRC þ Rg mSrþ sin/
\HðjxÞ ¼ tan 1
ð15Þ
1 Rg mCr þ Rg mSrþ cos/ The proposed three-stage multi-pass loop complementary
current control VCO has been designed in TSMC 180 nm CMOS
The phase is equal to h i.e. given by (6). Hence, the equation technology and the results have been obtained with SPICE
becomes simulations in Mentor Graphics EDA tool. The results have been
xRC þ Rg mSrþ sin/ extracted with different power supply voltage ðV dd Þ, source/drain
tanh ¼ ð16Þ voltage ðV control Þ and back-gate voltage ðV sb Þ of IMOS transistors
1 Rg mCr þ Rg mSrþ cos/
at temperature of 27 °C. Various analysis like transient analysis,
According to Barkhausen criterion, the gain of the loop must DC analysis and noise analysis have been executed to get output
have not less than unity and the phase shift is a multiple of 2p. oscillation frequency, power dissipation and phase noise along
So, to fulfil this requirement with figure of merit (FoM) of the VCO with variations in IMOS
widths such as 5 lm, 10 lm, 15 lm and 20 lm. Table 2 shows
Rg mPrþ
jHðjxÞj ¼ qffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
2 2 1 the three-stage VCO outcomes with varying IMOS source/drain
1 Rg mCr þ Rg mSrþ cos/ þ xRC þ Rg mSrþ sin/ voltage ðV control Þ from 1 V to 2.4 V. As source/drain voltage
ð17Þ ðV control Þ increases, the capacitance of IMOS increases and therefore,
output oscillation frequency of the VCO declines. The results have
qffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
2 2 been extended with varying IMOS widths ðW I Þ.
Rg mPrþ 1 Rg mCr þ Rg mSrþ cos/ þ xRC þ Rg mSrþ sin/ As the IMOS width ðW I Þ increases, the capacitance of IMOS
ð18Þ increases and therefore output frequency decreases as compared
to the smaller width as presented in Table 2. The proposed differ-
Now simplify (17) by putting (16) and get equation between
ential ring VCO shows the total power dissipation of 9.62 mW.
tanh and cosh. We get
Fig. 5 shows the variations in output frequency for source/drain
1 Rg mCr þ Rg mSrþ cos/ voltage ðV control Þ with different IMOS widths ðW I Þ. The variations
Rg mPrþ
ð19Þ
cos h
This equation depicts that the minimum gain should match 6.5
with the oscillation principle. The oscillation frequency is given
by (10) and we get 6
Table 2
Source/drain Voltage ðV control Þ tuning of three-stage VCO with different IMOS widths at V dd = 1.8 V and V sb = 1.8 V.
Table 3
Power supply voltage ðV dd Þ tuning of three-stage VCO with different IMOS widths at V control = 1.5 V and V sb = 1.8 V.
Vdd (V) Frequency (GHz) Power Dissipation(mW) Phase Noise@1 MHz (dBc/Hz)
WI = 5 mm WI = 10 mm WI = 15 mm WI = 20 mm
1.0 1.893 1.422 1.153 0.982 0.95 87.23
1.2 3.005 2.280 1.901 1.437 2.13 86.07
1.4 4.100 3.167 2.633 2.239 3.88 87.61
1.6 5.059 3.986 3.314 2.840 6.34 89.12
1.8 5.943 4.728 3.984 3.407 9.62 90.93
2.0 6.647 5.402 4.528 3.967 13.71 92.67
2.2 7.312 6.011 5.106 4.439 18.59 96.64
2.4 7.926 6.642 5.526 4.963 24.26 97.48
in output oscillation frequency along with power dissipation of ations in output frequency for power supply voltage ðV dd Þ tuning
VCO for the power supply voltage ðV dd Þ tuning from 1 V to 2.4 V with different IMOS widths.
with different IMOS varactor widths ðW I Þ is shown in Table 3. Fur- The proposed VCO depicts the variations in power dissipation
ther, the phase noise variations through all the tuning range has against variations in power supply voltage in Fig. 7. The phase noise
been shown in Table 3. As the power supply voltage ðV dd Þ variations through all the tuning range has been shown in Fig. 8.
increases, the delay cell biasing current increases that increases Power dissipation varies from 0.95 to 24.26 mW for variations
the output oscillation frequency. This VCO shows the variations in supply voltage from 1 V to 2.4 V as shown in Table 3. Graph
in power dissipation from 0.95 mW to 24.26 mW for power supply between power dissipation and tuning frequency has been shown
ðV dd Þ tuning with different IMOS widths ðW I Þ. Fig. 6 shows the vari- in Fig. 9. Table 4 shows the variations in output oscillation fre-
8 -86
7
-88
6
Output Frequency (GHz)
-90
5
4 -92
W =5
I
W I =10
3
W =15
I -94
W =20
I
2
-96
1
0 -98
1 1.2 1.4 1.6 1.8 2 2.2 2.4 1 2 3 4 5 6 7 8
Tuning Voltage (V) Tuning Frequency (GHz)
Fig. 6. Output frequency variations for power supply voltage with different IMOS Fig. 8. Phase noise variations with power supply voltage for all tuning range.
widths ðW I Þ.
25
25
20
20
Power Dissipation (mW)
Power Consumption (mW)
15
15
10
10
5
5
0 0
1 1.2 1.4 1.6 1.8 2 2.2 2.4 1 2 3 4 5 6 7 8
Tuning Voltage (V) Tuning Frequency (GHz)
Fig. 7. Power dissipation variation with power supply voltage. Fig. 9. Power dissipation versus tuning frequency.
V. Jangra, M. Kumar / Engineering Science and Technology, an International Journal 22 (2019) 1077–1086 1083
Table 4
Back-gate voltage ðV sb Þ tuning of three-stage VCO with different IMOS widths at V dd = 1.8 V, V control = 1 V.
Fig. 11. Waveforms of VCO for (a) Source/drain voltage tuning at V dd = 1.8 V, V sb = 1.8 V, (b) Power Supply voltage tuning at V dd = 1.8 V, V control = 1.5 V and V sb = 1.8 V and (c)
V dd = 1.8 V, V control = 1.0 V, and V sb = 1.8 V.
Table 5
Phase noise performance of VCO for 1 MHz offset from the carrier.
Power Supply Voltage (Vdd) Control Voltage (Vcontrol) of IMOS Back-gate Voltage (Vsb) of IMOS Width of IMOS (WI) (mm) Phase noise of VCO@1 MHz (dBc/Hz)
1.8 V 1.5 V 1.8 V 5 90.93
1.0 V 2.0 V 1.5 V 5 90.45
1.8 V 1.8 V 1.0 V 5 90.15
1.8 V 1.0 V 1.8 V 5 90.67
1.8 V 1.5 V 1.0 V 5 90.21
1.0 V 1.5 V 1.8 V 5 90.55
V. Jangra, M. Kumar / Engineering Science and Technology, an International Journal 22 (2019) 1077–1086 1085
Fig. 12. Phase noise of the proposed VCO at (a) V dd = 1.8 V, V ct = 1.0 V & V sb = 1.8 V and (b) V dd = 1.8 V, V ct = 1.5 V & V sb = 1.8 V.
Table 6
Performance comparison with other VCOs.
References Frequency Range (GHz) Technology (mm) Phase Noise (dBc/Hz) Power Dissipation (mW) FoM (dBc/Hz)
[4] 0.02–0.80 0.18 108@1 MHz 22 150.6
[5] 0.89–2.4 0.18 97@1 MHz 14 –
[7] 7.3–7.86 0.18 103.@1 MHz 91.5 161.4
[8] 10.6–8.4 0.12 85.1@1 MHz 52.5 147.8
[15] 1.3–0.5 0.18 90@1 MHz 0.71 151.4
[17] 4.09–0.47 0.18 93.3@1 MHz 13 154.4
[20] 3.2–10 0.12 90@1 MHz 15 154.0
[21] 5.4 0.18 86.7@1 MHz 8.1 149.7
[23] 5.17–7.39 0.13 111.7@1 MHz 0.49 192.4
[24] 1.2–2.2 0.18 110@1 MHz – –
[25] 20.3–31.3 0.13 95.7@1 MHz 22 186.0
[26] 23.5 0.13 110.8@1 MHz 55 180.8
[27] 1.37–1.97 0.18 89.77@1 MHz 1.2 154.5
Proposed Work 1.893–7.926 0.18 90.67@1 MHz 0.95–24.26 182.8
(Power supply tuning)
6.373–5.460 93.45@1 MHz 9.62 172.8
(IMOS source/drain tuning)
5.895–6.406 86.53@1 MHz 9.62 160.8
(IMOS back gate tuning)
1086 V. Jangra, M. Kumar / Engineering Science and Technology, an International Journal 22 (2019) 1077–1086
obtained results of the proposed VCO has been found better in [17] M.L. Sheu, Y.S. Tiao, L.J. Taso, A 1-V 4-GHz wide tuning range voltage-
controlled ring oscillator in 0.18 mm CMOS, Microelectronics J. 42 (6) (2011)
terms of wider tuning range, lower power dissipation, lower phase
897–902.
noise and good FoM. [18] T. Unterberger, S. Cyrusian, M. Ruegg, A 2.5 GHz phase-switching PLL using a
supply controlled 2-delay-stage 10 GHz ring oscillator for improved jitter/
mismatch, in: Proceedings in IEEE International Symposium on Circuits and
Systems, 2005, pp. 5453–5456.
References [19] N. Kumar, M. Kumar, Design of CMOS-based low-power high-frequency
differential ring VCO, Int. J. Electron. Lett. (2018) 1–11.
[20] C. Zhang, Z. Li, J. Fang, J. Zhao, Y. Guo, J. Chen, A novel highspeed CMOS fully-
[1] H. Thabet, S. Meillere, M. Masmoudi, J.L. Seguin, H. Barthelemy, K. Aguir, A low differential ring VCO, in: 12th IEEE International Conference on Solid-State and
power dissipation CMOS differential-ring VCO for a wireless sensor, Analog Integrated Circuit Technology (ICSICT), 2014, pp. 1–3.
Integrated Circuits Signal Process. 73 (3) (2012) 731–740. [21] P.K. Rout, D.P. Acharya, G. Panda, A Multi-objective optimization based fast
[2] J. Jin, Low power current-mode voltage-controlled oscillator for 2.4 GHz and robust design methodology for low power and low phase noise current
wireless applications, Comput. Elect. Eng. 40 (1) (2014) 92–99. starved VCO, IEEE Trans. Semiconductor Manuf. 27 (1) (2014) 43–50.
[3] J. Mira, T. Divel, S. Ramet, J.B. Begueret, Y.A.D.Y. Deval, Distributed MOS [22] S. Saad, M. Mhiri, A.B. Hammadi, K. Besbes, A 160-mW, ring digitally controlled
varactor biasing for VCO gain equalization in 0.13/spl mu/m CMOS technology, oscillator for UHF/VHF nano-satellites broadcasting tuners in 90 nm CMOS
in: Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. IEEE, 2004. process, in: IEEE 12th International Multi-Conference on Systems, Signals &
[4] S.Y. Lee, J.Y. Hsieh, Analysis and implementation of a 0.9-V voltage-controlled Devices (SSD15), 2015.
oscillator with low phase noise and low power dissipation, IEEE Trans. Circuits [23] A. Aitoumeri, A. Bouyahyaoui, M. Alami, 5.18–7.42 GHz LC-VCO in
Syst. 55 (7) (2008) 624–627. subthreshold regime with low power low phase noise and immunity to PVT
[5] Z. Shu, K.L. Lee, B.H. Leung, A 2.4-GHz ring-oscillator-based CMOS frequency variations in 130 nm CMOS technology, Analog Integrated Circuits Signal
synthesizer with a fractional divider dual-PLL architecture, IEEE J. Solid-State Process. 95 (2018) 67–82.
Circuits 39 (3) (2004) 452–462. [24] X. Sun, C. Kong, Y. Chen, J. Tao, Z. Tang, A Synthesizable constant tuning gain
[6] C.H. Park, B. Kim, A low-noise 900-MHz VCO in 0.6-mm CMOS, IEEE J. Solid- technique for wideband LC-VCO design, IEEE Trans. Computer-Aided Des.
State Circuits 34 (5) (1999) 586–591. Integrated Circuits Syst. (2018).
[7] H.Q. Liu, W.L. Goh, L. Siek, W.M. Lim, Yue-Ping Zhang, A low-noise multi-GHz [25] F. Ullah, Y. Liu, X. Wang, M.M. Sarfraz, H. Zhang, Bandwidth-enhanced
CMOS multiloop ring oscillator with coarse and fine frequency tuning, IEEE differential VCO and varactor-coupled quadrature VCO for mm wave
Trans. Very Large Scale Integration (VLSI) Syst. 17 (4) (2009) 571–577. applications, AEU-Int. J. Electron. Commun. 95 (2018) 59–68.
[8] R. Tao, M. Berroth, Low power 10 GHz ring VCO using source capacitively [26] A. Thakkar, S. Theertham, P. Mirajkar, S. Aniruddhan, Techniques for improved
coupled current amplifier in 0.12 mm CMOS technology, Electron. Lett. 40 (23) continuous and discrete tuning range in millimeter-wave VCOs, IEEE Trans.
(2004) 1484–1486. Very Large Scale Integration (VLSI) Syst. (2018).
[9] Y.S. Tiao, M.L. Sheu, Full range voltage-controlled ring oscillator in 0.18 mm [27] M. Kumar, D. Dwivedi, A low power CMOS-based VCO design with I-MOS
CMOS for low-voltage operation, Electron. Lett. 46 (1) (2010) 30–32. varactor tuning control, J. Circuits, Syst. Comput. 27 (2018) 1850160.
[10] F. Svelto, P. Erratico, S. Manzini, R. Castello, A metal-oxide-semiconductor [28] Y. Tsividis, Mixed Analog-Digital VLSI Devices and Technology, McGraw Hill,
varactor, IEEE Electron. Device Lett. 20 (4) (1999) 164–166. Singapore, 1996.
[11] M. Kumar, Design of Linear Low-Power Voltage-Controlled Oscillator with I- [29] P. Kinget, Integrated GHz voltage controlled oscillators, Analog Circuit Des.
MOS Varactor and Back-Gate Tuning, Circuits, Systems, and Signal Processing, (1999) 353–381.
Springer, 2018, pp. 1–7.
[12] J. Maget, M. Tiebout, R. Kraus, Influence of novel MOS varactors on the
performance of a fully integrated UMTS VCO in standard 0.25-mm CMOS Vivek Jangra is a student of Ph.D (Electronics and communication Engineering) in
technology, IEEE J. Solid-State Circuits 37 (7) (2002) 953–958. USICT, GGSIP University, Dwarka, New Delhi, India. He is doing his research work in
[13] P. Andreani, S. Mattisson, On the use of MOS varactors in RF VCOs, IEEE J. Solid- the field of low power CMOS circuit design. He is a Life Member of IETE (India) and
State Circuits 35 (6) (2000) 905–910. ISTE (India).
[14] J. Jalil, M.B. Reza, M.A.M. Ali, T.G. Chang, A low power 3-stage voltage-
controlled ring oscillator in 0.18 mm CMOS process for Active RFlD Manoj Kumar is working as an Associate Professor in USICT (ECE), GGSIPU, Dwarka,
transponder, Elektronika ir Elektrotechnika 19 (8) (2013). New Delhi. He has more than 14 years of experience in teaching and research. He
[15] T. Yoshida, N. Ishida, M. Sasaki, A. Iwata, Low-voltage, low-phase-noise ring has published 30 research papers in International/National journals. He has also
voltage-controlled oscillator using 1/f-noise reduction techniques, Japanese J. published more than 35 research papers in International/National conference. His
Appl. Phys. 46 (4S) (2007) 2257. research interests include integrated circuit design, low power CMOS system and
[16] W.T. Lee, J. Shim, J. Jeong, Design of a three-stage ring-type voltage-controlled
microelectronics for communication systems. He is a Life Member of IETE (India),
oscillator with a wide tuning range by controlling the current level in an
ISTE (India), CSI (India) and Semiconductor Society of India.
embedded delay cell, Microelectron. J. 44 (12) (2013) 1328–1335.